WO2019170843A2 - Dispositif et procédé de contrôle d'une plaquette - Google Patents

Dispositif et procédé de contrôle d'une plaquette Download PDF

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Publication number
WO2019170843A2
WO2019170843A2 PCT/EP2019/055804 EP2019055804W WO2019170843A2 WO 2019170843 A2 WO2019170843 A2 WO 2019170843A2 EP 2019055804 W EP2019055804 W EP 2019055804W WO 2019170843 A2 WO2019170843 A2 WO 2019170843A2
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WO
WIPO (PCT)
Prior art keywords
defects
defect
wafer
coordinates
detection area
Prior art date
Application number
PCT/EP2019/055804
Other languages
German (de)
English (en)
Inventor
Robert FRIEDEMANN
Sascha Winkler
Martin Engelhardt
Andreas Horn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2019170843A2 publication Critical patent/WO2019170843A2/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws

Definitions

  • the present invention relates to an apparatus and a method for inspecting a wafer.
  • Defects on surfaces of wafers are undesirable. Their occurrence in the production of a product based on a wafer should be avoided. Defects are, for example, impurities or structural defects in or on the materials used for the production of products on wafers.
  • Inspection systems are known from the prior art, by means of which defects can be detected on a wafer Kgs NEN. Such systems can provide the defects together with further information about the defects, such as their position, their size, etc., in a so-called defect data list.
  • the defect data list can be used to further examine a wafer.
  • the position information in such a defect data list may be given in the form of coordinates, with the origin of the coordinate system at a certain point on the wafer.
  • the problem with such a defect data list is that the coordinates stored for the detected defects can be relatively inaccurate. This is especially the case with defect data lists relating to unstructured wafers.
  • a wafer is considered in which no lithographic structuring level has yet been produced and to which no structuring photographic plane has yet been applied.
  • Causes of inaccuracies in the coordinates may lie in the fact that the inspection systems are subject to the respective set measuring principle and recording method corresponding systematic and random fluctuation, resulting in Va riationen within a plant of up to several 100 pm and correspondingly larger deviations between different systems can.
  • Claim 1 or by a device having the features of claim 12 or by a method with the features of
  • a device for in particular automatic inspection of a particular unstructured wafer comprises a sensor, such as an image capture device, for detecting a sensor in a detection range of the sensor, in particular in a field of view of the image capture device.
  • a sensor such as an image capture device
  • the apparatus further comprises a controller, which is designed to determine a number of defects on the wafer surface and, in particular, the setpoint coordinates belonging to each defect, in particular predetermined, which indicate the position of the defect on the wafer surface and to control the relative movement between the detection area and the wafer so that the detection area gradually comes to the target coordinates of each defect of the number of defects to detect the respective defect in the detection area.
  • a controller which is designed to determine a number of defects on the wafer surface and, in particular, the setpoint coordinates belonging to each defect, in particular predetermined, which indicate the position of the defect on the wafer surface and to control the relative movement between the detection area and the wafer so that the detection area gradually comes to the target coordinates of each defect of the number of defects to detect the respective defect in the detection area.
  • the device according to the invention thus makes it possible, in particular in an automated manner, to determine or select defects on the wafer surface and to approach these defects step by step, so that they can be detected by means of the detection range of the sensor. An accurate localization of the defects can thus be achieved.
  • the desired coordinates of the defects may be predetermined coordinates indicating the expected position of a respective defect on the wafer surface.
  • the desired coordinates can in particular be taken from a defect data list created for a respective wafer.
  • the desired coordinates of the defects can also be calculated coordinates at which the position of a defect on the wafer surface is expected when the corresponding coordinates are approached.
  • the controller can be designed to determine the actual coordinates of the respective defect on the basis of the position of a respective defect detected in the detection area.
  • the actual coordinates ie the actual coordinates, with respect to a Koor dinatensystem, which has its origin at a certain point, for example on the wafer surface, are determined.
  • the actual coordinates of a defect indicate the coordinates of the defect on the wafer surface determined by the device. They can therefore be regarded as actual coordinates on the wafer surface within the scope of measurement accuracy.
  • desired coordinates of a defect in particular those coordinates are referred to, which uses the ago direction for starting a respective defect. Actual coordinates can therefore become target coordinates if they are used by the device for approaching a defect.
