WO2016095858A1 - Topological insulator saturable absorber mirror and fabricating method therefor - Google Patents
Topological insulator saturable absorber mirror and fabricating method therefor Download PDFInfo
- Publication number
- WO2016095858A1 WO2016095858A1 PCT/CN2015/097917 CN2015097917W WO2016095858A1 WO 2016095858 A1 WO2016095858 A1 WO 2016095858A1 CN 2015097917 W CN2015097917 W CN 2015097917W WO 2016095858 A1 WO2016095858 A1 WO 2016095858A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- topological insulator
- mirror
- saturable absorption
- mode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
Definitions
- the present invention relates to the field of laser technology, and in particular, to a topological insulator saturable absorption mirror and a preparation method thereof.
- passive mode-locking technology is an effective way to achieve ultra-fast pulse output of fiber lasers, and the key technology of passive mode-locking is the need for saturable absorption in fiber laser resonators.
- researchers have used a variety of saturable absorption effects to obtain passive mode-locked ultrafast pulse outputs in fiber lasers.
- SESAM semiconductor saturable absorption mirrors
- the technical problem to be solved by the present invention is to provide a topological insulator saturable absorption mirror and a preparation method thereof, so as to solve the commercial application adopted in the prior art.
- SESAM is expensive, complicated in manufacturing process and low in reliability.
- the present invention is implemented as follows:
- a topological insulator saturable absorber mirror comprising a substrate and a topological insulator film plated on the substrate.
- the substrate is quartz or silicon carbide.
- the material of the topological insulator film includes any one of antimony telluride, antimony selenide and antimony telluride.
- a method for preparing a topological insulator saturable absorption mirror includes the following steps:
- topological insulator target Ionizing the surface of the topological insulator target to generate a plasma of the topological insulator, the plasma depositing a topological insulator film on the substrate;
- Controlling the deposition time and/or deposition temperature causes the topological insulator film to reach a desired thickness.
- the substrate is quartz or silicon carbide.
- the material of the topological insulator film includes any one of antimony telluride, antimony selenide and antimony telluride.
- a mode-locked fiber laser comprising a semiconductor pump laser, an optical coupling component, a resonant cavity; pump light generated by the semiconductor pump laser is collimated by the optical coupling component and coupled into the resonant cavity;
- the resonant cavity includes any of the above-described topological insulator saturable absorption mirrors that are used for laser mode-locking of the resonant cavity.
- the resonant cavity further includes:
- Two-color mirror laser crystal, first laser high mirror, second laser high mirror;
- the pump light generated by the semiconductor pump laser is collimated by the optical coupling component, and then enters the laser crystal through the dichroic mirror to generate laser light, and the generated laser light can be reflected into the first through the dichroic mirror.
- the laser high reflection mirror is further reflected by the first laser high reflection mirror to the topological insulator saturable absorption mirror for clamping, and the clamped laser light is returned to the laser crystal through the original optical path for amplification; the amplified laser Output by the second laser high mirror.
- the mode-locked fiber laser further includes a prism pair and an output mirror; the laser light output by the second laser high mirror is compressed by the prism pair and then output through the output mirror.
- the resonant cavity further includes a double-clad active fiber, a pair of convex lenses; the pump light generated by the semiconductor pump laser is collimated by the optical coupling component and coupled into the double-clad active fiber Generating a laser beam; the generated laser light is directly focused by the convex lens to the topological insulator saturable absorption mirror for clamping, and the mode-locked laser light is returned to the double-clad active fiber through the original optical path for amplification; after amplification The laser is output through the double-clad active fiber.
- the novel topological insulator saturable absorption mirror has a high damage threshold, is simple in structure, low in cost, high in reliability, and is suitable for mass production, and at the same time, the clamping mode of the saturable absorption mirror can be utilized by using the topological insulator.
- Fiber lasers have the advantages of high reliability and suitable for the conversion of results.
- FIG. 1 is a schematic structural view of a topological insulator saturable absorption mirror according to an embodiment of the present invention
- FIG. 2 is a schematic flow chart of a method for preparing a topological insulator saturable absorption mirror according to an embodiment of the present invention
- FIG. 3 is a schematic structural view of a mode-locked fiber laser provided by an embodiment of the present invention.
- FIG. 4 is a schematic structural view of a mode-locked fiber laser according to another embodiment of the present invention.
- an embodiment of the present invention provides a topological insulator saturable absorption mirror, comprising a substrate 101 and a topological insulator film 102 plated on the substrate.
- the substrate 101 may be made of quartz or silicon carbide, such as a quartz plate or a silicon carbide sheet as the substrate 101.
- the material of the topological insulator film 102 may include bismuth telluride, Any of selenium telluride and antimony telluride.
- the topological insulator saturable absorption mirror works by using it as a high reflection mirror for the laser.
- the laser in the cavity is reflected by the topological insulator saturable absorption mirror
- the laser can be modulated by the topological insulator saturable absorption mirror.
- This topological insulator saturable absorption mirror has a high damage threshold and can be used as a light mirror for broadband modulation of light, which can be used as a key device for pulsed laser generation in laser systems.
- an embodiment of the present invention provides a method for fabricating the above-described topological insulator saturable absorption mirror, comprising the following steps:
- Step S1 placing the substrate and the topological insulator target in a vacuum chamber
- Step S2 ionizing the surface of the topological insulator target to generate a plasma of the topological insulator, and depositing a plasma on the substrate to form a topological insulator film;
- Step S3 controlling the deposition time and/or the deposition temperature to achieve the desired thickness of the topological insulator film.
