WO2019077994A1 - Dispositif térahertz - Google Patents

Dispositif térahertz Download PDF

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Publication number
WO2019077994A1
WO2019077994A1 PCT/JP2018/036842 JP2018036842W WO2019077994A1 WO 2019077994 A1 WO2019077994 A1 WO 2019077994A1 JP 2018036842 W JP2018036842 W JP 2018036842W WO 2019077994 A1 WO2019077994 A1 WO 2019077994A1
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Prior art keywords
terahertz
conductive
rectifying
terminal
disposed
Prior art date
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PCT/JP2018/036842
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English (en)
Japanese (ja)
Inventor
俊和 向井
在瑛 金
一魁 鶴田
Original Assignee
ローム株式会社
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Priority claimed from JP2018155898A external-priority patent/JP7192188B2/ja
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to CN201880067881.5A priority Critical patent/CN111226305B/zh
Priority to US16/755,839 priority patent/US10957598B2/en
Publication of WO2019077994A1 publication Critical patent/WO2019077994A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Definitions

  • the present disclosure relates to a terahertz device.
  • the present disclosure has as its main object to provide a more preferable terahertz device.
  • a terahertz device includes a semiconductor substrate, a terahertz element, and a first rectifying element.
  • the terahertz element is disposed on the semiconductor substrate.
  • the first rectifying element is electrically connected in parallel to the terahertz element.
  • FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 2;
  • FIG. 8 is a cross-sectional view taken along the line VIII-VIII in FIG.
  • FIG. 9 is a cross-sectional view taken along the line IX-IX in FIG. FIG.
  • FIG. 9 is another cross-sectional view along the line IX-IX in FIG. 2;
  • FIG. 3 is a cross-sectional view taken along the line XI-XI in FIG.
  • FIG. 3 is a cross-sectional view taken along the line XII-XII in FIG.
  • FIG. 5 is another cross-sectional view along the line XII-XII in FIG. 2; It is sectional drawing in alignment with the XIV-XIV line of FIG.
  • It is a circuit diagram of the terahertz element of the first embodiment, a first rectifying element, and a second rectifying element. It is sectional drawing of the 1st rectifier of 1st Embodiment. It is sectional drawing of the 2nd rectifier of 1st Embodiment.
  • FIG. 23 is a circuit diagram of the terahertz element, the first rectifying element, and the second rectifying element, including two cross-sectional views along the line XXIII-XXIII in FIG. 22.
  • FIG. 2 is a cross-sectional view of the terahertz device of the first embodiment. It is a top view of the semiconductor component of the 1st modification of a 1st embodiment. It is a top view of the terahertz device of the 1st modification of a 1st embodiment. It is a top view of the terahertz device of the 2nd modification of a 1st embodiment. It is a top view of the terahertz device of the 3rd modification of a 1st embodiment.
  • FIG. 2 is a cross-sectional view of the terahertz device of the first embodiment. It is a top view of the semiconductor component of the 1st modification of a 1st embodiment. It is a top view of the terahertz device of the 1s
  • FIG. 7 is a cross-sectional view of a terahertz device of another modification of the first embodiment. It is a figure which shows an example of the shape of planar view of a 2nd part. It is a figure which shows an example of the shape of planar view of a 2nd part. It is a figure which shows an example of the shape of planar view of a 2nd part. It is a figure which shows an example of the shape of planar view of a 2nd part. It is a figure which shows an example of the shape of planar view of a 2nd part. It is a figure which shows an example of the shape of planar view of a 2nd part.
  • FIG. 30 is a cross-sectional view of the structure at one time in manufacturing the first portion shown in FIG. 29.
  • FIG. 30 is a cross-sectional view of the structure at one time in manufacturing the first portion shown in FIG. 29.
  • FIG. 30 is a cross-sectional view of the structure at one time in manufacturing the first portion shown in FIG. 29.
  • FIG. 30 is a cross-sectional view of the structure at one time in manufacturing the first portion shown in FIG. 29.
  • FIG. 30 is a cross-sectional view of the structure at one time in manufacturing the first portion shown in FIG. 29.
  • It is a perspective view of the terahertz device of the modification of a 1st embodiment. It is a perspective view of the terahertz device of the modification of a 1st embodiment. It is a top view of the terahertz device of the modification of a 1st embodiment. It is a top view of the terahertz device of the modification of a 1st embodiment.
  • a certain thing A is located on a certain thing B means "a certain thing A is in contact with a certain thing B", and "a certain thing A and "Intermediate thing with another thing B” is included.
  • the terms “some A is laminated to some B” and “some A is laminated onto some B” refer to “some A as being unless otherwise noted. And “being laminated to a certain thing B while being interposed with another thing between a certain thing A and a certain thing B”.
  • FIGS. 1 to 24 A first embodiment of the present disclosure will be described using FIGS. 1 to 24.
  • FIG. 1 is a perspective view of the terahertz device of the first embodiment.
  • the terahertz device A1 shown in the figure includes a semiconductor component B1, a support 8, a resin portion 85, and wires 871 and 872.
  • FIG. 2 is a plan view of the semiconductor component of the first embodiment.
  • the semiconductor component B1 shown in the figure oscillates a high frequency electromagnetic wave of a frequency in the terahertz band.
  • the semiconductor component B1 does not oscillate, but may receive, high frequency electromagnetic waves in the terahertz band.
  • the semiconductor component B1 may be one that oscillates and receives high frequency electromagnetic waves in the terahertz band.
