CN211045440U

CN211045440U - Optical sensor and optical sensing system

Info

Publication number: CN211045440U
Application number: CN202020076482.XU
Authority: CN
Inventors: 郑裕国; 范成至
Original assignee: Egis Technology Inc
Current assignee: Egis Technology Inc
Priority date: 2019-09-12
Filing date: 2020-01-14
Publication date: 2020-07-17
Anticipated expiration: 2030-01-14
Also published as: TWI791938B; TWM595331U; TW202122981A; CN111129056A; WO2021047138A1

Abstract

The present disclosure provides an optical sensor and an optical sensing system, the optical sensor includes a substrate having a plurality of sensing pixels. The optical sensor also includes a first light-shielding layer disposed on the substrate and having a plurality of first through holes corresponding to the sensing pixels. The optical sensor further comprises a transparent medium layer, and the transparent medium layer is arranged on the first shading layer. The optical sensor includes a plurality of light directing elements. Each of the light directing elements includes a microprism and a microlens. The microprism is arranged in the transparent medium layer and corresponds to one of the first through holes. The micro lens is arranged on the micro prism.

Description

Optical sensor and optical sensing system

Technical Field

Embodiments of the present disclosure relate to an optical sensor and an optical sensing system using the same, and more particularly, to an optical sensor having an angle-controllable light (energy) guiding structure and an optical sensing system using the same.

Background

Today's mobile electronic devices (e.g., mobile phones, tablet computers, notebook computers, etc.) are usually equipped with biometric systems, such as fingerprint recognition, face recognition, iris recognition, etc., to secure personal data. Due to the popularization of mobile payment, biometric identification becomes a standard function.

Such optical imaging devices can partially transmit light through a screen (e.g., an organic light emitting diode (O L ED) screen) to extract an image of an object (e.g., a fingerprint image, which may be referred to as an under-screen fingerprint sensing (FOD)) pressed on the screen.

However, the module of the optical imaging device cannot be thinned due to its internal structure (for example, its thickness is at least 3mm), and in order to fit the habit of pressing the position by the user, the position of the module overlaps with a partial area of the mobile electronic device where the battery is disposed, and the size of the battery must be reduced to make room for disposing the optical imaging device, which may result in a decrease in the endurance of the mobile electronic device. In addition, with the development of technology, the power consumption of mobile electronic devices is becoming larger, and therefore, how to make optical imaging devices thinner without sacrificing battery space is an important point of efforts of various families.

SUMMERY OF THE UTILITY MODEL

The embodiment of the present disclosure provides an optical sensor having an angle-controllable optical energy guiding structure (light guiding element) and an optical sensing system using the same. In some embodiments, unnecessary stray light can be eliminated by the light guide element, and the thickness of the optical sensor can be effectively reduced.

Embodiments of the present disclosure include an optical sensor. The optical sensor includes a substrate having a plurality of sensing pixels. The optical sensor also includes a first light-shielding layer disposed on the substrate and having a plurality of first through holes corresponding to the sensing pixels. The optical sensor further comprises a transparent medium layer, and the transparent medium layer is arranged on the first shading layer. The optical sensor includes a plurality of light directing elements. Each of the light directing elements includes a microprism and a microlens. The microprism is arranged in the transparent medium layer and corresponds to one of the first through holes. The micro lens is arranged on the micro prism.

According to an embodiment of the present disclosure, the micro-prism is connected to the micro-lens.

According to one embodiment of the present disclosure, the micro-prism has a top surface and a bottom surface, and the top surface and the bottom surface form an included angle.

According to an embodiment of the present disclosure, the included angle is variable.

According to an embodiment of the present disclosure, in the plurality of light guide elements, the included angle of the micro-prism closer to the center of the optical sensor is smaller.

According to an embodiment of the present disclosure, the method further includes:

and the dielectric layer is arranged between the substrate and the first shading layer and covers the sensing pixels.

and the optical filtering layer is arranged between the first shading layer and the transparent medium layer.

and the optical filter plate is arranged on the plurality of light guide elements.

at least one second shading layer is arranged on the first shading layer and provided with a plurality of second through holes.

According to an embodiment of the present disclosure, an aperture of each of the plurality of second through holes is larger than an aperture of each of the plurality of first through holes.

According to an embodiment of the present disclosure, the thickness of the second light shielding layer is different from the thickness of the first light shielding layer.

According to an embodiment of the present disclosure, the second light shielding layer is disposed on the transparent dielectric layer, and the microlenses of the light guiding elements are disposed in the second through holes.

According to an embodiment of the present disclosure, the second light shielding layer is disposed in the transparent dielectric layer, and the plurality of second through holes correspond to the plurality of first through holes.

According to an embodiment of the present disclosure, a portion of the micro-prisms in the plurality of light directing elements are located in the plurality of second through holes.

Embodiments of the present disclosure include an optical sensing system. The optical sensing system comprises a frame, and the frame is provided with a containing groove. The optical sensing system also comprises the optical sensor, and the optical sensor is arranged in the accommodating groove. The optical sensing system further comprises a display, and the display is arranged on the optical sensor.

