WO2016006444A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2016006444A1
WO2016006444A1 PCT/JP2015/068170 JP2015068170W WO2016006444A1 WO 2016006444 A1 WO2016006444 A1 WO 2016006444A1 JP 2015068170 W JP2015068170 W JP 2015068170W WO 2016006444 A1 WO2016006444 A1 WO 2016006444A1
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Prior art keywords
light
light emitting
phosphor
emitting element
emitting device
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PCT/JP2015/068170
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English (en)
Japanese (ja)
Inventor
幡　俊雄
昌嗣 増田
北野　雅陽
小野　高志
宏彰 大沼
清史 長田
順史 稲田
豊徳 植村
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シャープ株式会社
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Publication of WO2016006444A1 publication Critical patent/WO2016006444A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/54—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to a light emitting device (Light Emitting Diode) used for a backlight light source of an LCD (Liquid Crystal Display). More specifically, the present invention relates to a light emitting device that includes a light emitting element and a phosphor excited by the light emitting element and can generate bright white light with excellent color reproducibility.
  • a light emitting device Light Emitting Diode
  • LCD Liquid Crystal Display
  • FIG. 7 is a cross-sectional view of a light emitting device 900 described in Patent Document 1 (Japanese Patent Laid-Open No. 2011-249807).
  • Patent Document 1 describes the following.
  • the barrier region 901 is divided into a first region 910 and a second region 920.
  • a first resin layer 940 that covers the first light emitting diode 930 is formed in the first region 910, and a second resin layer 960 that covers the second light emitting diode 950 is formed in the second region 920.
  • the first light emitting diode 930 is a blue LED chip
  • the second light emitting diode 950 is a UV (ultra violet) -LED chip.
  • a red phosphor is added to the first resin layer 940, and a green phosphor is added to the second resin layer 960.
  • the light emitting device 900 can emit blue light, red light, and green light.
  • Patent Document 2 Japanese Patent Laid-Open No. 2013-179273
  • Patent Document 3 Japanese Patent Laid-Open No. 2013-12613 disclose a side view type light emitting device (side light emitting device) on which at least two light emitting elements are mounted. Device).
  • the light-emitting device of the present invention emits light having an emission peak wavelength in the wavelength range of 430 nm to 480 nm, and an ultraviolet or violet light emitting element that emits light having an emission peak wavelength in the wavelength range of 360 nm to 430 nm.
  • a first red phosphor that is excited by the emitted light and generates light having a fluorescence peak wavelength in a wavelength range of 600 nm to 670 nm.
  • the first green phosphor is preferably SrGa 2 S 4 : Eu, (R1) Mg 2 Al 16 O 27 : Eu, Mn ((R1) represents at least one of Sr and Ba), ( R2) MgAl 10 O 17 : Eu, Mn ((R2) represents at least one of Sr and Ba), ZnS: Cu, SrAl 2 O 4 : Eu, SrAl 2 O 4 : Eu, Dy, ZnO : Zn, Zn 2 Ge 2 O 4: Mn, Zn 2 SiO 4: Mn, and, (R3) 3 MgSi 2 O 8: Eu, Mn ((R3) , at least one of Sr, Ba and Ca At least one of
  • the light-emitting device of the present invention is preferably a second green phosphor that is excited by light emitted from at least ultraviolet or violet light-emitting elements and generates light having a fluorescence peak wavelength on the longer wavelength side than the first green phosphor. Is further provided.
  • the first red phosphor preferably, the general formula (M1) 2 ((M2) 1-y Mn y) X 6 ((M1) is at least one alkali metal of Li, Na, K, Rb and Cs (M2) represents at least one tetravalent metal element of Ge, Si, Sn, Ti, and Zr, y satisfies 0.001 ⁇ y ⁇ 0.2, and X represents F, Cl And represents a halogen element of at least one of Br) and a Mn 4+ activated halide phosphor.
  • (M1) is at least one alkali metal of Li, Na, K, Rb and Cs
  • M2 represents at least one tetravalent metal element of Ge, Si, Sn, Ti, and Zr
  • y satisfies 0.001 ⁇ y ⁇ 0.2
  • X represents F, Cl And represents a halogen element of at least one of Br) and a Mn 4+ activated halide phosphor.
  • the light emitting device of the present invention preferably further includes a second red phosphor.
  • the second red phosphor is preferably CaAlSiN 3 : Eu, (Sr ⁇ Ca) AlSiN 3 : Eu, (M3) S: Eu ((M3) is divalent at least one of Ca, Sr and Ba) And (M4) 2 Si 5 N 8 : Eu ((M4) represents at least one divalent metal element of Ca, Sr and Ba). It is.