  • Start-up means here in particular that the detection area arrives at the desired coordinates of a respective defect in order to enable a detection of the defect.
  • a defect lying in the detection area can be detected in particular by means of image processing.
  • a defect in a frame of the wafer surface detected by means of the detection area can have a different color or gray value than its surroundings. This different color or gray value can be detected by means of image processing and evaluated as the position of the defect in the detection area. The position thus detected can be converted into coordinate values of a two-dimensional coordinate system, whereby the actual coordinates of the defect can be determined.
  • the device according to the invention is particularly suitable for inspecting unstructured wafers, but can also be used for structured wafers.
  • the sensor can have an image capture device with a microscope, by means of which, for example, the defects are examined more closely can.
  • the detection area can be a field of view of a microscope objective, by means of which the surface of a wafer is considered.
  • the detection area or the field of view is normally much smaller than the wafer surface, so that by a relative movement between the wafer and the detection area, each area of the upper surface can reach the detection area and be viewed.
  • the controller may be configured to determine the defects of the number of defects on the wafer surface.
  • a determination of the defects can advantageously be made on the basis of information which is transmitted via the wafer, e.g. were obtained by previous measurements.
  • information about defects on the surface of an unstructured wafer may be present in a defect data list, in particular in the form of a file, for example in the CLEAR format, which has been obtained by means of an inspection system known per se.
  • the device may use a defect data list associated with the wafer to be examined in order to determine the defects of the number of defects on the basis of this.
  • Defects of the number of defects can thus be determined by selecting defects from a defect data list. From this, the target coordinates of the defects can also be taken, since a defect data list contains information about the positions of the defects on the wafer surface.
  • the device according to the invention allows an inspection of defects on surfaces of unstructured Wafern and makes it possible, for example, to determine more precisely the coordinates provided via a defect data list.
  • the defects can be approached more accurately on the basis of the more precisely determined coordinates and thus bring in an improved manner into a detection range, such as, for example, the field of view of a microscope objective, and, for example, examine it more closely.
  • Coordinates provided via the defect data list may be regarded as desired coordinates for the defects lying on the surface of a wafer. A specific or selected number of defects on the wafer surface can be approached on the basis of the desired coordinates, so that each selected defect can gradually be brought into the detection range. On the basis of the position of a respective defect in the detection area, the actual coordinates with respect to a defined coordinate origin can be determined. The averaged actual coordinates can then be e.g. used to correct desired coordinates of other defects from the defect data list.
  • the controller is configured to select the defects of the number of defects and the associated desired coordinates from a given plurality of defects with associated desired coordinates.
  • the plurality of defects with desired coordinates can be provided in a defect data list associated with the wafer to be examined.
  • the predetermined plurality of defects can thus include, for example, all defects detected in a defect data list. Of all these many defects, not all defects are preferably selected, but only a number of defects. This has the advantage that the determination of the actual coordinates for the defects of the number of defects can be accomplished more quickly.
  • defects can be selected that are specific Meet criterion, whereby the determination of the actual coordinates can be carried out more efficiently, easily and with greater accuracy.
  • the controller may be designed in dependence on - for the defects of the number of defects determined actual
  • Coordinates and preferably their desired coordinates - to determine new desired coordinates for at least one defect of the plurality of defects is a defect of the plurality of defects, which does not belong to the number of defects and for which therefore no actual coordinates were determined by means of the sensor.
  • the controller can be designed to determine a correction rule from the actual coordinates determined for the defects of the number of defects and their desired coordinates, by means of the new, corrected nominal coordinates for at least one further defect can be calculated.
  • the controller may determine a first difference vector between the target coordinates of the first and second defects for a first defect and a second defect from the number of defects.
  • the controller may determine a second difference vector between the actual coordinates of the first and second defects. The controller can then determine to which stretch factor of the second difference vector respect. of the first difference vector is stretched or compressed and by what angle the second difference vector is rotated relative to the first difference vector.
  • the controller may determine a third difference vector indicative of the difference between the actual coordinates and desired coordinates of the first defect. From the desired coordinates of the first defect, the third difference vector and the extension factor and angle, a correction rule can be determined; hand, the previously measured actual position of the second defect can be calculated.
  • a corresponding third difference vector can be determined for each pair, which indicates the difference between the actual coordinates and desired coordinates of a defect of the respective defect pair.
  • target and actual coordinates of the aforementioned stretching factor and angle can be determined from the determined for the respective pair of defects.
