WO2016125626A1 - 基板処理装置および反応管 - Google Patents
基板処理装置および反応管 Download PDFInfo
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- WO2016125626A1 WO2016125626A1 PCT/JP2016/052124 JP2016052124W WO2016125626A1 WO 2016125626 A1 WO2016125626 A1 WO 2016125626A1 JP 2016052124 W JP2016052124 W JP 2016052124W WO 2016125626 A1 WO2016125626 A1 WO 2016125626A1
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- Prior art keywords
- reaction tube
- substrate processing
- inert gas
- gas
- processing apparatus
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims description 88
- 239000011261 inert gas Substances 0.000 claims description 64
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 14
- 238000003860 storage Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- -1 (HF) may be supplied Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
Definitions
- the present invention relates to a substrate processing apparatus and a reaction tube.
- a film forming process for depositing a predetermined thin film on a substrate using a CVD (Chemical Vapor Deposition) method or the like.
- the vertical substrate processing apparatus When performing the film forming process, for example, a vertical substrate processing apparatus is used.
- the vertical substrate processing apparatus has, for example, a process tube composed of an inner tube and an outer tube, and a plurality of wafers held by a boat are loaded into a cylindrical hollow portion of the inner tube, and a lower end of the inner tube Between the lower end of an outer tube, it has the structure airtightly sealed by the metal furnace port flange formed in the circular ring shape (patent document 1).
- An object of the present invention is to provide a technique capable of suppressing adhesion of by-products around the furnace opening.
- a reaction tube having a substrate processing region for processing the substrate therein; A furnace port portion disposed at a lower portion of the reaction tube, The reaction tube is A projecting portion projecting to the outer peripheral side below the reaction tube; Extending downward from the lower end of the reaction tube, formed to be thicker than the thickness of the reaction tube at a position corresponding to the substrate processing region, and extending a portion covering the inner peripheral surface of the furnace port portion; A technique is provided.
- adhesion of by-products around the furnace opening can be suppressed.
- the processing furnace 202 has a heater 207 as a heating means (heating mechanism).
- the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base as a holding plate.
- a reaction tube 203 is disposed inside the heater 207 concentrically with the heater 207.
- the reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened.
- a processing chamber 201 is formed in a hollow cylindrical portion of the reaction tube 203, and is configured so that wafers 200 as substrates can be accommodated in a horizontal posture and aligned in multiple stages in a vertical direction by a boat 217 as a substrate holder. ing.
- an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided below the reaction tube 203.
- a vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector and an APC (Auto Pressure Controller) valve 243 as a pressure regulator.
- the processing chamber 201 is configured to be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum).
- the APC valve 243 is configured to be able to open and close the valve to stop evacuation / evacuation in the processing chamber 201 and further adjust the valve opening to adjust the pressure in the processing chamber 201. Open / close valve.
- a first nozzle 233a as a first gas introduction part, a second nozzle 233b as a second gas introduction part, and a third nozzle 233c as a third gas introduction part are reacted. It is connected so as to penetrate the tube 203.
- Each of the first nozzle 233a, the second nozzle 233b, and the third nozzle 233c has an L shape having a horizontal portion and a vertical portion, the horizontal portion is connected to the side wall of the reaction tube 203, and the vertical portion is the reaction tube 203. It is provided in an arc-shaped space between the inner wall and the wafer 200 so as to rise in the stacking direction of the wafer 200 along the inner wall above the lower part of the reaction tube 203.
- a first gas supply hole 248a, a second gas supply hole 248b, and a third gas supply hole that are supply holes for supplying a processing gas. 248c is provided.
- a gas supply unit 232a that supplies a first process gas is connected to the first nozzle 233a, and a gas supply unit 232b that supplies a second process gas is connected to the second nozzle 233b.
- the A gas supply unit 232c that supplies a third processing gas is connected to the third nozzle 233c.
