WO2021093439A1 - 显示基板及其制作方法、电子装置 - Google Patents
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
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Definitions
- the embodiments of the present disclosure relate to a display substrate, a manufacturing method thereof, and an electronic device.
- OLED display panels have the characteristics of self-luminescence, high contrast, low energy consumption, wide viewing angle, fast response speed, can be used for flexible panels, wide operating temperature range, and simple manufacturing. Prospects.
- components with other functions such as imaging elements with photosensitive functions, are usually integrated to realize functions such as camera and fingerprint recognition.
- At least some embodiments of the present disclosure provide a display substrate including a display area including a first display area and a second display area, and the pixel density of the first display area is higher than that of the second display area.
- the display area includes a base substrate, and a first electrode layer, a light-emitting function layer, and a second electrode layer are sequentially arranged on the base substrate.
- the second electrode layer is located on a side of the light-emitting function layer away from the base substrate, and the first electrode layer and the second electrode layer are configured to apply a voltage to the light-emitting function layer to cause the light-emitting function layer to emit light.
- the functional layer emits light
- the second electrode layer includes a first electrode portion located in the first display area and a second electrode portion located in the second display area, the first electrode portion and the second electrode portion Electrically connected to each other, the light transmittance of the second electrode portion is higher than the light transmittance of the first electrode portion.
- the thickness of the first electrode portion is greater than the thickness of the second electrode portion.
- the first electrode portion includes a first sub-layer and a second sub-layer stacked on the light-emitting function layer in sequence, the first sub-layer is closer to the light-emitting function layer, and the first sub-layer is closer to the light-emitting function layer.
- the material of the first sublayer and the second sublayer are the same.
- the first sublayer and the second electrode part are an integral structure and the material is a metal or a metal alloy.
- the materials of the first sublayer and the second sublayer are different, and the work function of the material of the first sublayer is lower than the work function of the material of the second sublayer.
- the material of the first sub-layer includes metal or metal alloy
- the material of the second sub-layer includes a transparent conductive material
- the second sub-layer and the second electrode part are an integral structure.
- the first electrode part and the second electrode part are respectively an integral structure with an interface between each other, and the materials of the first electrode part and the second electrode part are different.
- the thickness of the first electrode portion and the second electrode portion are the same.
- the material of the first electrode part includes a metal or a metal alloy
- the material of the second electrode part includes a transparent conductive material
- the second electrode layer further includes a third electrode part located between the first electrode part and the second electrode part, and the third electrode part is connected to the first electrode part and the second electrode part respectively.
- the second electrode part is electrically connected, and the thickness of the third electrode part is not uniform.
- the thickness of the third electrode portion gradually decreases.
- the thickness of the third electrode portion first decreases and then increases.
- At least some embodiments of the present disclosure further provide an electronic device, including the above-mentioned display substrate and an imaging element, the imaging element being disposed in the second display area and located on a side of the second electrode layer close to the base substrate ,
- the imaging element includes a photosensitive surface, and the photosensitive surface faces the second electrode layer.
- At least some embodiments of the present disclosure further provide a method for manufacturing a display substrate, including: forming a display area on a base substrate, the display area including a first display area and a second display area, and the pixel density of the first display area Higher than the pixel density of the second display area.
- Forming the display area includes: sequentially forming a first electrode layer, a light-emitting function layer, and a second electrode layer on the base substrate, and the first electrode layer and the second electrode layer are configured to interfere with the light-emitting function.
- the second electrode layer includes a first electrode portion located in the first display area and a second electrode portion located in the second display area, the first electrode The portion and the second electrode portion are electrically connected to each other, and the light transmittance of the second electrode portion is higher than the light transmittance of the first electrode portion.
- the first electrode part includes a first sublayer and a second sublayer stacked on the light-emitting function layer in sequence, and the first sublayer is closer to the light-emitting function layer; forming the The second electrode layer includes: using a first mask to form the first sub-layer in the first display area and forming the second electrode portion in the second display area, and using a second mask to form the first sub-layer in the first display area.
- a display area forms the second sub-layer.
- the first electrode part includes a first sublayer and a second sublayer stacked on the light-emitting function layer in sequence, and the first sublayer is closer to the light-emitting function layer; forming the The second electrode layer includes: using a first mask to form the first sub-layer in the first display area, using a second mask to form the second sub-layer in the first display area, and forming the second sub-layer in the first display area.
- the second display area forms the second electrode part.
- FIG. 1 is a schematic plan view of a display substrate provided by an embodiment of the disclosure
- FIGS. 2A and 2B are schematic diagrams of the distribution of sub-pixels of a display substrate provided by an embodiment of the present disclosure
- FIG. 3 is a cross-sectional view of a display substrate provided by an embodiment of the disclosure.
- FIGS. 4A-4C are schematic diagrams of the second electrode layer of the display substrate provided by the embodiments of the disclosure.