  • the light emitting device of the present invention can generate bright white light with excellent color reproducibility.
  • FIG. 1A is a plan view of a light emitting device according to an embodiment of the present invention
  • FIG. 1B is a cross-sectional view taken along the line IB-IB shown in FIG. It is a graph which shows the emission spectrum of the light-emitting device of one Embodiment of this invention. It is sectional drawing of the light-emitting device of one Embodiment of this invention.
  • (A) And (b) is sectional drawing which shows a part of manufacturing method of the light-emitting device of one Embodiment of this invention to process order.
  • (A) is a top view of the light-emitting device of one Embodiment of this invention
  • (b) is sectional drawing in the VB-VB line
  • FIG. 1 is a top view of the light-emitting device of one Embodiment of this invention
  • (b) is sectional drawing in the VIB-VIB line
  • FIG. 1A is a plan view of the light emitting device according to the first embodiment of the present invention
  • FIG. 1B is a cross-sectional view taken along the line IB-IB shown in FIG.
  • FIG. 2 is a graph showing an emission spectrum of an example (Example 1 described later) of the light emitting device according to the present embodiment.
  • the light emitting device 100 of this embodiment includes an ultraviolet or violet light emitting element 10, a blue light emitting element 20, a sealing resin 30, a first green phosphor 41, and a first red phosphor 51.
  • the ultraviolet or violet light-emitting element 10 emits light (ultraviolet or violet light) having an emission peak wavelength within a wavelength range of 360 nm or more and 430 nm or less.
  • the blue light emitting element 20 emits light (blue light) having an emission peak wavelength within a wavelength range of 430 nm or more and 480 nm or less.
  • the first green phosphor 41 is excited by light emitted from at least ultraviolet light or the violet light emitting element 10, and generates light having a fluorescence peak wavelength within a wavelength range of 500 nm or more and 580 nm or less.
  • the first red phosphor 51 is excited by at least light emitted from the blue light emitting element 20 and generates light having a fluorescence peak wavelength within a wavelength range of 600 nm to 670 nm.
  • the light emitting device 100 bright white light having excellent color reproducibility is obtained by combining the blue light from the blue light emitting element 20, the green light from the first green phosphor 41, and the red light from the first red phosphor 51. Can be obtained (eg FIG. 2). Therefore, if the light emitting device 100 is used as a backlight light source for an LCD, a bright image with excellent color reproducibility can be obtained.
  • the light emitting device 100 further includes a base 101, a reflecting surface 103, a first inner lead 105A, a second inner lead 105B, a first outer lead 107A, and a second outer lead 107B.
  • a recess is formed on the upper surface of the substrate 101, and the side surface of the recess functions as the reflection surface 103.
  • the first inner lead 105A is provided on a part of the bottom surface of the recess and is connected to the first outer lead 107A.
  • the second inner lead 105B is provided on another part of the bottom surface of the recess, and is connected to the second outer lead 107B.
  • the ultraviolet or purple light emitting element 10 is fixed on the first inner lead 105A via an adhesive (for example, a silicone adhesive such as phenyl silicone adhesive), and on the second inner lead 105B,
  • the blue light emitting element 20 is fixed via an adhesive (for example, a silicone adhesive such as phenyl silicone adhesive).
  • a p-side electrode and an n-side electrode are provided on the upper surface of the ultraviolet or violet light-emitting element 10, and a p-side electrode and an n-side electrode are provided on the upper surface of the blue light-emitting element 20.
  • the bonding wire 15 is used to connect the n-side electrode of the ultraviolet or violet light emitting element 10 and the first inner lead 105A.
  • the p-side electrode of the ultraviolet or violet light emitting element 10 and the n-side electrode of the blue light emitting element 20 are connected to each other. Are connected, and the p-side electrode of the blue light emitting element 20 and the second inner lead 105B are connected.
  • the p-side electrode and the n-side electrode may be provided to face the upper surface and the lower surface, and the ultraviolet or violet light emitting element 10 is configured to be flip-chip mountable. Also good. Further, a zener diode may be connected in parallel to the ultraviolet or violet light emitting element 10. The same can be said for the blue light emitting element 20. The ultraviolet or purple light emitting element 10 and the blue light emitting element 20 may be connected in parallel.
  • a sealing member is provided in the recess of the base 101.
  • the sealing member includes a sealing resin 30, a first green phosphor 41, and a first red phosphor 51.
