WO2020179210A1 - 膜構造体、圧電体膜及び超伝導体膜 - Google Patents
膜構造体、圧電体膜及び超伝導体膜 Download PDFInfo
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- WO2020179210A1 WO2020179210A1 PCT/JP2019/051627 JP2019051627W WO2020179210A1 WO 2020179210 A1 WO2020179210 A1 WO 2020179210A1 JP 2019051627 W JP2019051627 W JP 2019051627W WO 2020179210 A1 WO2020179210 A1 WO 2020179210A1
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- film
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- 239000002887 superconductor Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 34
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 22
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 23
- 239000012528 membrane Substances 0.000 claims description 14
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 269
- 238000000034 method Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 18
- 238000001228 spectrum Methods 0.000 description 14
- 238000002441 X-ray diffraction Methods 0.000 description 13
- 230000010287 polarization Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000002003 electron diffraction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
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- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
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- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
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- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Definitions
- the present invention relates to a film structure provided with a buffer film capable of forming a single crystal piezoelectric film or superconductor film on a substrate by epitaxial growth, a piezoelectric film thereof, and a superconductor film thereof.
- MEMS sensor technology using piezoelectric materials such as PZT is particularly active, and can be applied to various applications such as a gyro sensor for automatic driving, a piezoelectric microphone, a high frequency filter for 5G communication and a vibration power generation element. It is widespread.
- piezoelectric materials are oxides, so it is difficult to single-crystallize the piezoelectric material by epitaxial growth when using a single-crystal Si substrate, for example. Therefore, for example, an oxide crystal such as YSZ (Yttria-stabilized zirconia) may be used as a buffer layer, but since such an oxide crystal is different from the crystal system of the piezoelectric material, it is buffered at the time of crystal formation of the piezoelectric material. There is a problem that it is difficult to obtain in-plane single crystallinity as a thin film because it is dragged by the crystal system of the layer. In addition, since the lattice constant is different for each piezoelectric material, it is necessary to study the structure of the buffer layer for each piezoelectric material, and it is difficult to select the buffer layer.
- YSZ Yttria-stabilized zirconia
- a film structure according to the present invention is formed on a substrate, a buffer film having a tetragonal crystal structure containing zirconia formed on the substrate, and formed on the buffer film.
- a film having a single crystal crystal structure can be formed on the film structure according to the present invention.
- FIG. 3 is a cross-sectional view of a substrate on which a buffer film according to the present invention is formed.
- FIG. 3 is a cross-sectional view of a substrate having a lower electrode formed on a buffer film according to the present invention.
- FIG. 3 is a cross-sectional view of a film structure including a buffer film according to the present invention.
- (A) is a STEM image obtained by observing a cross section of ZrO 2 as a buffer film 12 formed on the substrate 11
- (b) is an electron diffraction image of the substrate 11
- (b) is an buffer image.
- 3 is an electron diffraction image of the film 12.
- (a) is 1 nm
- (b) is 12 nm
- (c) is 15 nm
- (d) is 25 nm, which is a STEM image obtained by observing a cross section when formed.
- the result of having measured the ⁇ -2 ⁇ spectrum by XRD about the membrane structure 101 is shown.
- the conductive film 13 (a) is 10 nm, (b) is 20 nm, and (c) is 150 nm, which is a STEM image obtained by observing a cross section when formed.
- the result of having measured the ⁇ -2 ⁇ spectrum by the XRD method about the membrane structure 101 which concerns on Example 1 is shown.
- FIG. 3 shows a lattice image obtained by observing a cross section of PZT (30/70) as the piezoelectric film 14 according to Example 1 by STEM.
- (a) is a pole figure of the Si(220) plane
- (b) is a pole figure of the ZrO 2 (220) plane
- (c) is Pt(220).
- 2D is a pole figure of PZT (202).
- FIG. 5 is a diagram showing voltage dependence of polarization of the piezoelectric film 14 according to Example 1. The result of having measured the ⁇ -2 ⁇ spectrum by the XRD method about the membrane structure 101 which concerns on Example 2 is shown.
- (a) is a substrate 11
- (b) is a diagram showing an X-ray diffraction pattern of the piezoelectric film 14 by ⁇ scanning.
- the lattice image by STEM which observed the cross section of the BTO as the piezoelectric film 14 which concerns on Example 2 is shown.
- FIG. 5 is a diagram showing voltage dependence of polarization of the piezoelectric film 14 according to Example 2.
- FIG. 6 is a diagram showing the piezoelectricity of BTO as the piezoelectric film 14 according to Example 2. The result of having measured the ⁇ -2 ⁇ spectrum by the XRD method about the membrane structure 101 which concerns on Example 3 is shown.
