WO2019156159A1 - Élément de conversion de longueur d'onde - Google Patents
Élément de conversion de longueur d'onde Download PDFInfo
- Publication number
- WO2019156159A1 WO2019156159A1 PCT/JP2019/004400 JP2019004400W WO2019156159A1 WO 2019156159 A1 WO2019156159 A1 WO 2019156159A1 JP 2019004400 W JP2019004400 W JP 2019004400W WO 2019156159 A1 WO2019156159 A1 WO 2019156159A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wavelength conversion
- conversion member
- single crystal
- crystal phosphor
- phosphor
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 96
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 119
- 239000002245 particle Substances 0.000 claims abstract description 75
- 238000009826 distribution Methods 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims description 107
- 239000000203 mixture Substances 0.000 claims description 28
- 230000005284 excitation Effects 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 24
- 238000005245 sintering Methods 0.000 description 19
- 238000000137 annealing Methods 0.000 description 18
- 230000007423 decrease Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000002490 spark plasma sintering Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009694 cold isostatic pressing Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000010298 pulverizing process Methods 0.000 description 6
- 238000007711 solidification Methods 0.000 description 6
- 230000008023 solidification Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Definitions
- the single crystal phosphor according to the present embodiment includes, for example, liquid phase growth such as CZ method (Czochralski method), EFG method (Edge Film Fed Growth Method), Bridgman method, FZ method (Floating Zone Method), and Bernoulli method. Can be obtained by law.
- the single crystal phosphor particles can be obtained by pulverizing the single crystal phosphor ingots obtained by the liquid phase growth method.
- the conventional YAG polycrystalline phosphor is a phosphor having a large particle size of about 15 to 20 ⁇ m or more because it synthesizes oxide powder raw materials such as Y 2 O 3 , Al 2 O 3 , and CeO 2 by solid phase reaction. Is difficult to manufacture.
- the single crystal YAG phosphor according to the present embodiment is produced by pulverizing an ingot of a single crystal phosphor that has been melt-grown, a particle having a particle size of 100 ⁇ m or more can be obtained.
- the single crystal phosphor particles are solidified by applying pressure (step S3).
- the solidification method is not particularly limited, and for example, an SPS (Spark Plasma Sintering) method, a CIP (Cold Isostatic Pressing) method, or the like can be used. Further, solidification may be performed by sheet molding or slip casting. When these methods are used, an organic binder is required to hold the particle group on the wafer, and this organic binder can be removed in the process.
- step S6 annealing treatment is performed on the sintered body of the particle group of the wafer-like single crystal phosphor.
- the temperature inside the carbon jig reached the target temperature of 1570 ° C. in about 10 minutes after the start of heating.
- a hole having a diameter of 1 mm and a depth of 2 mm is formed on the side surface of the carbon jig, and the temperature inside the carbon jig can be measured using a pyrometer.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
Abstract
L'invention concerne un élément de conversion de longueur d'onde dans lequel un luminophore est utilisé, l'élément de conversion de longueur d'onde ayant des caractéristiques de température exceptionnelles et des propriétés de dissipation de chaleur exceptionnelles, et ayant des caractéristiques de distribution de lumière approchant une distribution de lumière lambertienne. Dans un mode de réalisation de la présente invention, il est prévu un élément de conversion de longueur d'onde 1 comprenant un compact fritté d'un groupe de particules de phosphore monocristallin et ayant une forme prédéterminée.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-022273 | 2018-02-09 | ||
| JP2018022273A JP7224579B2 (ja) | 2018-02-09 | 2018-02-09 | 波長変換部材 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019156159A1 true WO2019156159A1 (fr) | 2019-08-15 |
Family
ID=67548289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2019/004400 WO2019156159A1 (fr) | 2018-02-09 | 2019-02-07 | Élément de conversion de longueur d'onde |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7224579B2 (fr) |
| WO (1) | WO2019156159A1 (fr) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5620562B1 (ja) * | 2013-10-23 | 2014-11-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
| JP2016084376A (ja) * | 2014-10-23 | 2016-05-19 | 国立研究開発法人物質・材料研究機構 | 単結晶蛍光体及び発光装置 |
| WO2017135373A1 (fr) * | 2016-02-02 | 2017-08-10 | 株式会社タムラ製作所 | Corps fluorescent et son procédé de production, élément contenant un corps fluorescent, et dispositif ou projecteur d'émission de lumière |
| WO2017154413A1 (fr) * | 2016-03-10 | 2017-09-14 | パナソニックＩｐマネジメント株式会社 | Dispositif électroluminescent |
| WO2017217486A1 (fr) * | 2016-06-16 | 2017-12-21 | 日本碍子株式会社 | Élément à luminophores et dispositif d'éclairage |
| WO2018225424A1 (fr) * | 2017-06-06 | 2018-12-13 | パナソニックＩｐマネジメント株式会社 | Convertisseur de longueur d'onde et son procédé de fabrication, et dispositif électroluminescent utilisant le convertisseur de longueur d'onde |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4649641B2 (ja) | 2004-11-26 | 2011-03-16 | 株式会社フジクラ | アルファサイアロン蛍光体とその製造方法、アルファサイアロン蛍光体原料粉末及び発光ダイオードランプ |
| JP5989268B2 (ja) | 2015-02-18 | 2016-09-07 | 日東電工株式会社 | 蛍光体セラミックス、封止光半導体素子、回路基板、光半導体装置および発光装置 |
| JP6094617B2 (ja) | 2015-03-31 | 2017-03-15 | ウシオ電機株式会社 | 蛍光光源装置 |
-
2018
- 2018-02-09 JP JP2018022273A patent/JP7224579B2/ja active Active
-
2019
- 2019-02-07 WO PCT/JP2019/004400 patent/WO2019156159A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5620562B1 (ja) * | 2013-10-23 | 2014-11-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
| JP2016084376A (ja) * | 2014-10-23 | 2016-05-19 | 国立研究開発法人物質・材料研究機構 | 単結晶蛍光体及び発光装置 |
| WO2017135373A1 (fr) * | 2016-02-02 | 2017-08-10 | 株式会社タムラ製作所 | Corps fluorescent et son procédé de production, élément contenant un corps fluorescent, et dispositif ou projecteur d'émission de lumière |
| WO2017154413A1 (fr) * | 2016-03-10 | 2017-09-14 | パナソニックＩｐマネジメント株式会社 | Dispositif électroluminescent |
| WO2017217486A1 (fr) * | 2016-06-16 | 2017-12-21 | 日本碍子株式会社 | Élément à luminophores et dispositif d'éclairage |
| WO2018225424A1 (fr) * | 2017-06-06 | 2018-12-13 | パナソニックＩｐマネジメント株式会社 | Convertisseur de longueur d'onde et son procédé de fabrication, et dispositif électroluminescent utilisant le convertisseur de longueur d'onde |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019139071A (ja) | 2019-08-22 |
| JP7224579B2 (ja) | 2023-02-20 |
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