WO2019059602A3 - 발광 다이오드 패키지 - Google Patents

발광 다이오드 패키지 Download PDF

Info

Publication number
WO2019059602A3
WO2019059602A3 PCT/KR2018/010940 KR2018010940W WO2019059602A3 WO 2019059602 A3 WO2019059602 A3 WO 2019059602A3 KR 2018010940 W KR2018010940 W KR 2018010940W WO 2019059602 A3 WO2019059602 A3 WO 2019059602A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
diode package
hole
substrate
Prior art date
Application number
PCT/KR2018/010940
Other languages
English (en)
French (fr)
Other versions
WO2019059602A2 (ko
Inventor
박준용
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to CN202010022604.1A priority Critical patent/CN111192953B/zh
Priority to CN201880040215.2A priority patent/CN110770922B/zh
Publication of WO2019059602A2 publication Critical patent/WO2019059602A2/ko
Publication of WO2019059602A3 publication Critical patent/WO2019059602A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

발광 다이오드 패키지는 그 일부가 제거되어 형성된 관통홀을 가지는 기판, 상기 기판 상에 제공되며 제1 체결 부재와 전기적으로 연결된 제1 단자 및 제2 체결 부재와 전기적으로 연결된 제2 단자, 상기 기판 상에 제공되며, 상기 제1 및 제2 단자와 연결된 발광 다이오드 칩, 상기 제1 및 제2 체결 부재 중 적어도 하나와 결합되며 상기 관통홀 내에 제공된 코어, 및 상기 관통 홀 내에 제공되며 상기 관통 홀의 내주면을 커버하는 단자 절연부를 포함한다.
PCT/KR2018/010940 2017-09-19 2018-09-17 발광 다이오드 패키지 WO2019059602A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202010022604.1A CN111192953B (zh) 2017-09-19 2018-09-17 发光二极管封装件
CN201880040215.2A CN110770922B (zh) 2017-09-19 2018-09-17 发光二极管封装件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170120164A KR102506588B1 (ko) 2017-09-19 2017-09-19 발광 다이오드 패키지
KR10-2017-0120164 2017-09-19

Publications (2)

Publication Number Publication Date
WO2019059602A2 WO2019059602A2 (ko) 2019-03-28
WO2019059602A3 true WO2019059602A3 (ko) 2019-05-09

Family

ID=65810684

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/010940 WO2019059602A2 (ko) 2017-09-19 2018-09-17 발광 다이오드 패키지

Country Status (3)

Country Link
KR (1) KR102506588B1 (ko)
CN (2) CN111192953B (ko)
WO (1) WO2019059602A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110111049A (ko) * 2010-04-02 2011-10-10 주식회사 아이에스티 발광 다이오드 패키지 및 그 제조방법
KR20110126456A (ko) * 2010-05-17 2011-11-23 삼성엘이디 주식회사 발광다이오드 모듈
KR20130127838A (ko) * 2012-05-15 2013-11-25 삼성전자주식회사 발광소자 패키지
KR20150077208A (ko) * 2013-12-27 2015-07-07 서울바이오시스 주식회사 반도체 소자 패키지, 이를 포함하는 발광 다이오드 패키지 및 광학 모듈
KR20170030057A (ko) * 2015-09-08 2017-03-16 서울바이오시스 주식회사 발광 다이오드 패키지

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3566189B2 (ja) * 2000-08-10 2004-09-15 大東金属株式会社 外装板の取付金具
KR20120039590A (ko) * 2012-03-08 2012-04-25 장일호 고출력 백색광 엘이디 패키지 모듈 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110111049A (ko) * 2010-04-02 2011-10-10 주식회사 아이에스티 발광 다이오드 패키지 및 그 제조방법
KR20110126456A (ko) * 2010-05-17 2011-11-23 삼성엘이디 주식회사 발광다이오드 모듈
KR20130127838A (ko) * 2012-05-15 2013-11-25 삼성전자주식회사 발광소자 패키지
KR20150077208A (ko) * 2013-12-27 2015-07-07 서울바이오시스 주식회사 반도체 소자 패키지, 이를 포함하는 발광 다이오드 패키지 및 광학 모듈
KR20170030057A (ko) * 2015-09-08 2017-03-16 서울바이오시스 주식회사 발광 다이오드 패키지

Also Published As

Publication number Publication date
KR102506588B1 (ko) 2023-03-07
WO2019059602A2 (ko) 2019-03-28
KR20190031902A (ko) 2019-03-27
CN111192953B (zh) 2023-11-03
CN111192953A (zh) 2020-05-22
CN110770922A (zh) 2020-02-07
CN110770922B (zh) 2023-11-03

Similar Documents

Publication Publication Date Title
EP4235823A3 (en) Compact light emitting diode chip
WO2012044011A3 (en) Wafer level light emitting diode package and method of fabricating the same
WO2015044621A3 (fr) Dispositif optoelectronique a diodes electroluminescentes
WO2011056324A3 (en) Solid state emitter package including multiple emitters
WO2016064134A3 (en) Light emitting device and method of fabricating the same
EP2360744A3 (en) Light emitting diode and method of manufacturing the same
WO2010036055A3 (ko) 3족 질화물 반도체 발광소자
WO2009145502A3 (ko) 발광 소자
WO2014151012A3 (en) Active led module with led and transistor formed on same substrate
WO2009014376A3 (en) Light emitting device package and method of manufacturing the same
MY155671A (en) LED package and method for manufacturing same
EP3483932A3 (en) Ground via clustering for crosstalk mitigation
EP4060733A3 (en) Multi-chip packaging
WO2012108636A3 (en) Light emitting device having wavelength converting layer
EP2722899A3 (en) Light emitting device
EP2363895A3 (en) Light emitting device, method of manufacturing the same, light emitting device package
TW200610160A (en) Light emitting diode package and its packaging method
WO2009131335A3 (ko) 반도체 발광소자
USD876373S1 (en) Serrated light engine and circuit board
WO2017196100A3 (ko) 기판 커넥터
WO2009002129A3 (en) Semiconductor light emitting device and method of manufacturing the same
EP2262014A3 (en) Light emitting device, light emitting device package and lighting system having the same
CN104733598A (zh) 半导体发光结构及半导体封装结构
EP2669962A3 (en) Semiconductor light meitting device and method for manufacturing same
TW201613124A (en) Optical sensing module and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18859463

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18859463

Country of ref document: EP

Kind code of ref document: A2