  • the sealing resin 30 has a high transmittance (preferably 70) with respect to all of blue light from the blue light emitting element 20, green light from the first green phosphor 41, and red light from the first red phosphor 51. % Or more, more preferably 80% or more, and still more preferably 90% or more).
  • a silicone resin can be used.
  • the sealing member may not include the sealing resin 30 and may include only the first green phosphor 41 and the first red phosphor 51.
  • the sealing resin 30 may contain at least one of SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3, and Y 2 O 3 as long as the effects of the present embodiment are not impaired.
  • the first green phosphor 41 is not particularly limited as long as it does not contradict the object of the present invention, but preferably contains (Ba, Sr) MgAl 10 O 17 : Eu 2+ , Mn 2+ .
  • SrGa 2 S 4 Eu
  • (R1) Mg 2 Al 16 O 27 Eu
  • Mn ((R1) represents at least one of Sr and Ba.
  • these materials may be used alone, or two or more of these materials may be mixed and used.
  • the volume-based median diameter of the first green phosphor 41 is preferably 20 ⁇ m or less. Thereby, it can prevent that the light transmittance of the 1st green fluorescent substance 41 is impaired. Moreover, since the specific surface area of the first green phosphor 41 is increased, the fluorescence efficiency of the first green phosphor 41 is improved. “Volume-based median diameter of the first green phosphor 41” means a median diameter when the particle size distribution of the first green phosphor 41 is measured on a volume basis. For example, using a flow particle image analyzer or the like. Measured. The content of the first green phosphor 41 is not particularly limited.
  • the first red phosphor 51 is not particularly limited as long as it does not contradict the object of the present invention, but preferably contains a Mn 4+ activated halide phosphor.
  • the fluorescence peak wavelength of the Mn 4+ activated halide phosphor is in the wavelength range of 625 nm or more and 645 nm or less (eg, 635 nm), and the spectrum width of the fluorescence peak is about 20 nm.
  • the light-emitting device 100 can be suitably used as a light-emitting device for display applications (for example, a backlight light source for LCD).
  • the Mn 4+ activated halide phosphor is inferior in the blue light absorption efficiency as compared with a conventional red phosphor (for example, CaAlSiN 3 : Eu or (Sr ⁇ Ca) AlSiN 3 : Eu). Therefore, by increasing than when the content of Mn 4+ -activated halide phosphor using a conventional red phosphor, the fluorescence intensity caused by using the Mn 4+ -activated halide phosphor ( It is preferable to prevent a decrease in the intensity of red light.
  • a conventional red phosphor for example, CaAlSiN 3 : Eu or (Sr ⁇ Ca) AlSiN 3 : Eu. Therefore, by increasing than when the content of Mn 4+ -activated halide phosphor using a conventional red phosphor, the fluorescence intensity caused by using the Mn 4+ -activated halide phosphor ( It is preferable to prevent a decrease in the intensity of red light.
  • the content of the first red phosphor 51 is not particularly limited.
  • the content of the first red phosphor 51 is preferably 1.2 times or more and 1.5 times or less (mass ratio) of the content of the first green phosphor 41. Thereby, it is possible to obtain white light that is more excellent in color reproducibility and brighter.
  • the Mn 4+ activated halide phosphor is preferably formed in the form of particles.
  • “the Mn 4+ -activated halide phosphor is formed in the form of particles” means that the volume-based median diameter of the Mn 4+ -activated halide phosphor is 10 ⁇ m or more and 90 ⁇ m or less. To do.
  • the volume-based median diameter of the Mn 4+ activated halide phosphor is 20 ⁇ m or more and 50 ⁇ m or less.
  • the volume median diameter of Mn 4+ -activated halide phosphor means a median diameter when measuring particle size distribution of the Mn 4+ -activated halide phosphor on a volume basis, for example, a flow particle image It is measured using an analyzer or the like.
  • Mn 4+ -activated halide phosphor represented by the general formula (M1) represented by 2 ((M2) 1-y Mn y) X 6.
  • (M1) represents at least one alkali metal element of Li, Na, K, Rb, and Cs.
  • (M2) represents at least one tetravalent metal element of Ge, Si, Sn, Ti, and Zr.
  • y satisfies 0.001 ⁇ y ⁇ 0.2.
  • X represents at least one halogen element of F, Cl and Br.
  • Mn 4+ activated halide phosphor is, for example, K 2 SiF 6 : Mn.
  • the Mn 4+ activated halide phosphor preferably contains an activating element (Mn (manganese)) in an amount of about 10 mol% of the element to be substituted.