- a furnace port portion (also referred to as an inlet or a manifold) 209 formed concentrically with the reaction tube 203 is disposed.
- the furnace port portion 209 is made of, for example, a metal such as stainless steel (SUS material) or nickel (Ni) alloy, and has a cylindrical shape with an upper end and a lower end opened.
- An inert gas supply unit or the like is fixed to the furnace port portion 209.
- the furnace port portion 209 is provided so as to support the reaction tube 203.
- An O-ring 220a as a seal member is provided between the furnace port portion 209 and the reaction tube 203.
- a reaction vessel is formed by the reaction tube 203 and the furnace port portion 209.
- a seal cap 219 as a furnace port lid body capable of airtightly closing the lower end opening of the furnace port unit 209 is provided below (lower end) of the furnace port unit 209.
- the seal cap 219 is brought into contact with the lower end of the furnace port portion 209 from the lower side in the vertical direction.
- the seal cap 219 is made of a metal such as stainless steel and has a disk shape.
- an O-ring 220 b is provided as a seal member that comes into contact with the lower end of the furnace port portion 209.
- a rotation mechanism 267 for rotating a boat 217 described later is installed on the opposite side of the seal cap 219 from the processing chamber 201.
- a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217, and is configured to rotate the wafer 200 by rotating the boat 217.
- the boat 217 and the seal cap 219 are configured to be raised and lowered in the vertical direction by a boat elevator 215 as an elevating mechanism disposed outside the reaction tube 203, thereby allowing the boat 217 to move in the processing chamber 201. It is possible to carry in and out.
- the boat 217 is made of, for example, quartz (SiO 2 ), silicon carbide (SiC), or the like.
- a heat insulating member 218 made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC) is provided at the lower part of the boat 217, so that heat from the heater 207 is not easily transmitted to the seal cap 219 side. It is configured as follows.
- the furnace port portion 209 is made of a metal such as stainless steel (SUS material) or nickel (Ni) alloy, and is formed in a cylindrical shape having upper and lower ends opened.
- the furnace port portion 209 has an upper surface 209a, an inner peripheral surface 209b, and a lower surface 209c.
- An inert gas supply port 321 for supplying an inert gas is formed on the inner peripheral surface 209b, and the inert gas supply port 321 is formed.
- the inert gas supply units 232d and 232e are attached to the main body.
- the inert gas supply unit 232e is provided at a position facing the inert gas supply unit 232d. Thereby, an inert gas can be evenly supplied between the furnace port portion 209 and the reaction tube 203.
- An inert gas such as N 2 (nitrogen) gas is supplied from the inert gas supply units 232d and 232e.
- the lower part (lower end) of the reaction tube 203 is formed with a protruding part 203A that protrudes to the entire outer circumference side and an extending part 203B that extends downward from the protruding part 203A.
- the outer periphery (outer wall) side below (lower end) of the reaction tube 203 is an area where the boat 217 is positioned in the processing chamber 201, in other words, an area where the wafer 200 is accommodated and processed (hereinafter referred to as substrate processing). It is formed so as to protrude outward from the outer peripheral surface.
- the outer peripheral side below the reaction tube 203 is formed by surfaces 203a to 203g.
- the first surface 203 a is an inclined surface formed so as to be inclined from the outer peripheral surface of the substrate processing region of the reaction tube 203.
- the second surface 203b is provided continuously in the vertical direction from the first surface 203a.
- the third surface 203c is an inclined surface and is provided continuously with the second surface 203b.
- the fourth surface 203 d is provided continuously with the third surface 203 c and is provided so as to protrude in a direction orthogonal to the outer peripheral surface of the reaction tube 203.
- the fifth surface 203e is provided continuously in the vertical direction from the fourth surface 203d.
- the sixth surface 203 f is provided continuously from the fifth surface 203 e to the processing chamber 201 side, and is provided in a direction orthogonal to the outer peripheral surface of the reaction tube 203.
