WO2018168435A1 - 感光性シロキサン樹脂組成物、硬化膜およびタッチパネル用部材 - Google Patents
感光性シロキサン樹脂組成物、硬化膜およびタッチパネル用部材 Download PDFInfo
- Publication number
- WO2018168435A1 WO2018168435A1 PCT/JP2018/007150 JP2018007150W WO2018168435A1 WO 2018168435 A1 WO2018168435 A1 WO 2018168435A1 JP 2018007150 W JP2018007150 W JP 2018007150W WO 2018168435 A1 WO2018168435 A1 WO 2018168435A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- group
- siloxane resin
- polysiloxane
- photosensitive siloxane
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 106
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims abstract description 97
- -1 polysiloxane Polymers 0.000 claims abstract description 240
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000178 monomer Substances 0.000 claims abstract description 27
- 125000004432 carbon atom Chemical group C* 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 125000005504 styryl group Chemical group 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 150000001244 carboxylic acid anhydrides Chemical group 0.000 claims description 12
- 125000000962 organic group Chemical group 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000003839 salts Chemical group 0.000 claims description 8
- 239000003505 polymerization initiator Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 28
- 238000003860 storage Methods 0.000 abstract description 16
- 238000011161 development Methods 0.000 abstract description 15
- 239000003999 initiator Substances 0.000 abstract description 7
- AFINAILKDBCXMX-PBHICJAKSA-N (2s,3r)-2-amino-3-hydroxy-n-(4-octylphenyl)butanamide Chemical compound CCCCCCCCC1=CC=C(NC(=O)[C@@H](N)[C@@H](C)O)C=C1 AFINAILKDBCXMX-PBHICJAKSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 76
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 66
- 150000003254 radicals Chemical class 0.000 description 36
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 34
- 239000002904 solvent Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 26
- 238000011156 evaluation Methods 0.000 description 24
- 238000003786 synthesis reaction Methods 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 20
- 239000007787 solid Substances 0.000 description 20
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 18
- 238000006460 hydrolysis reaction Methods 0.000 description 17
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 16
- 239000004925 Acrylic resin Substances 0.000 description 15
- 229920000178 Acrylic resin Polymers 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 12
- 150000001282 organosilanes Chemical class 0.000 description 12
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 12
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 11
- 238000001723 curing Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910019142 PO4 Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 235000021317 phosphate Nutrition 0.000 description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Chemical group 0.000 description 7
- 238000009835 boiling Methods 0.000 description 7
- 230000007062 hydrolysis Effects 0.000 description 7
- 239000012046 mixed solvent Substances 0.000 description 7
- 239000010452 phosphate Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- UNPYQHQUDMGKJW-UHFFFAOYSA-N 6-trimethoxysilylhex-1-en-3-one Chemical compound CO[Si](OC)(OC)CCCC(=O)C=C UNPYQHQUDMGKJW-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 4
- PTJWCLYPVFJWMP-UHFFFAOYSA-N 2-[[3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)COCC(CO)(CO)CO PTJWCLYPVFJWMP-UHFFFAOYSA-N 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000003377 acid catalyst Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000003456 ion exchange resin Substances 0.000 description 4
- 229920003303 ion-exchange polymer Polymers 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 150000002923 oximes Chemical class 0.000 description 4
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 3
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 3
- WGRZHLPEQDVPET-UHFFFAOYSA-N 2-methoxyethoxysilane Chemical compound COCCO[SiH3] WGRZHLPEQDVPET-UHFFFAOYSA-N 0.000 description 3
- ZADOWCXTUZWAKL-UHFFFAOYSA-N 3-(3-trimethoxysilylpropyl)oxolane-2,5-dione Chemical compound CO[Si](OC)(OC)CCCC1CC(=O)OC1=O ZADOWCXTUZWAKL-UHFFFAOYSA-N 0.000 description 3
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 150000008366 benzophenones Chemical class 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- QYZFTMMPKCOTAN-UHFFFAOYSA-N n-[2-(2-hydroxyethylamino)ethyl]-2-[[1-[2-(2-hydroxyethylamino)ethylamino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCNCCO QYZFTMMPKCOTAN-UHFFFAOYSA-N 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- JRSJRHKJPOJTMS-MDZDMXLPSA-N trimethoxy-[(e)-2-phenylethenyl]silane Chemical compound CO[Si](OC)(OC)\C=C\C1=CC=CC=C1 JRSJRHKJPOJTMS-MDZDMXLPSA-N 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- SEILKFZTLVMHRR-UHFFFAOYSA-N 2-phosphonooxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOP(O)(O)=O SEILKFZTLVMHRR-UHFFFAOYSA-N 0.000 description 2
- BNDRWEVUODOUDW-UHFFFAOYSA-N 3-Hydroxy-3-methylbutan-2-one Chemical compound CC(=O)C(C)(C)O BNDRWEVUODOUDW-UHFFFAOYSA-N 0.000 description 2
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 2
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 2
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- NQSMEZJWJJVYOI-UHFFFAOYSA-N Methyl 2-benzoylbenzoate Chemical compound COC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 NQSMEZJWJJVYOI-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
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- SYPWIQUCQXCZCF-UHFFFAOYSA-N dimethoxy-methyl-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CC(C)OCC1CO1 SYPWIQUCQXCZCF-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- UBCPEZPOCJYHPM-UHFFFAOYSA-N dimethoxy-methyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(OC)OC UBCPEZPOCJYHPM-UHFFFAOYSA-N 0.000 description 1
- WQTNGCZMPUCIEX-UHFFFAOYSA-N dimethoxy-methyl-prop-2-enylsilane Chemical compound CO[Si](C)(OC)CC=C WQTNGCZMPUCIEX-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- BNKAXGCRDYRABM-UHFFFAOYSA-N ethenyl dihydrogen phosphate Chemical class OP(O)(=O)OC=C BNKAXGCRDYRABM-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- ORBFAMHUKZLWSD-UHFFFAOYSA-N ethyl 2-(dimethylamino)benzoate Chemical compound CCOC(=O)C1=CC=CC=C1N(C)C ORBFAMHUKZLWSD-UHFFFAOYSA-N 0.000 description 1
- XPKFLEVLLPKCIW-UHFFFAOYSA-N ethyl 4-(diethylamino)benzoate Chemical compound CCOC(=O)C1=CC=C(N(CC)CC)C=C1 XPKFLEVLLPKCIW-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- YYDBOMXUCPLLSK-UHFFFAOYSA-N ethyl-dimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CC[Si](OC)(OC)CCCOCC1CO1 YYDBOMXUCPLLSK-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
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- 150000002334 glycols Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- XLSMFKSTNGKWQX-UHFFFAOYSA-N hydroxyacetone Chemical compound CC(=O)CO XLSMFKSTNGKWQX-UHFFFAOYSA-N 0.000 description 1
- 208000009322 hypertrophic pyloric stenosis Diseases 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 1
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- 238000013035 low temperature curing Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XMYQHJDBLRZMLW-UHFFFAOYSA-N methanolamine Chemical compound NCO XMYQHJDBLRZMLW-UHFFFAOYSA-N 0.000 description 1
- 229940087646 methanolamine Drugs 0.000 description 1
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- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- XVTQAXXMUNXFMU-UHFFFAOYSA-N methyl 2-(3-oxo-2-pyridin-2-yl-1h-pyrazol-5-yl)acetate Chemical compound N1C(CC(=O)OC)=CC(=O)N1C1=CC=CC=N1 XVTQAXXMUNXFMU-UHFFFAOYSA-N 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
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- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- FVMMYGUCXRZVPJ-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(CC)OCC1CO1 FVMMYGUCXRZVPJ-UHFFFAOYSA-N 0.000 description 1
