WO2019105014A1 - 阵列基板及其制造方法及显示屏 - Google Patents

阵列基板及其制造方法及显示屏 Download PDF

Info

Publication number
WO2019105014A1
WO2019105014A1 PCT/CN2018/092036 CN2018092036W WO2019105014A1 WO 2019105014 A1 WO2019105014 A1 WO 2019105014A1 CN 2018092036 W CN2018092036 W CN 2018092036W WO 2019105014 A1 WO2019105014 A1 WO 2019105014A1
Authority
WO
WIPO (PCT)
Prior art keywords
flexible substrate
inorganic film
film layer
array substrate
groove
Prior art date
Application number
PCT/CN2018/092036
Other languages
English (en)
French (fr)
Inventor
李瑶
Original Assignee
昆山国显光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Priority to US16/342,197 priority Critical patent/US11227877B2/en
Publication of WO2019105014A1 publication Critical patent/WO2019105014A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate

Definitions

  • the present application relates to the field of display technologies, and in particular to an array substrate, a method of manufacturing the same, and a display screen.
  • the display includes a display area (AA area) and a non-display area (non-AA area).
  • the non-display area may be required to be bent.
  • the non-display area is bent to the back of the screen to reduce the width of the frame.
  • An array substrate includes a display area and a non-display area located outside the display area;
  • the non-display area includes:
  • the flexible substrate surface is provided with a plurality of grooves, and an area between the adjacent grooves on the flexible substrate is a routing area;
  • An inorganic film layer including a first inorganic film layer formed in the wiring region, and a second inorganic film layer formed on a bottom wall of the groove, the second inorganic film layer
  • the first inorganic film layer is broken by the sidewall of the groove;
  • the surface of the flexible substrate is provided with a groove, so that the inorganic film layer can be broken to form the first inorganic film layer and the second inorganic film layer, wherein the first inorganic film layer is located in the routing region, and the second inorganic film layer
  • the bottom wall of the groove can separate the inorganic film layer into a plurality of independent parts when the inorganic film layer is deposited, thereby reducing the bending stress of the inorganic film layer when the non-display area is bent, and effectively avoiding the inorganic film.
  • the breakage of the layer thereby effectively avoiding the breakage of the peripheral metal traces and improving the reliability of the array substrate.
  • the angle between the side wall of the groove and the bottom wall of the groove is less than 90 degrees.
  • the groove has an isosceles trapezoidal cross section.
  • the side wall of the groove has a circular arc shape. In one of the embodiments, the groove has a depth greater than 1 micron.
  • a protective layer formed on the surface of the peripheral metal trace is further included.
  • the flexible substrate comprises a flexible substrate body layer and a flexible substrate skin layer.
  • the groove extends through the flexible substrate skin.
  • the width of the first film layer is greater than the width of the peripheral metal traces.
  • the thickness of the flexible substrate skin is equal to the depth of the groove.
  • the flexible substrate skin layer is a patterned flexible substrate skin layer, the hollow region of the flexible substrate skin layer and the flexible substrate body layer forming the groove.
  • the application also provides a display screen.
  • a display screen comprising the array substrate provided by the present application.
  • the display screen includes the array substrate provided by the present application.
  • the structure of the non-display area of the array substrate can effectively prevent the breakage of the peripheral metal traces, thereby better ensuring the transmission of signals and prolonging the service life of the display.
  • the application also provides a method of manufacturing an array substrate.
  • a peripheral metal trace is formed on the surface of the first inorganic film layer.
  • the operation of forming the recess on the flexible substrate is:
  • a patterned flexible substrate skin layer is formed on the flexible substrate body layer such that the hollow region of the flexible substrate skin layer and the flexible substrate body layer constitute the groove.
  • the array substrate prepared by the above method for manufacturing the array substrate can directly divide the inorganic film layer into a plurality of independent portions when depositing the inorganic film layer, thereby reducing the bending stress of the inorganic film layer when the non-display region is bent. , effectively avoiding the breakage of the inorganic film layer, thereby effectively avoiding the breakage of the peripheral metal traces.
  • FIG. 1 is a schematic structural view of an array substrate according to Embodiment 1 of the present application.
