WO2017032356A1 - Power semiconductor device module having a pressure plate that forms a basin - Google Patents
Power semiconductor device module having a pressure plate that forms a basin Download PDFInfo
- Publication number
- WO2017032356A1 WO2017032356A1 PCT/DE2016/000328 DE2016000328W WO2017032356A1 WO 2017032356 A1 WO2017032356 A1 WO 2017032356A1 DE 2016000328 W DE2016000328 W DE 2016000328W WO 2017032356 A1 WO2017032356 A1 WO 2017032356A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power semiconductor
- pressure plate
- thermally conductive
- semiconductor device
- heat
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000004382 potting Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 210000004197 pelvis Anatomy 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract 3
- 238000007639 printing Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Definitions
- the present invention relates to a power semiconductor device module for attachment to a heat sink and to an arrangement of both.
- This comprises means for so-called pressure contacting of the power semiconductor component.
- pressure contacts have been developed for contacting high-voltage-resistant and high-current resistant components.
- high-voltage-resistant semiconductor components are high-voltage thyristors, which are the central components in high-voltage converters for the distribution of electrical energy. Especially for such systems, high demands are placed on the reliability of the components.
- the power semiconductor devices or the like are contacted on a carrier receiving the electronic components by spring-biased pressure contacts or the like.
- the production and maintenance of a mechanical and thus electrical contact between a contact region of an electronic component and a current-carrying contact is essentially carried out by the mechanically applied forces.
- This has the advantage that by a corresponding adjustment of the mechanical forces - for example, by means of tensioning devices or spring devices - the thermal exchange loads due to the associated with this mechanical fixation mechanical tolerances can be sufficiently taken into account.
- the semiconductor device is also in thermally conductive contact with a heat sink to avoid possible damage due to overheating.
- a heat sink By means of the heat sink, the size of the heat-emitting surface is increased and thus the heat transfer from the semiconductor device to the surrounding medium, such as air, is improved.
- a solid metallic pressure-receiving plate is present, which is on the one hand in thermal contact with the semiconductor device and on the other hand with the heat sink.
- the pressure-receiving plate also called pressure plate, not only serves the heat transfer between the power semiconductor device
- the present invention has the object to provide a power semiconductor device module for attachment to a heat sink and a respective arrangement of both, by means of which the heat transfer between the power semiconductor device and heat sink is improved or ensured and in particular the power semiconductor module easily shed with a potting compound can be.
- This object is achieved by a module with the features of claim 1.
- particularly advantageous embodiments of the invention disclose the dependent claims. An equally advantageous use and a mounting method are each the subject of the independent claims. It should be noted that the features listed individually in the claims can be combined with each other in any technically meaningful manner and show further embodiments of the invention. The description additionally characterizes and specifies the invention, in particular in connection with the figures.
- the present invention relates to a power semiconductor device module, hereinafter also referred to as module for short, for attachment to a heat sink, so couple the waste heat of at least one power semiconductor device in the heat sink.
- the invention is not limited.
- it is a silicon controlled rectifier (SCR), power regulator, power transistor, insulated gate bipolar transistor (IGBT), metal oxide semiconductor field effect transistor (MOSFET), power rectifier, a diode such as a Schottky diode, a J-FET, a thyristor, for example Gate turn-off thyristor, a gate-communicated thyristor, a TRIAC, a DIAC or a Fotothyristor is.
- SCR silicon controlled rectifier
- IGBT insulated gate bipolar transistor
- MOSFET metal oxide semiconductor field effect transistor
- the at least one power semiconductor component has a disc-shaped form, wherein one of the flat main sides should face the heat sink.
- the power semiconductor components are interconnected, for example, as a half bridge, full bridge or three-phase bridge.
- further contacting means are provided for electrically contacting the at least one power semiconductor component.
- the contacting means are at least partially disposed between the biasing means described below and the power semiconductor device.
- the contacting means have at least one areal contact area for contacting the component and are formed at the other end in accordance with the desired connection technology, for example as a male plug contact and / or screw connection.
- a pressure plate which is at least partially thermally conductive is also provided.
- the pressure plate is formed only in one or more areas thermally conductive or completely thermally conductive.
- the plate is at least partially or completely made of a metal and / or a metallic alloy and / or a ceramic.
- the pressure plate preferably has at least one or more heat-conducting regions, aluminum or copper or an aluminum nitride ceramic.
- the plate is made of a plastic material, such as a thermoplastic, which has metallic particles in or in the heat-conducting regions.
- the printing plate is made of a ductile, thermally conductive material, such as copper.
- the comparatively high ductility of the printing plate compared to the materials which are adjacent to the printing plate.
- zenden elements such as heatsink or the later-described electrically insulating intermediate plate can be used, improves the heat transfer between the heat sink and power semiconductor device, since the ductile material is able to compensate for unevenness in the contact area due to its higher plasticity.
- biasing means are provided which are designed to bias the contacting means against the power semiconductor component for electrical contacting and the power semiconductor component against the at least one heat-conducting region of the pressure plate, preferably in the direction of the heat sink, for thermal contacting.