- quartz or silicon carbide can be used as a base material, such as a quartz plate or a silicon carbide sheet as a substrate, and at the same time, the topology
- the material of the insulator film includes bismuth telluride, Any of selenium telluride and antimony telluride.
- the topological insulator target and the substrate may be placed in a vacuum chamber, and the surface of the topological insulator target is ionized by laser pulse deposition to form a plasma, and the plasma is deposited on the substrate to form a topological insulator film.
- the thickness of the deposited film can be controlled by controlling parameters such as deposition time or deposition temperature, and deposition can be stopped when the thickness of the deposited topological insulator film reaches a desired thickness.
- Conventional semiconductor saturable absorption mirrors are prepared by chemical vapor deposition.
- the semiconductor materials require layer growth, and each layer needs precise control.
- the prepared semiconductor saturable absorption mirror has a bandwidth of only several tens of nanometers.
- the invention adopts the method of laser pulse deposition, has simple preparation process and can be mass-produced, and a topological insulator target can prepare thousands of topological insulator saturable absorption mirrors.
- the thickness and uniformity of the deposited topological insulator film can be controlled by controlling the temperature and time of deposition, so that mass production can be carried out at the same time, and the topological insulator can be made to have the same specifications of the saturated absorption mirror.
- the topological insulator saturable absorption mirror bandwidth can be extended from visible light to infrared or even microwave.
- an embodiment of the present invention further provides a mode-locked fiber laser, where the laser includes The semiconductor pump laser 1, the optical coupling component 2, the resonant cavity 3, and the pump light generated by the semiconductor pump laser 1 are collimated by the optical coupling assembly 2 and coupled into the resonant cavity 3.
- the resonant cavity 3 includes any of the above-described topological insulator saturable absorption mirrors 6, which are used for laser mode-locking of the resonant cavity 3.
- the resonant cavity 3 further includes a dichroic mirror 3, a laser crystal 4, a first laser high mirror 5, and a second laser high mirror 7.
- a two-color mirror is an optical element that transmits almost completely light of a certain wavelength and almost completely reflects light of other wavelengths.
- the dichroic mirror 3 transmits the pump light generated by the semiconductor pump laser 1 high, and the laser light generated by the laser crystal 4 is highly reflected.
- the optical coupling assembly 2 includes a pair of convex lenses including two convex lenses 2, and the pump light generated by the semiconductor pump laser 1 is directly focused by a convex lens in the optical coupling assembly 2 and then passed through the dichroic mirror 3 into the laser crystal 4
- the laser light is generated, and the generated laser light can be reflected by the dichroic mirror 3 into the first laser high reflection mirror 5, and then reflected by the first laser high reflection mirror 5 to the topological insulator saturable absorption mirror 6 for clamping, and the laser after the mode locking passes through the original
- the optical path is returned to the laser crystal 4 for amplification, and the amplified laser light is output through the second laser high reflection mirror 7.
- the mode-locked fiber laser 1 can also include a prism pair and an output mirror 9, which includes two prisms 8. The laser light output from the second laser high mirror 7 is compressed by the prism pair and then output through the output mirror 9.
- another embodiment of the present invention further provides another mode-locked fiber laser, the laser including
- the semiconductor pump laser 1, the optical coupling component 2, the resonant cavity 3, and the resonant cavity 3 include any of the above-described topological insulator saturable absorption mirrors 6, and the topological insulator saturable absorption mirror 6 is used for laser mode-locking of the resonant cavity 3.
- the pump light generated by the semiconductor pump laser 1 is collimated by the optical coupling assembly 2 and coupled into the cavity 3.
- the optical coupling assembly 2 includes a collimator 11, a focusing mirror 202, and a dichroic mirror 3.
- the resonant cavity 3 further includes a double-clad active optical fiber 10, a pair of convex lenses, and the pair of convex lenses includes two convex lenses 2.
- the pump light generated by the semiconductor pump laser 1 is collimated by the optical coupling component 2 and coupled into the double-clad active fiber 10 to generate a laser, and the generated laser is directly focused by a convex lens to the topological insulator saturable absorption mirror 6 for locking.
- the mold, the mode-locked laser light is returned to the double-clad active optical fiber 10 through the original optical path for amplification, and the amplified laser light is output through the double-clad active optical fiber 10.
Abstract
A topological insulator saturable absorber mirror and a fabricating method therefor. The topological insulator saturable absorber mirror (6) comprises a base (101) and a topological insulator thin film (102) plated on the base (101). The fabricating method comprises the following steps: place a base (101) and a topological insulator target material in a vacuum chamber (S1); ionize the surface of the topological insulator target material to produce a plasma of the topological insulator, and the plasma deposits on the base (101) to form a topological insulator thin film (102) (S2); control deposition time and/or a deposition temperature to enable the topological insulator thin film (102) to have the needed thickness (S3). The topological insulator saturable absorber mirror (6) has a high damage threshold, a simple structure, low costs, high reliability and is suitable for mass production. Meanwhile, a mode locked fiber laser of the topological insulator saturable absorber mirror (6) has the advantages of high reliability and being suitable for achievement transformation.
Description
本发明涉及激光技术领域，尤其涉及一种拓扑绝缘体可饱和吸收镜及其制备方法。 The present invention relates to the field of laser technology, and in particular, to a topological insulator saturable absorption mirror and a preparation method thereof.
