WO2017000332A1 - 一种掩膜板及其制造方法、oled器件封装方法 - Google Patents
一种掩膜板及其制造方法、oled器件封装方法 Download PDFInfo
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- WO2017000332A1 WO2017000332A1 PCT/CN2015/084869 CN2015084869W WO2017000332A1 WO 2017000332 A1 WO2017000332 A1 WO 2017000332A1 CN 2015084869 W CN2015084869 W CN 2015084869W WO 2017000332 A1 WO2017000332 A1 WO 2017000332A1
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- Prior art keywords
- hollowed
- region
- semi
- mask
- area
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 9
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- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 238000003698 laser cutting Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 2
- 238000005452 bending Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 229910052976 metal sulfide Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- 229940007424 antimony trisulfide Drugs 0.000 description 2
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
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- 229920002492 poly(sulfone) Polymers 0.000 description 2
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- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
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- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- VAVFJHFIZXVICW-UHFFFAOYSA-N S=[Co](=S)=S Chemical compound S=[Co](=S)=S VAVFJHFIZXVICW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PICQSJQNJSMSNL-UHFFFAOYSA-N [S--].[S--].[Cr+4] Chemical compound [S--].[S--].[Cr+4] PICQSJQNJSMSNL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ALRFTTOJSPMYSY-UHFFFAOYSA-N tin disulfide Chemical compound S=[Sn]=S ALRFTTOJSPMYSY-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- XWPGCGMKBKONAU-UHFFFAOYSA-N zirconium(4+);disulfide Chemical compound [S-2].[S-2].[Zr+4] XWPGCGMKBKONAU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Definitions
- the present invention relates to the field of organic electroluminescence display, and in particular to a mask, a method for fabricating the same, and a method for packaging an OLED device.
- Organic Light Emitting Diode also known as Organic Light-Emitting Diode, OLED
- OLED Organic Light-Emitting Diode
- OLED displays have many advantages, including the ability to achieve flexible displays.
- the flexible OLED panel can be realized by using a flexible plastic substrate as a carrier and a film packaging process.
- the OLED film package mainly adopts a structure of a passivation layer and a buffer layer, and the passivation layer is generally made of an inorganic material such as SiNx; the buffer layer is usually made of an organic or organic material.
- the thickness of the whole film package is micron-scale, and the stress is large when the inorganic film is thick, it is easy to break during bending, and water oxygen will age the OLED device through the fracture, so that the bending resistance of the package part of the flexible OLED device becomes difference.
- the technical problem to be solved by the present invention is to provide a mask and a manufacturing method thereof, and an OLED device packaging method capable of enhancing the bending performance of a package portion of a flexible OLED device.
- a technical solution adopted by the present invention is to provide a mask plate including a hollowed out area and a non-hollowed area disposed around the hollowed out area; and further comprising at least one strip-shaped half-empty area, semi-hollowed The area is set in the cutout area, and the first and last ends are respectively connected to the non-empty area.
- the mask comprises a plurality of strip-shaped semi-hollowed regions, and the crisscross regions are arranged in a crisscrossing manner, and the first and the last ends of each of the semi-hollowed regions are respectively connected to the non-hollowed regions.
- the semi-hollowed area includes a plurality of uniformly arranged through holes.
- the through hole is formed by laser cutting, photolithography or etching process.
- the mask is made of a metal material or a metal oxide material.
- another technical solution adopted by the present invention is to provide a method for manufacturing a mask, wherein the method comprises: providing a plate; forming at least one hollow region on the plate; and between the hollow regions A semi-hollow area is formed on the skeleton.
- the step of forming at least one hollow region on the plate material is specifically: defining a plurality of rectangular hollow regions distributed in the array on the plate; and performing hollowing treatment in the hollow region by etching or laser cutting.
- the step of forming a semi-hollow region on the skeleton between the hollow regions is specifically: forming a plurality of uniformly distributed through holes on the skeleton between the hollow regions.