- CFUDQABJYSJIQY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(C)OCC1CO1 CFUDQABJYSJIQY-UHFFFAOYSA-N 0.000 description 1
- NLKPPXKQMJDBFO-UHFFFAOYSA-N triethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OCC)(OCC)OCC)CCC2OC21 NLKPPXKQMJDBFO-UHFFFAOYSA-N 0.000 description 1
- KPNCYSTUWLXFOE-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCC(C)OCC1CO1 KPNCYSTUWLXFOE-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- FFJVMNHOSKMOSA-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCC([Si](OC)(OC)OC)OCC1CO1 FFJVMNHOSKMOSA-UHFFFAOYSA-N 0.000 description 1
- DAVVOFDYOGMLNQ-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)C(C)OCC1CO1 DAVVOFDYOGMLNQ-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- KKFKPRKYSBTUDV-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CC(CC)OCC1CO1 KKFKPRKYSBTUDV-UHFFFAOYSA-N 0.000 description 1
- HTVULPNMIHOVRU-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CC(C)OCC1CO1 HTVULPNMIHOVRU-UHFFFAOYSA-N 0.000 description 1
- DBUFXGVMAMMWSD-UHFFFAOYSA-N trimethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OC)(OC)OC)CCC2OC21 DBUFXGVMAMMWSD-UHFFFAOYSA-N 0.000 description 1
- ZQPNGHDNBNMPON-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCC(C)OCC1CO1 ZQPNGHDNBNMPON-UHFFFAOYSA-N 0.000 description 1
- ZOWVSEMGATXETK-UHFFFAOYSA-N trimethoxy-[4-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(CCCC[Si](OC)(OC)OC)CCC2OC21 ZOWVSEMGATXETK-UHFFFAOYSA-N 0.000 description 1
- CESKYMDZTHKIPO-UHFFFAOYSA-N tris(2-methoxyethoxy)-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound COCCO[Si](OCCOC)(OCCOC)CCCOCC1CO1 CESKYMDZTHKIPO-UHFFFAOYSA-N 0.000 description 1
- OLTVTFUBQOLTND-UHFFFAOYSA-N tris(2-methoxyethoxy)-methylsilane Chemical compound COCCO[Si](C)(OCCOC)OCCOC OLTVTFUBQOLTND-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- GBNDTYKAOXLLID-UHFFFAOYSA-N zirconium(4+) ion Chemical compound [Zr+4] GBNDTYKAOXLLID-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/068—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
Definitions
- the present invention relates to a photosensitive siloxane resin composition, a cured film using the same, a laminate, a manufacturing method thereof, and a touch panel member.
- the sensor substrate of the capacitive touch panel has wiring in which ITO (Indium Tin Oxide) and metal (silver, molybdenum, aluminum, etc.) are patterned on glass, and an insulating film, ITO, and metal are placed at the intersection of the wiring.
- ITO Indium Tin Oxide
- metal silver, molybdenum, aluminum, etc.
- a structure having a protective film for protection is common.
- the touch panel system is an out-cell type in which a touch panel layer is formed between the cover glass and the liquid crystal panel, an OGS (One Glass Solution) type in which the touch panel layer is directly formed on the cover glass, and a touch panel layer is formed on the liquid crystal panel. It is roughly classified into an on-cell type and an in-cell type in which a touch panel layer is formed inside a liquid crystal panel. In recent years, an on-cell type has been actively developed because the manufacturing process can be simplified as compared with the prior art. In the on-cell type, since the touch panel layer is formed directly on the liquid crystal panel, it is necessary to form the wiring, the protective film, and the insulating film at a low temperature lower than the heat resistant temperature of the liquid crystal.
- the protective film of the touch panel is often formed of high-hardness inorganic SiO 2 , SiN x , a photosensitive transparent material, or the like, and the insulating film is often formed of a photosensitive transparent material.
- inorganic materials such as SiO 2 and SiN x need to be formed by high-temperature film formation by CVD (Chemical Vapor Deposition), and are difficult to apply to the on-cell type. Therefore, there is a need for a photosensitive transparent material that can be cured at low temperature, has high hardness, is excellent in chemical resistance and substrate adhesion, and can be patterned.
- a photosensitive transparent material As a photosensitive transparent material, a polymer having a (meth) acryloyl group and an acid group, a trifunctional or higher functional ethylenically unsaturated compound, a photopolymerization initiator, and a phosphate ester structure and an ethylenically unsaturated group
- a photosensitive resin composition containing a compound for example, see Patent Document 1
- a negative-type photosensitive resin composition for photospacers that can be developed with alkali for example, see Patent Document 2 has been proposed.
- Patent Document 1 has a problem of insufficient hardness.
- the inclusion of the phosphoric acid compound improves the substrate adhesion, but there is a problem that the storage stability is lowered due to the strong acidity of the phosphoric acid compound.
- Patent Document 2 discloses a salt with a cation such as a quaternary ammonium ion as a salt of an acidic group in a polyfunctional (meth) acrylate monomer.
- a salt with a cation such as a quaternary ammonium ion as a salt of an acidic group in a polyfunctional (meth) acrylate monomer.
- the resolution is lowered.
- problems such as deterioration of pattern processability such as generation of development residues and chemical resistance.
- the present invention is a photosensitivity that can be cured at low temperature, has excellent storage stability and resolution, can suppress development residue, has high hardness, and has a high chemical resistance and substrate adhesion. It is an object to provide a siloxane resin composition.
- the present invention is a photosensitive siloxane resin composition containing (A) polysiloxane, (B) a photoradical polymerization initiator, (C) a polyfunctional monomer, and (D) a phosphoric acid derivative amine salt.
- the photosensitive siloxane resin composition of the present invention can be cured at low temperature, has excellent storage stability and resolution, and can suppress development residue. According to the photosensitive siloxane resin composition of the present invention, a cured film having high hardness and excellent chemical resistance and substrate adhesion can be obtained.
- the photosensitive siloxane resin composition of the present invention contains (A) polysiloxane, (B) a photo radical polymerization initiator, (C) a polyfunctional monomer, and (D) a phosphoric acid derivative amine salt.
- A By containing polysiloxane, the thermal polymerization (condensation) of polysiloxane proceeds by heating and the crosslink density is improved, so that a cured film having high hardness can be obtained.
- polymerization of (C) polyfunctional monomer proceeds by radicals generated from (B) the photoradical polymerization initiator by light irradiation.
- the exposed portion of the photosensitive siloxane resin composition is insolubilized in the alkaline aqueous solution, and a negative pattern can be formed.
- low temperature curing becomes possible by combining (A) thermal polymerization reaction of polysiloxane and (C) photo radical polymerization reaction of polyfunctional monomer.
- C photo radical polymerization reaction of polyfunctional monomer.
- D a phosphoric acid derivative amine salt
- (A) Polysiloxane is a hydrolyzed / dehydrated condensate of organosilane, and in the present invention, it preferably has (a1) a radical polymerizable group and (a2) a hydrophilic group.
- the (a1) radical polymerizable group in the polysiloxane the hardness and chemical resistance can be further improved. Since the contrast of the degree of cure between the exposed area and the unexposed area is easily obtained, the resolution can be further improved and development residues can be further suppressed.
- a hydrophilic group (a2) in the polysiloxane the developability can be further improved and development residues can be further suppressed.
