JPS6074461A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6074461A JPS6074461A JP58181284A JP18128483A JPS6074461A JP S6074461 A JPS6074461 A JP S6074461A JP 58181284 A JP58181284 A JP 58181284A JP 18128483 A JP18128483 A JP 18128483A JP S6074461 A JPS6074461 A JP S6074461A
- Authority
- JP
- Japan
- Prior art keywords
- internal connection
- semiconductor element
- connection terminals
- common
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
- H01L2023/4025—Base discrete devices, e.g. presspack, disc-type transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4081—Compliant clamping elements not primarily serving heat-conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はトランジスタやザイリスタ等の大電力用素子か
らなる半導体装置に係り、特に圧接型モジュールに使用
される半導体装置ＶＣ関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device comprising a high power element such as a transistor or a Zyristor, and particularly to a semiconductor device VC used in a press-contact type module.
従来、大電力用のモノ。５２−ルとして例えば第１図に
示すトランジスタモジュールがある。同図例おいで、Ｌ
はノＲワートランソスク１ノ及びダイオード１２からな
る第１のトランジスタ複合体、互は同じくパワートラン
ジスタ１３及びダイオードＩ４からなる第２のトランジ
スタ複合体である。このトランジスタモジュールハ、こ
れら第１及び第２のトランジスタ複合体り。Traditionally, things used for high power. For example, there is a transistor module shown in FIG. 1 as a 52-rule. Come on, L.
is a first transistor complex consisting of a power transistor 13 and a diode 12, and a second transistor complex also consisting of a power transistor 13 and a diode I4. This transistor module is a composite of these first and second transistors.
互をそれぞれ絶縁基板１５．１６を介して共通の金属基
板１７に接着させると共に、これらのトランジスタ複合
体１．２を取り囲み収容する共通のパッケージ１８の上
方に、泥１のトランジスタ複合体りのコレクタ電極端子
１９、第１のトランジスタ複合体ｌのエミッタ電極端子
２゜と接続した第２のトランジスタ複合体そのコレクタ
電極端子２ノ、及び第２のトランジスタ複合体ｌのエミ
ッタ電極端子２２をそれぞれ導出して配列したものであ
る。The collectors of the transistor complexes 1.2 are bonded to a common metal substrate 17 via insulating substrates 15, 16 respectively, and above a common package 18 surrounding and accommodating these transistor complexes 1.2. Deriving the electrode terminal 19, the collector electrode terminal 2 of the second transistor complex connected to the emitter electrode terminal 2 of the first transistor complex l, and the emitter electrode terminal 22 of the second transistor complex l, respectively. This is the arrangement.
上記構成により、このトランジスタモジュールにおいて
は、電気装置への組立てが容易であり、組立時のスペー
スも小さくなり、軽量化が達成できるものである。With the above configuration, this transistor module can be easily assembled into an electric device, requires less space during assembly, and is lightweight.
しかしながら、従来のトランジスタモジュールには次の
ような欠点があった。すなわち、第１のトランジスタ複
合体り及び第２のトランジスタ複合体考の各エミッタ電
極及びカンート電極からの接続をボンディングや半田伺
げにより取り出しそいるため、大電流、例えば１００Ａ
以上のトランジスタモジュールにあっては、ボンディン
グ等の接続個所に電流が集中することになる。このため
、熱歪、熱疲労等が生じ、大電力化が困難であった。さ
らに、ボンディング等の接続個所で過電流による破壊が
生じると、パッケージの外へシリコンの溶融物が噴き出
寸一種の爆発等が起きる危険性があった。また、共通の
金属基板１７’と共通のパッケージ１８及び外部電極端
子とを同時に樹脂接着材で封止していたため、各々の材
料の熱膨張係数の差によりクラック等が入りやすく、封
止が困卸であった。However, conventional transistor modules have the following drawbacks. In other words, since the connection from each emitter electrode and cant electrode of the first transistor complex and the second transistor complex cannot be taken out by bonding or soldering, a large current, for example 100A, is required.
