WO2018098647A1 - 集成电路多芯片层叠封装结构以及方法 - Google Patents
集成电路多芯片层叠封装结构以及方法 Download PDFInfo
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- WO2018098647A1 WO2018098647A1 PCT/CN2016/107831 CN2016107831W WO2018098647A1 WO 2018098647 A1 WO2018098647 A1 WO 2018098647A1 CN 2016107831 W CN2016107831 W CN 2016107831W WO 2018098647 A1 WO2018098647 A1 WO 2018098647A1
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Definitions
- the invention belongs to the field of electronics, and in particular relates to an integrated circuit multi-chip stacked package structure and method.
- the conventional integrated circuit multi-chip lamination packaging method often uses a wire bonding method to connect the circuits on each chip to the circuits on the substrate. Since the leads occupy a large amount of space, the overall integrated circuit package formed is bulky and required between the leads. Mutual avoidance, further reducing the number of leads that can be wired, low space utilization, resulting in a small number of connections between the chip and peripheral circuits, restricting the density and total amount of data communication ports, and limiting the expansion of circuit functions. Moreover, the wire bonding is sequentially bonded one by one, the packaging efficiency is low, and the expensive gold wire or the copper wire of the complicated component is required, and the manufacturing cost is high.
- the present invention overcomes the defects of the prior art, and provides an integrated circuit multi-chip stacked package structure and method, wherein the chip and the circuit layer are connected with high density, small volume, and low production cost.
- An integrated circuit multi-chip package structure comprising: a first chip, a first pin of the first chip is provided with a first pin; a second chip, a top surface of the second chip is provided with a second pin; a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate; wherein the first chip is disposed on a top surface of the substrate The second chip is disposed on a top surface of the first chip; the first pin is electrically connected to at least one of the circuit layers: the circuit layer is provided with a circuit pin, and the substrate is provided with a connection a through hole, the connection through hole abutting the circuit pin, a first opening of the connection through hole abutting the first pin, and a second opening of the connection through hole is an operation window, the connection a conductive layer is disposed in the through hole, the conductive layer electrically connecting the first pin and the circuit pin; the second pin is electrically connected
- the second chip is at least two, at least two of the second chips are stacked, and among the two adjacent second chips, the second chip of the top layer is mounted on the bottom layer. a top surface of the second chip, and the second chip of the top layer is offset from the second pin on the second chip of the bottom layer.
- the top surface of the second chip of the topmost layer is provided with a heat sink.
- an adhesive film is disposed between the first chip and the substrate, the adhesive film adheres the first chip to the substrate, and the adhesive film is provided with an additional pass. a hole, the additional through hole communicating with the first opening of the connection through hole, and the conductive layer extending into the additional through hole is electrically connected to the first pin.
- the integrated circuit multi-chip package structure further includes an encapsulation layer, the first chip and the second chip are located between the encapsulation layer and an associated substrate, and the encapsulation layer is to be A chip and the second chip are packaged on a top surface of the substrate.
- the top surface of the substrate is further provided with a reinforcing strip that surrounds or partially surrounds the periphery of the chip.
- the top surface of the substrate is further provided with an encapsulation layer
- the encapsulation layer comprises a filling layer and a shell layer
- the filling layer, the reinforcing strip, the first chip, and the first Two chips are located between the outer shell layer and the substrate, one end of the reinforcing strip abuts the substrate, and the other end abuts the outer shell layer, and the filling layer is filled in the outer shell layer and the substrate between.
- the substrate comprises at least two substrates, at least two of which are stacked, the substrate is provided with the circuit layer, at least one of the substrates is provided with a via, and is electrically conductive Material passes through the via to electrically connect at least two of the circuit layers.
- the substrate, the encapsulation layer, the first chip and the second chip constitute a package subsystem, and the two package subsystems are stacked, and the substrate of the top package subsystem Provided on a top surface of the encapsulation layer of the encapsulation subsystem of the bottom layer, the encapsulation layer of the encapsulation subsystem of the bottom layer is provided with a through hole, a conductor is disposed in the perforation, and the conductor in the perforation and the encapsulation subsystem of the top layer are The conductive layer in the connection via is electrically connected, and the conductor in the via and the underlying package The circuit layer is electrically connected.
- the substrate is provided with at least two layers of the circuit layer, the top surface of the substrate is provided with the circuit layer, or/and the bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate, the first pins are at least two, wherein one of the first pins is electrically connected to at least one of the circuit layers, and the other of the first pins is at least One of the circuit layers is electrically connected.
- the substrate is a flexible circuit board, or the substrate comprises at least two layers of flexible circuit boards stacked.
- An integrated circuit multi-chip package packaging method includes: a first pin is disposed on a bottom surface of the first chip, a second pin is disposed on a top surface of the second chip, and the second chip is disposed on the first chip a top surface; a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate, and the circuit layer is provided with a circuit pin.
- the substrate is provided with a connection via, the circuit pin is butted to the connection via; the first pin is electrically connected to at least one of the circuit layers, and the first chip is placed on the substrate, the first a bottom surface of a chip faces the substrate, a first opening of the connection via is docked with the first pin, and a conductive layer is formed in the connection via through a second opening of the connection via a conductive layer electrically connecting the first pin and the circuit pin; electrically connecting the second pin to at least one of the circuit layers, the second pin and the The circuit layers are electrically connected.
- An integrated circuit multi-chip package packaging method includes: a first pin is disposed on a bottom surface of the first chip, a second pin is disposed on a top surface of the second chip, and the second chip is disposed on the first chip a top surface; a first chip is disposed on the substrate, a bottom surface of the first chip faces the substrate, a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate, the circuit layer is provided with a circuit pin; the first pin is electrically connected to at least one of the circuit layers, and a connection through hole is formed on the substrate, so that the a first opening of the connection via is docked with the first pin, and the circuit pin is docked with the connection via, and a conductive layer is formed in the connection via through the second opening of the connection via Having the conductive layer electrically connect the first pin and the circuit pin; the second pin is electrically connected to at least one of the circuit
- the integrated circuit multi-chip package structure includes: a first chip, a first pin is disposed on a bottom surface of the first chip; a second chip, a second pin is disposed on a top surface of the second chip; a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate; wherein the first chip is disposed on a top surface of the substrate, The second chip is disposed on a top surface of the first chip; the first pin is electrically connected to at least one of the circuit layers, the circuit layer is provided with a circuit pin, and the substrate is provided with a connection a hole, the connection through hole is butted to the circuit pin, a first opening of the connection through hole is butted to the first pin, and a second opening of the connection through hole is an operation window, and the connection is a conductive layer is disposed in the hole, the conductive layer electrically connecting the first pin and the circuit pin; the second pin is electrical
- the first chip is disposed on a top surface of the substrate, and the second chip is disposed on a top surface of the first chip; the two chips are stacked, the first pin is located on a bottom surface of the first chip, and the conductive layer is
- the circuit pin is electrically connected to the circuit pin of the circuit layer on the substrate, and the second pin is located on the top surface of the second chip, and is electrically connected to the circuit pin of the circuit layer on the substrate through the conductive lead.
- the circuit is connected through the lower side of the first chip and the space above the second chip, and the second chip does not block the electrical connection between the first pin and the circuit pin, and the first chip does not block the second pin and the circuit lead.
- the electrical connection of the foot provides sufficient space for the connection of the first chip and the second chip to the substrate; when the first chip is placed on the top surface of the substrate, the first pin is located between the first chip and the substrate,
- the connection via provides an operation space for fabricating the conductive layer, so that the conductive layer can be electrically connected to the circuit pin and the first pin at the same time, thereby electrically connecting the first pin and the circuit pin to realize the first chip and the substrate circuit layer Electrical connection.
- the first chip and the second chip are electrically connected to the circuit layer of the substrate from the top surface and the bottom surface respectively, the connection point is increased, the transmission capability is enhanced, the connection range of the chip can be expanded, and more connections are realized, and as many as possible
- the chip is disposed on the substrate.
- the conventional electronic package uses a wire to realize electrical connection between the chip and the circuit layer of the substrate, and the wire occupies a large space.
- the present invention realizes the first chip and the circuit layer by opening a connection via hole on the substrate.
- the electrical connection, the conductive layer is disposed in the connecting through hole, does not occupy extra space, and can reduce the overall volume after packaging.
- the conductive via can be fabricated without the step of heating at a high temperature, for the ultra-thin chip
- the use of a flexible circuit board is very helpful because the method of the present invention can avoid damage to the mechanism and performance of ultra-thin chips and flexible circuit boards by various thermo-mechanical stress distributions during high-temperature thermal cycling.
- top and bottom orientations refer to the orientations shown in the drawings, but only for the sake of clarity and conciseness, and the orientation created by the present invention cannot be limited thereto, and the integrated circuit multi-chip laminated package structure can be rotated to any angle
- the second chip is at least two, at least two of the second chips are stacked, and among the two adjacent second chips, the second chip of the top layer is mounted on the second layer of the bottom layer. a top surface of the chip, and the second chip of the top layer is offset from the second pin on the second chip of the bottom layer.
- the top surface of the first chip may be provided with at least two second chips to achieve more electronic functions.
- the top surface of the second chip of the top layer is provided with a heat sink.
- Heat dissipation is a major problem in chip-stack packaging. Multi-chip stacking increases the density of electronic functions and increases the energy consumption per unit area without increasing the area of heat dissipation.
- a heat dissipating device is disposed on the top of the second chip to provide at least a heat dissipation method for the heat generated by the chip or the heat generated in the operation, which helps overcome the technical bottleneck of the chip heat dissipation and avoids the high temperature affecting the performance of the chip.
- An adhesive film is disposed between the first chip and the substrate, the adhesive film attaches the first chip to the substrate, and the adhesive film is provided with an additional through hole, the additional The through hole is in communication with the first opening of the connection via, and the conductive layer extends into the additional via to be electrically connected to the first pin.
- the first chip is attached to the substrate through the adhesive film, and the first chip is fixed on the substrate during the process of placing the first chip on the substrate, which is high in efficiency, facilitates batch operation, and the adhesive film is provided with additional through holes. Does not affect the electrical connection of the conductive layer to the first pin.