  • FIG. 2 is a schematic cross-sectional view showing a non-display area of the array substrate shown in FIG. 1.
  • FIG 3 is a schematic cross-sectional view showing a non-display area of an array substrate according to Embodiment 2 of the present application.
  • the array substrate 300 provided in the first embodiment of the present application includes a display area 310 and a non-display area 320 located outside the display area.
  • the display area 310 (ie, the AA area) is an area corresponding to the pixel unit in the array substrate 100, and the display area 310 is provided with an electronic component for driving the pixel unit such as a thin film transistor and a capacitor.
  • the specific structure of the display area 310 is not particularly limited, and various structures that are suitable for those skilled in the art may be employed, and details are not described herein again.
  • the non-display area 320 (ie, the non-AA area) is located on the side of the display area 310.
  • the non-display area 320 may also exist at other locations outside the display area 310.
  • the non-display area 320 includes a flexible substrate 321, an inorganic film layer 323, and peripheral metal traces 325.
  • the flexible substrate 321 includes one or more flexible substrates.
  • the surface of the flexible substrate 321 is provided with a plurality of grooves 3211, and a region between adjacent grooves 3211 on the flexible substrate 321 is a wiring region 3213.
  • the inorganic film layer 323 includes a first inorganic film layer 3231 simultaneously formed in the wiring region 3213, and a second inorganic film layer 3233 formed on a bottom wall of the groove 3211.
  • the second inorganic film layer 3233 and the first inorganic film layer 3231 are disconnected by the sidewall of the groove 3211.
  • a peripheral metal trace 325 is formed on the surface of the first inorganic film layer 3231.
  • the second inorganic film layer 3233 and the first inorganic film layer 3231 are disconnected by the sidewall of the groove 3211.
  • the inorganic film layer 323 is divided into a plurality of mutually independent portions, thereby reducing the bending stress of the inorganic film layer 323 when the non-display region 320 is bent, effectively avoiding the breakage of the inorganic film layer 323, thereby effectively avoiding the peripheral metal traces.
  • the breakage of 325 improves the reliability of the array substrate 300.
  • the side wall of the recess 3211 has a wall section that is recessed toward the outside of the recess 3211.
  • the side wall of the recess 3211 is an inclined wall or the side wall of the recess 3211 has an arc shape or the like.
  • the angle between the sidewall of the recess 3211 and the bottom wall of the recess 3211 is less than 90 degrees, that is, the sidewall of the recess 3211 is an inclined wall that is recessed toward the outside of the recess 3211.
  • This type of scheme is simple in structure and easy to implement.
  • the cross section of the recess 3211 is an isosceles trapezoid, that is, the cross section of the recess 3211 perpendicular to the extending direction of the recess 3211 is an isosceles trapezoid. The bending stress when the non-display area 320 is bent is made uniform, and the phenomenon of stress concentration is avoided.
  • the depth of the groove 3211 is larger than the thickness of the inorganic film layer 323, so that when the inorganic film layer 323 is deposited, the first inorganic film layer 3231 and the second inorganic film layer 3233 are broken by the side walls of the groove 3211.
  • the depth of the groove 3211 is greater than 1 micrometer, so that sufficient bending stress of the inorganic film layer can be released, ensuring prevention of breakage of the inorganic film layer.
  • the grooves 3211 are evenly distributed, and the grooves 3211 are the same in size, which is convenient for processing.
  • the distribution of the grooves 3211 may be uneven as needed, and the sizes of the grooves 3211 may not be identical.
  • the width of the first inorganic film layer 3231 is greater than or equal to the width of the peripheral metal trace 325, so that the peripheral metal trace 325 can be completely located on the first inorganic film layer 3231 without passing through the recess 3211, thereby not
  • the climbing phenomenon of the peripheral metal trace 325 causes the peripheral metal trace 325 to be broken, thereby ensuring the reliability of signal transmission.
  • the non-display area 320 of the array substrate 300 further includes a protective layer formed on the surface of the peripheral metal trace 325 to prevent the peripheral metal trace 325 from contacting with water oxygen, thereby causing the peripheral metal trace 325 to be oxidized.
