WO2020119895A1

WO2020119895A1 - Vapor source for depositing an evaporated material, nozzle for a vapor source, vacuum deposition system, and method for depositing an evaporated material

Info

Publication number: WO2020119895A1
Application number: PCT/EP2018/084370
Authority: WO
Inventors: Michael Long; Andreas Lopp
Original assignee: Applied Materials, Inc.
Priority date: 2018-12-11
Filing date: 2018-12-11
Publication date: 2020-06-18
Also published as: JP2022512348A; CN113166925B; KR20210089748A; CN113166925A; TW202037739A

Abstract

Embodiments described herein relate to a vapor source (100) for depositing an evaporated material on a substrate (10) in a vacuum chamber. The vapor source (100) comprises a distribution pipe (110) with a plurality of nozzles, wherein at least one nozzle of the plurality of nozzles comprises a first nozzle section (121) extending along a nozzle axis (A) and having 5 a vapor release opening (123) configured to release a plume (115) of evaporated material, and a second nozzle section (122) downstream of the first nozzle section (121) comprising a shaping passage (125) with a dimension that at least in sections decreases toward a nozzle outlet (126). Embodiments further relate to a nozzle for a vapor source, a vacuum deposition system with a vapor source, and a method for depositing an evaporated material on a substrate 10 in a vacuum chamber.

Description

VAPOR SOURCE FOR DEPOSITING AN EVAPORATED MATERIAL, NOZZLE FOR A VAPOR SOURCE, VACUUM DEPOSITION SYSTEM, AND METHOD FOR

DEPOSITING AN EVAPORATED MATERIAL

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to apparatuses and methods for directing and shaping a vapor stream prior to exiting a nozzle in a vacuum deposition system. Embodiments of the present disclosure particularly relate to a vapor source for depositing an evaporated material, e.g. an organic material, on a substrate. Further embodiments relate to nozzles for a vapor source, to vacuum deposition systems with a vapor source, and to methods of depositing an evaporated material on a substrate in a vacuum chamber, particularly for shaping vapor molecule trajectories in the molecular flow regime. Embodiments particularly relate to the deposition of a pixel pattern on a substrate, particularly through a fine metal mask, and to deposition sources and systems used in the manufacture of organic light-emitting diode (OLED) devices.

BACKGROUND

[0002] Techniques for layer deposition on a substrate include, for example, thermal evaporation, physical vapor deposition (PVD), and chemical vapor deposition (CVD). Coated substrates may be used in several applications and in several technical fields. For instance, coated substrates may be used in the field of organic light emitting diode (OLED) devices. OLEDs can be used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, and the like for displaying information. An OLED device, such as an OLED display, may include one or more layers of an organic material situated between two electrodes that are all deposited on a substrate.

[0003] During processing, the substrate can be supported on a carrier configured to hold the substrate in alignment with a mask. The vapor from a vapor source is directed toward the substrate through the mask to create a patterned film on the substrate. One or more materials may be deposited onto the substrate through one or more masks to create small pixels, that can be addressed individually to create functional devices such as full color displays. It is beneficial to the display quality to create clearly defined pixels having nearly vertical walls and a uniform thickness over the full area of the pixel. To achieve this result, vapor molecules should beneficially not undercut the mask or be partially obstructed by the edges of the mask, causing deposition in the space between pixels or resulting in pixels having rounded edges. In practice this means that a vapor molecule trajectory which is normal to the plane of the substrate or lies within a small angular deviation such as 30° from normal is beneficial.

[0004] Known deposition systems use cooled baffle plates located between the nozzles of the vapor source and the mask to allow only those molecules having trajectories within an allowable cone angle relative to the normal to the plane of the substrate to pass through the baffles and condense on the substrate while collecting molecules having lower angle trajectories as condensate on the baffle plates. One disadvantage of this method is that more than 50% of the vapor generated in the source may be collected as condensate on the baffles instead of depositing on the substrate.

[0005] In view of the above, an increased precision and predictability of evaporation processes for manufacturing high quality devices, as well as a decrease of material loss due to condensation, e.g. on baffle plates, would be beneficial.

SUMMARY

[0006] In light of the above, a vapor source for depositing an evaporated material on a substrate, a nozzle for a vapor source, a vacuum deposition system, as well as a method for depositing an evaporated material on a substrate are provided.

[0007] According to an aspect of the present disclosure, a vapor source for depositing an evaporated material on a substrate is provided. The vapor source includes a distribution pipe with a plurality of nozzles, wherein at least one nozzle of the plurality of nozzles has a first nozzle section extending along a nozzle axis and having a vapor release opening, and a second nozzle section downstream of the first nozzle section. The second nozzle section includes a shaping passage with a dimension that at least in sections decreases toward a nozzle outlet.

[0008] According to an aspect of the present disclosure, a nozzle for a vapor source is provided. The nozzle includes a first nozzle section having a nozzle channel extending along a nozzle axis, and a vapor release opening configured as an orifice for releasing a plume of evaporated material, and a second nozzle section downstream of the first nozzle section and comprising a shaping passage and a nozzle outlet, the shaping passage having a shape adapted to improve a directionality of evaporated material released by the orifice with respect to the nozzle axis.

[0009] According to a further aspect of the present disclosure, a vacuum deposition system is provided. The vacuum deposition system includes a vacuum chamber, a vapor source having a distribution pipe with a plurality of nozzles, and at least one of a first drive for moving the vapor source in the vacuum chamber along a transportation path and a second drive for rotating the distribution pipe of the vapor source. The vapor source and/or the nozzles may be configured in accordance with any of the embodiments described herein. [0010] According to a further aspect of the present disclosure, a method for depositing an evaporated material on a substrate in a vacuum chamber is provided. The method includes directing evaporated material toward the substrate by a plurality of nozzles, at least one nozzle of the plurality of nozzles including a first nozzle section extending along a nozzle axis and a second nozzle section downstream of the first nozzle section. A plume of evaporated material is released by the first nozzle section, and a directionality of the evaporated material of the plume with respect to the nozzle axis is improved by the second nozzle section, the second nozzle section comprising a shaping passage having a dimension that at least partially decreases toward a nozzle outlet.

[0011] Further aspects, advantages and features of the present disclosure are apparent from the description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described in the following:

[0013] FIG. 1 shows a schematic sectional view of a part of a vapor source according to embodiments described herein;

[0014] FIG. 2 is a schematic perspective view of the vapor source of FIG. 1, showing the at least one nozzle of the vapor source in a cut view; [0015] FIG. 3 shows a schematic sectional view of a vapor source according to embodiments described herein;

[0016] FIG. 4 illustrates a molecule trajectory probability model applicable in a molecular flow regime; [0017] FIGS. 5A-C show subsequent stages of a method for depositing an evaporated material on a substrate with a vacuum deposition system according to embodiments described herein;

[0018] FIG. 6 is a flow diagram illustrating a method for depositing an evaporated material on a substrate according to embodiments described herein; and [0019] FIG. 7 is a graph illustrating the shaping effect of various nozzles according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[0020] Reference will now be made in detail to the various embodiments of the present disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to the same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation and is not meant as a limitation of the present disclosure. Features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0021] As used herein, the term“evaporated material” may be understood as a material that is evaporated and deposited on a surface of a substrate. For example, the evaporated material may be an organic material that is deposited on a substrate to form an optically active layer of an OLED device. The material may be deposited in a predetermined pattern, e.g. by using a mask such as a fine metal mask having a plurality of openings. A plurality of pixels may be deposited on the substrate. Other examples of evaporated material include one or more of the following: ITO, NPD, Alq , and metals such as silver or magnesium.

