WO2018123762A1 - Structure électriquement conductrice à base de diamant, composant électrique à base de diamant et procédé de fabrication d'une structure électriquement conductrice à base de diamant - Google Patents

Structure électriquement conductrice à base de diamant, composant électrique à base de diamant et procédé de fabrication d'une structure électriquement conductrice à base de diamant Download PDF

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Publication number
WO2018123762A1
WO2018123762A1 PCT/JP2017/045703 JP2017045703W WO2018123762A1 WO 2018123762 A1 WO2018123762 A1 WO 2018123762A1 JP 2017045703 W JP2017045703 W JP 2017045703W WO 2018123762 A1 WO2018123762 A1 WO 2018123762A1
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diamond
region
layer
structure according
conductive region
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PCT/JP2017/045703
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English (en)
Japanese (ja)
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裕 道脇
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Ｎｅｘｔ Ｉｎｎｏｖａｔｉｏｎ合同会社
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Priority claimed from JP2017231271A external-priority patent/JP6699827B2/ja
Application filed by Ｎｅｘｔ Ｉｎｎｏｖａｔｉｏｎ合同会社 filed Critical Ｎｅｘｔ Ｉｎｎｏｖａｔｉｏｎ合同会社
Publication of WO2018123762A1 publication Critical patent/WO2018123762A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C01B32/205—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern

Definitions

  • elements and wirings are formed on a semiconductor substrate (wafer) such as silicon. Specifically, a thin film layer to be a future element or wiring is formed on a substrate, a circuit pattern is transferred to the thin film layer with a photoresist, and the thin film is wired by etching using the photoresist as a mask. (See Patent Document 2).
  • the diamond-based layer has a second diamond-based layer mainly composed of a diamond-based material that becomes diamond and / or amorphous carbon on the side opposite to the base material.
  • the conductive region is formed in a band shape.
  • DLC layer 30 is a film composed mainly of amorphous carbon, but has a sp 3 bonds corresponding to the diamond structure, in part, other sp 2 bonds corresponding to the graphite structure, optionally including hydrogen bonding Therefore, it does not have a fixed crystal structure in a long-range order.
  • the thickness of the stratification is not limited to this, but may be submicron or less, for example, about several tens of atomic units, or may be on the order of several hundred ⁇ m or more.
  • the hardness of the DLC layer 30 may be lowered and flexibility may be exhibited, and the layer thickness may be increased.
  • the DLC layer 30 can be replaced with a diamond layer mainly composed of diamond, or can be combined with the diamond layer by a multilayer structure.
  • the diamond layer has a crystal structure mainly composed of sp 3 bonds corresponding to the diamond structure.
  • the diamond layer here is a non-conductor with high electrical resistivity.
  • the DLC layer 30 is laminated
  • the amorphous carbon is partially modified into graphite only in the heated portion, and the occupation ratio of graphite is increased. Accordingly, the conductive region 40 becomes a current path.
  • the heating method, heating temperature, heating time, etc. it becomes possible to adjust the depth, width, and graphite content ratio of the conductive region 40.
  • the electrical resistivity of the conductive region 40 is also improved. , And can be freely adjusted in whole or in part. Therefore, if the electric resistivity is set to a predetermined value, the conductive region 40 can be used as an electric resistance.
  • region 40 can be freely changed according to the objective. For example, it is formed in a line shape (see FIG.
  • FIG. 11A including one or a plurality of straight lines or curves, branch lines or merge lines, or a line shape including a spiral shape or a loop line shape (see FIG. 11B).
  • these lines may intersect and have intersections or a lattice shape (see FIG. 11C).
  • dots including small or minute circles, polygons, minute lines, etc. that is, dots or a group of dots composed of a plurality of dots, or an intermittent arrangement of dots.
  • FIG. 11D Of course, it is also possible to form a planar shape, a curved surface shape, or a planar shape along the surface of the base material. It can also be configured.
  • these conductive regions are formed so as to spread over the entire surface of the substrate and / or a desired region. In this way, it is possible to sense displacements, deformations, changes in physical properties, etc. at any location on the substrate.
