WO2016173481A1 - 用于自旋电子器件钉扎层的快速热处理方法和装置 - Google Patents

用于自旋电子器件钉扎层的快速热处理方法和装置 Download PDF

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WO2016173481A1
WO2016173481A1 PCT/CN2016/080195 CN2016080195W WO2016173481A1 WO 2016173481 A1 WO2016173481 A1 WO 2016173481A1 CN 2016080195 W CN2016080195 W CN 2016080195W WO 2016173481 A1 WO2016173481 A1 WO 2016173481A1
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layer
wafer
transparent insulating
magnetic field
substrate
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PCT/CN2016/080195
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English (en)
French (fr)
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迪克·詹姆斯·G
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江苏多维科技有限公司
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Priority to US15/570,093 priority Critical patent/US11069544B2/en
Priority to EP16785912.3A priority patent/EP3291318B1/en
Priority to JP2017555796A priority patent/JP6883522B2/ja
Publication of WO2016173481A1 publication Critical patent/WO2016173481A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Definitions

  • the invention relates to the field of GMR spin valves and TMR magnetic sensors, and in particular to a rapid heat treatment method and device for a spintronic device.
  • Magnetic sensors have been widely used in modern measurement systems to measure a variety of physical quantities, including but not limited to physical quantities such as magnetic field strength, current, displacement, and direction.
  • a variety of sensors have been used to measure physical quantities such as magnetic fields.
  • the push-pull bridge sensor has higher sensitivity than the single-resistance, reference-resistance bridge sensor, and has temperature compensation to suppress the effects of temperature drift.
  • the push-pull bridge requires the magnetic moments of the magnetic tunnel junctions of the two bridge arm resistors to be opposite in direction, and the magnetic tunnel junction MTJ usually deposited on the same silicon wafer has the same magnetic field strength required for the magnetic moment to reverse.
  • the magnetic moment of the magnetoresistive pinning layer on the same silicon wafer is usually the same. Therefore, it is somewhat difficult to deposit adjacent magnetoresistors with opposite magnetic moments on the same silicon wafer.
  • Laser direct writing is a type of laser annealing in which a laser beam scans the surface to limit the annealing process at specific locations on the wafer surface.
  • Laser annealing systems provide fast ramp rates, fast cooling rates, and reduced thermal budgets.
  • the research and effects of laser radiation on solids can be traced back to 1971, and many different types of laser annealing systems have been used in processing systems for semiconductor devices in dopant activation.
  • solids are bombarded by a beam of photons focused on the sample. These photons interact with the energy delivered by the sample to the crystal lattice, which locally heats the sample. The wavelength of light determines how energy is absorbed into the solid.
  • Laser annealing technology is emerging as an emerging technology in the field of magnetic sensors.
  • an external magnetic field is provided by two assembled permanent magnets, in such a way that a relatively uniform magnetic field appears in the magnetic field between the two magnetic poles.
  • the magnetic field strength can be varied from 15 to 335 kA/M by changing the distance between the magnets.
  • the MTJ wafer is placed on a magnet that is scanned across the surface to heat certain areas.
  • the disadvantage of this technique is that it is slow and not very accurate.
  • U.S. Patent Publication No. US 2007/0187670 A1 discloses a photothermal annealing hood and method which enhances thermal annealing accuracy and spatial resolution, wherein the photothermal annealing cap layer in turn comprises a heat dissipating layer in the lining
  • the reflective layer is disposed on the heat dissipation layer
  • the transparent cover layer is disposed on the reflective layer.
  • the photothermal annealing cover can be used as a gate in the field effect device.
  • the annealing device includes a laser source 1, a mirror 2, and a focusing objective lens 5.
  • CCD camera 3, movable platform 9, X, Y-axis electromagnet pair 7-8, magnetic field detector 10, temperature sensor 11, etc. can achieve local heating and local magnetic moment reversal on the same silicon wafer, the resulting push
  • the pull-type sensor has high sensitivity, temperature compensation and noise cancellation, and is suitable for mass production.
  • push-pull bridges require different bridge arms with ferromagnetic pinned layers placed in different directions, and there is no good technical or commercial equipment to perform the process.
