WO2017130366A1 - Dispositif de mesure de motifs et programme informatique - Google Patents

Dispositif de mesure de motifs et programme informatique Download PDF

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Publication number
WO2017130366A1
WO2017130366A1 PCT/JP2016/052561 JP2016052561W WO2017130366A1 WO 2017130366 A1 WO2017130366 A1 WO 2017130366A1 JP 2016052561 W JP2016052561 W JP 2016052561W WO 2017130366 A1 WO2017130366 A1 WO 2017130366A1
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pattern
patterns
measurement value
layer
measurement
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PCT/JP2016/052561
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Japanese (ja)
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修 井上
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株式会社 日立ハイテクノロジーズ
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Publication of WO2017130366A1 publication Critical patent/WO2017130366A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube

Definitions

  • the present invention relates to a pattern measurement apparatus and a computer program, and more particularly to a pattern measurement apparatus and a computer program for evaluating the superposition of a periodic array pattern and a region selection pattern for selecting a part of the periodic array pattern.
  • JP 2010-177500 A (corresponding U.S. Patent Publication No. US 2011/0268363)
  • DSA Directed Self-Assembly
  • This method uses a material in which two types of polymers, called polymer block copolymers, are synthesized and block-bonded, and is patterned using the phenomenon of self-organization due to the difference in thermodynamic properties of the two types of polymers. Is the law.
  • a plurality of patterns having a pitch of 1 / N can be formed in a self-alignment manner using a pattern (guide pattern) formed by a lithography technique.
  • SAMP Self Aligned Multiple Patterning
  • a SiO2 film or the like is deposited on the pattern (dummy pattern) formed by the lithography technique with a CVD film and etched, only the CVD film on the side wall portion of the dummy pattern remains and the dummy pattern is removed. Is formed. By repeating this, patterns of 1/4 pitch and 1/8 pitch of the dummy pattern are formed.
  • SADP Self Aligned Double Patterning
  • SAQP Self Aligned Quadruple Patterning
  • the pattern formed by DSA, SAMP, etc. becomes a periodic array pattern over a wide range.
  • a pattern that is formed to select the area to be applied (this may be referred to as an area selection pattern) is added before or after the periodic array pattern process. To do.
  • an area selection pattern is added before or after the periodic array pattern process.
  • a periodic array pattern to which a device pattern is applied is formed. Since the accuracy of overlaying the periodic array pattern formed by DSA, SAMP, etc. and the region selection pattern greatly affects the performance and yield of the device, the measurement is expected to be important.
  • the periodic arrangement pattern that is located is displayed on the SEM image, the periodic arrangement pattern of the other part is shielded by the region selection pattern or after the pattern is actually selected, It is difficult to confirm with an SEM image. That is, the overlapping state between the periodic array pattern and the region selection pattern is determined based on the periodic array pattern image that is visible in the opening portion of the region selection pattern or the actually selected periodic array pattern image. It is necessary to judge.
  • the selected periodic array pattern changes in the number of patterns and the size and shape of the pattern located at the end depending on the state of superposition. There is no discussion about the method of evaluating the overlap between the two.
  • the overlay error between the pattern formed in the first layer and the pattern formed in the second layer is determined based on the signal obtained by the charged particle beam apparatus.
  • a pattern measurement apparatus having a calculation device to be obtained or a computer program for causing a computer to calculate an overlay error, wherein the calculation device is a signal obtained based on scanning of a charged particle beam with respect to a sample in which a plurality of patterns are arranged To obtain a first measurement value of the first pattern located at one end of the plurality of patterns and a second measurement value of the second pattern located at the other end of the plurality of patterns.
  • a pattern meter for determining at least one of the direction of overlay displacement between the first layer and the second layer and the amount of displacement based on the comparison between the measured value and the second measured value. Apparatus, or to propose a computer program.
  • the pattern formed on the first layer and the pattern formed on the second layer are overlapped based on the signal obtained by the charged particle beam apparatus.
  • a pattern measuring apparatus including an arithmetic unit for obtaining an alignment error, wherein the arithmetic unit calculates the number of the plurality of patterns from a signal obtained based on scanning of a charged particle beam with respect to a sample on which a plurality of patterns are arranged.
  • the number of the patterns is different from the predetermined number, the direction of overlay displacement between the first layer and the second layer and the amount of displacement based on the measurement of the plurality of patterns.