According to an embodiment of the present disclosure, a distance between the bottom of the accommodating groove and the display is between 0.1mm and 0.5 mm.

Drawings

The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the various features are not drawn to scale and are merely illustrative examples. In fact, the dimensions of the elements may be exaggerated or minimized to clearly illustrate the technical features of the embodiments of the present disclosure.

Fig. 1 to 4 are a series of cross-sectional views illustrating a method of manufacturing an optical sensor according to an embodiment of the present disclosure.

Fig. 5 is a partially enlarged view of the optical sensor shown in fig. 4.

FIG. 6 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.

FIG. 7 is a cross-sectional view of an optical sensing system according to an embodiment of the present disclosure.

FIG. 8 shows a cross-sectional view of an optical sensing system according to another embodiment of the present disclosure.

FIG. 9 is a cross-sectional view of an optical sensor according to an embodiment of the present disclosure.

FIG. 10 is a cross-sectional view of an optical sensor according to another embodiment of the present disclosure.

The reference numerals are explained below:

200. 200-1, 200-2, 200-3 optical sensors

201 to substrate

202 dielectric layer

203-sensing pixels

204 to the first light-shielding layer

204A-first via

205 protective layer

206-optical filter layer

207-transparent dielectric layer

208 to second light-shielding layer

208A-second through hole

209 transparent dielectric layer

210. 210_1, 210_ K, 210_ N-light directing element

211. 211_1, 211_ K, 211_ N microlens

212. 212_1, 212_ K, 212_ N-microprisms

212T, 212_ NT-Top surface

212B, 212_ NB to the bottom surface

213-lens light-shielding layer

300-display

300B to lower surface

400-frame

410-containing groove

420 to bottom

500-battery

600. 600' to optical sensing system

610-base

900-optical filter plate

1300 optical sensor module

1301-bearing plate

1302-Flexible Circuit Board

1303-welding wire

1305 to frame body

1306-adhesive sealing layer

A1 first pore size

A2-second pore size

ANG _1, ANG _ N-acceptance azimuth angle

ANG-212 _ N-Angle of inclination

ANGX _1, ANGX _ K, ANGX _ N deviation azimuth angle

CR-area of the object to be measured

d distance

F-target

G-gap

L1 stray light

L2 stray light

L _1, L _ K, L _ N-target incident light

L X _1, L X _ K, L X _ N-non-target incident light

NORM normal to optical sensor

SR area of array of sensing pixels

TA _1, TA _ I, TA _ J, TA _ K, TA _ N: light energy conduction shaft

Angle theta to included angle

Detailed Description

Different embodiments disclosed below may repeat use of the same reference symbols and/or designations. These iterations are for simplicity and clarity and are not intended to limit the particular relationship between the various embodiments and/or configurations discussed.

In some embodiments of the present disclosure, the light-shielding layer and the light-guiding element in the optical sensor can be used to make the sensing pixel receive light from a specific incident angle range, eliminate unnecessary stray light, and effectively reduce the thickness of the optical sensor. Therefore, the optical sensor of the embodiment of the disclosure can be easily arranged between the battery and the display of the mobile electronic device such as a mobile phone, and the light source of the display can be used for realizing the optical sensing under the screen.

Fig. 1 to 4 are a series of cross-sectional views illustrating a method of manufacturing an optical sensor 200 according to an embodiment of the present disclosure. It is particularly noted that some elements may be omitted in fig. 1 to 4 for clarity of illustrating the features of the embodiments of the present disclosure.

Referring to fig. 1, first, a substrate 201 is provided, and the substrate 201 may have a plurality of sensing pixels (sensor pixels) 203. In some embodiments, the substrate 201 may be a semiconductor substrate, such as a silicon substrate. In some embodiments, the semiconductor substrate may also include an elemental semiconductor (e.g.: germanium (germanium); compound semiconductor (compound semiconductor), for example: gallium nitride (gallium nitride), silicon carbide (silicon carbide), gallium arsenide (gallium arsenide), gallium phosphide (gallium phosphide), indium phosphide (indium phosphide), indium arsenide (indium arsenide) and/or indium antimonide (indium antimonide); alloy semiconductors (alloy semiconductors), for example: silicon germanium alloy (SiGe), gallium arsenic phosphide alloy (GaAsP), aluminum indium arsenide alloy (AlInAs), aluminum gallium arsenide alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), indium gallium phosphide alloy (GaInP) and/or indium gallium arsenide phosphide alloy (GaInAsP) or combinations of the foregoing.

In some embodiments, the substrate 201 may also be a semiconductor on insulator (soi) substrate, which may include a base plate, a buried oxide layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide layer. In addition, the conductivity type of the substrate 201 may be n-type or p-type.

In some embodiments, the substrate 201 may include various isolation features (not shown) to define active regions and to electrically isolate active region elements in/on the substrate 201. in some embodiments, the isolation features include Shallow Trench Isolation (STI) features, local oxidation of silicon (L OCOS) features, other suitable isolation features, or combinations thereof.