- Figure 5 is a schematic diagram of the evaporation process
- FIG. 6A is a schematic diagram of an electronic device provided by an embodiment of the disclosure.
- 6B is a cross-sectional view of an electronic device provided by an embodiment of the disclosure.
- FIGS 7A-7C are schematic diagrams of the mask used in the manufacturing method of the display substrate provided by the embodiments of the disclosure.
- arranging the imaging element in the display area of the display device is beneficial to realize a narrow frame display.
- the display device since the display device is fabricated in the display area, it will affect the light transmittance of the imaging element.
- the light-emitting elements and opaque traces in the sub-pixels may block the light taken by the imaging element and affect the imaging quality.
- the light transmittance of the area where the imaging element is provided can be increased by reducing the density of the sub-pixels in the area.
- At least some embodiments of the present disclosure provide a display substrate including a display area including a first display area and a second display area.
- the pixel density of the first display area is higher than that of the second display area.
- the zone includes a base substrate and a first electrode layer, a light-emitting function layer and a second electrode layer sequentially arranged on the base substrate.
- the second electrode layer is located on a side of the light-emitting functional layer away from the base substrate, the first electrode layer and the second electrode layer are configured to apply a voltage to the light-emitting functional layer to make the light-emitting functional layer emit light, and the second The electrode layer includes a first electrode portion located in the first display area and a second electrode portion located in the second display area, the first electrode portion and the second electrode portion are electrically connected to each other, and the second electrode portion is light-transmissive The rate is higher than the light transmittance of the first electrode part.
- the light transmittance of the second display area is further improved.
- FIG. 1 is a schematic plan view of a display substrate provided by an embodiment of the disclosure.
- the display substrate 20 includes a plurality of gate lines 11 and a plurality of data lines 12.
- the plurality of gate lines 11 and the plurality of data lines 12 cross each other to define a plurality of sub-pixel regions arranged in an array in the display region 110.
- Each sub-pixel area is provided with a sub-pixel 100, and each sub-pixel includes a light-emitting element and a driving circuit for driving the light-emitting element to emit light.
- the driving circuit is, for example, a conventional pixel circuit.
- the driving circuit includes a conventional 2T1C (ie, two transistors and a capacitor) pixel circuit, 4T2C, 5T1C, 7T1C and other nTmC (n, m are positive integers) pixel circuits, and in different embodiments, the driving circuit also It may further include a compensation circuit, the compensation circuit including an internal compensation circuit or an external compensation circuit, and the compensation circuit may include a transistor, a capacitor, and the like.
- the driving circuit may further include a reset circuit, a light-emitting control circuit, a detection circuit, etc., as required.
- the display substrate may further include a data driving circuit 6 and a gate driving circuit 7 located in the non-display area 111 outside the display area 110.
- the data driving circuit and the gate driving circuit are connected to each other through the data line 12 and the gate line 11, respectively.
- the driving circuit of the light-emitting element is connected to provide an electric signal.
- the data driving circuit is used to provide data signals
- the gate driving circuit is used to provide scanning signals, and can be further used to provide various control signals, power signals, and the like.
- the display substrate adopts a silicon substrate as the base substrate, and both the gate driving circuit 6 and the data driving circuit 7 can be integrated on the silicon substrate.
- the gate drive circuit 6 and the data drive circuit 7 can also be formed in the area corresponding to the display area of the display substrate, for example, instead of Must be in the non-display area.
- the display area 110 includes a first display area 21 and a second display area 22.
- the pixel density (the number of sub-pixels per unit area) in the first display area 21 is higher than that of the pixels in the second display area 22.
- the density for example, the resolution of the first display area 21 is higher than that of the second display area 22.
- the pixel density in the present disclosure refers to the density of sub-pixels that actually exist, rather than the density of sub-pixels participating in display. Since the pixel density in the second display area 22 is relatively low, the light shielding of the wiring and devices in the sub-pixels is reduced, which is beneficial to increase the light transmittance of the second display area 22.
- the second display area 22 is located near the center of the display area 110, or may be located near the edges of the display area 110 (such as the upper left corner, the upper right corner, the center area of the upper edge, etc.).
- the shape of the second display area 22 may be a regular shape such as a rectangle, a circle, or an ellipse, or an irregular shape such as a drop shape.
- the size (side length or diameter) of the second display area 22 is 2-8 mm, for example, 4-6 mm.
- FIGS. 2A and 2B respectively show schematic diagrams of two sub-pixel distributions in an embodiment of the present disclosure.
- three adjacent sub-pixels in the same row constitute a pixel unit 200, and the three sub-pixels are respectively configured to emit light of three primary colors (R, G, B).
- R, G, B three primary colors
- the embodiment of the present disclosure does not limit the specific structure of the pixel unit.