- the adhesive film itself may be provided with an adhesive-free region in advance, which does not cover the first pin when placed, and directly forms the additional through hole in the adhesive-free region, and the first pin is directly connected.
- the through hole and the conductive layer may be directly connected to the first lead; or, after the first chip is pasted on the substrate, an additional through hole may be formed in the adhesive film.
- the integrated circuit package structure further includes an encapsulation layer, wherein the first chip and the second chip are located between the encapsulation layer and an associated substrate, and the encapsulation layer is to be the first chip, the first Two core
- the sheet is packaged on the top surface of the substrate.
- the encapsulation layer can protect the first chip and the second chip from damage and is protected from external environmental factors.
- the first chip and the second chip may also be fixed on the substrate through the encapsulation layer, and the relative positions of the chip and the pin are fixed, which helps to form a stable circuit connection, and can also improve the heat by adjusting the material properties of the encapsulation layer.
- the distribution of mechanical stress improves the thermo-mechanical reliability of the entire system, and the first chip and the second chip are fixed to the substrate at the same time by setting the encapsulation layer on the substrate, and the production efficiency is high.
- the top surface of the substrate is further provided with a reinforcing strip surrounding or partially surrounding the chip.
- the height of the protrusion of the reinforcing strip on the substrate is equivalent to the height of the chip, and the reinforcing strip provides protection for the chip to prevent the chip from being squeezed, displaced, and bent.
- the first chip and the second chip form a chipset, and the chipset can be multiple.
- the reinforcing strip may surround or partially surround a chip set; or the reinforcing strip may surround or partially surround the two or more chipsets; or, the plurality of reinforcing strips may partially surround one or more chipsets.
- the reinforcing strips may be in the form of a continuous strip or a discontinuous strip with a gap, as desired.
- the top surface of the substrate is further provided with an encapsulation layer
- the encapsulation layer includes a filling layer and a shell layer
- the filling layer, the reinforcing strip, the first chip, and the second chip are located at Between the outer shell layer and the substrate, one end of the reinforcing strip abuts against the substrate, and the other end abuts the outer shell layer, and the filling layer is filled between the substrate and the outer shell layer.
- the substrate, the reinforcing strip and the outer shell layer form a relatively stable space, and the chip is installed in the space.
- the outer shell layer, the reinforcing strip and the filling layer provide support for the chip, so as to prevent the chip from being squeezed during the packaging process or during use. Pressure, displacement, and bending.
- the substrate comprises at least two substrates, at least two of which are stacked, the substrate is provided with the circuit layer, at least one of the substrates is provided with a via, and a conductive material passes through the The vias electrically connect at least two of the circuit layers. Two or more substrates are stacked, and a multi-layer circuit is provided to expand the electronic function.
- the substrate, the encapsulation layer, the first chip and the second chip form a package subsystem
- the two package subsystems are stacked, the substrate of the top package subsystem is disposed on a top surface of the package layer of the bottom package, and the package layer of the package subsystem is provided with a through hole.
- a conductor is disposed in the through hole, and the conductor in the through hole is electrically connected to the conductive layer in the connection through hole of the top package substrate, and the conductor in the through hole and the circuit layer of the package subsystem in the bottom layer are electrically connection.
- the two or more package subsystems are stacked and connected to each other, increasing the number of communication ports, increasing data transmission speed and bandwidth, and expanding circuit functions.
- the first chip is connected to the circuit layer of the substrate by connecting through holes, so that the thickness of the package subsystem itself is small and the volume is small. In the same volume and thickness requirements, more layers of package subsystems can be set, which greatly expands the circuit function.
- the substrate is provided with at least two layers of the circuit layer, the top surface of the substrate is provided with the circuit layer, or/and the bottom surface of the substrate is provided with a circuit layer, or/and the substrate is provided a circuit layer, the first pin is at least two, wherein one of the first pins is electrically connected to at least one of the circuit layers, and the other of the first pins is at least with another circuit layer remaining Electrical connection.
- the first chip is connected to two or more circuit layers at the same time, the data communication port is increased, the data transmission capability is enhanced, and the circuit function is expanded.
- the substrate is a flexible circuit board, or the substrate comprises at least two layers of flexible circuit boards stacked.
- the substrate, the encapsulation layer, the first chip and the second chip constitute a whole body having a small thickness and a small volume, so that when a flexible circuit board is used, the entire system can be kept flexible. Flexible for use in wearable systems.
- An integrated circuit multi-chip package package method comprising: a first pin is disposed on a bottom surface of the first chip, a second pin is disposed on a top surface of the second chip, and the second chip is disposed on the first a top surface of the chip; a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or/and a circuit layer is disposed in the substrate, and the circuit layer is provided with a circuit pin
- the substrate is provided with a connection via, the circuit pin is connected to the connection via; the first pin is electrically connected to at least one of the circuit layers, and the first chip is placed on the substrate.
- a bottom surface of the first chip faces the substrate, a first opening of the connection via is docked with the first pin, and a conductive layer is formed in the connection via through a second opening of the connection via
- the conductive layer electrically connects the first pin and the circuit pin; electrically connecting the second pin to at least one of the circuit layers, and the second pin is connected by a conductive lead
- the circuit layers are electrically connected.
- connection via hole is formed in advance on the substrate, and after the first chip is placed on the substrate, a conductive layer is formed.
- the first pin is connected to the first opening of the connection via hole, and is not necessarily strictly aligned, as long as the first pin is electrically connected to the conductive layer through the connection via.
- An integrated circuit multi-chip stacked package method comprising: a first pin is disposed on a bottom surface of the first chip, a second pin is disposed on a top surface of the second chip, and the second chip is disposed on the first a top surface of the chip; a first chip is disposed on the substrate, a bottom surface of the first chip faces the substrate, a top surface of the substrate is provided with a circuit layer, or/and a bottom surface of the substrate is provided with a circuit layer, or And a circuit layer is disposed in the substrate, the circuit layer is provided with a circuit pin; the first pin is electrically connected to at least one of the circuit layers, and a connection through hole is formed on the substrate, so that a first opening of the connection via is docked with the first pin, and the circuit pin is docked with the connection via, and a second opening through the connection via is formed in the connection via a conductive layer, the conductive layer electrically connecting the first pin and the circuit pin; a second pin of the second chip is electrical
- FIG. 1 is a first schematic diagram of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention
- FIG. 2 is a second schematic diagram of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention
- FIG. 3 is a third schematic diagram of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention.
- FIG. 4 is a fourth schematic diagram of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention.
- FIG. 5 is a schematic diagram 5 of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention.
- FIG. 6 is a schematic diagram 6 of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention.
- FIG. 7 is a schematic diagram 7 of an integrated circuit multi-chip lamination and packaging method according to an embodiment of the present invention.
- FIG. 8 is a first schematic diagram of a method for stacking and packaging integrated circuit multi-chip according to a second embodiment of the present invention.
- FIG. 9 is a second schematic diagram of an integrated circuit multi-chip lamination and packaging method according to Embodiment 2 of the present invention.
- FIG. 10 is a schematic diagram of a method for stacking and packaging integrated circuit multi-chip according to Embodiment 3 of the present invention.
- FIG. 11 is a first schematic diagram of a method for stacking and packaging integrated circuit multi-chip according to a fifth embodiment of the present invention.
- FIG. 12 is a second schematic diagram of an integrated circuit multi-chip lamination and packaging method according to Embodiment 5 of the present invention.
- FIG. 13 is a third schematic diagram of an integrated circuit multi-chip lamination and packaging method according to Embodiment 5 of the present invention.
- FIG. 14 is a fourth schematic diagram of a method for stacking and packaging integrated circuit multi-chip according to a fifth embodiment of the present invention.
- the integrated circuit multi-chip package structure includes a first chip 210, a second chip 220, and a substrate 100.
- the bottom surface of the first chip 210 is provided with first pins 211a, 211b.
- the top surface of the second chip 220 is provided with a second pin.
- the first pins 211a, 211b include, but are not limited to, a connection portion drawn inside the first chip 210, and an extension pin electrically connected to the connection portion, as long as the first pin 211a, 211b can be electrically connected to the first chip 210;
- the second pin is identical to the second chip 220.
- the circuit layers 110a and 110b are provided with circuit pins.
- the circuit pins may be connection portions directly led out by the circuit layers 110a and 110b, or may be extension pins electrically connected to the connection portions, as long as the circuit pins can be connected to the circuit layer 110a. , 110b electrical connection can be.
- the top surface and the bottom surface of the substrate 100 are respectively provided with circuit layers 110a and 110b.
- the first chip 210 is disposed on the top surface of the substrate 100
- the second chip 220 is disposed on the top surface of the first chip 210
- the circuit layers 110a and 110b are provided with circuits.
- connection vias 120a, 120b the connection vias 120a, 120b are docked with the circuit pins
- the first openings of the connection vias 120a, 120b are docked with the first pins 211a, 211b
- the connection vias 120a The second opening of the 120b is an operation window
- the conductive vias 120a, 120b are provided with conductive layers 400a, 400b.
- the conductive layers 400a, 400b electrically connect the first pins 211a, 211b and the circuit pins; the second pin and The circuit layers 110a, 110b are electrically connected by conductive leads 500a, 500b.
- the top and bottom surfaces of the substrate 100 are respectively provided with circuit layers 110a and 110b.
- the circuit board 110a, 110b is provided on the top surface, the bottom surface of the substrate 100, or one or more of the substrates 100, and the first pins 211a, 211b are at least connected to one of the circuit layers 110a, The 110b is electrically connected, and the second pin is electrically connected to at least one of the circuit layers 110a, 110b.
- connection vias 120a, 120b are in abutment with the first pins 211a, 211b, and the first pins 211a, 211b are at least partially located near the first openings of the connection vias 120a, 120b or deep into the vias 120a, 120b.
- the conductive layers 400a, 400b may be electrically connected to the first pins 211a, 211b; the circuit pins and the connection vias 120a, 120b are butted, and the circuit pins are at least partially located near the first opening of the connection vias 120a, 120b, or The vicinity of the two openings, or the vicinity of the inner walls of the connection vias 120a, 120b, allows the conductive layers 400a, 400b to be electrically connected to the circuit pins.