  • the film formation method can use a well-known technique suitably.
  • various methods such as various CVD methods such as hot filament CVD and plasma CVD, and a combustion flame method using a combustion flame can be used.
  • the surface of the DLC layer 30 is heated to form a conductive region 40 inside the DLC layer 30 (conductive portion forming step).
  • the DLC layer 30 may be partially heated by irradiation with a laser beam M in an oxygen atmosphere.
  • the irradiation angle with respect to the surface of the laser beam M may be changed, and irradiation may be performed individually or simultaneously from a plurality of angles. This makes it easier to control the depth and the like of the conductive region 40.
  • the intersection is locally heated.
  • the conductive region 40 can be formed not in the surface but in the DLC layer 30.
  • only the focal position can be locally heated by focusing the focus of the laser beam M or the like inside the DLC layer 30 using an optical element such as a lens.
  • a lower cooling plate 80 is disposed on the back surface (bottom surface) side of the base material 10, and the DLC layer 30 is disposed via the base material 10 and the intermediate layer 20. Cool indirectly.
  • the DLC layer 30 may be directly cooled by bringing the upper cooling plate 90 into contact with the surface (upper surface) opposite to the substrate 10 side of the DLC layer 30.
  • the upper cooling plate 90 is provided with an opening pattern 92 having the same shape as that of the conductive region 40. As shown in FIG. 4B, the transfer pattern of the heating mold 70 is passed through the opening pattern 92. 72 is brought into contact with the DLC layer 30.
  • the upper cooling plate 90 actively absorbs the heat of the DLC layer 30 by using a material having higher thermal conductivity than the DLC layer 30, and further releases the heat to the outside by a heat sink or the like.
  • the DLC layer 30 itself becomes an insulating film and has a structure in which the conductive region 40 is formed in a part thereof, the electronic component 1 can be thinned. Therefore, it is possible to form a current-carrying structure at a site, member, or place where it is difficult to form the electronic component 1 conventionally, and the site can be the electronic component 1.
  • the electronic component 101 includes a base material (base material) 110, an intermediate layer 120, a DLC layer 130, a conductive region 140, and a cover layer 150.
  • the conductive region 140 is formed in a part of the thickness H1 in the thickness direction T of the DLC layer 130, and here is formed with a thickness H2 that is biased toward the surface opposite to the substrate 110.
  • the conductive region 140 is formed in the entire direction S along the surface of the DLC layer 130. Accordingly, the entire surface of the DLC layer 130 becomes the conductive region 140, which is a wiring having a predetermined resistance value. As a result, the electronic component 101 can be used as a resistance component.
  • the conductive region 140 is deformed in conjunction with the deformation of the base material 110, it becomes a sensor that senses the deformation amount of the base material 110 by the change in the resistance value. If the base material 110 is formed into a film and stuck to another member, it can be used as a so-called strain gauge. Of course, it is possible to detect the distortion of the base material (base material) 110 itself by forming the DLC layer 30 directly on the surface of the base material (base material) 110 and forming the desired conductive region 140. Therefore, it becomes possible to convert any object and the object itself into a sensor, and it is possible to directly measure the temperature of the substrate (base material) 110 or to measure its own strain.
  • the first conductive region 240 has a thick section 240B in which the occupation ratio in the thickness direction in the first DLC layer 230 is large and a shallow section 240A in which the occupation ratio in the thickness direction is small.
  • the shallow wall section 240A is formed in a part of the thickness H1 in the thickness direction T of the first DLC layer 230, and here is formed with a thickness H2 that is biased toward the surface opposite to the substrate 210.
  • the thick section 240B is formed in the entire thickness H1 of the first DLC layer 230 in the thickness direction T. Therefore, the intermediate layer 220 and the base material 210 are electrically connected, and power can be supplied to the first conductive region 240 via the power supply terminal X of the base material 210.
  • the first conductive region 240 is formed in the entire direction S along the surface of the first DLC layer 230.
