WO2015149580A1 - Method for manufacturing flexible copper clad laminate with metalized through-hole - Google Patents

Method for manufacturing flexible copper clad laminate with metalized through-hole Download PDF

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Publication number
WO2015149580A1
WO2015149580A1 PCT/CN2015/071762 CN2015071762W WO2015149580A1 WO 2015149580 A1 WO2015149580 A1 WO 2015149580A1 CN 2015071762 W CN2015071762 W CN 2015071762W WO 2015149580 A1 WO2015149580 A1 WO 2015149580A1
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Prior art keywords
copper clad
clad laminate
flexible
seed layer
conductive seed
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PCT/CN2015/071762
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French (fr)
Chinese (zh)
Inventor
杨念群
安兵
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珠海市创元电子有限公司
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Publication of WO2015149580A1 publication Critical patent/WO2015149580A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal

Definitions

  • the present invention relates to the field of manufacturing flexible circuit boards, and more particularly to a method of manufacturing a flexible copper clad laminate with metalized vias.
  • Flexible Printed Circuit Board also known as flexible circuit board, is a printed circuit board with high reliability and flexibility made of flexible copper clad laminate.
  • Flexible Copper Clad Laminate FCCL is a copper clad laminate having excellent flexural properties formed by bonding a copper foil of a certain thickness on one or both sides of a flexible organic film.
  • Via is one of the important components of double-layer and multi-layer flexible circuit boards. In order to connect the copper layers between the various layers of the flexible circuit board, it is necessary to drill the flexible circuit board and metallize the holes to form metallized vias.
  • a prior art method of making a flexible copper clad laminate with metallized vias is to first fabricate a flexible copper clad laminate and then fabricate metallized vias on the flexible copper clad laminate.
  • the specific process for manufacturing the flexible copper clad laminate is: forming a copper foil by calendering or electrolysis, and then bonding the copper foil to the flexible organic film by a certain process to form a flexible copper clad laminate; on the flexible copper clad laminate
  • the specific process for manufacturing metallized vias is as follows: by mechanical (or laser or the like) drilling, forming a via structure on the flexible copper clad plate, and then forming a conductive on the hole wall of the hole structure by electroless copper plating or black hole process. A very thin copper coating or carbon black layer is then electroplated to form a metallic conductor layer to form a conductive metallized via on the flexible copper clad laminate.
  • the prior art method for manufacturing a flexible copper clad laminate with metalized vias has the disadvantages of complicated process, long manufacturing process, poor conductivity of the formed via holes, high fabrication cost, high difficulty in wastewater treatment, and large environmental pollution. .
  • the object of the present invention is to provide a method for manufacturing a flexible copper clad laminate with metalized vias to simplify the process of manufacturing a flexible copper clad laminate with metalized vias and to improve the metallization of the flexible copper clad laminate.
  • the conductivity of the hole, the uniformity and integrity of the via copper plating layer, and the production cost are greatly reduced.
  • the wastewater generated by this method is simple and mature, and has no pollution to the environment.
  • the present invention provides a method of making a flexible copper clad laminate with metalized vias, the method comprising:
  • a metal conductor layer is formed on the conductive seed layer.
  • the flexible organic film comprises: a polyimide film, a liquid crystal polymer film, a polyurea film, a polystyrene film, a polyethylene terephthalate film, a polytetrafluoroethylene One or more of a film or a polyethylene naphthalate film.
  • the shape of the hole structure is circular, square or other shape.
  • the method for forming a pore structure on the flexible organic film may be one of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method, or A variety.
  • a conductive seed layer is formed on the pore walls of the pore structure and the surface of the flexible organic film by a vacuum vapor deposition process.
  • the conductive seed layer has a thickness ranging from 1 to 1000 nanometers.
  • the conductive seed layer has a sheet resistance of less than 200 ⁇ / ⁇ .
  • a method of forming a metal conductor layer on the conductive seed layer may be selected from one or more of a plating method, a immersion plating method, and a vacuum sputtering method.