- the biasing means both the function of the electrical pressure contact and the thermal contact between the power semiconductor device and the pressure plate, or the heat sink by these are arranged, for example, that after mounting the power semiconductor device clamped the contacting between the heat sink and the biasing means are.
- fastening means for fixing the biasing means are provided on the heat sink, wherein the fastening means include the at least partially thermally conductive pressure plate.
- the at least partially thermally conductive pressure plate forms at least one basin surrounding the power semiconductor component or optionally all power semiconductor components.
- the pool is understood to mean a receptacle with a bottom and a circumferential wall, wherein the power semiconductor component is arranged in the receptacle.
- the circumferential wall leads to a mechanical stabilization of the pressure plate, so that in particular the material thickness of the pressure plate in the area provided for the arrangement between the power semiconductor component and the heat sink for better heat dissipation. mensübergang can be reduced without the mechanical stability of the printing plate is jeopardized especially when used as an abutment for the biasing means.
- the components in particular the power semiconductor components in the housing are coated by a soft potting compound (eg a silicone gel belonging to the group of cold-vulcanizing two-component silicone elastomers) and protected with it. It may also be provided a coating of epoxy resin.
- a soft potting compound eg a silicone gel belonging to the group of cold-vulcanizing two-component silicone elastomers
- the circumferential wall and the resulting stabilization, in particular also with respect to a bending stress by the biasing means thus prevents bending at a comparatively small dimensions and good thermal conductivity in the coupling to the heat sink, so that it ultimately not due to mechanical deformation to affect the thermal Coupling to the heat sink comes.
- the high mechanical stability of the pressure plate furthermore ensures, in one embodiment, reliable attachment of the biasing means to the heat sink via the pressure plate.
- the pressure plate in turn is fastened for example with screws to the heat sink.
- the pressure plate has a seat on its side facing the power semiconductor component, for example for the power semiconductor component and / or an electrically insulating intermediate plate and / or the contacting means provided between the power semiconductor component and the pressure plate.
- the seat coincides with one of the heat-conducting regions.
- the heat-conducting region is preferably designed such that it has a cross-section which is almost identical to the surface of the power semiconductor component provided for the heat coupling.
- the heat-conducting region is circular.
- the seat is preferably designed as a play or press fit for the power semiconductor component and / or the electrically insulating intermediate plate and / or the contacting means.
- the seat is provided, for example, by a plurality of webs formed by the pressure plate. More preferably, the seat is formed by a countersunk, for example, a sunken against the surrounding surface of the printing plate in the range of 0.5 to 2 mm contact surface. In one embodiment, combinations of webs and countersunk contact surface are provided.
- the biasing means comprise a plate spring or a flat spring.
- the module further comprises the aforementioned thermally conductive, electrically insulating intermediate plate for the arrangement between the power semiconductor component and the heat sink.
- the plate is made substantially or entirely of an aluminum nitride ceramic.
- the bias voltage is adjustable.
- the biasing means comprise, for example, at least one screw connection.
- the pressure for thermal and electrical contacting with the line semiconductor component to the heat sink or the Kunststofftechniksmit- tel on the device abut by the biasing means, for example by means of the screw, on and / or readjusted.
- the invention further relates to an arrangement of a module in one of the previously described advantageous embodiments and a heat sink, for example a fin heat sink.
- a heat sink for example a fin heat sink.
- This consists for example of aluminum.
- the invention further relates to the use of the module for switching, regulating and / or rectifying electrical current, in particular currents up to 800 A and voltages up to 3600 V.
- Fig. 1 is a side perspective view of the printing plate 1 according to the invention in one embodiment
- FIG. 2 shows a perspective side view of a further embodiment of the printing plate 1 according to the invention, with lower contact means inserted therein;
- FIG. 3 shows a perspective side view of the embodiment of the printing plate 1 according to the invention shown in FIG. 1, with power semiconductor components and completed contacting means inserted therein;
- FIG. 4 shows a perspective side view of the embodiment of the printing plate 1 according to the invention shown in FIG. 1, with power semiconductor components inserted therein and completed biasing means;
- Fig. 5 is a perspective view of a module 10 according to the invention, which was completed by placing a hood on the pressure plate 1 shown in Fig. 4 and fixed on a heat sink.
- FIG. 1 shows in detail a pressure plate 1 of the module 11 according to the invention shown in FIG. 6, which is a part of the fastening means with which the module 11 shown in FIG. 6 is fastened to a heat sink, not shown, by a surface 8, namely the side facing away from the viewer in Figure 1, is applied to the heat sink.
- the surface 8 is generally planar.
- the pressure plate 1 is made of aluminum and in a molding casting process and has, in addition to a bottom 10, a circumferential, integrally connected to the bottom wall 10 3.
- the Pressure plate 1 is made of aluminum, it is completely thermally conductive. Consequently, the pressure plate 1 in the present case is not only partially thermally conductive.
- This wall 3 represents a mechanical stiffening of the pressure plate 1, so that the bottom 10 can be comparatively thin.