- (a) is a substrate 11
- (b) is a diagram showing an X-ray diffraction pattern of the piezoelectric film 14 by ⁇ scanning.
- the lattice image by STEM which observed the cross section of the BFO as the piezoelectric film 14 which concerns on Example 3 is shown.
- FIG. FIG. 9 is a diagram showing the piezoelectricity of BFO as the piezoelectric film 14 according to Example 3.
- the result of measuring the Out-of-Plane ⁇ -2 ⁇ spectrum by the XRD method for the film structure 101 according to Example 4 is shown.
- FIG. 8 is a diagram showing voltage dependence of polarization of the piezoelectric film 14 according to Example 4.
- FIG. 8 is a diagram showing the piezoelectricity of BLT as the piezoelectric film 14 according to Example 4. The result of having measured the ⁇ -2 ⁇ spectrum by the XRD method about the membrane structure 101 which concerns on Example 5 is shown.
- FIG. 8 is a diagram showing an X-ray diffraction pattern of a film structure 101 according to Example 5 by ⁇ scanning. The result of having measured the ⁇ -2 ⁇ spectrum by the XRD method about the membrane structure 101 which concerns on Example 6 is shown.
- FIG. 9 is a diagram showing an X-ray diffraction pattern by ⁇ scanning of the film structure 101 according to Example 6. The result which observed the cross section of the buffer film 12 and the conductive film 13 about the sample which formed PZT (30/70) in Example 1 into a film by STEM is shown. The result which carried out STEM observation of the cross section of the buffer film 12 and the conductive film 13 about the sample which formed the BFO film which concerns on Example 3 is shown.
- hatching hatching (shading) attached to distinguish the structures may be omitted depending on the drawings.
- FIG. 1 is a cross-sectional view of a substrate on which a buffer film according to the present invention is formed. As shown in FIG. 1, the buffer film 12 is formed on the substrate 11.
- the substrate 11 is, for example, a silicon (Si) substrate.
- Si silicon
- SOI Silicon on Insulator
- substrate made of various semiconductor crystals other than Si substrate made of various oxide single crystals such as sapphire, garnet (Al 3 Fe 2 Si 3 O 12 ) substrate.
- it may be a glass substrate or the like having a polysilicon film formed on its surface.
- the substrate 11 may have any orientation, and if it is a Si substrate, for example, Si(100), Si(110), Si(111) or the like can be used.
- the buffer film 12 includes zirconia (ZrO 2 ) epitaxially grown on the substrate 11 and is composed of a film portion 12a and a protruding portion 12b. It is known that the crystal system of ZrO 2 undergoes a phase transition of monoclinic crystal ⁇ tetragonal crystal ⁇ cubic crystal due to the energy to be added, but in the present invention, the buffer film 12 has a tetragonal crystal structure.
- the buffer film 12 is preferably epitaxially grown according to the orientation of the substrate 11.
- the performance of the piezoelectric material improves when the crystal system is tetragonal or if it contains tetragonal crystals even if it is not tetragonal, and by providing tetragonal zirconium oxide as a buffer film, the piezoelectric material can be used. It is believed to act favorably on single crystal formation.
- Single crystal ZrO 2 contains a maximum of 8% of crystal defects, and if crystal defects are present, it is considered that vacancies of the defects and atoms in the vicinity have elastic force in the direction of reducing the lattice strain. .. It is considered that the degree of this elastic force is proportional to the pore concentration.
- the buffer film 12 according to the present invention can be made to function so as to make the crystal structure variable.
- the buffer film 12 has a protruding portion 12b.
- the formation of the protrusions 12b in this way means that when the raw material concentration is supersaturated during the process of forming the buffer film 12, it grows anisotropically along a certain axis or a certain edge of the crystal to form a pyramid structure. It is considered that this is due to the fact that the crystals grow while forming.
- the component of the buffer film 12 may include not only ZrO 2 but also a rare earth element or an alkaline earth element. Of these, ZrO 2 may contain oxygen defects. Further, a transition metal element such as Al, Sc, Mn, Fe, Co or Ni may be contained for improving the characteristics.
- the film portion 12a may be 10 nm or more, and the protruding portion 12b is 3 to 8 nm.
- FIG. 2 shows a cross-sectional view of a substrate on which a lower electrode is formed on the buffer film 12 shown in FIG.
- the lower electrode includes a conductive film 13 and a film 16 which are epitaxially grown on the buffer film 12.
- the conductive film 13 can be formed by using various metals, and for example, platinum group elements Ru, Rh, Pd, Os, Ir, and Pt can be used. It is known that these materials are physically and chemically similar to each other.