  • Mn manganese
  • K 2 SiF 6 : Mn part or all of K may be substituted with at least one of Li, Na, Rb and Cs, and part or all of Si may be Ge, Sn, Ti and It may be substituted with at least one of Zr, or a part or all of F may be substituted with at least one of Cl and Br.
  • K 2 SiF 6 : Mn a metal element (Mn) occupying an interstitial position may be added to the base crystal (K 2 SiF 6 ).
  • first green phosphor 41 it is preferable to use a green phosphor that is excited by the light emitted from the ultraviolet light or the violet light emitting element 10 but not excited by the light emitted from the blue light emitting element 20.
  • the first red phosphor 51 is preferably a red phosphor that is excited by light emitted from the blue light emitting element 20 but not excited by light emitted from the ultraviolet light or the violet light emitting element 10.
  • the light emitting device 100 can be manufactured according to the following method. First, the ultraviolet or purple light emitting element 10 is fixed to the first inner lead 105A and the blue light emitting element 20 is fixed to the second inner lead 105B using an adhesive. Thereafter, the bonding wire 15 is used to connect the n-side electrode of the ultraviolet or violet light-emitting element 10 and the first inner lead 105A, and the p-side electrode of the ultraviolet or violet light-emitting element 10 and the n-side electrode of the blue light-emitting element 20 And the p-side electrode of the blue light emitting element 20 and the second inner lead 105B are connected.
  • the sealing resin 30, the first green phosphor 41 and the first red phosphor 51 are mixed to obtain a kneaded product (which becomes a sealing member by curing the sealing resin 30).
  • This kneaded material is supplied to the concave portion of the substrate 101.
  • the kneaded material may be supplied using a spatula, or the kneaded material may be supplied using a discharge device (see FIG. 4A or FIG. 4B).
  • the sealing resin 30 is cured. In this way, the light emitting device 100 is obtained.
  • FIG. 3 is a cross-sectional view of a light emitting device according to a second embodiment of the present invention. Hereinafter, points different from the first embodiment will be mainly described.
  • the first light emitting region 131 and the second light emitting region 133 are provided in the recess of the base 101 of the light emitting device 200 of the present embodiment.
  • the first light emitting region 131 is provided with a first sealing member including the first sealing resin 31, the second green phosphor 43, and the first red phosphor 51.
  • the second green phosphor 43 is excited by at least the light emitted from the ultraviolet light or the violet light emitting element 10 and generates light having a fluorescence peak wavelength on the longer wavelength side than the first green phosphor 41.
  • blue light from the blue light emitting element 20, green light from the second green phosphor 43, and red light from the first red phosphor 51 are mixed. Is obtained.
  • the second light emitting region 133 is provided with a second sealing member including the second sealing resin 33, the first green phosphor 41, and the second red phosphor 53.
  • the second red phosphor 53 is excited by at least light emitted from the blue light emitting element 20 and generates light having a fluorescence peak wavelength on the longer wavelength side than the first red phosphor 51.
  • the blue light from the blue light emitting element 20, the green light from the first green phosphor 41, and the red light from the second red phosphor 53 are mixed. Is obtained.
  • white light is obtained from the first light emitting region 131 and the second light emitting region 133, so that bright white light with excellent color reproducibility can be obtained.
  • the light emitting device 200 includes not only the first green phosphor 41 but also the second green phosphor 43 as the green phosphor, and includes not only the first red phosphor 51 but also the second red phosphor 53 as the red phosphor. .
  • the light-emitting device 200 is suitable as a light-emitting device that is mounted on a mounting substrate including an electric circuit such as a drive circuit.
  • a display device with excellent color reproducibility can be thinned.
  • the first light emitting region 131 includes the second green phosphor 43 and the first red phosphor 51
  • the second light emitting region 133 includes the first green phosphor 41, the second red phosphor 53, and the like. including.
  • the first green phosphor 41 and the first red phosphor 51 are not excellent in luminous efficiency. Therefore, each content of the 1st green fluorescent substance 41 and the 1st red fluorescent substance 51 with respect to sealing resin increases. Therefore, if the first green phosphor 41 and the first red phosphor 51 are simultaneously ejected from the ejection device (see, for example, FIGS. 4A and 4B), the nozzle of the ejection device is clogged. May occur.
  • the first light emitting region 131 includes the first red phosphor 51 and the second light emitting region 133 includes the first green phosphor 41.
  • the 1st green fluorescent substance 41 and the 1st red fluorescent substance 51 can be discharged from a discharge apparatus separately. Therefore, clogging at the nozzle of the discharge device can be reduced.
  • the same material as the sealing resin 30 can be used as the first sealing resin 31 and the second sealing resin 33.