  • a device for rapid thermal processing of a spin-on device pinning layer comprising a rapid thermal annealing source, a reflector, a magnet, a wafer, the reflector comprising at least one transparent insulating layer and a reflective layer, a magnet for generating a constant magnetic field, the transparent insulating layer and the reflective layer being sequentially coated on the wafer, the light source for transmitting incident light to the wafer through the patterned reflector
  • the heating zone by controlling the exposure time of the light source, heats the heated area on the wafer above the blocking temperature of its antiferromagnetic layer, and then cools down in the applied magnetic field to turn off the magnetic field.
  • the light source is a single bulb or array of bulbs.
  • the device further includes a slit for limiting the incidence of light incident on the wafer.
  • the wafer is movable and disposed on a conveyor belt.
  • the device is disposed in a rapid thermal annealing furnace chamber.
  • the magnet is a permanent magnet.
  • the magnet is a superconducting permanent magnet.
  • the reflector comprises two transparent insulating layers and a reflective layer, wherein the reflective layer is located in the middle of the two transparent insulating layers.
  • the transparent insulating layer is TEOS, SiN or a photoresist.
  • the material of the reflective layer is any material capable of reflecting infrared light, visible light or ultraviolet light.
  • the material of the reflective layer is a metal.
  • the transparent insulating layer is an anti-reflection layer.
  • the wafer comprises a substrate and an MR film layer
  • the substrate is made of silicon and the substrate comprises an electronic circuit
  • the MR film layer is deposited on the substrate.
  • Another aspect of the present invention also provides a method for rapid thermal processing of a spintronic layer of a spintronic device, comprising the steps of:
  • a reflective cover is disposed above the wafer, including at least one transparent insulating layer, and a reflective layer, the patterned reflective cover, while the portion under the reflective cover is heated while the other areas remain cool;
  • a slit is disposed between the reflector and the light source for limiting the incidence of light incident on the wafer; and moving the wafer, the light source can heat the crystal not blocked by the reflector when the wafer moves below the slit Round part
  • the heated region on the wafer is heated above its antiferromagnetic layer blocking temperature, then cooled in the applied magnetic field, the magnetic field is turned off, and the antiferromagnetic layer is fixed.
  • the reflector comprises two transparent insulating layers and a reflective layer, wherein the reflective layer is located between the two transparent insulating layers.
  • the fast annealing source comprises a single bulb or an array of bulbs.
  • the transparent insulating layer may be TEOS, SiN or a photoresist.
  • the transparent insulating layer is an anti-reflection layer.
  • the reflective layer material is capable of reflecting any one of infrared light, visible light or ultraviolet light.
  • the material of the reflective layer is a metal.
  • the wafer comprises a substrate and an MR film layer
  • the substrate is made of silicon and the substrate comprises an electronic circuit
  • the MR film layer is deposited on the substrate.
  • the invention has the following advantages: the method and the device using the rapid thermal annealing improve the spatial resolution of the laser annealing, reduce the processing time, can quickly produce the wafer, and have excellent performance, and is suitable for mass production.
  • Figures 1(a) and 1(b) are laser direct writing systems for spintronic devices.
  • FIG. 2 is a schematic view of a laser heating auxiliary annealing device for a magnetic film.
  • Figure 3 is a schematic diagram of magnetic thermal annealing through a mask.
  • Figure 4 is a diagram of the thermomagnetic reset process of the pinned layer.
  • Figure 5 is a schematic cross-sectional view of a reflector wafer.
  • Figure 6-7 is a schematic view of heating through a mask.
  • Figure 8 is a schematic view of the design of a permanent magnet.
  • Figure 9 is a schematic illustration of the overall film system.
  • FIG. 3 is a schematic view of magnetic thermal annealing by a reflector according to the present invention.
  • the wafer 34 is coated with a transparent insulating layer 33 and a reflective layer 32.
  • the reflective layer is covered and etched to expose a region to be heated to be constant.