- the first chip 210 is disposed on the top surface of the substrate 100, and the second chip 220 is disposed on the top surface of the first chip 210.
- the two chips are stacked, and the first pins 211a and 211b are located on the bottom surface of the first chip 210.
- the conductive layers 400a, 400b are electrically connected to the circuit pins of the circuit layers 110a, 110b on the substrate 100, the second pins are located on the top surface of the second chip 220, and are electrically connected to the circuit pins through the conductive leads 500a, 500b, and the second
- the chip 220 does not block the electrical connection between the first pins 211a, 211b and the circuit pins, and provides sufficient space for the connection of the first chip 210 and the substrate 100; when the first chip 210 is placed on the top surface of the substrate 100,
- the first pins 211a, 211b are located between the first chip 210 and the substrate 100, and the connection vias 120a, 120b provide an operation space for forming the conductive layers 400a, 400b, so that the conductive layers 400a, 400b can simultaneously be connected to the circuit pins and
- a pin 211a, 211b is electrically connected to electrically connect the first pin 211a, 211b with the circuit pin to electrically connect the first chip 210
- the first chip 210 and the second chip 220 are electrically connected to the circuit layers 110a and 110b of the substrate 100 from the top surface and the bottom surface, respectively, and the connection points are increased, the transmission capability is enhanced, and the connection range of the chip can be expanded to realize more. Connecting, as many chips as possible are disposed on the substrate 100.
- the conventional electronic package uses metal wire bonding to realize electrical connection between the chip and the circuit layers 110a and 110b of the substrate 100, and the wires occupy the space because they need to avoid each other.
- the first chip 210 and the circuit layers 110a and 110b are electrically connected by opening the connection vias 120a and 120b on the substrate 100.
- the conductive layers 400a and 400b are disposed in the connection vias 120a and 120b. Occupy extra space, the overall volume can be small after packaging, especially for ultra-thin circuit boards can be kept thin and light The characteristics of the flexible circuit board, it can maintain its flexibility. Moreover, the overall thickness of the substrate 100 and the first chip 210 and the second chip 220 is reduced, and even no gap is required between the substrate 100 and the first chip 210 (in principle, no gap is reserved, but the substrate 100 can be Other materials are disposed between the first chips 210; the steps of heat welding are not required, especially for the ultra-thin circuit layers 110a and 110b and the flexible circuit board package, and the substrate 100 can be prevented from warping and performance at a high temperature.
- connection vias 120a, 120b may not require a high temperature heating step, and is very helpful for the use of the ultra-thin chip package (the first chip 210, the second chip 220 may be an ultra-thin chip) and a flexible circuit board, because It is possible to avoid damage to the mechanism and performance of ultra-thin chips and flexible circuit boards by various thermo-mechanical stress distributions during high-temperature thermal cycling.
- An adhesive film 300 is disposed between the first chip 210 and the substrate 100.
- the adhesive film 300 bonds the first chip 210 to the substrate 100.
- the adhesive film 300 is provided with additional through holes, and the additional through holes and the connecting through holes 120a and 120b.
- the first openings are in communication, and the conductive layers 400a, 400b extend into the additional vias to be electrically connected to the first pins 211a, 211b.
- the first chip 210 is adhered to the substrate 100 by the adhesive film 300, and the first chip 210 is fixed to the substrate 100 during the process of placing the first chip 210 on the substrate 100, which is high in efficiency, facilitates batch operation, and is attached.
- the film 300 is provided with additional via holes that do not affect the electrical connection of the conductive layers 400a, 400b with the first leads 211a, 211b.
- the adhesive film 300 may be provided with an adhesive-free region in advance to ensure that the first pins 211a and 211b are not covered during the bonding process, and the adhesive-free regions automatically form additional through holes.
- the legs 211a and 211b are directly connected to the through holes 120a and 120b, and the conductive layers 400a and 400b may be directly connected to the first pins 211a and 211b.
- the adhesive film may be attached. Additional through holes are provided on the 300.
- the integrated circuit multi-chip package structure further includes an encapsulation layer 800.
- the first chip 210 and the second chip 220 are located between the encapsulation layer 800 and the associated substrate 100, and the encapsulation layer 800 is to be replaced by the first chip 210.
- the two chips 220 are packaged on the top surface of the substrate 100.
- the encapsulation layer 800 can protect the first chip 210 and the second chip 220 from the external environment, such as being damaged.
- the first chip 210 and the second chip 220 can also be fixed on the substrate 100 through the encapsulation layer 800.
- the second chip 220 of the first chip 210 is simultaneously fixed on the substrate 100, which has high production efficiency and ensures the stability of the circuit connection.
- the first chip 210 and the second chip 220 may be fixedly mounted on the substrate 100, but the first chip 210 and the second chip 220 may also be connected to the through holes 120a, 120b,
- the conductive layers 400a and 400b are fixed to the substrate 100; or the first chip 210 and the second chip 220 are fixed to the substrate 100 by the adhesive film 300; or are fixed to the substrate 100 by other means (including but not limited to bolts, pins, cards buckle).
- the top surface of the substrate 100 is further provided with a reinforcing strip 810 and an encapsulation layer 800 , and the encapsulation layer 800 encapsulates the chip and the reinforcing strip 810 on the top surface of the substrate 100 .
- the encapsulation layer includes a filling layer and a shell layer, and the first chip, the second chip, and the reinforcing strip 810 are located between the outer shell layer 820 and the substrate 100, and the reinforcing strip 810 surrounds or partially surrounds the periphery of the chip, and the reinforcing strip ends at a position
- the substrate, the other end abuts against the outer casing layer or does not abut any structure, and the filling layer is filled between the substrate and the outer casing layer.
- a relatively stable space is formed between the substrate 100, the reinforcing strip 810 and the outer shell layer 820.
- the chip is mounted in the space, and the outer shell layer provides support for the chip to avoid reducing the integrated circuit multi-chip during the packaging manufacturing process and in the subsequent use process.
- the chipset composed of the first chip 210 and the second chip 220 may be disposed in multiple places, and a single reinforcing strip 810 may be matched for a separate chip set, or one reinforcing strip 810 may be disposed for two or more chipsets.
- the chip provides more protection.
- the substrate 100 includes at least two substrates 101, at least two substrates 101 are stacked, and at least two of the sheets 101 are provided with circuit layers 110a, 110b, 110c, at least A substrate 101 is provided with vias 600 through which electrically conductive material electrically connects at least two circuit layers 110a, 110b. Two or more substrates 101 are stacked, and a multilayer circuit is provided to expand the electronic function.
- the substrate 100 may be a rigid circuit board, or the substrate 100 is a flexible circuit board, or the substrate 100 includes at least two layers of flexible circuit boards.
- the substrate 100, the encapsulation layer 800, the first chip 210, and the second chip 220 constitute a whole body having a small thickness and a small volume, and thus, such a bendable flexibility can be maintained when a flexible circuit board is fabricated.
- the integrated circuit multi-chip package packaging method comprises a pre-punch method and a post-punch method:
- the pre-punching method includes: a first pin 211a, 211b is disposed on a bottom surface of the first chip 210, and a second pin is disposed on a top surface of the second chip 220, and the second chip 220 is disposed.
- the first chip 210 is disposed on the top surface of the first chip 210.
- the first chip 210 is provided with an adhesive film 300 on one side of the substrate 100, and the adhesive film 300 is pasted on the substrate 100.
- the top surface of the substrate 100 is provided with a circuit.
- the layers 110a, 110b, or/and the bottom surface of the substrate 100 are provided with circuit layers 110a, 110b, or/and the circuit layers 110a, 110b are provided in the substrate 100, the circuit layers 110a, 110b are provided with circuit pins, and the substrate 100 is provided with a connection
- the through holes 120a, 120b, the circuit pins abut the connection vias 120a, 120b; the bottom surface of the first chip 210 faces the substrate 100, and the first openings of the connection vias 120a, 120b are docked with the first pins 211a, 211b,
- An additional via hole is formed on the adhesive film 300, and the conductive layers 400a and 400b are formed in the connection via holes 120a and 120b through the second openings connecting the via holes 120a and 120b.
- the conductive layers 400a and 400b penetrate into the additional via holes to be the first lead.
- the legs 211a, 211b and the circuit pins are electrically connected; the second pin and the circuit layer 11 are passed through the conductive leads 500a, 500b 0a, 110b are electrically connected.
- the first pin 211a, 211b and the circuit layers 110a, 110b may be electrically connected first, and then the second pin may be connected to the circuit layers 110a, 110b, or the second pin and the circuit layer 110a may be first connected.
- the first pins 211a, 211b are connected to the circuit layers 110a, 110b.
- the substrate 100 is provided with more than one circuit layer 110a, 110b.
- the first pins 211a, 211b are electrically connected to at least one of the circuit layers 110a, 110b, and the second pin is electrically connected to at least one of the circuit layers 110a, 110b. .
- connection vias 120a and 120b are formed in advance on the substrate 100, and after the first chip 210 is placed on the substrate 100, the conductive layers 400a and 400b are formed.
- the first pins 211a and 211b are butted to the first openings of the connection vias 120a and 120b, and are not necessarily strictly aligned as long as the first pins 211a and 211b and the conductive layer can be connected through the connection vias 120a and 120b. 400a, 400b can be electrically connected.
- the conductive bonding material may be from the connecting vias 120a, 120b during the process of forming the conductive layers 400a, 400b in the connecting vias 120a, 120b through the second openings of the connecting vias 120a, 120b.
- the second opening is fed into the connecting through holes 120a, 120b, and the conductive bonding material is adhered to the inner wall of the connecting through holes 120a, 120b and the device pins to form the conductive layer 400a, 400b.
- the holes 120a, 120b and the inner walls of the first pins 211a, 211b are electrically connected to each other to form a mechanical and electrical connection after heat treatment or chemical treatment to obtain stable conductive connection properties.
- the conductive bonding material is a solder ball, or a solder paste, or a conductive paste, or a conductive metal paste, and one or more combinations may be selected according to the needs of the process or the material of the substrate 100 and the properties of the inner walls of the connecting vias 120a and 120b. .