  • the array substrate provided in the second embodiment of the present application is different from the array substrate 300 in that the flexible substrate 331 includes a flexible substrate body layer 3315 and a flexible substrate surface layer 3317.
  • the groove 3311 penetrates through the flexible substrate skin 3317.
  • the flexible substrate body layer 3315 includes one or more flexible substrates
  • the flexible substrate skin layer 3317 includes one or more flexible substrates.
  • the thickness of the flexible substrate skin layer 3317 can be controlled to be equal to the depth of the groove 3311 so that the patterned flexible substrate surface layer 3317 can be formed on the surface of the flexible substrate body layer 3315 to make the flexible substrate skin layer 3317
  • the hollow region and the flexible substrate body layer 3315 constitute a recess 3311.
  • the depth of the groove 3311 can also be larger or smaller than the thickness of the flexible substrate surface layer 3317 as long as the etching depth is precisely controlled. However, it is necessary to ensure that the depth of the groove 3311 is larger than the thickness of the inorganic film layer, so that when the inorganic film layer is deposited, the first inorganic film layer of the wiring region and the second inorganic film layer of the bottom wall of the groove 3311 are surrounded by the groove 3311. The side walls are broken.
  • the application provides a display screen comprising the array substrate provided by the present application.
  • the display screen includes other devices in addition to the array substrate, and the specific structures of other devices and the connection relationship between the devices may adopt structures well known to those skilled in the art, and details are not described herein again.
  • the structure of the non-display area of the array substrate provided by the present application can effectively prevent the breakage of the peripheral metal traces, thereby better ensuring the transmission of signals and prolonging the service life of the display.
  • the present application provides a method of fabricating an array substrate.
  • the manufacturing method of the non-display area of the array substrate specifically includes the following steps:
  • the groove may be formed directly on the surface of the flexible substrate by etching or the like.
  • the flexible substrate comprises a flexible substrate body layer and a flexible substrate skin layer.
  • the flexible substrate body layer includes at least one layer of flexible substrate;
  • the flexible substrate skin layer includes at least one layer of flexible substrate.
  • the operation of forming a plurality of grooves on the surface of the flexible substrate is:
  • a patterned flexible substrate skin layer is formed on the flexible substrate body layer such that the hollow regions of the flexible substrate skin layer and the flexible substrate body layer form grooves.
  • a patterned flexible substrate skin layer may be formed on the flexible substrate body layer by a mask or the like.
  • a first inorganic film layer is formed on the wiring region of the flexible substrate, and a second inorganic film layer is formed on the bottom wall of the groove.
  • the array substrate includes a display area and a non-display area.
  • the manufacturing method of the display area may be a manufacturing method known to those skilled in the art, and details are not described herein again.
  • the array substrate prepared by the above method for manufacturing the array substrate can directly divide the inorganic film layer into a plurality of independent portions when depositing the inorganic film layer, thereby reducing the bending stress of the inorganic film layer when the non-display region is bent. , effectively avoiding the breakage of the inorganic film layer, thereby effectively avoiding the breakage of the peripheral metal traces.
  • the surface of the flexible substrate is provided with a groove, so that the inorganic film layer can be broken to form the first inorganic film layer and the second inorganic film layer, wherein the first inorganic film layer is located in the routing region, and the second inorganic film layer
  • the bottom wall of the groove can separate the inorganic film layer into a plurality of independent parts when the inorganic film layer is deposited, thereby reducing the bending stress of the inorganic film layer when the non-display area is bent, and effectively avoiding the inorganic film.
  • the breakage of the layer thereby effectively avoiding the breakage of the peripheral metal traces and improving the reliability of the array substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请涉及一种阵列基板，其包括显示区、以及位于显示区外侧的非显示区；非显示区包括：柔性衬底，所述柔性衬底表面设有若干凹槽，柔性衬底上相邻凹槽之间的区域为走线区；无机膜层，所述无机膜层包括形成于走线区的第一无机膜层，以及形成于所述凹槽的底壁的第二无机膜层，所述第二无机膜层与所述第一无机膜层之间被凹槽的侧壁断开；以及***金属走线，形成于所述第一无机膜层的表面。上述阵列基板，柔性衬底表面设有凹槽，可以在无机膜层沉积时将无机膜层分隔成为若干个相互独立的部分，有效避免了无机膜层的断裂，进而有效避免***金属走线的断裂。本申请还提供一种显示屏和一种阵列基板的制造方法。