- the film 16 includes a composite oxide represented by the following general formula (Formula 1), and is, for example, strontium titanate (STO), ruthenate titanate ruthenate (STRO), or strontium ruthenate (SRO). Note that 0 ⁇ x ⁇ 1 is satisfied. Sr(Ti 1-x , Ru x )O 3 (Chemical formula 1)
- the lower electrode preferably has a flat surface, the conductive film 13 may be at least 20 nm, and the film 16 may be thinner than the conductive film 13.
- FIG. 3 shows a cross-sectional view of a film structure 101 according to the present invention, in which a piezoelectric film 14 and a conductive film 15 as an upper electrode are further formed on the substrate shown in FIG.
- the material of the piezoelectric film 14 is, for example, a perovskite oxide such as lead zirconate titanate (PZT) or barium titanate (BaTiO 3 ).
- a perovskite oxide such as lead zirconate titanate (PZT) or barium titanate (BaTiO 3 ).
- PZT lead zirconate titanate
- BaTiO 3 barium titanate
- trigonal lithium niobate (LiNbO 3 ) and lithium tantalate (LiTaO 3 ) can be used.
- hexagonal aluminum nitride (AlN) can be used.
- tungsten bronze type ferroelectric film or a bismuth layer structure ferroelectric film can be used as the piezoelectric film 14.
- the material having the crystal structure of the tungsten bronze type ferroelectric film is, for example, Ba 2 NaNb 5 O 15 .
- the bismuth layer structure ferroelectric is, for example, bismuth titanate (Bi 4 Ti 3 O 12 ).
- bismuth lanthanum titanate (Bi 4-x La x )Ti 3 O 12 (0 ⁇ x ⁇ 1) can be used.
- the yttrium-based superconductor such as YBa 2 Cu 3 O 7 (YBCO) having a perovskite structure or the bismuth-based material such as Bi 2 SrCa 2 Cu 3 O 10 (BSCCO) having a perovskite structure is not limited to the above-described piezoelectric film 14.
- the superconductor film 14 may be formed by using a superconductor as a material.
- the single crystal piezoelectric film 14 or the superconductor film 14 can be formed on the buffer film 12 by using the material for forming the piezoelectric film or the superconductor film as described above.
- a conductive film 15 is formed on the piezoelectric film 14.
- the conductive film 15 can be made of the same material as the conductive film 13.
- the film 16 can be expected to have effects such as enhancing the adhesion between the conductive film 13 and the piezoelectric film 14.
- Example 1-4 a (100)-oriented Si substrate was used as the substrate 11 to prepare the film structure 101 shown in FIG.
- Example 1 is PZT (30/70) (Pb (Zr 0.3 , Ti 0.7 ) O 3 )
- Example 2 is BTO (BaTIO 3 )
- Example 3 is BFO. (BiFeO 3 )
- BLT ((Bi 3.25 , La 0.75 )Ti 3 O 12 ) was used as a sputtering material to form a film.
- a ZrO 2 film was formed as the buffer film 12 on the substrate 11 by the electron beam evaporation method.
- the conditions at this time are shown below.
- Substrate temperature 600 ° C
- FIG. 4A is a STEM image obtained by observing a cross section of ZrO 2 formed as the buffer film 12 on the substrate 11.
- the lower diagram of FIG. 4B is an electron diffraction image of the substrate 11, and the upper diagram of FIG. 4B is an electron diffraction image of the buffer film 12.
- the buffer film 12 has a protrusion 12b having a pyramid-shaped surface, and is composed of the film 12a and the protrusion 12b.
- the buffer film 12 is an aggregate of fine ZrO 2 single crystals, and is epitaxially grown on the upper surface of the substrate 11.
- FIG. 5 shows cross-sectional views by the STEM of the buffer film 12 for each deposition time.
- 5 (a) shows the buffer film 12 formed at 1 nm
- FIG. 5 (b) shows the 12 nm formed
- FIG. 5 (c) shows the 15 nm formed
- FIG. 5 (d) shows the 25 nm formed.
- FIG. 5A it was found that the projection 12b was not formed immediately after the buffer film 12 was formed.
- the film formation time at this time is 3 seconds.
- a sample in which the buffer film 12 was formed was prepared for 1 minute, and its cross section was observed (FIG. 5B).
- FIG. 5B it was found that the heights of the protrusions 12b were not uniform.
- a sample in which the buffer film 12 was formed was prepared for 5 minutes, and the cross section thereof was observed (FIG. 5 (c)).
- the protrusion 12b had a more uniform height than the protrusion 12b shown in FIG. 5(b).
- FIG. 5D a sample in which the buffer film 12 was formed was prepared for 8 minutes, and the cross section was observed.