[0022] As used herein, the term“vapor source” or“evaporation source” may be understood as an arrangement providing the evaporated material to be deposited on a substrate. In particular, the vapor source may be configured to direct an evaporated material to be deposited on a substrate into a deposition area in a vacuum chamber. The evaporated material may be directed toward the substrate via a plurality of nozzles of the vapor source. The nozzles may have nozzle outlets, respectively, which may be directed toward the deposition area, particularly toward the substrate to be coated.

[0023] The vapor source may include an evaporator (or“crucible”) which evaporates the material to be deposited on the substrate, and a distribution pipe, which is in fluid connection with the crucible and which is configured to guide the evaporated material to the plurality of nozzles for releasing plumes of evaporated material into the deposition area in a vacuum chamber.

[0024] In some embodiments, the vapor source includes two or more distribution pipes, wherein each distribution pipe includes a plurality of nozzles. For example, each distribution pipe includes two or more nozzles, particularly ten or more nozzles, more particularly 30 or more nozzles. The nozzles of one distribution pipe may be arranged in a linear array or row, such that a line source is provided. In some embodiments, the vapor source includes two or more distribution pipes arranged next to each other, wherein each of the two or more distribution pipes includes ten or more nozzles arranged in a row.

[0025] The term“distribution pipe” may be understood as a tube or pipe for guiding and distributing the evaporated material. In particular, the distribution pipe may guide the evaporated material from a crucible to the plurality of nozzles which may extend through a side wall of the distribution pipe. A plurality of nozzles typically includes at least two or more nozzles, each nozzle including a nozzle outlet for releasing the evaporated material into a vacuum chamber toward the substrate along a main emission direction which may correspond to a nozzle axis which is essentially normal to the surface of the substrate. According to embodiments described herein, the distribution pipe may be a linear distribution pipe extending in a longitudinal direction, particularly in an essentially vertical direction. In some embodiments, the distribution pipe may include a pipe having a sectional shape of a cylinder. The cylinder may have a circular bottom shape or any other suitable bottom shape, e.g. an essentially triangular bottom shape. In particular, the distribution pipe may have an essentially triangular sectional shape. [0026] In some embodiments, the vapor source may include two or three distribution pipes which extend in an essentially vertical direction, respectively. Each distribution pipe may be in fluid connection with a respective crucible such that different materials can be co-deposited on the substrate. Nozzles of a first distribution pipe and nozzles of an adjacent second distribution pipe may be arranged close to each other, e.g. at a distance of 5 cm or less.

[0027] FIG. 1 is a schematic sectional view of a part of a vapor source 100 for depositing an evaporated material on a substrate 10 according to embodiments described herein. The vapor source 100 includes a distribution pipe 110 which may extend in an essentially vertical direction. Alternatively, the distribution pipe may extend in another direction, e.g. an essentially horizontal direction. In the embodiment depicted in FIG. 1, the distribution pipe 110 provides an essentially vertical line source. An essentially vertically extending distribution pipe 110 may be beneficial because the footprint of the system can be reduced, and a compact and space-saving deposition system can be provided. In some embodiments, the vapor source 100 includes two or more distribution pipes which are supported on a source support which may be movable. The two or more distribution pipes may extend in an essentially vertical direction, respectively.

[0028] The distribution pipe 110 includes a plurality of nozzles. The plurality of nozzles allows the evaporated material to be directed from an interior space of the distribution pipe 110 into a deposition area 50 in a vacuum chamber where the substrate 10 is arranged. In some embodiments, ten or more nozzles, particularly thirty or more nozzles may be provided at the distribution pipe 110. The plurality of nozzles may be arranged along the longitudinal direction of the distribution pipe 110 in a line setup.

[0029] According to embodiments described herein, at least one nozzle 120 of the plurality of nozzles includes a first nozzle section 121 extending along a nozzle axis A and having a vapor release opening 123 configured to release a plume 115 of evaporated material toward the substrate 10. The at least one nozzle 120 further includes a second nozzle section 122 downstream of the first nozzle section 121, the second nozzle section 122 including a shaping passage 125 for shaping the plume 115 of evaporated material. The shaping passage 125 has a dimension which, at least in sections, decreases toward a nozzle outlet 126. In particular, a dimension of the shaping passage 125 in an essentially vertical direction V may decrease in a direction from the first nozzle section 121 toward the nozzle outlet 126. [0030] The vapor release opening 123 may be configured to release the plume 115 of evaporated material from the first nozzle section 121 into the second nozzle section 122 and may be configured as an orifice, e.g. a constriction, in a nozzle channel 124. Hence, the first nozzle section 121 may provide a first pressure region configured for maintaining a first vapor pressure therein, and the second nozzle section 122 may provide a second pressure region configured for maintaining a second vapor pressure therein during evaporation, the first nozzle section 121 and the second nozzle section 122 being separated by the orifice provided at a downstream end of the first nozzle section. The second vapor pressure may be lower than the first vapor pressure, e.g. by a factor of two or more, or even by an order of magnitude or more.

[0031] The nozzle outlet 126 may be configured to release the evaporated material into the inner volume of the vacuum chamber, such that the evaporated material can propagate toward the substrate 10. The vacuum chamber may be configured to maintain a third pressure therein, the third pressure being lower than the second vapor pressure in the second nozzle section, typically by a factor of two or more, or even by an order of magnitude or more. The nozzle outlet 126 may be provided at a downstream end of the second nozzle section 122 and may separate the inner volume of the vacuum chamber having the third pressure therein from the second vapor pressure region inside the second nozzle section 122.

[0032] The at least one nozzle 120 is configured to direct and shape the vapor stream prior to exiting the nozzle, such that nearly all vapor molecule trajectories exiting the at least one nozzle 120 through the nozzle outlet 126 are contained within a cone angle a (cone apex angle a) in at least one sectional plane (e.g., in a vertically extending sectional plane, as depicted in FIG. 1), particularly in all sectional planes containing the nozzle axis A. In particular, nearly all vapor molecules (e.g., more than 70%, more than 80% or more than 90% of the vapor molecules) exiting the at least one nozzle may be contained within a cone angle a which may be between 20° and 90° (corresponding to a cone half angle a/2 between 10° and 45°). The cone angle (a) may be selectable, e.g. by adapting the inner shape of the shaping passage 125 of the second nozzle section accordingly.

