WO2016140012A1 - 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 - Google Patents
塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 Download PDFInfo
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- WO2016140012A1 WO2016140012A1 PCT/JP2016/053335 JP2016053335W WO2016140012A1 WO 2016140012 A1 WO2016140012 A1 WO 2016140012A1 JP 2016053335 W JP2016053335 W JP 2016053335W WO 2016140012 A1 WO2016140012 A1 WO 2016140012A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0406—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
- B05D3/0413—Heating with air
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/104—Pretreatment of other substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
- G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- the present invention relates to a coating processing method, a computer storage medium, and a coating processing apparatus for coating a coating liquid on a substrate.
- a predetermined coating solution is applied on a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate to form a coating film such as an antireflection film or a resist film.
- a predetermined resist pattern is formed on the wafer by sequentially performing processing, exposure processing for exposing the resist film to a predetermined pattern, development processing for developing the exposed resist film, and the like.
- a solvent is supplied to the center of the wafer prior to the supply of the resist solution, the wafer is rotated, and the solvent is diffused over the entire surface of the wafer.
- the rotational speed of the wafer is accelerated to a predetermined rotational speed, and a resist solution is supplied to the central portion of the wafer to diffuse the entire surface of the wafer.
- the film thickness may decrease at the outer peripheral portion of the wafer, or streaky coating spots may occur. It has been confirmed by the present inventors.
- the present invention has been made in view of such a point, and when applying the coating liquid on the substrate, the supply amount of the coating liquid is suppressed to a small amount and is uniform in the substrate plane regardless of the viscosity of the coating liquid.
- the purpose is to apply a coating solution.
- one embodiment of the present invention is a coating processing method for coating a coating liquid on a substrate, wherein a first liquid film is applied to a central portion of the substrate by a solvent, and the outer periphery of the substrate.
- a solvent liquid film forming step for forming the annular second liquid film having a thickness larger than that of the first liquid film with the solvent, respectively, and while rotating the substrate at the first rotation speed
- the film thickness decreases at the outer periphery of the substrate. It has been confirmed that problems such as these occur. This is presumed to be caused by pre-wetting with a solvent so that, for example, a resist solution as a coating solution diffuses faster than expected, and as a result, the resist solution shaken off from the outer periphery of the substrate increases. And this tendency becomes so remarkable that the viscosity of a resist liquid becomes low.
- the present inventors diligently studied this point, and by increasing the film thickness of the solvent liquid film at the outer peripheral portion of the substrate as compared with the central portion of the substrate, the film thickness decrease at the outer peripheral portion of the substrate, etc.
- the knowledge that the defect can be suppressed was obtained. This is because the solvent liquid film is thickened at the outer periphery of the substrate, so that the resist solution supplied to the central portion of the substrate functions as a kind of wall when diffusing into the outer periphery of the substrate and is swung from the outer periphery of the substrate. It is considered that the amount of resist solution to be reduced is reduced.
- an annular first film having a thickness greater than that of the first liquid film formed in the central portion of the substrate is formed on the outer peripheral portion of the substrate. Since the second liquid film is formed of a solvent, the second liquid film functions as a kind of wall when the coating liquid supplied to the central portion of the substrate diffuses to the outer peripheral portion of the substrate and is shaken off from the outer peripheral portion of the substrate. The amount of coating solution is reduced. As a result, even when the coating liquid has a low viscosity and the supply amount of the coating liquid is small, the coating liquid can be uniformly applied within the substrate surface. Therefore, according to the present invention, regardless of the viscosity of the coating solution, the supply amount of the coating solution can be suppressed to a small amount, and the coating solution can be applied uniformly within the substrate surface.
- Another aspect of the present invention is a coating processing method for applying a coating liquid onto a substrate, and after supplying a solvent to the central portion of the substrate, the substrate is rotated at a predetermined rotational speed.
- a readable computer storing a program that operates on a computer of a control unit that controls the coating processing apparatus so that the coating processing method is executed by the coating processing apparatus. It is a storage medium.
- another aspect of the present invention is a coating processing apparatus that applies a coating liquid onto a substrate, a substrate holding unit that holds and rotates the substrate, and a coating that supplies the coating liquid onto the substrate
- the substrate holding unit, the coating solution supply nozzle, the solvent supply nozzle, the first moving mechanism, and the second moving mechanism are controlled so that the coating solution is diffused on the substrate by rotating at a rotational speed of And a control unit configured as described above.
- the supply amount of the coating solution can be suppressed to a small amount regardless of the viscosity of the coating solution, and the coating solution can be applied uniformly within the substrate surface.
- FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system 1 including a coating processing apparatus for performing a coating processing method according to the present embodiment.
- 2 and 3 are a front view and a rear view, respectively, schematically showing the outline of the internal configuration of the substrate processing system 1.
- the coating liquid is a resist liquid
- the coating processing apparatus is a resist coating apparatus that applies a resist liquid to a substrate will be described as an example.
- the substrate processing system 1 includes a cassette station 10 in which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 11 having a plurality of various processing apparatuses for performing predetermined processing on the wafers W. And an interface station 13 that transfers the wafer W to and from the exposure apparatus 12 adjacent to the processing station 11 is integrally connected.
- the cassette station 10 is provided with a cassette mounting table 20.
- the cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassette C is mounted when the cassette C is carried into and out of the substrate processing system 1.
- the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction as shown in FIG.