  • a correction rule in particular using a Gauss-Newton method, can be determined in such a way that, starting from a defect, the number of defects and the e.g. From the de Maschinensteinliste taken desired coordinates of another de effets new setpoint coordinates for this further defect can be determined be.
  • the new target coordinates are exactly the same as the actual actual coordinates of the further defect, which can thus be approached in a more accurate manner.
  • the controller is designed to select the defects of the number of defects from information provided about a multiplicity of defects on the surface of the wafer, in particular from a defect data list, as a function of at least one criterion, the information for each defect of the plurality of defects, information about the desired coordinates of the respective defect and / or about the size of the respective defect.
  • control is based on the information provided, in particular in particular from the defect data list, which selects 3 to n (n> 3) largest defects.
  • the controller is adapted to select the defects from the provided information such that they are freestanding defects.
  • Detached defects are, in particular, defects that can be detected on their own in the detection area, ie without any additional defect disturbing the detection.
  • a selected, free-standing defect can thus be identified as such in the detection area.
  • Free standing defects are relatively easy to identify reference points on the surface of a wafer.
  • an unambiguous assignment of a free-standing defect to the corresponding data entry in a defect data list is possible, while if the defects are not free, the difficulty may exist to unambiguously assign a detected defect to a corresponding data entry in the defect data list.
  • the controller can be designed to identify freestanding defects as a function of the size of the detection area from the information provided, in particular from the defect data list, which are detectable on their own, ie without a further defect, in the detection area.
  • the controller may be configured to generate a pattern having a plurality of rectangular or square adjoining grids depending on a coordinate system to which the desired coordinates in the provided information relate, each coordinate of the coordinate system being assigned to a grid is, and wherein the controller is further adapted to assign the desired coordinates of each defect of the plurality of defects to the ent speaking grid.
  • the controller may identify a defect as a free-standing defect, if this one Defect is located in a grid that is surrounded by a predetermined number of grids in which there is no defect.
  • the controller may be configured to select the defects from the information provided depending on the defect size.
  • a defect data list for example, large or small defects can be identified.
  • the controller may be configured to select the defects from the provided information to have a minimum size or a maximum size.
  • the controller may be configured to select the defects from the provided information such that their size is within an interval that is a lower and upper one
  • the controller is designed to select the defects from the information provided in such a way that the selected defects are distributed over the entire surface of the wafer.
  • the defects can thus be e.g. are selected such that at least one selected defect lies in each or almost every area of the surface of the wafer.
  • the controller may also be configured to select defects that occur on the wafer surface. Defects at the edge area of the wafer can thereby be prioritized. Preferably, the controller is adapted to no longer use a defect of the number of defects to determine its actual coordinates if it can not be detected at its desired coordinates in the detection range, or if two of the more at the target coordinates of the defect Defects in the detection range of the sensor are detected can. An erroneous detection of actual coordinates can be avoided. In addition, confusion between several defects in the detection area can be excluded. In addition, an unambiguous assignment of the determined actual coordinates to a specific defect can be achieved.
  • the controller is designed to:
  • a first pass selecting a first number of defects from information provided on a plurality of defects such that the selected defects of the first number of defects are free-standing large defects, preferably distributing the defects of the number of defects over the entire surface of the wafer are to control, using the target coordinates of the selected defects, the relative movement between the detection area and the wafer such that the detection area gradually arrives at the target coordinates of each selected defect, based on the position of the respective defect in the detection area Determine coordinates of the respective defect, in a second pass select a second number of defects from the information such that the selected defects of the second number of defects are freestanding small defects, preferably the defects of the second number of defects over the entire Oberf
  • the wafer is distributed so as to control the relative movement between the detection area and the wafer in such a way that the detection area gradually acquires the new desired coordinates of each selected defect of the second number of defects passes, wherein the new desired coordinates in dependence on the determined in the first passage actual coordinates
  • a correction rule can be determined by means of which the new target coordinates for the small defects used in the second pass are more accurate let determine.
  • Such a determination of new target coordinates for defects not yet approached can be determined, for example, for all defects to be investigated in more detail as a function of the actual coordinates determined in the second pass and the determined new target coordinates. Since small defects will be considered in the second round, the actual position, it can be accurately determined by means of image recognition detection area because of the small size of the defects Messabweichun gen and inaccuracies in the image recognition little training W have im pact.