  • region Schematic explanatory diagram of a measurement and inspection system in which a plurality of measurement or inspection devices are connected to a network.
  • the figure explaining the overlay error measuring method in case a periodic arrangement pattern is formed by DSA.
  • the figure explaining the overlay error measurement method in case a periodic arrangement pattern is formed by SAQP.
  • sequence is a hole pattern.
  • region is changed.
  • the flowchart which shows the process at the time of performing an overlay shift
  • the predetermined region is defined as a pattern based on the difference calculation and comparison between the measurement value of the first pattern on one end side and the measurement value of the second pattern disposed on the other end side of the pattern.
  • Embodiments described below relate to a method, an apparatus, and a computer program for evaluating using an image of an end of an arrangement pattern in which only a predetermined area obtained by a scanning electron microscope or the like is selected.
  • the present invention relates to a method, an apparatus, and a computer program that can perform overlay measurement evaluation of a periodically arranged pattern and a region selection pattern for selecting a region to which a part of the pattern is applied as a processing pattern.
  • SEM is used for measurement of the processed pattern width (hereinafter referred to as “measurement”) and appearance inspection. Widely used.
  • a scanning electron microscope emits an electron beam emitted from an electron source and narrowed down by a converging lens and an objective lens using a magnetic field or an interaction between an electric field and an electron beam on a sample using a deflector.
  • the secondary signal (secondary electrons, reflected electrons, and electromagnetic waves) generated from the sample by electron beam irradiation is detected by a detector using the photoelectric effect, and the detection signal is synchronized with the scanning of the electron beam.
  • This is an apparatus for forming a sample image by converting and processing the signal into a visible signal such as a luminance signal.
  • a method for finely processing the surface of a semiconductor element, a thin film magnetic head or the like a method of forming a pattern with a fine structure such as photolithography or nanoimprint using light, an electron beam, an original plate or the like is generally used.
  • the periodic array pattern forming method there is a DSA that forms a fine ordered structure using a self-organization phenomenon.
  • a well-known technique in which regularly arranged holes and line and space patterns are formed on a substrate using a polymer block copolymer thin film made of polystyrene (PS) and polymethyl methacrylate (PMMA) is known. It has been.
  • the shape of the periodic pattern to be formed holes or lines and spaces, etc.
  • the pitch of the periodic arrangement of the shape the molecular weight, the mixing ratio, etc. Determined by.
  • the first method by self-organization is to process grooves / holes on the surface of the base substrate, and to form a polymer layer containing a polymer block copolymer composition inside the groove / hole as a guide to form a regular array pattern. It is a method of forming.
  • the guide is sized to be about 2 to 10 times the self-organization pattern period so that the arrangement is stable.
  • the microstructure is arranged in a range limited by the guide, and the long-range order of self-organization is improved.
  • the second method by self-organization is a method of chemically patterning the base substrate surface.
  • regions having different affinities for each block chain constituting the polymer block copolymer are formed as a pattern.
  • a region having a good chemical affinity with polystyrene is about half the self-organization cycle and is twice to ten times the self-assembly cycle. Arrange at a period of about twice.
  • Other regions are chemically formed to have the same affinity as polystyrene and polymethylmethacrylate.
  • the pattern by self-organization of the polymer block copolymer on the surface of this substrate is formed on the guide by using a region having good chemical affinity with polystyrene as a guide. Periodic arrangement from the pattern improves the long-range order of self-organization.
  • a second method for forming a periodic array pattern there is a method called SAMP (Self Align MultiplePatterning).
  • SAMP Self Align MultiplePatterning
  • a film such as SiO2 is deposited by CVD and a process such as etching is performed to form a pattern having a dummy pattern of 1/2 pitch.
  • the pattern layout is limited to the dummy pattern arrangement.
  • the dummy pattern is often formed in a periodic arrangement, and therefore a process for deleting or selecting a part of the pattern is required.
  • a third periodic array pattern forming method there is a method of performing lithography under a proof condition specialized for an array of a certain period. Furthermore, a periodic array pattern is formed by combining multiple exposures called double patterning (hereinafter referred to as DP). Since this pattern is formed by a lithography technique specialized for periodic arrangement, a process for deleting or selecting a part of the pattern is required.
  • DP double patterning
  • the periodic array pattern by DSA, SAMP, and DP is generated by aligning the pattern array to be formed.
