WO2021042921A1 - 导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法 - Google Patents

导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法 Download PDF

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WO2021042921A1
WO2021042921A1 PCT/CN2020/106085 CN2020106085W WO2021042921A1 WO 2021042921 A1 WO2021042921 A1 WO 2021042921A1 CN 2020106085 W CN2020106085 W CN 2020106085W WO 2021042921 A1 WO2021042921 A1 WO 2021042921A1
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azide
copper
cuprous
tcnq
metal organic
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PCT/CN2020/106085
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French (fr)
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张文超
俞春培
陈俊宏
郑子龙
陈亚杰
王嘉鑫
胡斌
叶家海
秦志春
田桂蓉
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南京理工大学
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Priority to US17/638,437 priority Critical patent/US20220402769A1/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/08—Hydrazoic acid; Azides; Halogen azides
    • C—CHEMISTRY; METALLURGY
    • C06—EXPLOSIVES; MATCHES
    • C06B—EXPLOSIVES OR THERMIC COMPOSITIONS; MANUFACTURE THEREOF; USE OF SINGLE SUBSTANCES AS EXPLOSIVES
    • C06B35/00—Compositions containing a metal azide
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/60—Constructional parts of cells
    • C25B9/65—Means for supplying current; Electrode connections; Electric inter-cell connections
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/02—Electrolytic coating other than with metals with organic materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/06—Electrolytic coating other than with metals with inorganic materials by anodic processes