- the distribution density of pixel units in the first display area 21 is higher than the distribution density of pixel units in the second display area 22.
- the structure of the pixel unit 200 in the second display area 22 is the same as the structure of the pixel unit 200 in the first display area 21.
- the pitch of adjacent sub-pixels 100 in the pixel unit 200 in the second display area 22 is the same as that of the first display area 21.
- This arrangement does not change the structure of the pixel unit 200 (minimum repeating unit) in the second display area 22, but only increases the spacing between the pixel units 200, so the design of the driving circuit is relatively simple.
- the structure of the pixel unit 200 in the second display area 22 is different from the structure of the pixel unit 200 in the first display area 21.
- the distance between adjacent sub-pixels 100 in the pixel unit 200 in the second display area 22 is greater than the distance between adjacent sub-pixels 100 in the pixel unit 200 in the first display area 21.
- Fig. 3 shows an example of a cross-sectional view of the display substrate shown in Fig. 1 along the A-A' direction.
- the display substrate is an organic light emitting diode (OLED) display substrate or a micro OLED (Micro OLED) display substrate.
- the light-emitting element may be an organic light-emitting diode (OLED) or a quantum dot light-emitting diode (QLED), etc.
- the embodiment of the present disclosure does not limit the type of the light-emitting element.
- the light-emitting layer of the OLED can be a small molecular organic material or a high molecular organic material.
- FIG. 3 schematically shows only one sub-pixel 100 in the first display area 21 and the second display area 22, and for each sub-pixel, only the light-emitting element 201 and the driving circuit are shown.
- the transistor 203 is directly connected to the light-emitting element 201.
- the transistor 203 may be a driving transistor configured to work in a saturated state and control the magnitude of the current for driving the light-emitting element 201 to emit light.
- the transistor 203 may also be a light-emitting control transistor, which is used to control whether the current for driving the light-emitting element 201 to emit light flows. The embodiment of the present disclosure does not limit this.
- the first electrode layer 204, the light-emitting function layer 205, and the second electrode layer 206 are sequentially stacked on the side of the driving circuit away from the base substrate 101, and the second electrode layer 206 is located on the light-emitting function layer 205 away from the substrate.
- the first electrode layer 204 and the second electrode layer 206 are configured to apply a voltage to the light-emitting function layer 205 to make the light-emitting function layer 205 emit light.
- the first electrode layer 204 includes a plurality of first electrodes 211 arranged at intervals and insulated from each other, and the plurality of first electrodes 211 are respectively located in a plurality of sub-pixels and used to form a light-emitting element 201 in the sub-pixel.
- the second electrode layer 206 includes second electrodes respectively located in a plurality of sub-pixels, and the plurality of second electrodes are electrically connected to each other.
- the light-emitting functional layer 205 includes light-emitting functional layer portions 213 respectively located in a plurality of sub-pixels.
- the first electrode 211, the light-emitting functional layer portion 213, and the second electrode of each sub-pixel 100 constitute the light-emitting element 201 in the sub-pixel.
- the light-emitting function layer portions 213 in adjacent sub-pixels 100 are spaced apart from each other by the pixel defining layer 220.
- the transistor 203 includes an active layer 121, a gate insulating layer 125, a gate 122, a first electrode 123, and a second electrode 124.
- the embodiments of the present disclosure do not limit the type, material, and structure of the transistor 203.
- it may be a top-gate type, a bottom-gate type, etc.
- the active layer of the transistor 203 may be microcrystalline silicon, amorphous silicon, or polysilicon (low temperature polysilicon).
- oxide semiconductor such as IGZO
- other inorganic semiconductor materials can also be organic materials, such as PBTTT, PDBT-co-TT, PDQT, PDVT-10, dinaphtho-dithiophene (DNTT) Or organic semiconductor materials such as pentacene.
- the transistor 203 may be N-type or P-type.
- the first electrode 123 of the transistor 203 is electrically connected to the first electrode 211 of the light-emitting element 201.
- the transistors used in the embodiments of the present disclosure may all be thin film transistors, field effect transistors, or other switching devices with the same characteristics.
- thin film transistors are used as examples for description.
- the source and drain of the transistor used here can be symmetrical in structure, so there can be no difference in structure between the source and drain.
- one pole can be directly described as the first pole and the other pole is the second pole.
- the first electrode layer 204 is configured as an anode layer, and the material of the first electrode layer 204 has a high work function.
- the material of the first electrode layer 204 also has a high reflectivity.
- the first electrode layer 204 may include magnesium (Mg), lithium (Li), calcium (Ca), strontium (Sr), cesium (Cs), silver (Ag), copper (Cu), aluminum (Al), Molybdenum (Mo), tungsten (W), titanium (Ti) and other metals and alloy materials combined with the above metals; or conductive metal oxide materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), etc.