  • the metal conductor layer has a thickness ranging from 1 to 100 micrometers.
  • the present invention also provides a method of manufacturing a flexible copper clad laminate with metalized vias, the method comprising:
  • a metal conductor layer is formed on the conductive seed layer.
  • the hole structure is formed on the flexible copper clad plate, and one or more of a mechanical drilling method, a punching method, a laser drilling method, and a plasma etching method may be selected.
  • a method of forming a metal conductor layer on the conductive seed layer may be one or more of an electroplating method, a immersion plating method, and a vacuum sputtering method.
  • the present invention also provides a method of fabricating a flexible circuit board, the method comprising the method of manufacturing a flexible copper clad laminate with metalized vias provided by any embodiment of the present invention.
  • the invention provides a method for manufacturing a flexible copper clad laminate with metalized vias, which can directly manufacture a metallized via on a flexible organic film, and manufacture a flexible copper clad laminate, which simplifies manufacturing and metallization.
  • the process of the through-hole flexible copper clad laminate improves the electrical conductivity of the metallized vias in the flexible copper clad laminate.
  • FIG. 1 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a first embodiment of the present invention
  • FIGS. 2a-2d are structural views corresponding to the steps of a method for manufacturing a flexible copper clad laminate with metallized vias according to an embodiment of the present invention
  • FIG. 3 is a flow chart showing an implementation of a method for manufacturing a flexible copper clad laminate with metalized vias according to a second embodiment of the present invention
  • FIG. 1 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a first embodiment of the present invention. As shown in FIG. 1, the method provided by the embodiment of the present invention includes:
  • step 101 a pore structure is formed on the flexible organic film.
  • FIG. 2b is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias according to an embodiment of the present invention. Referring to Figures 2a and 2b, a hole structure 211 as shown in Figure 2b is formed on the flexible organic film 201 as shown in Figure 2a.
  • the flexible organic film may include: a polyimide (PI) film, a liquid crystal polymer (LCP) film, a polyparabanic acid (PPA) film, and a polyphenylene.
  • PI polyimide
  • LCP liquid crystal polymer
  • PPA polyparabanic acid
  • PS Polystyrene
  • PET polyethylene terephthalate
  • PTFE polytetrafluoroethylene
  • PEN Polyethylene Naphthalate
  • the shape of the hole structure 211 may be circular or square.
  • the shape of the hole structure is not specifically limited in the embodiment of the present invention, and other shapes may be used in addition to the circular or square shape provided above.
  • the method for forming the hole structure 211 on the flexible organic film 201 may be one of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method.
  • a mechanical drilling method e.g., a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method.
  • the continuous drilling method can be used to form the hole structure 211, such as continuous punching or continuous laser drilling.
  • said The method used for laser drilling may be one or more of an infrared laser drilling method, a YAG laser drilling method, and an ultraviolet laser drilling method.
  • an ultraviolet laser drilling method In order to reduce the heat-affected zone and prevent the edge of the via from being damaged by heat, it is preferred to use an ultraviolet laser drilling method; if the flexible circuit board is manufactured by a single manufacturing method, it is preferable to use mechanical drilling or laser drilling.
  • the method forms a pore structure 211.
  • the holes of the hole structure 211 are cleaned.
  • Step 102 forming a conductive seed layer on the pore walls of the pore structure and the surface of the flexible organic film.
  • FIG. 2c is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias according to an embodiment of the present invention.
  • a conductive seed layer 202 is formed on the cell walls of the hole structure 211 and the surface of the flexible organic film 201.
  • a conductive seed layer is formed on the pore walls of the pore structure 211 and the surface of the flexible organic film 201 by a vacuum vapor deposition process.
  • the vacuum vapor deposition process may select one or more of a plasma injection method, a plasma deposition method, a sputtering method, and an evaporation method.