[0033] The cone angle (a) containing nearly all vapor molecules released by the at least one nozzle 120 may typically range from 20° to 90°, particularly from 30° to 70°, the nozzle axis A defining the center axis of the cone, as is schematically depicted in FIG. 1. [0034] The vapor source 100 according to embodiments described herein is typically operated at a pressure such that the plume 115 of evaporated material released by the vapor release opening 123 entering the second nozzle section 122 forms a free molecular flow (“molecular flow regime”). In other words, the mean free path of the molecules of the plume 115 is large enough such that the individual molecules can be considered to move in straight lines in the second nozzle section 122, and molecule-to-molecule collisions can be essentially neglected. In particular, the vapor source is typically operated at a pressure providing a molecular flow regime in the second nozzle section 122 and in the inner volume of the vacuum chamber. Specifically, the second vapor pressure within the second nozzle section may be below 1 Pa, particularly 0.1 Pa or less, more particularly 0.01 Pa or less. The third pressure in the vacuum chamber may be below the second vapor pressure in the second nozzle section 122, e.g. 0.1 Pa or less, particularly 0.001 Pa or less.

[0035] On the other hand, the first pressure inside the distribution pipe 110 and/or inside the first nozzle section 121 may be 1 Pa or more. At that pressure, there are enough molecule-to- molecule collisions such that a viscous flow model better describes the motion of the vapor molecules than the molecular flow regime. In particular, molecule-to-molecule collisions can typically not be neglected within the first nozzle section.

[0036] In the following, the physics underlying the operation of the at least one nozzle 120 will be briefly explained, briefly referring to FIG. 4.

[0037] Vapor molecules hitting a surface 301 strike and only momentarily remain on the surface 301 when the surface temperature is high enough to prevent condensation. In the molecular flow regime, the molecules leave the surface in a direction having a probability function approaching a (cosine 0)^N shape, where N is typically between 1 and 3, and Q is the angle at which the molecules leave the surface. Accordingly, the leaving direction is completely independent of the incoming direction.

[0038] Hence, in the molecular flow regime, a molecule may leave a heated surface in any direction. The probability of a molecule’s trajectory is proportional to the length of the vectors 302 shown in FIG. 4. The locus of the vector endpoints is described by said (cosine 0)^N function, where N is typically between 1 and 3, and Q is the angle from the surface. However, this probability model does not accurately reflect the molecule behavior as pressures rise into the transition flow or viscous flow regimes. [0039] Applying the trajectory probability model shown in FIG. 4 to the geometry of the at least one nozzle 120 depicted in FIG. 1 illustrates that a second nozzle section 122 providing a shaping passage 125 that shapes the plume 115 released by the vapor release opening 123 allows a substantial improvement in vapor trajectory control. In particular, since the dimension of the shaping passage 125 decreases toward the nozzle outlet 126, a geometry is created where molecules on the walls of a nozzle cavity have a much-reduced probability of escaping the nozzle at angles other than a desired maximum cone angle. In particular, the dimension of the shaping passage 125 may progressively and continuously decrease toward the nozzle outlet. In particular, the inclination of the sidewalls 127 of the shaping passage 125 may become progressively more inclined with respect to the nozzle axis A, e.g. until the sidewalls 127 may finally be essentially perpendicular to the nozzle axis A, as is schematically depicted in FIG. 1. Molecules that do not travel directly from the vapor release opening 123 to the nozzle outlet 126 contact inner side walls of the shaping passage 125 and move within the cavity along trajectories according to the probability model illustrated in FIG. 4. Molecules can escape the nozzle at angles larger than a predefined maximum cone angle, but with substantially reduced probability (see dotted lines in FIG. 1). No molecules remain within the nozzle cavity. Rather, the molecules move from one side surface of the shaping passage 125 to another side surface of the shaping passage 125 until escaping the nozzle predominantly when a high probability trajectory corresponds to the allowable escape cone angle. In FIG. 1, most of the vapor molecules (more than 70%, more than 80%, or more than 90%) will leave the nozzle within the cone angle a, which may correspond to a range from ±10° to ±40° with respect to the nozzle axis A.

[0040] A parabolic shaping contour of the shaping passage 125 can further reduce the probability of low angle molecule trajectories for molecules leaving the surface and especially for molecules leaving the shaping passage 125 directly from a position near the nozzle outlet. For example, in comparison with a straight wall nozzle shape, which may have 50% low angle emission beyond an angle of ±10°, a parabolic nozzle shape may provide 33% low angle emission or less beyond an angle of ±10° with respect to the nozzle axis.

[0041] Returning to FIG. 1, the second nozzle section 122 may have oppositely arranged sidewalls 127 configured to shape the plume 115 of evaporated material released by the vapor release opening 123. A distance between the sidewalls 127 may decrease in a direction away from the first nozzle section 121 toward the nozzle outlet 126 at least in sections, particularly continuously and progressively, in particular up to the nozzle outlet. In particular, the distance between the sidewalls 127 may continuously decrease from the first nozzle section to the nozzle outlet, such that the second nozzle section has the smallest dimension at the position of the nozzle outlet 126. In particular, the inclination of the sidewalls 127 of the shaping passage 125 may become progressively more inclined and finally essentially perpendicular to the nozzle axis A. The probability of molecules leaving the nozzle at a large angle relative to the nozzle axis can be decreased. In particular, the distance between the sidewalls 127 may decrease from a first distance D1 to a second distance D2 which may be less than half the first distance Dl, particularly less than a quarter of the first distance.

[0042] The dimensions D1/D2 of the shaping passage 125 is measured in a sectional place including the nozzle axis A, particularly in a vertical sectional plane containing the nozzle axis A. In some embodiments, the dimension of the shaping passage 125 may decrease toward the nozzle outlet 126 in all sectional planes containing the nozzle axis. For example, the shaping passage 125 may be rotationally symmetric with respect to the nozzle axis A, with a decreasing clear diameter toward the nozzle outlet 126, particularly with a clear diameter that continuously decreases from the entrance of the second nozzle section 122 through to the nozzle outlet 126, as is schematically depicted in FIG. 1.

[0043] In some embodiments, which may be combined with other embodiments described herein, the dimension of the shaping passage 125 continuously decreases from a first dimension Dl, particularly 15 mm or more, to a second dimension D2, particularly 6 mm or less. As mentioned above, the dimension of the shaping passage 125 is measured in at least one sectional plane containing the nozzle axis (e.g. a vertical sectional plane). In some embodiments, the dimension of the shaping passage decreases in all sectional planes containing the nozzle axis A toward the nozzle outlet 126. The smallest dimension of the shaping passage may be provided at the position of the nozzle outlet 126, e.g. 6 mm or less, particularly 2 mm or less in some embodiments.