In some embodiments, the substrate 201 may include various p-type and/or n-type doped regions (not shown) formed by, for example, ion implantation and/or diffusion processes. In some embodiments, the doped region may form a transistor, a photodiode, or the like. In addition, the substrate 201 may also include various active elements, passive elements, and various conductive features (e.g., conductive pads, conductive lines, or vias).

In some embodiments, the sensing pixels 203 may be connected to signal processing circuitry (not shown). In some embodiments, the number of sensing pixels 203 depends on the size of the area of the optical sensing region (e.g., the area SR of the optical sensing region shown in fig. 4). Each sensing pixel 203 may include one or more photo detectors (photodetectors). In some embodiments, the light detector may comprise a photodiode. The photodiode may include a three-layer structure of a p-type semiconductor layer, an intrinsic layer (intrinsic layer), and an n-type semiconductor layer (photoelectric material). The intrinsic layer absorbs light to generate excitons (exiton), and the excitons are separated into electrons and holes at the junction of the p-type semiconductor layer and the n-type semiconductor layer, thereby generating a current signal. In some embodiments, the photodetector may be a CMOS image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-side illumination (BSI) CMOS image sensor. In some other embodiments, the light detector may also include a Charged Coupled Device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination thereof. In some embodiments, the sensing pixels 203 may convert the received optical signals into electrical signals through optical detectors and process the electrical signals through signal processing circuitry.

In some embodiments, the sensing pixels 203 may be arranged in an array, thereby forming a sensing pixel array, but the embodiments of the disclosure are not limited thereto. The cross-sectional views shown in the figures of the present disclosure show only one column of the array of sensing pixels 203 and are located below the upper surface of the substrate 201. It should be noted that the number and arrangement of the sensing pixels 203 shown in the figures of all the embodiments are only exemplary, and the embodiments of the present disclosure are not limited thereto. The sensing pixels 203 can be arranged in any number of rows and columns or other arrangements.

Referring to fig. 2, a dielectric layer 202 is formed on a substrate 201. As shown in fig. 2, a dielectric layer 202 may cover the sensing pixels 203. In some embodiments, the material of the dielectric layer 202 may include transparent photoresist, polyimide, epoxy, other suitable materials, or a combination thereof, but the embodiments of the disclosure are not limited thereto. In some embodiments, the dielectric layer 202 may comprise a photo-curable material, a thermal-curable material, or a combination of the foregoing. For example, the dielectric layer 202 may be coated on the substrate 201 and the sensing pixels 203 by a spin-coating process (spin-on process), but the disclosure is not limited thereto.

Next, a first light-shielding layer 204 is formed on the dielectric layer 202. That is, the dielectric layer 202 is formed between the substrate 201 and the first light-shielding layer 204, but the disclosure is not limited thereto. In some other embodiments, the first light-shielding layer 204 may be formed directly on the substrate 201 without including the dielectric layer 202. As shown in fig. 2, the first light-shielding layer 204 may have a plurality of first through holes (apertures) 204A, and the first through holes 204A may correspond to the sensing pixels 203. The first light-shielding layer 204 may include a light-shielding material having a transmittance of less than 1% for light having a wavelength of 1200nm or less, but the disclosure is not limited thereto.

In some embodiments, the first light-shielding layer 204 may comprise a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti), for example, although the present disclosure is not limited thereto, in such embodiments, the first light-shielding layer 204 may be formed on the substrate 201 by, for example, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) (e.g., vacuum evaporation (vacuum), sputtering, pulsed laser deposition (P L D)), atomic layer deposition (A L D), other suitable deposition, or a combination thereof. in some embodiments, the first light-shielding layer 204 may comprise a polymeric material having light-shielding properties, such as epoxy, polyimide, or the like. in such embodiments, the first light-shielding layer 204 may be formed on the substrate by, for example, spin-Coating (CVD), Chemical Vapor Deposition (CVD), other suitable methods, or a combination thereof. the first light-shielding layer 204 may be formed on the substrate by, such as a thickness of the first light-shielding layer 204 may be formed by a thickness of about 0 μm. the first light-shielding layer 204 may be formed by a thickness of the material, such as about 3 μm.

Next, a patterning process may be performed on the first light-shielding layer 204 to form a plurality of first through holes 204A having a first aperture a 1. The patterning process may include a photolithography process and an etching process. The photolithography process may include photoresist coating (e.g., spin coating), soft baking, pattern exposure, post exposure baking, photoresist development, cleaning and drying (e.g., hard baking), other suitable processes, or a combination of the foregoing. The etching process may include a wet etching process, a dry etching process (e.g., Reactive Ion Etching (RIE)), a plasma etching, an ion milling), other suitable processes, or a combination of the foregoing. The first aperture a1 of the first via 204A formed by the aforementioned method is in a range from about 0.3 μm to about 50 μm, for example, from about 4 μm to about 5 μm, but the embodiment of the disclosure is not limited thereto.

