WO2017014210A1 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- WO2017014210A1 WO2017014210A1 PCT/JP2016/071101 JP2016071101W WO2017014210A1 WO 2017014210 A1 WO2017014210 A1 WO 2017014210A1 JP 2016071101 W JP2016071101 W JP 2016071101W WO 2017014210 A1 WO2017014210 A1 WO 2017014210A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32275—Microwave reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32284—Means for controlling or selecting resonance mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32302—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
Definitions
- Various aspects and embodiments of the present invention relate to a plasma processing apparatus and a plasma processing method.
- a plasma processing apparatus that uses process gas excitation by microwaves.
- a microwave having a single frequency is generated by a microwave oscillator, the microwave is emitted into the processing container, and the process gas in the processing container is ionized to generate plasma.
- the reflected wave of the microwave is generated depending on the use condition, and the power absorbed from the microwave to the plasma is reduced due to the reflected wave.
- a tuner for impedance matching is provided between the microwave oscillator and the processing container, the power of the reflected wave of the microwave is detected, and the power of the reflected wave of the microwave is minimized.
- a technique for adjusting the position of a movable plate in a tuner is known.
- the disclosed plasma processing apparatus includes a processing container and a carrier group composed of a plurality of carriers each having a frequency belonging to a predetermined frequency band centered on a predetermined center frequency and having different frequencies.
- a carrier group generation unit to generate; a plasma generation unit that generates plasma in the processing container using the carrier group; a traveling wave spectrum that is a frequency spectrum of a traveling wave of the carrier group; and a reflection of the carrier group Using a spectrum detector that detects a reflected wave spectrum that is a frequency spectrum of the wave, and the traveling wave spectrum and the reflected wave spectrum, to calculate the absorption power that is the power of the carrier group absorbed in the plasma, Corresponding to the minimum value of the reflected wave spectrum and the minimum value so that the absorption power is equal to or greater than a threshold value And a control unit for adjusting the parameters for varying the frequency.
- the power of the carrier wave group can be absorbed into the plasma with high efficiency.
- FIG. 1 is a diagram schematically illustrating the plasma processing apparatus according to the first embodiment.
- FIG. 2 is a diagram for explaining an example of a method of generating a carrier wave group.
- FIG. 3A is a diagram illustrating an example of a waveform of a carrier wave group.
- FIG. 3B is a diagram illustrating an example of a waveform of a carrier wave group.
- FIG. 3C is a diagram illustrating an example of a waveform of a carrier wave group.
- FIG. 3D is a diagram illustrating an example of a waveform of a carrier wave group.
- FIG. 4 is a diagram for explaining an example of a traveling wave spectrum detection method.
- FIG. 5 is a diagram for explaining an example of a method of detecting a reflected wave spectrum.
- FIG. 5 is a diagram for explaining an example of a method of detecting a reflected wave spectrum.
- FIG. 6 is a flowchart illustrating an example of the flow of the plasma processing method according to the first embodiment.
- FIG. 7 is a diagram for explaining the change in absorption power in accordance with the change in the center frequency of the carrier wave group.
- FIG. 8 is a flowchart showing an example of the flow of the plasma processing method according to the second embodiment.
- FIG. 9 is a diagram for explaining the change in absorption power according to the protruding position of the movable plate of the tuner.
- FIG. 10 is a diagram for explaining an example of the operation of the control unit according to the third embodiment.
- FIG. 11 is a diagram for explaining an example of the operation of the control unit according to the fourth embodiment.
- FIG. 12A is a diagram for explaining the adjustment of the power of the traveling wave of the carrier wave group.
- FIG. 12A is a diagram for explaining the adjustment of the power of the traveling wave of the carrier wave group.
- FIG. 12B is a diagram for explaining the adjustment of the traveling wave power of the carrier wave group.
- FIG. 13A is a diagram for explaining the effect of adjusting the traveling wave power of the carrier wave group.
- FIG. 13B is a diagram for explaining the effect of adjusting the power of the traveling wave of the carrier wave group.
- FIG. 1 is a diagram schematically illustrating the plasma processing apparatus according to the first embodiment.
- the plasma processing apparatus 1 shown in FIG. 1 includes a processing container 12, a stage 14, a carrier wave group generation unit 16, an antenna 18, a dielectric window 20, and a control unit 100.
- the processing container 12 defines a processing space S for performing plasma processing.
- the processing container 12 has a side wall 12a and a bottom 12b.
- the side wall 12a is formed in a substantially cylindrical shape.
- the axial line X extending in the cylindrical shape at the cylindrical center of the side wall 12a is virtually set, and the extending direction of the axial line X is referred to as the axial X direction.
- the bottom 12b is provided on the lower end side of the side wall 12a and covers the bottom opening of the side wall 12a.
- the bottom 12b is provided with an exhaust hole 12h for exhaust.
- the upper end of the side wall 12a is open.
- the upper end opening of the side wall 12 a is closed by the dielectric window 20.
- An O-ring 19 is interposed between the dielectric window 20 and the upper end of the side wall 12a.
- the dielectric window 20 is provided at the upper end portion of the side wall 12 a via the O-ring 19.
- the O-ring 19 makes the sealing of the processing container 12 more reliable.
- the stage 14 is accommodated in the processing space S, and the workpiece W is placed thereon.
- the dielectric window 20 has a facing surface 20 a that faces the processing space S.
- the carrier wave group generation unit 16 generates a carrier wave group composed of a plurality of carrier waves that belong to a predetermined frequency band centered on a predetermined center frequency and have different frequencies.
- the carrier wave group generation unit 16 includes a PLL (Phase Locked Loop) oscillator capable of oscillating a microwave whose phase is synchronized with a reference frequency, and an IQ digital modulator connected to the PLL oscillator.
