WO2021047138A1 - Optical sensor, optical sensing system, and manufacturing method for optical sensor - Google Patents

Optical sensor, optical sensing system, and manufacturing method for optical sensor Download PDF

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Publication number
WO2021047138A1
WO2021047138A1 PCT/CN2020/072003 CN2020072003W WO2021047138A1 WO 2021047138 A1 WO2021047138 A1 WO 2021047138A1 CN 2020072003 W CN2020072003 W CN 2020072003W WO 2021047138 A1 WO2021047138 A1 WO 2021047138A1
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Prior art keywords
light
optical sensor
layer
shielding layer
optical
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PCT/CN2020/072003
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French (fr)
Chinese (zh)
Inventor
郑裕国
范成至
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神盾股份有限公司
郑裕国
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Publication of WO2021047138A1 publication Critical patent/WO2021047138A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/16—Human faces, e.g. facial parts, sketches or expressions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/18—Eye characteristics, e.g. of the iris
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Definitions

  • the embodiments of the present disclosure relate to an optical sensor, an optical sensing system using the same, and a manufacturing method thereof, and more particularly to a light (energy) directing structure with a controllable angle (angle controllable light (energy) directing structure) ), an optical sensor system using the same, and a manufacturing method thereof.
  • biometric recognition systems such as fingerprint recognition, face recognition, iris recognition, etc.
  • biometrics Due to the popularization of mobile payment, biometrics has become a standard function.
  • This kind of optical imaging device can partially transmit light through the screen (for example, organic light emitting diode (OLED) screen) to extract images of objects pressed on the top of the screen (for example, fingerprint images, which can be called Fingerprint sensing (fingerprint on display, FOD) under the screen.
  • OLED organic light emitting diode
  • FOD Fingerprint sensing
  • the module of the aforementioned optical imaging device cannot be thinned due to its internal structure (for example, its thickness is at least 3mm), and in order to match the user's habit of pressing the position, the position of the module overlaps with a part of the area where the battery is provided in the mobile electronic device. It is necessary to reduce the size of the battery to make room for the optical imaging device, which may cause the endurance of the mobile electronic device to decrease. In addition, with the development of technology, mobile electronic devices consume more and more power. Therefore, how to thin optical imaging devices without sacrificing battery space is the focus of the efforts of various companies.
  • the embodiments of the present disclosure provide an optical sensor having a light energy guiding structure (light guiding element) with a controllable angle, an optical sensing system using the optical sensor, and a manufacturing method thereof.
  • the light guide element can eliminate unnecessary stray light and effectively reduce the thickness of the optical sensor.
  • the embodiment of the present disclosure includes an optical sensor.
  • the optical sensor includes a substrate, and the substrate has a plurality of sensing pixels.
  • the optical sensor also includes a first light-shielding layer, the first light-shielding layer is disposed on the substrate and has a plurality of first through holes, and the first through holes correspond to the sensing pixels.
  • the optical sensor further includes a transparent medium layer, and the transparent medium layer is disposed on the first light-shielding layer.
  • the optical sensor includes a plurality of light guiding elements. Each of the light guiding elements includes a microprism and a microlens.
  • the micro prism is arranged in the transparent medium layer and corresponds to one of the first through holes.
  • the micro lens is arranged on the micro prism.
  • the embodiments of the present disclosure include an optical sensing system.
  • the optical sensing system includes a frame, and the frame has a accommodating slot.
  • the optical sensing system also includes the aforementioned optical sensor, and the optical sensor is disposed in the accommodating groove.
  • the optical sensing system also includes a display, and the display is disposed on the optical sensor.
  • the embodiments of the present disclosure include a method of manufacturing an optical sensor.
  • the manufacturing method includes providing a substrate.
  • the substrate has a plurality of sensing pixels.
  • the manufacturing method also includes forming a first light-shielding layer on the substrate.
  • the first light shielding layer has a plurality of first through holes, and the first through holes correspond to the sensing pixels.
  • the manufacturing method also includes forming a transparent medium layer on the first light-shielding layer.
  • the manufacturing method includes forming a plurality of microprisms in a transparent medium layer, the microprisms corresponding to the sensing pixels. This manufacturing method also includes forming a plurality of micro lenses on the micro prisms.
  • 1 to 4 are a series of cross-sectional views, which illustrate a method of manufacturing an optical sensor according to an embodiment of the present disclosure.
  • Fig. 5 is a partial enlarged view of the optical sensor shown in Fig. 4.
  • FIG. 6 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view of an optical sensing system according to an embodiment of the present disclosure.
  • FIG. 8 is a cross-sectional view of an optical sensing system according to another embodiment of the present disclosure.
  • FIG. 9 shows a cross-sectional view of an optical sensor according to an embodiment of the present disclosure.
  • FIG. 10 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.
  • TA_1, TA_I, TA_J, TA_K, TA_N light energy transmission axis
  • the light shielding layer and light guide element in the optical sensor can be used to make the sensing pixel receive light from a specific incident angle range, eliminate unnecessary stray light, and effectively reduce The thickness of the optical sensor. Therefore, the optical sensor of the embodiment of the present disclosure can be easily installed between the battery and the display of a mobile electronic device such as a mobile phone, and the light source of the display can be used to realize under-screen optical sensing.
  • FIGS. 1 to 4 are a series of cross-sectional views, which illustrate a method of manufacturing the optical sensor 200 according to an embodiment of the present disclosure. It should be particularly noted that, in order to clearly illustrate the features of the embodiments of the present disclosure, some elements may be omitted in FIGS. 1 to 4.
  • the substrate 201 may have a plurality of sensor pixels 203.
  • the substrate 201 may be a semiconductor substrate, such as a silicon substrate.
  • the aforementioned semiconductor substrate may also include elemental semiconductors, such as germanium; compound semiconductors, such as gallium nitride and silicon carbide.
  • alloy semiconductor alloy semiconductor
  • alloy semiconductor silicon germanium alloy (SiGe), phosphorous gallium arsenic alloy (GaAsP), aluminum arsenic aluminum indium alloy (AlInAs), aluminum gallium arsenic alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), gallium indium phosphate alloy (GaInP) / Or indium gallium arsenide alloy (GaInAsP) or a combination of the foregoing materials.
  • SiGe silicon germanium alloy
  • GaAsP phosphorous gallium arsenic alloy
  • AlInAs aluminum arsenic aluminum indium alloy
  • AlGaAs aluminum gallium arsenic alloy
  • GaInAs gallium indium phosphate alloy
  • GaInAsP gallium indium phosphate alloy
  • GaInAsP gallium indium phosphate alloy
  • the substrate 201 may also be a semiconductor on insulator substrate.
  • the semiconductor on insulator substrate may include a bottom plate, a buried oxide layer disposed on the bottom plate, and a semiconductor on the buried oxide layer. Semiconductor layer.
  • the conductivity type of the substrate 201 may be n-type or p-type.
  • the substrate 201 may include various isolation components (not shown) to define the active area and electrically isolate the active area elements in/on the substrate 201.
  • the isolation components include shallow trench isolation (STI) components, local oxidation of silicon (LOCOS) components, other suitable isolation components, or a combination of the foregoing.
  • the substrate 201 may include various p-type doped regions and/or n-type doped regions (not shown) formed by processes such as ion implantation and/or diffusion.
  • the doped regions can form elements such as transistors and photodiodes.
  • the substrate 201 may also include various active components, passive components, and various conductive components (for example, conductive pads, wires, or vias).
  • the sensing pixel 203 may be connected to a signal processing circuit (not shown). In some embodiments, the number of sensing pixels 203 depends on the size of the area of the optical sensing area (the area SR of the optical sensing area as shown in FIG. 4). Each sensing pixel 203 may include one or more photodetectors. In some embodiments, the light detector may include a photodiode. The photodiode may include a photoelectric material with a three-layer structure of a p-type semiconductor layer, an intrinsic layer, and an n-type semiconductor layer.
  • the intrinsic layer can absorb light to generate excitons, and the excitons are divided into electrons and holes at the junction of the p-type semiconductor layer and the n-type semiconductor layer to generate a current signal.
  • the light detector may be a CMOS image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-side illumination (BSI) CMOS image sensor Device.
  • the photodetector may also include a charged coupling device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing.
  • the sensing pixel 203 can convert the received light signal into an electrical signal through a photodetector, and process the aforementioned electrical signal through a signal processing circuit.
  • the sensing pixels 203 may be arranged in an array to form a sensing pixel array, but the embodiments of the present disclosure are not limited thereto.
  • the cross-sectional view shown in the drawings of the present disclosure only shows one column of the array of sensing pixels 203, and is located below the upper surface of the substrate 201. It should be noted that the number and arrangement of the sensing pixels 203 shown in the drawings of all the embodiments are only exemplary, and the embodiments of the present disclosure are not limited thereto.
  • the sensing pixels 203 can be an array with any number of rows and columns or other arrangements.
  • a dielectric layer 202 is formed on the substrate 201. As shown in FIG. 2, the dielectric layer 202 can cover the sensing pixel 203.
  • the material of the dielectric layer 202 may include transparent photoresist, polyimide, epoxy, other suitable materials, or a combination of the foregoing materials, but the embodiments of the present disclosure are not limited thereto.
  • the dielectric layer 202 may include a photo-curable material, a heat-curable material, or a combination of the foregoing.
  • a spin-on coating process can be used to coat the dielectric layer 202 on the substrate 201 and the sensing pixels 203, but the embodiment of the present disclosure is not limited to this.
  • a first light shielding layer 204 is formed on the dielectric layer 202. That is, the dielectric layer 202 is formed between the substrate 201 and the first light shielding layer 204, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the first light shielding layer 204 may also be directly formed on the substrate 201 without including the dielectric layer 202. As shown in FIG. 2, the first light shielding layer 204 may have a plurality of first apertures 204A, and the first apertures 204A may correspond to the sensing pixels 203.
  • the first light-shielding layer 204 may include a light-shielding material, which has a transmittance of less than 1% for light below the 1200 nm wavelength range, but the embodiment of the present disclosure is not limited thereto.
  • the first light-shielding layer 204 may include a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti), but the embodiment of the present disclosure is not limited thereto.
  • a metal material such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti)
  • chemical vapor deposition chemical vapor deposition, CVD
  • physical vapor deposition physical vapor deposition
  • PVD physical vapor deposition
  • the first light-shielding layer 204 is formed on the substrate 201 (pulsed laser deposition, PLD), atomic layer deposition (ALD), other suitable deposition, or a combination of the foregoing.
  • the first light-shielding layer 204 may include a polymer material with light-shielding properties, such as epoxy resin, polyimide, and the like.
  • the first light shielding layer 204 may be formed on the substrate 201 by, for example, spin-coating, chemical vapor deposition (CVD), other appropriate methods, or a combination of the above.
  • the thickness of the first light shielding layer 204 formed by the foregoing method is in the range of about 0.3 ⁇ m to about 5 ⁇ m, and may be, for example, 2 ⁇ m.
  • the thickness of the first light-shielding layer 204 depends on the light-shielding ability of the material of the first light-shielding layer 204.
  • the light-shielding ability of the light-shielding material included in the first light-shielding layer 204 may have a negative correlation with its thickness.
  • a patterning process may be performed on the first light shielding layer 204 to form a plurality of first through holes 204A having a first aperture A1.
  • the aforementioned patterning process may include a photolithography process and an etching process.
  • the photolithography process can include photoresist coating (such as spin coating), soft baking, exposure patterning, post-exposure baking, photoresist development, cleaning and drying (such as hard baking), other appropriate processes or the foregoing The combination.
  • the etching process may include a wet etching process, a dry etching process (such as reactive ion etching (RIE), plasma etching, ion milling), other suitable processes, or a combination of the foregoing.
  • RIE reactive ion etching
  • the first aperture A1 of the first through hole 204A formed by the foregoing method is in the range of about 0.3 ⁇ m to about 50 ⁇ m, for example, about 4 ⁇ m to about 5 ⁇ m, but the embodiment of the present disclosure is not limited thereto.
  • first through holes 204A and the sensing pixels 203 shown in FIG. 2 are correspondingly arranged in a one-to-one manner.
  • the first through holes 204A and the sensing pixels 203 can also be correspondingly arranged in a one-to-many or many-to-one manner.
  • one first through hole 204A may expose more than two sensing pixels 203, or one sensing pixel 203 may be exposed from more than two first through holes 204A.
  • FIG. 2 only shows an exemplary setting manner, and the embodiment of the present disclosure is not limited thereto.
  • the field of view (FOV) range of incident light can be adjusted.
  • a protective layer 205 and an optical filter layer 206 are sequentially formed on the first light shielding layer 204.
  • the protective layer 205 can be used as a protective layer for the integrated circuit, and the material of the protective layer 205 can include silicon oxide, silicon nitride, other suitable materials, or a combination of the foregoing, but the embodiments of the present disclosure are not based on this Is limited.
  • the optical filter layer 206 may be an infrared cut filter (ICF). Visible light has high transmittance to the infrared filter layer, and infrared light has high reflectivity to the infrared filter layer, which can reduce the interference of infrared rays from sunlight, for example.
  • ICF infrared cut filter
  • a transparent medium layer 207 is formed on the optical filter layer 206. That is, the optical filter layer 206 may be formed between the first light shielding layer 204 and the transparent medium layer 207, but the present disclosure is not limited to this. In some other embodiments, the transparent medium layer 207 can also be directly formed on the first light-shielding layer 204 without the optical filter layer 206 or the optical filter layer 206 in other forms.