  • the semiconductor component B1 includes the semiconductor substrate 1, the first conductive layer 2, the second conductive layer 3, the insulating layer 4 (see FIG. 5 and the like), the terahertz element 5, the first rectifying element 61, the first And a second rectifying element 62.
  • the semiconductor substrate 1 is made of a semiconductor and has a semi-insulating property.
  • the semiconductor constituting the semiconductor substrate 1 is, for example, InP, but may be a semiconductor other than InP.
  • the semiconductor substrate 1 has a surface 11. The surface 11 faces in the thickness direction Z1 (see FIG. 5 etc.) of the semiconductor substrate 1.
  • the semiconductor substrate 1 includes edges 131-134.
  • the edge 131 and the edge 133 are spaced apart from each other in the first direction X1.
  • the edge 131 and the edge 133 both extend along the second direction X2.
  • the second direction X2 is orthogonal to the first direction X1.
  • the edge 132 and the edge 134 are spaced apart from each other in the second direction X2. Both the edge 132 and the edge 134 extend along the first direction X1.
  • Edge 131 is connected to edge 132
  • edge 132 is connected to edge 133
  • edge 133 is connected to edge 134
  • edge 134 is connected to edge 131.
  • FIG. 4 is a partially enlarged view of region IV of FIG.
  • FIG. 5 is a cross-sectional view showing the details of the terahertz element of the first embodiment.
  • the terahertz element 5 shown in FIGS. 2, 4 and 5 is formed on a semiconductor substrate 1.
  • the terahertz element 5 is electrically connected to the first conductor layer 2 and the second conductor layer 3.
  • the electromagnetic wave emitted from the terahertz element 5 is reflected by the back reflector metal layer 88, and the terahertz element 5 has a surface emission radiation pattern in a direction (thickness direction Z1) perpendicular to the semiconductor substrate 1.
  • the terahertz element 5 is typically an RTD.
  • the terahertz element 5 may be configured by a diode other than the RTD or a transistor.
  • a Tannet (Tunnet T: Tunnel Transit Time) diode an IMP ATT (Impact Ionization Avalanche Transit Time) diode, a GaAs based field effect transistor (FET: Field Effect Transistor), a GaN based FET, a high electron A mobility transistor (HEMT: High Electron Mobility Transistor) or a heterojunction bipolar transistor (HBT) can be comprised.
  • FIG. 6 is a partial enlarged view of FIG.
  • the GaInAs layer 92a is disposed in the semiconductor layer 91a (made of, for example, GaInAs) and is doped with an n-type impurity.
  • the GaInAs layer 93a is disposed on the GaInAs layer 92a and is not doped with impurities.
  • An AlAs layer 94 a is disposed on the GaInAs layer 93 a, an InGaAs layer 95 is disposed on the AlAs layer 94 a, and an AlAs layer 94 b is located on the InGaAs layer 95.
  • the AlAs layer 94a, the InGaAs layer 95, and the AlAs layer 94b constitute an RTD portion.
  • the GaInAs layer 93b is disposed on the AlAs layer 94b and is not doped with impurities.
  • the GaInAs layer 92b is disposed on the GaInAs layer 93b and is doped with an n-type impurity.
  • a GaInAs layer 91b is disposed on the GaInAs layer 92b and is heavily doped with n-type impurities. Then, the first conductor layer 2 is located on the GaInAs layer 91 b.
  • a GaInAs layer heavily doped with an n-type impurity may be interposed between the GaInAs layer 91 b and the first conductor layer 2, unlike FIG. 6. Thereby, the contact between the first conductor layer 2 and the GaInAs layer 91 b can be improved.
  • the region R11 is a region for oscillating the terahertz wave.
  • FIG. 7 is a cross-sectional view taken along the line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along the line VIII-VIII in FIG.
  • FIG. 9 is a cross-sectional view taken along the line IX-IX in FIG.
  • FIG. 10 is another cross-sectional view along the line IX-IX in FIG.
  • FIG. 13 is another cross-sectional view along the line XII-XII in FIG.
  • FIG. 14 is a cross-sectional view taken along line XIV-XIV of FIG.
  • the insulating layer 4 shown in FIG. 8 is formed on the semiconductor substrate 1.
  • the insulating layer 4 is made of, for example, SiO 2 .
  • the material forming the insulating layer 4 may be Si 3 N 4 , SiON, HfO 2 , or Al 2 O 3 .
  • the thickness of the insulating layer 4 is, for example, 10 nm to 1000 nm.
  • the insulating layer 4 can be formed by, for example, a CVD method or a sputtering method.
  • the first conductive layer 2 and the second conductive layer 3 are respectively formed on the semiconductor substrate 1.
  • the first conductor layer 2 and the second conductor layer 3 are insulated from each other.
  • the terahertz element 5 is separated from the second conductor layer 3 in the first direction X1 orthogonal to the thickness direction Z1 of the semiconductor substrate 1.
  • the first conductor layer 2 and the second conductor layer 3 each have a laminated structure of metal.
  • the laminated structure of each of the first conductor layer 2 and the second conductor layer 3 is, for example, a structure in which Au, Pd, and Ti are laminated.
  • each of the first conductor layer 2 and the second conductor layer 3 is, for example, a structure in which Au and Ti are laminated.
  • the thickness of each of the first conductor layer 2 and the second conductor layer 3 is, for example, 10 to 2000 nm.
  • Each of the first conductor layer 2 and the second conductor layer 3 can be formed by vacuum evaporation, sputtering, or the like.
  • the first conductive layer 2 includes a first portion 21, a first inductance portion 22, a first capacitor portion 23, and a first electrode 25.