- the method further comprises: removing burrs on the sheet material to make the edge of the sheet cut or etched smooth; providing a frame to install the processed sheet to On the frame, a mask is produced.
- an OLED device packaging method including: providing a substrate; fabricating an OLED device on the substrate; and using the first mask Forming a first passivation layer on the OLED device; wherein the first mask plate includes a hollow region and a non-hollow region disposed around the hollow region; and further includes at least one strip-shaped half hollow region, the semi-hollow region is disposed In the hollowed out region, the first and second ends are respectively connected to the non-hollowed region; wherein, the region of the first passivation layer corresponding to the semi-hollow region forms a thinned region, and the thickness of the thinned region is smaller than The thickness of the first passivation layer.
- the method further includes: forming a buffer layer on the first passivation layer; forming a second on the buffer layer by using the second mask a passivation layer; wherein the second mask comprises a hollowed out region and a non-hollowed region disposed around the hollowed out region; and further comprising at least one strip-shaped hollowed out region, wherein the semi-hollowed region is disposed in the hollowed out region, and The non-hollowed regions are respectively connected to the first and second tails; wherein a region of the first passivation layer corresponding to the semi-hollowed regions forms a thinned region, and the thickness of the thinned region is smaller than the thickness of the first passivation layer.
- the semi-hollowed region of the first mask is spaced apart from the semi-hollowed region of the second mask.
- the mask comprises a plurality of the strip-shaped semi-hollowed regions, and are arranged criss-crossing in the hollowed out region, and the first and last ends of each of the semi-hollowed regions are respectively connected to the non-hollowed regions.
- the semi-hollowed region includes a plurality of uniformly arranged through holes.
- the OLED device is a flexible OLED device.
- the mask disclosed in the present invention comprises a hollowed out area and a non-hollowed area disposed around the hollowed out area; and further comprises at least one strip-shaped semi-hollowed area, the semi-hollowed area is disposed at In the hollowed out area, and the first and last ends are respectively connected to the non-hollowed area.
- the film layer formed by the mask has a thinned region, so that the first passivation layer of the entire OLED package structure does not break due to a large stress during bending, thereby ensuring bending resistance of the flexible OLED. Sex.
- FIG. 1 is a schematic structural view of a first embodiment of a mask according to the present invention.
- FIG. 2 is a schematic structural view of a second embodiment of a mask according to the present invention.
- FIG. 3 is a partial structural schematic view of a semi-hollowed region in a second embodiment of the mask of the present invention.
- Figure 4 is a flow chart showing a first embodiment of a method of manufacturing a mask according to the present invention.
- Figure 5 is a flow chart showing a second embodiment of a method of manufacturing a mask according to the present invention.
- FIG. 6 is a schematic view showing a skeleton in a second embodiment of a method for manufacturing a mask according to the present invention.
- FIG. 7 is a schematic view showing an OLED package structure made by using a mask in a second embodiment of a method for fabricating a mask according to the present invention.
- FIG. 8 is a flow chart of an embodiment of an OLED device packaging method of the present invention.
- the mask 100 includes a hollowed out region 110 and a non-hollowed region 120 disposed around the hollowed out region 110; and further includes at least one strip-shaped semi-hollowed region 130, half
- the hollowed out area 130 is disposed in the hollowed out area 110, and the non-hollowed area 120 is connected to the beginning and the end, respectively.
- the hollow region 110 is a portion that is removed by a process such as laser cutting, photolithography, and etching to form a hollow shape.
- the coating material can form a thick film layer through the hollow region 110 in a large amount.
- the non-hollowed region 120 that is, the portion that is not treated, does not pass through the non-hollowed region 120 at the time of coating, nor can it form a film layer.
- the semi-hollowed region 130 is a non-hollowed portion of the partially hollowed out portion.
- the coating material can pass through the semi-hollowed region 130 to form a thin film layer.
- the hollow pattern of the semi-hollowed area 130 can be arbitrarily set as needed. In one embodiment, in order to make the coating uniform and flat, the semi-hollowed pattern should be regular and tidy.