- the first electrode layer 204 has a laminated structure, such as an ITO/Ag/ITO laminated structure or a Ti/Al/Ti/Mo laminated structure.
- the second electrode layer 206 is configured as a cathode layer, and the material of the second electrode layer 206 is a material having a low work function and a high transmittance.
- the material of the second electrode layer 206 may be a semi-transmissive metal or metal alloy material, a transparent conductive metal oxide material (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc oxide). Aluminum (AZO), etc.), transparent nano-electrode materials, etc.
- a high work function metal and a low work function metal can be used to form an alloyed second electrode layer 206.
- the material of the second electrode layer 206 is Ca/Al, Mg/Ag, Gd/Al, Al/Li, Sn/Li, Sn/Al, Ag/Al and other alloy materials.
- the material of the second electrode layer 206 is an alloy Mg/Ag formed by co-evaporating a low work function metal Mg and a high work function metal Ag with relatively stable chemical properties.
- the light-emitting function layer 205 may include at least one light-emitting layer, and may further include an electron/hole injection layer, an electron/hole transport layer, an electron/hole blocking layer, a charge generation layer, and the like as needed.
- the light-emitting functional layer 205 has a tandem structure, and includes multiple light-emitting layers connected in series by a charge generation layer (CGL).
- the second electrode layer 206 includes a first electrode portion 212 located in the first display area 21 and a second electrode portion 222 located in the second display area 22.
- the first electrode portion 212 and the second electrode portion 222 are connected to each other. Electric connection.
- the light transmittance of the second electrode part 222 is higher than that of the first electrode part 212.
- the light transmittance of the second electrode portion 222 can be higher than the light transmittance 212 of the first electrode portion by selecting the material or thickness of the first electrode portion 212 and the second electrode portion 222.
- the thickness of the first electrode portion 212 is greater than the thickness of the second electrode portion 222.
- the thickness of the second electrode part 222 is 60%-95% of the thickness of the first electrode part 212.
- the thickness of the second electrode portion 222 should not be too small, otherwise the resistance of the second electrode portion 222 will increase, thereby affecting the driving ability of the driving circuit in the second display area 22, resulting in the light-emitting brightness of the sub-pixels in the second display area 22 not enough.
- the thickness of the first electrode part 212 is 10 nm-20 nm
- the thickness of the second electrode part 222 is in the range of 6 nm-18 nm, for example, 6 nm-12 nm or 10 nm-15 nm.
- the first electrode part 212 and the second electrode part 222 are integrally formed, that is, an integral structure; at the same time, in the direction perpendicular to the base substrate 101, the thickness of the first electrode part 212 is greater than that of the first electrode part 212.
- the “integrated structure” in the present disclosure refers to a structure in which multiple structures are connected to each other formed in the same deposition process, and thus the multiple structures do not have an interface with each other and have the same material.
- the second electrode layer 206 of the integrated structure can be obtained by forming a conductive layer on the light-emitting function layer 205 and selectively etching the portion of the conductive layer located in the second display area 22.
- the thickness of the first electrode portion 212 may be the same as the thickness of the second electrode portion 222, and the transmittance of the material of the first electrode portion 212 is lower than the transmittance of the material of the second electrode portion 222.
- the second electrode layer 206 can be formed through multiple deposition processes (for example, evaporation process) without introducing a photolithography process.
- FIGS 4A-4C show several examples of the second electrode layer provided by the embodiment of the present disclosure.
- the first electrode part 212 includes a first sublayer 301 and a second sublayer 302 stacked on the light emitting function layer 205 in sequence, and the first sublayer 301 is closer to the light emitting function layer 205, for example, the first sublayer 301 is in direct contact with the light-emitting function layer 205.
- the first sub-layer 301 or the second sub-layer 302 of the first electrode part 212 and the second electrode part 222 are an integral structure.
- the materials of the first sublayer 301 and the second sublayer 302 are different, and the work function of the material of the first sublayer 301 is lower than the work function of the material of the second sublayer 302.
- the material of the first sub-layer 301 includes the above-mentioned metal or metal alloy material
- the material of the second sub-layer 302 includes the above-mentioned transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO). , Zinc Aluminum Oxide (AZO), etc.
- Arranging the first sub-layer 301 with a low work function closer to the light-emitting function layer 205 can improve the electron injection capability.
- arranging the high work function second sub-layer 302 on the outside of the first sub-layer 301 helps to protect the first sub-layer 301 and prevent water and oxygen. Invasion.
- the materials of the first sub-layer 301 and the second sub-layer 302 can also be the same, which can simplify the process.
- the second sub-layer 302 of the first electrode part 212 and the second electrode part 222 are an integral structure.
- the second sub-layer 302 of the first electrode portion 212 and the second electrode portion 222 are both transparent conductive materials, so that the second display area 22 has a higher light transmittance.