利用被动锁模技术是光纤激光器实现超快脉冲输出的一种有效途径，而被动锁模的关键技术是光纤激光器谐振腔中需要具备可饱和吸收效应。目前，研究人员已经利用多种可饱和吸收效应在光纤激光器中获得被动锁模超快脉冲输出。一般来说，为了克服光纤激光锁模环境不稳定的缺点，研究人员通常采用半导体可饱和吸收镜（SESAM）来实现光纤激光器锁模超快脉冲输出。然而，由于商用SESAM价格昂贵、制作工艺复杂、可饱和吸收带宽窄、一般仅支持皮秒级别的脉冲输出，并且损伤阈值也较低，所以也不适用于全方位研究超快光纤激光器的动力学特性。因此，研制出成本低廉、工艺简单、高性能的可饱和吸收体一直是超快激光物理领域追求的目标。
The use of passive mode-locking technology is an effective way to achieve ultra-fast pulse output of fiber lasers, and the key technology of passive mode-locking is the need for saturable absorption in fiber laser resonators. At present, researchers have used a variety of saturable absorption effects to obtain passive mode-locked ultrafast pulse outputs in fiber lasers. In general, in order to overcome the shortcomings of fiber laser mode-locking environment instability, researchers often use semiconductor saturable absorption mirrors (SESAM) to achieve fiber laser mode-locked ultra-fast pulse output. However, commercial SESAM is expensive, complicated in fabrication process, narrow in saturation absorption bandwidth, generally supports only picosecond pulse output, and has a low damage threshold, so it is not suitable for omnidirectional research on the dynamics of ultrafast fiber lasers. characteristic. Therefore, the development of a low-cost, simple process, high-performance saturable absorber has always been the goal pursued in the field of ultrafast laser physics.
本发明所要解决的技术问题是，提供一种拓扑绝缘体可饱和吸收镜及其制备方法，以解决现有技术中所采用的商用
SESAM 价格昂贵、制作工艺复杂、可靠性低的缺陷 。 The technical problem to be solved by the present invention is to provide a topological insulator saturable absorption mirror and a preparation method thereof, so as to solve the commercial application adopted in the prior art.
SESAM is expensive, complicated in manufacturing process and low in reliability.
本发明是这样实现的： The present invention is implemented as follows:
一种拓扑绝缘体可饱和吸收镜，包括基底及镀在所述基底上的拓扑绝缘体薄膜。 A topological insulator saturable absorber mirror comprising a substrate and a topological insulator film plated on the substrate.
进一步地，所述基底为石英或碳化硅。 Further, the substrate is quartz or silicon carbide.
进一步地，所述拓扑绝缘体薄膜的材料包括碲化铋、 硒化铋及碲化锑中的任意一种。 Further, the material of the topological insulator film includes any one of antimony telluride, antimony selenide and antimony telluride.
一种 拓扑绝缘体可饱和吸收镜 的制备方法，包括如下步骤： A method for preparing a topological insulator saturable absorption mirror includes the following steps:
将基底及拓扑绝缘体靶材置于真空室； Placing the substrate and the topological insulator target in a vacuum chamber;
将所述拓扑绝缘体靶材表面电离化，产生所述拓扑绝缘体的等离子体，所述等离子体沉积在所述基底上形成拓扑绝缘体薄膜；
Ionizing the surface of the topological insulator target to generate a plasma of the topological insulator, the plasma depositing a topological insulator film on the substrate;
控制沉积时间及 / 或沉积温度使所述拓扑绝缘体薄膜达到所需厚度。 Controlling the deposition time and/or deposition temperature causes the topological insulator film to reach a desired thickness.
进一步地， 所述基底为石英或碳化硅。 Further, the substrate is quartz or silicon carbide.
进一步地，所述拓扑绝缘体薄膜的材料包括碲化铋、 硒化铋及碲化锑中的任意一种。 Further, the material of the topological insulator film includes any one of antimony telluride, antimony selenide and antimony telluride.
一种锁模光纤激光器，包括半导体泵浦激光器、光学耦合组件、谐振腔；所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后耦合进入所述谐振腔；所述谐振腔包括上述任意一种拓扑绝缘体可饱和吸收镜，所述拓扑绝缘体可饱和吸收镜用于对所述谐振腔产生的激光锁模。
A mode-locked fiber laser comprising a semiconductor pump laser, an optical coupling component, a resonant cavity; pump light generated by the semiconductor pump laser is collimated by the optical coupling component and coupled into the resonant cavity; The resonant cavity includes any of the above-described topological insulator saturable absorption mirrors that are used for laser mode-locking of the resonant cavity.
进一步地，所述谐振腔还包括： Further, the resonant cavity further includes:
双色镜、激光晶体、第一激光高反射镜、第二激光高反射镜； Two-color mirror, laser crystal, first laser high mirror, second laser high mirror;
所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后透过所述双色镜进入所述激光晶体产生激光，产生的激光可经所述双色镜反射进入所述第一激光高反射镜，再经所述第一激光高反射镜反射到所述拓扑绝缘体可饱和吸收镜进行锁模，锁模后的激光经原光路返回所述激光晶体进行放大；经放大后的激光通过所述第二激光高反射镜输出。
The pump light generated by the semiconductor pump laser is collimated by the optical coupling component, and then enters the laser crystal through the dichroic mirror to generate laser light, and the generated laser light can be reflected into the first through the dichroic mirror. The laser high reflection mirror is further reflected by the first laser high reflection mirror to the topological insulator saturable absorption mirror for clamping, and the clamped laser light is returned to the laser crystal through the original optical path for amplification; the amplified laser Output by the second laser high mirror.