Definitions

  • the invention belongs to the technical field of electrochemical synthesis, and relates to a method for preparing conductive metal organic frame packaging copper azide and cuprous azide.
  • the copper-containing metal organic framework (HKUST-1) is carbonized at high temperature to obtain a porous carbon framework and a highly dispersed copper source, and the porous carbon and copper azide composite material is prepared by the azide acid gas corrosion reaction .
  • the porous carbon encapsulated copper azide material has low electrostatic sensitivity (1.6mJ) and excellent flame sensitivity.
  • the above research shows that the sensitive copper azide material encapsulated by conductive materials can effectively reduce its electrostatic sensitivity and improve its antistatic ability.
  • the above preparation method still has obvious defects. It is difficult to deposit metallic copper inside carbon nanotubes, and the content of deposited copper is not high, resulting in a low filling rate of copper azide; in addition, the preparation process requires porous anodic aluminum oxide (AAO) as a template, and the operation process is complicated and cumbersome.
  • AAO anodic aluminum oxide
  • the metal-organic framework-derived porous carbon framework needs to undergo a high-temperature calcination process, and the high-temperature treatment will destroy the uniform framework structure to a certain extent, causing the porous carbon framework to collapse locally.
  • the above-mentioned copper azide materials are prepared by gas-solid azide method.
  • the dangerous azide gas and the time-consuming reaction process greatly restrict the application of copper azide materials. Therefore, the preparation of copper azide and cuprous azide materials still faces severe challenges, and it is urgent to develop a safe and efficient azide method to prepare high-performance copper azide and cuprous azide materials.
  • the object of the present invention is to provide a method for encapsulating copper azide and cuprous azide with a conductive metal-organic frame.
  • the preparation method uses a conductive copper-containing metal-organic frame material as a precursor, and uses liquid-solid electrochemical azide The chemical reaction completes the azidation of the precursor, and realizes that the copper azide and cuprous azide nanocrystals are highly uniformly embedded in the conductive frame, which effectively improves the electrostatic safety of the copper azide material, and the preparation process is safe Efficient.
  • the preparation method of conductive metal organic frame encapsulated copper azide and cuprous azide is prepared by liquid-solid electrochemical azide, and the specific steps are as follows:
  • metal-organic framework material of the conductive copper-containing anode containing N 3 - solution as electrolyte
  • the containing N 3 - used for the conventional solution containing a conventional N 3 - in the aqueous or alcoholic solution of a low density such as those containing N 3 - in methanol or ethanol solution.
  • the solution containing N 3 - can be a sodium azide solution or a potassium azide solution, and the N 3 - concentration is preferably 0.01-1 mol/L.
  • the conductive copper-containing metal organic framework material can be Cu(TCNQ), Cu-CAT, etc., wherein TCNQ is 7,7,8,8-tetracyanoquinodimethane, and CAT is Catecholamines.
  • the energization condition can be a constant current or a constant voltage mode.
  • the current density is 0.1-10 mA/cm 2 .
  • the azidation reaction time is 1 to 240 minutes.
  • the present invention has the following advantages:
  • the copper azide and cuprous azide are uniformly embedded in the conductive metal organic frame, which can not only effectively avoid the agglomeration of copper azide and cuprous azide, but also reduce static electricity generated by friction and displacement.
  • the conductive metal organic frame can promote the effective transfer of charges, avoid the accumulation of static charges, and improve the electrostatic safety performance.
  • liquid-solid electrochemical azide method is used to prepare copper azide and cuprous azide materials, without the use of highly dangerous azido acid gas, and the entire reaction is completed in the liquid phase, and the preparation process is safe and reliable , Strong operability;
  • the liquid-solid electrochemical azidation method is simple, efficient, and time-consuming, and the performance of the energetic film can be adjusted by adjusting the current density and azidation time, such as regulating the heat release and electrostatic sensitivity of the energetic film Wait;
  • liquid-solid electrochemical azide method is fully compatible with the MEMS process, and the copper azide and cuprous azide thin films can be directly integrated on the micro device or chip.
  • Fig. 1 is an XRD pattern of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared by using Cu(TCNQ) as a precursor in Example 5;
  • Example 2 is an SEM image of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared by using Cu(TCNQ) as a precursor in Example 5;
  • Example 3 is an HRTEM image of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared by using Cu(TCNQ) as a precursor in Example 5;
  • Example 4 is a TG-DSC chart of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared by using Cu(TCNQ) as a precursor in Example 5;
  • FIG. 5 is a comparison diagram of electrostatic sensitivity between Cu(TCNQ) packaged copper azide and cuprous azide materials and copper azide in Example 5.
  • Cu(TCNQ) film As anode, 0.01mol/L sodium azide aqueous solution as electrolyte, current density is 0.1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 240 minutes. After the reaction, it is dried to obtain Cu(TCNQ) packaged copper azide and cuprous azide materials.
  • Cu(TCNQ) film As anode, 0.02mol/L sodium azide aqueous solution as electrolyte, current density is 0.1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 240 minutes. After the reaction, it is dried to obtain Cu(TCNQ) packaged copper azide and cuprous azide materials.
  • Cu(TCNQ) film As anode, 1mol/L sodium azide aqueous solution as electrolyte, current density is 0.1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 120 minutes. After the completion, drying is performed to obtain Cu (TCNQ) packaged copper azide and cuprous azide materials.
  • Cu(TCNQ) film As anode, 0.02mol/L sodium azide aqueous solution as electrolyte, current density is 0.1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 1 minute. After the reaction, it is dried to obtain Cu(TCNQ) packaged copper azide and cuprous azide materials.
  • Cu(TCNQ) film As anode, 0.02mol/L sodium azide aqueous solution as electrolyte, current density is 0.1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 60 minutes. After the reaction, it is dried to obtain Cu(TCNQ) packaged copper azide and cuprous azide materials.
  • the structure, morphology and performance of the Cu(TCNQ) package copper azide and cuprous azide materials prepared in each embodiment are similar.
  • the Cu(TCNQ) packaged copper azide and cuprous azide materials prepared in Example 5 are taken as examples to characterize their morphology and performance.
  • Figure 1 is the XRD pattern of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared with Cu(TCNQ) as the precursor, indicating that the main components of the resulting material are cuprous azide and cuprous azide Copper and Cu (TCNQ).
  • Figure 2 is an SEM image of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared with Cu(TCNQ) as a precursor, indicating that the resulting material is a thin-sheet array structure.
  • Figure 3 is the HRTEM image of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared with Cu(TCNQ) as the precursor, indicating that the generated copper azide nanocrystals are highly uniformly embedded in Cu (TCNQ) In the framework.
  • Figure 4 is a TG-DSC chart of Cu(TCNQ) packaged copper azide and cuprous azide materials prepared with Cu(TCNQ) as the precursor.
  • the first exothermic peak is the rapid rate of cuprous azide Decomposition reaction
  • the second exothermic peak is the rapid decomposition reaction of copper azide.
  • Figure 5 is a comparison diagram of the electrostatic sensitivity of Cu(TCNQ) packaged copper azide and cuprous azide materials with copper azide, showing that copper azide and cuprous azide are packaged in highly conductive Cu( TCNQ) After the inside of the frame, the electrostatic sensitivity is significantly reduced, and the electrostatic safety is significantly improved.
  • the copper oxide array film is used as the anode, the 0.02mol/L sodium azide aqueous solution is used as the electrolyte, the current density is 1mA/cm 2 , the copper oxide array film completes the azide reaction at the anode, the reaction time is 10 minutes, and the reaction is over Then, it is dried to obtain a thin film containing copper azide.
  • Cu(TCNQ) film As anode, 0.02mol/L sodium azide aqueous solution as electrolyte, current density is 1mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, the reaction time is 10 minutes, the reaction After the completion, drying is performed to obtain Cu (TCNQ) packaged copper azide and cuprous azide materials.
  • Cu(TCNQ) film As anode, 0.02mol/L sodium azide aqueous solution as electrolyte, current density is 10mA/cm 2 , Cu(TCNQ) completes the azide reaction at the anode, and the reaction time is 10 minutes. After the completion, drying is performed to obtain Cu (TCNQ) packaged copper azide and cuprous azide materials.

