WO2019047082A1 - 一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法 - Google Patents

一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法 Download PDF

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WO2019047082A1
WO2019047082A1 PCT/CN2017/100784 CN2017100784W WO2019047082A1 WO 2019047082 A1 WO2019047082 A1 WO 2019047082A1 CN 2017100784 W CN2017100784 W CN 2017100784W WO 2019047082 A1 WO2019047082 A1 WO 2019047082A1
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low
nano
aluminum surface
coating
improving
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PCT/CN2017/100784
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English (en)
French (fr)
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俞磊
陆朝晖
杨钰帆
陆朝阳
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深圳市同富达电子科技有限公司
扬州大学
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Priority to PCT/CN2017/100784 priority Critical patent/WO2019047082A1/zh
Publication of WO2019047082A1 publication Critical patent/WO2019047082A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms

Definitions

  • the invention relates to a method for improving the formation of a selenium-treated nano-coating on a low-frequency extended aluminum surface of an earphone.
  • Low frequency extension is one of the important indicators in the performance parameters of headphones. Its quality depends on the material of the earphone diaphragm. In general, the earphone diaphragm is made of aluminum, iron, copper, high polymer materials or even biological materials. Among them, aluminum film has the advantages of light weight, low price and easy processing, and is widely used. However, the earphone made of the conventional aluminum film has a poor low-frequency extension, and it is generally difficult to reach below 50 Hz, so that when the bass is played, there are disadvantages such as poor layering and distortion of the sound effect. Recently, we have found that the use of a common 20 ⁇ m aluminum film, after surface selenization to form a nano-coating, can significantly improve its low-frequency extension, down to 38Hz.
  • the invention provides a method for improving the formation of a selenium-treated nano-coating on a low-frequency extended aluminum surface of a headphone.
  • the method steps are simple and easy, so that the low frequency extension of the earphone can be greatly improved while using an inexpensive and easily available aluminum film.
  • the present invention proposes a method for improving the formation of a selenium-treated nano-coating on a low-frequency extended aluminum surface of a headphone to improve the low-frequency extension performance of an inexpensive aluminum film.
  • the invention provides a method for improving the formation of a selenium-treated nano-coating on a low-frequency extended aluminum surface of a headphone, and firstly, the aluminum film is in the water of glucose, 2-chloro-4nitrobenzene selenite at an ambient temperature of 40 to 90 ° C. After immersing in the mixed solution for 12 to 24 hours, it is baked at 500 to 600 ° C for 2 to 8 hours.
  • the invention has simple formula and simple steps. Therefore, it is suitable for large-scale production and has a good application prospect.
  • the dextrose mixed solution of the present invention has a glucose concentration of 0.2 to 0.8 mol/L, and a preferred concentration is 0.5 mol/L. In this concentration range, the diaphragm has the best low frequency extension.
  • the concentration of 2-chloro-4nitrobenzene selenite in the immersion mixed solution of the present invention is 0.001 to 0.005 mol/L, and a preferred concentration is 0.003 mol/L. In this concentration range, the diaphragm has the best low frequency extension.
  • the immersion temperature is 40 to 90 ° C, preferably 70 ° C; the immersion time is 12 to 24 h, preferably 18 h; the baking temperature is 500 to 600 ° C, preferably 550 ° C; and the baking time is 2 to 8 h, preferably 5 h.
  • the prepared material has the best low-frequency extension of the diaphragm.
  • the invention provides a method for improving the formation of a selenium-treated nano-coating on a low-frequency extended aluminum surface of a headphone.
  • the method steps are simple and easy, so that the low frequency extension of the earphone can be greatly improved while using an inexpensive and easily available aluminum film.
  • the aluminum film After immersing a 20 ⁇ m thick aluminum diaphragm (1 cm ⁇ 1 cm) in a mixed aqueous solution of 10 mL of glucose (0.5 mol/L) and 2-chloro-4 nitrophenyl selenium (0.003 mol/L) at 70 ° C for 18 hours, After calcination at 550 ° C for 5 h, the aluminum film can be formed to indicate the formation of selenium-treated nano-film.
  • the low frequency extension of the earphone made was measured to be 38 Hz.
  • Example 1 Other conditions were the same as in Example 1, and the aluminum film was treated with different concentrations of glucose solution. The experimental results are shown in Table 1.
  • Example 2 Other conditions were the same as in Example 1, and the aluminum film was treated with different concentrations of 2-chloro-4nitrobenzene selenite. The experimental results are shown in Table 2.
  • Example 3 Other conditions were the same as in Example 1, and the aluminum film was treated with different immersion temperatures. The experimental results are shown in Table 3.
  • Example 5 Other conditions were the same as in Example 1, and the aluminum film was treated at different baking temperatures. The experimental results are shown in Table 5.
  • Example 6 Other conditions were the same as in Example 1, and the aluminum film was treated with different baking time. The experimental results are shown in Table 6.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，先在40～90℃环境温度条件下，将铝膜在葡萄糖、2-氯-4硝基苯***的水混合溶液中浸渍12～24h后，在500～600℃焙烧2～8h。该方法步骤简单易行，可在使用廉价易得的铝膜的同时，大大改善耳机低频延伸。

