WO2020059605A1 - Boîtier de semi-conducteur - Google Patents

Boîtier de semi-conducteur Download PDF

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Publication number
WO2020059605A1
WO2020059605A1 PCT/JP2019/035755 JP2019035755W WO2020059605A1 WO 2020059605 A1 WO2020059605 A1 WO 2020059605A1 JP 2019035755 W JP2019035755 W JP 2019035755W WO 2020059605 A1 WO2020059605 A1 WO 2020059605A1
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WO
WIPO (PCT)
Prior art keywords
heat
semiconductor package
graphite
anisotropic graphite
crystal orientation
Prior art date
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PCT/JP2019/035755
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English (en)
Japanese (ja)
Inventor
真琴 沓水
一喜 筒井
聡志 奥
Original Assignee
株式会社カネカ
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Publication date
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Publication of WO2020059605A1 publication Critical patent/WO2020059605A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present invention relates to a semiconductor package.
  • a rise in temperature due to heat generated from a semiconductor element becomes a problem.
  • a semiconductor package including a semiconductor element, a heat diffusion member, and a cooling member such as a heat sink in order to suppress a temperature rise of the semiconductor package is known.
  • the heat diffusion member is a member that transmits heat from the semiconductor element to the cooling member, and is made of metal and / or anisotropic graphite.
  • Anisotropic graphite is composed of a number of graphite layers and has a crystal orientation plane. Anisotropic graphite exhibits high thermal conductivity in a direction parallel to the crystal orientation plane of anisotropic graphite and low thermal conductivity in a direction perpendicular thereto.
  • Patent Literature 1 discloses a structure in which a graphene sheet is stacked, an anisotropic heat conductive element including a support member, and a structure in which the anisotropic heat conductive element is combined with a heat source and a heat sink. It has been disclosed.
  • Patent Literature 1 does not describe the relationship between the direction in which the heat diffusion member and the cooling member are arranged and the cooling efficiency.
  • the object of the present invention is to provide a semiconductor package having an excellent cooling performance provided with a heat diffusion member for efficiently transmitting heat generated from a semiconductor element to a cooling member.
  • the present inventors in the semiconductor package, by arranging the cooling member so that the crystal orientation plane of the anisotropic graphite constituting the heat diffusion member, the heat transfer direction or the heat transfer surface of the cooling member intersect, The present inventors have found that a semiconductor package having excellent cooling efficiency can be provided, and have completed the present invention. That is, the present invention includes the following.
  • a semiconductor package with excellent cooling efficiency can be provided.
  • FIG. 1 is a perspective view of a semiconductor package 1 according to one embodiment of the present invention.
  • 1 is a perspective view of a semiconductor package 2 according to one embodiment of the present invention.
  • FIG. 2 is a perspective view of a semiconductor package 3 according to one embodiment of the present invention.
  • FIG. 2 is a plan view of a semiconductor package 4 according to one embodiment of the present invention.
  • FIG. 2 is a perspective view of a semiconductor package 5 according to one embodiment of the present invention.
  • a to B representing a numerical range means “A or more and B or less”.
  • an axis perpendicular to the X axis is defined as a Y axis
  • an axis perpendicular to a plane defined by the X axis and the Y axis is defined as a Z axis.
  • One embodiment of the present invention is a semiconductor package including (A) a semiconductor element, (B) a heat diffusion member, and (C) a cooling member, wherein (B) the heat diffusion member includes anisotropic graphite, A semiconductor package in which the cooling member is arranged such that a heat transfer direction or a heat transfer surface of the cooling member intersects a crystal orientation plane of isotropic graphite.
  • FIG. 1 shows (C) a semiconductor package 1 in which the cooling member is a heat sink.
  • FIG. 2 shows (C) the semiconductor package 2 in which the cooling member is a heat pipe.
  • FIG. 3 shows (D) the semiconductor package 3 including the auxiliary cooling member.
  • FIG. 4 shows a plan view of the semiconductor package 4 defining the intersection angle.
  • FIG. 5 shows a semiconductor package 5 which is (C) three heat pipes in which cooling members are arranged in parallel, and (D) includes an auxiliary cooling member.
  • the semiconductor element (A) is not particularly limited, but examples include a transistor, a diode, an integrated circuit, and a memory.
  • the (B) heat diffusion member according to one embodiment of the present invention contains at least (b1) anisotropic graphite.
  • the heat diffusion member is preferably formed by laminating (b1) an inorganic material layer on (b1) anisotropic graphite, and further joining the anisotropic graphite and the inorganic material layer (b2). More preferably, a metal layer is included.
