WO2019109905A1 - 法珀传感器及其制造方法 - Google Patents

法珀传感器及其制造方法 Download PDF

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Publication number
WO2019109905A1
WO2019109905A1 PCT/CN2018/119136 CN2018119136W WO2019109905A1 WO 2019109905 A1 WO2019109905 A1 WO 2019109905A1 CN 2018119136 W CN2018119136 W CN 2018119136W WO 2019109905 A1 WO2019109905 A1 WO 2019109905A1
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Prior art keywords
pressure sensitive
base
fabry
pressure
cavity
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PCT/CN2018/119136
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English (en)
French (fr)
Inventor
张立喆
林春
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北京佰为深科技发展有限公司
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Application filed by 北京佰为深科技发展有限公司 filed Critical 北京佰为深科技发展有限公司
Priority to JP2020549854A priority Critical patent/JP6986790B2/ja
Priority to US16/770,381 priority patent/US11454558B2/en
Priority to EP18887156.0A priority patent/EP3722766B1/en
Publication of WO2019109905A1 publication Critical patent/WO2019109905A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0076—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means
    • G01L9/0077—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light
    • G01L9/0079—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light with Fabry-Perot arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G01L1/242—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet the material being an optical fibre
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
    • G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
    • G01L11/025—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means using a pressure-sensitive optical fibre
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
    • G02B6/29358—Multiple beam interferometer external to a light guide, e.g. Fabry-Pérot, etalon, VIPA plate, OTDL plate, continuous interferometer, parallel plate resonator
    • G02B6/29359—Cavity formed by light guide ends, e.g. fibre Fabry Pérot [FFP]

Definitions

  • the present invention relates to the field of sensors, and in particular to a Fabry-Perot sensor having a nonlinearly compensated design and optimized structure, and to a method of fabricating the same.
  • Fiber optic sensors have been widely used in various industries, such as petroleum, aerospace, aerospace, medical, marine, etc., and have demonstrated excellent performance, such as withstand harsh environments, resistant to electromagnetic radiation, anti-interference, passive explosion-proof, compact size
  • the utility model has the advantages of simple structure, large dynamic range, quasi-distribution measurement, and low material usage in the production process.
  • a fiber optic sensor employing the second technique may be referred to as a fiber Fabry-Perot sensor, or may be simply referred to as a Fabry-Perot sensor, a Fabry sensor, an FP sensor, etc., which is particularly suitable for use as a pressure sensor.
  • FIG. 7,689,071 B2 discloses a Fabry-Perot sensor for measuring pressure.
  • Figure 1 shows an exemplary illustration of such a prior Fabry-Perot sensor.
  • the Fabry sensor mainly comprises a glass base 1_6 having a cavity 1_5, a single-layer pressure sensitive diaphragm 1_4 fixed to the glass base 1_6, a first mirror 1-3 disposed at the bottom of the cavity of the glass base 1_6, and disposed at A second mirror 1_2 on the lower surface of the pressure sensitive diaphragm 1_4, and a bidirectional optical fiber 1_1 for conducting optical signals.
  • the first mirror 1_3, the second mirror 1_2, and the cavity 1_5 constitute a Fabry-Perot cavity. Since the length of the Fabry-Perot cavity is a clear function of the pressure, the pressure applied to the pressure sensitive diaphragm 1_4 can be known by knowing the length of the Fabry-Perot cavity.
  • the patent CN103534568B discloses a Fabry-Perot sensor for measuring pressure, which is optimized for sensitivity around a specific bias pressure.
  • Figure 2 shows a partial schematic view of a Fabry-Perot sensor as disclosed in the patent CN 103534568 B.
  • the Fabry sensor includes a base 2_1 and a pressure sensitive diaphragm mounted on the base.
  • the pressure sensitive diaphragm comprises a first layer 2_2 made of a first material, and a second layer 2_3 made of a second material and comprising internal stresses.
  • the second layer 2_3 is mounted on the first layer 2_2 such that the pressure sensitive diaphragm forms a two-layer structure.
  • the above-described Fabry-Perot sensor using a double-layer or multi-layer composite film structure still has several problems including, but not limited to, first, using an additional, stress-bearing structural layer to stretch the linear section of sensor sensitivity, making the pressure sensitive film
  • the sheet must be of a non-monolayer structure, increasing the complexity of the pressure-sensitive diaphragm structure; second, the multilayer film reduces the sensitivity of the overall sensor due to the increase in film thickness; third, the multilayer film
  • the long-term stability of the material itself also affects the long-term performance of the sensor.
  • the present invention designs a novel Fabry-Perot sensor that not only avoids the above problems existing in existing sensor designs, but also has other advantages as described below. .
  • the invention provides a Faber sensor comprising: a base; a cavity formed between the base and the pressure sensitive diaphragm, and closed by a base and a pressure sensitive diaphragm; the pressure sensitive diaphragm fixed to the a base, wherein the pressure-sensitive diaphragm has one or more partial regions, each of which has a doping substance doped into the base material of the pressure-sensitive diaphragm to generate stress, and any partial region does not penetrate the pressure sensitive The entire thickness of the diaphragm, the pressure sensitive diaphragm exhibits a wavy configuration under the stress; an optical fiber for conducting an optical signal, one end of the optical fiber being fixed to a fiber mounting portion of the base, the optical fiber mounting The portion is located at an end of the base opposite the cavity.
  • the pressure sensitive membrane is a unitary single layer structure.
  • the wavy configuration of the diaphragm is achieved by a specific doping method, which avoids the aforementioned problems in the prior art double-layer diaphragm structure and avoids the complicated technical steps of constructing the multilayer diaphragm structure.
  • the pressure sensitive membrane has a thickness of from 1 ⁇ m to 5 ⁇ m.
  • the base has a thickness of from 200 ⁇ m to 500 ⁇ m.
  • the cavity has a diameter of from 80 ⁇ m to 300 ⁇ m. That is, the technical solution defined by the present invention is particularly suitable for implementation in a microsensor.
  • the stress is a tensile stress.
  • the stress is a compressive stress.
  • the one or more partial regions comprise a substantially circular region at a central location of the pressure sensitive diaphragm.
  • the one or more partial regions comprise a generally annular region surrounding a central location of the pressure sensitive diaphragm.
  • the partial region is located in a partial thickness of the pressure sensitive membrane adjacent the cavity.
  • the partial region is located in a partial thickness of the pressure sensitive diaphragm away from the cavity.
  • different localized regions are doped with different dopant species.
  • different dopant species are doped in the same local region.
  • the base material of the pressure sensitive membrane is silicon.
  • the dopant material is one or more of the following materials: P, B, As, Al, Ga, Sb, Ge, O, Au, Fe, Cu, Ni, Zn, Mg.
  • the fiber is secured to the fiber receiving portion by UV glue.
  • the Fabry sensor further includes a first reflective film and a second reflective film, the first reflective film is located on one side of the pressure sensitive film, and the second reflective film is located at the bottom of the cavity.
  • the material forming the first reflective film and the second reflective film is at least one of the following: Cr, Ti, Au, Ag, TaN, Al 2 O 3 , Ta 2 O 5 .
  • the base forming material is at least one of the following: glass, single crystal silicon, silicon carbide, sapphire.
  • the cavity is a vacuum chamber.
  • the invention also proposes a method of manufacturing a Fabry sensor, comprising:
  • Manufacture pressure sensitive diaphragms including:
  • Step 1 providing a pressure sensitive membrane substrate for producing a pressure sensitive membrane
  • Step 2 doping one or more dopant species into one or more localized regions of the pressure sensitive membrane substrate to create stress in the localized region, any partial region not penetrating the pressure sensitive membrane Whole thickness
  • the pressure sensitive membrane is bonded to the base such that the cavity is closed by the pressure sensitive membrane and the base.
  • the pressure-sensitive membrane after the substance doping is integrated into a single-layer structure.
  • the pressure sensitive membrane has a thickness of from 1 ⁇ m to 5 ⁇ m, and the base has a thickness of from 200 ⁇ m to 500 ⁇ m.
  • the stress is a tensile stress.
  • the stress is a compressive stress.
  • the dopant species are doped together at the atomic or molecular level with the base material comprising the pressure sensitive membrane substrate.
  • the partial area is one or more substantially annular areas.
  • the partial area is one or more substantially circular areas.
  • the pressure sensitive diaphragm substrate is an SOI wafer.
  • the pressure sensitive membrane substrate is a silicon substrate having a silicon dioxide layer formed thereon.
  • the step 1 further comprises: washing and drying the pressure sensitive membrane substrate.
  • the step 2 further comprises: applying a photoresist to the pressure sensitive diaphragm substrate, and removing a portion of the photoresist to expose the localized region that needs to be doped.
  • step 2 the doping is carried out by means of high temperature diffusion.
  • the high temperature diffusion is specifically performing concentrated boron diffusion at a high temperature.
  • step 2 doping is performed by ion implantation.
  • one or more of B, P, and As are selected as the implanted ions during the ion implantation process.
  • the step of manufacturing the pressure sensitive membrane further comprises: step 3: after doping, cleaning the pressure sensitive membrane to remove impurities on the surface of the pressure membrane; and step 4: annealing the pressure sensitive membrane after cleaning .
  • the step of manufacturing the pressure sensitive membrane further comprises the step of: forming a first reflective film on one side of the pressure sensitive membrane by: evaporation, sputtering, chemical vapor deposition, electrochemistry, epitaxial growth .
  • the pressure sensitive membrane is bonded to the base in a vacuum environment.
  • the step of fabricating the base comprises: growing a mask on the base; applying a photoresist on the mask; removing a portion of the photoresist to expose a portion of the mask; and removing the exposed mask to expose the base a portion; etching the exposed base to form the cavity.
  • the step of fabricating the base further comprises: forming a second reflective film at the bottom of the cavity.
