WO2020090636A1 - 化合物及びその製造方法並びにその化合物を用いた有機半導体材料 - Google Patents
化合物及びその製造方法並びにその化合物を用いた有機半導体材料 Download PDFInfo
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- WO2020090636A1 WO2020090636A1 PCT/JP2019/041840 JP2019041840W WO2020090636A1 WO 2020090636 A1 WO2020090636 A1 WO 2020090636A1 JP 2019041840 W JP2019041840 W JP 2019041840W WO 2020090636 A1 WO2020090636 A1 WO 2020090636A1
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 469
- 239000004065 semiconductor Substances 0.000 title claims abstract description 193
- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 claims description 95
- 125000000217 alkyl group Chemical group 0.000 claims description 65
- 125000005843 halogen group Chemical group 0.000 claims description 59
- 125000003118 aryl group Chemical group 0.000 claims description 56
- 239000003795 chemical substances by application Substances 0.000 claims description 51
- -1 boronic acid ester Chemical class 0.000 claims description 47
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 45
- 125000003545 alkoxy group Chemical group 0.000 claims description 43
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 41
- 125000000623 heterocyclic group Chemical group 0.000 claims description 30
- 125000003277 amino group Chemical group 0.000 claims description 25
- 125000002252 acyl group Chemical group 0.000 claims description 23
- 125000004442 acylamino group Chemical group 0.000 claims description 23
- 125000004665 trialkylsilyl group Chemical group 0.000 claims description 22
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 21
- 125000004423 acyloxy group Chemical group 0.000 claims description 20
- 125000004466 alkoxycarbonylamino group Chemical group 0.000 claims description 20
- 125000004414 alkyl thio group Chemical group 0.000 claims description 20
- 125000005162 aryl oxy carbonyl amino group Chemical group 0.000 claims description 20
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 claims description 20
- 125000005110 aryl thio group Chemical group 0.000 claims description 20
- 125000004104 aryloxy group Chemical group 0.000 claims description 20
- 230000002140 halogenating effect Effects 0.000 claims description 19
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 17
- 150000001639 boron compounds Chemical class 0.000 claims description 16
- PBIMIGNDTBRRPI-UHFFFAOYSA-N trifluoro borate Chemical compound FOB(OF)OF PBIMIGNDTBRRPI-UHFFFAOYSA-N 0.000 claims description 16
- 125000004457 alkyl amino carbonyl group Chemical group 0.000 claims description 14
- 125000005907 alkyl ester group Chemical group 0.000 claims description 14
- 125000005620 boronic acid group Chemical group 0.000 claims description 12
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 11
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 claims description 10
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 10
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 claims description 9
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000000304 alkynyl group Chemical group 0.000 claims description 9
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 claims description 9
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims description 9
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 claims description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 9
- 125000000000 cycloalkoxy group Chemical group 0.000 claims description 9
- 125000000717 hydrazino group Chemical group [H]N([*])N([H])[H] 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 9
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 9
- 125000000213 sulfino group Chemical group [H]OS(*)=O 0.000 claims description 9
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 claims description 9
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 9
- 125000006296 sulfonyl amino group Chemical group [H]N(*)S(*)(=O)=O 0.000 claims description 9
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 9
- 150000003606 tin compounds Chemical class 0.000 claims description 9
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 125000003368 amide group Chemical group 0.000 claims description 2
- DMSZORWOGDLWGN-UHFFFAOYSA-N ctk1a3526 Chemical group NP(N)(N)=O DMSZORWOGDLWGN-UHFFFAOYSA-N 0.000 claims 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 description 185
- 239000010410 layer Substances 0.000 description 137
- 239000010409 thin film Substances 0.000 description 87
- 239000010408 film Substances 0.000 description 84
- 239000002904 solvent Substances 0.000 description 76
- 239000002585 base Substances 0.000 description 67
- 239000000758 substrate Substances 0.000 description 64
- 239000000243 solution Substances 0.000 description 39
- 239000000203 mixture Substances 0.000 description 35
- 230000008569 process Effects 0.000 description 34
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 30
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 30
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 27
- 125000004432 carbon atom Chemical group C* 0.000 description 27
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 22
- 230000035484 reaction time Effects 0.000 description 22
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 21
- 229920000642 polymer Polymers 0.000 description 21
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 239000003054 catalyst Substances 0.000 description 17
- 239000011230 binding agent Substances 0.000 description 15
- 239000007787 solid Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 12
- 230000005669 field effect Effects 0.000 description 11
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 description 10
- LQZMLBORDGWNPD-UHFFFAOYSA-N N-iodosuccinimide Chemical compound IN1C(=O)CCC1=O LQZMLBORDGWNPD-UHFFFAOYSA-N 0.000 description 10
- 239000000654 additive Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 230000000704 physical effect Effects 0.000 description 10
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 10
- 0 *c1c(*)[s]c(C(C2=CN)=O)c1C2=O Chemical compound *c1c(*)[s]c(C(C2=CN)=O)c1C2=O 0.000 description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 9
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 9
- 238000005160 1H NMR spectroscopy Methods 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 8
- 229920000144 PEDOT:PSS Polymers 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 8
- 229910052794 bromium Inorganic materials 0.000 description 8
- 239000011630 iodine Substances 0.000 description 8
- 229910052740 iodine Inorganic materials 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 6
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 6
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoric acid amide group Chemical group P(N)(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000010898 silica gel chromatography Methods 0.000 description 6
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 125000001072 heteroaryl group Chemical group 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- PWATWSYOIIXYMA-UHFFFAOYSA-N Pentylbenzene Chemical compound CCCCCC1=CC=CC=C1 PWATWSYOIIXYMA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 150000001543 aryl boronic acids Chemical class 0.000 description 4
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 229940125782 compound 2 Drugs 0.000 description 4
- 229940126214 compound 3 Drugs 0.000 description 4
- 229940125898 compound 5 Drugs 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 description 4
- RMBAVIFYHOYIFM-UHFFFAOYSA-M sodium methanethiolate Chemical compound [Na+].[S-]C RMBAVIFYHOYIFM-UHFFFAOYSA-M 0.000 description 4
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 4
- VNFWTIYUKDMAOP-UHFFFAOYSA-N sphos Chemical compound COC1=CC=CC(OC)=C1C1=CC=CC=C1P(C1CCCCC1)C1CCCCC1 VNFWTIYUKDMAOP-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- PBKONEOXTCPAFI-UHFFFAOYSA-N 1,2,4-trichlorobenzene Chemical compound ClC1=CC=C(Cl)C(Cl)=C1 PBKONEOXTCPAFI-UHFFFAOYSA-N 0.000 description 3
- OSIGJGFTADMDOB-UHFFFAOYSA-N 1-Methoxy-3-methylbenzene Chemical compound COC1=CC=CC(C)=C1 OSIGJGFTADMDOB-UHFFFAOYSA-N 0.000 description 3
- CWLKTJOTWITYSI-UHFFFAOYSA-N 1-fluoronaphthalene Chemical compound C1=CC=C2C(F)=CC=CC2=C1 CWLKTJOTWITYSI-UHFFFAOYSA-N 0.000 description 3
- QYWWROMPJKBXEO-UHFFFAOYSA-N 2,3-diaminonaphthalene-1-carboxamide Chemical group NC=1C(=C(C2=CC=CC=C2C=1)C(=O)N)N QYWWROMPJKBXEO-UHFFFAOYSA-N 0.000 description 3
- KBVDUUXRXJTAJC-UHFFFAOYSA-N 2,5-dibromothiophene Chemical compound BrC1=CC=C(Br)S1 KBVDUUXRXJTAJC-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- DTFKRVXLBCAIOZ-UHFFFAOYSA-N 2-methylanisole Chemical compound COC1=CC=CC=C1C DTFKRVXLBCAIOZ-UHFFFAOYSA-N 0.000 description 3
- QUBJDMPBDURTJT-UHFFFAOYSA-N 3-chlorothiophene Chemical compound ClC=1C=CSC=1 QUBJDMPBDURTJT-UHFFFAOYSA-N 0.000 description 3
- 229940077398 4-methyl anisole Drugs 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- YFNONBGXNFCTMM-UHFFFAOYSA-N butoxybenzene Chemical compound CCCCOC1=CC=CC=C1 YFNONBGXNFCTMM-UHFFFAOYSA-N 0.000 description 3
- FFSAXUULYPJSKH-UHFFFAOYSA-N butyrophenone Chemical compound CCCC(=O)C1=CC=CC=C1 FFSAXUULYPJSKH-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229940125904 compound 1 Drugs 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- CFHGBZLNZZVTAY-UHFFFAOYSA-N lawesson's reagent Chemical compound C1=CC(OC)=CC=C1P1(=S)SP(=S)(C=2C=CC(OC)=CC=2)S1 CFHGBZLNZZVTAY-UHFFFAOYSA-N 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 238000000816 matrix-assisted laser desorption--ionisation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 238000007645 offset printing Methods 0.000 description 3
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 description 3
- DSNYFFJTZPIKFZ-UHFFFAOYSA-N propoxybenzene Chemical compound CCCOC1=CC=CC=C1 DSNYFFJTZPIKFZ-UHFFFAOYSA-N 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- QJDUDPQVDAASMV-UHFFFAOYSA-M sodium;ethanethiolate Chemical compound [Na+].CC[S-] QJDUDPQVDAASMV-UHFFFAOYSA-M 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 125000000547 substituted alkyl group Chemical group 0.000 description 3
- 150000004763 sulfides Chemical class 0.000 description 3
- 239000012756 surface treatment agent Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229920002725 thermoplastic elastomer Polymers 0.000 description 3
- FWSPXZXVNVQHIF-UHFFFAOYSA-N triethyl(ethynyl)silane Chemical group CC[Si](CC)(CC)C#C FWSPXZXVNVQHIF-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- CBMXCNPQDUJNHT-UHFFFAOYSA-N 1,6-dimethylnaphthalene Chemical compound CC1=CC=CC2=CC(C)=CC=C21 CBMXCNPQDUJNHT-UHFFFAOYSA-N 0.000 description 2
- HDNRAPAFJLXKBV-UHFFFAOYSA-N 1-ethyl-4-methoxybenzene Chemical compound CCC1=CC=C(OC)C=C1 HDNRAPAFJLXKBV-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- LZPWAYBEOJRFAX-UHFFFAOYSA-N 4,4,5,5-tetramethyl-1,3,2$l^{2}-dioxaborolane Chemical compound CC1(C)O[B]OC1(C)C LZPWAYBEOJRFAX-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- BTOJSYRZQZOMOK-UHFFFAOYSA-N 4-chloro-7-(4-methylphenyl)sulfonylpyrrolo[2,3-d]pyrimidine Chemical compound C1=CC(C)=CC=C1S(=O)(=O)N1C2=NC=NC(Cl)=C2C=C1 BTOJSYRZQZOMOK-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000022244 formylation Effects 0.000 description 2
- 238000006170 formylation reaction Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003251 poly(α-methylstyrene) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZYNMJJNWXVKJJV-UHFFFAOYSA-N propan-2-yloxybenzene Chemical compound CC(C)OC1=CC=CC=C1 ZYNMJJNWXVKJJV-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000010288 sodium nitrite Nutrition 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- REDSKZBUUUQMSK-UHFFFAOYSA-N tributyltin Chemical compound CCCC[Sn](CCCC)CCCC.CCCC[Sn](CCCC)CCCC REDSKZBUUUQMSK-UHFFFAOYSA-N 0.000 description 2
- CWMFRHBXRUITQE-UHFFFAOYSA-N trimethylsilylacetylene Chemical group C[Si](C)(C)C#C CWMFRHBXRUITQE-UHFFFAOYSA-N 0.000 description 2
- CCRMAATUKBYMPA-UHFFFAOYSA-N trimethyltin Chemical compound C[Sn](C)C.C[Sn](C)C CCRMAATUKBYMPA-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- ZMXIYERNXPIYFR-UHFFFAOYSA-N 1-ethylnaphthalene Chemical compound C1=CC=C2C(CC)=CC=CC2=C1 ZMXIYERNXPIYFR-UHFFFAOYSA-N 0.000 description 1
- BLMBNEVGYRXFNA-UHFFFAOYSA-N 1-methoxy-2,3-dimethylbenzene Chemical compound COC1=CC=CC(C)=C1C BLMBNEVGYRXFNA-UHFFFAOYSA-N 0.000 description 1
- JTPZTKBRUCILQD-UHFFFAOYSA-N 1-methylimidazolidin-2-one Chemical compound CN1CCNC1=O JTPZTKBRUCILQD-UHFFFAOYSA-N 0.000 description 1
- ATRJNSFQBYKFSM-UHFFFAOYSA-N 2,3-dibromothiophene Chemical compound BrC=1C=CSC=1Br ATRJNSFQBYKFSM-UHFFFAOYSA-N 0.000 description 1
- WAQFYSJKIRRXLP-UHFFFAOYSA-N 2,4-dibromothiophene Chemical compound BrC1=CSC(Br)=C1 WAQFYSJKIRRXLP-UHFFFAOYSA-N 0.000 description 1
- FGYBDASKYMSNCX-UHFFFAOYSA-N 2,5-dichlorothiophene Chemical compound ClC1=CC=C(Cl)S1 FGYBDASKYMSNCX-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- TUCRZHGAIRVWTI-UHFFFAOYSA-N 2-bromothiophene Chemical compound BrC1=CC=CS1 TUCRZHGAIRVWTI-UHFFFAOYSA-N 0.000 description 1
- GSFNQBFZFXUTBN-UHFFFAOYSA-N 2-chlorothiophene Chemical compound ClC1=CC=CS1 GSFNQBFZFXUTBN-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- VGKLVWTVCUDISO-UHFFFAOYSA-N 3,4-dibromothiophene Chemical compound BrC1=CSC=C1Br VGKLVWTVCUDISO-UHFFFAOYSA-N 0.000 description 1
- YNZQOVYRCBAMEU-UHFFFAOYSA-N 3,4-dichloro-1,2,5-thiadiazole Chemical compound ClC1=NSN=C1Cl YNZQOVYRCBAMEU-UHFFFAOYSA-N 0.000 description 1
- QVFXSOFIEKYPOE-UHFFFAOYSA-N 3,4-dichlorothiophene Chemical compound ClC1=CSC=C1Cl QVFXSOFIEKYPOE-UHFFFAOYSA-N 0.000 description 1
- XCMISAPCWHTVNG-UHFFFAOYSA-N 3-bromothiophene Chemical compound BrC=1C=CSC=1 XCMISAPCWHTVNG-UHFFFAOYSA-N 0.000 description 1
- KPOCSQCZXMATFR-UHFFFAOYSA-N 3-butylthiophene Chemical compound CCCCC=1C=CSC=1 KPOCSQCZXMATFR-UHFFFAOYSA-N 0.000 description 1
- UPCYEFFISUGBRW-UHFFFAOYSA-N 3-ethyl-2-sulfanylidene-1,3-thiazolidin-4-one Chemical compound CCN1C(=O)CSC1=S UPCYEFFISUGBRW-UHFFFAOYSA-N 0.000 description 1
- WDBQJSCPCGTAFG-QHCPKHFHSA-N 4,4-difluoro-N-[(1S)-3-[4-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)piperidin-1-yl]-1-pyridin-3-ylpropyl]cyclohexane-1-carboxamide Chemical compound FC1(CCC(CC1)C(=O)N[C@@H](CCN1CCC(CC1)N1C(=NN=C1C)C(C)C)C=1C=NC=CC=1)F WDBQJSCPCGTAFG-QHCPKHFHSA-N 0.000 description 1
- BWGRDBSNKQABCB-UHFFFAOYSA-N 4,4-difluoro-N-[3-[3-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)-8-azabicyclo[3.2.1]octan-8-yl]-1-thiophen-2-ylpropyl]cyclohexane-1-carboxamide Chemical compound CC(C)C1=NN=C(C)N1C1CC2CCC(C1)N2CCC(NC(=O)C1CCC(F)(F)CC1)C1=CC=CS1 BWGRDBSNKQABCB-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004057 DFT-B3LYP calculation Methods 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 101000578940 Homo sapiens PDZ domain-containing protein MAGIX Proteins 0.000 description 1
- YHBTXTFFTYXOFV-UHFFFAOYSA-N Liquid thiophthene Chemical compound C1=CSC2=C1C=CS2 YHBTXTFFTYXOFV-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- NUGPIZCTELGDOS-QHCPKHFHSA-N N-[(1S)-3-[4-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)piperidin-1-yl]-1-pyridin-3-ylpropyl]cyclopentanecarboxamide Chemical compound C(C)(C)C1=NN=C(N1C1CCN(CC1)CC[C@@H](C=1C=NC=CC=1)NC(=O)C1CCCC1)C NUGPIZCTELGDOS-QHCPKHFHSA-N 0.000 description 1
- LFZAGIJXANFPFN-UHFFFAOYSA-N N-[3-[4-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)piperidin-1-yl]-1-thiophen-2-ylpropyl]acetamide Chemical compound C(C)(C)C1=NN=C(N1C1CCN(CC1)CCC(C=1SC=CC=1)NC(C)=O)C LFZAGIJXANFPFN-UHFFFAOYSA-N 0.000 description 1
- QJYZXJRUIDJTTM-UHFFFAOYSA-N OP(O)(O)=O.COP(OC)OC Chemical compound OP(O)(O)=O.COP(OC)OC QJYZXJRUIDJTTM-UHFFFAOYSA-N 0.000 description 1
- 102100028326 PDZ domain-containing protein MAGIX Human genes 0.000 description 1
- 229920006169 Perfluoroelastomer Polymers 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- IPBVNPXQWQGGJP-UHFFFAOYSA-N acetic acid phenyl ester Natural products CC(=O)OC1=CC=CC=C1 IPBVNPXQWQGGJP-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- BNBQRQQYDMDJAH-UHFFFAOYSA-N benzodioxan Chemical compound C1=CC=C2OCCOC2=C1 BNBQRQQYDMDJAH-UHFFFAOYSA-N 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- HIHIPCDUFKZOSL-UHFFFAOYSA-N ethenyl(methyl)silicon Chemical compound C[Si]C=C HIHIPCDUFKZOSL-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 229920006229 ethylene acrylic elastomer Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229920002681 hypalon Polymers 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GKFRVXOKPXCXAK-UHFFFAOYSA-N octylboronic acid Chemical compound CCCCCCCCB(O)O GKFRVXOKPXCXAK-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229940049953 phenylacetate Drugs 0.000 description 1
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002382 photo conductive polymer Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 125000005415 substituted alkoxy group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000001269 time-of-flight mass spectrometry Methods 0.000 description 1
- 125000004954 trialkylamino group Chemical group 0.000 description 1
- XDMHGFCQJCEXKD-UHFFFAOYSA-N tributyl-[4-(2-ethylhexyl)thiophen-2-yl]stannane Chemical compound CCCCC(CC)CC1=CSC([Sn](CCCC)(CCCC)CCCC)=C1 XDMHGFCQJCEXKD-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
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Definitions
- the present invention relates to a compound having semiconductor characteristics, a method for producing the same, an intermediate compound, a method for producing the compound, an organic semiconductor material and an organic semiconductor device using the compound.