- the conductive bonding material may also be provided in the connection vias 120a, 120b by screen printing. Screen printing is a common manufacturing method of the circuit layers 110a and 110b.
- the conductive layers 400a and 400b are formed by screen printing.
- the device is universal and can be synchronized with the fabrication of the circuit layers 110a and 110b, which saves the process flow and further reduces the cost.
- the structure of the conductive layers 400a, 400b finally obtained using a conductive bonding material.
- the conductive layers 400a and 400b may be formed by electroplating in the process of forming the conductive layers 400a and 400b in the connection vias 120a and 120b through the second openings of the connection vias 120a and 120b. Good electrical conductivity can be obtained, and plating can control the thickness of the conductive layers 400a, 400b to obtain desired electrical conductivity. Referring to Figures 5, 7, 8, and 10, the structures of the conductive layers 400a, 400b finally obtained using a conductive bonding material are shown.
- the post-punching method includes: a first pin 211a, 211b is disposed on a bottom surface of the first chip 210, a second pin is disposed on a top surface of the second chip 220, and the second chip 220 is disposed on the first chip 210.
- the top surface of the first chip 210 is disposed on the substrate 100, the bottom surface of the first chip 210 faces the substrate 100, the top surface of the substrate 100 is provided with circuit layers 110a, 110b, or/and the bottom surface of the substrate 100 is provided with a circuit layer 110a, 110b, or / and the substrate 100 are provided with circuit layers 110a, 110b, the circuit layers 110a, 110b are provided with circuit pins; the first pins 211a, 211b are electrically connected to at least one of the circuit layers 110a, 110b, at the substrate 100
- the connection vias 120a, 120b are formed such that the first openings of the connection vias 120a, 120b are mated with the first pins 211a, 211b, and the circuit pins are docked with the connection vias 120a, 120b, through the connection vias 120a, 120b
- the second opening is formed in the connection vias 120a, 120b to form the conductive layers 400a, 400b, such that the conductive layers 400a, 400b
- the circuit layers 110a and 110b are generally prepared in advance on the substrate 100, but in addition, the circuit layers 110a and 110b may be formed on the substrate 100 when the via conductive layers 400a and 400b are formed.
- a mold release layer is provided on the bottom surface of the substrate 100, and the mold release layer has a circuit layer 110a.
- the 110b-like contoured groove forms the circuit layers 110a and 110b in the mold groove while the conductive layers 400a and 400b are formed after the connection vias 120a and 120b are formed.
- a conductive layer is also plated in the mold groove and the surface of the release layer, and then the release layer and the conductive layer on the surface thereof are removed, and the substrate surface can be formed.
- the process of forming the conductive layers 400a, 400b by electroplating further includes forming an auxiliary layer by a sputtering or evaporation process before electroplating, and then electroplating.
- the sputtered or evaporated auxiliary layer is better electrically connected to the circuit leads, and the plated conductive layers 400a, 400b are attached to the auxiliary layer.
- Sputtering or vapor deposition of the auxiliary layer on the one hand can improve the quality of the plating, and on the other hand, can better achieve the electrical connection between the conductive layers 400a, 400b and the circuit pins. In this way, one process simultaneously accomplishes two tasks, improving production efficiency and reducing costs.
- connection vias 120a and 120b may be formed in advance on the substrate 100 as needed, or the connection vias 120a and 120b may be formed on the substrate 100 after the first chip 210 is placed.
- the first chip 210 and the second chip 220 may be fixed, and the chip set is placed on the substrate 100, and the first chip 210 is electrically connected to the circuit layers 110a and 110b.
- the first chip 210 may be placed on the substrate 100.
- the second chip 220 is placed on the top surface of the first chip 210.
- the second chip 220 is at least two (only two are shown), and at least two second chips 220 are stacked, and the second chip of the top two of the adjacent two second chips 220 220 is mounted on the top surface of the second chip 220 of the bottom layer, and the second chip 220 of the top layer is offset from the second pin on the second chip 220 of the bottom layer.
- the top surface of the first chip 210 may be provided with at least two second chips 220 to achieve more electronic functions.
- the top surface of the topmost second chip 220 is provided with a heat sink 700.
- the heat sink 700 is disposed to help dissipate heat to the chip. Avoid high temperatures affecting the performance of the chip.
- An encapsulation layer 800 is further provided.
- the first chip 210, the second chip 220, the conductive leads 500a and 500b, and the heat dissipation device 700 are located between the encapsulation layer 800 and the substrate 100.
- the encapsulation layer 800 is to be the first chip 210 and the second chip 220.
- the conductive leads 500a, 500b and the heat sink 700 are packaged on the top surface of the substrate 100.
- the substrate 100, the encapsulation layer 800, the first chip 210, and the second chip 220 constitute a package subsystem 900.
- the two package subsystems 900 are stacked, and the substrate 100 of the top package subsystem 900 is disposed on the bottom package.
- the top surface of the encapsulation layer 800 of the system 900, the encapsulation layer 800 of the underlying package subsystem 900 is provided with vias 801, conductors are provided in the vias 801, and conductors within the vias 801 will be the top layer of the package layer 900 of the package subsystem 900a
- the circuit layers 110a, 110b of the package subsystem 900 are electrically connected to the bottom layer 110b.
- the circuit functions are expanded by laminating and interconnecting two or more package subsystems 900.
- the first chip 210 is connected to the circuit layers 110a, 110b of the substrate 100 by connecting the via holes 120a, 120b, so that the package subsystem 900 itself has a small thickness and a small volume. Under the same volume and thickness requirements, more layers of the package subsystem 900 can be provided, which greatly expands the circuit function.
- the substrate 100 is provided with at least two circuit layers 110a, 110b, the top surface of the substrate 100 is provided with circuit layers 110a, 110b, or / and the bottom surface of the substrate 100 is provided with circuit layers 110a, 110b, or / and the circuit is provided in the substrate 100
- the layers 110a, 110b have at least two first pins 211a, 211b, wherein one of the first pins 211a, 211b is electrically connected to at least one of the circuit layers 110a, 110b, and the other first pin 211a, 211b is at least The other circuit layers 110a, 110b are electrically connected.
- the first chip 210 is simultaneously connected to the circuit layers 110a and 110b of two or more layers, the communication port is increased, the transmission capability is enhanced, and the circuit function is expanded.
- a protective layer is provided on the inner wall of the connecting through holes 120a, 120b for protecting the substrate 100 when the additional through holes are formed.
- the additional via holes may be formed by using, but not limited to, a chemical etching or a drilling process. In this case, it is necessary to pass through the connection via holes 120a, 120b, which may damage the inner walls of the connection via holes 120a, 120b, and thus the substrate. 100, the circuit layers 110a, 110b cause damage, and the protective layer can protect the inner walls of the connecting through holes 120a, 120b from damage.
- the protective layer may be a material that facilitates electrical connection of the conductive layers 400a, 400b, in which case the protective layer may be in contact with the circuit pins to facilitate electrical connection of the circuit pins to the conductive layers 400a, 400b.
- the packaging steps are as shown in FIGS. 10 to 13. First, as shown in FIGS. 11 and 12, the adhesive film 300 affixes the first chip 210 to the substrate 100; as shown in FIG. 13, an additional via hole is formed on the adhesive film 300. As shown in FIG. 14, conductive layers 400a, 400b are formed in the connection vias 120a, 120b.
- the inner walls of the connecting through holes 120a, 120b are provided with a protective layer, which is also the auxiliary layers 121a, 121b, and the protective layers (the auxiliary layers 121a, 121b) are not shown in the drawings, with reference to Figs.
- the protective layers are made of the same material as the circuit layers 110a and 110b.
- the circuit layers 110a and 110b are made of copper
- the protective layers are made of copper. Refers to electrical connection performance.
- the protective layer providing the protection or the auxiliary layers 121a and 121b for the auxiliary electrical connection may be separately provided.
- the protective layers are electrically connected to the circuit layers 110a, 110b, and the conductive layers 400a, 400b electrically connect the device pins and the circuit pins.
- the protective layer (the auxiliary layer 121a, 121b) is directly electrically connected to the circuit pin, has good electrical connection effect, and can extend the circuit pins, reduce the volume of the conductive layers 400a, 400b, and facilitate the fabrication of the conductive layers 400a, 400b, and is also advantageous for the fabrication of the conductive layers 400a, 400b. cut costs.
- the conductive layers 400a and 400b may be formed by electroplating, and the auxiliary layers 121a and 121b may be formed by sputtering or vapor deposition before plating.
- the sputtered or vapor-deposited auxiliary layers 121a, 121b can be better electrically connected to the circuit leads, and the electroplated conductive layers 400a, 400b are attached to the auxiliary layers 121a, 121b, which can be better plated on the one hand and assisted on the other hand.
- Layers 121a, 121b The conductive layers 400a, 400b can be better electrically connected to the circuit pins.
- sputtering, vapor deposition, and electroplating can simultaneously perform all components on the substrate 100 to improve efficiency.
- the circuit layers 110a and 110b are formed on the substrate 100 in advance, but the circuit layers 110a and 110b may be formed on the substrate 100 during the integrated circuit package.
- the circuit layers 110a and 110b may be formed on the substrate 100.
- the mold layer, the mold release layer has a mold groove similar in profile to the circuit layers 110a, 110b, and after the connection via holes 120a, 120b are formed, the circuit layers 110a, 110b are formed in the mold groove while the conductive layers 400a, 400b are formed, for example
- the conductive layer 400a, 400b is formed by electroplating, and a conductive material is also plated in the mold groove and the surface of the release layer, and then the release layer and the conductive material on the surface thereof are removed, thereby forming the substrate surface circuit layer 110a. 110b.
- top and bottom orientations in the above embodiments are referred to the orientations shown in the drawings, but only for the sake of clarity and conciseness, and the orientation created by the present invention cannot be limited thereto.
- the integrated circuit multi-chip laminated package structure can be rotated to any angle.