Description

阵列基板及其制造方法及显示屏 技术领域
本申请涉及显示技术领域，特别是一种阵列基板及其制造方法及显示屏。
背景技术
显示屏包括显示区(AA区)以及非显示区(非AA区)，为了达到某些功能，会要求非显示区能够弯折。例如为了实现窄边框化，将非显示区弯折到屏体的背面，从而减少边框宽度。
但是，目前的显示屏，在非显示区的弯折过程中，非显示区中的***金属走线易断裂，从而造成屏体不良。
申请内容
基于此，有必要提供一种能够有效防止***金属走线断裂的阵列基板。
一种阵列基板，包括显示区、以及位于所述显示区外侧的非显示区；
所述非显示区包括：
柔性衬底，所述柔性衬底表面设有若干凹槽，所述柔性衬底上相邻所述凹槽之间的区域为走线区；
无机膜层，所述无机膜层包括形成于所述走线区的第一无机膜层，以及形成于所述凹槽的底壁的第二无机膜层，所述第二无机膜层与所述第一无机膜层之间被凹槽的侧壁断开；
以及***金属走线，形成于所述第一无机膜层的表面。
上述阵列基板，柔性衬底表面设有凹槽，从而可以将无机膜层断开形成第一无机膜层和第二无机膜层，其中第一无机膜层位于走线区，第二无机膜层位于凹槽的底壁，即可以在无机膜层沉积时将无机膜层分隔成为若干个相互独立的部分，从而在非显示区弯折时减小无机膜层的弯曲应力，有效避免了无机膜层的断裂，进而有效避免***金属走线的断裂，提高阵列基板的可靠性。
在其中一个实施例中，所述凹槽的侧壁与所述凹槽的底壁的夹角小于90度。
在其中一个实施例中，所述凹槽的截面呈等腰梯形。
在其中一个实施例中，所述凹槽的侧壁的截面呈圆弧状。在其中一个实施例中，所述凹槽的深度大于1微米。
在其中一个实施例中，相邻两所述金属走线之间具有若干个所述凹槽。
在其中一个实施例中，还包括形成于所述***金属走线表面的保护层。
在其中一个实施例中，所述柔性衬底包括柔性衬底主体层和柔性衬底表层。
在其中一个实施例中，所述凹槽贯穿所述柔性衬底表层。
在其中一个实施例中，所述第一膜层的宽度大于所述***金属走线的宽度。
在其中一个实施例中，所述柔性衬底表层的厚度等于所述凹槽的深度。
在其中一个实施例中，所述柔性衬底表层为图案化柔性衬底表层，所述柔性衬底表层的镂空区域与所述柔性衬底主体层构成所述凹槽。
本申请还提供一种显示屏。
一种显示屏，包括本申请提供的阵列基板。
上述显示屏包括本申请提供的阵列基板，阵列基板的非显示区的结构可以有效防止***金属走线的断裂，从而能够更好的保证讯号的传递，延长显示屏的使用寿命。
本申请还提供一种阵列基板的制造方法。
一种阵列基板的制造方法，所述阵列基板包括非显示区，所述阵列基板的非显示区的制造方法包括：
提供柔性衬底；
在所述柔性衬底上形成凹槽；
在所述柔性衬底的表面形成第一无机膜层，在所述凹槽的底壁上形成第二无机膜层；
在所述第一无机膜层表面形成***金属走线。
在其中一个实施例中，在柔性衬底上形成凹槽的操作为：
提供柔性衬底主体层；
在所述柔性衬底主体层上形成图案化的柔性衬底表层，以使柔性衬底表层的镂空区域与所述柔性衬底主体层构成所述凹槽。
通过上述阵列基板的制造方法制得的阵列基板，可以在沉积无机膜层时直接将无机膜层分隔成为若干个相互独立的部分，从而在非显示区弯折时减小无机膜层的弯曲应力，有效避免了无机膜层的断裂，进而有效避免***金属走线的断裂。
附图说明
图1为本申请实施例一的阵列基板的结构示意图。
图2为图1所示阵列基板的非显示区的截面示意图。
