WO2020093189A1 - 一种抗反射激光器 - Google Patents

一种抗反射激光器 Download PDF

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Publication number
WO2020093189A1
WO2020093189A1 PCT/CN2018/113927 CN2018113927W WO2020093189A1 WO 2020093189 A1 WO2020093189 A1 WO 2020093189A1 CN 2018113927 W CN2018113927 W CN 2018113927W WO 2020093189 A1 WO2020093189 A1 WO 2020093189A1
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dfb
reflection
ofc
laser
modulator
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PCT/CN2018/113927
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English (en)
French (fr)
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沈红明
许奔波
宋小鹿
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华为技术有限公司
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Priority to PCT/CN2018/113927 priority Critical patent/WO2020093189A1/zh
Priority to JP2021523632A priority patent/JP2022506323A/ja
Priority to CN201880099187.1A priority patent/CN112956091A/zh
Publication of WO2020093189A1 publication Critical patent/WO2020093189A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Definitions

  • the present application relates to the field of optical devices, and in particular to an anti-reflection laser based on DFB (Distributed Feedback Laser).
  • DFB Distributed Feedback Laser
  • FIG. 1 is a schematic diagram of a conventional DFB laser structure.
  • the traditional DFB chip structure is composed of an electrode 101, a grating layer 102, an active MQW (Multiple Quantum Well) layer 103, an AR (Antireflection) end face 104, an HR (High-reflection) end face 105, etc. Composition, above the active MQW layer 103 is the grating layer 102.
  • the traditional DFB laser is very sensitive to external reflected light.
  • the intra-cavity mode of the DFB laser causes the signal power to fluctuate, which is manifested by the sharp deterioration of the RIN index, multi-mode output, line width broadening, and poor eye pattern quality. Therefore, in the traditional light source packaging scheme, an optical isolator is usually necessary to limit the interference of reflected light.
  • optical isolators are very expensive in light source packaging modules and are very bulky. Especially in multi-channel silicon optical integration applications, it is difficult to integrate an isolator between the laser and the optical waveguide.
  • optical isolator is a very effective and feasible way to reduce the cost of the optical module and achieve a highly sealed light source.
  • the low-cost miniaturized light source package without isolator and the single-mode laser with high anti-reflection capability are the current research hotspots in the field of optical fiber communication.
  • FIG. 2 is a schematic diagram of an existing partially etched grating PC-DFB laser.
  • the PC-DFB laser is composed of an electrode 201, a local grating layer 202, an active MQW layer 203, an AR end surface 204, an HR end surface 205, etc.
  • the layer 202 is a uniform refractive index grating.
  • the phase fluctuations in the cavity caused by the externally reflected light of the laser can be compensated, thereby Improve the anti-reflection capability of the laser.
  • the PC-DFB laser's ability to resist externally emitted light mainly comes from the formation of a very flat light field distribution in the non-grating area, which is not easily affected by external reflected light, so that the laser can maintain a stable longitudinal mode output. Therefore, the anti-reflection capability of the PC-DFB laser is closely related to the design of the grating length.
  • the ratio of the length L 2 of the optimized local grating layer to the total cavity length L of the entire DFB laser is generally between 0.5 and 0.7.
  • the disadvantage of this technical solution is that there is only one electrode, adopting a unified current injection method, and a long enough grating-free region is needed to meet certain phase conditions, so the length of the grating gain region is shortened and the luminous efficiency is reduced; in addition, the anti-reflection ability Due to the gain coefficient of the active quantum well, lasers with different cavity lengths and gain coefficients of quantum well design need to optimize the grating length design separately, which increases the design complexity to a certain extent, thereby reducing the technical feasibility.
  • the embodiments of the present invention provide an anti-reflection laser and an optical transmitter, so as to improve the anti-reflection capability of the laser and achieve the purpose of encapsulating the light source without an isolator.
  • an embodiment of the present invention provides an anti-reflection laser
  • the anti-reflection laser includes an optical feedback control unit OFC, a distributed feedback laser DFB, an n-type substrate, three electrodes, an electrical isolation region, and a highly reflective HR end face And anti-reflective AR end faces.
  • OFC and DFB are integrated on the n-type substrate
  • DFB stimulates the light emission by the corresponding power injection current
  • OFC adjusts the anti-reflection capability of the anti-reflection laser by controlling the intensity of the corresponding power injection current
  • the anti-reflection laser uses discrete electrodes
  • the structure is used to connect the power supply.
  • the three electrodes are distributed above the OFC, above the DFB and below the n-type substrate; the electrical isolation area is distributed between the OFC and the DFB to ensure sufficient electrical isolation between the two.
  • the optical feedback control unit OFC includes an OFC active layer
  • the distributed feedback laser DFB includes a DFB active layer, a p-type cladding layer, and a grating layer disposed above the DFB active layer, p-type cladding layer Cover the upper surface of the grating layer.
  • the OFC active layer is connected to the DFB active layer, and no grating structure is provided above the OFC active layer.
  • the grating layer may be any one of the following grating structures: uniform refractive index grating, phase shift grating, and gain-coupled grating structure.
  • the high-reflection HR end face includes a high-reflection film layer, which is plated on the outer side of the OFC away from the DFB, and its role is to obtain high luminescence Power output;
  • the anti-reflection AR end face includes an anti-reflection film layer, which is plated on the outer side of the DFB away from the OFC, and its role is to reduce the reflected light on the end face.
  • the OFC and the DFB are respectively powered by corresponding power sources of the two power sources.
  • the two power sources include two DC power sources, one of which supplies power to the OFC, and the other to supply power to the DFB;
  • the two power supplies include a DC power supply and a high-frequency signal power supply, the DC power supply supplies power to the optical feedback control unit OFC, and the high-frequency signal power supply supplies power to the DFB, at which time the DFB outputs modulated light.