- the carrier wave group generation unit 16 sets the frequency of the microwave oscillated from the PLL oscillator as the center frequency.
- the carrier wave group generation unit 16 generates a plurality of carrier waves that belong to a predetermined frequency band centered on the frequency of the microwave, which is the center frequency, and have different frequencies from each other using the IQ digital modulator. By doing so, a carrier wave group is generated. For example, if N complex data symbols are subjected to inverse discrete Fourier transform to form a continuous signal, the carrier wave group of the present invention can be generated. This signal can be generated by a method similar to the OFDMA (Orthogonal Frequency-Division Multiple Access) modulation method used in digital television broadcasting or the like (see, for example, Japanese Patent No. 5320260). The center frequency and frequency band in the carrier wave group generated by the carrier wave group generating unit 16 are controlled by the control unit 100 described later.
- OFDMA Orthogonal Frequency-Division Multiple Access
- FIG. 2 is a diagram for explaining an example of a method for generating a carrier wave group.
- the waveform data is represented by a string of codes digitized in advance.
- the I data and the Q data are separated.
- each of the I data and Q data is D / A (Digital / Analog) converted and input to an LPF (low pass filter) that allows only low frequency components to pass.
- LPF low pass filter
- a carrier wave having a phase difference of 90 ° is generated from a carrier wave (for example, a microwave) having a center frequency (fo) oscillated from the PLL oscillator.
- a carrier wave group is generated by modulating the carrier waves whose phases are different from each other by 90 ° using the I data and Q data output from the LPF.
- the carrier wave group in this embodiment is obtained by multiplexing carrier waves in a 40 MHz bandwidth at a 10 kHz pitch using a microwave having a center frequency of 2450 MHz.
- FIG. 3A to 3D are diagrams illustrating an example of a waveform of a carrier wave group.
- FIG. 3A shows a waveform of a carrier wave group in a three-dimensional coordinate space constituted by a time axis, a frequency axis, and an amplitude axis.
- FIG. 3B shows a waveform of a carrier wave group in a two-dimensional coordinate space constituted by a frequency axis and an amplitude axis.
- FIG. 3C shows a waveform of a carrier wave group in a two-dimensional coordinate space constituted by a time axis and a frequency axis.
- FIG. 3D shows a waveform of a carrier wave group in a two-dimensional coordinate space constituted by a time axis and an amplitude axis.
- the carrier wave group is a frequency belonging to a predetermined frequency band (for example, 40 MHz) centered on a predetermined center frequency (for example, 2.45 GHz), and has different frequencies.
- a plurality of carrier waves (carrier waves f1 to f12).
- the frequency of each carrier wave is constant regardless of the passage of time.
- the amplitudes of the plurality of carrier waves are the same.
- the amplitude of each carrier wave is constant regardless of the passage of time.
- at least two carriers whose frequencies are adjacent in a predetermined frequency band are different in phase by 90 °.
- the carrier wave f1 and the carrier wave f2 whose frequencies are adjacent to each other are 90 ° out of phase.
- the frequencies of a plurality of carrier waves are arranged with a certain interval (for example, 10 kHz).
- the plasma processing apparatus 1 further includes an amplifier 21, a waveguide 22, a dummy load 23, a traveling wave spectrum detector 24, a reflected wave spectrum detector 25, a tuner 26, a mode converter 27, and a coaxial waveguide 28. Yes.
- the carrier group generator 16 is connected to the waveguide 22 via the amplifier 21.
- the amplifier 21 amplifies the carrier wave group generated by the carrier wave group generation unit 16 and outputs the amplified carrier wave group to the waveguide 22.
- the waveguide 22 is, for example, a rectangular waveguide.
- the waveguide 22 is connected to a mode converter 27, and the mode converter 27 is connected to the upper end of the coaxial waveguide 28.
- the dummy load 23 is connected to the waveguide 22 via the circulator 23a.
- the circulator 23 a extracts the reflected wave of the carrier wave group reflected from the processing container 12 side, and outputs the extracted reflected wave of the carrier wave group to the dummy load 23.
- the dummy load 23 converts the reflected wave of the carrier wave group input from the circulator 23a into heat by a load or the like.
- the traveling wave spectrum detector 24 is connected to the waveguide 22 via a directional coupler 24a.
- the directional coupler 24 a extracts the traveling wave of the carrier wave group toward the processing container 12, and outputs the extracted traveling wave of the carrier wave group to the traveling wave spectrum detector 24.
- the degree of coupling of the directional coupler 24a is, for example, 60 dBm, and the directionality of the directional coupler 24a is, for example, 35 dBm.
- the traveling wave spectrum detector 24 detects the frequency spectrum (hereinafter referred to as “traveling wave spectrum”) of the traveling wave of the carrier wave group input from the directional coupler 24 a and outputs the detected traveling wave spectrum to the control unit 100.
- the traveling wave spectrum is a distribution of the traveling wave power of the carrier wave group with respect to the traveling wave frequency of the carrier wave group, and is detected, for example, by performing Fourier transform on the traveling wave of the carrier wave group.
- FIG. 4 is a diagram for explaining an example of a traveling wave spectrum detection method.
- the center frequency of the carrier group generated by the carrier group generation unit 16 is fo, and the bandwidth of the carrier group is 40 MHz.
- the traveling wave of the carrier wave group (hereinafter referred to as “traveling wave” as appropriate) input from the directional coupler 24a to the traveling wave spectrum detector 24, and the center frequency fo oscillated from the PLL oscillator.
- the traveling wave is demodulated to obtain a demodulated signal.
- the bandwidth of the demodulated signal is 40 MHz.
- the obtained demodulated signal passes through an LPF having a transmission band of about 100 MHz and is A / D converted in an A / D (Analog / Digital) converter.
- the clock frequency of the A / D converter is, for example, twice or more the bandwidth of the carrier wave group.