- the seventh surface 203g is provided continuously in the vertical direction from the sixth surface 203f, and the connection surface with the sixth surface 203f is formed in a curved shape (R shape).
- a protruding portion 203A as a flange is formed from the fourth surface 203d, the fifth surface 203e, and the sixth surface 203f.
- the first surface 203a to the third surface 203c may be included in the protruding portion 203A.
- the protruding portion 203A is installed on the upper surface 209a of the furnace port portion 209 via an O-ring 220a.
- the inner surface on the inner circumference (inner wall) side below (lower end) of the reaction tube 203 is formed so as to protrude to the inner side (the processing chamber 201 side) from the inner surface that is the inner circumference surface of the substrate processing region.
- the inner peripheral side below the reaction tube 203 is formed by surfaces 203h and 203i.
- the eighth surface 203 h is an inclined surface formed so as to be inclined from the inner peripheral surface of the substrate processing region of the reaction tube 203.
- the ninth surface 203i is provided continuously in the vertical direction from the eighth surface 203h.
- the gas flow in the processing chamber 201 can be improved, and gas can be prevented from staying at the protruding portion and adversely affecting the film formation.
- the thickness of the lower end portion of the reaction tube 203 can be made thicker than the thickness above the reaction tube 203 (position corresponding to the substrate processing region).
- the physical distance from the furnace port 209 to the furnace port 209 can be increased, and gas can be prevented from entering the furnace port 209.
- reaction tube 203 since the reaction tube 203 is protruded to the inner peripheral side, the reaction tube 203 can be prevented from becoming larger in the radial direction than the case where the reaction tube 203 is protruded to the outer peripheral side by the amount of the protrusion to the inner peripheral side.
- the area (footprint) for installing 203 can be reduced.
- the seventh surface 203g and the ninth surface 203i are connected substantially horizontally by the tenth surface 203j, and the lower end portion of the reaction tube 203 is formed by the surfaces 203a to 203j.
- An extending portion 203B is formed from the seventh surface 203g, the ninth surface 203i, and the tenth surface 203j, and this extending portion 203B covers the inner peripheral surface 209b (inner wall surface) of the furnace port portion 209. Configured as follows.
- a first gap 322 is formed between the inner peripheral surface 209b of the furnace port portion 209 and the outer surface (seventh surface 203g) of the extending portion 203B.
- a second gap 324 is formed between the lower end (tenth surface 203 j) of the reaction tube 203 and the seal cap 219.
- the inert gas supplied from the inert gas supply units 232d and 232e is supplied toward the extending unit 203B via the inert gas supply port 321, and flows through the first gap 322 and the second gap 324.
- the gas is supplied into the processing chamber 201 and the inner peripheral surface of the furnace port portion 209 is purged with an inert gas.
- the inert gas is supplied into the first gap 322 at a pressure higher than the pressure in the processing chamber 201, and the pressure in the first gap 322 and the second gap 324 is higher than the pressure in the processing chamber 201. Get higher.
- the flow rate of the inert gas supplied from the inert gas supply unit 232d and the flow rate of the inert gas supplied from the inert gas supply unit 232e are made the same. Further, the lengths of the pipes from the inert gas supply source (not shown) to the inert gas supply units 232d and 232e are made substantially the same. Thereby, a uniform gas flow can be formed over the entire circumference of the lower end of the reaction tube 203, and the pressure in the first gap 322 can be made substantially uniform over the entire circumference. The flow rate of the inert gas into the processing chamber 201 can be made substantially uniform over the entire circumference.
- the inert gas can be supplied into the processing chamber 201 from the entire periphery of the lower end of the reaction tube 203 at a substantially uniform flow rate, and the processing gas concentration in the processing chamber 201 does not become non-uniform. It can suppress that the uniformity of the film-forming of a board
- substrate is deteriorated.
- the width of the first gap 322 in the horizontal direction, and the width of the gap C between the inner peripheral surface 209b of the furnace port portion 209 and the extending portion 203B is smaller (narrower) than the thickness T 1 of the extending portion 203B. ).