  • the anti-reflection laser includes a modulator, another electrode than the three electrodes, and the electrical isolation Another electrically isolated region outside the region; wherein, the modulator is integrated on the n-type substrate, the modulator is located on the side of the anti-reflection laser away from the OFC, and the modulator pair
  • the output light of the DFB is intensity-modulated; the other electrode section is above the modulator, and the modulator is powered by another power supply than the two power supplies; the other electrical isolation division Between the DFB and the modulator, for forming electrical isolation between the DFB and the modulator.
  • the high-reflection HR end face includes a high-reflection film layer, which is plated on the outer side of the OFC away from the DFB, and its function is to obtain high luminous power output;
  • the anti-reflection AR end face It includes an anti-reflection film layer, which is plated on the outer side of the modulator away from the DFB, and its role is to reduce the reflected light on the end surface.
  • the modulator is an electro-absorption modulator or a Mach-Zehnder modulator.
  • one DC power supply powers the OFC
  • another DC power supply powers the DFB
  • a high-frequency signal power supply powers the modulator.
  • the modulator is used to modulate the light intensity of the DFB output light.
  • an embodiment of the present invention provides an optical transmitter.
  • the optical transmitter includes the anti-reflection laser and the coupler in the first possible implementation manner of the first aspect and the second possible implementation manner.
  • the coupler includes an optical fiber coupling device or a waveguide coupling device; the anti-reflection laser is coupled with the coupler.
  • the optical transmitter can realize multi-channel integration.
  • the fiber coupling device includes a collimating lens and a coupling lens introduced between the DFB in the anti-reflection laser and an external fiber; or, the fiber coupling device includes a lens fiber, the A ball lens is made on the end face of the optical fiber for coupling; or, the optical fiber coupling device includes a collimating lens and two coupling lenses introduced between the DFB in the anti-reflection laser and the external optical fiber.
  • the waveguide coupling device is aligned with the DFB in the anti-reflection laser, and the waveguide coupling device includes a silicon-based waveguide or an InP-based waveguide.
  • the electrically isolated regions of the embodiments of the present invention are formed by etching or ion implantation.
  • the OFC and DFB of the embodiments of the present invention adopt the ridge waveguide structure or the buried waveguide structure.
  • the structure of the anti-reflection laser provided by the embodiment of the present invention is to introduce a section of the optical feedback control unit OFC in the conventional full-grating DFB laser, and at the HR end surface of the optical feedback control unit OFC and the full-grating layer of the distributed feedback laser DFB A stable light field distribution is formed between; on the other hand, unlike the prior art PC-DFB laser, its anti-reflection capability requires a long enough grating-free zone length in the laser cavity to provide phase compensation, the present invention uses a discrete electrode structure , By adjusting the DC power injection current intensity of the optical feedback control unit OFC, the effective refractive index of the OFC region of the optical feedback control unit is effectively changed, thereby effectively adjusting the phase of the OFC region of the optical feedback control unit, as Suitable phase conditions are provided between the high-reflection HR end face and the full grating layer, thereby compensating the laser's intra-cavity phase fluctuations caused by externally reflected light, improving the tolerance of the laser's external light feedback, that
  • optical transmitter structure provided by the embodiment of the present invention is coupled with the coupler on the basis of the anti-reflection laser structure provided by the embodiment of the present invention, and can realize on-chip multi-channel integration.
  • the anti-reflection laser and optical transmitter provided by the embodiments of the present invention significantly improve the anti-reflection capability of the laser, can realize the light source without isolator package, greatly reduce the package size and device size, and meet the needs of high-capacity miniaturization and high sealing ,
  • To achieve multi-channel light source integration does not need to independently optimize the grating design, compatible with existing process platforms, greatly simplifying the process complexity.
  • Figure 1 is a schematic diagram of the structure of a traditional DFB laser
  • FIG. 2 is a schematic diagram of the structure of a PC-DFB laser in the prior art
  • 3a is a schematic structural diagram of an anti-reflection laser according to a first embodiment of the present invention.
  • 3b is a schematic diagram of the internal structure of OFC and DFB of an anti-reflection laser according to the first embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of an anti-reflection laser according to a second embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an optical transmitter according to a third embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a multi-channel integrated structure of an optical transmitter according to a third embodiment of the present invention.
  • FIG. 7a is a schematic diagram of a ridge waveguide provided by an embodiment of the present invention.
  • FIG. 7b is a schematic diagram of a buried waveguide provided by an embodiment of the present invention.
  • FIG. 3a is a schematic structural diagram of an anti-reflection laser according to the first embodiment of the present invention.
  • the anti-reflection laser 300 shown in FIG. 3a includes an OFC (Optical Feedback Controller, optical feedback control unit) 310, DFB 320, n-type substrate 330, electrode 340, electrode 350, electrode 360, electrical isolation region 370, HR end face 380 and AR end face 390.
  • OFC Optical Feedback Controller, optical feedback control unit
  • OFC310 and DFB320 are integrated on n-type substrate 330, DFB320 stimulates light emission by corresponding power injection current, OFC310 adjusts the antireflection capability of antireflection laser 300 by controlling the intensity of the corresponding power injection current; antireflection laser 300 uses Discrete electrode structure, used to connect the power supply, electrode 340 is distributed above OFC310, electrode 350 is distributed above DFB320, electrode 360 is plated under n-type substrate 330; electrode 340 and electrode 350 are separated by electrical isolation area 370 The isolation region 370 can ensure that the electrode 340 and the electrode 350 are electrically isolated.
  • the backlight direction of the anti-reflection laser 300 is the outer side surface of the HR end surface 380, and the light emitting direction is the outer side surface of the AR end surface 390.
  • the HR end surface 380 includes a highly reflective film layer, which is plated on the outer side of the OFC 310 away from the DFB 320, and its function is to obtain high luminous power output;
  • the AR end surface 390 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of DFB320 away from OFC310, its function is to reduce the reflected light on the end surface.
  • the electrode 340 of this embodiment may be injected with a DC power supply to adjust the anti-reflection capability of the anti-reflection laser 300.