- the clock frequency of the A / D converter is 80 MHz.
- the A / D converted demodulated signal is subjected to Fourier transform, and a plurality of frequency components included in the traveling wave are extracted. Using these plural frequency components, the distribution of the traveling wave power of the carrier group with respect to the traveling wave frequency of the carrier group, that is, the traveling wave spectrum is detected.
- the reflected wave spectrum detector 25 is connected to the waveguide 22 via a directional coupler 25a.
- the directional coupler 25 a extracts the reflected wave of the carrier wave group reflected from the processing container 12 side, and outputs the extracted reflected wave of the carrier wave group to the reflected wave spectrum detector 25.
- the degree of coupling of the directional coupler 25a is, for example, 60 dBm, and the directionality of the directional coupler 25a is, for example, 35 dBm.
- the reflected wave spectrum detector 25 detects the frequency spectrum of the reflected wave of the carrier wave group input from the directional coupler 25 a (hereinafter referred to as “reflected wave spectrum”), and outputs the detected reflected wave spectrum to the control unit 100. To do.
- the reflected wave spectrum is a distribution of power of the reflected wave of the carrier group with respect to the frequency of the reflected wave of the carrier group, and is detected, for example, by performing Fourier transform on the reflected wave of the carrier group.
- the traveling wave spectrum detector 24 and the reflected wave spectrum detector 25 are examples of a spectrum detector.
- FIG. 5 is a diagram for explaining an example of a method of detecting a reflected wave spectrum.
- the center frequency of the carrier group generated by the carrier group generation unit 16 is fo and the bandwidth of the carrier group is 40 MHz.
- the reflected wave of the carrier wave group (hereinafter referred to as “reflected wave” as appropriate) input to the reflected wave spectrum detector 25 from the directional coupler 25a and the center frequency fo oscillated from the PLL oscillator.
- the reflected wave is demodulated to obtain a demodulated signal.
- the bandwidth of the demodulated signal is 40 MHz.
- the obtained demodulated signal passes through an LPF having a transmission band of about 100 MHz and is A / D converted by an A / D converter.
- the clock frequency of the A / D converter is, for example, twice or more the bandwidth of the carrier wave group.
- the clock frequency of the A / D converter is 80 MHz.
- the A / D converted demodulated signal is subjected to Fourier transform, and a plurality of frequency components included in the reflected wave are extracted. Using these plurality of frequency components, the distribution of the reflected wave power of the carrier wave group with respect to the frequency of the reflected wave of the carrier wave group, that is, the reflected wave spectrum is detected.
- the tuner 26 is provided in the waveguide 22 and has a function of matching the impedance between the carrier wave group generation unit 16 and the processing container 12.
- the tuner 26 has movable plates 26 a and 26 b that are provided in the interior space of the waveguide 22 so as to protrude freely.
- the tuner 26 matches the impedance between the carrier wave group generation unit 16 and the processing container 12 according to the protruding position of the movable plates 26a and 26b with respect to the reference position.
- the movable plates 26a and 26b are examples of movable members.
- the coaxial waveguide 28 extends along the axis X.
- the coaxial waveguide 28 includes an outer conductor 28a and an inner conductor 28b.
- the outer conductor 28a has a substantially cylindrical shape extending in the axis X direction.
- the inner conductor 28b is provided inside the outer conductor 28a.
- the inner conductor 28b has a substantially cylindrical shape extending along the axis X.
- the carrier wave group generated by the carrier wave group generating unit 16 is guided to the mode converter 27 via the tuner 26 and the waveguide 22.
- the mode converter 27 converts the mode of the carrier wave group and supplies the carrier wave group after the mode conversion to the coaxial waveguide 28.
- a group of carriers from the coaxial waveguide 28 is supplied to the antenna 18.
- the antenna 18 radiates a carrier group for plasma excitation based on the carrier group generated by the carrier group generator 16.
- the antenna 18 includes a slot plate 30, a dielectric plate 32, and a cooling jacket 34.
- the antenna 18 is provided on a surface 20b opposite to the facing surface 20a of the dielectric window 20, and based on the carrier wave group generated by the carrier wave group generating unit 16, the carrier wave for plasma excitation is passed through the dielectric window 20. A group is emitted into the processing space S.
- the slot plate 30 is formed in a substantially disc shape whose plate surface is orthogonal to the axis X.
- the slot plate 30 is disposed on the surface 20b opposite to the opposing surface 20a of the dielectric window 20 so that the plate surfaces of the dielectric window 20 and the dielectric plate 20 are aligned with each other.
- a plurality of slots 30 a are arranged in the circumferential direction about the axis X.
- the slot plate 30 is a slot plate constituting a radial line slot antenna.
- the slot plate 30 is formed in a metal disk shape having conductivity.
- a plurality of slots 30 a are formed in the slot plate 30.
- a through hole 30 d through which a conduit 36 described later can pass is formed in the center portion of the slot plate 30.
- the dielectric plate 32 is formed in a substantially disc shape whose plate surface is orthogonal to the axis X.
- the dielectric plate 32 is provided between the slot plate 30 and the lower surface of the cooling jacket 34.
- the dielectric plate 32 is made of, for example, quartz and has a substantially disk shape.
- the surface of the cooling jacket 34 has conductivity.
- the cooling jacket 34 has a flow path 34a through which a refrigerant can flow, and cools the dielectric plate 32 and the slot plate 30 by the flow of the refrigerant.
- a lower end of the outer conductor 28 a is electrically connected to the upper surface of the cooling jacket 34.
- the lower end of the inner conductor 28 b is electrically connected to the slot plate 30 through a hole formed in the cooling jacket 34 and the central portion of the dielectric plate 32.