- NTz naphthobisthiadiazole
- Various materials can be developed by linking the ⁇ skeleton such as an aromatic ring or a heteroaromatic ring to the 3- or 7-position of the NTz skeleton to expand the conjugate, and the NTz skeleton is linked by a single bond to form an oligomer or polymer. It has been reported that the compound incorporated in the conjugated system is used for an n-type semiconductor, a p-type semiconductor, and an amphoteric semiconductor (for example, Patent Document 1 and Non-Patent Document 1).
- An aspect of the present invention is to provide a compound having excellent semiconductor properties, a method for producing the same, an intermediate compound and a method for producing the compound, and an organic semiconductor material and an organic semiconductor device using the compound.
- the present inventors have earnestly studied the introduction of a condensed ring structure that improves planarity and acceptor property in a compound containing an NTz skeleton in its molecular structure.
- a condensed ring structure that improves planarity and acceptor property in a compound containing an NTz skeleton in its molecular structure.
- the compound according to the first aspect of the present invention is characterized by being represented by the general formula (1).
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, An alkoxy group optionally substituted with Z, an alkylthio group optionally substituted with Z, an alkoxycarbonyl group optionally substituted with Z, an alkylcarbonyl group optionally substituted with Z, or with Z An aryl group which may be substituted; Q 1 and Q 2 are independently of each other a hydrogen atom, a halogen atom, an aryl group optionally substituted with Z, a heterocyclic group optionally substituted with Z, a formyl group, a boronic acid group, a boronic acid ester.
- X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- M 1 is a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, a cyano group, or an alkoxy group optionally substituted with Z;
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted by Z, an alkoxy group optionally substituted by Z, an alkyl ester group optionally substituted by Z.
- the compound which may be bonded to each other to form a ring is also one of the compounds according to the first aspect of the present invention.
- the compound according to the second aspect of the present invention is characterized by being represented by the general formula (2).
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, An alkoxy group which may be substituted with Z, an alkylthio group which may be substituted with Z, an alkoxycarbonyl group which may be substituted with Z, an alkylcarbonyl group which may be substituted with Z, or Z is An aryl group which may be substituted; J 1 and J 2 are, independently of each other, a skeleton that imparts an electron donating property or an electron accepting property; X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- M 1 is a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, a cyano group, or an alkoxy group optionally substituted with Z;
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted by Z, an alkoxy group optionally substituted by Z, an alkyl ester group optionally substituted by Z.
- the compound which may be bonded to each other to form a ring is also one of the compounds according to the second aspect of the present invention.
- a compound according to one embodiment of the present invention has a 5-membered heteroaromatic ring condensed on both sides of a naphthalene ring, has excellent planarity, and has an ⁇ -position of a thiophene ring or a thiazole ring, and thus is easily conjugated. It can be expanded, the acceptor property is improved, the photoelectric conversion efficiency and the charge mobility are improved, and excellent semiconductor characteristics are provided.
- an organic semiconductor material including the compound according to one embodiment of the present invention has high photoelectric conversion efficiency and charge mobility and excellent semiconductor characteristics; therefore, a photoelectric conversion element, an organic thin film transistor (a field effect transistor, or the like), light emission, It is used for various semiconductor devices such as devices.
- the compound according to one embodiment of the present invention can be used to easily produce compounds having various semiconductor properties.
- a compound having excellent semiconductor properties it is possible to provide a compound having excellent semiconductor properties, a method for producing the same, an intermediate compound, a method for producing the compound, an organic semiconductor material using the compound, and an organic semiconductor device. It has the effect of being able to.
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, An alkoxy group optionally substituted with Z, an alkylthio group optionally substituted with Z, an alkoxycarbonyl group optionally substituted with Z, an alkylcarbonyl group optionally substituted with Z, or with Z An aryl group which may be substituted; Q 1 and Q 2 are independently of each other a hydrogen atom, a halogen atom, an aryl group optionally substituted with Z, a heterocyclic group optionally substituted with Z, a formyl group, a boronic acid group, a boronic acid ester.
- X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- halogen atom examples include fluorine, chlorine, bromine and iodine (hereinafter, "halogen atom" in the present specification means at least one selected from fluorine, chlorine, bromine and iodine unless otherwise specified). ..
- the alkyl group preferably has 1 to 30 carbon atoms, more preferably 6 to 30 carbon atoms, and may be linear or branched.
- the alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 12 carbon atoms, and may be linear or branched.
- the alkyl ester group preferably has 2 to 30 carbon atoms, more preferably 2 to 12 carbon atoms, and may be linear or branched.
- the alkoxycarbonyl group preferably has 2 to 30 carbon atoms, more preferably 2 to 12 carbon atoms, and may be linear or branched.
- the alkylaminocarbonyl group preferably has 2 to 40 carbon atoms, more preferably 2 to 12 carbon atoms, and may be linear or branched.
- the acyl group preferably has 2 to 30 carbon atoms, more preferably 2 to 12 carbon atoms, and may be linear or branched.
- Examples of the amino group which may be substituted with Z and Z is an alkyl group include a monoalkylamino group, a dialkylamino group and a trialkylamino group in addition to the amino group.
- the alkyl group as a substituent for substituting the amino group preferably has 1 to 30 carbon atoms, more preferably 1 to 12 carbon atoms, and may be linear or branched.
- the acylamino group preferably has 2 to 30 carbon atoms, more preferably 2 to 12 carbon atoms, and may be linear or branched.
- the number of carbon atoms of the substituent having another alkyl moiety is preferably 1 to 30, more preferably 6 to 30, and these alkyl moieties may be linear or branched.
- the aryl group or the aryl moiety in each substituent preferably has 6 to 30 carbon atoms, more preferably 6 to 12 carbon atoms, and particularly preferably a phenyl group.
- the cycloalkyl group or the cycloalkyl moiety in each substituent preferably has 3 to 40 carbon atoms, and more preferably 4 to 20 carbon atoms.
- the heterocyclic group preferably has 3 to 30 carbon atoms, more preferably 3 to 12 carbon atoms, and particularly preferably a thienyl group.
- the compound represented by the general formula (1) (intermediate compound) (hereinafter referred to as “compound (1)”) is rigid and has high planarity. Therefore, the compound represented by the general formula (2) described later, which is synthesized using this compound as an intermediate compound, has rigidity and high planarity, and is applied as an organic semiconductor material to produce the organic semiconductor material.
- the organic semiconductor layer semiconductor active layer
- the intermolecular distance in the organic semiconductor layer becomes short, and high charge mobility can be exhibited.
- the compound (1) has the ⁇ -position of the thiophene ring or the thiazole ring, it is possible to easily expand the conjugate.
- a derivative thereof, that is, in the general formula (1), Q 1 or Q 2 is a hydrogen atom, a halogen atom, an aryl group optionally substituted with Z, a heterocyclic group optionally substituted with Z, Formyl group, boronic acid group, boronic acid ester group, boronic acid diaminonaphthaleneamide group, boronic acid N-methyliminodiacetic acid ester group, trifluoroborate base, triolborate base, trialkylsilyl group, or trialkylstannyl group
- a compound is easily expanded to a compound represented by the general formula (2) by conjugation expansion as described below.
- a compound according to one embodiment of the present invention has a skeleton represented by the general formula (2) in its structure, and imparts an electron donating property (donor property) or an electron accepting property (acceptor property) to the above compound (1). It has a structure in which a skeleton is introduced. Alternatively, it may have a skeleton represented by the compound (1) as a repeating unit.
- a 1 , A 2 , X 1 and X 2 are as described above; J 1 and J 2 are, independently of each other, a skeleton that imparts an electron donating property or an electron accepting property, and a known skeleton can be appropriately imparted.
- compound (2) the compound represented by the general formula (2) (hereinafter referred to as “compound (2)”), the compound represented by the general formula (2-1) is preferable.
- a 1 , A 2 , X 1 and X 2 are as described above; D 1 , D 2 , G 1 and G 2 independently of each other are CM 1 or N and M 1 is as described above; m and n are, independently of each other, 0 or a natural number; T 1 and T 2 independently of each other represent a cyclic functional group containing an alkenylene group.
- a functional group having the structure shown below is preferable.
- R 1 to R 9 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, or an aryl group.
- the alkyl group in R 1 to R 9 , the alkoxy group, the alkoxycarbonyl group, or the alkyl moiety in the alkylcarbonyl group may be linear or branched, and preferably has 6 to 30 carbon atoms. , 8 to 24 is more preferable.
- As the aryl group a phenyl group, a naphthyl group, an adamantyl group and the like are preferable.
- "*" in the structure represented below represents a bond.
- the compound represented by the general formula (2-1) is more preferable.
- a 1 , A 2 , T 1 , T 2 , X 1 , X 2 , m and n are as described above; M 5 to M 8 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, or an aryl group).
- the alkyl group of M 5 to M 8 , the alkoxy group, the alkoxycarbonyl group, or the alkyl moiety in the alkylcarbonyl group may be linear or branched, and preferably has 6 to 30 carbon atoms. , 8 to 24 is more preferable.
- As the aryl group a phenyl group, a naphthyl group, an adamantyl group and the like are preferable.
- the method for producing the compound (1) (intermediate compound) described above is not particularly limited.
- a compound represented by the following general formula (A1) can be synthesized from a commercially available compound to produce a naphthobisthiadiazole having a condensed thiophene ring.
- a preferred process is described according to the following reaction scheme, and a more specific example will be described in Examples below.
- steps B to G correspond to steps 1a to 6a when the compound (A1) is used.
- a compound represented by the general formula (A2) (hereinafter referred to as “compound (A2)”) is produced from the compound (A1) (step B).
- TAS represents a trialkylsilyl group.
- Step B is Step 1a, and specifically, is a step of reacting compound (A1) with trialkylsilylacetylene in the presence of a catalyst to form compound (A2).
- the trialkylsilylacetylene is not particularly limited as long as the reaction proceeds, and examples thereof include trimethylsilylacetylene and triethylsilylacetylene.
- Trialkylsilylacetylene can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A1).
- the catalyst include Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , Pd 2 (dba) 3 , CuI and the like.
- the reaction of Step B can usually be carried out in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (A1).
- the solvent is not particularly limited as long as the reaction proceeds. Further, a solvent having a function as a base, such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A2) is preferably purified before being subjected to the following step C.
- compound (A3) a compound represented by the general formula (A3) (hereinafter referred to as “compound (A3)”) is produced from the compound (A2) (step C).
- R 10 and R 11 independently of each other represent an optionally substituted alkyl group
- TAS represents a trialkylsilyl group.
- Step C is the step 2a, and specifically, for example, the step of reacting the compound (A2) with a sulfiding agent to produce the compound (A3).
- the sulfiding agent is not particularly limited as long as the reaction proceeds, and examples thereof include sulfide salts such as sodium thiomethoxide and sodium thioethoxide; Lawesson's reagent;
- the sulfiding agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A2).
- the reaction of step C can be usually performed in the presence of a solvent.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A3) is preferably purified before being subjected to the following Step D.
- compound (1-1a) a compound represented by the general formula (1-1a) (hereinafter referred to as “compound (1-1a)”) is produced from the compound (A3) (step D).
- compound (1-1a) Hal is as described above, and TAS represents a trialkylsilyl group.
- the compound (1-1a) is included in the compound (1) of the present invention.
- Step D is a step 3a, and specifically, a step of reacting the compound (A3) with a halogenating agent to produce the compound (1-1a).
- the halogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include N-bromosuccinimide; N-iodosuccinimide; halogens such as bromine and iodine; and halide salts thereof.
- the halogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A3).
- the reaction of step D can be usually performed in the presence of a solvent. Usually, the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C. The reaction time is usually 1 to 48 hours.
- the obtained compound (1-1a) may be purified. Further, the compound (1-1a) is preferably purified before being subjected to the following step E.
- a compound represented by the general formula (1-2a) (hereinafter referred to as “compound (1-2a)”) is produced from the compound (1-1a) (step E).
- M 1 is as described above, and the two M 1 may be the same as or different from each other.
- TAS represents a trialkylsilyl group.
- the compound (1-2a) is included in the compound (1) of the present invention.
- Step E is Step 4a, specifically, a step of reacting compound (1-1a) with a boron compound in the presence of a catalyst to produce compound (1-2a).