进一步地，所述锁模光纤激光器还包括棱镜对及输出镜；所述第二激光高反射镜输出的激光经所述棱镜对压缩后再通过所述输出镜输出。
Further, the mode-locked fiber laser further includes a prism pair and an output mirror; the laser light output by the second laser high mirror is compressed by the prism pair and then output through the output mirror.
进一步地，所述谐振腔还包括双包层有源光纤、凸透镜对；所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后耦合进入所述双包层有源光纤产生激光；产生的激光经所述凸透镜对准直聚焦到所述拓扑绝缘体可饱和吸收镜进行锁模，锁模后的激光经原光路返回所述双包层有源光纤进行放大；经放大后的激光通过所述双包层有源光纤输出。
Further, the resonant cavity further includes a double-clad active fiber, a pair of convex lenses; the pump light generated by the semiconductor pump laser is collimated by the optical coupling component and coupled into the double-clad active fiber Generating a laser beam; the generated laser light is directly focused by the convex lens to the topological insulator saturable absorption mirror for clamping, and the mode-locked laser light is returned to the double-clad active fiber through the original optical path for amplification; after amplification The laser is output through the double-clad active fiber.
与现有技术相比，这种新型拓扑绝缘体可饱和吸收镜具有高损伤阈值，结构简单、成本低廉，可靠性高，适于批量生产，同时，利用这种拓扑绝缘体可饱和吸收镜的锁模光纤激光器具有高可靠性和适于成果转化的优点。
Compared with the prior art, the novel topological insulator saturable absorption mirror has a high damage threshold, is simple in structure, low in cost, high in reliability, and is suitable for mass production, and at the same time, the clamping mode of the saturable absorption mirror can be utilized by using the topological insulator. Fiber lasers have the advantages of high reliability and suitable for the conversion of results.
图1：本发明实施例提供的拓扑绝缘体可饱和吸收镜的结构示意图； FIG. 1 is a schematic structural view of a topological insulator saturable absorption mirror according to an embodiment of the present invention;
图2：本发明实施例提供的拓扑绝缘体可饱和吸收镜 的制备方法流程示意图； 2 is a schematic flow chart of a method for preparing a topological insulator saturable absorption mirror according to an embodiment of the present invention;
图 3 ：本发明实施例提供的 锁模光纤激光器结构示意图； 3 is a schematic structural view of a mode-locked fiber laser provided by an embodiment of the present invention;
图4：本发明另一实施例提供的锁模光纤激光器结构示意图。 4 is a schematic structural view of a mode-locked fiber laser according to another embodiment of the present invention.
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。
The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
如图1所示，本发明实施例提供了一种拓扑绝缘体可饱和吸收镜，包括基底101及镀在基底上的拓扑绝缘体薄膜102。在本实施例中，基底101可采用石英或碳化硅，比如用石英片或碳化硅片作为基底101。拓扑绝缘体薄膜102的材料可包括碲化铋、
硒化铋及碲化锑中的任意一种。这种拓扑绝缘体可饱和吸收镜的工作原理是，将其作为激光器的一个高反射镜，当谐振腔内的激光被该拓扑绝缘体可饱和吸收镜反射时，激光可被拓扑绝缘体可饱和吸收镜调制，实现锁模。这种拓扑绝缘体可饱和吸收镜具有高损伤阈值，可对光进行宽带调制的同时作为光的反射镜，可用于激光***中脉冲激光产生的关键器件。
As shown in FIG. 1 , an embodiment of the present invention provides a topological insulator saturable absorption mirror, comprising a substrate 101 and a topological insulator film 102 plated on the substrate. In the present embodiment, the substrate 101 may be made of quartz or silicon carbide, such as a quartz plate or a silicon carbide sheet as the substrate 101. The material of the topological insulator film 102 may include bismuth telluride,
Any of selenium telluride and antimony telluride. The topological insulator saturable absorption mirror works by using it as a high reflection mirror for the laser. When the laser in the cavity is reflected by the topological insulator saturable absorption mirror, the laser can be modulated by the topological insulator saturable absorption mirror. , to achieve mode locking. This topological insulator saturable absorption mirror has a high damage threshold and can be used as a light mirror for broadband modulation of light, which can be used as a key device for pulsed laser generation in laser systems.
如图 2 所示，本发明一实施例提供了上述 拓扑绝缘体可饱和吸收镜 的制备方法，包括如下步骤： As shown in FIG. 2, an embodiment of the present invention provides a method for fabricating the above-described topological insulator saturable absorption mirror, comprising the following steps:
步骤 S1 ：将基底及拓扑绝缘体靶材置于真空室； Step S1: placing the substrate and the topological insulator target in a vacuum chamber;
步骤 S2
：将拓扑绝缘体靶材表面电离化，产生拓扑绝缘体的等离子体，等离子体沉积在基底上形成拓扑绝缘体薄膜； Step S2
: ionizing the surface of the topological insulator target to generate a plasma of the topological insulator, and depositing a plasma on the substrate to form a topological insulator film;
步骤 S3 ：控制沉积时间及 / 或沉积温度使拓扑绝缘体薄膜达到所需厚度。 Step S3: controlling the deposition time and/or the deposition temperature to achieve the desired thickness of the topological insulator film.
