WO2019216003A1 - スパッタリング方法 - Google Patents
スパッタリング方法 Download PDFInfo
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- WO2019216003A1 WO2019216003A1 PCT/JP2019/007527 JP2019007527W WO2019216003A1 WO 2019216003 A1 WO2019216003 A1 WO 2019216003A1 JP 2019007527 W JP2019007527 W JP 2019007527W WO 2019216003 A1 WO2019216003 A1 WO 2019216003A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Definitions
- the present invention relates to a sputtering method, and more particularly to a technique suitable for use in reactive sputtering for forming a compound film on a large substrate.
- Flat panel displays such as liquid crystal displays and organic EL displays include a plurality of thin film transistors that drive display elements.
- the thin film transistor has a channel layer, and a material for forming the channel layer is an oxide semiconductor such as indium gallium zinc oxide (IGZO).
- IGZO indium gallium zinc oxide
- the present invention is performed so as to suppress the variation in the characteristics of the compound film. Applicants have used a sputtering apparatus that is scanned by a target.
- the film thickness increases, and when the cathode is high speed, the film thickness decreases. Accordingly, the film thickness may be thicker near the substrate edge than near the center of the substrate, but there has been a demand to improve the increase in film thickness near the substrate edge.
- the present invention has been made in view of the above circumstances, and intends to achieve the following object. 1. Reduce variations in film formation characteristics. 2. Improve film thickness uniformity. 3. In particular, variations in film formation characteristics at the edge of the substrate are improved.
- the sputtering method of the present invention is a sputtering method using a reactive sputtering apparatus.
- the reactive sputtering apparatus includes a cathode device that emits sputtered particles toward a formation region of a compound film to be formed on a film formation target, a space facing the formation region is a facing region, and the cathode device A scanning unit that scans an erosion region in the facing region, and a target in which the erosion region is formed and whose length in the scanning direction is shorter than that of the facing region, and the scanning unit includes the scanning unit in the scanning direction.
- the middle point of the surface of the target in the scanning direction is outside the forming region in the scanning direction with respect to the first end where the sputtered particles first reach among the two ends of the forming region. From the position, the midpoint of the surface of the target in the scanning direction with respect to the other second end of the two ends of the formation region in the scanning direction In the scanning direction to the end position is outside of the forming area, it scans the erosion region toward the opposite area.
- the position where the second scanning speed is accelerated from the first scanning speed is set to the inside of the formation region from the first end, and the position is decelerated from the second scanning speed.
- the position at which the first scanning speed is accelerated from the start position is outside the formation region with respect to the first end, and the speed is decelerated from the first scanning speed to the end position.
- the position to be made can be outside the formation region rather than the second end.
- the position at which the first scanning speed is accelerated from the start position is set to the inside of the formation region with respect to the first end, and the speed is decelerated from the first scanning speed to the end position.
- the position to be made can be set inside the formation region rather than the second end portion.
- the speed of the target in the scanning unit is controlled to be symmetric or asymmetric with respect to the center of the formation region in the scanning direction.
- a ratio of the first scanning speed to the second scanning speed can be set in a range of 0.70 to 0.95.
- the sputtering method of the present invention is a sputtering method using a reactive sputtering apparatus, and the reactive sputtering apparatus includes a cathode device that emits sputtered particles toward a formation region of a compound film to be formed on a film formation target.
- a space facing the forming region is a facing region
- the cathode device includes a scanning unit that scans the erosion region in the facing region, and the erosion region is formed, and the length in the scanning direction is longer than the facing region.
- a short target, and the scanning unit has a first target part to which the sputtered particles first reach among the two end parts of the formation region in the scanning direction.
- the substrate center portion at the substrate end in the scanning direction corresponding to the end portion of the formation region Compared to reduce the film thickness becomes thick, the variation it is possible to prevent the occurrence in film properties.
- the position at which the first scanning speed is accelerated from the start position is outside the formation region with respect to the first end, and the speed is decelerated from the first scanning speed to the end position.
- the film thickness is thicker at the substrate end portion in the scanning direction corresponding to the end portion of the formation region than at the center portion of the substrate. It is possible to prevent the occurrence of variations in film characteristics.
- the position at which the first scanning speed is accelerated from the start position is set to the inside of the formation region with respect to the first end, and the speed is decelerated from the first scanning speed to the end position.
- the film thickness becomes thicker at the substrate end portion in the scanning direction corresponding to the end portion of the formation region than at the center portion of the substrate. It is possible to prevent the occurrence of variations in film characteristics.
- the substrate in the scanning direction corresponding to the formation region is controlled by controlling the speed of the target in the scanning unit to be symmetric or asymmetric with respect to the center of the formation region in the scanning direction.
- the ratio of the first scanning speed to the second scanning speed is set in a range of 0.70 to 0.95, so that the ratio of the first scanning speed to the center of the substrate in the scanning direction corresponding to the formation region is smaller. It can prevent that the film thickness in a part becomes large.
- the distance from the start position in the scanning direction to the position where the second scanning speed is reached is set in the range of 200 to 400 mm, so that the substrate in the scanning direction corresponding to the formation region
- the film thickness can be made uniform and the film thickness variation can be reduced.
- a distance from the start position to the position where the second scanning speed is reached is The ratio of the distance between the first end of the formation region and the start position is set to a range of 1.3 to 2.7, whereby film formation is performed on the substrate in the scanning direction corresponding to the formation region. It is possible to make the thickness uniform and reduce the variation in film thickness.
- the present invention it is possible to suppress the variation in film formation characteristics, improve the film thickness uniformity, and improve the film formation characteristic variation at the edge of the substrate.
- FIG. 1 is a configuration diagram showing the overall configuration of a sputtering apparatus (reactive sputtering apparatus) in the sputtering method of the present embodiment.
- FIG. 2 is a configuration diagram schematically showing the configuration of the sputtering chamber in the present embodiment.
- FIG. 3 is a configuration diagram schematically showing the configuration of the cathode unit in the present embodiment. 4 and 6 to 8 are views for explaining the action of sputtering in the present embodiment.
- reference numeral 10 denotes a sputtering apparatus.
- the compound film formed on the substrate is an indium gallium zinc oxide film (IGZO film)
- IGZO film indium gallium zinc oxide film
- a carry-in / out chamber 11, a pretreatment chamber 12, and a sputtering chamber 13 are arranged along a conveyance direction which is one direction.
- Each of the three chambers is connected to another chamber adjacent to each other by a gate valve 14.
- Each of the three chambers is connected to an exhaust unit 15 that exhausts gas or the like in the chamber, and each of the three chambers is individually decompressed by driving the exhaust unit 15.
- On the bottom surface of each of the three chambers a film formation lane 16 and a recovery lane 17 that are two lanes extending in parallel with each other in the transport direction are laid.
- the film formation lane 16 and the recovery lane 17 are composed of, for example, a rail extending along the transport direction, a plurality of rollers arranged along the transport direction, and a plurality of motors that rotate each of the plurality of rollers.
- the film formation lane 16 conveys the tray T carried into the sputtering apparatus 10 from the carry-in / out chamber 11 toward the sputter chamber 13.
- the recovery lane 17 conveys the tray T carried into the sputter chamber 13 from the sputter chamber 13 toward the carry-in / out chamber 11.
- a rectangular substrate S extending toward the front of the paper surface is fixed to the tray T in a standing state.
- the width of the substrate S is, for example, 2200 mm along the transport direction and 2500 mm toward the front of the page.
- the carry-in / out chamber 11 conveys the substrate S before film formation, which is carried in from the outside of the sputtering apparatus 10, to the pretreatment chamber 12, and transfers the substrate S after film formation, which is carried in from the pretreatment chamber 12, to the outside of the sputtering apparatus 10. To be taken out.
- the carry-in / out chamber 11 is brought to atmospheric pressure. Boost the pressure.
- the carry-in / out chamber 11 Decompresses the interior to the same extent as the interior of the pretreatment chamber 12.
- the pretreatment chamber 12 performs, for example, a heat treatment or a cleaning treatment on the substrate S before film formation carried into the pretreatment chamber 12 from the carry-in / out chamber 11 as a treatment required for film formation.
- the pretreatment chamber 12 carries the substrate S carried out from the carry-in / out chamber 11 to the pretreatment chamber 12 into the sputtering chamber 13.
- the pretreatment chamber 12 carries the substrate S carried out from the sputtering chamber 13 to the pretreatment chamber 12 to the carry-in / out chamber 11.
- the sputter chamber 13 includes a cathode device 18 that emits sputtered particles toward the substrate S, and a lane changing unit 19 disposed between the film formation lane 16 and the recovery lane 17.
- the sputtering chamber 13 forms an IGZO film on the substrate S before film formation carried into the sputtering chamber 13 from the pretreatment chamber 12 using the cathode device 18.
- the sputtering chamber 13 moves the tray T after film formation from the film formation lane 16 to the recovery lane 17 using the lane changing unit 19.