- the boron compound is not particularly limited as long as the reaction proceeds, and examples thereof include boronic acid, boronic acid ester, boronic acid diaminonaphthalene amide, boronic acid N-methyliminodiacetic acid ester, trifluoroborate base, and triolborate base. Is mentioned.
- the boron compound can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-1a).
- the reaction of Step E can be usually performed in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to compound (1-1a).
- the solvent is not particularly limited as long as the reaction proceeds. Further, a solvent having a function as a base, such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-2a) may be purified. Further, the compound (1-2a) is preferably purified before being subjected to the following Step F.
- a compound represented by the general formula (1-3a) (hereinafter referred to as “compound (1-3a)”) is produced from the compound (1-2a) (step F).
- compound (1-3a) M 1 is as described above, and Q 1a and Q 2a each independently represent a halogen atom.
- the compound (1-3a) is included in the compound (1) of the present invention.
- Step F is Step 5a, and specifically, for example, it is a step of reacting compound (1-2a) with a halogenating agent to produce compound (1-3a).
- the halogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include N-bromosuccinimide; N-iodosuccinimide; halogens such as bromine and iodine; and halide salts thereof.
- the halogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-2a).
- the reaction of step F can be usually performed in the presence of a solvent.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the resulting compound (1-3a) may be purified. Further, the compound (1-3a) is preferably purified before being subjected to the following step G.
- a compound represented by the general formula (1-4a) (hereinafter referred to as “compound (1-4a)”) is produced from the compound (1-3a) (step G).
- M 1 is as described above, and Q 1b and Q 2b are independently of each other a hydrogen atom, an aryl group, a heterocyclic group, a boronic acid group, a boronic acid ester group, a boronic acid.
- the compound (1-4a) is included in the compound (1) of the present invention.
- Step G is Step 6a, and specifically, is a step of reacting compound (1-3a) with a boron compound or a tin compound in the presence of a catalyst to produce compound (1-4a).
- the boron compound is not particularly limited as long as the reaction proceeds, and examples thereof include hydroboron compounds such as pinacolborane, diborane compounds such as bis (pinacolato) diborone, arylboronic acid, arylboronic acid ester, and arylboronic acid diaminonaphthalene.
- arylboronic acid N-methyliminodiacetic acid ester aryltrifluoroborate base
- heteroarylboronic acid heteroarylboronic acid ester
- heteroarylboronic acid diaminonaphthaleneamide heteroarylboronic acid N-methyliminodiacetic acid ester
- heteroaryl examples thereof include trifluoroborate base, triol borate base and the like.
- the tin compound is not particularly limited as long as the reaction proceeds, and examples thereof include ditin compounds such as bis (trimethyltin) and bis (tributyltin), trialkylaryltin, trialkylheteroaryltin, and the like.
- the boron compound and the tin compound can be used each independently, preferably in a ratio of 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-3a).
- the catalyst include Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , Pd 2 (dba) 3 , CuI and the like.
- the reaction of Step G can usually be carried out in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (1-3a).
- the solvent is not particularly limited as long as the reaction proceeds.
- a solvent having a function as a base such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-4a) may be purified.
- the production method of the compound (1) is not limited to the production method 1 described above.
- the compound represented by the general formula (A1) can be synthesized by the above step A to produce a naphthobisthiadiazole having a condensed thiophene ring. The preferable steps will be described along the following reaction scheme.
- the step H is a step of reacting the compound (A1) with a reducing agent to generate the compound (A4), for example.
- the reducing agent is not particularly limited as long as the reaction proceeds, and examples thereof include sodium borohydride, lithium aluminum hydride and the like.
- the reducing agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A1).
- the solvent is not particularly limited as long as the reaction proceeds.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A4) is preferably purified before being subjected to the following Step I.
- a compound represented by the general formula (A5) (hereinafter referred to as "compound (A5)”) is produced from the compound (A4) (step I).
- compound (A5) Hal is as described above, and —X 1 — and —X 2 — are independently of each other —O—, —S—, —Se—, —NM 2 —, or —CM. 3 represents CM 4 ⁇ .
- M 2 , M 3 and M 4 are, independently of each other, a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, and substituted with Z.
- the step I is, for example, a step of reacting the compound (A4) with a chalcogenizing agent, a nitrogenating agent, or a 1,2-diketone to generate the compound (A5).
- the chalcogenizing agent is not particularly limited as long as the reaction proceeds, and examples thereof include hydrogen peroxide, thionyl chloride, selenide chloride and the like.
- the chalcogenizing agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A4).
- the nitrogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include sodium nitrite.
- the nitrogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A4).
- the 1,2-diketone is not particularly limited as long as the reaction proceeds, and examples thereof include acetyl, benzyl, oxalyl chloride, oxalyl bromide and the like.
- the 1,2-diketone can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A4).
- a base can be appropriately used.
- the base is not particularly limited as long as the above reaction proceeds.
- the solvent is not particularly limited as long as the above reaction proceeds.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A5) is preferably purified before being subjected to the following Step J.
- steps J to O are steps 1a to 6a when the compound (A5) is used, and correspond to the above steps B to G when the compound (A1) is used.
- compound (A6) a compound represented by the general formula (A6) (hereinafter referred to as "compound (A6)") is produced from the compound (A5) (step J).
- TAS represents a trialkylsilyl group.
- Step J is Step 1a, and specifically, is a step of reacting compound (A5) with trialkylsilylacetylene in the presence of a catalyst to form compound (A6).
- the trialkylsilylacetylene is not particularly limited as long as the reaction proceeds, and examples thereof include trimethylsilylacetylene and triethylsilylacetylene.
- Trialkylsilylacetylene can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A5).
- the catalyst include Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , Pd 2 (dba) 3 , CuI and the like.
- the reaction of Step J can be usually performed in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (A5).
- the solvent is not particularly limited as long as the reaction proceeds. Further, a solvent having a function as a base, such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A6) is preferably purified before being subjected to the following step K.
- compound (A7) a compound represented by the general formula (A7) (hereinafter referred to as “compound (A7)”) is produced from the compound (A6) (step K).
- R 10 and R 11 each independently represent an optionally substituted alkyl group
- TAS represents a trialkylsilyl group.
- Step K is the step 2a, and specifically, for example, the step of reacting the compound (A6) with a sulfiding agent to produce the compound (A7).
- the sulfiding agent is not particularly limited as long as the reaction proceeds, and examples thereof include sulfide salts such as sodium thiomethoxide and sodium thioethoxide; Lawesson's reagent;
- the sulfurizing agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A6).
- the reaction of step K can be usually performed in the presence of a solvent. Usually, the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A7) is preferably purified before being subjected to the following step L.
- a compound represented by the general formula (1-1) (hereinafter referred to as “compound (1-1)”) is produced from the compound (A7) (step L).
- compound (1-1) a compound represented by the general formula (1-1)
- Hal is as described above
- TAS represents a trialkylsilyl group.
- the compound (1-1) is included in the compound (1) of the present invention.
- Step L is a step 3a, and specifically, a step of reacting the compound (A7) with a halogenating agent to produce the compound (1-1).
- the halogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include N-bromosuccinimide; N-iodosuccinimide; halogens such as bromine and iodine; and halide salts thereof.
- the halogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A7).
- the reaction of step L can usually be carried out in the presence of a solvent. Usually, the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C. The reaction time is usually 1 to 48 hours.
- the obtained compound (1-1) may be purified. Further, the compound (1-1) is preferably purified before being subjected to the following step M.
- a compound represented by the general formula (1-2) (hereinafter referred to as “compound (1-2)”) is produced from the compound (1-1) (step M).
- M 1 is as described above, and the two M 1 may be the same as or different from each other.
- TAS represents a trialkylsilyl group.
- the compound (1-2) is included in the compound (1) of the present invention.
- Step M is Step 4a, and specifically, is a step of reacting compound (1-1) with a boron compound in the presence of a catalyst to produce compound (1-2).
- the boron compound is not particularly limited as long as the reaction proceeds, and examples thereof include boronic acid, boronic acid ester, boronic acid diaminonaphthaleneamide, boronic acid N-methyliminodiacetic acid ester, trifluoroborate base, or triolborate base.
- the boron compound can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-1).
- the reaction of Step M can usually be carried out in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (1-1).
- the solvent is not particularly limited as long as the reaction proceeds.
- a solvent having a function as a base such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-2) may be purified. Further, the compound (1-2) is preferably purified before being subjected to the following Step N.
- a compound represented by the general formula (1-3) (hereinafter referred to as “compound (1-3)”) is produced from the compound (1-2) (step N).
- M 1 is as described above, and Q 1a and Q 2a each independently represent a halogen atom.
- the compound (1-3) is included in the compound (1) of the present invention.
- Step N is the step 5a, and specifically, for example, the step of reacting compound (1-2) with a halogenating agent to produce compound (1-3).
- the halogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include N-bromosuccinimide; N-iodosuccinimide; halogens such as bromine and iodine; and halide salts thereof.
- the halogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-2).
- the reaction of Step N can be usually performed in the presence of a solvent.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-3) may be purified. Further, the compound (1-3) is preferably purified before being subjected to the following step O.
- a compound represented by the general formula (1-4) (hereinafter referred to as “compound (1-4)”) is produced from the compound (1-3) (step O).
- compound (1-4) a compound represented by the general formula (1-4) (hereinafter referred to as “compound (1-4)”) is produced from the compound (1-3) (step O).
- M 1 is as described above, and Q 1b and Q 2b are independently of each other a hydrogen atom, an aryl group which may be substituted by Z, or a substituent which may be substituted by Z.
- Step Oa is Step 6a, and specifically, for example, compound (1-3) is reacted with a boron compound or a tin compound in the presence of a catalyst to form compound (1-4). It is a process.
- the boron compound is not particularly limited as long as the reaction proceeds, and examples thereof include hydroboron compounds such as pinacolborane, diborane compounds such as bis (pinacolato) diborone, arylboronic acid, arylboronic acid ester, and arylboronic acid diaminonaphthalene.
- arylboronic acid N-methyliminodiacetic acid ester aryltrifluoroborate base
- heteroarylboronic acid heteroarylboronic acid ester
- heteroarylboronic acid diaminonaphthaleneamide heteroarylboronic acid N-methyliminodiacetic acid ester
- heteroaryl examples thereof include trifluoroborate base, triol borate base and the like.
- the tin compound is not particularly limited as long as the reaction proceeds, and examples thereof include ditin compounds such as bis (trimethyltin) and bis (tributyltin), trialkylaryltin, trialkylheteroaryltin, and the like.
- the boron compound and the tin compound can be used each independently, preferably in a ratio of 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (1-3).
- the catalyst include Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , Pd 2 (dba) 3 , CuI and the like.
- the reaction of Step O can be usually performed in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (1-3).
- the solvent is not particularly limited as long as the reaction proceeds.
- a solvent having a function as a base such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-4) may be purified.
- step Ob the compound (1-4) is subjected to formylation to produce a compound represented by the general formula (1-5) (hereinafter referred to as “compound (1-5)”) (step Ob).
- compound (1-5) a compound represented by the general formula (1-5)
- M 1 is as described above, and Q 1c and Q 2c each independently represent a formyl group.
- the compound (1-5) is included in the compound (1) of the present invention.
- formylation is carried out by a conventional method.
- the production method of the compound (1) is not limited to the production methods 1 and 2 described above.
- a compound represented by the following formula (A8) can be synthesized from a commercially available compound to produce a naphthobisthiadiazole having a thiazole ring condensed. The preferable steps will be described along the following reaction scheme.
- a compound represented by the general formula (A9) (hereinafter referred to as “compound (A9)”) is produced from the compound (A8) (step Q).
- compound (A9) —X 1 — and —X 2 — independently represent —O—, —S—, —Se—, —NM 2 —, or —CM 3 ⁇ CM 4 —.
- M 2 , M 3 and M 4 are, independently of each other, a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, and substituted with Z.
- the step Q is, for example, a step of reacting the compound (A8) with a chalcogenizing agent, a nitrogenating agent or a 1,2-diketone to produce a compound (A9).
- the chalcogenizing agent is not particularly limited as long as the reaction proceeds, and examples thereof include hydrogen peroxide, thionyl chloride, selenide chloride and the like.
- the chalcogenizing agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A8).
- the nitrogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include sodium nitrite.
- the nitrogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A8).
- the 1,2-diketone is not particularly limited as long as the reaction proceeds, and examples thereof include acetyl, benzyl, oxalyl chloride, oxalyl bromide and the like.
- the 1,2-diketone can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A8).
- a base can be appropriately used.
- the base is not particularly limited as long as the above reaction proceeds.
- the solvent is not particularly limited as long as the above reaction proceeds.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A9) is preferably purified before being subjected to the following step R.
- steps R to U correspond to steps 1b to 4b when the compound (A9) is used.
- compound (A10) a compound represented by the general formula (A10) (hereinafter referred to as “compound (A10)”) is produced from the compound (A9) (step R).
- Step R is Step 1b, and specifically, for example, a step of reacting compound (A9) with a halogenating agent to produce compound (A10).
- the halogenating agent is not particularly limited as long as the reaction proceeds, and examples thereof include N-bromosuccinimide; N-iodosuccinimide; halogens such as bromine and iodine; and halide salts thereof.
- the halogenating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A9).
- the solvent is not particularly limited as long as the reaction proceeds. Usually, the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A10) is preferably purified before being subjected to the following step S.
- compound (A11) a compound represented by the general formula (hereinafter, referred to as “compound (A11)”) is produced from the compound (A10) (step S).
- Step S is a step 2b, specifically, a step of reacting the compound (A10) with an aminating agent to produce the compound (A11).
- the aminating agent is not particularly limited as long as the reaction proceeds, and examples thereof include aqueous ammonia solution and liquid ammonia.
- the aminating agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A10).
- the solvent is not particularly limited as long as the reaction proceeds.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A11) is preferably purified before being subjected to the following step T.
- Q 1 and Q 2 are independently of each other a hydrogen atom, a halogen atom, an aryl group, a heterocyclic group, a boronic acid group, a boronic acid. It represents an ester group, a boronic acid diaminonaphthaleneamide group, a boronic acid N-methyliminodiacetic acid ester group, a trifluoroborate base, a triolborate base, a trialkylsilyl group, or a trialkylstannyl group.
- Compound (ii) and compound (iii) can be synthesized using a commercially available carboxylic acid with reference to, for example, literature: Synthesis 2003, 18, 2795-2798.
- Step T is step 3b, and specifically, is a step of reacting compound (A11) with compound (ii) and compound (iii) to produce compound (A12).
- Compound (ii) and compound (iii) can be used each independently, preferably in a ratio of 1 to 20 equivalents, more preferably 1 to 10 equivalents, relative to 1 equivalent of compound (A11).
- the reaction of Step T can usually be carried out in the presence of a base and a solvent.
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (A11).
- the solvent is not particularly limited as long as the reaction proceeds.
- a solvent which also has a function as a base such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A12) is preferably purified before being subjected to the following step U.
- compound (1-6) a compound represented by the general formula (1-6) (hereinafter referred to as “compound (1-6)”) is produced from the compound (A12) (step U).
- the compound (1-6) is included in the compound (1) of the present invention.
- Step U is Step 4b, and specifically, for example, a step of reacting compound (A12) with a sulfiding agent to produce compound (1-6).
- the sulfiding agent is not particularly limited as long as the reaction proceeds, and examples thereof include sulfide salts such as sodium thiomethoxide and sodium thioethoxide; Lawesson's reagent;
- the sulfiding agent can be used in a ratio of preferably 2 to 20 equivalents, more preferably 2 to 10 equivalents, relative to 1 equivalent of the compound (A12).
- the reaction of step U can be usually performed in the presence of a solvent.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (1-6) may be purified.
- the method for producing the compound (2) described above is not particularly limited.