  • the device thus allows a precise match between the original desired coordinates of defects, such as those provided in a defect data list, and the real coordinates of the defects on the surface of a wafer.
  • the defects can be precisely approached by determining and using the new desired coordinates and displayed, for example, in the center of the field of view of a microscope.
  • a detailed examination of the defects eg in the form of a manual inspection, is thus possible.
  • freestanding defects can also be identified in an improved manner and distinguished from adjacent defects.
  • the sensor is a Schmfas sungs worn with a microscope, wherein it is at the detection area is a field of view of the lens of the microscope.
  • the detection region can be movable relative to the wafer or, conversely, the wafer can be moved, in particular moved, relative to the detection region.
  • the wafer can be arranged for example on a movable table of a microscope or another, in particular imaging, sensor device.
  • the detection region which is, for example, the field of view of the objective of a microscope, can be movable over the surface of the wafer lying on the objective table, so that different sections of the wafer surface are viewed depending on the position of the field of view can.
  • the device may include a loading device for loading the device with the wafer. With the loading device, the wafer, in particular in a defined position on a support, such as the lens stage, are brought.
  • the invention also relates to a method for, in particular automatic, inspection of a particular unstructured wafer, in particular in an inspection device according to the invention, with the steps:
  • the invention also relates to a method for, in particular automatic, inspection of a particular unstructured wafer, in particular in an inventive inspection device in which
  • a first number of defects from provided information about a plurality of defects on a surface of the wafer such that the selected defects are free-standing large defects, which are preferably distributed over the entire surface, using desired coordinates of the selected ones
  • Defects a relative movement between a detection range of a sensor, in particular a field of view of an image detection device, and the wafer is controlled such that gradually reaches the detection range to the desired coordinates of each de fects, determining, based on the position of the respective defect in the detection area, the actual coordinates of the respective defect, a second number of defects are selected from the information such that the selected defects are free-standing small defects, which are preferably distributed over the entire surface, using new target coordinates, the relative movement between the detection area and the wafer is controlled such that the detection area gradually arrives at the new target coordinates of each defect of the second number of defects, the new desired coordinates depending on the determined Actual coordinates of the defects of the first number of defects are determined, and based on the position of the respective defect in Er chargedsbe rich the
  • the invention also relates to:
  • a data processing system comprising means for carrying out a method according to the invention
  • the apparatus and methods described herein allow for inspection of particular unstructured wafers. In particular, exact coordinates of defects on a surface of a wafer can be determined. These coordinates allow a precise approach of the defects, for example by means of them to examine a microscope more closely.
  • the devices and methods described herein may be used, for example, in processes for fabricating patterned wafers, such as for semiconductor applications or for manufacturing LED chips.
  • the examined wafers may be all types, types of materials and sizes of, in particular, unstructured wafers, e.g. 6 or 8 inch wafers, such as silicon.
  • FIG. 1 shows a block diagram of a variant of a device according to the invention for automatically inspecting an unstructured wafer
  • FIG. 2 is a plan view of a wafer under an image capture device of the device of FIG. 1;
  • FIG. 3 is another plan view of the wafer of Fig. 2,
  • Fig. 4 is an illustration for determining new target coordinates for a defect
  • FIG. 5 shows a flow chart of a variant of a method according to the invention for automatically inspecting an unstructured wafer
  • FIG. 6 is a flow chart of a further variant of a method according to the invention for the automatic inspection of an unstructured wafer, and 7 shows an illustration of a variant for finding freestanding defects.
  • the apparatus described in more detail with reference to FIGS. 1 to 4 for the in particular automatic inspection of an unstructured wafer 11 comprises a sensor 13, which is an image capture device, for detecting a signal which is detected in a detection area 15 (see FIG. 2 and 3) of a surface 17 of the unstructured wafer 11.
  • the detection region, which is the field of view 15 of the image capture device 13, and the wafer 11 are movable relative to one another, so that a relative movement between the field of view 15 and Each area of the surface 17 of the wafer 11 can be brought into the field of view 15 of the wafer 11.
  • the apparatus includes a controller 19 which may determine a number of defects on the wafer surface 17 as well as the desired coordinates associated with each defect (in Figs. 2 and 3, for illustration purposes, some defects are marked with the reference numeral 21).