  • the optical filter layer 206 may be in the form of an independent optical filter plate, which is disposed on the transparent medium layer 207 (similar to the structure shown in FIG. 8 below).
  • the transparent medium layer 207 may include a UV-curable material, a thermosetting material, or a combination of the foregoing.
  • the transparent medium layer 207 may include, for example, poly(methylmethacrylate) (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (polyethylene naphthalate, PEN) polycarbonate (PC), perfluorocyclobutyl (PFCB) polymer, polyimide (PI), acrylic resin, epoxy resin (epoxy resin), poly Polypropylene (PP), polyethylene (PE), polystyrene (PS), polyvinyl chloride (PVC), other suitable materials or a combination of the foregoing, but the embodiments of the present disclosure are not based on This is limited.
  • PMMA poly(methylmethacrylate)
  • PET polyethylene terephthalate
  • PET polyethylene naphthalate
  • PC polycarbonate
  • PFCB perfluorocyclobutyl
  • PI polyimide
  • acrylic resin
  • the transparent dielectric layer 207 is formed on the first light-shielding layer 204, but the original The disclosed embodiments are not limited to this.
  • the thickness of the transparent medium layer 207 formed by the foregoing process is in the range of about 1 ⁇ m to about 100 ⁇ m, and may be, for example, 10 ⁇ m to 50 ⁇ m.
  • the transparent medium layer 207 formed by the foregoing process may have high yield and good quality.
  • the offset distance of the light after passing through the light guide element (210) formed later can be increased or decreased, thereby improving the accuracy of the incident light angle that the array of sensing pixels 203 can receive.
  • a plurality of microprisms 212 are formed in the transparent medium layer 207 and a plurality of microlenses 211 are formed on the transparent medium layer 207.
  • the microlenses 211 may be formed on the microprisms 212.
  • the micro lens 211 and the micro prism 212 may correspond to the sensing pixel 203.
  • each microprism 212 corresponds to one of the plurality of first through holes 204A of the first light shielding layer 204, and the microprism 212 can be connected (directly contacted) with the microlens 211, but the embodiment of the present disclosure is not Limit this.
  • the micro lens 211 and the micro prism 212 may also be separated from each other, that is, the micro lens 211 and the micro prism 212 may be separated by a distance.
  • the transparent medium layer 207, the micro lens 211, and the micro prism 212 may be homogeneous materials or heterogeneous materials, and a suitable combination of materials may be selected according to actual requirements.
  • a gray-scale mask can be used to fill the transparent medium layer 207 with suitable materials after exposure, development, and etching to form the transparent medium layer 207 to form the microprisms 212.
  • a thick film of polymer material can be formed on the transparent medium layer 207 by high-temperature reflow, and a hemispherical structure is formed by its cohesive force to form the microlens 211, but the embodiment of the present disclosure is not Limit this.
  • the transparent medium layer 207, the micro lens 211, and the micro prism 212 may also include a dielectric material, such as glass, which can further improve the light transmittance, but the embodiment of the present disclosure is not limited thereto.
  • the effect of surface tension can be used to form the hemispherical microlens 211, and the required microlens can be adjusted by controlling the heating temperature. 211 radius of curvature.
  • the thickness of the microlens 211 ranges from about 1 ⁇ m to about 50 ⁇ m. It should be noted that the profile of the microlens 211 is not limited to a hemispherical shape. The embodiments of the present disclosure can also adjust the profile of the microlens 211 according to the required incident light angle, for example, it may be aspheric.
  • the microlens 211 and the microprism 212 can be regarded as a light guiding element 210, and the light guiding element 210 may be arranged in an array, but the embodiment of the present disclosure is not limited to this. That is, the light guide element 210 and the sensing pixel 203 can be correspondingly arranged in a one-to-one, one-to-many or many-to-one manner, but the embodiment of the present disclosure is not limited to this.
  • the optical sensor 200 of the embodiment of the present disclosure is completed.
  • the optical filter layer 206 of the optical sensor 200 may be in the form of an independent optical filter plate, which is disposed on the light guide element 210 (similar to the structure shown in FIG. 8 ), but the present disclosure The embodiment is not limited to this.
  • the microprism 212 may have a top surface 212T and a bottom surface 212B, and the top surface 212T and the bottom surface 212B may form an included angle ⁇ .
  • the angle ⁇ formed by the top surface 212T and the bottom surface 212B is variable, which can be adjusted according to the position of the microprism 212.
  • each light guide element is different depending on where it is set up, for ease of description, 210_N will represent each light guide element, TA_N will represent the light energy transmission axis of each light guide element, and ANG_N will represent the collection of each light guide element.
  • the light azimuth angle, L_N represents the parallel target incident light of each light guiding element, LX_N represents the parallel non-target incident light of each light guiding element, and ANGX_N represents the parallel non-target incident light of each light guiding element relative to it.
  • FIG. 5 is a partially enlarged view of the optical sensor 200 shown in FIG. 4.
  • the light guiding element 210_N may include a microlens 211_N and a microprism 212_N.
  • the microlens 211_N may be used for condensing light
  • the microprism 212_N may be used for deflecting light.
  • the light guiding element 210_N may have a light energy transmission axis TA_N, and a light receiving azimuth ANG_N corresponding to the light energy transmission axis TA_N is the normal line NORM of the optical sensor 200 and the light energy transmission axis TA_N.
  • the aforementioned multiple parallel target incident lights are incident lights L_N parallel to the light energy transmission axes TA_N and incident on the microlens 211_N; and the aforementioned multiple parallel non-target incident lights are not parallel to the light energy transmission axes
  • the non-target incident light LX_N and each light energy transmission axis TA_N have an off-azimuth angle ANGX_N.
  • the target incident light L_N travels along the light energy transmission axis TA_N (that is, parallel to the light energy transmission axis TA_N), but the embodiment of the present disclosure is not limited to this.
  • the angle between the target incident light L_N and the light energy transmission axis TA_N that can be received by the sensing pixel 203 through the light guide element 210_N can range from -3.5 degrees to 3.5 degrees, -4 degrees To +4 degrees or -5 degrees to +5 degrees; the deviation azimuth angle ANGX_N can be between 3.5 degrees to 90 degrees, 4 degrees to 90 degrees, or 5 degrees to 90 degrees. That is, the non-target incident light LX_N whose included angle with the light energy transmission axis TA_N is greater than 3.5 degrees (or greater than 4 degrees, or greater than 5 degrees) will not be incident on the sensing pixel 203.
  • the light guide element 210_N of the optical sensor 200 can enter the target incident light L_N of the optical sensor 200 from the outside through the transparent medium layer 207 and enter the sensing pixel 203, and enter the optical sensor from the outside.
  • the non-target incident light LX_N of the sensor 200 is incident on the outside of the sensing pixel 203, thereby sensing an image of the target object.
  • the target incident light L_N may enter the sensing pixel 203 through the first through hole 204A, and the non-target incident light LX_N will not pass through the first through hole 204A (for example, enter the first light shielding layer 204 to subtract the first through hole 204A).
  • Other areas of hole 204A are examples of hole 204A.
  • the optical sensor 200 of the embodiment of the present disclosure can control the relative position (for example, aligning the light energy transmission axis) between the lens 211 of the light guiding element 210, the microprism 212, and the first light hole 204A (and the sensing pixel 203) Only a specific angle of incident light (parallel to the light energy transmission axis) can be sensed by the sensing pixel 203, so the quality of the optical sensor 200 can be effectively improved.
  • the optical sensor of the embodiment of the present disclosure can effectively reduce the process cost and simplify the manufacturing process.
  • each light guide element is different depending on the position where it is installed, the target incident light and the non-target incident light of each light guide element may be different.
  • the light guiding element 210_1 and the light guiding element 210_K have different light energy transmission axis TA_1 and light energy transmission axis TA_K, respectively.
  • the target incident light L_1 of the light guiding element 210_1 and the target incident light L_K of the light guiding element 210_K come from different light receiving azimuths, they are directed to the corresponding sensing pixel through the light guiding element 210_1 and the light guiding element 210_K respectively. 203.
  • the non-target incident light LX_1 of the light guiding element 210_1 and the non-target incident light LX_K of the light guiding element 210_K have an off-azimuth angle ANGX_1 and an off-azimuth angle ANGX_K respectively. Enter the corresponding sensing pixel 203.
  • the light energy transmission axis of the light guide element 210 corresponding from the center to the periphery (for example, TA_1, TA_K, TA_I, and TA_J in FIG. 4),
  • the light-receiving azimuth angle of each light guiding element can be shifted from 0 degree to a predetermined oblique angle (for example, 35 degrees) by the microprism of each light guiding element.
  • the incident oblique angle can be gradually changed (continuous change of the light receiving azimuth angle of the light energy transmission axis). As shown in FIG.
  • the optical sensor 200 can sense a smaller area SR of the array of pixels 203 and a larger area CR of the object to be measured (such as a fingerprint contact area), thereby increasing the accuracy of sensing. And effectively reduce the cost, but the embodiment of the present disclosure is not limited to this.
  • FIG. 6 shows a cross-sectional view of an optical sensor 200-1 according to another embodiment of the present disclosure.
  • the optical sensor 200-1 can sense a larger area SR of the array of pixels 203 and a smaller area CR of the object to be measured.
  • the position of the light guiding element 210 (microprism 212) can be adjusted according to actual needs to achieve different light collection effects.
  • FIG. 7 shows a cross-sectional view of an optical sensing system 600 according to an embodiment of the present disclosure.
  • the optical sensing system 600 may be, for example, an electronic device such as a mobile phone or a tablet computer, which may include a frame 400, an optical sensor 200, and a display 300, but the embodiments of the present disclosure are not limited to this .
  • the optical sensing system 600 may further include a base 610, and the base 610 may be, for example, a part of the housing of an electronic device.
  • the battery 500 can be disposed on the base 610.
  • the frame 400 can be disposed above the battery 500 and has a receiving groove 410, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the frame 400 may not have the accommodating groove 410, depending on actual requirements.
  • the optical sensor 200 may be disposed on the frame 400. As shown in FIG. 7, the optical sensor 200 can be disposed in the receiving groove 410 of the frame 400 and located on a bottom 420 of the receiving groove 410 to sense an image of a target F.
  • the structure of the optical sensor 200 can be as described above, and will not be repeated here.
  • the display 300 can be arranged above the optical sensor 200 for displaying information.
  • the target F can be located on or above the display 300.
  • the optical sensor 200 can sense the image of the target F through the display 300, and the battery 500 can supply power to the optical sensor 200 and the display 300 to maintain the operation of the electronic device.
  • a distance d between the bottom 420 of the accommodating groove 410 and the display 300 may be between 0.1 mm and 0.5 mm, between 0.2 and 0.5 mm, between 0.3 and 0.5 mm, or between 0.4 and 0.5 mm.
  • the embodiments of the present disclosure are not limited thereto.
  • the distance d may be defined as the shortest distance between the bottom 420 of the accommodating groove 410 and the display 300 in a direction ND parallel to the normal direction of the frame 400.
  • the optical sensor 200 is applied to the optical sensing system 600, so that the overall height or thickness of the module can be less than 0.5mm, which can meet the requirements of thinning. Therefore, the configuration of the battery 500 can be reduced without affecting the configuration of the battery 500.
  • the optical sensor 200 is disposed under the screen (such as the display 300) of the electronic device and between the battery. It should be particularly noted that the optical sensor and the optical sensing system using the optical sensor in the embodiments of the present disclosure are not limited to fingerprint recognition, and can also be applied to, for example, vein, blood flow rate, and blood oxygen detection.
  • the optical sensor of the embodiment of the present disclosure and the optical sensing system using it can be used for non-contact image shooting (such as an under-screen camera, etc.) to shoot, for example, human faces (for example, for facial recognition) or eyes. (For example for iris recognition) or perform general camera functions.
  • non-contact image shooting such as an under-screen camera, etc.
  • human faces for example, for facial recognition
  • eyes for example, for iris recognition
  • general camera functions for general camera functions.
  • the display 300 may include an organic light-emitting diode (OLED) display or a micro LED display or various other displays.
  • OLED organic light-emitting diode
  • the display 300 in the optical sensing system 600 can be used as a light source, and the light emitted by it will illuminate a target F that is in contact or non-contact with the upper surface of the display 300, and the target F reflects this light to
  • the optical sensor 200 is arranged under the display 300 to sense and recognize the contour feature of the target F (for example, the fingerprint feature of a finger).
  • the optical sensor 200 in the optical sensing system 600 can also be used with light sources of other shapes and wavelengths (for example, infrared light sources), but the embodiments of the present disclosure are not limited thereto.
  • the optical sensor can also perform passive image extraction, that is, there is no need to project a light source to the target (object) F to be measured.
  • the optical sensor 200 may be configured to be included in an optical sensor module 1300.
  • the optical sensor module 1300 may include a carrier board 1301, a flexible circuit board 1302, and a bond wire 1303 that electrically connects the optical sensor 200 and the flexible circuit board 1302. 1303 can be encapsulated and protected by the sealant layer 1306.
  • the top surface of the sealant layer 1306 may be flush with the top surface of the transparent medium layer 207, but the embodiment of the present disclosure is not limited to this.