- the mask 100 may be a metal mask such as stainless steel; it may also be made of an inorganic material such as a metal oxide, a metal sulfide or a metal nitride.
- the thickness of the film formed by using the mask 100 is not uniform, if the mask is used in the process of fabricating the OLED package, a thinned thinned region is formed in the film layer, and if the flexible OLED is bent, The bending point is just in the thinned zone, which reduces the possibility of film breakage.
- the mask disclosed in the embodiment includes a hollowed out area and a non-hollowed area disposed around the hollowed out area; and further includes at least one strip-shaped semi-hollowed area, the semi-hollowed area is disposed in the hollowed out area, and the first end and the tail end are respectively connected Non-hollow area.
- the film layer formed by the mask has a thinned region, so that the first passivation layer of the entire OLED package structure does not break due to a large stress during bending, thereby ensuring bending resistance of the flexible OLED. Sex.
- the mask 200 includes a hollowed out region 210 and a non-hollowed region 220 disposed around the hollowed out region 210; and further includes a plurality of strip-shaped semi-hollowed regions 230 arranged in a crisscrossing manner in the hollowed out region 210, each half The first and last ends of the hollow area 230 are respectively connected to the non-hollow area 220.
- a frame 240 may be added to the periphery of the non-hollowed area 220.
- the semi-hollowed region 230 may include a uniformly arranged via region 231 and a non-via region 232, which may be circular, rectangular or other shapes, and only the via region 231 during the coating process.
- the coating material can be passed through, and the hollowed out region 210 can all pass through the coating material, so that the thinned region formed in the semi-hollowed region 230 is thinner than the normal region formed in the hollowed region 240.
- a flow chart of a first embodiment of a method for manufacturing a mask according to the present invention includes:
- Step 401 providing a plate
- the plate material may be a metal plate material, a metal oxide, a metal sulfide or a metal nitride, or a material such as glass.
- Step 402 forming at least one hollowed out area on the sheet material
- Step 403 Forming a semi-hollowed space on the skeleton between the hollow regions.
- a flow chart of a second embodiment of a method for fabricating a mask according to the present invention includes:
- Step 501 providing a plate
- Step 502 Define a plurality of rectangular hollow areas of the array distribution on the sheet;
- Step 503 performing hollowing treatment in the hollow region by means of etching or laser cutting;
- a plurality of hollowed out regions 601 are formed on the sheet 600 by an etching or laser cutting process.
- Step 504 forming a plurality of evenly distributed through holes on the skeleton between the hollow regions;
- each of the two hollow regions 601 is a skeleton 602, and the skeleton 602 is through-hole processed to form a semi-hollowed region. It is worth noting that the skeleton on the edge does not need to be through-hole processing, that is, a non-hollowed region is formed.
- Step 505 removing burrs on the plate, so that the edge of the plate is cut or etched is smooth;
- Step 506 Providing a frame for mounting the processed sheet to the frame to produce a mask.
- the two films have thinner thinned regions. It can prevent the passivation layer from being broken when bent due to its own large stress, which ensures the flexural resistance of the flexible OLED.
- a flowchart of an embodiment of an OLED device packaging method of the present invention includes:
- Step 801 providing a substrate substrate
- a glass substrate When a flexible OLED panel is fabricated, a bendable plastic substrate can also be used.
- Step 802 fabricating an OLED device on the substrate.
- the OLED device includes an organic film in which an organic film is sandwiched between a cathode and an anode metal, and when a voltage is applied to the two electrodes, the organic film emits light.
- Step 803 forming a first passivation layer on the OLED device by using the first mask
- the first mask is a mask as in the foregoing embodiment.
- the first passivation layer is generally made of an inorganic material such as a metal oxide, a metal sulfide or a metal nitride, for example, the metal oxide includes calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, and the like.
- the metal oxide includes calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, and the like.