  • Speed at RTA Rapid Thermal Anneal, rapid thermal annealing
  • the RTA slit lamp 31 heats the area of the MR wafer where the film is not covered; when the wafer 34 passes through the narrow At the edge of the seam, the heated area is gradually cooled and then applied to the magnetic field.
  • the direction of the arrow in the figure is the moving direction of the wafer, moving from right to left.
  • FIG. 4 is a diagram of the thermomagnetic reset process of the pinned layer.
  • 41 is a ferromagnetic moment
  • 42 is a ferromagnetic free layer
  • 43 is an insulated tunnel junction
  • 44 is a reference ferromagnetic layer
  • 45 is a copper exchange.
  • 46 is a ferromagnetic pinning layer
  • 47 is an antiferromagnetic layer.
  • the saturation magnetic field is applied in Fig. 4(b)
  • the heating temperature exceeds the antiferromagnetic
  • the magnetization direction applied to the ferromagnetic layer of the saturation magnetic field is uniform.
  • the light source is turned off, and then the applied magnetic field is cooled.
  • the magnetization direction of the pinning layer is When consistent, since the antiferromagnetic material cooling temperature is lower than its blocking temperature, The interface rotation between the ferromagnetic layer and the antiferromagnetic layer is locked. Finally, the magnetic field is turned off and the antiferromagnetic layer is fixed as shown in Figure 4(d).
  • the barrier temperature TB and the Neel temperature TN are defined.
  • TN is the transition phase between antiferromagnetic and paramagnetic.
  • the above TN, antiferromagnetic rotation is not locked in place for the magnetic field and temperature.
  • TB is the blocking temperature, and the blocking temperature can be aligned with the magnetic field at all rotations.
  • TB always less than TN, TB is controlled by the particle size of the antiferromagnetic layer. The blocking temperature of large particles is higher than that of small particles. For unlimited particles, TB Equal to TN.
  • the antiferromagnetic layer and the magnet pinning layer must be heated to a temperature greater than TB of the antiferromagnetic layer, and then cooled below TB while a magnetic field is applied to fix the direction of the magnetic moment of the pinned layer.
  • 5 is a schematic cross-sectional view of a reflector and a wafer
  • 51 is an insulating transparent layer
  • 52 is a reflective layer
  • 53 is also an insulating transparent layer
  • 54 is an MR film (MAGNETO-RESITIVEHEAD magnetoresistive head) layer
  • 55 is a substrate.
  • 56 is a heated area of the patterned opening.
  • FIG 6-7 is a schematic diagram of heating through a reflector.
  • the incident light is irradiated to heat the MR film layer, most of which is reflected back, and part of the incident light is reflected by the pattern.
  • the hood window passes through, is received by the surface of the MR film layer, and is converted to heat. If the exposure time is short, it is likely that only a portion of the wafer structure under the slit is heated. However, since the heating process is too dependent on the exposure time, this leads to poor results, and the heating time constant and the thermal environment of the MR film layer determine the spatial resolution of the heating region.
  • Figure 7 reflects a better heating structure.
  • the metal material of the MTJ has a higher thermal conductivity than the insulator, so that even if the ends of the MTJ are not perfectly aligned with the nip, the MTJ material can be heated only.
  • the slits need only be precise enough to ensure that heat is available to a portion of the MTJ and heat transfer may be sufficient to heat the entire MTJ.
  • the poor thermal conductivity of the insulating material may prevent heating where the reflector covers. Therefore, the heat transfer of the MTJ is much greater than the heat transfer of the insulating material. If the MTJ can be properly patterned and the range between the MTJs is set large enough, the selectivity of the local heating process will be better improved.
  • the MR film can be patterned such that there is a discontinuous MR film structure under the window of the patterned reflector, the film structure needs to be fully heated, so that the boundary of the heating region can pass through the reflector and the MR structure.
  • the edge is decided.
  • the transparent insulating layer may be an anti-reflective coating comprising a transparent dielectric (for maximizing the absorption half-wave thickness of the incident light), such as SiN or a polymer, a polymer such as a photoresist, or the like.
  • a transparent dielectric for maximizing the absorption half-wave thickness of the incident light
  • the reflective material can be any material that can reflect infrared, visible or ultraviolet light, and AL is the most common choice.