根据上述对拓扑绝缘体可饱和吸收镜的结构描述可知，在制备该拓扑绝缘体可饱和吸收镜时，可采用石英或碳化硅为基底材料，比如采用石英片或碳化硅片作为基底，同时，拓扑
绝缘体薄膜的材料包括碲化铋、
硒化铋及碲化锑中的任意一种。在具体实施时，可将拓扑绝缘体靶材及基底置于真空室中，采用激光脉冲沉积法将拓扑绝缘体靶材表面电离后形成等离子体，并使等离子体沉积到基底上，形成拓扑绝缘体薄膜。在沉积过程中，通过控制沉积时间或沉积温度等参数都能控制沉积的薄膜的厚度，当沉积的拓扑绝缘体薄膜厚度达到所需厚度时，即可停止沉积。
According to the above description of the structure of the topological insulator saturable absorption mirror, in the preparation of the topological insulator saturable absorption mirror, quartz or silicon carbide can be used as a base material, such as a quartz plate or a silicon carbide sheet as a substrate, and at the same time, the topology
The material of the insulator film includes bismuth telluride,
Any of selenium telluride and antimony telluride. In a specific implementation, the topological insulator target and the substrate may be placed in a vacuum chamber, and the surface of the topological insulator target is ionized by laser pulse deposition to form a plasma, and the plasma is deposited on the substrate to form a topological insulator film. During the deposition process, the thickness of the deposited film can be controlled by controlling parameters such as deposition time or deposition temperature, and deposition can be stopped when the thickness of the deposited topological insulator film reaches a desired thickness.
传统的半导体可饱和吸收镜采用化学气相沉积法制备，半导体材料需要层层生长，每层都需要精确控制，制备的半导体可饱和吸收镜带宽仅几十纳米。而本发明利用激光脉冲沉积的方法，制备过程简单，可大批量生产，一块拓扑绝缘体靶材可以制备上千块拓扑绝缘体可饱和吸收镜。同时，在沉积过程中，通过控制沉积的温度、时间等可以控制沉积的拓扑绝缘体薄膜的厚度和均匀性，从而可大批量生产，同时使制作的拓扑绝缘体可饱和吸收镜规格一致，制备出的拓扑绝缘体可饱和吸收镜带宽可从可见光拓展到红外甚至微波。
Conventional semiconductor saturable absorption mirrors are prepared by chemical vapor deposition. The semiconductor materials require layer growth, and each layer needs precise control. The prepared semiconductor saturable absorption mirror has a bandwidth of only several tens of nanometers. The invention adopts the method of laser pulse deposition, has simple preparation process and can be mass-produced, and a topological insulator target can prepare thousands of topological insulator saturable absorption mirrors. At the same time, during the deposition process, the thickness and uniformity of the deposited topological insulator film can be controlled by controlling the temperature and time of deposition, so that mass production can be carried out at the same time, and the topological insulator can be made to have the same specifications of the saturated absorption mirror. The topological insulator saturable absorption mirror bandwidth can be extended from visible light to infrared or even microwave.
如图 3 所示，本发明一实施例还提供了一种锁模光纤激光器，该激光器包括
半导体泵浦激光器1、光学耦合组件2、谐振腔3，半导体泵浦激光器1产生的泵浦光通过光学耦合组件2准直聚焦后耦合进入谐振腔3。谐振腔3包括上述任意一种拓扑绝缘体可饱和吸收镜6，拓扑绝缘体可饱和吸收镜6用于对谐振腔3产生的激光锁模。在本实施例中，谐振腔3还包括双色镜3、激光晶体4、第一激光高反射镜5、第二激光高反射镜7。双色镜是一种对一定波长的光几乎完全透过，而对另一些波长的光几乎完全反射的光学元件。在本实施例中，双色镜3对半导体泵浦激光器1产生的泵浦光高透过，而对激光晶体4产生的激光高反射。光学耦合组件2包含一凸透镜对，该凸透镜对包括两个凸透镜2，半导体泵浦激光器1产生的泵浦光通过光学耦合组件2中的凸透镜对准直聚焦后透过双色镜3进入激光晶体4产生激光，产生的激光可经双色镜3反射进入第一激光高反射镜5，再经第一激光高反射镜5反射到拓扑绝缘体可饱和吸收镜6进行锁模，锁模后的激光经原光路返回激光晶体4进行放大，经放大后的激光通过第二激光高反射镜7输出。锁模光纤激光器1还可包括棱镜对及输出镜9，棱镜对包括两个棱镜8。第二激光高反射镜7输出的激光经棱镜对压缩后再通过输出镜9输出。 As shown in FIG. 3, an embodiment of the present invention further provides a mode-locked fiber laser, where the laser includes
The semiconductor pump laser 1, the optical coupling component 2, the resonant cavity 3, and the pump light generated by the semiconductor pump laser 1 are collimated by the optical coupling assembly 2 and coupled into the resonant cavity 3. The resonant cavity 3 includes any of the above-described topological insulator saturable absorption mirrors 6, which are used for laser mode-locking of the resonant cavity 3. In the present embodiment, the resonant cavity 3 further includes a dichroic mirror 3, a laser crystal 4, a first laser high mirror 5, and a second laser high mirror 7. A two-color mirror is an optical element that transmits almost completely light of a certain wavelength and almost completely reflects light of other wavelengths. In the present embodiment, the dichroic mirror 3 transmits the pump light generated by the semiconductor pump laser 1 high, and the laser light generated by the laser crystal 4 is highly reflected. The optical coupling assembly 2 includes a pair of convex lenses including two convex lenses 2, and the pump light generated by the semiconductor pump laser 1 is directly focused by a convex lens in the optical coupling assembly 2 and then passed through the dichroic mirror 3 into the laser crystal 4 The laser light is generated, and the generated laser light can be reflected by the dichroic mirror 3 into the first laser high reflection mirror 5, and then reflected by the first laser high reflection mirror 5 to the topological insulator saturable absorption mirror 6 for clamping, and the laser after the mode locking passes through the original The optical path is returned to the laser crystal 4 for amplification, and the amplified laser light is output through the second laser high reflection mirror 7. The mode-locked fiber laser 1 can also include a prism pair and an output mirror 9, which includes two prisms 8. The laser light output from the second laser high mirror 7 is compressed by the prism pair and then output through the output mirror 9.