- Aluminum oxide, chromium oxide, tin dioxide, nickel oxide, antimony pentoxide; metal sulfides include titanium disulfide, iron sulfide, chromium disulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide, Cobalt trisulfide, antimony trisulfide, lead sulfide, antimony trisulfide, antimony sulfide, zirconium disulfide, etc., and metal nitrides include silicon nitride, aluminum nitride, and the like.
- Step 804 forming a buffer layer on the first passivation layer
- the buffer layer is generally an organic material such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), polychlorinated Ethylene (PVC), polystyrene (PS), polymethyl methacrylate (PMMA), polybutylene terephthalate (PBT), polysulfone (PSO), polyparaphenylene sulfone (PES) ), polyethylene (PE), polypropylene (PP), silicone (Silicone), polyamide (PA), polyvinylidene fluoride (PVDF), ethylene-vinyl acetate copolymer (EVA), ethylene to ethylene Alcohol copolymer (EVAL), polyacrylonitrile (PAN), polyvinyl acetate (PVAC), parylene, polyurea or polytetrafluoroethylene (PTFE), epoxy resin (epoxyresin) )Wait.
- organic material such as polyethylene terephthalate (PE
- Step 805 forming a second passivation layer on the buffer layer by using the second mask
- the second mask is a mask as in the foregoing embodiment.
- the semi-hollow region of the first mask and the semi-hollow region of the second mask should also be Interval staggered settings.
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Abstract
一种掩膜板（100，200）及其制造方法、OLED器件封装方法，该掩膜板（100，200）包括镂空区（110，210）以及围绕该镂空区设置的非镂空区（120，220）；还包括至少一带状半镂空区（130，230），该半镂空区设置在该镂空区中，且首尾分别连接该非镂空区。采用该掩膜板，能增强柔性OLED器件封装部分的弯折性能。
Description
【技术领域】
本发明涉及有机电致发光显示领域，特别是涉及一种掩膜板及其制造方法、OLED器件封装方法。
【背景技术】
有机发光二极管又称为有机电激光显示（Organic Light-Emitting
Diode，OLED），是新一代的显示器，通过在OLED基板上制作有机薄膜，其中有机薄膜被包在阴极和阳极金属之间，给两电极加电压，则有机薄膜会发光。OLED显示器有诸多优点，其中包括可实现柔性显示。如以可绕曲的塑胶基板等为载体，再配合薄膜封装制程，即可实现可绕曲的OLED面板。