  • a sputtering method, a plasma implantation method, or a plasma deposition method is preferable because the particles, ions, electrons, and the like generated by the particles have a certain amount of energy flying toward the substrate, and
  • the flexible organic film 201 forms a good adhesion, and the formed conductive seed layer deposit is relatively fine and has few defects, so that the via holes formed later are more conductive.
  • a conductive seed layer 202 is formed on the pore walls of the pore structure 211 and the surface of the flexible organic thin film 201 by a vacuum vapor deposition process.
  • the composition of the conductive seed layer 202 is a conductive material, wherein the conductive material includes, but is not limited to, various metals, alloys, carbon, conductive oxides, conductive carbides, and conductive organics, preferably adhesion to the flexible organic film 201.
  • Strong metals and alloys such as titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), silver (Ag), gold (Au), lithium (Li), bismuth (Be), magnesium (Mg ), aluminum (Al), manganese (Mn), iron (Fe), diamond (Co), zinc (Zn), gallium (Ga), germanium (Ge), carbon (C), silicon (Si), germanium (Y) ), vanadium (V), zirconium (Zr), molybdenum (Mo), palladium (Pd), cadmium (Cd), niobium (Nb), indium (work n), tin (Sn), antimony (Sb), antimony ( Te), barium (Ba), tantalum (Ta), tungsten (W), platinum (Pt), tantalum (Tl), lead (Pb), tantalum (Bi) and their binary, ternary and quaternary alloys.
  • the conductive seed layer 202 has a thickness ranging from 1 to 1000 nm.
  • the conductive seed layer 202 has a sheet resistance of less than 200 ⁇ / ⁇ .
  • Step 103 forming a metal conductor layer on the conductive seed layer.
  • FIG. 2d is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias provided in an embodiment of the present invention.
  • a metal conductor layer 203 is formed on the conductive seed layer 202.
  • a method of forming the metal conductor layer 203 on the conductive seed layer 202 may be one or more of a plating method, a immersion plating method, and a vacuum sputtering method.
  • the electroplating method has the characteristics of wide plating material, fast plating speed and low cost, and the materials used for electroplating may include Cu, Ni, Sn, Au, Ag, Pt, Pd and their binary and ternary alloys;
  • the immersion plating method has the advantages of convenient operation, but the alloy selection of the metal-plated conductor layer is narrow, and the immersion plating method can be used to plate the low-melting solder alloy, such as various solder alloys having a melting point of less than 400 degrees Celsius, such as Sn, tin-lead (SnPb) alloy, tin-silver-copper (SnAgCu) alloy, tin-copper (SnCu) alloy, gold-tin (AuSn) alloy; vacuum sputtering method has the characteristics of high sputtering speed, especially for some conductive materials, especially Metals and alloys, such as Al, Cu, Ag, Sn, Ni, Au, etc., and alloys thereof can be sputtered at a rate of 100 nm/min, so vacuum sputtering can be used to rapidly plate the metal conductor layer.
  • solder alloy such as various solder alloys having a melting point of less than 400 degrees Celsius
  • SnPb tin
  • the metal conductor layer 203 has a thickness ranging from 1 to 100 micrometers.
  • the embodiments of the present invention are capable of manufacturing a flexible copper clad laminate while manufacturing metallized via holes directly on a flexible organic film, which is more valuable for industrial production. If the manufacturing enterprise adopts the method provided by the embodiment of the present invention, it is not necessary to purchase the flexible copper-clad board in actual production, and the flexible organic film can be directly purchased, and the metallized via hole is manufactured on the flexible organic film, and the manufacturing is scratched. Spherical copper clad laminate. In this way, the manufacturing cost of the flexible copper clad laminate is reduced, and the process of manufacturing the flexible copper clad laminate with metalized via holes is simplified.
  • a mechanical drilling method and an ultraviolet laser drilling method can be employed, and continuous drilling is performed according to the requirements of the flexible circuit board to form on the flexible organic film.