  • the step of fabricating the base further includes forming a fiber receiving portion at the bottom of the cavity.
  • the method further comprises: mounting the optical fiber to the fiber receiving portion of the base using UV glue.
  • the method further comprises removing the thick silicon layer and the silicon dioxide layer of the SOI after bonding the pressure sensitive film to the base.
  • the method further comprises: cutting the bonded pressure sensitive diaphragm and the base to form a plurality of Fabry sensors.
  • FIG. 1 is a schematic cross-sectional view of a certain Fabry-Perot sensor that has existed in the prior art
  • FIG. 2 is a partial schematic view of another Fabry-Perot sensor that has existed in the prior art
  • Figure 3 is a graph showing sensor sensitivity changes for different pressures when using the Fabry-Perot sensor shown in Figure 1;
  • FIG. 5A is a cross-sectional view of a Fabry-Perot sensor proposed by the present invention
  • FIG. 5B is a front view and a plan view of two different configurations of the Fabry-Perot sensor
  • 6A and 6B are schematic views of material doping at the center of a pressure sensitive diaphragm of a Fabry-Perot sensor
  • FIG. 7A and 7B are cross-sectional views of one embodiment of the Fabry-Perot sensor proposed by the present invention, showing a region in which the Fabry-Perot sensor is not doped with a substance when the external pressure is different, and is performed. Schematic diagram of the deformation of the material doped region;
  • Figure 8 is a schematic view showing the processing flow of the base of the Fabry-Perot sensor
  • FIG. 9 is a schematic view showing a processing flow of a pressure sensitive diaphragm of a Fabry-Perot sensor
  • Figure 10 is a schematic view of the base and the pressure sensitive membrane after vacuum bonding
  • Figure 11 is an embodiment of the Fabry-Perot sensor of the present invention, in which the cavity is formed in a pressure sensitive diaphragm;
  • 12A and 12B are two embodiments of the Fabry-Perot sensor of the present invention, which are doped in a shallow circular region on one side of the pressure-sensitive membrane;
  • 13A and 13B are two embodiments of the Fabry-Perot sensor of the present invention, which are doped in a shallow annular region on one side of the pressure-sensitive diaphragm;
  • 14A and 14B are two embodiments of the Fabry-Perot sensor proposed by the present invention, in which the concentric circular region and the annular region are doped with different substances in the pressure sensitive diaphragm;
  • Figure 15 is an illustration of one embodiment of the Fabry-Perot sensor of the present invention which is doped with oppositely stressed materials on both sides of the pressure sensitive diaphragm.
  • FIGS 5A-B and 10 show schematic views of the Faber sensor 11 of the present invention.
  • the Faber sensor 11 mainly comprises the following components: a base 6, a pressure sensitive diaphragm 4 fixed to the base 6, a cavity formed between the base 6 and the pressure sensitive diaphragm and closed by both The body 5, the first reflection film 2 and the second reflection film 3 respectively located on the pressure sensitive film 4 and the base 6, and the optical fiber 1 fixed to the base 6 for conducting an optical signal.
  • the cavity 5 can also be referred to as a Faber cavity.
  • the cavity 5 is disposed in the base 6.
  • the cavity 5 can also be machined in the pressure sensitive diaphragm 4 as in the embodiment shown in FIG.
  • the cavity 5 is formed in a vacuum state.
  • the cavity may be a cavity having a circular cross section as shown in Figure 5B. But it is not limited to this.
  • the thickness of the pressure sensitive film may be selected from 1 ⁇ m to 5 ⁇ m
  • the thickness of the base (which is indicated by H in Fig. 5B) may be selected from 200 ⁇ m to 500 ⁇ m.
  • the diameter can be selected from 80 ⁇ m to 300 ⁇ m.
  • the base 6 is preferably made of glass, but other materials such as, but not limited to, single crystal silicon, silicon carbide, sapphire, etc., may be used in order to achieve good light guiding properties. As shown in FIG. 5A, the base portion 6 includes a fiber receiving portion 15.
  • the first reflective film 2 and the second reflective film 3 may be selected from, but not limited to, Cr, Ti, Au, Ag, TaN, Al 2 O 3 , Ta 2 O 5 , a dielectric film, or the like.
  • the first reflective film 2 is located on the pressure-sensitive diaphragm 4, either on the side of the pressure-sensitive diaphragm 4 close to the cavity 5 or on the side of the pressure-sensitive diaphragm 4 away from the cavity 5.
  • the second reflective film 3 is located at the bottom of the cavity 5.
  • the optical fiber 1 is fixed to the base 6 at the fiber receiving portion 15, and may be selected from, but not limited to, a multimode quartz fiber 1.
  • the optical fiber 1 can be fixed by the UV glue 7. Since the UV glue 7 has both a bonding and a light guiding function, it can not only fix the function but also ensure good light guiding performance.
  • the pressure sensitive diaphragm 4 can be deformed toward or away from the base 6, thereby changing the length of the cavity 5 and the distance between the first reflective film 2 and the second reflective film 3, and thus for sensing the pressure.
  • the measurement light is introduced by the optical fiber 1 when the pressure measurement is performed. A part of the measurement light generates a partial reflection signal through the first reflection film 2, and the remaining light is reflected back to the first reflection film 2 via the second reflection film 3, and is superposed on the lower surface of the first reflection film 2.
  • the change in pressure from the outside causes the pressure sensitive diaphragm 4 to deform, changing the length of the cavity 5, thereby changing the optical path difference.
  • the deformation of the pressure sensitive diaphragm 4 can be obtained by demodulation.
  • the invention proposes a novel sensor design and manufacturing method, which adopts a material doping method to generate a local stress concentration region on the pressure sensitive diaphragm 4, and realizes a reduction sensor while maintaining a single layer pressure sensitive diaphragm structure.
  • the pressure sensitive diaphragm 4 having a stress concentration region will be described in more detail below.
  • the pressure-sensitive diaphragm 4 comprises a base material and has one or more partial regions 8, each of which has a doping substance doped into the base material of the pressure-sensitive diaphragm 4 to generate stress, any partial region 8
  • the entire thickness of the pressure sensitive diaphragm 4 is not penetrated.
  • the pressure-sensitive diaphragm 4 exhibits a wavy configuration under the action of the stress.
  • the doping of the material does not change the single layer structure of the membrane, ie the pressure sensitive membrane 4 is still a unitary single layer structure. This avoids the aforementioned problems in the prior art two-layer diaphragm structure and avoids the complicated technical steps of constructing the two-layer diaphragm structure.
  • the partial region 8 in which the substance is doped may also be referred to as a doped region.
  • the pressure sensitive diaphragm 4 By doping, an internal stress is generated in the doped region, the internal stress causing the pressure sensitive diaphragm 4 to exhibit an uneven undulating effect as shown in Figs. 12A-15, at least at a position intermediate the pressure sensitive diaphragm. A crest, and another annular trough that is radially separated from the crest.
  • the pressure sensitive diaphragms are all arched upward (i.e., away from the base) at a central position to form a crest, but the diaphragm may also be downward at the center (i.e.
  • a trough i.e., it may have a trough at a location intermediate the pressure sensitive diaphragm and another annular peak spaced radially from the trough.
  • the pressure sensitive diaphragm 4 can exhibit multiple crests and troughs.
  • the inventive solution solves the above problems, thereby improving performance.
  • the partial region 8 does not penetrate the entire thickness of the pressure sensitive diaphragm 4.
  • the partial region may be located in a portion of the thickness of the pressure-sensitive diaphragm 4 adjacent to the cavity 5, or in a portion of the thickness of the pressure-sensitive diaphragm 4 remote from the cavity 5, but not through the entire pressure-sensitive diaphragm 4.
  • Fig. 7A when the external pressure is small, the deformation of the region where the pressure-sensitive diaphragm 4 is not doped with the substance is relatively large, and the deformation of the region where the substance is doped is relatively small.
  • Fig. 7B when the external pressure is large, the deformation of the region where the pressure-sensitive diaphragm 4 is not doped with the substance is relatively small, and the deformation of the region where the substance is doped is relatively large.
  • the overall deformation displacement of the pressure sensitive diaphragm 4 is a composite result of both, so that the sensitivity nonlinearity problem can be improved.
  • the broken line shows the change in sensitivity when the Fabry-Perot sensor of the present invention is used, and the degree of nonlinearity is significantly reduced compared to the Fabry-Perot sensor without stress.
  • the base material constituting the pressure sensitive diaphragm 4 includes, but is not limited to, single crystal silicon.
  • the dopant material includes P, B, As, Al, Ga, Sb, Ge, O, Au, Fe, Cu, Ni, Zn, Mg, preferably boron.
  • the doping material can be divided into two types: the substitution type and the interstitial type, wherein the substitution type doping material is P, B, As, Al, Ga, Sb, Ge, etc., the gap-filling doping materials are O, Au, Fe, Cu, Ni, Zn, Mg, and the like.
  • the dopant species are doped at the atomic or molecular level with the base material constituting the pressure sensitive membrane substrate, as shown in Figures 6A-B.
  • Alternative doping methods include interstitial doping, direct exchange doping, vacancy doping, push-fill gap doping, extrusion doping, and Frank-Turnbull doping.
  • vacancy doping or push-fill gap doping is employed.
  • FIG. 6A shows vacancy diffusion in which the molecules or atoms of the doping material move at 9 in the vacancies of the molecules or atoms 10 of the base material, and the activation energy required for vacancy diffusion is relatively small, so the mode is easy to perform.
  • Figure 6B shows a push-fill gap diffusion in which the molecules or atoms 9 of the dopant material occupy another lattice position at which the molecules or atoms 10 of the base material are removed to the interstitial position and become self-filled.
  • the stress can be generated in the doped region due to molecular or interatomic forces.
  • the stress may be a tensile stress or a compressive stress.