- the carrier wave group from the coaxial waveguide 28 is propagated to the dielectric plate 32 and introduced into the processing space S from the slot 30 a of the slot plate 30 through the dielectric window 20.
- a conduit 36 passes through the inner hole of the inner conductor 28 b of the coaxial waveguide 28.
- a through hole 30 d through which the conduit 36 can penetrate is formed at the center of the slot plate 30.
- the conduit 36 extends along the axis X and is connected to a gas supply system 38.
- the gas supply system 38 supplies a processing gas for processing the workpiece W to the conduit 36.
- the gas supply system 38 may include a gas source 38a, a valve 38b, and a flow controller 38c.
- the gas source 38a is a processing gas source.
- the valve 38b switches supply and stop of supply of the processing gas from the gas source 38a.
- the flow rate controller 38c is a mass flow controller, for example, and adjusts the flow rate of the processing gas from the gas source 38a.
- the plasma processing apparatus 1 may further include an injector 41.
- the injector 41 supplies the gas from the conduit 36 to the through hole 20 h formed in the dielectric window 20.
- the gas supplied to the through hole 20 h of the dielectric window 20 is supplied to the processing space S.
- the gas supply path constituted by the conduit 36, the injector 41, and the through hole 20h may be referred to as a “central gas introduction unit”.
- the stage 14 is provided so as to face the dielectric window 20 in the axis X direction.
- the stage 14 is provided so as to sandwich the processing space S between the dielectric window 20 and the stage 14.
- a workpiece W is placed on the stage 14.
- the stage 14 includes a table 14a, a focus ring 14b, and an electrostatic chuck 14c.
- the base 14 a is supported by a cylindrical support portion 48.
- the cylindrical support portion 48 is made of an insulating material and extends vertically upward from the bottom portion 12b.
- a conductive cylindrical support 50 is provided on the outer periphery of the cylindrical support 48.
- the cylindrical support portion 50 extends vertically upward from the bottom portion 12 b of the processing container 12 along the outer periphery of the cylindrical support portion 48.
- An annular exhaust passage 51 is formed between the cylindrical support portion 50 and the side wall 12a.
- An annular baffle plate 52 provided with a plurality of through holes is attached to the upper part of the exhaust passage 51.
- An exhaust device 56 is connected to the lower portion of the exhaust hole 12 h via an exhaust pipe 54.
- the exhaust device 56 includes an automatic pressure control valve (APC) and a vacuum pump such as a turbo molecular pump.
- APC automatic pressure control valve
- the exhaust device 56 can depressurize the processing space S in the processing container 12 to a desired degree of vacuum.
- the stand 14a also serves as a high-frequency electrode.
- a high frequency power source 58 for RF bias is electrically connected to the base 14 a via a power feed rod 62 and a matching unit 60.
- the high-frequency power source 58 outputs a certain frequency suitable for controlling the energy of ions drawn into the workpiece W, for example, 13.65 MHz high-frequency power (hereinafter referred to as “bias power” as appropriate) at a predetermined power.
- the matching unit 60 accommodates a matching unit for matching between the impedance on the high-frequency power source 58 side and the impedance on the load side such as electrodes, plasma, and the processing container 12.
- This matching unit includes a blocking capacitor for generating a self-bias.
- An electrostatic chuck 14c is provided on the upper surface of the table 14a.
- the electrostatic chuck 14c holds the workpiece W with an electrostatic attraction force.
- a focus ring 14b is provided outside the electrostatic chuck 14c in the radial direction so as to surround the workpiece W in an annular shape.
- the electrostatic chuck 14c includes an electrode 14d, an insulating film 14e, and an insulating film 14f.
- the electrode 14d is made of a conductive film, and is provided between the insulating film 14e and the insulating film 14f.
- a high-voltage DC power supply 64 is electrically connected to the electrode 14 d via a switch 66 and a covered wire 68.
- the electrostatic chuck 14c can attract and hold the workpiece W by the Coulomb force generated by the DC voltage applied from the DC power source 64.
- An annular refrigerant chamber 14g extending in the circumferential direction is provided inside the table 14a.
- a refrigerant having a predetermined temperature for example, cooling water, is circulated and supplied to the refrigerant chamber 14g from a chiller unit (not shown) via pipes 70 and 72.
- the upper surface temperature of the electrostatic chuck 14c is controlled by the temperature of the refrigerant.
- a heat transfer gas, for example, He gas is supplied between the upper surface of the electrostatic chuck 14c and the back surface of the workpiece W via the gas supply pipe 74, and the workpiece is processed by the upper surface temperature of the electrostatic chuck 14c.
- the temperature of W is controlled.
- gas is supplied along the axis X into the processing space S from the through hole 20h of the dielectric window 20 through the conduit 36 and the injector 41.
- a carrier wave group is introduced from the antenna 18 through the dielectric window 20 into the processing space S and / or the through hole 20h.
- plasma is generated in the processing space S and / or the through hole 20h.
- the antenna 18 and the dielectric window 20 are an example of a plasma generation unit that generates plasma in the processing container 12 using a carrier wave group.
- the control part 100 is connected to each part which comprises the plasma processing apparatus 1, and controls each part collectively.
- the control unit 100 includes a controller 101 including a CPU (Central Processing Unit), a user interface 102, and a storage unit 103.
- CPU Central Processing Unit
- the controller 101 performs overall control of each part such as the carrier wave group generation unit 16, the stage 14, the gas supply system 38, and the exhaust device 56 by executing the program and processing recipe stored in the storage unit 103.
- the user interface 102 includes a keyboard and a touch panel on which a process manager manages command input to manage the plasma processing apparatus 1, a display for visualizing and displaying the operating status of the plasma processing apparatus 1, and the like. .
- the storage unit 103 stores a control program (software) for realizing various processes executed by the plasma processing apparatus 1 under the control of the controller 101, process condition data, and the like. Recipes are stored.