目前OLED薄膜封装主要采用钝化层和缓冲层叠层的结构，钝化层一般采用无机材料，如SiNx；缓冲层常采用有机或偏有机类材料。
因整体薄膜封装厚度为微米级，且无机膜厚时应力较大，在弯折时易发生断裂，水氧气会透过这个断裂处老化OLED器件，使得柔性OLED器件封装部分的耐弯折性能变差。
【发明内容】
本发明主要解决的技术问题是提供一种掩膜板及其制造方法、OLED器件封装方法，能够增强柔性OLED器件封装部分的弯折性能。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种掩膜板，掩膜板包括镂空区以及围绕镂空区设置的非镂空区；还包括至少一带状半镂空区，半镂空区设置在镂空区中，且首尾分别连接非镂空区。
其中，掩膜板包括多条带状半镂空区，且纵横交错地排列在镂空区中，每个半镂空区的首尾分别连接非镂空区。
其中，半镂空区包括多个均匀设置的通孔。
其中，所述通孔是采用激光切割、光刻或刻蚀工艺形成的。
其中，所述掩膜板由金属材料或金属氧化物材料制成。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种掩膜板的制造方法，其中，方法包括：提供一板材；在板材上形成至少一镂空区；在镂空区之间的骨架上形成半镂空区。
其中，在板材上形成至少一镂空区的步骤，具体为：在板材上定义阵列分布的多个矩形镂空区；采用蚀刻或激光切割的方式在镂空区进行镂空处理。
其中，在镂空区之间的骨架上形成半镂空区的步骤，具体为：在镂空区之间的骨架上形成多个均匀分布的通孔。
其中，在镂空区之间的骨架上形成半镂空区的步骤之后，还包括：去除板材上的毛刺，使得板材被切割或者蚀刻后的边缘平滑；提供一框架，将经过处理后的板材安装到框架上，以制得掩膜板。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种OLED器件封装方法，封装方法包括：提供一衬底基板；在衬底基板上制作一OLED器件；利用第一掩膜板在OLED器件上形成一第一钝化层；其中，第一掩膜板包括镂空区以及围绕所述镂空区设置的非镂空区；还包括至少一带状半镂空区，所述半镂空区设置在所述镂空区中，且首尾分别连接所述非镂空区；其中，所述第一钝化层上对应所述半镂空区的区域形成减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
其中，利用掩膜板在OLED器件上形成一第一钝化层的步骤之后，还包括：在第一钝化层上形成一缓冲层；利用第二掩膜板在缓冲层上形成一第二钝化层；其中，第二掩膜板包括镂空区以及围绕所述镂空区设置的非镂空区；还包括至少一带状半镂空区，所述半镂空区设置在所述镂空区中，且首尾分别连接所述非镂空区；其中，所述第一钝化层上对应所述半镂空区的区域形成减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
其中，第一掩膜板的半镂空区与第二掩膜板的半镂空区间隔交错设置。
其中，所述掩膜板包括多条所述带状半镂空区，且纵横交错地排列在所述镂空区中，每个所述半镂空区的首尾分别连接所述非镂空区。
其中，所述半镂空区包括多个均匀设置的通孔。
其中，所述OLED器件为柔性OLED器件。
本发明的有益效果是：区别于现有技术的情况，本发明公开的掩膜板包括镂空区以及围绕镂空区设置的非镂空区；还包括至少一带状半镂空区，半镂空区设置在镂空区中，且首尾分别连接非镂空区。通过该掩膜板制成的膜层具有减薄区，能够使得整个OLED的封装结构在弯折时第一钝化层不会因为本身的应力较大而产生断裂，保证了柔性OLED耐弯折性。
【附图说明】
图1是本发明掩膜板第一实施方式的结构示意图；
图2是本发明掩膜板第二实施方式的结构示意图；
图3是本发明掩膜板第二实施方式中半镂空区的局部结构示意图；
图4是本发明掩膜板的制造方法第一实施方式的流程图；
图5是本发明掩膜板的制造方法第二实施方式的流程图；
图6是本发明掩膜板的制造方法第二实施方式中骨架示意图；
图7是本发明掩膜板的制造方法第二实施方式中采用掩膜版制成的OLED封装结构示意图；
图8是本发明OLED器件封装方法一实施方式的流程图。
【具体实施方式】
