CN103972773A - Passively-Q-switched fiber laser based on topological insulator - Google Patents
Passively-Q-switched fiber laser based on topological insulator Download PDFInfo
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- CN103972773A CN103972773A CN201410210066.3A CN201410210066A CN103972773A CN 103972773 A CN103972773 A CN 103972773A CN 201410210066 A CN201410210066 A CN 201410210066A CN 103972773 A CN103972773 A CN 103972773A
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- wavelength division
- isolator
- division multiplexer
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Abstract
The invention relates to a fiber laser, in particular to a passively-Q-switched fiber laser based on a topological insulator. The passively-Q-switched fiber laser based on the topological insulator is provided with a pumping source, a wavelength division multiplexer, an erbium-doped fiber, a coupler, an isolator, a polarization controller and a Bi2Se3 nanosheet saturable absorber. The wavelength division multiplexer, the erbium-doped fiber, the coupler, the isolator, the polarization controller and the Bi2Se3 nanosheet saturable absorber form an annular cavity. The pumping source is connected the pumping source input end of the wavelength division multiplexer, the public end of the wavelength division multiplexer is connected with one end of the erbium-doped fiber, the other end of the erbium-doped fiber is connected with the coupler, one end of the coupler serves as the pulse laser output end, the other end of the coupler is connected with the input end of the isolator, the output end of the isolator is connected with the polarization controller, the polarization controller is connected with the Bi2Se3 nanosheet saturable absorber, and the Bi2Se3 nanosheet saturable absorber serves as a laser passively-Q-switched device, and is connected with the wavelength division multiplexer.
Description
Technical field
The present invention relates to fiber laser, especially relate to a kind of passive Q-adjusted fiber laser based on topological insulator.
Background technology
As a kind of novel dirac material, the topology insulator electrical and optical properties Reviews of Modern Physics outstanding because its unique band structure possesses, 2010,82,3045-3067, and be applied to very soon many Disciplinary Frontiers, as superconductor Nature Communication, 2012,3,1056 and ultrafast laser Nonlinear Photonics, 2012:Optical Society of America; Applied Physics Letters, 2012,101:211106.At present, its optical application mainly concentrates on pulse optical fiber.Passive Q-adjusted fiber laser has the feature Applied Physics Letters such as pulse energy is large, simple in structure, flexible design, and 1999,74,3619, be widely used in the fields such as materials processing, laser ranging, biological medicine, optical fiber communication, remote sensing.And the key factor of obtaining of the passive Q-adjusted fiber laser of high-performance is high-quality saturable absorber.Topology insulator is because its large modulation depth, the wide feature such as saturable absorption spectral region, excellent thermal diffusivity are considered to the outstanding saturable absorber of a new generation, especially topological insulator, it has lower saturable threshold value, nonlinear loss etc. with respect to body material, and there is better saturable absorption characteristic, therefore exploitation is a kind of based on Bi
2se
3new type of passive adjust Q erbium doped fiber laser very important.
Summary of the invention
The object of the present invention is to provide a kind of passive Q-adjusted fiber laser based on topological insulator.
The present invention is provided with pumping source, wavelength division multiplexer, Er-doped fiber, coupler, isolator, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber; Described wavelength division multiplexer, Er-doped fiber, coupler, isolator, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber looping chamber, described pumping source connects the pumping source input of wavelength division multiplexer; The common port of wavelength division multiplexer connects one end of Er-doped fiber, the other end butt coupling device of Er-doped fiber, one end of coupler is as pulse laser output, the other end of coupler connects isolator input, isolator ensures annular chamber inner laser unidirectional operation, isolator output connects Polarization Controller, and Polarization Controller is used for regulating annular endovenous laser polarization, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber is connected, Bi
2se
3nanometer sheet saturable absorber is as the passive Q-adjusted device of laser, Bi
2se
3nanometer sheet saturable absorber is connected with wavelength division multiplexer.
The present invention utilizes under 1-METHYLPYRROLIDONE NMP booster action, directly peels off bismuth selenide body Bi by simple ultrasonic method
2se
3material is prepared Bi
2se
3nanometer sheet.With Bi
2se
3build a kind of passive Q-adjusted erbium doped fiber laser with low threshold value and the tunable pulse repetition frequency of wide region as saturable absorber.