  • the second conductor layer 3 includes a second portion 31, a second inductance portion 32, a second capacitor portion 33, and a second electrode 35.
  • the first portion 21 extends along the first direction X1.
  • the first portion 21 includes a first conductive portion 214 and a second conductive portion 215.
  • the first conductive portion 214 is a long rectangular portion.
  • the first conductive portion 214 may extend along the first direction X1 and function as an antenna.
  • the second conductive portion 215 extends from the first conductive portion 214 toward the second conductive layer 3 in the thickness direction Z1.
  • the second conductive portion 215 overlaps the terahertz element 5 in the thickness direction Z1.
  • the first inductance portion 22 shown in FIGS. 2 and 4 is connected to the first portion 21 and the first capacitor portion 23 and extends from the first portion 21 to the first capacitor portion 23 along the second direction X2.
  • the first inductance unit 22 functions as an inductance.
  • the length L1 (see FIG. 4) in the second direction X2 of the first inductance portion 22 is, for example, 5 ⁇ m to 100 ⁇ m.
  • the width of the first inductance portion 22 is, for example, 1 ⁇ m to 10 ⁇ m.
  • the second portion 31 extends along the third direction X3.
  • the third direction X3 is the direction opposite to the first direction X1.
  • the second portion 31 can function as an antenna.
  • the second inductance portion 32 is connected to the second portion 31 and the second capacitor portion 33, and extends from the second portion 31 to the second capacitor portion 33 along the second direction X2.
  • the second inductance unit 32 functions as an inductance.
  • the length L2 (see FIG. 4) in the second direction X2 of the second inductance portion 32 is, for example, 5 ⁇ m to 100 ⁇ m.
  • the width of the second inductance portion 32 is, for example, 1 ⁇ m to 10 ⁇ m.
  • the first capacitor portion 23 is located on the side of the terahertz element 5 in the second direction X2.
  • the first capacitor portion 23 is rectangular in the thickness direction Z1.
  • FIG. 3 is a view in which the first conductive layer 2 is omitted from FIG.
  • the second capacitor unit 33 is located on the side of the terahertz element 5 in the second direction X2. As shown in FIGS. 12 and 13, the first capacitor portion 23 is interposed between the second capacitor portion 33 and the semiconductor substrate 1. Unlike the present embodiment, the second capacitor unit 33 may be interposed between the first capacitor unit 23 and the semiconductor substrate 1. The second capacitor portion 33 is stacked on the first capacitor portion 23 and is insulated from the first capacitor portion 23 via the insulating layer 4. The second capacitor unit 33 and the first capacitor unit 23 constitute a capacitor. In the present embodiment, the second capacitor portion 33 is rectangular in the thickness direction Z1.
  • the first electrode 25 is connected to the first capacitor unit 23.
  • the first electrode 25 is rectangular.
  • the first electrode 25 is a pad portion to which the wire 871 (see FIG. 11) is bonded.
  • the first electrode 25 has a portion in direct contact with the semiconductor substrate 1. The contact portion overlaps the wire bonding portion in which the wire 871 and the first electrode 25 are in contact in the thickness direction Z1.
  • the first electrode 25 in the thickness direction Z1, includes edges 251 to 254.
  • the edge 251 and the edge 253 both extend along the second direction X2.
  • the edge 252 and the edge 254 are spaced apart from each other in the second direction X2.
  • the edge 252 and the edge 254 both extend along the first direction X1.
  • Edge 251 connects to edge 252, which connects to edge 253, which is spaced apart from edge 254, which connects to edge 251.
  • the edge 251 and the edge 252 respectively extend to the edge 131 and the edge 132 in the thickness direction Z1.
  • the edge 251 and the edge 252 may not extend to the edge 131 and the edge 132 in the thickness direction Z1, respectively.
  • the second electrode 35 is connected to the second capacitor unit 33.
  • the second electrode 35 is rectangular.
  • the second electrode 35 is a pad portion to which the wire 872 (see FIG. 14) is bonded.
  • the second electrode 35 has a portion in direct contact with the semiconductor substrate 1. The contact portion overlaps the wire bonding portion in which the wire 872 and the second electrode 35 are in contact in the thickness direction Z1.
  • the second electrode 35 extends to the edge 133 and the edge 132 in the thickness direction Z1. Unlike the present embodiment, the second electrode 35 may not reach the edge 133 and the edge 132 in the thickness direction Z1. In this case, when dicing the semiconductor substrate 1 in the manufacturing process of the semiconductor component B1, it is possible to suppress the generation of burrs that may be generated by cutting the second electrode 35.
  • the second electrode 35 includes edges 351 to 354 in the thickness direction Z1.
  • the edge 351 and the edge 353 both extend along the second direction X2.
  • the edge 352 and the edge 354 are spaced apart from each other in the second direction X2.
  • Both the edge 352 and the edge 354 extend along the first direction X1.
  • Edge 351 connects to edge 352
  • edge 352 connects to edge 353
  • edge 353 connects to edge 354 and edge 354 is spaced from edge 351.
  • the edge 352 and the edge 353 respectively extend to the edge 132 and the edge 133 in the thickness direction Z1.
  • the edge 352 and the edge 353 may not extend to the edge 132 and the edge 133, respectively, in the thickness direction Z1.
  • FIG. 15 is a circuit diagram of the terahertz element, the first rectifying element, and the second rectifying element of the first embodiment.
  • the first rectifying element 61 is electrically connected in parallel to the terahertz element 5.
  • the first rectifying element 61 is, for example, a diode. Examples of such diodes include zener diodes, Schottky diodes, and light emitting diodes.