  • the inorganic material layer is preferably laminated between the anisotropic graphite and the semiconductor element or between the anisotropic graphite and the cooling member.
  • the inorganic material layer covers the entire surface of the anisotropic graphite.
  • the anisotropic graphite according to one embodiment of the present invention is formed by laminating many graphite layers.
  • the length of the side parallel to the X axis is preferably 4 mm or more and 200 mm or less, Further, it is more preferably 10 mm or more and 150 mm or less, and further preferably 20 mm or more and 100 mm or less.
  • the length of the side parallel to the Y axis is preferably 4 mm or more and 200 mm or less, more preferably 10 mm or more and 100 mm or less, and even more preferably 15 mm or more and 50 mm or less.
  • the length of the side parallel to the Z axis is preferably 0.6 mm or more and 5.0 mm or less, more preferably 1.0 mm or more and 3.5 mm or less, and 1.2 mm or more and 2.5 mm or less. Is more preferable.
  • a method for producing anisotropic graphite is not particularly limited, but anisotropic graphite can be produced by, for example, cutting a graphite block.
  • Examples of a method for cutting the graphite block include a method using a diamond cutter, a wire saw, machining, and the like.
  • a method using a wire saw is preferable from the viewpoint of easily processing into a rectangular parallelepiped shape.
  • the surface of the anisotropic graphite may be polished or roughened, and a known technique such as file polishing, buffing, and blasting may be appropriately used.
  • the graphite block is not particularly limited, and a polymer-decomposed graphite block, a pyrolytic graphite block, an extruded graphite block, a molded graphite block, or the like can be used. From the viewpoint of having a high thermal conductivity and excellent heat transfer performance of the anisotropic graphite heat transfer member, a polymer-decomposed graphite block and a pyrolyzed graphite block are preferred.
  • a method for producing the graphite block for example, there is a method in which a carbonaceous gas such as methane is introduced into a furnace and heated to about 2000 ° C. with a heater to form fine carbon nuclei. The formed carbon nuclei are deposited in layers on the substrate, whereby a pyrolytic graphite block can be obtained.
  • a carbonaceous gas such as methane
  • the graphite block may be manufactured by laminating a polymer film such as a polyimide resin in multiple layers, and then performing heat treatment while applying pressure.
  • a laminate in which a polymer film as a starting material is laminated in multiple layers is preliminarily reduced to a temperature of about 1000 ° C. under reduced pressure or in an inert gas. It is carbonized by heat treatment to form a carbonized block. Thereafter, the carbonized block is graphitized by heat-treating to a temperature of 2800 ° C. or higher while press-pressing in an inert gas atmosphere. Thereby, a good graphite crystal structure can be formed, and a graphite block having excellent thermal conductivity can be obtained.
  • the metal layer according to one embodiment of the present invention can be used for bonding anisotropic graphite and an inorganic material layer.
  • the type of the metal layer is not particularly limited, but it is preferable to use a metal layer containing plating and a metal brazing material. When plating is used, the metal layer and the inorganic material layer may be integrated.
  • the metal brazing material can be bonded to anisotropic graphite by diffusion, and the metal brazing material itself has a relatively high thermal conductivity. Sex can be maintained.
  • the type of the metal brazing material is not particularly limited, but preferably contains silver, copper, and titanium from the viewpoint of maintaining high thermal conductivity.
  • a known material and a known technique can be used.
  • bonding can be performed by heating in a vacuum environment of 1 ⁇ 10 ⁇ 3 Pa and a temperature range of 700 to 1000 ° C. for 10 minutes to 1 hour, and cooling this to room temperature. is there. Further, in order to improve the bonding state, a load may be applied at the time of heating.
  • the inorganic material layer is joined to the entire surface of the anisotropic graphite using a metal brazing material, it is preferable to use a hollow frame or a bottomed frame.
  • a hollow frame or a bottomed frame is used, the interface between inorganic material layers is reduced as compared with a case where an inorganic material layer is bonded to each surface of anisotropic graphite, so that heat can be efficiently diffused. .
  • Examples of the inorganic material layer according to one embodiment of the present invention include a metal layer or a ceramic layer, and a metal layer is preferable.
  • a metal layer In the direction perpendicular to the crystal orientation plane of anisotropic graphite, that is, in the Y-axis direction, heat is relatively difficult to be transmitted. Therefore, by combining with a material having a relatively high thermal conductivity and isotropic properties, the thermal conductivity in the Y-axis direction of anisotropic graphite can be supplemented, and a higher heat radiation effect can be exhibited. .
  • metal forming the metal layer known materials such as gold, silver, copper, nickel, aluminum, molybdenum, tungsten, and alloys containing these can be used as appropriate.
