WO2018153036A1 - 显示屏及其制造方法和显示装置 - Google Patents

显示屏及其制造方法和显示装置 Download PDF

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Publication number
WO2018153036A1
WO2018153036A1 PCT/CN2017/097092 CN2017097092W WO2018153036A1 WO 2018153036 A1 WO2018153036 A1 WO 2018153036A1 CN 2017097092 W CN2017097092 W CN 2017097092W WO 2018153036 A1 WO2018153036 A1 WO 2018153036A1
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Prior art keywords
metal layer
light absorbing
absorbing material
substrate
layer
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PCT/CN2017/097092
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English (en)
French (fr)
Inventor
刘广辉
王东方
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京东方科技集团股份有限公司
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Priority to EP17837840.2A priority Critical patent/EP3588565B1/en
Priority to US15/751,706 priority patent/US10665822B2/en
Publication of WO2018153036A1 publication Critical patent/WO2018153036A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present disclosure relates to a display screen and display device.
  • OLED Organic Light-Emitting Diode
  • An embodiment of the present disclosure provides a display screen including a substrate substrate; a thin film transistor on the substrate substrate, wherein the thin film transistor includes a metal layer; and at least one of a light absorbing material layer and a scattering structure, perpendicular to The direction of the base substrate is between the base substrate and the metal layer.
  • the light absorbing material layer has a greater ability to absorb light than the metal layer absorbs light.
  • the at least one of the layer of light absorbing material and the scattering structure is in direct contact with the metal layer.
  • the light absorbing material layer and the scattering structure are disposed separately, and in a direction perpendicular to the substrate substrate, the scattering structure is located between the metal layer and the light absorbing material layer.
  • a portion of the surface of the base substrate facing the thin film transistor serves as the scattering structure.
  • At least a portion of the surface of the metal layer facing the substrate substrate acts as the scattering structure.
  • the layer of light absorbing material is in direct contact with the scattering structure.
  • an orthographic projection of the metal layer on the substrate substrate is within an orthographic projection of the at least one of the light absorbing material layer and the scattering structure on the substrate substrate.
  • the metal layer includes at least one of a gate metal layer, a source metal layer, and a drain metal layer.
  • Another embodiment of the present disclosure provides a display device including the display screen of any of the above.
  • a further embodiment of the present disclosure provides a method of manufacturing a display panel, including: providing a substrate; forming the thin film transistor on the substrate, wherein the thin film transistor includes a metal layer; and providing a light absorbing material layer And at least one of the scattering structures is located between the metal layer and the substrate in a direction perpendicular to the substrate.
  • the at least one of the layer of light absorbing material and the scattering structure is in direct contact with the metal layer.
  • the light absorbing material layer and the scattering structure are disposed separately, and in a direction perpendicular to the substrate substrate, the scattering structure is located between the metal layer and the light absorbing material layer.
  • providing at least one of the light absorbing material layer and the scattering structure between the base substrate and the metal layer includes: treating a portion of the surface of the base substrate facing the thin film transistor as The scattering structure.
  • the disposing at least one of the light absorbing material layer and the scattering structure between the base substrate and the metal layer includes: at least a portion of a surface of the metal layer facing the substrate substrate Processed as the scattering structure.
  • the layer of light absorbing material is in direct contact with the scattering structure.
  • an orthographic projection of the metal layer on the substrate substrate is within an orthographic projection of the at least one of the light absorbing material layer and the scattering structure on the substrate substrate.
  • the metal layer includes at least one of a gate metal layer, a source metal layer, and a drain metal layer.
  • FIG. 1 is a schematic cross-sectional structural view of a display screen
  • FIG. 2 is a schematic cross-sectional structural view of a display screen according to an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional structural view of a display screen according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic plan view showing a partial structure of a display screen according to an embodiment of the present disclosure
  • FIG. 5 is a block diagram of a display device according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a method of manufacturing a display screen according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural view of a display screen.
  • the array substrate of the display screen comprises: a substrate substrate 90, a gate metal layer 91, a gate insulating layer 92, a source 93, a drain 94, a passivation layer 95, an etch stop layer 96, and The source layer 97, the electroluminescent device 98, wherein the electroluminescent device 98 can include an anode 981, a light emitting layer EL, and a cathode 982.
  • the light emitted by the EL is emitted from the side of the array substrate (see the open arrow in Figure 1).