参阅图1，本发明掩膜板第一实施方式的结构示意图，该掩膜板100包括镂空区110以及围绕镂空区110设置的非镂空区120；还包括至少一带状半镂空区130，半镂空区130设置在镂空区110中，且首尾分别连接非镂空区120。
镂空区110即采用激光切割、光刻和刻蚀等工艺去除掉的一部分，形成镂空状，在镀膜时，镀膜材料可以大量的通过该镂空区110形成较厚的膜层。
非镂空区120即未进行处理的部分，在镀膜时，镀膜材料不能通过该非镂空区120，也不能形成膜层。
半镂空区130即部分镂空部分非镂空的区域，在镀膜时，镀膜材料可以少量通过该半镂空区130，形成较薄的膜层。同时，该半镂空区130的镂空图形可以根据需要任意设置，在一种实施方式中，为了使镀膜均匀、平整，半镂空的图形应当是有规律并整齐的。
该掩膜板100可以是金属掩膜板，如不锈钢；也可以采用金属氧化物、金属硫化物或金属氮化物等无机材料制作。
由于采用该掩膜板100制成的膜厚度不均一，在制作OLED封装的工艺中若采用该掩膜板，就会使膜层中有较薄的减薄区，若柔性OLED弯折时，该弯折点正好在减薄区，则可以减小膜层断裂的可能。
区别于现有技术，本实施方式公开的掩膜板包括镂空区以及围绕镂空区设置的非镂空区；还包括至少一带状半镂空区，半镂空区设置在镂空区中，且首尾分别连接非镂空区。通过该掩膜板制成的膜层具有减薄区，能够使得整个OLED的封装结构在弯折时第一钝化层不会因为本身的应力较大而产生断裂，保证了柔性OLED耐弯折性。
参阅图2，该掩膜板200包括镂空区210以及围绕镂空区210设置的非镂空区220；还包括多条带状半镂空区230，且纵横交错地排列在镂空区210中，每个半镂空区230的首尾分别连接非镂空区220。
另外，非镂空区220的***还可以增加一框架240。
如图3所示，半镂空区230可以是包括均匀排列的通孔区231和非通孔区232，该通孔可以是圆形、矩形或其他形状，在镀膜过程中，只有通孔区231能通过镀膜材料，而镂空区210能够全部通过镀膜材料，因此在半镂空区230形成的减薄区比在镂空区240形成的正常区要薄。
参阅图4，本发明掩膜板的制造方法第一实施方式的流程图，该方法包括：
步骤401：提供一板材；
该板材可以是金属板材，也可以是金属氧化物、金属硫化物或金属氮化物等，也可以是玻璃等材料。
步骤402：在板材上形成至少一镂空区；
一般是通过激光金属切割，也可以通过光刻、刻蚀的工艺完成。
步骤403：在镂空区之间的骨架上形成半镂空区。
参阅图5，本发明掩膜板的制造方法第二实施方式的流程图，该方法包括：
步骤501：提供一板材；
步骤502：在板材上定义阵列分布的多个矩形镂空区；
步骤503：采用蚀刻或激光切割的方式在镂空区进行镂空处理；
如图6所示，在板材600上采用蚀刻或激光切割工艺形成多个镂空区601。
步骤504：在镂空区之间的骨架上形成多个均匀分布的通孔；
如图6所示，每两个镂空区601之间即为骨架602，对骨架602进行通孔加工，以形成半镂空区。值得注意的是，边缘上骨架无需进行通孔加工，即形成非镂空区。
步骤505：去除板材上的毛刺，使得板材被切割或者蚀刻后的边缘平滑；
步骤506：提供一框架，将经过处理后的板材安装到框架上，以制得掩膜板。
如图7所示，在OLED封装结构的制造过程中，运用该掩膜板形成第一钝化层730及第二钝化层750时，会使这两层膜具有较薄的减薄区，能够很好的防止钝化层因为本身的应力较大而在弯折时产生断裂，保证了柔性OLED耐弯折性。
参阅图8，本发明OLED器件封装方法一实施方式的流程图，该方法包括：
步骤801：提供一衬底基板；
一般是玻璃基板，在制作柔性的OLED面板时，也可以采用可弯折的塑料基板。
步骤802：在衬底基板上制作一OLED器件；
OLED器件包括有机薄膜，其中有机薄膜被包在阴极和阳极金属之间，给两电极加电压，则有机薄膜会发光。
步骤803：利用第一掩膜板在OLED器件上形成一第一钝化层；
其中，第一掩膜板是如前述实施方式中的掩膜板。
该第一钝化层一般采用金属氧化物、金属硫化物或金属氮化物等无机材料制作，例如金属氧化物包括氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍、五氧化二锑；金属硫化物包括二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈、二硫化锆等，金属氮化物包括氮化硅、氮化铝等。
步骤804：在第一钝化层上形成一缓冲层；