  • the first rectifying element 61 includes a first terminal 61A and a second terminal 61B. In the first rectifying element 61, the electrical direction from the first terminal 61A to the second terminal 61B is the forward direction. In normal use, in the first rectifying element 61, current easily flows from the first terminal 61A to the second terminal 61B, and current hardly flows from the second terminal 61B to the first terminal 61A.
  • FIG. 16 is a cross-sectional view of an example of the first rectifying element of the first embodiment.
  • the first rectifying element 61 includes a first semiconductor layer 611 and a second semiconductor layer 612.
  • the first semiconductor layer 611 and the second semiconductor layer 612 are stacked on each other.
  • the first semiconductor layer 611 has a first conductivity type
  • the second semiconductor layer 612 has a second conductivity type opposite to the first conductivity type.
  • the first conductivity type is p-type
  • the second conductivity type is n-type.
  • the first conductivity type is p-type.
  • FIG. 18 shows the current-voltage characteristics of the first rectifying element 61.
  • the direction in which current flows from the first terminal 61A to the second terminal 61B is positive.
  • the absolute value of the first rising voltage value V611 of the first rectifying element 61 is smaller than the absolute value of the first breakdown voltage value V612 of the first rectifying element 61.
  • the first rising voltage value V611 may be larger than the lower limit (the absolute value of the voltage value V11, see FIG. 20) of the value in the voltage region R11 in which the terahertz element 5 oscillates the terahertz wave.
  • the first rising voltage value V611 may be larger than the upper limit (the absolute value of the voltage value V12, see FIG.
  • the absolute value of voltage value V11 is, for example, 0.3 to 0.5 V
  • the absolute value of voltage value V12 is, for example, 0.5 to 0.7 V.
  • the absolute value of the first rising voltage value V611 is, for example, 0.4 to 0.9 V.
  • the absolute value of the first breakdown voltage value V612 is, for example, 2 to 8V.
  • the second rectifying element 62 is electrically connected in parallel to the terahertz element 5.
  • the second rectifying element 62 is, for example, a diode. Examples of such diodes include zener diodes, Schottky diodes, and light emitting diodes.
  • the second rectifying element 62 includes a first terminal 62A and a second terminal 62B. In the second rectifying element 62, the electrical direction from the first terminal 62A to the second terminal 62B is the forward direction. In normal use, in the second rectifying element 62, current easily flows from the first terminal 62A to the second terminal 62B, and current hardly flows from the second terminal 62B to the first terminal 62A.
  • FIG. 17 is a cross-sectional view of an example of the second rectifying element of the first embodiment.
  • the second rectifying element 62 includes a first semiconductor layer 621 and a second semiconductor layer 622.
  • the second semiconductor layer 621 and the second semiconductor layer 622 are stacked on each other.
  • the first semiconductor layer 621 has a first conductivity type
  • the second semiconductor layer 622 has a second conductivity type opposite to the first conductivity type.
  • the first conductivity type is p-type
  • the second conductivity type is n-type.
  • the first conductivity type is p-type.
  • FIG. 18 shows the current-voltage characteristics of the second rectifying element 62.
  • the direction in which current flows from the first terminal 62A to the second terminal 62B is positive.
  • the absolute value of the second rising voltage value V621 of the second rectifying element 62 is smaller than the absolute value of the second breakdown voltage value V622 of the second rectifying element 62.
  • the second rising voltage value V621 may be larger than the lower limit (the absolute value of the voltage value V11, see FIG. 20) of the value in the voltage region R11 in which the terahertz element 5 oscillates the terahertz wave.
  • the second rising voltage value V621 may be larger than the upper limit (the absolute value of the voltage value V12, see FIG.
  • the absolute value of the second rising voltage value V621 is, for example, 0.4 to 0.9 V.
  • the absolute value of the second breakdown voltage value V622 is, for example, 2 to 8V.
  • the first terminal 61 ⁇ / b> A of the first rectifier element 61 is electrically connected to the second terminal 62 ⁇ / b> B of the second rectifier element 62.
  • the second terminal 61 B of the first rectifying element 61 is electrically connected to the first terminal 62 A of the second rectifying element 62. Therefore, the current-voltage characteristics of the combined element including the first and second rectifying elements 61 and 62 are as shown in FIG. As shown in FIG.
  • FIG. 22 is a partially enlarged view of a region XXII of FIG.
  • FIG. 23 is a circuit diagram of the terahertz element, the first rectifying element, and the second rectifying element, including two cross-sectional views along line XXIII-XXIII in FIG.
  • each of the first rectifier element 61 and the second rectifier element 62 is formed on the semiconductor substrate 1.
  • the first rectifying element 61 and the second rectifying element 62 respectively show the first conductive layer 2 (the first electrode 25 in the example shown in FIGS. 22 and 23) and the second conductive layer 3 (the FIGS. 22 and 23). In the example, it is electrically interposed between the second electrodes 35).
  • a semiconductor layer 71 (first semiconductor layer) and a semiconductor layer 72 (second semiconductor layer) are formed on the semiconductor substrate 1.
  • the semiconductor layer 71 and the semiconductor layer 72 are stacked on each other.
  • the semiconductor layer 71 has a first conductivity type, and the semiconductor layer 72 has a second conductivity type opposite to the first conductivity type.
  • the semiconductor layer 71 can constitute, for example, the first semiconductor layer 611 of the first rectifying element 61 and the first semiconductor layer 621 of the second rectifying element 62.