- the (a1) radical polymerizable group examples include a vinyl group, an ⁇ -methylvinyl group, an allyl group, a styryl group, and a (meth) acryloyl group. You may have 2 or more types of these. Among these, a styryl group is preferable, and the hardness and chemical resistance of the cured film and the adhesion to the MAM (molybdenum / aluminum / molybdenum) substrate can be further improved.
- the polysiloxane preferably contains (a1) 20 to 85 mol% of repeating units having a styryl group as a radical polymerizable group in all repeating units.
- the hardness and chemical resistance of the cured film and the adhesion to the MAM substrate can be further improved. More preferably, it contains 40 mol% or more of repeating units having a styryl group.
- the resolution can be further improved by containing 85 mol% or less of a repeating unit having a styryl group. It is more preferable to contain 70 mol% or less of repeating units having a styryl group.
- the content ratio of the organosilane unit having a styryl group is measured by 29 Si-NMR, and the ratio of the integrated value of Si derived from the organosilane unit having a styryl group to the integrated value of the entire Si derived from the organosilane is calculated. Can be obtained.
- Examples of the (a2) hydrophilic group include a carboxyl group, a carboxylic acid anhydride group, a sulfonic acid group, a phenolic hydroxyl group, and a hydroxyimide group. You may have 2 or more types of these. Among these, a carboxyl group and a carboxylic anhydride group are preferable, and a carboxylic anhydride group is more preferable from the viewpoint of further suppressing development residue and further improving storage stability.
- the (a) polysiloxane preferably contains 5 to 20 mol% of (a2) repeating units having a carboxylic anhydride group as a hydrophilic group in all repeating units.
- a development residue can be suppressed more by containing 5 mol% or more of repeating units which have a carboxylic anhydride group.
- the resolution can be further improved by containing 20 mol% or less of a repeating unit having a carboxylic acid anhydride group.
- the content ratio of the organosilane unit containing a carboxylic acid anhydride group is determined by measuring 29 Si-NMR, and the Si content derived from the organosilane unit having a carboxylic acid anhydride group with respect to the integrated value of the entire Si derived from the organosilane. It can be obtained by calculating the ratio of the integral value.
- the polysiloxane having (a1) radical polymerizable group and (a2) hydrophilic group hydrolyzes a plurality of organosilane compounds including, for example, an organosilane compound having a radical polymerizable group and an organosilane compound having a hydrophilic group. And can be obtained by dehydration condensation.
- An organosilane compound other than an organosilane compound having a radical polymerizable group and an organosilane compound having a hydrophilic group may be hydrolyzed and dehydrated together with them.
- organosilane compound having a radical polymerizable group examples include vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri (methoxyethoxy) silane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, and vinylmethyldi (methoxyethoxy) silane.
- Organosilane compounds having a vinyl group Organosilane compounds having an allyl group such as allyltrimethoxysilane, allyltriethoxysilane, allyltri (methoxyethoxy) silane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, allylmethyldi (methoxyethoxy) silane Compound: styryltrimethoxysilane, styryltriethoxysilane, styryltri (methoxyethoxy) silane, styrylmethyldimethoxysilane, styryl Organosilane compounds having a styryl group such as methyldiethoxysilane, styrylmethyldimethoxysilane, styrylmethyldi (methoxyethoxy) silane; ⁇ -acryloylpropyltrimethoxysilane, ⁇ -acryloylpropyltri
- organosilane compounds having a styryl group are preferable, styryltrimethoxysilane and styryltriethoxysilane are more preferable, and styryltrimethoxysilane is more preferable.
- an organosilane compound having a hydrophilic group an organosilane compound having a carboxylic acid group and / or a carboxylic acid anhydride group is preferable, and an organosilane compound having a carboxylic acid anhydride group is more preferable.
- organosilane compound having a carboxylic acid anhydride group examples include organosilane compounds having a structure represented by any one of the following general formulas (3) to (5). Two or more of these may be used.
- R 6 to R 8 , R 10 to R 12 and R 14 to R 16 are each independently an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 6 carbon atoms.
- An alkoxy group having 1 to 6 carbon atoms is preferred.
- R 9 , R 13 and R 17 are each independently a single bond, a divalent chain aliphatic hydrocarbon group having 1 to 10 carbon atoms, or 3 to 16 carbon atoms.
- —C 2 H 4 —, —C 3 H 6 —, —C 4 H 8 —, —O—, —C 3 H 6 OCH 2 CH (OH) CH 2 O 2 C—, —CO—, —CO 2 —, —CONH—, a group having the following structure, and the like are preferable.
- h and k each independently represents an integer of 0 to 3.
- An integer of 0 to 2 is preferred.
- organosilane compound having a structure represented by the general formula (3) examples include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylsilylpropyl succinic anhydride, and 3-triphenoxysilylpropyl succinic acid. An acid anhydride etc. are mentioned.
- organosilane compound having a structure represented by the general formula (4) examples include 3-trimethoxysilylpropylcyclohexyl dicarboxylic acid anhydride.
- organosilane compound having a structure represented by the general formula (5) examples include 3-trimethoxysilylsilylpropylphthalic anhydride.
- organosilane compound other than the organosilane compound having a radical polymerizable group and the organosilane compound having a hydrophilic group examples include, for example, methyltrimethoxysilane, methyltriethoxysilane, methyltri (methoxyethoxy) silane, methyltripropoxysilane, Methyltriisopropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, hexyltrimethoxysilane, octadecyltrimethoxysilane, octadecyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxy Silane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-chloropropyltrimethoxys
- the weight average molecular weight (Mw) of the polysiloxane is preferably 1,000 or more, and more preferably 2,000 or more, from the viewpoint of coating properties.
- Mw of (A) polysiloxane is preferably 50,000 or less, and more preferably 20,000 or less.
- Mw of (A) polysiloxane in the present invention refers to a polystyrene conversion value measured by gel per emission chromatography (GPC).
- the content of (A) polysiloxane can be arbitrarily set depending on the desired film thickness and application, but is 10 to 80% by weight in the photosensitive siloxane resin composition. Is common. Moreover, 10 weight% or more is preferable in solid content of the photosensitive siloxane resin composition, and, as for content of (A) polysiloxane, 30 weight% or more is more preferable. On the other hand, the content of (A) polysiloxane is preferably 70% by weight or less in the solid content of the photosensitive siloxane resin composition.
- the polysiloxane can be obtained by hydrolyzing the aforementioned organosilane compound and then subjecting the hydrolyzate to a dehydration condensation reaction in the presence of a solvent or without a solvent.
- Various conditions in the hydrolysis can be set according to the physical properties suitable for the intended application in consideration of the reaction scale, the size and shape of the reaction vessel, and the like. Examples of various conditions include acid concentration, reaction temperature, reaction time, and the like.
- an acid catalyst such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polyvalent carboxylic acid or its anhydride, or an ion exchange resin can be used.
- an acidic aqueous solution containing formic acid, acetic acid and / or phosphoric acid is preferable.
- the amount of the acid catalyst added is 0.05 wt.
- the addition amount of the acid catalyst is preferably 20 parts by weight or less and more preferably 10 parts by weight or less with respect to 100 parts by weight of the total alkoxysilane compound.
- the total amount of the alkoxysilane compound means an amount including all of the alkoxysilane compound, its hydrolyzate and its condensate, and the same shall apply hereinafter.
- the hydrolysis reaction can be performed in a solvent.
- the solvent can be appropriately selected in consideration of the stability, wettability, volatility, etc. of the photosensitive siloxane resin composition.
- Examples of the solvent include methanol, ethanol, propanol, isopropanol, butanol, isobutanol, t-butanol, pentanol, 4-methyl-2-pentanol, 3-methyl-2-butanol, and 3-methyl-3-methoxy.
