WO2021064892A1 - ドハティ増幅器 - Google Patents
ドハティ増幅器 Download PDFInfo
- Publication number
- WO2021064892A1 WO2021064892A1 PCT/JP2019/038906 JP2019038906W WO2021064892A1 WO 2021064892 A1 WO2021064892 A1 WO 2021064892A1 JP 2019038906 W JP2019038906 W JP 2019038906W WO 2021064892 A1 WO2021064892 A1 WO 2021064892A1
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- WO
- WIPO (PCT)
- Prior art keywords
- transmission line
- output
- input
- amplifier
- output transmission
- Prior art date
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- 230000005540 biological transmission Effects 0.000 claims abstract description 149
- 230000009466 transformation Effects 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000003786 synthesis reaction Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
Definitions
- the present invention relates to a Doherty amplifier.
- FIG. 1 is a diagram illustrating a configuration of a Doherty amplifier 100 according to a first embodiment.
- the Doherty amplifier 100 is a high frequency semiconductor device.
- the Doherty amplifier 100 includes an input terminal 10. One end of the input transmission line 11 is connected to the input terminal 10.
- a branch portion 12 is provided at the other end of the input transmission line 11.
- One end of the first input transmission line 14 and one end of the second input transmission line 16 are connected to the branch portion 12.
- the transistor chip has, for example, a SiC substrate and GaN provided on the SiC substrate.
- the carrier amplifier 20 and the peak amplifier 22 are, for example, GaN-HEMT.
- the first input transmission line 14 and the second input transmission line 16 differ in electrical length by ⁇ / 4.
- the first input transmission line 14 and the second input transmission line 16 are transmission lines for adjusting the phase of the input signal.
- the second input transmission line 16 has a longer electrical length by ⁇ / 4 than the first input transmission line 14.
- the wide portion 24b extends in a direction perpendicular to the first direction. Not limited to this, the wide portion 24b may extend in a direction intersecting the first direction. Further, a plurality of wide portions 24b may be provided on the first output transmission line 24.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
図1は、実施の形態1に係るドハティ増幅器100の構成を説明する図である。ドハティ増幅器100は高周波半導体装置である。ドハティ増幅器100は入力端子10を備える。入力端子10には入力伝送線路11の一端が接続される。入力伝送線路11の他端には、分岐部12が設けられる。分岐部12には、第1入力伝送線路14の一端と、第2入力伝送線路16の一端とが接続される。
図3は、実施の形態2に係るドハティ増幅器200の構成を説明する図である。ドハティ増幅器200は、第1出力伝送線路224の形状が実施の形態1と異なる。その他の構成は実施の形態1と同じである。
Claims (5)
- 入力端子と、
一端が前記入力端子に接続され、他端に分岐部が設けられた入力伝送線路と、
一端が前記分岐部と接続された第1入力伝送線路と、
一端が前記分岐部と接続された第2入力伝送線路と、
入力が前記第1入力伝送線路の他端に接続されたキャリア増幅器と、
入力が前記第2入力伝送線路の他端に接続されたピーク増幅器と、
一端が前記キャリア増幅器の出力に接続された第1出力伝送線路と、
一端が前記ピーク増幅器の出力に接続された第2出力伝送線路と、
一端が前記第1出力伝送線路の他端と、前記第2出力伝送線路の他端と接続された合成線路と、
前記合成線路の他端と接続された出力端子と、
を備え、
前記第1出力伝送線路は、前記第1出力伝送線路の他の部分と比較して幅が広い幅広部を有することを特徴とするドハティ増幅器。 - 前記幅広部は、前記キャリア増幅器のインピーダンス変成比が目標値と一致するような幅を有することを特徴とする請求項1に記載のドハティ増幅器。
- 前記第1出力伝送線路は、直線状の主部と、前記主部から突出した凸部を有し、
前記幅広部は、前記凸部と、前記主部のうち前記凸部に隣接する部分によって形成されることを特徴とする請求項1または2に記載のドハティ増幅器。 - 前記凸部は、前記主部の両側から突出することを特徴とする請求項3に記載のドハティ増幅器。
- 前記第1出力伝送線路は、
一端が前記キャリア増幅器の出力に接続され、前記入力端子から前記出力端子に向かう第1方向と交差する第2方向に延びる第1主部と、
一端が前記合成線路と接続され、前記第1方向と交差する第3方向に延びる第2主部と、
を備え、
前記幅広部は、前記第1主部の他端と前記第2主部の他端とを接続することを特徴とする請求項1または2に記載のドハティ増幅器。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/595,556 US20220231638A1 (en) | 2019-10-02 | 2019-10-02 | Doherty amplifier |
KR1020227009265A KR20220047641A (ko) | 2019-10-02 | 2019-10-02 | 도허티 증폭기 |
DE112019007775.9T DE112019007775T5 (de) | 2019-10-02 | 2019-10-02 | Doherty-Verstärker |
PCT/JP2019/038906 WO2021064892A1 (ja) | 2019-10-02 | 2019-10-02 | ドハティ増幅器 |