- the protruding portion 12b had a more uniform height than the protruding portion 12b shown in FIG. 5 (b) or (c).
- the heights of the protrusions 12b shown in FIGS. 5 (b) to 5 (d) are 2.2 nm in FIG. 5 (b) and 3 in FIG. 5 (c) when the average is calculated based on the images. It was .33 nm and 4.67 nm in FIG. 5 (d).
- the protrusion 12b has a quadrangular pyramid in shape, and the length of the diagonal line on the bottom surface is 3.3 nm in FIG. 5 (b), 5.0 nm in FIG. 5 (c), and FIG. 5 ( It was 7.0 nm in the case of d).
- the size of the quadrangular pyramid increased as the buffer film 12 was formed, and the height of the protrusion 12b increased with the film formation time.
- FIG. 5A the surface area of the buffer film 12 when the buffer film 12 is formed for 0.05 minutes (3 seconds) (FIG. 5A) is regarded as a flat surface, and the surface area is 1.0, FIG. The surface area of the buffer film 12 of 1) was 1.30 to 1.60 times.
- the film forming rate is calculated to be 3.33 [nm/sec] in FIG. 5A, 2.0 [nm/sec] in FIG. 5B, and 0 in FIG. 5C. It was .50 [nm / sec], 0.50 [nm / sec] in FIG. 5 (c), and 0.52 [nm / sec] in FIG. 5 (d). As described above, according to the film forming rate of the buffer film 12 for each film thickness, it was found that the film forming rate becomes constant when the film is thicker than 15 nm.
- FIG. 6 shows the result of measuring the ⁇ -2 ⁇ spectrum by XRD after forming the conductive film 13 and the film 16 by the method described later. .. As shown in FIG. 6, according to the position of the peak, it was found that the buffer film 12, ZrO 2, had a tetragonal crystal structure oriented in the (200) plane.
- a platinum (Pt) film was formed as the conductive film 13 on the buffer film 12 by a sputtering method.
- the conditions at this time are shown below.
- FIG. 7 is a STEM image obtained by observing a cross section of Pt as a conductive film 13 formed on the buffer film 12.
- FIG. 7A shows the conductive film 13 having a thickness of 10 nm
- FIG. 7B has a thickness of 20 nm
- FIG. 7C has a thickness of 150 nm.
- FIG. 7A it was found that the surface of the conductive film 13 was substantially flattened even with a film thickness of 10 nm. Then, as shown in FIG. 7B, the film thickness of 20 nm flattens the surface of the conductive film 13, and even if it is formed to 150 nm as it is, it remains flat as shown in FIG. 7C. ..
- SRO SrRuO 3
- the piezoelectric film 14 was formed on the film 16.
- the formation conditions are the same in Examples 1 to 4, but only the sputtering material is different.
- Example 1 the film structure 101 was formed as Si/ZrO 2 /Pt/SRO/PZ/Pt.
- the substrate 11 was made of Si(100).
- PZT (30/70) as the piezoelectric film 14
- the film thickness was 1.0 ⁇ m when measured by XRF using a fluorescent X-ray analyzer (AZX400) manufactured by Rigaku Corporation.
- FIG. 8 shows the result of measuring the ⁇ -2 ⁇ spectrum of the film structure 101 according to Example 1 by the XRD method. As shown in FIG. 8, it was found that PZT (30/70) was preferentially oriented to the c-axis. The lattice constant a and the lattice constant c were determined based on this X-ray diffraction pattern, and the c/a axis ratio was calculated to be 1.046.
- FIG. 9 is a cross section of the membrane structure 101, and shows a lattice image by STEM in which PZT (30/70) as the piezoelectric membrane 14 is observed. As shown in FIG. 9, the piezoelectric film 14 was confirmed to be a single crystal without any disorder of the crystal lattice such as transition.
- FIG. 10 shows the results of examining the in-plane orientation relationship of the film of each layer by measuring the pole figure by the XRD method for each layer in the film structure 101 according to Example 1.
- 10(a) is a pole figure of the Si(220) plane
- FIG. 10(b) is a pole figure of the ZrO 2 (220) plane
- FIG. 10(c) is a pole figure of Pt(220).
- 10D is a pole figure of the PZT (202).
- FIG. 11 is a graph showing the voltage dependence of polarization of the piezoelectric film 14 according to the first embodiment. As shown in FIG. 11, the piezoelectric film 14 according to Example 1 exhibited good characteristics, the remanent polarization Pr was 50 ⁇ C/cm 2 , and the coercive electric field Ec was 180 kV/cm. ..
- Example 2 In Example 2, the film was formed as Si/ZrO 2 /Pt/SRO/BTO.