  • the material of the bonding wire 1303 may include aluminum (Al), copper (Cu), gold (Au), the foregoing alloys, other suitable conductive materials, or a combination of the foregoing, but the embodiments of the present disclosure are not based on this Is limited.
  • FIG. 8 shows a cross-sectional view of an optical sensing system 600' according to another embodiment of the present disclosure.
  • the optical sensing system 600' uses an optical filter plate 900 instead of the optical filter layer 206.
  • the optical filter plate 900 can be an independent optical filter plate, and the dam structure or frame 1305 provided on the flexible circuit board 1302 can be used to carry the optical filter plate 900. That is, the optical filter plate 900 can be disposed above the micro lens 210 through the optical sensor module 1300.
  • the transparent medium layer 207 is disposed on the protective layer 250.
  • the optical filter plate 900 is disposed above the light guide element 210, and performs wavelength filtering of incident light. The rest of the parts that are the same as those in FIG. 7 will not be repeated here.
  • optical sensor module 1300 and the optical filter plate 900 shown in FIG. 8 are disposed on the frame 400 and separated from the display 300, the embodiment of the present disclosure is not limited thereto. In some other embodiments, the optical sensor module 1300 and the optical filter plate 900 may also be attached to the lower surface 300B of the display 300.
  • FIG. 9 shows a cross-sectional view of an optical sensor 200-2 according to an embodiment of the present disclosure.
  • the optical sensor 200-2 shown in FIG. 9 further includes a lens shading layer 213 (can be regarded as a second shading layer), and the lens shading layer 213 It is arranged on the first light shielding layer 204.
  • the lens light shielding layer 213 may be disposed on the transparent medium layer 207 and located in the plurality of gaps G between the microlenses 211.
  • the lens shading layer 213 may, for example, expose (at least part of) the curved area of the micro lens 211.
  • the lens shading layer 213 may have a plurality of through holes (corresponding to the gap G), and the microlenses 211 of the light guide element 210 may be disposed in these through holes, but the embodiment of the present disclosure is not limited thereto.
  • light such as stray light L1 shown in FIG. 9
  • the lens shading layer 213 can block the aforementioned stray light L1 from entering the sensing pixels 203, effectively preventing the interference of stray light, and improving the image quality.
  • FIG. 10 shows a cross-sectional view of an optical sensor 200-3 according to another embodiment of the present disclosure.
  • the optical sensor 200-3 shown in FIG. 10 further includes a second light-shielding layer 208 and a transparent medium layer 209, and the second light-shielding layer 208 and The transparent medium layer 209 is all disposed on the first light-shielding layer 204.
  • the second light-shielding layer 208 is located on the transparent medium layer 207
  • the transparent medium layer 209 is located on the second light-shielding layer 208
  • the light guide element 210 is located on the transparent medium layer 209 (for example, the microlens 211 is located on the transparent medium layer).
  • the microprism 212 is arranged in the transparent medium layer 209).
  • the second light shielding layer 208 may have a plurality of second through holes 208A, the second through holes 208A may correspond to the first through holes 204A, and each of the second through holes 208A may have a second aperture A2.
  • the second aperture A2 of the second through hole 208A is larger than the first aperture A1 of the first through hole 204, but the embodiment of the present disclosure is not limited thereto.
  • the thickness of the second light shielding layer 208 is different from the thickness of the first light shielding layer 204.
  • the thickness of the second light-shielding layer 208 may be greater than the thickness of the first light-shielding layer 204, but the embodiment of the present disclosure is not limited thereto. As shown in FIG.
  • the microprism 212 of the light guiding element 210 is disposed in the second through hole 208A.
  • the microprism 212 may be completely or only partially disposed in the second through hole 208A, but the embodiment of the present disclosure is not limited thereto.
  • crosstalk may occur between adjacent light guiding elements 210 (not limited to the closest light guiding element 210). That is, the stray light (such as stray light L2 shown in FIG. 10) adjacent to the light guiding element of a target light guiding element may be coupled into the target incident light of the target light guiding element, and be incident to the target light guiding element through the first through hole 204A.
  • the sensing pixels 203 corresponding to the target light guide element cause interference and reduce image quality.
  • the second light shielding layer 208 can shield the stray light L2 entering the adjacent light guide elements from the outside from entering the sensing pixel 203, effectively preventing the interference of stray light, and Improve image quality.
  • the optical sensor 200-2 shown in FIG. 9 or the optical sensor 200-3 shown in FIG. 10 may be substituted for the optical sensor 200 shown in FIG.
  • the optical sensing system 600 or the optical sensing system 600' shown in FIG. 8
  • the sensing pixel can also receive light incident from a specific range of viewing angle without an additional light shielding layer, and the optical sensing can be reduced.
  • the thickness of the device can also receive light incident from a specific range of viewing angle without an additional light shielding layer, and the optical sensing can be reduced.
  • the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will realize that the present disclosure can be implemented without one or more specific features or advantages of a specific embodiment. In other cases, additional features and advantages can be recognized in certain embodiments, and these features and advantages may not be present in all embodiments of the present disclosure.

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Abstract

The present disclosure provides an optical sensor, an optical sensing system, and a manufacturing method for an optical sensor. The optical sensor comprises a substrate, and the substrate is provided with a plurality of sensing pixels. The optical sensor also comprises a first light shielding layer, the first light shielding layer is arranged on the substrate and provided with a plurality of first through holes, and the first through holes correspond to the sensing pixels. The optical sensor further comprises a transparent dielectric layer, and the transparent dielectric layer is arranged on the first light shielding layer. The optical sensor comprises a plurality of light guide elements. Each of the light guide elements comprises a micro-prism and a micro-lens. The micro-lens is arranged in the transparent dielectric layer and corresponds to one of the first through holes. The micro-lens is arranged on the micro-prism.

Description

光学感测器、光学感测***以及光学感测器的制造方法Optical sensor, optical sensor system, and manufacturing method of optical sensor 技术领域Technical field
本公开实施例是涉及一种光学感测器、应用其的光学感测***及其制造方法，且特别涉及一种具有可控角度的光(能量)导向结构(angle controllable light(energy)directing structure)的光学感测器、应用其的光学感测***及其制造方法。The embodiments of the present disclosure relate to an optical sensor, an optical sensing system using the same, and a manufacturing method thereof, and more particularly to a light (energy) directing structure with a controllable angle (angle controllable light (energy) directing structure) ), an optical sensor system using the same, and a manufacturing method thereof.
背景技术Background technique
现今的移动电子装置(例如手机、平板电脑、笔记本电脑等)通常配备有生物识别***，例如指纹识别、脸部识别、虹膜识别等，用以保护个人资料安全。由于移动支付普及化，生物识别更是变成一种标准的功能。Today's mobile electronic devices (such as mobile phones, tablet computers, notebook computers, etc.) are usually equipped with biometric recognition systems, such as fingerprint recognition, face recognition, iris recognition, etc., to protect personal data security. Due to the popularization of mobile payment, biometrics has become a standard function.
随着移动电子装置走向大显示区域及窄边框的趋势，已发展出新的光学成像装置设置于屏幕下方。这种光学成像装置可通过屏幕(例如，有机发光二极体(organic light emitting diode,OLED)屏幕)部分透光，以提取按压于屏幕上方的物体的影像(例如，指纹影像，其可称为屏幕下指纹感测(fingerprint on display,FOD)。With the trend of mobile electronic devices moving towards large display areas and narrow bezels, new optical imaging devices have been developed to be placed under the screen. This kind of optical imaging device can partially transmit light through the screen (for example, organic light emitting diode (OLED) screen) to extract images of objects pressed on the top of the screen (for example, fingerprint images, which can be called Fingerprint sensing (fingerprint on display, FOD) under the screen.
然而，前述光学成像装置的模块由于内部结构导致无法薄型化(例如其厚度至少3mm)，且为了配合使用者按压位置的习惯，此模块的位置会与行动电子装置中设置电池的部分区域重叠，必须要缩小电池的尺寸以让出空间设置此光学成像装置，可能导致行动电子装置的续航力下降。此外，随着技术发展，行动电子装置的耗电量越来越大，因此，如何在不牺牲电池空间的前提下薄型化光学成像装置，为各家努力的重点。However, the module of the aforementioned optical imaging device cannot be thinned due to its internal structure (for example, its thickness is at least 3mm), and in order to match the user's habit of pressing the position, the position of the module overlaps with a part of the area where the battery is provided in the mobile electronic device. It is necessary to reduce the size of the battery to make room for the optical imaging device, which may cause the endurance of the mobile electronic device to decrease. In addition, with the development of technology, mobile electronic devices consume more and more power. Therefore, how to thin optical imaging devices without sacrificing battery space is the focus of the efforts of various companies.
公开内容Public content
本公开实施例提出一种具有可控角度的光能量导向结构(光导向元件)的光学感测器、应用其的光学感测***及其制造方法。在一些实施例中，通过此光导向元件可消除不必要的杂散光，并可有效缩小光学感测器的厚度。The embodiments of the present disclosure provide an optical sensor having a light energy guiding structure (light guiding element) with a controllable angle, an optical sensing system using the optical sensor, and a manufacturing method thereof. In some embodiments, the light guide element can eliminate unnecessary stray light and effectively reduce the thickness of the optical sensor.
本公开实施例包含一种光学感测器。光学感测器包含一基板，基板具有多个感测像素。光学感测器也包含一第一遮光层，第一遮光层设置于基板之上，并具有多个第一通孔，第一通孔对应于感测像素。光学感测器还包含一透明介质层，透明介质层设置于第一遮光层之上。光学感测器包含多个光导向元件。光导向元件中的每一个包含一微棱镜 及一微透镜。微棱镜设置于透明介质层中并对应于第一通孔的其中之一。微透镜设置于微棱镜之上。The embodiment of the present disclosure includes an optical sensor. The optical sensor includes a substrate, and the substrate has a plurality of sensing pixels. The optical sensor also includes a first light-shielding layer, the first light-shielding layer is disposed on the substrate and has a plurality of first through holes, and the first through holes correspond to the sensing pixels. The optical sensor further includes a transparent medium layer, and the transparent medium layer is disposed on the first light-shielding layer. The optical sensor includes a plurality of light guiding elements. Each of the light guiding elements includes a microprism and a microlens. The micro prism is arranged in the transparent medium layer and corresponds to one of the first through holes. The micro lens is arranged on the micro prism.
本公开实施例包含一种光学感测***。光学感测***包含一框架，框架具有一容置槽。光学感测***也包含前述的光学感测器，光学感测器设置于容置槽中。光学感测***还包含一显示器，显示器设置于光学感测器之上。The embodiments of the present disclosure include an optical sensing system. The optical sensing system includes a frame, and the frame has a accommodating slot. The optical sensing system also includes the aforementioned optical sensor, and the optical sensor is disposed in the accommodating groove. The optical sensing system also includes a display, and the display is disposed on the optical sensor.
本公开实施例包含一种光学感测器的制造方法。此制造方法包含提供一基板。基板具有多个感测像素。此制造方法也包含在基板之上形成一第一遮光层。第一遮光层具有多个第一通孔，且第一通孔对应于感测像素。此制造方法还包含在第一遮光层之上形成一透明介质层。此制造方法包含在透明介质层中形成多个微棱镜，微棱镜对应于感测像素。此制造方法也包含在微棱镜之上形成多个微透镜。The embodiments of the present disclosure include a method of manufacturing an optical sensor. The manufacturing method includes providing a substrate. The substrate has a plurality of sensing pixels. The manufacturing method also includes forming a first light-shielding layer on the substrate. The first light shielding layer has a plurality of first through holes, and the first through holes correspond to the sensing pixels. The manufacturing method also includes forming a transparent medium layer on the first light-shielding layer. The manufacturing method includes forming a plurality of microprisms in a transparent medium layer, the microprisms corresponding to the sensing pixels. This manufacturing method also includes forming a plurality of micro lenses on the micro prisms.
附图说明Description of the drawings
以下将配合所附附图详述本公开实施例。应注意的是，各种特征部件并未按照比例绘制且仅用以说明例示。事实上，元件的尺寸可能经放大或缩小，以清楚地表现出本公开实施例的技术特征。The embodiments of the present disclosure will be described in detail below with the accompanying drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustration and illustration. In fact, the size of the element may be enlarged or reduced to clearly show the technical features of the embodiments of the present disclosure.
图1至图4是一系列的剖面图，其绘示根据本公开一实施例的光学感测器的制造方法。1 to 4 are a series of cross-sectional views, which illustrate a method of manufacturing an optical sensor according to an embodiment of the present disclosure.
图5是图4所示的光学感测器的部分放大图。Fig. 5 is a partial enlarged view of the optical sensor shown in Fig. 4.
图6绘示根据本公开另一实施例的光学感测器的剖面图。FIG. 6 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.
图7绘示根据本公开一实施例的光学感测***的剖面图。FIG. 7 is a cross-sectional view of an optical sensing system according to an embodiment of the present disclosure.
图8绘示根据本公开另一实施例的光学感测***的剖面图。FIG. 8 is a cross-sectional view of an optical sensing system according to another embodiment of the present disclosure.
图9绘示根据本公开一实施例的光学感测器的剖面图。FIG. 9 shows a cross-sectional view of an optical sensor according to an embodiment of the present disclosure.
图10绘示根据本公开另一实施例的光学感测器的剖面图。FIG. 10 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.