Abstract

提供一种导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法。所述方法采用导电性含铜金属有机框架材料为前驱体，通过液-固电化学叠氮化反应完成前驱体的叠氮化。将叠氮化铜和叠氮化亚铜纳米晶体高度均匀地内嵌在导电框架内，不仅可以有效避免叠氮化铜和叠氮化亚铜的团聚，减少摩擦、位移等产生的静电，同时导电框架可以促进电荷的有效转移，避免静电荷的积累，提高静电安全性能。另外，液-固电化学叠氮化反应具有安全高效、反应时间短、可操作性强等优点，且制备工艺与MEMS工艺兼容，利于叠氮化铜和叠氮化亚铜材料在微器件中的应用。

Description

导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法 技术领域
本发明属于电化学合成技术领域，涉及一种导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法。
背景技术
微小型火工品的发展对含能材料提出了高能量输出、低能刺激、小尺寸装药及传播、与微机电***(MEMS)工艺兼容等要求，而传统含能材料受其制备工艺及装药方式的限制，已经不能满足该发展要求。叠氮化铜和叠氮化亚铜作为高能量密度含能材料，其起爆威力显著高于叠氮化铅和斯蒂芬酸铅，可有效降低敏感药剂装药量，降低输入能量，提高武器安全性。另外，铜元素的毒性远小于铅，对人体和环境的危害小。但是，铜的叠氮化物材料具有高的静电感度，严重制约了其在实际生产中的应用。
Yury Gogotsi等(Pelletier V,Bhattacharyya S,Knoke I,et al.Copper azide confined inside templated carbon nanotubes[J].Advanced Functional Materials,2010,20(18):3168-3174.)将纳米铜颗粒填入单壁碳纳米管中，通过叠氮酸气体腐蚀制备得到封装在碳纳米管内的叠氮化铜材料。由于碳纳米管出色的导电性能，可以降低静电积累带来的安全隐患。用碳纳米管包覆的叠氮化铜与纯的叠氮化铜相比，静电感度明显降低。
Yang Li等(Wang Q,Feng X,Wang S,et al.Metal-organic framework templated synthesis of copper azide as the primary explosive with low electrostatic sensitivity and excellent initiation ability[J].Advanced Materials,2016,28(28):5837-5843.)将含铜金属有机框架(HKUST-1)在高温下碳化得到多孔碳骨架和高度分散的铜源，通过叠氮酸气体腐蚀反应制备得到多孔碳和叠氮化铜复合材料。多孔碳封装的叠氮化铜材料具有低的静电感度(1.6mJ)以及出色的火焰感度。
上述研究表明，用导电材料封装敏感的叠氮化铜材料可以有效地降低其静电感度，提高抗静电能力。但是，上述制备方法仍然存在明显的缺陷。在碳纳米管内部沉积金属铜较为困难，且沉积铜的含量不高，导致叠氮化铜的填充率较低； 另外制备过程需要以多孔阳极氧化铝(AAO)为模板，操作过程复杂繁琐。金属有机框架衍生多孔碳骨架需要经过高温煅烧过程，高温处理一定程度上会破坏均匀的框架结构，造成多孔碳骨架局部塌陷。此外，上述叠氮化铜材料的制备均采用气-固叠氮化方法，危险的叠氮酸气体以及耗时的反应过程(＞12h)，极大地制约了叠氮化铜材料的应用。因此叠氮化铜和叠氮化亚铜材料的制备仍面临严峻挑战，亟需开发一种安全高效的叠氮化方法制备高性能的叠氮化铜和叠氮化亚铜材料。
发明内容
本发明的目的在于提供一种导电金属有机框架封装叠氮化铜和叠氮化亚铜的方法，该制备方法以导电性含铜金属有机框架材料为前驱体，通过液-固电化学叠氮化反应完成前驱体的叠氮化，实现叠氮化铜和叠氮化亚铜纳米晶体高度均匀地内嵌在导电框架内，有效提高了铜叠氮化物材料的静电安全性，且制备过程安全高效。
实现本发明的技术解决方案为：
导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法，采用液-固电化学叠氮化制备，具体步骤为：
以导电性含铜的金属有机框架材料为阳极，以含N 3 -的溶液为电解液，在通电条件下导电性含铜金属有机框架在阳极完成叠氮化反应，反应结束后，干燥，得到导电金属有机框架封装叠氮化铜和叠氮化亚铜材料。
优选地，所述的含N 3 -的溶液为现有常规使用的含N 3 -的水溶液或低密度的醇溶液，例如含N 3 -的甲醇溶液或乙醇溶液。所述的含N 3 -的溶液可以是叠氮化钠溶液或叠氮化钾溶液，N 3 -浓度优选为0.01～1mol/L。
优选地，所述的导电性含铜的金属有机框架材料可以是Cu(TCNQ)、Cu-CAT等，其中TCNQ为7,7,8,8-四氰基对苯二醌二甲烷，CAT为儿茶酚胺。
优选地，所述的通电条件可以是恒电流或恒电压模式，采用恒电流模式时，电流密度为0.1～10mA/cm 2。
优选地，所述的叠氮化反应时间为1～240分钟。
本发明与现有技术相比，具有以下优点：
(1)将叠氮化铜和叠氮化亚铜均匀地内嵌在导电金属有机框架内，不仅可以有效避免叠氮化铜和叠氮化亚铜的团聚，减少摩擦、位移等产生的静电，同时导电金属有机框架可以促进电荷的有效转移，避免静电荷的积累，提高静电安全性能。
(2)直接选择导电性含铜金属有机框架材料作为前驱体，避免了煅烧，去模板等复杂制备过程。
(3)采用液-固电化学叠氮化方法制备叠氮化铜和叠氮化亚铜材料，无需使用高危险性的叠氮酸气体，而且整个反应在液相中完成，制备过程安全可靠，可操作性强；
(4)液-固电化学叠氮化方法简单高效，耗时短，且可以通过调节电流密度，以及叠氮化时间对含能薄膜的性能进行调控，如调控含能薄膜放热量、静电感度等；
(5)液-固电化学叠氮化方法与MEMS工艺完全兼容，可以直接将叠氮化铜和叠氮化亚铜薄膜集成在微器件或者芯片上。
附图说明
图1为实施例5中以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的XRD图；
图2为实施例5中以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的SEM图；