In the above transistor module, current is concentrated at connection points such as bonding. As a result, thermal distortion, thermal fatigue, etc. occur, making it difficult to increase the power consumption. Furthermore, if damage occurs due to overcurrent at a connection point such as bonding, there is a risk that molten silicon will spew out of the package and cause a type of explosion. In addition, since the common metal substrate 17', the common package 18, and the external electrode terminals were simultaneously sealed with a resin adhesive, cracks were likely to occur due to the difference in the coefficient of thermal expansion of each material, making sealing difficult. It was a wholesaler.
本発明は上記実情に鑑みてなされたもので、その目的は
、複数の半導体素子の電極及び素子間の接続個所への電
流集中を防止し、信頼性に優れた半導体装置を提供する
ことにある。The present invention has been made in view of the above-mentioned circumstances, and an object thereof is to prevent current concentration at the electrodes of a plurality of semiconductor elements and the connection points between the elements, and to provide a semiconductor device with excellent reliability. .
本発明は、放熱を兼ねる支持基体と、この支持基体上に
配設された共通絶縁板と、この共通絶縁板上に載置され
る複数の圧接型の半導体素子構体と、前記支持基体上に
設けられ前記半導体素子構体を覆う蓋体と、前記複数の
半導体素子構体にそれぞれ電気的に接続される複数の共
−Ａｆ１電極と、前記蓋体内において、それぞれ対応す
る前記半導体素子構体と前記共通電極とを加圧接続さぜ
る複数のばね構体と、前記共通“電極にそれぞれ圧接面
に対して直角方向圧折り曲げ形成して設けられ、隣り合
う前記共通電極間で相対向する複数の内部接続端子と、
前記相対向する内部接続端子間を電気的に接続固定する
手段とを具備し、前記複数の共通電極をそれぞれ別個に
対応する前記半導体素子構体に加圧接続し、しかる後前
記相対向する内部接続端子間を電気的に接続し固定する
ものである。The present invention provides a support base that also serves as heat dissipation, a common insulating plate disposed on the support base, a plurality of press-contact type semiconductor element structures placed on the common insulating plate, and a lid body provided to cover the semiconductor element structure; a plurality of common Af1 electrodes each electrically connected to the plurality of semiconductor element structures; and a corresponding one of the semiconductor element structure and the common electrode in the lid body; a plurality of spring structures for pressurizing and connecting the common electrodes, and a plurality of internal connection terminals that are provided on the common electrodes by being bent and bent in a direction perpendicular to the pressure contact surface, and that are opposed to each other between the adjacent common electrodes. and,
a means for electrically connecting and fixing the opposing internal connection terminals, and connecting the plurality of common electrodes to the respective corresponding semiconductor element structures under pressure, and then connecting the opposing internal connection terminals to each other under pressure. It electrically connects and fixes terminals.
以下、図面を診照して本発明の一実施例を説明する。第
２図は本発明を圧接型のザイリスタモジュールに適用し
た例を示す平面図、第３図は同じく部分断面図である。Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a plan view showing an example in which the present invention is applied to a press-contact type Zyristor module, and FIG. 3 is a partial sectional view of the same.
第２図及び第３図において、３１は熱的に良導体である
金ス・１６製の例えばアルミダイキャスト製の放熱基板
である３゜この放熱基板３１の内側には電気的に絶縁さ
れ、後述の各半導体素子３５ａ、３５ｂＶｃ共通なセラ
ミック板３２が載置されている。このセラミック板３２
上には、臼Ａ４図に）：１ｙり出して示すような例えば
銅Ｃｏで形成された２つのアノード電極、？ 、？ ａ
、 ３３ ｂがそれぞれ所定の位置に載置されている
。In FIGS. 2 and 3, reference numeral 31 denotes a heat dissipation board made of gold steel 16, which is a good thermal conductor, for example, die-cast aluminum. A ceramic plate 32 common to each of the semiconductor elements 35a and 35bVc is mounted. This ceramic plate 32
Above are two anode electrodes made of copper Co, for example, as shown in Fig. A4): 1y extended. ,? a
, 33b are placed at predetermined positions.