  • the magnitude of the stress depends on the degree of mismatch of the crystal lattice and the concentration of the substance doping.
  • the doped region may be a substantially circular region at a central location of the pressure sensitive diaphragm 4, or may be a generally annular region surrounding the central location of the pressure sensitive diaphragm 4, or may have one or more concentric circular regions and rings simultaneously region. According to a possible embodiment, different doping materials may be present in different doped regions or different doping materials in the same doped region.
  • FIGS 12A-15 illustrate various possible embodiments of a Fabry sensor.
  • the circular region at the center position of the pressure-sensitive diaphragm 4 is doped with a substance which generates tensile stress, which is located in the upper portion of the pressure-sensitive diaphragm 4, without penetrating the pressure-sensitive diaphragm 4
  • the entire thickness As shown in Fig. 12A, the circular region at the center position of the pressure-sensitive diaphragm 4 is doped with a substance which generates tensile stress, which is located in the upper portion of the pressure-sensitive diaphragm 4, without penetrating the pressure-sensitive diaphragm 4 The entire thickness.
  • the annular region of the pressure sensitive diaphragm 4 of the Fabry-Perot sensor is doped with a compressive stress-producing substance which is located in the lower portion of the pressure-sensitive diaphragm 4 without penetrating the pressure-sensitive diaphragm. The entire thickness of 4.
  • the annular region of the pressure sensitive diaphragm 4 of the Fabry-Perot sensor is doped with a substance that generates compressive stress, which is located in the upper portion of the pressure-sensitive diaphragm 4, without penetrating the pressure-sensitive diaphragm.
  • the annular region of the pressure sensitive diaphragm 4 of the Fabry-Perot sensor is doped with a tensile stress-producing substance which is located in the lower portion of the pressure-sensitive diaphragm 4 without penetrating the pressure-sensitive diaphragm. The entire thickness of 4.
  • FIG. 14A the circular region in the lower portion of the pressure sensitive diaphragm 4 of the Fabry-Perot sensor is doped with a substance that generates compressive stress, and the annular region in the upper portion of the pressure-sensitive diaphragm 4 is doped to generate compressive stress.
  • the circular region in the upper portion of the pressure sensitive diaphragm 4 of the Fabry-Perot sensor is doped with a material that generates tensile stress
  • the annular region in the upper portion of the pressure-sensitive diaphragm 4 is doped with a substance that generates tensile stress.
  • the upper portion of the circular area of the pressure-sensitive diaphragm 4 is doped with a material that generates tensile stress, and the lower portion is doped with a substance that generates compressive stress, and the resultant force of the upper and lower regions is generated such that the center of the diaphragm is upward.
  • the force of the arch is not limited to a material that generates tensile stress, and the lower portion is doped with a substance that generates compressive stress, and the resultant force of the upper and lower regions is generated such that the center of the diaphragm is upward. The force of the arch.
  • the above-described Fabry-Perot sensor formed by material doping has many advantages, including but not limited to: by means of material doping, which can effectively weaken the sensor nonlinearity and improve the applicability of different ranges of the sensor; At the same time, the single-layer structure of the sensor diaphragm is ensured, and the above-mentioned problems caused by the double-layer structure in the prior art are avoided; in addition, since the doping method injects stress into the pressure-sensitive diaphragm, a more optimized wave deformation can be realized. , further weaken the nonlinearity. In addition, the above-mentioned Faber sensor has an advantage in terms of production methods. This will be described in detail below.
  • Figures 8 through 9 illustrate some of the steps of a preferred method of making the Fabry-Perot sensor 11 of the present invention.
  • the manufacture of the Faber sensor 11 can mainly include the steps of manufacturing the base 6, manufacturing the pressure sensitive diaphragm 4, bonding the base 6 to the pressure sensitive diaphragm 4, cutting, mounting the optical fiber 1, and the like, which will be described in detail below.
  • Step 1 A pressure sensitive membrane substrate for producing a pressure sensitive membrane 4 is provided.
  • the pressure sensitive membrane substrate ultimately forms the body portion of the pressure sensitive membrane 4.
  • multiple pressure sensitive membranes or multiple sensors can be fabricated at a time, i.e., the pressure sensitive membrane substrate will eventually be cut into a plurality of pressure sensitive membranes.
  • a silicon-on-insulator (SOI) wafer is utilized as the pressure sensitive diaphragm substrate.
  • the SOI wafer is thermally bonded by a thin silicon substrate 12 (which ultimately forms the body portion of the pressure sensitive diaphragm 4), a silicon dioxide layer 16 and a thick silicon layer 17 (or referred to as a handle layer).
  • SOI wafers having silicon substrates of different thicknesses are commercially available.
  • the pressure sensitive diaphragm substrate may also be a silicon substrate having a silicon oxide or silicon dioxide layer formed thereon. Specifically, after the silicon substrate is cleaned, a layer of silicon dioxide is formed on the silicon substrate by thermal oxidation growth.
  • the thermal oxidation process may be selected from, but not limited to, dry oxygen oxidation, water vapor oxidation, wet oxygen oxidation, H 2 and O 2 heating oxidation, RTO, and the like.
  • the following description is mainly made by taking the pressure sensitive diaphragm 4 using an SOI wafer as an example.
  • This step 1 can include cleaning the SOI wafer to remove wafer surface impurities.
  • the SOI wafer is dried.
  • prebaking is carried out at 100 ° C for 10 minutes.
  • a localized region of the pressure sensitive membrane substrate is doped with a substance to create stress in the localized region.
  • the step 2 may specifically include spin-coating the photoresist 14 on the SOI wafer and patterning it, that is, partially removing the photoresist to expose a localized region where dopant doping is required, as shown in FIG. Specifically, first, a portion of the thickness of the thick silicon layer 17 can be removed by grinding, followed by chemical etching with an EDP solution, and the silicon dioxide layer 16 serves as the first etching self-stop layer. Once the silicon oxide layer 16 is etched, the etching rate can be Reduce by 10,000 times or more. The silicon dioxide layer 16 can be removed by etching with a buffered HF solution.
  • the silicon substrate 12 (finally forming the pressure-sensitive diaphragm 4) may not be corroded in the HF solution, thus exposing the need for substance doping. Local area, as shown in Figure 9. If the pressure sensitive diaphragm substrate will eventually form only one pressure sensitive diaphragm, the partial region may comprise only one substantially circular region, one substantially annular region, or a combination of concentric circular regions and annular regions for Doping and eventually forming a wavy configuration of the diaphragm.
  • the pressure sensitive membrane substrate will eventually be cut into a plurality of pressure sensitive membranes, then in the step, a plurality of partial/local region combinations spaced apart from each other are simultaneously formed on the pressure sensitive membrane substrate. It is used to ultimately form a plurality of undulating regions that are ultimately cut into different pressure sensitive membranes.
  • precise control of the thickness of the pressure sensitive diaphragm 4 can also be achieved by grinding.
  • the exposed areas are doped with matter. Doping can be selected but not limited to high temperature diffusion and ion implantation.
  • the diffusion source can be selected but not limited to P , B, As, Al, Ga, Sb, Ge, O, Au, Fe, Cu, Ni, Zn, Mg.
  • concentrated boron diffusion or phosphorus diffusion is employed. The diffusion temperature, diffusion concentration, annealing temperature and other parameters in the diffusion process affect the sensitivity of the Fabry-Perot sensor.
  • the diffusion temperature is 900 ° C to 1200 ° C, and the concentration after diffusion is 10 17 to 10 21 /cm 3 ;
  • the diffusion temperature is 900 ° C to 1200 ° C, and the concentration after diffusion is 10 18 to 5 * 10 21 /cm 3 .
  • the silicon substrate 12 it is also possible to dope directly through a mask and a process such as photolithography and development.
  • B, P, and As can be used as the implant ions, and the ion source can be selected but not limited to BF 3 , PH 3 , AsH 3 , and the like.
  • the doping should be performed on a portion of the thickness of the pressure sensitive diaphragm 4.
  • the stress formed in the localized region 8 of the substrate of the pressure sensitive membrane 4 may be tensile or compressive.
  • step 3 after doping, the pressure sensitive diaphragm 4 is cleaned to remove surface impurities of the pressure sensitive diaphragm 4. The cleaning is carried out by the method in the above step 1.
  • step 4 the pressure-sensitive diaphragm 4 after cleaning is annealed to remove the damage of the pressure-sensitive diaphragm 4 caused by the doping process such as ion implantation, and the silicon crystal lattice is restored to its original perfect crystal structure, and the substance is allowed to enter. Electroactive position, ie the position of substitution.
  • High temperature annealing may be used but is not limited to thermal annealing, rapid thermal processing, rapid annealing, and the like.
  • the thermal annealing temperature is about 400 ° C ⁇ 1000 ° C
  • the rapid annealing temperature is about 600 ° C ⁇ 1100 ° C.
  • Step 5 as shown in FIG. 9, a reflective film 2 is grown on the bottom of the pressure sensitive diaphragm 4 after the dopant is used to form the cavity 5, and an optical reflection signal is obtained to form interference while avoiding pressure.
  • the inner and outer surfaces of the sensitive diaphragm 4 form a resonant cavity, and the method of growing the reflective film 2 can be selected from, but not limited to, evaporation, sputtering, chemical vapor deposition, electrochemistry, epitaxial growth, etc., and the reflective film 2 should be as thin as possible to cause stress.
  • it may be a metal layer, which may be selected from, but not limited to, Cr, Ti, Au, Ag, TaN, Al 2 O 3 , Ta 2 O 5 , dielectric film, etc., which has a high reflectance.
  • Step 1 Provide an untreated base.
  • the untreated base provided at this time will eventually be cut into a plurality of bases 6.
  • the base is preferably 200-500 ⁇ m thick.
  • the base 6 is cleaned to remove impurities on the surface of the substrate.
