WO2017212978A1 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
- Publication number
- WO2017212978A1 WO2017212978A1 PCT/JP2017/020003 JP2017020003W WO2017212978A1 WO 2017212978 A1 WO2017212978 A1 WO 2017212978A1 JP 2017020003 W JP2017020003 W JP 2017020003W WO 2017212978 A1 WO2017212978 A1 WO 2017212978A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- multilayer ceramic
- site
- volatile
- ceramic capacitor
- volatile element
- Prior art date
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 72
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010953 base metal Substances 0.000 claims abstract description 17
- 239000000470 constituent Substances 0.000 claims abstract description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 10
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 23
- 230000006866 deterioration Effects 0.000 abstract description 8
- 239000012298 atmosphere Substances 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 238000010304 firing Methods 0.000 description 17
- 239000002994 raw material Substances 0.000 description 17
- 239000000843 powder Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- -1 rare earth compounds Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
Definitions
- the present invention relates to a multilayer ceramic capacitor, and more particularly to a multilayer ceramic capacitor in which a dielectric layer is formed of a perovskite type compound and an internal electrode is formed of a base metal material.
- multilayer ceramic capacitors have been mounted on various electronic devices.
- a dielectric material used for this type of multilayer ceramic capacitor a BaTiO 3 compound capable of obtaining a high dielectric constant has been widely used.
- a base metal material such as Ni having low conductivity and good conductivity is widely used.
- Patent Document 1 includes a composition formula ⁇ (Ba 1-xy Ca x Br y ) O ⁇ m ⁇ TiO 2 (where m, x, and y are 1.005 ⁇ m ⁇ 1.03, 0.02 ⁇ x ⁇ 0.22 and 0.05 ⁇ y ⁇ 0.35.)
- a barium titanate-based dielectric magnetic composition represented by:
- Patent Document 1 Although an insulation resistance of 10 5 M ⁇ ⁇ cm or more can be secured in the initial stage of driving, when continuously driven at a high temperature for a long time, the insulation resistance is lowered and the insulation performance is deteriorated. There was a problem that reliability could not be secured.
- the present invention has been made in view of such circumstances, and even if the dielectric layer is formed of a perovskite type compound and the internal electrode is formed of a base metal material, the insulation performance deteriorates over time. It is an object of the present invention to provide a multilayer ceramic capacitor that can be suppressed and can ensure good reliability.
- a ceramic sintered body is usually produced by simultaneously firing a dielectric material and an internal electrode material.
- the present inventor made a ceramic raw material in which a volatile element was dissolved at the B site of a perovskite type compound containing Ti, and alternately laminated the ceramic raw material and a base metal internal electrode material such as Ni.
- the ceramic sintered body was fabricated by simultaneous firing in a reducing atmosphere, and intensive research was conducted.
- the volatile elements volatilized by the firing treatment in a reducing atmosphere are adjusted so as to be within a predetermined range in the ceramic sintered body, and the volatile elements are fixed so that a part of the volatile elements is fixed to the internal electrode. It has been found that the inclusion of the element in the internal electrode suppresses the deterioration of the insulation performance over time and improves the reliability.
- the multilayer ceramic capacitor according to the present invention is a multilayer ceramic capacitor having a ceramic sintered body in which dielectric layers and internal electrodes are alternately stacked.
- the dielectric layer is mainly composed of a perovskite type compound represented by the general formula ABO 3 , and the perovskite type compound contains at least a volatile element that dissolves in the Ti and B sites, and the internal electrode.
- the ceramic sintered body has a content of the volatile element of 0 mol with respect to 100 mol parts of the constituent elements of the B site excluding the volatile element. It is characterized by being larger than the part and not more than 0.2 mol part.
- the ratio of the constituent elements of the A site to the constituent elements of the B site excluding the volatile elements is 1.00 or more and 1.04 or less in terms of molar ratio.
- the volatile element includes at least one element selected from Zn, Sn, Sb, and In.
- the A-site element contains at least one element selected from Ba, Ca, and Sr.
- the multilayer ceramic capacitor of the present invention preferably contains at least one element selected from rare earth elements, transition metal elements, and Si as subcomponents.
- the rare earth element is at least one element selected from Gd, Dy, and Y.
- the transition metal element is at least one element selected from Mg, Al, Mn, Cu, and V.
- the dielectric layer has a main component represented by the general formula ABO 3 .