- the wall thickness T 1 of the extending portion 203B is larger than the wall thickness T 2 that is the thickness of the reaction tube 203 corresponding to the substrate processing region.
- the lower part of the reaction tube 203 (around the furnace opening) thicker than the substrate processing region, it is possible to suppress the occurrence of cracks on the surface of the reaction tube 203 due to thermal stress and film stress. It is possible to increase the strength of the reaction tube 203 by preventing breakage below.
- the seventh surface 203g which is the outer peripheral surface of the extending portion 203B, is on the inner side (the processing chamber 201 side) than the second surface 203b, which is the upper portion of the protruding portion 203A and is the outer peripheral surface of the reaction tube 203. Be placed.
- the wall thickness T 1 of the extending portion 203B is formed, it is not necessary to shift the protruding portion 203A radially outward, so that the furnace port portion 209 is prevented from shifting in the radially outer peripheral direction of the reaction tube 203.
- the area for installation (footprint) can be reduced.
- the reaction tube 203 can be installed without modifying the furnace port portion 209 of the conventional apparatus, the cost can be reduced.
- the joint portion (corner portion) between the outer peripheral surface of the extending portion 203B and the protruding portion 203A is curved upward (outward).
- R) It may be a shape.
- the end portion of the extending portion 203B (the joint portion between the seventh surface 203g and the tenth surface 203j and the joint portion between the ninth surface 203i and the tenth surface 203j) has a curved (R) shape. Good.
- both ends at the lower end of the extending portion 203B are connected to the connecting portion between the extending portion 203B and the protruding portion 203A.
- the curved surface (R) shape (a shape with a large curvature) be formed on the tenth surface 203j). This facilitates introduction of a downward flow of inert gas along the outer peripheral surface (seventh surface 203g) of the extending portion 203B into the second gap 324, so that the inert gas is introduced into the first gap 322.
- the second gap 324 is narrower than the first gap 322, the flow rate of the inert gas passing through the second gap 324 can be ensured.
- the joint between the ninth surface 203 i and the tenth surface 203 j is curved (R), the inert gas having a high flow rate in the second gap 324 is discharged upward in the processing chamber 201. Therefore, the back diffusion of gas from the processing chamber 201 side to the first gap 322 side can be suppressed.
- the end portion of the extending portion 203B has a curved (R) shape, but the curved portion (R) shape of the end portion of the extending portion 203B has an angle of 45 degrees as shown in FIG. Including those that are straight and chamfered.
- the same effect can be obtained not only in the curved (R) shape but also in a notched shape, but if there is a corner, problems such as gas stagnation and retention tend to occur. It is preferable that the corner portion is eliminated.
- the inert gas supply units 232d and 232e supply the inert gas toward the curved (R) -shaped portion of the joint portion between the outer peripheral surface of the extending portion 203B and the protruding portion 203A.
- the inert gas supply units 232d and 232e supply the inert gas toward the curved (R) -shaped portion of the joint portion between the outer peripheral surface of the extending portion 203B and the protruding portion 203A.
- a controller 280 as a control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 280a, a RAM (Random Access Access Memory) 280b, a storage device 280c, and an I / O port 280d.
- the RAM 280b, the storage device 280c, and the I / O port 280d are configured to exchange data with the CPU 280a via the internal bus 280e.
- an input / output device 122 configured as a touch panel or the like is connected to the controller 280.
- the storage device 280c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), and the like.
- a control program for controlling the operation of the substrate processing apparatus, a process recipe in which a substrate processing procedure and conditions described later, and the like are stored are readable.
- the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 280 to execute each procedure in the substrate processing process described later, and functions as a program.
- the process recipe, the control program, and the like are collectively referred to simply as a program.
- program When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both.
- the RAM 280b is configured as a memory area (work area) in which a program or data read by the CPU 280a is temporarily stored.