  • the ambient light L1 is reflected in the metal layer 91 to generate unfavorable reflected light L2, which affects the viewer's viewing of the display screen.
  • the metal layer reflection on the side of the array substrate can be eliminated by attaching a polarizer having a quarter-displacement circularly polarized light.
  • a polarizer having a quarter-displacement circularly polarized light has high requirements on raw materials and attachment processes, and fluctuations in raw materials and processes may affect the yield and performance of the OLED; in addition, the polarizer has a problem of high cost, which is disadvantageous to Application promotion.
  • the array substrate includes a base substrate 10, a gate metal layer 11, a gate insulating layer 12, a source electrode 13, a drain electrode 14, a passivation layer 15, and an active layer 16.
  • the array substrate further includes a light absorbing material layer 17 between the base substrate 10 and the gate metal layer 11.
  • the ability of the light absorbing material layer 17 to absorb light is greater than the ability of the gate metal layer 11 to absorb light.
  • the ambient light L1 incident on the metal layer 11 can be absorbed by the light absorbing material layer 17, without the need of an additional polarizer, which avoids the problems caused by the raw material of the polarizer and the attaching process.
  • the light absorbing material layer 17 may be a black light absorbing material.
  • the light absorbing material layer 17 is disposed to overlap the gate metal layer 11.
  • the orthographic projection of the gate metal layer 11 on the upper surface of the base substrate 10 is located within the orthographic projection of the light absorbing material layer 17 on the upper surface of the base substrate 10.
  • the light absorbing material layer 17 is in direct contact with the gate metal layer 11.
  • the light absorbing material layer 17 is in direct contact with the base substrate 10.
  • the reflectance of the side of the light absorbing material layer 17 facing the base substrate 10 is smaller than the reflectance of the surface of the gate metal layer 11 facing the base substrate 10.
  • black light absorbing material is only an alternative embodiment of the present disclosure, and the present disclosure may employ other light absorbing materials, for example, other color light absorbing materials.
  • the light absorbing material layer 17 is spaced apart from the gate metal layer 11.
  • the thin film transistor TFT has a top gate structure.
  • the display also includes a scattering structure 20.
  • the light absorbing material layer 17 and the scattering structure 20 are, for example, located between the base substrate 10 and the gate metal layer 11' in a direction perpendicular to the base substrate 10.
  • Interlayer insulating layers IN1 and IN2 are further disposed between the light absorbing material layer 17 and the gate metal layer 11.
  • the scattering structure 20 is provided, for example, at the interface of the interlayer insulating layers IN1 and IN2, and is configured such that light incident thereon is diffusely reflected.
  • the scattering structure 20 is obtained by treating the upper surface of the interlayer insulating layer IN2 into a rough surface.
  • the first portion is absorbed, and at the same time, the second portion of the light L1' is transmitted from the light absorbing material layer 17, and the second portion of the light L1' is scattered by the scattering structure and incident on the light absorbing material.
  • the material layer 17 is thus again absorbed by it.
  • the source layer 13 and the drain layer 14 are also, for example, metal layers, respectively.
  • the layer of light absorbing material 17 allows absorption of the reflection of these metal layers, which reduces or eliminates the adverse reflection of these metal layers.
  • a portion of the surface of the base substrate 20 facing the thin film transistor S1 serves as the scattering structure 20.
  • At least a portion of the surface of the gate metal layer 11 or 11' facing the substrate substrate 10 serves as the scattering structure 20.
  • the scattering structure 20 is directly formed on the surface of the light absorbing material layer 17 facing the substrate 10; and/or the scattering structure 20 is directly formed on the surface of the light absorbing material layer 17 facing the gate metal layer 11, the source layer 13. And on the surface of the drain layer 14.
  • the scattering structure 20 and the light absorbing material layer 17 are in direct contact.
  • the orthographic projection of the gate metal layer 11, the source layer 13, and the drain layer 14 on the substrate substrate 10 is located on the substrate absorbing material layer 17 and the scattering structure 20 on the substrate.
  • the orthographic projections of the light absorbing material layer 17 and the scattering structure 20 on the base substrate 10 coincide with each other.
  • the orthographic projections of the gate metal layer 11 and the light absorbing material layer 17 on the base substrate 10 coincide with each other.
  • the light absorbing material layer 17 is composed of, for example, one of the following materials: silicon carbide, black zirconia, black organic material.