- the wafer transfer device 23 is also movable in the vertical direction and the vertical axis direction ( ⁇ direction), and includes a cassette C on each cassette mounting plate 21 and a delivery device for a third block G3 of the processing station 11 described later.
- the wafer W can be transferred between the two.
- the processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices.
- the first block G1 is provided on the front side of the processing station 11 (X direction negative direction side in FIG. 1), and the second block is provided on the back side of the processing station 11 (X direction positive direction side in FIG. 1).
- Block G2 is provided.
- a third block G3 is provided on the cassette station 10 side (Y direction negative direction side in FIG. 1) of the processing station 11, and the interface station 13 side (Y direction positive direction side in FIG. 1) of the processing station 11 is provided. Is provided with a fourth block G4.
- a plurality of liquid processing apparatuses for example, a development processing apparatus 30 that develops the wafer W, an antireflection film (hereinafter referred to as “lower antireflection”) under the resist film of the wafer W.
- a lower antireflection film forming device 31 for forming a film a resist coating device 32 for applying a resist solution to the wafer W to form a resist film, and an antireflection film (hereinafter referred to as “upper reflection” on the resist film of the wafer W).
- An upper antireflection film forming device 33 for forming an “antireflection film” is arranged in this order from the bottom.
- the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 are arranged side by side in the horizontal direction.
- the number and arrangement of the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 can be arbitrarily selected.
- the lower antireflection film forming device 31 the resist coating device 32, and the upper antireflection film forming device 33, for example, spin coating for applying a predetermined coating solution onto the wafer W is performed.
- spin coating for example, a coating liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to diffuse the coating liquid to the surface of the wafer W.
- the configuration of the resist coating device 32 will be described later.
- a peripheral exposure device 42 for exposing the outer peripheral portion is provided side by side in the vertical direction and the horizontal direction. The number and arrangement of the heat treatment apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 can be arbitrarily selected.
- a plurality of delivery devices 50, 51, 52, 53, 54, 55, 56 are provided in order from the bottom.
- the fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.
- a wafer transfer area D is formed in an area surrounded by the first block G1 to the fourth block G4.
- a plurality of wafer transfer devices 70 having transfer arms that are movable in the Y direction, the X direction, the ⁇ direction, and the vertical direction are arranged.
- the wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.
- a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.
- the shuttle transport device 80 is linearly movable, for example, in the Y direction in FIG.
- the shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.
- a wafer transfer device 100 is provided next to the third block G3 on the positive side in the X direction.
- the wafer transfer apparatus 100 has a transfer arm that is movable in the X direction, the ⁇ direction, and the vertical direction, for example.
- the wafer transfer device 100 can move up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.
- the interface station 13 is provided with a wafer transfer device 110 and a delivery device 111.
- the wafer transfer device 110 has a transfer arm that is movable in the Y direction, the ⁇ direction, and the vertical direction, for example.
- the wafer transfer device 110 can transfer the wafer W between each transfer device, the transfer device 111, and the exposure device 12 in the fourth block G4, for example, by supporting the wafer W on a transfer arm.
- the resist coating apparatus 32 has a processing container 130 that can be sealed inside. On the side surface of the processing container 130, a loading / unloading port (not shown) for the wafer W is formed.
- a spin chuck 140 is provided as a substrate holding unit that holds and rotates the wafer W.
- the spin chuck 140 can be rotated at a predetermined speed by a chuck driving unit 141 such as a motor. Further, the chuck driving unit 141 is provided with an elevating drive mechanism such as a cylinder, and the spin chuck 140 can be moved up and down.
- a cup 142 that receives and collects the liquid scattered or dropped from the wafer W.
- a discharge pipe 143 that discharges the collected liquid and an exhaust pipe 144 that exhausts the atmosphere in the cup 142 are connected to the lower surface of the cup 142.
- a rail 150 extending along the Y direction is formed on the X direction negative direction (downward direction in FIG. 5) side of the cup 142.
- the rail 150 is formed, for example, from the outside of the cup 142 in the Y direction negative direction (left direction in FIG. 5) to the outside in the Y direction positive direction (right direction in FIG. 5).
- Three arms 151, 152, and 153 are attached to the rail 150.
- the first arm 151 supports a resist solution supply nozzle 154 as a coating solution supply nozzle that supplies a resist solution as a coating solution.
- the first arm 151 is movable on the rail 150 by a nozzle driving unit 155 as a first moving mechanism.
- the resist solution supply nozzle 154 passes from above the central portion of the wafer W in the cup 142 from the standby portion 156 installed on the Y direction positive direction side of the cup 142 to the negative direction of the cup 142 in the Y direction. It is possible to move to a standby unit 157 provided outside the side.
- the first arm 151 can be moved up and down by the nozzle driving unit 155, and the height of the resist solution supply nozzle 154 can be adjusted.
- the resist solution in this embodiment for example, an MUV resist, a KrF resist, an ArF resist or the like is used, and the viscosity is a relatively low viscosity of about 1 to 300 cP.
- a solvent supply nozzle 158 for supplying a solvent is supported on the second arm 152.
- the second arm 152 is movable on the rail 150 by a nozzle driving unit 159 as a second moving mechanism.
- the solvent supply nozzle 158 can move from the standby unit 160 provided outside the cup 142 on the Y direction positive direction side to above the center of the wafer W in the cup 142.
- the standby unit 160 is provided on the Y direction positive direction side of the standby unit 156.
- the second arm 152 can be moved up and down by the nozzle driving unit 159, and the height of the solvent supply nozzle 158 can be adjusted.