- the compound (2) is prepared by carrying out a step of introducing J 1 and J 2 which are skeletons imparting an electron donating property or an electron accepting property as Q 1 and Q 2 of the above-mentioned compound (1) by a usual method. Can be manufactured. The preferable steps will be described along the following reaction scheme.
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, or Z.
- M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, or Z.
- An optionally substituted aryl group; Q 1 and Q 2 are independently of each other a hydrogen atom, a halogen atom, an aryl group optionally substituted with Z, a heterocyclic group optionally substituted with Z, a formyl group, a boronic acid group, a boronic acid ester.
- X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- the compound (iv) and the compound (v) can be synthesized from a commercially available thiophene and a tin compound.
- D 1 and G 1 in the compound (iv) and D 2 and G 2 in the compound (v) are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom or Z. It is an optionally substituted alkyl group, a cyano group, or an optionally substituted alkoxy group. Z is as described above.
- alkyl represents an alkyl group.
- the alkyl group may be linear or branched, and the number of carbon atoms thereof is preferably 1-30, more preferably 1-12, methyl, ethyl, propyl, butyl, or It is more preferably pentyl.
- m and n are 0 or a natural number independently of each other.
- Step V is, for example, a step of reacting compound (1) with compound (iv) and compound (v) in the presence of a catalyst to form compound (A13).
- the compound (iv) and the compound (v) can be used each independently, preferably in a ratio of 1 to 20 equivalents, more preferably 1 to 10 equivalents, relative to 1 equivalent of the compound (1).
- the catalyst include Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , Pd 2 (dba) 3 , CuI and the like.
- the solvent is not particularly limited as long as the reaction proceeds.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A13) is preferably purified before being subjected to the following step W.
- a compound represented by the general formula (A14) (hereinafter, referred to as “compound (A14)”) is produced from the compound (A13) (step W).
- D 1 , D 2 , G 1 and G 2 in the compound (A14) are as described above.
- m and n are as described above.
- Step W is, for example, a step of reacting compound (A13) with N, N-dimethylformamide and phosphoryl chloride to produce compound (A14).
- N, N-dimethylformamide and phosphoryl chloride can be used each independently, preferably in a ratio of 1 to 100 equivalents, more preferably 1 to 50 equivalents, relative to 1 equivalent of the compound (A13).
- the reaction of step W can be usually performed in the presence of a solvent.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the compound (A14) is preferably purified before being subjected to the following Step X.
- the step X is, for example, a step of reacting the compound (A14) with the compound (vi) and the compound (vii) in the presence of a base to produce the compound (2-1).
- the compound (vi) and the compound (vii) can be used each independently, preferably in a ratio of 1 to 20 equivalents, more preferably 1 to 10 equivalents, relative to 1 equivalent of the compound (A14).
- the base is not particularly limited as long as the reaction can proceed.
- the base can be used in a ratio of preferably 1 to 40 equivalents, more preferably 1 to 20 equivalents, relative to 1 equivalent of the compound (A14).
- the solvent is not particularly limited as long as the reaction proceeds.
- a solvent which also has a function as a base such as triethylamine or piperidine, may be used.
- the reaction temperature is preferably 0 to 200 ° C, more preferably 0 to 120 ° C.
- the reaction time is usually 1 to 48 hours.
- the obtained compound (2-1) may be purified.
- compound (2-2) The compound (2-1), more preferably the compound represented by the following general formula (2-2) (hereinafter, referred to as “compound (2-2)”) can be manufactured by the above production method.
- a 1 , A 2 , T 1 , T 2 , X 1 , X 2 , m and n are as described above;
- M 5 to M 8 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, or an aryl group.
- Organic semiconductor material Since the organic semiconductor material according to one embodiment of the present invention containing the compound (2) has rigidity and high flatness as described above, the organic semiconductor material is formed into a film to form an organic semiconductor layer (semiconductor active layer). The inter-molecular distance in the organic semiconductor layer is shortened and high charge mobility can be exerted.
- the organic semiconductor material according to one embodiment of the present invention contains additives or additives for the purpose of improving physical properties such as film-forming properties of the organic semiconductor layer, or for doping. Other components such as other semiconductor materials may be added.
- an organic semiconductor film-forming composition is formed by adding additives and other components such as other semiconductor materials as necessary.
- Organic semiconductor material according to one aspect of the present invention described above can be an organic semiconductor device including the same. That is, it is possible to manufacture an organic semiconductor device including an organic semiconductor layer (semiconductor active layer) formed by using an organic semiconductor material on a substrate or the like.
- organic semiconductor device according to one aspect of the present invention include various devices such as a photoelectric conversion element having an organic semiconductor layer, an organic thin film transistor (field effect transistor), and a light emitting device.
- the method for producing the organic semiconductor layer in the organic semiconductor device is not particularly limited, and various conventionally known production methods can be used.
- the manufacturing method include a vapor deposition method, a coating method such as a spin coating method, an inkjet method, a screen printing method, an offset printing method, or a solution method such as a microcontact printing method.
- composition for forming organic semiconductor film contains the compound according to one embodiment of the present invention and is preferably used for forming an organic semiconductor film.
- the compound according to one aspect of the present invention is as described above, and only one kind may be used, or two or more kinds may be used in combination.
- the content of the compound in the composition for forming an organic semiconductor film is not particularly limited, and for example, when represented by the content in the solid content excluding the solvent described below, the content of the compound in the organic semiconductor film described below. It is preferably in the same range as the rate.
- the organic semiconductor film-forming composition may contain a binder polymer.
- Binder polymer When the composition for forming an organic semiconductor film contains a binder polymer, an organic semiconductor film having high film quality can be obtained.
- Such a binder polymer is not particularly limited, and examples thereof include polystyrene, poly ( ⁇ -methylstyrene), polycarbonate, polyarylate, polyester, polyamide, polyimide, polyurethane, polysiloxane, polysulfone, polymethylacrylate, polymethyl.
- Insulating polymers such as methacrylate, cellulose, polyethylene, or polypropylene, or copolymers thereof may be used.
- ethylene-propylene rubber acrylonitrile-butadiene rubber, hydrogenated nitrile rubber, fluororubber, perfluoroelastomer, tetrafluoroethylenepropylene copolymer, ethylene-propylene-diene copolymer, styrene -Butadiene rubber, polychloroprene, polyneoprene, butyl rubber, methylphenyl silicone resin, methylphenyl vinyl silicone resin, methyl vinyl silicone resin, fluorosilicone resin, acrylic rubber, ethylene acrylic rubber, chlorosulfonated polyethylene, chloropolyethylene, epichlorohydride Phosphorus copolymer, polyisoprene-natural rubber copolymer, polyisoprene rubber, styrene-isoprene block copolymer, polyester urethane copolymer, poly Chromatography ether urethane copolymers, polyether esterative, polyethylene-propylene
- binder polymer for example, a photoconductive polymer such as polyvinylcarbazole or polysilane, a conductive polymer such as polythiophene, polypyrrole, polyaniline or polyparaphenylene vinylene, or Chemistry Materials, 2014, 26, 647.
- a photoconductive polymer such as polyvinylcarbazole or polysilane
- a conductive polymer such as polythiophene, polypyrrole, polyaniline or polyparaphenylene vinylene, or Chemistry Materials, 2014, 26, 647.
- the binder polymer preferably has a structure containing no polar group.
- the polar group refers to a functional group having a hetero atom other than a carbon atom and a hydrogen atom.
- the binder polymer having a structure containing no polar group polystyrene or poly ( ⁇ -methylstyrene) is preferable among the above. Also, semiconducting polymers are preferred.
- the mass average molecular weight of the binder polymer is not particularly limited, but is preferably, for example, 1,000 to 10,000,000, more preferably 3,000 to 5,000,000, further preferably 5,000 to 3,000,000.
- the glass transition temperature of the binder polymer is not particularly limited, and is set appropriately according to the application. For example, when imparting strong mechanical strength to the organic semiconductor film, it is preferable to increase the glass transition temperature. On the other hand, when imparting flexibility to the organic semiconductor film, it is preferable to lower the glass transition temperature.
- the binder polymer may be used alone or in combination of two or more.
- the content of the binder polymer in the composition for forming an organic semiconductor film is not particularly limited, and, for example, when represented by the content in the solid content excluding the solvent described below, the content of the binder polymer in the organic semiconductor film described below. It is preferably in the same range as the content rate.
- carrier mobility and durability are further improved.
- the compound according to one aspect of the present invention may be uniformly mixed with the binder polymer, or part or all of which may be phase-separated. From the viewpoint of coating ease or coating uniformity, it is preferable that the above compound and the binder polymer are uniformly mixed at least during coating in the composition for forming an organic semiconductor film.
- the composition for forming an organic semiconductor film may contain a solvent.
- a solvent is not particularly limited as long as it is a solvent that dissolves or disperses the above-mentioned compound, and includes an inorganic solvent or an organic solvent. Of these, organic solvents are preferable. Only one type of solvent may be used, or two or more types may be used in combination.
- the organic solvent is not particularly limited, but for example, hexane, octane, decane, toluene, xylene, mesitylene, ethylbenzene, amylbenzene, decalin, 1-methylnaphthalene, 1-ethylnaphthalene, 1,6-dimethylnaphthalene, tetralin, etc.
- Hydrocarbon solvent acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, acetophenone, propiophenone, butyrophenone or other ketone solvent, dichloromethane, chloroform, tetrachloromethane, dichloroethane, trichloroethane, tetrachloroethane, chlorobenzene, 1,2-diene Halogenated hydrocarbon solvents such as chlorobenzene, 1,2,4-trichlorobenzene, chlorotoluene, or 1-fluoronaphthalene, pyridine, picoline, quinoline, Heterocyclic solvents such as offene, 3-butylthiophene, or thieno [2,3-b] thiophene, 2-chlorothiophene, 3-chlorothiophene, 2,5-dichlorothiophene, 3,4-dichlorothiophene
- hydrocarbon solvents ketone solvents, halogenated hydrocarbon solvents, heterocyclic solvents, halogenated heterocyclic solvents, or ether solvents are preferable, toluene, xylene, mesitylene, amylbenzene, tetralin, acetophenone, propiophenone, butyrophenone, Dichlorobenzene, anisole, ethoxybenzene, propoxybenzene, isopropoxybenzene, butoxybenzene, 2-methylanisole, 3-methylanisole, 4-methylanisole, 1-fluoronaphthalene, 3-chlorothiophene, or 2,5-dibromothiophene Is more preferable, toluene, xylene, tetralin, acetophenone, propiophenone, butyrophenone, anisole, ethoxybenzene, propoxybenzene, butoxybenzene, 2-methylanisole.
- 2-methylanisole 2-methylanisole
- the content of the solvent in the composition for forming an organic semiconductor film is preferably 90 to 99.95% by mass, more preferably 95 to 99.9% by mass, and 96 to 99.9% by mass. Is more preferable. Therefore, the content ratio of the solid content in the organic semiconductor film-forming composition is preferably 10 to 0.05% by mass, more preferably 5 to 0.1% by mass, and 4 to 0.1% by mass. More preferably, it is mass%.
- the composition for forming an organic semiconductor film may contain other components such as additives and other semiconductor materials, if necessary, in addition to the compound and the solvent according to one embodiment of the present invention. ..
- an additive that is usually used in an organic semiconductor film-forming composition can be used and is not particularly limited.
- the additive include a surfactant, an antioxidant, a crystallization control agent, a crystal orientation control agent, and the like.
- the surfactants and antioxidants include the surfactants and antioxidants described in paragraphs [0136] and [0137] of JP-A-2005-195362, and the description of the paragraph is as it is. It is preferably incorporated herein.
- the content of the additive in the composition for forming an organic semiconductor film is not particularly limited, and, for example, when expressed by the content in the solid content excluding the solvent, the content of the additive in the organic semiconductor film described below. It is preferably in the same range as.
- the organic semiconductor film of the organic thin film transistor is formed using the composition for forming an organic semiconductor film having the content of the additive in the above range, the film forming property is excellent, and the carrier mobility and heat resistance are further improved.
- the method for preparing the composition for forming an organic semiconductor film is not particularly limited, and a usual preparation method can be adopted.
- the composition for forming an organic semiconductor film can be prepared by appropriately mixing and treating a predetermined amount of each component using a mixer, a stirrer, or the like.
- each component can be heated during or after the mixing process.
- the heating temperature is not particularly limited, but is preferably in the range of 40 to 150 ° C., for example.
- a solvent is used, it is preferably heated at a temperature within the above heating temperature range and lower than the boiling point of the solvent.
- the organic semiconductor film contains the compound according to one embodiment of the present invention.
- the thickness of the organic semiconductor film is preferably 1 nm to 1000 nm, more preferably 2 nm to 1000 nm, further preferably 5 nm to 500 nm, particularly preferably 20 nm to 200 nm.
- the step of producing the organic semiconductor film may include the step of orienting the compound according to one embodiment of the present invention.
- the main chain portion or the side chain portion of the compound according to one embodiment of the present invention is aligned in one direction, so that electron mobility or hole mobility is further improved.
- a method for aligning the compound according to one embodiment of the present invention a method known as a liquid crystal alignment method can be used.
- a rubbing method, a photo-alignment method, a shearing method (shear stress applying method), or a pull-up coating method is simple and useful and therefore easy to use, and the rubbing method and the shearing method are more preferable.
- the organic semiconductor film Since the organic semiconductor film has an electron-transporting property or a hole-transporting property, an electron or hole injected from an electrode or a charge generated by absorbed light is transported and controlled, so that an organic thin film transistor, an organic photoelectric conversion element (organic photoelectric conversion element It can be used for organic semiconductor devices such as solar cells and optical sensors).
- organic semiconductor film it is more preferable to use the compound according to one embodiment of the present invention by orienting it by an alignment treatment in order to improve the electron transporting property or the hole transporting property.
- the organic semiconductor film is an organic semiconductor having an excellent electron transport property and operational stability, and can be suitably used particularly as a material for organic semiconductor devices such as organic thin film transistors, organic solar cells, and optical sensors.
- the method for producing the organic semiconductor film is not particularly limited as long as it is a method including the step of applying the above-described organic semiconductor film-forming composition onto a substrate.
- applying the composition for forming an organic semiconductor film onto a substrate means not only a mode in which the composition for forming an organic semiconductor film is directly applied onto the substrate, but also through another layer provided on the substrate.
- Mode in which the organic semiconductor film-forming composition is applied above the substrate (mode in which the organic semiconductor film-forming composition is applied in the state where another layer is present between the substrate and the organic semiconductor film-forming composition) Will also be included.
- the other layer (the layer that is in contact with the organic semiconductor film and serves as the base of the organic semiconductor film) is necessarily determined by the structure of the organic thin film transistor.
- the other layer is a gate insulating film, and when it is a top gate type (top gate-bottom contact type and top gate-top contact type), another layer is formed.
- the layer is a source electrode or a drain electrode.
- the substrate may be heated or cooled when forming the organic semiconductor film. By changing the temperature of the substrate, the film quality or the packing of the compound according to one embodiment of the present invention in the film can be controlled.
- the material of the substrate is not particularly limited as long as it does not impair the characteristics of the organic thin film transistor, for example.
- a glass substrate, a silicon substrate, a film substrate which may be flexible, and a plastic substrate can be used as the substrate.
- the temperature of the substrate is not particularly limited.
- the temperature is, for example, preferably set in the range of 0 to 200 ° C., more preferably set in the range of 15 to 100 ° C., and set in the range of 20 to 95 ° C. Particularly preferred.
- the method for forming the organic semiconductor film is not particularly limited, and includes a vacuum process or a solution process, and any method is preferable.