- -1-alcohols such as butanol and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether , Propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether, ethylene glycol dimethyl ether, ethylene glycol Ethers such as coal diethyl ether, ethylene glycol dibutyl ether, diethyl ether; ketones such as methyl ethyl ketone, acetyl acetone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclopentanone, 2-heptanone; dimethylformamide, Amides such as dimethylacetamide;
- diacetone alcohol propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene Glycol mono-t-butyl ether, ⁇ -butyrolactone and the like are preferably used.
- the hydrolysis can be carried out without a solvent. After completion of the hydrolysis reaction, it is also preferable to adjust the concentration to be appropriate as the photosensitive siloxane resin composition by adding a solvent. It is also possible to distill and remove all or part of the product alcohol etc. by heating and / or under reduced pressure after hydrolysis and then adding a suitable solvent.
- the amount of the solvent added is preferably 50 parts by weight or more and more preferably 80 parts by weight or more with respect to 100 parts by weight of the total alkoxysilane compound from the viewpoint of suppressing gel formation.
- the addition amount of the solvent is preferably 500 parts by weight or less and more preferably 200 parts by weight or less with respect to 100 parts by weight of the total alkoxysilane compound from the viewpoint of allowing hydrolysis to proceed more rapidly.
- water used for the hydrolysis reaction ion-exchanged water is preferable.
- the amount of water can be arbitrarily set, but is preferably 1.0 to 4.0 mol with respect to 1 mol of all alkoxysilane compounds.
- Examples of the dehydration condensation method include a method of heating a silanol compound solution obtained by hydrolysis reaction of an organosilane compound as it is.
- the heating temperature is preferably 50 ° C. or higher and the boiling point of the solvent or lower, and the heating time is preferably 1 to 100 hours.
- reheating or addition of a base catalyst may be performed.
- an appropriate amount such as the generated alcohol may be distilled and removed under heating and / or reduced pressure, and then a suitable solvent may be added.
- the polysiloxane solution after hydrolysis and dehydration condensation preferably does not contain the catalyst, and the catalyst can be removed as necessary.
- the catalyst removal method water washing, treatment with an ion exchange resin, and the like are preferable from the viewpoint of easy operation and removability.
- Water washing is a method of concentrating an organic layer obtained by diluting a polysiloxane solution with an appropriate hydrophobic solvent and then washing several times with water with an evaporator or the like.
- the treatment with an ion exchange resin is a method in which a polysiloxane solution is brought into contact with an appropriate ion exchange resin.
- the photoradical polymerization initiator may be any one that decomposes and / or reacts with light (including ultraviolet rays and electron beams) to generate radicals.
- the photoradical polymerization initiator may be any one that decomposes and / or reacts with light (including ultraviolet rays and electron beams) to generate radicals.
- 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropan-1-one 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl ⁇ -aminoalkylphenone compounds such as -phenyl) -butan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1
- 2,4,6-trimethylbenzoylphenyl Phosphine oxide bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2,6-dimethoxy
- a benzyl ketal compound 2-hydroxy-2-methyl-1-phenylpropan-1-one 1- (4-Isopropylphenyl) -2-hydroxy-2-methylpropan-1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1-hydroxycyclohexyl-phenylketone ⁇ -hydroxy ketone compounds such as: benzophenone, 4,4-bis (dimethylamino) benzophenone, 4,4-bis (diethylamino) benzophenone, methyl O-benzoylbenzoate, 4-phenylbenzophenone, 4,4-dichlorobenzophenone, Benzophenone compounds such as hydroxybenzophenone, 4-benzoyl-4′-methyl-diphenyl sulfide, alkylated benzophenone, 3,3 ′, 4,4′-tetra (t-butylperoxycarbonyl) benzophenone; 2,2-diethoxy Acetov
- acylphosphine oxide compounds and oxime ester compounds are preferred from the viewpoint of further improving exposure sensitivity and hardness of the cured film. Since these compounds are also involved in crosslinking of siloxane as an acid during light irradiation and thermosetting, the hardness can be further improved.
- the content of the (B) photoradical polymerization initiator in the photosensitive siloxane resin composition of the present invention is preferably 0.01% by weight or more, preferably 1% by weight in the solid content from the viewpoint of effectively promoting radical curing. The above is more preferable.
- the content of (B) radical photopolymerization initiator is 20% by weight or less in the solid content. Is preferable, and 10 weight% or less is more preferable.
- a polyfunctional monomer refers to a compound having two or more ethylenically unsaturated double bonds in the molecule. Considering the ease of radical polymerization, the (C) polyfunctional monomer preferably has a (meth) acryl group.
- the double bond equivalent of the (C) polyfunctional monomer is preferably 80 g / mol or more from the viewpoint of further improving the sensitivity in pattern processing and the hardness of the cured film.
- the double bond equivalent of the polyfunctional monomer (C) is preferably 400 g / mol or less from the viewpoint of further improving the resolution in pattern processing.
- the polyfunctional monomer for example, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylol Methylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol diacrylate 1,9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclo
- the content of the (C) polyfunctional monomer in the photosensitive siloxane resin composition of the present invention is preferably 1% by weight or more in the solid content from the viewpoint of effectively promoting radical curing.
- the content of the polyfunctional monomer (C) is preferably 40% by weight or less in the solid content from the viewpoint of suppressing radical excess reaction and further improving the resolution.
- Phosphoric acid derivative amine salt in the present invention refers to a salt of (d1) phosphoric acid derivative compound and (d2) amine compound. Part of the photosensitive siloxane resin composition may be dissociated.
- Examples of phosphoric acid derivative compounds include phosphorous acid, phosphorous acid ester, phosphonic acid, phosphonic acid ester, phosphinic acid, phosphinic acid ester, and phosphoric acid ester. Two or more of these may be used. Among these, a phosphoric acid derivative compound having a structure represented by the following general formula (1) is preferable. Since the phosphoric acid derivative compound having a structure represented by the following general formula (1) has a radical polymerizable group and a hydroxyl group, when the photosensitive siloxane resin composition is cured by heat and / or light, phosphoric acid derivative compound The acid derivative amine salt is efficiently incorporated into the (A) polysiloxane, and bleeding out can be suppressed. Moreover, chemical resistance and adhesion with the MAM substrate can be further improved.
- R 1 represents a monovalent organic group having a radical polymerizable group.
- the monovalent organic group having a radical polymerizable group for example, at least a part of hydrogen of an alkyl group having 1 to 10 carbon atoms is a vinyl group, an ⁇ -methylvinyl group, an allyl group, a styryl group, (meth) And a group substituted with a radical polymerizable group such as an acryloyl group.
- the radical polymerizable group is preferably a (meth) acryloyl group, and the alkyl group preferably has 1 to 6 carbon atoms.
- R 2 represents hydrogen, an alkyl group having 1 to 20 carbon atoms, or a monovalent organic group having a radical polymerizable group.
- the monovalent organic group having a radical polymerizable group include those exemplified for R 1 .
- an alkyl group having 1 to 6 carbon atoms and an alkyl group having 1 to 6 carbon atoms in which at least a part of hydrogen is substituted with a (meth) acryloyl group are preferable.