- the film formation lane 16 of the sputter chamber 13 transports the substrate S carried from the pretreatment chamber 12 to the sputter chamber 13 along the transport direction, and the formation of a thin film on the substrate S is started. Until the process is finished, the position of the tray T is fixed in the middle of the film formation lane 16. When the position of the tray T is fixed by the support member that supports the tray T, the position of the edge of the substrate S in the transport direction is also fixed.
- the gas supply unit 21 of the sputtering chamber 13 supplies a gas used for sputtering into the gap between the tray T and the cathode device 18.
- the gas supplied from the gas supply unit 21 includes a sputtering gas such as argon gas and a reaction gas such as oxygen gas.
- the cathode device 18 has one cathode unit 22, and the cathode unit 22 is arranged along a plane facing the surface Sa of the substrate S.
- the target 23, the backing plate 24, and the magnetic circuit 25 are arranged in this order from a position close to the substrate S.
- the target 23 is formed in a flat plate shape along a plane facing the substrate S, has a width longer than that of the substrate S in the height direction which is a direction orthogonal to the paper surface, and is smaller than the substrate S in the transport direction. It has a width, for example, about one fifth.
- the main component is IGZO.
- 95% by mass of the forming material of the target 23 is IGZO, and preferably 99% by mass or more is IGZO.
- the backing plate 24 is formed in a flat plate shape along a plane facing the substrate S, and is bonded to a surface that does not face the substrate S by the target 23.
- a DC power source 26D is connected to the backing plate 24. The DC power supplied from the DC power supply 26 ⁇ / b> D is supplied to the target 23 through the backing plate 24.
- the magnetic circuit 25 is composed of a plurality of magnetic bodies having different magnetic poles, and forms a magnetron magnetic field on the surface 23a of the target 23 and on the side surface of the target 23 facing the substrate S.
- the direction along the normal to the surface 23a of the target 23 is the normal direction
- the density of the plasma generated in the gap between the surface 23a of the target 23 and the surface Sa of the substrate S is formed by the magnetic circuit 25. It becomes the highest in the part where the magnetic field component along the normal direction is 0 (B ⁇ 0) in the magnetron magnetic field.
- the region where the magnetic field component along the normal direction is zero is a region having a high plasma density.
- the cathode device 18 includes a scanning unit 27 that moves the cathode unit 22 along one scanning direction.
- the scanning direction is a direction parallel to the transport direction.
- the scanning unit 27 includes, for example, a rail extending along the scanning direction, a roller attached to each of two end portions of the cathode unit 22 in the height direction, and a plurality of motors that rotate each of the rollers.
- the rail of the scanning unit 27 has a width longer than that of the substrate S in the scanning direction.
- the scanning unit 27 may be embodied as another configuration as long as the cathode unit 22 can be moved along the scanning direction.
- the scanning unit 27 scans the cathode unit 22 in the facing region R2, which is a space facing the formation region R1 of the IGZO film, by moving the cathode unit 22 along the scanning direction.
- the entire surface Sa of the substrate S which is an example of a film formation target, is an example of an IGZO film formation region R1.
- the scanning unit 27 is, for example, the other end in the scanning direction from the start position St that is one end in the scanning direction in the scanning unit 27.
- the cathode unit 22 is moved along the scanning direction toward the end position En. Thereby, the scanning unit 27 scans the target 23 of the cathode unit 22 in the facing region R2 facing the forming region R1.
- the direction in which the formation region R1 and the facing region R2 face each other is the facing direction.
- the distance between the surface Sa of the substrate S and the surface 23a of the target 23 is 300 mm or less, for example, 150 mm.
- the cathode unit 22 When the cathode unit 22 is disposed at the start position St, of the two ends of the formation region R1 in the scanning direction, the first end Re1 where the sputtered particles first reach and the first end in the scanning direction
- the distance D1 along the scanning direction between the first end 23e1 of the target 23 close to Re1 is 150 mm or more.
- the distance D2 between the midpoint 23e3 (center position) of the target 23 and the first end Re1 in the scanning direction is 100 mm to 300 mm.
- the cathode unit 22 When the cathode unit 22 is located at the end position En, of the two ends of the formation region R1 in the scanning direction, the second end Re2 where the sputtered particles reach later and the second end Re2 in the scanning direction.
- the distance D1 along the scanning direction between the second end 23e2 of the target 23 close to the distance is 150 mm or more.
- the distance D2 between the middle point 23e3 (center position) of the target 23 and the second end Re2 in the scanning direction is 100 mm to 300 mm.
- the distance D1 and the distance D2 are symmetric with respect to the center of the substrate S in the scanning direction, that is, the distances D1 and D2 can be set to be equal.
- the scanning unit 27 may scan the cathode unit 22 once from the start position St toward the end position En along the scanning direction. Alternatively, the scanning unit 27 may scan the cathode unit 22 from the start position St toward the end position En along the scanning direction, and then scan from the end position En toward the start position St along the scanning direction. . Accordingly, the scanning unit 27 scans the cathode unit 22 twice along the scanning direction. The scanning unit 27 scans the cathode unit 22 a plurality of times between the start position St and the end position En by alternately moving the cathode unit 22 to the start position St and the end position En along the scanning direction. Also good.
- the number of times the scanning unit 27 scans the cathode unit 22 is changed according to the thickness of the IGZO film. If the conditions other than the number of scans of the cathode unit 22 are the same, the number of times the scanning unit 27 scans the cathode unit 22 is set to a larger value as the thickness of the IGZO film is larger.
- FIG. 3 shows a state in which the cathode unit 22 is arranged at the start position St described in FIG.
- the plane on which the surface Sa of the substrate S is arranged is the virtual plane Pid, and the straight line orthogonal to the virtual plane Pid is the normal line Lv.
- a surface 23a which is a side surface facing the substrate S at the target 23 is disposed on one plane parallel to the virtual plane Pid.
- the magnetic circuit 25 that forms the magnetron magnetic field B on the surface 23 a of the target 23 forms two vertical magnetic field zero regions whose magnetic field components along the normal Lv are 0 (B ⁇ 0) on the surface 23 a of the target 23. .
- the sputtered particles SP are emitted mainly from the two vertical magnetic field zero regions.
- the vertical magnetic field zero region close to the first end Re1 of the formation region R1 in the scanning direction is the first erosion region E1
- the vertical magnetic field zero region far from the first end Re1 is the second. This is the erosion region E2.
- the magnetic circuit 25 has a width substantially equal to the target 23 in the height direction orthogonal to the paper surface, and has a width of about one third of the target 23 in the scanning direction, for example.
- the cathode unit 22 includes two shielding plates 28a and 28b that prevent a part of the plurality of sputtered particles SP emitted from the first erosion region E1 and the second erosion region E2 from reaching the substrate S.
- the two shielding plates 28a and 28b have a width substantially equal to the target 23 in the height direction, and protrude from the surface 23a of the target 23 toward the virtual plane Pid in the width direction orthogonal to the scanning direction.
- the first shielding plate 28a and the second shielding plate 28b have the same protruding width in the width direction.
- the 1st shielding board 28a is an example of a 1st shielding part
- the 2nd shielding board 28b is an example of a 2nd shielding part.
- the first shielding plate 28a which is one shielding plate, includes a first end Re1 where the sputtered particles SP in the formation region R1 first reach in the scanning direction when the cathode unit 22 is disposed at the start position St. It arrange
- the second shielding plate 28b which is the other shielding plate is a second shielding plate which is the end of the target 23 far from the first end Re1 of the formation region R1 in the scanning direction when the cathode unit 22 is located at the start position St. It arrange
- the cathode unit 22 includes a magnetic circuit scanning unit 29 that changes the position of the magnetic circuit 25 with respect to the target 23.
- the magnetic circuit scanning unit 29 includes, for example, a rail extending along the scanning direction, a roller attached to each of two end portions in the height direction of the magnetic circuit 25, and a plurality of motors that rotate each of the rollers. Composed.
- the rail of the magnetic circuit scanning unit 29 has a width substantially equal to the target 23 in the scanning direction.
- the magnetic circuit scanning unit 29 may be embodied as another configuration as long as the magnetic circuit 25 can be moved along the scanning direction.
- the magnetic circuit scanning unit 29 includes a first position P1 where the first end 23e1 of the target 23 and the magnetic circuit 25 overlap, and a second position where the second end 23e2 of the target 23 and the magnetic circuit 25 overlap.
- the magnetic circuit 25 is scanned between the position P2.
- the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 toward the second position P2 when the cathode device 18 releases the sputtered particles SP and starts forming the IGZO film.
- the scanning unit 27 moves the cathode unit 22 from the start position St toward the end position En, for example, the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 toward the second position P2.
- the magnetic circuit scanning unit 29 moves the magnetic circuit 25 in the direction opposite to the moving direction of the cathode unit 22 along the scanning direction.
- the scanning unit 27 scans the cathode unit 22 from the start position St toward the end position En and passes the counter region R2 once through the target 23, the magnetic circuit scanning unit 29 moves the magnetic circuit 25 to the first position P1. It is preferable to scan once from the second to the second position P2.