  • the MR film layer may be composed of a GMR or MTJ film which may be treated before or after heat treatment.
  • the substrate can be any smooth substrate on which the MR film can be deposited. It is usually Si, which can also contain electronic circuitry.
  • Fig. 8 is a schematic view showing the design of a permanent magnet having two magnetic poles 36, and a permanent magnet is disposed between the two magnetic poles, thus generating a magnetic field 37.
  • the design is to concentrate the magnetic flux of the permanent magnet so that the magnetic flux is strong and parallel to the surface of the silicon wafer.
  • the magnetic pole is mainly composed of a metal alloy, including cobalt, iron, and nickel.
  • the permanent magnet has a high energy density at the notch, so that there is a strong magnetic field strength, and rare earth is a good choice.
  • Figure 9 is a schematic diagram of the overall film system. As shown in Figure 9, the entire film is heated by a pulsed lamp of a magnetic field.
  • the RTA bulb array 91 is used to heat the wafer, and the bulb can be pulsed to set the heating time or moved through the chamber 92. Wafer.
  • the oven chamber may have a controlled environment of vacuum or nitrogen and may not only be controlled by the inclusion of air.
  • the magnet can be a very permanent magnet array or a superconducting magnet.
  • a uniform field of at least 10,000 e is provided across the entire wafer surface.
  • a reflector is placed on the wafer to select the areas that will be heated.
  • the wafer holder 94 holds the wafer and, if necessary, preheats the wafer to a temperature that is lower than the barrier temperature of the antiferromagnetic layer, and in other implementations, it may also be used for cooling, such that Make the cooling time faster.