  • ⁇ ⁇ As the type of ceramics forming the ceramics layer, known materials such as alumina, zirconia, silicon carbide, silicon nitride, boron nitride, and aluminum nitride can be appropriately used.
  • the inorganic material layer is preferably a metal layer, and the metal forming the metal layer is preferably copper.
  • the thickness of the inorganic material layer is preferably 100 ⁇ m or more and 300 ⁇ m or less, more preferably 120 ⁇ m or more and 250 ⁇ m or less, and still more preferably 150 ⁇ m or more and 225 ⁇ m or less.
  • the thickness is 100 ⁇ m or more, (a1) the thermal conductivity of the direction in which the heat of the anisotropic graphite is relatively difficult to transmit can be supplemented. Further, if it is 300 ⁇ m or less, the high thermal conductivity of (a1) anisotropic graphite is not hindered.
  • Examples of the method for forming the inorganic material layer include plating, sputtering, and attaching a plate. From the viewpoint of heat conduction, a method of attaching a plate is preferable.
  • the metal of the metal layer may be partially impregnated between the graphite layers forming the anisotropic graphite. preferable. If there is a minute gap between the graphite layers, the gap may hinder the heat transfer performance of the heat diffusion member. Therefore, it is preferable that the metal layer is impregnated so as to fill minute gaps between the graphite layers.
  • the interlayer of the graphite layer forming the anisotropic graphite is expanded, and then the metal layer is impregnated. Is preferred.
  • polymer-decomposed graphite which is produced by laminating a polymer film such as a polyimide film in multiple layers and then thermally decomposing as anisotropic graphite. Since polymer-decomposed graphite is made by laminating polymer films in multiple layers, gaps are formed linearly between layers derived from polymer films, as compared to pyrolytic graphite made by CVD or other methods. Can be. Therefore, the metal brazing material can be easily impregnated.
  • the cooling member according to one embodiment of the present invention is not particularly limited as long as it is a member that cools the heat generated from the semiconductor element, and examples thereof include a heat sink and a heat pipe.
  • the heat sink examples include a heat sink having a plate-like fin, a sword-shaped or bellows-shaped heat sink. Above all, a heat sink having a plate-like fin is preferable. As a heat sink having plate-like fins, a heat sink having a plurality of fins on a metal flat heat-receiving plate can be used.
  • FIG. 1 shows a semiconductor package 1 having a heat sink as an example.
  • the semiconductor element 12, the heat diffusion member 11, and the heat sink 13 are arranged such that the plane of the plate-like fins, which are the heat transfer surfaces in the heat sink, is orthogonal to the crystal orientation plane of the anisotropic graphite constituting the heat diffusion member.
  • a member number 14 indicates a line indicating a crystal orientation plane of anisotropic graphite.
  • the heat pipe is not particularly limited as long as it can transfer heat by repeating the phase change of evaporation and condensation of the liquid in the closed vessel, and examples thereof include a rod shape, a column shape, and a rectangular parallelepiped shape. .
  • FIG. 2 shows a semiconductor package 2 including a heat pipe as an example.
  • the semiconductor element 22, the heat diffusion member 21, and the heat pipe 23 are arranged so that the heat transfer direction 24 of the heat pipe is orthogonal to the crystal orientation plane of anisotropic graphite constituting the heat diffusion member.
  • member number 25 indicates a line indicating the crystal orientation plane of anisotropic graphite.
  • the heat transfer direction or the heat transfer surface of the cooling member intersects the crystal orientation plane of the anisotropic graphite constituting the heat diffusion member.
  • the heat transfer direction refers to a direction from the high temperature part to the low temperature part in the cooling member, and in the case of the rod-shaped heat pipe shown in FIG.
  • the heat transfer surface refers to a surface parallel to the plate of the plate-like fin.
  • FIG. 4 is a plan view of the semiconductor package 4 including the semiconductor element 41, the heat diffusion member 42, and the heat pipe 43 in order to define the intersection angle between the heat diffusion member and the cooling member.
  • an angle 46 between a direction 44 parallel to the crystal orientation plane of anisotropic graphite and a heat transfer direction 45 of the heat pipe is defined as an intersection angle between the heat diffusion member and the cooling member.
  • the angle between the direction parallel to the plate fins and the direction parallel to the crystal orientation plane of anisotropic graphite in the plan view may be the intersection angle.
  • the intersection angle between the heat diffusion member and the cooling member is preferably 60 degrees or more and 120 degrees or less, more preferably 70 degrees or more and 110 degrees or less, further preferably 80 degrees or more and 100 degrees or less, and particularly preferably 85 degrees or more and 95 degrees or less. , 90 degrees are most preferred.