It should be noted that the first through holes 204A and the sensing pixels 203 shown in fig. 2 are disposed in a one-to-one correspondence. However, in other embodiments of the present disclosure, the first through holes 204A and the sensing pixels 203 may be correspondingly disposed in a one-to-many or many-to-one manner. For example, one first via 204A may expose more than two sensing pixels 203, or one sensing pixel 203 may expose from more than two first vias 204A. Fig. 2 shows only an exemplary arrangement, and the disclosed embodiment is not limited thereto. According to some embodiments of the present disclosure, by controlling the first aperture a1 of the patterned first light-shielding layer 204, a field of view (FOV) range of incident light may be adjusted.

Referring to fig. 3, a protection layer 205 and an optical filter layer 206 are sequentially formed on the first light-shielding layer 204. In some embodiments, the protection layer 205 may be a protection layer of an integrated circuit, and the material of the protection layer 205 may include silicon oxide, silicon nitride, other suitable materials, or a combination thereof, but the disclosure is not limited thereto. In some embodiments, for example, in a case where the material of the first light-shielding layer 204 includes a polymer material with light-shielding property, the protection layer 205 may not be formed. In some embodiments, the optical filter layer 206 may be an Infrared Cut Filter (ICF). Visible light (visible light) has a high transmittance for the infrared filter layer, and infrared light has a high reflectance for the infrared filter layer, so that infrared interference from sunlight, for example, can be reduced.

Referring to fig. 4, a transparent dielectric layer 207 is formed over the optical filter layer 206. That is, the optical filter layer 206 may be formed between the first light-shielding layer 204 and the transparent dielectric layer 207, but the disclosure is not limited thereto. In some other embodiments, the transparent dielectric layer 207 may also be formed directly on the first light-shielding layer 204 without disposing the optical filter layer 206 or disposing the optical filter layer 206 in other forms. For example, the optical filter layer 206 may be in the form of a separate optical filter plate disposed on the transparent medium layer 207 (similar to the structure shown in fig. 8).

In some embodiments, the transparent dielectric layer 207 may comprise a photo-curable material (UV-curable material), a thermal-curable material (thermal curing material), or a combination of the foregoing. For example, the transparent dielectric layer 207 may include, for example, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN) Polycarbonate (PC), Perfluorocyclobutyl (PFCB) polymer, Polyimide (PI), acryl resin, epoxy resin (epoxy resins), polypropylene (PP), Polyethylene (PE), Polystyrene (PS), polyvinyl chloride (PVC), other suitable materials, or a combination thereof, but the embodiment of the disclosure is not limited thereto.

In some embodiments, the transparent dielectric layer 207 may be formed on the first light-shielding layer 204 by spin-coating (spin-coating), dry film (dry film) process, casting (casting), bar coating (bar coating), blade coating (blade coating), roll coating (roll coating), wire bar coating (wire bar coating), dip coating (dip coating), Chemical Vapor Deposition (CVD), or other suitable methods, but the disclosure is not limited thereto. In some embodiments, the thickness of the transparent dielectric layer 207 formed by the aforementioned process is in a range from about 1 μm to about 100 μm, for example, 10 μm to 50 μm. According to some embodiments of the present disclosure, the transparent dielectric layer 207 formed by the aforementioned process may have a high yield and good quality. In addition, the offset distance of light rays passing through the subsequently formed light guide element (210) can be increased or decreased by controlling the thickness of the transparent dielectric layer 207, thereby improving the accuracy of the incident light angle that can be received by the array of sensing pixels 203.

As shown in fig. 4, a plurality of micro prisms 212 are formed in the transparent medium layer 207 and a plurality of micro lenses 211 are formed on the transparent medium layer 207, for example, the micro lenses 211 may be formed on the micro prisms 212. In some embodiments, the micro lenses 211 and the micro prisms 212 may correspond to the sensing pixels 203. Specifically, each of the micro prisms 212 corresponds to one of the first through holes 204A of the first light-shielding layer 204, and the micro prisms 212 may be connected (directly contacted) to the micro lenses 211, but the disclosure is not limited thereto. In some other embodiments, the micro lenses 211 and the micro prisms 212 may be separated from each other, i.e., the micro lenses 211 and the micro prisms 212 may be separated by a distance.

In some embodiments, the transparent medium layer 207, the micro lenses 211 and the micro prisms 212 may be a homogeneous material or a heterogeneous material, and an appropriate material combination may be selected according to actual requirements. For example, the transparent dielectric layer 207 may be exposed, developed, etched, and formed with a suitable material using a gray scale mask to form the micro-prisms 212.