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Abstract

一种用于本地编程的自旋电子器件钉扎层的快速热处理装置及方法，该装置包括快速热退火光源（31）、反射罩、磁铁、晶圆（34）、基片（55），其中光源用于加热基片，反射罩至少包括一个透明的绝缘层（33,51,53）和反射层（32,52），磁铁用于产生恒定的磁场，通过控制曝光时间，让晶圆（34）的加热区域加热到反铁磁层（47）阻隔温度之上，然后在应用的磁场中冷却下来，关闭磁场，反铁磁层（47）被固定。该快速热处理的方法采用快速热退火提高了激光退火的空间分辨率，且性能优良，适合大批量生产。

Description

用于自旋电子器件钉扎层的快速热处理方法和装置
技术领域
本发明涉及GMR自旋阀、TMR磁传感器领域，特别涉及自旋电子器件的快速热处理方法和装置。
背景技术
磁性传感器已经广泛用于现代测量***，用来测量多种物理量，包括但不仅限于磁场强度、电流、位移、方向等物理量。之前已经有多种传感器可以用以测量磁场等物理量。
推挽桥式传感器具有比单电阻、参考电阻桥式传感器更高的灵敏度，同时具有温度补偿功能，能够抑制温度漂移的影响。推挽式桥要求两个桥臂电阻中的磁性隧道结的钉扎层磁矩方向相反，而通常沉积在同一硅片上的磁性隧道结MTJ由于其磁矩翻转所需要的磁场强度大小相同，因而在同一个硅片上磁电阻钉扎层磁矩通常都相同。因此，在同一个硅片上沉积两个钉扎层磁矩相反的相邻磁电阻有点困难。目前人们常用的是两次成膜的工艺，分两次分别沉积钉扎层方向相反的MTJ元件，这使得制作工艺复杂，同时第二次工艺进行退火时会明显影响第一次沉积的薄膜，使得两次成膜的一致性很差，很难对电桥桥臂进行匹配，会产生很大的偏移，影响传感器的整体性能，目前没有很好的技术或者市售的设备能够完成这个过程。
激光直写技术是激光退火的一种，其中，激光束扫描表面以限制晶圆表面特定位置上的退火过程。激光退火***提供快速升温速率，快速冷却速率，并降低热预算。激光辐射对固体的研究与效果可以追溯到1971年，许多不同类型的激光退火***已经用于掺杂剂活化中的半导体器件的处理***。在激光照射期间，固体通过聚焦在样品上的光子束进行轰击。这些光子与样品传递到晶格的能量相互作用，这种能量会局部加热样品。光的波长决定了能量是如何被吸收到固体上。激光退火技术在磁传感器领域中作为一种新兴的技术发展。
然而，现有技术中，已经有通过激光直写技术使用快速偏离聚焦激光照射在自旋电子层积中进行交换偏置磁化方向的重新排列的技术。这种技术已经得到发展，用于MTJ传感器的钉扎层的设置上，如图1所示。如图所述，11为调制器，12为缝隙，13为激光束衰减，14为电流扫描，15为光学镜片，激光***提供连续和脉冲激光辐射，激光束通过电流计扫描仪快速偏移，聚焦在焦距为80mm的光学镜片上，焦距半径为12μm。附图1（b）中，通过两个装配组成的永磁铁提供外部磁场，通过这种方式，两个磁极之间的磁场出现了相对均匀的磁场。通过改变磁铁之间的距离磁场强度可以在15到335kA/M的范围内变化。MTJ晶圆设置在磁铁上，激光扫描通过表面，以加热某些区域。然而，这个技术的缺点是它很慢，并且精度不高。
另外，在公开号为US2007/0187670A1的美国专利公开了一种光热退火罩和方法，该发明增强了热退火精度和空间分辨率，其中光热退火罩层都依次包括热耗散层位于衬底，反光层设置在热耗散层上，透明覆盖层设置反光层上，该光热退火罩在场效应装置中可以用作栅极。
在申请号为201110134982.x的中国专利申请公开了一种单一芯片磁性传感器及其激光加热辅助退火装置与方法，如图2所示，退火装置包括有激光源1，反光镜2，聚焦物镜5，CCD相机3，可移动平台9，X、Y轴电磁铁对7-8，磁场探测器10，温度传感器11等，能够在同一硅片上实现局部加热和局部磁矩翻转，制得的推挽式传感器具有灵敏度高，具备温度补偿功能和噪声抵消的特点，并且适合大规模批量生产等特点。然而，推挽桥梁需要不同的桥臂的铁磁被钉扎层设置在不同的方向，而且没有很好的技术或商用设备执行过程的能力。