  • the semiconductor package according to one embodiment of the present invention preferably further includes an auxiliary cooling member.
  • the auxiliary cooling member includes a water-cooled member and an air-cooled member such as a fan.
  • FIG. 3 shows the semiconductor package 3 including the substrate 36, the substrate 35, the semiconductor element 32, the heat diffusion member 31, the heat sink 33, the auxiliary cooling member 34, and the like as an example.
  • the auxiliary cooling member 34 is a fan, as shown in FIG. 3, it is preferable to dispose the fan blades perpendicular to the plate-like fins which are the heat transfer surfaces of the heat sink 33. With this arrangement, the heat of each fin of the cooling member can be more efficiently transmitted to the auxiliary cooling member.
  • FIG. 5 shows, as an example, the semiconductor package 5 including the auxiliary cooling member 56 and three heat pipes arranged in parallel.
  • the semiconductor element 52, the heat diffusion member 51, and the heat pipe 53 are arranged such that the heat transfer direction 54 of the heat pipe is orthogonal to the crystal orientation plane of anisotropic graphite constituting the heat diffusion member.
  • a member number 55 indicates a line indicating a crystal orientation plane of anisotropic graphite.
  • the auxiliary cooling member 56 is disposed on the heat pipe 53.
  • a semiconductor package including (A) a semiconductor element, (B) a heat diffusion member, and (C) a cooling member, wherein (B) the heat diffusion member includes anisotropic graphite, and a crystal of the anisotropic graphite.
  • the cooling member is a heat pipe, and the heat transfer direction of the heat pipe intersects the crystal orientation plane of the anisotropic graphite, and the intersection angle is 80 degrees or more and 100 degrees or less.
  • the cooling member is a heat pipe, and a heat transfer direction of the heat pipe intersects a crystal orientation plane of the anisotropic graphite, and an intersection angle is 85 degrees or more and 95 degrees or less.
  • the cooling member is a heat sink, and the plane of the fins constituting the heat sink intersects the crystal orientation plane of the anisotropic graphite, and the intersection angle is 80 degrees or more and 100 degrees or less.
  • the cooling member is a heat sink, and the surface of the fin constituting the heat sink intersects the crystal orientation plane of the anisotropic graphite, and the intersection angle is 85 degrees or more and 95 degrees or less.
  • a graphite block was produced by the method described in Production Example 1, and a heat diffusion member was produced by the method described in Production Example 2. As shown in Examples 1 and 2 and Comparative Examples 1 to 4, semiconductor packages were manufactured, and the heat transfer performance was evaluated.
  • the obtained graphite block had a thermal conductivity of 1500 W / mK in a direction parallel to the crystal orientation plane and a thermal conductivity of 5 W / mK perpendicular to the crystal orientation plane.
  • a titanium-based active silver solder of 40 mm ⁇ 40 mm ⁇ 50 ⁇ m is laminated as a metal layer on the upper and lower surfaces of the anisotropic graphite in which the crystal orientation plane of the anisotropic graphite is arranged parallel to the XZ plane as described above.
  • oxygen-free copper of 40 mm ⁇ 40 mm ⁇ 200 ⁇ m in thickness was laminated as an inorganic material layer.
  • the anisotropic graphite was heated at 850 ° C. for 30 minutes in a vacuum environment of 1 ⁇ 10 ⁇ 3 Pa under a load of 100 kg / m 2 from above and below.
  • a heat diffusion member (B1) having a side parallel to the X-axis 40 mm, a side parallel to the Y-axis 40 mm, and a side parallel to the Z-axis 1.5 mm. Obtained.
  • Example 1 The semiconductor element, the heat diffusion member (B1) obtained in Production Example 2, and the aluminum heat sink are arranged in this order such that the crystal orientation plane of the anisotropic graphite of the heat diffusion member and the plate-like fin of the heat sink are orthogonal to each other. Then, the semiconductor package (P1) was obtained by soldering.
  • Example 2 The semiconductor element, the heat diffusion member (B1) obtained in Production Example 2, and the aluminum heat sink are sequentially connected to the anisotropic graphite crystal orientation plane of the heat diffusion member and the plate-like fin of the heat sink at 80 degrees. And joined by solder to obtain a semiconductor package (P2).
  • the maximum temperature of the semiconductor element was 66.1 ° C.
  • Example 3 The semiconductor element, the heat diffusion member (B1) obtained in Production Example 2, and the aluminum heat sink are sequentially placed in this order.