- the substrate 11 was made of Si(100).
- BTO As the piezoelectric film 14, its film thickness was measured by XRF and found to be 1.0 ⁇ m.
- FIG. 12 shows the result of measuring the ⁇ -2 ⁇ spectrum of the membrane structure 101 according to Example 2 by the XRD method.
- the upper curve shows the result of Out-of-Plane measurement
- the lower curve shows the result of In-Plane measurement.
- the piezoelectric film 14 was preferentially oriented to the (001) plane. Further, when the a-axis length and the c-axis length of the piezoelectric film 14 were calculated from the measurement result, the a-axis was 0.4012 nm and the c-axis was 0.4262 nm. Therefore, the c/a ratio was 1.044, and it was found that the c-axis length was longer than the bulk value of 1.01.
- FIG. 13 is a diagram showing an X-ray diffraction pattern of the film structure 101 according to the second embodiment by ⁇ scanning.
- (A) is the substrate 11, and
- (b) is the pattern of the piezoelectric film 14.
- the piezoelectric film 14 has a symmetry axis four times at the same angle as the substrate 11, and the piezoelectric film 14 is formed of Cube-On-Cube.
- FIG. 14 is a cross-sectional view of the film structure 101 according to Example 2, and shows a lattice image by STEM of observing BTO as the piezoelectric film 14. As shown in FIG. 14, it was confirmed that the piezoelectric film 14 was a single crystal without any disorder of the crystal lattice such as transition.
- FIG. 15 is a graph showing the voltage dependence of the polarization of the piezoelectric film 14. As shown in FIG. 15, the piezoelectric film 14 according to Example 2 exhibited ferroelectricity.
- FIG. 16 shows the piezoelectricity of the piezoelectric film 14 confirmed with a d33 meter.
- the d33 meter is a d33 constant measuring device (model: LTFA-01) manufactured by Reed Techno Co., Ltd., and can measure d33 without the conductive film 15 as an upper electrode. Specifically, a force is applied to the film structure 101 to detect a change in the amount of charge with an integrating circuit. If piezoelectricity is provided, a force is applied at regular time intervals as shown in FIG. Alternatively, a pulse-shaped waveform can be observed without application. The d33 value at this time was 24.88 (pC / N).
- Example 3 In Example 3, the film was formed as Si/ZrO 2 /Pt/SRO/BFO.
- the substrate 11 was made of Si(100).
- BFO As the piezoelectric film 14, the film thickness measured by XRF was 2.1 ⁇ m.
- FIG. 17 shows the result of measuring the ⁇ -2 ⁇ spectrum of the film structure 101 according to Example 3 by the XRD method.
- the upper curve shows the result of Out-of-Plane measurement
- the lower curve shows the result of In-Plane measurement.
- the piezoelectric film 14 was preferentially oriented to the (001) plane.
- FIG. 18 is a diagram showing an X-ray diffraction pattern by ⁇ scan.
- (A) is the substrate 11, and (b) is the pattern of the piezoelectric film 14.
- the piezoelectric film 14 As can be seen from FIG. 18, after the piezoelectric film 14 is formed, it has a symmetry axis four times at the same angle as the substrate 11, and the piezoelectric film 14 is formed of Cube-On-Cube. all right.
- FIG. 19 is a cross-sectional view of the film structure 101 and shows a lattice image obtained by observing BFO as the piezoelectric film 14 by STEM. As shown in FIG. 19, it was confirmed that the piezoelectric film 14 was a single crystal without any disorder of the crystal lattice such as transition.
- FIG. 20 is a graph showing the voltage dependence of polarization of the piezoelectric film 14. As shown in FIG. 20, the piezoelectric film 14 according to Example 3 showed good characteristics, the remanent polarization Pr was 60 ⁇ C/cm 2 , and the coercive electric field Ec was 100 kV/cm. ..
- FIG. 21 is a diagram showing the measurement result of the piezoelectric film 14 by the d33 meter. As shown in FIG. 21, it was found that the piezoelectric film 14 has piezoelectricity. The d33 value at this time was 16.69 (pC / N).
- Example 4 In Example 4, the film was formed as Si/ZrO 2 /Pt/SRO/BLT.
- the substrate 11 was made of Si(100).
- the film thickness was measured by XRF and found to be 1.0 ⁇ m.
- FIG. 22 shows the result of measuring the ⁇ -2 ⁇ spectrum of the film structure 101 according to Example 4 by the XRD method.
- FIG. 22 shows the result of Out-of-Plane measurement. As shown in FIG. 22, the piezoelectric film 14 was preferentially oriented to the (001) plane.