  • the first sealing resin 31 and the second sealing resin 33 may be the same material or different materials.
  • the second green phosphor 43 is not particularly limited as long as it is a material that generates light having a fluorescence peak wavelength on the longer wavelength side than the first green phosphor 41 by light emitted from at least ultraviolet rays or the violet light emitting element 10.
  • the second green phosphor 43 (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, (Mg, Ca, Sr, Ba) Si 2 O 2 N 2 : Eu, (Ba, Sr) 3 Si 6 O 10 N 2 : Eu, (Sr, Ca, Ba) (Al, Ga, In) 2 S 4 : Eu, (Y, Tb) 3 (Al, Ga) 5 O 12 : Ce, Ca 3 (Sc , Mg, Na, Li) 2 Si 3 O 10 : Ce, SrGa 2 S 4 : Eu, SrAl 2 O 4 : Eu, SrAl 2 O 4 : Eu, Dy, or (Ca, Sr) Sc 2 O 4 : Ce or the like is preferable.
  • the second green phosphor 43 uses an allowable transition for excitation and emission. Therefore, the absorption efficiency of the ultraviolet light and violet light of the second green phosphor 43 is higher than those of the first green phosphor 41. Thus, by using the first green phosphor 41 and the second green phosphor 43, the content of the green phosphor (the content of the first green phosphor 41 and the content of the second green phosphor 43) Total) can be reduced. Therefore, the first green phosphor 41 and the first red phosphor are more preferably supplied to the concave portion of the substrate 101 with the kneaded material including the first green phosphor 41, the second green phosphor 43, and the first red phosphor 51.
  • the kneaded material including 51 (the kneaded material of the first embodiment) is supplied to the concave portion of the substrate 101, the kneaded material can be easily supplied. Therefore, the manufacturing cost of the light emitting device 200 can be kept low. Such an effect becomes remarkable when the opening of the concave portion of the base 101 is small.
  • the second green phosphor 43 is less expensive than the first green phosphor 41. From the above, if the first green phosphor 41 and the second green phosphor 43 are used, an inexpensive version of a light emitting device having excellent color reproducibility can be provided.
  • the content of the second green phosphor 43 is not particularly limited.
  • the content of the second green phosphor 43 is preferably 1/7 times or more and 1/5 times (mass ratio) of the content of the first green phosphor 41.
  • the content of the green phosphor can be further reduced, it is possible to provide a further inexpensive version of the light emitting device having excellent color reproducibility.
  • the second red phosphor 53 is not particularly limited as long as it is a material that generates light having a fluorescence peak wavelength on the longer wavelength side than the first red phosphor 51 by light emitted from at least the blue light emitting element 20.
  • the second red phosphor 53 is CaAlSiN 3 : Eu, (Sr ⁇ Ca) AlSiN 3 : Eu, (M3) S: Eu ((M3) is at least one of Ca, Sr and Ba) And (M4) 2 Si 5 N 8 : Eu (wherein (M4) represents at least one divalent metal element of Ca, Sr, and Ba).
  • the second red phosphor 53 is CaAlSiN 3 : Eu, (Sr ⁇ Ca) AlSiN 3 : Eu, (M3) S: Eu ((M3) is at least one of Ca, Sr and Ba) And (M4) 2 Si 5 N 8 : Eu (wherein (M4) represents at least one divalent metal element of Ca, Sr, and Ba).
  • the second red phosphor 53 uses an allowable transition for excitation and emission. Therefore, the blue light absorption efficiency of the second red phosphor 53 is higher than the blue light absorption efficiency of the first red phosphor 51. Thus, by using the first red phosphor 51 and the second red phosphor 53, the content of the red phosphor (the content of the first red phosphor 51 and the content of the second red phosphor 53 is determined). Total) can be reduced. Therefore, the first green phosphor 41 and the first red phosphor are more preferably supplied to the concave portion of the base 101 with the kneaded material including the first green phosphor 41, the first red phosphor 51 and the second red phosphor 53.
  • the kneaded material including 51 (the kneaded material of the first embodiment) is supplied to the concave portion of the substrate 101, the kneaded material can be easily supplied. Therefore, the manufacturing cost of the light emitting device 200 can be kept low. Such an effect becomes remarkable when the opening of the concave portion of the base 101 is small.
  • the second red phosphor 53 is less expensive than the first red phosphor 51. From the above, if the first red phosphor 51 and the second red phosphor 53 are used, an inexpensive version of a light emitting device having excellent color reproducibility can be provided.
  • FIGS. 4A and 4B are cross-sectional views illustrating a part of the method for manufacturing the light emitting device 200 in the order of steps.