附图标记说明如下：The reference signs are explained as follows:
200、200-1、200-2、200-3～光学感测器200, 200-1, 200-2, 200-3～optical sensor
201～基板201～Substrate
202～介电层202～Dielectric layer
203～感测像素203～Sensing pixels
204～第一遮光层204~The first shading layer
204A～第一通孔204A～The first through hole
205～保护层205～Protection layer
206～光学滤波层206～Optical filter layer
207～透明介质层207～Transparent medium layer
208～第二遮光层208～Second shading layer
208A～第二通孔208A～Second through hole
209～透明介质层209～Transparent medium layer
210、210_1、210_K、210_N～光导向元件210, 210_1, 210_K, 210_N～light guide element
211、211_1、211_K、211_N～微透镜211, 211_1, 211_K, 211_N～Micro lens
212、212_1、212_K、212_N～微棱镜212, 212_1, 212_K, 212_N～Micro prism
212T、212_NT～顶面212T, 212_NT～top surface
212B、212_NB～底面212B, 212_NB～Bottom
213～透镜遮光层213～Lens shading layer
300～显示器300～Display
300B～下表面300B～lower surface
400～框架400～Frame
410～容置槽410～accommodating tank
420～底部420 ~ bottom
500～电池500～Battery
600、600’～光学感测***600, 600’～Optical Sensing System
610～底座610～Base
900～光学滤波板900～Optical filter board
1300光学感测器模块1300 optical sensor module
1301～承载板1301～Carrier board
1302～软性电路板1302～flexible circuit board
1303～焊线1303～Welding wire
1305～框体1305～Frame
1306～封胶层1306～Sealant layer
A1～第一孔径A1～The first aperture
A2～第二孔径A2～The second aperture
ANG_1、ANG_N～收光方位角ANG_1, ANG_N～Azimuth of receiving light
ANG_212_N～倾斜角ANG_212_N～Inclination angle
ANGX_1、ANGX_K、ANGX_N～偏离方位角ANGX_1, ANGX_K, ANGX_N ~ deviation from azimuth
CR～待测物面积CR～Area of object to be measured
d～距离d～distance
F～目标物F～Target
G～间隙G～Gap
L1～杂散光L1～Stray light
L2～杂散光L2～Stray light
L_1、L_K、L_N～目标入射光L_1, L_K, L_N ~ target incident light
LX_1、LX_K、LX_N～非目标入射光LX_1, LX_K, LX_N～non-target incident light
NORM～光学感测器的法线NORM～The normal of the optical sensor
SR～感测像素的阵列的面积SR～The area of the array of sensing pixels
TA_1、TA_I、TA_J、TA_K、TA_N：光能量传导轴TA_1, TA_I, TA_J, TA_K, TA_N: light energy transmission axis
θ～夹角θ～Included angle
具体实施方式detailed description
以下所公开的不同实施例可能重复使用相同的参考符号及/或标记。这些重复是为了简化与清晰的目的，并非用以限定所讨论的不同实施例及/或结构之间有特定的关系。The different embodiments disclosed below may use the same reference symbols and/or marks repeatedly. These repetitions are for the purpose of simplification and clarity, and are not used to limit the specific relationship between the different embodiments and/or structures discussed.
在本公开的一些实施例中，可通过光学感测器中的遮光层及光导向元件等部件，使感测像素接收来自特定入射角范围的光，消除不必要的杂散光，并可有效缩小光学感测器的厚度。因此，可使本公开实施例的光学感测器能轻易地设置于手机等行动电子装置的电池与显示器之间，更可利用显示器的光源实现屏幕下光学感测。In some embodiments of the present disclosure, the light shielding layer and light guide element in the optical sensor can be used to make the sensing pixel receive light from a specific incident angle range, eliminate unnecessary stray light, and effectively reduce The thickness of the optical sensor. Therefore, the optical sensor of the embodiment of the present disclosure can be easily installed between the battery and the display of a mobile electronic device such as a mobile phone, and the light source of the display can be used to realize under-screen optical sensing.
图1至图4是一系列的剖面图，其绘示根据本公开一实施例的光学感测器200的制造方法。要特别注意的是，为了清楚说明本公开实施例的特征，图1至图4中可能省略部分元件。1 to 4 are a series of cross-sectional views, which illustrate a method of manufacturing the optical sensor 200 according to an embodiment of the present disclosure. It should be particularly noted that, in order to clearly illustrate the features of the embodiments of the present disclosure, some elements may be omitted in FIGS. 1 to 4.
参照图1，首先，提供一基板201，基板201可具有多个感测像素(sensor pixel)203。在一些实施例中，基板201可为半导体基板，例如硅基板。此外，在一些实施例中，前述半导体基板亦可包含元素半导体(elemental semiconductor)，例如：锗(germanium)；化合物半导体(compound semiconductor)，例如：氮化镓(gallium nitride)、碳化硅(silicon  carbide)、砷化镓(gallium arsenide)、磷化镓(gallium phosphide)、磷化铟(indium phosphide)、砷化铟(indium arsenide)及/或锑化铟(indium antimonide)；合金半导体(alloy semiconductor)，例如：硅锗合金(SiGe)、磷砷镓合金(GaAsP)、砷铝铟合金(AlInAs)、砷铝镓合金(AlGaAs)、砷铟镓合金(GaInAs)、磷铟镓合金(GaInP)及/或磷砷铟镓合金(GaInAsP)或前述材料的组合。1, first, a substrate 201 is provided. The substrate 201 may have a plurality of sensor pixels 203. In some embodiments, the substrate 201 may be a semiconductor substrate, such as a silicon substrate. In addition, in some embodiments, the aforementioned semiconductor substrate may also include elemental semiconductors, such as germanium; compound semiconductors, such as gallium nitride and silicon carbide. ), gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; alloy semiconductor (alloy semiconductor) , Such as: silicon germanium alloy (SiGe), phosphorous gallium arsenic alloy (GaAsP), aluminum arsenic aluminum indium alloy (AlInAs), aluminum gallium arsenic alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), gallium indium phosphate alloy (GaInP) / Or indium gallium arsenide alloy (GaInAsP) or a combination of the foregoing materials.
在一些实施例中，基板201也可以是绝缘层上覆半导体(semiconductor on insulator)基板，前述绝缘层上覆半导体基板可包含底板、设置于底板上的埋藏氧化层及设置于埋藏氧化层上的半导体层。此外，基板201的导电类型可为n型或p型。In some embodiments, the substrate 201 may also be a semiconductor on insulator substrate. The semiconductor on insulator substrate may include a bottom plate, a buried oxide layer disposed on the bottom plate, and a semiconductor on the buried oxide layer. Semiconductor layer. In addition, the conductivity type of the substrate 201 may be n-type or p-type.
在一些实施例中，基板201可包含各种隔离部件(未示出)，用以定义主动区，并电性隔离基板201之中/之上的主动区元件。在一些实施例中，隔离部件包含浅沟槽隔离(shallow trench isolation,STI)部件、局部硅氧化(local oxidation of silicon,LOCOS)部件、其他合适的隔离部件或前述的组合。In some embodiments, the substrate 201 may include various isolation components (not shown) to define the active area and electrically isolate the active area elements in/on the substrate 201. In some embodiments, the isolation components include shallow trench isolation (STI) components, local oxidation of silicon (LOCOS) components, other suitable isolation components, or a combination of the foregoing.
在一些实施例中，基板201可包含各种以如离子布植及/或扩散工艺所形成的p型掺杂区及/或n型掺杂区(未示出)。在一些实施例中，掺杂区可形成电晶体、光电二极体(photodiode)等元件。此外，基板201亦可包含各种主动元件、无源元件以及各种导电部件(例如，导电垫、导线或导孔)。In some embodiments, the substrate 201 may include various p-type doped regions and/or n-type doped regions (not shown) formed by processes such as ion implantation and/or diffusion. In some embodiments, the doped regions can form elements such as transistors and photodiodes. In addition, the substrate 201 may also include various active components, passive components, and various conductive components (for example, conductive pads, wires, or vias).
在一些实施例中，感测像素203可与信号处理电路(signal processing circuitry)(未示出)连接。在一些实施例中，感测像素203的数量取决于光学感测区的面积(如图4所示的光学感测区的面积SR)的大小。每个感测像素203可包含一或多个光检测器(photodetector)。在一些实施例中，光检测器可包含光电二极体。光电二极体可包含p型半导体层、本质层(intrinsic layer)、以及n型半导体层的三层结构的光电材料(photoelectric material)。本质层可吸收光以产生出激子(exciton)，并且激子会在p型半导体层及n型半导体层的接面分成电子与电洞，进而产生电流信号。在一些实施例中，光检测器可为CMOS影像感测器，例如前照式(front-side illumination,FSI)CMOS影像感测器或背照式(back-side illumination,BSI)CMOS影像感测器。在一些其他实施例中，光检测器也可包含电荷耦合元件(charged coupling device,CCD)感测器、主动感测器、被动感测器、其他适合的感测器或前述的组合。在一些实施例中，感测像素203可通过光检测器将接收到的光信号转换成电信号，并通过信号处理电路处理前述电信号。In some embodiments, the sensing pixel 203 may be connected to a signal processing circuit (not shown). In some embodiments, the number of sensing pixels 203 depends on the size of the area of the optical sensing area (the area SR of the optical sensing area as shown in FIG. 4). Each sensing pixel 203 may include one or more photodetectors. In some embodiments, the light detector may include a photodiode. The photodiode may include a photoelectric material with a three-layer structure of a p-type semiconductor layer, an intrinsic layer, and an n-type semiconductor layer. The intrinsic layer can absorb light to generate excitons, and the excitons are divided into electrons and holes at the junction of the p-type semiconductor layer and the n-type semiconductor layer to generate a current signal. In some embodiments, the light detector may be a CMOS image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-side illumination (BSI) CMOS image sensor Device. In some other embodiments, the photodetector may also include a charged coupling device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing. In some embodiments, the sensing pixel 203 can convert the received light signal into an electrical signal through a photodetector, and process the aforementioned electrical signal through a signal processing circuit.
在一些实施例中，感测像素203可为阵列排列，从而形成感测像素阵列，但本公开实施例并非以此为限。在本公开的附图中所示的剖面图仅示出感测像素203的阵列 的其中一列，并位于基板201的上表面的下方。应注意的是，在所有实施例的附图中所示的感测像素203的数量与排列方式仅为示例性的，本公开实施例并非以此为限。感测像素203可为任意行列数目的阵列或其他的排列方式。In some embodiments, the sensing pixels 203 may be arranged in an array to form a sensing pixel array, but the embodiments of the present disclosure are not limited thereto. The cross-sectional view shown in the drawings of the present disclosure only shows one column of the array of sensing pixels 203, and is located below the upper surface of the substrate 201. It should be noted that the number and arrangement of the sensing pixels 203 shown in the drawings of all the embodiments are only exemplary, and the embodiments of the present disclosure are not limited thereto. The sensing pixels 203 can be an array with any number of rows and columns or other arrangements.
参照图2，在基板201上形成一介电层202。如图2所示，介电层202可覆盖感测像素203。在一些实施例中，介电层202的材料可包含透明光阻、聚亚酰胺、环氧树脂、其他适当的材料或前述材料的组合，但本公开实施例并非以此为限。在一些实施例中，介电层202可包括光固化材料、热固化材料或前述的组合。举例而言，可使用旋转涂布工艺(spin-on coating process)将介电层202涂布于基板201与感测像素203之上，但本公开实施例并非以此为限。2, a dielectric layer 202 is formed on the substrate 201. As shown in FIG. 2, the dielectric layer 202 can cover the sensing pixel 203. In some embodiments, the material of the dielectric layer 202 may include transparent photoresist, polyimide, epoxy, other suitable materials, or a combination of the foregoing materials, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the dielectric layer 202 may include a photo-curable material, a heat-curable material, or a combination of the foregoing. For example, a spin-on coating process can be used to coat the dielectric layer 202 on the substrate 201 and the sensing pixels 203, but the embodiment of the present disclosure is not limited to this.
接着，在介电层202上形成一第一遮光层204。亦即，介电层202形成于基板201与第一遮光层204之间，但本公开实施例并非以此为限。在一些其他的实施例中，也可在基板201上直接形成第一遮光层204，而不包含介电层202。如图2所示，第一遮光层204可具有多个第一通孔(aperture)204A，且第一通孔204A可对应于感测像素203。第一遮光层204可包含遮光材料，其对于在1200nm波长范围以下的光的穿透率小于1％以下，但本公开实施例并非以此为限。Next, a first light shielding layer 204 is formed on the dielectric layer 202. That is, the dielectric layer 202 is formed between the substrate 201 and the first light shielding layer 204, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the first light shielding layer 204 may also be directly formed on the substrate 201 without including the dielectric layer 202. As shown in FIG. 2, the first light shielding layer 204 may have a plurality of first apertures 204A, and the first apertures 204A may correspond to the sensing pixels 203. The first light-shielding layer 204 may include a light-shielding material, which has a transmittance of less than 1% for light below the 1200 nm wavelength range, but the embodiment of the present disclosure is not limited thereto.