  • the desired coordinates of a respective defect 21 describe the position of the defect 21 on the wafer surface 17 and with respect to a defined origin of origin, which may be at a location on the wafer surface, for example.
  • Wafer-specific information about a plurality of defects 21 on the surface 17 of the wafer 11 and their desired coordinates can be provided to the device by means of a defect data list 23.
  • the defect data list 23 may, for example, have been created by an inspection installation known from the prior art with which the wafer 11 was previously inspected.
  • the defect data list 23 may, for example, be in the CLEAR format and in a memory 25 the device are loaded so that the controller 19 can access the defect data list 23.
  • the determination of the number of defects by the controller 19 can in particular be carried out by the controller 19, the number of defects from the defect data list 23, for example based on a criterion or on the basis of several criteria, from the plurality of defects 21, which in the defect data list 23 are selected.
  • the image capture device 13 may have a microscope 31 aufwei sen and the field of view 15 may be the field of view ei nes objective 27 of the microscope 31. Furthermore, the wafer 11 can be deposited on a stage 29 of the microscope 31 so that its surface 17 can be viewed by means of the field of view 15 of the objective 27 (see FIGS. 2 and 3).
  • the object table 29 can be moved in a horizontal plane, controlled by the controller 19, so that each area of the surface 17 of the wafer 11 can be brought into the field of view 15.
  • the objective 27 can be moved in a plane parallel to the surface 17, whereby likewise each area of the surface 17 of the wafer 11 can be approached by the field of view 15.
  • the object table 29 and / or the objective 27 can also be adjustable in the vertical direction. Thereby, the distance of the lens 27 to the surface 17 of the wafer 11 can be changed. This is an advantage for adjusting the focus.
  • the controller 19 may control the position of the field of view 15 and / or the wafer 11 using the desired coordinates obtained from the defect data list 23 such that the field of vision 15 is gradually fed to the desired coordinates of each of the selected coordinates. chose defects 21 arrived. Based on the position of a respec conditions, detected in the field of view 15 defect 21, the controller can determine the actual coordinates of the respective defect 21. This can be done by image processing, which examines a captured image of the field of view 15 for defects 21. A de êt has different color or gray values in the image with respect to its environment, whereby the image processing can detect a defect in the image and determine its position. From this position, the control can then determine the actual coordinates of the defect 21 on the wafer surface 17, taking into account a predetermined coordinate system.
  • the image processing can be implemented in the controller 19 or the image pickup device 13.
  • the apparatus may perform on a wafer 11 a two-step process for accurately determining the coordinates of defects 21 on the surface 17 of the wafer 11.
  • the device is initially loaded by means of the loading device 33 with the wafer 11.
  • the wafer 11 is arranged in a specific position and orientation on the stage 29.
  • the De Stammda list 23 generated by another system is imported and stored on the memory 25.
  • the defect data list 23 is analyzed as to which defects 21 are as free-standing as possible and which can be filtered according to their size, in particular with respect to their expansion in the area, and optionally also after Defect type.
  • the defects 21 may be selected using a criterion. For example, in a first process stage, three or more of the largest of the freestanding defects 21 are selected from the defect data list 23. Freestanding defects are In this case, such defects 21, which should be alone, so without another defect in the field of view 15. A free-standing defect 21 thus has a minimum distance to its neighbors, which is dependent on the size of the field of view 15. Therefore, there may also be a dependence on the objective 27 used and / or focus adjustment, as these have effects on the field of view can.
  • the selected freestanding large defects 21 are gradually approached by moving the stage 29 and / or field of view 15.
  • the target coordinates taken from the defect data list 23 are used.
  • FIG. 2 shows the position of the field of view 15 at three different, gradually approached positions and thus at three selected defects 21. Since the desired coordinates were determined by another system and may be subject to measurement errors, the FIGS Target coordinates from the De Anlagenda list usually not the exact position of jewei time defect 21 on the surface 17 of the wafer 11 at. This is expressed in FIG. 2 in that the defects 21 do not lie exactly in the center of a field of view 15, or more generally of a detection area. In addition, the desired coordinates do not necessarily indicate the position of the center of the defect, but refer to any part of the defect. Furthermore, measurement errors can lead to the target coordinates relating to a location outside the defect. This can also mean that the the defect 21 is actually not located in the middle or even outside the field of view or detection area 15.
