WO2020134252A1 - Matériau composite, film mince et son procédé de préparation et diode électroluminescente à points quantiques - Google Patents

Matériau composite, film mince et son procédé de préparation et diode électroluminescente à points quantiques Download PDF

Info

Publication number
WO2020134252A1
WO2020134252A1 PCT/CN2019/108154 CN2019108154W WO2020134252A1 WO 2020134252 A1 WO2020134252 A1 WO 2020134252A1 CN 2019108154 W CN2019108154 W CN 2019108154W WO 2020134252 A1 WO2020134252 A1 WO 2020134252A1
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
mixed solution
substrate
quantum dot
composite material
Prior art date
Application number
PCT/CN2019/108154
Other languages
English (en)
Chinese (zh)
Inventor
张涛
向超宇
朱佩
罗植天
Original Assignee
Tcl科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tcl科技集团股份有限公司 filed Critical Tcl科技集团股份有限公司
Publication of WO2020134252A1 publication Critical patent/WO2020134252A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Definitions

  • the present application belongs to the field of display technology, and particularly relates to a composite material, a film and a preparation method thereof, and a quantum dot light-emitting diode.
  • a method for manufacturing a quantum dot light-emitting diode including the following steps:
  • nano-zinc oxide and graphene are dispersed in an organic solvent, mixed and then subjected to ultrasonic treatment to obtain a mixed solution;
  • a first substrate is provided, the mixed solution is deposited on the surface of the first substrate, dried to form a film, and an electron transport layer is prepared.
  • the composite material provided in this application uses nano-zinc oxide as the main body of the material, and at the same time, graphene material is compounded.
  • the work function (-4.42eV) is lower than the nano-zinc oxide conduction band (-4.05eV).
  • the composite material of nano-zinc oxide and an appropriate amount of graphene is used as the material of the electron transport layer of the quantum dot light-emitting device, the electron can be further transferred to the valence band of the quantum dot, the probability of exciton quenching can be reduced, and the luminous efficiency of the device can be improved.
  • the amount of graphene added in the composite material is not as large as possible.
  • the weight percentage of the graphene is 0.1% to 10%, and the resulting composite material can be effective when used as an electron transport material for a light emitting diode It avoids the further transmission of electrons to the valence band of quantum dots, reduces the chance of exciton quenching, and improves the luminous efficiency of the device.
  • the graphene content is excessive, the excessive graphene incorporated into the nano-zinc oxide will significantly reduce the nano-zinc oxide's Fermi energy level, promote the transfer of electrons at the interface from the nano-zinc oxide to the quantum dot light-emitting layer, and destroy the quantum dot light emission
  • the charge balance in the diode reduces the luminous efficiency of the device.
  • the thin film and thin film material provided by the present application are composite materials of the above nano zinc oxide and graphene. Therefore, when the thin film is used as an electron transport layer of a light-emitting diode, it can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the preparation method of the thin film provided by the present application is to disperse graphene and nano-zinc oxide in an organic solvent according to the amount ratio, and after mixing, disperse it ultrasonically, deposit the obtained mixed solution on the target substrate surface of the thin film to be deposited, and then dry it. get.
  • This method is not only simple and easy to operate, but when the resulting thin film is used as an electron transport layer of a light emitting diode, it can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the quantum dot light emitting diode provided by the present application includes an electron transport layer, and the material of the electron transport layer is a composite material of the above-mentioned nano zinc oxide and graphene.
  • the quantum dot light-emitting diode thus obtained can effectively prevent electrons from further transmitting to the valence band of the quantum dot, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the preparation method of the quantum dot light-emitting diode provided by the present application disperses graphene and nano-zinc oxide in an organic solvent according to the amount ratio, mixes and disperses ultrasonically, and deposits the obtained mixed solution on the surface of the first substrate of the thin film to be deposited.
  • the electron transport layer can be obtained by drying. The method is not only simple and easy to operate, but also the obtained electron transport layer can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the
  • An embodiment of the present application provides a composite material, the composite material is nano-zinc oxide and graphene, and based on the total weight of the composite material is 100%, the weight percentage content of the graphene is 0.1% ⁇ 10%.
  • the composite material provided by the embodiment of the present application uses nano-zinc oxide as the main body of the material, and at the same time, graphene material is compounded.
  • the work function (-4.42eV) is lower than the nano-zinc oxide conduction band (-4.05eV).