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Abstract
本发明涉及提供一种集成电路多芯片层叠封装结构以及方法,其中,集成电路多芯片层叠封装结构包括:第一芯片的底面设有第一引脚;第二芯片的顶面设有第二引脚;基板的顶面设有电路层、或/和基板的底面设有电路层、或/和基板内设有电路层;第一芯片设于基板的顶面,第二芯片设于第一芯片的顶面;第一引脚至少与其中一个电路层电连接:电路层设有电路引脚,基板设有连接通孔,连接通孔与电路引脚对接,连接通孔的第一开口与第一引脚对接,连接通孔的第二开口为操作窗口,连接通孔内设有导电层,导电层将第一引脚和电路引脚电连接;第二引脚至少与其中一个电路层电连接:第二引脚与电路层通过导电引线电连接。芯片与电路层连接的密度高,体积小。
Description
本发明属于电子领域,具体涉及一种集成电路多芯片层叠封装结构以及方法。
传统集成电路多芯片层叠的封装方法,经常采用引线键合的方式将各芯片上电路与基板上的电路连接,由于引线占用大量空间,最终形成的集成电路封装整体体积庞大,并且引线之间需要相互避让,进一步降低了可以布线的引线数量,空间利用率低,导致芯片与***电路的连线数量少,制约了数据通讯端口的密度和总量,限制了电路功能的扩展。而且引线键合是逐个引线顺次键合,封装效率低,又需使用昂贵的金线或复杂成分的铜线,制作成本高。
发明内容
基于此,本发明在于克服现有技术的缺陷,提供一种集成电路多芯片层叠封装结构以及方法,芯片与电路层连接的密度高,体积小、生产成本低。
其技术方案如下:
一种集成电路多芯片层叠封装结构,包括:第一芯片,所述第一芯片的底面设有第一引脚;第二芯片,所述第二芯片的顶面设有第二引脚;基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层;其中,所述第一芯片设于基板的顶面,所述第二芯片设于所述第一芯片的顶面;所述第一引脚至少与其中一个所述电路层电连接:所述电路层设有电路引脚,所述基板设有连接通孔,所述连接通孔与所述电路引脚对接,所述连接通孔的第一开口与所述第一引脚对接,所述连接通孔的第二开口为操作窗口,所述连接通孔内设有导电层,所述导电层将所述第一引脚和所述电路引脚电连接;所述第二引脚至少与其中一个所述电路层电连接:所述第二引脚
与所述电路层通过导电引线电连接。
在其中一个实施例中,所述第二芯片为至少两个,至少两个所述第二芯片层叠设置,相邻的两个所述第二芯片中,顶层的所述第二芯片安装于底层的所述第二芯片的顶面,并且顶层的所述第二芯片与底层的所述第二芯片上的所述第二引脚错开。
在其中一个实施例中,最顶层的所述第二芯片的顶面设有散热装置。
在其中一个实施例中,所述第一芯片和所述基板之间设有粘装膜,所述粘装膜将所述第一芯片粘贴于所述基板,所述粘装膜设有附加通孔,所述附加通孔与所述连接通孔的第一开口相连通,所述导电层伸入所述附加通孔与所述第一引脚电连接。
在其中一个实施例中,集成电路多芯片层叠封装结构还包括封装层,所述第一芯片、所述第二芯片位于所述封装层与所属基板之间,所述封装层将所述被第一芯片、所述第二芯片封装于所述基板的顶面。
在其中一个实施例中,所述基板的顶面还设有加固条,所述加固条环绕或部分环绕于所述芯片周围。
在其中一个实施例中,所述基板的顶面还设有封装层,所述封装层包括填充层和外壳层,所述填充层、所述加固条、所述第一芯片、以及所述第二芯片位于所述外壳层和所述基板之间,所述加固条的一端抵靠所述基板、另一端抵靠所述外壳层,所述填充层填充于所述外壳层和所述基板之间。
在其中一个实施例中,所述基板包括至少两个基片,至少两个所述基片层叠设置,所述基片设有所述电路层,至少一个所述基片设有过孔,导电材料穿过所述过孔将至少两个所述电路层电连接。
在其中一个实施例中,所述基板、所述封装层、所述第一芯片和所述第二芯片构成封装子***,两个所述封装子***层叠设置,顶层所述封装子***的基板设于底层所述封装子***的封装层的顶面,底层所述封装子***的封装层设有穿孔,所述穿孔内设有导体,所述穿孔内的导体与顶层所述封装子***的连接通孔内的所述导电层电连接、并且所述穿孔内的导体与底层所述封装子系
统的电路层电连接。
在其中一个实施例中,所述基板设有至少两层所述电路层,所述基板的顶面设有所述电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述第一引脚为至少两个,其中一个所述第一引脚至少与其中一个所述电路层电连接、另一个所述第一引脚至少与余下另一个所述电路层电连接。
在其中一个实施例中,所述基板为柔性电路板、或所述基板包括至少两层层叠设置的柔性电路板。
一种集成电路多芯片层叠封装方法,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚,所述基板设有连接通孔,所述电路引脚与所述连接通孔对接;将所述第一引脚至少与其中一个所述电路层电连接,将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,使所述连接通孔的第一开口与所述第一引脚对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,所述导电层将所述第一引脚和所述电路引脚电连接;将所述第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
一种集成电路多芯片层叠封装方法,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚;将所述第一引脚至少与其中一个所述电路层电连接,在所述基板上制作连接通孔,使所述连接通孔的第一开口与所述第一引脚对接、并且所述电路引脚与所述连接通孔对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,使所述导电层将所述第一引脚和所述电路引脚电连接;所述第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
本发明的有益效果在于:
1、集成电路多芯片层叠封装结构包括:第一芯片,所述第一芯片的底面设有第一引脚;第二芯片,所述第二芯片的顶面设有第二引脚;基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层;其中,所述第一芯片设于基板的顶面,所述第二芯片设于所述第一芯片的顶面;所述第一引脚至少与其中一个所述电路层电连接,所述电路层设有电路引脚,所述基板设有连接通孔,所述连接通孔与所述电路引脚对接,所述连接通孔的第一开口与所述第一引脚对接,所述连接通孔的第二开口为操作窗口,所述连接通孔内设有导电层,所述导电层将所述第一引脚和所述电路引脚电连接;所述第二引脚至少与其中一个所述电路层电连接,所述第二引脚与所述电路层通过导电引线电连接。
其中,所述第一芯片设于基板的顶面,所述第二芯片设于所述第一芯片的顶面;两个芯片层叠设置,第一引脚位于第一芯片的底面,通过导电层与基板上的电路层的电路引脚电连接,第二引脚位于第二芯片的顶面,通过导电引线与基板上的电路层的电路引脚电连接。分别通过第一芯片的下方、第二芯片的上方空间进行电路连接,第二芯片不会阻挡第一引脚与电路引脚的电连接,第一芯片也不会阻挡第二引脚与电路引脚的电连接,这样就为第一芯片、第二芯片与基板的连接提供了充分的空间;当第一芯片安放于基板的顶面时,第一引脚位于第一芯片与基板之间,连接通孔为制作导电层提供了操作空间,使得导电层能够同时与电路引脚和第一引脚电连接,从而将第一引脚与电路引脚电连接,实现第一芯片与基板电路层的电连接。第一芯片、第二芯片构成分别从顶面、底面两个方向与基板的电路层电连接,连接点增加,传输能力增强,可以扩展芯片的连接范围,实现更多的连接,尽量多的在基板上设置芯片,另一方面,传统的电子封装采用导线实现芯片与基板电路层的电连接,而导线占用巨大空间,本发明通过在基板上开设连接通孔的方式实现第一芯片与电路层的电连接,导电层设于连接通孔内,不占用额外空间,可以缩小封装后整体的体积。
并且,降低基板和第一芯片、第二芯片的整体厚度,甚至基板和第一芯片
之间不需要预留间隙(原则上无需预留间隙,但是根据需要可以在基板与第一芯片之间设置其他材料);导电通孔的制作可以不需要进行高温加热的步骤,对超薄芯片、柔性电路板的使用很有帮助,因为本发明的方法可以避免高温热循环时各种热机械应力分布对超薄芯片和柔性电路板的机构和性能的损伤。
(所述“顶”、“底”方位参照附图所示的方位,但仅是为了表述清楚简洁,不能以此限定本发明创造的方位,集成电路多芯片层叠封装结构可以旋转为任意角度)
2、所述第二芯片为至少两个,至少两个所述第二芯片层叠设置,相邻的两个所述第二芯片中,顶层的所述第二芯片安装于底层的所述第二芯片的顶面,并且顶层的所述第二芯片与底层的所述第二芯片上的所述第二引脚错开。第一芯片的顶面可以设置至少两个第二芯片,实现更多的电子功能。
3、最顶层的所述第二芯片的顶面设有散热装置。散热是芯片层叠封装的一个主要问题,多芯片层叠,增加电子功能的密度,也同时增加了单位面积的能耗,而没有增加散热的面积。在第二芯片顶部设置散热装置,至少为芯片能耗或运算中产生的热量提供了顶部散热的途径,有助于克服芯片散热的技术瓶颈,避免高温影响芯片的工作性能。
4、所述第一芯片和所述基板之间设有粘装膜,所述粘装膜将所述第一芯片粘贴于所述基板,所述粘装膜设有附加通孔,所述附加通孔与所述连接通孔的第一开口相连通,所述导电层伸入所述附加通孔与所述第一引脚电连接。通过粘装膜将第一芯片粘贴于基板,在将第一芯片安放于基板的过程中就实现了第一芯片固定于基板,效率高,利于批量操作,并且粘装膜设有附加通孔,不影响导电层与第一引脚电连接。可以是,粘装膜本身可以预先设有无粘附剂的区域,在安放时不会覆盖第一引脚,直接在无粘附剂的区域构成所述附加通孔,第一引脚直通连接通孔,导电层可以直接与第一引脚电连接;也可以是,在将第一芯片粘贴于基板后,在粘装膜中开设附加通孔。
5、所述集成电路封装结构还包括封装层,所述第一芯片、所述第二芯片位于所述封装层与所属基板之间,所述封装层将所述被第一芯片、所述第二芯
片封装于所述基板的顶面。封装层可以保护第一芯片、第二芯片不受损伤,免受外部环境因素的影响。也可以通过封装层将第一芯片和第二芯片固定于基板上,其芯片和引脚的相对位置固定,有助于形成稳定的电路连接,也可通过调整封装层的材料特性,来改善热机械应力的分布,提高整个***的热机械可靠性,并且在基板上设置好封装层就同时将第一芯片第二芯片固定于基板,生产效率高。