- the perovskite compound is formed of a base metal material containing at least the volatile element containing the volatile element, and the perovskite compound contains at least a volatile element that dissolves in the Ti and B sites.
- the content of the volatile element is larger than 0 mol part and not more than 0.2 mol part with respect to 100 mol parts of the constituent elements of the B site excluding the volatile element.
- Volatilization of volatile elements dissolved in the site suppresses the diffusion of oxygen defects and the internal electrode contains volatile elements, so some of the volatile elements are contained inside. Fixing to the partial electrode enhances the insulation at the interface between the dielectric layer and the internal electrode.
- the suppression of oxygen defect diffusion and the enhancement of insulation at the interface between the dielectric layer and the internal electrode act synergistically to improve the insulation performance, and continuously drive at high temperature for a long time. Even in this case, it is possible to obtain a multilayer ceramic capacitor with good reliability in which deterioration of the insulating performance with time is suppressed.
- FIG. 1 is a longitudinal sectional view showing an embodiment of a multilayer ceramic capacitor according to the present invention. It is a cross-sectional view of the ceramic sintered compact produced in the Example.
- FIG. 1 is a longitudinal sectional view schematically showing an embodiment of a multilayer ceramic capacitor according to the present invention.
- internal electrodes 2a to 2f are embedded in a ceramic sintered body 1, external electrodes 3a and 3b are formed at both ends of the ceramic sintered body 1, and the external electrodes 3a and 3b are further formed.
- the first plating films 4a and 4b and the second plating films 5a and 5b are formed on the surface.
- the ceramic sintered body 1 is formed by alternately laminating the dielectric layers 6a to 6g and the internal electrodes 2a to 2f, and the internal electrodes 2a, 2c, and 2e are electrically connected to the external electrode 3a.
- the internal electrodes 2b, 2d, and 2f are electrically connected to the external electrode 3b.
- a capacitance is formed between the opposing surfaces of the internal electrodes 2a, 2c, and 2e and the internal electrodes 2b, 2d, and 2f.
- the dielectric layers 6a to 6g are formed of a perovskite type compound whose main component is represented by the general formula ABO 3 .
- This perovskite type compound contains a volatile element E which is at least dissolved in Ti and B sites.
- the internal electrodes 2a to 2f are formed of a base metal material containing the volatile element E.
- the content of the volatile element E in the ceramic sintered body 1 composed of the dielectric layers 6a to 6g and the internal electrodes 2a to 2f is a constituent element of the B site (BE) excluding the volatile element E. ) More than 0 mol part and 0.2 mol part or less with respect to 100 mol parts.
- the internal electrode material and the dielectric green sheet are fired in a reducing atmosphere so that the internal electrode material is not oxidized. There is a need.
- the present inventor has conducted earnest research and produced a ceramic raw material in which a volatile element is solid-solved at the B site of a perovskite type compound containing Ti.
- the ceramic raw material and an internal electrode material of a base metal such as Ni are used.
- the ceramic sintered body was produced by alternately laminating and simultaneously firing while adjusting the reducing atmosphere.
- the volatilized volatile elements are within a predetermined range in the ceramic sintered body, and by fixing a part of the volatile elements to the internal electrode, the deterioration of the insulation performance over time is suppressed and reliability is improved. It has been found that it can be improved. The reason is guessed as follows.
- a vacancy (B site vacancy) is formed at the position where the volatile element E is volatilized. It is thought that it is formed.
- the B site vacancies have the effect of suppressing the migration / diffusion of oxygen defects formed by the firing treatment in a reducing atmosphere as described above. Therefore, the volatile element E is volatilized by the baking treatment to form B site vacancies, thereby suppressing the movement and diffusion of oxygen defects.
- the volatile element E in the ceramic raw material is effectively diffused to the internal electrodes 2a to 2f side.
- the volatile element E is contained in the internal electrodes 2a to 2f, and a part of the volatile element E is fixed to the internal electrodes 2a to 2g.
- fixing a part of the volatile element E to the internal electrodes 2a to 2g in this way it is considered that the insulation at the interface between the dielectric layers 6a to 6g and the internal electrodes 2a to 2f is enhanced.
- the content of the volatile element E in the ceramic sintered body 1 is regulated within a predetermined range, and a part of the volatile element E is contained in the internal electrode 2a so that the volatile element E is contained in the internal electrodes 2a to 2f.