In some embodiments, a thick film of a polymer material may be formed on the transparent dielectric layer 207 by high temperature reflow (reflow), and a hemispherical structure may be formed by cohesion thereof to form the microlens 211, but the embodiment of the present disclosure is not limited thereto. In some embodiments, the transparent dielectric layer 207, the micro lenses 211 and the micro prisms 212 may also include a dielectric material, such as glass, which may further improve the light transmittance, but the embodiments of the disclosure are not limited thereto. In these embodiments, the hemispherical microlens 211 may be formed by using the effect of surface tension in a drying (e.g., hard baking) step of the photolithography process, and a desired radius of curvature of the microlens 211 may be adjusted by controlling the temperature of heating. In some embodiments, the thickness of the microlenses 211 ranges between about 1 μm to about 50 μm. It should be noted that the profile of the microlens 211 is not limited to a hemispherical shape, and the embodiments of the disclosure may also adjust the profile of the microlens 211 according to the required incident light angle, for example, the microlens may have an aspheric shape (aspheric).

In the embodiment of the present disclosure, the micro lenses 211 and the micro prisms 212 may be regarded as a light guiding element 210, and the light guiding elements 210 may be arranged in an array, but the embodiment of the present disclosure is not limited thereto. That is, the light guide elements 210 and the sensing pixels 203 may be correspondingly disposed in a one-to-one manner, a one-to-many manner, or a many-to-one manner, but the embodiment of the disclosure is not limited thereto. After the light guide element 210 is formed, the optical sensor 200 of the embodiment of the present disclosure is completed. In some other embodiments, the optical filter layer 206 of the optical sensor 200 can be in the form of a separate optical filter plate disposed on the light guide element 210 (similar to the structure shown in fig. 8), but the disclosure is not limited thereto.

As shown in fig. 4, in some embodiments of the present disclosure, the micro-prism 212 may have a top surface 212T and a bottom surface 212B, and the top surface 212T and the bottom surface 212B may form an included angle θ. In some embodiments, the angle θ formed by the top surface 212T and the bottom surface 212B is variable (variable), which can be adjusted according to the position where the microprisms 212 are disposed. In addition, as shown in fig. 4, in the light guide elements 212, the included angle θ formed between the top surface 212T and the bottom surface 212B of the micro-prism 212 closer to the center of the optical sensor 200 is smaller, but the embodiment of the disclosure is not limited thereto.

Since each light guide element varies depending on the position where it is disposed, for convenience of description, 210_ N represents each light guide element, TA _ N represents the light energy transmission axis of each light guide element, ANG _ N represents the light acceptance angle of each light guide element, L _ N represents the parallel target incident light of each light guide element, L X _ N represents the parallel non-target incident light of each light guide element, and ANGX _ N represents the deviation angle of the parallel non-target incident light of each light guide element with respect to the light energy transmission axis TA _ N thereof.

Fig. 5 is a partially enlarged view of the optical sensor 200 shown in fig. 4. Referring to fig. 5, the light guiding element 210_ N may include a microlens 211_ N and a microprism 212_ N, where the microlens 211_ N may be used to condense light and the microprism 212_ N may be used to refract light. A tilt angle ANG _212_ N (or an included angle formed between the top surface 212_ NT of the micro-prism 212_ N and the bottom surface 212_ NB) is formed between the bottom surface 212_ NB (or tilted surface) of the micro-prism 212_ N and a plane perpendicular to the normal NORM of the optical sensor 200, and the tilt angle ANG _212_ N can deflect the incident light converged by the micro-lens 211_ N when the incident light is incident on the bottom surface 212_ NB.

As shown in FIG. 5, the light directing element 210_ N may have a light energy conducting axis TA _ N, and a light receiving azimuth angle ANG _ N corresponding to the light energy conducting axis TA _ N is an azimuth angle at which the normal NORM of the optical sensor 200 and the light energy conducting axis TA _ N are opened toward the target at the intersection of the micro lens 211_ N. if the incident light is transmitted along the light energy conducting axis TA _ N, the light directing element 210_ N may direct the incoming light to be finally incident on the corresponding sensing pixel 203. therefore, the plurality of parallel target incident lights are the incident lights L _ N incident on the micro lens 211_ N in parallel to each light energy conducting axis TA _ N, and the plurality of parallel non-target incident lights are the incident lights L X _ N incident on the micro lens 211_ N in parallel to each light energy conducting axis TA _ N. furthermore, the non-target incident lights L X _ N and each light energy conducting axis TA _ N have an azimuth angle of deviation ANGX _ N.

In the embodiment shown in fig. 5, the target incident light L _ N travels along the optical energy conducting axis TA _ N (i.e., parallel to the optical energy conducting axis TA _ N), but this is not a limitation of the disclosed embodiments, in some embodiments, the target incident light L _ N that can be received by the sensing pixel 203 through the light directing element 210_ N may be included at an angle ranging from-3.5 degrees to 3.5 degrees, -4 degrees to +4 degrees, or-5 degrees to +5 degrees, the deviation azimuth angle ANGX _ N may be included at an angle ranging from 3.5 degrees to 90 degrees, from 4 degrees to 90 degrees, or from 5 degrees to 90 degrees, i.e., the non-target incident light L X _ N that is included at an angle greater than 3.5 degrees (or greater than 4 degrees, or greater than 5 degrees) with the optical energy conducting axis TA _ N will not be incident to the sensing pixel 203.