  • the semiconductor layer 72 can constitute the second semiconductor layer 612 of the first rectifying element 61 and the second semiconductor layer 622 of the second rectifying element 62.
  • the first conductive layer 2 (more specifically, the first electrode 25) has portions 256 and 257, and the second conductive layer 3 (more specifically, the second electrode 35). ) Have sites 356, 357.
  • the portions 256 and 357 are in contact with the semiconductor layer 71, and the portions 257 and 356 are in contact with the semiconductor layer 72.
  • the portion 256 can constitute the first terminal 61A of the first rectifying element 61
  • the second electrode 356 can constitute the second terminal 61B of the first rectifying element 61.
  • the portion 257 can constitute the second terminal 62B of the second rectifying element 62
  • the portion 357 can constitute the first terminal 62A of the second rectifying element 62.
  • FIG. 22 and FIG. 23 show an example in which the first rectifying element 61 and the second rectifying element 62 are formed between the first electrode 25 and the second electrode 35, the first electrode in the first conductive layer 2 is shown.
  • the first rectifying element 61 and the second electrode 35 may be formed between the portion other than 25 and the portion of the second conductor layer 3 other than the second electrode 35.
  • the present disclosure shows an example in which two rectifying elements of the first rectifying element 61 and the second rectifying element 62 are formed, only one of the first rectifying element 61 and the second rectifying element 62 is formed. It is also good.
  • the present disclosure shows an example in which two rectification elements of the first rectification element 61 and the second rectification element 62 are formed, in addition to the first rectification element 61 and the second rectification element 62, the terahertz element 5 is electrically There may be additional elements connected in series or in parallel.
  • FIG. 24 is a cross-sectional view of the terahertz device of the first embodiment.
  • a semiconductor component B1 is disposed on a support 8 shown in FIG.
  • the support 8 includes a substrate 81 and a conductor layer 82.
  • Wiring board 81 is, for example, a glass epoxy board.
  • a semiconductor component B1 is disposed on the wiring substrate 81.
  • the conductor layer 82 is formed on the wiring substrate 81.
  • the conductor layer 82 includes a first conductive element 821 and a second conductive element 822.
  • the first conductive element 821 and the second conductive element 822 are spaced apart from one another.
  • the support 8 may not have a glass epoxy substrate.
  • the support 8 may comprise one or more leads derived from a lead frame.
  • the resin portion 85 is disposed on the wiring board 81.
  • Resin portion 85 is made of, for example, an epoxy resin.
  • the resin portion 85 has a surface 853.
  • the surface 853 faces one side in the thickness direction of the wiring substrate 81 (which coincides with the thickness direction Z1 of the semiconductor substrate 1 in the present embodiment).
  • a space 851 in which the semiconductor component B1 is accommodated is formed in the resin portion 85.
  • the space 851 has a first side 851A and a second side 851B.
  • the first side surface 851A is inclined with respect to the direction Z1.
  • the second side surface 851B is located between the first side surface 851A and the wiring board 81 in the thickness direction Z1.
  • the second side surface 851 B extends along the thickness direction Z 1 of the wiring substrate 81.
  • the dimension of the second side surface 851B in the thickness direction Z1 is larger than the dimension of the terahertz element B1 in the thickness direction Z1.
  • the metal layer 86 may be disposed on the first side surface 851A.
  • the metal layer 86 may also be disposed on the second side surface 851B.
  • the metal layer 86 may be a metal plated layer.
  • the metal layer 86 reflects the terahertz wave more efficiently.
  • the wires 871 and 872 are bonded to the semiconductor component B1 and the wiring board 81 (more strictly, the conductor layer 82).
  • the wire 871 is bonded to the first electrode 25 of the semiconductor component B1 and the first conductive element 822 in the conductive layer 82.
  • the wire 872 is bonded to the second electrode 35 of the semiconductor component B1 and the second conductive element 821 in the conductive layer 82.
  • the first side surface 851A and the second side surface 851B may be made of metal.
  • the terahertz device A1 includes a first rectifying element 61 electrically connected in parallel to the terahertz element 5. According to such a configuration, even if a large voltage is applied to both ends of the terahertz element 5 by, for example, static electricity or the like, it becomes possible to cause current to flow through the first rectifying element 61. As a result, the flow of a large current to the terahertz element 5 can be suppressed, so that the terahertz element 5 can be prevented from breakdown due to static electricity or the like.
  • the terahertz device A1 includes a second rectifying element 62 electrically connected in parallel to both the terahertz element 5 and the first rectifying element 61. According to such a configuration, the terahertz element 5 can be prevented from breakdown due to static electricity or the like for the same reason as described above.
  • the electrical direction from the first terminal 61A to the second terminal 61B is the forward direction.
  • the electrical direction from the first terminal 62A to the second terminal 62B is the forward direction.
  • the first terminal 61 ⁇ / b> A of the first rectifying element 61 is electrically connected to the second terminal 62 ⁇ / b> B of the second rectifying element 62.
  • each of the first rectifier element 61 and the second rectifier element 62 is formed on the semiconductor substrate 1.
  • Such a configuration can be realized while avoiding the increase in size of the semiconductor substrate 1 as much as possible. Therefore, the present embodiment is suitable for avoiding the upsizing of the terahertz device A1.
  • Each configuration of the following modification differs from the configuration shown in FIG. 2 in that the first rectifier element 61 and the second rectifier element 62 are not formed on the semiconductor substrate 1 as shown in FIG. Since the other points are substantially the same, the description will be omitted.
  • the electrical arrangement of the terahertz element 5, the first rectifying element 61, and the second rectifying element 62 is as shown in FIG.