图3为实施例5中以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的HRTEM图；
图4为实施例5中以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的TG-DSC图；
图5为实施例5中Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料与叠氮化铜的静电感度对比图。
具体实施方式
下面结合实施例和图表对本发明作进一步的详细描述，本发明的实施方式不 限于此。
Cu(TCNQ)的制备参考文献【Liu H,Liu Z,Qian X,et al.Field emission and electrical switching properties of large-area CuTCNQ nanotube arrays[J].Crystal Growth&Design,2009,10(1):237-243.】：具体为在铜基底上，采用浸渍法制备Cu(TCNQ)。
Cu-CAT的制备参考文献【Hmadeh M,Lu Z,Liu Z,et al.New porous crystals of extended metal-catecholates[J].Chemistry of Materials,2012,24(18):3511-3513.】：具体为采用溶剂热法得到Cu-CAT。
实施例1
以Cu(TCNQ)薄膜为阳极，以0.01mol/L叠氮化钠水溶液为电解液，电流密度为0.1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为240分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
实施例2
以Cu(TCNQ)薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密度为0.1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为240分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
实施例3
以Cu(TCNQ)薄膜为阳极，以1mol/L叠氮化钠水溶液为电解液，电流密度为0.1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为120分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
实施例4
以Cu(TCNQ)薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密度为0.1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为1分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
实施例5
以Cu(TCNQ)薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密度为0.1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为60分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
各实施例制得的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的结构、形貌和 性能相近。以下以实施例5制得的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料为例，对其形貌性能进行表征。
图1为以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的XRD图，表明生成的材料主要成分为叠氮化亚铜、叠氮化铜以及Cu(TCNQ)。
图2为以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的SEM图，表明生成的材料为薄片阵列结构。
图3为以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的HRTEM图，表明生成的铜叠氮化物纳米晶体高度均匀地内嵌在Cu(TCNQ)骨架内。
图4为以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的TG-DSC图，第一个放热峰为叠氮化亚铜的快速分解反应，第二个放热峰为叠氮化铜的快速分解反应。
图5为Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料与叠氮化铜的静电感度对比图，表明将叠氮化铜和叠氮化亚铜封装在高导电性的Cu(TCNQ)骨架内部后，静电感度明显下降，静电安全性显著提高。
对比例1
以氧化铜阵列薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密度为1mA/cm 2，氧化铜阵列薄膜在阳极完成叠氮化反应，反应时间为10分钟，反应结束后，干燥，得到含叠氮化铜的薄膜。
表1不同前驱体电化学叠氮化制备叠氮化铜和叠氮化亚铜材料的静电感度对比
Figure PCTCN2020106085-appb-000001
由表1可以看出，以Cu(TCNQ)为前驱体制备得到的Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料的静电安全性明显高于以氧化铜为前驱体制备得到的铜叠氮化物材料。
实施例6
以Cu(TCNQ)薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密 度为1mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为10分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。
实施例7
以Cu(TCNQ)薄膜为阳极，以0.02mol/L叠氮化钠水溶液为电解液，电流密度为10mA/cm 2，Cu(TCNQ)在阳极完成叠氮化反应，反应时间为10分钟，反应结束后，干燥，得到Cu(TCNQ)封装叠氮化铜和叠氮化亚铜材料。