- the cyclohexanone etc. which are the solvent of a resist liquid are used, for example.
- the solvent is not necessarily a solvent contained in the resist solution, and any solvent can be selected as long as the resist solution can be appropriately diffused by prewetting.
- the third arm 153 supports a dry gas nozzle 161 that blows dry gas onto the wafer W.
- the third arm 153 is movable on the rail 150 by a nozzle driving unit 162 as a gas nozzle moving mechanism. Accordingly, the dry gas nozzle 161 can move from the standby unit 163 provided on the outer side of the cup 142 in the Y direction negative direction to above the wafer W in the cup 142.
- the standby unit 163 is provided on the Y direction negative direction side of the standby unit 157. Further, the third arm 153 can be moved up and down by the nozzle driving unit 162, and the height of the dry gas nozzle 161 can be adjusted.
- the dry gas for example, nitrogen gas, air dehumidified with a dehumidifier (not shown), or the like can be used.
- the configuration of the development processing device 30, the lower antireflection film forming device 31, and the upper antireflection film forming device 33 which are other liquid processing devices, except that the shape and number of nozzles and the liquid supplied from the nozzles are different, Since it is the same as the structure of the resist coating apparatus 32 mentioned above, description is abbreviate
- the control unit 200 is a computer, for example, and has a program storage unit (not shown).
- the program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1.
- the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize substrate processing described later in the substrate processing system 1.
- the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 200 from the storage medium.
- FIG. 6 is a flowchart showing an example of main steps of wafer processing according to the present embodiment.
- FIG. 7 is a time chart showing the rotation speed of the wafer W and the operation of each device in resist coating performed by the resist coating device 32.
- a cassette C storing a plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1, and each wafer W in the cassette C is sequentially transferred to the transfer device 53 of the processing station 11 by the wafer transfer device 23. .
- the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 and subjected to temperature adjustment processing. Thereafter, the wafer W is transferred to the lower antireflection film forming device 31 of the first block G1, for example, by the wafer transfer device 70, and a lower antireflection film is formed on the wafer W (step S1 in FIG. 6). Thereafter, the wafer W is transported to the heat treatment apparatus 40 of the second block G2, subjected to heat treatment, and the temperature is adjusted.
- the wafer W is transferred to the adhesion apparatus 41 and subjected to an adhesion process. Thereafter, the wafer W is transferred to the resist coating device 32 of the first block G1, and a resist film is formed on the wafer W (step S2 in FIG. 6).
- the resist coating process in the resist coating apparatus 32 will be described in detail.
- the wafer W is first sucked and held on the upper surface of the spin chuck 140.
- the solvent supply nozzle 158 is moved above the center of the wafer W, and the solvent Q is supplied onto the wafer W as shown in FIG. 8 (time t 0 in FIG. 7).
- the wafer W is rotated at a predetermined rotational speed to form a liquid film of the solvent Q on the entire surface of the wafer W.
- the rotational speed of the wafer W is accelerated to 2000 rpm at an acceleration of 10,000 rpm / second to diffuse the solvent Q over the entire surface of the wafer W.
- a liquid film (first liquid film) having a film thickness of approximately greater than 0 mm and less than 2 mm, and approximately 4 ⁇ 10 ⁇ 5 mm is formed on the entire surface of the wafer W.
- the film thickness of the first liquid film is adjusted by changing the time for maintaining at 2000 rpm, for example, and is maintained at 2000 rpm for 2 seconds in this embodiment, for example.
- a dry gas is blown onto the central portion of the wafer W by a dry gas nozzle 161 as necessary.
- the film thickness of the first liquid film M1, particularly the central part, may be adjusted.
- the solvent supply nozzle 158 is moved above the outer peripheral portion of the wafer W, for example, a rotational speed exceeding 0 rpm and not higher than a first rotational speed described later,
- the solvent Q is supplied onto the first liquid film M1 from the solvent supply nozzle 158 while rotating at 60 rpm which is the same as the rotation speed (time t 2 in FIG. 7).
- the first liquid film M1 due to the solvent Q is formed in the central portion of the wafer W, and the annular first film having a thickness larger than that of the first liquid film M1 is formed on the outer peripheral portion of the wafer W.
- Two liquid films M2 are formed (solvent liquid film forming step, step T1 in FIG. 6).
- the outer peripheral portion of the wafer W means a position that is approximately 30 mm to 100 mm away from the center of the wafer W in the radial direction when the diameter of the wafer W is 300 mm, for example.
- the resist solution supply nozzle 154 is moved above the center of the wafer W, and the resist solution R is supplied onto the wafer W from the resist solution supply nozzle 154 (application liquid supply process. Step T2 in FIG. 6 and time t 3 in FIG. 7).
- the rotation speed of the wafer W is the first rotation speed, and in this embodiment, is 60 rpm as described above.
- the supply of the resist solution R from the resist solution supply nozzle 154 is continued, and when the supply amount of the resist solution R reaches, for example, 0.1 mL, the rotation speed of the wafer W is changed from the first rotation speed to the second rotation speed.
- Accelerate to the rotational speed (time t 4 in FIG. 7).
- the second rotation speed is preferably 1500 rpm to 4000 rpm, and for example, 2500 rpm in the present embodiment. Further, the acceleration of the wafer W at this time is about 10,000 rpm / second.
- the rotation speed of the wafer W that has reached the second rotation speed is maintained at the second rotation speed for a predetermined time, for example, about 1 second in this embodiment (time t 5 to t 6 in FIG. 7).