- the second sub-layer 302 is made of a transparent conductive material, its thickness can be appropriately thick to reduce resistance.
- the thickness of the second sub-layer is greater than that of the first sub-layer.
- the thickness of the first sub-layer 301 is 10 nm-20 nm, and the thickness of the second electrode portion 222 and the second sub-layer 302 is 50-100 nm.
- the second sub-layer 302 is overlapped on the first sub-layer 301, which can effectively reduce the resistance of the first electrode portion 212.
- the first sub-layer 301 of the first electrode part 212 and the second electrode part 222 are an integral structure.
- the materials of the first sub-layer 301 and the second sub-layer 302 are both metal or metal alloy materials, such as semi-transmissive metal or metal alloy materials. Since metal or metal alloy materials generally have a relatively low work function, using metal or metal alloy materials for both the first sublayer and the second sublayer can simultaneously improve the electron injection capability in the first display area and the second display area.
- the material of the second sub-layer 302 may be a metal or a metal alloy material, or a transparent conductive material.
- the thickness of the second electrode portion 222 cannot be too small, otherwise the resistance of the second electrode portion 222 will increase, thereby affecting the driving capability of the driving circuit in the second display area 22 and causing the sub-pixels in the second display area to emit light.
- the brightness is not enough.
- the thickness of the first sub-layer 301 is greater than that of the second sub-layer 302. thickness.
- the thickness of the first sublayer 301 and the second electrode portion 222 is in the range of 6nm-18nm, and the thickness of the second sublayer 302 is 6nm-12nm.
- the first electrode portion 212 and the second electrode portion 222 are formed separately and have different materials, and the transmittance of the material of the second electrode portion 222 is higher than that of the material of the first electrode portion 212. Transmittance.
- the first electrode part 212 and the second electrode part 222 are each an integral structure, and there is an interface between each other.
- the material of the first electrode part 212 is the aforementioned metal or metal alloy material
- the material of the second electrode part 222 is the aforementioned transparent conductive material.
- the thickness of the first electrode portion 212 and the second electrode portion 222 are the same, so that the overlapping area of the first electrode portion 212 and the second electrode portion 222 has a relatively flat surface, and the second electrode is reduced. Fracture risk of the layer.
- the second electrode layer 206 further includes a third electrode portion 232 located between the first electrode portion 212 and the second electrode portion 222, and the third electrode portion 232 is connected to the first electrode portion 212 and the second electrode portion 212, respectively.
- the two electrode parts 222 are electrically connected.
- the third electrode portion 232 here is used to distinguish the second electrode layer 206 from the relatively uniform body portions of the first display area 21 and the second display area 22 (that is, the first electrode portion 212 and the second electrode portion 222). ).
- the thickness of the third electrode part 232 is not uniform. This is due to the shadow effect during the evaporation process.
- the third electrode portion 232 includes a first portion 232a and a second portion 232b.
- the first portion 232a and the first electrode portion 212 are an integral structure, and the second portion 232b and the second electrode portion 222 As a one-piece structure. Due to the shadow effect, the thickness of the first portion 232a gradually decreases along the direction D1 from the first display area 21 to the second display area 22, and the thickness of the two portions 232b gradually increases along the direction D1 from the first display area 21 to the second display area 22. Big.
- the second portion 232b overlaps the first portion 232a, and the two have an interface. The interface is inclined with respect to the base substrate, that is, the included angle with the base substrate is an acute angle.
- the overlapping portion of the first portion 232a and the second portion 232b has a flat surface.
- the surface is parallel to the surface of the base substrate and is recessed with respect to the surface of the first electrode part 212 or the second electrode part 222. In other examples, the surface may also be flush with the first electrode portion 212 or the second electrode portion 222, and the third electrode portion 232 has a uniform thickness in this case.
- Figure 5 is a schematic diagram of the evaporation process. As shown in FIG.
- the evaporation material from the evaporation source 500 will diffuse at the edge of the opening area 320 of the mask 310, causing the actually formed film to extend beyond the opening area 320, forming a shadow outside the edge of the opening area 320 District SH.
- the edge of the film layer is not a right angle, but has a slope, that is, in the shadow area, the thickness of the film layer is not uniform, but gradual. In the direction away from the main region of the film layer, the thickness of the film layer in the shaded area gradually decreases. Due to the shadow effect, the opening area of the mask can be designed to be smaller than the actual film forming area, so that evaporation materials can be saved and costs can be reduced.
- the thickness of the third electrode portion 232 gradually decreases.
- the first sub-layer 301 of the first electrode portion 212 when the first sub-layer 301 of the first electrode portion 212 is formed by evaporation, the first sub-layer 301 forms a shadow area near the edge of the second display area 22.
- the second sub-layer 302 of the first electrode portion 212 when the second sub-layer 302 of the first electrode portion 212 is formed by evaporation, the second sub-layer 302 forms a shadow area near the edge of the second display area 22.