- FIG. 23 is a diagram showing an X-ray diffraction pattern by ⁇ scan.
- (A) is the substrate 11, and
- (b) is a pattern in which even the piezoelectric film body 14 is formed.
- FIG. 24 after the piezoelectric film 14 was formed, it had a 4-fold symmetry axis at the same angle as the substrate 11, and was formed of Cube-On-Cube.
- FIG. 24 is a cross-section of the film structure 101 and shows a lattice image obtained by observing BLT as the piezoelectric film 14 by STEM. As shown in FIG. 24, it was confirmed that the piezoelectric film 14 was a single crystal without any disorder of the crystal lattice such as transition.
- W1 is a perovskite layer and W2 is a bismuth oxide layer.
- FIG. 25 is a graph showing the voltage dependence of the polarization of the piezoelectric film 14. As shown in FIG. 25, the piezoelectric film 14 according to Example 4 exhibited ferroelectricity, the residual polarization Pr was 4 ⁇ C/cm 2 , and the coercive electric field Ec was 4.5 kV/cm. ..
- FIG. 26 is a diagram showing a measurement result of the piezoelectric film 14 by a d33 meter. As shown in FIG. 26, it was found that the piezoelectric film 14 has piezoelectricity. The d33 value at this time was 164.7 (pC / N).
- Example 5 In Example 5, the film was formed as Si/ZrO 2 /Pt/SRO/PZT. As the substrate 11, Si(111) was used. After forming PZT as the piezoelectric film 14, the film thickness was measured by XRF and found to be 1.0 ⁇ m. A Pb/Zr/Ti (130/52/48) target was used as the PZT material.
- FIG. 27 shows the result of measuring the ⁇ -2 ⁇ spectrum of the sample prepared in Example 5 by the XRD method. As shown in FIG. 27, the substrate 11, the buffer film 12, the conductive film 13, and the piezoelectric film 14 were all oriented in the (111) plane.
- FIG. 28 shows the result of ⁇ scan by the XRD method in which the (111) plane was measured as a diffraction plane in the sample prepared in Example 5.
- the substrate 11, the conductive film 13, and the piezoelectric film 14 showed symmetry three times.
- the peak of the conductive film 13 is shifted by 60°, it is a single crystal film epitaxially grown, and the piezoelectric film 14 is also a single crystal film epitaxially grown.
- Example 6 In Example 6, the film was formed as Si/ZrO 2 /Pt/SRO/PZT.
- the substrate 11 was made of Si(110).
- PZT as the piezoelectric film 14
- the film thickness was measured by XRF and found to be 1.0 ⁇ m.
- a Pb/Zr/Ti (130/52/48) target was used as the PZT material.
- FIG. 29 shows the result of measuring the ⁇ -2 ⁇ spectrum of the sample prepared in Example 2 by the XRD method. As shown in FIG. 29, the substrate 11 and the conductive film 13 were preferentially oriented to the (110) plane.
- FIG. 30 shows the result of ⁇ scan by the XRD method in which the sample prepared in Example 6 was measured with the (111) plane as a diffraction plane.
- the substrate 11, the conductive film 13, and the piezoelectric film 14 showed symmetry twice. As a result, it can be said that the piezoelectric film 14 is an epitaxially grown single crystal film.
- the buffer film 12 is epitaxially grown according to the orientation of the substrate 11, and the various piezoelectric films 14 formed thereon are also epitaxially grown. It is considered that this is because, as described below, after the buffer film 12 is formed, the crystal structure of the buffer film 12 changes according to the piezoelectric material formed on the buffer film 12.
- FIG. 31 shows the results of STEM observation of the cross sections of the buffer film 12 and the conductive film 13 for the sample on which PZT (30/70) was formed according to Example 1. As shown in FIG. 31A, the length between the protrusions 12b was 4.2 nm. FIG.31(b) is the figure which expanded the protrusion part 12b.
- FIG. 32 shows the results of STEM observation of the cross sections of the buffer film 12 and the conductive film 13 of the sample on which the BFO according to Example 3 was formed. As shown in FIG. 32(a), the length between the protrusions 12b was 3.9 nm. FIG. 32(b) is an enlarged view of the protrusion 12b.
- FIG. 33 shows the result of STEM observation of the cross sections of the buffer film 12 and the conductive film 13 for the sample on which the BLT according to Example 4 was formed. As shown in FIG. 33A, the length between the protrusions 12b was 5.5 nm. FIG. 33B is an enlarged view of the protrusion 12b.
- the height of the protrusion 12b changes according to the lattice constant of the piezoelectric film 14.