- the resist solution R supplied onto the wafer W diffuses quickly toward the outer peripheral portion of the wafer W.
- the second liquid film M2 functions as a kind of wall with respect to the resist liquid R, and the diffusion of the resist liquid R can be suppressed.
- the resist solution R shaken off from the outer peripheral portion of the wafer W is minimized, and the resist film thickness is reduced and the streaky coating spots are prevented from occurring on the outer peripheral portion of the wafer W. it can.
- the resist solution R can be uniformly diffused in the plane of the wafer W, and a uniform resist film can be formed.
- the supply of the solvent Q to the outer periphery of the wafer W is stopped before supplying the resist solution R to the center of the wafer W.
- the resist solution R may be stopped before it comes into contact with the second liquid film M2, and the supply stop timing can be arbitrarily set. If the supply of the solvent Q from the solvent supply nozzle 158 to the outer periphery of the wafer W is continued when the resist solution R diffuses, the resist solution R and the solvent Q that diffuse toward the outer periphery of the wafer W are mixed. As a result, the resist solution R is diluted. Then, most of the diluted resist solution R is wasted from the outer peripheral portion of the wafer W without being fixed on the wafer W, and is wasted. Therefore, it is preferable to stop the supply of the solvent Q before the resist solution R comes into contact with the second liquid film M2.
- the supply of the resist solution R from the resist solution supply nozzle 154 is stopped and the supply of the resist solution R is stopped.
- the rotational speed of the wafer W is decelerated to a third rotational speed that is slower than the second rotational speed and faster than the first rotational speed.
- the third rotation speed is preferably approximately 100 rpm to 800 rpm, and in this embodiment, for example, 100 rpm.
- the simultaneous stop of the supply of the resist solution R means that when the supply of the resist solution R is stopped (time t 6 in FIG. 7), the rotation speed of the wafer W has already started decelerating, and the third rotation speed. Including before and after the point at which is reached.
- the acceleration when decelerating from the second rotation speed to the third rotation speed is 30000 rpm.
- the wafer W is rotated at a third rotation speed for a predetermined time, for example, about 0.2 seconds, and then the wafer W is faster than the third rotation speed and slower than the second rotation speed to a fourth rotation speed.
- the wafer W is accelerated (time t 7 in FIG. 7 ).
- the fourth rotation speed is preferably about 1000 rpm to 2000 rpm, and in this embodiment, for example, 1700 rpm.
- the resist film is dried by rotating at a fourth rotation speed for a predetermined time, for example, about 20 seconds (step T4 in FIG. 6).
- a solvent is discharged as a rinsing liquid from a rinse nozzle (not shown) to the back surface of the wafer W, and the back surface of the wafer W is cleaned (step T5 in FIG. 6). Thereby, a series of coating processes in the resist coating apparatus 32 is completed.
- the wafer W is then transferred to the upper antireflection film forming apparatus 33 of the first block G1, and an upper antireflection film is formed on the wafer W (FIG. 7). Step S3). Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, and heat treatment is performed. Thereafter, the wafer W is transferred to the peripheral exposure device 42 and subjected to peripheral exposure processing (step S4 in FIG. 7).
- the wafer W is transferred to the transfer device 52 by the wafer transfer device 100 and transferred to the transfer device 62 of the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure apparatus 12 by the wafer transfer apparatus 110 of the interface station 13 and subjected to exposure processing with a predetermined pattern (step S5 in FIG. 7).
- the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 and subjected to post-exposure baking.
- the resist is deprotected by the acid generated in the exposed portion of the resist film.
- the wafer W is transferred to the development processing apparatus 30 by the wafer transfer apparatus 70, and development processing is performed (step S6 in FIG. 7).
- the wafer W is transferred to the heat treatment apparatus 40 and subjected to a post-bake process (Step S7 in FIG. 7). Next, the temperature of the wafer W is adjusted by the heat treatment apparatus 40. Thereafter, the wafer W is transferred to the cassette C of the predetermined cassette mounting plate 21 via the wafer transfer device 70 and the wafer transfer device 23, and a series of photolithography steps is completed.
- the annular second liquid film M2 having a film thickness larger than that of the first liquid film M1 formed in the center part of the wafer W is formed on the outer peripheral part of the wafer W by the solvent Q. Then, when the resist solution R supplied to the central portion of the wafer W is diffused on the wafer W, the second liquid film M2 functions as a kind of wall with respect to the resist solution R, and the resist solution R Can be suppressed. Therefore, even when the viscosity of the resist solution R is as low as several cP, the resist solution R that is shaken off from the outer peripheral portion of the wafer W is minimized, and the film thickness of the resist film is reduced at the outer peripheral portion of the wafer W. Moreover, generation
- the rotational speed of the wafer W is accelerated to, for example, about 2000 rpm.
- the method for forming the first liquid film M1 is the present embodiment.
- the method can be arbitrarily selected as long as a liquid film of the solvent Q having a desired thickness can be formed at the center of the wafer W.
- the rotational speed of the wafer W is maintained at the rotational speed when the solvent Q is supplied to the central portion of the wafer W, approximately 30 rpm in this embodiment.
- the film thickness of the first liquid film M1 may be adjusted by adjusting the time for rotating W. Further, as described above, the thickness of the first liquid film M ⁇ b> 1 may be adjusted by spraying the dry gas to the central portion of the wafer W by the dry gas nozzle 161.