  • the anisotropic graphite crystal orientation plane of the heat diffusion member and the plate-like fin of the heat sink intersect at 60 degrees. And joined by solder to obtain a semiconductor package (P3).
  • the maximum temperature of the semiconductor element was 66.9 ° C.
  • the maximum temperature of the semiconductor element was 69.7 ° C.
  • Example 4 The semiconductor element, the heat diffusion member (B1) obtained in Production Example 2, and the three heat pipes arranged in parallel, in this order, the crystal orientation plane of anisotropic graphite of the heat diffusion member and the heat transfer of the heat pipe.
  • the semiconductor package (P6) was obtained by arranging them so that their directions were orthogonal to each other and joining them with solder.
  • the maximum temperature of the semiconductor element was 43.9 ° C.
  • the maximum temperature of the semiconductor element was 62.7 ° C.
  • Example 1 to 3 and Comparative Examples 1 and 2 a substrate made of glass epoxy, the above-described semiconductor package (semiconductor element, heat diffusion member, aluminum heat sink) and a fan were joined by solder as shown in FIG.
  • Example 4 and Comparative Examples 3 and 4 the above-described semiconductor package (semiconductor element, heat diffusion member, heat pipe) and a fan were joined by solder as shown in FIG.
  • the maximum air temperature of the semiconductor element was measured by setting the air flow rate of the fan to 2 m 3 / min, the heat value of the semiconductor element to 60 W, and the outside air temperature to 25 ° C.
  • Tables 1 and 2 below summarize the configurations and evaluation results of the semiconductor packages of the examples and the comparative examples.
  • the semiconductor package of the present invention can be suitably used as a semiconductor package having high cooling efficiency.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

L'invention concerne un boîtier de semi-conducteur qui présente une excellente efficacité de refroidissement, la température d'un élément semi-conducteur étant maintenue basse par le transfert efficace de la chaleur générée de l'élément semi-conducteur vers un élément de refroidissement. Les présents inventeurs peuvent fournir un boîtier de semi-conducteur qui présente une excellente efficacité de refroidissement, en fournissant une construction dans laquelle une face d'une couche de graphite formant du graphite anisotrope croise la direction de la face présentant la dissipation de chaleur la plus élevée dans un élément de refroidissement.
PCT/JP2019/035755 2018-09-20 2019-09-11 Boîtier de semi-conducteur WO2020059605A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-176640 2018-09-20
JP2018176640A JP2022003656A (ja) 2018-09-20 2018-09-20 半導体パッケージ

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WO2020059605A1 true WO2020059605A1 (fr) 2020-03-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11725796B2 (en) 2021-06-30 2023-08-15 Nichia Corporation Light-emitting module, vehicle lamp, and heat dissipation member

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024085051A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur
WO2024085050A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur

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Publication number Priority date Publication date Assignee Title
JP2004200586A (ja) * 2002-12-20 2004-07-15 Sony Corp 冷却装置および冷却装置を有する電子機器
JP2006196593A (ja) * 2005-01-12 2006-07-27 Sumitomo Electric Ind Ltd 半導体装置およびヒートシンク
JP2011159662A (ja) * 2010-01-29 2011-08-18 Toyota Central R&D Labs Inc 半導体装置
JP2012028520A (ja) * 2010-07-22 2012-02-09 Denso Corp 半導体冷却装置
JP2016026391A (ja) * 2009-07-14 2016-02-12 スペシャルティ ミネラルズ （ミシガン） インコーポレーテツド 異方性熱伝導要素およびその製造方法
JP2017034046A (ja) * 2015-07-31 2017-02-09 古河電気工業株式会社 ヒートシンク

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Publication number Priority date Publication date Assignee Title
JP2004200586A (ja) * 2002-12-20 2004-07-15 Sony Corp 冷却装置および冷却装置を有する電子機器
JP2006196593A (ja) * 2005-01-12 2006-07-27 Sumitomo Electric Ind Ltd 半導体装置およびヒートシンク
JP2016026391A (ja) * 2009-07-14 2016-02-12 スペシャルティ ミネラルズ （ミシガン） インコーポレーテツド 異方性熱伝導要素およびその製造方法
JP2011159662A (ja) * 2010-01-29 2011-08-18 Toyota Central R&D Labs Inc 半導体装置
JP2012028520A (ja) * 2010-07-22 2012-02-09 Denso Corp 半導体冷却装置
JP2017034046A (ja) * 2015-07-31 2017-02-09 古河電気工業株式会社 ヒートシンク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11725796B2 (en) 2021-06-30 2023-08-15 Nichia Corporation Light-emitting module, vehicle lamp, and heat dissipation member

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