- the thickness of the third electrode portion 232 first decreases and then increases. This is because the first electrode portion 212 and the second electrode portion 222 are respectively formed by an evaporation process, and a shadow area is formed at the edge of the first electrode portion 212 near the second display area 22, that is, the third electrode portion 232 is formed.
- the first part 232a also forms a shadow area at the edge of the second electrode part 222 near the first display area 21, that is, forms the second part 232b of the third electrode part 232, and the two shadow areas are connected or overlapped with each other to form
- the third electrode part 232 in which there is an interface between the first electrode part 212 and the second electrode part 222.
- the formation process of the third electrode portion 232 will be specifically described in the following embodiment of the manufacturing method.
- An embodiment of the present disclosure further provides an electronic device, including the above-mentioned display substrate 20 and an imaging element, the imaging element is disposed in the second display area 22 of the display substrate 20 and located on the side of the second electrode layer close to the base substrate,
- the imaging element includes a photosensitive surface, and the photosensitive surface faces the second electrode layer of the display substrate 20.
- the imaging element 401 includes a photosensor configured to receive light that passes through the second electrode layer 206 and reaches the imaging element 401 and converts the light into an electrical signal for forming an image.
- FIG. 6A shows a schematic structural diagram of an electronic device 40 provided by some embodiments of the present disclosure
- FIG. 6B is a cross-sectional view of the electronic device shown in FIG. 6A along B-B'.
- the electronic device 40 further includes an encapsulation layer 207 and a cover plate 208 disposed on the display substrate 20, and the encapsulation 207 is configured to seal the light-emitting element in the display substrate 20 to prevent external moisture and oxygen from entering the light-emitting element. And the penetration of the drive circuit causes damage to the device.
- the encapsulation layer 207 includes an organic thin film or a structure in which an organic thin film and an inorganic thin film are alternately stacked.
- a water absorption layer (not shown) may be further provided between the encapsulation layer 207 and the display substrate 20, configured to absorb residual water vapor or sol in the preliminary manufacturing process of the light-emitting element.
- the cover plate 208 is, for example, a glass cover plate.
- the cover plate 208 and the packaging layer 207 may be an integral structure.
- the imaging element 401 may be attached to the back surface of the display substrate 20 (the surface opposite to the display surface). As shown in FIG. 6B, the imaging element 401 is attached to the side of the base substrate 101 away from the second electrode layer 206. In other examples, the imaging element 401 may also be formed inside the display substrate 20, for example, formed on the side of the base substrate 101 close to the second electrode layer 206. For example, the imaging element 401 may be formed together with the pixel circuit in the display substrate 20.
- the imaging element 401 is a camera. In other examples, the imaging element 401 may also be a fingerprint recognition element, configured to receive light reflected by the finger and passing through the second electrode layer when the finger approaches or touches the cover plate 208, and converts the light into electricity. Signal, used to form a fingerprint image of a finger.
- the electronic device can be, for example, a digital photo frame, a smart bracelet, a smart watch, a mobile phone, a tablet computer, a display, a notebook computer, a navigator, and other products or components with any display function.
- the embodiments of the present disclosure also provide a method for manufacturing the above-mentioned display substrate.
- the manufacturing method at least includes: sequentially forming a first electrode layer, a light-emitting function layer, and a second electrode layer on the base substrate.
- a first electrode portion in a display area and a second electrode portion in the second display area, the first electrode portion and the second electrode portion are electrically connected to each other, and the light transmittance of the second electrode portion is higher than that of the first electrode portion.
- the light transmittance of the electrode part is provided by sequentially forming a first electrode layer, a light-emitting function layer, and a second electrode layer on the base substrate.
- FIG. 7A-7C show several examples of masks used in the manufacturing method provided by the embodiments of the present disclosure.
- the manufacturing method of the display substrate provided by the embodiment of the present disclosure will be exemplarily described below with reference to Figs. 3, 4A-4C, and Figs. 7A-7C.
- the manufacturing method at least includes the following steps S701-S702.
- Step S701 forming a driving circuit of the light-emitting element 201 on the base substrate 101.
- forming the driving circuit includes forming a transistor 203, for example, including forming an active layer 121, a gate insulating layer 125, a gate 122, an interlayer insulating layer, and an interlayer insulating layer of the transistor 203 sequentially on the base substrate 101.
- the source and drain electrode layers including the first electrode 123 and the second electrode 124).
- the material of the active layer 121 may be a simple semiconductor material or a compound semiconductor material.
- it may include amorphous silicon, polysilicon (low temperature polysilicon or high temperature polysilicon), metal oxide semiconductor (such as IGZO, AZO), and the like.
- the material of the gate electrode 122 and the source and drain electrode layers includes gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W) and the above Alloy materials made of combinations of metals; or conductive metal oxide materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), etc.