- Examples of the phosphoric acid derivative compound having the structure represented by the general formula (1) include 2-methacryloyloxyethyl acid phosphate (trade name P-1M, manufactured by Kyoeisha Chemical Co., Ltd.), 2-acryloyloxy. Ethyl acid phosphate (trade name P-1A, manufactured by Kyoeisha Chemical Co., Ltd.), ethylene oxide-modified phosphoric acid dimethacrylate (trade name PM-21, manufactured by Nippon Kayaku Co., Ltd.), phosphoric acid-containing epoxy methacrylate (trade name “ Phosphoric acid (meth) acrylates such as “New Frontier” (registered trademark) S-23A, manufactured by Daiichi Kogyo Seiyaku Co., Ltd .; vinylphosphonic acid (trade names VPA-90, VPA-100, manufactured by BASF) Examples include vinyl phosphate compounds. Two or more of these may be used.
- Examples of amine compounds include primary amines, secondary amines, and tertiary amines. Two or more of these may be used. Among these, an amine compound having a structure represented by the following general formula (2) is preferable. Since the amine compound having the structure represented by the following general formula (2) has a hydroxyl group, when the photosensitive siloxane resin composition is cured by heat and / or light, the phosphoric acid derivative amine salt is (A ) Efficiently incorporated into the polysiloxane to suppress bleed out. Moreover, chemical resistance and adhesion with the MAM substrate can be further improved.
- R 3 represents a monovalent organic group having 1 to 20 carbon atoms and having a hydroxyl group.
- the monovalent organic group include an alkyl group, an acyl group, and an aryl group, and examples thereof include an alkyl group having 1 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms. preferable.
- an alkyl group having 1 to 6 carbon atoms in which at least a part of hydrogen is substituted with a hydroxyl group is preferable.
- R 4 and R 5 each independently represent hydrogen, an alkyl group having 1 to 10 carbon atoms, or a monovalent organic group having 1 to 20 carbon atoms having a hydroxyl group.
- the monovalent organic group having 1 to 20 carbon atoms having a hydroxyl group include those exemplified for R 3 .
- hydrogen, an alkyl group having 1 to 6 carbon atoms, and an alkyl group having 1 to 6 carbon atoms in which at least a part of hydrogen is substituted with a hydroxyl group are preferable.
- Examples of the amine compound having the structure represented by the general formula (2) include ethanolamine, diethanolamine, triethanolamine, propanolamine, methanolamine, dimethylethanolamine, diethylethanolamine, dibutylethanolamine, and N-methyl.
- Examples include alkanolamines. Two or more of these may be used.
- (D) Phosphoric acid derivative amine salt can be obtained by forming a salt by reaction of (d1) phosphoric acid derivative compound and (d2) amine compound.
- the weight ratio (d2 / d1) of the (d2) amine compound to the (d1) phosphoric acid derivative compound used for salt formation is 0.1 / 9. 9 or more is preferable and 0.3 / 9.7 or more is more preferable.
- (d2 / d1) is preferably 1/9 or less, and more preferably 0.5 / 9.5 or less.
- the photosensitive polysiloxane resin composition of the present invention only needs to contain (D) a phosphoric acid derivative amine salt, and the above-mentioned (A) polysiloxane, (B) photo radical polymerization initiator, (C) polyfunctional (D) A phosphoric acid derivative amine salt may be blended together with a monomer or the like, or (d1) a phosphoric acid derivative compound and (d2) an amine compound may be blended with these in the photosensitive polysiloxane composition. (D) A phosphoric acid derivative amine salt may be formed.
- the photosensitive polysiloxane resin composition of the present invention further contains a thermal radical generator.
- a thermal radical generator By containing a thermal radical generator, radicals are generated by heating and crosslinking of unsaturated double bonds is promoted, so that the hardness can be further improved.
- the thermal radical generator include 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) propionamine], 2,2′-azobis [2-methyl-N- (2-propenyl).
- the content of the (E) thermal radical generator in the photosensitive siloxane resin composition of the present invention is preferably 0.5% by weight or more in the solid content from the viewpoint of more effectively curing.
- the content of the (E) thermal radical generator is preferably 5% by weight or less in the solid content.
- the photosensitive siloxane resin composition of the present invention may further contain a curing agent, an ultraviolet absorber, a polymerization inhibitor, a solvent, a surfactant, a dissolution inhibitor, a stabilizer, an antifoaming agent, etc., if necessary. Good.
- a curing agent in the photosensitive siloxane resin composition of the present invention, curing can be promoted and hardness can be further improved.
- the curing agent include nitrogen-containing organic substances, silicone resin curing agents, various metal alcoholates, various metal chelate compounds, isocyanate compounds and polymers thereof, methylolated melamine derivatives, and methylolated urea derivatives. Two or more of these may be contained.
- metal chelate compounds, methylolated melamine derivatives, and methylolated urea derivatives are preferably used from the viewpoints of stability of the curing agent and processability of the coating film.
- the light resistance of the cured film can be improved and the resolution can be further improved.
- an ultraviolet absorber 2- (2H-benzotriazol-2-yl) phenol, 2- (2H-benzotriazol-2-yl) -4,6-tert is used from the viewpoint of suppressing coloring and improving transparency.
- the resolution can be further improved by including a polymerization inhibitor in the photosensitive siloxane resin composition of the present invention.
- a polymerization inhibitor examples include di-t-butylhydroxytoluene, butylhydroxyanisole, hydroquinone, 4-methoxyphenol, 1,4-benzoquinone, and t-butylcatechol.
- polymerization inhibitors include “IRGANOX” (registered trademark) 1010, “IRGANOX” 1035, “IRGANOX” 1076, “IRGANOX” 1098, “IRGANOX” 1135, “IRGANOX” 1330, “IRGANOX” 1726, “ IRGANOX “1425,” IRGANOX “1520,” IRGANOX “245,” IRGANOX “259,” IRGANOX "3114,” IRGANOX “565,” IRGANOX “295 (above, trade name, manufactured by BASF Japan Ltd.) . Two or more of these may be contained.
- the viscosity suitable for coating can be easily adjusted, and the uniformity of the coating film can be improved. It is preferable to combine a solvent whose boiling point under atmospheric pressure exceeds 150 ° C. and is 250 ° C. or less with a solvent that is 150 ° C. or less. By containing a solvent having a boiling point exceeding 150 ° C. and not more than 250 ° C., the solvent volatilizes appropriately at the time of coating, and drying of the coating proceeds, thereby suppressing coating unevenness and improving film thickness uniformity. Can do. Furthermore, by containing a solvent having a boiling point of 150 ° C.
- a solvent having a boiling point of 150 ° C. or less under atmospheric pressure is contained by 50% by weight or more of the whole solvent. Is preferred.
- Examples of the solvent having a boiling point of 150 ° C. or lower under atmospheric pressure include, for example, ethanol, isopropyl alcohol, 1-propyl alcohol, 1-butanol, 2-butanol, isopentyl alcohol, ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, ethylene glycol mono Ethyl ether, methoxymethyl acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monopropyl ether, ethylene glycol monomethyl ether acetate, 1-methoxypropyl-2-acetate, acetol, acetylacetone, methyl Isobutyl ketone, methyl ethyl ketone, methyl propyl ketone, methyl lactate Toluene, cyclopentanone, cyclohexane, normal heptane, benzene, methyl
- Examples of the solvent having a boiling point exceeding 150 ° C. and not higher than 250 ° C. include ethylene glycol diethyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol mono-tert-butyl ether, propylene glycol mono n-butyl ether, propylene Glycol mono t-butyl ether, 2-ethoxyethyl acetate, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 3-methoxy-3-methylbutyl acetate, 3-methoxybutyl acetate, 3-ethoxypropionic acid Ethyl, propylene glycol monomethyl ether propionate, dipropylene glycol methyl ether, diisobutyl ketone, diacetone alcohol, ethyl lactate, butyl lactate, dimethylformamide, dimethyl ester Ruasetoamido, .gamma.-butyrolactone, .