- the lattice constant of the a-axis of the BFO shown in FIG. 32 is 0.3971 nm, which is the shortest as compared with the PZT of FIG. 31 and the BLT of FIG. 33.
- the height of the protrusion 12b is 6.3 nm, and the protrusion 12b moves upward in accordance with the BFO having a short lattice constant in the process of forming the BFO that is the piezoelectric film 14. It is considered to be stretching.
- the lattice constant of the a-axis of the BLT shown in FIG. 33 is 0.5411 nm, which is the longest as compared with the PZT of FIG. 31 and the BFO of FIG. 32.
- the height of the protruding portion 12b is 2.8 nm, and the protruding portion 12b is moved downward in accordance with the BLT having a long lattice spacing in the film forming process of the BLT which is the piezoelectric film 14. It is thought to have been crushed.
- FIG. 34 (a) is a lattice image showing a cross section of the interface between the conductive film 13 and the film 16 when the BFO is formed
- FIG. 34 (b) shows the conductive film 13 and the film 16 when the BLT is formed. It is a lattice image which shows the cross section of an interface.
- the molecular spacing between the conductive film 13 and the film 16 when the BLT was formed was the conductive film 13 and the film 16 when the BFO was formed. It is longer than the molecular spacing of.
- Example 7 In Example 7, the film was formed as Si/ZrO 2 /Pt/SRO/AlN.
- the substrate 11 was made of Si(100).
- the manufacturing conditions up to the SRO film are the same as in Example 1-6.
- AlN was formed under the following conditions.
- FIG. 35 shows a result of measuring an X-ray diffraction pattern obtained by ⁇ -scanning AlN by the XRD method for the film structure 101 according to Example 7. As shown in FIG. 35, it was found that the AlN film exhibited 6-fold symmetry, had a single orientation in (0001), and was single crystallized. Note that the circled numbers 1 and 2 shown in FIG. 35 indicate that they are rotated 90° in the plane.
- Example 8 the film was formed as Si/ZrO 2 /Pt/SRO/LiNbO 3 (LN).
- the substrate 11 was made of Si(100).
- the manufacturing conditions up to the SRO film are the same as in Example 1-6.
- LN was formed under the following conditions. Equipment: RF magnetron sputtering equipment Power: 160W Gas: Ar/O 2 ratio 2% Pressure: 0.8Pa Deposition time: 9 hours Substrate temperature: 400°C
- FIG. 36 shows the result of measuring the X-ray diffraction pattern of the film structure 101 according to Example 8 in which LN was ⁇ -scanned by the XRD method. As shown in FIG. 35, it was found that the LN film exhibited four-fold symmetry, had a single (001) orientation, and was single-crystallized.
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Abstract
Description