图3为本申请实施例二的阵列基板的非显示区的截面示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
如图1至图2所示，本申请实施例一提供的阵列基板300，包括显示区310、以及位于显示区外侧的非显示区320。
其中，显示区310(即AA区)为阵列基板100中与像素单元对应的区域，在显示区310中设有薄膜晶体管以及电容器等用于驱动像素单元的电子元件。本申请对于显示区310的具体结构没有特殊限制，可以采用本领域技术人员认为合适的各种结构，在此不再赘述。
本实施例中，非显示区320(即非AA区)位于显示区310所在侧。当然，非显示区320也可以存在于显示区310外侧的其他位置。
非显示区320包括柔性衬底321、无机膜层323以及***金属走线325。
具体的，柔性衬底321包括一层或多层柔性基板。柔性衬底321表面设有若干凹槽3211，柔性衬底321上相邻凹槽3211之间的区域为走线区3213。
无机膜层323包括同时形成于所述走线区3213的第一无机膜层3231，以及形成于凹槽3211的底壁的第二无机膜层3233。第二无机膜层3233与第一无机膜层3231之间被凹槽3211的侧壁断开。***金属走线325形成于第一无机膜层3231表面。
第二无机膜层3233与第一无机膜层3231之间被凹槽3211的侧壁断开。即将无机膜层323分隔成为若干个相互独立的部分，从而在非显示区320弯折时减小无机膜层323的弯曲应力，有效避免了无机膜层323的断裂，进而有效避免***金属走线325的断裂，提高阵列基板300的可靠性。
凹槽3211的侧壁具有向凹槽3211外侧凹的壁段，如凹槽3211的侧壁为斜壁或凹槽3211侧壁的截面呈圆弧状等。此种结构，使得第一无机膜层3231和第二无机膜层3233可以通过一次无机物沉积工序完成，且使得无机物沉积时在凹槽3211的边沿处产生爬坡断裂现象，使得第一无机膜层3231和第二无机膜层3233相互独立。
优选的，本实施例中，凹槽3211的侧壁与凹槽3211的底壁的夹角小于90度，即凹槽3211的侧壁为向凹槽3211外侧凹陷的斜壁。此种方案结构简单，便于实现。更优选的，凹槽3211的截面呈等腰梯形，即凹槽3211在垂直于凹槽3211延伸方向的截面呈等腰梯形。使得非显示区320弯曲时的弯曲应力均匀，避免产生应力集中的现象。
凹槽3211的深度大于无机膜层323的厚度，从而使得无机膜层323沉积时，第一无机膜层3231与第二无机膜层3233之间被凹槽3211的侧壁断开。优选的，凹槽3211的深度大于1微米，从而能够释放足够多的无机膜层的弯曲应力，确保防止无机膜层的断裂。
本实施例中，凹槽3211分布均匀，且凹槽3211的大小相同，便于加工。当然，根据需要，凹槽3211的分布可以不均匀，且凹槽3211的大小也可以不完全相同。
进一步地，第一无机膜层3231的宽度大于等于***金属走线325的宽度， 从而使得***金属走线325能够完全位于第一无机膜层3231上，且不经过凹槽3211处，从而不会导致***金属走线325的爬坡断裂现象，即能防止***金属走线325断裂，保证信号传输的可靠性。
本实施例中，相邻***金属走线325之间仅具有一个凹槽3211。需要说明的是，相邻两所述金属走线325之间还可以具有若干个所述凹槽3211，能更多的释放无机膜层323的弯曲应力，防止无机膜层323的断裂，进而防止***金属走线325的断裂。