  • the controller 19 may be configured to detect the size of a defect 21 in the field of view 15. A verification can therefore to some extent take place as to whether a approached defect 21 actually corresponds to the defect from the defect data sheet 23 by comparing the size of the approached defect 21 with the size indicated in the defect data list 23.
  • the controller 19 is designed such that it can calculate back to the actual position of the defect 21 based on the position of the respective defect 21 in the field of view 15 and using a predetermined, defined coordinate system of the device, whereby the actual coordinates of the respective defect can be determined ,
  • the actual coordinates of the respective defect 21 can be stored on the memory 25.
  • the controller has thus received in the first pass for the selected large defects, the desired coordinates from the defect data list 23 and determines the actual coordinates.
  • the controller 19 may a first difference vector Dl between the target coordinates Sl, S2 of the first and second defect he average. Further, the controller 19 may determine a second difference vector D2 between the actual coordinates II, 12 of the first and second defects. The controller 19 can determine to which stretch factor of the second difference vector D2 respect. of the first difference vector Dl is stretched or compressed, and by what angle the second difference vector D2 is rotated by the first difference vector Dl. Furthermore, the controller 19 can determine a third difference vector D3, which the
  • Displacement or the difference between the actual coordinates II and target coordinates Sl of the first defect indicates.
  • a correction rule can be determined on the basis of which the (previously measured) actual position 12 of the second defect can be calculated. The process described above can be used for all pairs of
  • a corresponding third difference vector can be determined for each pair, which indicates the difference or displacement between the actual coordinates and desired coordinates of a defect of the respective pair of defects.
  • a Korrekturvor font eg using a statistical method, eg the Gauss-Newton method, are determined in a conventional manner.
  • the automatic procedure of the 1st process stage is repeated insofar as again three or more defects 21 are selected from the defect data list 23, driven on and found and confirmed in the visual field.
  • no large but small freestanding defects 21 are selected, which are preferably distributed over the entire surface 17.
  • a certain number of the smallest free defects 21 may be selected from the defect data list 23.
  • Such defects have the advantage that their size is not critical. An error that may result from a still remaining difference between the center of the defect 21 assumed in an image processing and the actual actual coordinate is small due to the smallness of the defect 21. The actual position and thus the exact actual coordinates of a respective selected small defect 21 can therefore be determined with high accuracy compared to the use of large defects.
  • the controller 19 gradually detects the selected small defects 21 and accumulates in the corresponding Wei se, as in the 1st process stage, their actual coordinates. In this case, the controller for starting up the small defects can use the new desired coordinates calculated by means of the previously determined correction rule.
  • a further correction prescription can be determined from the new desired coordinates and the actual coordinates for the small defects determined in the course of the second process step, which allows it in a more accurate manner, new target coordinates for so far to calculate unused defects.
  • their new, improved nominal coordinates can thus be determined on the basis of the correction rule determined in the context of the second process stage.
  • FIG. 3 illustrates this in that defects 21 can be approached so accurately on the basis of the new, improved nominal coordinates that they lie at least approximately in the middle of the field of view 15. A detailed examination and identification of the defects is possible, e.g. in a subsequent inspection under a microscope.
  • the method illustrated in a flowchart in FIG. 5 for the automatic inspection of a particular unstructured wafer comprises a step 401 in which a number of defects on the surface of a wafer as well as target coordinates belonging to each defect determine the position of the wafer indicate defects on the wafer surface, for example by selecting the defects from a plurality of defects from a defect data list.
  • step 403 a relative movement between a field of view of an image acquisition device and the wafer is controlled in such a way that the field of view is gradually fed to the target surface. Coordinates of each defect of the number of defects passes to detect the respective defect in the field of view.
  • step 405 the determination of the actual coordinates of a respective detected in the field of view defect based on its posi tion in the field of view.
  • the method for automatically inspecting an unstructured wafer includes step 501, wherein a first number of defects of prepared information about a plurality of defects on a surface of the wafer are selected such that the selected defects are freestanding and big defects are. Preferably, these defects are also selected so that they are distributed over the entire surface.
  • step 503 a relative movement between a field of view of an image capture device and the wafer is controlled in such a way that the visual field gradually arrives at the desired coordinates of each selected defect.
  • step 505 the actual coordinates of the respective defect are determined on the basis of the position of the respective defect in the field of view.
  • a second number of defects is selected from the information such that the selected defects are free-standing and small defects, and these defects are preferably also selected to be distributed over the entire surface.