  • the second conductive region 242 is formed in a part of the thickness H1 in the thickness direction T of the second DLC layer 232, and here, the second conductive region 242 is formed with a thickness H2 that is biased toward the surface opposite to the substrate 210.
  • the second conductive region 242 is formed in the entire direction S along the surface of the second DLC layer 232. Therefore, by providing the power supply terminal Y for the second conductive region 242, power can be supplied to the second conductive region 242.
  • the electronic component 201 can be used as an electrode of a capacitor because the first conductive region 240 and the second conductive region 242 are arranged in parallel with a certain interval through the second DLC layer 232.
  • region 242 is not limited to a present Example, You may make it a comb-tooth shape or a radial shape.
  • the electronic component 301 includes a base material (base material) 310, an intermediate layer 320, a DLC layer 330, a conductive region 340, and a cover layer 350.
  • the conductive region 340 has a strip shape having a width W.
  • the conductive region 340 further includes a thick section 340B in which the occupation ratio in the thickness direction in the DLC layer 230 is increased and a shallow section 340A in which the occupation ratio in the thickness direction is decreased.
  • the shallow section 340A is formed in a part of the thickness H1 in the thickness direction T of the DLC layer 330, and here is formed with a thickness H2 that is biased toward the surface opposite to the substrate 310.
  • the thick section 340 ⁇ / b> B is formed in a part of the thickness H ⁇ b> 1 in the thickness direction T of the DLC layer 230, and is formed with a thickness H ⁇ b> 3 that is biased toward the surface opposite to the base material 310.
  • This thickness H3 is larger than the thickness H2 of the shallow section 340A.
  • a plurality of thick sections 340B are formed at predetermined intervals along the band direction. Here, the case where the thicknesses H3 of the plurality of thick sections 340B coincide with each other is illustrated, but the thickness of each thick section 340B may be different from each other.
  • the thick section 340B and the thin section 340A can be formed by different heating means, heating temperature, heating time, number of heating, and heating method. Note that the thick section 340B may have a higher heating temperature, a longer heating time, or a higher number of heating times than the thin section 340A. Since the thick section 340B has a larger volume (cross-sectional area) than the thin section 340A, the electrical resistance decreases. The thick section 340B has a higher graphite content than the thin section 340A, so the electrical resistivity is also lowered.
  • a resistance component having a predetermined resistance value is obtained.
  • the resistance value changes when the DLC layer 330 and the conductive region 340 are deformed due to the deformation of the base material 310, it can be applied to an electronic component such as a strain sensor or a vibration sensor.
  • the thick section 340B and the thin section 340A having different resistance values are alternately repeated, the amount of change in the resistance value due to the deformation of the base material 310 can be increased.
  • 340G can also be formed.
  • the heating temperature and the heating method it is preferable to make the heating temperature and the heating method different from each other.
  • dope non-carbon components into the DLC layer 330 For example, local modification of the DLC layer 330 is possible by ion doping, and an additional function can be given to the local part by doping ions.
  • the electronic component 401 includes a base material (base material) 410, an intermediate layer 420, a DLC layer 430, a plurality of conductive regions 440, and a cover layer 450.
  • the plurality of conductive regions 440 are in an electrically independent state (electrically floating island state) only within the DLC layer 430.
  • Each conductive region 440 is formed in a part of the thickness H1 in the thickness direction T of the DLC layer 430, and here is formed with a thickness H2 that is biased toward the surface opposite to the substrate 410. Further, the conductive region 440 is formed in a part of the direction S along the surface of the DLC layer 430.
  • the resistance value of the DLC layer 430 remaining in the gap is reduced.
  • the power supply terminal X is provided in the conductive region 440 at one end
  • the electrode supply terminal Y is provided in the conductive region 440 at the other end. If a voltage is applied between them, a current flows through the plurality of conductive regions 440 and the DLC layer 430 remaining therebetween, thereby forming a high resistance component. Further, when the DLC layer 430 and the conductive region 440 are deformed due to the deformation of the base material 510, the resistance value is changed, so that it can be applied to electronic components such as a strain sensor and a vibration sensor.