  • the electron can be further transferred to the valence band of the quantum dot, the probability of exciton quenching can be reduced, and the luminous efficiency of the device can be improved.
  • the more graphene is added in the composite material the better.
  • the weight percentage of the graphene is 0.1% to 10%, and the resulting composite material can be effective when used as an electron transport material for a light emitting diode It avoids the further transmission of electrons to the valence band of quantum dots, reduces the chance of exciton quenching, and improves the luminous efficiency of the device.
  • the graphene content is excessive, the excessive graphene incorporated into the nano-zinc oxide will significantly reduce the nano-zinc oxide's Fermi energy level, promote the transfer of electrons at the interface from the nano-zinc oxide to the quantum dot light-emitting layer, and destroy the quantum dot light emission
  • the charge balance in the diode reduces the luminous efficiency of the device.
  • the composite material of nano-zinc oxide and an appropriate amount of graphene is used as the electron transport layer material of the quantum dot light-emitting device, the valence band of further electron transmission to the quantum dot can be better avoided, reducing the probability of exciton quenching and improving Device luminous efficiency.
  • An embodiment of the present application provides a film, the material of the film includes a composite material, the composite material is nano-zinc oxide and graphene, and based on the total weight of the composite material is 100%, the graphene The weight percentage is 0.1% ⁇ 10%.
  • the film material is a composite material of the foregoing nano zinc oxide and graphene. Therefore, when the thin film is used as an electron transport layer of a light-emitting diode, it can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the weight percentage of the graphene is 3% to 10%, so that when the thin film is used as an electron transport layer, It can avoid the further transmission of electrons to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the weight percentage of graphene is distributed along a gradient perpendicular to the film.
  • the thin film is used as an electron transport layer of a light emitting device, especially a quantum dot light emitting diode, along the direction of the light emitting layer such as the quantum dot light emitting layer to the cathode, the graphene concentration in the thin film gradually increases to form graphite Graphene/ZnO composite electron transport layer with a gradient distribution of olefins. At this time, the concentration of ZnO at the end near the quantum dot light emitting layer is high.
  • the film provided in the examples of the present application can be prepared by the following method.
  • the embodiment of the present application provides a method for preparing a thin film, including the following steps:
  • nano-zinc oxide and graphene are dispersed in an organic solvent, mixed and subjected to ultrasonic treatment to obtain a mixed solution;
  • the mixed solution is deposited on the surface of the substrate and dried to form a film.
  • graphene and nano-zinc oxide are dispersed in an organic solvent according to the amount ratio, and after mixing, they are ultrasonically dispersed, and the resulting mixed solution is deposited on the target substrate surface of the thin film to be deposited, and dried To get it.
  • This method is not only simple and easy to operate, but when the resulting thin film is used as an electron transport layer of a light emitting diode, it can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • both the nano-zinc oxide and the graphene can be prepared by reference to existing methods.
  • the preparation method of zinc oxide is: dissolving zinc acetate in dimethyl sulfoxide, dissolving tetramethyl ammonium hydroxide in ethanol, and then mixing and processing, stirring the reaction at room temperature; adding acetic acid after the reaction Ethyl acetate, remove the supernatant after centrifugation; add ethanolamine and ethanol to stabilize the nanoparticles after collecting the precipitate, then wash with ethyl acetate, centrifuge to remove the supernatant, and dry to obtain ZnO nanoparticles.
  • the method for preparing graphene is: using a hummer method to prepare graphene oxide, and then reducing the graphene oxide with hydrazine hydrate to obtain graphene.
  • an organic solution of graphene and an organic solution of nano-zinc oxide are provided separately. According to a ratio of 0.1% to 10% of the total weight of graphene and nano-zinc oxide, the organic solution and nano-graphene of graphene The organic solution of zinc oxide is mixed.
  • the solvent in the organic solution of graphene can be an organic solvent that can effectively disperse graphene, in some embodiments, organic alcohols; the solvent in the organic solution of nano-zinc oxide can effectively disperse nano-oxide
  • the organic solvents of zinc and graphene are, in some embodiments, organic alcohols.
  • the solvent in the organic solution of graphene and the solvent in the organic solution of nano-zinc oxide are both ethanol.
  • graphene and nano-zinc oxide are provided separately, and the graphene and nano-zinc oxide are dispersed in an organic solvent and subjected to mixing treatment.
  • the organic solvent is an organic solvent that can effectively disperse nano-zinc oxide and graphene at the same time, in some embodiments, organic alcohols, and in some embodiments, ethanol.