发明内容
本发明的目的是提供一种用于自旋电子器件钉扎层的快速热处理方法和装置，在推挽桥中制造单芯片的TMR、GMR或MTJ传感器，使得生产出来的TMR或者GMR、MTJ传感器性能优良。
为实现上述技术目的，达到上述技术效果，本发明通过以下技术方案实现：
一种用于自旋电子器件钉扎层的快速热处理的装置，包括快速热退火光源、反射罩、磁铁、晶圆，所述的反射罩包括至少一个透明绝缘层和一反射层，所述的磁铁用于产生恒定的磁场，所述透明绝缘层和所述反射层依次涂覆在所述晶圆上，所述光源用于通过图形化的所述反射罩发送入射光至所述晶圆的加热区域，通过控制所述的光源的曝光时间，让所述的晶圆上的加热区域加热到其反铁磁层的阻隔温度之上，然后在应用的磁场中冷却下来，关闭磁场。
优选的，所述光源是单个灯泡或者灯泡阵列。
优选的，所述装置还包括有一狭缝，用于限制光入射在晶圆的区域。
优选的，所述的晶圆是可移动的，并设置在传送带上。
优选的，所述的装置设置在快速热退火炉室中。
优选的，所述的磁铁为永磁铁。
优选的，所述的磁铁为超导永磁铁。
优选的，所述的反射罩包括有两层透明绝缘层和一层反射层，其中所述的反射层位于所述两层透明绝缘层的中间，
优选的，所述的透明绝缘层是TEOS，SiN或光刻胶。
优选的，所述反射层的材料是能够反射红外光、可见光或者紫外光的任一种材料。
优选的，所述的反射层的材料是金属。
优选的，所述的透明绝缘层为抗反射层。
优选的，所述的晶圆包括基片和MR薄膜层，所述基片的材料为硅且所述基片包括电子电路，所述MR薄膜层沉积在所述的基片上。
本发明另一方面还提供了一种用于自旋电子器件钉扎层的快速热处理的方法，包括如下步骤：
（1）在炉室的上方设置一快速热退火光源，用于加热晶圆的MR薄膜层；
（2）在晶圆上方设置有反射罩，包括至少一层透明绝缘层、以及一反射层，图形化反射罩，当在反射罩下方的部分区域在加热的同时，其他区域仍然保持冷却；
（3）在反射罩和光源之间设置一狭缝，用于限制光入射在晶圆的区域；移动晶圆，当晶圆移动到狭缝下方时，光源可以加热没有被反射罩遮挡的晶圆部分；
（4）在移动晶圆的下方设置磁铁，用于产生永恒磁场；
（5）通过控制曝光时间，让所述的晶圆上的加热区域加热到其反铁磁层阻隔温度之上，然后在应用的磁场中冷却下来，关闭磁场，反铁磁层被固定。
优选的，所述的反射罩包括有两层透明绝缘层和一反射层，其中所述的反射层位于所述两层透明绝缘层的之间。
优选的，所述的快速退火光源包括单个灯泡或者灯泡阵列。
优选的，所述的透明绝缘层可以是TEOS，SiN或光刻胶。
优选的，所述的透明绝缘层为抗反射层。
优选的，所述反射层材料是能够反射红外光、可见光或者紫外光中的任一种材料。
优选的，所述的反射层的材料是金属。
优选的，所述的晶圆包括基片和MR薄膜层，所述基片的材料为硅且所述基片包括电子电路，所述MR薄膜层沉积在所述的基片上。
与现有技术相比，本发明具有以下优点：采用快速热退火地方法和装置提高了激光退火的空间分辨率，还减少加工时间，能够快速生产晶圆，且性能优良，适合大批量生产。
附图说明
为了更清楚地说明本发明实施例技术中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1(a)、1(b)为自旋电子器件的激光直写***。
图2为磁性薄膜的激光加热辅助退火装置示意图。
图3为通过遮罩的磁性热退火示意图。
图4为钉扎层热磁重置过程图。
图5为反射罩晶圆的横截面示意图。
图6-7为通过遮罩加热示意图。
图8为永磁铁的设计示意图。
图9为总体薄膜***示意图。
具体实施方式
下面结合附图分别对本发明的较佳实施例进行详细阐述，以使本发明的优点和特征能更易于被本领域的技术人员理解，从而对本发明的保护范围作出更为清楚明确的界定。
实施例