  • a mask 13 is grown on the base 6.
  • the method for growing the mask 13 may be selected from, but not limited to, evaporation, sputtering, chemical vapor deposition, electrochemistry, epitaxial growth, etc., and the mask 13 may be selected from, but not limited to, Au, Ag, Cr, Ti, Cu, W, TiN, TaN, Si 3 N 4 , SiON, SiGe, metal alloys, or a combination of several materials.
  • a chrome metal mask 13 having a thickness of 1000 angstroms is grown on the base 6.
  • Step 3 as shown in FIG. 8, a layer of photoresist 14 is spin-coated on the mask 13, and a portion of the photoresist 14 can be removed by exposure and development techniques well known to those skilled in the art to form an exposed region that satisfies a specific shape. .
  • the diameter of the cavity 5 can be of various sizes, it is preferable to select the cavity 5 having a diameter of about 80-300 ⁇ m, which can ensure good reflection of the pressure-sensitive diaphragm 4 and ensure the mechanical characteristics of the sensor. it is good.
  • the exposed mask 13 can be removed by a chromium etching solution consisting of HCl and glycerin, and the exposed mask 13 is removed to expose a portion of the base 6.
  • Step 4 as shown in Fig. 8, etches the base 6 to form a cavity 5.
  • Etching is optional but not limited to wet etching, dry etching.
  • Wet etching of chemical solutions can be used but not limited to HF, BOE solutions; dry etching can be used but not limited to sputtering and ion milling, plasma etching, reactive ion etching, HDP, ICP, ALE, ICP-RIE, HWP, ECR, sputtering and ion milling can be used but are not limited to inert gases (such as Ar), plasma etching can be used but not limited to fluorocarbons (eg CF 4 , CHF 3 , C 2 F 6 , C 3 F 8 Wait).
  • fluorocarbons eg CF 4 , CHF 3 , C 2 F 6 , C 3 F 8 Wait.
  • etch a cavity 5 having a diameter of 80 to 300 ⁇ m and a depth of about 19 ⁇ m with a buffered HF solution.
  • the buffered HF solution consisted of 3 ml of water, 2 g of NH 4 F mixed solution and 48% of HF solution in a 4:1 ratio.
  • the length of the cavity 5 in the base 6 should be controlled within a certain range to meet the requirements of optical interference strength. In the case of producing a plurality of sensors at a time, a plurality of cavities 5 are formed in the base at this time, and after the final cutting, each base will have only one cavity.
  • Step 5 in order to obtain a better optical contrast signal, a reflective film 3 is grown at the bottom of the cavity 5 as the first mirror of the cavity 5.
  • the method for growing the reflective film 3 may be selected from, but not limited to, evaporation, sputtering, chemical vapor deposition, electrochemistry, epitaxial growth, etc.
  • the material of the first mirror 3 may be different oxides, and may be selected from, but not limited to, Au, Ag. , Cr, TaN, Al 2 O 3 , Ta 2 O 5 , dielectric film, and the like.
  • the cleaning temperature is 120 ° C and the cleaning time is 10 minutes.
  • the base 6 can be prebaked at 100 ° C for 10 min to dry.
  • a fiber receiving portion 15 may be formed at the bottom of the base portion 6.
  • the manner in which the fiber receiving portion 15 is formed may be selected from, but not limited to, laser processing, wet etching, dry etching, and mechanical drilling.
  • the angle of the fiber receiving portion 15 may be greater than 15°.
  • a punching method may be omitted, but a glass capillary is applied as a bonding material to obtain a larger contact area with the optical fiber 1.
  • the bonding of the pressure sensitive diaphragm 4 to the base 6 is performed. Specifically, the following steps may be included.
  • step 1 the prepared pressure sensitive membrane 4 is bonded to the base 6 in a vacuum environment.
  • the pressure sensitive membrane 4 is aligned with the base 6 such that the cavity 5 is sealed by the pressure sensitive membrane 4 from the base 6.
  • the bonding method may be selected from, but not limited to, low temperature vacuum electrostatic bonding, glass paste bonding, anodic bonding, metal diffusion bonding, metal eutectic bonding, polymer adhesive bonding, plasma bonding, and the like. In this case, a low-temperature vacuum electrostatic bonding method or an anodic bonding method is preferably employed.