  • an electronic component 501 according to a sixth embodiment of the present invention will be described with reference to FIG. Since the sixth embodiment is a modification of the electronic component 401 of the fifth embodiment, members having the same name and the same reference numerals as the electronic component 401 described in the fourth embodiment are the last two digits. The detailed description of each is omitted.
  • This electronic component 501 has a base material (base material) 510, an intermediate layer 520, a first DLC layer 530, a plurality of first conductive regions 540, a second DLC layer 432, and a plurality of second conductive regions 542.
  • the plurality of first conductive regions 540 are in an electrically independent state (electrically floating island state) only within the first DLC layer 530.
  • the plurality of second conductive regions 542 are in an electrically independent state (electrically floating island state) only within the second DLC layer 532.
  • the plurality of first conductive regions 540 and the plurality of second conductive regions 542 are alternately arranged when seen in a plan view. It becomes wiring. That is, the second conductive regions 542 are arranged so as to bridge between a pair of adjacent first conductive regions 540. Since the edge of each first conductive region 540 and the edge of each second conductive region 542 are close to each other via the second DLC layer 532, a high voltage is applied when a high voltage is applied between both ends. A minute current flows in the second DLC layer 532.
  • a power supply terminal X is provided in the second conductive region 542 at one end among the plurality of second conductive regions 542, and an electrode is supplied to the second conductive region 542 at the other end. If a terminal Y is provided and a voltage is applied between them, a relatively high resistance component is obtained. According to this structure, when the first and second DLC layers 530 and 532 and the first and second conductive regions 540 and 542 are deformed due to the deformation of the base material 510, the resistance value changes. It can be applied to electronic parts such as vibration sensors.
  • the electronic component 601 includes a base material (base material) 610, an intermediate layer 620, a DLC layer 630, a conductive region 640, and a cover layer 650.
  • the conductive region 640 is formed in a part of the thickness H1 in the thickness direction T of the DLC layer 630, and here is formed with a thickness H2 that is biased toward the surface of the substrate 610 side.
  • the conductive region 640 is formed in the entire direction S along the surface of the DLC layer 630. In this case, since the conductive region 640 is covered with the DLC layer 630, the DLC layer 630 itself can also serve as the cover layer. Note that when the conductive region 640 is formed, the base material (base material) 610 or the intermediate layer 620 may be heated.
  • the DLC layer laminated on the base material is employed as the diamond-based region mainly composed of diamond and / or the diamond-based material to be amorphous carbon is exemplified. It is not limited.
  • This electronic component 701 has a three-dimensional diamond-based region 735 and conductive regions 740A and 740B partially formed in the diamond-based region 735 as a current-carrying structure.
  • the diamond-based region 735 has a crystal structure mainly composed of diamond.
  • the diamond-based region 735 is a natural diamond or an artificially synthesized synthetic diamond.
  • synthetic diamond conventionally known synthetic methods such as high-temperature and high-pressure vapor deposition or CVD can be employed.
  • the conductive regions 740A and 740B have a higher graphite content ratio than the diamond-based material in the diamond-based region 735 and a lower electrical resistivity than the diamond-based material. Accordingly, the conductive regions 740 ⁇ / b> A and 740 ⁇ / b> B constitute an energization path in the electronic component 701.
  • the conductive regions 740A and 740B are formed at least on the surface or inside of the diamond-based region 735.
  • the case where the conductive regions 740A and 740B are formed in a planar shape inside the three-dimensional diamond-based region 735 is illustrated. Yes.
  • one conductive region 740A is formed in a predetermined plane in the XY direction inside the diamond-based region 735.
  • the conductive region 740A may be formed over the entire area in this plane, and forms such as those shown in the first to seventh embodiments can be applied.
  • the other conductive region 740B is formed in a predetermined plane in the YZ direction inside the diamond-based region 735.
  • the conductive region 740B may be formed in the entire area in this plane, and forms such as those shown in the first to seventh embodiments can be applied.
  • a portion (intersection or intersection line) where the conductive region 740A and the conductive region 740B intersect with each other is a place where the two are electrically connected to each other.