- the magnetic circuit 25 moves between the first position P1 and the second position P2 a plurality of times, the magnetic circuit 25 with respect to the scanning direction of the target 23 Each time the scanning direction changes, the relative speed of the magnetic circuit 25 with respect to the target 23 changes.
- the relative speed of the magnetic circuit 25 changes, the state of the plasma formed on the surface of the target 23 also changes, so the number of sputtered particles SP emitted toward the formation region R1 also changes.
- the thickness of the IGZO film varies in the scanning direction of the target 23.
- the magnetic circuit scanning unit 29 scans the magnetic circuit 25 once from the first position P1 to the second position P2, thereby scanning direction. In this case, variation in the thickness of the IGZO film can be suppressed.
- the magnetic circuit scanning unit 29 moves the magnetic circuit 25 along the scanning direction
- the vertical magnetic field zero region formed by the magnetic circuit 25 also moves along the scanning direction. Therefore, the first erosion region E1 and the second erosion region E2 also move on the surface 23a of the target 23 along the scanning direction.
- the scanning unit 27 scans the cathode unit 22 in the facing region R2 along the scanning direction
- the scanning unit 27 also scans the first erosion region E1 and the second erosion region E2 in the facing region R2.
- the cathode unit 22 When the cathode device 18 starts releasing the sputtered particles SP toward the IGZO film formation region R1, as shown in FIG. 4, the cathode unit 22 is disposed at the start position St. At this time, of the two end portions of the formation region R1 in the scanning direction, the first end portion Re1 where the sputtered particles SP reach first and the two end portions of the target 23 in the scanning direction are close to the formation region R1.
- the distance D1 between the first end 23e1 is 150 mm or more. Therefore, most of the sputtered particles SP emitted from the target 23 when the direct current power is supplied to the target 23 hardly reach the substrate S.
- the cathode device 18 starts releasing the sputtered particles SP toward the IGZO film formation region R1
- the middle point 23e3 (center position) of the target 23 in the scanning direction is the first end portion Re1 in the scanning direction. Acceleration is started from the start position St that is set to the outside.
- the sputtered particles SP released from the target 23 when DC power is supplied are compared to the sputtered particles SP released from the target 23 at a predetermined time when DC power is continuously supplied.
- the energy of the sputtered particles SP, the active species of oxygen, and the reaction probability are different.
- an IGZO film having a film quality different from that formed by the sputtered particles SP that have reached the substrate S is formed thereafter.
- the film composition varies in the molecular layer at the initial stage of formation of the IGZO film.
- the middle point 23e3 (center position) of the target 23 starts acceleration from the start position St that is outside the first end Re1 in the scanning direction, in the molecular layer at the initial stage of formation of the IGZO film, It is possible to prevent the film thickness from becoming unnecessarily thick and to suppress variations in the film composition. Further, since the distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 is 150 mm or more in the scanning direction, the molecular layer in the initial stage of formation of the IGZO film It is possible to suppress the variation of the composition.
- the scanning speed at which the cathode unit 22 moves along the scanning direction is set as follows.
- FIG. 5 is a graph showing the relationship between the scanning direction distance and the scanning speed in the present embodiment.
- the cathode unit 22 accelerates until the midpoint 23e3 (center position) of the target 23 reaches the first acceleration position AP1 from the start position St.
- One scanning speed V1 is set.
- the target 23 moves at a constant speed at the first scanning speed V1 until the midpoint 23e3 (center position) reaches the second acceleration position AP2 from the first acceleration position AP1.
- the target 23 is accelerated to the second scanning speed V2.
- the middle point 23e3 (center position) of the target 23 moves at the second scanning speed V2 at a constant speed until it reaches the second deceleration position BP2 from the second acceleration position AP2.
- the speed is reduced to the first scanning speed V1.
- the target 23 moves at a constant speed at the first scanning speed V1 until the middle point 23e3 (center position) reaches the first deceleration position BP1 from the second deceleration position BP2.
- the target 23 is decelerated and stopped until the midpoint 23e3 (center position) of the target 23 reaches the end position En from the first deceleration position BP1, and the scanning ends.
- the first acceleration position AP1 can be set as a position outside the first end Re1 in the scanning direction as shown in FIG.
- the first scanning speed V1 can be appropriately set with respect to the required film thickness of the IGZO film at the edge of the substrate S.
- the first scanning speed V1 can be set in a range of 0.70 to 0.95 with respect to the second scanning speed V2.
- the speed of the cathode unit 22 is set to be constant at the first scanning speed V1. Further, the speed of the cathode unit 22 is set to be equal acceleration from the start position St to the first acceleration position AP1.
- the second acceleration position AP2 can be set between an outer position of the first end Re1 in the scanning direction and an inner position of the first end Re1 in the scanning direction.
- the second acceleration position AP2 can be set in a range of 200 to 400 mm from the midpoint 23e3 (center position) of the target 23 at the start position St.
- the distance from the middle point 23e3 (center position) of the target 23 at the start position St to the second acceleration position AP2 is close to the first end Re1 of the formation region R1 and the first end Re1 at the start position St.
- the ratio with respect to the distance from the first end 23e1 can be set in a range of 1.3 to 2.7 (200/150 to 400/150).
- the second scanning speed V2 increases, the film thickness to be formed decreases, and when the second scanning speed V2 decreases, the film thickness of the IGZO film to be formed increases. Therefore, the second scanning speed V2 can be appropriately set with respect to the required film thickness of the IGZO film in the substrate S. From the second acceleration position AP2 to the second deceleration position BP2, the speed of the cathode unit 22 is set to be constant at the second scanning speed V2.
- the second deceleration position BP2 can be set between an outer position of the second end Re2 in the scanning direction and an inner position of the second end Re2 in the scanning direction.
- the second deceleration position BP2 can be set as a position symmetrical to the center of the substrate S in the scanning direction with respect to the second acceleration position AP2.
- the first deceleration position BP1 can be set as a position outside the second end Re2 in the scanning direction, as shown in FIG.
- the first deceleration position BP1 can be set as a position symmetrical to the center of the substrate S in the scanning direction with respect to the first acceleration position AP1.
- the speed of the cathode unit 22 is set to be constant at the first scanning speed V1.
- start position St and the end position En can be set as positions symmetrical to the center of the substrate S in the scanning direction. From the first deceleration position BP1 to the end position En, the speed of the cathode unit 22 is set to be equal deceleration (equal acceleration).
- the angle formed by the plane along the flight path F of the sputtered particles SP emitted from each erosion region that is the zero vertical magnetic field region and the virtual plane Pid, that is, the surface Sa of the substrate S, is the incident angle ⁇ of the sputtered particles. It is.
- Each of the shielding plates 28a and 28b has the surface Sa of the substrate S that is the formation region R1 of the plurality of sputtered particles SP emitted from the erosion regions E1 and E2 and the incident angle ⁇ is included in a predetermined range. Do not reach.
- the first shielding plate 28a and the second shielding plate 28b have the same configuration related to the limitation of the sputtered particles SP that reach the substrate S, although the positions of the first shielding plate 28a and the second shielding plate 28b are different from each other. Therefore, below, the 1st shielding board 28a is demonstrated in detail and description of the 2nd shielding board 28b is abbreviate
- the distance between the first erosion region E1 and the first shielding plate 28a in the scanning direction is the smallest. Therefore, among the plurality of sputtered particles SP emitted from the first erosion region E1 in the direction toward the cathode unit 22, the range of the incident angle ⁇ 1 of the sputtered particles SP that collide with the first shielding plate 28a is the largest. Of the plurality of sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22, the first shielding plate 28a does not allow the sputtered particles SP having an incident angle ⁇ 1 of, for example, 60 ° or less to reach the substrate S. .
- the distance between the first erosion region E1 and the first shielding plate 28a in the scanning direction is the largest. Therefore, among the plurality of sputtered particles SP emitted from the first erosion region E1 toward the cathode unit 22, the range of the incident angle ⁇ 2 of the sputtered particles SP that collide with the first shielding plate 28a is the smallest.
- the first shielding plate 28a prevents the sputtered particles SP having an incident angle ⁇ 2 of 30 ° or less from reaching the substrate S among the plurality of sputtered particles SP emitted from the first erosion region E1 toward the cathode unit 22.
- the first shielding plate 28a has an incident angle ⁇ of 30 ° or less regardless of the position of the magnetic circuit 25 in the scanning direction among the sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22.
- the sputtered particles SP are not allowed to reach the substrate S.
- a plurality of sputtered particles SP emitted toward the cathode unit 22 are directed to the second erosion region E2 adjacent to the first erosion region E1.
- the flight path F does not pass through the region of B ⁇ 0 extending along the height direction from the other erosion region toward the space where the sputtered particles fly. Therefore, the probability that the sputtered particles SP react with the active species of oxygen contained in the plasma is reduced, and the IGZO film composed of the sputtered particles SP reduces the unit thickness and the density of oxygen per unit area.
- the composition of the film varies in the plane of the IGZO film.