  • the guide and the scientific pattern and the dummy pattern on the base substrate surface are generally generated by lithography technology, and the pattern is the lower layer pattern. It is formed by measuring and adjusting the overlay. Further, the formed periodic array pattern has a deviation from the array and its dimensions due to processes after lithography.
  • a process for selecting a region to be applied and forming a region selection pattern for making the device pattern is applied. ⁇ By superimposing these two patterns, a periodic array pattern that applies the device pattern is formed.
  • the embodiment described below relates to an image processing method and apparatus for evaluating a process such as superposition of patterns formed mainly by the periodic arrangement pattern and the region selection pattern as described above.
  • the measurement result brought about by such image processing is used for evaluation of overlay between a periodic arrangement pattern and a region selection pattern and evaluation of a technique for forming a selection region of a periodic arrangement using the region selection pattern.
  • a method for measuring the overlay deviation of the relative positions and an image processing method for evaluation are proposed.
  • a charged particle beam apparatus is illustrated as an apparatus for forming an image, and an example using an SEM is described as one mode thereof.
  • the present invention is not limited to this.
  • an ion beam is scanned over a sample.
  • a focused ion beam (FIB) apparatus that forms an image may be employed as the charged particle beam apparatus.
  • the type of the imaging device is not limited as long as the periodic array pattern in which the region is selected within the field of view of the captured image can be evaluated based on the image processing.
  • FIG. 1 is a diagram for explaining the principle of the measurement method in this embodiment.
  • Reference numeral 101 denotes a periodic arrangement pattern formed by DSA or SAMP.
  • Reference numeral 102 denotes an area selection pattern for selecting an area to be a device pattern from among 101
  • reference numeral 105 denotes a pattern formed by a process in which 101 and 102 are overlapped. Only the periodic arrangement pattern of the area selected in 102 becomes the pattern in 105. In general, the end of the region selection pattern is arranged between the selected region and the non-selected region.
  • Reference numeral 103 denotes a relative position of the periodic arrangement pattern layer to the region selection pattern layer 102.
  • the misalignment with the region selection pattern layer 102 is 0, and the shape of both ends of the selected periodic array pattern indicated by 106 and 107 is the same as the shape of the pattern inside the region. . Therefore, the line widths at both ends are the same. In this example, four periodic array lines are formed.
  • FIG. 11 also illustrates a diagram equivalent to FIG. In the example of FIG. 11, only the outline 1101 of the opening of the region selection pattern is selectively shown for easy understanding.
  • a contour 1101 indicates an opening of the region selection pattern in a state where the region selection pattern is appropriately superimposed on the periodic arrangement pattern 1102 that is the selected pattern.
  • the lower diagram in FIG. 1 is an example in a case where a deviation of the overlay of the periodic arrangement pattern 108 and the region selection pattern 109 occurs.
  • Reference numeral 110 denotes a relative position of the periodic array pattern with respect to the region selection pattern 109. In this example, five lines, one more than four desired lines, are formed due to misalignment.
  • the contour 1103 shows the same state as the lower diagram of FIG.
  • the overlay error is measured by using a phenomenon that there are more than a predetermined number of selected patterns selected in the region selection pattern.
  • the periodic line pattern is calculated based on a comparison (difference calculation) of the pattern line width 111 located at the left end (on the side) and the pattern line width 112 located at the right end (the other end).
  • the overlay error of the area selection pattern can be calculated.
  • the boundary of the area selected by the area selection pattern when the dimension of the 101 line pattern is W (original dimension of the pattern), the pitch of the periodic array is twice W (2 W), and the overlay deviation is 0
  • the overlay is calculated by the following equation. In this case, it is assumed that the misalignment is smaller than ⁇ W.
  • the overlay is ⁇ W / 2 or less. Since this overlay deviation occurs due to fluctuations in the manufacturing process, in order to stabilize the process, it is necessary to employ the measurement method as described above and appropriately feed back the measurement result to the process.
  • an example is shown in which four lines in a periodic array are selected using a rectangular area selection pattern.
  • the shape of the area selection pattern and the number of patterns to be selected can be arbitrarily changed.
  • the pitch of the periodic array is twice the line pattern dimension W, but the overlap can be calculated in the same manner at other pitches.
  • the overlay in the X direction is measured using the line pattern of the periodic array in the vertical direction, but the overlay in the Y direction can also be measured by using the line pattern of the periodic array in the horizontal direction. it can.