- the content of the solvent can be arbitrarily set according to the application method.
- the content is generally 50% by weight or more and 95% by weight or less in the photosensitive siloxane resin composition.
- the flowability during coating can be improved.
- the surfactant include “Megafac” (registered trademark) F142D, F172, F173, F183, F445, F470, F475, and F477 (above, trade names, manufactured by Dainippon Ink and Chemicals, Inc.), NBX- 15, Fluorosurfactants such as FTX-218 (trade name, manufactured by Neos Co., Ltd.); “BYK” (registered trademark) -333, “BYK” -301, “BYK” -331, “BYK” -345, “BYK” -307 (trade name, manufactured by Big Chemie Japan Co., Ltd.) and other silicone surfactants; polyalkylene oxide surfactants; poly (meth) acrylate surfactants and the like It is done. Two or more of these may be contained.
- the solid content concentration of the photosensitive siloxane resin composition of the present invention can be arbitrarily set according to the coating method and the like.
- the solid content concentration is generally 5% by weight or more and 50% by weight or less.
- the photosensitive siloxane resin composition of the present invention can be obtained by mixing the aforementioned components (A) to (D) and other components as necessary. More specifically, for example, (B) a radical photopolymerization initiator, (C) a polyfunctional monomer, (D) a phosphate ester amine salt and other additives as required are added to an arbitrary solvent and stirred. (A) Polysiloxane is added, and the mixture is further stirred for 20 minutes to 3 hours, and the resulting solution is filtered.
- the cured film of the present invention comprises a cured product of the above-described photosensitive polysiloxane resin composition of the present invention.
- the thickness of the cured film is preferably 0.1 to 15 ⁇ m.
- the transmittance of light having a wavelength of 400 nm when the thickness of the cured film is 1.5 ⁇ m is preferably 85% or more. The transmittance can be adjusted to a desired range by selecting the exposure amount and the thermosetting temperature in the cured film production method described later.
- the cured film of the present invention includes a protective film for a touch panel, various hard coating materials, a flattening film for TFT, an overcoat for a color filter, an antireflection film, a passivation film, and other protective films, an optical filter, an insulating film for a touch panel, a TFT It can be suitably used for insulating films for color, photo spacers for color filters, and the like. Among these, since it has high chemical resistance and substrate adhesion, it can be suitably used as an insulating film for touch panels.
- the cured film of the present invention can be obtained, for example, by applying the above-mentioned photosensitive polysiloxane resin composition of the present invention in a film shape, patterning it if necessary, and then curing it. It is preferable that the photosensitive siloxane resin composition of the present invention is applied on a substrate and pre-baked, and then a negative pattern is formed by exposure and development, followed by heat curing.
- Examples of the application method for applying the photosensitive siloxane resin composition on the substrate include microgravure coating, spin coating, dip coating, curtain flow coating, roll coating, spray coating, and slit coating.
- Examples of the pre-bake device include a heating device such as a hot plate and an oven.
- the prebake temperature is preferably 50 to 130 ° C.
- the prebake time is preferably 30 seconds to 30 minutes.
- the film thickness after pre-baking is preferably 0.1 to 15 ⁇ m.
- the exposure may be performed through a desired mask or may be performed without using a mask.
- Examples of the exposure machine include a stepper, a mirror projection mask aligner (MPA), and a parallel light mask aligner (PLA).
- Exposure intensity is 10 ⁇ 4000J / m 2 approximately (wavelength 365nm exposure equivalent) are preferred.
- Examples of the exposure light source include ultraviolet rays such as i-line, g-line, and h-line, KrF (wavelength 248 nm) laser, ArF (wavelength 193 nm) laser, and the like.
- Developing methods include methods such as shower, dipping and paddle.
- the immersion time in the developer is preferably 5 seconds to 10 minutes.
- the developer include inorganic alkalis such as alkali metal hydroxides, carbonates, phosphates, silicates and borates, amines such as 2-diethylaminoethanol, monoethanolamine, and diethanolamine, tetramethyl
- alkaline developers such as aqueous solutions containing quaternary ammonium salts such as ammonium hydroxide and choline. After development, it is preferable to rinse with water, followed by drying and baking in the range of 50 to 130 ° C.
- thermosetting temperature is preferably 80 to 150 ° C.
- thermosetting time is preferably about 15 minutes to 1 hour.
- the laminate of the present invention has the above-described cured film of the present invention on a substrate.
- the base material examples include glass substrates such as soda lime glass and alkali-free glass, transparent base materials made of plastics such as polyethylene terephthalate, polybutylene terephthalate, polyethersulfone, polycarbonate, and polyimide, and electrodes or metals on them.
- glass substrates such as soda lime glass and alkali-free glass
- transparent base materials made of plastics such as polyethylene terephthalate, polybutylene terephthalate, polyethersulfone, polycarbonate, and polyimide, and electrodes or metals on them.
- Examples include a substrate having wiring.
- examples of the material for forming the electrode or metal wiring include metal oxides such as indium, tin, zinc, aluminum, and gallium; molybdenum, silver, copper, aluminum, chromium, titanium Metal such as CNT (Carbon Nano Tube).
- the metal oxide include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium gallium zinc oxide (IGZO), and zinc oxide (ZnO).
- ITO indium tin oxide
- IZO indium zinc oxide
- AZO aluminum zinc oxide
- IGZO indium gallium zinc oxide
- ZnO zinc oxide
- a base material having a metal wiring containing molybdenum is preferable.
- the laminate of the present invention can be obtained, for example, by a production method including the steps of applying the above-described photosensitive polysiloxane resin composition of the present invention on a substrate and heating the coating film at 80 to 150 ° C. in this order. Can do.
- coating the photosensitive polysiloxane resin composition on a base material the method illustrated as a manufacturing method of a cured film, etc. are mentioned.
- Examples of the method for heating the coating film at 80 to 150 ° C. include the methods exemplified as the method for producing a cured film. By setting the heating temperature to 80 ° C. or higher, the reaction can proceed sufficiently, and the hardness, chemical resistance, and substrate adhesion can be further improved.
- the heating temperature to 150 ° C. or lower, it is possible to suppress excessive reaction and accompanying stress and further improve the substrate adhesion. Since the photosensitive siloxane resin composition of the present invention can be cured at a low temperature, it can be sufficiently cured at a temperature of 150 ° C. or lower.
- the touch panel member of the present invention has the above-mentioned laminated body and a display panel. Furthermore, the cured film in the laminate is preferably an interlayer insulating film.
- the solid content concentrations of the polysiloxane solutions in Synthesis Examples 1 to 6 and the acrylic resin solution in Synthesis Example 7 were determined by the following method. In an aluminum cup, 1.5 g of the polysiloxane solution or acrylic resin solution was weighed and heated at 250 ° C. for 30 minutes using a hot plate to evaporate the liquid. The weight of the solid content remaining in the heated aluminum cup was weighed, and the solid content concentration of the polysiloxane solution or the acrylic resin solution was determined from the ratio to the weight before the heating.
- the content ratio of each organosilane unit in the polysiloxane in Synthesis Examples 1 to 6 was determined by the following method.
- the polysiloxane solution is injected into an NMR sample tube made of “Teflon” (registered trademark) having a diameter of 10 mm, and 29 Si-NMR measurement is performed.
- the polysiloxane solution is derived from a specific organosilane unit relative to the integral value of the entire Si derived from organosilane.
- the content ratio of each organosilane unit was calculated from the ratio of the integrated value of Si.