  • Step 2 removing the thick silicon layer 17 of the SOI and the silicon dioxide layer 16, specifically, the thick silicon layer 17 may be etched using potassium hydroxide or TMAH, and then the silicon dioxide layer 16 is then etched with hydrofluoric acid. After the thick silicon layer 17 and the silicon dioxide layer 16 are removed, the pressure sensitive film may exhibit a wavy configuration.
  • the cut form includes a quadrilateral, hexagonal or octagonal cut or the like as shown in Fig. 5B.
  • an ultraviolet 193 nm laser can be used for laser cutting to cut a circular piece.
  • the optical fiber 1 is aligned and fixed to the fiber receiving portion 15 of the base 6.
  • the optical fiber 1 is fixed by means of bonding and curing of the UV glue 7.
  • the curing method can be selected from but not limited to glass solder bonding, electromagnetic heating, laser heating, and laser welding.
  • the internal stress is formed by doping in a simple manner, and the doping method is simpler and easier to implement in terms of production operation than forming a multilayer structure, particularly a multilayer structure of a microsensor.
  • the Fabry-Perot sensor proposed by the present invention can be applied to various fields, for example, particularly suitable for use in the medical field. In addition, it can be used for other measurements.

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Abstract

一种法珀传感器（11）及其制造方法。法珀传感器（11）包括：基部（6）；腔体（5），形成在基部（6）和压力敏感膜片（4）之间，且由基部（6）和压力敏感膜片（4）封闭；压力敏感膜片（4），固定到基部（6），其中，压力敏感膜片（4）具有一个或多个局部区域（8），每一个局部区域（8）具有掺杂到压力敏感膜片（4）的基础材料中以产生应力的掺杂物质，任一局部区域（8）不贯穿压力敏感膜片（4）的整个厚度，压力敏感膜片（4）在应力的作用下呈现波状构造；光纤（1），用于传导光信号，光纤（1）的一个端部固定到基部（6）的光纤安装部，光纤安装部位于基部（6）的、与腔体（5）相对的端部处。

Description

法珀传感器及其制造方法 技术领域
本发明涉及传感器领域，特别地涉及一种具有非线性补偿设计和优化的结构的法珀传感器，并涉及其制造方法。
背景技术
光纤传感器已经广泛应用于各行各业，如石油、航空、航天、医疗、海洋等方面，且展现了优异的性能，例如具有耐受恶劣环境、耐电磁辐射、抗干扰、无源防爆、体积小巧、结构简单、动态范围大、能实现准分布测量、制作过程材料使用量少等优点。
光纤传感器比较成熟的技术主要有两种，一种是利用光纤光栅黏贴在受压模型上，通过模型受到压力后的形变来进行压力测量；另外一种是采用法布里-珀罗腔(或可简称为法珀腔、FP腔)技术，通过腔长度的变化来感测压力或温度。采用第二种技术的光纤传感器可称为光纤法布里-珀罗传感器，或可简称为法布里-珀罗传感器、法珀传感器、FP传感器等，其特别适于作为压力传感器使用。
专利US7689071B2公开了一种用于测量压力的法布里-珀罗传感器。附图1示出了这种现有的法布里-珀罗传感器的示例性图示。其中，该法珀传感器主要包括具有腔体1_5的玻璃基部1_6、固定到该玻璃基部1_6的单层压力敏感膜片1_4、设置在玻璃基部1_6的腔体底部的第一反射镜1_3、设置在压力敏感膜片1_4下表面的第二反射镜1_2，以及用于传导光学信号的双向光纤1_1。其中第一反射镜1_3、第二反射镜1_2以及腔体1_5构成法布里-珀罗腔。由于法布里-珀罗腔的长度是压力的明确函数，因此通过获知法布里-珀罗腔的长度即可获知施加到压力敏感膜片1_4的压力。
上述单质单晶薄膜结构的法珀传感器采用存在若干问题。如图3所示，随着压力的增加，其压力敏感膜片偏移量的增加明显减少，即压力敏感膜片 的偏移是所施加压力的非线性函数。由于压力敏感膜片的偏移在全压力量程中存在这种较强的非线性，因此在较高压力范围内法珀传感器的灵敏度受到限制。
针对上文所述的技术问题，专利CN103534568B公开了一种用于测量压力的法布里-珀罗传感器，其围绕特定偏压压力进行了灵敏度优化。附图2示出了该专利CN 103534568 B所公开的法布里-珀罗传感器的局部示意图。具体地，该法珀传感器包括基部2_1以及安装在该基部上的压力敏感膜片。该压力敏感膜片包括由第一材料制成的第一层2_2、和由第二材料制成且包括内部应力的第二层2_3。第二层2_3安装在该第一层2_2上，使得压力敏感膜片形成双层结构。
上述采用双层或更多层复合膜结构的法珀传感器仍然存在若干问题，包括但不限于，第一，利用额外的、存在应力的结构层来拉伸传感器灵敏度的线性段，使得压力敏感膜片必须为非单层结构，增加了压力敏感膜片结构的复杂度；第二，多层膜相比单层膜，由于膜厚的增加，会降低整体传感器的灵敏度；第三，多层膜材料自身长期稳定性也综合影响传感器的长期性能；第四，由于尺寸微小，在上述专利的制造方法中，为了将第二层增加到第一层上需要复杂的工艺和步骤，这增加了传感器的制造成本。
发明内容
着眼于现有传感器设计中存在的上述问题，本发明设计了一种新型的法布里-珀罗传感器，其不但能够避免现有传感器设计存在的上述问题，还具有下文中所述的其他优势。
本发明提出一种法珀传感器，包括：基部；腔体，形成在所述基部和压力敏感膜片之间，且由基部和压力敏感膜片封闭；所述压力敏感膜片，固定到所述基部，其中，所述压力敏感膜片具有一个或多个局部区域，每一个局部区域具有掺杂到压力敏感膜片的基础材料中以产生应力的掺杂物质，任一局部区域不贯穿压力敏感膜片的整个厚度，所述压力敏感膜片在所述应力的 作用下呈现波状构造；光纤，用于传导光信号，所述光纤的一个端部固定到基部的光纤安装部，所述光纤安装部位于基部的、与所述腔体相对的端部处。通过物质掺杂的方式，能够以有效的方式减弱传感器的非线性，提高传感器不同量程的适用性。
可选地，所述压力敏感膜片为一体的单层结构。通过特定的掺杂方式实现膜片的波状构造，既避免了现有技术中双层膜片结构中存在的前述诸多问题，又避免了构造多层膜片结构的复杂技术步骤。
可选地，所述压力敏感膜片的厚度为1μm至5μm。可选地，所述基部的厚度为200μm至500μm。可选地，所述腔体的直径为80μm至300μm。即，本发明所限定的技术方案特别适用于实施于微型传感器。
可选地，所述应力为拉应力。可选地，所述应力为压应力。
可选地，所述一个或多个局部区域包括位于压力敏感膜片中心位置处的大致圆形区域。可选地，所述一个或多个局部区域包括围绕压力敏感膜片中心位置的大致环形区域。
可选地，所述局部区域位于压力敏感膜片的靠近腔体的局部厚度中。可选地，所述局部区域位于压力敏感膜片的远离腔体的局部厚度中。
可选地，在不同的局部区域掺杂有不同的掺杂物质。可选地，在同一局部区域掺杂有不同的掺杂物质。
通过掺杂的方式在膜片中形成应力集中，并合理地设置应力类型以及集中的区域，能够形成优化且合理的波状结构，从而改善传感器性能。
可选地，所述压力敏感膜片的所述基础材料为硅。
可选地，所述掺杂物质为以下材料中的一种或多种：P、B、As、Al、Ga、Sb、Ge、O、Au、Fe、Cu、Ni、Zn、Mg。
可选地，所述光纤通过UV胶固定到光纤接收部。
可选地，所述法珀传感器还包括第一反射膜和第二反射膜，所述第一反射膜位于压力敏感膜片的一侧上，且第二反射膜位于所述腔体的底部。
可选地，形成所述第一反射膜和第二反射膜的材料为以下至少之一：Cr、 Ti、Au、Ag、TaN、Al2O3、Ta2O5。
可选地，所述形成基部的材料为以下至少之一：玻璃、单晶硅、碳化硅、蓝宝石。
可选地，所述腔体为真空腔。
本发明还提出一种制造法珀传感器的方法，包括：
制造压力敏感膜片，包括：
步骤1：提供用于生产压力敏感膜片的压力敏感膜片基材；
步骤2：将一种或多种掺杂物质掺杂到压力敏感膜片基材的一个或多个局部区域内，以在所述局部区域产生应力，任一局部区域不贯穿压力敏感膜片的整个厚度；
制造具有腔体的基部；
将压力敏感膜片与基部结合在一起，使得所述腔体被压力敏感膜片和基部封闭。
可选地，进行物质掺杂后的压力敏感膜片为一体的单层结构。
可选地，所述压力敏感膜片的厚度为1μm至5μm，所述基部的厚度为200μm至500μm。
可选地，所述应力为拉应力。可选地，所述应力为压应力。
可选地，在步骤2中，所述掺杂物质与构成压力敏感膜片基材的基础材料在原子或分子水平上掺杂在一起。
可选地，所述局部区域为一个或多个大致环形区域。可选地，所述局部区域为一个或多个大致圆形区域。
可选地，所述压力敏感膜片基材为SOI晶圆。
可选地，所述压力敏感膜片基材为其上形成有二氧化硅层的硅衬底。
可选地，所述步骤1还包括：对压力敏感膜片基材进行清洗和干燥。
可选地，所述步骤2还包括：对压力敏感膜片基材涂光刻胶，并去除部分光刻胶以暴露出需要进行掺杂的所述局部区域。