  • the nano-zinc oxide and graphene After dispersing the nano-zinc oxide and graphene in an organic solvent, they are mixed and processed. In order to make the two dispersed evenly, the obtained dispersion system was sonicated. In some embodiments, ultrasound is performed in a natural state for 4 to 6 hours to obtain a mixed solution.
  • depositing the mixed solution on the surface of the substrate can be achieved by a conventional solution processing method, such as inkjet printing, spin coating, and the like. Further, the film is formed after drying treatment.
  • the substrate is any substrate that needs to deposit the mixed solution.
  • the substrate may be laminated Anode/quantum dot light emitting layer stack, anode/hole function layer/quantum dot light emitting layer stack, cathode, cathode/electron injection layer stack.
  • the mixed solution is deposited on the surface of the substrate, and the method of drying the film is:
  • the temperature of the bottom plate is 60°C to 80°C
  • the temperature of the top plate is 80°C to 120°C.
  • the temperature difference between the bottom plate and the top plate is greater than or equal to 20°C.
  • a temperature gradient is formed.
  • the zinc oxide nanoparticles supported on the graphene by physical adsorption will form from the top (side close to the top plate) to the bottom (close to the top plate)
  • a composite graphene/ZnO thin film with a low nano zinc oxide concentration on the top and a high nano zinc oxide concentration on the bottom is formed.
  • the mixed solution is deposited on the surface of the substrate, and the method of drying the film is:
  • the mixed solution is deposited on the surface of the substrate, the substrate on which the mixed solution is deposited is placed on a hot plate, and heat treatment is performed under the condition that the hot plate is connected with a positive voltage to prepare a thin film.
  • an embodiment of the present application further provides a quantum dot light-emitting diode, including an anode 1 and a cathode 6 disposed oppositely, a quantum dot light-emitting layer 4 disposed between the anode 1 and the cathode 6, and a cathode disposed 6 and the electron transport layer 5 between the quantum dot light emitting layer 4, wherein the material of the electron transport layer 5 is the composite material described in the embodiments of the present application, or the electron transport layer 5 is the thin film described in the embodiments of the present application.
  • the quantum dot light emitting diode provided by the embodiment of the present application includes an electron transport layer, and the material of the electron transport layer is a composite material of the above-mentioned nano zinc oxide and graphene.
  • the quantum dot light-emitting diode thus obtained can effectively prevent electrons from further transmitting to the valence band of the quantum dot, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the quantum dot light emitting diode further includes at least one of a hole functional layer and a hole injection layer disposed between the anode 1 and the quantum dot light emitting layer 4.
  • the quantum dot light emitting diode includes a hole function layer 2 disposed between the anode 1 and the quantum dot light emitting layer 4.
  • the quantum dot light emitting diode includes a hole injection layer 3 disposed between the anode 1 and the quantum dot light emitting layer 4.
  • the quantum dot light emitting diode includes a hole function layer 2 disposed between the anode 1 and the quantum dot light emitting layer 4, and a space disposed between the hole transport layer 2 and the quantum dot light emitting layer 4 Hole injection layer 3.
  • the quantum dot light emitting diode further includes an electron injection layer (not shown in the figure) disposed between the cathode 6 and the electron transport layer 5.
  • the embodiments of the present application provide a method for manufacturing a quantum dot light emitting diode, including the following steps:
  • nano-zinc oxide and graphene are dispersed in an organic solvent, mixed and then subjected to ultrasonic treatment to obtain a mixed solution;
  • a first substrate is provided, the mixed solution is deposited on the surface of the first substrate, dried to form a film, and an electron transport layer is prepared.
  • the preparation method of the quantum dot light-emitting diode provided in the embodiment of the present application disperses graphene and nano-zinc oxide in an organic solvent according to the amount ratio, and after mixing, disperses ultrasonically to deposit the resulting mixed solution on the surface of the first substrate of the thin film to be deposited After drying, the electron transport layer can be obtained.
  • the method is not only simple and easy to operate, but also the obtained electron transport layer can effectively prevent electrons from further transmitting to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.
  • the steps for preparing the electron transport layer on the surface of the first substrate and the preferred situations thereof are as described above. In order to save space, they will not be repeated here.
  • the first substrate includes an anode, and a quantum dot light emitting layer provided on the anode.
  • the first substrate further includes a hole function layer disposed between the anode and the quantum dot light emitting layer.