  • the silicon carbide, black zirconia, black organic material, and the like exemplified in the present disclosure are merely alternative embodiments of the present disclosure; wherein the black organic material may be any black material capable of absorbing light.
  • the display screen in the above embodiment includes both the scattering structure 20 and the light absorbing material layer 17.
  • the display screen provided in further embodiments may include only the scattering structure 20 and not the light absorbing material layer 17. Due to the presence of the scattering structure, the problem of unfavorable reflection caused by the metal layer in the array substrate can be reduced or eliminated.
  • the display screen of the embodiment of the disclosure is: a liquid crystal display or an organic light emitting diode (OLED) display;
  • OLED organic light emitting diode
  • the display screen of the embodiment of the disclosure is an OLED display screen
  • the array substrate also includes an electroluminescent device 18.
  • the hollow arrows in Figure 2 show the light exit direction of the display. It can be seen from Fig. 2 that the light absorbing material layer 17 is located in the light outgoing direction of the display screen. Downstream of the gate metal layer 11.
  • an etch stop layer 19 is further disposed between the passivation layer and the active layer of the display screen of the present disclosure
  • the display is an OLED display
  • a color filter layer G is disposed between the electroluminescent device 18 and the passivation layer 15.
  • the electroluminescent device 18 of the present disclosure may include a cathode 181, a light emitting layer 182, and an anode 183; in addition, a color film layer G may be disposed between the anode 183 and the passivation layer 15.
  • the light absorbing material layer of the present disclosure is overlaid on the gate metal layer in one of the following ways:
  • sputtering, chemical vapor deposition, spin coating, and linear coating are only optional modes of the present disclosure, and the present disclosure may also adopt other methods to dispose the light absorbing material between the substrate substrate and the gate metal layer, for example, for example. , vacuum evaporation, printing, etc., can be determined according to the properties of the light absorbing materials and process requirements.
  • the light absorbing material layer of the present disclosure may be disposed between the base substrate and the gate metal layer in such a manner as to completely cover the display side of the gate metal layer.
  • the array substrate of the display panel includes: a substrate substrate, a gate metal layer, a gate insulating layer, a source, a drain, a passivation layer, and an active layer, and the array substrate further includes: a gate electrode A layer of light absorbing material of the metal layer.
  • the present disclosure uses a light absorbing material for the reflective absorption of the metal layer, which is difficult to process, and can select a corresponding material according to cost, which is beneficial to the production of the product.
  • the present disclosure can also provide a method for fabricating the above display screen based on the structure of the above display screen, and only need to refer to the process sequence of the related art to provide a light absorbing material layer between the base substrate and the gate metal layer.
  • the orthographic projection of the gate metal layer 11 on the upper surface of the base substrate 10 is located at the orthographic projection of the light absorbing material layer 17 on the upper surface of the base substrate 10 to completely coincide.
  • the present disclosure also provides a display device 200.
  • the display screen 100 of the display device 200 includes a substrate substrate, a gate metal layer, a gate insulating layer, a source, a drain, a passivation layer, and
  • the array substrate composed of the source layer further includes:
  • a light absorbing material layer is disposed between the base substrate and the gate metal layer.
  • the present disclosure can absorb the reflection of the metal layer by the light absorbing material layer, without the need of an additional polarizer, and avoids the problems caused by the raw material of the polarizer and the attaching process.
  • the layer of light absorbing material of the present disclosure completely covers the display side of the gate metal layer.
  • the display screen of the embodiment of the present disclosure is:
  • LCD organic light emitting diode
  • the display screen of the embodiment of the disclosure is an OLED display
  • the array substrate further includes an electroluminescent device; the electroluminescent device of the present disclosure may include an anode, a cathode, and a light emitting layer between the anode and the cathode.
  • an etch stop layer is further disposed between the passivation layer and the active layer of the display screen of the present disclosure.
  • the display screen of the embodiment of the disclosure is an OLED display screen
  • the array substrate also includes an electroluminescent device.
  • the display screen of the embodiment of the disclosure is an OLED display screen
  • a color film layer is disposed between the electroluminescent device and the passivation layer.
  • the layer of light absorbing material of the present disclosure is composed of a black light absorbing material.
  • the black light absorbing material is only an exemplary embodiment of the present disclosure, and the present disclosure may employ other light absorbing materials, for example, other color light absorbing materials.
  • the light absorbing material for example, can absorb the reflection of the metal layer and does not cause reflection of the metal layer after absorption.