在一些实施例中，第一遮光层204可包含金属材料，例如钨(W)、铬(Cr)、铝(Al)或钛(Ti)等，但本公开实施例并非以此为限。在此实施例中，可通过例如化学气相沉积(chemical vapor deposition,CVD)、物理气相沉积(physical vapor deposition,PVD)(例如：真空蒸镀(vacuum evaporation)、溅镀(sputtering)、脉冲激光沉积(pulsed laser deposition,PLD))、原子层沉积(atomic layer deposition,ALD)、其他适合的沉积或前述的组合，将第一遮光层204形成于基板201上。在一些实施例中，第一遮光层204可包含具有遮光特性的高分子材料，例如环氧树脂、聚酰亚胺等。在此实施例中，可通过例如旋转涂布法(spin-coating)、化学气相沉积法(CVD)、其他适当的方法或上述的组合，将第一遮光层204形成于基板201上。通过前述方法所形成的第一遮光层204的厚度在约0.3μm至约5μm的范围，例如可为2μm。在一些实施例中，第一遮光层204的厚度取决于第一遮光层204的材料的遮光能力。举例来说，第一遮光层204所包含的遮光材料的遮光能力可与其厚度呈负相关。In some embodiments, the first light-shielding layer 204 may include a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti), but the embodiment of the present disclosure is not limited thereto. In this embodiment, for example, chemical vapor deposition (chemical vapor deposition, CVD), physical vapor deposition (physical vapor deposition, PVD) (such as: vacuum evaporation (vacuum evaporation), sputtering (sputtering), pulsed laser deposition) The first light-shielding layer 204 is formed on the substrate 201 (pulsed laser deposition, PLD), atomic layer deposition (ALD), other suitable deposition, or a combination of the foregoing. In some embodiments, the first light-shielding layer 204 may include a polymer material with light-shielding properties, such as epoxy resin, polyimide, and the like. In this embodiment, the first light shielding layer 204 may be formed on the substrate 201 by, for example, spin-coating, chemical vapor deposition (CVD), other appropriate methods, or a combination of the above. The thickness of the first light shielding layer 204 formed by the foregoing method is in the range of about 0.3 μm to about 5 μm, and may be, for example, 2 μm. In some embodiments, the thickness of the first light-shielding layer 204 depends on the light-shielding ability of the material of the first light-shielding layer 204. For example, the light-shielding ability of the light-shielding material included in the first light-shielding layer 204 may have a negative correlation with its thickness.
接着，可对第一遮光层204执行图案化工艺，以形成具有第一孔径A1的多个第一通孔204A。前述的图案化工艺可包含光刻工艺与蚀刻工艺。光刻工艺可包含光刻胶涂布(例如旋转涂布)、软烘烤、曝光图案、曝光后烘烤、光刻胶显影、清洗及干燥(例 如硬烘烤)、其他适当的工艺或前述的组合。蚀刻工艺可包含湿式蚀刻工艺、干式蚀刻工艺(例如反应离子蚀刻(reactive ion etching,RIE))、等离子体蚀刻、离子研磨)、其他适合的工艺或前述的组合。通过前述方法所形成的第一通孔204A的第一孔径A1在约0.3μm至约50μm的范围，例如可为约4μm至约5μm，但本公开实施例并非以此为限。Next, a patterning process may be performed on the first light shielding layer 204 to form a plurality of first through holes 204A having a first aperture A1. The aforementioned patterning process may include a photolithography process and an etching process. The photolithography process can include photoresist coating (such as spin coating), soft baking, exposure patterning, post-exposure baking, photoresist development, cleaning and drying (such as hard baking), other appropriate processes or the foregoing The combination. The etching process may include a wet etching process, a dry etching process (such as reactive ion etching (RIE), plasma etching, ion milling), other suitable processes, or a combination of the foregoing. The first aperture A1 of the first through hole 204A formed by the foregoing method is in the range of about 0.3 μm to about 50 μm, for example, about 4 μm to about 5 μm, but the embodiment of the present disclosure is not limited thereto.
应注意的是，在图2中所示的第一通孔204A与感测像素203是以一对一的方式对应设置。然而，在本公开的其他实施例中，第一通孔204A与感测像素203亦可以一对多或多对一的方式对应设置。举例来说，一个第一通孔204A可露出两个以上的感测像素203，或者一个感测像素203可从两个以上的第一通孔204A露出。图2仅示出示例性的设置方式，本公开实施例并非以此为限。根据本公开的一些实施例，通过控制图案化第一遮光层204的第一孔径A1，可调整入射光的视角(field of view,FOV)范围。It should be noted that the first through holes 204A and the sensing pixels 203 shown in FIG. 2 are correspondingly arranged in a one-to-one manner. However, in other embodiments of the present disclosure, the first through holes 204A and the sensing pixels 203 can also be correspondingly arranged in a one-to-many or many-to-one manner. For example, one first through hole 204A may expose more than two sensing pixels 203, or one sensing pixel 203 may be exposed from more than two first through holes 204A. FIG. 2 only shows an exemplary setting manner, and the embodiment of the present disclosure is not limited thereto. According to some embodiments of the present disclosure, by controlling the first aperture A1 of the patterned first light shielding layer 204, the field of view (FOV) range of incident light can be adjusted.
参照图3，在第一遮光层204上依序形成一保护层205及一光学滤波层206。在一些实施例中，保护层205可作为积体电路的保护层，且保护层205的材料可包含氧化硅、氮化硅、其他合适的材料或前述的组合，但本公开实施例并非以此为限。在一些实施例中，例如在第一遮光层204的材料包含具有遮光特性的高分子材料的状况下，也可不形成此保护层205。在一些实施例中，光学滤波层206可为红外线滤光层(infrared cut filter,ICF)。可见光(visible light)对于此红外线滤光层具有高穿透率(transmittance)，而红外光对于此红外线滤光层则具有高反射率(reflectivity)，可以减少例如来自太阳光的红外线干扰。3, a protective layer 205 and an optical filter layer 206 are sequentially formed on the first light shielding layer 204. In some embodiments, the protective layer 205 can be used as a protective layer for the integrated circuit, and the material of the protective layer 205 can include silicon oxide, silicon nitride, other suitable materials, or a combination of the foregoing, but the embodiments of the present disclosure are not based on this Is limited. In some embodiments, for example, when the material of the first light-shielding layer 204 includes a polymer material with light-shielding properties, the protective layer 205 may not be formed. In some embodiments, the optical filter layer 206 may be an infrared cut filter (ICF). Visible light has high transmittance to the infrared filter layer, and infrared light has high reflectivity to the infrared filter layer, which can reduce the interference of infrared rays from sunlight, for example.
参照图4，在光学滤波层206之上形成一透明介质层207。亦即，光学滤波层206可形成于第一遮光层204与透明介质层207之间，但本公开并非以此为限。在一些其他的实施例中，透明介质层207也可直接形成于第一遮光层204上，而不设置光学滤波层206或将光学滤波层206以其他形式设置。举例来说，光学滤波层206可以一独立的光学滤波板的形式，设置于透明介质层207之上(类似于后方图8所示的结构)。4, a transparent medium layer 207 is formed on the optical filter layer 206. That is, the optical filter layer 206 may be formed between the first light shielding layer 204 and the transparent medium layer 207, but the present disclosure is not limited to this. In some other embodiments, the transparent medium layer 207 can also be directly formed on the first light-shielding layer 204 without the optical filter layer 206 or the optical filter layer 206 in other forms. For example, the optical filter layer 206 may be in the form of an independent optical filter plate, which is disposed on the transparent medium layer 207 (similar to the structure shown in FIG. 8 below).
在一些实施例中，透明介质层207可包含光固化材料(UV-curable material)、热固化材料(thermosetting material)或前述的组合。举例来说，透明介质层207可包含例如聚甲基丙烯酸甲酯(poly(methyl methacrylate),PMMA)、聚对苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)聚碳酸酯(polycarbonate,PC)、全氟环丁基(perfluorocyclobutyl,PFCB)聚合物、聚亚酰 胺(polyimide,PI)、亚克力树酯、环氧树脂(epoxy resins)、聚丙烯(polypropylene,PP)、聚乙烯(polyethylene,PE)、聚苯乙烯(polystyrene,PS)、聚氯乙烯(polyvinyl chloride,PVC)、其他适当的材料或前述的组合，但本公开实施例并非以此为限。In some embodiments, the transparent medium layer 207 may include a UV-curable material, a thermosetting material, or a combination of the foregoing. For example, the transparent medium layer 207 may include, for example, poly(methylmethacrylate) (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (polyethylene naphthalate, PEN) polycarbonate (PC), perfluorocyclobutyl (PFCB) polymer, polyimide (PI), acrylic resin, epoxy resin (epoxy resin), poly Polypropylene (PP), polyethylene (PE), polystyrene (PS), polyvinyl chloride (PVC), other suitable materials or a combination of the foregoing, but the embodiments of the present disclosure are not based on This is limited.
在一些实施例中，可以旋转涂布(spin-coating)、干膜(dry film)工艺、铸模(casting)、棒状涂布(bar coating)、刮刀涂布(blade coating)、滚筒涂布(roller coating)、线棒涂布(wire bar coating)、浸渍涂布(dip coating)、化学气相沉积法(CVD)或其他适合的方法，将透明介质层207形成于第一遮光层204上，但本公开实施例并非以此为限。在一些实施例中，通过前述工艺所形成的透明介质层207的厚度在约1μm至约100μm的范围，例如可为10μm至50μm。根据本公开的一些实施例，通过前述工艺所形成的透明介质层207可具有高良率及良好的品质。此外，通过控制透明介质层207的厚度可增加或减少光线经过后续形成的光导向元件(210)后偏移的距离，进而提升感测像素203的阵列所能接收的入射光角度的精准度。In some embodiments, spin-coating, dry film, casting, bar coating, blade coating, and roller coating can be used. coating), wire bar coating, dip coating, chemical vapor deposition (CVD) or other suitable methods, the transparent dielectric layer 207 is formed on the first light-shielding layer 204, but the original The disclosed embodiments are not limited to this. In some embodiments, the thickness of the transparent medium layer 207 formed by the foregoing process is in the range of about 1 μm to about 100 μm, and may be, for example, 10 μm to 50 μm. According to some embodiments of the present disclosure, the transparent medium layer 207 formed by the foregoing process may have high yield and good quality. In addition, by controlling the thickness of the transparent medium layer 207, the offset distance of the light after passing through the light guide element (210) formed later can be increased or decreased, thereby improving the accuracy of the incident light angle that the array of sensing pixels 203 can receive.
如图4所示，在透明介质层207中形成多个微棱镜212并在透明介质层207上形成多个微透镜211，举例来说，可在微棱镜212之上形成微透镜211。在一些实施例中，微透镜211与微棱镜212可对应于感测像素203。具体而言，每个微棱镜212对应于第一遮光层204的多个第一通孔204A的其中之一，而微棱镜212可连接(直接接触)于微透镜211，但本公开实施例并非以此为限。在一些其他的实施例中，微透镜211与微棱镜212也可彼此分离，即微透镜211与微棱镜212可间隔一距离。As shown in FIG. 4, a plurality of microprisms 212 are formed in the transparent medium layer 207 and a plurality of microlenses 211 are formed on the transparent medium layer 207. For example, the microlenses 211 may be formed on the microprisms 212. In some embodiments, the micro lens 211 and the micro prism 212 may correspond to the sensing pixel 203. Specifically, each microprism 212 corresponds to one of the plurality of first through holes 204A of the first light shielding layer 204, and the microprism 212 can be connected (directly contacted) with the microlens 211, but the embodiment of the present disclosure is not Limit this. In some other embodiments, the micro lens 211 and the micro prism 212 may also be separated from each other, that is, the micro lens 211 and the micro prism 212 may be separated by a distance.
在一些实施例中，透明介质层207、微透镜211及微棱镜212可以是同质材料或异质材料，可依据实际需求而选择合适的材料组合。举例来说，可使用灰阶光罩在透明介质层207进行曝光、显影、蚀刻成形等工艺后填入合适的材料，以形成微棱镜212。In some embodiments, the transparent medium layer 207, the micro lens 211, and the micro prism 212 may be homogeneous materials or heterogeneous materials, and a suitable combination of materials may be selected according to actual requirements. For example, a gray-scale mask can be used to fill the transparent medium layer 207 with suitable materials after exposure, development, and etching to form the transparent medium layer 207 to form the microprisms 212.
在一些实施例中，可通过高温回焊(reflow)将一高分子材料的厚膜形成于透明介质层207上，并通过其内聚力形成半球结构，以形成微透镜211，但本公开实施例并非以此为限。在一些实施例中，透明介质层207、微透镜211及微棱镜212也可包含介电材料，例如玻璃等，其可进一步提高透光性，但本公开实施例并非以此为限。在这些实施例中，可在光刻工艺的干燥(例如硬烘烤)步骤中，利用表面张力的效果来形成半球状的微透镜211，并可通过控制加热的温度来调整所需要的微透镜211的曲率半径。在一些实施例中，微透镜211的厚度在约1μm至约50μm之间的范围。应注意的是，微透镜211的轮廓并不以半球状为限，本公开实施例亦可根据所需要的入射光角度调整微透镜211的轮廓，例如可为非球面状(aspheric)。In some embodiments, a thick film of polymer material can be formed on the transparent medium layer 207 by high-temperature reflow, and a hemispherical structure is formed by its cohesive force to form the microlens 211, but the embodiment of the present disclosure is not Limit this. In some embodiments, the transparent medium layer 207, the micro lens 211, and the micro prism 212 may also include a dielectric material, such as glass, which can further improve the light transmittance, but the embodiment of the present disclosure is not limited thereto. In these embodiments, in the drying (such as hard baking) step of the photolithography process, the effect of surface tension can be used to form the hemispherical microlens 211, and the required microlens can be adjusted by controlling the heating temperature. 211 radius of curvature. In some embodiments, the thickness of the microlens 211 ranges from about 1 μm to about 50 μm. It should be noted that the profile of the microlens 211 is not limited to a hemispherical shape. The embodiments of the present disclosure can also adjust the profile of the microlens 211 according to the required incident light angle, for example, it may be aspheric.