  • the region selection pattern is located on the right side (positive side) from the desired position (for example, contour 1103), and WL ⁇ In the case of WR, it can be seen that the region selection pattern is located on the left side (negative side) from the desired position (for example, the contour 1104). Therefore, the shift direction information can be converted into data instead of the shift amount or the shift amount and the shift direction information together.
  • a measurement and inspection system including an arithmetic device that performs such calculations and outputs will be described below.
  • FIG. 2 is a schematic explanatory diagram of a measurement and inspection system in which a plurality of measurement or inspection devices are connected to a network.
  • the system has a configuration in which SEMs 201, 202, and 203 for measuring or inspecting pattern dimensions of semiconductor wafers and photomasks are connected to a network.
  • the network includes an image processing apparatus or pattern measurement that sets the measurement position, measurement conditions, etc. on the design data of the semiconductor device, and performs measurement and inspection based on the obtained SEM image.
  • a condition setting device 204 that also functions as a device, a semiconductor device design data, a simulator 205 that simulates the performance of a pattern based on the manufacturing conditions of a semiconductor manufacturing device, and the like
  • a storage medium 206 for storing design data in which layout data and manufacturing conditions are registered is connected.
  • the design data is expressed in, for example, the GDS format or OASIS format, and is stored in a predetermined format.
  • the design data may be of any type as long as the software that displays the design data can display the format format and can handle it as graphic data.
  • the storage medium 206 may be incorporated in the measuring device, the control device of the inspection device, the condition setting device 204, or the simulator 205.
  • the simulator 205 has a function of simulating the defect occurrence position based on the design data.
  • the SEMs 201, 202, and 203 are provided with respective control devices, and control necessary for each device is performed. These control devices are provided with setting functions such as the functions of the simulator and measurement conditions. You may make it mount.
  • an electron beam emitted from an electron source is focused by a plurality of stages of lenses, and the focused electron beam is scanned one-dimensionally or two-dimensionally on a sample by a scanning deflector. Scanned.
  • SE Secondary electrons
  • BSE backscattered electrons
  • each SEM control device performs the above control and the like, and images and signals obtained as a result of scanning the electronic beam are sent to the condition setting device 204 via the communication line network.
  • the control device for controlling the SEM and the condition setting device 204 are described as separate units.
  • the present invention is not limited to this, and the control and measurement of the device are performed by the condition setting device 204. Processing may be performed in a lump, or SEM control and measurement processing may be performed together in each control device.
  • condition setting device 204 or the control device stores a program for executing a measurement process, and measurement or calculation is performed according to the program.
  • the condition setting device 204 has a function of creating a program (recipe) for controlling the operation of the SEM based on semiconductor design data, and functions as a recipe setting unit. Specifically, desired measurement points, autofocus, autostigma, addressing points, etc. on design data, pattern contour data, or design data that has been simulated A position for performing processing necessary for the SEM is set, and a program for automatically controlling the sample stage, deflector, etc. of the SEM is created based on the setting.
  • a program for controlling the sample stage, deflector, etc. of the SEM is created based on the setting.
  • FIG. 3 is a schematic configuration diagram of a scanning electron microscope.
  • An electron beam 303 extracted from the electron source 301 by the extraction electrode 302 and accelerated by an accelerating electrode (not shown) is squeezed by a condenser lens 304 which is a form of a focusing lens, and then is scanned by a scanning deflector 305.
  • 309 is scanned one-dimensionally or two-dimensionally.
  • the electron beam 303 is decelerated by a negative voltage applied to an electrode built in the sample stage 308 and is focused by the lens action of the objective lens 306 and irradiated onto the sample 309.
  • secondary electrons and electrons 310 such as backscattered electrons are emitted from the irradiated portion.
  • the emitted electrons 310 are accelerated in the direction of the electron source by the acceleration action based on the negative voltage applied to the sample, and collide with the conversion electrode 312 to generate secondary electrons 311.
  • the secondary electrons 311 emitted from the conversion electrode 312 are captured by the detector 313, and the output of the detector 313 changes depending on the amount of captured secondary electrons.
  • the brightness of the display device changes according to this output.
  • an image of the scanning region is formed by synchronizing the deflection signal to the scanning deflector 305 and the output of the detector 313.
  • the scanning electron microscope illustrated in FIG. 8 includes a deflector (not shown) that moves the scanning region of the electron beam.