図1は、本願発明に係るバッファ膜が形成された基板の断面図である。図1に示すように、基板11上にバッファ膜12が形成される。
Sr(Ti1-x,Rux)O3 … (化1)
装置 : 電子ビーム蒸着装置
圧力 : 7.0×10-3Pa
蒸着源 : Zr+O2
O2流量 :10sccm
加速電圧/エミッション電流 : 7.5kV/1.8mA
厚さ : 25nm
基板温度 : 600℃
装置 : DCスパッタリング装置
圧力 : 1.2×10-1Pa
蒸着源 : Pt
電力 : 100W
厚さ : 150nm
基板温度 : 450~600℃
装置 : RFマグネトロンスパッタリング装置
パワー : 300W
ガス : Ar
圧力 : 1.8Pa
厚さ : 20nm
基板温度 : 600℃
装置 : RFマグネトロンスパッタリング装置
材料 :[実施例1:PZT(30/70)]Pb(Zr0.3,Ti0.7)O3、
[実施例2:BTO]BaTiO3、
[実施例3:BFO]BiFeO3、
[実施例4:BLT](Bi3.25,La0.75)Ti3O12
パワー : 1500W
ガス : Ar/O2
圧力 : 1.0Pa
基板温度 : 450℃
実施例1では、膜構造体101として、Si/ZrO2/Pt/SRO/PZ/Ptのように成膜した。基板11は、Si(100)を用いた。なお圧電体膜14としてのPZT(30/70)を形成後、その膜厚を、リガク社製蛍光X線分析装置(AZX400)を用いてXRFで測定したところ、1.0μmであった。
実施例2では、Si/ZrO2/Pt/SRO/BTOのように成膜した。基板11は、Si(100)を用いた。なお圧電体膜14としてのBTOを形成後、その膜厚をXRFで測定したところ、1.0μmであった。
実施例3では、Si/ZrO2/Pt/SRO/BFOのように成膜した。基板11は、Si(100)を用いた。なお圧電体膜14としてのBFOを形成後、その膜厚をXRFで測定したところ、2.1μmであった。
実施例4では、Si/ZrO2/Pt/SRO/BLTのように成膜した。基板11は、Si(100)を用いた。なお圧電体膜14としてのBLTを形成後、その膜厚をXRFで測定したところ、1.0μmであった。
実施例5では、Si/ZrO2/Pt/SRO/PZTのように成膜した。基板11は、Si(111)を用いた。なお圧電体膜14としてのPZTを形成後、その膜厚をXRFで測定したところ、1.0μmであった。なお、PZTの材料として、Pb/Zr/Ti(130/52/48)のターゲットを使用した。
実施例6では、Si/ZrO2/Pt/SRO/PZTのように成膜した。基板11は、Si(110)を用いた。なお圧電体膜14としてのPZTを形成後、その膜厚をXRFで測定したところ、1.0μmであった。なお、PZTの材料として、Pb/Zr/Ti(130/52/48)のターゲットを使用した。
実施例7では、Si/ZrO2/Pt/SRO/AlNのように成膜した。基板11は、Si(100)を用いた。SRO膜までの製造条件は、実施例1-6と同じである。AlNは次の条件で成膜した。
装置 : RFマグネトロンスパッタリング装置
パワー : 200W
ガス : Ar
圧力 : 0.5Pa
成膜時間 : 60分
基板温度 : 200℃
実施例8では、Si/ZrO2/Pt/SRO/LiNbO3(LN)のように成膜した。基板11は、Si(100)を用いた。SRO膜までの製造条件は、実施例1-6と同じである。LNは次の条件で成膜した。
装置 : RFマグネトロンスパッタリング装置
パワー : 160W
ガス : Ar/O2比 2%
圧力 : 0.8Pa
成膜時間 : 9時間
基板温度 : 400℃
12 バッファ膜
12a 膜部
12b 突出部
13、15 導電膜
14 圧電体膜/超伝導体膜
16 膜
101 膜構造体
Claims (22)
- 基板と、
前記基板上に形成された、ジルコニアを含む正方晶の結晶構造を有するバッファ膜と、
前記バッファ膜上に形成される、エピタキシャル成長した白金族元素を含む金属膜と、
前記金属膜上に形成される、エピタキシャル成長したSr(Ti1-x,Rux)O3を含む膜と、(0≦x≦1)
を備える、膜構造体。 - 前記金属膜の厚みが20~150nmである、
請求項1に記載の膜構造体。 - 前記バッファ膜が、希土類元素又はアルカリ土類元素をさらに含む、請求項1又は2に記載の膜構造体。
- 前記バッファ膜の表面積が、平面と比べて1.30~1.60である、
請求項1乃至3のうちのいずれか1項に記載の膜構造体。 - 前記基板が、(100)面、(110)面、または(111)面に配向している、
請求項1乃至4のうちのいずれか1項に記載の膜構造体。 - 前記バッファ膜は、前記基板の配向に従ってエピタキシャル成長する、
請求項1乃至5のうちのいずれか1項に記載の膜構造体。 - 請求項1乃至6のうちのいずれか1項に記載の前記膜上に形成される単結晶の圧電体膜。
- 三方晶系の結晶構造を有する、請求項7に記載の圧電体膜。
- 材料が、BiFeO3、LiNbO3、またはLiTaO3である、請求項8に記載の圧電体膜。
- 六方晶系の結晶構造を有する、請求項7に記載の圧電体膜。
- 材料がAlNである、請求項10に記載の圧電体膜。
- タングステンブロンズ型の結晶構造を有する、請求項7に記載の圧電体膜。
- ビスマス層状型の結晶構造を有する、請求項7に記載の圧電体膜。
- 材料が、Bi4Ti3O12または(Bi4-xLax)Ti3O12(0≦x<1)である、請求項13に記載の圧電体膜。
- ABO3で表されるペロブスカイト型酸化物である、請求項7に記載の圧電体膜。
- 材料が、チタン酸ジルコン酸鉛である、請求項7に記載の圧電体膜。
- 前記チタン酸ジルコン酸鉛が、Pb(Zr0.3,Ti0.7)O3である、請求項16に記載の圧電体膜。
- 請求項1乃至6のうちのいずれか1項に記載の前記膜上に形成される単結晶の超伝導体膜。
- ビスマス系超伝導体である、請求項18に記載の超伝導体膜。
- 材料が、Bi2SrCa2Cu3O10である、請求項19に記載の超伝導体膜。
- イットリウム系超伝導体である、請求項18に記載の超伝導体膜。
- 前記イットリウム系超伝導体の材料が、YBa2Cu3O7である、請求項21に記載の超伝導体膜。
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