在本公开实施例中，微透镜211与微棱镜212可视为一光导向元件210，光导向元件210可排列成阵列，但本公开实施例并非以此为限。亦即，光导向元件210与感测像素203可以一对一、一对多或多对一方式对应设置，但本公开实施例并非以此为限。在形成光导向元件210后，即完成本公开实施例的光学感测器200。在一些其他实施例中，光学感测器200的光学滤波层206可以一独立的光学滤波板的形式，设置于光导向元件210之上(类似于后方图8所示的结构)，但本公开实施例并非以此为限。In the embodiment of the present disclosure, the microlens 211 and the microprism 212 can be regarded as a light guiding element 210, and the light guiding element 210 may be arranged in an array, but the embodiment of the present disclosure is not limited to this. That is, the light guide element 210 and the sensing pixel 203 can be correspondingly arranged in a one-to-one, one-to-many or many-to-one manner, but the embodiment of the present disclosure is not limited to this. After the light guide element 210 is formed, the optical sensor 200 of the embodiment of the present disclosure is completed. In some other embodiments, the optical filter layer 206 of the optical sensor 200 may be in the form of an independent optical filter plate, which is disposed on the light guide element 210 (similar to the structure shown in FIG. 8 ), but the present disclosure The embodiment is not limited to this.
如图4所示，在本公开的一些实施例中，微棱镜212可具有一顶面212T与一底面212B，且顶面212T与底面212B可形成一夹角θ。在一些实施例中，顶面212T与底面212B所形成的夹角θ为可变的(variable)，其可依据微棱镜212设置的位置调整。此外，如图4所示，在这些光导向元件212中，越靠近光学感测器200中央的微棱镜212，其顶面212T与底面212B所形成的夹角θ越小，但本公开实施例并非以此为限。As shown in FIG. 4, in some embodiments of the present disclosure, the microprism 212 may have a top surface 212T and a bottom surface 212B, and the top surface 212T and the bottom surface 212B may form an included angle θ. In some embodiments, the angle θ formed by the top surface 212T and the bottom surface 212B is variable, which can be adjusted according to the position of the microprism 212. In addition, as shown in FIG. 4, among the light guide elements 212, the closer the microprism 212 at the center of the optical sensor 200 is, the smaller the angle θ formed by the top surface 212T and the bottom surface 212B of the microprism 212, but the embodiment of the present disclosure Not limited to this.
由于各光导向元件随其设置的位置而有所不同，为便于说明，将以210_N代表各光导向元件，以TA_N代表各光导向元件的光能量传导轴，以ANG_N代表各光导向元件的收光方位角，以L_N代表各光导向元件的平行的目标入射光，以LX_N代表各光导向元件的平行的非目标入射光，以ANGX_N代表各光导向元件的平行的非目标入射光相对于其光能传导轴TA_N的偏离方位角。其中，“_N”为各光能量导向元件的数字编号。Since each light guide element is different depending on where it is set up, for ease of description, 210_N will represent each light guide element, TA_N will represent the light energy transmission axis of each light guide element, and ANG_N will represent the collection of each light guide element. The light azimuth angle, L_N represents the parallel target incident light of each light guiding element, LX_N represents the parallel non-target incident light of each light guiding element, and ANGX_N represents the parallel non-target incident light of each light guiding element relative to it. The deviation azimuth of the light energy transmission axis TA_N. Among them, "_N" is the digital number of each light energy guiding element.
图5是图4所示的光学感测器200的部分放大图。参照图5，光导向元件210_N可包含一微透镜211_N与一微棱镜212_N，微透镜211_N可用于会聚光线，而微棱镜212_N可用于偏折光线。微棱镜212_N的底面212_NB(或称为倾斜面)与垂直于光学感测器200的法线NORM的平面之间具有一倾斜角ANG_212_N(或微棱镜212_N的顶面212_NT与底面212_NB所形成的夹角)，其可使微透镜211_N会聚后的入射光入射至此底面212_NB时发生偏折。FIG. 5 is a partially enlarged view of the optical sensor 200 shown in FIG. 4. 5, the light guiding element 210_N may include a microlens 211_N and a microprism 212_N. The microlens 211_N may be used for condensing light, and the microprism 212_N may be used for deflecting light. There is an inclination angle ANG_212_N between the bottom surface 212_NB (or called the inclined surface) of the microprism 212_N and the plane perpendicular to the normal NORM of the optical sensor 200 (or the clamp formed by the top surface 212_NT of the microprism 212_N and the bottom surface 212_NB). Angle), which can cause the incident light condensed by the microlens 211_N to be deflected when incident on the bottom surface 212_NB.
如图5所示，光导向元件210_N可具有一光能量传导轴TA_N，光能量传导轴TA_N所对应的一收光方位角ANG_N是光学感测器200的法线NORM与光能量传导轴TA_N在微透镜211_N交界处朝向目标物所张的方位角。若入射光沿着此光能量传导轴TA_N传输，则光导向元件210_N可导引入射光最后正向入射至对应的感测像素203。因此，前述多个平行的目标入射光，即为平行各光能量传导轴TA_N而入射至微透镜211_N的入射光L_N；而前述多个平行的非目标入射光，即不平行各光能量传导轴TA_N而入射至微透镜211_N的入射光LX_N。此外，非目标入射光LX_N与各 光能量传导轴TA_N具有一偏离方位角ANGX_N。As shown in FIG. 5, the light guiding element 210_N may have a light energy transmission axis TA_N, and a light receiving azimuth ANG_N corresponding to the light energy transmission axis TA_N is the normal line NORM of the optical sensor 200 and the light energy transmission axis TA_N. The azimuth angle of the junction of the microlens 211_N toward the target. If the incident light propagates along the light energy transmission axis TA_N, the light guiding element 210_N can guide the incident light and finally enter the corresponding sensing pixel 203 in a normal direction. Therefore, the aforementioned multiple parallel target incident lights are incident lights L_N parallel to the light energy transmission axes TA_N and incident on the microlens 211_N; and the aforementioned multiple parallel non-target incident lights are not parallel to the light energy transmission axes The incident light LX_N that enters the microlens 211_N from TA_N. In addition, the non-target incident light LX_N and each light energy transmission axis TA_N have an off-azimuth angle ANGX_N.
在图5所示的实施例中，目标入射光L_N是沿着光能量传导轴TA_N行进(即与光能量传导轴TA_N平行)，但本公开实施例并非以此为限。在一些实施例中，可以通过光导向元件210_N被感测像素203接收到的目标入射光L_N与光能量传导轴TA_N的夹角的范围可介于-3.5度至3.5度之间、-4度至+4度之间或-5度至+5度之间；偏离方位角ANGX_N可介于3.5度到90度之间、4度到90度之间或5度到90度之间。亦即，与光能量传导轴TA_N的夹角大于3.5度(或大于4度、或大于5度)的非目标入射光LX_N将无法入射至感测像素203。In the embodiment shown in FIG. 5, the target incident light L_N travels along the light energy transmission axis TA_N (that is, parallel to the light energy transmission axis TA_N), but the embodiment of the present disclosure is not limited to this. In some embodiments, the angle between the target incident light L_N and the light energy transmission axis TA_N that can be received by the sensing pixel 203 through the light guide element 210_N can range from -3.5 degrees to 3.5 degrees, -4 degrees To +4 degrees or -5 degrees to +5 degrees; the deviation azimuth angle ANGX_N can be between 3.5 degrees to 90 degrees, 4 degrees to 90 degrees, or 5 degrees to 90 degrees. That is, the non-target incident light LX_N whose included angle with the light energy transmission axis TA_N is greater than 3.5 degrees (or greater than 4 degrees, or greater than 5 degrees) will not be incident on the sensing pixel 203.
简单来说，光学感测器200的光导向元件210_N可将从外界进入光学感测器200的目标入射光L_N，通过透明介质层207而入射至感测像素203，并将从外界进入光学感测器200的非目标入射光LX_N入射于感测像素203的外部，藉此感测目标物的一影像。举例来说，目标入射光L_N可通过第一通孔204A而入射至感测像素203，非目标入射光LX_N则不会通过第一通孔204A(例如入射至第一遮光层204扣除第一通孔204A的其他区域)。To put it simply, the light guide element 210_N of the optical sensor 200 can enter the target incident light L_N of the optical sensor 200 from the outside through the transparent medium layer 207 and enter the sensing pixel 203, and enter the optical sensor from the outside. The non-target incident light LX_N of the sensor 200 is incident on the outside of the sensing pixel 203, thereby sensing an image of the target object. For example, the target incident light L_N may enter the sensing pixel 203 through the first through hole 204A, and the non-target incident light LX_N will not pass through the first through hole 204A (for example, enter the first light shielding layer 204 to subtract the first through hole 204A). Other areas of hole 204A).
本公开实施例的光学感测器200通过光导向元件210的透镜211、微棱镜212与第一光孔204A(及感测像素203)的相对位置(例如对准光能量传导轴)，可以控制特定入射光的角度(平行光能量传导轴)才能被感测像素203感测，因此可以有效提高光学感测器200的品质。相较于现有的光学感测器，本公开实施例的光学感测器可有效降低工艺成本及并简化制造流程。The optical sensor 200 of the embodiment of the present disclosure can control the relative position (for example, aligning the light energy transmission axis) between the lens 211 of the light guiding element 210, the microprism 212, and the first light hole 204A (and the sensing pixel 203) Only a specific angle of incident light (parallel to the light energy transmission axis) can be sensed by the sensing pixel 203, so the quality of the optical sensor 200 can be effectively improved. Compared with the existing optical sensor, the optical sensor of the embodiment of the present disclosure can effectively reduce the process cost and simplify the manufacturing process.
由于各光导向元件随其设置的位置而有所不同，各光导向元件的目标入射光与非目标入射光可能有所不同。举例来说，如图4所示，光导向元件210_1与光导向元件210_K分别具有不同的光能量传导轴TA_1与光能量传导轴TA_K。光导向元件210_1的目标入射光L_1与光导向元件210_K的目标入射光L_K虽然来自不同的收光方位角，但其分别经由光导向元件210_1与光导向元件210_K导向正面入射至对应的感测像素203。光导向元件210_1的非目标入射光LX_1与光导向元件210_K的非目标入射光LX_K分别具有偏离方位角ANGX_1与偏离方位角ANGX_K，其分别入射至光导向元件210_1与光导向元件210_K后，将无法进入对应的感测像素203。Since each light guide element is different depending on the position where it is installed, the target incident light and the non-target incident light of each light guide element may be different. For example, as shown in FIG. 4, the light guiding element 210_1 and the light guiding element 210_K have different light energy transmission axis TA_1 and light energy transmission axis TA_K, respectively. Although the target incident light L_1 of the light guiding element 210_1 and the target incident light L_K of the light guiding element 210_K come from different light receiving azimuths, they are directed to the corresponding sensing pixel through the light guiding element 210_1 and the light guiding element 210_K respectively. 203. The non-target incident light LX_1 of the light guiding element 210_1 and the non-target incident light LX_K of the light guiding element 210_K have an off-azimuth angle ANGX_1 and an off-azimuth angle ANGX_K respectively. Enter the corresponding sensing pixel 203.
如图4所示，在感测像素203所排列成的阵列中，由中心至***所对应的光导向元件210的光能量传导轴(例如，图4中的TA_1、TA_K、TA_I与TA_J)，可通过各光导向元件的微棱镜，将各光导向元件的收光方位角从0度偏移到可对应至预定的斜 向角度(例如，35度)。举例来说，可渐进式地改变入射斜向角度(光能量传导轴的收光方位角连续性变化)。如同图4所示，光学感测器200可以较小的感测像素203的阵列的面积SR，感测较大的待测物面积CR(例如指纹接触面积)，藉此增加感测的精准度并有效降低成本，但本公开实施例并非以此为限。As shown in FIG. 4, in the array of sensor pixels 203, the light energy transmission axis of the light guide element 210 corresponding from the center to the periphery (for example, TA_1, TA_K, TA_I, and TA_J in FIG. 4), The light-receiving azimuth angle of each light guiding element can be shifted from 0 degree to a predetermined oblique angle (for example, 35 degrees) by the microprism of each light guiding element. For example, the incident oblique angle can be gradually changed (continuous change of the light receiving azimuth angle of the light energy transmission axis). As shown in FIG. 4, the optical sensor 200 can sense a smaller area SR of the array of pixels 203 and a larger area CR of the object to be measured (such as a fingerprint contact area), thereby increasing the accuracy of sensing. And effectively reduce the cost, but the embodiment of the present disclosure is not limited to this.