  • the ultraviolet or violet light emitting element 10 and the blue light emitting element 20 are fixed to the base 101 and wired to the base 101.
  • the first sealing resin 31, the second green phosphor 43, and the first red phosphor 51 are mixed to obtain a first kneaded product.
  • the first discharge device 91 the first kneaded product is supplied to the concave portion of the base 101 (FIG. 4A).
  • the second sealing resin 33, the first green phosphor 41, and the second red phosphor 53 are mixed to obtain a second kneaded product.
  • the second kneaded product is supplied to the concave portion of the base 101 (FIG. 4B).
  • the first sealing resin 31 and the second sealing resin 33 are cured.
  • the first light emitting region 131 and the second light emitting region 133 are formed, and thus the light emitting device 200 is obtained.
  • first light emitting region 131 may not include the second green phosphor 43.
  • the second light emitting region 133 may not include the second red phosphor 53.
  • the first light emitting region 131 may include the first green phosphor 41 instead of the second green phosphor 43.
  • the second light emitting region 133 may include the first red phosphor 51 instead of the second red phosphor 53.
  • the second light emitting region 133 may be provided on the bottom surface side (first inner lead 105A side, second inner lead 105B side) of the concave portion of the base 101 with respect to the first light emitting region 131. The boundary between the first light emitting region 131 and the second light emitting region 133 may not be clear.
  • FIG. 5A is a plan view of a light emitting device according to a third embodiment of the present invention
  • FIG. 5B is a cross-sectional view taken along the line VB-VB shown in FIG.
  • differences from the first and second embodiments will be mainly described.
  • the light-emitting device 300 of this embodiment includes a substrate 301, a resin dam 303, a first electrode 305, and a second electrode 307.
  • the substrate 301 is preferably a ceramic substrate, and preferably has a rectangular shape in plan view.
  • the resin dam 303 is provided on the upper surface of the substrate 301, and is provided in a ring shape on the upper surface of the substrate 301.
  • the first electrode 305 and the second electrode 307 are provided on the upper surface of the substrate 301 and outside the resin dam 303, and are configured to be connectable to external terminals.
  • Each of the first electrode 305 and the second electrode 307 is connected to the ultraviolet or purple light emitting element 10 and the blue light emitting element 20, so that the ultraviolet or purple light emitting element 10 and the blue light emitting element 20 can emit light. Become.
  • green light emitting areas 135 and red light emitting areas 137 are alternately provided in a plan view.
  • a plurality of ultraviolet or violet light emitting elements 10 are provided on the upper surface of the substrate 301, and a third sealing resin 35, a first green phosphor 41, and a second green phosphor 43 are included.
  • the sealing member covers the ultraviolet or purple light emitting element 10.
  • a plurality of blue light emitting elements 20 are provided on the upper surface of the substrate 301, and the fourth sealing member including the fourth sealing resin 37 and the first red phosphor 51 replaces the blue light emitting elements 20. Covering.
  • green light is obtained from the green light emitting region 135 and red light is obtained from the red light emitting region 137. Therefore, bright white light with excellent color reproducibility can be obtained by combining the blue light from the blue light emitting element 20, the green light from the green light emitting region 135, and the red light from the red light emitting region 137.
  • the same material as the sealing resin 30 of the first embodiment may be used, or a resin having high thixotropy may be used.
  • the third sealing resin 35 and the fourth sealing resin 37 may be the same material or different materials.
  • the light emitting device 300 includes the green light emitting region 135 and the red light emitting region 137. Therefore, the light emitted from the blue light emitting element 20 can be prevented from entering the first green phosphor 41 and the second green phosphor 43. Therefore, each material of the first green phosphor 41 and the second green phosphor 43 can be selected without considering whether or not the light is emitted by the light emitted from the blue light emitting element 20. Similarly, the light emitted from the ultraviolet light or the violet light emitting element 10 can be prevented from entering the first red phosphor 51. Therefore, the material of the first red phosphor 51 can be selected without considering whether it is excited by the light emitted from the ultraviolet light or the purple light emitting element 10. From the above, the range of selection of the phosphor material is widened.
  • the green light emitting region 135 does not have to include the second green phosphor 43.
  • the red light emitting region 137 may include the second red phosphor 53.
  • the occupation ratio of the green light emission area 135 and the occupation ratio of the red light emission area 137 are not particularly limited. Considering the material and content of the green phosphor, the material and content of the red phosphor, or the required light characteristics, etc., the occupation ratio of the green light emitting region 135 and the occupation of the red light emitting region 137 on the upper surface of the substrate 301 It is preferable to determine the rate.