在另外一个实施例中，阵列基板300的非显示区320还包括形成于***金属走线325表面的保护层，用以防止***金属走线325与水氧接触，导致***金属走线325被氧化。
如图3所示，本申请实施例二提供的阵列基板，与阵列基板300不同的是，柔性衬底331包括柔性衬底主体层3315和柔性衬底表层3317。凹槽3311贯穿柔性衬底表层3317。柔性衬底主体层3315包括一层或多层柔性基板，柔性衬底表层3317包括一层或多层柔性基板。优选的，可以控制柔性衬底表层3317的厚度等于凹槽3311的深度，从而可以通过在柔性衬底主体层3315表面形成图案化的柔性衬底表层3317的方式，以使柔性衬底表层3317的镂空区域与柔性衬底主体层3315构成凹槽3311。
可以理解的是，凹槽3311的深度还可以大于或小于柔性衬底表层3317的厚度，只要精确控制刻蚀深度即可。但要保证凹槽3311的深度大于无机膜层的厚度，从而使得无机膜层沉积时，走线区的第一无机膜层与凹槽3311底壁的第二无机膜层之间被凹槽3311的侧壁断开。
本申请提供一种显示屏，包括本申请提供的阵列基板。
需要说明的是，显示屏除了阵列基板，还包括其它器件，其它器件的具体结构以及器件之间的连接关系均可以采用本领域技术人员所公知的结构，此处不再赘述。
本申请提供的阵列基板的非显示区的结构可以有效防止***金属走线的断裂，从而能够更好的保证讯号的传递，延长显示屏的使用寿命。
本申请提供了一种阵列基板的制造方法。阵列基板的非显示区的制造方法 具体的包括如下步骤：
S1，在柔性衬底上形成凹槽。
具体的，可以通过刻蚀等方式直接在柔性衬底的表面形成凹槽。
在另外一个实施例中，柔性衬底包括柔性衬底主体层和柔性衬底表层。柔性衬底主体层包括至少一层柔性基板；柔性衬底表层包括至少一层柔性基板。在柔性衬底的表面形成若干个凹槽的操作为：
提供柔性衬底主体层；
在柔性衬底主体层上形成图案化的柔性衬底表层，以使柔性衬底表层的镂空区域与柔性衬底主体层构成凹槽。
具体的，可以通过掩膜板等方式在柔性衬底主体层上形成图案化的柔性衬底表层。
S2，沉积无机膜层，以在所述柔性衬底的表面形成若干个第一无机膜层和若干个第二无机膜层。
具体的，在柔性衬底的走线区形成第一无机膜层，在凹槽的底壁上形成第二无机膜层。
S3，在第一无机膜层表面形成***金属走线。
需要说明的是，阵列基板包括显示区和非显示区，显示区的制造方法可采用本领域技术人员所公知的制造方法，此处不再赘述。
通过上述阵列基板的制造方法制得的阵列基板，可以在沉积无机膜层时直接将无机膜层分隔成为若干个相互独立的部分，从而在非显示区弯折时减小无机膜层的弯曲应力，有效避免了无机膜层的断裂，进而有效避免***金属走线的断裂。
上述阵列基板，柔性衬底表面设有凹槽，从而可以将无机膜层断开形成第一无机膜层和第二无机膜层，其中第一无机膜层位于走线区，第二无机膜层位于凹槽的底壁，即可以在无机膜层沉积时将无机膜层分隔成为若干个相互独立的部分，从而在非显示区弯折时减小无机膜层的弯曲应力，有效避免了无机膜层的断裂，进而有效避免***金属走线的断裂，提高阵列基板的可靠性。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对 上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。