图6绘示根据本公开另一实施例的光学感测器200-1的剖面图。与图4所示的光学感测器200的不同之处在于，光学感测器200-1可以较大的感测像素203的阵列的面积SR，感测较小的待测物面积CR。可依据实际需求调整光导向元件210(微棱镜212)的位置，以达成不同的收光效果。FIG. 6 shows a cross-sectional view of an optical sensor 200-1 according to another embodiment of the present disclosure. The difference from the optical sensor 200 shown in FIG. 4 is that the optical sensor 200-1 can sense a larger area SR of the array of pixels 203 and a smaller area CR of the object to be measured. The position of the light guiding element 210 (microprism 212) can be adjusted according to actual needs to achieve different light collection effects.
图7绘示根据本公开一实施例的光学感测***600的剖面图。在一些实施例中，光学感测***600可例如是手机或平板电脑等电子设备，其可包含一框架400、一光学感测器200及一显示器300，但本公开实施例并非以此为限。FIG. 7 shows a cross-sectional view of an optical sensing system 600 according to an embodiment of the present disclosure. In some embodiments, the optical sensing system 600 may be, for example, an electronic device such as a mobile phone or a tablet computer, which may include a frame 400, an optical sensor 200, and a display 300, but the embodiments of the present disclosure are not limited to this .
参照图7，在一些实施例中，光学感测***600可进一步包含一底座610，底座610可例如为电子设备的外壳的一部分。电池500可设置于底座610上。框架400可设置于电池500的上方，并具有一容置槽410，但本公开实施例并非以此为限。在一些其他实施例中，框架400也可不具有容置槽410，可视实际需求而定。Referring to FIG. 7, in some embodiments, the optical sensing system 600 may further include a base 610, and the base 610 may be, for example, a part of the housing of an electronic device. The battery 500 can be disposed on the base 610. The frame 400 can be disposed above the battery 500 and has a receiving groove 410, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the frame 400 may not have the accommodating groove 410, depending on actual requirements.
光学感测器200可设置于框架400之上。如图7所示，光学感测器200可设置于框架400的容置槽410中，并位于容置槽410的一底部420上，用以感测一目标物F的影像。光学感测器200的结构可如前所述，在此不多加赘述。显示器300可设置于光学感测器200的上方，用于显示信息。目标物F可位于显示器300上或上方。在一些实施例中，光学感测器200可通过显示器300感测目标物F的影像，而电池500可供给电力至光学感测器200与显示器300，以维持电子设备的运作。The optical sensor 200 may be disposed on the frame 400. As shown in FIG. 7, the optical sensor 200 can be disposed in the receiving groove 410 of the frame 400 and located on a bottom 420 of the receiving groove 410 to sense an image of a target F. The structure of the optical sensor 200 can be as described above, and will not be repeated here. The display 300 can be arranged above the optical sensor 200 for displaying information. The target F can be located on or above the display 300. In some embodiments, the optical sensor 200 can sense the image of the target F through the display 300, and the battery 500 can supply power to the optical sensor 200 and the display 300 to maintain the operation of the electronic device.
在一些实施例中，容置槽410的底部420与显示器300之间的一距离d可介于0.1mm至0.5mm之间、0.2至0.5mm之间、0.3至0.5mm之间或0.4至0.5mm之间，但本公开实施例并非以此为限。在此，距离d可定义为容置槽410的底部420与显示器300在平行于框架400的法线方向的一方向ND的最短距离。In some embodiments, a distance d between the bottom 420 of the accommodating groove 410 and the display 300 may be between 0.1 mm and 0.5 mm, between 0.2 and 0.5 mm, between 0.3 and 0.5 mm, or between 0.4 and 0.5 mm. However, the embodiments of the present disclosure are not limited thereto. Here, the distance d may be defined as the shortest distance between the bottom 420 of the accommodating groove 410 and the display 300 in a direction ND parallel to the normal direction of the frame 400.
在一些实施例中，将光学感测器200应用于光学感测***600中，可使模块的整体高度或厚度低于0.5mm，达到薄型化的需求，因此可在不影响电池500的配置下，将光学感测器200设置于电子装置的屏幕(例如显示器300)下与电池之间。要特别注意的是，本公开实施例的光学感测器与应用其的光学感测***，并不受限于指纹辨识，其也可应用于例如静脉、血流速及血氧检测。或者，本公开实施例的光学感测器与应 用其的光学感测***可用以进行非接触的影像拍摄(例如屏幕下相机等)，以拍摄例如人脸(例如用于脸部辨识)或眼睛(例如用于虹膜辨识)或者执行一般的拍照功能。In some embodiments, the optical sensor 200 is applied to the optical sensing system 600, so that the overall height or thickness of the module can be less than 0.5mm, which can meet the requirements of thinning. Therefore, the configuration of the battery 500 can be reduced without affecting the configuration of the battery 500. , The optical sensor 200 is disposed under the screen (such as the display 300) of the electronic device and between the battery. It should be particularly noted that the optical sensor and the optical sensing system using the optical sensor in the embodiments of the present disclosure are not limited to fingerprint recognition, and can also be applied to, for example, vein, blood flow rate, and blood oxygen detection. Alternatively, the optical sensor of the embodiment of the present disclosure and the optical sensing system using it can be used for non-contact image shooting (such as an under-screen camera, etc.) to shoot, for example, human faces (for example, for facial recognition) or eyes. (For example for iris recognition) or perform general camera functions.
在一些实施例中，显示器300可包含有机发光二极体(organic light-emitting diode,OLED)显示器或微型发光二极体(micro LED)显示器或者其他各种显示器。在一些实施例中，可利用光学感测***600中的显示器300作为光源，其发出的光线将照射与显示器300的上表面接触或非接触的目标物F，目标物F再将此光线反射至设置于显示器300下的光学感测器200，以对目标物F的轮廓特征(例如，手指的指纹特征)进行感测与识别。应注意的是，光学感测***600中的光学感测器200也可搭配其他形态及波长的光源(例如，红外线光源)，但本公开实施例并非以此为限。在一些实施例中，光学感测器也可以可进行被动式影像提取，即不需要投射光源至待测目标物(物体)F。In some embodiments, the display 300 may include an organic light-emitting diode (OLED) display or a micro LED display or various other displays. In some embodiments, the display 300 in the optical sensing system 600 can be used as a light source, and the light emitted by it will illuminate a target F that is in contact or non-contact with the upper surface of the display 300, and the target F reflects this light to The optical sensor 200 is arranged under the display 300 to sense and recognize the contour feature of the target F (for example, the fingerprint feature of a finger). It should be noted that the optical sensor 200 in the optical sensing system 600 can also be used with light sources of other shapes and wavelengths (for example, infrared light sources), but the embodiments of the present disclosure are not limited thereto. In some embodiments, the optical sensor can also perform passive image extraction, that is, there is no need to project a light source to the target (object) F to be measured.
如图7所示，在一些实施例中，光学感测器200可被设置为包含于一光学感测器模块1300中。举例来说，光学感测器模块1300可包含一承载板1301、一软性电路板1302及将光学感测器200与软性电路板1302电性连接的焊线(bond wire)1303，焊线1303可由封胶层1306所封装并保护。封胶层1306的顶面可与透明介质层207的顶面齐平，但本公开实施例并非以此为限。在一些实施例中，焊线1303的材料可包含铝(Al)、铜(Cu)、金(Au)、前述的合金、其他合适的导电材料或前述的组合，但本公开实施例并非以此为限。As shown in FIG. 7, in some embodiments, the optical sensor 200 may be configured to be included in an optical sensor module 1300. For example, the optical sensor module 1300 may include a carrier board 1301, a flexible circuit board 1302, and a bond wire 1303 that electrically connects the optical sensor 200 and the flexible circuit board 1302. 1303 can be encapsulated and protected by the sealant layer 1306. The top surface of the sealant layer 1306 may be flush with the top surface of the transparent medium layer 207, but the embodiment of the present disclosure is not limited to this. In some embodiments, the material of the bonding wire 1303 may include aluminum (Al), copper (Cu), gold (Au), the foregoing alloys, other suitable conductive materials, or a combination of the foregoing, but the embodiments of the present disclosure are not based on this Is limited.
图8绘示根据本公开另一实施例的光学感测***600’的剖面图。与图7所示的光学感测***600的不同之处在于，光学感测***600’以光学滤波板900来取代光学滤波层206。举例来说，光学滤波板900可为一独立的光学滤波板，可利用设置于软性电路板1302上的支撑体(dam structure)或框体1305承载光学滤波板900。亦即，光学滤波板900可通过光学感测器模块1300设置于微透镜210的上方。如图8所示，在本实施例中，透明介质层207设置于保护层250上。光学滤波板900设置于光导向元件210的上方，并对入射光进行光线波长过滤。其余与图7相同的部分在此不多加赘述。FIG. 8 shows a cross-sectional view of an optical sensing system 600' according to another embodiment of the present disclosure. The difference from the optical sensing system 600 shown in FIG. 7 is that the optical sensing system 600' uses an optical filter plate 900 instead of the optical filter layer 206. For example, the optical filter plate 900 can be an independent optical filter plate, and the dam structure or frame 1305 provided on the flexible circuit board 1302 can be used to carry the optical filter plate 900. That is, the optical filter plate 900 can be disposed above the micro lens 210 through the optical sensor module 1300. As shown in FIG. 8, in this embodiment, the transparent medium layer 207 is disposed on the protective layer 250. The optical filter plate 900 is disposed above the light guide element 210, and performs wavelength filtering of incident light. The rest of the parts that are the same as those in FIG. 7 will not be repeated here.
应注意的是，虽然图8所示的光学感测器模块1300与光学滤波板900是设置于框架400之上并与显示器300分离，但本公开实施例并非以此为限。在一些其他实施例中，光学感测器模块1300与光学滤波板900也可贴合于显示器300的下表面300B。It should be noted that although the optical sensor module 1300 and the optical filter plate 900 shown in FIG. 8 are disposed on the frame 400 and separated from the display 300, the embodiment of the present disclosure is not limited thereto. In some other embodiments, the optical sensor module 1300 and the optical filter plate 900 may also be attached to the lower surface 300B of the display 300.
图9绘示根据本公开一实施例的光学感测器200-2的剖面图。与图4所示的光学感测器200的不同之处在于，图9绘示的光学感测器200-2还包含一透镜遮光层213(可 视为第二遮光层)，透镜遮光层213设置于第一遮光层204之上。更详细来说，透镜遮光层213可设置于透明介质层207上，并位于微透镜211之间的多个间隙G中。透镜遮光层213可例如裸露微透镜211的(至少部分)曲面区域。换言之，透镜遮光层213可具有多个通孔(对应于间隙G)，且光导向元件210的微透镜211可设置于这些通孔中，但本公开实施例并非以此为限。FIG. 9 shows a cross-sectional view of an optical sensor 200-2 according to an embodiment of the present disclosure. The difference from the optical sensor 200 shown in FIG. 4 is that the optical sensor 200-2 shown in FIG. 9 further includes a lens shading layer 213 (can be regarded as a second shading layer), and the lens shading layer 213 It is arranged on the first light shielding layer 204. In more detail, the lens light shielding layer 213 may be disposed on the transparent medium layer 207 and located in the plurality of gaps G between the microlenses 211. The lens shading layer 213 may, for example, expose (at least part of) the curved area of the micro lens 211. In other words, the lens shading layer 213 may have a plurality of through holes (corresponding to the gap G), and the microlenses 211 of the light guide element 210 may be disposed in these through holes, but the embodiment of the present disclosure is not limited thereto.
在一些情况下，可能有光线(例如图9所示的杂散光L1)从微透镜211之间的空白区域(譬如间隙G所指的区域)入射，并通过第一通孔204A入射至感测像素203，因而造成干扰，降低影像品质。在图9所示的光学感测器200-2中，透镜遮光层213可阻挡前述杂散光L1入射至感测像素203，有效防止杂散光干扰，并提升影像品质。In some cases, light (such as stray light L1 shown in FIG. 9) may be incident from the blank area between the microlenses 211 (such as the area indicated by the gap G), and enter the sensor through the first through hole 204A. Pixels 203, therefore, cause interference and reduce image quality. In the optical sensor 200-2 shown in FIG. 9, the lens shading layer 213 can block the aforementioned stray light L1 from entering the sensing pixels 203, effectively preventing the interference of stray light, and improving the image quality.
图10绘示根据本公开另一实施例的光学感测器200-3的剖面图。与图4所示的光学感测器200的不同之处在于，图10绘示的光学感测器200-3还包含一第二遮光层208及一透明介质层209，第二遮光层208及透明介质层209皆设置于第一遮光层204之上。更详细来说，第二遮光层208位于透明介质层207上，透明介质层209位于第二遮光层208上，而光导向元件210位于透明介质层209上(例如，微透镜211设置于透明介质层209上，而微棱镜212设置于透明介质层209中)。FIG. 10 shows a cross-sectional view of an optical sensor 200-3 according to another embodiment of the present disclosure. The difference from the optical sensor 200 shown in FIG. 4 is that the optical sensor 200-3 shown in FIG. 10 further includes a second light-shielding layer 208 and a transparent medium layer 209, and the second light-shielding layer 208 and The transparent medium layer 209 is all disposed on the first light-shielding layer 204. In more detail, the second light-shielding layer 208 is located on the transparent medium layer 207, the transparent medium layer 209 is located on the second light-shielding layer 208, and the light guide element 210 is located on the transparent medium layer 209 (for example, the microlens 211 is located on the transparent medium layer). On the layer 209, and the microprism 212 is arranged in the transparent medium layer 209).