- the wall 3 defines a basin-shaped recess 9, which is separated in the present case by a, not the height of the wall reaching gutter 5 in two, respectively provided for a single power semiconductor device chambers.
- the basin 9 also serves to receive a potting compound, not shown.
- holes 4 are introduced, which serve for the attachment of biasing means, which are explained in more detail with reference to FIG 4.
- a seat 2, 6 is formed in the pressure plate 1.
- the seat is formed on the one hand by a round depression 2 in the surface defined by the bottom 10 and by pairs of diametrically opposed webs 6 and serve in total the determination and positioning of an adjacent to the pressure plate 1 insulating and a part 11 of the contacting means, as shown in FIG 2 shown.
- FIG. 2 shows a further embodiment of a pressure plate 1 according to the invention, in which the design of the webs 6 from FIG. 1 has been dispensed with.
- FIG. 3 shows an assembly state in which two power semiconductor components 12 are inserted into the basin 9 and the load 11 and control connection elements 16 are completed with contacting means 11, 16.
- the biasing means 13, 14 are mounted.
- one power element 12 is provided with this element 12 and an overlying plate spring 19 cross-plate 14 which bias by means of screws 13 which engage in the holes 4 of the pressure plate 1, the power semiconductor 12 against the pressure plate 1 in the direction of the heat sink, not shown, to To ensure both electrical and thermal contact by means of pressure contact. Due to the screws 13, the bias is adjustable.
- FIG. 5 shows the module 20 finished after encapsulation with a potting compound, not shown, and after covering the pressure plate 1 with a hood 15.
- the hood 15 has openings, so that the load connections 11 and the control connections 16 remain electrically contactable from the outside.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112016003856.9T DE112016003856A5 (en) | 2015-08-25 | 2016-08-24 | Power semiconductor module with a pressure plate forming a basin |
RU2018110060A RU2693521C1 (en) | 2015-08-25 | 2016-08-24 | Module of power semiconductor element with reservoir forming pressure plate |
CN201690001177.6U CN208093538U (en) | 2015-08-25 | 2016-08-24 | Power semiconductor assembly module with the pressure plare for constituting basin body |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEDE102015114046.2 | 2015-08-25 | ||
DE102015114046 | 2015-08-25 |
Publications (1)
Publication Number | Publication Date |
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WO2017032356A1 true WO2017032356A1 (en) | 2017-03-02 |
Family
ID=57256010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2016/000328 WO2017032356A1 (en) | 2015-08-25 | 2016-08-24 | Power semiconductor device module having a pressure plate that forms a basin |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN208093538U (en) |
DE (1) | DE112016003856A5 (en) |
RU (1) | RU2693521C1 (en) |
WO (1) | WO2017032356A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11063495B2 (en) | 2019-07-01 | 2021-07-13 | Nidec Motor Corporation | Heatsink clamp for multiple electronic components |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4068368A (en) * | 1975-10-14 | 1978-01-17 | The Bendix Corporation | Closure for semiconductor device and method of construction |
DE2728564A1 (en) * | 1977-06-24 | 1979-01-11 | Siemens Ag | SEMICONDUCTOR COMPONENT |
EP0027629A1 (en) * | 1979-10-19 | 1981-04-29 | Siemens Aktiengesellschaft | Semiconductor component with at least one or several semiconductor bodies |
JPS6074462A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
JPS6074461A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2942409A1 (en) * | 1979-10-19 | 1981-04-23 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT WITH SEVERAL SEMICONDUCTOR BODIES |
DE3005313C2 (en) * | 1980-02-13 | 1986-05-28 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Semiconductor device |
EP0138048B1 (en) * | 1983-09-29 | 1993-12-15 | Kabushiki Kaisha Toshiba | Press-packed semiconductor device |
WO2013145619A1 (en) * | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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2016
- 2016-08-24 DE DE112016003856.9T patent/DE112016003856A5/en active Pending
- 2016-08-24 CN CN201690001177.6U patent/CN208093538U/en active Active
- 2016-08-24 RU RU2018110060A patent/RU2693521C1/en active
- 2016-08-24 WO PCT/DE2016/000328 patent/WO2017032356A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4068368A (en) * | 1975-10-14 | 1978-01-17 | The Bendix Corporation | Closure for semiconductor device and method of construction |
DE2728564A1 (en) * | 1977-06-24 | 1979-01-11 | Siemens Ag | SEMICONDUCTOR COMPONENT |
EP0027629A1 (en) * | 1979-10-19 | 1981-04-29 | Siemens Aktiengesellschaft | Semiconductor component with at least one or several semiconductor bodies |
JPS6074462A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
JPS6074461A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11063495B2 (en) | 2019-07-01 | 2021-07-13 | Nidec Motor Corporation | Heatsink clamp for multiple electronic components |
Also Published As
Publication number | Publication date |
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RU2693521C1 (en) | 2019-07-03 |
CN208093538U (en) | 2018-11-13 |
DE112016003856A5 (en) | 2018-05-03 |
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