  • the electrode 350 may be injected with a DC power source to excite the anti-reflection laser 300 to emit light and output continuous light; or the electrode 350 may also be input with a high-frequency signal power source, and the DFB 320 may output an optical modulation signal at this time.
  • OFC310 and DFB320 are independently controlled, which can effectively improve the injection efficiency of OFC310 current.
  • the electrical isolation region 370 is formed by etching or ion implantation to ensure sufficient electrical isolation between the OFC310 and the DFB320.
  • FIG. 3b is a schematic diagram of the internal structure of OFC and DFB of an anti-reflection laser according to the first embodiment of the present invention.
  • OFC 310 includes an OFC active region 311
  • DFB 320 includes a DFB active region 321, a grating layer 322, and a p-type cladding layer 323.
  • the grating layer 322 is disposed over the entire surface of the DFB active region 321.
  • the p-type cladding layer 323 covers the upper surface of the grating layer 322.
  • the OFC active area 311 and the DFB active area 321 are connected, and no grating structure is provided above the OFC active area 311.
  • the grating layer 322 may be any one of the following grating structures: uniform refractive index grating, phase shift grating, and gain coupling grating structure.
  • the OFC active region 311 and the DFB active region 321 adopt the same or different multi-quantum well active layer structure, and the quantum well material may be InGaAsP or InGaAlAs.
  • the OFC active region 311 and the DFB active region 321 use the same multi-quantum well structure, which only needs one epitaxial growth, which greatly reduces the complexity and cost of the chip manufacturing process, and at the same time, reduces the light from DFB-MQW321 to OFC -The light loss and light reflection of MQW311 transmission improve the anti-reflection performance to a certain extent.
  • the cavity length of the DFB320 is set to 250-450 ⁇ m
  • the cavity length of the OFC310 is set to 50-150 ⁇ m
  • the length of the electrical isolation region 370 is set to 20-50 ⁇ m.
  • the anti-reflection laser 400 shown in FIG. 4 includes OFC410, DFB420, modulator 430, n-type substrate 440, HR end face 450, AR end face 460, electrode 470, electrode 480, electrode 490, electrode 4100, electrical isolation region 4110 and Electrical isolation zone 4120.
  • OFC410, DFB420 and modulator 430 are integrated on n-type substrate 440, modulator 430 is disposed on the side of DFB420 away from OFC410, and is coupled with DFB420; anti-reflection laser 400 uses a discrete electrode structure for connecting the power supply, and electrode 470 is distributed Above OFC 410, electrode 480 is distributed over DFB 420, electrode 490 is distributed over modulator 430, electrode 470 and electrode 480 are separated by electrical isolation zone 4110, and electrode 480 and electrode 490 are separated by electrical isolation zone 4120.
  • the electrical isolation region 4110 and the electrical isolation region 4120 can ensure that the electrode 470, the electrode 480, and the electrode 490 form sufficient electrical isolation from each other, and the electrode 4100 is plated under the n-type substrate 440.
  • the backlight direction of the anti-reflection laser 400 is the side surface of the HR end surface 450
  • the light emitting direction is the side surface of the AR end surface 440.
  • the HR end face 450 includes a highly reflective film layer, which is plated on the outer side of the OFC 410 away from the DFB 420, and its function is to obtain high luminous power output;
  • the AR end face 460 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of the modulator 430 away from the DFB 420, its function is to reduce the reflected light on the end surface.
  • the electrode 470 of this embodiment is injected with a DC power supply to adjust the anti-reflective capability of the anti-reflective laser 400.
  • the electrical isolation region 4110 and the electrical isolation region 4120 are formed by etching or ion implantation to ensure that the OFC410, DFB420, and modulator 430 have sufficient electrical isolation from each other to prevent crosstalk during high-speed modulation and affect transmission performance.
  • OFC410 and DFB420 are shown in the related description in FIG. 3b, and will not be repeated here.
  • the modulator 430 may be an EAM (Electro Absorption Modulator) or an MZM (Mach-Zehnder Modulator), which is used to intensity-modulate the output light of the DFB 420.
  • EAM Electro Absorption Modulator
  • MZM Machine-Zehnder Modulator
  • the optical transmitter 500 shown in FIG. 5 includes OFC 510, DFB 520, n-type substrate 530, electrode 540, electrode 550, electrode 560, electrically isolated region 570, HR end face 580, AR end face 590, and coupler 5100.
  • OFC510 and DFB520 are integrated on n-type substrate 530; optical transmitter 500 uses a discrete electrode structure for connecting to the power supply, electrode 540 is distributed above OFC510, electrode 550 is distributed above DFB520, electrode 560 is plated under n-type substrate Square; the electrode 540 and the electrode 550 are separated by an electrical isolation region 570, the electrical isolation region 570 can ensure that the electrode 540 and the electrode 550 form electrical isolation; the coupler 5100 is disposed on the outer side of the DFB520 away from the OFC510, and with the DFB520 coupling.
  • OFC510 and DFB520 are shown in the related description in FIG. 3b, and will not be repeated here.
  • the backlight direction of the optical transmitter 500 is the side surface of the HR end surface 580, and the light emitting direction is the side surface of the AR end surface 590.
  • the electrode 540 of this embodiment may be injected with a DC power supply to adjust the anti-reflection capability of the optical transmitter 400.
  • the HR end face 480 includes a highly reflective film layer, which is plated on the outer side of the OFC 510 away from the DFB 520, and its function is to obtain high luminous power output;
  • the AR end face 590 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of the modulator 530 away from the DFB 520, its role is to reduce the reflected light on the end surface.
  • the electrode 550 may be injected with a DC power source to excite the optical transmitter 500 to emit light and output continuous light; or the electrode 550 may also be input with a high-frequency signal power source, and the DFB 520 may output an optical modulation signal at this time.
  • OFC510 and DFB520 are independently controlled, which can effectively improve the injection efficiency of OFC510 current.