  • the hole functional layer includes but is not limited to at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the anode is an anode disposed on the substrate.
  • the electron transport layer after preparing the electron transport layer, it further includes preparing a cathode on the surface of the electron transport layer facing away from the quantum dot light emitting layer. In some embodiments, before preparing the cathode, it further includes preparing an electron injection layer on the surface of the electron transport layer facing away from the quantum dot light emitting layer.
  • the method further includes preparing a quantum dot light-emitting layer on the surface of the electron transport layer facing away from the cathode, and preparing an anode on the surface of the quantum dot light-emitting layer facing away from the cathode.
  • the anode before preparing the anode, it further includes preparing a hole function layer on the surface of the quantum dot light-emitting layer facing away from the cathode.
  • the hole functional layer includes but is not limited to at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • a quantum dot light-emitting diode includes a substrate, an anode and a cathode provided on the substrate, and a laminated structure provided between the anode and the cathode, the laminated structure includes a layered hole injection layer -A hole transport layer-a quantum dot light emitting layer-an electron transport layer, wherein the hole injection layer is disposed adjacent to the anode, and the electron transport layer is disposed adjacent to the cathode.
  • the preparation method of the quantum dot light-emitting diode includes the following steps:
  • the graphene/ZnO composite material solution is spin-coated on the quantum dot light-emitting layer, and is placed in a heatable device, wherein the heatable device includes a bottom plate and a top plate that are opposite and arranged in parallel, and the mixture is deposited
  • the substrate of the solution is placed in the sealable device parallel to the bottom plate.
  • Heat-treating the sealable device so that the heating temperature of the bottom plate is 60°C and the heating temperature of the top plate is 80°C, and after drying, a composite graphene/ZnO electron transport layer with a low ZnO concentration at the top and a high ZnO concentration at the bottom is formed;
  • the cathode is deposited on the electron transport layer, and the device preparation is completed after packaging.
  • Example 1 The difference from Example 1 is that the heating temperature of the bottom plate is 60° C., the heating temperature of the top plate is 100° C., and the height between the bottom plate and the top plate is h.
  • the substrate is placed between h/3 ⁇ 2h/3.
  • Example 1 The difference from Example 1 is that the heating temperature of the bottom plate is 60° C., the heating temperature of the top plate is 120° C., and the height between the bottom plate and the top plate is h.
  • the substrate is placed between h/3 ⁇ 2h/3.
  • Example 1 The difference from Example 1 is that the heating temperature of the bottom plate is 70° C., the heating temperature of the top plate is 90° C., and the height between the bottom plate and the top plate is calculated as h.
  • the substrate is placed between h/3 ⁇ 2h/3.
  • Example 2 The difference from Example 1 is that the heating temperature of the bottom plate is 70° C., the heating temperature of the top plate is 105° C., and the height between the bottom plate and the top plate is h, and the mixed solution deposited The substrate is placed between h/3 ⁇ 2h/3.
  • Example 1 The difference from Example 1 is that the heating temperature of the bottom plate is 70° C., the heating temperature of the top plate is 120° C., and the height between the bottom plate and the top plate is h.
  • the substrate is placed between h/3 ⁇ 2h/3.
  • Example 1 The difference from Example 1 is that the heating temperature of the bottom plate is 80° C., the heating temperature of the top plate is 120° C., and the height between the bottom plate and the top plate is h.
  • the substrate is placed between h/3 ⁇ 2h/3.
  • a quantum dot light-emitting diode includes a substrate, an anode and a cathode provided on the substrate, and a laminated structure provided between the anode and the cathode, the laminated structure includes a layered hole injection layer -A hole transport layer-a quantum dot light emitting layer-an electron transport layer, wherein the hole injection layer is disposed adjacent to the anode, and the electron transport layer is disposed adjacent to the cathode.
  • the preparation method of the quantum dot light-emitting diode includes the following steps:
  • the graphene/ZnO composite material solution was spin-coated on the quantum dot light-emitting layer, placed on a hot plate, and the positive temperature of the external plate was heated at a temperature of 80° C. After drying, the top ZnO concentration was low after drying 1. Electron transport layer of composite graphene/ZnO with high ZnO concentration at the bottom;
  • Example 2 The difference from Example 2 is that the graphene/ZnO composite material solution is spin-coated on the quantum dot light-emitting layer, placed on a hot plate, and a positive voltage is connected to the hot plate at a temperature of 120°C Under heating, after drying, a composite graphene/ZnO electron transport layer with a low ZnO concentration at the top and a high ZnO concentration at the bottom is formed.