これらアノード１１Ｌ極３３ ａ 、 ；？ ３ｂはそ
、！１ぞれ圧接面に対して直角方向に訪り曲げ形成した
外部接続端子、３４ ａ 、 、？ ４ ｂを有してお
り、これら外部接続端子、？ ４ ａ 、 ３４ ｂは
共に後述の蓋体５ノから上方に導出されている。アノー
ド電極、９．９ ａ 、 ３３ ｂ上にはそれぞれ」辻
す゛イリスタからなる半導体素子３５ ａ 、 ３５
ｂが載１１７１′されている。これら半導体素子、？
５ ａ 、 ３５ ｂ上にはそれぞれ例えば銅で形成さ
れたカソード盤３６ａ、３６ｂが載置されている。これ
らカソード盤３６ａ、３６ｂは共に、第５図に取り出し
て示すように、ケ８〜トリード３７．絶縁ガイド体３８
及びスプリングばね３９が取り付けられており、スプリ
ングばね３９の弾性力により半導体素子３５ａ、３５ｂ
のダート電極とゲートリード３７が接触できるようにな
っている。These anodes 11L poles 33a;? 3b is so! 1. External connection terminals 34 a, , ?, each bent in a direction perpendicular to the press contact surface. 4b, and these external connection terminals, ? Both 4a and 34b are led out upward from the lid 5, which will be described later. On the anode electrodes 9.9a, 33b are semiconductor elements 35a, 35, each consisting of a cross iris resistor.
b is listed 1171'. These semiconductor elements?
Cathode plates 36a and 36b made of copper, for example, are placed on the plates 5a and 35b, respectively. Both of these cathode plates 36a and 36b are shown in Fig. 8 to Toledo 37. Insulated guide body 38
and a spring 39 are attached, and the elastic force of the spring 39 causes the semiconductor elements 35a, 35b to
The dart electrode and the gate lead 37 can come into contact with each other.
カソード盤３６ｇ 、３６ｂ上にはそれぞれカソード電
極４０ａ、４０ｂが載置されている。一方のカソード電
極４０ｂは、第４図に示すように上記アノード電極３３
ａ、３３ｂと同様に、圧接面に対して直角方向に折り曲
げ形成した外部接続端子４１ａを有しており、この外部
接続端子４１ａも蓋体５ノから上方に導出されている。Cathode electrodes 40a and 40b are placed on the cathode plates 36g and 36b, respectively. One cathode electrode 40b is connected to the anode electrode 33 as shown in FIG.
Similarly to 33a and 33b, it has an external connection terminal 41a bent in a direction perpendicular to the pressure contact surface, and this external connection terminal 41a is also led out upward from the lid 5.
他方のカソード電極４０ａは圧接面に対して直角方向に
折り曲げ形成した内部接続端子４２ｂを有している。ま
た、この内部接続端子４２ｂに対向して前記アノード電
極３３ｂは同形状の内部接続端子４２ａを有している。The other cathode electrode 40a has an internal connection terminal 42b bent in a direction perpendicular to the pressure contact surface. Moreover, the anode electrode 33b has an internal connection terminal 42a having the same shape as the internal connection terminal 42b.
これら内部接続端子４２ａ、４２ｂの各先端部には例え
ばＵ字状の溝４３が設けられ、この溝４３部においてポ
ルト４４及びナツト４５を締付は固定することにより、
アノード電極３３ｂ及びカソード電極４０ａが電気的に
接続され、２つの半導体素子３５ ａ 、 、？ ５
ｂ間の共通電極となるようになっている。カソード電極
４０ａ。For example, a U-shaped groove 43 is provided at the tip of each of these internal connection terminals 42a, 42b, and by tightening and fixing a port 44 and a nut 45 in this groove 43,
The anode electrode 33b and the cathode electrode 40a are electrically connected, and the two semiconductor elements 35a, ? 5
It is designed to serve as a common electrode between the two electrodes. Cathode electrode 40a.