Briefly, the light guide element 210_ N of the optical sensor 200 can emit the target incident light L _ N entering the optical sensor 200 from the outside to the sensing pixel 203 through the transparent dielectric layer 207, and emit the non-target incident light L X _ N entering the optical sensor 200 from the outside to the outside of the sensing pixel 203, thereby sensing an image of the target, for example, the target incident light L _ N can be emitted to the sensing pixel 203 through the first through hole 204A, and the non-target incident light L X _ N can not be emitted to the first through hole 204A (e.g., to the other region of the first light shielding layer 204 excluding the first through hole 204A).

The optical sensor 200 according to the embodiment of the disclosure can control the angle of the specific incident light (parallel to the optical energy transmission axis) to be sensed by the sensing pixel 203 through the relative positions (e.g., aligned to the optical energy transmission axis) of the lens 211, the micro prism 212 and the first light hole 204A (and the sensing pixel 203) of the light guide element 210, so that the quality of the optical sensor 200 can be effectively improved. Compared with the conventional optical sensor, the optical sensor of the embodiment of the disclosure can effectively reduce the process cost and simplify the manufacturing process.

For example, as shown in fig. 4, the light guiding element 210_1 and the light guiding element 210_ K have different light energy transmission axes TA _1 and TA _ K, respectively, although they have different light energy transmission axes TA _1 and TA _ K, the target incident light L _1 of the light guiding element 210_1 and the target incident light L _ K of the light guiding element 210_ K are directed to the corresponding sensing pixel 203 via the light guiding element 210_1 and the light guiding element 210_ K, respectively, and the non-target incident light L X _1 of the light guiding element 210_1 and the non-target incident light L X _ K of the light guiding element 210_ K have an off-azimuth angle ANGX _1 and an off-azimuth angle ANGX _ K, respectively, which cannot enter the corresponding sensing pixel 203 after being incident on the light guiding element 210_1 and the light guiding element 210_ K, respectively.

As shown in fig. 4, in the array of the sensing pixels 203, the light energy transmission axes (e.g., TA _1, TA _ K, TA _ I, and TA _ J in fig. 4) of the light guide elements 210 corresponding from the center to the periphery can shift the light receiving azimuth angle of each light guide element from 0 degree to a predetermined oblique angle (e.g., 35 degrees) through the micro-prism of each light guide element. For example, the oblique angle of incidence (continuous variation of the acceptance azimuth angle of the optical energy transmission axis) may be progressively changed. As shown in fig. 4, the optical sensor 200 can sense a larger area CR (e.g. a fingerprint contact area) of the object to be detected with a smaller area SR of the array of sensing pixels 203, thereby increasing the sensing accuracy and effectively reducing the cost, but the disclosure is not limited thereto.

FIG. 6 shows a cross-sectional view of an optical sensor 200-1 according to another embodiment of the present disclosure. The difference from the optical sensor 200 shown in FIG. 4 is that the optical sensor 200-1 can sense a smaller area CR of the object with a larger area SR of the array of sensing pixels 203. The position of the light guide element 210 (micro-prism 212) can be adjusted according to actual requirements to achieve different light receiving effects.

Fig. 7 shows a cross-sectional view of an optical sensing system 600 according to an embodiment of the present disclosure. In some embodiments, the optical sensing system 600 may be an electronic device such as a mobile phone or a tablet computer, which may include a frame 400, an optical sensor 200 and a display 300, but the disclosure is not limited thereto.

Referring to fig. 7, in some embodiments, the optical sensing system 600 may further include a base 610, and the base 610 may be, for example, a portion of a housing of the electronic device. The battery 500 may be disposed on the base 610. The frame 400 may be disposed above the battery 500 and has a receiving groove 410, but the embodiment of the disclosure is not limited thereto. In some other embodiments, the frame 400 may not have the receiving groove 410, depending on the actual requirement.

The optical sensor 200 may be disposed on the frame 400. As shown in fig. 7, the optical sensor 200 may be disposed in the accommodating cavity 410 of the frame 400 and located on a bottom 420 of the accommodating cavity 410 for sensing an image of a target object F. The structure of the optical sensor 200 can be as described above, and is not described herein. The display 300 may be disposed above the optical sensor 200 for displaying information. The object F may be located on or above the display 300. In some embodiments, the optical sensor 200 can sense the image of the object F through the display 300, and the battery 500 can supply power to the optical sensor 200 and the display 300 to maintain the operation of the electronic device.

In some embodiments, a distance d between the bottom 420 of the receiving groove 410 and the display 300 may be between 0.1mm and 0.5mm, 0.2 mm and 0.5mm, 0.3 mm and 0.5mm, or 0.4 mm and 0.5mm, but the disclosure is not limited thereto. Here, the distance d may be defined as the shortest distance between the bottom 420 of the receiving cavity 410 and the display 300 in a direction ND parallel to the normal direction of the frame 400.