  • the conductive regions 740A and 740B have a current path structure extending in the three-dimensional direction as a whole.
  • the conductive regions 740A and 740B may be formed, for example, by irradiating the diamond region 735 with a laser beam M and partially heating it. At this time, it is also possible to perform control so as to suppress the transfer of heat to the outside of the target area by irradiating an extremely short pulse laser such as a femtosecond laser.
  • an extremely short pulse laser such as a femtosecond laser.
  • the focal point of the laser beam M may be set so as to be positioned inside the diamond-based region 735. That is, the laser beam M may be condensed at a specific location inside the diamond-based region 735.
  • a channel element such as a slit shape or a pinhole shape may be arranged in the middle of the optical path of the laser beam M to control the focal shape of the laser beam M. Further, by arranging a wavefront control element such as a hologram, the laser beam M may be focused so as to form a specific image in the diamond-based region 735.
  • This electronic component 801 has a three-dimensional diamond-based region 835 and a conductive region 840 partially formed in the diamond-based region 835 as a current-carrying structure.
  • the conductive region 840 has a higher graphite content ratio than the diamond-based material in the diamond-based region 835 and has a lower electrical resistivity than the diamond-based material. Therefore, the conductive region 840 forms a current path in the electronic component 801.
  • the conductive region 840 is an energization path that freely extends in a three-dimensional direction, and has a branch point (confluence) on the way, so that it is branched inside. Each energization path becomes an external contact at a portion reaching the outer surface of the diamond-based region 835. As a result, a three-dimensional wiring structure can be freely constructed inside the diamond-based region 835. Accordingly, in the middle of the current path, for example, a conductive region 840A having a sensor function, a conductive region 840B having a resistance function, a conductive region 840C having a capacitor function, a conductive region 840D having a switching function, etc. It is also possible to build in.
  • This electronic component 901 has a three-dimensional diamond-type region 935 and a conductive region 940 partially formed in the diamond-type region 935 as a current-carrying structure.
  • the diamond-type region 935 having a three-dimensional shape has a complicated outer shape by forming notches 935A and the like that can be applied to various shapes such as slits and holes.
  • the notched portion 935A is obtained by irradiating the diamond-based region 935 with a laser beam M or the like and locally heating the diamond-based region 935 to 800 ° C. or more to eliminate the irradiated diamond as carbon dioxide. Should be formed. That is, by controlling the laser beam M, a notch 935A having an arbitrary shape can be formed, and a target three-dimensional diamond region 935 can be obtained.
  • the conductive region 940 is formed on the surface of the notch 935A or in the vicinity thereof.
  • the surface of the notch 935 or the like may be irradiated with a laser beam M or the like.
  • the conductive region 940 can be simultaneously formed on the processed surface of the notch 935 in the process of forming the notch 935A in FIG.
  • the etched diamond region 935 itself can be used as a substrate or an element of a vibrator or a sensing device. Further, by applying a voltage to the diamond region 935 using the conductive region 940 formed in the diamond region 935, a mechanical element component, a sensor, a vibrator, an actuator, or the like can be formed as the electronic component 901. It can function as a MEMS element.
  • the laser beam M is absorbed so as to be in close contact with or close to the diamond-based region 1030 at a position opposite to the irradiation position of the laser beam M of the diamond-based region 1030 having high light transmittance.
  • the temperature rising layer 1060 is provided.
  • the intermediate layer and / or the base material are omitted.
  • the laser beam passes through the diamond-based region and the diamond-based region is not heated or difficult to be heated.
  • the conductive region can be generated by indirectly heating the diamond-based region through the temperature layer.
  • the laser beam M irradiated in the arrow direction in an oxygen atmosphere is absorbed by the surface 1060a of the temperature rising layer 1060 on the diamond-based region 1030 side through the diamond-based region 1030. Then, the surface 1060a of the temperature raising layer 1060 is partially heated to raise the temperature. The heat due to the temperature rise is transferred by heat conduction to the opposing surface of the diamond-based region 1030 facing the temperature-raising portion, whereby the diamond-based region 1030 is locally heated and denatured into the conductive region 1040.