- the suppression of oxygen defect diffusion and the enhancement of the insulation at the interface between the dielectric layer and the internal electrode act synergistically to improve the insulation performance. Even if it is continuously driven at a high temperature for a long time, it is possible to suppress the deterioration of the insulation performance over time and to improve the reliability.
- a strong reduction is performed as described above.
- the firing atmosphere is preferably adjusted to the side, and for example, the firing treatment is preferably performed with the oxygen partial pressure in the reducing atmosphere set to 10 ⁇ 12 to 10 ⁇ 13 MPa.
- the volatile element E in the ceramic sintered body 1 may be a content that causes the volatile element E to volatilize to form B site vacancies. However, if the content of the volatile element E in the ceramic sintered body 1 exceeds 0.2 mol part with respect to 100 mol parts of the B site element (BE) excluding the volatile element E, the volatile element E Even if E is fixed on the surfaces of the internal electrodes 2a to 2f, since the volatile element E remains excessively at the B site, a sufficient amount of B site vacancies cannot be formed in the crystal structure. Therefore, the movement / diffusion of oxygen vacancies cannot be sufficiently suppressed, so that a sufficient high-temperature load life cannot be obtained, and it becomes difficult to ensure desired reliability.
- BE B site element
- the content of the volatile element E is greater than 0 mol part and less than or equal to 0.2 mol part with respect to 100 mol parts of the B site element (BE) excluding the volatile element E.
- the volatile element E is contained in the dielectric layers 6a to 6g, the volatile element E is dissolved in the A site or simply contained as a secondary component and is present at the crystal grain boundary. In this case, even if the volatile element E volatilizes, the problem of the present invention cannot be solved. That is, in this case, since the volatile element E is not dissolved in the B site, it is considered that B site vacancies having a function of suppressing the diffusion of oxygen defects cannot be formed. Therefore, in the present invention, it is important that the volatile element E is dissolved in the B site within the above range.
- the volatile element E is not particularly limited as long as it is an element that has volatility and is a solid solution at the B site in a form that substitutes a part of Ti. It is preferable to use at least one element selected from Zn, Sn, Sb, and In, which has a radius close to Ti and easily replaces Ti, and among these, inexpensive Zn is particularly preferable. Used in
- the constituent element of the A site forming the perovskite type compound that is, the A site element is not particularly limited as long as it forms the main element of the ceramic material.
- the A site element is not particularly limited as long as it forms the main element of the ceramic material.
- Ba, Ca, and Sr are used. It is preferable to use at least one selected from among them, and among these, Ba that expresses particularly good dielectric properties can be preferably used.
- the B site element constituting the B site only needs to contain at least Ti and a volatile element, and may contain Zr, which is a tetravalent element, as necessary.
- perovskite type compound when a volatile element is represented by E, Ba (Ti, E) O 3 , Ba (Ti, Zr, E) O 3 , (Ba, Sr, Ca) (Ti, E) O 3 , (Ba, Ca, Sr) (Ti, Zr, E) O 3 and the like.
- the constituent material of the internal electrode is not particularly limited as long as it is a base metal material containing at least Zn.
- the base metal material include Ni, Cu, and Ni alloys and Cu alloys based on these Ni and Cu. These alloys can be used.
- the ratio of the A site element to the B site element (A / B ratio) of the perovskite type compound is 1.000, but is not limited to the stoichiometric ratio.
- the ratio of the A site element to the B site element excluding the volatile element that is, the A / (BE) ratio is less than 1.00, the A site element decreases, and therefore the volatile element E volatilizes.
- high reliability may not be obtained.
- the A / (BE) ratio is preferably 1.00 or more and 1.04 or less.
- the dielectric layers 6a to 6g need only have the main component (for example, more than 50 wt%, preferably 80 wt% or more, more preferably 90 wt% or more) formed of the perovskite compound, and do not affect the characteristics.
- the main component for example, more than 50 wt%, preferably 80 wt% or more, more preferably 90 wt% or more
- Gd, Dy, Y, or the like can be used as the rare earth element
- Mg, Al, Mn, Cu, V, or the like can be used as the transition metal element.
- rare earth elements and transition metal elements it is not preferable to dissolve these rare earth elements and transition metal elements in the main component.
- an acceptor element such as Mg needs to be dissolved in the main component together with the rare earth element in order to ensure reduction resistance.
- Mg has high ionicity with respect to Ti, if Mg is dissolved in the main component, the Curie point is lowered, which may cause a decrease in relative permittivity at high temperatures, which is not preferable.