- the I / O port 280d includes an MFC (mass flow controller) (not shown), an open / close valve, and a pressure sensor 245 as a flow rate control device for controlling the flow rates of the gas flowing through the gas supply units 232a, 232b, 232c, 232d, and 232e. , APC valve 243, vacuum pump 246, heater 207, temperature sensor (not shown), rotation mechanism 267, boat elevator 215, and the like.
- MFC mass flow controller
- a pressure sensor 245 as a flow rate control device for controlling the flow rates of the gas flowing through the gas supply units 232a, 232b, 232c, 232d, and 232e.
- APC valve 243 vacuum pump 246, heater 207, temperature sensor (not shown), rotation mechanism 267, boat elevator 215, and the like.
- the CPU 280a is configured to read and execute a control program from the storage device 280c and to read a process recipe from the storage device 280c in response to an operation command input from the input / output device 122 or the like.
- the CPU 280a controls operations of the APC valve 243, the heater 207, the vacuum pump 246, the rotation mechanism 267, the boat elevator 215, and the like so as to follow the contents of the read process recipe.
- the cocoon controller 280 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer.
- an external storage device storing the above-described program for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card
- the controller 280 of this embodiment can be configured by installing a program on a general-purpose computer using the external storage device 123.
- the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123.
- the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line.
- the storage device 280c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 280c alone, may include only the external storage device 123 alone, or may include both.
- dichlorosilane (SiH 2 Cl 2 , abbreviated as DCS) gas which is a silicon-containing gas
- NH 3 ammonia, which is a nitrogen-containing gas
- SiN films A structure for forming Si 3 N 4 films (hereinafter referred to as SiN films) on a plurality of wafers 200 using N 2 (nitriding) gas which is an inert gas as a third processing gas is described. To do.
- the operation of each part constituting the substrate processing apparatus is controlled by the controller 280.
- N 2 gas as an inert gas is supplied from the inert gas supply units 232d and 232e supplied to the lower end of the reaction tube 203 at least in a state where the wafer 200 is processed.
- the inert gas for example, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used in addition to N 2 gas.
- the lower end opening of the furnace port portion 209 is opened.
- the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 215 and loaded into the processing chamber 201 (boat loading).
- the seal cap 219 seals the lower end of the furnace port portion 209 via the O-ring 220b.
- the pressure is adjusted by the pressure sensor 245, the APC valve 243, and the vacuum pump 246 so that the inside of the processing chamber 201 has a desired pressure (degree of vacuum). Further, heating and temperature adjustment are performed by a temperature sensor (not shown) and a heater 207 so that the inside of the processing chamber 201 has a desired temperature.
- DCS gas is allowed to flow from the first nozzle 233a while the vacuum pump 246 is operated.
- the flow rate of the DCS gas is adjusted by a mass flow controller (not shown).
- the DCS gas whose flow rate has been adjusted is supplied into the processing chamber 201 through the first nozzle 233a and exhausted from the exhaust pipe 231.
- N 2 gas is simultaneously supplied from the third nozzle 233c.
- N 2 gas is supplied into the processing chamber 201 together with the DCS gas, and is exhausted from the exhaust pipe 231.
- the supply of DCS gas is stopped.
- the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the remaining DCS gas and the like are removed from the inside of the processing chamber 201.
- N 2 gas is supplied (purged) from the third nozzle 233c into the processing chamber 201, the effect of removing the remaining DCS gas is further enhanced.
- NH 3 gas is allowed to flow from the second nozzle 233b.
- N 2 gas is simultaneously supplied from the third nozzle 233c.
- the NH 3 gas and N 2 gas are exhausted from the exhaust pipe 231 after being supplied into the processing chamber 201.
- the supply of NH 3 gas is stopped.
- the APC valve 243 of the gas exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the NH 3 gas remaining in the processing chamber 201 and contributing to nitridation is removed. Excluded from the processing chamber 201.