- the smaller the incident angle ⁇ of the sputtered particles SP the longer the flight distance from the point where the sputtered particles SP reach the substrate S after exceeding the B ⁇ 0 region, which is the region where the plasma density is high. Therefore, the number of times that the sputtered particles SP collide with particles other than the active species such as the sputter gas in the space beyond the region of B ⁇ 0, which is a region with high plasma density.
- the energy of the sputtered particles SP constituting the IGZO film varies, the film density varies in the formed IGZO film.
- the sputtered particles SP having a smaller incident angle ⁇ are included in the IGZO film, the film characteristics of the compound film vary.
- the first shielding plate 28a does not allow the sputtered particles SP having an incident angle ⁇ of 30 ° or less to reach the substrate S, it is difficult to form an IGZO film having a small amount of oxygen and a low film density. As a result, variations in composition and film density in the unit thickness and unit area of the IGZO film can be suppressed.
- the second shielding plate 28b is emitted from the second erosion region E2 in the direction toward the cathode unit 22.
- sputtered particles SP having an incident angle ⁇ of 30 ° or less are prevented from reaching the substrate S. Therefore, variations in composition and film density in unit thickness and unit area of the IGZO film can be suppressed.
- the magnetic circuit 25 is in the first position P1. Placed in. At this time, of the two end portions of the formation region R1 in the scanning direction, the first end portion Re1 where the sputtered particles SP reach first and the two end portions of the target 23 in the scanning direction are close to the formation region R1.
- the distance D1 between the first end 23e1 is 150 mm or more. Therefore, most of the sputtered particles SP emitted from the target 23 when DC power is supplied to the target 23 hardly reaches the substrate S regardless of the incident angle ⁇ of the sputtered particles SP.
- the sputtered particles SP emitted from the target 23 and reaching the substrate S are limited to sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a. .
- the first erosion region E1 has a smaller distance from the formation region R1 than the second erosion region E2, the sputtered particles SP that first reach each part of the substrate S are emitted from the first erosion region E1.
- the sputtered particles SP are sputtered particles SP. Therefore, there is a high probability that the initial layer of the IGZO film is sputtered particles SP that are emitted in the direction from the first erosion region E1 toward the cathode unit 22 and the incident angle ⁇ is larger than 30 °. Therefore, variation in the film composition in the initial layer of the IGZO film can be suppressed.
- the magnetic circuit scanning unit 29 places the magnetic circuit 25 at the first position P1. Therefore, compared with the case where the magnetic circuit 25 is disposed at another position between the first position P1 and the second position P2, the first erosion region E1 formed by the magnetic circuit 25, the first shielding plate 28a, The distance in the scanning direction between is the smallest. Therefore, the range of the incident angle ⁇ of the sputtered particles SP that collides with the first shielding plate 28a becomes the largest, and the magnetic circuit 25 is disposed at another position in the vicinity of the first end Re1 of the formation region R1. Compared to the case, sputtered particles SP having a larger incident angle ⁇ arrive. As a result, variation in composition in the IGZO film is further suppressed.
- the sputtered particles SP that are emitted from the first erosion region E1 and reach the substrate S following the sputtered particles SP that first reach the substrate S are also limited to the sputtered particles SP having an incident angle ⁇ larger than 30 °. It is done.
- the IGZO film is formed only by the sputtered particles SP with the incident angle ⁇ limited, variations in composition in unit thickness and unit area can be suppressed over the entire thickness direction of the IGZO film.
- the cathode unit 22 when the cathode unit 22 is disposed at the end position En, the second end Re2 where the sputtered particles SP reach later, out of the two ends of the formation region R1 in the scanning direction, and the target
- the distance D1 between the second end 23e2 of the head 23 is 150 mm or more in the scanning direction. Therefore, when the cathode unit 22 is scanned from the end position En toward the start position St, scanning of the cathode unit 22 is started from a state in which most of the sputtered particles SP emitted from the target 23 do not reach the substrate S. . Therefore, it is possible to suppress the sputtered particles SP reaching the second end 23e2 of the formation region R1 from being different from other portions in the formation region R1. As a result, variation in the composition of the IGZO film in the scanning direction can be suppressed.
- the supply of DC power to the target 23 is stopped with the cathode unit 22 placed at the end position En, and the supply of DC power is resumed with the cathode unit 22 placed at the end position.
- almost no sputtered particles SP reach the substrate S when the DC power is resumed. Therefore, the composition of the IGZO film can be prevented from varying in unit thickness or unit area.
- the distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 is 150 mm or more in the scanning direction, the molecular layer at the initial stage of formation of the IGZO film Thus, variation in the composition of the film can be suppressed. As a result, variations in the characteristics of the IGZO film at the boundary between the IGZO film and other members other than the IGZO film can be suppressed.
- the first shielding plate 28a When the cathode unit 22 is scanned from the start position St toward the end position En, the first shielding plate 28a has an incident angle among the sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22. Sputtered particles SP whose ⁇ is 30 ° or less are not allowed to reach the substrate S. For this reason, since the sputtered particles SP that first reach the formation region R1 are limited to the sputtered particles SP having an incident angle ⁇ larger than 30 °, variations in composition in unit thickness and unit area at the initial stage of formation of the IGZO film can be suppressed. .
- the second shielding plate 28b reaches the substrate S with sputtered particles SP having an incident angle of 30 ° or less. I won't let you. Therefore, the sputtered particles SP that are emitted from the first erosion region E1 and reach the substrate S following the sputtered particles SP that first reach the substrate S are also limited to the sputtered particles SP having an incident angle ⁇ larger than 30 °. .
- the IGZO film is formed only by the sputtered particles SP with the incident angle ⁇ limited, variations in composition in unit thickness and unit area can be suppressed over the entire thickness direction of the IGZO film.
- the magnetic circuit scanning unit 29 places the magnetic circuit 25 at the first position P1. Therefore, compared with the case where the magnetic circuit 25 is disposed at another position between the first position P1 and the second position P2, the first erosion region E1 formed by the magnetic circuit 25, the first shielding plate 28a, The distance in the scanning direction between is the smallest. Therefore, the range of the incident angle ⁇ of the sputtered particles SP that collides with the first shielding plate 28a becomes the largest, and the magnetic circuit 25 is disposed at another position in the vicinity of the first end Re1 of the formation region R1. Compared to the case, sputtered particles SP having a larger incident angle ⁇ arrive. As a result, variation in composition in the IGZO film is further suppressed.
- the magnetic circuit 25 is scanned once from the first position P1 toward the second position P2, so that the relative speed of the magnetic circuit with respect to the target 23 does not change. Therefore, variations in the thickness of the compound film in the scanning direction of the target 23 can be suppressed.
- the distance D1 and the distance D2, the first deceleration position BP1 and the first acceleration position AP1, the second deceleration position BP2 and the second acceleration position AP2, and the start position St and the end position En are all in the scanning direction.
- these can be set asymmetric according to film characteristics such as the film thickness of the substrate S.
- only the selected relationship among the distances D1 and D2, the first deceleration position BP1 and the first acceleration position AP1, the second deceleration position BP2 and the second acceleration position AP2, and the start position St and the end position En is selected.
- the distance between the first acceleration position AP and the second acceleration position AP2 is set to 10
- the distance between the second deceleration position BP2 and the first deceleration position BP1 is set to 8
- the ratio is set. it can.
- FIG. 8 is a configuration diagram schematically showing the configuration of the cathode unit in the present embodiment. This embodiment is different from the first embodiment described above in respect of the number of targets. The other components corresponding to those in the first embodiment described above are denoted by the same reference numerals and description thereof is omitted.
- the cathode unit 22 includes a first cathode 22A and a second cathode 22B, as shown in FIG.
- Each of the first cathode 22A and the second cathode 22B includes a target 23, a backing plate 24, a magnetic circuit 25, and a magnetic circuit scanning unit 29.
- the targets 23 of each unit are arranged along the scanning direction, and the surfaces 23a of the two targets 23 are included in the same plane parallel to the virtual plane Pid. It is.
- the first cathode 22A is closer to the formation region R1 in the scanning direction than the second cathode 22B. Further, in the first cathode 22A and the second cathode 22B, each backing plate 24 is connected in parallel to one AC power supply 26A. A midpoint 23e3 (center position) of the target 23 is set between the first cathode 22A and the second cathode 22B.
- the cathode unit 22 includes a scanning unit 27 that moves the cathode unit 22 in the scanning direction.
- the scanning unit 27 moves the cathode unit 22 along the scanning direction in a state where the first cathode 22A and the second cathode 22B are connected. To move.
- the cathode unit 22 accelerates until the midpoint 23e3 (center position) of the target 23 reaches the first acceleration position AP1 from the start position St.
- the first scanning speed V1 is set.
- the target 23 moves at a constant speed at the first scanning speed V1 until the midpoint 23e3 (center position) reaches the second acceleration position AP2 from the first acceleration position AP1.
- the target 23 is accelerated to the second scanning speed V2.