４０ｂ上にはそれぞれ、ばね圧力に耐える絶縁体４６ａ
、４６ｂ、これら絶縁体４６ａ、４６ｂに組込まれた皿
ばね４７ａ、４７ｂ及び金属固定板４８ａ 、４８ｂか
らなるばね構体が股げられている。金属固定板４８ａ、
４８ｂはそれぞれポル）４９ａ 、４９ｂにより前記放
熱基板３１に固定されている。これにより、上記各電極
。40b are each provided with an insulator 46a that can withstand spring pressure.
, 46b, a spring structure consisting of disc springs 47a, 47b and metal fixing plates 48a, 48b incorporated in these insulators 46a, 46b is straddled. metal fixing plate 48a,
48b are fixed to the heat dissipation board 31 by pins 49a and 49b, respectively. This allows each of the above electrodes.
半導体素子３５．セラミック基板３２．及び放熱基板３
１間が皿ばね４７ａ、４７ｂの弾性力により加圧接触さ
れている。なお、５０＾、５０ｂはそれぞれダート端子
及びカソード端子に共通接続され、蓋体５１から導出さ
れた外部接続端子である。Semiconductor element 35. Ceramic substrate 32. and heat dissipation board 3
1 are pressed into contact by the elastic force of disc springs 47a and 47b. Note that 50^ and 50b are external connection terminals that are commonly connected to the dart terminal and the cathode terminal, respectively, and led out from the lid body 51.
このように回路が構成されたユニットは、各電極間を絶
縁被膜から防止するようにグル材で保護され、さらに放
熱基板３１には例えばエポキシ樹脂で形成された蓋体５
１が覆せられている。放熱基板３１と蓋体５１との間の
隙間は例えばエポキシ樹脂系の接着材５２ａで埋められ
ている。また、蓋体５ノとこの蓋体５１から導出された
外部接続端子３４ａ、３４ｂ、４１ａ及び外部接続端子
５０ａ、５０ｂとの間の隙間も同じくエポキシ樹脂系の
接着材５２ｂ、５２ｃで埋められている。上記一方の接
鴻材５２ａは放熱基板３１の形成材料であるアルミニウ
ムＡｔに近い熱膨張係数を有するもの、また他方の接着
材５２ｂ 、５２ｃは外部接続端子３４８〜５０ｂの形
成材料である銅Ｃｕに近い熱膨張係数を有するものを用
いることにより、これらの刺止効果は熱的に強くなる。The unit in which the circuit is configured in this manner is protected by a glue material to prevent an insulating film between each electrode, and the heat dissipation board 31 is further provided with a lid 5 made of, for example, epoxy resin.
1 is overturned. The gap between the heat dissipation board 31 and the lid 51 is filled with an epoxy resin adhesive 52a, for example. Furthermore, the gaps between the lid body 5 and the external connection terminals 34a, 34b, 41a and external connection terminals 50a, 50b led out from the lid body 51 are also filled with epoxy resin adhesives 52b, 52c. There is. One of the adhesive materials 52a has a thermal expansion coefficient close to that of aluminum At, which is the material for forming the heat dissipation board 31, and the other adhesive materials 52b and 52c are made of copper Cu, which is the material for forming the external connection terminals 348 to 50b. By using materials with similar coefficients of thermal expansion, these stab effects become thermally stronger.
また、蓋体５１には管５３が設げられており、この管５
３を通して蓋体５２内部のグル中には窒素が封入されて
空間層を形成し、これにより温度上昇に伴うグルの膨張
を緩和するようになっている。Further, the lid body 51 is provided with a tube 53.
Nitrogen is sealed in the glue inside the lid body 52 through 3 to form a space layer, thereby mitigating the expansion of the glue due to temperature rise.
上記圧接型のサイリスクモジュールにおいては、その組
立時、先ず、カソード電極４０ａ。In the press-contact type SIRISK module, when assembling it, first the cathode electrode 40a is assembled.