- the supply of N 2 gas from the third nozzle 233c into the processing chamber 201 is maintained. This enhances the effect of removing NH 3 gas remaining in the processing chamber 201 and remaining unreacted or contributed to nitridation from the processing chamber 201.
- a SiN film containing silicon and nitrogen having a predetermined thickness can be formed on the wafer 200.
- an inert gas such as N 2 gas is exhausted while being supplied into the process chamber 201, whereby the inside of the process chamber 201 is purged with the inert gas.
- the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
- the seal cap 219 is lowered by the boat elevator 215 so that the lower end of the furnace port portion 209 is opened and the processed wafer 200 is supported by the boat 217 from the lower end of the furnace port portion 209 to the reaction tube 203. Carried out (boat unload). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).
- the SiN film can be formed on the surface of the wafer 200 using the DCS gas and the NH 3 gas.
- FIG. 4 is an enlarged cross-sectional view showing a lower end portion of the reaction tube 303 according to another embodiment.
- the reaction tube 303 according to another embodiment is different from the reaction tube 203 according to the above-described embodiment in that a protruding portion 304 is provided at the lower end portion of the extending portion 203B.
- the lower end portion of the extending portion 303B has a plurality of convex portions 304 protruding downward.
- the upper surface of the seal cap 219 has a plurality of concave portions 306 that engage with the convex portions 304, respectively. That is, the convex portion 304 at the lower end of the reaction tube 303 is engaged with the concave portion 306 of the seal cap 219, whereby a part of the reaction tube 303 is fitted into the seal cap 219.
- the inert gas supplied from the inert gas supply units 232d and 232e is supplied toward the extending unit 303B, flows through the first gap 322 and the second gap 324, and enters the processing chamber 201.
- the inert gas is supplied at a pressure higher than the pressure in the processing chamber 201, and the by-product is prevented from entering the second gap 324 and the first gap 322, and the inner periphery of the furnace port portion 209 is suppressed.
- the surface is purged with an inert gas.
- the processing gas hardly reaches the furnace port 209. As a result, the amount of contact between the inner peripheral surface of the furnace port portion 209 and the processing gas is reduced, and even if a corrosive gas is used as the processing gas, the furnace port portion is prevented from corroding and generation of particles. Can be suppressed.
- the protruding portion of the reaction tube is provided so as to cover the upper surface of the furnace port portion, and the extending portion of the reaction tube is provided so as to cover the inner peripheral surface of the furnace port portion.
- the present invention is not limited to the above-described embodiment, but has been described as a single tube specification with only a reaction tube. However, the present invention is not limited to this. Even a specification of a triple pipe or more is applicable.
- the furnace port portion 209 has been described as being made of a metal material.
- the present invention is not limited to this, and a non-metal material is also applicable.
- two inert gas supply units are provided in the lower part of the reaction tube.
- the present invention is not limited to this, and one may be used. If it is one, it is installed on the side facing the exhaust pipe. Thereby, a smooth flow path can be formed in the entire gas supply and exhaust.
- the present invention relates to a semiconductor manufacturing technique, and more particularly to a heat treatment technique in which a substrate to be processed is accommodated in a processing chamber and processed in a state of being heated by a heater, for example, a semiconductor wafer on which a semiconductor integrated circuit device (semiconductor device) is fabricated.
- a substrate to be processed is accommodated in a processing chamber and processed in a state of being heated by a heater, for example, a semiconductor wafer on which a semiconductor integrated circuit device (semiconductor device) is fabricated.
- a substrate processing equipment used for oxidation processing, diffusion processing, carrier activation after ion implantation, reflow for planarization, annealing, and film formation processing by thermal CVD reaction, etc. it can.