6、所述基板的顶面还设有加固条,所述加固条环绕或部分环绕于所述芯片周围。加固条在基板上凸起的高度与芯片的高度相当,加固条为芯片提供保护,避免芯片受挤压、发生位移、被弯折。第一芯片和第二芯片组成一个芯片组,芯片组可以多个。可以是,加固条环绕或部分环绕一个芯片组;也可以是加固条环绕或部分环绕两个以上芯片组;还可以是,多个加固条环绕会部分环绕一个或两个以上的芯片组。这种设计,特别有助于超薄芯片或者柔性电路板的封装,在保持***轻薄和柔性性能的同时,也为***整体提供更好的机械保护。根据需要,加固条可以是连续的带状,也可以是有间续的、带有缺口的带状。
进一步的,所述基板的顶面还设有封装层,所述封装层包括填充层和外壳层,所述填充层、所述加固条、所述第一芯片、以及所述第二芯片位于所述外壳层和所述基板之间,所述加固条一端抵靠所述基板、另一端抵靠所述外壳层,所述填充层填充于所述基板与所述外壳层之间。基板、加固条、外壳层之间构成一个相对稳定的空间,芯片安装于此空间内,外壳层、加固条、填充层为芯片提供支撑,避免芯片在封装的工艺过程中或者在使用中被挤压、发生位移、被弯折。
7、所述基板包括至少两个基片,至少两个所述基片层叠设置,所述基片设有所述电路层,至少一个所述基片设有过孔,导电材料穿过所述过孔将至少两个所述电路层电连接。两个以上的基片层叠设置,设置多层电路,扩展电子功能。
8、所述基板、所述封装层、所述第一芯片和所述第二芯片构成封装子系
统,两个所述封装子***层叠设置,顶层所述封装子***的基板设于底层所述封装子***的封装层的顶面,底层所述封装子***的封装层设有穿孔,所述穿孔内设有导体,所述穿孔内的导体与顶层所述封装子***的连接通孔内的所述导电层电连接、并且所述穿孔内的导体与底层所述封装子***的电路层电连接。将两层以上的封装子***层叠并相互连接,增加通讯端口数量,提高数据传输速度和带宽,扩展了电路功能。封装子***中,采用连接通孔的方式将第一芯片与基板的电路层连接,使得封装子***本身的厚度小、体积小,因此。在相同体积、厚度要求下,可以设置更多层的封装子***,大幅扩展了电路功能。
9、所述基板设有至少两层所述电路层,所述基板的顶面设有所述电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述第一引脚为至少两个,其中一个所述第一引脚至少与其中一个所述电路层电连接、另一个所述第一引脚至少与余下另一个所述电路层电连接。第一芯片同时与两层以上的电路层连接,数据通讯端口增加,数据传输能力增强,扩展电路功能。
10、所述基板为柔性电路板、或所述基板包括至少两层层叠设置的柔性电路板。所述基板、所述封装层、所述第一芯片和所述第二芯片构成的整体本身的厚度小、体积小,因此,当使用柔性电路板时,可以让整个***保持这种可弯曲的柔性,以运用于可穿戴***。
11、一种集成电路多芯片层叠封装方法,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚,所述基板设有连接通孔,所述电路引脚与所述连接通孔对接;将所述第一引脚至少与其中一个所述电路层电连接,将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,使所述连接通孔的第一开口与所述第一引脚对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,所述导电层将所述第一引脚和所述电路引脚电连接;将所述第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
在基板上预先制作好连接通孔,待将第一芯片安放于基板上后,再制作导电层。其中,第一引脚与连接通孔的第一开口对接,不一定是严格对正,只要满足可以通过连接通孔将第一引脚与导电层电连接即可。
12、一种集成电路多芯片层叠封装方法,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚;将所述第一引脚至少与其中一个所述电路层电连接,在所述基板上制作连接通孔,使所述连接通孔的第一开口与所述第一引脚对接、并且所述电路引脚与所述连接通孔对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,使所述导电层将所述第一引脚和所述电路引脚电连接;所述第二芯片的第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
图1为本发明实施例一集成电路多芯片层叠封装方法示意图一;
图2为本发明实施例一集成电路多芯片层叠封装方法示意图二;
图3为本发明实施例一集成电路多芯片层叠封装方法示意图三;
图4为本发明实施例一集成电路多芯片层叠封装方法示意图四;
图5为本发明实施例一集成电路多芯片层叠封装方法示意图五;
图6为本发明实施例一集成电路多芯片层叠封装方法示意图六;
图7为本发明实施例一集成电路多芯片层叠封装方法示意图七;
图8为本发明实施例二集成电路多芯片层叠封装方法示意图一;
图9为本发明实施例二集成电路多芯片层叠封装方法示意图二;
图10为本发明实施例三集成电路多芯片层叠封装方法示意图;
图11为本发明实施例五集成电路多芯片层叠封装方法示意图一;
图12为本发明实施例五集成电路多芯片层叠封装方法示意图二;
图13为本发明实施例五集成电路多芯片层叠封装方法示意图三;
图14为本发明实施例五集成电路多芯片层叠封装方法示意图四。
附图标记说明:
100、基板,101、基片,110a、110b、110c、电路层,120a、120b、连接通孔,121a、121b、辅助层,210、第一芯片,211a、211b、第一引脚,220、第二芯片,300、粘装膜,400a、400b、导电层,500a、500b、导电引线,600、过孔,700、散热装置,800、封装层,801、穿孔,810、加固条,820、外壳层,830、填充层,900、封装子***。
下面对本发明作进一步详细说明,但本发明的实施方式不限于此。
实施例一
如图1至5所示,集成电路多芯片层叠封装结构包括:第一芯片210、第二芯片220、以及基板100,第一芯片210的底面设有第一引脚211a、211b。第二芯片220的顶面设有第二引脚。第一引脚211a、211b包括但不限于第一芯片210内部引出的连接部、与连接部电连接的扩展脚,只要通过第一引脚211a、211b能够和第一芯片210电连接均可;第二引脚与第二芯片220同理。电路层110a、110b设有电路引脚,电路引脚可以是电路层110a、110b直接引出的连接部,也可以是和连接部电连接的扩展引脚,只要通过电路引脚能够和电路层110a、110b电连接均可。基板100的顶面和底面分别设有电路层110a、110b,第一芯片210设于基板100的顶面,第二芯片220设于第一芯片210的顶面;电路层110a、110b设有电路引脚,基板100设有连接通孔120a、120b,连接通孔120a、120b与电路引脚对接,连接通孔120a、120b的第一开口与第一引脚211a、211b对接,连接通孔120a、120b的第二开口为操作窗口,连接通孔120a、120b内设有导电层400a、400b,导电层400a、400b将第一引脚211a、211b和电路引脚电连接;第二引脚与电路层110a、110b通过导电引线500a、500b电连接。本实施例中,基板100的顶面和底面分别设有电路层110a、110b
但不限于此,可以是,基板100的顶面、底面、或基板100内的一处或者两处以上设有电路层110a、110b,第一引脚211a、211b至少与其中一个电路层110a、110b电连接,第二引脚至少与其中一个电路层110a、110b电连接。
其中,连接通孔120a、120b与第一引脚211a、211b对接,第一引脚211a、211b至少部分位于连接通孔120a、120b的第一开口附近、或深入连接通孔120a、120b内,使得导电层400a、400b可以与第一引脚211a、211b电连接;电路引脚和连接通孔120a、120b对接,电路引脚至少部分位于连接通孔120a、120b的第一开口附近、或第二开口附近、或连接通孔120a、120b内壁的附近,使得导电层400a、400b可以与电路引脚电连接。
其中,第一芯片210设于基板100的顶面,第二芯片220设于第一芯片210的顶面;两个芯片层叠设置,第一引脚211a、211b位于第一芯片210的底面,通过导电层400a、400b与基板100上的电路层110a、110b的电路引脚电连接,第二引脚位于第二芯片220的顶面,通过导电引线500a、500b与电路引脚电连接,第二芯片220不会阻挡第一引脚211a、211b与电路引脚的电连接,为第一芯片210与基板100的连接提供了充分的空间;当第一芯片210安放于基板100的顶面时,第一引脚211a、211b位于第一芯片210与基板100之间,连接通孔120a、120b为制作导电层400a、400b提供了操作空间,使得导电层400a、400b能够同时与电路引脚和第一引脚211a、211b电连接,从而将第一引脚211a、211b与电路引脚电连接,实现第一芯片210与基板100电路层110a、110b的电连接。第一芯片210、第二芯片220构成分别从顶面、底面两个方向与基板100的电路层110a、110b电连接,连接点增加,传输能力增强,可以扩展芯片的连接范围,实现更多的连接,尽量多的在基板100上设置芯片,另一方面,传统的电子封装采用金属导线键合实现芯片与基板100电路层110a、110b的电连接,而因为需要互相避开,导线占会用巨大空间,本发明通过在基板100上开设连接通孔120a、120b的方式实现第一芯片210与电路层110a、110b的电连接,导电层400a、400b设于连接通孔120a、120b内,不占用额外空间,可以小封装后整体的体积,特别是,对于超薄电路板能很好的保持轻薄
的特性,对于柔性电路板,能很好保持其柔性。并且,降低基板100和第一芯片210、第二芯片220的整体厚度,甚至基板100和第一芯片210之间不需要预留间隙(原则上无需预留间隙,但是根据需要可以在基板100与第一芯片210之间设置其他材料);不需要进行加热焊接的步骤,特别是针对超薄电路层110a、110b、柔性电路板的封装,可以避免高温下基板100发生翘曲、降低性能。连接通孔120a、120b的制作可以不需要进行高温加热的步骤,对超薄芯片封装(第一芯片210、第二芯片220可以是超薄芯片)和柔性电路板的使用很有帮助,因为如此可以避免高温热循环时各种热机械应力分布对超薄芯片和柔性电路板的机构和性能的损伤。