参照图10，第二遮光层208可具有多个第二通孔208A，第二通孔208A可对应于第一通孔204A，且每个第二通孔208A可具有第二孔径A2。在一些实施例中，第二通孔208A的第二孔径A2大于第一通孔204的第一孔径A1，但本公开实施例并非以此为限。在一些实施例中，第二遮光层208的厚度与第一遮光层204的厚度不同。举例来说，第二遮光层208的厚度可大于第一遮光层204的厚度，但本公开实施例并非以此为限。如图10所示，在一些实施例中，光导向元件210的微棱镜212设置于第二通孔208A中。举例来说，微棱镜212可完全或只有部分设置于第二通孔208A中，但本公开实施例并非以此为限。10, the second light shielding layer 208 may have a plurality of second through holes 208A, the second through holes 208A may correspond to the first through holes 204A, and each of the second through holes 208A may have a second aperture A2. In some embodiments, the second aperture A2 of the second through hole 208A is larger than the first aperture A1 of the first through hole 204, but the embodiment of the present disclosure is not limited thereto. In some embodiments, the thickness of the second light shielding layer 208 is different from the thickness of the first light shielding layer 204. For example, the thickness of the second light-shielding layer 208 may be greater than the thickness of the first light-shielding layer 204, but the embodiment of the present disclosure is not limited thereto. As shown in FIG. 10, in some embodiments, the microprism 212 of the light guiding element 210 is disposed in the second through hole 208A. For example, the microprism 212 may be completely or only partially disposed in the second through hole 208A, but the embodiment of the present disclosure is not limited thereto.
在一些情况下，相邻的光导向元件210之间(不限于最邻近的光导向元件210)可能会产生串扰(cross talk)。亦即，一目标光导向元件的相邻光导向元件的杂散光(例如图10所示的杂散光L2)可能会耦合进入目标光导向元件的目标入射光，一起通过第一通孔204A入射至与目标光导向元件对应的感测像素203，因而造成干扰，降低影像品质。在图10所示的光学感测器200-3中，第二遮光层208可遮蔽从外界进入此等相邻光导向元件的杂散光L2入射至感测像素203，有效防止杂散光干扰，并提升影像品质。In some cases, crosstalk may occur between adjacent light guiding elements 210 (not limited to the closest light guiding element 210). That is, the stray light (such as stray light L2 shown in FIG. 10) adjacent to the light guiding element of a target light guiding element may be coupled into the target incident light of the target light guiding element, and be incident to the target light guiding element through the first through hole 204A. The sensing pixels 203 corresponding to the target light guide element cause interference and reduce image quality. In the optical sensor 200-3 shown in FIG. 10, the second light shielding layer 208 can shield the stray light L2 entering the adjacent light guide elements from the outside from entering the sensing pixel 203, effectively preventing the interference of stray light, and Improve image quality.
在一些实施例中，可以图9所示的光学感测器200-2或图10所示的光学感测器200-3取代图4所示的光学感测器200设置于图7所示之光学感测***600(或图8所示的光学感测***600’)中，在此不多加赘述。In some embodiments, the optical sensor 200-2 shown in FIG. 9 or the optical sensor 200-3 shown in FIG. 10 may be substituted for the optical sensor 200 shown in FIG. In the optical sensing system 600 (or the optical sensing system 600' shown in FIG. 8), no further description will be given here.
综上所述，本公开的实施例通过光导向元件，可达成在不具备额外的遮光层的情况下，使得感测像素亦能接收来自特定范围的视角入射的光线，并可降低光学感测器的厚度。In summary, through the light guide element in the embodiments of the present disclosure, the sensing pixel can also receive light incident from a specific range of viewing angle without an additional light shielding layer, and the optical sensing can be reduced. The thickness of the device.
以上概述数个实施例的部件，以便在本公开所属技术领域中普通技术人员可以更理解本公开实施例的观点。在本公开所属技术领域中普通技术人员应该理解，他们能以本公开实施例为基础，设计或修改其他工艺和结构以达到与在此介绍的实施例相同的目的及/或优势。在本公开所属技术领域中普通技术人员也应该理解到，此类等效的结构并无悖离本公开的精神与范围，且他们能在不违背本公开的精神和范围之下，做各式各样的改变、取代和替换。因此，本公开的保护范围当视后附的权利要求所界定者为准。另外，虽然本公开已以数个较佳实施例公开如上，然其并非用以限定本公开。The components of several embodiments are summarized above, so that those of ordinary skill in the technical field to which the present disclosure belongs can better understand the viewpoints of the embodiments of the present disclosure. Those of ordinary skill in the technical field to which the present disclosure belongs should understand that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purpose and/or advantages as the embodiments described herein. Those of ordinary skill in the technical field to which the present disclosure belongs should also understand that such equivalent structures do not depart from the spirit and scope of the present disclosure, and they can do various things without departing from the spirit and scope of the present disclosure. Various changes, substitutions and replacements. Therefore, the protection scope of the present disclosure shall be subject to those defined by the appended claims. In addition, although the present disclosure has been disclosed as above in several preferred embodiments, it is not intended to limit the present disclosure.
整份说明书对特征、优点或类似语言的引用，并非意味可以利用本公开实现的所有特征和优点应该或者可以在本公开的任何单个实施例中实现。相对地，涉及特征和优点的语言被理解为其意味着结合实施例描述的特定特征、优点或特性包括在本公开的至少一个实施例中。因而，在整份说明书中对特征和优点以及类似语言的讨论可以但不一定代表相同的实施例。The quotation of features, advantages or similar language throughout the specification does not mean that all the features and advantages that can be realized with the present disclosure should or can be realized in any single embodiment of the present disclosure. In contrast, language related to features and advantages is understood as meaning that a particular feature, advantage, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present disclosure. Thus, the discussion of features and advantages and similar language throughout the specification may but does not necessarily represent the same embodiment.
再者，在一个或多个实施例中，可以任何合适的方式组合本公开的所描述的特征、优点和特性。根据本文的描述，相关领域的技术人员将意识到，可在没有特定实施例的一个或多个特定特征或优点的情况下实现本公开。在其他情况下，在某些实施例中可辨识附加的特征和优点，这些特征和优点可能不存在于本公开的所有实施例中。Furthermore, in one or more embodiments, the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will realize that the present disclosure can be implemented without one or more specific features or advantages of a specific embodiment. In other cases, additional features and advantages can be recognized in certain embodiments, and these features and advantages may not be present in all embodiments of the present disclosure.

Claims (21)

  1. 一种光学感测器，包括：An optical sensor, including:
    一基板，具有多个感测像素；A substrate with a plurality of sensing pixels;
    一第一遮光层，设置于该基板之上，并具有多个第一通孔，所述多个第一通孔对应于所述多个感测像素；A first light-shielding layer disposed on the substrate and having a plurality of first through holes, the plurality of first through holes corresponding to the plurality of sensing pixels;
    一透明介质层，设置于该第一遮光层之上；以及A transparent medium layer disposed on the first light-shielding layer; and
    多个光导向元件，其中所述多个光导向元件中的每一个包括：A plurality of light guiding elements, wherein each of the plurality of light guiding elements includes:
    一微棱镜，设置于该透明介质层中并对应于所述多个第一通孔的其中之一；及A micro prism disposed in the transparent medium layer and corresponding to one of the first through holes; and
    一微透镜，设置于该微棱镜之上。A micro lens is arranged on the micro prism.
  2. 如权利要求1所述的光学感测器，其中该微棱镜连接于该微透镜。The optical sensor of claim 1, wherein the microprism is connected to the microlens.
  3. 如权利要求1所述的光学感测器，其中该微棱镜具有一顶面与一底面，且该顶面与该底面形成一夹角。3. The optical sensor of claim 1, wherein the microprism has a top surface and a bottom surface, and the top surface and the bottom surface form an angle.
  4. 如权利要求3所述的光学感测器，其中该夹角为可变的。The optical sensor of claim 3, wherein the included angle is variable.
  5. 如权利要求4所述的光学感测器，其中在所述多个光导向元件中，越靠近该光学感测器中央的微棱镜的该夹角越小。4. The optical sensor of claim 4, wherein among the light guiding elements, the angle between the microprisms closer to the center of the optical sensor is smaller.
  6. 权利要求1所述的光学感测器，还包括：The optical sensor of claim 1, further comprising:
    一介电层，设置于该基板与该第一遮光层之间，并覆盖所述多个感测像素。A dielectric layer is arranged between the substrate and the first light-shielding layer and covers the plurality of sensing pixels.
  7. 如权利要求1所述的光学感测器，还包括：The optical sensor of claim 1, further comprising:
    一光学滤波层，设置于该第一遮光层与该透明介质层之间。An optical filter layer is arranged between the first light shielding layer and the transparent medium layer.
  8. 如权利要求1所述的光学感测器，还包括：The optical sensor of claim 1, further comprising:
    一光学滤波板，设置于所述多个光导向元件之上。An optical filter plate is arranged on the plurality of light guide elements.
  9. 如权利要求1所述的光学感测器，还包括：The optical sensor of claim 1, further comprising:
    至少一第二遮光层，设置于该第一遮光层之上，并具有多个第二通孔。At least one second light-shielding layer is disposed on the first light-shielding layer and has a plurality of second through holes.
  10. 如权利要求9所述的光学感测器，其中所述多个第二通孔中的每一个的孔径大于所述多个第一通孔中的每一个的孔径。9. The optical sensor of claim 9, wherein the aperture of each of the plurality of second through holes is larger than the aperture of each of the plurality of first through holes.
  11. 如权利要求9所述的光学感测器，其中该第二遮光层的厚度与该第一遮光层的厚度不同。9. The optical sensor of claim 9, wherein the thickness of the second light-shielding layer is different from the thickness of the first light-shielding layer.
  12. 如权利要求9所述的光学感测器，其中该第二遮光层设置于该透明介质层之 上，且所述多个光导向元件的微透镜设置于所述多个第二通孔中。9. The optical sensor of claim 9, wherein the second light shielding layer is disposed on the transparent medium layer, and the microlenses of the plurality of light guiding elements are disposed in the plurality of second through holes.
  13. 如权利要求9所述的光学感测器，其中该第二遮光层设置于该透明介质层中，且所述多个第二通孔对应于所述多个第一通孔。9. The optical sensor of claim 9, wherein the second light shielding layer is disposed in the transparent medium layer, and the plurality of second through holes correspond to the plurality of first through holes.
  14. 如权利要求13所述的光学感测器，其中在所述多个光导向元件中的部分微棱镜位于所述多个第二通孔中。The optical sensor of claim 13, wherein a part of the microprisms in the plurality of light guiding elements are located in the plurality of second through holes.
  15. 一种光学感测***，包括：An optical sensing system, including:
    一框架，具有一容置槽；A frame with a accommodating slot;
    如权利要求1～14中任一项所述的光学感测器，设置于该容置槽中；以及The optical sensor of any one of claims 1-14, which is disposed in the accommodating groove; and
    一显示器，设置于该光学感测器之上。A display is arranged on the optical sensor.
  16. 如权利要求15所述的光学感测***，其中该容置槽的底部与该显示器之间的距离介于0.1mm至0.5mm。15. The optical sensing system of claim 15, wherein the distance between the bottom of the accommodating groove and the display is between 0.1 mm and 0.5 mm.
  17. 一种光学感测器的制造方法，包括：A manufacturing method of an optical sensor includes:
    提供一基板，其中该基板具有多个感测像素；Providing a substrate, wherein the substrate has a plurality of sensing pixels;
    在该基板之上形成一第一遮光层，其中该第一遮光层具有多个第一通孔，且所述多个第一通孔对应于所述多个感测像素；Forming a first light shielding layer on the substrate, wherein the first light shielding layer has a plurality of first through holes, and the plurality of first through holes correspond to the plurality of sensing pixels;
    在该第一遮光层之上形成一透明介质层；Forming a transparent medium layer on the first light shielding layer;
    在该透明介质层中形成多个微棱镜，其中所述多个微棱镜对应于所述多个感测像素；以及Forming a plurality of microprisms in the transparent medium layer, wherein the plurality of microprisms correspond to the plurality of sensing pixels; and
    在所述多个微棱镜之上形成多个微透镜。A plurality of micro lenses are formed on the plurality of micro prisms.
  18. 如权利要求17所述的光学感测器的制造方法，还包括：The method of manufacturing an optical sensor according to claim 17, further comprising:
    在该基板与该第一遮光层之间形成一介电层，其中该介电层并覆盖所述多个感测像素。A dielectric layer is formed between the substrate and the first light shielding layer, wherein the dielectric layer covers the plurality of sensing pixels.
  19. 如权利要求17所述的光学感测器的制造方法，还包括：The method of manufacturing an optical sensor according to claim 17, further comprising:
    在该第一遮光层与该透明介质层之间形成一光学滤波层。An optical filter layer is formed between the first light shielding layer and the transparent medium layer.
  20. 如权利要求17所述的光学感测器的制造方法，还包括：The method of manufacturing an optical sensor according to claim 17, further comprising:
    在所述多个光导向元件之上形成一光学滤波板。An optical filter plate is formed on the plurality of light guiding elements.
  21. 如权利要求17所述的光学感测器的制造方法，还包含：The method of manufacturing an optical sensor according to claim 17, further comprising:
    在该第一遮光层之上形成至少一第二遮光层，其中该第二遮光层具有多个第二通孔。At least one second light-shielding layer is formed on the first light-shielding layer, wherein the second light-shielding layer has a plurality of second through holes.
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