[0044] In some embodiments, an inclination of the sidewalls 127 of the shaping passage with respect to the nozzle axis A increases toward the nozzle outlet 126, e.g. from a first angle between 10° and 40° to a second angle between 60° and 90° at a position near the nozzle outlet, as is depicted in the sectional view of FIG. 1. For example, the sidewalls 127 may extend essentially perpendicular to the nozzle axis at a position adjacent to the nozzle outlet [0045] In some embodiments, the shaping passage 125 provides a nozzle cavity having a shape configured to improve a directionality of evaporated material released by the vapor release opening 123 with respect to the nozzle axis A. The term“nozzle cavity” as used herein may be understood as an inner nozzle space having a vapor entrance (provided by the vapor release opening 123) and a vapor exit (provided by the nozzle outlet 126), the vapor entrance and the vapor exit having an area perpendicular to the nozzle axis A which is smaller than an area in a center region of the nozzle cavity. Molecules having entered the nozzle cavity at an angle larger than a predefined maximum angle (a/2) with respect to the nozzle axis A may propagate inside the nozzle cavity between the sidewalls 127 several times until the molecules may leave the nozzle cavity at a different angle which is typically smaller than the predefined maximum angle (a/2), i.e. within the cone angle a.

[0046] The term“improving the directionality of evaporated material with respect to the nozzle axis A” as used herein may be understood to mean that more vapor molecules exit the second nozzle section 122 at an angle smaller than a predefined maximum cone angle (a/2) with respect to the nozzle axis A (i.e., within cone angle a) as compared to the molecules which enter the second nozzle section 122 through the vapor release opening 123. In other words, the directionality of the plume 115 exiting the second nozzle section is better as compared to the directionality of the plume 115 having entered the second nozzle section 122 through the vapor release opening 123.

[0047] In particular, the geometry of the nozzle cavity is adapted such that the vapor molecule trajectories are shaped and aligned, the nozzle acting to concentrate a high percentage of the vapor flux exiting the nozzle into a well-defined, controllable and/or typically narrow cone angle with respect to the nozzle axis A. For example, the nozzle cavity may have an inner shape such that one or more of the following applies: (1) More than 70% of a plume flux (i.e., of the vapor molecules) exits the nozzle at an angle of ±12.5° or less with respect to the nozzle axis A in at least one sectional plane containing the nozzle axis (e.g. in a vertical plane), particularly in all sectional planes containing the nozzle axis. In this case, the predefined cone angle a of the vapor cone exiting the nozzle is 25°; (2) More than 90% of a plume flux (i.e., of the vapor molecules) exits the nozzle at an angle of ±25° or less with respect to the nozzle axis A in at least one sectional plane containing the nozzle axis (e.g. in a vertical plane), particularly in all sectional planes containing the nozzle axis. In this case, the cone angle a of the vapor cone exiting the nozzle is 50°. (3) More than 95% of a plume flux exits the nozzle at an angle of ±30° or less with respect to the nozzle axis A in at least one sectional plane containing the nozzle axis (e.g. in a vertical plane), particularly in all sectional planes containing the nozzle axis. In this case, the cone angle a of the vapor cone exiting the nozzle is 60°.

[0048] In some embodiments, which may be combined with other embodiments described herein, sidewalls 127 of the shaping passage 125 may have at least partially an essentially parabolic shape, particularly a vertex of said parabola being essentially located at the position of the nozzle outlet 126. A parabolic shape of the sidewalls 127 of the shaping passage 125 helps to improve the directionality of the molecules exiting the nozzle and to better confine a high percentage of the plume flux within a predefined cone angle. In particular, the probability of molecules exiting the second nozzle section at a high angle with respect to the nozzle axis can be decreased.

[0049] In some embodiments, which may be combined with other embodiments described herein, the nozzle may comprise more than one shaping passage in series. For example, the second nozzle section may include a first shaping passage and a second shaping passage downstream of the first shaping passage. In particular, a cascade of shaping passages may be provided. Each shaping passage may further improve the directionality of evaporated material with respect to the nozzle axis.

[0050] For example, in some embodiments, a first shaping passage may have a dimension that at least in sections decreases toward a second shaping passage, and the second shaping passage may have a dimension that at least in sections decreases toward the nozzle outlet. A constriction in the vapor path may be provided at the transition from the first shaping passage to the second shaping passage, such that the first shaping passage may release the plume of evaporation material into the second shaping passage where the plume may be shaped further.

[0051] In implementations, the nozzle may include a cascade of (at least two) parabolically shaped shaping passages in series, the dimension of each shaping passage decreasing in a direction away from the first nozzle section. The successive shaping passages, each being configured to operate in the molecular flow regime, may refine the shaping of the respective preceding shaping passage, in order to further confine most of the vapor molecules exiting the nozzle within a defined cone angle. [0052] In some implementations, which may be combined with other implementations described herein, the first nozzle section 121 includes a nozzle channel 124 extending along the nozzle axis A, and the vapor release opening 123 is configured as an orifice for releasing the plume 115 of evaporated material into the second nozzle section 122. The orifice may be provided at a downstream end of the nozzle channel 124 and be configured as a constriction in the nozzle channel 124. The size of the orifice in a sectional plane perpendicular to the nozzle axis A may be smaller than the size of the nozzle channel, e.g. by a factor of 2 or more, particularly by a factor of 10 or more. Alternatively or additionally, the size of the orifice in a sectional plane perpendicular to the nozzle axis A may be smaller than the size of the nozzle outlet 126 in a sectional plane perpendicular to the nozzle axis A, e.g. by a factor of 2 or more, particularly by a factor of 10 or more.

[0053] In some embodiments, the nozzle outlet 126 may provide a cone angle a with respect to a center of the vapor release opening 123 of 20° or more and 90° or less, particularly a cone angle a of 30° or more and 70° or less. In other words, the cone half angle a/2 provided by the nozzle outlet with respect to the nozzle axis may be ±10° or more and ±45° or less, particularly ±15° or more and ±35° or less. Accordingly, when operated in the molecular flow regime, a vapor molecule entering the second nozzle section 122 at an angle smaller than a/2 with respect to the nozzle axis A will typically exit the nozzle in an unhindered way, without impinging on a sidewall of the shaping passage. A molecule entering the second nozzle section 122 at an angle larger than a/2 with respect to the nozzle axis A will impinge on at least one sidewall of the shaping passage and has a high probability of leaving the second nozzle section at an angle smaller than a/2 with respect to the nozzle axis A, i.e. within the cone angle a. The directionality of the plume 115 exiting the nozzle can be improved.

[0054] In some embodiments, which may be combined with other embodiments described herein, the first nozzle section 121 and the second nozzle section 122 are in thermal contact or are integrally provided as a one-piece component. In particular, the first nozzle section 121 and the second nozzle section 122 may be a one-piece or an integral metal component. Accordingly, the first nozzle section and the second nozzle section can be held at essentially the same temperature above the evaporation temperature of the evaporated material such that a condensation of vapor on an inner wall of the first nozzle section 121 and of the second nozzle section 122 can be avoided. Thus, a molecule hitting the sidewall 127 of the shaping passage 125 in the molecular flow region will straightaway leave the hot sidewall at an angle according to the probability function illustrated in FIG. 4.