可选地，在步骤2中，掺杂通过高温扩散的方式进行。
可选地，所述高温扩散具体为在高温下进行浓硼扩散。
可选地，在步骤2中，掺杂通过离子注入的方式进行。
可选地，在所述离子注入过程中选用B、P、As中的一种或多种作为注入离子。
可选地，制造压力敏感膜片的步骤还包括：步骤3：在掺杂之后，对压力敏感膜片进行清洗，去除压力膜片表面杂质；步骤4：对清洗后的压力敏感膜片进行退火。
可选地，制造压力敏感膜片的步骤还包括步骤5：在压力敏感膜片一侧通过以下方式之一形成一层第一反射膜：蒸发、溅射、化学气相沉积、电化学、外延生长。
可选地，将压力敏感膜片在真空环境下结合到基部。
可选地，制造基部的步骤包括：在基部上生长一层掩膜；在掩膜上涂光刻胶；去除部分光刻胶，以暴露出部分掩模；去除暴露的掩膜，以暴露基部的一部分；刻蚀暴露的基部，以形成所述腔体。
可选地，制造基部的步骤还包括：在腔体底部形成一层第二反射膜。
可选地，制造基部的步骤还包括：在所述腔体底部形成光纤接收部。
可选地，方法还包括：使用UV胶将光纤安装到基部的光纤接收部。
可选地，方法还包括：在将压力敏感膜片结合到基部之后，去除SOI的厚硅层与二氧化硅层。
可选地，方法还包括：对结合在一起的压力敏感膜片与基部进行切割，以形成多个法珀传感器。
下文中将结合附图对实施本发明的最优实施例进行更详尽的描述，以便能容易地理解本发明的特征和优点。
附图说明
为了更清楚地说明本发明实施例的技术方案，下文中将对本发明实施例的附图进行简单介绍。其中，附图仅仅用于展示本发明的一些实施例，而非 将本发明的全部实施例限制于此。
图1是现有技术中已存在的某种法珀传感器的示意性横截面图；
图2是现有技术中已存在的另一种法珀传感器的局部示意图；
图3是在采用图1所示的法珀传感器时，针对不同压力的传感器灵敏度变化曲线；
图4是在采用本发明所提出的法珀传感器时，针对不同压力的传感器灵敏度变化曲线，且该曲线与采用传统法珀传感器时测量的曲线对比地给出；
图5A是本发明所提出的法珀传感器的横截面图，图5B是该法珀传感器的两种不同构造的正视图和俯视图；
图6A和6B是在法珀传感器的压力敏感膜片的中心进行物质掺杂的示意图；
图7A和7B是本发明所提出的法珀传感器的其中一个实施例的横截面图，其展示了该法珀传感器在外界压强不同时，压力敏感膜片未进行物质掺杂的区域和进行了物质掺杂的区域的形变示意图；
图8是法珀传感器的基部的加工流程示意图；
图9是法珀传感器的压力敏感膜片的加工流程示意图；
图10是基部和压力敏感膜片真空结合后的示意图；
图11是本发明所提出的法珀传感器的其中一个实施例，在该实施例中腔体形成在压力敏感膜片内；
图12A和12B是本发明所提出的法珀传感器的其中两个实施例，其在压力敏感膜片一侧较浅的圆形区域内进行了物质掺杂；
图13A和13B是本发明所提出的法珀传感器的其中两个实施例，其在压力敏感膜片一侧较浅的环形区域内进行了物质掺杂；
图14A和14B是本发明所提出的法珀传感器的其中两个实施例，该传感器的压力敏感膜片中，同心的圆形区域和圆环区域中掺杂有不同的物质；
图15是本发明所提出的法珀传感器的其中一个实施例，该传感器在压力敏感膜片两侧掺杂有应力相反的物质。
具体实施方式
为了使得本发明的技术方案的目的、技术方案和优点更加清楚，下文中将结合本发明具体实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。附图中相同的附图标记代表相同的部件。需要说明的是，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不必然表示数量限制。“包括”或者“包含”等类似的词语意指出现该词前面的元件或物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
除非上下文特别规定或明显说明，否则如本文所用的术语“大致”应理解为在本领域正常公差的范围之内。除非另有明确的上下文，本文提供的所有数值可通过术语“大致”来修正。
一、关于法珀传感器结构
图5A-B和10展示了本发明所提出的法珀传感器11的示意图。总体上，法珀传感器11主要包括如下部件：基部6、固定到所述基部6的压力敏感膜片4、形成在所述基部6和所述压力敏感膜片之间且由二者封闭的腔体5、分别位于压力敏感膜片4和基部6上的第一反射膜2和第二反射膜3，以及固定到所述基部6且用于传导光信号的光纤1。所述腔体5也可称为法珀腔。 在以图5A-B和图10为例的优选实施例中，所述腔体5设置在基部6中。替换地，如图11所示的实施例，还可以在压力敏感膜片4中加工出所述腔体5。通常，腔体5形成为真空状态。腔体可为横截面为圆形的腔体，如图5B所示。但不限于此。
本发明主要实施为微型传感器，例如，所述压力敏感膜片的厚度可选为1μm至5μm，所述基部的厚度(其在附图5B中以H表示)可选为200μm至500μm。对于圆形腔体，其直径可选为80μm至300μm。
所述基部6优选由玻璃制成，但还可以选用其他材料，例如但不限于单晶硅、碳化硅、蓝宝石等，以便实现良好的导光性能。如图5A所示，基部6包括光纤接收部15。
所述第一反射膜2和所述第二反射膜3可选用但不限于Cr、Ti、Au、Ag、TaN、Al 2O 3、Ta 2O 5、介质膜等。第一反射膜2位于压力敏感膜片4上，既可以位于压力敏感膜片4靠近腔体5的一侧，也可以位于压力敏感膜片4远离腔体5的一侧。第二反射膜3位于腔体5底部。
所述光纤1在光纤接收部15处固定到基部6，可以选用但不限于多模石英光纤1。优选地，可通过UV胶7固定光纤1，由于UV胶7同时具有黏结与导光功能，其不仅能起到固定作用，还可保障良好的导光性能。
随着压力的变化，压力敏感膜片4能够朝向或远离基部6发生形变，从而改变腔体5长度以及第一反射膜2和第二反射膜3之间的距离，进而用于感测压力。具体地，在进行压力测量时，测量光由光纤1引入。一部分测量光经第一反射膜2产生部分反射信号，其余的光经第二反射膜3反射回第一反射膜2，并在第一反射膜2的下表面叠加。外界的压力变化使压力敏感膜片4发生形变，改变腔体5的长度，从而改变光程差。通过检测经由光纤1传回的光信号，即可通过解调获得压力敏感膜片4形变的大小。
如前文所述，对于如图1中所示的现有的法珀传感器设计。压力敏感膜片4的形变呈现非常显著的非线性，特别是当压力敏感膜片4厚度较小，或压力量程较大时。该特性制约了传感器性能的提升，并限制了应用场合。而 对于如图2中所示的现有的法珀传感器设计，其虽然在非线性方面具有一定的改善，但其不得不增加额外的第二层，存在压力敏感膜片结构复杂、制造困难、整体灵敏性能降低、寿命降低等诸多问题。
为了改善如图1中所示的现有法珀传感器存在的严重非线性问题，且同时避免像图2中所示的现有法珀传感器那样牺牲结构、灵敏度和加工方法等方面的性能，本发明提出了一种新型的传感器设计和制造方法，其采用物质掺杂的方法在压力敏感膜片4上产生局部的应力集中区域，在维持单层压力敏感膜片结构的情况下实现了降低传感器非线性的目标。下文将对具有应力集中区域的压力敏感膜片4进行更详细介绍。
压力敏感膜片4包括基础材料，且具有一个或多个局部区域8，每一个局部区域8具有掺杂到压力敏感膜片4的基础材料中以产生应力的掺杂物质，任一局部区域8不贯穿压力敏感膜片4的整个厚度。所述压力敏感膜片4在所述应力的作用下呈现波状构造。材料的掺杂不改变膜片的单层结构，即压力敏感膜片4仍为一体的单层结构。这即避免了现有技术中双层膜片结构中存在的前述诸多问题，又避免了构造双层膜片结构的复杂技术步骤。进行了物质掺杂的所述局部区域8也可称为掺杂区域。
通过掺杂，在所述掺杂区域产生了内部应力，该内部应力使得压力敏感膜片4呈现如图12A-15所示的不平整的波状效果，至少具有位于压力敏感膜片中间位置处的一个波峰，以及在径向上与该波峰隔开的另一环状波谷。其中，在图12A-15所示的实施例中，压力敏感膜片均在中心位置向上(即远离基部)拱起以形成了波峰，但膜片亦可以在中心位置处向下(即朝向基部)拱起以形成波谷，即，其可具有位于压力敏感膜片中间位置处的一个波谷，以及在径向上与该波谷隔开的另一环状波峰。此外，压力敏感膜片4可以呈现多个波峰和波谷。
在试验中发现，通过局部区域掺杂而实现的波状压力敏感膜片相比于双层结构膜片而言随压力变化的线性度更好。尽管没有理论依据，对试验结果分析认为，原因首先可能在于单层膜片的更加优化的波状形状。一方面，通 过掺杂能够将应力注入在压力敏感膜片内部，而非像现有技术中双层结构那样仅将应力施加在膜片表面，从而膜片本身的波状变形形状更加易于控制，从而更易于实现更优化合理的波状构造，另一方面，由于不存在额外的层结构，其波状构造不受额外的层结构的限制或影响，即消除了影响优化的波状构造的因素。另外还可能存在的原因在于，双层结构的压力敏感膜片造成压力敏感膜片结构上的不均匀，在特定的膜片位置状态下，该结构上的不均匀会影响膜片对于压力的进一步响应，而发明的方案解决了上述问题，从而改善了性能。
为了在局部应力释放时膜片能产生图12A-15所示的波状构造，所述局部区域8不可贯穿压力敏感膜片4的整个厚度。具体地，所述局部区域可以位于压力敏感膜片4的靠近腔体5的部分厚度中、或压力敏感膜片4的远离腔体5的部分厚度中，但不贯穿整个压力敏感膜片4。
由于膜片的波状效果及其带来的应力效应，使压力敏感膜片4在同样受力情况下的非线性特性得到改善。如图7A所示，当外界压强较小时，压力敏感膜片4未进行物质掺杂的区域的形变相对较大，进行了物质掺杂的区域形变相对较小。如图7B，当外界压强较大时，压力敏感膜片4未进行物质掺杂的区域的形变相对较小，进行了物质掺杂的区域形变相对较大。压力敏感膜片4的整体形变位移是两者的复合结果，从而能够改善灵敏度非线性问题。如图4所示，虚线为采用本发明法珀传感器时的灵敏度变化，其相比于不具有应力的法珀传感器，非线性程度得到了明显降低。
构成压力敏感膜片4的基础材料包括但不限于单晶硅。所述掺杂材料包括P、B、As、Al、Ga、Sb、Ge、O、Au、Fe、Cu、Ni、Zn、Mg，优选为硼。其中，根据掺杂材料在半导体材料晶格中所处的位置，可将掺杂材料分为替位型和填隙型两类，其中替位型掺杂材料有P、B、As、Al、Ga、Sb、Ge等，填隙型掺杂材料有O、Au、Fe、Cu、Ni、Zn、Mg等。