- the vacuum process include a physical vapor deposition method such as a vacuum vapor deposition method, a sputtering method, an ion plating method, or a molecular beam epitaxy (Molecular Beam Epitaxy: MBE) method, or a chemical vapor deposition method such as plasma polymerization ( Chemical Vapor Deposition (CVD) method can be mentioned.
- the vacuum vapor deposition method is preferable.
- the solution process it is preferable to use an organic semiconductor film-forming composition containing the above solvent.
- the compound according to one embodiment of the present invention is stable even in the atmosphere (in air). Therefore, the solution process can be performed in the atmosphere, and further, the organic semiconductor film-forming composition of the present invention can be applied in a large area.
- a method for applying the composition for forming an organic semiconductor film in the solution process a usual method can be used.
- the coating method for example, a drop casting method, a casting method, a dip coating method, a die coater method, a roll coater method, a bar coater method, or a spin coating method or the like coating method, an inkjet method, a screen printing method, a gravure printing method.
- the method include various printing methods such as a flexographic printing method, an offset printing method, a microcontact printing method, and a Langmuir-Blodgett (LB) method.
- the drop casting method, casting method, spin coating method, ink jet method, gravure printing method, flexographic printing method, offset printing method, or microcontact printing method is preferable.
- the organic semiconductor film-forming composition applied on the substrate is dried. More preferably, the drying is performed gradually.
- the composition for forming an organic semiconductor film is dried on the heated substrate by natural drying or heat drying and then vacuum drying.
- the temperature of the substrate during natural drying or heat drying is preferably 20 to 100 ° C, and more preferably 20 to 80 ° C.
- the natural drying or heat drying time is preferably 0.5 to 20 hours, more preferably 1 to 10 hours.
- the temperature during drying under reduced pressure is preferably 20 to 100 ° C, more preferably 20 to 80 ° C.
- the reduced pressure drying time is preferably 1 to 20 hours, and more preferably 2 to 10 hours.
- the pressure during drying under reduced pressure is preferably 10 ⁇ 6 to 10 ⁇ 2 Pa, and more preferably 10 ⁇ 5 to 10 ⁇ 3 Pa.
- the thus-dried composition for forming an organic semiconductor film can be molded into a predetermined shape or a predetermined pattern if necessary.
- organic thin film transistor also referred to as an organic TFT
- an organic thin film transistor also referred to as an organic TFT
- the organic thin film transistor includes the organic semiconductor film described above. Accordingly, the organic thin film transistor according to one embodiment of the present invention exhibits high carrier mobility, and moreover, even when placed in the atmosphere (in air), deterioration of characteristics over time can be effectively suppressed and stable driving can be performed.
- the ambient temperature and humidity in the atmosphere are not particularly limited as long as they are the temperature and humidity in the usage environment of the organic thin film transistor.
- the temperature is room temperature (25 ⁇ 15 ° C.) and the humidity is 10 to 10 90RH% is mentioned.
- the organic thin film transistor according to one aspect of the present invention is preferably used as a field effect transistor (FET), and more preferably used as an insulated gate FET in which a gate and a channel are insulated.
- FET field effect transistor
- the thickness of the organic thin film transistor according to an aspect of the present invention is not particularly limited, but when the transistor is thinner, the thickness of the entire transistor is preferably 0.1 to 0.5 ⁇ m, for example.
- the organic thin film transistor has an organic semiconductor film (also referred to as an organic semiconductor layer or a semiconductor active layer), and can further have a source electrode, a drain electrode, a gate electrode, and a gate insulating film.
- organic semiconductor film also referred to as an organic semiconductor layer or a semiconductor active layer
- An organic thin film transistor on a substrate, a gate electrode, an organic semiconductor film, a gate insulating film provided between the gate electrode and the organic semiconductor film, provided in contact with the organic semiconductor film, It has a source electrode and a drain electrode connected through an organic semiconductor film.
- the organic semiconductor film and the gate insulating film are provided adjacent to each other.
- the organic thin film transistor according to one aspect of the present invention is not particularly limited in its structure as long as it has the above-mentioned layers.
- the organic thin film transistor may have any structure such as bottom contact type (bottom gate-bottom contact type and top gate-bottom contact type) or top contact type (bottom gate-top contact type and top gate-top contact type). You may have.
- the organic thin film transistor according to one aspect of the present invention is more preferably a bottom gate-bottom contact type or a bottom gate-top contact type (these types are collectively referred to as a bottom gate type).
- FIG. 1 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a first embodiment of the present invention.
- the organic thin film transistor 100 includes a substrate 1, a source electrode 5 and a drain electrode 6 formed on the substrate 1 with a predetermined space, and a source electrode 5 and a drain electrode 6.
- the organic semiconductor layer 2 formed on the substrate 1, the insulating layer 3 formed on a part of the organic semiconductor layer 2, and the region of the insulating layer 3 between the source electrode 5 and the drain electrode 6 are covered.
- a gate electrode 4 formed on a part of the insulating layer 3.
- FIG. 2 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a second embodiment of the present invention.
- the organic thin film transistor 110 includes a substrate 1, a source electrode 5 formed on the substrate 1, an organic semiconductor layer 2 formed on the substrate 1 so as to cover the source electrode 5, and a source.
- a drain electrode 6 formed on the organic semiconductor layer 2 with a predetermined distance from the electrode 5, and an insulating layer 3 formed on a part of the organic semiconductor layer 2 so as to cover a part of the drain electrode 6.
- a gate electrode 4 formed on a part of the insulating layer 3 so as to cover a region of the insulating layer 3 between the source electrode 5 and the drain electrode 6.
- FIG. 3 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a third embodiment of the present invention.
- the organic thin film transistor 120 includes a substrate 1, an organic semiconductor layer 2 formed on the substrate 1, a source electrode 5 and a drain electrode formed on the organic semiconductor layer 2 with a predetermined gap. 6, an insulating layer 3 formed on a part of the organic semiconductor layer 2 so as to cover a part of the source electrode 5 and the drain electrode 6, and the insulating layer 3 between the source electrode 5 and the drain electrode 6. And a gate electrode 4 formed on a part of the insulating layer 3 so as to cover a part of the region.
- FIG. 4 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a fourth embodiment of the present invention.
- the organic thin film transistor 130 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and an insulating layer. 3, the source electrode 5 and the drain electrode 6 which are formed on the insulating layer 3 at a predetermined interval so as to cover a part thereof, and the insulating layer which covers a part of the source electrode 5 and the drain electrode 6. And the organic semiconductor layer 2 formed on the surface 3.
- FIG. 5 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a fifth embodiment of the present invention.
- the organic thin film transistor 140 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and an insulating layer.
- a source electrode 5 formed on the insulating layer 3 so as to cover a part of the source electrode 3, and an organic semiconductor layer 2 formed on a part of the insulating layer 3 so as to cover a part of the source electrode 5.
- the drain electrode 6 is formed so as to cover a part of the organic semiconductor layer 2 and to cover a part of the insulating layer 3 with a predetermined distance from the source electrode 5.
- FIG. 6 is a sectional view schematically showing an organic thin film transistor (field effect type organic thin film transistor) according to a sixth embodiment of the present invention.
- the organic thin film transistor 150 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and an insulating layer.
- a source electrode 5 formed so as to cover a part of the organic semiconductor layer 2 and a part of the insulating layer 3, and the organic semiconductor layer 2 of the organic semiconductor layer 2.
- the drain electrode 6 is formed so as to cover a part thereof and to cover a part of the insulating layer 3 with the source electrode 5 at a predetermined interval.
- FIG. 7 is a sectional view schematically showing an organic thin film transistor (static induction organic thin film transistor) according to a seventh embodiment of the present invention.
- the organic thin film transistor 160 includes a substrate 1, a source electrode 5 formed on the substrate 1, an organic semiconductor layer 2 formed on the source electrode 5, and a predetermined amount on the organic semiconductor layer 2.
- a plurality of gate electrodes 4 formed at intervals, an organic semiconductor layer 2a formed on the organic semiconductor layer 2 so as to cover all the gate electrodes 4, and a drain electrode 6 formed on the organic semiconductor layer 2a. And are equipped with.
- the material forming the organic semiconductor layer 2a may be the same as or different from the material forming the organic semiconductor layer 2.
- the organic semiconductor layer 2 (and the organic semiconductor layer 2a) contains the compound according to the preferred one aspect of the present invention, and the source electrode 5 and the drain electrode. It serves as a current passage (channel) between the first and second electrodes. Further, the gate electrode 4 is configured to control the amount of current passing through the organic semiconductor layer 2 (and the organic semiconductor layer 2a) forming a current path (channel) when a voltage is applied.
- the material of the substrate 1 is not particularly limited as long as it does not impair the characteristics of the organic thin film transistor, for example.
- the substrate 1 for example, a glass substrate, a silicon substrate, a film substrate which may be flexible, and a plastic substrate can be used.
- the organic semiconductor layer 2 it is preferable to use a compound that is soluble in an organic solvent so that coating can be performed, that is, it is advantageous in manufacturing an organic thin film transistor. Since the compound according to one embodiment of the present invention has excellent solubility, it is possible to favorably form an organic thin film to be the organic semiconductor layer 2 by adopting the method for producing an organic semiconductor film described above. You can
- the material of the insulating layer 3 may be any material as long as it has a high electric insulating property, and a known material can be used.
- Examples of the material of the insulating layer 3 include SiOx, SiNx, Ta 2 O 5 , polyimide, polyvinyl alcohol, polyvinyl phenol, organic glass, and photoresist. From the viewpoint of achieving a low voltage, the insulating layer 3 is preferably formed of a material having a high dielectric constant.
- the surface of the insulating layer 3 is treated with a surface treatment agent such as a silane coupling agent in order to improve the interface characteristics between the insulating layer 3 and the organic semiconductor layer 2. It is also possible to form the organic semiconductor layer 2 after the surface modification.
- a surface treatment agent such as a silane coupling agent
- the surface treatment agent include long-chain alkylchlorosilanes, long-chain alkylalkoxysilanes, arylalkylchlorosilanes, arylalkylalkoxysilanes, fluorinated alkylchlorosilanes, fluorinated alkylalkoxysilanes, and hexamethyldisilazane.
- silylamine compounds examples. It is also possible to treat the surface of the insulating layer 3 with ozone UV or O 2 plasma before treating with the surface treatment agent.
- Examples of the material of the gate electrode 4, the source electrode 5, and the drain electrode 6 include metals such as aluminum, gold, silver, copper, alkali metals and alkaline earth metals, and semitransparent films and transparent conductive films thereof. Be done.
- the organic thin film transistor is shielded from the atmosphere (air), and the deterioration of the characteristics of the organic thin film transistor can be suppressed.
- the protective film can reduce the influence of the display device driven by the organic thin film transistor on the organic thin film transistor from the outside in the step of forming the display device on the organic thin film transistor.
- Examples of the material of the protective film include UV curable resin, thermosetting resin, and SiONx which is an inorganic compound.
- Examples of the method of protecting the organic thin film transistor include a method of forming a protective film made of UV curable resin, thermosetting resin, or SiONx on the surface of the organic thin film transistor (covering the organic thin film transistor with the protective film). In order to effectively shield from the atmosphere, after the organic thin film transistor is manufactured, the steps up to forming the protective film are performed in an atmosphere that does not expose the organic thin film transistor to the atmosphere, for example, in a dry nitrogen atmosphere, or under a vacuum. It is preferable to carry out.
- Such a field effect type organic thin film transistor can be manufactured according to a known method, for example, the method described in JP-A-5-110069. Further, the electrostatic induction type organic thin film transistor can be manufactured according to a known method, for example, the method described in JP-A-2004-006476. (Application of organic thin film transistor)
- the above-mentioned organic thin film transistor is not particularly limited in its application and can be used, for example, in electronic paper, display devices, sensors, electronic tags and the like.
- the organic thin film solar cell has an organic semiconductor film (also referred to as an organic semiconductor layer or a semiconductor active layer), and can further have an anode electrode, a cathode electrode, a hole transport layer, and an electron transport layer.
- organic semiconductor film also referred to as an organic semiconductor layer or a semiconductor active layer
- the organic thin-film solar cell of the present invention only needs to have each of the above layers, and its structure is not particularly limited.
- the organic thin film solar cell may have any structure such as a forward layer type, an inverse layer type, or a tandem type (multi-junction type).
- FIG. 8 is a sectional view schematically showing a forward layer type organic photoelectric conversion element according to the eighth embodiment of the present invention.
- the organic photoelectric conversion element of FIG. 8 has a structure in which an anode 11, a hole transport layer 26, a photoelectric conversion layer 14, an electron transport layer 27, and a cathode 12 are laminated in this order on a substrate 25.
- the substrate 25 is a member that is optionally provided, mainly for facilitating the formation of the anode 11 thereon by a coating method.
- the organic photoelectric conversion element shown in FIG. 8 When the organic photoelectric conversion element shown in FIG. 8 is operating, light is emitted from the substrate 25 side.
- the anode 11 is made of a transparent electrode material (for example, ITO) so that the irradiated light reaches the photoelectric conversion layer 14.
- the light emitted from the substrate 25 side reaches the photoelectric conversion layer 14 via the transparent anode 11 and the hole transport layer 26.
- the photoelectric conversion layer 14 includes a p-type organic semiconductor and an n-type organic semiconductor.
- the electrons of the p-type organic semiconductor may be moved from the highest occupied orbital (hereinafter sometimes referred to as “HOMO”) to the lowest unoccupied orbital (hereinafter referred to as “LUMO”). Is excited) and then this electron moves to the conduction band of the n-type organic semiconductor. Then, the electron passes through the electron transport layer 27 and the cathode 12, and then moves to the conduction band of the conjugated polymer compound via the external circuit. Then, the electrons generated in the conduction band of the p-type organic semiconductor move to the LUMO level.
- HOMO highest occupied orbital
- LUMO lowest unoccupied orbital
- the photoelectric conversion layer 14 when light is incident on the photoelectric conversion layer 14, the holes generated at the HOMO level of the p-type organic semiconductor pass through the hole transport layer 26 and the anode 11, and then pass through the external circuit to pass through the n-type organic semiconductor. Move to the valence band of semiconductors. In this way, photocurrent flows in the photoelectric conversion layer 14 to generate power. It is considered that such photocharge separation is promoted as the contact interface between the p-type organic semiconductor and the n-type organic semiconductor is increased, and therefore the p-type organic semiconductor and the n-type organic semiconductor are integrated in the present invention. It is particularly preferable to use a bulk heterojunction type photoelectric conversion layer (not shown) mixed as described above. However, the photoelectric conversion layer 14 is not limited to such a form.
- the hole transport layer 26 is formed of a material having a high hole mobility, and has a function of efficiently transporting the holes purified at the pn junction interface of the photoelectric conversion layer 14 to the anode 11.
- the electron transport layer 27 is formed of a material having a high electron mobility, and has a function of efficiently transporting the electrons generated at the pn junction interface of the photoelectric conversion layer 14 to the cathode 12.
- FIG. 9 is a cross-sectional view schematically showing an inverse layer type organic photoelectric conversion element according to the ninth embodiment of the present invention.
- the organic photoelectric conversion element of FIG. 9 the anode 11 and the cathode 12 are arranged at opposite positions, and the hole transport layer 26 and the electron transport layer 27 are opposite to those of the organic photoelectric conversion element of FIG. The difference is that it is located at the position. That is, the organic photoelectric conversion element of FIG. 9 has a structure in which the cathode 12, the electron transport layer 27, the photoelectric conversion layer 14, the hole transport layer 26, and the anode 11 are laminated in this order on the substrate 25. There is. With such a configuration, electrons generated at the pn junction interface of the photoelectric conversion layer 14 are transported to the cathode 12 via the electron transport layer 27, and holes are transported to the anode 11 via the hole transport layer 26. Be transported to.