- the shape of the dry gas nozzle 161 for supplying the dry gas is not limited to the content of the present embodiment, and the central portion of the wafer W by the solvent Q is used. If the liquid film can be formed with a desired film thickness, the method can be arbitrarily selected. For example, as shown in FIG. 13, a long dry gas nozzle 170 extending along the diameter direction of the wafer W is provided in the resist coating apparatus 32, and the wafer W is rotated toward the wafer W while being rotated. By supplying the gas, the thickness of the first liquid film M1 in particular at the center may be adjusted.
- the length of the dry gas nozzle 170 in the longitudinal direction may be set to a length of about 60 to 200 mm. Further, the length of the dry gas nozzle 170 is about 30 to 100 mm, which is about half, and the dry gas nozzle 170 is placed at a position that covers the center of the wafer W and is eccentric from the center of the wafer W as shown in FIG. The dry gas may be supplied to the central portion of the wafer W after being disposed.
- the diameter of the dry gas nozzle 161 is set to, for example, about 60 to 200 mm so as to cover the upper part of the center of the wafer W, and the dry gas is supplied to the center of the wafer W by the large-diameter dry gas nozzle 161. You may do it.
- a central portion of the wafer W is formed by a substantially disc-shaped dry gas nozzle 171 having a diameter of about 60 to 200 mm and having a plurality of gas supply holes (not shown) formed on the lower surface. It can also be proposed to supply a dry gas.
- a heater 180 is provided above the spin chuck 140, and the downward flow formed in the processing vessel 130 by the exhaust pipe 144 provided in the cup 142 is heated to, for example, the volatilization temperature of the solvent Q or higher. Also good. By heating the downward flow, the solvent Q on the wafer W is volatilized by the downward flow, and the film thickness of the first liquid film M1 can be adjusted. Further, the drying gas supplied from the drying gas nozzles 161, 170, 171 may also be heated to a temperature higher than the volatilization temperature of the solvent Q.
- the first liquid film M1 is first formed on the entire surface of the wafer W, and then the solvent Q is supplied to the outer peripheral portion of the wafer W to form the second liquid film M2.
- the second liquid film M2 having a thickness larger than that of the first liquid film M1 can be formed on the outer peripheral portion of W
- the formation order of the first liquid film M1 and the second liquid film M2 can be arbitrarily selected. For example, as shown in FIG. 17, in a state where the wafer W is rotated, the solvent Q is first supplied to the outer peripheral portion of the wafer W to form the annular second liquid film M2, and then, as shown in FIG.
- the first liquid film M ⁇ b> 1 may be formed in the central portion of the wafer W by supplying a small amount of the solvent Q to the central portion of the wafer W from the solvent supply nozzle 158. Further, a plurality of solvent supply nozzles 158 are provided in the resist coating device 32, and as shown in FIG. 19, the solvent Q is simultaneously supplied to the central portion and the outer peripheral portion of the wafer W, so that the first liquid film M1 and the second liquid film are supplied.
- the film M2 may be formed.
- the first liquid film M1 and the second liquid film M2 are not in contact with each other.
- the first liquid film M1 is drawn.
- the second liquid film M2 are not necessarily in contact with each other.
- the resist liquid R supplied onto the first liquid film M1 is It has been confirmed that the second liquid film M2 functions as a wall when diffusing toward the outer peripheral portion of the wafer W, and a uniform in-plane resist film can be formed.
- the liquid solvent Q is supplied from the solvent supply nozzle 158.
- the solvent Q is not necessarily supplied as a liquid, and for example, the vapor or mist of the solvent Q may be supplied.
- a solvent supply nozzle 190 having the same configuration as the dry gas nozzle 171 having a substantially disk shape described above is disposed above the center of the wafer W, and the solvent Q vapor or mist is emitted from the solvent supply nozzle 190.
- the first liquid film M1 may be formed at the center of the wafer W.
- the solvent supply nozzle 190 is moved by another moving mechanism (not shown).
- the temperature of the vapor of the solvent Q decreases and condenses on the surface of the wafer W, and the first liquid film M1 having a desired film thickness can be formed in the central portion of the wafer W.
- the solvent Q is supplied to the outer peripheral part of the wafer W from the solvent supply nozzle 158, and the 2nd liquid film M2 is formed.
- the second liquid film M2 may be formed first, and then the first liquid film M1 may be formed.
- a substantially disk-shaped template 191 having a flat lower surface is arranged above the center of the wafer W, and is formed on the lower surface of the template 191.
- the solvent Q is applied with a film thickness thinner than that of the second liquid film M2
- it may be brought into contact with the upper surface of the wafer W as shown in FIG.
- the first liquid film can be formed at the center of the wafer W as shown in FIG.
- the template 191 is configured to be movable by a template moving mechanism (not shown). After the first liquid film M1 is formed by the template 191, the solvent Q is supplied from the solvent supply nozzle 158 to the outer peripheral portion of the wafer W to form the second liquid film M2.
- FIG. 21, FIG. 22, and FIG. 23 depict a state in which the template 191 having a smaller diameter than the wafer W is used, the diameter of the template 191 or the diameter of the solvent Q applied to the template 191 is Any diameter can be set as long as it is larger than the diameter of the first liquid film M1 formed above.
- the film thickness of the second liquid film M2 formed on the outer peripheral portion of the wafer W is made larger than the film thickness of the second liquid film formed on the central portion of the wafer W.