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Abstract
Description
基板を処理する基板処理領域を内部に有する反応管と、
前記反応管の下部に配置される炉口部と、を有し、
前記反応管は、
前記反応管の下方の外周側に突出する突出部と、
前記反応管の下端から下方に延伸し、前記基板処理領域に対応する位置における前記反応管の厚さよりも厚く形成され、前記炉口部の内周面を覆う延伸部と、
を有する技術が提供される。
200・・・ウエハ
201・・・処理室
203,303・・・反応管
209・・・炉口部
217・・・ボート
219・・・シールキャップ
231・・・ガス排気管
232・・・ガス供給部
322・・・第1の間隙
324・・・第2の間隙
Claims (12)
- 基板を処理する基板処理領域を内部に有する反応管と、
前記反応管の下部に配置される炉口部と、を有し、
前記反応管は、
前記反応管の下方の外周側に突出する突出部と、
前記反応管の下端から下方に延伸し、前記基板処理領域に対応する位置における前記反応管の厚さよりも厚く形成され、前記炉口部の内周面を覆う延伸部と、
を有する基板処理装置。 - 前記延伸部の内面は、前記基板処理領域に対応する位置における前記反応管の内面よりも内側に突き出ている請求項1に記載の基板処理装置。
- 前記延伸部の外面に向けて不活性ガスを供給する不活性ガス供給部を有する請求項1に記載の基板処理装置。
- 前記延伸部の外面と前記突出部との接合部は湾曲形状である請求項3に記載の基板処理装置。
- 前記不活性ガス供給部は、前記接合部に向けて不活性ガスを供給する請求項4に記載の基板処理装置。
- 前記延伸部の下端部は湾曲形状であって、前記接合部よりも小さい曲率で湾曲する請求項4に記載の基板処理装置。
- 前記不活性ガス供給部を互いに対向する位置に2つ設け、2つの不活性ガス供給部から供給される不活性ガスの流量をそれぞれ同一にする請求項3に記載の基板処理装置。
- 不活性ガス供給源から2つの前記不活性ガス供給部までの配管長さはそれぞれ同一である請求項7に記載の基板処理装置。
- 前記炉口部の内周面と前記延伸部の外面との水平方向の隙間は、前記延伸部の厚さよりも小さい請求項1に記載の基板処理装置。
- 前記基板処理領域に対応する位置における前記反応管の外面よりも前記延伸部の外面が内側に配置される請求項1に記載の基板処理装置。
- 前記延伸部に向けてクリーニングガスを供給するクリーニングガス供給部を有する請求項1に記載の基板処理装置。
- 炉口部の上部に配置され、基板を処理する基板処理領域を内部に有する反応管であって、
前記反応管の下方の外周側に突出する突出部と、前記反応管の下端から下方に延伸し、前記基板処理領域に対応する位置における前記反応管の厚さよりも厚く形成され、前記炉口部の内周面を覆う延伸部と、
を有する反応管。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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SG11201705934UA SG11201705934UA (en) | 2015-02-04 | 2016-01-26 | Substrate treatment apparatus and reaction tube |
KR1020177020298A KR101942206B1 (ko) | 2015-02-04 | 2016-01-26 | 기판 처리 장치 및 반응관 |
CN201680006272.XA CN107210218B (zh) | 2015-02-04 | 2016-01-26 | 衬底处理装置以及反应管 |
JP2016573292A JP6257008B2 (ja) | 2015-02-04 | 2016-01-26 | 基板処理装置および反応管 |
US15/665,917 US10351951B2 (en) | 2015-02-04 | 2017-08-01 | Substrate treatment apparatus including reaction tube with opened lower end, furnace opening member, and flange configured to cover upper surface of the furnace opening member |
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JP2015019919 | 2015-02-04 | ||
JP2015-019919 | 2015-09-08 |
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US15/665,917 Continuation US10351951B2 (en) | 2015-02-04 | 2017-08-01 | Substrate treatment apparatus including reaction tube with opened lower end, furnace opening member, and flange configured to cover upper surface of the furnace opening member |
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WO2016125626A1 true WO2016125626A1 (ja) | 2016-08-11 |
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JP (1) | JP6257008B2 (ja) |
KR (1) | KR101942206B1 (ja) |
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SG11201913857YA (en) | 2017-08-30 | 2020-01-30 | Kokusai Electric Corp | Protective plate, substrate processing apparatus, and method of manufacturing semiconductor device |