４０ｂ上に皿ばね４７ａ、４７ｂ等のばね構体を載置し
、？シト４９ａ、４９ｂをそれぞれ別個に締付は調整し
て、半導体素子３５ ａ 、 、？ ５ ｂを均等に圧
接するように加圧した状態にする。A spring structure such as disc springs 47a and 47b is placed on 40b. The tightening of the seats 49a and 49b is adjusted separately, and the semiconductor elements 35a, , ? 5) Apply pressure so that b is evenly pressed.
その後、その状態で、ポルト４４及びナツト４５を締付
けることにより、共通電極となるカソード電極４０ａの
内部接続端子４２ｂとアノード電極３３ｂの内部接続端
子４２ａとを電気的に接続し固定するものである。Thereafter, in this state, by tightening the port 44 and nut 45, the internal connection terminal 42b of the cathode electrode 40a serving as a common electrode and the internal connection terminal 42a of the anode electrode 33b are electrically connected and fixed.
２つ以上の半導体素子の電極面を１つの共通電極により
同時に加圧接触させたいとき、部品や半導体素子の寸法
精度から均等に加圧接触させることは極めて困難であり
、半導体素子や電極には圧力のアンバラスが生じる。こ
の場合、部分的に圧力が集中し、機械的歪が生じて半導
体素子が劣化したり、又は部分的に放熱されれば温度上
昇を招き、半導体素子が劣化したりする。When it is desired to bring the electrode surfaces of two or more semiconductor elements into pressure contact at the same time using one common electrode, it is extremely difficult to bring them into even pressure contact due to the dimensional accuracy of the components and semiconductor elements. Pressure imbalance occurs. In this case, pressure is concentrated locally, causing mechanical strain and deteriorating the semiconductor element, or if heat is dissipated locally, temperature rises and the semiconductor element is deteriorated.
上記サイリスタモジュールでは、共通電極を分割（アノ
ード電極３．？ｂ及びカソード電極４０ｂ）し、それぞ
れ内部接続端子４２ａ、４２ｂを対向して設けることに
より、両電極を圧接面に対して直角方向にスライド可能
とし、両電極を各々別個に加圧接触させた後、これら両
電極を接続固定して共通電極とするようにしているので
、２つの半導体素子３５ａ、３５ｂ間にわたって電極面
を均等に加圧できる。In the above thyristor module, the common electrode is divided (anode electrode 3.?b and cathode electrode 40b), and internal connection terminals 42a and 42b are provided facing each other, so that both electrodes slide in a direction perpendicular to the pressure contact surface. After the two electrodes are brought into pressure contact with each other separately, the two electrodes are connected and fixed to form a common electrode, so that the electrode surface can be evenly pressed between the two semiconductor elements 35a and 35b. can.
尚、上記実施例においては、一方の半導体素子３５ａ側
のカソード電極４０ａと他方の半導体素子、？ ５ ｂ
側のアノード電極３３ｂとを共通電極とし、回路構成を
直列としたが、回路構成が並列である場合にはカソード
電極４０ａ、４θｂを共通電極とし、それぞれに内部接
続端子を設ける構成とすればよい。また、上記実施例に
おいては、半導体素子３５ａ、３５ｂとしてサイリスタ
を用いた例について説明したが、これに限定するもので
はなく、他のトランジスタ、ダイオード等でもよいこと
は勿論である。In the above embodiment, the cathode electrode 40a on one semiconductor element 35a side and the other semiconductor element, ? 5 b
The side anode electrode 33b is used as a common electrode, and the circuit configuration is set in series. However, if the circuit configuration is in parallel, the cathode electrodes 40a and 4θb may be used as a common electrode, and an internal connection terminal may be provided for each. . Further, in the above embodiment, an example was explained in which thyristors were used as the semiconductor elements 35a and 35b, but the present invention is not limited to this, and it goes without saying that other transistors, diodes, etc. may be used.