第一芯片210和基板100之间设有粘装膜300,粘装膜300将第一芯片210粘贴于基板100,粘装膜300设有附加通孔,附加通孔与连接通孔120a、120b的第一开口相连通,导电层400a、400b伸入附加通孔与第一引脚211a、211b电连接。通过粘装膜300将第一芯片210粘贴于基板100,在将第一芯片210安放于基板100的过程中就实现了第一芯片210固定于基板100,效率高,利于批量操作,并且粘装膜300设有附加通孔,不影响导电层400a、400b与第一引脚211a、211b电连接。可以是,粘装膜300预先设有无粘贴剂的区域,以保证在粘装过程中不会覆盖第一引脚211a、211b,这些无粘贴剂的区域会自动构成附加通孔,第一引脚211a、211b直通连接通孔120a、120b,导电层400a、400b可以直接与第一引脚211a、211b电连接;也可以是,在将第一芯片210粘贴于基板100后,在粘装膜300上开设附加通孔。
集成电路多芯片层叠封装结构还包括封装层800,参照图7、9,第一芯片210、第二芯片220位于封装层800与所属基板100之间,封装层800将被第一芯片210、第二芯片220封装于基板100的顶面。封装层800可以保护第一芯片210、第二芯片220不受外界环境的不利影响,例如受到损伤;也可以通过封装层800将第一芯片210和第二芯片220固定于基板100上,在基板100上设置好封装层800就同时将第一芯片210第二芯片220固定于基板100,生产效率高,也保证了电路连接的稳定性。
根据需要,可以是,封装层800可以将第一芯片210、第二芯片220固定安装于基板100,但不限于此,第一芯片210、第二芯片220也可以通过连接通孔120a、120b、导电层400a、400b固定于基板100;或者,第一芯片210、第二芯片220通过粘装膜300固定于基板100;或者,通过其他方式固定于基板100(包括但不限于螺栓、销钉、卡扣)。
此外,如图6所示,基板100的顶面还设有加固条810和封装层800,封装层800将芯片和加固条810封装于基板100的顶面。封装层包括填充层和外壳层,第一芯片、第二芯片、以及加固条810位于外壳层820与基板100之间,加固条810环绕或部分环绕于芯片周围,所述加固条一端抵靠所述基板、另一端抵靠所述外壳层或不抵靠任何结构,所述填充层填充于所述基板与所述外壳层之间。基板100、加固条810、外壳层820之间构成一个相对稳定的空间,芯片安装于此空间内,外壳层为芯片提供支撑,避免在封装制作工艺中和以后的使用过程中降低集成电路多芯片层叠结构中的热机械应力强度。第一芯片210和第二芯片220组成的芯片组可以设置多处,可以为单独的芯片组配色单独的加固条810,也可以对两个以上芯片组配设一个加固条810。特别是对于用于制作封装超薄芯片、或使用超薄电路板或者柔性电路板,在保持轻薄、柔性性能的同时,为芯片提供更多的保护。
不限于此,也可以是,如图7所示,基板100包括至少两个基片101,至少两个基片101层叠设置,基至少两个片101设有电路层110a、110b、110c,至少一个基片101设有过孔600,导电材料穿过过孔600将至少两个电路层110a、110b电连接。两个以上的基片101层叠设置,设置多层电路,扩展电子功能。
本实施例中基板100可以是硬质电路板,或者,基板100为柔性电路板、或基板100包括至少两层层叠设置的柔性电路板。基板100、封装层800、第一芯片210和第二芯片220构成的整体本身的厚度小、体积小,因此,当制成柔性电路板时,可以保持这种可弯曲的柔性。
其中,集成电路多芯片层叠封装方法包括预打孔法和后打孔法:
A、预打孔法步骤,包括:如图1所示,第一芯片210的底面设有第一引脚211a、211b,第二芯片220的顶面设有第二引脚,第二芯片220设于第一芯片210的顶面;如图2所示,第一芯片210朝向基板100的一面设有粘装膜300,粘装膜300将粘贴于基板100,基板100的顶面设有电路层110a、110b、或/和基板100的底面设有电路层110a、110b、或/和基板100内设有电路层110a、110b,电路层110a、110b设有电路引脚,基板100设有连接通孔120a、120b,电路引脚与连接通孔120a、120b对接;第一芯片210的底面朝向基板100,使连接通孔120a、120b的第一开口与第一引脚211a、211b对接,在粘装膜300上制作附加通孔,通过连接通孔120a、120b的第二开口在连接通孔120a、120b内制作导电层400a、400b,导电层400a、400b深入附加通孔内将第一引脚211a、211b和电路引脚电连接;通过导电引线500a、500b将第二引脚与电路层110a、110b电连接。根据需要,可以选择先将第一引脚211a、211b和电路层110a、110b电连接后在将第二引脚与电路层110a、110b连接,也可以先将第二引脚和电路层110a、110b电连接后在将第一引脚211a、211b与电路层110a、110b连接。其中,基板100上设有一个以上的电路层110a、110b,第一引脚211a、211b至少与其中一个电路层110a、110b电连接,第二引脚至少与其中一个电路层110a、110b电连接。
在基板100上预先制作好连接通孔120a、120b,待将第一芯片210安放于基板100上后,再制作导电层400a、400b。其中,第一引脚211a、211b与连接通孔120a、120b的第一开口对接,不一定是严格对正,只要满足可以通过连接通孔120a、120b将第一引脚211a、211b与导电层400a、400b电连接即可。
可以是,通过所述连接通孔120a、120b的第二开口在所述连接通孔120a、120b内制作导电层400a、400b的过程中,将导电粘接材料从所述连接通孔120a、120b的第二开口送入所述连接通孔120a、120b内,使所述导电粘接材料粘接于所述连接通孔120a、120b的内壁和所述器件引脚上构成所述导电层400a、400b。采用从第二开口送入导电粘接材料的方式,可以在基板100的底面进行操作,而不会被元器件干扰,通过粘接的方式将导电粘接材料粘附于连
接通孔120a、120b以及第一引脚211a、211b的内壁,在加热处理或化学处理后同时形成机械和电连接,以获得稳定的导电连接性能。所述导电粘接材料为焊球、或焊锡膏、或导电胶、或导电金属浆,可以根据工艺需要或者基板100材质、连接通孔120a、120b内壁的性质,选择一种或多种的组合。也可以采用丝网印刷在所述连接通孔120a、120b内设置所述导电粘接材料。丝网印刷是电路层110a、110b常用制作方法,采用丝网印刷的方式制作导电层400a、400b,设备通用、可以和电路层110a、110b的制作同步进行,节约工艺流程,进一步降低成本。采用导电粘接材料最终获得的导电层400a、400b结构参照图14。
也可以是,通过所述连接通孔120a、120b的第二开口在所述连接通孔120a、120b内制作导电层400a、400b的过程中,采用电镀的方式制作所述导电层400a、400b。可以获得很好的导电性能,电镀可以控制导电层400a、400b的厚度,获得理想的导电性能。采用导电粘接材料最终获得的导电层400a、400b结构参照图5、7、8、10。
B、后打孔法步骤,包括:第一芯片210的底面设有第一引脚211a、211b,第二芯片220的顶面设有第二引脚,第二芯片220设于第一芯片210的顶面;将第一芯片210安放于基板100,第一芯片210的底面朝向基板100,基板100的顶面设有电路层110a、110b、或/和基板100的底面设有电路层110a、110b、或/和基板100内设有电路层110a、110b,电路层110a、110b设有电路引脚;将第一引脚211a、211b至少与其中一个电路层110a、110b电连接,在基板100上制作连接通孔120a、120b,使连接通孔120a、120b的第一开口与第一引脚211a、211b对接、并且电路引脚与连接通孔120a、120b对接,通过连接通孔120a、120b的第二开口在连接通孔120a、120b内制作导电层400a、400b,使导电层400a、400b将第一引脚211a、211b和电路引脚电连接;第二引脚至少与其中一个电路层110a、110b电连接,通过导电引线500a、500b将第二引脚与电路层110a、110b电连接。将第一芯片210安放于基板100后,再在基板100上制作连接通孔120a、120b。
在后打孔法中,一般,一般预先在基板100制作好电路层110a、110b,但
不限于此,也可以在制作连接通孔导电层400a、400b的时候再在基板100上制作电路层110a、110b,例如,在基板100的底面设置脱模层,脱模层具有与电路层110a、110b类似轮廓的模型槽,在制作连接通孔120a、120b后,在制作导电层400a、400b的同时在模型槽内形成电路层110a、110b。以电镀制作方式为例,在电镀导电层400a、400b的同时,也在模型槽内和脱模层表面电镀一场导电层,然后除去脱模层以及其表面的导电层,就可以形成基板表面电路层110a、110b。采用电镀的方式制作导电层400a、400b的工艺还包括在电镀前,采用溅镀或者蒸镀的工艺制作辅助层,然后再电镀。溅镀或者蒸镀的辅助层能够更好地与电路引脚电连接,电镀的导电层400a、400b附着于辅助层。溅镀或者蒸镀辅助层,一方面可以提高电镀的质量,另一方面也能够更好地实现导电层400a、400b与电路引脚的电连接。如此,一道工艺同时完成两项工作,提高生产效率,降低成本。
根据需要,可以在基板100上预先制作好连接通孔120a、120b,也可以在安放第一芯片210后,再在基板100上制作连接通孔120a、120b。可以将第一芯片210和第二芯片220相固定,再将芯片组安放于基板100、将第一芯片210与电路层110a、110b电连接;也可以是,将第一芯片210安放于基板100后,再将第二芯片220安放于第一芯片210的顶面。
实施例二
实施例二与实施例一的区别在于:
如图8所示,第二芯片220为至少两个(图中仅示出两个),至少两个第二芯片220层叠设置,相邻的两个第二芯片220中,顶层的第二芯片220安装于底层的第二芯片220的顶面,并且顶层的第二芯片220与底层的第二芯片220上的第二引脚错开。第一芯片210的顶面可以设置至少两个第二芯片220,实现更多的电子功能。
如图9所示,最顶层的第二芯片220的顶面设有散热装置700。当芯片堆积时,在工作过程中会产生大量的热,设置散热装置700,有助于给芯片散热,
避免高温影响芯片的工作性能。