  • Each structure of the following modification can apply the description regarding drawings other than FIG. 22, FIG. 23 in the said embodiment.
  • FIG. 26 is a plan view of the terahertz device of the first modified example of the first embodiment.
  • the first conductive element 821 includes a first portion 821A and a second portion 821B.
  • the imaginary boundaries of the first portion 821A and the second portion 821B are indicated by the two-dot chain lines extending vertically in FIG.
  • the first portion 821A includes an edge 821E.
  • the first portion 821A extends in the longitudinal direction in FIG.
  • the second portion 821 B extends from the first portion 821 A toward the second conductive element 822.
  • the second portion 821B includes an edge 821F. Edge 821F is connected to edge 821E.
  • the 1st rectification element 61 is arranged at the 1st part 821A.
  • the terahertz element 5 is disposed in the first portion 821A and the second portion 821B.
  • the second conductive element 822 includes a first portion 822A and two second portions 822B.
  • the imaginary boundaries of the first portion 822A and the second portion 822B are indicated by the two-dot chain lines extending longitudinally in FIG.
  • a portion of the first portion 822A faces the second portion 821B.
  • the first portion 822A includes an edge 822E.
  • the second portion 822B extends from the first portion 822A toward the first conductive element 821.
  • the second portion 822B includes an edge 822F.
  • a portion of each second portion 822B faces the first portion 821A.
  • Edge 822F is connected to edge 822E.
  • the recess 822R is formed by the first portion 822A and the two second portions 822B.
  • the second portion 821 B of the first conductive element 821 is disposed in the recess 822 R.
  • the 2nd rectification element 62 is arranged at the 1st part 822A and the 2nd part 822B
  • the wire 861 is bonded to the first rectifying element 61 and the second portion 822 B of the second conductive element 822.
  • the wire 862 is bonded to the second rectifying element 62 and the second portion 822 B of the second conductive element 822.
  • the wire 871 is bonded to the semiconductor component B1 and the first portion 821A of the first conductive element 821.
  • the wire 872 is bonded to the semiconductor component B1 and the first portion 822A of the second conductive element 822.
  • the wires 861, 862, 871, 872 are all formed in a plan view avoiding the virtual straight line LL extending along the first portion 21 and the second portion 31 (both can function as an antenna in this embodiment). ing.
  • each of the wires 861, 862, 871, 872 is a virtual straight line extending along the first portion 21 and the second portion 31 (both can function as an antenna in this embodiment) in plan view. Do not cross to LL. In plan view, the first rectifier element 61 and the second rectifier element 62 are disposed on opposite sides of the virtual straight line LL.
  • all of the wires 861, 862, 871, 872 are virtual straight lines LL extending along the first portion 21 and the second portion 31 (both can function as an antenna in this embodiment) in plan view. It is formed avoiding the. According to such a configuration, the wires 861, 862, 871, 872 can hardly affect the oscillation (or reception) of the terahertz wave.
  • the first rectifier element 61 and the second rectifier element 62 are disposed on opposite sides of the virtual straight line LL.
  • the semiconductor component B ⁇ b> 1 can be easily disposed on the center side in plan view of the support 8. It is possible to further reduce the area of the support 8 in plan view while making it difficult to affect the oscillation (or reception) of the terahertz wave.
  • the shapes of the first conductive element 821 and the second conductive element 822 are partially different.
  • the first rectifying element 61 is disposed at the second portion 821B.
  • the semiconductor component B1 is disposed in the first portion 821A and the second portion 821B. According to such a configuration, since the first rectifying element 61 can be disposed further to the right in FIG. 27, the area reduction of the support 8 in a plan view can be realized as compared with the modification shown in FIG.
  • the first rectifier element 61 and the second rectifier element 62 may be arranged.
  • the present disclosure shows an example in which the terahertz device includes the support and the resin portion, but the terahertz device may be a chip type equivalent to the semiconductor device of the present disclosure.
  • FIG. 29 shows another modification.
  • the terahertz device A12 illustrated in FIG. 29 differs from the terahertz device A1 illustrated in FIG. 24 in that the terahertz device A12 further includes a member G10.
  • the configuration of this modification may be combined with a terahertz device other than the terahertz device A1 shown in FIG.
  • the member G ⁇ b> 10 is disposed in the resin portion 85.
  • the member G10 is exposed to the space 851.
  • the space 851 is defined by the resin portion 85 and the member G10.
  • the space 851 formed in the resin portion 85 is filled with a gas. Examples of such gases include, for example, inert gases (eg, nitrogen) and air.
  • the member G10 has a plate shape, but may have another shape.
  • the member G10 may be formed in the resin portion 85 via the bonding layer G12.
  • the space 851 may be sealed by the member G10 (and the bonding layer G12).
  • at least one portion for inserting the member G10 into the resin portion 85 in order to facilitate the arrangement of the member G10 in the resin portion 85 portions 888A to 888D in FIG. 39, FIG. The site 888 may be formed.
  • the member G10 includes a first portion G11, a second portion G13, and a third portion G15.
  • the first portion G11 is made of, for example, an insulating material.
  • the first portion G11 may be, for example, a substrate (including a sheet or a film). It is preferable that the material forming the first portion G11 be, for example, one having a low absorption loss with respect to the terahertz wave and a high transmittance of the terahertz wave.
  • a thin film sheet with a low dielectric constant, a Si substrate with high resistance, or the like can be used as a substrate constituting the first portion G11. When a Si substrate is used, it is easy to form a laminated structure.