[0055] As is schematically depicted in FIG. 1, the nozzle cavity which is formed by the shaping passage 125 may have at least a shaping area 128 which is arranged in the same sectional plane perpendicular to the nozzle axis A as a downstream portion of the first nozzle section 121, i.e., which overlaps with the first nozzle section 121. For example, the sidewalls 127 of the shaping passage 125 may form a first parabolic section, with a vertex of the first parabolic section being essentially arranged at the nozzle outlet 126, and the sidewalls 127 of the shaping passage 125 may form a second parabolic section with a vertex of the second parabolic section being essentially arranged at the vapor release opening 123, the slope of the second parabolic section being smaller than the slope of the first parabolic section. A different shape of the sidewalls 127 of the shaping passage 125, including a shaping area 128 which extends from the vapor release opening 123 at least partially in the direction toward the distribution pipe 110, is similarly possible. The probability of vapor molecules leaving the second nozzle section 122 at large angles can be further decreased.

[0056] FIG. 2 is a schematic perspective view of the vapor source of FIG. 1, partially showing the vapor source 100 in a sectional view. In particular, a part of the at least one nozzle 120 is cut away, in order to illustrate the shape of the inner nozzle walls.

[0057] As is schematically depicted in FIG. 2, the vapor source 100 according to embodiments described herein has at least one nozzle 120 for directing evaporated material from the distribution pipe 110 toward the substrate 10. The at least one nozzle 120 has a first nozzle section 121 having a nozzle channel 124 extending along a nozzle axis A and a vapor release opening 123 configured as an orifice for releasing a plume 115 of evaporated material. The at least one nozzle further has a second nozzle section 122 downstream of the first nozzle section. The second nozzle section 122 includes a shaping passage 125 and a nozzle outlet 126, the shaping passage 125 having a shape adapted to improve the directionality of the evaporated material released by the orifice with respect to the nozzle axis A.

[0058] In some embodiments, a dimension of the shaping passage 125 (i.e. a dimension in a vertical direction V) may decrease toward the nozzle outlet 126. Accordingly, the probability of vapor molecules exiting the second nozzle section at a large angle with respect to the nozzle axis A can be reduced, and pixels with an improved shape and steeper pixel walls can be deposited. The display quality can be improved.

[0059] In the embodiment depicted in FIG. 2, the vapor release opening 123 and/or the nozzle outlet 126 have a non-circular shape. In particular, both the vapor release opening 123 and the nozzle outlet 126 may be slit openings. In the embodiment depicted in FIG. 2, an opening length of the slit openings extends in an essentially horizontal direction H, and an opening width of the slit openings extends in an essentially vertical direction. In embodiments, a ratio between an opening length and an opening width of the vapor release opening and/or of the nozzle outlet is 5 or more.

[0060] In another embodiment, the vapor release opening 123 and/or the nozzle outlet 126 may be rotationally symmetric with respect to the nozzle axis A. For example, the vapor release opening (123) and the nozzle outlet 126 may have the shape of a cylinder or a ring around the nozzle axis A. In particular, the vapor release opening 123 and/or the nozzle outlet 126 may be round or circular.

[0061] In some embodiments, the nozzle channel 124 and/or the shaping passage 125 are rotationally symmetric with respect to the nozzle axis A. For example, the sidewalls 127 of the shaping passage 125 may have a parabolic shape in each sectional plane containing the nozzle axis. In particular, the shaping passage 125 may have (at least partially) the shape of a parabola rotated around the nozzle axis A and having the vertex positioned at the nozzle outlet. Accordingly, the plume 115 of evaporated material can be shaped both in a vertical direction and in a horizontal direction perpendicular to the nozzle axis A. In particular, the plume can be shaped to exit the nozzle as a cone with a well-defined, small cone angle with respect to the nozzle axis A.

[0062] In some embodiments, which may be combined with other embodiments described herein, the vapor release opening 123 has a first dimension along the nozzle axis A and a second dimension perpendicular to the nozzle axis (e.g. in the vertical direction V), a ratio between the first dimension and the second dimension being 1 or more, particularly 5 or more. For example, the vapor release opening 123 may be configured as an orifice which extends along the nozzle axis A over 1 mm or more, particularly 5 mm or more and having an opening width of 1 mm or less. The directionality of the plume 115 entering the second nozzle section 122 with respect to the nozzle axis can be improved when a large ratio between the first dimension and the second dimension is provided, as less shaping needs to be done by the shaping passage.

[0063] In some embodiments, the vapor release opening 123 is a circular orifice having a diameter which is smaller than the extension of the circular orifice along the nozzle axis A. Accordingly, the portion of molecules entering the second nozzle section 122 at a large angle with respect to the nozzle axis can be decreased, and less shaping needs to be done by the shaping passage 122 of the second nozzle section 122.

[0064] The at least one nozzle 120 described herein provides the following advantages. A smaller portion of the typically expensive evaporated material (e.g., organic material) is wasted, e.g. due to the condensation on cooled shielding plates. The effective deposition rate at a given source temperature can be increased. The operational time of the vapor source can be increased, e.g. because cleaning of the nozzles at regular intervals may not be necessary. No increase in evaporation temperature to compensate for a lower effective deposition rate may be needed. There are no cooled baffles on which condensation occurs which may change the process results over time. Less process time is needed for cleaning, such that the throughput can be increased. The risk of particle contamination can be reduced. The machine costs can be decreased, e.g. because less or no shielding or baffle plates may be needed. The system reliability can be increased.

[0065] In embodiments described herein, the sidewalls 127 of the shaping passage 125 may be smooth to reduce or prevent unwanted scattering from surface asperities. For example, an average roughness of the surface of the shaping passage may be 1.5 pm or less.

[0066] FIG. 3 is a schematic sectional view of a vapor source 100 according to embodiments described herein having a plurality of nozzles 116. At least one nozzle 120 of the plurality of nozzles may be configured in accordance with any of the embodiments described herein. In particular, two, five or more nozzles provided in a distribution pipe 110 of the vapor source 100 may be configured in accordance with embodiments described herein.

[0067] The plurality of nozzles 116 may have a nozzle channel, respectively, which extends along a nozzle axis A of the respective nozzle toward a deposition area 50 and defines the main evaporation direction of the respective nozzle. In some embodiments, the nozzle axis may extend in an essentially horizontal direction toward the substrate 10. A plurality of plumes of evaporated material can be directed from the interior space of the distribution pipe 110 through the plurality of nozzles 116 toward the substrate 10.

[0068] In implementations, a mask may be arranged between the vapor source 100 and the substrate 10, wherein the mask may be a FMM with an opening pattern which defines a pixel pattern to be deposited on the substrate. For example, the mask may have 100,000 openings or more, particularly 1,000,000 openings or more.

[0069] According to embodiments described herein, the at least one nozzle 120 of the plurality of nozzles 116 has a first nozzle section 121 configured to release a plume 115 of evaporated material and a second nozzle section 122 configured to shape the plume 115 of evaporated material with a shaping passage 125 of the second nozzle section 122 having a sidewall 127 being shaped to improve a directionality of the plume 115 with respect to the nozzle axis A. In other words, the probability of the plume exiting the nozzle having vapor molecules propagating at an angle larger than a predefined angle with respect to the nozzle axis can be decreased by the shaping passage. [0070] In particular, a dimension of the shaping passage 125 may decrease toward the nozzle outlet, in particular in all sectional planes containing the nozzle axis.