  • the electrical isolation region 570 is formed by etching or ion implantation to ensure sufficient electrical isolation between the OFC510 and the DFB520 to prevent crosstalk during high-speed modulation and affect transmission performance.
  • the coupler 5100 is an isolator-free optical coupling device, and transmits the light output from the optical transmitter to an optical receiver at a far end through an optical fiber. .
  • the optical coupling device may be an optical fiber coupling device.
  • the fiber coupling device includes a collimating lens and a coupling lens introduced between the DFB520 and the external fiber; or, the fiber coupling device includes a lens fiber, and a ball lens is made on the end face of the fiber for coupling;
  • the optical fiber coupling device includes a collimating lens and two coupling lenses introduced between the DFB520 and the external optical fiber.
  • the optical coupling device may be a waveguide coupling device.
  • the waveguide coupling device includes a silicon-based waveguide or an InP-based waveguide.
  • the DFB520 is aligned and coupled with the silicon-based waveguide or the InP-based waveguide.
  • the optical signal output by the DFB520 may be in the waveguide Transmission, can realize on-chip multi-channel light source integration.
  • FIG. 6 is a schematic diagram of a multi-channel integrated structure of an optical transmitter according to a third embodiment of the present invention.
  • Fig. 6 shows the structure of the optical transmitter on-chip multi-channel light source integrated 600 when the coupler 5100 is a waveguide coupling device, including 610 anti-reflection laser and 620 waveguide coupling device.
  • the ridge waveguide 710 shown in FIG. 7a includes an n-type substrate 711, an active layer 712, and a p-type cladding layer 713.
  • the ridge waveguide 720 shown in FIG. 7b includes an n-type substrate 721, an active layer 722, and a p-type cladding layer 723.
  • the OFC and DFB of the embodiment of the present invention adopt the ridge waveguide structure or the buried waveguide structure.
  • the anti-reflection laser structure provided by the embodiment of the present invention is to introduce a short optical feedback control unit OFC outside the traditional DFB laser without a grating to form a stable light between the HR end surface of the OFC and the grating layer of the DFB Field distribution;
  • a discrete electrode structure is used to change the effective refractive index of the OFC region by adjusting the DC power injection intensity of the OFC, thereby effectively adjusting the phase of the OFC region, and providing suitable phase conditions between the HR end face and the DFB grating. Therefore, the phase fluctuations in the cavity caused by the external reflected light of the laser are compensated, and the tolerance of the external light feedback of the laser is improved, that is, the anti-reflection ability is improved.
  • optical transmitter structure provided by the embodiment of the present invention is coupled with the coupler on the basis of the anti-reflection laser structure provided by the embodiment of the present invention, and can realize on-chip multi-channel integration.