缓冲层一般是有机材料，例如聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚碳酸酯(PC)、聚酰亚胺(PI)、聚氯乙烯(PVC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸丁二醇酯(PBT)、聚砜(PSO)、聚对苯二乙基砜(PES)、聚乙烯(PE)、聚丙烯(PP)、聚硅氧烷(Silicone)、聚酰胺(PA)、聚偏二氟乙烯(PVDF)、乙烯～醋酸乙烯共聚物(EVA)、乙烯～乙烯醇共聚物(EVAL)、聚丙烯腈(PAN)、聚乙酸乙烯酯(PVAC)、聚对二甲苯基(Parylene)、聚脲(Polyurea)或聚四氟乙烯(PTFE)、环氧树脂(epoxyresin)等。
步骤805：利用第二掩膜板在缓冲层上形成一第二钝化层；
其中，第二掩膜板是如前述实施方式中的掩膜板。
值得注意的是，为了保证第一钝化层和第二钝化层中的减薄区能够间隔交错设置，因此第一掩膜板的半镂空区与第二掩膜板的半镂空区也应该间隔交错设置。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。
Claims (15)
- 一种掩膜板，其中，所述掩膜板包括镂空区以及围绕所述镂空区设置的非镂空区；还包括至少一带状半镂空区，所述半镂空区设置在所述镂空区中，且首尾分别连接所述非镂空区。
- 根据权利要求1所述的掩膜板，其中，所述掩膜板包括多条所述带状半镂空区，且纵横交错地排列在所述镂空区中，每个所述半镂空区的首尾分别连接所述非镂空区。
- 根据权利要求1所述的掩膜板，其中，所述半镂空区包括多个均匀设置的通孔。
- 根据权利要求3所述的掩膜板，其中，所述通孔是采用激光切割、光刻或刻蚀工艺形成的。
- 根据权利要求1所述的掩膜板，其中，所述掩膜板由金属材料或金属氧化物材料制成。
- 一种掩膜板的制造方法，其中，所述方法包括：提供一板材；在所述板材上形成至少一镂空区；在所述镂空区之间的骨架上形成半镂空区。
- 根据权利要求6所述的方法，其中，在所述板材上形成至少一镂空区的步骤，具体为：在所述板材上定义阵列分布的多个矩形镂空区；采用蚀刻或激光切割的方式在所述镂空区进行镂空处理。
- 根据权利要求6所述的方法，其中，在所述镂空区之间的骨架上形成半镂空区的步骤，具体为：在所述镂空区之间的骨架上形成多个均匀分布的通孔。
- 根据权利要求6所述的方法，其中，在所述镂空区之间的骨架上形成半镂空区的步骤之后，还包括：去除所述板材上的毛刺，使得所述板材被切割或者蚀刻后的边缘平滑；提供一框架，将所述经过处理后的所述板材安装到所述框架上，以制得所述掩膜板。
- 一种OLED器件封装方法，其中，所述封装方法包括：提供一衬底基板；在所述衬底基板上制作一OLED器件；利用第一掩膜板在所述OLED器件上形成一第一钝化层；其中，所述第一掩膜板包括镂空区以及围绕所述镂空区设置的非镂空区；还包括至少一带状半镂空区，所述半镂空区设置在所述镂空区中，且首尾分别连接所述非镂空区；其中，所述第一钝化层上对应所述半镂空区的区域形成减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
- 根据权利要求10所述的方法，其中，利用掩膜板在所述OLED器件上形成一第一钝化层的步骤之后，还包括：在所述第一钝化层上形成一缓冲层；利用第二掩膜板在所述缓冲层上形成一第二钝化层；其中，所述第二掩膜板包括镂空区以及围绕所述镂空区设置的非镂空区；还包括至少一带状半镂空区，所述半镂空区设置在所述镂空区中，且首尾分别连接所述非镂空区；其中，所述第二钝化层上对应所述半镂空区的区域形成减薄区，所述减薄区的厚度小于所述第二钝化层的厚度。
- 根据权利要求11所述的方法，其中，所述第一掩膜板的半镂空区与所述第二掩膜板的半镂空区间隔交错设置。
- 根据权利要求10所述的方法，其中，所述掩膜板包括多条所述带状半镂空区，且纵横交错地排列在所述镂空区中，每个所述半镂空区的首尾分别连接所述非镂空区。
- 根据权利要求10所述的方法，其中，所述半镂空区包括多个均匀设置的通孔。
- 根据权利要求10所述的方法，其中，所述OLED器件为柔性OLED器件。
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