The present invention has following outstanding advantages:
1, the present invention adopts Bi
2se
3nanometer sheet is passive Q-adjusted for fiber laser as saturable absorber, due to Bi
2se
3the threshold level of nanometer sheet saturable absorption is low, and recovery time is fast, therefore based on Bi
2se
3the passive Q-adjusted erbium doped fiber laser of nanometer sheet can be realized the laser pulse output of high stability, high repetition frequency, high pulse energy;
2, the present invention adopts Bi
2se
3nanometer sheet is passive Q-adjusted for fiber laser as saturable absorber, because preparation process is simple, have that modulation depth is large, saturable absorption spectral region is wide and the advantage such as thermal diffusivity is good, is therefore easy to and commercial application.
Brief description of the drawings
Fig. 1 is the structure composition schematic diagram of the embodiment of the present invention.
Fig. 2 is Bi in the embodiment of the present invention
2se
3the nonlinear optical absorption of nanometer sheet.
Fig. 3 is typical Q impulse sequence chart in the embodiment of the present invention.
Fig. 4 is individual pulse envelope diagram in the embodiment of the present invention.
Fig. 5 is typical light spectrogram in the embodiment of the present invention.
Fig. 6 is embodiment of the present invention intermediate frequency spectrogram.
Fig. 7 is single pulse energy and adjust Q repetition rate with pump power change curve in the embodiment of the present invention.
Fig. 8 be in the embodiment of the present invention pulse duration and pulse peak power with pump power change curve.
Embodiment
The present invention is further illustrated in connection with accompanying drawing for following specific embodiment.
Embodiment 1Bi
2se
3the detection of the nonlinear optical absorption of nanometer sheet.
Adopt spin-coating method, NMP is peeled off to Bi
2se
3the Bi that body material obtains
2se
3nanometer sheet is applied on quartz plate, measures its non-linear absorption.Adopt femto second titanium sapphire laser to measure its saturable absorption characteristic, can obtain its modulation depth is 3.8%, by curve, further show that its saturable absorption intensity is 53MW/cm
2.
The structure of embodiment 2 passive Q-adjusted erbium doped fiber lasers.
As shown in Figure 1, the pumping source 1 that centre wavelength is 974nm connects the pumping input of 980/1550 wavelength division multiplexer 2; The common port of 980/1550 wavelength division multiplexer 2 connects one end of the long doped fiber 3 of 4.1m, the common port of the other end butt coupling device 4 of doped fiber 3,10% output of coupler 4 is used for output Q-switched pulse laser, 90% output of coupler 4 connects isolator 5 inputs, isolator 5 ensures that endovenous laser is counterclockwise unidirectional operation, isolator 5 outputs connect Polarization Controller 6, and Polarization Controller 6 is used for adjusting endovenous laser polarization state, and Polarization Controller 6 other ends connect Bi
2se
3nanometer sheet saturable absorber 7, its method, for adopting photo-induction inducing defecation by enema and suppository that topological insulator is adsorbed on to fiber end face, in conjunction with ring flange, forms the Bi of sandwich structure
2se
3nanometer sheet saturable absorber 7, Bi
2se
3the other end of nanometer sheet saturable absorber 7 connects the signal end of wavelength division multiplexer 2.Wavelength division multiplexer 2, doped fiber 3, coupler 4, isolator 5, Polarization Controller 6, Bi
2se
3nanometer sheet saturable absorber 7 is looping cavity configuration together, realizes passive Q regulation pulse laser, and pulse laser is by 10% output terminals A output of coupler 4.
Embodiment 3 is based on bismuth selenide Bi
2se
3the passive Q-adjusted erbium doped fiber laser of nanometer sheet produces laser pulse.
As illustrated in fig. 1 and 2, the tune Q threshold value of the embodiment of the present invention is only 9.3mW, and this has benefited from Bi
2se
3lower nonlinear loss.In the time that pump power is 87.2mW, its typical pulse train as shown in Figure 3, the minimum <5% of the time jitter of Q impulse, repetition rate is 23.8KHz; Figure 4 shows that single Q impulse, can learn, its pulsewidth is 5.4 μ s; As shown in Figure 5, the centre wavelength of laser is 1530nm to exemplary spectrum under this tune Q state; Figure 6 shows that the frequency spectrum of this Q-switch laser, its signal to noise ratio, up to 50dB, has shown the steady running of laser Q-switching.Analysis chart 7 and 8 is known, single pulse energy and pulse peak power are linear with the increase of pump power to be increased and is tending towards saturated, the variation tendency of pulsewidth in contrast, the repetition rate of Q impulse is to increase and monotone increasing with pump power, and can see from Fig. 7 and 8, obtain maximum single pulse energy and the narrowest pulsewidth be respectively 39.8nJ and 4.9 μ s, repetition rate at 6.2KHz to adjustable continuously between 40.1KHz.