  • the anti-reflection laser and the optical transmitter provided by the embodiments of the present invention greatly improve the anti-reflection capability of the laser, can realize the light source without isolator package, greatly reduce the package size and device size, and meet the high-capacity miniaturization and high-sealing requirements It realizes multi-channel integration of light source, does not need to independently optimize the grating design, is compatible with the existing process platform, and simplifies the process complexity.
  • control unit that implements the above-mentioned embodiments may be completed by hardware, or by a program instructing related hardware.
  • the program may be stored in a computer-readable storage medium.
  • the storage medium can be read-only memory, random access memory, etc.
  • control unit When the control unit is implemented using software, the method steps described in the above embodiments may be implemented in whole or in part in the form of a computer program product.
  • the computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on the computer, the processes or functions according to the embodiments of the present application are generated in whole or in part.
  • the computer may be a general-purpose computer, a dedicated computer, a computer network, or other programmable devices.
  • the computer instructions may be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be from a website site, computer, server or data center Transmit to another website, computer, server or data center via wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.).
  • the computer-readable storage medium may be any available medium that can be accessed by a computer or a data storage device including a server, a data center, and the like integrated with one or more available media.
  • the usable medium may be a magnetic medium (for example, a floppy disk, a hard disk, a magnetic tape), an optical medium (for example, a DVD), or a semiconductor medium (for example, Solid State Disk (SSD)) or the like.
  • a magnetic medium for example, a floppy disk, a hard disk, a magnetic tape
  • an optical medium for example, a DVD
  • a semiconductor medium for example, Solid State Disk (SSD)

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Abstract

一种抗反射激光器(300)，在光反馈控制单元OFC(310)的高反射端面(380)和分布式反馈激光器(320)的光栅层(322)之间形成一个稳定的纵模光场分布；采用分立电极结构，通过调节OFC(310)的直流电源注入电流强度改变OFC(310)区域的有效折射率，从而对激光器(300)因外反射光引起的腔内相位涨落进行补偿，提高了抗反射能力。可以实现光源无隔离器封装，降低了封装和器件尺寸，满足大容量小型化的高密封装需求，实现光源多通道集成，简化了工艺复杂度。

Description

一种抗反射激光器 技术领域
本申请涉及光器件领域，尤其涉及一种基于DFB(Distributed Feedback Laser，分布式反馈激光器)的抗反射激光器。
背景技术
DFB激光器因为具有大功率、高单模特性(即高边模抑制比SMSR)、窄线宽、低成本等优势，是当前高速光纤传输网中通用的理想信号光发射源，被广泛应用在数据中心、接入网、城域长距离传输等场景中。图1为传统DFB激光器结构示意图。传统的DFB芯片结构由电极101、光栅层102、有源MQW(Multiple Quantum Well，多量子阱)层103、AR(Antireflection，抗反射)端面104、HR(High-reflection，高反射)端面105等组成，在有源MQW层103上方为光栅层102。传统的DFB激光器对外反射光是非常敏感的，较强的外反射光会引起腔内的光场、载流子浓度、有效折射率等变化，激光器的相位条件也随之发生改变，从而改变了DFB激光器腔内模式，从而引起信号功率涨落，表现为RIN指标急剧恶化，多模输出，线宽展宽，眼图质量变差等。因此，在传统光源封装方案中通常光隔离器是必不可少的，用来限制反射光的干扰。然而，光隔离器在光源封装模块里是非常昂贵的，而且体积很大，尤其在多通道硅光集成应用中，很难在激光器与光学波导之间集成隔离器。因此，消除光隔离器是降低光模块成本，实现光源高密封装的一种非常有效可行的途径。无隔离器的低成本小型化光源封装以及高抗反射能力的单模激光器是目前光纤通信领域研究的热点。