Description

一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法 技术领域
本发明涉及一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法。
背景技术
低频延伸是耳机性能参数中的重要指标之一。其好坏取决于耳机振膜材质。一般来说，耳机振膜多有铝、铁、铜、高聚物材料乃至生物材质等制成。其中铝膜有质量轻，价格低廉，易加工等优点，被广泛应用。然而，传统铝膜制成的耳机，低频延伸较差，一般难以到达50Hz以下，从而在播放低音时，存在层次感差、音效失真等缺点。最近，我们发现，使用常见的20μm铝膜，经过表面硒化处理形成纳米涂层后，可显著改善其低频延伸，最低可达38Hz。
本发明提供了一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法。该方法步骤简单易行，从而可在使用廉价易得的铝膜的同时，大大改善耳机低频延伸。
发明内容
为了解决上述问题，本发明提出一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，以提升廉价的铝膜的低频延伸性能。
本发明通过以下技术方案实现的：
本发明提出一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，先在40～90℃环境温度条件下，将铝膜在葡萄糖、2-氯-4硝基苯***的水混合溶液中浸渍12～24h后，在500～600℃焙烧2～8h。
本发明配方简单，步骤简洁。因此，适合大规模生产，有较好的应用前景。
进一步地，本发明所述浸渍混合溶液中葡萄糖浓度为0.2～0.8mol/L，优选的浓度为0.5mol/L。在该浓度范围类，振膜低频延伸最佳。
本发明所述浸渍混合溶液中2-氯-4硝基苯***浓度为0.001～0.005mol/L，优选的浓度为0.003mol/L。在该浓度范围类，振膜低频延伸最佳。
所述浸渍温度为40～90℃，优选70℃；浸渍时间为12～24h，优选18h；烘焙温度为500～600℃，优选550℃；烘焙时间为2～8h，优选5h。在此浸渍、烘焙温度时间下所制备材料做振膜低频延伸最佳。
本发明的有益效果：
本发明提供了一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法。该方法步骤简单易行，从而可在使用廉价易得的铝膜的同时，大大改善耳机低频延伸。
具体实施方式
下面的实施例对本发明进行更详细的阐述，而不是对本发明的进一步限定。
实施例1
70℃下，将一片20μm厚铝振膜(1cm×1cm)在10mL葡萄糖(0.5mol/L)、2-氯-4硝基苯亚硒(0.003mol/L)的混合水溶液中浸渍18h后，在550℃下焙烧5h，可制在铝膜表明形成硒处理纳米膜。测定其制成耳机的低频延伸为38Hz。
实施例2
其他条件同实施例1，使用不同浓度的葡萄糖溶液处理铝膜，实验结果见表1。
表1 不同浓度的葡萄糖溶液处理铝膜的实验结果
Figure PCTCN2017100784-appb-000001
Figure PCTCN2017100784-appb-000002
由上述结果可知，葡萄糖溶液浓度为0.5mol/L时，处理后的铝膜低频延伸最低(编号4)。
实施例3
其他条件同实施例1，使用不同浓度的2-氯-4硝基苯***处理铝膜，实验结果见表2。
表2 不同浓度的2-氯-4硝基苯***处理铝膜的实验结果
Figure PCTCN2017100784-appb-000003
由上述结果可知，2-氯-4硝基苯***浓度为0.003mol/L时，铝膜低频延伸最低(编号3)。
实施例4
其他条件同实施例1，使用不同浸渍温度处理铝膜，实验结果见表3。
表3 不同浸渍温度处理铝膜的实验结果
Figure PCTCN2017100784-appb-000004
由上述结果可知，浸渍温度为70度时，效果最佳(编号4)。
实施例5
其他条件同实施例1，使用不同浸渍时间处理铝膜，实验结果见表4。
表4 不同浸渍时间处理铝膜的实验结果
Figure PCTCN2017100784-appb-000005
由上述结果可知，浸渍时间为18小时最佳(编号3)。
实施例6
其他条件同实施例1，使用不同焙烧温度处理铝膜，实验结果见表5。
表5 不同焙烧温度处理铝膜的实验结果
Figure PCTCN2017100784-appb-000006
由上述结果可知，焙烧温度为550度时效果最佳(编号3)。
实施例7
其他条件同实施例1，使用不同焙烧时间处理铝膜，实验结果见表6。
表6 不同焙烧时间处理铝膜的实验结果
Figure PCTCN2017100784-appb-000007
由上述结果可知，焙烧时间5小时，效果最佳(编号4)。