如图4所示，本发明另一实施例还提供了另一种锁模光纤激光器， 该激光器包括
半导体泵浦激光器1、光学耦合组件2、谐振腔3，谐振腔3包括上述任意一种拓扑绝缘体可饱和吸收镜6，拓扑绝缘体可饱和吸收镜6用于对谐振腔3产生的激光锁模。半导体泵浦激光器1产生的泵浦光通过光学耦合组件2准直聚焦后耦合进入谐振腔3。在本实施例中，光学耦合组件2包括准直器11、聚焦镜202、双色镜3，谐振腔3还包括双包层有源光纤10，凸透镜对，凸透镜对包括两个凸透镜2。半导体泵浦激光器1产生的泵浦光通过光学耦合组件2准直聚焦后耦合进入双包层有源光纤10产生激光，产生的激光经凸透镜对准直聚焦到拓扑绝缘体可饱和吸收镜6进行锁模，锁模后的激光经原光路返回双包层有源光纤10进行放大，经放大后的激光通过双包层有源光纤10输出。 As shown in FIG. 4, another embodiment of the present invention further provides another mode-locked fiber laser, the laser including
The semiconductor pump laser 1, the optical coupling component 2, the resonant cavity 3, and the resonant cavity 3 include any of the above-described topological insulator saturable absorption mirrors 6, and the topological insulator saturable absorption mirror 6 is used for laser mode-locking of the resonant cavity 3. The pump light generated by the semiconductor pump laser 1 is collimated by the optical coupling assembly 2 and coupled into the cavity 3. In the present embodiment, the optical coupling assembly 2 includes a collimator 11, a focusing mirror 202, and a dichroic mirror 3. The resonant cavity 3 further includes a double-clad active optical fiber 10, a pair of convex lenses, and the pair of convex lenses includes two convex lenses 2. The pump light generated by the semiconductor pump laser 1 is collimated by the optical coupling component 2 and coupled into the double-clad active fiber 10 to generate a laser, and the generated laser is directly focused by a convex lens to the topological insulator saturable absorption mirror 6 for locking. The mold, the mode-locked laser light is returned to the double-clad active optical fiber 10 through the original optical path for amplification, and the amplified laser light is output through the double-clad active optical fiber 10.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. Within the scope.
Claims (10)
- 一种拓扑绝缘体可饱和吸收镜，其特征在于，包括基底及镀在所述基底上的拓扑绝缘体薄膜。A topological insulator saturable absorber mirror comprising a substrate and a topological insulator film plated on the substrate.
- 如权利要求1所述的拓扑绝缘体可饱和吸收镜，其特征在于，所述基底为石英或碳化硅。The topological insulator saturable absorber of claim 1 wherein the substrate is quartz or silicon carbide.
- 如权利要求1所述的拓扑绝缘体可饱和吸收镜，其特征在于，所述拓扑绝缘体薄膜的材料包括碲化铋、硒化铋及碲化锑中的任意一种。The topological insulator saturable absorption mirror according to claim 1, wherein the material of the topological insulator film comprises any one of bismuth telluride, bismuth selenide and tellurium telluride.
- 一种 拓扑绝缘体可饱和吸收镜 的制备方法，其特征在于，包括如下步骤：A method for preparing a topological insulator saturable absorption mirror, comprising the steps of:将基底及拓扑绝缘体靶材置于真空室；Placing the substrate and the topological insulator target in a vacuum chamber;将所述拓扑绝缘体靶材表面电离化，产生所述拓扑绝缘体的等离子体，所述等离子体沉积在所述基底上形成拓扑绝缘体薄膜；Ionizing the surface of the topological insulator target to generate a plasma of the topological insulator, the plasma depositing a topological insulator film on the substrate;控制沉积时间及/或沉积温度使所述拓扑绝缘体薄膜达到所需厚度。Controlling the deposition time and/or deposition temperature causes the topological insulator film to achieve a desired thickness.
- 如权利要求4所述的拓扑绝缘体可饱和吸收镜的制备方法，其特征在于，所述基底为石英或碳化硅。The method of preparing a topological insulator saturable absorption mirror according to claim 4, wherein the substrate is quartz or silicon carbide.
- 如权利要求4所述的拓扑绝缘体可饱和吸收镜的制备方法，其特征在于，所述拓扑绝缘体薄膜的材料包括碲化铋、硒化铋及碲化锑中的任意一种。The method for preparing a topological insulator saturable absorption mirror according to claim 4, wherein the material of the topological insulator film comprises any one of antimony telluride, antimony selenide and antimony telluride.