以上のように本発明によれば、トランジスタ、サイリス
タ等の複数の半導体素子間の電気的接続続を共通電極に
よる加圧接続構造としたので、従来のボンディング及び
半田接続の場合のように大電流が局部的に集中するよう
７′フことがなく、破壊等の発生を防止することができ
る信頼性に優れた半導体装置を提供できる。As described above, according to the present invention, electrical connections between a plurality of semiconductor elements such as transistors and thyristors are made using a pressure connection structure using a common electrode. Therefore, it is possible to provide a highly reliable semiconductor device that is free from local concentration of 7' and is capable of preventing destruction and the like.
第１図は従来のトランジスタモジー−ルの構造を示す断
面図、第２図は本発明の一実施例に係るサイリスクモジ
ュールの構造を示す平面図、第３図は同断面図、第４図
は第２図のモジュールにおける電極の構造を示す斜視図
、第５図は同じくカソード盤の構造を示す断面図である
。
３ノ・・・放熱基板、３２・・・セラミック板、３３
＆ 、 ３３ ｂ ・・・アノード電極、３４ｈ、３４
ｂ・・・外部接続端子、３５ ａ 、 、？ ５ ｂ・
・・半導体素子、３６ ａ 、 ３６ ｂ−＝カソード
盤、４０ａ、４０ｂ・・・エミッタ電極、４１ａ・・・
外部接続端子、４ ；ｌ ａ 、 ４２ ｂ ・−・内
部接続端子、４６ａ、４６ｂ・・・絶縁体、４７ ａ
、 ４７ ｂ−皿ばね、４８ａ。
４１１ｂ・・・金属固定板、４９ｈ、４９ｂ・・・？ル
ト、５１ ・・・蓋体、５２ ａ 、 ５２ ｂ 、
５２ ｅ −＝接着材。
出願人代理人 弁理士 鈴 江 武 彦第１図
第２図FIG. 1 is a sectional view showing the structure of a conventional transistor module, FIG. 2 is a plan view showing the structure of a cyrisk module according to an embodiment of the present invention, FIG. This figure is a perspective view showing the structure of the electrode in the module of FIG. 2, and FIG. 5 is a sectional view showing the structure of the cathode board. 3. Heat dissipation board, 32... Ceramic plate, 33
& , 33 b...Anode electrode, 34h, 34
b...External connection terminal, 35 a, ? 5 b・
...Semiconductor element, 36a, 36b-=cathode board, 40a, 40b...emitter electrode, 41a...
External connection terminal, 4; la, 42 b --- Internal connection terminal, 46a, 46b... Insulator, 47 a
, 47b-disc spring, 48a. 411b...metal fixing plate, 49h, 49b...? Root, 51... Lid body, 52 a, 52 b,
52 e −=adhesive material. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (2)
される共通絶縁板と、この共通絶縁板上に載置される複
数の圧接型の半導体素子構体と、前記支持基体上に設け
られ前記半導体素子構体を覆う蓋体と、前記複数の半導
体素子構体にそれぞれ電気的に接続される複数の共通電
極と、前記蓋体内において、それぞれ対応する前記半導
体素子構体と前記共通電極とを加圧接続さぜる複数のば
ね構体と、前記共通電極にそれぞれ圧接面に対して直角
方向に折り曲げ形成して設けられ、隣り合う前記共通電
極間で相対向する複数の内部接続端子と、前記相対向す
る内部接続端子間を電気的に接続固定する手段とを具備
し、前記共通電極をそれぞれ前記半導体素子構体に加圧
接続した後、前記相対向する内部接続端子間を電気的に
接続し固定することを特徴とする半導体装置。(1) A support base that also serves as heat dissipation, a common insulating plate disposed on this support base, a plurality of press-contact type semiconductor element structures placed on this common insulating plate, and a plurality of press-contact semiconductor element structures disposed on the support base. a lid body that covers the semiconductor element structures; a plurality of common electrodes each electrically connected to the plurality of semiconductor element structures; a plurality of spring structures for pressure connection; a plurality of internal connection terminals provided on the common electrode by being bent in a direction perpendicular to the pressure contact surface; and a plurality of internal connection terminals facing each other between adjacent common electrodes; means for electrically connecting and fixing the opposing internal connection terminals, and after each of the common electrodes is connected to the semiconductor element structure under pressure, the opposing internal connection terminals are electrically connected and fixed. A semiconductor device characterized by:
子が導出されると共に、前記支持基体は金属、前記蓋体
は樹脂で形成され、同支持基体と同蓋体との間隙、同蓋
体と同外部接続端子との間隙がそれぞれ異なる熱膨張係
数を有する樹脂により封止された特許請求の付Σ囲第１
項記載の半導体装置。(2) An external connection terminal is led out from the common electrode through the lid, the support base is made of metal, the lid is made of resin, and the gap between the support base and the lid is the same. Σ Encircle 1 of the patent claim, in which the gap between the lid body and the external connection terminal is sealed with resin having different coefficients of thermal expansion.