- the diffusion of the resist solution R was suppressed. From the viewpoint of suppressing the resist solution R, for example, as shown in FIGS. 24 and 25, a plurality of concentric circular shapes having substantially the same film thickness on the wafer W, for example.
- Another liquid film M3 may be formed.
- the present inventors for example, by forming a region where no other liquid film M3 is formed, in other words, a region not pre-wet treated with the solvent Q, for example, concentrically, the resist solution R It has been confirmed that excessive diffusion is suppressed and the same effect as that obtained when the first liquid film M1 and the second liquid film M2 are formed can be obtained.
- the other liquid film M3 includes a dry gas nozzle 193 having a plurality of discharge ports 192 disposed above the wafer W in a state where a liquid film having a predetermined film thickness is formed.
- this can be realized by supplying a dry gas from each discharge port 192 while the wafer W is rotated.
- the dry gas nozzle 193 may be rotated around the center of the wafer W while the wafer W is stopped.
- the solvent Q is supplied to the outer peripheral portion of the wafer W while rotating the wafer W at a predetermined rotational speed.
- the method of forming the Q liquid film in an annular shape is not limited to the contents of the present embodiment.
- the solvent supply nozzle 158 can be rotated by a support arm 211 as a support portion that can rotate the solvent supply nozzle 158 about a vertical axis passing through the central axis of the wafer W by a rotation drive mechanism 210.
- the solvent supply nozzle 158 may be moved along the outer peripheral portion of the wafer W while the wafer W is supported and stationary.
- the shape of the second liquid film M2 can be maintained in a good annular shape. .
- the diffusion of the resist solution R on the outer peripheral portion of the wafer W can be made more uniform.
- the method of forming the annular liquid film of the solvent Q in a state where the wafer W is stopped particularly increases the diameter of the wafer W, such as a 450 mm wafer, and the peripheral speed of the outer periphery of the wafer W increases. It is effective when it gets faster.
- FIG. 26 a state in which two solvent supply nozzles 158 are installed on the support arm 211 is depicted.
- a liquid film of the solvent Q is formed in an annular shape.
- the rotation angle of the support arm 211 can be reduced, and the throughput of the wafer processing can be improved. That is, when two solvent supply nozzles 158 are installed facing each other, the solvent Q can be supplied to the entire circumference of the wafer W by rotating the support arm 211 by 180 degrees, and n (n is an integer of 3 or more).
- n is an integer of 3 or more.
- the wafer W may be rotated in the direction opposite to the rotation direction of the support arm 211.
- the relative rotation speed of the solvent supply nozzle 158 with respect to the wafer W increases, so that the second liquid film M2 can be formed more quickly.
- an ArF resist having a viscosity of 1.0 cP was used as the resist solution R, and cyclohexanone was used as the solvent Q, and a test was performed in which the resist solution was applied onto the wafer W by the coating method according to the present embodiment.
- the supply amount of the resist solution R is changed in increments of 0.05 mL between 0.20 mL and 0.30 mL, and time t 1 to t 2 in FIG. 7 is formed in order to form the first liquid film M1.
- the time during which the wafer W was rotated at a rotational speed of 2000 rpm was changed to 2 seconds, 5 seconds, and 8 seconds to change the film thickness of the first liquid film M1.
- the same test was performed in the case where the entire surface of the wafer W was uniformly pre-wetted with the solvent Q as in the prior art, and then the resist solution R was supplied to the center of the wafer W.
- the same resist solution R and solvent Q were used.
- the time for rotating the wafer W at the rotation speed of 2000 rpm using the coating treatment method according to the present embodiment is 2 seconds and 5 seconds
- the supply amount of the resist solution R is 0.20 mL to 0.
- film thickness uniformity within the surface of the wafer W was ensured, and coating spots on the outer peripheral portion of the wafer W as observed in the comparative example were not confirmed.
- the rotation time was 5 seconds, it was confirmed that the film thickness uniformity in the wafer W surface was improved as compared with the case where the rotation time was 2 seconds.
- the film thickness uniformity of the resist film in the wafer W surface becomes a desired value.
- the application spots considered to be caused by the short supply amount of the liquid R were confirmed. This is probably because the rotation time of the wafer W is long and most of the solvent Q is shaken off from the outer peripheral portion of the wafer W, and as a result, the first liquid film M1 is not properly formed. That is, it is considered that the coating treatment method according to the present embodiment has not been achieved. Therefore, from this result, it was confirmed that an in-plane uniform coating film can be formed on the wafer W by the coating processing method according to the present embodiment.
- the first liquid film M1 only needs to be formed so that the surface of the wafer W is not dried, and the lower limit value of the film thickness of the first liquid film M1 is already known. As described above, it may be greater than 0 mm. In addition, as described above, the upper limit value of the film thickness of the first liquid film M1 is preferably less than 2 mm from the viewpoint of suppressing excessive diffusion of the resist liquid R in the central portion of the wafer W.
- the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the idea described in the claims, and these are naturally within the technical scope of the present invention. It is understood.
- the present invention is not limited to this example and can take various forms.
- the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
- FPD flat panel display
- the present invention is useful when applying a coating solution on a substrate.