- 一种锁模光纤激光器，其特征在于，包括半导体泵浦激光器、光学耦合组件、谐振腔；所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后耦合进入所述谐振腔；所述谐振腔包括权利要求1至3中任一权利要求所述的拓扑绝缘体可饱和吸收镜，所述拓扑绝缘体可饱和吸收镜用于对所述谐振腔产生的激光锁模。A mode-locked fiber laser characterized by comprising a semiconductor pump laser, an optical coupling component, and a resonant cavity; the pump light generated by the semiconductor pump laser is collimated by the optical coupling component and coupled into the resonance The cavity includes a topological insulator saturable absorber mirror according to any one of claims 1 to 3, the topological insulator saturable absorber mirror for laser mode-locking of the cavity.
- 如权利要求7所述的锁模光纤激光器，其特征在于，所述谐振腔还包括：The mode-locked fiber laser according to claim 7, wherein the resonant cavity further comprises:双色镜、激光晶体、第一激光高反射镜、第二激光高反射镜；Two-color mirror, laser crystal, first laser high mirror, second laser high mirror;所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后透过所述双色镜进入所述激光晶体产生激光，产生的激光可经所述双色镜反射进入所述第一激光高反射镜，再经所述第一激光高反射镜反射到所述拓扑绝缘体可饱和吸收镜进行锁模，锁模后的激光经原光路返回所述激光晶体进行放大；经放大后的激光通过所述第二激光高反射镜输出。The pump light generated by the semiconductor pump laser is collimated by the optical coupling component, and then enters the laser crystal through the dichroic mirror to generate laser light, and the generated laser light can be reflected into the first through the dichroic mirror. The laser high reflection mirror is further reflected by the first laser high reflection mirror to the topological insulator saturable absorption mirror for clamping, and the clamped laser light is returned to the laser crystal through the original optical path for amplification; the amplified laser Output by the second laser high mirror.
- 如权利要求8所述的锁模光纤激光器，其特征在于，还包括棱镜对及输出镜；所述第二激光高反射镜输出的激光经所述棱镜对压缩后再通过所述输出镜输出。The mode-locked fiber laser according to claim 8, further comprising a prism pair and an output mirror; wherein the laser light output by the second laser high mirror is compressed by the prism pair and then output through the output mirror.
- 如权利要求7所述的锁模光纤激光器，其特征在于，所述谐振腔还包括双包层有源光纤、凸透镜对；所述半导体泵浦激光器产生的泵浦光通过所述光学耦合组件准直聚焦后耦合进入所述双包层有源光纤产生激光；产生的激光经所述凸透镜对准直聚焦到所述拓扑绝缘体可饱和吸收镜进行锁模，锁模后的激光经原光路返回所述双包层有源光纤进行放大；经放大后的激光通过所述双包层有源光纤输出。The mode-locked fiber laser according to claim 7, wherein the resonant cavity further comprises a double-clad active fiber, a pair of convex lenses; and the pump light generated by the semiconductor pump laser passes through the optical coupling component Directly focusing and coupling into the double-clad active fiber to generate laser light; the generated laser light is directly focused by the convex lens to the topological insulator saturable absorption mirror for clamping, and the mode-locked laser is returned through the original optical path. The double-clad active fiber is amplified; the amplified laser is output through the double-clad active fiber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410803388.9A CN104466647B (en) | 2014-12-19 | 2014-12-19 | Topological insulator saturable absorbing mirror and preparation method thereof |
| CN201410803388.9 | 2014-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016095858A1 true WO2016095858A1 (en) | 2016-06-23 |
Family
ID=52912257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2015/097917 WO2016095858A1 (en) | 2014-12-19 | 2015-12-18 | Topological insulator saturable absorber mirror and fabricating method therefor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104466647B (en) |
| WO (1) | WO2016095858A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10371910B2 (en) | 2017-12-22 | 2019-08-06 | At&T Intellectual Property I, L.P. | Optical communications cables utilizing topological insulators as optical fiber cores |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466647B (en) * | 2014-12-19 | 2018-04-24 | 深圳大学 | Topological insulator saturable absorbing mirror and preparation method thereof |
| WO2017214925A1 (en) * | 2016-06-16 | 2017-12-21 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method therefor, and pulse optical fibre laser |
| CN105896258A (en) * | 2016-06-16 | 2016-08-24 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser |
| CN105896253A (en) * | 2016-06-17 | 2016-08-24 | 中国工程物理研究院激光聚变研究中心 | Optical fiber device and laser system |
| CN111525374A (en) * | 2020-04-28 | 2020-08-11 | 中国人民解放军国防科技大学 | Broadband wavelength-adjustable laser pulse signal generating device and fiber laser |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060092995A1 (en) * | 2004-11-01 | 2006-05-04 | Chromaplex, Inc. | High-power mode-locked laser system |
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN103526297A (en) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | Method for preparing topological insulator Bi2Se3 film |
| CN104466647A (en) * | 2014-12-19 | 2015-03-25 | 深圳大学 | Topological insulator saturable absorption mirror and manufacturing method thereof |
| CN204391485U (en) * | 2014-12-19 | 2015-06-10 | 深圳大学 | Topological insulator saturable absorbing mirror and mode locked fiber laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434873A (en) * | 1994-05-12 | 1995-07-18 | University Of Central Florida | Self starting femtosecond Ti Sapphire laser with intracavity multiquantum well saturable absorber |