CN201980098263.1A CN114430884A (zh) | 2019-10-02 | 2019-10-02 | 多赫蒂放大器 |
JP2021550837A JP7207562B2 (ja) | 2019-10-02 | 2019-10-02 | ドハティ増幅器 |
TW109112152A TWI722864B (zh) | 2019-10-02 | 2020-04-10 | 多厄悌放大器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/038906 WO2021064892A1 (ja) | 2019-10-02 | 2019-10-02 | ドハティ増幅器 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021064892A1 true WO2021064892A1 (ja) | 2021-04-08 |
Family
ID=75337139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/038906 WO2021064892A1 (ja) | 2019-10-02 | 2019-10-02 | ドハティ増幅器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220231638A1 (ja) |
JP (1) | JP7207562B2 (ja) |
KR (1) | KR20220047641A (ja) |
CN (1) | CN114430884A (ja) |
DE (1) | DE112019007775T5 (ja) |
TW (1) | TWI722864B (ja) |
WO (1) | WO2021064892A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007043305A (ja) * | 2005-08-01 | 2007-02-15 | Mitsubishi Electric Corp | 高効率増幅器 |
WO2016098223A1 (ja) * | 2014-12-18 | 2016-06-23 | 株式会社 東芝 | ドハティ型増幅器 |
JP2019110458A (ja) * | 2017-12-19 | 2019-07-04 | 住友電気工業株式会社 | 増幅回路及び基板 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5420541A (en) * | 1993-06-04 | 1995-05-30 | Raytheon Company | Microwave doherty amplifier |
JP2008252215A (ja) * | 2007-03-29 | 2008-10-16 | Soshin Electric Co Ltd | ドハティ増幅器用合成器 |
KR101097605B1 (ko) * | 2009-11-04 | 2011-12-22 | 알.에프 에이치아이씨 주식회사 | 도허티 증폭기 |
KR101677555B1 (ko) * | 2010-02-25 | 2016-11-21 | 삼성전자주식회사 | 도허티 증폭기에서 낮은 전력 영역에서의 효율을 향상시키기 위한 장치 |
US8400216B2 (en) * | 2010-11-05 | 2013-03-19 | Postech Academy-Industry Foundation | 3-way Doherty power amplifier using driving amplifier |
KR101145666B1 (ko) * | 2011-02-24 | 2012-05-25 | 포항공과대학교 산학협력단 | 고주파용 3-스테이지 질화 갈륨계 고전자 이동도 트랜지스터(GaN HEMT) 도허티 전력증폭기 |
JP2014075717A (ja) | 2012-10-04 | 2014-04-24 | Fujitsu Ltd | ドハティ増幅器 |
EP2819304B1 (en) * | 2013-06-26 | 2018-12-19 | Ampleon Netherlands B.V. | Doherty amplifier |
US9252722B2 (en) * | 2013-12-20 | 2016-02-02 | Telefonaktiebolaget L M Ericsson (Publ) | Enhanced and versatile N-way doherty power amplifier |
US10116266B2 (en) * | 2015-01-09 | 2018-10-30 | Kabushiki Kaisha Toshiba | Doherty amplifier |
CN106571781B (zh) * | 2015-10-08 | 2020-09-25 | 大唐移动通信设备有限公司 | 一种Doherty功率放大电路 |
WO2017199366A1 (ja) * | 2016-05-18 | 2017-11-23 | 三菱電機株式会社 | ドハティ増幅器 |
US10284147B2 (en) * | 2016-12-15 | 2019-05-07 | Nxp Usa, Inc. | Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs |
US10594266B2 (en) * | 2017-12-04 | 2020-03-17 | Nxp Usa, Inc. | Multiple-path amplifier with series component along inverter between amplifier outputs |
-
2019
- 2019-10-02 WO PCT/JP2019/038906 patent/WO2021064892A1/ja active Application Filing
- 2019-10-02 DE DE112019007775.9T patent/DE112019007775T5/de not_active Withdrawn
- 2019-10-02 US US17/595,556 patent/US20220231638A1/en active Pending
- 2019-10-02 KR KR1020227009265A patent/KR20220047641A/ko not_active Application Discontinuation
- 2019-10-02 CN CN201980098263.1A patent/CN114430884A/zh active Pending
- 2019-10-02 JP JP2021550837A patent/JP7207562B2/ja active Active
-
2020
- 2020-04-10 TW TW109112152A patent/TWI722864B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007043305A (ja) * | 2005-08-01 | 2007-02-15 | Mitsubishi Electric Corp | 高効率増幅器 |
WO2016098223A1 (ja) * | 2014-12-18 | 2016-06-23 | 株式会社 東芝 | ドハティ型増幅器 |
JP2019110458A (ja) * | 2017-12-19 | 2019-07-04 | 住友電気工業株式会社 | 増幅回路及び基板 |
Also Published As
Publication number | Publication date |
---|---|
TW202116016A (zh) | 2021-04-16 |
US20220231638A1 (en) | 2022-07-21 |
JP7207562B2 (ja) | 2023-01-18 |
KR20220047641A (ko) | 2022-04-18 |
DE112019007775T5 (de) | 2022-06-15 |
JPWO2021064892A1 (ja) | 2021-04-08 |
TWI722864B (zh) | 2021-03-21 |
CN114430884A (zh) | 2022-05-03 |
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