  • the laser beam M may be scanned in a desired pattern on the surface 1060a of the temperature rising layer 1060.
  • any visible light such as a gas flow laser can be used.
  • ceramics such as silicon nitride, silicon carbide, zirconia, silica, and titanium oxide can be used, as long as they absorb visible light such as a laser beam and generate heat efficiently. It is preferable that it has a light shielding property against visible light irradiated with a laser beam or the like and has a low reflectance. Although it does not specifically limit as a color, Black is preferable and in the case of other colors, the color with low brightness, such as dark brown and dark green, is preferable. Moreover, since the temperature which denatures a diamond-type area
  • the temperature raising layer may be a material having low thermal conductivity such as a porous material.
  • a material having low thermal conductivity such as a porous material.
  • Methods for forming the temperature rising layer in close contact with the diamond-based region include coating, plating, coating, etc., attaching a sheet-like temperature rising layer with an adhesive, or attaching a seal-like temperature rising layer. It is possible.
  • the temperature raising layer is arranged on the front side of the diamond-based region as viewed from the irradiation position of the laser beam.
  • the electronic component 1101 has a laser beam in close contact with or close to the irradiation region of the laser beam M of the diamond-based region 1130 with high light transmittance.
  • a temperature rising layer 1160 that absorbs M is included.
  • the intermediate layer and / or the base material are omitted. With this configuration, since the laser beam is directly irradiated onto the temperature rising layer, the temperature rising layer can be efficiently heated as compared with the eleventh embodiment.
  • the laser beam M irradiated in the arrow direction in an oxygen atmosphere is absorbed by the surface 1160a of the temperature rising layer 1160, and the surface 1160a of the temperature rising layer 1160 is partially heated. Then raise the temperature.
  • the atmosphere is oxygen, but it may be in the air or an inert gas atmosphere.
  • the heat of the surface 1160a of the temperature rising layer 1160 is transmitted through the temperature rising layer 1160 to partially heat the back surface 1160b corresponding to the surface portion. Heat due to the temperature rise on the back surface of the temperature raising layer is transferred by heat conduction to the opposing surface of the diamond-based region 1130 facing the back-side temperature-raising portion, whereby the diamond-based region 1130 is locally heated. Denatured into a conductive region 1140.
  • the laser beam M is absorbed so as to be in close contact with or close to the diamond-based region 1230 at a position opposite to the irradiation position of the laser beam M of the diamond-based region 1230 having high light transmittance.
  • a linear temperature rising layer 1260 is provided.
  • the linear heating layer may be directly applied to or pasted on the diamond-based region 1230, or as shown in FIG. 18B of the third modification, the linear heating layer may be applied to the planar sheet 1361.
  • the temperature rising layer 1362 may be integrally formed, and a planar transparent sheet 1361 may be attached to the diamond-based region 1330.
  • the temperature rising layer is irradiated with a laser beam that is visible light to raise the temperature.
  • a laser beam that is visible light
  • electromagnetic waves other than visible light may be used.
  • the color of the temperature raising layer does not necessarily need to be a color with low brightness, and any material that can easily absorb electromagnetic waves or the like may be used.
  • the intermediate layer or the base material adjacent to the diamond-based region described in the first embodiment or the like may be added with a function as a heating layer, and the intermediate layer or the base material may be heated, or You may make it heat up a heating type
  • the diamond-based region is placed in a high-temperature field atmosphere, and the diamond-based region is heated in advance to a temperature range slightly less than the amount of heat required for modification to the conductive region.
  • the diamond-based region is heated in advance to a temperature range slightly less than the amount of heat required for modification to the conductive region.
  • the electronic component and the like of the present invention are not limited to the above-described embodiments, and it is needless to say that various changes can be made without departing from the gist of the present invention. Further, the energization structure shown in the above embodiment can be applied to other parts and members that require energization in addition to so-called electronic components.