  • the pore structure may have a pore size of at least 25 ⁇ m, the pore structure may be a square hole or a round hole, or may be a pore structure of other shapes; further, a vacuum "ion implantation + plasma deposition" method in which the pore structure is a hole wall, and a surface of the flexible organic film, forming a 10 nm Cr layer as a conductive seed layer, the Cr layer has a sheet resistance of less than 100 ⁇ / ⁇ (ohms per square); further, using continuous plating equipment, On the conductive seed layer, a Cu layer of 1 to 18 ⁇ m is plated as a metal Conductor layer. At this time, a flexible copper clad laminate with metalized via holes was formed on the basis of the flexible organic film.
  • a flexible organic film prepared in a roll and attached to a tape-type mask is plasma etched and passed through a tape-and-reel mask, in accordance with the requirements of the flexible circuit board, and in a flexible organic
  • the pore structure is continuously etched on the film, the pore structure of the pore structure may be at least 25 ⁇ m, the pore structure may be a square hole, a circular hole or other shapes; further, by vacuum sputtering, the pore wall of the pore structure and the
  • the surface of the flexible organic film forms a nickel-chromium (NiCr) alloy layer of 10 to 100 nm, and as a conductive seed layer, the sheet resistance of the NiCr alloy layer is less than 100 ⁇ / ⁇ ; further, using a continuous plating apparatus, the conductive seed On the crystal layer, a Cu layer of 1 to 18 ⁇ m was plated as a metal conductor layer. At this time, a flexible copper clad laminate having metalized via holes was formed on the flexible organic film.
  • the method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment can directly manufacture a flexible copper clad laminate while manufacturing metallized via holes on the flexible organic thin film, thereby simplifying the manufacture of the metallized via holes.
  • the process of the flexible copper clad laminate improves the electrical conductivity of the metallized vias in the flexible copper clad laminate. Therefore, the present invention has a good application prospect in the industry, and the technology of the present invention is also convenient for popularization and application.
  • Embodiments of the present invention also provide a method of fabricating a flexible circuit board, the method of fabricating the flexible circuit board comprising the method of manufacturing a flexible copper clad laminate with metalized vias, wherein the manufacturing is performed with a metal A method of forming a flexible copper clad laminate of a via, using a method of fabricating a flexible copper clad laminate with metalized vias provided by any of the embodiments of the present invention.
  • FIG. 3 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a second embodiment of the present invention. As shown in FIG. 3, the method provided by the embodiment of the present invention includes:
  • step 301 a pore structure is formed on the flexible organic film.
  • the flexible organic film may include: a polyimide film, a liquid crystal polymer film, a polyurea film, a polystyrene film, a polyethylene terephthalate film, a polytetrafluoroethylene Film or polyethylene naphthalate film.
  • the shape of the pore structure is circular or square.
  • the method for forming a pore structure on the flexible organic film may be one or more selected from the group consisting of a mechanical drilling method, a punching method, a laser drilling method, and a plasma etching method.
  • Step 302 forming a conductive seed layer on the pore wall of the pore structure and the surface of the flexible organic film by a vacuum vapor deposition process.
  • the conductive seed layer has a thickness ranging from 1 to 1000 nm.
  • the conductive seed layer has a sheet resistance of less than 200 ⁇ / ⁇ .
  • the electroless copper plating or black hole process is used to form the conductive layer
  • the above solution adopts a vacuum vapor deposition process to form a conductive seed layer on the hole wall of the hole structure and the surface of the flexible organic film.
  • the time for forming the conductive seed layer is shortened, the manufacturing process of the conductive seed layer is simplified, and the formed conductive seed layer has good adhesion, clean and no pollution, so that the via formed later has better conductivity.
  • Step 303 forming a metal conductor layer on the conductive seed layer.
  • the method of forming a metal conductor layer on the conductive seed layer may be selected by one or more of a plating method, a immersion plating method, and a sputtering method.
  • the metal conductor layer has a thickness ranging from 1 to 100 micrometers.