还设有封装层800,第一芯片210、第二芯片220、导电引线500a、500b、以及散热装置700位于封装层800与基板100之间,封装层800将第一芯片210、第二芯片220、导电引线500a、500b、以及散热装置700封装于基板100的顶面。
实施例三
实施例三与实施例一的区别在于:
如图10所示,基板100、封装层800、第一芯片210和第二芯片220构成封装子***900,两个封装子***900层叠设置,顶层封装子***900的基板100设于底层封装子***900的封装层800的顶面,底层封装子***900的封装层800设有穿孔801,穿孔801内设有导体,所述穿孔801内的导体将顶层所述封装子***900的电路层110a、110b和底层所述封装子***900的电路层110a、110b电连接。将两层以上的封装子***900层叠并相互连接,扩展了电路功能。封装子***900中,采用连接通孔120a、120b的方式将第一芯片210与基板100的电路层110a、110b连接,使得封装子***900本身的厚度小、体积小,因此。在相同体积、厚度要求下,可以设置更多层的封装子***900,大幅扩展了电路功能。
实施例四
基板100设有至少两层电路层110a、110b,基板100的顶面设有电路层110a、110b、或/和基板100的底面设有电路层110a、110b、或/和基板100内设有电路层110a、110b,第一引脚211a、211b为至少两个,其中一个第一引脚211a、211b至少与其中一个电路层110a、110b电连接、另一个第一引脚211a、211b至少与余下另一个电路层110a、110b电连接。第一芯片210同时与两层以上的电路层110a、110b连接,通讯端口增加,传输能力增强,扩展电路功能。
实施例五
实施例五与实施例一的区别是:
如图11至14所示,在所述连接通孔120a、120b的内壁设有保护层,所述保护层用于在制作所述附加通孔时保护所述基板100。制作所述附加通孔,可以使用但不限于化学蚀刻、或钻孔的工艺,此时需要穿过连接通孔120a、120b,可能会对连接通孔120a、120b的内壁造成损伤,进而对基板100、电路层110a、110b造成损伤,保护层可以保护连接通孔120a、120b的内壁不受损伤。进一步的,保护层可以是有助于导电层400a、400b电连接的材料,此时保护层可以与电路引脚接触,有助于电路引脚与导电层400a、400b的电连接。封装步骤如图10至13所示,首先,如图11、12所示,粘装膜300将第一芯片210粘贴于基板100;如图13所示,在粘装膜300上制作附加通孔;如图14所示,在连接通孔120a、120b内制作导电层400a、400b。
连接通孔120a、120b的内壁设有保护层,保护层同时也是辅助层121a、121b,保护层(辅助层121a、121b)未在图中示出,参照图10至13。并且,本实施例中保护层(辅助层121a、121b)采用与电路层110a、110b相同的材料制作,例如电路层110a、110b采用铜,保护层(辅助层121a、121b)也采用铜,进一步提到电连接性能。但不限于本实施例,可以根据需要,可以采用其他材料,可以单独设置提供保护的保护层或者辅助电连接的辅助层121a、121b。其中,保护层(辅助层121a、121b)与电路层110a、110b电连接,导电层400a、400b将器件引脚和电路引脚电连接。保护层(辅助层121a、121b)直接与电路引脚电连接,电连接效果好,并且可以延长电路引脚,缩小导电层400a、400b的体积,有利于导电层400a、400b的制作,也利于降低成本。
本实施例中,还可以是,采用电镀的方式制作导电层400a、400b,在电镀前,采用溅镀或者蒸镀的工艺制作辅助层121a、121b。溅镀或者蒸镀的辅助层121a、121b能够更好地与电路引脚电连接,电镀的导电层400a、400b附着于辅助层121a、121b,一方面可以更好的电镀,另一方面通过辅助层121a、121b
能够更好的实现导电层400a、400b与电路引脚电连接。并且溅镀、蒸镀、电镀可以对基板100上的所有元器件同时进行,提高效率。
本实施例中,预先在基板100制作好电路层110a、110b,但不限于此,也可以在集成电路封装时再在基板100上制作电路层110a、110b,例如,在基板100的底面设置脱模层,脱模层具有与电路层110a、110b轮廓类似的模型槽,在制作连接通孔120a、120b后,在制作导电层400a、400b的同时在模型槽内形成电路层110a、110b,例如采用电镀的方式制作导电层400a、400b,电镀的同时也在模型槽内和脱模层表面电镀一层导电材料,然后除去脱模层以及其表面的导电材料,就可以形成基板表面电路层110a、110b。
以上实施例所述“顶”、“底”方位参照附图所示的方位,但仅是为了表述清楚简洁,不能以此限定本发明创造的方位,集成电路多芯片层叠封装结构可以旋转为任意角度。
以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (13)
- 一种集成电路多芯片层叠封装结构,其特征在于,包括:第一芯片,所述第一芯片的底面设有第一引脚;第二芯片,所述第二芯片的顶面设有第二引脚;基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层;其中,所述第一芯片设于基板的顶面,所述第二芯片设于所述第一芯片的顶面;所述第一引脚至少与其中一个所述电路层电连接:所述电路层设有电路引脚,所述基板设有连接通孔,所述连接通孔与所述电路引脚对接,所述连接通孔的第一开口与所述第一引脚对接,所述连接通孔的第二开口为操作窗口,所述连接通孔内设有导电层,所述导电层将所述第一引脚和所述电路引脚电连接;所述第二引脚至少与其中一个所述电路层电连接:所述第二引脚与所述电路层通过导电引线电连接。
- 根据权利要求1所述的集成电路多芯片层叠封装结构,其特征在于,所述第二芯片为至少两个,至少两个所述第二芯片层叠设置,相邻的两个所述第二芯片中,顶层的所述第二芯片安装于底层的所述第二芯片的顶面,并且顶层的所述第二芯片与底层的所述第二芯片上的所述第二引脚错开。
- 根据权利要求2所述的集成电路多芯片层叠封装结构,其特征在于,最顶层的所述第二芯片的顶面设有散热装置。
- 根据权利要求1所述的集成电路多芯片层叠封装结构,其特征在于,所述第一芯片和所述基板之间设有粘装膜,所述粘装膜将所述第一芯片粘贴于所述基板,所述粘装膜设有附加通孔,所述附加通孔与所述连接通孔的第一开口相连通,所述导电层伸入所述附加通孔与所述第一引脚电连接。
- 根据权利要求1所述的集成电路多芯片层叠封装结构,其特征在于,还包括封装层,所述第一芯片、所述第二芯片位于所述封装层与所属基板之间,所述封装层将所述被第一芯片、所述第二芯片封装于所述基板的顶面。
- 根据权利要求1所述的集成电路多芯片层叠封装结构,其特征在于, 所述基板的顶面还设有加固条,所述加固条环绕或部分环绕于所述芯片周围。
- 根据权利要求6所述的集成电路多芯片层叠封装结构,其特征在于,所述基板的顶面还设有封装层,所述封装层包括填充层和外壳层,所述填充层、所述加固条、所述第一芯片、以及所述第二芯片位于所述外壳层和所述基板之间,所述加固条的一端抵靠所述基板、另一端抵靠所述外壳层,所述填充层填充于所述外壳层和所述基板之间。
- 根据权利要求1所述的集成电路多芯片层叠封装结构,其特征在于,所述基板包括至少两个基片,至少两个所述基片层叠设置,所述基片设有所述电路层,至少一个所述基片设有过孔,导电材料穿过所述过孔将至少两个所述电路层电连接。
- 根据权利要求1至8任一项所述的集成电路多芯片层叠封装结构,其特征在于,所述基板、所述封装层、所述第一芯片和所述第二芯片构成封装子***,两个所述封装子***层叠设置,顶层所述封装子***的基板设于底层所述封装子***的封装层的顶面,底层所述封装子***的封装层设有穿孔,所述穿孔内设有导体,所述穿孔内的导体将顶层所述封装子***的电路层和底层所述封装子***的电路层电连接。
- 根据权利要求1至8任一项所述的集成电路多芯片层叠封装结构,其特征在于,所述基板设有至少两层所述电路层,所述基板的顶面设有所述电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述第一引脚为至少两个,其中一个所述第一引脚至少与其中一个所述电路层电连接、另一个所述第一引脚至少与余下另一个所述电路层电连接。
- 根据权利要求1至8任一项所述的集成电路多芯片层叠封装结构,其特征在于,所述基板为柔性电路板、或所述基板包括至少两层层叠设置的柔性电路板。
- 一种集成电路多芯片层叠封装方法,其特征在于,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚,所述基板设有连接通孔,所述电路引脚与所述连接通孔对接;将所述第一引脚至少与其中一个所述电路层电连接,将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,使所述连接通孔的第一开口与所述第一引脚对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,所述导电层将所述第一引脚和所述电路引脚电连接;将所述第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
- 一种集成电路多芯片层叠封装方法,其特征在于,包括:第一芯片的底面设有第一引脚,第二芯片的顶面设有第二引脚,所述第二芯片设于所述第一芯片的顶面;将第一芯片安放于基板,所述第一芯片的底面朝向所述基板,所述基板的顶面设有电路层、或/和所述基板的底面设有电路层、或/和所述基板内设有电路层,所述电路层设有电路引脚;将所述第一引脚至少与其中一个所述电路层电连接,在所述基板上制作连接通孔,使所述连接通孔的第一开口与所述第一引脚对接、并且所述电路引脚与所述连接通孔对接,通过所述连接通孔的第二开口在所述连接通孔内制作导电层,使所述导电层将所述第一引脚和所述电路引脚电连接;所述第二引脚至少与其中一个所述电路层电连接,通过导电引线将所述第二引脚与所述电路层电连接。
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CN110088884A (zh) | 2019-08-02 |
US20190326261A1 (en) | 2019-10-24 |
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