- a ceramic raw material such as a Ba compound, a Ti compound, and a volatile compound containing a volatile element is prepared. Then, a predetermined amount of these ceramic raw materials are weighed, and this weighed material is put into a ball mill together with grinding media such as PSZ (Partially Stabilized Zirconia) balls and pure water, and sufficiently wet-mixed and ground and dried. After that, a calcining treatment is performed at a temperature of 900 to 1100 ° C. for a predetermined time to synthesize, thereby producing a main component powder.
- grinding media such as PSZ (Partially Stabilized Zirconia) balls and pure water
- auxiliary components such as rare earth compounds, transition metal compounds, and Si compounds are prepared as necessary, and a predetermined amount is weighed. Then, these weighed materials are put into a ball mill together with the main component powder, pulverizing medium and pure water, sufficiently mixed and pulverized in a wet state, mixed and dried, thereby producing a ceramic raw material powder.
- the ceramic raw material powder is put into a ball mill together with an organic binder, an organic solvent, and a grinding medium and wet mixed to produce a ceramic slurry.
- the ceramic slurry is molded by a lip method, a doctor blade method, etc.
- a ceramic green sheet is prepared so that the thickness is about 2 ⁇ m or less.
- a conductive paste for internal electrodes whose main component is a base metal material such as Ni is prepared. Then, screen printing is performed on the ceramic green sheet using the conductive paste for internal electrodes, and a conductive film having a predetermined pattern is formed on the surface of the ceramic green sheet.
- a plurality of ceramic green sheets with a conductive film formed are stacked in a predetermined direction, a ceramic sheet without a conductive film is placed on the top layer, pressure-bonded, and cut into predetermined dimensions to produce a ceramic laminate. To do.
- the ceramic laminate is heat-treated at a temperature of 250 to 350 ° C. in an air atmosphere, and the binder is burned and removed, and then in a strongly reducing atmosphere made of H 2 —N 2 —H 2 O gas (for example, The baking is performed at an oxygen partial pressure of 10 ⁇ 11 to 10 ⁇ 13 MPa) and a baking temperature of 1200 to 1300 ° C. for about 2 hours.
- the baking is performed at an oxygen partial pressure of 10 ⁇ 11 to 10 ⁇ 13 MPa) and a baking temperature of 1200 to 1300 ° C. for about 2 hours.
- the conductive film and the ceramic green sheet are co-sintered, and the ceramic sintered body 1 in which the internal electrodes 2a to 2f are embedded is obtained.
- the volatile element E is appropriately volatilized by this baking treatment and diffuses to the internal electrodes 2a to 2f side.
- a part of the volatile element E is fixed to the internal electrodes 2a to 2f. That is, the volatile element E is contained in the internal electrodes 2a to 2f, and the content of the volatile element E is greater than 0 with respect to 100 mol parts of the B site element (BE) excluding the volatile element E, and is less than 0.00.
- a ceramic sintered body 1 having 2 mol parts or less can be obtained.
- the volatilization amount of the volatile element E is not particularly limited as long as the content of the volatile element E satisfies the above range in the ceramic sintered body 1.
- a conductive paste for external electrodes is applied to both end faces of the ceramic sintered body 1, and a baking treatment is performed at a temperature of 600 to 800 ° C. to form the external electrodes 3a and 3b.
- the conductive material contained in the conductive paste for external electrodes is not particularly limited, but from the viewpoint of cost reduction, a material mainly composed of Ag, Cu, or an alloy thereof is used. It is preferable to do this.
- the conductive paste for external electrodes may be applied to both end faces of the laminated molded body, and then fired at the same time as the laminated molded body.
- first plating films 4a and 4b made of Ni, Cu, Ni—Cu alloy or the like on the surfaces of the external electrodes 3a and 3b, and further, the first plating film 4a, Second plating films 5a and 5b made of solder, tin or the like are formed on the surface of 4b, whereby a multilayer ceramic capacitor is manufactured.
- ceramic raw materials such as Ba compounds and Ti compounds can be appropriately selected according to the form of the synthesis reaction, such as carbonates, oxides, nitrates, hydroxides, organic acid salts, alkoxides, chelate compounds, and the like. .
- the method for synthesizing the main component powder is not limited to the above-described solid phase method, and synthesis methods such as a coprecipitation method, a hydrothermal method, and an oxalic acid method may be used.