- the middle point 23e3 (center position) of the target 23 moves at the second scanning speed V2 at a constant speed until it reaches the second deceleration position BP2 from the second acceleration position AP2.
- the target 23 is decelerated to the first scanning speed V1. Thereafter, the target 23 moves at a constant speed at the first scanning speed V1 until the middle point 23e3 (center position) reaches the first deceleration position BP1 from the second deceleration position BP2. Finally, the target 23 is decelerated and stopped until the midpoint 23e3 (center position) of the target 23 reaches the end position En from the first deceleration position BP1, and the scanning ends.
- the cathode unit 22 includes a first shielding plate 28a and a second shielding plate 28b.
- the first shielding plate 28a is in a state where the cathode unit 22 is disposed at the start position St, and the first end Re1 of the formation region R1. And the first end 23e1 of the target 23 of the first cathode 22A.
- the second shielding plate 28b is farther from the first end Re1 of the formation region R1 than the second end 23e2 of the target 23 of the second cathode 22B in a state where the cathode unit 22 is disposed at the start position St. Placed in a different position.
- Each shielding plate 28a, 28b is a plurality of sputtered particles SP emitted from the erosion regions E1, E2 of the first cathode 22A and the second cathode 22B, and sputtered particles SP having an incident angle ⁇ within a predetermined range. Do not reach the substrate S.
- the first shielding plate 28a and the second shielding plate 28b have the same configuration related to the limitation of the sputtered particles SP that reach the substrate S, although the positions of the first shielding plate 28a and the second shielding plate 28b are different from each other. Therefore, below, the 2nd shielding board 28b is demonstrated in detail, and description of the 1st shielding board 28a is abbreviate
- the distance between the first erosion region E1 of the first cathode 22A and the second shielding plate 28b in the scanning direction is the largest. Therefore, among the plurality of sputtered particles SP emitted in the direction opposite to the direction from the first erosion region E1 of the first cathode 22A toward the cathode unit 22, the incident angle of the sputtered particles SP that collide with the second shielding plate 28b.
- the range of ⁇ 3 is the smallest.
- the second shielding plate 28b has an incident angle ⁇ 3 of 9 ° or less among the plurality of sputtered particles SP emitted in the direction opposite to the direction of the cathode unit 22 from the first erosion region E1 of the first cathode 22A.
- the sputtered particles SP are not allowed to reach the substrate S.
- the plurality of sputtered particles SP emitted in the direction opposite to the direction toward the cathode unit 22 is the second erosion region E2 of the first cathode 22A.
- the flight path F of the plurality of sputtered particles SP emitted from the first erosion region E1 passes through a region having a high plasma density before reaching the substrate S.
- the sputtered particle SP having an incident angle ⁇ 3 of 9 ° or less compared to the sputtered particle SP having a larger incident angle ⁇ , the sputtered particle SP has exceeded the region of B ⁇ 0 extending along the height direction from another erosion region.
- the flight distance until reaching the substrate S is increased.
- the number of times the sputtered particles SP collide with particles other than the active species such as the sputter gas in a space beyond the region of B ⁇ 0, which is a high plasma density region increases. Therefore, the energy of the sputtered particles SP is reduced, and the film density is reduced in the IGZO film formed by the sputtered particles SP having a small incident angle ⁇ .
- the film density of the IGZO film is away from the theoretical density, the film characteristics of the IGZO film are lowered.
- the second shielding plate 28b has a second erosion region of the second cathode 22B when the magnetic circuit 25 of the second cathode 22B is disposed at the first position P1, as with the second shielding plate 28b in the first embodiment.
- Some of the plurality of sputtered particles SP emitted from E2 do not reach the substrate S. That is, the second shielding plate 28b has an incident angle ⁇ 2 of 30 ° or less among the sputtered particles SP emitted in the direction opposite to the direction of the cathode unit 22 from the second erosion region E2 of the second cathode 22B.
- the sputtered particles SP are not allowed to reach the substrate S. Therefore, variation in composition in unit thickness and unit area of the IGZO film can be suppressed.
- the first shielding plate 28a like the second shielding plate 28b, has an incident angle ⁇ 3 of 9 among the plurality of sputtered particles emitted from the second erosion region E2 of the second cathode 22B toward the cathode unit 22. Do not allow sputtered particles that are less than or equal to ° to reach the substrate S.
- the first shielding plate 28a has a first erosion region of the first cathode 22A, similar to the first shielding plate 28a in the first embodiment, when the magnetic circuit 25 of the first cathode 22A is disposed at the second position P2. Some of the plurality of sputtered particles SP emitted from E1 do not reach the substrate S. That is, the first shielding plate 28a is a substrate for sputtered particles SP having an incident angle ⁇ 2 of 30 ° or less among the sputtered particles SP emitted from the first erosion region E1 of the first cathode 22A toward the cathode unit 22. Do not reach S.
- first shielding plate 28a and the second shielding plate 28b do not allow the sputtered particles having an incident angle of 9 ° or less to reach the formation region, it is possible to suppress the film density of the IGZO film from being reduced.
- FIG. 9 is a configuration diagram schematically showing the configuration of the sputtering chamber in the present embodiment.
- FIG. 10 is a diagram for explaining the action of sputtering in the present embodiment.
- FIG. 11 is a diagram for explaining the action of sputtering in the present embodiment.
- This embodiment differs from the first and second embodiments described above in terms of the number of cathode units provided in the sputtering chamber 13.
- Other components corresponding to those in the first and second embodiments described above are denoted by the same reference numerals, and description thereof is omitted.
- the cathode device 18 includes a first unit 31 and a second unit 32.
- the first unit 31 and the second unit 32 are arranged in this order from a position close to the first end Re1 of the formation region R1 in the scanning direction in a state of being arranged at the start position St.
- Each of the first unit 31 and the second unit 32 includes a target 23, a backing plate 24, a magnetic circuit 25, a DC power supply 26D, a first shielding plate 28a, and a second shielding plate 28b.
- Targets 23 are arranged along the scanning direction.
- the first unit 31 and the second unit 32 are individually scanned in the facing region R2 along the scanning direction by one scanning unit 27.
- each of the first unit 31 and the second unit 32 includes a magnetic circuit scanning unit 29 as in the cathode unit 22 of the first embodiment.
- the main components of the first unit 31 and the second unit 32 are different from each other in the material of the target 23 that each has.
- the first unit 31 has, for example, the target 23 whose main component is silicon oxide
- the second unit 32 has, for example, the target 23 whose main component is niobium oxide.
- 95% by mass of the forming material is silicon oxide or niobium oxide, and preferably 99% by mass or more is silicon oxide or niobium oxide.
- the distance between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 included in the first unit 31 is 150 mm or more. Further, in the first unit 31 and the second unit 32, the midpoint 23e3 (center position) of the target 23 is set.
- the first unit 31 arranged at the start position St starts to release the sputtered particles SP.
- the distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 in the scanning direction is 150 mm or more.
- the erosion region of the first unit 31 is scanned along the scanning direction in the facing region R2 facing the formation region R1. .
- the first unit 31 accelerates until the midpoint 23e3 (center position) of the target 23 reaches the first acceleration position AP1 from the start position St.
- the first scanning speed V1 is set.
- the target 23 moves at a constant speed at the first scanning speed V1 until the midpoint 23e3 (center position) reaches the second acceleration position AP2 from the first acceleration position AP1.
- the target 23 is accelerated to the second scanning speed V2.
- the middle point 23e3 (center position) of the target 23 moves at the second scanning speed V2 at a constant speed until it reaches the second deceleration position BP2 from the second acceleration position AP2.
- the target 23 is decelerated to the first scanning speed V1. Thereafter, the target 23 moves at a constant speed at the first scanning speed V1 until the middle point 23e3 (center position) reaches the first deceleration position BP1 from the second deceleration position BP2. Finally, the target 23 is decelerated and stopped until the midpoint 23e3 (center position) of the target 23 reaches the end position En from the first deceleration position BP1, and the scanning ends.
- the sputtered particles SP reaching the substrate S are limited to the sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a and the second shielding plate 28b. Therefore, variations in the composition of the film in the initial layer of the silicon oxide film can be suppressed.
- the second unit 32 arranged at the start position St starts to release the sputtered particles SP.
- the distance D1 between the second end 23e2 of the target 23 of the first unit 31 and the second end Re2 of the formation region R1 is 150 mm or more. is there.
- the scanning unit 27 does not scan the second unit 32 while the scanning unit 27 scans the first unit 31 from the start position St toward the end position En.
- the second unit 32 moves along the scanning direction from the start position St toward the end position En. Thereby, the erosion area
- the second unit 32 accelerates until the midpoint 23e3 (center position) of the target 23 reaches the first acceleration position AP1 from the start position St.
- the first scanning speed V1 is set.
- the target 23 moves at a constant speed at the first scanning speed V1 until the midpoint 23e3 (center position) reaches the second acceleration position AP2 from the first acceleration position AP1.
- the target 23 is accelerated to the second scanning speed V2.