  • step 509 new target coordinates for the defects of the second number of defects are calculated as a function of the determined actual coordinates and the desired coordinates of the first number of defects.
  • step 511 using the new target coordinates, the relative movement between the field of view and the wafer is controlled so that the field of view gradually passes to the new target coordinates of each of the defects of the second number of defects.
  • the actual coordinates of the respective defect are determined on the basis of the position of the respective defect in the field of view.
  • a correction rule is determined as a function of the determined actual coordinates and the new desired coordinates of the small detached defects, by means of which, starting from the desired coordinates of a new, previously not approached defect, more accurate, new desired coordinates this defect can be calculated.
  • This new defect can thus be approached using his calculated new target coordinates with higher accuracy and accuracy, which is for example advantageous if this defect is not a free-standing defect.
  • a pattern 37 for example by means of the computer program 35, can be generated as a function of a coordinate system KS to which the desired coordinates in the defect data list 23 relate.
  • the pattern 37 ent holds a plurality of rectangular or square, anei nander adjoining grid 39.
  • Each grid 39 preferably has the same height and width, as shown in FIG. 7.
  • Each coordinate of the coordinate system KS is assigned to a grid field.
  • the desired coordinates of each defect of the plurality of defects from the defect data list 23 can then be assigned to the corresponding grid in which the desired coordinate of the respective defect lies.
  • a defect can be identified on the basis of at least one predetermined criterion as a free-standing defect.
  • the defects in the grids 41, 43 and 45 are not considered free-standing defects.
  • the defect in the grid 47 is considered a freestanding defect.
  • the above description of the figures relates in particular to an apparatus and a method in which the sensor is an image acquisition device with a microscope.
  • the sensor is an image acquisition device with a microscope.
  • this is by no means restrictive. Rather, in the case of a device according to the invention or a method according to the invention, another type of image capture device or, more generally, another type of, in particular imaging, sensor may be used which, however, detects defects on the surface of a Wafers allow. Examples of these are sensors that detect the structure of the wafer surface using energy dis- Persian X-ray spectroscopy, ultrasonic waves or other known methods allow.

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Abstract

L'invention concerne un dispositif de contrôle, notamment automatique, d'une plaquette (11) notamment non structurée. Le dispositif comprend : un capteur (13), en particulier un dispositif de capture d'image, destiné à détecter une sous-région, située dans une région de détection (15) du capteur (13), de la surface (17) de la plaquette (11), la région de détection (15) et la plaquette (11) étant mobiles l'une par rapport à l'autre de sorte que chaque région de la surface de la plaquette (17) puisse être amenée dans la région de détection (15) par un mouvement relatif entre la région de détection (15) et la plaquette (11), une commande (19) conçue pour déterminer un nombre de défauts sur la surface (17) de la plaquette et les coordonnées de consigne associées à chaque défaut (21), lesquelles indiquent l'emplacement du défaut (21) sur la surface (17) de la plaquette et pour commander le mouvement relatif entre la région de détection (15) et la plaquette (11) de sorte que la région de dévement des coordonnées de consigne de chaque défaut (21) du nombre de défauts pour détecter le défaut respectif (21) dans la région de détection (15).
PCT/EP2019/055804 2018-03-08 2019-03-08 Dispositif et procédé de contrôle d'une plaquette WO2019170843A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018105396.7A DE102018105396A1 (de) 2018-03-08 2018-03-08 Vorrichtung und verfahren zur inspektion eines wafers
DE102018105396.7 2018-03-08

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PCT/EP2019/055892 WO2019170881A1 (fr) 2018-03-08 2019-03-08 Dispositif et procédé servant à inspecter une tranche

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US6407373B1 (en) * 1999-06-15 2002-06-18 Applied Materials, Inc. Apparatus and method for reviewing defects on an object
DE102007010225B4 (de) * 2007-02-28 2018-08-23 Vistec Semiconductor Systems Gmbh Verfahren zur Aufnahme von hochauflösenden Bildern von Defekten auf der Oberseite des Waferrandes
JP2016109485A (ja) * 2014-12-03 2016-06-20 株式会社日立ハイテクノロジーズ 欠陥観察方法及び欠陥観察装置
JP6475176B2 (ja) * 2016-02-25 2019-02-27 株式会社日立ハイテクノロジーズ 欠陥観察装置

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