  • the method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment provides a conductive seed layer on the pore walls of the pore structure and the surface of the flexible organic film by using a vacuum vapor deposition process, thereby conducting electricity
  • the formation of a metal conductor layer on the seed layer can improve the electrical conductivity of the metallized vias in the flexible copper clad laminate.
  • FIG. 4 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a third embodiment of the present invention. As shown in FIG. 4, the method provided by the embodiment of the present invention includes:
  • step 401 a hole structure is formed on the flexible copper clad laminate.
  • the method for forming a hole structure on the flexible copper clad plate may be one or more of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method.
  • a mechanical drilling method a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method.
  • Step 402 forming a conductive seed layer on the hole wall of the hole structure and the surface of the flexible copper clad plate by a vacuum vapor deposition process.
  • the electroless copper plating or black hole process is used to form the conductive layer
  • the above solution adopts a vacuum vapor deposition process to form a conductive layer on the hole wall of the hole structure of the flexible copper clad plate and the surface of the flexible copper clad plate.
  • the seed layer, the formed conductive seed layer has good adhesion, clean and pollution-free, and shortens the formation of the guide
  • the time of the seed layer simplifies the manufacturing process of the conductive seed layer, thereby improving the electrical conductivity of the metallized via in the flexible copper clad laminate.
  • Step 403 forming a metal conductor layer on the conductive seed layer.
  • the method of forming a metal conductor layer on the conductive seed layer may be one or more selected from the group consisting of a plating method, a immersion plating method, and a sputtering method.
  • a continuous drilling method is performed by a mechanical drilling method and an ultraviolet laser drilling method to form a hole structure on the flexible copper clad plate, and the pore size of the hole structure may be at least 25 ⁇ m, the pore structure can be a square hole, a round hole or other shapes; further, continuous plasma bombardment is used to perform hole removal and surface cleaning; further, vacuum ion implantation + plasma deposition is used.
  • a hole wall of the pore structure and a surface of the flexible copper clad plate forming a 10 nm Cr layer and a 100 nm Cu layer as a conductive seed layer; further, using a continuous plating apparatus on the conductive seed layer
  • a Cu layer of 1 to 18 ⁇ m was electroplated as a metal conductor layer.
  • a flexible copper clad laminate with metalized via holes is formed.
  • a prepared rectangular flexible copper clad laminate is laminated, and 2 mm of electric bakelite is attached to both sides of the flexible copper clad laminate for bonding, and a hole is formed in the flexible copper clad plate by mechanical drilling.
  • the structure, the pore size of the pore structure may be at least 50 ⁇ m; further, the flexible copper clad laminate is separated into a single joint, and the pore structure of the pore structure is degreased; further, vacuum sputtering is used in the flexible copper clad laminate a hole wall and a surface of the flexible copper clad plate, forming a 100 nm Cu layer as a conductive seed layer; further, plating a 1 to 18 ⁇ m Cu on the conductive seed layer by a single hanging plating Layer as a metal conductor layer.
  • a flexible copper clad laminate with metalized via holes is formed.
  • a flexible copper clad laminate to form a pore structure on the flexible copper clad laminate, the pore structure having a pore size of at least 50 ⁇ m; further, separating them into a single unit, and The pores of the pore structure are subjected to a degumming treatment; further, vacuum sputtering is used to form a 200 nm Ni layer on the pore walls of the flexible copper clad laminate and the surface of the flexible copper clad laminate as a conductive seed layer; further Applying a liquid photosensitive ink (or a photosensitive film) to the flexible copper clad laminate, and exposing the exposed portion of the pore structure; further, using a single immersion plating (such as immersion in tin-copper (SnCu), tin-silver-copper ( SnAgCu) liquid alloy bath), forming a tin plating layer on the conductive seed layer as a metal guide Body layer.
  • a single immersion plating such as immersion in tin-copper (S
  • the method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment, by forming a hole structure on the flexible copper clad plate, using a vacuum vapor deposition process, the hole wall of the hole structure, and the flexibility
  • the surface of the copper clad plate forms a conductive seed layer, and a metal conductor layer is formed on the conductive seed layer, which simplifies the manufacturing process of the conductive seed layer and further improves the electrical conductivity of the metallized via in the flexible copper clad laminate.