- the middle point 23e3 (center position) of the target 23 moves at the second scanning speed V2 at a constant speed until it reaches the second deceleration position BP2 from the second acceleration position AP2.
- the target 23 is decelerated to the first scanning speed V1. Thereafter, the target 23 moves at a constant speed at the first scanning speed V1 until the middle point 23e3 (center position) reaches the first deceleration position BP1 from the second deceleration position BP2. Finally, the target 23 is decelerated and stopped until the midpoint 23e3 (center position) of the target 23 reaches the end position En from the first deceleration position BP1, and the scanning ends.
- the sputtered particles SP reaching the substrate S are limited to the sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a and the second shielding plate 28b. Therefore, variations in the composition of the film in the initial layer of the niobium oxide film can be suppressed.
- the distance D1 between the second end 23e2 of the target 23 included in the second unit 32 and the second end Re2 of the formation region R1 is 150 mm. That's it.
- the scanning unit 27 does not scan the first unit 31 while the scanning unit 27 scans the second unit 32 from the start position St toward the end position En.
- the same effects as those of the first and second embodiments described above can be obtained, and in the laminated film composed of the silicon oxide film and the niobium oxide film, the substrate S in the silicon oxide film Therefore, the composition of the boundary between the silicon oxide film and the niobium oxide film can be prevented from varying.
- the main components in the formation material of the target 23 are oxide semiconductors other than IGZO, for example, zinc oxide, nickel oxide, tin oxide, titanium oxide, vanadium oxide, indium oxide, and Strontium titanate or the like may be used.
- the main components in the formation material of the target 23 may be other than IGZO, and oxide semiconductors other than IGZO containing indium, for example, indium zinc tin oxide (IZTO), oxidation Indium zinc antimony (IZAO), indium tin zinc oxide (ITZO), indium zinc oxide (IZO), indium antimony oxide (IAO), or the like may be used.
- IZTO indium zinc tin oxide
- IZAO oxidation Indium zinc antimony
- ITZO indium tin zinc oxide
- IAO indium antimony oxide
- the main component in the forming material of the target 23 is not limited to IGZO, but may be, for example, indium tin oxide (ITO) and inorganic oxides such as aluminum oxide.
- ITO indium tin oxide
- aluminum oxide aluminum oxide
- the main component in the material for forming the target 23 may be a metal, a metal compound, a semiconductor, or the like.
- a single metal or semiconductor is used as the main component of the material for forming the target 23
- an oxide film or a nitride is produced by a reaction between the sputtered particles SP emitted from the target 23 and plasma generated from the reaction gas.
- a compound film such as a film can be formed.
- both the first unit 31 and the second unit 32 are arranged at the start position St. It does not have to be a configuration.
- the first unit 31 may be arranged at the start position St and the second unit 32 may be arranged at the end position En.
- D1 is 150 mm or more.
- the distance D1 in the scanning direction between the second end 23e2 of the target 23 of the second unit 32 and the second end Re2 of the formation region R1 is 150 mm or more is preferable.
- the scanning unit 27 moves the first unit 31 from the start position St toward the end position En along the scanning direction. Thereby, for example, a silicon oxide film is formed in the formation region R1. Then, the scanning unit 27 moves the first unit 31 along the scanning direction from the end position En toward the start position St. At this time, the first unit 31 may or may not emit the sputtered particles SP to the formation region R1. Next, the scanning unit 27 moves the second unit 32 along the scanning direction from the end position En toward the start position St. Thereby, for example, a niobium oxide film is formed in the formation region R1. Then, the scanning unit 27 moves the second unit 32 along the scanning direction from the start position St toward the end position En. At this time, the second unit 32 may or may not emit the sputtered particles SP to the formation region R1.
- the number of times each of the first unit 31 and the second unit 32 moves between the start position St and the end position En along the scanning direction while releasing the sputtered particles SP is the compound film formed by each unit. It can be changed according to the thickness.
- the sputter apparatus 10 may be configured to include two sputter chambers 13 each having one cathode unit 22.
- the cathode unit 22 of each sputter chamber 13 includes the targets 23 whose main components are different from each other, so that a laminate composed of two compound films is formed on the surface Sa of the substrate S.
- the sputtering apparatus 10 may include three or more sputtering chambers 13 each having one cathode unit 22, and the main components in the material for forming the target 23 included in each cathode unit 22 may be different from each other. According to such a configuration, a laminate composed of three or more compound films is formed on the surface Sa of the substrate S.
- the first unit 31 of the third embodiment may include a target 23 whose main component of the forming material is other than silicon oxide, and the second unit 32 is a target 23 whose main component of the forming material is other than niobium oxide. May be provided.
- the main component of the forming material may be any of a metal, a metal compound, and a semiconductor.
- the sputter chamber 13 of the third embodiment may be configured to include three or more cathode units 22, and the main components in the forming material of the target 23 included in each cathode unit 22 may be different or the same. May be.
- the cathode unit 22 of the second embodiment includes a third shielding plate 28c disposed between the target 23 of the first cathode 22A and the target 23 of the second cathode 22B in the scanning direction. May be provided.
- the protruding width in the width direction of the third shielding plate 28c may be different from the first shielding plate 28a and the second shielding plate 28b, or may be the same.
- the 3rd shielding board 28c is an example of a 3rd shielding part.
- the 3rd shielding board 28c in a scanning direction corresponds with the middle point 23e3 (center position).
- the distance between the first erosion region E1 of the first cathode 22A and the third shielding plate 28c in the scanning direction is the largest. growing.
- the distance between the first erosion region E1 and the third shielding plate 28c in the scanning direction is smaller than the distance between the first erosion region E1 and the second shielding plate 28b. Therefore, among the plurality of sputtered particles SP emitted in the direction opposite to the direction from the first erosion region E1 of the first cathode 22A toward the cathode unit 22, the incident angle of the sputtered particles SP that collide with the third shielding plate 28c.
- the range of ⁇ 4 is larger than 9 °.
- the maximum value of the flight path F is reduced at the plurality of sputtered particles SP reaching the formation region R1, and the maximum value of the number of collisions between the sputtered particles SP and other particles in the plasma is also reduced.
- the minimum value of the energy possessed by the sputtered particles SP is increased, and the film density of the IGZO film is suppressed from decreasing.
- the distance between the second erosion region E2 of the second cathode 22B and the third shielding plate 28c in the scanning direction is the largest.
- the distance is smaller than the distance between the second erosion region E2 and the first shielding plate 28a in the scanning direction. Therefore, among the plurality of sputtered particles SP emitted in the direction from the second erosion region E2 of the second cathode 22B toward the cathode unit 22, the range of the incident angle ⁇ of the sputtered particles SP that collide with the third shielding plate 28c is It becomes larger than 9 °. Therefore, the third shielding plate 28c acts on the sputtered particles SP emitted from the second cathode 22B in the same manner as the sputtered particles SP emitted from the first cathode 22A.
- the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 to the second position P2 along the scanning direction.
- the magnetic circuit scanning unit 29 may move the magnetic circuit 25 from the second position P2 toward the first position P1 along the scanning direction.
- the scanning unit 27 causes the target 23 to scan the counter region R2 once
- the magnetic circuit scanning unit 29 scans the magnetic circuit 25 once from the second position P2 to the first position P1, thereby causing the above-described operation. It is possible to obtain the effect.
- the magnetic circuit scanning unit 29 may be configured to cause the magnetic circuit 25 to scan a part between the first end 23e1 and the second end 23e2 of the target 23 along the scanning direction.
- the shielding plate having a smaller protrusion width is used as the sputtered particle SP having the same incident angle ⁇ as that of each of the above-described embodiments. Is not allowed to reach the formation region R1.
- the cathode unit 22 includes a magnetic circuit scanning unit 29.
- the cathode unit 22 may not include the magnetic circuit scanning unit 29. That is, the cathode unit 22 may have a configuration in which the position of each erosion region with respect to the target 23 is fixed. Even with such a configuration, it is possible to obtain a suitable film thickness distribution by setting the speed of the midpoint 23e3 (center position) of the target 23 from the start position St to the end position En as described above. .
- the second shielding plate 28b includes the sputtered particles SP whose incident angle ⁇ is 9 ° or less among the sputtered particles SP emitted from the first erosion region E1 of the first cathode 22A.
- the formation region R1 may be reached. Further, even if the first shielding plate 28a causes the sputtered particles SP emitted from the second erosion region E2 of the second cathode 22B to have the incident angle ⁇ of 9 ° or less reach the formation region R1. Good.
- the first shielding plate 28a and the second shielding plate 28b may not have the above-described configuration, and a configuration in which no shielding plate is provided may be employed.
- the cathode unit 22 when the cathode unit 22 is disposed at the end position En, the second end Re2 of the formation region R1 and the second end Re2 of the formation region R1 in the scanning direction
- the distance with the 2nd end part 23e2 of the target 23 with the shortest distance may not be 150 mm.