Claims (1)
1. the passive Q-adjusted fiber laser based on topological insulator, is characterized in that being provided with pumping source, wavelength division multiplexer, Er-doped fiber, coupler, isolator, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber; Described wavelength division multiplexer, Er-doped fiber, coupler, isolator, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber looping chamber, described pumping source connects the pumping source input of wavelength division multiplexer; The common port of wavelength division multiplexer connects one end of Er-doped fiber, the other end butt coupling device of Er-doped fiber, one end of coupler is as pulse laser output, the other end of coupler connects isolator input, isolator ensures annular chamber inner laser unidirectional operation, isolator output connects Polarization Controller, and Polarization Controller is used for regulating annular endovenous laser polarization, Polarization Controller and Bi
2se
3nanometer sheet saturable absorber is connected, Bi
2se
3nanometer sheet saturable absorber is as the passive Q-adjusted device of laser, Bi
2se
3nanometer sheet saturable absorber is connected with wavelength division multiplexer.
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| CN201410210066.3A CN103972773A (en) | 2014-05-16 | 2014-05-16 | Passively-Q-switched fiber laser based on topological insulator |
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| CN201410210066.3A CN103972773A (en) | 2014-05-16 | 2014-05-16 | Passively-Q-switched fiber laser based on topological insulator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377539A (en) * | 2014-11-28 | 2015-02-25 | 深圳大学 | Evanescent wave mode-locked absorber device and manufacturing method thereof |
| CN104377541A (en) * | 2014-11-19 | 2015-02-25 | 山东理工大学 | Multi-wavelength tunable Q-switched optical laser |
| CN104466647A (en) * | 2014-12-19 | 2015-03-25 | 深圳大学 | Topological insulator saturable absorption mirror and manufacturing method thereof |
| CN104716555A (en) * | 2015-04-10 | 2015-06-17 | 湖南大学 | Passive mode-locking thulium-doped optical fiber laser device based on topology insulator |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
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| CN103242704A (en) * | 2013-04-22 | 2013-08-14 | 王枫秋 | Saturated absorption composite material ink, preparation method and optical fiber laser based on ink |
| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN103701022A (en) * | 2013-12-19 | 2014-04-02 | 北京工业大学 | Double-resonant-cavity all-optical-fiber mode-locked pulse laser |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN103242704A (en) * | 2013-04-22 | 2013-08-14 | 王枫秋 | Saturated absorption composite material ink, preparation method and optical fiber laser based on ink |
| CN103701022A (en) * | 2013-12-19 | 2014-04-02 | 北京工业大学 | Double-resonant-cavity all-optical-fiber mode-locked pulse laser |
Non-Patent Citations (1)
| Title |
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| ZHENGQIAN LUO等: "1.06μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi2Se3 as a saturable absorber", 《OPTICS EXPRESS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377541A (en) * | 2014-11-19 | 2015-02-25 | 山东理工大学 | Multi-wavelength tunable Q-switched optical laser |
| CN104377541B (en) * | 2014-11-19 | 2017-10-27 | 山东理工大学 | Multi-wavelength tunable Q adjusting optical fiber laser |
| CN104377539A (en) * | 2014-11-28 | 2015-02-25 | 深圳大学 | Evanescent wave mode-locked absorber device and manufacturing method thereof |
| CN104466647A (en) * | 2014-12-19 | 2015-03-25 | 深圳大学 | Topological insulator saturable absorption mirror and manufacturing method thereof |
| CN104466647B (en) * | 2014-12-19 | 2018-04-24 | 深圳大学 | Topological insulator saturable absorbing mirror and preparation method thereof |
| CN104716555A (en) * | 2015-04-10 | 2015-06-17 | 湖南大学 | Passive mode-locking thulium-doped optical fiber laser device based on topology insulator |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
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Application publication date: 20140806 |