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Abstract
Description
本願は、2015年3月3日に日本国に出願された特願2015-041679号に基づき、優先権を主張し、その内容をここに援用する。
前記塗布液供給ノズルを移動させる第1の移動機構と、前記溶剤供給ノズルを移動させる第2の移動機構とを有している。そして前記基板の中央部に、前記溶剤によって第1の液膜を、前記基板の外周部に、前記溶剤によって前記第1の液膜よりも膜厚の厚い環状の第2の液膜を、それぞれ形成し、前記基板を第1の回転速度で回転させながら、前記塗布液を基板の中心部に供給し、前記塗布液を供給しながら、前記基板を前記第1の回転速度よりも速い第2の回転速度で回転させて前記塗布液を基板上に拡散させるべく、前記基板保持部、前記塗布液供給ノズル、前記溶剤供給ノズル、前記第1の移動機構及び前記第2の移動機構を制御するように構成された制御部と、を有している。
30 現像処理装置
31 下部反射防止膜形成装置
32 レジスト塗布装置
33 上部反射防止膜形成装置
40 熱処理装置
41 アドヒージョン装置
42 周辺露光装置
140 スピンチャック
154 レジスト液供給ノズル
158 溶剤供給ノズル
161 乾燥ガスノズル
200 制御部
Q 溶剤
M1 第1の液膜
M2 第1の液膜
R レジスト膜
W ウェハ
Claims (14)
- 基板上に塗布液を塗布する塗布処理方法であって、
前記基板の中央部に、溶剤により第1の液膜を、前記基板の外周部に、前記溶剤により前記第1の液膜よりも膜厚の厚い環状の第2の液膜を、それぞれ形成する溶剤液膜形成工程と、
前記基板を第1の回転速度で回転させながら、前記塗布液を基板の中心部に供給する塗布液供給工程と、
前記塗布液を供給しながら、前記基板を前記第1の回転速度よりも速い第2の回転速度で回転させ、前記塗布液を基板上に拡散させる塗布液拡散工程と、を有する。 - 請求項1に記載の塗布処理方法において、
前記溶剤液膜形成工程では、
前記基板の中央部に前記溶剤を供給した後に、前記基板を所定の回転速度で回転させて当該溶剤を振り切ることで前記第1の液膜を形成し、
次いで、前記基板を回転させた状態で、前記基板の外周部に位置させた溶剤供給ノズルから前記溶剤を供給することで前記第2の液膜を形成する。 - 請求項2に記載の塗布処理方法において、
前記第1の液膜の形成において、前記基板を前記所定の回転速度で回転させて前記溶剤を振り切りながら、前記基板の中央部に乾燥ガスを吹き付ける。 - 請求項3に記載の塗布処理方法において、
前記乾燥ガスは、前記溶剤の揮発温度以上に加熱されている。 - 請求項1に記載の塗布処理方法において、
前記溶剤液膜形成工程では、
前記基板の中央部に前記溶剤の蒸気またはミストの少なくともいずれかを供給して前記第1の液膜を形成し、
前記基板を回転させた状態で、前記基板の外周部に位置させた溶剤供給ノズルから前記溶剤を供給することで前記第2の液膜を形成する。 - 請求項1に記載の塗布処理方法において、
前記溶剤液膜形成工程では、
その表面に、前記第2の液膜よりも薄い膜厚で前記溶剤が塗布されたテンプレートを、前記基板の中央部の表面に接触させることで前記第1の液膜を形成し、
前記基板を回転させた状態で、前記基板の外周部に位置させた溶剤供給ノズルから前記溶剤を供給することで前記第2の液膜を形成する。 - 請求項2に記載の塗布処理方法において、
前記溶剤液膜形成工程では、基板の中心から半径方向に30mm~100mm離れた位置で、前記溶剤供給ノズルから前記溶剤を供給する。 - 基板上に塗布液を塗布する塗布処理方法であって、
前記基板の中央部に溶剤を供給した後に、前記基板を所定の回転速度で回転させて当該溶剤を振り切ることで前記溶剤の液膜を形成し、
次いで、前記基板を回転させた状態で前記基板の中央部からずれた位置に乾燥ガスを吹き付け、当該基板の中央部からずれた位置の前記溶剤を除去することで、前記基板の中央部に溶剤の液膜を、前記基板の外周部に環状の他の液膜をそれぞれ形成する溶剤液膜形成工程と、
基板を第1の回転速度で回転させながら、前記塗布液を基板の中心部に供給する塗布液供給工程と、
前記塗布液を供給しながら、前記基板を前記第1の回転速度よりも速い第2の回転速度で回転させ、前記塗布液を基板上に拡散させる塗布液拡散工程と、を有する。 - 請求項1に記載の塗布処理方法において、
前記第1の液膜の膜厚は0mm超で2mm未満である。 - 基板上に塗布液を塗布する塗布処理方法を、塗布処理装置によって実行させるように、当該塗布処理装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
前記塗布処理方法は、
前記基板の中央部に、溶剤により第1の液膜を、前記基板の外周部に、前記溶剤により前記第1の液膜よりも膜厚の厚い環状の第2の液膜を、それぞれ形成する溶剤液膜形成工程と、
前記基板を第1の回転速度で回転させながら、前記塗布液を基板の中心部に供給する塗布液供給工程と、
前記塗布液を供給しながら、前記基板を前記第1の回転速度よりも速い第2の回転速度で回転させ、前記塗布液を基板上に拡散させる塗布液拡散工程と、を有する。 - 基板上に塗布液を塗布する塗布処理装置であって、
基板を保持して回転させる基板保持部と、
基板上に前記塗布液を供給する塗布液供給ノズルと、
基板上に溶剤を供給する溶剤供給ノズルと、
前記塗布液供給ノズルを移動させる第1の移動機構と、
前記溶剤供給ノズルを移動させる第2の移動機構と、
前記基板の中央部に、前記溶剤により第1の液膜を、前記基板の外周部に、前記溶剤により前記第1の液膜よりも膜厚の厚い環状の第2の液膜を、それぞれ形成し、
前記基板を第1の回転速度で回転させながら、前記塗布液を基板の中心部に供給し、
前記塗布液を供給しながら、前記基板を前記第1の回転速度よりも速い第2の回転速度で回転させて前記塗布液を基板上に拡散させるべく、前記基板保持部、前記塗布液供給ノズル、前記溶剤供給ノズル、前記第1の移動機構及び前記第2の移動機構を制御するように構成された制御部と、を有する。 - 請求項11に記載の塗布処理装置において、
前記基板上に乾燥ガスを吹き付ける乾燥ガスノズルと、
前記乾燥ガスノズルを移動させる第3の移動機構と、を有する。 - 請求項11に記載の塗布処理装置において、
前記溶剤の蒸気またはミストを供給する他の溶剤供給ノズルと、
前記他の溶剤供給ノズルを移動させる他の移動機構と、を有する。 - 請求項11に記載の塗布処理装置において、
その表面に、前記第2の液膜よりも薄い膜厚で前記溶剤を塗布し、その状態で前記基板の中央部の表面に接触させることで当該基板の中央部に前記第1の液膜を形成するテンプレートと、
前記テンプレートを移動させるテンプレート移動機構と、を有する。
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US15/549,435 US20180021804A1 (en) | 2015-03-03 | 2016-02-04 | Coating treatment method, computer storage medium, and coating treatment apparatus |