  • the height of the green light emitting region 135 may be higher than the height of the red light emitting region 137 (FIG. 5B), the height of the red light emitting region 137 may be the same, or the red light emitting region 137. It may be lower than the height of. It is possible to determine the height of the green light emitting region 135 and the height of the red light emitting region 137 in consideration of the material and content of the green phosphor, the material and content of the red phosphor, or the required light characteristics, etc. preferable.
  • FIG. 6A is a plan view of a light emitting device according to a fourth embodiment of the present invention
  • FIG. 6B is a cross-sectional view taken along the line VIB-VIB shown in FIG. 6A.
  • differences from the first to third embodiments will be mainly described.
  • the ultraviolet or purple light emitting element 10 and the blue light emitting element 20 are fixed to the upper surface of the mounting portion 105 of the base body 101 by an adhesive.
  • a first light emitting region 131 and a second light emitting region 133 are provided in the recess of the base 101.
  • Each configuration of the first light emitting region 131 and the second light emitting region 133 is as described in the second embodiment. Therefore, the effects described in the second embodiment can be obtained.
  • the protective terminal may be connected in parallel to the ultraviolet or purple light emitting element 10 and the blue light emitting element 20.
  • the light emitting device 100 shown in FIG. 1 and the like has an ultraviolet or violet light emitting element 10 that emits light having an emission peak wavelength in a wavelength range of 360 nm to 430 nm, and an emission peak wavelength in a wavelength range of 430 nm to 480 nm.
  • Such a light emitting device 100 can generate bright white light with excellent color reproducibility.
  • the light emitting device 200 shown in FIG. 3 and the like is excited by at least light emitted from the ultraviolet light or the violet light emitting element 10 and generates second green light that has a fluorescence peak wavelength longer than the first green phosphor 41. It is preferable to further include a phosphor 43.
  • the first red phosphor 51 is represented by the general formula (M1) 2 ((M2) 1-y Mn y) X 6
  • (M1) is at least one alkali of Li, Na, K, Rb and Cs Represents a metal element
  • (M2) represents at least one tetravalent metal element of Ge, Si, Sn, Ti and Zr
  • y satisfies 0.001 ⁇ y ⁇ 0.2
  • X is F
  • the light emitting device 200 shown in FIG. 3 and the like preferably further includes a second red phosphor 53.
  • the second red phosphor 53 is preferably CaAlSiN 3 : Eu, (Sr ⁇ Ca) AlSiN 3 : Eu, (M3) S: Eu ((M3) is at least two of Ca, Sr and Ba) And (M4) 2 Si 5 N 8 : Eu (wherein (M4) represents at least one divalent metal element of Ca, Sr, and Ba).
  • the second red phosphor 53 is preferably CaAlSiN 3 : Eu, (Sr ⁇ Ca) AlSiN 3 : Eu, (M3) S: Eu ((M3) is at least two of Ca, Sr and Ba) And (M4) 2 Si 5 N 8 : Eu (wherein (M4) represents at least one divalent metal element of Ca, Sr, and Ba).
  • first green phosphor 41 or instead of the first green phosphor 41 and the second green phosphor 43, green that emits light having an emission peak wavelength within a wavelength range of 500 nm to 580 nm.
  • a light emitting element may be provided.
  • a light emitting element may be provided.
  • Example 1 In Example 1, the light emitting device 100 shown in FIG. 1 was manufactured, and its emission spectrum was measured.
  • an ultraviolet or purple light emitting element and a blue light emitting element were prepared.
  • a GaN layer (light-emitting layer) that emits light having an emission peak wavelength at 405 nm is provided, and an n-side electrode and a p-side electrode are provided on the upper surface thereof.
  • a sapphire substrate and an InGaN layer (light emitting layer) that emits light having an emission peak wavelength at 450 nm are provided, and an n-side electrode and a p-side electrode are provided on the upper surface thereof.
  • the long side of the concave portion (the length in the horizontal direction in FIG. 1A) is 4 mm, and the short side of the concave portion (the length in the vertical direction in FIG. 1A) is 0.4 mm.
  • the depth of the recess was 0.3 mm.
  • the ultraviolet or purple light emitting element was bonded to the first inner lead of the base, and the blue light emitting element was bonded to the second inner lead of the base.
  • an Au wire bonding wire
  • the n-side electrode of the ultraviolet or violet light-emitting element is connected to the first inner lead, and the p-side electrode of the ultraviolet or violet light-emitting element and the n-side electrode of the blue light-emitting element are connected.