[0071] Each nozzle of the plurality of nozzles 116 may have a corresponding setup, i.e. includes a respective first nozzle section configured to release a plume of evaporated material, and a respective second nozzle section downstream of the first nozzle section with a shaping passage for individually shaping the plume of evaporated material of one associated nozzle, respectively. In particular, the plurality of nozzles 116 may have the same configuration as the at least one nozzle 120. In some embodiments, the vapor source may include two, three or more distribution pipes arranged next to each other on a common source support.

[0072] This allows a limitation of the spread of the plumes in at least one direction which reduces the shadowing effect of the mask and increases the pixel quality. For example, the shadow of a pixel edge of a deposited pixel may have a dimension of 3 pm, particularly 2.5 pm or less in a direction in which the plume is shaped by the second nozzle section, e.g. a vertical direction. Yet, a comparatively high utilization of material can be achieved, since the material does not condense on the at least one nozzle due to the high nozzle temperature. [0073] As is shown in FIG. 3, the first nozzle section 121 and the second nozzle section 122 may be in thermal contact and/or may be integrally formed, e.g. integrally provided as a one- piece component. The plurality of nozzles of the vapor source is typically directly or indirectly heatable by a heating device and/or is in thermal contact with the distribution pipe 110. During deposition, the temperature of the nozzles is typically hot, i.e. equal to or higher than the evaporation temperature of the evaporated material, in order to prevent a condensation of the evaporated material on a nozzle surface. A condensation of evaporated material on a nozzle surface may lead to a decrease in the width of the nozzle diameter due to material accumulation and finally to a clogging of the nozzle.

[0074] By arranging the second nozzle section 122 in thermal contact with the first nozzle section 121, both nozzle sections can be maintained at a similar (hot) temperature suitable for avoiding a condensation of the evaporated material on a nozzle surface. For example, the first nozzle section and the second nozzle section may be made of a thermally conductive material, such as metal, and be in direct contact with each other. In the embodiment depicted in FIG. 3, the first nozzle section and the second nozzle section are integrally formed. For example, the nozzle including the first nozzle section 121 and the second nozzle section 122 may be provided as a one-piece component, e.g. made of metal. Similar temperatures of the first nozzle section and of the second nozzle section during deposition can be guaranteed.

[0075] In some implementations, the first nozzle section 121 is in thermal contact with a heated portion of the distribution pipe 110, e.g. with a wall of the distribution pipe. The heated portion of the distribution pipe is heatable by a heating device, e.g. to a temperature of 100°C or more, particularly 300°C or more, more particularly 500°C or more. The second nozzle section 122 may be in thermal contact with the first nozzle section 121. Accordingly, the second nozzle section 122 may be indirectly heated via the distribution pipe 110 and the first nozzle section 121. A condensation of evaporated material on the first nozzle section 121 and on the second nozzle section 122 can be reduced or avoided.

[0076] As is depicted in FIG. 3, the vapor source 100 includes a source support 105, a crucible 102 and the distribution pipe 110 being supported on the source support 105. The source support 105 may be movable along a source transportation path during evaporation. Alternatively, the vapor source may be a stationary source configured for coating a moving substrate. [0077] FIG. 5A shows a schematic top view of a vacuum deposition system 400 including a vapor source 100 according to embodiments described herein. The vacuum deposition system 400 includes a vacuum chamber 101 in which the vapor source 100 is provided. According to some embodiments, which can be combined with other embodiments described herein, the vapor source 100 is configured for a translational movement past the deposition area 50 where the substrate 10 to be coated is arranged. Alternatively or additionally, the vapor source 100 may be configured for a rotation around a rotation axis. In particular, the vapor source 100 may be configured for a translational movement in a horizontal direction H along a source transportation path.

[0078] In some embodiments, the vacuum deposition system 400 may include at least one of a first drive 401 for moving the vapor source 100 in the vacuum chamber 101 along a source transportation path and a second drive 403 for rotating the distribution pipe 110 of the vapor source 100. The distribution pipe 110 may be rotated from the first deposition area 50 where a substrate 10 and a mask 11 are arranged to a second deposition area 51 on an opposite side of the vapor source 100 where a second substrate 20 and a second mask 21 can be arranged.

[0079] The vapor source 100 may be configured in accordance with any of the embodiments described herein, such that reference can be made to the above explanations, which are not repeated here. Further, the vapor source 100 may include a distribution pipe with nozzles in accordance with any of the embodiments described herein, such that reference can be made to the above explanations, which are not repeated here.

[0080] According to embodiments, the vapor source 100 may have a crucible 102 or two or more crucibles, and a distribution pipe 110 or two or more distribution pipes. For instance, the vapor source 100 shown in FIG. 5 A includes two crucibles and two distribution pipes arranged next to each other. As is shown in FIG. 5 A, a substrate 10 and a second substrate 20 may be provided in the vacuum chamber 101 for receiving the evaporated material.

[0081] According to embodiments, a mask 11 for masking the substrate 10 can be provided between the substrate 10 and the vapor source 100. The mask 11 may be held by a mask frame in a predetermined orientation, particularly in an essentially vertical orientation. In embodiments, one or more tracks may be provided for supporting and displacing the mask 11. For instance, the embodiment shown in FIG. 5 A has a mask 11 supported by a mask frame arranged between the vapor source 100 and the substrate 10 and a second mask 21 supported by a second mask frame arranged between the vapor source 100 and the second substrate 20. The substrate 10 and the second substrate 20 may be supported on respective transportation tracks in the vacuum chamber 101.

[0082] In embodiments, if masks are used for depositing material on a substrate, such as in an OLED production system, the mask may be a pixel mask with pixel openings having the size of about 50 pm x 50 pm, or less. In one example, the pixel mask may have a thickness of about 40 pm. During the evaporation, the mask 11 and the substrate 10 are typically in contact. Yet, considering the thickness of the mask and the size of the pixel openings, a shadowing effect may appear where the walls surrounding the pixel openings shadow an outer part of the pixel openings. The nozzles as described herein may limit the maximum angle of impact of the evaporated material on the masks and on the substrates and reduce the shadowing effect. For example, a dimension of the shadow may become 3 pm or less according to deposition methods described herein.

[0083] According to embodiments described herein, the substrate may be coated with a material in an essentially vertical orientation. Typically, the distribution pipes are configured as line sources extending essentially vertically. In embodiments described herein, which can be combined with other embodiments described herein, the term“vertically” is understood, particularly when referring to the substrate orientation or the extension direction of the distribution pipe, to allow for a deviation from the vertical direction of 20° or less, e.g. of 10° or less. For example, this deviation can be provided because a substrate arranged with some deviation from a vertical orientation might result in a more stable deposition process. An essentially vertical substrate orientation during deposition of the material is substantially different from a horizontal substrate orientation. The surface of the substrate is coated by a line source extending in one direction corresponding to one substrate dimension and by providing a translational movement of the evaporation source along another direction corresponding to the other substrate dimension.