  • the layer of light absorbing material of the present disclosure is composed of one of the following materials: silicon carbide, black zirconia, black organic material.
  • the silicon carbide, black zirconia, black organic material, and the like exemplified in the present disclosure are merely alternative embodiments of the present disclosure; wherein the black organic material may be any black material having light absorbing light.
  • the light absorbing material layer of the present disclosure is overlaid on the gate metal layer in one of the following ways:
  • sputtering chemical vapor deposition, spin coating, and linear coating are only alternative embodiments of the present disclosure, and the present disclosure may also provide the light absorbing material between the base substrate and the gate metal layer by other means.
  • vacuum evaporation, printing, etc. can be determined according to the properties of the light absorbing material and the process requirements.
  • the array substrate of the display panel includes: a substrate substrate, a gate metal layer, a gate insulating layer, a source, a drain, a passivation layer, and an active layer, and the array substrate further includes: a gate electrode A layer of light absorbing material of the metal layer.
  • the present disclosure reduces the process difficulty of processing the reflective problem of the array substrate by the light absorbing material layer disposed on the gate metal layer.
  • the present disclosure uses a light absorbing material for the reflective absorption of the metal layer, which is difficult to process, and can select a corresponding material according to cost, which is beneficial to the production of the product.
  • Another embodiment of the present disclosure provides a method for manufacturing a display screen. Referring to FIG. 6, the method includes:
  • the thin film transistor comprises a metal layer
  • At least one of the light absorbing material layer and the scattering structure is disposed between the metal layer and the base substrate in a direction perpendicular to the base substrate.