- the cathode unit 22 when the cathode unit 22 is arranged at the start position St, the distance between the first end Re1 of the formation region R1 and the first end Re1 of the formation region R1 in the scanning direction is the shortest. If the distance from the second end 23e2 of the target 23 is 150 mm, the above-described effects can be obtained.
- the sputter apparatus 10 does not need to include the carry-in / out chamber 11 and the pretreatment chamber 12, and if the sputter chamber 13 is included, the effects listed above can be obtained.
- the sputtering apparatus 10 may include a plurality of pretreatment chambers 12.
- the width along the transport direction in the substrate S and the width toward the front of the paper surface are not limited to the above-described sizes, and can be changed as appropriate.
- the sputtering gas may be a rare gas other than argon gas, for example, helium gas, neon gas, krypton gas, and xenon gas.
- the reactive gas may be a gas containing oxygen other than the oxygen gas, a gas containing nitrogen, or the like, and can be changed according to the compound film formed in the sputtering chamber 13.
- the cathode unit 22 of the second embodiment may have a configuration including three or more cathodes each including a target 23, a backing plate 24, a magnetic circuit 25, an AC power supply 26A, and a magnetic circuit scanning unit 29.
- the sputter chamber 13 of the third embodiment may be configured to include two cathode units 22 including the cathode unit 22 of the second embodiment, that is, the first cathode 22A and the second cathode 22B.
- the conditions for forming the IGZO film are not limited to the conditions described in the above embodiment, but may be other conditions. In short, it is only necessary that the IGZO film can be formed on the surface Sa of the substrate S.
- the sputtering apparatus may be embodied as a cluster type sputtering apparatus 50.
- the sputtering apparatus 50 includes a transfer chamber 51 on which the transfer robot 51R is mounted, and the following chambers connected to the transfer chamber 51. That is, the transfer chamber 51 is required for film formation, and a carry-in / out chamber 52 for carrying the substrate before film formation from the outside of the sputtering apparatus 50 and carrying the substrate after film formation to the outside of the sputtering apparatus 50.
- a pretreatment chamber 53 for performing pretreatment on a substrate and a sputtering chamber 54 for forming a compound film on the substrate are provided.
- the first acceleration position AP1 is set outside the first end Re1, and the first deceleration position BP1 is set outside the second end Re2.
- the first acceleration position AP1 can be located inside the substrate relative to the first end portion Re1, and the first deceleration position BP1 can be located inside the substrate relative to the second end portion Re2. Also in this case, it is possible to improve the film thickness distribution.
- the pattern of 2nd scanning speed V2: 10000mm / min, 5000mm / min, 2500mm / min is illustrated.
- the film thickness of the IGZO film formed at this time is shown in FIG.
- the figure shows a first end Re1 and a second end Re2.
- the distance between the first acceleration position AP1 and the second acceleration position AP2 is 300 mm, and the first scanning speed V1 / second scanning speed V2 is 50%, 75%, 91%, 100%. It was. Further, a trapezoidal shape is defined by matching the first acceleration position AP1 with the second acceleration position AP2.
- the film thickness of the IGZO film formed at this time is shown in FIG.
- the figure shows a first end Re1 and a second end Re2.
- the first acceleration position AP1, the second acceleration position AP2, the second deceleration position BP2, the first deceleration position BP1, the first scanning speed V1, and the second scanning speed V2 are set as described above. It can be seen that the film thickness distribution can be improved.
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Abstract
Description
本願は、2018年5月11日に日本に出願された特願2018-092341号に基づき優先権を主張し、その内容をここに援用する。
1.成膜特性のバラツキを抑える。
2.膜厚の均一性向上を図る。
3.特に基板縁部における成膜特性のバラツキを改善する。
本発明のスパッタリング方法は、前記開始位置から加速して前記第1走査速度になる位置が、前記第1端部よりも前記形成領域の外側とされ、前記第1走査速度から前記終了位置まで減速する位置が、前記第2端部よりも前記形成領域の外側とされることができる。本発明のスパッタリング方法は、前記開始位置から加速して前記第1走査速度になる位置が、前記第1端部よりも前記形成領域の内側とされ、前記第1走査速度から前記終了位置まで減速する位置が、前記第2端部よりも前記形成領域の内側とされることができる。
本発明において、前記走査部における前記ターゲットの速度が、前記走査方向において前記形成領域の中心に対して対称、または、非対称となるように制御することがより好ましい。
本発明は、前記第2走査速度に対する前記第1走査速度の比が、0.70~0.95の範囲に設定されることが可能である。
また、本発明において、前記走査方向における前記開始位置から前記第2走査速度になる位置までの距離が、200~400mmの範囲に設定される手段を採用することもできる。
また、前記走査方向において、前記開始位置から前記第2走査速度になる位置までの距離が、前記形成領域の前記第1端部と前記開始位置との距離に対する比として、1.3~2.7の範囲に設定されることができる。
前記形成領域の前記第1端部と前記開始位置との距離に対する比として、1.3~2.7の範囲に設定されることにより、形成領域に対応する走査方向での基板において、成膜厚さを均一化して、膜厚のバラツキを低減することが可能となる。
図1は、本実施形態のスパッタリング方法におけるスパッタ装置(反応性スパッタ装置)の全体構成を示す構成図である。図2は、本実施形態におけるスパッタチャンバの構成を模式的に示す構成図である。図3は、本実施形態におけるカソードユニットの構成を模式的に示す構成図である。図4,図6~図8は、本実施形態におけるスパッタリングの作用を説明するための図である。図1において、符号10は、スパッタ装置である。
本実施形態に係るスパッタ装置10は、図1に示すように、搬出入チャンバ11、前処理チャンバ12、および、スパッタチャンバ13が、1つの方向である搬送方向に沿って配列されている。3つのチャンバの各々は、相互に隣り合う他のチャンバとゲートバルブ14によって連結されている。3つのチャンバの各々には、チャンバ内の気体等を排気する排気部15が連結され、3つのチャンバの各々は、排気部15の駆動によって個別に減圧される。3つのチャンバの各々の底面には、搬送方向に沿って延びる相互に平行な2つのレーンである成膜レーン16と回収レーン17とが敷かれている。
前処理チャンバ12は、搬出入チャンバ11から前処理チャンバ12へ搬出された基板Sをスパッタチャンバ13へ搬入する。また、前処理チャンバ12は、スパッタチャンバ13から前処理チャンバ12へ搬出された基板Sを搬出入チャンバ11へ搬出する。