- the controller 101 calls various control programs, such as instructions from the user interface 102, from the storage unit 103 as necessary, and causes the controller 101 to execute the desired program in the plasma processing apparatus 1 under the control of the controller 101. Is performed.
- recipes such as control programs and processing condition data may be stored in computer-readable computer recording media (for example, hard disks, CDs, flexible disks, semiconductor memories, etc.), or It is also possible to transmit the data from other devices as needed via a dedicated line and use it online.
- control unit 100 can control each unit of the plasma processing apparatus 1 so as to perform a plasma processing method described later.
- the control unit 100 uses the traveling wave spectrum and the reflected wave spectrum received from the traveling wave spectrum detector 24 and the reflected wave spectrum detector 25 to indicate the power of the carrier wave group absorbed by the plasma. Calculate the absorbed power.
- the control part 100 fluctuates the frequency (henceforth "minimum reflection frequency") corresponding to the minimum value of a reflected wave spectrum and the minimum value of a reflected wave spectrum so that the calculated absorption power may become more than a threshold value. Adjust “Parameter”.
- the control unit 100 controls the carrier group generation unit 16 to sweep the center frequency of the carrier group as the “parameter” described above, thereby determining the center frequency of the carrier group at which the absorption power is equal to or greater than the threshold value. Explore.
- FIG. 6 is a flowchart illustrating an example of the flow of the plasma processing method according to the first embodiment.
- the carrier wave group generation unit 16 of the plasma processing apparatus 1 is a carrier wave composed of a plurality of carrier waves that belong to a predetermined frequency band centered on a predetermined center frequency and have different frequencies.
- a group is generated (step S101).
- the initial value of the center frequency and frequency band in the carrier wave group generated by the carrier wave group generating unit 16 is controlled by the control unit 100.
- the antenna 18 and the dielectric window 20 generate plasma in the processing container 12 using a carrier wave group (step S102).
- the control unit 100 controls the carrier group generation unit 16 to set the center frequency of the carrier group to a lower limit value of a predetermined frequency range (step S103).
- the control unit 100 receives the traveling wave spectrum and the reflected wave spectrum from the traveling wave spectrum detector 24 and the reflected wave spectrum detector 25, respectively (step S104).
- the control unit 100 calculates the absorption power using the traveling wave spectrum and the reflected wave spectrum (step S105). More specifically, the control unit 100 calculates the absorption power by integrating the difference between the traveling wave spectrum and the reflected wave spectrum with the frequency.
- the control unit 100 records the absorption power in the storage unit 103 in association with the current center frequency of the carrier wave group (step S106). Thereby, the storage unit 103 sequentially records the absorption power for each center frequency with respect to a plurality of different center frequencies.
- the control unit 100 controls the carrier group generation unit 16 to shift the center frequency of the carrier group by a predetermined width toward the upper limit value of the predetermined frequency range (step S107). That is, the control unit 100 controls the carrier group generation unit 16 to sweep (change) the center frequency of the carrier group as the “parameter” in a predetermined frequency range. As a result, the minimum value and the minimum reflection frequency of the reflected wave spectrum change, and as a result, the absorption power changes.
- FIG. 7 is a diagram for explaining the change in the absorption power in accordance with the change in the center frequency of the carrier wave group.
- the horizontal axis represents frequency [GHz]
- the vertical axis represents power [dBm]. Since the directional coupler in this measurement has a coupling degree of 60 dBm, the actual power is a numerical value obtained by adding 60 dBm to the numerical value on the vertical axis.
- a graph 501 shows a traveling wave spectrum when the center frequency of the carrier group is 2.450 GHz
- a graph 502 shows a reflected wave when the center frequency of the carrier group is 2.450 GHz. The spectrum is shown.
- FIG. 7 shows a traveling wave spectrum when the center frequency of the carrier group is 2.450 GHz
- a graph 502 shows a reflected wave when the center frequency of the carrier group is 2.450 GHz. The spectrum is shown.
- a graph 503 shows a traveling wave spectrum when the center frequency of the carrier group is 2.464 GHz
- a graph 504 shows a reflected wave when the center frequency of the carrier group is 2.464 GHz.
- the spectrum is shown.
- the absorption power when the center frequency of the carrier wave group is 2.450 GHz corresponds to the area A1 of the region sandwiched between the graph 501 and the graph 502.
- the absorption power when the center frequency of the carrier wave group is 2.464 GHz corresponds to the area A2 of the region sandwiched between the graph 503 and the graph 504.
- FIG. 7 it is assumed that the size relationship between the area A1 and the area A2 is indicated by the size relationship of arrows.
- control unit 100 determines whether or not the center frequency of the carrier wave group has exceeded an upper limit value of a predetermined frequency range (step S108). When the center frequency of the carrier group does not exceed the upper limit value of the predetermined frequency range (No at Step S108), the control unit 100 returns the process to Step S104.
- the control unit 100 refers to the storage unit 103 to determine the carrier wave group whose absorption power is equal to or greater than the threshold value.
- a center frequency is specified (step S109). The center frequency of the specified carrier group is set in the carrier group generation unit 16 by the control unit 100.
- the plasma processing apparatus 1 calculates the absorption power using the traveling wave spectrum and the reflected wave spectrum when the plasma is generated in the processing container 12 using the carrier wave group.
- the center frequency of the carrier wave group is adjusted so that the absorption power is equal to or higher than the threshold value. Accordingly, the minimum value and the minimum reflection frequency of the reflected wave spectrum can be freely changed following the adjustment of the center frequency of the carrier wave group, so that the absorption power can be increased as much as possible. As a result, the power of the carrier wave group can be absorbed into the plasma with high efficiency.
- the second embodiment is different from the first embodiment in that, as the “parameter” described above, the protruding position of the movable plate of the tuner is adjusted instead of the center frequency of the carrier wave group.