JP6916766B2 (ja) | 2018-08-27 | 2021-08-11 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
KR102477770B1 (ko) | 2018-05-08 | 2022-12-14 | 삼성전자주식회사 | 막 형성 장치, 막 형성 방법 및 막 형성 장치를 이용한 반도체 장치의 제조 방법 |
CN217280688U (zh) * | 2018-09-12 | 2022-08-23 | 株式会社国际电气 | 基板处理装置及基板保持部 |
US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
CN111962038B (zh) * | 2020-09-23 | 2023-05-12 | 兰州天亿石化设备维修技术有限公司 | 一种大口径高压金属软管内壁镀膜装置及方法 |
JP7317912B2 (ja) * | 2021-09-21 | 2023-07-31 | 株式会社Kokusai Electric | 炉口部構造、基板処理装置、および半導体装置の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093733A (ja) * | 2000-09-19 | 2002-03-29 | Koyo Thermo System Kk | 半導体ウエハの熱処理装置 |
JP2005235937A (ja) * | 2004-02-18 | 2005-09-02 | Koyo Thermo System Kk | 熱処理容器のフランジ保持構造 |
JP2006093200A (ja) * | 2004-09-21 | 2006-04-06 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2007227470A (ja) * | 2006-02-21 | 2007-09-06 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2014090145A (ja) * | 2012-10-31 | 2014-05-15 | Tokyo Electron Ltd | 熱処理装置 |
JP2014201803A (ja) * | 2013-04-05 | 2014-10-27 | 古河機械金属株式会社 | ベルジャおよび真空処理装置 |
JP2014209572A (ja) * | 2013-03-25 | 2014-11-06 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
Family Cites Families (6)
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JPWO2004075272A1 (ja) * | 2003-02-21 | 2006-06-01 | 株式会社日立国際電気 | 基板処理装置及び半導体デバイスの製造方法 |
WO2005015613A2 (en) * | 2003-08-07 | 2005-02-17 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals |
WO2008016143A1 (fr) * | 2006-08-04 | 2008-02-07 | Hitachi Kokusai Electric Inc. | Appareil de traitement de substrat et procédé de fabrication d'un dispositif semi-conducteur |
US8070880B2 (en) | 2007-10-22 | 2011-12-06 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus |
JP6146886B2 (ja) | 2014-03-26 | 2017-06-14 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093733A (ja) * | 2000-09-19 | 2002-03-29 | Koyo Thermo System Kk | 半導体ウエハの熱処理装置 |
JP2005235937A (ja) * | 2004-02-18 | 2005-09-02 | Koyo Thermo System Kk | 熱処理容器のフランジ保持構造 |
JP2006093200A (ja) * | 2004-09-21 | 2006-04-06 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2007227470A (ja) * | 2006-02-21 | 2007-09-06 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2014090145A (ja) * | 2012-10-31 | 2014-05-15 | Tokyo Electron Ltd | 熱処理装置 |
JP2014209572A (ja) * | 2013-03-25 | 2014-11-06 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
JP2014201803A (ja) * | 2013-04-05 | 2014-10-27 | 古河機械金属株式会社 | ベルジャおよび真空処理装置 |
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CN107210218B (zh) | 2020-09-11 |
KR20170097749A (ko) | 2017-08-28 |
US20170335452A1 (en) | 2017-11-23 |
SG11201705934UA (en) | 2017-09-28 |
JP6257008B2 (ja) | 2018-01-10 |
US10351951B2 (en) | 2019-07-16 |
KR101942206B1 (ko) | 2019-01-24 |
JPWO2016125626A1 (ja) | 2017-11-02 |
CN107210218A (zh) | 2017-09-26 |
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