掺杂时，掺杂物质与构成压力敏感膜片基材的基础材料在原子或分子水平上掺杂在一起，如图6A-B所示。可选的掺杂方式包括填隙掺杂、直接交 换式掺杂、空位掺杂、推填隙式掺杂、挤出式掺杂与Frank-Turnbull式掺杂。优选地，采用空位掺杂或推填隙式掺杂。其中，图6A展示了空位扩散，其中掺杂材料的分子或原子在9在基础材料的分子或原子10的空位移动，由于空位扩散需要的激活能比较小，因此该方式易于进行。图6B展示了推填隙式扩散，其中掺杂材料的分子或原子9占据另一个晶格位置，该晶格位置上的基础材料的分子或原子10被移开到填隙位置并成为自填隙分子或原子。由于分子或原子间作用力，在掺杂区域可产生所述应力。所述应力可以为拉应力，也可以为压应力。应力的大小取决于晶格的错配程度，以及物质掺杂的浓度。
在上述原理的基础上，掺杂区域的位置和应力的种类可以灵活地选择。掺杂区域可以为位于压力敏感膜片4中心位置处的大致圆形区域，或可为围绕压力敏感膜片4中心位置的大致环形区域，或同时存在一个或多个同心的圆形区域与环形区域。根据可行实施例，可以在不同的掺杂区域具有不同的掺杂材料，或在同一掺杂区域具有不同的掺杂材料。
图12A-15展示了法珀传感器的多个可行实施例。
如图12A所示，在压力敏感膜片4中心位置处的圆形区域掺杂了产生拉应力的物质，该圆环区域位于压力敏感膜片4的上部部分中，没有贯穿压力敏感膜片4的整个厚度。如图12B所示，在法珀传感器的压力敏感膜片4的圆环区域掺杂了产生压应力的物质，该圆形区域位于压力敏感膜片4的下部部分中，没有贯穿压力敏感膜片4的整个厚度。
如图13A所示，在法珀传感器的压力敏感膜片4的圆环区域掺杂了产生压应力的物质，该圆环区域位于压力敏感膜片4的上部部分中，没有贯穿压力敏感膜片4的整个厚度。如图13B所示，在法珀传感器的压力敏感膜片4的圆环区域掺杂了产生拉应力的物质，该圆环区域位于压力敏感膜片4的下部部分中，没有贯穿压力敏感膜片4的整个厚度。
如图14A-B所示，在圆形与圆环区域掺杂了不同的物质。其中，图14A中，在法珀传感器的压力敏感膜片4下部部分中的圆形区域掺杂了产生压应 力的物质，压力敏感膜片4上部部分中的圆环区域掺杂了产生压应力的物质。图14B中，在法珀传感器的压力敏感膜片4上部部分中的圆形区域掺杂了产生拉应力的物质，压力敏感膜片4上部部分中的圆环区域掺杂了产生拉应力的物质。
如图15所示，在压力敏感膜片4的圆形区域的上部部分掺杂产生拉应力的物质，下部部分掺杂产生压应力的物质，上下两个区域的合力会产生使得膜片中心向上拱起的力。
通过物质掺杂方式形成的上述法珀传感器具有多项优势，包括但不限于：通过物质掺杂的方式，能够有效地减弱传感器非线性，提高传感器不同量程的适用性；在减弱传感器非线性的同时，保证了传感器膜片的单层结构，避免现有技术中双层结构带来的上述诸多问题；另外，由于掺杂方式将应力注入在压力敏感膜片内部，能够实现更加优化的波状变形，又进一步减弱非线性。此外，上述法珀传感器还在生产方法方面具有优势。这将在下文中具体介绍。
二、关于法珀传感器的制造方法
图8到图9展示了制造本发明所述法珀传感器11的优选方法的一些步骤。法珀传感器11的制造主要可包括制造基部6、制造压力敏感膜片4、将基部6与压力敏感膜片4结合、切割、安装光纤1等步骤，下文中分别进行详细叙述。
需要说明的是，下文所列举的步骤是制造本发明所述传感器的优选步骤，而不一定是必要的步骤。在下文所述内容的基础上，本领域技术人员还可根据具体情况，更改或省略某一项具体操作、增加可以某一项具体操作、或对某一项或多项操作步骤进行顺序调整。
2.1、压力敏感膜片的制造
步骤1，提供用于生产压力敏感膜片4的压力敏感膜片基材。该压力敏感膜片基材最终形成压力敏感膜片4的主体部分。通常，一次可制造多个压 力敏感膜片或多个传感器，即该压力敏感膜片基材将最终可被切割成多个压力敏感膜片。
优选地，利用绝缘硅(SOI)晶圆作为压力敏感膜片基材。所述SOI晶圆通过薄的硅衬底12(其最终形成压力敏感膜片4的主体部分)、二氧化硅层16和厚硅层17(或称为手柄层)热键合在一起而构成，从市场上可以获得具有不同厚度硅衬底的SOI晶圆。
替代地，压力敏感膜片基材还可以选用其上形成有氧化硅或二氧化硅层的硅衬底。具体地，在将硅衬底清洗后，通过热氧化生长，在硅衬底上形成一层二氧化硅层。其中所述热氧化工艺可选用但不限于干氧氧化、水汽氧化、湿氧氧化、H 2和O 2加热氧化、RTO等。
下文中主要以采用SOI晶圆制造压力敏感膜片4为例进行描述。
该步骤1可包括对SOI晶圆进行清洗，以去除晶圆表面杂质。SOI晶圆的清洗步骤可包括以下步骤的一个或多个：选用H 2SO 4：H 2O＝4:1的混合溶液进行清洗，去除表面有机物，清洗温度为120℃，清洗时间10min；选用NH 4OH(28％)：H 2O 2(30％)：H 2O＝1:1:5的混合溶液去除表面微尘，清洗温度为80℃，清洗时间10min；选用HCl：H 2O 2：H 2O＝1:1:6的混合溶液去除表面金属离子，清洗温度为80℃，清洗时间10min；选用HF：H 2O＝1:50的混合溶液去除表面氧化层，清洗温度为室温。
清洗完毕后，干燥SOI晶圆。优选地，在100℃下预烘10分钟。
步骤2，对压力敏感膜片基材的局部区域进行物质掺杂，以在所述局部区域产生应力。
该步骤2具体可包括对SOI晶圆旋涂光刻胶14，并对其进行图形化操作，即，部分去除光刻胶以暴露出需要行物质掺杂的局部区域，如图9所示。具体地，首先可以通过研磨除去厚硅层17的一部分厚度，随后用EDP溶液进行化学腐蚀，二氧化硅层16作为第一个腐蚀自停止层，一旦腐蚀到二氧化硅层16，腐蚀速率可以减小10000倍以上。二氧化硅层16可以通过缓冲的HF溶液腐蚀去除。由于硅在HF溶液中的腐蚀速率比二氧化硅小10000 倍，所以硅衬底12(最终形成压力敏感膜片4)在HF溶液中可以不被腐蚀，这样便暴露出需要进行物质掺杂的局部区域，如图9所示。若该压力敏感膜片基材将最终仅形成一个压力敏感膜片，则局部区域可以仅包括一个大致圆形区域、一个大致环形区域、或同心的圆形区域与环形区域的组合，以用于掺杂以及最终形成膜片的波状构造。若该压力敏感膜片基材将最终会被切割成多个压力敏感膜片，则该步骤中在该压力敏感膜片基材上同时形成多个彼此间隔开的局部区域/局部区域组合，以用于最终形成多个波状区域，所述多个波状区域最终被切割到不同的压力敏感膜片中。
可选地，还可以通过研磨实现对压力敏感膜片4的厚度的精确控制。
其次，对暴露出的区域进行物质掺杂。掺杂可选用但不限于高温扩散、离子注入的方式。
对于高温扩散方式，可选用但不限于固态源扩散(如BN)、液态源扩散(如B、P)、气态源扩散、快速气相扩散、气体浸没激光扩散等，扩散源可选用但不限于P、B、As、Al、Ga、Sb、Ge、O、Au、Fe、Cu、Ni、Zn、Mg。根据优选的实施例，采用浓硼扩散或磷扩散。扩散工艺中的扩散温度、扩散浓度、退火温度等参数影响法珀传感器的灵敏度，优选在浓硼扩散中，扩散温度为900℃～1200℃，扩散后浓度为10 17～10 21/cm 3；磷扩散中，扩散温度为900℃～1200℃，扩散后浓度为10 18～5*10 21/cm 3。对于硅衬底12，还可以直接通过掩膜及光刻、显影等工艺进行掺杂。
对于离子注入方式，可选用但不限于B、P、As作为注入离子，离子源可选用但不限于BF 3、PH 3、AsH 3等。
如前文所述，掺杂应在压力敏感膜片4的部分厚度上进行。根据掺杂材料的不同，在压力敏感膜片4基材的局部区域8所形成的应力可为拉应力或压应力。
步骤3，在掺杂之后，对压力敏感膜片4进行清洗，去除压力敏感膜片4表面杂质。所述清洗采用上述步骤1中的方法进行。
步骤4，对清洗后的压力敏感膜片4进行退火，以去除由离子注入等掺 杂工艺造成的压力敏感膜片4的损伤，让硅晶格恢复其原有完美晶体结构，同时让物质进入电活性位置，即替位位置。高温退火可选用但不限于热退火、快速热处理、快速退火等。热退火温度在400℃～1000℃左右，快速退火温度在600℃～1100℃左右。
步骤5，如图9所示，在掺杂物质后的压力敏感膜片4底部生长一层反射膜2，以用于形成腔体5，获得光学反射信号，以便形成干涉，同时可以避免在压力敏感膜片4的内外表面形成谐振腔，生长反射膜2的方法可选用但不限于蒸发、溅射、化学气相沉积、电化学、外延生长等，此反射膜2应尽可能薄，产生应力影响尽可能小，可以是金属层，可选择但不限于Cr、Ti、Au、Ag、TaN、Al 2O 3、Ta 2O 5、介质膜等，其具有高的反射率。
2.2、基部的制造
步骤1，提供未经处理的基部。其中，对于一次生产多个传感器的情况，此时提供的未经处理的基部最终将被切割成多个基部6。基部优选200-500μm厚。清洗基部6以去除衬底表面杂质。清洗可选用H 2SO 4：H 2O＝4:1的混合溶液去除表面有机物，清洗温度为120℃，清洗时间10min。清洗完毕后，在100℃下预烘10min干燥基部6。
步骤2，如图8，在基部6上生长一层掩膜13。生长掩膜13的方法可选用但不限于蒸发、溅射、化学气相沉积、电化学、外延生长等，该掩膜13可选用但不限于Au、Ag、Cr、Ti、Cu、W、TiN、TaN、Si 3N 4、SiON、SiGe、金属合金，或几种材料的组合。优选地，在基部6上生长一层厚度为1000埃的铬金属掩膜13。
步骤3，如图8，在掩膜13上旋涂一层光刻胶14，可以通过本领域技术人员熟知的曝光、显影技术，去除光刻胶14的一部分，以形成满足特定形状的暴露区域。虽然腔体5的直径可以是各种尺寸的，但是优选地选择直径约为80-300μm的腔体5，其既可以保证压力敏感膜片4有良好的反射，还能保证传感器的机械特性较好。光刻胶14被部分去除后，可以通过铬腐蚀溶液去除暴露的掩膜13，铬腐蚀溶液由HCl和甘油组成，去除暴露的掩膜 13后暴露基部6的一部分。
步骤4，如图8，刻蚀基部6形成腔体5。刻蚀可选用但不限于湿法腐蚀、干法刻蚀。湿法腐蚀的化学溶液可选用但不限于HF、BOE溶液；干法刻蚀可选用但不限于溅射与离子铣、等离子刻蚀、反应离子刻蚀、HDP、ICP、ALE、ICP-RIE、HWP、ECR，溅射与离子铣可选用但不限于惰性气体(如Ar)，等离子刻蚀可选用但不限于含氟碳化物(例如CF 4、CHF 3、C 2F 6、C 3F 8等)。本例中，优选用缓冲的HF溶液腐蚀出直径80-300μm约19微米深的腔体5。缓冲的HF溶液由3ml的水、2g的NH 4F混合溶液和48％的HF溶液按照4:1的配比组成。基部6内的腔体5长度应控制在一定范围内，以满足光学干涉强度的要求。对于一次生产多个传感器的情况，此时在基部中形成多个腔体5，在最终切割后，每个基部将仅具有一个腔体。