- BaCO 3 , TiO 2 , and ZnO are prepared as ceramic raw materials, and the Zn content (mole part) with respect to 100 mol parts of Ti and the molar ratio of Ba to Ti (hereinafter referred to as “Ba / Ti ratio”). These ceramic raw materials were weighed so as to become Table 1 after synthesis. Then, these weighed materials are put into a ball mill together with PSZ balls and pure water, mixed and pulverized sufficiently by wet, dried, and calcined in the atmosphere at a temperature of 900 to 1100 ° C. for about 2 hours. Ingredient powder was prepared.
- the ceramic raw material powders of the sample numbers 1 to 13 were subjected to composition analysis by ICP-AES method (high frequency inductively coupled plasma emission analysis method) and XRF method (fluorescence X-ray method).
- the Ba / Ti ratio was calculated. As a result, it was confirmed that the composition was the same as the weighed composition.
- the ceramic raw material powder was put into a ball mill together with ethanol, polyvinyl butyral binder, plasticizer and PSZ balls, and wet-mixed to prepare a ceramic slurry.
- a ceramic slurry was formed by a doctor blade method so that the thickness after firing was 2.0 ⁇ m to produce a ceramic green sheet.
- a conductive paste for internal electrodes mainly composed of Ni powder was prepared. Then, screen printing was performed on the ceramic green sheet using the conductive paste for internal electrodes, and a conductive film having a predetermined pattern was formed on the surface of the ceramic green sheet.
- a predetermined number of ceramic green sheets on which conductive films were formed were laminated, a ceramic green sheet on which conductive films were not formed was placed on the uppermost layer, crimped, and cut into predetermined dimensions to produce a ceramic laminate.
- the binder removal treatment is performed by heating at 350 ° C. for 3 hours in an air atmosphere, and then H 2 —N 2 —H 2 in which the oxygen partial pressure is controlled to 10 ⁇ 9 to 10 ⁇ 13 MPa.
- a sintered body was obtained.
- a conductive paste for external electrodes containing Cu powder and glass frit is applied to both end faces of the ceramic sintered body, and subjected to a baking treatment at a temperature of 800 ° C. in a nitrogen atmosphere to form external electrodes.
- Samples 1 to 13 were prepared.
- the thickness of the dielectric layer of each sample obtained was 2.0 ⁇ m, the thickness of the internal electrode was 0.6 ⁇ m, and the external dimensions were length L: 3.2 mm, width W: 1.6 mm, and thickness T: 0.
- the counter electrode area per dielectric layer was 2.5 mm 2 and the effective number of dielectric layers was 200.
- Example evaluation For each of the samples Nos. 1 to 13, the ceramic sintered body was structurally analyzed by the XRD method (X-ray diffraction method). As a result, it was confirmed that all the main components had a BaTiO 3 perovskite crystal structure. It was done.
- the ceramic sintered body was dissolved, analyzed by ICP-AES, and the Zn content with respect to 100 mol parts of Ti in the ceramic sintered body was measured.
- a ceramic and sintered body are subjected to Zn and Ni mapping analysis in a plurality of regions to determine whether or not a Zn component is detected in the internal electrode. Examined.
- FIG. 2 is a cross-sectional view of the ceramic sintered body.
- Dielectric layers 52 having a thickness of 2.0 ⁇ m and internal electrodes 53 having a thickness of 0.6 ⁇ m are alternately stacked so that the number of stacked layers is 200.
- a DC voltage of 20 V was applied to each of the 10 samples at a temperature of 175 ° C., a sample having an insulation resistance lowered to 10 k ⁇ or less was judged as defective, and a failure time at 50% on the Weibull probability paper by the Weibull plot, Average failure time was determined. A sample having an average failure time of 100 hours or less was judged as a defective product.
- Table 1 shows the Ba / Ti ratio of each sample Nos. 1 to 13, the Zn content after synthesis with respect to 100 mol parts of Ti and after the firing treatment, the presence or absence of Zn in the internal electrode 53, and the average failure time. ing.
- the Zn content after the firing treatment is reduced to about 1/5 of the Zn content after the synthesis, so that Zn is volatilized by the firing treatment.
- the average failure time was as short as 18 hours.
- Zn is volatilized by the firing process
- the Zn content is as high as 0.30 mole part with respect to 100 mole parts of Ti even after firing, and Zn is excessively present at the B site. It seems that the B-site vacancies could not be formed to such an extent that can be suppressed.