- FIG. 10 is a sectional view schematically showing an organic photoelectric conversion element provided with a tandem (multi-junction) photoelectric conversion layer according to a tenth embodiment of the present invention.
- the organic photoelectric conversion element of FIG. 10 has a first photoelectric conversion layer 14a, a second photoelectric conversion layer 14b, and two of these, instead of the photoelectric conversion layer 14. The difference is that a laminated body with the charge recombination layer 38 interposed between the photoelectric conversion layers is arranged.
- photoelectric conversion materials p-type organic semiconductor and n-type organic semiconductor having different absorption wavelengths are used for the first photoelectric conversion layer 14a and the second photoelectric conversion layer 14b, respectively. By using it, it becomes possible to efficiently convert light in a wider wavelength range into electricity.
- one embodiment of the present invention includes the inventions shown in [1] to [8] below.
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, An alkoxy group optionally substituted with Z, an alkylthio group optionally substituted with Z, an alkoxycarbonyl group optionally substituted with Z, an alkylcarbonyl group optionally substituted with Z, or with Z An aryl group which may be substituted; Q 1 and Q 2 are independently of each other a hydrogen atom, a halogen atom, an aryl group optionally substituted with Z, a heterocyclic group optionally substituted with Z, a formyl group, a boronic acid group, a boronic acid ester.
- X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- a 1 and A 2 are each independently CM 1 or N, and M 1 is a hydrogen atom, a halogen atom, an alkyl group which may be substituted with Z, a cyano group, An alkoxy group which may be substituted with Z, an alkylthio group which may be substituted with Z, an alkoxycarbonyl group which may be substituted with Z, an alkylcarbonyl group which may be substituted with Z, or Z is An aryl group which may be substituted; J 1 and J 2 are, independently of each other, a skeleton that imparts an electron donating property or an electron accepting property; X 1 and X 2 are independent of each other,
- M 2 to M 4 are independently of each other a hydrogen atom, a halogen atom, an alkyl group optionally substituted with Z, an alkoxy group optionally substituted with Z, or optionally substituted with Z.
- the compound represented by the general formula (2) is more preferably the compound represented by the general formula (2-1).
- a 1 , A 2 , X 1 and X 2 are as described above; D 1 , D 2 , G 1 and G 2 independently of each other are CM 1 or N and M 1 is as described above; m and n are, independently of each other, 0 or a natural number; T 1 and T 2 are independent of each other,
- R 1 to R 9 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, or an aryl group, and * represents a bond).
- the compound represented by the general formula (2-1) is more preferably the compound represented by the general formula (2-2).
- a 1 , A 2 , T 1 , T 2 , X 1 , X 2 , m and n are as described above; M 5 to M 8 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, or an aryl group).
- the organic semiconductor material according to the third aspect of the present invention is characterized by containing the compound according to the first or second aspect of the present invention.
- the organic semiconductor device according to the fourth aspect of the present invention is characterized by containing the organic semiconductor material according to the third aspect of the present invention.
- a method for producing a compound represented by the general formula (1) according to the fifth aspect of the present invention is the following (1), (2), (3), (4), (5), or ( Characterized by any one of 6); (1) (i) General formula (A5):
- a method for producing a compound represented by the above general formula (1-1) included in the above general formula (1) which comprises the step 3a of producing a compound represented by: (2)
- the compound of the general formula (1-2) is obtained by reacting the compound of the general formula (1-1) obtained in the step 3a with a boron compound.
- a method for producing a compound represented by the above general formula (1-2) included in the above general formula (1) which comprises the step 4a of producing a compound represented by: (3)
- the compound of the general formula (1-2) obtained in the step 4a is reacted with a halogenating agent to give a compound of the general formula (1-3):
- a method for producing a compound represented by the above general formula (1-3) included in the above general formula (1) which comprises the step 5a of producing a compound represented by: (4)
- the compound represented by the general formula (1-4) is prepared by reacting the compound represented by the general formula (1-3) with a boron compound or a tin compound.
- M 1 , X 1 and X 2 are as described above; Q 1b and Q 2b are independently of each other a hydrogen atom, an aryl group optionally substituted by Z, a heterocyclic group optionally substituted by Z, a boronic acid group, a boronic acid ester group, a diaminonaphthalene boronic acid.
- the compound of the general formula (1-5) is obtained by formylating the compound of the general formula (1-4):
- a method for producing a compound represented by the above general formula (1-6) included in the above general formula (1) which comprises the step 4b of producing a compound represented by:
- the method for producing a compound represented by the general formula (2) according to the sixth aspect of the present invention provides an electron donating property as Q 1 and Q 2 in the compound represented by the general formula (1).
- it is characterized in that J 1 and J 2 , which are skeletons imparting an electron accepting property, are introduced.
- the elemental analysis was performed using a product name “JM10” manufactured by J Science Lab.
- a product name “Silica gel 60N” (40 to 50 ⁇ m) manufactured by Kanto Chemical Co., Inc. was used. All the chemical substances used in the examples were reagent grade and were purchased from Wako Pure Chemical Industries, Ltd., Tokyo Chemical Industry Co., Ltd., Kanto Chemical Co., Inc., Nakarai Tesque Co., Ltd., or Sigma-Aldrich Japan Co., Ltd.
- reaction formula is shown below.
- reaction solution was cooled to room temperature, water was added to the reaction solution and extracted with toluene, and the organic layer was washed with saturated saline and water. The organic layer was dried over anhydrous sodium sulfate, filtered, and the solvent was evaporated under reduced pressure.
- the obtained reaction mixture was separated and purified by silica gel column chromatography using hexane as a mobile phase to obtain the following compound 5 (yellow solid, 94 mg, yield 46%).
- the reaction formula is shown below.
- reaction mixture was separated and purified by silica gel column chromatography using hexane / chloroform as a mobile phase to obtain the following compound 7 (red solid, 30 mg, yield 75%).
- the reaction formula is shown below.
- reaction mixture was separated and purified by silica gel column chromatography using chloroform as a moving layer, and then methanol was added to reprecipitate to obtain the following compound 9 (orange solid, 20 mg, yield 65%).
- the reaction formula is shown below.
- reaction mixture was separated and purified by silica gel column chromatography using hexane / chloroform as a mobile phase to obtain the following compound 11 (orange solid, 10 mg, yield 48%).
- the reaction formula is shown below.
- Compound 9 is included in the compounds represented by the general formula (2) according to one embodiment of the present invention.
- Examples of the compound represented by the general formula (2) include the compounds shown in Table 2 below. These compounds can be manufactured according to the manufacturing method of compound (2) mentioned above, and the method described in Example 1 and Example 2. In the table, Me represents a methyl group, Et represents an ethyl group, and * represents a bond.
- the compounds (2) -11, (2) -12, (2) -23 and (2) -24 are similar to the above-mentioned compounds (i-17) to (i-20), and are Although two types of notations are possible, one type of notation is used as a representative in the table, as in the description of other parts in the specification of the present application.
- Example 3 Performance evaluation of organic solar cells
- An organic solar cell was prepared using the synthesized compound 9 as an n-type organic semiconductor material, and the obtained organic solar cell was evaluated.
- a glass substrate is used as a substrate
- P3HT poly (3-hexylthiophene)
- ITO cathode
- aluminum anode
- PEDOT PSS (poly (4- Poly (3,4-ethylenedioxythiophene)) doped with (styrene sulfonic acid) was used, and Ca was used as an electron transport material.
- P3HT poly (3-hexylthiophene)
- ITO cathode
- aluminum anode
- PEDOT PSS (poly (4- Poly (3,4-ethylenedioxythiophene)) doped with (styrene sulfonic acid) was used, and Ca was used as an electron transport material.
- a solution prepared by dissolving P3HT (20 mg) and compound 9 (20 mg) in chloroform (1 mL) was prepared in advance.
- the glass substrate on which the ITO film was patterned was ultrasonically cleaned with toluene, acetone, water, and isopropanol for 15 minutes each, and then placed in a plasma cleaning machine. Then, while flowing oxygen gas into the plasma cleaning machine, the surface of the glass substrate was cleaned by the generated plasma for 20 minutes. Furthermore, ozone UV was irradiated for 90 minutes to wash the glass substrate surface. Then, a PEDOT: PSS thin film was formed on the ITO film using a spin coater film forming apparatus. Then, the glass substrate was annealed at 135 ° C. for 10 minutes. The formed PEDOT: PSS thin film had a thickness of 30 nm.
- the above-prepared solution was spin-coated (3000 rpm, 1 minute) on the PEDOT: PSS thin film using a spin coater film forming apparatus to form an organic semiconductor layer.
- the laminated body was annealed at 120 ° C. for 10 minutes.
- the produced laminated body is placed on a mask of the small high-vacuum vapor deposition apparatus, and Ca (20 nm) as an electron transport layer and an aluminum layer (80 nm) as a metal electrode are sequentially placed.
- a film was formed to produce a 3 mm square organic solar cell.
- FIG. 11 is a graph showing current density-voltage characteristics in the organic solar cell.
- Example 4 Performance evaluation of organic solar cells
- the synthesized compound 11 was used as an n-type organic semiconductor material to fabricate an organic solar cell, and the obtained organic solar cell was evaluated.
- a glass substrate is used as a substrate
- P3HT poly (3-hexylthiophene)
- ITO cathode
- aluminum anode
- PEDOT PSS (poly (4- Poly (3,4-ethylenedioxythiophene)) doped with (styrene sulfonic acid) was used, and Ca was used as an electron transport material.
- P3HT poly (3-hexylthiophene)
- ITO cathode
- aluminum anode
- PEDOT PSS (poly (4- Poly (3,4-ethylenedioxythiophene)) doped with (styrene sulfonic acid) was used, and Ca was used as an electron transport material.
- a solution prepared by dissolving P3HT (10 mg) and compound 11 (10 mg) in chloroform (1 mL) was prepared in advance.
- the glass substrate on which the ITO film was patterned was ultrasonically cleaned with toluene, acetone, water, and isopropanol for 15 minutes each, and then placed in a plasma cleaning machine. Then, while flowing oxygen gas into the plasma cleaning machine, the surface of the glass substrate was cleaned by the generated plasma for 20 minutes. Furthermore, ozone UV was irradiated for 90 minutes to wash the glass substrate surface. Then, a PEDOT: PSS thin film was formed on the ITO film using a spin coater film forming apparatus. Then, the glass substrate was annealed at 135 ° C. for 10 minutes. The formed PEDOT: PSS thin film had a thickness of 30 nm.
- the above-prepared solution was spin-coated (3000 rpm, 1 minute) on the PEDOT: PSS thin film using a spin coater film forming apparatus to form an organic semiconductor layer.
- the laminated body was annealed at 120 ° C. for 10 minutes.
- the produced laminated body is placed on a mask of the small high-vacuum vapor deposition apparatus, and Ca (20 nm) as an electron transport layer and an aluminum layer (80 nm) as a metal electrode are sequentially placed.
- a film was formed to produce a 3 mm square organic solar cell.
- FIG. 12 is a graph showing current density-voltage characteristics in the organic solar cell.
- the compound according to one embodiment of the present invention can achieve high photoelectric conversion efficiency as an n-type organic semiconductor material, which can be a substitute for a fullerene derivative, for example.
- An organic semiconductor material including the compound according to one embodiment of the present invention has high photoelectric conversion efficiency and charge mobility and excellent semiconductor characteristics; therefore, a photoelectric conversion element, an organic thin film transistor (a field effect transistor, or the like), a light emitting device, or the like. Can be used for various semiconductor devices.