Claims (13)

  1. 一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：将铝膜在葡萄糖、2-氯-4硝基苯***的水溶液中浸渍后，再加以焙烧，即可在其表面形成硒处理纳米涂层，将铝膜应用于耳机振膜，可改善耳机低频延伸性能。
  2. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：所述葡萄糖溶液浓度为0.2～0.8mol/L。
  3. 根据权利要求2所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：所述葡萄糖溶液浓度为0.5mol/L。
  4. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：所述2-氯-4硝基苯***溶液浓度为0.001～0.005mol/L；
  5. 根据权利要求4所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：所述2-氯-4硝基苯***溶液浓度为0.003mol/L。
  6. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：浸渍温度为40～90℃。
  7. 根据权利要求6所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：浸渍温度为70℃。
  8. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：浸渍时间为12～24h。
  9. 根据权利要求8所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：浸渍时间为18h。
  10. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：烘焙温度为500～600℃。
  11. 根据权利要求10所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：烘焙温度为550℃。
  12. 根据权利要求1所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：烘焙时间为2～8h。
  13. 根据权利要求12所述改善耳机低频延伸铝表面硒处理纳米涂层的形成方法，其特征在于：烘焙时间为5h。
PCT/CN2017/100784 2017-09-06 2017-09-06 一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法 WO2019047082A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662499A (en) * 1979-10-29 1981-05-28 Sanyo Electric Co Ltd Diaphragm plate for speaker and its manufacture
JPS5685993A (en) * 1979-12-14 1981-07-13 Matsushita Electric Ind Co Ltd Diaphragm of acoustic transducer and its preparation method
CN1100883A (zh) * 1993-09-24 1995-03-29 超固企业有限公司 可改变音效的薄膜及其制作方法
CN102187687A (zh) * 2008-10-15 2011-09-14 易音特电子株式会社 用于声音转换器的膜片和包括膜片的声音转换器
CN103067828A (zh) * 2012-12-25 2013-04-24 苏州恒听电子有限公司 一种具有低频补偿功能的振膜及其制备方法
CN103957494A (zh) * 2014-05-20 2014-07-30 中国科学院宁波材料技术与工程研究所 振动膜及其制法和应用

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662499A (en) * 1979-10-29 1981-05-28 Sanyo Electric Co Ltd Diaphragm plate for speaker and its manufacture
JPS5685993A (en) * 1979-12-14 1981-07-13 Matsushita Electric Ind Co Ltd Diaphragm of acoustic transducer and its preparation method
CN1100883A (zh) * 1993-09-24 1995-03-29 超固企业有限公司 可改变音效的薄膜及其制作方法
CN102187687A (zh) * 2008-10-15 2011-09-14 易音特电子株式会社 用于声音转换器的膜片和包括膜片的声音转换器
CN103067828A (zh) * 2012-12-25 2013-04-24 苏州恒听电子有限公司 一种具有低频补偿功能的振膜及其制备方法
CN103957494A (zh) * 2014-05-20 2014-07-30 中国科学院宁波材料技术与工程研究所 振动膜及其制法和应用

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