CN201680013005.5A CN107427860A (zh) | 2015-03-03 | 2016-02-04 | 涂敷处理方法、计算机可读存储介质和涂敷处理装置 |
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US (1) | US20180021804A1 (ja) |
JP (1) | JP6212066B2 (ja) |
KR (1) | KR102504541B1 (ja) |
CN (1) | CN107427860A (ja) |
TW (1) | TWI623816B (ja) |
WO (1) | WO2016140012A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20170178892A1 (en) * | 2015-12-16 | 2017-06-22 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
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JP6475123B2 (ja) * | 2015-09-01 | 2019-02-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
WO2018116745A1 (ja) * | 2016-12-22 | 2018-06-28 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
JP6921605B2 (ja) | 2017-04-24 | 2021-08-18 | 株式会社Screenホールディングス | 塗布方法 |
JP6765009B2 (ja) * | 2017-05-12 | 2020-10-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
CN108063100B (zh) * | 2017-12-08 | 2021-04-27 | 绍兴奥美电子科技有限公司 | 光刻胶去除工艺的测试方法 |
JP7189733B2 (ja) * | 2018-11-07 | 2022-12-14 | 株式会社Screenホールディングス | 処理カップユニットおよび基板処理装置 |
JP7202968B2 (ja) | 2019-05-09 | 2023-01-12 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
US11163235B2 (en) * | 2019-08-22 | 2021-11-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus for forming a photoresist layer, method for forming a masking layer, and method for forming a photoresist layer |
KR102316239B1 (ko) * | 2019-10-17 | 2021-10-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
CN111580352B (zh) * | 2020-06-08 | 2021-06-29 | 吉林大学 | 一种用于数字光刻***中旋转转台转心的测量和校正方法 |
CN113471108B (zh) * | 2021-07-06 | 2022-10-21 | 华海清科股份有限公司 | 一种基于马兰戈尼效应的晶圆竖直旋转处理装置 |
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JP4805769B2 (ja) | 2006-09-14 | 2011-11-02 | 東京エレクトロン株式会社 | 塗布処理方法 |
JP5065071B2 (ja) * | 2007-03-15 | 2012-10-31 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及びコンピュータ読み取り可能な記憶媒体 |
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JP5954266B2 (ja) * | 2013-06-27 | 2016-07-20 | 東京エレクトロン株式会社 | 塗布膜形成装置 |
JP5886935B1 (ja) * | 2014-12-11 | 2016-03-16 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
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- 2015-03-03 JP JP2015041679A patent/JP6212066B2/ja active Active
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2016
- 2016-02-04 US US15/549,435 patent/US20180021804A1/en not_active Abandoned
- 2016-02-04 CN CN201680013005.5A patent/CN107427860A/zh active Pending
- 2016-02-04 KR KR1020177024364A patent/KR102504541B1/ko active IP Right Grant
- 2016-02-04 WO PCT/JP2016/053335 patent/WO2016140012A1/ja active Application Filing
- 2016-03-01 TW TW105106056A patent/TWI623816B/zh active
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JP2001307991A (ja) * | 2000-04-25 | 2001-11-02 | Tokyo Electron Ltd | 膜形成方法 |
JP2008307488A (ja) * | 2007-06-15 | 2008-12-25 | Tokyo Electron Ltd | 塗布処理方法、塗布処理装置、プログラム及びコンピュータ記憶媒体 |
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TW201701082A (zh) | 2017-01-01 |
KR20170126459A (ko) | 2017-11-17 |
JP2016159253A (ja) | 2016-09-05 |
TWI623816B (zh) | 2018-05-11 |
CN107427860A (zh) | 2017-12-01 |
US20180021804A1 (en) | 2018-01-25 |
JP6212066B2 (ja) | 2017-10-11 |
KR102504541B1 (ko) | 2023-02-28 |
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