  • the at least one of the layer of light absorbing material and the scattering structure is in direct contact with the metal layer.
  • the portion has a rugged structure by roughening a portion of the surface of the base substrate for forming the TFT, thereby serving as a scattering structure.
  • At least a portion of the surface of the gate metal layer facing the substrate substrate is roughened to have an uneven structure as a scattering structure.
  • the at least a portion has an uneven structure by roughening at least a portion of a surface of the light absorbing material layer facing the substrate substrate and/or at least a portion of a surface facing the metal layer And thus as a scattering structure.
  • the layer of light absorbing material is in direct contact with the scattering structure.
  • an orthographic projection of the metal layer on the substrate substrate is within an orthographic projection of the at least one of the light absorbing material layer and the scattering structure on the substrate substrate.
  • the metal layer includes at least one of a gate metal layer, a source metal layer, and a drain metal layer.

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Abstract

一种显示屏及其制造方法和显示装置。显示屏包括：衬底基板(10)；位于衬底基板上的薄膜晶体管(TFT)，其中，薄膜晶体管包括金属层(11'，13，14)；吸光材料层(17)和散射结构(20)的至少之一，在垂直于衬底基板的方向上位于衬底基板和金属层之间。这样，可以以低成本解决显示屏的不利反光的问题。

Description

显示屏及其制造方法和显示装置
本申请要求于2017年2月22日递交的中国专利申请第201720161418.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及一种显示屏和显示装置。
背景技术
有机发光二极管(OLED，Organic Light-Emitting Diode)产品是未来显示发展的趋势，其高色域、高对比度等优点吸引了众多机构和厂家进行开发、生产。主流的OLED结构根据发光层(EL)光线射出方向分为底发射方式和顶发射方式两种。
发明内容
本公开的实施例提供一种显示屏，包括衬底基板；位于衬底基板上的薄膜晶体管，其中，所述薄膜晶体管包括金属层；以及吸光材料层和散射结构的至少之一，在垂直于所述衬底基板的方向上位于所述衬底基板与所述金属层之间。
在一个示例中，所述吸光材料层对光线的吸收能力大于所述金属层对光线的吸收能力。
在一个示例中，所述吸光材料层和所述散射结构的所述至少之一与所述金属层直接接触。
在一个示例中，所述吸光材料层和所述散射结构分离设置，且在垂直于所述衬底基板的方向上，所述散射结构位于所述金属层与所述吸光材料层之间。
在一个示例中，所述衬底基板的面向所述薄膜晶体管的表面的一部分作为所述散射结构。
在一个示例中，所述金属层的面向所述衬底基板的表面的至少一部分作为所述散射结构。
在一个示例中，所述吸光材料层和所述散射结构直接接触。
在一个示例中，所述金属层在所述衬底基板上的正投影位于所述吸光材料层和所述散射结构的所述至少之一在所述衬底基板上的正投影之内。
在一个示例中，所述金属层包括栅极金属层、源极金属层和漏极金属层中的至少之一。
本公开另一实施例提供一种显示装置，包括以上任一项的显示屏。
本公开又一实施例提供一种显示屏的制造方法，包括：提供衬底基板；在所述衬底基板上形成所述薄膜晶体管，其中，所述薄膜晶体管包括金属层；以及设置吸光材料层和所述散射结构的至少之一，在垂直于所述衬底基板的方向上，位于所述金属层与所述衬底基板之间。