- Substrate 2 Organic semiconductor layer 3 Insulating layer 4 Gate electrode 5 Source electrode 6 Drain electrode 100, 110, 120, 130, 140, 150, 160 Organic thin film transistor 11 Anode 12 Cathode 14 Photoelectric conversion layer 25 Substrate 26 Hole transport layer 27 Electrons Transport layer 38 Charge recombination layer
Abstract
Description
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
M1が、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、シアノ基、又は、Zで置換されていてもよいアルコキシ基であり;
M2~M4が互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、Zで置換されていてもよいアルコキシ基、Zで置換されていてもよいアルキルエステル基、Zで置換されていてもよいアルコキシカルボニル基、Zで置換されていてもよいアルキルアミノカルボニル基、Zで置換されていてもよいアシル基、Zで置換されていてもよいアミノ基、Zで置換されていてもよいアシルアミノ基、Zで置換されていてもよいアリール基、又は、Zで置換されていてもよい複素環基であり、M3及びM4がアルキル基又はアリール基である場合には、互いに結合して環を形成していてもよい場合の化合物も、本発明の第1の態様に係る化合物の一つである。
J1及びJ2は互いに独立して、電子供与性又は電子受容性を付与する骨格であり;
X1及びX2は互いに独立して、
M1が、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、シアノ基、又は、Zで置換されていてもよいアルコキシ基であり;
M2~M4が互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、Zで置換されていてもよいアルコキシ基、Zで置換されていてもよいアルキルエステル基、Zで置換されていてもよいアルコキシカルボニル基、Zで置換されていてもよいアルキルアミノカルボニル基、Zで置換されていてもよいアシル基、Zで置換されていてもよいアミノ基、Zで置換されていてもよいアシルアミノ基、Zで置換されていてもよいアリール基、又は、Zで置換されていてもよい複素環基であり、M3及びM4がアルキル基又はアリール基である場合には、互いに結合して環を形成していてもよい場合の化合物も、本発明の第2の態様に係る化合物の一つである。
本発明の一態様に係る化合物は、一般式(1)で表される。
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
本発明の一態様に係る化合物は、その構造に一般式(2)で表される骨格を有し、上記化合物(1)に電子供与性(ドナー性)或いは電子受容性(アクセプタ性)を付与する骨格を導入した構造を有する。又は、化合物(1)で表される骨格を繰り返し単位として有していてもよい。
D1、D2、G1及びG2は互いに独立して、CM1又はNであり、M1は、前述の通りであり;
m及びnは互いに独立して、0又は自然数であり;
T1及びT2は互いに独立して、アルケニレン基を含む環状の官能基を表す。例えば、以下に表される構造の官能基が好ましい。R1~R9は互いに独立して、水素原子、ハロゲン原子、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、又はアリール基を表す。R1~R9であるアルキル基、アルコキシ基、アルコキシカルボニル基、又はアルキルカルボニル基中のアルキル部分は、直鎖状又は分岐状であってもよく、炭素数は6~30であることが好ましく、8~24であることがより好ましい。また、アリール基としては、フェニル基、ナフチル基、アダマンチル基等が好ましい。なお、以下に表される構造における「*」は結合手を表す。
M5~M8は互いに独立して、水素原子、ハロゲン原子、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、又はアリール基である)。
前述した化合物(1)(中間体化合物)の製造方法は、特に限定されない。一例として、市販の化合物から下記一般式(A1)で表される化合物を合成し、チオフェン環を縮環したナフトビスチアジアゾールを製造することができる。好ましい工程を以下の反応スキームに沿って説明し、より具体的な一例は、後述する実施例に記載する。
一般式(i)で表される市販のナフタレンから、国際公開第2018/123207号公報に記載の実施例に基づき、一般式(A1)で表される化合物(以下、「化合物(A1)」と称する)を製造する(工程A)。化合物(A1)中、Halは互いに独立して、ハロゲン原子を表す。
次いで、化合物(A1)から、一般式(A2)で表される化合物(以下、「化合物(A2)」と称する)を製造する(工程B)。一般式(A2)中、TASはトリアルキルシリル基を表す。
次いで、化合物(A2)から、一般式(A3)で表される化合物(以下、「化合物(A3)」と称する)を製造する(工程C)。一般式(A3)中、R10及びR11は互いに独立して、置換されていてもよいアルキル基を表し、TASはトリアルキルシリル基を表す。
次いで、化合物(A3)から、一般式(1-1a)で表される化合物(以下、「化合物(1-1a)」と称する)を製造する(工程D)。一般式(1-1a)中、Halは前述の通りであり、TASはトリアルキルシリル基を表す。なお、化合物(1-1a)は、本発明の化合物(1)に包含される。
次いで、化合物(1-1a)から、一般式(1-2a)で表される化合物(以下、「化合物(1-2a)」と称する)を製造する(工程E)。一般式(1-2a)中、M1は前述の通りであり、二つのM1は互いに同一であってもよく、異なっていてもよい。TASはトリアルキルシリル基を表す。なお、化合物(1-2a)は、本発明の化合物(1)に包含される。
次いで、化合物(1-2a)から、一般式(1-3a)で表される化合物(以下、「化合物(1-3a)」と称する)を製造する(工程F)。一般式(1-3a)中、M1は前述の通りであり、Q1a及びQ2aは互いに独立して、ハロゲン原子を表す。なお、化合物(1-3a)は、本発明の化合物(1)に包含される。
次いで、化合物(1-3a)から、一般式(1-4a)で表される化合物(以下、「化合物(1-4a)」と称する)を製造する(工程G)。一般式(1-4a)中、M1は前述の通りであり、Q1b及びQ2bは互いに独立して、水素原子、アリール基、複素環基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基を表す。なお、化合物(1-4a)は、本発明の化合物(1)に包含される。
化合物(1)(中間体化合物)の製造方法は、前述した製造方法1に限定されない。他の一例として、上記工程Aにより一般式(A1)で表される化合物を合成し、チオフェン環を縮環したナフトビスチアジアゾールを製造することができる。好ましい工程を以下の反応スキームに沿って説明する。
化合物(A4)から、一般式(A5)で表される化合物(以下、「化合物(A5)」と称する)を製造する(工程I)。一般式(A5)中、Halは前述の通りであり、-X1-及び-X2-は互いに独立して、-O-、-S-、-Se-、-NM2-、又は-CM3=CM4-を表す。ここで、M2、M3、M4は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、Zで置換されていてもよいアルコキシ基、Zで置換されていてもよいアルキルエステル基、Zで置換されていてもよいアルコキシカルボニル基、Zで置換されていてもよいアルキルアミノカルボニル基、Zで置換されていてもよいアシル基、Zで置換されていてもよいアミノ基、Zで置換されていてもよいアシルアミノ基、Zで置換されていてもよいアリールオキシ基、Zで置換されていてもよいアリールオキシカルボニル基、Zで置換されていてもよいアシルオキシ基、Zで置換されていてもよいアルコキシカルボニルアミノ基、Zで置換されていてもよいアリールオキシカルボニルアミノ基、Zで置換されていてもよいアルキルチオ基、Zで置換されていてもよいアリールチオ基、Zで置換されていてもよいアリール基、又は、Zで置換されていてもよい複素環基を表し、M3及びM4は一緒になって環を形成していてもよく;Zは前述の通りである。
次いで、化合物(A5)から、一般式(A6)で表される化合物(以下、「化合物(A6)」と称する)を製造する(工程J)。一般式(A6)中、TASはトリアルキルシリル基を表す。
次いで、化合物(A6)から、一般式(A7)で表される化合物(以下、「化合物(A7)」と称する)を製造する(工程K)。一般式(A7)中、R10及びR11は互いに独立して、置換されていてもよいアルキル基を表し、TASはトリアルキルシリル基を表す。
次いで、化合物(A7)から、一般式(1-1)で表される化合物(以下、「化合物(1-1)」と称する)を製造する(工程L)。一般式(1-1)中、Halは前述の通りであり、TASはトリアルキルシリル基を表す。なお、化合物(1-1)は、本発明の化合物(1)に包含される。
次いで、化合物(1-1)から、一般式(1-2)で表される化合物(以下、「化合物(1-2)」と称する)を製造する(工程M)。一般式(1-2)中、M1は前述の通りであり、二つのM1は互いに同一であってもよく、異なっていてもよい。TASはトリアルキルシリル基を表す。なお、化合物(1-2)は、本発明の化合物(1)に包含される。
次いで、化合物(1-2)から、一般式(1-3)で表される化合物(以下、「化合物(1-3)」と称する)を製造する(工程N)。一般式(1-3)中、M1は前述の通りであり、Q1a及びQ2aは互いに独立して、ハロゲン原子を表す。なお、化合物(1-3)は、本発明の化合物(1)に包含される。
次いで、化合物(1-3)から、一般式(1-4)で表される化合物(以下、「化合物(1-4)」と称する)を製造する(工程O)。一般式(1-4)中、M1は前述の通りであり、Q1b及びQ2bは互いに独立して、水素原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基を表す。なお、化合物(1-4)は、本発明の化合物(1)に包含される。
次いで、化合物(1-4)をホルミル化することにより、一般式(1-5)で表される化合物(以下、「化合物(1-5)」と称する)を製造する(工程O-b)。一般式(1-5)中、M1は前述の通りであり、Q1c及びQ2cは互いに独立して、ホルミル基を表す。なお、化合物(1-5)は、本発明の化合物(1)に包含される。工程O-bでは常法により、ホルミル化が行われる。
化合物(1)(中間体化合物)の製造方法は、前述した製造方法1,2に限定されない。更に他の一例として、市販の化合物から下記一般式(A8)で表される化合物を合成し、チアゾール環を縮環したナフトビスチアジアゾールを製造することができる。好ましい工程を以下の反応スキームに沿って説明する。
化合物(A8)から、一般式(A9)で表される化合物(以下、「化合物(A9)」と称する)を製造する(工程Q)。一般式(A9)中、-X1-及び-X2-は互いに独立して、-O-、-S-、-Se-、-NM2-、又は-CM3=CM4-を表す。ここで、M2、M3、M4は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアルキル基、Zで置換されていてもよいアルコキシ基、Zで置換されていてもよいアルキルエステル基、Zで置換されていてもよいアルコキシカルボニル基、Zで置換されていてもよいアルキルアミノカルボニル基、Zで置換されていてもよいアシル基、Zで置換されていてもよいアミノ基、Zで置換されていてもよいアシルアミノ基、Zで置換されていてもよいアリールオキシ基、Zで置換されていてもよいアリールオキシカルボニル基、Zで置換されていてもよいアシルオキシ基、Zで置換されていてもよいアルコキシカルボニルアミノ基、Zで置換されていてもよいアリールオキシカルボニルアミノ基、Zで置換されていてもよいアルキルチオ基、Zで置換されていてもよいアリールチオ基、Zで置換されていてもよいアリール基、又は、Zで置換されていてもよい複素環基を表し、M3及びM4は一緒になって環を形成していてもよく;Zは前述の通りである。
次いで、化合物(A9)から、一般式(A10)で表される化合物(以下、「化合物(A10)」と称する)を製造する(工程R)。
次いで、化合物(A10)から、一般式(A11)で表される化合物(以下、「化合物(A11)」と称する)を製造する(工程S)。
次いで、化合物(A11)と一般式(ii)(Q1-CO2Cl)で表されるカルボン酸塩化物(以下、「化合物(ii)」と称する)及び一般式(iii)(Q2-CO2Cl)で表されるカルボン酸塩化物(以下、「化合物(iii)」と称する)とから、一般式(A12)で表される化合物(以下、「化合物(A12)」と称する)を製造する(工程T)。上記一般式(ii)、一般式(iii)及び一般式(A12)中、Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、アリール基、複素環基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基を表す。化合物(ii)及び化合物(iii)は、市販のカルボン酸を用いて、例えば、文献:Synthesis 2003, 18, 2795-2798.を参考にして合成することができる。
次いで、化合物(A12)から、一般式(1-6)で表される化合物(以下、「化合物(1-6)」と称する)を製造する(工程U)。なお、化合物(1-6)は、本発明の化合物(1)に包含される。
前述した化合物(2)の製造方法は、特に限定されない。化合物(2)は、前述した化合物(1)のQ1及びQ2として、電子供与性又は電子受容性を付与する骨格であるJ1及びJ2を通常の方法により導入する工程を行うことによって製造することができる。好ましい工程を以下の反応スキームに沿って説明する。
化合物(1)と一般式(iv)で表される化合物(以下、「化合物(iv)」と称する)及び一般式(v)で表される化合物(以下、「化合物(v)」と称する)とから、一般式(A13)で表される化合物(以下、「化合物(A13)」と称する)を製造する(工程V)。
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
次いで、化合物(A13)から、一般式(A14)で表される化合物(以下、「化合物(A14)」と称する)を製造する(工程W)。化合物(A14)中のD1、D2、G1及びG2は、前述の通りである。また、m及びnも、前述の通りである。
化合物(A14)と一般式(vi)で表される市販の化合物(以下、「化合物(vi)」と称する)及び一般式(vii)で表される市販の化合物(以下、「化合物(vii)」と称する)とから、一般式(2-1)で表される化合物(以下、「化合物(2-1)」と称する)を製造する(工程X)。化合物(vi)中のT1、並びに化合物(vii)中のT2は、前述の通りであり、互いに独立して、アルケニレン基を含む環状の官能基である前述の何れかの構造を表す。化合物(2-1)中のD1、D2、G1及びG2は、前述の通りである。また、m及びnも、前述の通りである。なお、化合物(2-1)は、本発明の化合物(2)に包含される。
M5~M8は互いに独立して、水素原子、ハロゲン原子、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、又はアリール基である。
化合物(2)を含有する本発明の一態様に係る有機半導体材料は、前述したように、剛直で高い平面性を持つので、当該有機半導体材料を製膜して有機半導体層(半導体活性層)を作製したときに、有機半導体層中における分子間距離が短くなり、高い電荷移動度を発揮することができる。
前述した本発明の一態様に係る有機半導体材料は、これを備えた有機半導体デバイスとすることができる。即ち、基板等の上に有機半導体材料を用いて製膜された有機半導体層(半導体活性層)を備えた有機半導体デバイスを製造することができる。本発明の一態様に係る有機半導体デバイスとしては、例えば、有機半導体層を有する光電変換素子、有機薄膜トランジスタ(電界効果トランジスタ等)、発光デバイス等、種々のデバイスが挙げられる。
有機半導体膜形成用組成物は、本発明の一態様に係る化合物を含有し、有機半導体膜の形成に好ましく用いられる。
有機半導体膜形成用組成物がバインダーポリマーを含有していると、膜質の高い有機半導体膜が得られる。
有機半導体膜形成用組成物は、溶媒を含有していてもよい。このような溶媒としては、前述の化合物を溶解又は分散させる溶媒であれば特に限定されず、無機溶媒又は有機溶媒が挙げられる。中でも、有機溶媒が好ましい。溶媒は、1種類のみを用いてもよいし、2種類以上を併用してもよい。
有機半導体膜形成用組成物は、前述したように、本発明の一態様に係る化合物及び溶媒の他に、必要に応じて添加剤や他の半導体材料等のその他の成分を含有してもよい。上記添加剤としては、有機半導体膜形成用組成物に通常用いられる添加剤を用いることができ、特に限定されない。上記添加剤としては、例えば、界面活性剤、酸化防止剤、結晶化制御剤、又は結晶配向制御剤等が挙げられる。界面活性剤及び酸化防止剤としては、例えば、特開2015-195362号公報の段落〔0136〕及び〔0137〕に記載されている界面活性剤及び酸化防止剤が挙げられ、当該段落の記載がそのまま本明細書に好ましく取り込まれる。
有機半導体膜形成用組成物の調製方法としては、特に限定されず、通常の調製方法を採用することができる。例えば、所定量の各成分を混合機や撹拌機等を用いて適宜、混合処理することにより、有機半導体膜形成用組成物を調製することができる。
次に、有機半導体膜に関して説明する。有機半導体膜は、本発明の一態様に係る化合物を含んでいる。有機半導体膜の膜厚は、1nm~1000nmであることが好ましく、2nm~1000nmであることがより好ましく、5nm~500nmであることが更に好ましく、20nm~200nmであることが特に好ましい。
有機半導体膜の製造方法は、前述した有機半導体膜形成用組成物を基板上に塗布する工程を有する方法であれば、特に限定されない。
次に、本発明の一態様に係る化合物を用いた前述の有機半導体デバイスの中でもより好ましい形態である、有機薄膜トランジスタ(有機TFTとも称する)に関して説明する。
(有機薄膜トランジスタの用途)
前述の有機薄膜トランジスタは、その用途に関しては特に限定されず、例えば、電子ペーパー、ディスプレイデバイス、センサ、電子タグ等に使用することができる。
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
J1及びJ2は互いに独立して、電子供与性又は電子受容性を付与する骨格であり;
X1及びX2は互いに独立して、
D1、D2、G1及びG2は互いに独立して、CM1又はNであり、M1は、前述の通りであり;
m及びnは互いに独立して、0又は自然数であり;
T1及びT2は互いに独立して、
M5~M8は互いに独立して、水素原子、ハロゲン原子、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、又はアリール基である)。
(1)(i)一般式(A5):
X1及びX2は、前述の通りである)
で表される化合物を製造する第1a工程、
(ii)第1a工程で得た一般式(A6)の化合物と硫化剤とを反応させ、一般式(A7):
R10及びR11は互いに独立して、Zで置換されていてもよいアルキル基であり、Zは前述の通りである)
で表される化合物を製造する第2a工程、及び、
(iii)第2a工程で得た一般式(A7)の化合物とハロゲン化剤とを反応させ、一般式(1-1):
で表される化合物を製造する第3a工程を含む、上記一般式(1)に包含される上記一般式(1-1)で表される化合物の製造方法;
(2)上記第3a工程で得た一般式(1-1)の化合物とホウ素化合物とを反応させて、一般式(1-2):
で表される化合物を製造する第4a工程を含む、上記一般式(1)に包含される上記一般式(1-2)で表される化合物の製造方法;