- the basic configuration of the plasma processing apparatus of the second embodiment is the same as that of the plasma processing apparatus 1 of the first embodiment, and will be described with reference to FIG.
- the control unit 100 adjusts the protruding positions of the movable plates 26a and 26b of the tuner 26 as the “parameter” so that the absorbed power is equal to or greater than the threshold value. Specifically, the control unit 100 controls the tuner 26 and sweeps the protruding positions of the movable plates 26a and 26b as the “parameter” described above, so that the absorption power of the movable plates 26a and 26b whose absorption power is equal to or greater than the threshold value. Search for the protruding position.
- FIG. 8 is a flowchart showing an example of the flow of the plasma processing method according to the second embodiment.
- the carrier wave group generation unit 16 of the plasma processing apparatus 1 is a carrier wave composed of a plurality of carrier waves that belong to a predetermined frequency band centered on a predetermined center frequency and have different frequencies.
- a group is generated (step S201). The initial value of the center frequency and frequency band in the carrier wave group generated by the carrier wave group generating unit 16 is controlled by the control unit 100.
- the antenna 18 and the dielectric window 20 generate plasma in the processing container 12 using a carrier wave group (step S202).
- the control unit 100 controls the tuner 26 to set the protruding positions of the movable plates 26a and 26b to a predetermined lower limit value of the movable range (step S203).
- the control unit 100 receives the traveling wave spectrum and the reflected wave spectrum from the traveling wave spectrum detector 24 and the reflected wave spectrum detector 25, respectively (step S204).
- the control unit 100 calculates the absorption power using the traveling wave spectrum and the reflected wave spectrum (step S205). More specifically, the control unit 100 calculates the absorption power by integrating the difference between the traveling wave spectrum and the reflected wave spectrum with the frequency.
- the control unit 100 records the absorption power in the storage unit 103 in association with the current protruding position of the movable plates 26a and 26b (step S206). As a result, the storage unit 103 sequentially records the absorbed power for each protruding position of the movable plates 26a and 26b with respect to the protruding positions of the plurality of different movable plates 26a and 26b.
- the control unit 100 controls the tuner 26 to shift the protruding positions of the movable plates 26a and 26b by a predetermined width toward the predetermined upper limit value of the movable range (step S207). That is, the control unit 100 controls the tuner 26 to sweep the protruding positions of the movable plates 26a and 26b as the above “parameter” within a predetermined movable range. As a result, the minimum value and the minimum reflection frequency of the reflected wave spectrum change, and as a result, the absorption power changes.
- FIG. 9 is a diagram for explaining the change in the absorption power according to the protruding position of the movable plate of the tuner.
- the horizontal axis represents frequency [GHz]
- the vertical axis represents power [dBm].
- a graph 601 indicates a traveling wave spectrum when the protruding positions of the movable plates 26a and 26b are swept (changed)
- a graph group 602 indicates that the protruding positions of the movable plates 26a and 26b are swept.
- the reflected wave spectrum when changed is shown.
- (X, Y) is a combination of protruding positions of the movable plates 26a, 26b, X indicates a protruding position (mm) of the movable plate 26a, and Y is a protruding position of the movable plate 26b. (Mm) is shown.
- the absorbed power corresponds to the area of a region sandwiched between the graph 601 and each graph of the graph group 602.
- the minimum value and the minimum reflection frequency of the reflected wave spectrum change.
- the protruding position of the movable plate 26a is 3 mm and the protruding position of the movable plate 26b is ⁇ 12 mm
- the minimum value of the reflected wave spectrum is minimized, and as a result, the absorption power is maximized. It turns out that it becomes.
- control unit 100 determines whether or not the protruding positions of the movable plates 26a and 26b exceed an upper limit value of a predetermined movable range (step S208). When the protruding positions of the movable plates 26a and 26b do not exceed the predetermined upper limit value of the movable range (No at Step S208), the control unit 100 returns the process to Step S204.
- the control unit 100 refers to the storage unit 103 and the absorbed power becomes equal to or greater than the threshold value.
- the protruding positions of the movable plates 26a and 26b are specified (step S209).
- the specified protruding positions of the movable plates 26 a and 26 b are set in the tuner 26 by the control unit 100.
- the plasma processing apparatus 1 of the second embodiment calculates the absorption power using the traveling wave spectrum and the reflected wave spectrum when generating plasma in the processing container 12 using the carrier wave group.
- the protruding positions of the movable plates 26a and 26b of the tuner 26 are adjusted so that the absorbed power is equal to or greater than the threshold value. Accordingly, the minimum value and the minimum reflection frequency of the reflected wave spectrum can be freely changed following the adjustment of the protruding positions of the movable plates 26a and 26b of the tuner 26, so that the absorption power can be increased as much as possible. it can.
- the power of the carrier wave group can be absorbed into the plasma with high efficiency.
- the third embodiment relates to variations of the “parameter” adjustment method described above.
- the basic configuration of the plasma processing apparatus of the third embodiment is the same as that of the first embodiment.
- control unit 100 is configured so that the absorption power is equal to or higher than the threshold value, and the minimum reflection frequency belongs to a frequency range that does not cause abnormal discharge in the processing container 12. Adjust the “parameters”.
- FIG. 10 is a diagram for explaining an example of the operation of the control unit according to the third embodiment.
- the horizontal axis represents the minimum reflection frequency
- the vertical axis represents the difference between the traveling wave spectrum and the reflected wave spectrum.
- the normal discharge range A indicates a frequency range in which abnormal discharge is not generated in the processing container 12
- the abnormal discharge range B indicates a frequency range in which abnormal discharge is generated in the processing container 12. Yes.
- the abnormal discharge refers to a discharge that occurs at a position other than the position allowed in advance in the processing container 12.