在一个示例中，所述吸光材料层和所述散射结构的所述至少之一与所述金属层直接接触。
在一个示例中，所述吸光材料层和所述散射结构分离设置，且在垂直于所述衬底基板的方向上，所述散射结构位于所述金属层与所述吸光材料层之间。
在一个示例中，在所述衬底基板和所述金属层之间设置吸光材料层和散射结构的至少之一包括：将所述衬底基板的面向所述薄膜晶体管的表面的一部分处理为所述散射结构。
在一个示例中，所述在所述衬底基板和所述金属层之间设置吸光材料层和散射结构的至少之一包括：将所述金属层的面向所述衬底基板的表面的至少一部分处理为所述散射结构。
在一个示例中，所述吸光材料层和所述散射结构直接接触。
在一个示例中，所述金属层在所述衬底基板上的正投影位于所述吸光材料层和所述散射结构的所述至少之一在所述衬底基板上的正投影之内。
在一个示例中，所述金属层包括栅极金属层、源极金属层和漏极金属层中的至少之一。
这样，可以以低成本解决显示屏的阵列基板的不利反光的问题。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种显示屏的截面结构示意图；
图2为本公开实施例提供的显示屏的截面结构示意图；
图3为本公开实施例提供的显示屏的截面结构示意图；
图4为本公开实施例提供的显示屏的部分结构的平面示意图；
图5为本公开实施例提供的显示装置的框图；
图6为本公开实施例提供的显示屏的制造方法的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。需要说明的是，在不冲突的情况下，本申请中的实施例和实施例中的特征可以相互任意组合。
图1为一种显示屏的结构示意图。如图1所示，显示屏的阵列基板包括：衬底基板90、栅极金属层91、栅极绝缘层92、源极93、漏极94、钝化层95、刻蚀阻挡层96、有源层97、电致发光器件98，其中，电致发光器件98可以包括：阳极981、发光层EL和阴极982。对于底发射方式，EL发出的光线从阵列基板侧发出(参见图1中空心箭头所示)。观察者从阵列基板侧观察，由于阵列基板侧制备有金属层91，环境光L1在金属层91发生反射产生不利的反射光L2，这会影响观察者观看显示画面。
例如，可通过贴附一层具有1/4位移圆偏光的偏光片来消除阵列基板侧的金属层反光。然而，上述采用偏光片进行金属层反光处理的方法，对原材料和贴附工艺要求高，而原材料和工艺波动会影响OLED的良率及性能；另外，偏光片还存在造价昂贵的问题，不利于应用推广。
图2为本公开显示屏的部分结构示意图，如图2所示，显示屏(100)的 阵列基板包括：衬底基板10、栅极金属层11、栅极绝缘层12、源极13、漏极14、钝化层15、有源层16。
阵列基板还包括：在衬底基板10和栅极金属层11之间的吸光材料层17。
这里，吸光材料层17对于光线的吸收能力大于栅极金属层11对于光线的吸收能力。
本公开实施例中，通过吸光材料层17可以对入射到金属层11上的环境光L1进行吸收，无需额外的偏光片，避免了由偏光片的原材料和贴附工艺带来的问题。
可选的，本公开实施例中，吸光材料层17可以是黑色吸光材料。
例如，在垂直于衬底基板10的方向上，吸光材料层17与栅极金属层11重叠设置。例如，栅极金属层11在衬底基板10的上表面的正投影位于吸光材料层17在衬底基板10的上表面的正投影之内。
例如，吸光材料层17与栅极金属层11直接接触。例如，吸光材料层17与衬底基板10直接接触。
例如，吸光材料层17的面朝衬底基板10的一侧的反射率小于栅极金属层11的面朝衬底基板10一侧的反射率。
需要说明的是，黑色吸光材料只是本公开的一个可选实施例，本公开可以采用其他吸光材料，例如，其他颜色的吸光材料。
本公开另一实施例提供的显示屏中，参见图3，吸光材料层17与栅极金属层11间隔开设置。薄膜晶体管TFT具有顶栅结构。该显示屏还包括散射结构20。在垂直于衬底基板10的方向上，吸光材料层17和散射结构20例如位于衬底基板10和栅极金属层11’之间。在吸光材料层17与栅极金属层11之间还设置有层间绝缘层IN1和IN2。散射结构20例如提供在层间绝缘层IN1和IN2的界面处，且构造为使得入射到其上的光线发生漫反射。例如，散射结构20是通过将层间绝缘层IN2的上表面处理为凹凸不平的表面而得到。环境光L1入射到吸光材料层17上时被吸收了第一部分，同时从吸光材料层17透射出第二部分的光线L1’，该第二部分的光线L1’被散射结构散射而再入射到吸光材料层17从而再次被其吸收。
源极层13和漏极层14例如也分别为金属层。
另外，即使有一部分的环境光入射到栅极金属层11、源极层13和漏极 层14上，吸光材料层17可以实现对这些金属层的反光进行吸收，这样能够减少或消除这些金属层的不利反光。
在另一示例中，衬底基板20的面向所述薄膜晶体管的表面S1的一部分作为所述散射结构20。
在又一示例中，栅极金属层11或11’的面向衬底基板10的表面的至少一部分作为散射结构20。
例如，散射结构20直接形成在吸光材料层17的面对衬底基板10的表面上；和/或，散射结构20直接形成在吸光材料层17的面对栅极金属层11、源极层13和漏极层14的表面上。这样，散射结构20和吸光材料层17直接接触。