- the gate insulating layer 125 and the interlayer insulating layer may be a single-layer structure of silicon nitride or silicon oxide or a multilayer structure formed by stacking silicon nitride and silicon oxide.
- the conductive material layer may be formed by a physical vapor deposition process such as sputtering, and the insulating material layer may be formed by a process such as chemical vapor deposition.
- Step S702 forming a light-emitting element 201 on the driving circuit.
- forming the light-emitting element 201 includes sequentially forming a first electrode layer 204, a light-emitting function layer 205, and a second electrode layer 206.
- a physical vapor deposition (for example, sputtering) process is used to form the first conductive layer, and a patterning process is performed on the first conductive layer to form a plurality of first electrodes 211 spaced apart from each other.
- the light-emitting function layer 205 and the second electrode layer 206 are sequentially formed by an evaporation process.
- forming the second electrode layer 206 includes: using the first mask 51 to form the first sublayer 301 of the first electrode portion 212 in the first display area 21, and using the second mask 52 in the first display The area 21 forms the second sub-layer 302 of the first electrode portion 212 and the second electrode portion 222 is formed in the second display area 22.
- the first mask and the second mask may both be open masks.
- the open mask has a lower cost than a fine metal mask (FFM), and can avoid the limitation of the precision of the fine metal mask on the structure of the display substrate.
- FAM fine metal mask
- FIG. 7A shows an example of the first mask 51 and the second mask 52.
- the opening area 510 of the first mask 51 corresponds to the first display area 21.
- the vapor deposition material will spread out of the area exposed by the opening area 510 at the edge of the opening area 510, so the opening area 510 may be smaller than the first display area 21.
- the opening area 520 of the second mask 52 corresponds to the first display area 21 and the second display area 22.
- the first mask 51 is used to form the first sub-layer 301 of the first electrode portion 212 in the first display area 21, and then the second mask 52 is used to form the second sub-layer in the first display area 21. 302 and the second electrode portion 222 located in the second display area 22, thereby forming the second electrode layer 206 as shown in FIG. 4A.
- a metal or a metal alloy is used as an evaporation source to form the first sub-layer 301 on the light-emitting functional layer 205
- a transparent conductive material is used as an evaporation source to form the second sub-layer 302 and the second electrode portion 222.
- metal or metal alloy is used as the evaporation source to form the first sub-layer 301 and the second electrode portion 222 on the light-emitting functional layer 206, and the metal or metal alloy is still used as the evaporation source to form the second sub-layer 302, or transparent conductive
- the material serves as an evaporation source to form the second sub-layer 302.
- the shape of the second display area 22 is a regular shape, such as a rectangle, a circle, and the like.
- the opening area 510 of the first mask 51 is rectangular.
- the second display area 22 may also have an irregular shape. As shown in FIG. 6A, the shape of the second display area 22 is a circle (that is, a part of a circle).
- FIG. 7B shows the formation of the first mask 51 and the second mask 52 corresponding to the display substrate.
- forming the second electrode layer 206 includes: using a first mask to form the first electrode portion 212 in the first display area 21, and using a second mask to form the second electrode portion in the second display area 22 222.
- FIG. 7C shows the first mask 51 and the second mask 52 in this example.
- the opening area 510 of the first mask plate 51 corresponds to the first display area 21, and the opening area 520 of the second mask plate 52 corresponds to the second display area 22. Due to the shadow effect, the opening area 510 may be smaller than the first display area 21, and the opening area 520 may be smaller than the second display area 22.
- the opening area 510 of the first mask 51 and the first electrode portion 212 overlap in a direction perpendicular to the base substrate, and the opening area 520 of the second mask 52 and the second electrode portion 222 are perpendicular to each other. Overlap in the direction of the base substrate.
- the third electrode part 232 corresponds to the shaded area SH.
- the diaphragm 52 forms the second electrode portion 222 in the second display area 22, and then uses the first mask 51 to form the first electrode portion 212 in the first display area 21.
- a shadow area SH is formed at the edge of the first electrode portion 212 near the second display area 22, and the second electrode portion 222 is formed at the same time when the second electrode portion 222 is near the first display area.
- the edge of the area 21 forms a shadow area SH, and the two shadow areas overlap so that the first electrode part 212 and the second electrode part 222 are electrically connected, and a third electrode part 232 is formed.
- metal or metal alloy is used as the evaporation source to form the first electrode portion 212 on the light-emitting functional layer 206, and a transparent conductive material is used to form the second electrode portion 222 on the light-emitting functional layer 206; that is, the third electrode portion 232 includes the Metal material and the transparent conductive material.
- an encapsulation layer may be formed on the second electrode layer 206, a polarizing layer may be provided, and a cover plate may be attached.