  • Other examples of the material constituting the first portion G11 include, for example, a polymer and MgO.
  • the first portion G11 can be formed by transferring a pattern to a sheet-like material.
  • MgO MgO
  • the merit that the absorption loss of the terahertz wave can be reduced can be enjoyed.
  • a compound semiconductor SiC, GaN, GaAs, InP, sapphire, or the like
  • the resistivity may be increased by adjusting the dopant to the compound semiconductor.
  • the second portion G13 is made of, for example, a conductive material (for example, a metal (for example, Cu, Al, Au or the like)).
  • the second portion G13 can exhibit a desired function for terahertz waves.
  • the second portion G13 can exhibit, for example, at least one of the polarization function of the terahertz wave band, the frequency filter function, and the planar lens function.
  • the second portion G13 may include a plurality of layers.
  • the second portion G13 includes G131 and G132.
  • the plurality of layers G131 and G132 are disposed at different positions in the direction Z1 of FIG. 29 (ie, at different height positions).
  • Each of the layers G131 and G132 may exhibit a desired function.
  • the shapes and functions of the layers G131 and G132 in plan view may be different from each other, or may be identical to each other.
  • the second portion G13 may have a structure of only one layer (for example, only the layer G131).
  • the second portion G13 may include three or more layers.
  • the second portion G13 may include at least one band portion, at least one annular portion, and / or at least one dot in a plan view.
  • 30 to 34 show specific examples of the shape of the second portion G13 in plan view.
  • Each layer G131, G132 shown in FIG. 29 may have any of the shapes shown in FIGS. 30 to 34 described later.
  • the second portion G13 shown in FIG. 30 has a plurality of strip portions (i.e., slit structures) in a plan view.
  • the function that can be exhibited by the second portion G13 shown in FIG. 30 is, for example, the polarization function of the terahertz wave band or the frequency filter function.
  • the second portion G13 shown in FIG. 31 has a plurality of annular portions (ie, ring structures) in a plan view.
  • the function that can be exhibited by the second portion G13 shown in FIG. 31 is, for example, an antenna function or a light collecting function.
  • the second portion G13 shown in FIG. 32 has a plurality of dots (that is, a dot structure) in a plan view.
  • the function that can be exerted by the second portion G13 shown in FIG. 32 is, for example, a beam pattern control function or a two-dimensional resonator function.
  • the shape of planar view of 2nd part G13 may be shown in FIG.33 and FIG.34.
  • the third portion G15 is disposed on the second portion G13.
  • the third portion G15 is made of, for example, an insulating material. Examples of such insulating materials include, for example, SiO 2 , SiN, resins, and polymers.
  • the third portion G15 may include a plurality of layers G151 and G152. The plurality of layers G151 and G152 are stacked on one another.
  • the separation distance LL between the member G10 and the semiconductor component B1 shown in FIG. 29 may be smaller than, for example, one wavelength of the terahertz wave from the semiconductor component B1 (effective wavelength in the existing space).
  • the separation distance LL is smaller than one wavelength of the terahertz wave from the semiconductor component B1 (the effective wavelength in the existing space)
  • the terahertz wave from the semiconductor component B1 is appropriately transferred to the outside by using near field coupling. Can be released.
  • the separation distance LL may be smaller than 1 mm.
  • the layer G131 of the second portion G13 is formed in the first portion G11.
  • the layer G131 may be made of metal.
  • Layer G131 can be formed, for example, by patterning.
  • a layer G151 of the third portion G15 is formed.
  • the layer G151 can be formed, for example, by polishing the surface after forming an insulating material on the layer G131. In addition, the said surface grinding
  • polishing does not need to be performed.
  • a layer G132 and a layer G152 are sequentially formed. Thereafter, dicing is performed to manufacture a member G10 shown in FIG.
  • FIG. 41 shows a plan view of the device of this modification.
  • the apparatus shown in the figure is a combination of the configuration shown in FIG. 26 and the configuration shown in FIG.
  • the central point C11 of the semiconductor device B1 coincides with the symmetry point C12 of the second portion G13 (the second portion G13 is symmetrical with respect to the symmetry point C12 in plan view).
  • the configuration shown in FIG. 26 may be combined with the configuration shown in any of FIGS. FIGS. 42 to 45 each show a combination of the configuration shown in FIG. 26 and the configurations shown in FIGS. 31 to 34. Also in FIGS. 42 to 45, the central point C11 of the semiconductor device B1 coincides with the symmetry point C12 of the second portion G13 (the second portion G13 is symmetrical with respect to the symmetry point C12 in plan view). ing.
  • the space 851 formed in the resin portion 85 is filled with a gas. According to such a configuration, it is possible to suppress that the terahertz wave attenuates when passing through the resin, as compared with the case where the space 851 is filled with the resin. Further, according to this modification, the resin adhering to the semiconductor component B1 can reduce or prevent the occurrence of the problem that the boundary conditions change and the resonance mode in the chip substrate is affected.
  • the second portion G13 is made of a conductive material. According to such a configuration, it is possible to cause the second portion G13 to exhibit a desired function for the terahertz wave. Thereby, a more suitable terahertz device can be provided.
  • the second portion G13 may include a plurality of layers G131. In this case, for example, different functions can be exhibited in the plurality of layers G131.
  • the present disclosure includes embodiments regarding the following appendices.
  • Each of the first and second rectifying elements includes a first terminal and a second terminal, and in each of the first and second rectifying elements, the first terminal is directed to the second terminal.
  • the electrical direction is forward,
  • the first rectifying device has a first rising voltage value and a first breakdown voltage value
  • the second rectifying device has a second rising voltage value and a second breakdown voltage value.