Abstract

La présente invention concerne un matériau composite. Le matériau composite est de l'oxyde de nano-zinc et du graphène, et par rapport à un poids total du matériau composite de 100 %, la teneur en graphène est de 0,1 % à 10 % en fonction du pourcentage en poids. Lorsque le matériau composite d'oxyde de nano-zinc et une quantité correcte de graphène est utilisé en tant que matériau pour une couche de transfert d'électrons d'un dispositif électroluminescent à points quantiques, on évite aux électrons d'être transférés davantage vers une bande de valence de points quantiques, réduisant ainsi la possibilité d'annihilation d'excitons et améliorant l'efficacité lumineuse du dispositif.
PCT/CN2019/108154 2018-12-28 2019-09-26 Matériau composite, film mince et son procédé de préparation et diode électroluminescente à points quantiques WO2020134252A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811624179.2 2018-12-28
CN201811624179.2A CN111384298B (zh) 2018-12-28 2018-12-28 复合材料、薄膜及其制备方法、量子点发光二极管

Publications (1)

Publication Number Publication Date
WO2020134252A1 true WO2020134252A1 (fr) 2020-07-02

Family

ID=71126128

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/108154 WO2020134252A1 (fr) 2018-12-28 2019-09-26 Matériau composite, film mince et son procédé de préparation et diode électroluminescente à points quantiques

Country Status (2)