| US5987049A (en) * | 1998-04-24 | 1999-11-16 | Time-Bandwidth Products Ag | Mode locked solid-state laser pumped by a non-diffraction-limited pumping source and method for generating pulsed laser radiation by pumping with a non-diffraction-limited pumping beam |
| CN103242704A (en) * | 2013-04-22 | 2013-08-14 | 王枫秋 | Saturated absorption composite material ink, preparation method and optical fiber laser based on ink |
| CN103882383B (en) * | 2014-01-03 | 2016-01-20 | 华东师范大学 | A kind of pulsed laser deposition prepares Sb 2te 3the method of film |
| CN203871646U (en) * | 2014-01-23 | 2014-10-08 | 中国电子科技集团公司第十一研究所 | Pulse width tunable passive mode locking laser |
| CN103972773A (en) * | 2014-05-16 | 2014-08-06 | 厦门大学 | Passively-Q-switched fiber laser based on topological insulator |
-
2014
- 2014-12-19 CN CN201410803388.9A patent/CN104466647B/en active Active
-
2015
- 2015-12-18 WO PCT/CN2015/097917 patent/WO2016095858A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060092995A1 (en) * | 2004-11-01 | 2006-05-04 | Chromaplex, Inc. | High-power mode-locked laser system |
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN103526297A (en) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | Method for preparing topological insulator Bi2Se3 film |
| CN104466647A (en) * | 2014-12-19 | 2015-03-25 | 深圳大学 | Topological insulator saturable absorption mirror and manufacturing method thereof |
| CN204391485U (en) * | 2014-12-19 | 2015-06-10 | 深圳大学 | Topological insulator saturable absorbing mirror and mode locked fiber laser |
Non-Patent Citations (2)
| Title |
|---|
| YANG, PENGHUI ET AL.: "Influence of Substrate Temperature on Growth of RF Sputtered Bismuth Telluride Films", CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, vol. 32, no. 6, 30 June 2012 (2012-06-30), pages 504 * |
| ZHAO, JIAN ET AL.: "SESAM-Based Passively Q-Switched Mode-Locked Ytterbium Doped Large-Mode-Area Fiber Lasers", PROCEEDINGS OF 2010 OPTICAL CONFERENCE OF THE CHINESE OPTICAL SOCIETY, 31 December 2010 (2010-12-31), pages 1 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10371910B2 (en) | 2017-12-22 | 2019-08-06 | At&T Intellectual Property I, L.P. | Optical communications cables utilizing topological insulators as optical fiber cores |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104466647B (en) | 2018-04-24 |
| CN104466647A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2016095858A1 (en) | Topological insulator saturable absorber mirror and fabricating method therefor | |
| WO2017063293A1 (en) | Transition metal sulfide saturable absorber mirror and mode-locked fiber laser | |
| WO2017214925A1 (en) | Two-dimensional semiconductor saturable absorber mirror and preparation method therefor, and pulse optical fibre laser | |
| JP2006309222A (en) | Optical waveguide comprising quantum dot waveguide layer and manufacturing method therefor | |
| JPS61169803A (en) | Accumulation or crystallization of organic substance thin layer by energy flux | |
| Zhou et al. | Fabrication of microlens array on chalcogenide glass by wet etching-assisted femtosecond laser direct writing | |
| CN205846435U (en) | Two-dimensional semiconductor saturable absorbing mirror, pulse optical fiber | |
| CN109980491A (en) | Saturable absorption preparation, saturable absorber and mode-locked laser | |
| CN112310804A (en) | VCSEL structure with phase compensation layer and preparation method | |
| CN110346931B (en) | Deterministic quantum light source device based on gold reflecting layer combined with micro lens and preparation method and application thereof | |
| CN112751256B (en) | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber | |
| WO2017206137A1 (en) | Heterojunction saturable absorber mirror and method for preparing same, and mode-locked fiber laser | |
| CN103368058A (en) | Saturable absorber mirror based on graphene and manufacturing method thereof | |
| JPH05326402A (en) | Manufacture of semiconductor device | |
| JP4514964B2 (en) | Method for forming optical silicon layer on substrate and method for producing optical material by the method | |
| El‐Kader et al. | Formation of luminescent silicon by laser annealing of a‐Si: H | |
| CN114361928A (en) | Practical saturable absorber based on germanium material with thickness of several atomic layers and preparation method thereof | |
| WO2018205086A1 (en) | Two-dimensional material heterojunction saturable absorption mirror and preparation method therefor | |
| CN103320753A (en) | Preparation method of aluminum nano-particles array with controllable size and density | |
| CN106972344B (en) | Edge-emitting semiconductor laser device and manufacturing method thereof | |
| JP2004310009A (en) | Structure body for optics, method of manufacturing the same, and optical element | |
| Sugimura et al. | Selective area deposition of silicon‐nitride and silicon‐oxide by laser chemical vapor deposition and fabrication of microlenses | |
| WO2020062214A1 (en) | Waveguide integrated optical modulator and preparation method therefor | |
| CN205016829U (en) | Transition metal sulphide saturable absorbs mirror and mode locking fiber laser | |
| CN109149333A (en) | A kind of waveguide integrating optical modulator and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15869365 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 15869365 Country of ref document: EP Kind code of ref document: A1 |