1. Semiconductor device described in Section 1.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181284A JPS6074461A (en) | 1983-09-29 | 1983-09-29 | Semiconductor device |
| DE19843486256 DE3486256T2 (en) | 1983-09-29 | 1984-09-10 | Semiconductor device in a pressure pack. |
| EP19840110766 EP0138048B1 (en) | 1983-09-29 | 1984-09-10 | Press-packed semiconductor device |
| US06/650,107 US4694322A (en) | 1983-09-29 | 1984-09-13 | Press-packed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181284A JPS6074461A (en) | 1983-09-29 | 1983-09-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074461A true JPS6074461A (en) | 1985-04-26 |
Family
ID=16097997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58181284A Pending JPS6074461A (en) | 1983-09-29 | 1983-09-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074461A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017032356A1 (en) * | 2015-08-25 | 2017-03-02 | Infineon Technologies Bipolar Gmbh & Co Kg | Power semiconductor device module having a pressure plate that forms a basin |
| JP2020047658A (en) * | 2018-09-14 | 2020-03-26 | 富士電機株式会社 | Semiconductor module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129378A (en) * | 1976-04-21 | 1977-10-29 | Siemens Ag | Semiconductor device |
| JPS5410672A (en) * | 1977-06-23 | 1979-01-26 | Siemens Ag | Semiconductor |
| JPS5666049A (en) * | 1979-10-19 | 1981-06-04 | Siemens Ag | Semiconductor device |
| JPS56130958A (en) * | 1980-02-13 | 1981-10-14 | Semikron Gleichrichterbau | Semiconductor forming unit |
| JPS5724749B2 (en) * | 1977-04-20 | 1982-05-26 | ||
| JPS5884451A (en) * | 1981-10-27 | 1983-05-20 | シ−メンス・アクチエンゲゼルシヤフト | Semiconductor device |
-
1983
- 1983-09-29 JP JP58181284A patent/JPS6074461A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129378A (en) * | 1976-04-21 | 1977-10-29 | Siemens Ag | Semiconductor device |
| JPS5724749B2 (en) * | 1977-04-20 | 1982-05-26 | ||
| JPS5410672A (en) * | 1977-06-23 | 1979-01-26 | Siemens Ag | Semiconductor |
| JPS5666049A (en) * | 1979-10-19 | 1981-06-04 | Siemens Ag | Semiconductor device |
| JPS56130958A (en) * | 1980-02-13 | 1981-10-14 | Semikron Gleichrichterbau | Semiconductor forming unit |
| JPS5884451A (en) * | 1981-10-27 | 1983-05-20 | シ−メンス・アクチエンゲゼルシヤフト | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017032356A1 (en) * | 2015-08-25 | 2017-03-02 | Infineon Technologies Bipolar Gmbh & Co Kg | Power semiconductor device module having a pressure plate that forms a basin |
| JP2020047658A (en) * | 2018-09-14 | 2020-03-26 | 富士電機株式会社 | Semiconductor module |
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