图2为现有的一种部分刻蚀光栅PC-DFB激光器示意图。PC-DFB激光器由电极201、局部光栅层202、有源MQW层203、AR端面204、HR端面205等组成，在有源MQW层203上方只有局部光栅层202，如图2所示，局部光栅层202为均匀折射率光栅，该结构只有一个电极201，电流统一注入到有光栅区域和无光栅区域。从抗反射原理看，通过改变无光栅区域的一些物理参数，如光场分布、无光栅区域长度、载流子浓度等，可以对激光器因外反射光引起的腔内相位涨落进行补偿，从而提高激光器的抗反射能力。PC-DFB激光器抗外发射光的能力主要来自于无光栅区域内形成了一个非常平坦的光场分布，该光场不易受外反射光的影响，使得激光器可以维持稳定的纵向模式输出。因此，PC-DFB激光器的抗反射能力与光栅长度的设计密切相关，当激光器的腔长L固定时，通过改变光栅结构长度L 2，也就是相对改变无光栅区的长度L 1(L 1＝L﹣L 2)，来提供合适的相位条件；优化的局部光栅层的长度L 2与整个DFB激光器总腔长L之比一般为0.5～0.7之间。该技术方案的缺点是只有一个电极，采用统一电流注入方式，需要足够长的无光栅区来满足一定的相位条件，因此缩短了光栅增益区的长度，降低了发光效率；另外，抗反射能力还与有源量子阱的增益系数有关，使得不同腔长及增益系数的量子阱设计的激光器需要分别优化光栅长度设计，一定程度上增加了设计复杂性，从而降低技术可行性。
发明内容
有鉴于此，本发明实施例提供一种抗反射激光器和一种光发射机，以达到提高激光器的抗反射能力，实现光源无隔离器封装的目的。
第一方面，本发明实施例提供了一种抗反射激光器，该抗反射激光器包括光反馈控制单元OFC、分布式反馈激光器DFB、n型衬底、三个电极、电隔离区、高反射HR端面和抗反射AR端面。其中，OFC和DFB集成在n型衬底上，DFB通过对应的电源注入电流激励发光，OFC通过控制对应的电源注入电流的强度来调节该抗反射激光器的抗反射能力；抗反射激光器采用分立电极结构，用于连接电源，三个电极分别分布在OFC上方、DFB上方和n型衬底下方；电隔离区分布在OFC和DFB之间，保证两者之间形成足够的电隔离。
在一种具体的设计中，光反馈控制单元OFC包括OFC有源层，分布式反馈激光器DFB包括DFB有源层、p型覆盖层和在DFB有源层上方设置的光栅层，p型覆盖层覆盖在光栅层上表面。OFC有源层和DFB有源层相连，OFC有源层上方不设置光栅结构。
在一种可能的设计中，光栅层可以是如下光栅结构中的任意一种：均匀折射率光栅、相移光栅和增益耦合光栅结构。
在第一方面第一种可能的实现方式中，高反射HR端面包括高反射膜层，所述高反射膜层镀在所述OFC远离所述DFB的外侧面，其作用是为了获得高的发光功率输出；抗反射AR端面包括抗反射膜层，所述抗反射膜层镀在所述DFB远离所述OFC的外侧面，其作用是减小端面反射光。
在一种具体的设计中，OFC和DFB分别通过两个电源中各自对应的电源供电，所述两个电源包括两个直流电源，其中一个直流电源给OFC供电，另一个直流电源给DFB供电；或者，所述两个电源包括一个直流电源和一个高频信号电源，所述直流电源给光反馈控制单元OFC供电，所述高频信号电源给DFB供电，此时DFB输出调制光。
结合第一方面第一种可能的实现方式，在第一方面第二种可能的实现方式中，所述抗反射激光器包括调制器，所述三个电极之外的另一个电极，所述电隔离区之外的另一个电隔离区；其中，所述调制器集成在所述n型衬底上，所述调制器位于所述抗反射激光器中远离所述OFC的一侧，所述调制器对所述DFB的输出光进行强度调制；所述另一个电极分部在所述调制器上方，所述调制器通过所述两个电源之外的另一个电源供电；所述另一个电隔离区分部在所述DFB与所述调制器之间，用于在所述DFB和所述调制器之间形成电隔离。
进一步地，所述高反射HR端面包括高反射膜层，高反射膜层镀在所述OFC的远离所述DFB的外侧面，其作用是为了获得高的发光功率输出；所述抗反射AR端面包括抗反射膜层，抗反射膜层镀在所述调制器的远离所述DFB的外侧面，其作用是减小端面反射光。
在一种可能的设计中，所述调制器为电吸收调制器或马赫曾德尔调制器。
在一种具体的设计中，一个直流电源给OFC供电，另一个直流电源给DFB供电，一个高频信号电源给调制器供电，调制器用于对DFB输出光进行光强度调制。
第二方面，本发明实施例提供了一种光发射机。该光发射机包括了第一方面第一种可能的实现方式、第二种可能的实现方式中的抗反射激光器和耦合器。所述耦合器 包括光纤耦合装置或波导耦合装置；所述抗反射激光器与耦合器耦合。该光发射机可实现多通道集成。
在一种具体的设计中，所述光纤耦合装置包括在抗反射激光器中的DFB和外部光纤之间引入的一个准直透镜和一个耦合透镜；或者，所述光纤耦合装置包括透镜光纤，所述光纤端面制作一个球透镜用来耦合；或者，所述光纤耦合装置包括在抗反射激光器中的DFB和外部光纤之间引入的一个准直透镜和两个耦合透镜。
在一种具体的设计中，所述波导耦合装置与抗反射激光器中的DFB对准耦合，所述波导耦合装置包括硅基波导或者InP基波导。
结合第一方面、第二方面，本发明实施例的电隔离区采用刻蚀或离子注入方式形成。
结合第一方面、第二方面，本发明实施例的OFC和DFB采用所述脊型波导结构或者是掩埋型波导结构。
本发明实施例提供的抗反射激光器结构，是在传统的全光栅DFB激光器引入一段所述光反馈控制单元OFC，在所述光反馈控制单元OFC的HR端面和分布式反馈激光器DFB的全光栅层之间形成稳定的光场分布；另一方面，不同于现有技术PC-DFB激光器，其抗反射能力需要足够长的激光腔内的无光栅区长度来提供相位补偿，本发明采用分立电极结构，通过调节所述光反馈控制单元OFC的直流电源注入电流强度有效改变了所述光反馈控制单元OFC区域的有效折射率，进而有效调节了所述光反馈控制单元OFC区域的相位，为所述高反射HR端面和所述全光栅层之间提供了合适的相位条件，从而对激光器因外反射光引起的腔内相位涨落进行补偿，提高了激光器对外光反馈的容忍度，即提高了抗反射能力。
本发明实施例提供的光发射机结构，是在本发明实施例提供的抗反射激光器结构的基础上与耦合器耦合，可实现片上多通道集成。
基于以上，本发明实施例提供的抗反射激光器和光发射机显著提高了激光器的抗反射能力，可以实现光源无隔离器封装，大大降低了封装尺寸和器件尺寸，满足大容量小型化的高密封装需求，实现光源多通道集成，不需要独立优化光栅设计，兼容现有工艺平台，大大简化了工艺复杂度。
附图说明
为了更清楚地说明本发明的实施例或现有技术中的技术方案，下面将对描述背景技术和实施例时所使用的附图作简单的介绍。显而易见地，下面附图中描述的仅仅是本发明的一部分实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图和描述得到其他的附图或实施例，而本发明旨在涵盖所有这些衍生的附图或实施例。
图1为传统DFB激光器结构示意图；
图2为现有技术中PC-DFB激光器结构示意图；
图3a为本发明第一实施例提供的一种抗反射激光器结构示意图；
图3b为本发明第一实施例提供的一种抗反射激光器的OFC和DFB内部结构示意图；
图4为本发明第二实施例提供的一种抗反射激光器结构示意图。
图5为本发明第三实施例提供的一种光发射机结构示意图；
图6为本发明第三实施例提供的一种光发射机多通道集成结构示意图；
图7a为本发明实施例提供的一种脊波导示意图；