- the 29 Si-NMR measurement conditions are shown below.
- Apparatus Nuclear magnetic resonance apparatus (JNM-GX270; manufactured by JEOL Ltd.) Measurement method: Gated decoupling method Measurement nuclear frequency: 53.6669 MHz ( 29 Si nucleus) Spectrum width: 20000Hz Pulse width: 12 ⁇ s (45 ° pulse) Pulse repetition time: 30.0 seconds Solvent: Acetone-d6 Reference substance: Tetramethylsilane Measurement temperature: 23 ° C Sample rotation speed: 0.0 Hz.
- Nitrogen was allowed to flow at 0.05 liter / min during the temperature rise and heating and stirring. During the reaction, a total of 36.90 g of methanol and water as by-products were distilled out. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-1) solution.
- the molar ratio of the repeating unit having a styryl group, the repeating unit having an acryloyl group, and the repeating unit having a hydrophilic group in the polysiloxane (A-1) was 65 mol%, 20 mol%, and 15 mol%, respectively.
- the weight average molecular weight of the polysiloxane (A-1) was 4,000.
- a polysiloxane solution was obtained by the same procedure as in Synthesis Example 1 except that a phosphoric acid aqueous solution in which 0.317 g of phosphoric acid (0.50% by weight with respect to the charged monomer) was dissolved was added over 30 minutes. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-2) solution.
- the molar ratio of the repeating unit having an acryloyl group and the repeating unit having a hydrophilic group in the polysiloxane (A-2) was 35 mol% and 15 mol%, respectively.
- the weight average molecular weight of the polysiloxane (A-2) was 2,500.
- a polysiloxane solution was obtained by the same procedure as in Synthesis Example 1 except that phosphoric acid in which 0.279 g of phosphoric acid (0.50 wt% with respect to the charged monomer) was dissolved in 74 g was added. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-3) solution.
- the molar ratio of the repeating unit having a styryl group, the repeating unit having an acryloyl group, and the repeating unit having a hydrophilic group in the polysiloxane (A-3) was 20 mol%, 20 mol%, and 10 mol%, respectively.
- the weight average molecular weight of the polysiloxane (A-3) was 3,500.
- a polysiloxane solution was obtained by the same procedure as in Synthesis Example 1 except that phosphoric acid in which .50 wt% was dissolved was added. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-4) solution.
- the molar ratio of the repeating unit having a styryl group, the repeating unit having an acryloyl group, and the repeating unit having a hydrophilic group in the polysiloxane (A-4) was 80 mol%, 10 mol%, and 10 mol%, respectively.
- the weight average molecular weight of the polysiloxane (A-4) was 4,000.
- Synthesis Example 5 Synthesis of polysiloxane (A-5) solution 7.87 g (0.03 mol) of 3-trimethoxysilylpropyl succinic anhydride, 20.43 g (0.15 mol) of methyltrimethoxysilane, phenyltrimethoxy 17.85 g (0.09 mol) of silane, 7.09 g (0.03 mol) of 3-glycidoxypropyltrimethoxysilane, and 49.61 g of PGME were charged, and phosphoric acid was added to 16.74 g of water while stirring at room temperature.
- a polysiloxane solution was obtained by the same procedure as in Synthesis Example 1 except that phosphoric acid in which 0.266 g (0.50% by weight with respect to the charged monomer) was dissolved was added. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-5) solution.
- the molar ratio of the repeating unit having a hydrophilic group in the polysiloxane (A-5) was 10 mol%.
- the weight average molecular weight of the polysiloxane (A-5) was 3,000.
- Synthesis Example 6 Synthesis of Polysiloxane (A-6) Solution 13.46 g (0.06 mol) of p-styryltrimethoxysilane, 14.06 g (0.06 mol) of ⁇ -acryloylpropyltrimethoxysilane, methyltrimethoxysilane 12.26 g (0.09 mol), tetratrimethoxysilane 13.68 g (0.09 mol), TBC 0.0826 g and PGME 51.56 g were charged, and phosphoric acid was added to 17.82 g of water while stirring at room temperature.
- a polysiloxane solution was obtained by the same procedure as in Synthesis Example 1 except that phosphoric acid in which 0.267 g (0.50% by weight with respect to the charged monomer) was dissolved was added. PGME was added to the obtained polysiloxane solution so that the solid concentration was 40% by weight to obtain a polysiloxane (A-6) solution.
- the molar ratio of the repeating unit having a styryl group and the repeating unit having an acryloyl group in the polysiloxane (A-6) was 20 mol% and 20 mol%, respectively.
- the weight average molecular weight of the polysiloxane (A-6) was 5,000.
- Synthesis Example 7 Synthesis of Acrylic Resin (a) Solution A 500 ml three-necked flask was charged with 3 g of 2,2′-azobis (isobutyronitrile) and 50 g of PGME. Thereafter, 30 g of methacrylic acid, 35 g of benzyl methacrylate, and 35 g of tricyclo [5.2.1.0 2,6 ] decan-8-yl methacrylate were charged and stirred for a while at room temperature. The mixture was stirred at 5 ° C. for 5 hours.
- the prepared film is 100 ⁇ m, 50 ⁇ m, 40 ⁇ m, 30 ⁇ m, 20 ⁇ m, 15 ⁇ m, 10 ⁇ m in width. It exposed with the gap of 100 micrometers through the gray scale mask which has a line & space pattern. Thereafter, using an automatic developing device (“AD-2000 (trade name)” manufactured by Takizawa Sangyo Co., Ltd.), the film was shower-developed with 0.045 wt% potassium hydroxide aqueous solution for 60 seconds and then rinsed with water for 30 seconds.
- AD-2000 automatic developing device
- the exposure amount for forming a line and space pattern having a width of 100 ⁇ m in a one-to-one width was taken as the optimum exposure amount, and the minimum pattern size after development at the optimum exposure amount was taken as the resolution.
- the developed pattern was observed visually and with a microscope whose magnification was adjusted to 50 to 100 times, and the development residue was evaluated according to the following criteria according to the degree of undissolved portion of the unexposed area. 5: A residue is not recognized visually, and a residue is also not recognized by the fine pattern below 50 micrometers in microscopic observation.
- the prepared film was exposed using a parallel light mask aligner (trade name PLA-501F, manufactured by Canon Inc.) using an ultra-high pressure mercury lamp as a light source, and using an oven (trade name IHPS-222, manufactured by ESPEC Corporation). Then, it was cured in air at 120 ° C. for 1 hour to produce a cured film having a thickness of 1.5 ⁇ m.
- 11 parallel vertical and horizontal lines are drawn at 1 mm intervals so as to reach the substrate of the glass plate with a cutter knife. 100 pieces were produced.
- Condition 1 50 ° C., 2 minutes Condition 2: 60 ° C., 2 minutes Condition 3: 70 ° C., 2 minutes Condition 4: 80 ° C., 2 minutes
- Chemical resistance based on conditions judged to have chemical resistance Was evaluated according to the following criteria, and one or more was regarded as acceptable. 4: Conditions 1, 2, 3, 4 all have chemical resistance 3: Conditions 1, 2, and 3 have chemical resistance 2: Conditions 1 and 2 have chemical resistance 1: Conditions 1 have chemical resistance only Yes: No chemical resistance under any conditions.