Claims (9)

  1. 一种导电金属有机框架封装叠氮化铜和叠氮化亚铜的制备方法，其特征在于，具体步骤为：
    以导电性含铜的金属有机框架材料为阳极，以含N 3 -的溶液为电解液，在通电条件下导电性含铜金属有机框架在阳极完成叠氮化反应，反应结束后，干燥，得到导电金属有机框架封装叠氮化铜和叠氮化亚铜材料。
  2. 根据权利要求1所述的制备方法，其特征在于，所述的含N 3 -的溶液为含N 3 -的水溶液或低密度的醇溶液。
  3. 根据权利要求2所述的制备方法，其特征在于，所述的含N 3 -的低密度的醇溶液为含N 3 -的甲醇溶液或乙醇溶液。
  4. 根据权利要求1所述的制备方法，其特征在于，所述的含N 3 -的溶液为叠氮化钠溶液或叠氮化钾溶液。
  5. 根据权利要求1～4任一所述的制备方法，其特征在于，所述的含N 3 -的溶液中，N 3 -浓度为0.01～1mol/L。
  6. 根据权利要求1～4任一所述的制备方法，其特征在于，所述的导电性含铜的金属有机框架材料为Cu(TCNQ)或Cu-CAT。
  7. 根据权利要求1～4任一所述的制备方法，其特征在于，所述的通电条件为恒电流或恒电压模式。
  8. 根据权利要求7所述的制备方法，其特征在于，采用恒电流模式时，电流密度为0.1～10mA/cm 2。
  9. 根据权利要求1所述的制备方法，其特征在于，所述的叠氮化反应时间为1～240分钟。
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