  • the p-side electrode of the blue light emitting element and the second inner lead were connected.
  • a silicone resin (sealing resin), BaMgAl 10 O 17 : Eu, Mn (volume-based median diameter is 8 ⁇ m, first green phosphor) and Mn 4+ activated halide phosphor (K 2 SiF 6 : Mn and the first red phosphor) were mixed to obtain a kneaded product.
  • the content of the first red phosphor was 1.3 times (mass ratio) of the content of the first green phosphor.
  • FIG. 2 is a graph showing an emission spectrum of the light emitting device of this example. As shown in FIG. 2, it can be seen that the light from the light emitting device of this embodiment includes green light, blue light, and red light. From the above, it was confirmed that the light emitting device of this example can generate bright white light with excellent color reproducibility.
  • Example 2 In Example 2, the light emitting device 200 shown in FIG. 3 was manufactured.
  • the ultraviolet or purple light emitting element and the blue light emitting element were bonded to a predetermined position of the base, and the ultraviolet or purple light emitting element and the blue light emitting element were wired on the base.
  • a phenyl silicone resin (agent A (main agent)) with a viscosity of 13000 mPa ⁇ s
  • a phenyl silicone resin (agent B (curing agent)) with a viscosity of 3600 mPa ⁇ s (first sealing resin)
  • K 2 SiF 6 Mn (volume-based median diameter 34.0 ⁇ m, first red phosphor) and Eu 0.05 Si 11.50 Al 0.50 O 0.05 N 15.95 ( ⁇ -type SiAlON) (volume-based median diameter 12.0 ⁇ m, second green
  • a first kneaded material containing a phosphor) was prepared.
  • the 1st kneaded material was supplied to the recessed part of the base
  • the used discharge device was provided with a nozzle having an outer diameter of 0.35 mm and an inner diameter of 0.23 mm.
  • a phenyl silicone resin (A agent (main agent)) having a viscosity of 13000 mPa ⁇ s
  • a phenyl silicone resin (B agent (curing agent)) (second sealing resin) having a viscosity of 3600 mPa ⁇ s
  • BaMgAl 10 O 17 Eu
  • Mn volume-based median diameter 20.0 ⁇ m, first green phosphor
  • CaAlSiN 3 Eu (volume-based median diameter 10.0 ⁇ m, second red phosphor) I prepared something.
  • the second kneaded material was supplied onto the first kneaded material in the recess of the substrate.
  • phenyl silicone resin (A agent (main agent)) was hardened by phenyl silicone resin (B agent (curing agent)), and thus the light emitting device of this example was obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un dispositif électroluminescent (100) qui comprend au moins : un élément (10) émettant une lumière ultraviolette ou violette qui émet une lumière ayant une longueur d'onde de pic d'émission de lumière dans une plage de longueurs d'onde de 360 à 430 nm, un élément (20) émettant une lumière bleue qui émet une lumière ayant une longueur d'onde de pic d'émission de lumière dans une plage de longueurs d'onde de 430 à 480 nm, un premier luminophore vert (41) qui est excité au moins par la lumière émise par l'élément (10) émettant une lumière ultraviolette ou violette et qui génère une lumière ayant une longueur d'onde de pic de fluorescence dans une plage de longueurs d'onde de 500 à 580 nm, et un premier luminophore rouge (51) qui est excité au moins par la lumière émise au moins par l'élément (20) émettant une lumière bleue et qui génère une lumière ayant une longueur d'onde de pic de fluorescence dans une plage de longueurs d'onde de 600 à 670 nm.
PCT/JP2015/068170 2014-07-08 2015-06-24 Dispositif électroluminescent WO2016006444A1 (fr)

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JP2014-140446 2014-07-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112094639A (zh) * 2020-09-24 2020-12-18 东台市天源光电科技有限公司 一种高性能蓄光灭蚊灯荧光粉及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249807A (ja) * 2010-05-24 2011-12-08 Lg Innotek Co Ltd 発光素子及びこれを含むライトユニット
JP2012199539A (ja) * 2011-03-08 2012-10-18 Mitsubishi Chemicals Corp 発光装置及び発光装置を備えた照明装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249807A (ja) * 2010-05-24 2011-12-08 Lg Innotek Co Ltd 発光素子及びこれを含むライトユニット
JP2012199539A (ja) * 2011-03-08 2012-10-18 Mitsubishi Chemicals Corp 発光装置及び発光装置を備えた照明装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112094639A (zh) * 2020-09-24 2020-12-18 东台市天源光电科技有限公司 一种高性能蓄光灭蚊灯荧光粉及其制备方法

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