[0084] In some embodiments, the vapor source 100 may be provided in the vacuum chamber 101 of the vacuum deposition system 400 on a track. The track is configured for the translational movement of the vapor source 100. According to embodiments, which can be combined with other embodiments described herein, a first drive 401 for the translational movement of the vapor source 100 may be provided at the track or at the source support 105. Accordingly, the vapor source can be moved past the surface of the substrate to be coated during deposition, particularly along a linear path. Uniformity of the deposited material on the substrate can be improved.

[0085] As is schematically depicted in FIG. 5B, the evaporation source may move along the source transportation path past the substrate to be coated, particularly in the horizontal direction H. A thin pattern of material can be evaporated on the substrate during the movement of the source from the source position depicted in FIG. 5A to the source position depicted in FIG. 5B. The expansions of the plumes of evaporated material may be limited in the vertical direction and/or in the horizontal direction by the geometry of the nozzles that are provided in the distribution pipes. In particular, plumes of evaporated material may be released by first nozzle sections, and the plumes may be shaped for improving the directionality and for reducing the portion of molecules propagating at large-angle trajectories by second nozzle sections having respective shaping passages.

[0086] As is schematically depicted in FIG. 5C, the distribution pipes of the vapor source 100 may rotate, e.g. by an rotation angle of about 180°, around a vertical rotation axis, to be directed toward the second deposition area 51 where the second substrate 20 is arranged. Coating may continue on the second substrate 20 in the second deposition area 51 of the vacuum chamber 101 by moving the vapor source along the source transportation path back to the source position depicted in FIG. 5A.

[0087] The vacuum deposition system 400 may be used for various applications, including applications for OLED device manufacturing including processing methods, wherein two or more source materials such as, for instance, two or more organic materials are evaporated simultaneously. In the example shown in FIG. 5A to FIG. 5C, two or more distribution pipes and corresponding crucibles are provided next to each other on the source support 105 which is movable. For example, in some embodiments, three distribution pipes may be provided next to each other, each distribution pipe including a plurality of nozzles with respective nozzle outlets for releasing the evaporated material from the interior of the respective distribution pipe into the deposition area of the vacuum chamber. The nozzles may be provided along the longitudinal direction of the respective distribution pipe, e.g. at an equal spacing. At least some distribution pipes may be configured for introducing a different evaporated material into the deposition area of the vacuum chamber. [0088] Embodiments described herein particularly relate to deposition of organic materials, e.g. for OLED display manufacturing on large area substrates. According to some embodiments, large area substrates or carriers supporting one or more substrates may have a size of 0.5 m² or more, particularly 1 m² or more. For instance, the deposition system may be adapted for processing large area substrates, such as substrates of GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0089] FIG. 6 is a flow diagram illustrating a method of operating a vapor source for depositing an evaporated material on a substrate in a vacuum chamber. The vapor source may be a vapor source according to any of the embodiments described herein.

[0090] The material may be heated and evaporated in a crucible, and the evaporated material may propagate via a distribution pipe 110 into a deposition area through a plurality of nozzles provided in the distribution pipe 110.

[0091] In box 610, evaporated material is directed toward the substrate by the plurality of nozzles. A plume of evaporated material is released by a first nozzle section 121 of at least one nozzle 120 of the plurality of nozzles. The at least one nozzle 120 has a first nozzle section 121 extending along a nozzle axis A and a second nozzle section 122 downstream of the first nozzle section 121.

[0092] In box 620, a directionality of the evaporated material of the plume with respect to the nozzle axis A is improved by the second nozzle section 122, the second nozzle section including a shaping passage having a dimension that at least in sections decreases toward a nozzle outlet 126. In particular, sidewalls 127 of the shaping passage, which may approach each other in a direction toward the nozzle outlet 126, may reduce the probability of molecules impinging on the sidewalls to exit the nozzle at a large angle with respect to the nozzle axis.

[0093] In some embodiments, which may be combined with other embodiments described herein, the shaping passage 125 forms a nozzle cavity, a first pressure in the first nozzle section 121 being larger than a second pressure in the nozzle cavity, and/or the second pressure in the nozzle cavity being larger than a third pressure in the vacuum chamber. The first pressure may be more than ten times the second pressure, and/or the second pressure may be more than ten times the third pressure.

[0094] For example, the first pressure in the first nozzle section may be such as to provide a viscous or transition flow regime for vapor molecules propagating therethrough, and the second pressure in the second nozzle section may be such as to provide a molecular flow regime for vapor molecules propagating therethrough. A third pressure in the vacuum chamber may be such as to provide a molecular flow regime for vapor molecules propagating therethrough.

[0095] For example, the first pressure in the distribution pipe and/or in the first nozzle section may be 1 Pa or more. The second pressure in the second nozzle section and/or the third pressure in the vacuum chamber may be less than 1 Pa, particularly 0.1 Pa or less, more particularly 0.01 Pa or less. The third pressure in the vacuum chamber may be less than the second pressure in the second nozzle section, e.g. by an order of magnitude or more.

[0096] In some embodiments, which may be combined with other embodiments described herein, the at least one nozzle is heated such that an inner wall of the first nozzle section 121 and an inner wall of the second nozzle section 122 have a temperature above the evaporation temperature of the evaporated material. A condensation of evaporated material inside the nozzle can be reduced or avoided.

[0097] In embodiments, which may be combined with other embodiments described herein, the shaping passage 125 shapes the plume released by an orifice of the first nozzle section 121 such that more than 70% of a plume flux exits the nozzle at an angle of ±12.5° or less with respect to the nozzle axis A, and/or such that more than 90% of the plume flux exits the nozzle at an angle of ±25° or less with respect to the nozzle axis A.

[0098] FIG. 7 is a graph illustrating the shaping effect of different nozzles according to embodiments described herein in at least one sectional plane containing the nozzle axis, particularly in a vertical sectional plane. The depicted graph assumes a pressure regime in the second nozzle section ensuring a molecular flow of vapor molecules therein. [0099] The graph of FIG. 7 shows the ratio between the flux of vapor molecules within a cone angle centered around the nozzle axis A and the total flux of vapor molecules exiting the nozzle (702: integrated flux in % from total flux along the vertical) as a function of said cone angle (701 : angle opening in a vertical sectional plane) for three different nozzle geometries 710, 720, 730.

[00100] The dashed line 710 illustrates a conventional nozzle having a nozzle diameter which continuously increases toward the nozzle outlet. It can be seen that only about 60% of the total flux of vapor molecules exiting the nozzle is contained within an angle of 20°, and only about 80% of the total flux of vapor molecules exiting the nozzle is contained within an angle of 30° with respect to the nozzle axis A.