- Sample Nos. 2, 4, 6, 8, 10, and 12 show that the Zn content after firing is lower than that after synthesis, and a certain amount of Zn is volatilized by the firing treatment. It was. Then, the Zn content in the ceramic sintered body 51 is 0.010 to 0.18 mol part with respect to 100 mol parts of Ti, and is greater than 0 mol part and less than or equal to 0.20 mol part. It has been detected. That is, since these sample numbers 2, 4, 6, 8, 10, and 12 are within the scope of the present invention, the diffusion / migration of oxygen vacancies is suppressed and insulation at the interface between the dielectric layer 52 and the internal electrode is performed. It has been found that a multilayer ceramic capacitor having good reliability can be obtained with synergistic strengthening acting synergistically to improve insulation performance and an average failure time of 130 to 270 hours.
- the sample within the range of the present invention has a Ba / Ti ratio of 1.01 to 1.04, which is within the preferable range of the present invention.
- the Zn content and the fixing of Zn in the internal electrode can be achieved.
- it was confirmed that a multilayer ceramic capacitor having desired good reliability with enhanced insulation can be obtained.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
セラミック素原料として、BaCO3、TiO2、及びZnOを用意し、Ti100モル部に対するZnの含有量(モル部)、及びTiに対するBaのモル比(以下、「Ba/Ti比」という。)が合成後に表1となるように、これらセラミック素原料を秤量した。そしてこれら秤量物をPSZボール及び純水と共にボールミルに投入し、十分に湿式で混合粉砕し、乾燥させた後、900~1100℃の温度で約2時間、大気雰囲気で仮焼し、これにより主成分粉末を作製した。
この試料番号1~13の各試料について、セラミック焼結体をXRD法(X線回析法)で構造解析したところ、主成分は、いずれもBaTiO3系のペロブスカイト型結晶構造を有することが確認された。
2a~2f 内部電極
6a~6g 誘電体層
Claims (8)
- 誘電体層と内部電極とが交互に積層されたセラミック焼結体を有する積層セラミックコンデンサにおいて、
前記誘電体層は、主成分が、一般式ABO3で表されるペロブスカイト型化合物で形成され、前記ペロブスカイト型化合物は、少なくともTi及びBサイトに固溶する揮発性元素を含有すると共に、
前記内部電極が、前記揮発性元素を含む卑金属材料で形成され、
前記セラミック焼結体は、前記揮発性元素の含有量が、前記揮発性元素を除く前記Bサイトの構成元素100モル部に対し、0モル部より大きくかつ0.2モル部以下であることを特徴とする積層セラミックコンデンサ。 - 前記揮発性元素を除く前記Bサイトの構成元素に対するAサイトの構成元素の比率が、モル比換算で1.00以上1.04以下であることを特徴とする請求項1記載の積層セラミックコンデンサ。
- 前記揮発性元素は、Zn、Sn、Sb、及びInの中から選択された少なくとも1種以上の元素を含むことを特徴とする請求項1又は請求項2記載の積層セラミックコンデンサ。
- 前記Aサイトは、Ba、Ca、及びSr中から選択された少なくとも1種以上の元素を含むことを特徴とする請求項1乃至請求項3のいずれかに記載の積層セラミックコンデンサ。
- 前記Bサイトは、Zrを含むことを特徴とする請求項1乃至請求項4のいずれかに記載の積層セラミックコンデンサ。
- 希土類元素、遷移金属元素、及びSiの中から選択された少なくとも1種以上の元素が、副成分として含有されていることを特徴とする請求項1乃至請求項5のいずれかに記載の積層セラミックコンデンサ。
- 前記希土類元素は、Gd、Dy、及びYの群から選択された少なくとも1種以上の元素を含むことを特徴とする請求項6記載の積層セラミックコンデンサ。
- 前記遷移金属元素は、Mg、Al、Mn、Cu、Vの群から選択された少なくとも1種以上の元素を含むことを特徴とする請求項6記載の積層セラミックコンデンサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018522430A JP6624473B2 (ja) | 2016-06-06 | 2017-05-30 | 積層セラミックコンデンサ |
CN201780033842.9A CN109219861B (zh) | 2016-06-06 | 2017-05-30 | 层叠陶瓷电容器 |
KR1020187029454A KR102137395B1 (ko) | 2016-06-06 | 2017-05-30 | 적층 세라믹 콘덴서 |
US16/167,665 US10726994B2 (en) | 2016-06-06 | 2018-10-23 | Multilayer ceramic capacitor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016112613 | 2016-06-06 | ||