图3为本发明的通过反射罩进行磁性热退火示意图，如图3所示，晶圆34涂有透明绝缘层33和反射层32，反射层被覆盖和蚀刻以露出将被加热区域，以恒定的速度在RTA（Rapid Thermal Anneal，快速热退火）狭缝灯31下移动晶圆34，当晶圆34经过狭缝35的时候，RTA狭缝灯31加热MR晶圆上薄膜没有被罩住的区域；当晶圆34经过狭缝边缘的地方，加热的区域逐渐冷却，然后应用在磁场中，图中的箭头方向为晶圆的移动方向，从右往左移动。
图4为钉扎层热磁重置过程图，如图4所示，41为铁磁磁矩，42为铁磁自由层，43为绝缘隧道结，44为参考铁磁层，45为铜交换耦合层，46为铁磁钉扎层，47为反铁磁层，从图4（a）到图4（d）中可以看出，在图4（b）应用饱和磁场，加热温度超过反铁磁层的阻隔温度TB后，应用到饱和磁场铁磁层的磁化方向一致，在图4（c）中，关闭光源，然后冷却存在的应用磁场，当应用磁场一旦冷却之后，钉扎层磁化方向一致时,由于反铁磁性物质冷却温度低于其阻隔温度, 铁磁层和反铁磁层之间的接口旋转被锁定。最后，关闭磁场，反铁磁层被固定，如图4（d）所示。
定义阻隔温度TB和奈耳温度TN，TN是反铁磁性和顺磁性之间的过渡阶段，上述的TN,反铁磁性的旋转没有针对磁场和温度锁定在合适的位置。TB是阻隔温度，阻隔温度在全部旋转可以与磁场对准。TB 总是小于 TN，TB是由反铁磁层的颗粒大小控制。大的颗粒的阻隔温度比小的颗粒的要高，对于有无限个颗粒，TB 与TN相等。在某些情况下，反铁磁层和磁铁钉扎层必须加热到温度大于反铁磁层的TB，然后冷却温度低于TB，同时施加一个磁场以固定钉扎层的磁矩的方向。
图5为反射罩与晶圆的横截面示意图，51为绝缘透明层，52为反射层，53也为绝缘透明层，54为MR薄膜（MAGNETO-RESITIVEHEAD磁阻磁头）层，55为基片，56为图形化开口的加热区域。
图6-7为通过反射罩加热示意图，从图6中可以看出，入射光照射过来，对MR薄膜层进行加热，其中大部分的入射光被反射回去，部分的入射光通过图形化的反射罩窗口穿过，被MR薄膜层表面接收，并转换为热量，如果照射的时间很短，很有可能只给在狭缝下面的晶圆结构的一部分加热。然而，由于加热的过程太依赖于曝光时间，这样就会导致不好的结果，加热时间常数和MR薄膜层的热环境决定了加热区域的空间分辨率。
图7则反映了一个较好的加热结构。以MTJ晶圆为例，MTJ的金属材料比绝缘体有更高的热导率，因此，即使MTJ两端与夹缝不完全对齐，也可以仅仅加热MTJ材料。狭缝只需要足够的精确，这样可以确保热量能够提供给MTJ的一部分，热传导可能足以加热整个MTJ。差的绝缘材料的热传导性可能会阻止反射罩覆盖的地方加热。因此，MTJ的热传导要远远大于绝缘材料的热传导。如果MTJ能被合适的图形化，并且MTJ之间设置得范围足够大，这样局部加热过程的可选择性将得到更好的改善。
为了提高空间分辨率，MR薄膜可以图形化，以使得在图形化反射罩的窗口下方存在一个不连续的MR薄膜结构，薄膜结构需要全部加热，使得加热区域的边界可以通过反射罩和MR结构的边缘来决定。
透明绝缘层可以是包含透明的电介质的抗反射涂层（用于最大化入射光的吸收半波的厚度），比如SiN或者聚合物，聚化物如光刻胶等。
反射材料可以是能够反射红外光、可见光或者紫外光中的任一材料，AL是最常用的选择。MR薄膜层可以是由GMR或者MTJ薄膜构成，薄膜可以在热处理之前或之后处理。基片可以是任何光滑的基片，在基片上MR薄膜可以沉积。它通常是Si，其也可以包含电子电路。
图8为永磁铁的设计示意图，有两个磁极36，永磁铁设置在两个磁极的中间，这样产生了磁场37。该设计是为了集中永磁铁的磁通量，使得磁通量很强，并且平行于硅晶圆的表面，磁极主要由金属合金构成，包括钴、铁、镍。永磁铁在缺口处有高能量密度，这样才有很强的磁场强度，稀土是一个不错的选择。
图9为总体薄膜***示意图，如图9所示，整个薄膜是通过磁场的脉冲灯加热的，RTA灯泡阵列91用于加热晶圆，灯泡可以采用脉冲设定加热时间，或者通过腔室92移动晶圆。恒温箱腔体可以具有真空或者氮气的受控环境，可能不仅被包含空气的所控制。磁铁可以是一个很大永久的磁铁阵列或者超导磁铁。通过全部的晶圆表面提供至少10000e大小的均匀场。晶圆上设有一个反射罩，用于选择那些将被加热的区域。晶圆夹94夹持住晶圆，如有必要，可以预热晶圆到一定的温度，该温度要低于反铁磁层的阻隔温度，在其他实现中，它也可能用于冷却，这样使得冷却时间更快。