In some embodiments, the optical sensor 200 is applied to the optical sensing system 600, so that the overall height or thickness of the module is less than 0.5mm, which is desirable for the thin-type module, and therefore the optical sensor 200 can be disposed under the screen (e.g., the display 300) of the electronic device and between the battery and the electronic device without affecting the configuration of the battery 500. It is to be noted that the optical sensor and the optical sensing system using the same according to the embodiments of the present disclosure are not limited to fingerprint recognition, but can be applied to vein, blood flow rate and blood oxygen detection, for example. Alternatively, the optical sensor and the optical sensing system using the same of the embodiments of the present disclosure may be used to perform non-contact image capturing (e.g., an off-screen camera, etc.) to capture, for example, a human face (e.g., for face recognition) or eyes (e.g., for iris recognition) or perform a general photographing function.

In some embodiments, the display 300 may comprise an organic light-emitting diode (O L ED) display or a micro L ED display, or other displays, and in some embodiments, the display 300 of the optical sensing system 600 may be used as a light source to emit light to illuminate an object F in contact with or not in contact with the upper surface of the display 300, and the object F reflects the light to the optical sensor 200 disposed under the display 300 to sense and identify the profile features of the object F (e.g., the fingerprint features of a finger).

As shown in fig. 7, in some embodiments, the optical sensor 200 may be configured to be included in an optical sensor module 1300. For example, the optical sensor module 1300 may include a carrier 1301, a flexible printed circuit 1302, and bonding wires 1303 for electrically connecting the optical sensor 200 and the flexible printed circuit 1302, wherein the bonding wires 1303 may be encapsulated and protected by an encapsulant layer 1306. The top surface of the sealant layer 1306 may be flush with the top surface of the transparent dielectric layer 207, but the embodiment of the disclosure is not limited thereto. In some embodiments, the material of the bonding wire 1303 may include aluminum (Al), copper (Cu), gold (Au), an alloy thereof, other suitable conductive materials, or a combination thereof, but the embodiments of the disclosure are not limited thereto.

Fig. 8 shows a cross-sectional view of an optical sensing system 600' according to another embodiment of the present disclosure. The difference from the optical sensing system 600 shown in fig. 7 is that the optical sensing system 600' replaces the optical filter layer 206 with an optical filter plate 900. For example, the optical filter board 900 may be a stand-alone optical filter board, and the optical filter board 900 may be carried by a support (dam structure) disposed on the flexible circuit board 1302 or the frame 1305. That is, the optical filter plate 900 may be disposed above the microlenses 210 through the optical sensor module 1300. As shown in fig. 8, in the present embodiment, the transparent dielectric layer 207 is disposed on the protective layer 250. The optical filter 900 is disposed above the light guide element 210, and filters the wavelength of incident light. The rest of the parts that are the same as those in fig. 7 are not described in detail herein.

It should be noted that, although the optical sensor module 1300 and the optical filter plate 900 are disposed on the frame 400 and separated from the display 300 as shown in fig. 8, the embodiments of the disclosure are not limited thereto. In some other embodiments, the optical sensor module 1300 and the optical filter plate 900 may also be attached to the lower surface 300B of the display 300.

FIG. 9 shows a cross-sectional view of an optical sensor 200-2 according to an embodiment of the present disclosure. The difference from the optical sensor 200 shown in fig. 4 is that the optical sensor 200-2 shown in fig. 9 further includes a lens shielding layer 213 (which can be regarded as a second shielding layer), and the lens shielding layer 213 is disposed on the first shielding layer 204. In more detail, the lens shading layer 213 may be disposed on the transparent dielectric layer 207 and located in the plurality of gaps G between the microlenses 211. The lens light-shielding layer 213 may, for example, expose (at least part of) the curved surface region of the microlenses 211. In other words, the lens light-shielding layer 213 may have a plurality of through holes (corresponding to the gap G), and the microlenses 211 of the light-guiding element 210 may be disposed in the through holes, but the embodiment of the disclosure is not limited thereto.

In some cases, light (e.g., the stray light L1 shown in fig. 9) may be incident from the empty region (e.g., the region indicated by the gap G) between the microlenses 211 and incident to the sensing pixels 203 through the first through holes 204A, thereby causing interference and reducing image quality in the optical sensor 200-2 shown in fig. 9, the lens shielding layer 213 may block the stray light L1 from being incident to the sensing pixels 203, thereby effectively preventing the interference of the stray light and improving the image quality.

FIG. 10 shows a cross-sectional view of an optical sensor 200-3 according to another embodiment of the present disclosure. The difference from the optical sensor 200 shown in fig. 4 is that the optical sensor 200-3 shown in fig. 10 further includes a second light-shielding layer 208 and a transparent dielectric layer 209, and both the second light-shielding layer 208 and the transparent dielectric layer 209 are disposed on the first light-shielding layer 204. In more detail, the second light-shielding layer 208 is disposed on the transparent dielectric layer 207, the transparent dielectric layer 209 is disposed on the second light-shielding layer 208, and the light-guiding element 210 is disposed on the transparent dielectric layer 209 (e.g., the micro-lenses 211 are disposed on the transparent dielectric layer 209, and the micro-prisms 212 are disposed in the transparent dielectric layer 209).