- the normal discharge range A and the abnormal discharge range B are selected in advance using experiments or the like.
- the control unit 100 controls the carrier group generation unit 16 to sweep the center frequency of the carrier group as the above “parameter”. Then, the control unit 100 absorbs by selecting only the center frequency of the carrier wave group when the minimum reflection frequency belongs to the normal discharge range A shown in FIG. 10 among the center frequencies of the plurality of carrier wave groups obtained by sweeping. A center frequency of a carrier wave group whose power is equal to or greater than a threshold is searched.
- the absorption power is equal to or higher than the threshold value, and the minimum reflection frequency belongs to the frequency range that does not cause abnormal discharge in the processing container 12.
- the center frequency of the carrier wave group is adjusted as a “parameter”. As a result, the power of the carrier wave group can be absorbed into the plasma with high efficiency while suppressing the occurrence of abnormal discharge.
- the fourth embodiment is different from the third embodiment in that a warning is issued when the minimum reflection frequency deviates from a frequency range that does not cause abnormal discharge in the processing container 12.
- the basic configuration of the plasma processing apparatus of the fourth embodiment is the same as that of the third embodiment.
- the minimum reflection frequency changes with time as the processing container 12 is consumed or the members in the processing container 12 are consumed. Therefore, in the fourth embodiment, a warning for notifying the maintenance time of the processing container 12 or a member in the processing container 12 is issued using the minimum reflection frequency.
- the control unit 100 issues a warning when the minimal reflection frequency deviates from a frequency range that does not cause abnormal discharge in the processing container 12. For example, when the minimum reflection frequency deviates from a frequency range that does not cause abnormal discharge in the processing container 12, the control unit 100 displays a message prompting maintenance of the processing container 12 or a member in the processing container 12 on a display (not shown). A warning is issued by displaying.
- FIG. 11 is a diagram for explaining an example of the operation of the control unit according to the fourth embodiment.
- the horizontal axis indicates time, and the vertical axis indicates the minimum reflection frequency.
- “lower limit value” indicates a lower limit value of a frequency range in which abnormal discharge does not occur in the processing container 12.
- the minimum reflection frequency changes with time as the processing container 12 is consumed or the members in the processing container 12 are consumed. Due to this change over time, the minimum reflection frequency is assumed to be lower than the lower limit value of the frequency range in which abnormal discharge does not occur in the processing container 12 at time t1.
- the control unit 100 issues a warning by displaying a message prompting maintenance of the processing container 12 or a member in the processing container 12 on a display (not shown). Accordingly, the user of the plasma processing apparatus 1 that has received the warning performs the maintenance of the processing container 12 or a member in the processing container 12. Then, the minimum reflection frequency falls within the frequency range that does not cause abnormal discharge in the processing container 12.
- the minimum reflection frequency again changes over time as the processing container 12 is consumed or the members in the processing container 12 are consumed. Due to this change over time, the minimum reflection frequency is assumed to be lower than the lower limit value of the frequency range in which abnormal discharge does not occur in the processing container 12 at time t2. In this case, at time t2, the control unit 100 issues a warning by displaying a message prompting maintenance of the processing container 12 or a member in the processing container 12 on a display (not shown). Thereafter, such processing is repeated.
- the plasma processing apparatus 1 issues a warning when the minimum reflection frequency deviates from a frequency range that does not cause abnormal discharge in the processing container 12. As a result, the maintenance time of the processing container 12 or a member in the processing container 12 can be notified using the minimum reflection frequency.
- control unit 100 adjusts the “parameter” so that the absorbed power is equal to or greater than the threshold value, but the disclosed technique is not limited thereto.
- control unit 100 may adjust the “parameter” so that the absorbed power becomes the maximum value. Thereby, the power of the carrier wave group can be more efficiently absorbed into the plasma.
- control unit 100 adjusts the “parameter” and then controls the carrier group generation unit 16 so that the absorption power becomes a constant value equal to or greater than the threshold value.
- the traveling wave power may be adjusted.
- 12A and 12B are diagrams for explaining the adjustment of the power of the traveling wave of the carrier wave group.
- the horizontal axis indicates the center frequency of the carrier wave group
- the vertical axis indicates the traveling wave power [W] of the carrier wave group.
- the traveling wave power of the carrier wave group corresponds to the sum of the absorption power and the reflected wave power of the carrier wave group.
- the control unit 100 controls the carrier group generation unit 16 to adjust the center frequency of the carrier group to 2438 MHz or 2462 MHz as the above “parameter” so that the absorption power is 2550 W or more which is a threshold value. Shows the state.
- FIG. 12A the control unit 100 controls the carrier group generation unit 16 to adjust the center frequency of the carrier group to 2438 MHz or 2462 MHz as the above “parameter” so that the absorption power is 2550 W or more which is a threshold value. Shows the state.
- the carrier wave group generation unit 16 is controlled to advance the carrier wave group so that the absorption power becomes 2750 W which is a constant value equal to or higher than the threshold value. The wave power is adjusted.
- FIGS. 13A and 13B are diagrams for explaining the effect of adjusting the power of the traveling wave of the carrier wave group.
- the horizontal axis indicates the center frequency of the carrier wave group, and the vertical axis indicates the light emission intensity [a. u. ] Is shown.
- FIG. 13A shows the plasma emission intensity when the center frequency of the carrier group is adjusted to 2438 MHz, and the plasma emission intensity when the center frequency of the carrier group is adjusted to 2462 MHz.
- FIG. 13B shows plasma emission when the power of the traveling wave of the carrier group is adjusted so that the absorption power becomes 2750 W, which is a constant value equal to or higher than the threshold, after the center frequency of the carrier group is adjusted to 2438 MHz.