进一步的，参见图4，在一平面图中，栅极金属层11、源极层13和漏极层14在衬底基板10上的正投影位于吸光材料层17和散射结构20在所述衬底基板10上的正投影之内。例如，吸光材料层17和散射结构20在所述衬底基板10上的正投影彼此重合。
例如，在另一示例中，栅极金属层11和吸光材料层17在所述衬底基板10上的正投影彼此重合。
可选的，本公开实施例中，吸光材料层17例如由以下材料之一构成：碳化硅、黑色氧化锆、黑色有机材料。
需要说明的是，本公开示例的碳化硅、黑色氧化锆、黑色有机材料等仅是本公开的可选实施例；其中，黑色有机材料可以是任意的能够吸收光线的黑色材料。
例如，上述实施例中的显示屏同时包括散射结构20和吸光材料层17。然而，可以理解的是，在另外的实施例提供的显示屏可以仅包括散射结构20而不包括吸光材料层17。由于散射结构的存在，可以减少或消除阵列基板中有金属层引起的不利反光的问题。
可选的，本公开实施例显示屏为：液晶显示屏或有机发光二极管(OLED)显示屏；
可选的，本公开实施例显示屏为OLED显示屏；
所述阵列基板还包括电致发光器件18。图2中的空心箭头示出了显示屏的出光方向。从图2中可以看出在显示屏的出光方向上，吸光材料层17位于 栅极金属层11的下游。
可选的，本公开显示屏的钝化层和有源层之间还设置有刻蚀阻挡层19；
可选的，显示屏为OLED显示屏；
电致发光器件18和钝化层15之间设置有彩色滤色器层G。本公开实施例电致发光器件18可以包括阴极181、发光层182和阳极183；另外，彩膜层G可以设置于阳极183和钝化层15之间。
可选的，本公开的吸光材料层采用以下方式之一覆盖在栅极金属层上：
溅射、化学气相沉积、旋涂、线性涂覆。
需要说明的是，溅射、化学气相沉积、旋涂、线性涂覆只是本公开的可选方式，本公开也可以采用其他方式将吸光材料设置于衬底基板和栅极金属层之间，例如、真空蒸镀、印刷等，可以根据吸光材料的属性和工艺要求进行确定。
可选的，本公开的吸光材料层可以采用完全覆盖在栅极金属层的显示侧的方式设置在衬底基板和栅极金属层之间。
本公开实施例中，显示屏的阵列基板包括：衬底基板、栅极金属层、栅极绝缘层、源极、漏极、钝化层、有源层，阵列基板还包括：设置于栅极金属层的吸光材料层。通过设置于栅极金属层11的面对衬底基板10的一侧的吸光材料层，降低了处理阵列基板反光问题的工艺难度。
另外，本公开采用吸光材料进行金属层反光吸收，工艺处理难度小，且可以根据成本选择相应的材料，有利于产品的生产。
本公开还可以基于上述显示屏的结构提供制作上述显示屏的方法，只需要参照相关技术的工艺处理顺序，在衬底基板和栅极金属层之间设置吸光材料层即可。例如，栅极金属层11在衬底基板10的上表面的正投影位于吸光材料层17在衬底基板10的上表面的正投影完全重合。
本公开还提供一种显示装置200，参见图2至5，显示装200的显示屏100包括由衬底基板、栅极金属层、栅极绝缘层、源极、漏极、钝化层、有源层构成的阵列基板，阵列基板还包括：
在衬底基板和栅极金属层之间设置有吸光材料层。
本公开通过吸光材料层可以对金属层的反光进行吸收，无需额外的偏光片，避免了由偏光片的原材料和贴附工艺带来的问题。
可选的，本公开吸光材料层完全覆盖栅极金属层的显示侧。
可选的，本公开实施例显示屏为：
液晶显示屏或有机发光二极管(OLED)显示屏。
可选的，本公开实施例显示屏为OLED显示屏时，
阵列基板还包括电致发光器件；本公开实施例电致发光器件可以包括：阳极、阴极、和位于阳极和阴极之间的发光层。
可选的，本公开显示屏的钝化层和有源层之间还设置有刻蚀阻挡层。
可选的，本公开实施例显示屏为OLED显示屏；
阵列基板还包括电致发光器件。
可选的，本公开实施例显示屏为OLED显示屏；
电致发光器件和钝化层之间设置有彩膜层。
可选的，本公开吸光材料层由黑色吸光材料构成。
需要说明的是，黑色吸光材料只是本公开的一个示例实施例，本公开可以采用其他吸光材料，例如、其他颜色的吸光材料。吸光材料例如可以实现对金属层的反光进行吸收，且吸收后不会造成出现金属层的反光。
可选的，本公开吸光材料层由以下材料之一构成：碳化硅、黑色氧化锆、黑色有机材料。
需要说明的是，本公开示例的碳化硅、黑色氧化锆、黑色有机材料等仅是本公开的可选实施例；其中，黑色有机材料可以是任意的具有吸收光线的黑色材料。
可选的，本公开吸光材料层采用以下方式之一覆盖在栅极金属层上：
溅射、化学气相沉积、旋涂、线性涂覆。
需要说明的是，溅射、化学气相沉积、旋涂、线性涂覆只是本公开的可选实施例，本公开也可以采用其他方式将吸光材料设置于衬底基板和栅极金属层之间，例如、真空蒸镀、印刷等，可以根据吸光材料的属性和工艺要求进行确定。
本公开实施例中，显示屏的阵列基板包括：衬底基板、栅极金属层、栅极绝缘层、源极、漏极、钝化层、有源层，阵列基板还包括：设置于栅极金属层的吸光材料层。本公开通过设置于栅极金属层的吸光材料层，降低了处理阵列基板反光问题的工艺难度。
另外，本公开采用吸光材料进行金属层反光吸收，工艺处理难度小，且可以根据成本选择相应的材料，有利于产品的生产。