- Example 1 Under a yellow light, (B) as radical photopolymerization initiator, etanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyl) Oxime) (“Irgacure” (registered trademark) OXE-02 (trade name), manufactured by BASF Japan Ltd.) 0.080 g and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (“Irgacure” ( Registered trademark) -819 (trade name), manufactured by BASF Japan Ltd.) 0.160 g, ethylenebis (oxyethylene) bis [3- (5-tert-butyl-4-hydroxy-m-tolyl) propionate] (“ Irganox ”(registered trademark) -245 (trade name), BASF Japan Ltd.) PGME 10% by weight solution 0.120 g, tetrakis (acetyl) 3.998 g of
- Example 2 A photosensitive siloxane resin composition (P-2) was obtained in the same manner as in Example 1 except that 6.167 g of the polysiloxane (A-2) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 using the obtained photosensitive siloxane resin composition (P-2).
- Example 3 A photosensitive siloxane resin composition (P-3) was obtained in the same manner as in Example 1 except that 6.167 g of the polysiloxane (A-3) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-3).
- Example 4 A photosensitive siloxane resin composition (P-4) was obtained in the same manner as in Example 1 except that 6.167 g of the polysiloxane (A-4) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 using the obtained photosensitive siloxane resin composition (P-4).
- Example 5 A photosensitive siloxane resin composition (P-5) was obtained in the same manner as in Example 1 except that 6.167 g of the polysiloxane (A-5) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-5).
- Example 6 A photosensitive siloxane resin composition (P-6) was obtained in the same manner as in Example 1 except that 6.167 g of the polysiloxane (A-6) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-6).
- Example 7 The same procedure as in Example 1 was conducted except that 2-acryloyloxyethyl acid phosphate (P-1A (trade name), manufactured by Kyoeisha Chemical Co., Ltd.) was used instead of the phosphoric acid derivative compound (d1) P-1M. A photosensitive siloxane resin composition (P-7) was obtained. The obtained photosensitive siloxane resin composition (P-7) was used for evaluation in the same manner as in Example 1.
- P-1A 2-acryloyloxyethyl acid phosphate
- d1 P-1M phosphoric acid derivative compound
- Example 8 Amine compound (d2) A photosensitive siloxane resin composition (P-8) was obtained in the same manner as in Example 1 except that triethanolamine was used instead of monoethanolamine. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-8).
- Example 9 The same procedure as in Example 1 was carried out except that ethyl acid phosphate (JP502 (trade name), manufactured by Johoku Chemical Industry Co., Ltd.) was used instead of the phosphoric acid derivative compound (d1) P-1M. A product (P-9) was obtained. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-9).
- JP502 trade name
- Example 10 Amine compound (d2) A photosensitive siloxane resin composition (P-10) was obtained in the same manner as in Example 1 except that triethylamine was used instead of monoethanolamine. Evaluation was performed in the same manner as in Example 1 using the obtained photosensitive siloxane resin composition (P-10).
- a photosensitive siloxane resin composition (P-13) was obtained in the same manner as in Example 1 except that 3.999 g of the solution was used. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-13).
- a photosensitive siloxane resin composition (P-14) was obtained in the same manner as in Example 1 except that was used. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-14).
- Example 15 The amount of the polysiloxane (A-1) solution was 5.967 g, (E) 0.080 g of dimethyl 2,2′-azobis (isobutyrate) was added as a thermal radical generator, and the mixed solvent was PGME 1.797 g and PGMEA 3
- a photosensitive siloxane resin composition (P-15) was obtained in the same manner as in Example 1 except that the amount was 200 g. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-15).
- Example 16 A photosensitive siloxane resin composition (P-16) was obtained in the same manner as in Example 15 except that the polysiloxane (A-2) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-16).
- Example 17 A photosensitive siloxane resin composition (P-17) was obtained in the same manner as in Example 15 except that the polysiloxane (A-5) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-17).
- Example 18 A photosensitive siloxane resin composition (P-18) was obtained in the same manner as in Example 15 except that the polysiloxane (A-6) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-18).
- Example 19 The amount of the polysiloxane (A-1) solution is 5.967 g, (E) 0.080 g of dimethyl 2,2′-azobis (isobutyrate) is added as a thermal radical generator, and the mixed solvent is PGME 1.797 g and PGMEA3.
- a photosensitive siloxane resin composition (P-19) was obtained in the same manner as in Example 9 except for 200 g. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-19).
- Example 20 The amount of the polysiloxane (A-1) solution was 5.967 g, (E) 0.080 g of dimethyl 2,2′-azobis (isobutyrate) was added as a thermal radical generator, and the mixed solvent was PGME 1.797 g and PGMEA 3
- a photosensitive siloxane resin composition (P-20) was obtained in the same manner as in Example 10 except that the amount was 200 g. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-20).
- Example 1 except that the amount of the polysiloxane (A-1) solution was 8.166 g, (D) the phosphate ester amine salt was not added, and the mixed solvent was PGME 3.676 g and PGMEA 3.200 g. And a photosensitive siloxane resin composition (P-21) was obtained. Evaluation was performed in the same manner as in Example 1 by using the obtained photosensitive siloxane resin composition (P-21).
- Comparative Example 2 A photosensitive siloxane resin was prepared in the same manner as in Example 1 except that the phosphate ester amine salt was not added and the amount of the phosphoric acid derivative compound (d1) P-1M in 20% by weight of PGME was changed to 3.999 g. A composition (P-22) was obtained. The obtained photosensitive siloxane resin composition (P-22) was used for evaluation in the same manner as in Example 1. Comparative Example 3 A photosensitive siloxane resin composition (P-23) was obtained in the same manner as in Example 1 except that tetraethylammonium, which is a quaternary ammonium cation, was used as the amine compound (d2) instead of monoethanolamine. Evaluation was performed in the same manner as in Example 1 using the obtained photosensitive siloxane resin composition (P-23).
- Comparative Example 4 A photosensitive acrylic resin composition (P-24) was obtained in the same manner as in Example 1 except that 6.167 g of the acrylic resin (a) solution was used instead of the polysiloxane (A-1) solution. Evaluation was performed in the same manner as in Example 1 using the obtained photosensitive acrylic resin composition (P-24).
- Tables 2 to 4 show the compositions of Examples 1 to 20 and Comparative Examples 1 to 4, and Table 5 shows the evaluation results.
- Cured films obtained by curing the photosensitive siloxane resin composition of the present invention include various hard coat films such as touch panel protective films, insulating films for touch sensors, flattened films for TFTs of liquid crystals and organic EL displays, It is suitably used for metal wiring protective films, insulating films, antireflection films, optical filters, color filter overcoats, pillar materials, and the like.
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JP2016153834A (ja) * | 2015-02-20 | 2016-08-25 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、タッチパネル、タッチパネル表示装置、液晶表示装置、及び、有機el表示装置 |
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TW200728908A (en) * | 2006-01-25 | 2007-08-01 | Kaneka Corp | Photosensitive dry film resist, printed wiring board using same, and method for producing printed wiring board |
EP2236543B1 (en) * | 2007-12-10 | 2014-02-26 | Kaneka Corporation | Polysiloxane compound, alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
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JP2007136870A (ja) * | 2005-11-18 | 2007-06-07 | Eastman Kodak Co | 画像形成要素および画像形成方法 |
JP2011203577A (ja) * | 2010-03-26 | 2011-10-13 | Sanyo Chem Ind Ltd | 感光性樹脂組成物 |
JP2016153834A (ja) * | 2015-02-20 | 2016-08-25 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、タッチパネル、タッチパネル表示装置、液晶表示装置、及び、有機el表示装置 |
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JPWO2018168435A1 (ja) | 2019-03-28 |
TWI765978B (zh) | 2022-06-01 |
TW201837609A (zh) | 2018-10-16 |
JP6458902B1 (ja) | 2019-01-30 |
CN110419000B (zh) | 2023-07-28 |
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