Claims (15)

  1. 一种阵列基板，包括显示区、以及位于所述显示区外侧的非显示区；
    其中，所述非显示区包括：
    柔性衬底，所述柔性衬底表面设有若干凹槽，所述柔性衬底上相邻所述凹槽之间的区域为走线区；
    无机膜层，所述无机膜层包括形成于所述走线区的第一无机膜层，以及形成于所述凹槽的底壁的第二无机膜层，所述第一无机膜层与所述第二无机膜层之间被凹槽的侧壁断开；以及
    ***金属走线，形成于所述第一无机膜层的表面。
  2. 根据权利要求1所述的阵列基板，其中，所述凹槽的侧壁与所述凹槽的底壁的夹角小于90度。
  3. 根据权利要求2所述的阵列基板，其中，所述凹槽的截面呈等腰梯形。
  4. 根据权利要求1所述的阵列基板，其中，所述凹槽的侧壁的截面呈圆弧状。
  5. 根据权利要求1所述的阵列基板，其中，所述凹槽的深度大于1微米。
  6. 根据权利要求1所述的阵列基板，其中，相邻两所述金属走线之间具有若干个所述凹槽。
  7. 根据权利要求1所述的阵列基板，其中，还包括形成于所述***金属走线表面的保护层。
  8. 根据权利要求1所述的阵列基板，其中，所述柔性衬底包括柔性衬底主体层和柔性衬底表层。
  9. 根据权利要求8所述的阵列基板，其中，所述凹槽贯穿所述柔性衬底表层。
  10. 根据权利要求1所述的阵列基板，其中，所述第一膜层的宽度大于所述***金属走线的宽度。
  11. 根据权利要求9所述的阵列基板，其中，所述柔性衬底表层的厚度等于所述凹槽的深度。
  12. 根据权利要求11所述的阵列基板，其中，所述柔性衬底表层为图案化柔性衬底表层，所述柔性衬底表层的镂空区域与所述柔性衬底主体层构成所述凹槽。
  13. 一种显示屏，包括权利要求1至12任一项所述的阵列基板。
  14. 一种阵列基板的制造方法，所述阵列基板包括非显示区，其中，所述阵列基板的非显示区的制造方法包括：
    提供柔性衬底；
    在所述柔性衬底上形成凹槽；
    在所述柔性衬底的表面形成第一无机膜层，在所述凹槽的底壁上形成第二无机膜层；
    在所述第一无机膜层表面形成***金属走线。
  15. 根据权利要求14所述的阵列基板的制造方法，其中，在柔性衬底上形成凹槽的操作为：
    提供柔性衬底主体层；
    在所述柔性衬底主体层上形成图案化的柔性衬底表层，以使柔性衬底表层的镂空区域与所述柔性衬底主体层构成所述凹槽。
PCT/CN2018/092036 2017-11-30 2018-06-20 阵列基板及其制造方法及显示屏 WO2019105014A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/342,197 US11227877B2 (en) 2017-11-30 2018-06-20 Array substrates and manufacturing methods thereof and display screens

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711240599.6A CN109860203B (zh) 2017-11-30 2017-11-30 阵列基板及其制造方法及显示屏
CN201711240599.6 2017-11-30

Publications (1)

Publication Number Publication Date
WO2019105014A1 true WO2019105014A1 (zh) 2019-06-06

Family

ID=64797041

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/092036 WO2019105014A1 (zh) 2017-11-30 2018-06-20 阵列基板及其制造方法及显示屏

Country Status (4)