步骤5，如图8，为了获得更好的光学对比度信号，在腔体5底部生长一层反射膜3作为腔体5的第一反射镜。生长反射膜3的方法可选用但不限于蒸发、溅射、化学气相沉积、电化学、外延生长等，该第一反射镜3的材料可以为不同的氧化物，可选用但不限于Au、Ag、Cr、TaN、Al 2O 3、Ta 2O 5、介质膜等。
步骤6，生长反射膜3后，可选用H 2SO 4：H 2O＝4:1的混合溶液清洗去除基部6表面有机物，优选地，清洗温度为120℃，清洗时间为10分钟。清洗完毕后，可将基部6在100℃下预烘10min，以进行干燥。
步骤7，为了便于光纤1对准与固定，可在基部6底部形成光纤接收部15。光纤接收部15的形成方式可选用但不限于：激光加工、湿法腐蚀、干法刻蚀、机械钻孔。光纤接收部15的夹角可以大于15°。替代地，为保证更大的粘接强度，可不采用打孔方式，而是套用玻璃毛细管做粘接材料，以获得与光纤1的更大接触面积。
2.3、压力敏感膜片4与基部6的结合
在根据上述步骤完成压力敏感膜片4与基部6的初步制造之后，进行压力敏感膜片4与基部6的结合。具体可包括如下步骤。
步骤1，将制备好的压力敏感膜片4与基部6在真空环境下结合。压力敏感膜片4与基部6被对准，使得腔体5被压力敏感膜片4与基部6密封。结合的方式可选择但不限于：低温真空静电键合、玻璃浆料键合、阳极键合、金属扩散键合、金属共晶键合、聚合物黏胶键合、等离子体键合等。在本例中，优选采用低温真空静电键合方式或阳极键合方式。
步骤2，去除SOI的厚硅层17与二氧化硅层16，具体地，可采用氢氧化钾或TMAH腐蚀厚硅层17，并随后然后用氢氟酸腐蚀二氧化硅层16。在厚硅层17与二氧化硅层16被去除后，压力敏感膜片可呈现出波状构造。
2.4切割
对于一次生产多个传感器的情况，需要对结合在一起的压力敏感膜片与基部进行切割。切割形式包括四边形、六边形或八边形切割等，如图5B所示。可选地，还可以采用紫外193nm激光器进行激光切割，划切出圆形片。
2.5安装光纤
光纤1对准并固定到基部6的光纤接收部15。优选地，使用UV胶7黏结固化的方式固定光纤1。所述固化方式可选用但不限于玻璃焊料黏结、电磁加热、激光加热、激光焊接。
上述方法具有多项优势，包括但不限于：
·可一次批量生产多件传感器，降低生产成本；
·传感器产品一致性好；
·通过对压力敏感膜片进行物质掺杂，在保证传感器的优化结构的同时，减小了传感器非线性，提高传感器不同量程的适用性；
·通过掺杂的方式形成内部应力，其操作方式简单，相比于形成多层该结构，特别是微型传感器的多层结构，掺杂的方式在生产操作方面更简单和易于实现。
本发明所提出的法珀传感器可以应用于多个领域，例如，特别适用于于医疗领域。此外，还可以用于其他测量。
上文中参照优选的实施例详细描述了本发明的示范性实施方式，然而本 领域技术人员可理解的是，在不背离本发明理念的前提下，可以对上述具体实施例做出多种变型和改型，且可以对本发明提出的各种技术特征、结构进行多种组合，而不超出本发明的保护范围，本发明的保护范围由所附的权利要求确定。
附图标记列表
1_1 光纤
1_2 第一反射膜
1_3 第二反射膜
1_4 压力敏感膜片
1_5 腔体
1_6 基部
1_7 UV胶
2_1 基部
2_2 压力敏感膜片的第一层
2_3 压力敏感膜片的第二层
1 光纤
2 第一反射膜
3 第二反射膜
4 压力敏感膜片
5 腔体
6 基部
7 UV胶
8 局部区域
9 基础材料的分子或原子
10 掺杂材料的分子或原子
11 法珀传感器
12 硅衬底
13 掩膜
14 光刻胶
15 光纤接收部
16 二氧化硅层
17 厚硅层

Claims (45)

  1. 一种法珀传感器，包括：
    基部；
    腔体，形成在所述基部和压力敏感膜片之间，且由基部和压力敏感膜片封闭；
    所述压力敏感膜片，固定到所述基部，其中，所述压力敏感膜片具有一个或多个局部区域，每一个局部区域具有掺杂到压力敏感膜片的基础材料中以产生应力的掺杂物质，任一局部区域不贯穿压力敏感膜片的整个厚度，所述压力敏感膜片在所述应力的作用下呈现波状构造；
    光纤，用于传导光信号，所述光纤的一个端部固定到基部的光纤安装部，所述光纤安装部位于基部的、与所述腔体相对的端部处。
  2. 如权利要求1所述的法珀传感器，其中，所述压力敏感膜片为一体的单层结构。
  3. 如权利要求1所述的法珀传感器，其中，所述压力敏感膜片的厚度为1μm至5μm。
  4. 如权利要求1所述的法珀传感器，其中，所述基部的厚度为200μm至500μm。
  5. 如权利要求1所述的法珀传感器，其中，所述腔体的直径为80μm至300μm。
  6. 如权利要求1所述的法珀传感器，其中，所述应力为拉应力。
  7. 如权利要求1所述的法珀传感器，其中，所述应力为压应力。
  8. 如权利要求1所述的法珀传感器，其中，所述一个或多个局部区域包括位于压力敏感膜片中心位置处的大致圆形区域。
  9. 如权利要求1所述的法珀传感器，其中，所述一个或多个局部区域包括围绕压力敏感膜片中心位置的大致环形区域。
  10. 如权利要求1所述的法珀传感器，其中，所述局部区域位于压力敏感膜片的靠近腔体的局部厚度中。
  11. 如权利要求1所述的法珀传感器，其中，所述局部区域位于压力敏感膜片的远离腔体的局部厚度中。
  12. 如权利要求1所述的法珀传感器，其中，在不同的局部区域掺杂有不 同的掺杂物质。
  13. 如权利要求1所述的法珀传感器，其中，在同一局部区域掺杂有不同的掺杂物质。
  14. 如权利要求1所述的法珀传感器，其中，所述压力敏感膜片的所述基础材料为硅。
  15. 如权利要求1所述的法珀传感器，其中，所述掺杂物质为以下材料中的一种或多种：P、B、As、Al、Ga、Sb、Ge、O、Au、Fe、Cu、Ni、Zn、Mg。
  16. 如权利要求1所述的法珀传感器，其中，所述光纤通过UV胶固定到光纤接收部。
  17. 如权利要求1所述的法珀传感器，其中，所述法珀传感器还包括第一反射膜和第二反射膜，所述第一反射膜位于压力敏感膜片的一侧上，且第二反射膜位于所述腔体的底部。
  18. 如前一权利要求所述的法珀传感器，其中，形成所述第一反射膜和第二反射膜的材料为以下至少之一：Cr、Ti、Au、Ag、TaN、Al 2O 3、Ta 2O 5。
  19. 如权利要求1所述的法珀传感器，其中，所述形成基部的材料为以下至少之一：玻璃、单晶硅、碳化硅、蓝宝石。
  20. 如权利要求1所述的法珀传感器，其中，所述腔体为真空腔。
  21. 一种制造法珀传感器的方法，包括：
    制造压力敏感膜片，包括：
    步骤1：提供用于生产压力敏感膜片的压力敏感膜片基材；
    步骤2：将一种或多种掺杂物质掺杂到压力敏感膜片基材的一个或多个局部区域内，以在所述局部区域产生应力，任一局部区域不贯穿压力敏感膜片的整个厚度；
    制造具有腔体的基部；
    将压力敏感膜片与基部结合在一起，使得所述腔体被压力敏感膜片和基部封闭。
  22. 如权利要求21所述的方法，其中，进行物质掺杂后的压力敏感膜片为一体的单层结构。
  23. 如权利要求21所述的方法，其中，所述压力敏感膜片的厚度为1μm至5μm，所述基部的厚度为200μm至500μm。
  24. 如权利要求21所述的方法，其中，所述应力为拉应力。
  25. 如权利要求21所述的方法，其中，所述应力为压应力。
  26. 如权利要求21所述的方法，其中，在步骤2中，所述掺杂物质与构成压力敏感膜片基材的基础材料在原子或分子水平上掺杂在一起。
  27. 如权利要求21所述的方法，其中，所述局部区域为一个或多个大致环形区域。
  28. 如权利要求21所述的方法，其中，所述局部区域为一个或多个大致圆形区域。
  29. 如权利要求21所述的方法，其中，所述压力敏感膜片基材为SOI晶圆。
  30. 如权利要求21所述的方法，其中，所述压力敏感膜片基材为其上形成有二氧化硅层的硅衬底。
  31. 如权利要求21所述的方法，其中，所述步骤1还包括：对压力敏感膜片基材进行清洗和干燥。
  32. 如权利要求21所述的方法，其中，所述步骤2还包括：对压力敏感膜片基材涂光刻胶，并去除部分光刻胶以暴露出需要进行掺杂的所述局部区域。
  33. 如权利要求21所述的方法，其中，在步骤2中，掺杂通过高温扩散的方式进行。
  34. 如前一权利要求所述的方法，其中，所述高温扩散具体为在高温下进行浓硼扩散。
  35. 如权利要求21所述的方法，其中，在步骤2中，掺杂通过离子注入的方式进行。
  36. 如前一权利要求所述的方法，其中，在所述离子注入过程中选用B、P、As中的一种或多种作为注入离子。
  37. 如权利要求21所述的方法，其中，制造压力敏感膜片的步骤还包括：
    步骤3：在掺杂之后，对压力敏感膜片进行清洗，去除压力膜片表面杂质；
    步骤4：对清洗后的压力敏感膜片进行退火。
  38. 如权利要求21所述的方法，其中，制造压力敏感膜片的步骤还包括：
    步骤5：在压力敏感膜片一侧通过以下方式之一形成一层第一反射膜：蒸发、溅射、化学气相沉积、电化学、外延生长。
  39. 如权利要求21所述的方法，其中，将压力敏感膜片在真空环境下结合到基部。
  40. 如权利要求21所述的方法，其中，制造基部的步骤包括：
    在基部上生长一层掩膜；
    在掩膜上涂光刻胶；
    去除部分光刻胶，以暴露出部分掩模；
    去除暴露的掩膜，以暴露基部的一部分；
    刻蚀暴露的基部，以形成所述腔体。
  41. 如权利要求21所述的方法，其中，制造基部的步骤还包括：在腔体底部形成一层第二反射膜。
  42. 如权利要求21所述的方法，其中，制造基部的步骤还包括：在所述腔体底部形成光纤接收部。
  43. 如前一权利要求所述的方法，还包括：使用UV胶将光纤安装到基部的光纤接收部。
  44. 如权利要求29所述的方法，还包括：在将压力敏感膜片结合到基部之后，去除SOI的厚硅层与二氧化硅层。
  45. 如权利要求21所述的方法，还包括：对结合在一起的压力敏感膜片与基部进行切割，以形成多个法珀传感器。
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