  • This deflector is used to form images of patterns having the same shape existing at different positions.
  • This deflector is also referred to as an image shift deflector, and enables movement of the field of view (Field of View: FOV) of the electron microscope without moving the sample by the sample stage.
  • the image shift deflector and the scanning deflector may be a common deflector, and the image shift signal and the scanning signal may be superimposed and supplied to the deflector.
  • the control device 314 controls each component of the scanning electron microscope, and forms a pattern based on the detected electrons and a pattern formed on the sample based on the detected electron intensity distribution called a line profile. -It has a function to measure the size of the screen.
  • a storage unit 407 is provided.
  • the pattern information setting unit 402 can set the number of periodic array patterns to be measured, the array, the size of the region selection pattern, and the like based on input or preset conditions.
  • the template setting unit 403 creates a template by cutting out a part of an image obtained by a scanning electron microscope, design data, and a part of a pattern image obtained from an exposure simulator.
  • the template created by the template setting unit 403 is stored in the template storage unit 406 or the recipe storage unit.
  • the pattern arrangement and size calculation unit 404 performs pattern matching based on the templates created by the pattern information setting unit 402 and the template setting unit 403, and calculates the pattern arrangement and the pattern size.
  • the overlay calculator 405 calculates the overlay based on the result of the pattern array and size calculator 404. At this time, it is also possible to consider the difference between the number of patterns, the size of the end of the region, and the size inside the region as the calculation.
  • the image processor 401 may be integrated with the SEM control device, or may be an image processor separate from the SEM connected to the SEM via a network.
  • FIG. 5 shows a flowchart for overlay measurement.
  • the number of patterns selected in the first step is confirmed (S1), and it is determined whether or not the pattern matches the pattern registered in the recipe.
  • This number can also be set in advance as a measurement condition.
  • the number of the patterns 501 when the overlay error is 0 is 4, and when the overlay error is large (502), the number of lines is increased by 1 to 5 lines. If it is determined that the number is measurable, the dimensions (WL, WR) at both ends of the periodic array pattern are measured (S2). The overlap is calculated from the comparison of WL and WR and the pattern information registered in the recipe (S3).
  • FIG. 12 is a flowchart for explaining in more detail the process of measuring the overlay error
  • FIG. 13 is a diagram for explaining the specific configuration of the arithmetic unit for measuring the overlay error.
  • a semiconductor device semiconductor wafer
  • the recipe control program for controlling the scanning electron microscope
  • the object to be measured is controlled by controlling the sample stage 308 and the deflector that deflects the irradiation position of the electron beam.
  • the field of view Field of View: FOV
  • FOV Field of View
  • an image (SEM image) of the measurement target pattern is acquired based on a signal obtained by scanning the measurement target pattern with an electron beam (step 1203).
  • the pattern number counting unit 1302 measures the number of periodic array patterns (step 1302). The number of patterns is measured, for example, by obtaining a luminance profile for a predetermined area and counting the number of peaks exceeding a predetermined threshold, thereby counting the number of patterns, or pixels having a predetermined luminance appearing by binarization processing Various methods such as a method of counting the number of aggregates can be applied.
  • the process proceeds to the next step without measuring the overlay error.
  • a predetermined number of patterns are selected, when overlay error is measured, the relative position with other reference patterns is measured, and compared with the reference value, An alignment error measurement may be performed.
  • the measurement result of the number of patterns in the predetermined area is the predetermined number n + 1 (5 in the example of FIG. 1, that is, other than the specified number)
  • the dimension measuring unit 1303 is positioned at one end in the arrangement direction of the periodic arrangement pattern.
  • the dimension measurement of the pattern to be performed and the pattern located at the other end is executed (step 1205).
  • the SEM image acquired in step 1203 may be used, or based on the detection signal obtained by positioning the field of view on each of the one end pattern and the other end pattern.
  • the pattern dimension may be measured. In order to obtain a more accurate dimensional value, it is desirable to select the latter that allows measurement at a high magnification.
  • the dimension measuring unit 1303 executes pattern dimension measurement based on the distance between peaks or the peak width of the luminance profile of the pattern to be measured, and the visual field size information.
  • the deviation direction / deviation amount calculation unit 1304 specifies the deviation direction based on the comparison between the pattern on the one end side and the pattern on the other end side, and calculates the deviation amount using Equation 1, Equation 2, and the like. Calculate (step 1206).