[00101] The continuous line 720 illustrates a nozzle according to embodiments described herein, namely the nozzle depicted in FIG. 1. It can be seen that more than 85% of the total flux of vapor molecules exiting the nozzle is contained within an angle of 20%, and that more than 90% of the total flux of vapor molecules exiting the nozzle is containing within an angle of 30° with respect to the nozzle axis A.

[00102] The dashed-dotted line 730 illustrates another nozzle according to some embodiments described herein. The inner geometry of this nozzle is slightly modified as compared to the inner geometry of the nozzle depicted in FIG. 1 and illustrated by 720. In particular, the shaping passage is adapted such that a higher portion of the total molecule flux exiting the nozzle is contained within an angle of 30° relative to the nozzle axis. On the other hand, the portion of the total molecule flux exiting the nozzle contained within an angle of 20° is slightly reduced as compared to the nozzle of FIG. 1. In the nozzle illustrated by dashed-dotted line 730, the nozzle outlet 126 provides a larger cone angle with respect to the center of the vapor release opening 126 (i.e. the cone angle provided by the nozzle outlet is about a= 60°, i.e. a/2=±30°), and the ratio between the length of the vapor release opening 126 along the nozzle axis and the width of the vapor release opening 126 is slightly increased. This allows a yet higher percentage of the molecule flux exiting the nozzle to be contained within an angle of 30° with respect to the nozzle axis.

[00103] Embodiments described herein particularly relate to the evaporation of materials on large-area substrates, e.g. for display manufacturing. For example, the substrates may be glass substrates. Embodiments described herein may also relate to semiconductor processing, e.g. for the deposition of materials, such as metals or OLED materials, on semiconductor wafers. The semiconductor wafers may be horizontally or vertically arranged during evaporation.

[00104] This written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

1. A vapor source (100) for depositing an evaporated material on a substrate (10) in a vacuum chamber, comprising a distribution pipe (110) with a plurality of nozzles, at least one nozzle (120) of the plurality of nozzles comprising: a first nozzle section (121) extending along a nozzle axis (A) and having a vapor release opening (123); and a second nozzle section (122) downstream of the first nozzle section (121) comprising a shaping passage (125) with a dimension that at least in sections decreases toward a nozzle outlet (126).

2. The vapor source of claim 1, wherein the second nozzle section (122) has oppositely arranged sidewalls (127) for shaping a plume of evaporated material released by the vapor release opening (123), a distance between the sidewalls (127) decreasing in a direction away from the first nozzle section (121) toward the nozzle outlet (126), particularly from a first distance (Dl) to a second distance (D2) which is less than a quarter of the first distance.

3. The vapor source of claim 1 or 2, wherein the dimension of the shaping passage continuously decreases from a first dimension (Dl), particularly about 15 mm or more, to a second dimension (D2), particularly about 6 mm or less.

4. The vapor source of any of claims 1 to 3, wherein the shaping passage (125) provides a nozzle cavity (125) having a shape configured to improve a directionality of evaporated material released by the vapor release opening (123) with respect to the nozzle axis (A), particularly such that, in at least one sectional plane containing the nozzle axis, more than 70% of a plume flux exits the nozzle at an angle of ±12.5° or less with respect to the nozzle axis (A) and/or such that more than 90% of a plume flux exits the nozzle at an angle of ±25° or less with respect to the nozzle axis.

5. The vapor source of any of claims 1 to 4, wherein sidewalls (127) of the shaping passage have an essentially parabolic shape in at least one sectional plane, particularly wherein a vertex of the parabola is located at the nozzle outlet (126).

6. The vapor source of any of claims 1 to 5, wherein the first nozzle section (121) comprises a nozzle channel (124) extending along the nozzle axis (A), the vapor release opening (123) being configured as an orifice for releasing a plume of evaporated material into the second nozzle section (122), the size of the orifice being smaller than the size of the nozzle outlet (126).

7. The vapor source of any of claims 1 to 6, wherein

• the vapor release opening (123) and/or the nozzle outlet (126) have a non-circular shape, particularly wherein the vapor release opening and/or the nozzle outlet are slit openings, or

• the vapor release opening and/or the nozzle outlet are rotationally symmetric with respect to the nozzle axis (A).

8. The vapor source of any of claims 1 to 7, wherein the vapor release opening (123) has a first dimension along the nozzle axis (A) and a second dimension perpendicular to the nozzle axis (A), a ratio between the first dimension and the second dimension being 1 or more, particularly 5 or more.

9. The vapor source of any of claims 1 to 8, wherein the nozzle outlet (126) provides a cone angle (a) with respect to a center of the vapor release opening of 20° or more and 90° or less, particularly 30° or more and 70° or less.

10. The vapor source of any of claims 1 to 9, wherein the first nozzle section (121) and the second nozzle section (122) are in thermal contact or integrally provided as a one-piece component.

11. A nozzle (120) for a vapor source, comprising a first nozzle section (121) having a nozzle channel (124) extending along a nozzle axis (A), and a vapor release opening (123) configured as an orifice for releasing a plume (115) of evaporated material, and a second nozzle section (122) downstream of the first nozzle section (121) and comprising a shaping passage and a nozzle outlet (126), the shaping passage being shaped to improve a directionality of evaporated material released by the orifice with respect to the nozzle axis (A).

12. The nozzle of claim 11, wherein the vapor release opening (123) is a first slit opening and the nozzle outlet (126) is a second slit opening, particularly wherein a ratio between an opening length and an opening width of the vapor release opening and/or of the nozzle outlet is 5 or more.

13. A vacuum deposition system, comprising: a vacuum chamber; a vapor source according to any of claims 1 to 10 provided in the vacuum chamber; and at least one of a first drive for moving the vapor source in the vacuum chamber along a transportation path and a second drive for rotating the distribution pipe of the vapor source.

14. A method for depositing an evaporated material on a substrate in a vacuum chamber, the method comprising: directing evaporated material toward the substrate by a plurality of nozzles, at least one nozzle of the plurality of nozzles including a first nozzle section (121) extending along a nozzle axis (A) and a second nozzle section (122) downstream of the first nozzle section (121), wherein a plume of evaporated material is released by the first nozzle section, and a directionality of the evaporated material of the plume with respect to the nozzle axis (A) is improved by the second nozzle section (122), the second nozzle section comprising a shaping passage having a dimension that at least partially decreases toward a nozzle outlet (126).

15. The method of claim 14, wherein the shaping passage forms a nozzle cavity (125), a first vapor pressure in the first nozzle section (121) being more than ten times a second pressure in the nozzle cavity (125), and/or the second pressure in the nozzle cavity (125) being more than ten times a third pressure in the vacuum chamber.

16. The method of claim 14 or 15, further comprising: heating the nozzle such that an inner wall of the first nozzle section (121) and of the second nozzle section (122) has a temperature above the evaporation temperature of the evaporated material.

17. The method of any of claims 14 to 16, wherein the shaping passage shapes the plume such that more than 70% of a plume flux exits the nozzle at an angle of ±12.5° or less with respect to the nozzle axis (A) and/or such that more than 90% of the plume flux exits the nozzle at an angle of ±25° or less with respect to the nozzle axis (A).