图7b为本发明实施例提供的一种掩埋波导示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图3a为本发明第一实施例提供的一种抗反射激光器结构示意图。如图3a所示的抗反射激光器300包括OFC(Optical Feedback Controller，光反馈控制单元)310、DFB320、n型衬底330、电极340、电极350、电极360、电隔离区370、HR端面380和AR端面390。其中，OFC310和DFB320集成在n型衬底330上，DFB320通过对应的电源注入电流激励发光，OFC310通过控制对应的电源注入电流的强度来调节抗反射激光器300的抗反射能力；抗反射激光器300采用分立电极结构，用于连接电源，电极340分布在OFC310上方，电极350分布在DFB320上方，电极360镀在n型衬底330下方；电极340和电极350之间通过电隔离区370隔开，电隔离区370可以保证电极340和电极350之间形成电隔离。
具体地，抗反射激光器300的背光方向为HR端面380的外侧面，出光方向为AR端面390的外侧面。
进一步地，HR端面380包括高反射膜层，高反射膜层镀在OFC310的远离DFB320的外侧面，其作用是为了获得高的发光功率输出；AR端面390包括抗反射膜层，抗反射膜层镀在DFB320的远离OFC310的外侧面，其作用是减小端面反射光。
具体地，本实施例电极340可以采用直流电源注入，用来调控抗反射激光器300的抗反射能力，注入电流越大，抗反射能力越强。
可选地，电极350可以采用直流电源注入，用来激励抗反射激光器300发光，输出连续光；或者电极350还可以采用高频信号电源输入，此时DFB320可输出光调制信号。
由于采用分立电极结构，OFC310和DFB320独立调控，可以有效提高OFC310电流的注入效率。
具体地，电隔离区370采用刻蚀或离子注入方式形成，保证OFC310与DFB320之间具有足够的电隔离。
图3b为本发明第一实施例提供的一种抗反射激光器的OFC和DFB内部结构示意图。如图3b所示的OFC310包括OFC有源区311，DFB320包括DFB有源区321、光栅层322以及p型覆盖层323，光栅层322设置在DFB有源区321全部表面上方，p型覆盖层323覆盖在光栅层322上表面。
具体地，OFC有源区311和DFB有源区321相连，OFC有源区311上方不设置光栅结构。
可选地，光栅层322可以是如下光栅结构中的任意一种：均匀折射率光栅、相移光 栅和增益耦合光栅结构。
具体地，OFC有源区311和DFB有源区321采用相同或者相异的多量子阱有源层结构，量子阱材料可以是InGaAsP或者是InGaAlAs。
优选地，OFC有源区311和DFB有源区321采用相同多量子阱结构，只需要一次外延生长，极大降低了芯片制造工艺复杂度和成本，同时，减少了光从DFB-MQW321到OFC-MQW311传输的光损耗以及光反射，在一定程度上提高了抗反射性能。
优选地，DFB320的腔长设置为250-450μm，OFC310的腔长设置为50-150μm，电隔离区370长度设置为20-50μm。
图4为本发明第二实施例提供的一种抗反射激光器结构示意图。如图4所示的抗反射激光400包括OFC410、DFB420、调制器430、n型衬底440、HR端面450、AR端面460、电极470、电极480、电极490、电极4100、电隔离区4110和电隔离区4120。其中，OFC410、DFB420和调制器430集成在n型衬底440上，调制器430设置在DFB420远离OFC410的侧面，与DFB420耦合；抗反射激光器400采用分立电极结构，用于连接电源，电极470分布在OFC410上方，电极480分布在DFB420上方，电极490分布在调制器430上方，电极470和电极480之间通过电隔离区4110隔开，电极480和电极490之间通过电隔离区4120隔开，电隔离区4110和电隔离区4120可以保证电极470、电极480和电极490彼此之间形成足够的电隔离，电极4100镀在n型衬底440下方。
具体地，抗反射激光器400的背光方向为HR端面450的侧面，出光方向为AR端面440的侧面。
进一步地，HR端面450包括高反射膜层，高反射膜层镀在OFC410的远离DFB420的外侧面，其作用是为了获得高的发光功率输出；AR端面460包括抗反射膜层，抗反射膜层镀在调制器430的远离DFB420的外侧面，其作用是减小端面反射光。
具体地，本实施电极470采用直流电源注入，用来调控抗反射激光器400的抗反射能力，注入电流越大，抗反射能力越强；电极480采用直流电源注入，用来激励抗反射激光器400发光，输出连续光；电极490采用高频信号电源输入。由于采用分立电极结构，OFC410和DFB420独立调控，可以有效提高OFC410电流的注入效率。
具体地，电隔离区4110和电隔离区4120采用刻蚀或离子注入方式形成，保证OFC410、DFB420和调制器430彼此之间具有足够的电隔离，防止在高速调制时发生串扰，影响传输性能。
具体地，OFC410、DFB420内部结构见图3b相关描述，此处不再赘述。
具体地，调制器430可以是EAM(Electro Absorption Modulator，电吸收调制器)，也可以是MZM(Mach-Zehnder modulator，马赫曾德尔调制器)，用来对DFB420的输出光进行强度调制。
图5为本发明第三实施例提供的一种光发射机结构示意图。如图5所示的光发射机500包括OFC510、DFB520、n型衬底530、电极540、电极550、电极560、电隔离区570、HR端面580、AR端面590和耦合器5100。其中，OFC510和DFB520集成在n型衬底530上；光发射机500采用分立电极结构，用于连接电源，电极540分布在OFC510上方，电极550分布在DFB520上方，电极560镀在n型衬底下方；电极540和电极550之间通过电隔离区570隔开，电隔离区570可以保证电极540和电极550之间形成电隔离；耦合器5100 设置在DFB520的远离OFC510的外侧面，并与DFB520耦合。
具体地，OFC510、DFB520内部结构见图3b相关描述，此处不再赘述。
具体地，光发射机500的背光方向为HR端面580的侧面，出光方向为AR端面590的侧面。
具体地，本实施例电极540可以采用直流电源注入，用来调控光发射机400的抗反射能力，注入电流越大，抗反射能力越强。
进一步地，HR端面480包括高反射膜层，高反射膜层镀在OFC510的远离DFB520的外侧面，其作用是为了获得高的发光功率输出；AR端面590包括抗反射膜层，抗反射膜层镀在调制器530的远离DFB520的外侧面，其作用是减小端面反射光。
可选地，电极550可以采用直流电源注入，用来激励光发射机500发光，输出连续光；或者电极550还可以采用高频信号电源输入，此时DFB520可输出光调制信号。
由于采用分立电极结构，OFC510和DFB520独立调控，可以有效提高OFC510电流的注入效率。
具体地，电隔离区570采用刻蚀或离子注入方式形成，保证OFC510与DFB520之间具有足够的电隔离，防止在高速调制时发生串扰，影响传输性能。
具体地，耦合器5100是一种无隔离器的光耦合装置，将所述光发射机输出的光通过光纤传输给远端的光接收机。。
可选地，所述光耦合装置可以是光纤耦合装置。具体地，所述光纤耦合装置包括在DFB520和外部光纤之间引入的一个准直透镜和一个耦合透镜；或者，所述光纤耦合装置包括透镜光纤，所述光纤端面制作一个球透镜用来耦合；或者，所述光纤耦合装置包括在DFB520和外部光纤之间引入的一个准直透镜和两个耦合透镜。