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Abstract

Le problème décrit par la présente invention est de permettre de former une structure électriquement conductrice au niveau de divers emplacements ou dans divers éléments par l'intermédiaire d'un procédé de fabrication simple. La solution selon l'invention porte sur une structure électriquement conductrice qui est pourvue : d'une région à base de diamant 20 à base de diamant et/ou d'un matériau à base de diamant qui devient du carbone amorphe; et d'une région électriquement conductrice 30 qui est formée partiellement dans la région à base de diamant 20, comporte une teneur en graphite plus élevée que celle du matériau à base de diamant, et possède une résistivité électrique inférieure à celle du matériau à base de diamant.
PCT/JP2017/045703 2016-12-27 2017-12-20 Structure électriquement conductrice à base de diamant, composant électrique à base de diamant et procédé de fabrication d'une structure électriquement conductrice à base de diamant WO2018123762A1 (fr)

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JP2016253759 2016-12-27
JP2016-253759 2016-12-27
JP2017035175 2017-02-27
JP2017-035175 2017-02-27
JP2017-231271 2017-11-30
JP2017231271A JP6699827B2 (ja) 2016-12-27 2017-11-30 ダイヤモンド系通電構造の製造方法

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03254144A (ja) * 1990-02-23 1991-11-13 A M Dreschhoff Jisera ダイヤモンド格子基板に導電領域を形成する方法及び導電領域を有するダイヤモンド格子層を備えた電気デバイス
JPH05117088A (ja) * 1991-10-25 1993-05-14 Sumitomo Electric Ind Ltd ダイヤモンドのｎ型及びｐ型の形成方法
JPH0737835A (ja) * 1993-06-28 1995-02-07 Matsushita Electric Ind Co Ltd ダイヤモンド半導体素子およびその電極の形成方法
JPH10261712A (ja) * 1997-03-19 1998-09-29 Sanyo Electric Co Ltd 導電領域の形成方法及び薄膜素子
JP2005228852A (ja) * 2004-02-12 2005-08-25 Seiko Epson Corp 強誘電体キャパシタ及びその形成方法、ならびに強誘電体メモリ
JP2005294413A (ja) * 2004-03-31 2005-10-20 Namiki Precision Jewel Co Ltd ダイヤモンド電子回路基板及びその製造方法
JP2008252107A (ja) * 2001-01-19 2008-10-16 Chevron Usa Inc マイクロエレクトロニクスにおけるダイヤモンドイド含有材料
JP2009009718A (ja) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Ｄｌｃ皮膜の加工方法及び電気接点構造
JP2016134597A (ja) * 2015-01-22 2016-07-25 アルプス電気株式会社 配線基板及びその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03254144A (ja) * 1990-02-23 1991-11-13 A M Dreschhoff Jisera ダイヤモンド格子基板に導電領域を形成する方法及び導電領域を有するダイヤモンド格子層を備えた電気デバイス
JPH05117088A (ja) * 1991-10-25 1993-05-14 Sumitomo Electric Ind Ltd ダイヤモンドのｎ型及びｐ型の形成方法
JPH0737835A (ja) * 1993-06-28 1995-02-07 Matsushita Electric Ind Co Ltd ダイヤモンド半導体素子およびその電極の形成方法
JPH10261712A (ja) * 1997-03-19 1998-09-29 Sanyo Electric Co Ltd 導電領域の形成方法及び薄膜素子
JP2008252107A (ja) * 2001-01-19 2008-10-16 Chevron Usa Inc マイクロエレクトロニクスにおけるダイヤモンドイド含有材料
JP2005228852A (ja) * 2004-02-12 2005-08-25 Seiko Epson Corp 強誘電体キャパシタ及びその形成方法、ならびに強誘電体メモリ
JP2005294413A (ja) * 2004-03-31 2005-10-20 Namiki Precision Jewel Co Ltd ダイヤモンド電子回路基板及びその製造方法
JP2009009718A (ja) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Ｄｌｃ皮膜の加工方法及び電気接点構造
JP2016134597A (ja) * 2015-01-22 2016-07-25 アルプス電気株式会社 配線基板及びその製造方法

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