スパッタチャンバ13の成膜レーン16は、図2に示すように、前処理チャンバ12からスパッタチャンバ13へ搬入された基板Sを搬送方向に沿って搬送し、基板Sへの薄膜の形成が開始されてから終了されるまでの間は、成膜レーン16の途中でトレイTの位置を固定する。トレイTの位置がトレイTを支持する支持部材によって固定されるとき、基板Sにおける搬送方向の縁の位置も固定される。
また、カソードユニット22が開始位置Stに配置されるとき、走査方向でのターゲット23の中点23e3(中心位置)と、第1端部Re1との距離D2は、100mm~300mmである。
また、カソードユニット22が終了位置Enに配置されるとき、走査方向でのターゲット23の中点23e3(中心位置)と、第2端部Re2との距離D2は、100mm~300mmである。
次に、カソードユニット22の構成をより詳しく説明する。なお、図3には、図2で説明された開始位置Stにカソードユニット22が配置された状態が示されている。
次に、スパッタチャンバ13の作用を説明する。以下では、カソードユニット22が開始位置Stから終了位置Enに向けて走査方向に沿って移動する場合の作用を、図4に基づいてスパッタチャンバの作用の一例として説明する。
また、形成領域R1の第1端部Re1と、ターゲット23の第1端部23e1との間の距離D1が走査方向にて150mm以上であるため、IGZO膜の形成初期の分子層にて、膜の組成がばらつくことが抑えられる。
この際、カソードユニット22が走査方向に沿って移動する走査速度は、次のように設定される。
本実施形態において、カソードユニット22は、図5に示すように、その速度が、ターゲット23の中点23e3(中心位置)が開始位置Stから第1加速位置AP1に到達するまで加速して、第1走査速度V1となるようにする。その後、ターゲット23の中点23e3(中心位置)が第1加速位置AP1から第2加速位置AP2に到達するまで、第1走査速度V1で等速に移動する。そして、ターゲット23の中点23e3(中心位置)が第2加速位置AP2に到達した状態において、第2走査速度V2まで加速する。
第1加速位置AP1から第2加速位置AP2まで、カソードユニット22の速度は、第1走査速度V1で等速となるように設定される。また、開始位置Stから第1加速位置AP1まで、カソードユニット22の速度は、等加速となるように設定される。
第2加速位置AP2から第2減速位置BP2まで、カソードユニット22の速度は、第2走査速度V2で等速となるように設定される。
また、第2減速位置BP2は、第2加速位置AP2に対して、走査方向において基板Sの中心に対称な位置として設定されることができる。
第2減速位置BP2から第1減速位置BP1まで、カソードユニット22の速度は、第1走査速度V1で等速となるように設定される。
第1減速位置BP1から終了位置Enまで、カソードユニット22の速度は、等減速(等加速度)となるように設定される。
具体的には、第1加速位置APと第2加速位置AP2との距離を10とし、第2減速位置BP2と第1減速位置BP1との距離を8として、その比率を設定することなどが例示できる。
図8は、本実施形態におけるカソードユニットの構成を模式的に示す構成図である。本実施形態は、ターゲットの個数に関する点で、上述した第1実施形態と異なる。これ以外の上述した第1実施形態と対応する構成には同一の符号を付してその説明を省略する。
本実施形態において、カソードユニット22は、図8に示すように、第1カソード22Aと第2カソード22Bとを有している。第1カソード22Aと第2カソード22Bとの各々は、ターゲット23、バッキングプレート24、磁気回路25、および、磁気回路走査部29を備えている。第1カソード22Aと第2カソード22Bとでは、各ユニットの有するターゲット23が、走査方向に沿って並べられ、2つのターゲット23の表面23aの各々は、仮想平面Pidと平行な同一の平面に含まれる。
カソードユニット22が開始位置Stに配置されるとき、第1カソード22Aは、第2カソード22Bよりも走査方向にて形成領域R1に近い。また、第1カソード22Aと第2カソード22Bとでは、各バッキングプレート24が、1つの交流電源26Aに対して並列に接続している。
ターゲット23の中点23e3(中心位置)が第1カソード22Aと第2カソード22Bとの間に設定される。
図9は、本実施形態におけるスパッタチャンバの構成を模式的に示す構成図である。図10は、本実施形態におけるスパッタリングの作用を説明するための図である。図11は、本実施形態におけるスパッタリングの作用を説明するための図である。
本実施形態は、スパッタチャンバ13の備えるカソードユニットの個数に関する点で、上述した第1および第2実施形態と異なる。これ以外の上述した第1および第2実施形態と対応する構成要素に関しては、同一の符号を付してその説明を省略する。
本実施形態においては、カソード装置18が、第1ユニット31と第2ユニット32とを備えている。第1ユニット31および第2ユニット32は、開始位置Stに配置された状態で、走査方向にて形成領域R1の第1端部Re1に近い位置からこの順に並んでいる。
第1ユニット31および第2ユニット32の各々は、ターゲット23、バッキングプレート24、磁気回路25、直流電源26D、第1遮蔽板28a、および、第2遮蔽板28bを備え、2つのカソードユニットでは、ターゲット23が、走査方向に沿って並んでいる。第1ユニット31および第2ユニット32は、1つの走査部27によって、走査方向に沿って対向領域R2を個別に走査される。なお、第1ユニット31および第2ユニット32の各々は、第1実施形態のカソードユニット22と同様、磁気回路走査部29も備えている。
また、第1ユニット31および第2ユニット32において、ターゲット23の中点23e3(中心位置)がそれぞれ設定されている。
スパッタガスは、アルゴンガス以外の希ガス、例えば、ヘリウムガス、ネオンガス、クリプトンガス、および、キセノンガスであってもよい。また、反応ガスは、酸素ガス以外の酸素を含むガスや、窒素を含むガス等であってもよく、スパッタチャンバ13にて形成される化合物膜に合わせて変更可能である。
ここで、図においては、第2走査速度V2:10000mm/min、5000mm/min、2500mm/minのパターンを例示している。
<実験例1>
ここでは、IGZO膜が形成されるとき、ターゲット23の中点23e3(中心位置)を開始位置Stから終了位置Enまで走査する際に、図15に示すように、速度設定をおこなってカソードユニット22のエロージョン領域が、対向領域R2を1回走査された。
以下に成膜における諸元を示す。
・直流電力 : 15.1W/cm2
・アルゴンガス分圧: 0.3Pa
・酸素ガス分圧 : 0.02Pa
・基板Sの温度 : 100℃
・第2走査速度V2:2512.77mm/min
・第1走査速度V1/第2走査速度V2:91%
・第1加速位置AP1までの加速時間:0.2sec
・第1加速位置AP1と第2加速位置AP2との距離:200mm,300mm,400mmとして変化させた。
また、第1加速位置AP1を第2加速位置AP2と一致させたものを「台形」とした。
さらに、図17に示すように、第1加速位置AP1と第2加速位置AP2との距離を300mmとし、第1走査速度V1/第2走査速度V2:50%,75%,91%、100%とした。
また、第1加速位置AP1を第2加速位置AP2と一致させたものを「台形」とした。
11,52…搬出入チャンバ
12,53…前処理チャンバ
13,54…スパッタチャンバ
14…ゲートバルブ
15…排気部
16…成膜レーン
17…回収レーン
18…カソード装置
19…レーン変更部
21…ガス供給部
22…カソードユニット
22A…第1カソード
22B…第2カソード
23,TG…ターゲット
23a,TGs…表面
23e1…第1端部
23e2…第2端部
23e3…中点(中心位置)
24…バッキングプレート
25…磁気回路
26A…交流電源
26D…直流電源
27…走査部
28a…第1遮蔽板
28b…第2遮蔽板
28c…第3遮蔽板
29…磁気回路走査部
31…第1ユニット
32…第2ユニット
51…搬送チャンバ
51R…搬送ロボット
AP1…第1加速位置
AP2…第2加速位置
B…マグネトロン磁場
BP1…第1減速位置
BP2…第2減速位置
D1,D2…距離
E…エロージョン領域
E1…第1エロージョン領域
E2…第2エロージョン領域
En…終了位置
F…飛行経路
Lv…法線
P1…第1位置
P2…第2位置
Pid…仮想平面
R1…形成領域
R2…対向領域
Re1…第1端部
Re2…第2端部
S…基板
Sa…表面
SP…スパッタ粒子
St…開始位置
T…トレイ
V1…第1走査速度
V2…第2走査速度
Claims (7)
- 反応性スパッタ装置を用いるスパッタリング方法であって、
前記反応性スパッタ装置は、
成膜対象物に形成すべき化合物膜の形成領域に向けてスパッタ粒子を放出するカソード装置を備え、
前記形成領域と対向する空間が対向領域であり、
前記カソード装置が、
エロージョン領域を前記対向領域で走査する走査部と、
前記エロージョン領域が形成され、走査方向における長さが前記対向領域よりも短いターゲットと、を備え、
前記走査部が、
前記走査方向での前記形成領域の2つの端部のうち、前記スパッタ粒子が先に到達する第1端部に対して、前記走査方向における前記ターゲットの表面の中点が前記走査方向において前記形成領域の外側である開始位置から、
前記走査方向での前記形成領域の2つの端部のうち、他方の第2端部に対して、前記走査方向における前記ターゲットの前記表面の中点が前記走査方向において前記形成領域の外側である終了位置まで、前記対向領域に向けて前記エロージョン領域を走査し、
前記スパッタリング方法は、
前記走査部における前記ターゲットの速度を、前記開始位置から第1走査速度まで加速した後、さらに、第2走査速度まで加速し、その後、第1走査速度まで減速した後、前記終了位置まで走査するとともに、
前記第1走査速度から加速して前記第2走査速度になる位置が、前記第1端部よりも前記形成領域の内側とされ、
前記第2走査速度から減速されて前記第1走査速度になる位置が、前記第2端部よりも前記形成領域の内側とされる
スパッタリング方法。 - 前記開始位置から加速して前記第1走査速度になる位置が、前記第1端部よりも前記形成領域の外側とされ、
前記第1走査速度から前記終了位置まで減速する位置が、前記第2端部よりも前記形成領域の外側とされる
請求項1に記載のスパッタリング方法。 - 前記開始位置から加速して前記第1走査速度になる位置が、前記第1端部よりも前記形成領域の内側とされ、
前記第1走査速度から前記終了位置まで減速する位置が、前記第2端部よりも前記形成領域の内側とされる
請求項1に記載のスパッタリング方法。 - 前記走査部における前記ターゲットの速度が、前記走査方向において前記形成領域の中心に対して対称、または、非対称となるように制御する
請求項1から請求項3のいずれか一項に記載のスパッタリング方法。 - 前記第2走査速度に対する前記第1走査速度の比が、0.70~0.95の範囲に設定される
請求項4に記載のスパッタリング方法。 - 前記走査方向における前記開始位置から前記第2走査速度になる位置までの距離が、200~400mmの範囲に設定される
請求項4に記載のスパッタリング方法。 - 前記走査方向において、前記開始位置から前記第2走査速度になる位置までの距離が、
前記形成領域の前記第1端部と前記開始位置との距離に対する比として、1.3~2.7の範囲に設定される
請求項4に記載のスパッタリング方法。
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JP6666524B1 (ja) | 2020-03-13 |
KR20190129823A (ko) | 2019-11-20 |
TW201947050A (zh) | 2019-12-16 |
KR102202226B1 (ko) | 2021-01-13 |
TWI731312B (zh) | 2021-06-21 |
JPWO2019216003A1 (ja) | 2020-05-28 |
CN110719969B (zh) | 2021-07-09 |
CN110719969A (zh) | 2020-01-21 |
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