Country Link
US (1) US11227877B2 (zh)
CN (1) CN109860203B (zh)
TW (1) TWI662534B (zh)
WO (1) WO2019105014A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634418B (zh) * 2019-11-05 2022-11-11 京东方科技集团股份有限公司 驱动背板及其制备方法、驱动背板母板、显示面板和液晶天线的制备方法
CN113451329A (zh) * 2020-03-25 2021-09-28 深圳市柔宇科技有限公司 柔性基板及可拉伸电子装置
CN113206136B (zh) * 2021-04-29 2024-05-28 Oppo广东移动通信有限公司 显示面板及其制备方法、电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003222898A (ja) * 2002-01-30 2003-08-08 Kyocera Corp 液晶表示装置
CN106486520A (zh) * 2015-08-24 2017-03-08 三星显示有限公司 柔性显示器及其制造方法
CN106887447A (zh) * 2015-12-15 2017-06-23 乐金显示有限公司 柔性显示装置
CN107275337A (zh) * 2016-04-04 2017-10-20 株式会社日本显示器 显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242398B2 (en) 2002-02-18 2007-07-10 Ignis Innovation Inc. Flexible display device
US9349758B2 (en) 2014-09-30 2016-05-24 Lg Display Co., Ltd. Flexible display device with divided power lines and manufacturing method for the same
KR102446889B1 (ko) * 2015-12-28 2022-09-26 삼성디스플레이 주식회사 플렉서블 기판 및 이를 포함하는 플렉서블 표시 장치
KR102400022B1 (ko) * 2015-12-30 2022-05-19 엘지디스플레이 주식회사 측부 구부림 구조를 갖는 플렉서블 유기발광 다이오드 표시장치
CN106206615B (zh) * 2016-08-26 2020-01-03 深圳市华星光电技术有限公司 阵列基板的制作方法
JP2018054675A (ja) * 2016-09-26 2018-04-05 株式会社ジャパンディスプレイ 表示装置
TWI621050B (zh) 2017-06-16 2018-04-11 友達光電股份有限公司 顯示裝置及其製造方法
CN109216576A (zh) * 2017-06-30 2019-01-15 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003222898A (ja) * 2002-01-30 2003-08-08 Kyocera Corp 液晶表示装置
CN106486520A (zh) * 2015-08-24 2017-03-08 三星显示有限公司 柔性显示器及其制造方法
CN106887447A (zh) * 2015-12-15 2017-06-23 乐金显示有限公司 柔性显示装置
CN107275337A (zh) * 2016-04-04 2017-10-20 株式会社日本显示器 显示装置

Also Published As

Publication number Publication date
TWI662534B (zh) 2019-06-11
US11227877B2 (en) 2022-01-18
CN109860203B (zh) 2020-11-17
CN109860203A (zh) 2019-06-07
US20210327919A1 (en) 2021-10-21
TW201837892A (zh) 2018-10-16

Similar Documents

Publication Publication Date Title
WO2019105012A1 (zh) 阵列基板及其制造方法及显示屏
CN109599402B (zh) 显示基板和显示装置
WO2019105011A1 (zh) 阵列基板及显示屏
US9293517B2 (en) Array substrate and manufacturing method thereof, and display panel
WO2019105014A1 (zh) 阵列基板及其制造方法及显示屏
WO2018036299A1 (zh) 阵列基板及显示装置
WO2020000609A1 (zh) 显示面板及其制造方法
WO2020118875A1 (zh) 阵列基板及具有该阵列基板的显示装置
US9971220B2 (en) COA substrate and manufacturing method thereof
US9627416B2 (en) Array substrate and method for manufacturing the same, display device
US20200194469A1 (en) Array substrate and display device comprising same
WO2020118990A1 (zh) 显示面板
WO2020173053A1 (zh) 阵列基板、其制备方法及显示屏
WO2019179339A1 (zh) 阵列基板及其制造方法、显示面板、显示装置
WO2020042261A1 (zh) 显示面板及其制作方法
WO2020124743A1 (zh) 一种显示面板及其制作方法
CN110265460A (zh) Oled显示基板及其制作方法、显示装置
WO2021248550A1 (zh) 显示面板及其制作方法
WO2020206751A1 (zh) 显示面板、显示模组及制作方法
TWI528074B (zh) 顯示面板
WO2020077818A1 (zh) 一种薄膜晶体管阵列基板及液晶显示器
WO2020056814A1 (zh) 一种柔性显示装置及其制备方法
US9679924B2 (en) Array substrate and manufacturing method thereof, display device
US10825887B2 (en) Flexible display panel, flexible display device and method of manufacturing the flexible display panel
JP6926327B2 (ja) Ｏｌｅｄ基板の製造方法及びｏｌｅｄディスプレイ装置の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18883939

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18883939

Country of ref document: EP

Kind code of ref document: A1