- the traveling wave power of the carrier wave group when the traveling wave power of the carrier wave group is not adjusted, the plasma emission intensity corresponding to the carrier wave group whose center frequency is adjusted to 2438 MHz and the carrier wave group whose center frequency is adjusted to 2462 MHz.
- the difference from the emission intensity of the plasma according to the is relatively large.
- the traveling wave power of the carrier wave group when the traveling wave power of the carrier wave group is adjusted, the plasma emission intensity corresponding to the carrier wave group whose center frequency is adjusted to 2438 MHz and the center frequency is adjusted to 2462 MHz.
- the difference from the emission intensity of the plasma corresponding to the set of carrier waves is reduced.
- the power of the traveling wave of the carrier wave group so that the absorption power is 2750 W, which is a constant value equal to or higher than the threshold, fluctuations in plasma emission intensity, in other words, fluctuations in plasma density, are suppressed.
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Abstract
Description
図1は、第1の実施形態に係るプラズマ処理装置の概略を示す図である。図1に示すプラズマ処理装置1は、処理容器12、ステージ14、搬送波群生成部16、アンテナ18、誘電体窓20及び制御部100を備えている。
第2の実施形態は、上記の「パラメータ」として、搬送波群の中心周波数に代えて、チューナの可動板の突出位置を調整する点が第1の実施形態と異なる。なお、第2の実施形態のプラズマ処理装置の基本構成は、第1の実施形態のプラズマ処理装置1と同様であるので、図1を参照して説明する。
第3の実施形態は、上記の「パラメータ」の調整手法のバリエーションに関する。なお、第3の実施形態のプラズマ処理装置の基本構成は、第1の実施形態と同様である。
第4の実施形態では、極小反射周波数が処理容器12内に異常放電を発生させない周波数の範囲を逸脱する場合に、警告を発する点が、第3の実施形態と異なる。なお、第4の実施形態のプラズマ処理装置の基本構成は、第3の実施形態と同様である。
12 処理容器
14 ステージ
16 搬送波群生成部
18 アンテナ
20 誘電体窓
30 スロット板
38 ガス供給系
100 制御部
101 コントローラ
102 ユーザインタフェース
103 記憶部
Claims (8)
- 処理容器と、
所定の中心周波数を中心とする所定の周波数帯域に属する周波数であって、互いに異なる周波数をそれぞれ有する複数の搬送波から成る搬送波群を生成する搬送波群生成部と、
前記搬送波群を用いて、前記処理容器内にプラズマを生成するプラズマ生成部と、
前記搬送波群の進行波の周波数スペクトルである進行波スペクトルと、前記搬送波群の反射波の周波数スペクトルである反射波スペクトルとを検出するスペクトル検出部と、
前記進行波スペクトル及び前記反射波スペクトルを用いて、前記プラズマに吸収される前記搬送波群のパワーである吸収パワーを算出し、前記吸収パワーが閾値以上となるように、前記反射波スペクトルの極小値及び当該極小値に対応する周波数を変動させるパラメータを調整する制御部と
を有することを特徴とするプラズマ処理装置。 - 前記制御部は、前記搬送波群生成部を制御して、前記パラメータとして前記搬送波群の前記中心周波数を掃引することによって、前記吸収パワーが前記閾値以上となる搬送波群の前記中心周波数を探索することを特徴とする請求項1に記載のプラズマ処理装置。
- 可動自在な可動部材を含み、基準位置に対する前記可動部材の位置に応じて、前記搬送波群生成部と前記処理容器との間のインピーダンスを整合するチューナをさらに有し、
前記制御部は、前記チューナを制御して、前記パラメータとして前記可動部材の位置を掃引することによって、前記吸収パワーが前記閾値以上となる前記可動部材の位置を探索することを特徴とする請求項1又は2に記載のプラズマ処理装置。 - 前記制御部は、前記吸収パワーが閾値以上となり、かつ、前記反射波スペクトルの極小値に対応する周波数が前記処理容器内に異常放電を発生させない周波数の範囲に属するように、前記パラメータを調整することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記反射波スペクトルの極小値に対応する周波数は、前記処理容器の消耗又は前記処理容器内の部材の消耗に伴って、経時的に変化し、
前記制御部は、前記反射波スペクトルの極小値に対応する周波数が前記処理容器内に異常放電を発生させない周波数の範囲を逸脱する場合に、警告を発することを特徴とする請求項4に記載のプラズマ処理装置。 - 前記制御部は、前記吸収パワーが最大値となるように、前記パラメータを調整することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記制御部は、前記パラメータを調整した後、前記搬送波群生成部を制御して、前記吸収パワーが前記閾値以上の一定値となるように、前記搬送波群の進行波のパワーを調整することを特徴とする請求項1に記載のプラズマ処理装置。
- 処理容器と、
所定の中心周波数を中心とする所定の周波数帯域に属する周波数であって、互いに異なる周波数をそれぞれ有する複数の搬送波から成る搬送波群を生成する搬送波群生成部と、
前記搬送波群を用いて、前記処理容器内にプラズマを生成するプラズマ生成部と、
前記搬送波群の進行波の周波数スペクトルである進行波スペクトルと、前記搬送波群の反射波の周波数スペクトルである反射波スペクトルとを検出するスペクトル検出部と
を有するプラズマ処理装置におけるプラズマ処理方法であって、
前記進行波スペクトルと前記反射波スペクトルとを用いて、前記プラズマに吸収される前記搬送波群のパワーである吸収パワーを算出し、
前記吸収パワーが閾値以上となるように、前記反射波スペクトルの極小値及び当該極小値に対応する周波数を変動させるパラメータを調整する
ことを特徴とするプラズマ処理方法。
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JPWO2017014210A1 (ja) | 2018-05-10 |
US20180211818A1 (en) | 2018-07-26 |
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KR102553462B1 (ko) | 2023-07-10 |
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