Country Link
CN (1) CN111384298B (fr)
WO (1) WO2020134252A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347143A (zh) * 2011-07-11 2012-02-08 中国科学院上海硅酸盐研究所 一种石墨烯复合多孔对电极、制备方法及其应用
CN102945757A (zh) * 2012-11-29 2013-02-27 东南大学 染料敏化太阳能电池用ZnO/石墨烯复合纳米结构光阳极及制法
CN107473261A (zh) * 2017-09-01 2017-12-15 北京化工大学 一种氧化锌/还原氧化石墨烯复合材料的制备方法
US20180055976A1 (en) * 2014-12-05 2018-03-01 Korea Research Institute Of Chemical Technology Method of using chemical reaction transparency of graphene
CN108305940A (zh) * 2017-06-10 2018-07-20 虞庆煌 一种基于氧化锌的电子传输材料及在太阳能电池中的应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120067158A (ko) * 2010-12-15 2012-06-25 삼성엘이디 주식회사 양자점 발광 소자
KR101357045B1 (ko) * 2011-11-01 2014-02-05 한국과학기술연구원 그라핀이 결합된 산화물 반도체-그라핀 핵-껍질 양자점과 이를 이용한 튜너블 발광소자 및 그 제조 방법
KR101419809B1 (ko) * 2012-02-22 2014-07-15 서울대학교산학협력단 인버티드 유기 발광 소자 및 이를 포함하는 디스플레이 장치
CN105679958B (zh) * 2016-04-20 2018-03-13 京东方科技集团股份有限公司 电致发光器件及其制作方法、显示装置
TWI715667B (zh) * 2016-06-17 2021-01-11 日商半導體能源研究所股份有限公司 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法
CN106816545B (zh) * 2017-03-23 2021-03-02 京东方科技集团股份有限公司 量子点发光二极管及其制作方法、阵列基板、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347143A (zh) * 2011-07-11 2012-02-08 中国科学院上海硅酸盐研究所 一种石墨烯复合多孔对电极、制备方法及其应用
CN102945757A (zh) * 2012-11-29 2013-02-27 东南大学 染料敏化太阳能电池用ZnO/石墨烯复合纳米结构光阳极及制法
US20180055976A1 (en) * 2014-12-05 2018-03-01 Korea Research Institute Of Chemical Technology Method of using chemical reaction transparency of graphene
CN108305940A (zh) * 2017-06-10 2018-07-20 虞庆煌 一种基于氧化锌的电子传输材料及在太阳能电池中的应用
CN107473261A (zh) * 2017-09-01 2017-12-15 北京化工大学 一种氧化锌/还原氧化石墨烯复合材料的制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIANG, WENLONG: "Improving Stability of Perovskite Solar Cells via Modifying ZnO Electron Transport Layer", MASTER THESIS, 31 May 2017 (2017-05-31), pages 1 - 99, XP009521824 *

Also Published As

Publication number Publication date
CN111384298A (zh) 2020-07-07
CN111384298B (zh) 2021-07-06

Similar Documents

Publication Publication Date Title
KR102120534B1 (ko) 용액-가공성 금속 산화물 완충 층을 포함하는 광전자 장치
WO2019105431A1 (fr) Composant électroluminescent à points quantiques et dispositif d'affichage
JP5682877B2 (ja) 有機電子デバイス及びその製造方法
WO2018192334A1 (fr) Oxyde métallique modifié par copolymère d'acrylate, procédé de préparation et diode électroluminescente à points quantiques
JP2018504787A5 (fr)
US20090071533A1 (en) Transparent electrode comprising graphene sheet, and display and solar cell including the electrode
CN109935714B (zh) 电子传输材料及其制备方法和发光二极管
CN108511633A (zh) 一种无机钙钛矿发光二极管及其制备方法
WO2020134162A1 (fr) Diode électroluminescente à points quantiques et son procédé de préparation
WO2023134434A1 (fr) Méthode de préparation et utilisation de nanoparticules de dioxyde d'étain dispersées dans un solvant alcoolique
CN106784186A (zh) 一种lb量子点薄膜、发光二极管及制备方法
WO2020108071A1 (fr) Diode électroluminescente à points quantiques et son procédé de fabrication
WO2021248877A1 (fr) Matériau composite, procédé de préparation associé et diode électroluminescente
CN110534656B (zh) 一种纳米材料及制备方法与量子点发光二极管
CN104393185B (zh) 一种叠层有机电致发光器件及其制作方法
WO2020134252A1 (fr) Matériau composite, film mince et son procédé de préparation et diode électroluminescente à points quantiques
CN109935662A (zh) 电子传输材料及其制备方法、发光二极管
WO2020134203A1 (fr) Diode électroluminescente à points quantiques et son procédé de préparation
CN108695411B (zh) 量子点发光二极管及其制备方法
JP6156797B2 (ja) 有機電子デバイス
WO2023051054A1 (fr) Liquide d'impression à base de nano-graphite et son procédé de préparation, et diode électroluminescente organique
WO2021253786A1 (fr) Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques
CN112582565B (zh) 发光器件及其制备方法
CN109390481A (zh) 一种纳米电极、其制备方法和应用
CN109285926A (zh) 印刷用薄膜led衬底、印刷型薄膜led器件及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19902177

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19902177

Country of ref document: EP

Kind code of ref document: A1