  • the deviation direction / deviation amount calculation unit 1304 determines whether to obtain the overlay error using Expression 1 or to obtain the overlay error using Expression 2, depending on the direction of deviation (result of the difference calculation). . If the measurement result of the number of patterns in step 1204 is other than n, n + 1, or the count itself cannot be performed, there is a possibility that a pattern defect other than the overlay error has occurred, or that the electron microscope image is appropriate. Since it may not be formed, the pattern number counting unit 1302 outputs error information (step 1207).
  • the process returns to step 1202. If there is no other measurement target pattern, the pattern number counting unit 1302 and the shift direction / shift amount calculation unit.
  • the measurement result or calculation result obtained by 1304 is output to an output medium such as a display device or stored in a storage medium or the like (step 1208).
  • the deviation distribution information calculation unit 1305 may calculate an index value indicating a tendency of deviation. For example, if the misalignment direction and amount are almost the same at multiple overlay error measurement positions, it is considered that overlay misalignment in a specific direction has occurred, but the misalignment direction and amount are not uniform.
  • the region selection pattern or the semiconductor wafer may be deformed. Further, there is a possibility that a rotational deviation has occurred between the region selection pattern and the periodic arrangement pattern.
  • a discrete deviation such as a simple overlay deviation, a rotational deviation, or a pattern deformation.
  • the region selection pattern edge for selecting the region of the periodic arrangement pattern is arranged in the middle of the selection region and the non-selection region.
  • the region selection pattern 604 A case where the ends are arranged at the pattern center of the periodic arrangement pattern 601 will be described.
  • the dimension of the line pattern 601 is set to W and the pitch of the periodic arrangement is set to twice W as in the first embodiment.
  • Reference numeral 603 denotes a relative position of the periodic arrangement pattern layer to the region selection pattern layer 602.
  • the misalignment with the region selection pattern layer 602 is zero, and the shape of both ends of the selected periodic array pattern indicated by 606 and 607 is half the size of the pattern inside the region. . Therefore, the line widths at both ends are the same. In this example, five lines are formed, and a part of the pattern at both ends of the periodic array pattern is missing.
  • the lower diagram in FIG. 6 is an example in the case where a deviation of the overlay between the periodic arrangement pattern 608 and the region selection pattern 609 occurs.
  • Reference numeral 610 denotes a relative position of the periodic arrangement pattern with respect to the region selection pattern 609.
  • the misalignment between the region selection pattern layer 609 and the periodic arrangement pattern layer 610 is caused by the pattern size WL of the patterns 612 and 613 at the left and right ends of the pattern layer 611 formed by the process of superimposing 608 and 609. , WR, and is calculated by Equation 3.
  • the overlay deviation is smaller than ⁇ W.
  • Overlay deviation (WR-WL) / 2 Equation 3
  • the overlay size is W / 2 to W.
  • Example 3 describes an example of applying a periodic array pattern formed by DSA.
  • FIG. 7 is a diagram illustrating a sample state in which a region selection pattern (upper layer) for selecting a part thereof is superimposed on a plurality of patterns (lower layer) generated by a patterning method using a self-guided organization phenomenon. It is.
  • the DSA line pattern forms a guide pattern (701) having different chemical properties formed by lithography in the lower layer region 702.
  • a periodic array pattern (703) by DSA is generated.
  • the DSA pattern period is 1/3 of the period of the lower layer guide pattern, and two lines (705) are arranged at equal intervals between the lines (704) formed on the lower layer guide line.
  • the relative position or size of the DSA pattern varies depending on the relative position on the guide or from the guide. Therefore, the dimensional difference between both ends of the pattern formed by the periodic array pattern and the region selection pattern is greatly affected by the variation.
  • the area selection pattern (706) can be improved in accuracy by making it the same size or an integer multiple of the periodic arrangement of the guides. In this example, 706 has the same size as the periodic arrangement of the lower layer guide patterns.
  • Example 4 describes an example of applying a periodic array pattern formed by SAQP.
  • FIG. 8 is a diagram showing a sample state in a state where a region selection pattern (upper layer) for selecting a part thereof is superimposed on a plurality of patterns (lower layer) generated by SAQP.
  • the SAQP line pattern first forms a dummy pattern (801) formed by lithography.