可选地，所述光耦合装置可以是波导耦合装置，所述波导耦合装置包括硅基波导或者InP基波导，DFB520与硅基波导或者InP基波导对准耦合，DFB520输出的光信号可以在波导里传输，可实现片上多通道光源集成。
图6为本发明第三实施例提供的一种光发射机多通道集成结构示意图。图6展示了耦合器5100为波导耦合装置时，光发射机在片上多通道光源集成600的结构，包括610抗反射激光器和620波导耦合装置。
图7a为本发明实施例提供的一种脊型波导示意图。如图7a所示的脊波导710包括n型衬底711、有源层712和p型覆盖层713。
图7b为本发明实施例提供的一种掩埋型波导示意图。如图7b所示的脊波导720包括n型衬底721、有源层722和p型覆盖层723。
优选地，本发明实施例的OFC和DFB采用所述脊型波导结构或者是掩埋型波导结构。
本发明实施例提供的抗反射激光器结构，是在传统的DFB激光器外引入一段较短的不设置光栅的光反馈控制单元OFC，在OFC的HR端面和DFB的光栅层之间形成一个稳定的光场分布；另外采用分立电极结构，通过调节OFC的直流电源注入强度改变OFC区域的有效折射率，进而有效调节了OFC区域的相位，为HR端面和DFB的光栅之间提供了合适的相位条件，从而对激光器因外反射光引起的腔内相位涨落进行补偿，提高了激光器对外光反馈的容忍度，即提高了抗反射能力。
本发明实施例提供的光发射机结构，是在本发明实施例提供的抗反射激光器结构的基础上与耦合器耦合，可实现片上多通道集成。
基于以上，本发明实施例提供的抗反射激光器和光发射机大大提高了激光器的抗反射能力，可以实现光源无隔离器封装，大大降低了封装尺寸和器件尺寸，满足大容量小型化的高密封装需求，实现光源多通道集成，不需要独立优化光栅设计，兼容现有工艺平台，简化了工艺复杂度。
本领域普通技术人员可以理解实现上述实施例的控制单元可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，随机接入存储器等。上述的控制单元功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超出本申请的范围。
当控制单元使用软件实现时，上述实施例描述的方法步骤可以全部或部分地以计算机程序产品的形式实现。所述计算机程序产品包括一个或多个计算机指令。在计算机上加载和执行所述计算机程序指令时，全部或部分地产生按照本申请实施例所述的流程或功能。所述计算机可以是通用计算机、专用计算机、计算机网络、或者其他可编程装置。所述计算机指令可以存储在计算机可读存储介质中，或者从一个计算机可读存储介质向另一个计算机可读存储介质传输，例如，所述计算机指令可以从一个网站站点、计算机、服务器或数据中心通过有线(例如同轴电缆、光纤、数字用户线(DSL))或无线(例如红外、无线、微波等)方式向另一个网站站点、计算机、服务器或数据中心进行传输。所述计算机可读存储介质可以是计算机能够存取的任何可用介质或者是包含一个或多个可用介质集成的服务器、数据中心等数据存储设备。所述可用介质可以是磁性介质，(例如，软盘、硬盘、磁带)、光介质(例如，DVD)、或者半导体介质(例如固态硬盘Solid State Disk(SSD))等。
最后应说明的是：以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (14)

  1. 一种抗反射激光器，其特征在于，所述抗反射激光器包括：光反馈控制单元OFC、分布式反馈激光器DFB、n型衬底、电隔离区、高反射HR端面、抗反射AR端面和三个金属电极，其中：
    所述光反馈控制单元OFC和所述DFB集成在所述半导体n型衬底上，所述三个电极各自分布在所述OFC上方、所述DFB上方和所述n型衬底下方，所述三个电极用于连接电源；
    所述OFC和所述DFB分别通过两个电源中各自对应的电源供电，所述DFB通过对应的电源注入电流激励发光，所述OFC通过控制对应的电源注入电流的强度来调节所述抗反射激光器的抗反射能力；
    所述电隔离区分布在所述OFC和所述DFB之间，用于在所述OFC和所述DFB之间形成电隔离；
    所述OFC包括OFC有源层，所述DFB包括DFB有源层、p型覆盖层和在所述DFB有源层表面上方设置的光栅层；
    所述p型覆盖层覆盖在所述光栅层上表面。
  2. 如权利要求1所述的抗反射激光器，其特征在于，所述OFC有源层和所述DFB有源层相连，所述OFC有源层上方不设置光栅层。
  3. 如权利要求1所述的抗反射激光器，其特征在于，所述高反射HR端面包括高反射膜层，所述高反射膜层镀在所述OFC远离所述DFB的外侧面；所述抗反射AR端面包括抗反射膜层，所述抗反射膜层镀在所述DFB远离所述OFC的外侧面。
  4. 如权利要求1所述的抗反射激光器，其特征在于，所述两个电源包括两个直流电源，其中一个直流电源给OFC供电，另一个直流电源给DFB供电。
  5. 如权利要求1所述的抗反射激光器，其特征在于，所述两个电源包括一个直流电源和一个高频信号电源，所述直流电源给光反馈控制单元OFC供电，所述高频信号电源给DFB供电。
  6. 如权利要求1所述的抗反射激光器，其特征在于，还包括调制器，所述三个电极之外的另一个电极，所述电隔离区之外的另一个电隔离区；其中，所述调制器集成在所述n型衬底上，所述调制器位于所述抗反射激光器中远离所述OFC的一侧，所述调制器对所述DFB的输出光进行强度调制；所述另一个电极分部在所述调制器上方，所述调制器通过所述两个电源之外的另一个电源供电；所述另一个电隔离区分部在所述DFB与所述调制器之间，用于在所述DFB和所述调制器之间形成电隔离。
  7. 如权利要求6所述的抗反射激光器，其特征在于，所述高反射HR端面包括高反射膜层，所述高反射膜层镀在所述OFC的远离所述DFB的外侧面；所述抗反射AR端面 包括抗反射膜层，所述抗反射膜层镀在所述调制器的远离所述DFB的外侧面。
  8. 如权利要求6所述的抗反射激光器，其特征在于，所述调制器为电吸收调制器或马赫曾德尔调制器。
  9. 如权利要求6所述的抗反射激光器，其特征在于，所述两个电源包括两个直流电源，其中一个直流电源给OFC供电，另一个直流电源给DFB供电；所述另一个电源为高频信号电源，给所述调制器供电。
  10. 如权利要求1或6所述的抗反射激光器，其特征在于，所述电隔离区采用刻蚀或离子注入方式形成。
  11. 如权利要求1或6所述的抗反射激光器，其特征在于，所述光栅层包括如下光栅结构中的任意一种：均匀折射率光栅、相移光栅和增益耦合光栅结构。
  12. 一种光发射机，其特征在于，所述光发射机包括如权利要求1-11中任一权利要求所述的抗反射激光器和耦合器，其中；
    所述耦合器将所述光发射机输出的光通过光纤传输给远端的光接收机。
  13. 如权利要求12所述的光发射机，其特征在于，所述耦合器包括在所述抗反射激光器中的DFB和外部光纤之间引入的一个准直透镜和一个耦合透镜；或者，所述耦合器包括透镜光纤，所述光纤端面制作一个球透镜用来耦合；或者，所述耦合器包括在所述抗反射激光器中的DFB和外部光纤之间引入的一个准直透镜和两个耦合透镜。
  14. 如权利要求12所述的光发射机，其特征在于，所述耦合器包括波导耦合装置，所述波导耦合装置与所述抗反射激光器中的DFB对准耦合，所述波导耦合装置包括硅基波导或者InP基波导。
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