  • the absolute value of the first rising voltage value is smaller than the absolute value of the first breakdown voltage value
  • the absolute value of the second rising voltage value is smaller than the absolute value of the second breakdown voltage value
  • the terahertz device according to Appendix 2 or 3 wherein the first rising voltage value and the second rising voltage value are larger than the lower limit of the absolute value of the value in the voltage range where the terahertz element oscillates the terahertz wave.
  • the terahertz device according to claim 4 wherein the first rising voltage value and the second rising voltage value are larger than an upper limit of an absolute value of values in a voltage region where the terahertz element oscillates a terahertz wave.
  • the semiconductor device further comprises a first conductor layer and a second conductor layer which are respectively formed on the semiconductor substrate and insulated from each other.
  • the first rectifying element and the second rectifying element are both formed on the semiconductor substrate, and are electrically interposed between the first conductor layer and the second conductor layer.
  • the terahertz device according to any one of 2 to 5.
  • the semiconductor device further includes a first semiconductor layer and a second semiconductor layer formed on the semiconductor substrate and stacked on each other.
  • the first semiconductor layer has a first conductivity type
  • the second semiconductor layer has a second conductivity type opposite to the first conductivity type.
  • the first terminal of the first rectifying element and the second terminal of the second rectifying element are constituted by the first conductive layer
  • [Supplementary Note 8] Further comprising first and second conductive portions insulated from each other; The terahertz element is electrically interposed between the first conductive site and the second conductive site, The first conductive portion extends in the first direction from the side where the terahertz element is located in a plan view, and the second conductive portion is first side when the terahertz element is located in a plan view. 5.
  • the terahertz device according to any of appendices 2 to 5, extending along a direction opposite to the direction.
  • the semiconductor device further comprises a support on which the semiconductor substrate is disposed, The terahertz element and a first wire bonded to the support, further comprising: The terahertz device according to claim 8, wherein the first wire is formed to avoid an imaginary straight line extending along the first conductive portion in a plan view.
  • the terahertz element and a second wire bonded to the support further comprising: The terahertz device according to claim 9, wherein the second wire is formed avoiding the virtual straight line in a plan view.
  • the terahertz device according to Appendix 9 or 10, wherein the first rectifying element and the second rectifying element are disposed on opposite sides of the virtual straight line in plan view.
  • the support includes a first conductive element and a second conductive element insulated from each other, The terahertz device and the first rectifying element are disposed in the first conductive element, and the second rectifying element is disposed in the second conductive element. Terahertz device.
  • the first conductive element includes a first portion, and a second portion extending from the first portion toward the second conductive element, The terahertz device according to claim 12, wherein the terahertz device is disposed at the second portion of the first conductive element.
  • the terahertz device according to appendix 13 wherein the first rectifying element is arranged at the second portion of the first conductive element.
  • the terahertz device according to Appendix 13 or 14 wherein the second conductive element includes a portion facing the first portion, and the second rectifying element is disposed at the portion in the second conductive element.
  • [Supplementary Note 16] A resin portion in which a space surrounding the terahertz element is formed; A member disposed in the resin portion and exposed to the air gap; 15. The terahertz device according to any one of appendices 1 to 15, wherein the space is filled with a gas.
  • the member includes a first portion disposed in the resin portion and a second portion disposed in the first portion, The terahertz device according to claim 16, wherein the second portion is made of a conductive material.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

Selon un aspect, la présente invention concerne un dispositif térahertz. Le dispositif térahertz comprend un substrat semi-conducteur, un élément térahertz et un premier élément de redressement. L'élément térahertz est disposé sur le substrat semi-conducteur. Le premier élément de redressement est connecté électriquement en parallèle à l'élément térahertz.
PCT/JP2018/036842 2017-10-18 2018-10-02 Dispositif térahertz WO2019077994A1 (fr)

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CN201880067881.5A CN111226305B (zh) 2017-10-18 2018-10-02 太赫兹器件
US16/755,839 US10957598B2 (en) 2017-10-18 2018-10-02 Terahertz device

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JP2017201992 2017-10-18
JP2017-201992 2017-10-18
JP2018-155898 2018-08-23
JP2018155898A JP7192188B2 (ja) 2017-10-18 2018-08-23 テラヘルツ装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070921A1 (fr) * 2019-10-10 2021-04-15 ローム株式会社 Dispositif térahertz

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005055366A1 (fr) * 2003-11-14 2005-06-16 Hitachi, Ltd. Radar monte sur un vehicule
JP2010206683A (ja) * 2009-03-05 2010-09-16 Japan Radio Co Ltd 平面アンテナ
JP2015180049A (ja) * 2014-02-28 2015-10-08 キヤノン株式会社 発振素子、及びこれを用いた発振器
JP2017069678A (ja) * 2015-09-29 2017-04-06 トッパン・フォームズ株式会社 電子機器及びその設計方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005055366A1 (fr) * 2003-11-14 2005-06-16 Hitachi, Ltd. Radar monte sur un vehicule
JP2010206683A (ja) * 2009-03-05 2010-09-16 Japan Radio Co Ltd 平面アンテナ
JP2015180049A (ja) * 2014-02-28 2015-10-08 キヤノン株式会社 発振素子、及びこれを用いた発振器
JP2017069678A (ja) * 2015-09-29 2017-04-06 トッパン・フォームズ株式会社 電子機器及びその設計方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070921A1 (fr) * 2019-10-10 2021-04-15 ローム株式会社 Dispositif térahertz

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