JP2016-112613 | 2016-06-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/167,665 Continuation US10726994B2 (en) | 2016-06-06 | 2018-10-23 | Multilayer ceramic capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017212978A1 true WO2017212978A1 (ja) | 2017-12-14 |
Family
ID=60578695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/020003 WO2017212978A1 (ja) | 2016-06-06 | 2017-05-30 | 積層セラミックコンデンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US10726994B2 (ja) |
JP (1) | JP6624473B2 (ja) |
KR (1) | KR102137395B1 (ja) |
CN (1) | CN109219861B (ja) |
TW (1) | TWI642074B (ja) |
WO (1) | WO2017212978A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019102752A (ja) * | 2017-12-07 | 2019-06-24 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
KR102433617B1 (ko) * | 2019-06-28 | 2022-08-18 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층형 전자부품 및 적층형 전자부품의 제조 방법 |
JP7338310B2 (ja) * | 2019-08-07 | 2023-09-05 | 株式会社村田製作所 | 積層型電子部品 |
TWI740261B (zh) * | 2019-11-04 | 2021-09-21 | 興勤電子工業股份有限公司 | 陶瓷組成物之用途、陶瓷燒結體之用途及熱敏電阻器 |
CN112759384B (zh) * | 2019-11-06 | 2022-09-30 | 兴勤电子工业股份有限公司 | 陶瓷组成物用于热敏电阻器的用途、陶瓷烧结体用于热敏电阻器的用途及热敏电阻器 |
JP2022136821A (ja) * | 2021-03-08 | 2022-09-21 | Tdk株式会社 | セラミック電子部品 |
JP2022136771A (ja) * | 2021-03-08 | 2022-09-21 | Tdk株式会社 | セラミック電子部品 |
KR20230068721A (ko) * | 2021-11-11 | 2023-05-18 | 삼성전기주식회사 | 커패시터 부품 및 커패시터 부품의 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11134941A (ja) * | 1997-10-31 | 1999-05-21 | Kyocera Corp | 誘電体磁器および積層セラミックコンデンサ |
WO2010098033A1 (ja) * | 2009-02-27 | 2010-09-02 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2012046372A (ja) * | 2010-08-26 | 2012-03-08 | Hitachi Metals Ltd | Ptc素子および発熱モジュール |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5567567A (en) | 1978-11-10 | 1980-05-21 | Murata Manufacturing Co | Nonreducible dielectric porcelain composition and preparing ceramic laminated capacitor using same |
JP2680480B2 (ja) | 1991-01-30 | 1997-11-19 | 太陽誘電 株式会社 | 積層セラミックコンデンサ |
JPH07118431B2 (ja) * | 1991-03-16 | 1995-12-18 | 太陽誘電株式会社 | 磁器コンデンサ及びその製造方法 |
JP3064668B2 (ja) | 1992-06-02 | 2000-07-12 | 松下電器産業株式会社 | 積層セラミック磁器素子の製造方法 |
JPH09246084A (ja) | 1996-03-11 | 1997-09-19 | Murata Mfg Co Ltd | 積層セラミック電子部品 |
JPH10139405A (ja) * | 1996-11-12 | 1998-05-26 | Murata Mfg Co Ltd | 複合ペロブスカイト化合物粉体の製造方法 |
JP3567759B2 (ja) * | 1998-09-28 | 2004-09-22 | 株式会社村田製作所 | 誘電体セラミック組成物および積層セラミックコンデンサ |
US20040121153A1 (en) * | 2002-12-20 | 2004-06-24 | Sridhar Venigalla | High tetragonality barium titanate-based compositions and methods of forming the same |
KR100586961B1 (ko) * | 2004-04-14 | 2006-06-08 | 삼성전기주식회사 | 내환원성 유전체 자기조성물과 초박층 적층세라믹 콘덴서 |
JP2007297258A (ja) * | 2006-04-28 | 2007-11-15 | Taiyo Yuden Co Ltd | 誘電体セラミックス及び積層セラミックコンデンサ |
DE112007002865B4 (de) * | 2006-12-05 | 2018-03-01 | Murata Manufacturing Co., Ltd. | Dielektrische Keramik und diese verwendender Mehrschicht-Keramikkondensator |
JP5297011B2 (ja) | 2007-07-26 | 2013-09-25 | 太陽誘電株式会社 | 積層セラミックコンデンサ及びその製造方法 |
WO2009136320A1 (en) * | 2008-05-08 | 2009-11-12 | Nxp B.V. | Tunable capacitor |