(3)上記第4a工程で得た一般式(1-2)の化合物とハロゲン化剤とを反応させて、一般式(1-3):
Q1a及びQ2aは互いに独立して、ハロゲン原子である)
で表される化合物を製造する第5a工程を含む、上記一般式(1)に包含される上記一般式(1-3)で表される化合物の製造方法;
(4)上記一般式(1-3)の化合物と、ホウ素化合物又はスズ化合物とを反応させて、一般式(1-4):
Q1b及びQ2bは互いに独立して、水素原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基である)
を製造する第6a工程を含む、上記一般式(1)に包含される上記一般式(1-4)で表される化合物の製造方法;
(5)上記一般式(1-4)の化合物をホルミル化することによる、一般式(1-5):
で表される化合物を製造する第1b工程、
(ii)第1b工程で得た一般式(A10)の化合物と、アミノ化剤とを反応させて、一般式(A11):
で表される化合物を製造する第2b工程、
(iii)第2b工程で得た一般式(A11)の化合物と、Q1-CO2Clで表される化合物(Q1は、前述の通りである)及びQ2-CO2Clで表される化合物(Q2は、前述の通りである)とを反応させて、一般式(A12):
で表される化合物を製造する第3b工程、及び、
(iv)第3b工程で得た一般式(A12)の化合物と硫化剤とを反応させて、一般式(1-6):
核磁気共鳴(NMR)スペクトルは、JEOL(日本電子株式会社)製の商品名「JMM-ECS400(1H測定時400MHz)」を用いて測定した。ケミカルシフトは、百万分率(ppm)で表される。内部標準(0ppm)には、テトラメチルシラン(TMS)を用いた。結合定数(J)は、ヘルツで表され、略号「s」、「d」、「t」、「q」、「m」、及び「br」は、それぞれ、一重線(singlet)、二重線(doublet)、三重線(triplet)、四重線(quartet)、多重線(multiplet)、及び広幅線(broad)を表す。また、質量分析(MALDI TOFMS)は、株式会社島津製作所製の商品名「AXIMA」を用いて測定した。元素分析は、株式会社ジェイ・サイエンス・ラボ製の商品名「JM10」を用いて測定した。カラムクロマトグラフィー分離におけるシリカゲルは、関東化学株式会社製の商品名「シリカゲル 60N」(40~50μm)を用いた。実施例で用いた全ての化学物質は試薬級であり、和光純薬工業株式会社、東京化成工業株式会社、関東化学株式会社、ナカライテスク株式会社、又はシグマアルドリッチジャパン株式会社より購入した。
(化合物1の合成)
国際公開第2018/123207号公報に記載の実施例に基づき、下記化合物1を合成した。
20mL試験管に、化合物1(172mg,0.393mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(45mg,0.039mmol)、ヨウ化銅(7mg,0.04mmol)、トリエチルシリルアセチレン(551mg,3.93mmol)、トルエン(7mL)、及びトリエチルアミン(3.5mL)を加えて反応液とし、試験管内を窒素置換した。その後、反応液を110℃で18時間撹拌した。反応液を室温まで冷却した後に、反応液にクロロホルムを加え、セライトで濾過後、溶媒を減圧下で留去した。得られた反応混合物を、ヘキサン:塩化メチレン(10:1)溶媒を移動層とするシリカゲルカラムクロマトグラフィーで分離精製して下記化合物2を得た(黄褐色固体,170mg,収率78%)。反応式を以下に示す。
200mLナス型フラスコに、化合物2(186mg,0.334mmol)及びテトラヒドロフラン(15mL)を入れ、化合物2を溶解させた。次に、氷浴下でナトリウムチオメトキシド(70mg,1.0mmol)を加え、0℃で3時間撹拌した。その後、反応液に氷水を加え、クロロホルムで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去して下記化合物3を得た(赤褐色固体,170mg,収率83%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=2.76(s,6H),1.17(t,J=7.8Hz,18H),0.83(q,J=7.8Hz,12H)。
200mLナス型フラスコに、化合物3(170mg,0.277mmol)及び塩化メチレン(50mL)を入れ、化合物3を溶解させた。次に、ヨウ素(353mg,1.39mmol)を加え、室温で17時間撹拌した。その後、溶媒を減圧下で留去した。得られた反応混合物にメタノールを加え、析出した固体を濾取し、当該固体をメタノールで洗浄して下記化合物4を得た(褐色固体,214mg,収率92%)。反応式を以下に示す。
50mL試験管に、化合物4(221mg,0.252mmol)、オクチルボロン酸(199mg,1.26mmol)、SPhos(2-Dicyclohexylphosphino-2’,6’-dimethoxybiphenyl)(8mg,0.02mmol)、酢酸パラジウム(2mg,0.01mmol)、及びトルエン10mLを加えて反応液とし、試験管内を窒素置換した。その後、反応液を100℃で16時間撹拌した。反応液を室温まで冷却した後に、反応液に水を加え、トルエンで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去した。得られた反応混合物を、ヘキサンを移動層とするシリカゲルカラムクロマトグラフィーで分離精製して下記化合物5を得た(黄色固体,94mg,収率46%)。反応式を以下に示す。
1HNMR(400MHz,CDCl3,TMS)δ=3.49-3.45(m,4H),1.82-1.72(m,4H),1.66-1.59(m,4H),1.45-1.33(m,16H),1.10(s,30H),0.91(t,J=7.0Hz,6H)。
100mLナス型フラスコに、化合物5(67mg,0.083mmol)及びクロロホルム(8mL)を入れ、化合物5を溶解させた。次に、臭素(66mg,0.41mmol)を加え、室温で30分間撹拌した後、40℃で1時間撹拌した。反応液を室温まで冷却した後に、反応液にメタノールを加えた。得られた反応混合物を濾過し、メタノールで洗浄することで下記化合物6を得た(黄褐色固体,54mg,収率88%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=3.42(t,J=7.8Hz,4H),1.77(q,7.8Hz,4H),1.44-1.24(m,16H),0.89(t,J=7.0Hz,6H)。MS(MALDI)m/z=737.79(M+)。
反応容器に、化合物6(30mg,0.04mmol)、4-(2-エチルヘキシル)-2-トリブチルスタニルチオフェン(60mg,0.12mmol)、触媒であるテトラキス(トリフェニルホスフィン)パラジウム(0)(5mg,0.004mmol)、及びトルエン(2mL)を加えて反応液とし、反応容器を窒素置換した。その後、μ-ウェーブリアクターを用いて反応液を180℃で10分間反応させた。反応液を室温まで冷却した後に、反応液に水を加え、クロロホルムで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去した。得られた反応混合物を、ヘキサン/クロロホルムを移動層とするシリカゲルカラムクロマトグラフィーで分離精製して下記化合物7を得た(赤色固体,30mg,収率75%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=7.19(s,2H),7.02(s,2H),3.43-3.35(m,4H),2.69-2.60(m,4H),1.80-1.65(m,6H),1.5-1.2(m,36H),1.0-0.89(m,18H)。
反応容器に、化合物7(30mg,0.03mmol)と1,2-ジクロロエタン(3mL)とを加えて反応液とした。次に、反応液を0℃に冷却した後に、氷浴下でN,N-ジメチルホルムアミド(68mg)、及び塩化ホスホリル(120mg,0.80mmol)を加えた。その後、反応液を95℃に昇温して12時間反応させた。反応液を室温まで冷却した後に、反応液に水を加え、クロロホルムで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去した。得られた反応混合物を、ヘキサン/クロロホルムを移動層とするシリカゲルカラムクロマトグラフィーで分離精製して下記化合物8を得た(橙色固体,25mg,収率80%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=10.06(s,2H),7.19(s,2H),3.35(t,J=8.0Hz,4H),2.93(d,J=6.8Hz,2H),1.8-1.2(m,36H),1.0-0.90(m,18H)。
反応容器に、化合物8(25mg,0.02mmol)、3-エチルロダニン(24mg,0.15mmol)、及びクロロホルム(2mL)を加えて反応液とした。次に、反応液に一滴のピペリジンを加えた後、反応容器を窒素置換した。その後、反応液を12時間還流させた。反応液を室温まで冷却した後に、反応液に水を加え、クロロホルムで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去した。得られた反応混合物を、クロロホルムを移動層とするシリカゲルカラムクロマトグラフィーで分離精製した後、メタノールを加えて再沈殿させて下記化合物9を得た(橙色固体,20mg,収率65%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=7.95(s,2H),7.37(s,2H),4.3-4.2(m,4H),2.79(d,J=7.2Hz,4H),2.0-1.8(m,6H),1.8-1.6(m,6H),1.4-1.2(m,40H),1.00-0.80(m,18H)。MS(MALDI)m/z=1311.68(M+)。
(化合物11の合成)
反応容器に、化合物9(12mg,0.016mmol)、化合物10(18mg,0.036mmol)、1mol/L炭酸カリウム水溶液(0.2mL,0.2mmol)、触媒であるテトラキス(トリフェニルホスフィン)パラジウム(0)(2mg,0.002mmol)、及びトルエン(2mL)を加えて反応液とし、反応容器を窒素置換した。その後、μ-ウェーブリアクターを用いて、反応液を150℃で10分間反応させた。反応液を室温まで冷却した後に、反応液に水を加え、クロロホルムで抽出し、有機層を飽和食塩水、及び水で洗浄した。有機層を無水硫酸ナトリウムで乾燥し、濾過した後、溶媒を減圧下で留去した。得られた反応混合物を、ヘキサン/クロロホルムを移動層とするシリカゲルカラムクロマトグラフィーで分離精製して下記化合物11を得た(橙色固体,10mg,収率48%)。反応式を以下に示す。
1H-NMR(400MHz,CDCl3,TMS)δ=8.23(s,2H),8.11-8.08(m,4H),8.04-7.96(m,2H),7.95-7.87(m,2H),7.83(d,J=7.2Hz,2H),7.60-7.52(m,2H),4.45-4.36(m,2H),3.40-3.20(m,4H),2.18-2.06(m,2H),1.88-1.76(m,2H),1.70-1.58(m,8H),1.42-0.92(m,28H),0.88-0.85(m,6H),0.70(t,J=7.2Hz,6H)。
続いて、一般式(1)で表される本発明の一態様に係る化合物に包含される、以下に示す化合物(i-1)~(i-20)の基本骨格の最高被占有軌道(以下、「HOMO」と称する場合がある)及び最低空軌道(以下、「LUMO」と称する場合がある)の軌道エネルギーを算出した。その結果を第1表に示す。
(有機太陽電池の性能評価)
合成した化合物9をn型有機半導体材料として用いて有機太陽電池を作製し、得られた有機太陽電池の評価を行った。
(有機太陽電池の性能評価)
合成した化合物11を、n型有機半導体材料として用いて有機太陽電池を作製し、得られた有機太陽電池の評価を行った。
2 有機半導体層
3 絶縁層
4 ゲート電極
5 ソース電極
6 ドレイン電極
100、110、120、130、140、150、160 有機薄膜トランジスタ
11 陽極
12 陰極
14 光電変換層
25 基板
26 正孔輸送層
27 電子輸送層
38 電荷再結合層
Claims (8)
- 一般式(1):
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
Zはアルキル基、シクロアルキル基、アルケニル基、アルキニル基、アリール基、アシル基、アルコキシカルボニル基、アミノ基、アルコキシ基、シクロアルキルオキシ基、アリールオキシ基、アリールオキシカルボニル基、アシルオキシ基、アシルアミノ基、アルコキシカルボニルアミノ基、アリールオキシカルボニルアミノ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、シリル基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ハロゲン原子、ヒドロキシル基、メルカプト基、シアノ基、スルホ基、カルボキシル基、ニトロ基、ヒドロキサム酸基、スルフィノ基、ヒドラジノ基、又はイミノ基である)
で表される化合物。 - 一般式(2):
J1及びJ2は互いに独立して、電子供与性又は電子受容性を付与する骨格であり;
X1及びX2は互いに独立して、
Zはアルキル基、シクロアルキル基、アルケニル基、アルキニル基、アリール基、アシル基、アルコキシカルボニル基、アミノ基、アルコキシ基、シクロアルキルオキシ基、アリールオキシ基、アリールオキシカルボニル基、アシルオキシ基、アシルアミノ基、アルコキシカルボニルアミノ基、アリールオキシカルボニルアミノ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、シリル基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ハロゲン原子、ヒドロキシル基、メルカプト基、シアノ基、スルホ基、カルボキシル基、ニトロ基、ヒドロキサム酸基、スルフィノ基、ヒドラジノ基、又はイミノ基である)
で表される化合物。 - 請求項2~4の何れか一項に記載の化合物を含有する有機半導体材料。
- 請求項5に記載の有機半導体材料を含有する有機半導体デバイス。
- 下記(1)、(2)、(3)、(4)、(5)、又は(6)の何れかの方法による、一般式(1):
Q1及びQ2は互いに独立して、水素原子、ハロゲン原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ホルミル基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基であり;
X1及びX2は互いに独立して、
Zはアルキル基、シクロアルキル基、アルケニル基、アルキニル基、アリール基、アシル基、アルコキシカルボニル基、アミノ基、アルコキシ基、シクロアルキルオキシ基、アリールオキシ基、アリールオキシカルボニル基、アシルオキシ基、アシルアミノ基、アルコキシカルボニルアミノ基、アリールオキシカルボニルアミノ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、シリル基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ハロゲン原子、ヒドロキシル基、メルカプト基、シアノ基、スルホ基、カルボキシル基、ニトロ基、ヒドロキサム酸基、スルフィノ基、ヒドラジノ基、又はイミノ基である)
で表される化合物の製造方法;
(1)(i)一般式(A5):
X1及びX2は、前述の通りである)
で表される化合物とトリアルキルシリルアセチレンとを反応させて、一般式(A6):
X1及びX2は、前述の通りである)
で表される化合物を製造する第1a工程、
(ii)第1a工程で得た一般式(A6)の化合物と硫化剤とを反応させ、一般式(A7):
R10及びR11は互いに独立して、Zで置換されていてもよいアルキル基であり、Zは前述の通りである)
で表される化合物を製造する第2a工程、及び、
(iii)第2a工程で得た一般式(A7)の化合物とハロゲン化剤とを反応させ、一般式(1-1):
で表される化合物を製造する第3a工程を含む、上記一般式(1)に包含される上記一般式(1-1)で表される化合物の製造方法;
(2)上記第3a工程で得た一般式(1-1)の化合物とホウ素化合物とを反応させて、一般式(1-2):
で表される化合物を製造する第4a工程を含む、上記一般式(1)に包含される上記一般式(1-2)で表される化合物の製造方法;
(3)上記第4a工程で得た一般式(1-2)の化合物とハロゲン化剤とを反応させて、一般式(1-3):
Q1a及びQ2aは互いに独立して、ハロゲン原子である)
で表される化合物を製造する第5a工程を含む、上記一般式(1)に包含される上記一般式(1-3)で表される化合物の製造方法;
(4)上記一般式(1-3)の化合物と、ホウ素化合物又はスズ化合物とを反応させて、一般式(1-4):
Q1b及びQ2bは互いに独立して、水素原子、Zで置換されていてもよいアリール基、Zで置換されていてもよい複素環基、ボロン酸基、ボロン酸エステル基、ボロン酸ジアミノナフタレンアミド基、ボロン酸N-メチルイミノ二酢酸エステル基、トリフルオロボレート塩基、トリオールボレート塩基、トリアルキルシリル基、又はトリアルキルスタニル基である)
を製造する第6a工程を含む、上記一般式(1)に包含される上記一般式(1-4)で表される化合物の製造方法;
(5)上記一般式(1-4)の化合物をホルミル化することによる、一般式(1-5):
(6)(i)一般式(A9):
で表される化合物とハロゲン化剤とを反応させて、一般式(A10):
で表される化合物を製造する第1b工程、
(ii)第1b工程で得た一般式(A10)の化合物とアミノ化剤とを反応させて、一般式(A11):
で表される化合物を製造する第2b工程、
(iii)第2b工程で得た一般式(A11)の化合物と、Q1-CO2Clで表される化合物(Q1は、前述の通りである)及びQ2-CO2Clで表される化合物(Q2は、前述の通りである)とを反応させて、一般式(A12):
で表される化合物を製造する第3b工程、及び、
(iv)第3b工程で得た一般式(A12)の化合物と硫化剤とを反応させて、一般式(1-6):
で表される化合物を製造する第4b工程を含む、上記一般式(1)に包含される上記一般式(1-6)で表される化合物の製造方法。 - 請求項1に記載の一般式(1)で表される化合物中のQ1及びQ2として、電子供与性又は電子受容性を付与する骨格であるJ1及びJ2を導入することを特徴とする、請求項2に記載の一般式(2)で表される化合物の製造方法。
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KR20220057761A (ko) * | 2020-10-30 | 2022-05-09 | 김규식 | 화합물, 그를 포함하는 광전 변환 소자 및 이미지 센서 |
KR102437058B1 (ko) | 2020-10-30 | 2022-08-26 | 김규식 | 화합물, 그를 포함하는 광전 변환 소자 및 이미지 센서 |
WO2022249972A1 (ja) * | 2021-05-27 | 2022-12-01 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ、化合物 |
Also Published As
Publication number | Publication date |
---|---|
JP7365025B2 (ja) | 2023-10-19 |
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CN112930351B (zh) | 2024-04-26 |
TWI821439B (zh) | 2023-11-11 |
US20210399228A1 (en) | 2021-12-23 |
CN112930351A (zh) | 2021-06-08 |
TW202035420A (zh) | 2020-10-01 |
EP3882251A1 (en) | 2021-09-22 |
KR20210084507A (ko) | 2021-07-07 |
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