本公开另一实施例提供一种显示屏的制造方法，参见图6，包括：
提供衬底基板；
在所述衬底基板上形成所述薄膜晶体管，其中，所述薄膜晶体管包括金属层；以及
设置吸光材料层和所述散射结构的至少之一，在垂直于所述衬底基板的方向上，位于所述金属层与所述衬底基板之间。
这里，并不限制图6中的各个方框的步骤的执行顺序。
例如，所述吸光材料层和所述散射结构的所述至少之一与所述金属层直接接触。
在一个示例中，通过对衬底基板的用于形成TFT的表面的一部分通过粗糙化处理使得该部分具有凹凸不平的结构，从而作为散射结构。
在另一个示例中，通过对栅金属层的面向所述衬底基板的表面的至少一部分通过粗糙化处理使得该至少一部分具有凹凸不平的结构，从而作为散射结构。
在又一个示例中，通过对吸光材料层的面向所述衬底基板的表面的至少一部分和/或面对所述金属层的表面的至少一部分通过粗糙化处理使得该至少一部分具有凹凸不平的结构，从而作为散射结构。这样，吸光材料层和散射结构直接接触。
例如，所述金属层在所述衬底基板上的正投影位于所述吸光材料层和所述散射结构的所述至少之一在所述衬底基板上的正投影之内。
例如，所述金属层包括栅极金属层、源极金属层和漏极金属层中的至少之一。
虽然本公开所揭示的实施方式如上，但其内容只是为了便于理解本公开的技术方案而采用的实施方式，并非用于限定本公开。任何本公开所属技术领域内的技术人员，在不脱离本公开所揭示的技术方案的前提下，可以在实施的形式和细节上做任何修改与变化，但本公开所限定的保护范围，仍须以所附的权利要求书限定的范围为准。

Claims (18)

  1. 一种显示屏，包括：
    衬底基板；
    位于衬底基板上的薄膜晶体管，其中，所述薄膜晶体管包括金属层；以及
    吸光材料层和散射结构的至少之一，在垂直于所述衬底基板的方向上位于所述衬底基板与所述金属层之间。
  2. 根据权利要求1所述的显示屏，其中，所述吸光材料层对光线的吸收能力大于所述金属层对光线的吸收能力。
  3. 根据权利要求1或2所述的显示屏，其中，所述吸光材料层和所述散射结构的所述至少之一与所述金属层直接接触。
  4. 根据权利要求1至3中任一项所述的显示屏，其中，所述吸光材料层和所述散射结构分离设置，且在垂直于所述衬底基板的方向上，所述散射结构位于所述金属层与所述吸光材料层之间。
  5. 根据权利要求1至3任一项所述的显示屏，其中，所述衬底基板的面向所述薄膜晶体管的表面的一部分作为所述散射结构。
  6. 根据权利要求1至3中任一项所述的显示屏，其中，所述金属层的面向所述衬底基板的表面的至少一部分作为所述散射结构。
  7. 根据权利要求1、2、3、5和6中任一项所述的显示屏，其中，所述吸光材料层和所述散射结构直接接触。
  8. 根据权利要求1至7任一项所述的显示屏，其中，所述金属层在所述衬底基板上的正投影位于所述吸光材料层和所述散射结构的所述至少之一在所述衬底基板上的正投影之内。
  9. 根据权利要求1至8任一项所述的显示屏，其中，所述金属层包括栅极金属层、源极金属层和漏极金属层中的至少之一。
  10. 一种显示装置，包括权利要求1至9中任一项所述的显示屏。
  11. 一种显示屏的制造方法，包括：
    提供衬底基板；
    在所述衬底基板上形成所述薄膜晶体管，其中，所述薄膜晶体管包括金 属层；以及
    设置吸光材料层和所述散射结构的至少之一，在垂直于所述衬底基板的方向上，位于所述金属层与所述衬底基板之间。
  12. 根据权利要求11所述的显示屏的制造方法，其中，所述吸光材料层和所述散射结构的所述至少之一与所述金属层直接接触。
  13. 根据权利要求11或12所述的显示屏的制造方法，其中，所述吸光材料层和所述散射结构分离设置，且在垂直于所述衬底基板的方向上，所述散射结构位于所述金属层与所述吸光材料层之间。
  14. 根据权利要求11或12所述的显示屏的制造方法，其中，在所述衬底基板和所述金属层之间设置吸光材料层和散射结构的至少之一包括：
    将所述衬底基板的面向所述薄膜晶体管的表面的一部分处理为所述散射结构。
  15. 根据权利要求11或12所述的显示屏的制造方法，其中，所述在所述衬底基板和所述金属层之间设置吸光材料层和散射结构的至少之一包括：
    将所述金属层的面向所述衬底基板的表面的至少一部分处理为所述散射结构。
  16. 根据权利要求11、12、14和15中任一项所述的显示屏的制造方法，其中，所述吸光材料层和所述散射结构直接接触。
  17. 根据权利要求11至16中任一项所述的显示屏的制造方法，其中，所述金属层在所述衬底基板上的正投影位于所述吸光材料层和所述散射结构的所述至少之一在所述衬底基板上的正投影之内。
  18. 根据权利要求11至17中任一项所述的显示屏的制造方法，其中，所述金属层包括栅极金属层、源极金属层和漏极金属层中的至少之一。
PCT/CN2017/097092 2017-02-22 2017-08-11 显示屏及其制造方法和显示装置 WO2018153036A1 (zh)

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