Referring to fig. 10, the second light shielding layer 208 may have a plurality of second through holes 208A, the second through holes 208A may correspond to the first through holes 204A, and each of the second through holes 208A may have a second aperture a 2. In some embodiments, the second aperture a2 of the second via 208A is larger than the first aperture a1 of the first via 204, but the disclosure is not limited thereto. In some embodiments, the thickness of the second light-shielding layer 208 is different from the thickness of the first light-shielding layer 204. For example, the thickness of the second light-shielding layer 208 may be greater than the thickness of the first light-shielding layer 204, but the disclosure is not limited thereto. As shown in FIG. 10, in some embodiments, microprisms 212 of light directing element 210 are disposed in second via 208A. For example, the micro prisms 212 may be disposed in the second through hole 208A completely or only partially, but the embodiment of the disclosure is not limited thereto.

In some cases, crosstalk (cross talk) may be generated between adjacent light directing elements 210 (not limited to the nearest light directing element 210). that is, stray light (e.g., stray light L2 shown in fig. 10) of an adjacent light directing element of a target light directing element may couple into target incident light of the target light directing element and enter the sensing pixel 203 corresponding to the target light directing element through the first through hole 204A, thereby causing interference and reducing image quality.in the optical sensor 200-3 shown in fig. 10, the second light shielding layer 208 may shield stray light L2 entering the adjacent light directing elements from the outside from entering the sensing pixel 203, thereby effectively preventing stray light interference and improving image quality.

In some embodiments, the optical sensor 200-2 shown in fig. 9 or the optical sensor 200-3 shown in fig. 10 may be disposed in the optical sensing system 600 shown in fig. 7 (or the optical sensing system 600' shown in fig. 8) instead of the optical sensor 200 shown in fig. 4, which is not repeated herein.

In summary, the embodiments of the disclosure can achieve that the sensing pixel can receive light incident from a specific range of viewing angles without an additional light shielding layer through the light guiding element, and can reduce the thickness of the optical sensor.

The components of several embodiments are summarized above so that those skilled in the art to which the disclosure pertains can more clearly understand the aspects of the embodiments of the disclosure. Those skilled in the art should appreciate that they may readily use the disclosed embodiments as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure should be determined by the appended claims. In addition, although the present disclosure has been described with reference to several preferred embodiments, it is not intended to limit the present disclosure.

Reference throughout this specification to features, advantages, or similar language does not imply that all of the features and advantages that may be realized with the present disclosure should be or are in any single embodiment of the disclosure. Rather, language referring to the features and advantages is understood to mean that a specific feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussion of the features and advantages, and similar language, throughout this specification may, but do not necessarily, refer to the same embodiment.

Furthermore, the described features, advantages, and characteristics of the disclosure may be combined in any suitable manner in one or more embodiments. One skilled in the relevant art will recognize, in light of the description herein, that the present disclosure may be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be recognized in certain embodiments that may not be present in all embodiments of the disclosure.

Claims

1. An optical sensor, comprising:

a substrate having a plurality of sensing pixels;

a first light shielding layer disposed on the substrate and having a plurality of first through holes corresponding to the sensing pixels;

a transparent dielectric layer disposed on the first light-shielding layer; and

a plurality of light directing elements, wherein each of the plurality of light directing elements comprises:

the microprism is arranged in the transparent medium layer and corresponds to one of the first through holes; and

a micro lens set on the micro prism.

2. The optical sensor of claim 1, wherein the micro-prism is connected to the micro-lens.

3. The optical sensor of claim 1, wherein the micro-prism has a top surface and a bottom surface, and the top surface and the bottom surface form an included angle.

4. The optical sensor of claim 3, wherein the included angle is variable.

5. The optical sensor as claimed in claim 4, wherein the included angle of the microprisms in the plurality of light directing elements decreases closer to the center of the optical sensor.

6. The optical sensor of claim 1, further comprising:

7. The optical sensor of claim 1, further comprising:

8. The optical sensor of claim 1, further comprising:

9. The optical sensor of claim 1, further comprising:

10. The optical sensor of claim 9, wherein an aperture of each of the second plurality of vias is larger than an aperture of each of the first plurality of vias.

11. The optical sensor as claimed in claim 9, wherein the second light shielding layer has a thickness different from that of the first light shielding layer.

12. The optical sensor as claimed in claim 9, wherein the second light shielding layer is disposed on the transparent dielectric layer, and the microlenses of the light guide elements are disposed in the second through holes.

13. The optical sensor of claim 9, wherein the second light shielding layer is disposed in the transparent dielectric layer, and the second through holes correspond to the first through holes.

14. The optical sensor of claim 13, wherein some of the microprisms in the plurality of light directing elements are located in the second plurality of through holes.

15. An optical sensing system, comprising:

a frame having a receiving groove;

the optical sensor according to any of claims 1-14, disposed in the receiving cavity; and

a display disposed on the optical sensor.

16. The optical sensing system of claim 15, wherein a distance between the bottom of the receiving groove and the display is between 0.1mm and 0.5 mm.