  • the arrangement period of the periodic arrangement pattern (802, 803, 804, 805) by SAQP is 1/4 of the period of the dummy pattern.
  • the relative position of the line or its size differs for each relative arrangement from the dummy pattern.
  • the area selecting pattern (806) can be improved in accuracy by making it the same size or an integer multiple of the dummy pattern periodic array.
  • 806 is the same size as the periodic pattern of dummy patterns.
  • FIG. 9 is a diagram illustrating a sample state in which a region selection pattern (upper layer) for selecting a part thereof is superimposed on a periodically arranged hole pattern (lower layer).
  • the hole pattern of the periodic array is generated not only by DSA but also by making the periodic array pattern of SAMP orthogonal.
  • the region selection pattern (902, 903) is used for the periodically arranged hole pattern (901).
  • the area selection pattern 902 is an example in which holes on the left and right ends of the pattern area are not missing
  • the area pattern 903 is an example in which holes on the left and right edges of the pattern area are missing. This is similar to the example of the line pattern of the first and second embodiments.
  • the left and right sides are missing depending on the overlap of the hole pattern (901) of the periodic arrangement and the region selection pattern (902, 903).
  • the overlapping of the size WL and WR of the end hole pattern (904, 905) is calculated.
  • the example in which the region selection pattern edge for selecting the region of the periodic arrangement pattern is arranged in the middle of the selected region and the non-selected region or at the pattern center is shown.
  • the width of the working pattern is an integral multiple of the pitch size of the periodic array pattern.
  • the width of the region selection patterns 1003 and 1004 is set to be about 1 ⁇ 2 of the pattern width larger than the integral multiple of the width of the periodic array pattern 1001.
  • the dimension of the periodic array line pattern 1001 is W and the pitch of the periodic array is twice W as in the first embodiment.
  • the misalignment with the region selection pattern layer 1002 is 0, and the shape of the both ends of the selected periodic array pattern indicated by 1005 is the same as the inside of the region, and is indicated by 1006
  • the shape of both ends of the selected periodic array pattern is about 3/4 of the size of the pattern inside the region. Therefore, the line widths at both ends are the same.
  • the range of misalignment that can be measured is reduced, but the same calculation method is used for overlapping. The sum can be calculated.
  • the width of both end portions 1006 of the selected periodic array pattern is thicker than the line width of the second embodiment, so that the margin for the collapse of the formed pattern is improved and the measurement accuracy is improved.

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  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

Le but de la présente invention est de fournir un dispositif de mesure de motifs pour effectuer une évaluation de superposition d'un motif de sélection de région et d'un motif sélectionné qui est sélectionné par le motif de sélection de région. La présente invention concerne un dispositif de mesure de motifs pour déterminer une erreur de superposition. Le dispositif de mesure de motifs obtient, à partir de signaux obtenus sur la base d'un balayage de faisceau de particules chargées d'un échantillon ayant un agencement d'une pluralité de motifs, une première valeur de mesure d'un premier motif positionné à une extrémité de la pluralité de motifs, et une seconde valeur de mesure d'un second motif positionné à l'autre extrémité de la pluralité de motifs, et détermine la direction et/ou la quantité de déplacement de la superposition déplacée de la première couche et de la seconde couche sur la base d'une comparaison de la première valeur de mesure et de la seconde valeur de mesure.
PCT/JP2016/052561 2016-01-29 2016-01-29 Dispositif de mesure de motifs et programme informatique WO2017130366A1 (fr)

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TWI723930B (zh) * 2019-08-23 2021-04-01 日商日立全球先端科技股份有限公司 重疊計測系統及重疊計測裝置

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JPH1144664A (ja) * 1997-07-29 1999-02-16 Matsushita Electron Corp 重ね合わせ測定方法及び測定装置及び測定パターン
JP2001332470A (ja) * 2000-05-19 2001-11-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
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JP2009115788A (ja) * 2007-10-10 2009-05-28 Asml Netherlands Bv ダブルパターニング基板のオーバレイ測定
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JPH1144664A (ja) * 1997-07-29 1999-02-16 Matsushita Electron Corp 重ね合わせ測定方法及び測定装置及び測定パターン
JP2001332470A (ja) * 2000-05-19 2001-11-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
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TWI723930B (zh) * 2019-08-23 2021-04-01 日商日立全球先端科技股份有限公司 重疊計測系統及重疊計測裝置

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