- the imaging element 401 is attached to the second display area 22 on the back of the display substrate (the surface opposite to the display surface), thereby forming an electronic device as shown in FIGS. 6A-6B.
- the imaging element 401 may also be formed in the process of forming the driving circuit, which is not limited in the embodiment of the present disclosure.
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Abstract
Description
Claims (17)
- 一种显示基板,包括显示区,所述显示区包括第一显示区和第二显示区,所述第一显示区的像素密度高于所述第二显示区的像素密度,所述显示区包括衬底基板以及依次设置于所述衬底基板上的第一电极层、发光功能层和第二电极层,所述第二电极层位于所述发光功能层远离所述衬底基板的一侧,所述第一电极层和所述第二电极层配置为对所述发光功能层施加电压以使所述发光功能层发光,其中,所述第二电极层包括位于所述第一显示区的第一电极部分和位于所述第二显示区的第二电极部分,所述第一电极部分与所述第二电极部分彼此电连接,所述第二电极部分的透光率高于所述第一电极部分的透光率。
- 如权利要求1所述的显示基板,其中,在垂直于所述衬底基板的方向上,所述第一电极部分的厚度大于所述第二电极部分的厚度。
- 如权利要求2所述的显示基板,其中,所述第一电极部分包括依次层叠设置于所述发光功能层上的第一子层和第二子层,所述第一子层更靠近所述发光功能层,所述第一子层或所述第二子层与所述第二电极部分为一体的结构。
- 如权利要求3所述的显示基板,其中,所述第一子层与所述第二子层的材料相同。
- 如权利要求3或4所述的显示基板,其中,所述第一子层与所述第二电极部分为一体的结构且材料为金属或金属合金。
- 如权利要求3所述的显示基板,其中,所述第一子层与所述第二子层的材料不同,且所述第一子层的材料的功函数低于所述第二子层的材料的功函数。
- 如权利要求6所述的显示基板,其中,所述第一子层的材料包括金属或金属合金,所述第二子层的材料包括透明导电材料,所述第二子层和所述第二电极部分为一体的结构。
- 如权利要求1-7任一所述的显示基板,其中,所述第一电极部分和所述第二电极部分分别为一体的结构且彼此之间存在界面,所述第一电极部分和所述第二电极部分的材料不同。
- 如权利要求8所述的显示基板,其中,所述第一电极部分与所述第二电极部分的厚度相同。
- 如权利要求8或9所述的显示基板,其中,所述第一电极部分的材料包括金属或金属合金,所述第二电极部分的材料包括透明导电材料。
- 如权利要求1-10任一所述的显示基板,其中,所述第二电极层还包括位于所述第一电极部分和所述第二电极部分之间的第三电极部分,所述第三电极部分分别与所述第一电极部分和所述第二电极部分电连接,第三电极部分厚度不均一。
- 如权利要求11所述的显示基板,其中,沿所述第一显示区指向所述第二显示区的方向,所述第三电极部分的厚度逐渐减小。
- 如权利要求11或12所述的显示基板,其中,沿所述第一显示区指向所述第二显示区的方向,所述第三电极部分的厚度先减小后增大。
- 一种电子装置,包括如权利要求1-13任一所述的显示基板和成像元件,其中,所述成像元件设置于所述第二显示区且位于所述第二电极层靠近所述衬底基板的一侧,所述成像元件包括感光面,所述感光面朝向所述第二电极层。
- 一种显示基板的制作方法,包括:在衬底基板形成显示区,所述显示区包括第一显示区和第二显示区,所述第一显示区的像素密度高于所述第二显示区的像素密度,其中,形成所述显示区包括:在所述衬底基板上依次形成第一电极层、发光功能层和第二电极层,所述第一电极层和所述第二电极层配置为对所述发光功能层施加电压以使所述发光功能层发光,其中,所述第二电极层包括位于所述第一显示区的第一电极部分和位于所述第二显示区的第二电极部分,所述第一电极部分与所述第二电极部分彼此电连接,所述第二电极部分的透光率高于所述第一电极部分的透光率。
- 如权利要求15所述的制作方法,其中,所述第一电极部分包括依次层叠设置于所述发光功能层上的第一子层和第二子层,所述第一子层更靠 近所述发光功能层;形成所述第二电极层包括:采用第一掩模板在所述第一显示区形成所述第一子层及在所述第二显示区形成所述第二电极部分,采用第二掩模板在所述第一显示区形成所述第二子层。
- 如权利要求15或16所述的制作方法,其中,所述第一电极部分包括依次层叠设置于所述发光功能层上的第一子层和第二子层,所述第一子层更靠近所述发光功能层;形成所述第二电极层包括:采用第一掩膜板在所述第一显示区形成所述第一子层,采用第二掩膜板在所述第一显示区形成所述第二子层及在所述第二显示区形成所述第二电极部分。
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