以上对本发明的特定实施例结合图示进行了说明，很明显，在不离开本发明的范围和精神的基础上，可以对现有技术和方法进行很多修改。在本发明的所属技术领域中，只要掌握通常知识，就可以在本发明的技术要旨范围内，进行多种多样的变更。

Claims (21)

  1. 一种用于自旋电子器件钉扎层的快速热处理的装置，其特征在于：该装置包括快速热退火光源、反射罩、磁铁、晶圆，所述的反射罩包括至少一个透明绝缘层和一反射层，所述的磁铁用于产生恒定的磁场，所述透明绝缘层和所述反射层依次涂覆在所述晶圆上，所述光源用于通过图形化的所述反射罩发送入射光至所述晶圆的加热区域，通过控制所述的光源的曝光时间，让所述的晶圆上的加热区域加热到其反铁磁层的阻隔温度之上，然后在应用的磁场中冷却下来，关闭磁场。
  2. 根据权利要求1所述的装置，其特征在于：所述光源是单个灯泡或者灯泡阵列。
  3. 根据权利要求1所述的装置，其特征在于：所述装置还包括有一狭缝，用于限制光入射在晶圆的区域。
  4. 根据权利要求1所述的装置，其特征在于：所述的晶圆是可移动的，并设置在传送带上。
  5. 根据权利要求1所述的装置，其特征在于：所述的装置设置在快速热退火炉室中。
  6. 根据权利要求1所述的装置，其特征在于：所述的磁铁为永磁铁。
  7. 根据权利要求1所述的装置，其特征在于：所述的磁铁为超导永磁铁。
  8. 根据权利要求1所述的装置，其特征在于：所述的反射罩包括有两层透明绝缘层和一层反射层，其中所述的反射层位于所述两层透明绝缘层的中间
  9. 根据权利要求8所述的装置，其特征在于：所述的透明绝缘层是TEOS,SiN或光刻胶。
  10. 根据权利要求8所述的装置，其特征在于：所述反射层的材料是能够反射红外光、可见光或者紫外光的任一种材料。
  11. 根据权利要求8所述的装置，其特征在于：所述的反射层的材料是金属。
  12. 根据权利要求10所述的装置，其特征在于：所述的透明绝缘层为抗反射层。
  13. 根据权利要求1所述的装置，其特征在于：所述的晶圆包括基片和MR薄膜层，所述基片的材料为硅且所述基片包括电子电路，所述MR薄膜层沉积在所述的基片上。
  14. 一种用于自旋电子器件钉扎层的快速热处理的方法，其特征在于：包括如下步骤：
    (1)在炉室的上方设置一快速热退火光源，用于加热晶圆的MR薄膜层；
    (2)在晶圆上方设置有反射罩，包括至少一层透明绝缘层、以及一反射层，图形化反射罩，当在反射罩下方的部分区域在加热的同时，其他区域仍然保持冷却；
    (3)在反射罩和光源之间设置一狭缝，用于限制光入射在晶圆的区域；移动晶圆，当晶圆移动到狭缝下方时，光源可以加热没有被反射罩遮挡的晶圆部分；
    (4)在移动晶圆的下方设置磁铁，用于产生永恒磁场；
    (5)通过控制曝光时间，让所述的晶圆上的加热区域加热到其反铁磁层的阻隔温度之上，然后在应用的磁场中冷却下来，关闭磁场，反铁磁层被固定。
  15. 根据权利要求14所述的方法，其特征在于：所述的反射罩包括有两层透明绝缘层和一反射层，其中所述的反射层位于所述两层透明绝缘层的之间。
  16. 根据权利要求14所述的方法，其特征在于：所述的快速退火光源包括单个灯泡或者灯泡阵列。
  17. 根据权利要求14所述的方法，其特征在于：所述的透明绝缘层可以是TEOS，SiN或光刻胶。
  18. 根据权利要求14所述的方法，其特征在于：所述的透明绝缘层为抗反射层。
  19. 根据权利要求14所述的方法，其特征在于：所述反射层材料是能够反射红外光、可见光或者紫外光中的任一种材料。
  20. 根据权利要求14所述的方法，其特征在于：所述的反射层的材料是金属。
  21. 根据权利要求14所述的方法，其特征在于：所述的晶圆包括基片和MR薄膜层，所述基片的材料为硅且所述基片包括电子电路，所述MR薄膜层沉积在所述的基片上。
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