JP5740645B2 (ja) * | 2010-04-13 | 2015-06-24 | 国立研究開発法人産業技術総合研究所 | 配向ペロブスカイト酸化物薄膜 |
JP5811103B2 (ja) * | 2011-02-14 | 2015-11-11 | 株式会社村田製作所 | 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 |
WO2012111592A1 (ja) | 2011-02-14 | 2012-08-23 | 株式会社村田製作所 | 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 |
WO2015016268A1 (ja) * | 2013-07-30 | 2015-02-05 | 京セラ株式会社 | 誘電体フィルム、フィルムコンデンサ、および電気装置 |
-
2017
- 2017-05-18 TW TW106116425A patent/TWI642074B/zh active
- 2017-05-30 WO PCT/JP2017/020003 patent/WO2017212978A1/ja active Application Filing
- 2017-05-30 JP JP2018522430A patent/JP6624473B2/ja active Active
- 2017-05-30 CN CN201780033842.9A patent/CN109219861B/zh active Active
- 2017-05-30 KR KR1020187029454A patent/KR102137395B1/ko active IP Right Grant
-
2018
- 2018-10-23 US US16/167,665 patent/US10726994B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11134941A (ja) * | 1997-10-31 | 1999-05-21 | Kyocera Corp | 誘電体磁器および積層セラミックコンデンサ |
WO2010098033A1 (ja) * | 2009-02-27 | 2010-09-02 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2012046372A (ja) * | 2010-08-26 | 2012-03-08 | Hitachi Metals Ltd | Ptc素子および発熱モジュール |
Also Published As
Publication number | Publication date |
---|---|
US10726994B2 (en) | 2020-07-28 |
US20190057813A1 (en) | 2019-02-21 |
JP6624473B2 (ja) | 2019-12-25 |
KR20180122418A (ko) | 2018-11-12 |
KR102137395B1 (ko) | 2020-07-24 |
TWI642074B (zh) | 2018-11-21 |
JPWO2017212978A1 (ja) | 2019-03-07 |
CN109219861B (zh) | 2021-08-13 |
CN109219861A (zh) | 2019-01-15 |
TW201812810A (zh) | 2018-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6624473B2 (ja) | 積層セラミックコンデンサ | |
JP5182531B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
KR101836194B1 (ko) | 적층 세라믹 콘덴서 및 그 제조 방법 | |
JP5151990B2 (ja) | 誘電体セラミックおよびそれを用いた積層セラミックコンデンサ | |
JP5131595B2 (ja) | 誘電体セラミック、及びセラミック電子部品、並びに積層セラミックコンデンサ | |
JP5455164B2 (ja) | 誘電体磁器組成物、及び積層セラミックコンデンサ | |
JP5224074B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP5811103B2 (ja) | 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 | |
JP6631854B2 (ja) | 誘電体磁器組成物、積層セラミックコンデンサ、及び積層セラミックコンデンサの製造方法 | |
JP4345071B2 (ja) | 積層セラミックコンデンサ、及び該積層セラミックコンデンサの製造方法 | |
KR101575614B1 (ko) | 유전체 세라믹 및 적층 세라믹 콘덴서 | |
JP5120255B2 (ja) | 誘電体セラミック及びその製造方法、並びに積層セラミックコンデンサ | |
JP5035028B2 (ja) | 誘電体セラミックおよび積層セラミックコンデンサ | |
WO2014167754A1 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP5370615B2 (ja) | 積層セラミックコンデンサ | |
JP2010163321A (ja) | 誘電体セラミックおよび積層セラミックコンデンサ | |
JP6372569B2 (ja) | 誘電体セラミックおよび積層セラミックコンデンサ | |
JP6519726B2 (ja) | 積層セラミックコンデンサ | |
JP6680457B2 (ja) | 積層セラミックコンデンサ | |
JP2022098291A (ja) | 誘電体磁器組成物および電子部品 | |
JP2022098294A (ja) | 誘電体磁器組成物および電子部品 | |
JP2005219992A (ja) | 圧電磁器組成物および圧電素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 20187029454 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2018522430 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17810157 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17810157 Country of ref document: EP Kind code of ref document: A1 |