Abstract

A method for manufacturing a flexible copper clad laminate with a metalized through-hole. The method comprises: forming a hole structure on a flexible organic film (101); forming a conductive seed crystal layer on the wall of the hole structure and the surface of the flexible organic film (102); and forming a metal conductor layer on the conductive seed crystal layer (103). The method can simplify the process of manufacturing a flexible copper clad laminate with a metalized through-hole, and can improve conductive performance of the metalized through-hole in the flexible copper clad laminate.

Description

一种制造带有金属化过孔的挠性覆铜板的方法Method for manufacturing flexible copper clad laminate with metalized vias
本专利申请要求于2014年04月04日提交的、申请号为201410136108.3、申请人为珠海市创元电子有限公司、发明名称为“一种制造带有金属化过孔的挠性覆铜板的方法”的中国专利申请的优先权，该申请的全文以引用的方式并入本申请中。This patent application claims to be submitted on April 4, 2014, the application number is 201410136108.3, the applicant is Zhuhai Chuangyuan Electronics Co., Ltd., and the invention is entitled "A method for manufacturing flexible copper clad laminate with metalized vias" Priority of the Chinese Patent Application, the entire contents of which is hereby incorporated by reference.
技术领域Technical field
本发明涉及挠性电路板制造技术领域，尤其涉及一种制造带有金属化过孔的挠性覆铜板的方法。The present invention relates to the field of manufacturing flexible circuit boards, and more particularly to a method of manufacturing a flexible copper clad laminate with metalized vias.
背景技术Background technique
挠性电路板(Flexible Printed Circuit Board，FPC)也称为柔性电路板，是以挠性覆铜板为基材制成的一种具有高可靠性和可挠曲性的印制电路板。挠性覆铜板(Flexible Copper Clad Laminate，FCCL)是在挠性有机薄膜的单面或双面粘接一定厚度的铜箔而形成的具有很好的挠曲特性的覆铜板。过孔(Via)是双层及多层挠性电路板的重要组成之一。为了使挠性电路板的各层之间的铜层连接起来，就需要对挠性电路板进行钻孔并且对钻孔进行金属化处理以形成金属化过孔。Flexible Printed Circuit Board (FPC), also known as flexible circuit board, is a printed circuit board with high reliability and flexibility made of flexible copper clad laminate. Flexible Copper Clad Laminate (FCCL) is a copper clad laminate having excellent flexural properties formed by bonding a copper foil of a certain thickness on one or both sides of a flexible organic film. Via is one of the important components of double-layer and multi-layer flexible circuit boards. In order to connect the copper layers between the various layers of the flexible circuit board, it is necessary to drill the flexible circuit board and metallize the holes to form metallized vias.
现有技术制造带有金属化过孔的挠性覆铜板的方法是首先制造挠性覆铜板，然后再在挠性覆铜板上制造金属化过孔。其中，制造挠性覆铜板的具体过程为：通过压延法或电解法制成铜箔，再通过一定工艺将铜箔粘贴在挠性有机薄膜上，就形成挠性覆铜板；在挠性覆铜板上制造金属化过孔的具体过程为：通过机械(或者激光等方法)钻孔，在挠性覆铜板上形成过孔结构，然后采用化学镀铜或黑孔工艺在孔结构的孔壁上形成导电的很薄的铜镀层或者炭黑层，再通过对导电的很薄的铜镀层或者炭黑层进行电镀，形成金属导体层，进而在挠性覆铜板上形成导电的金属化过孔。 A prior art method of making a flexible copper clad laminate with metallized vias is to first fabricate a flexible copper clad laminate and then fabricate metallized vias on the flexible copper clad laminate. Wherein, the specific process for manufacturing the flexible copper clad laminate is: forming a copper foil by calendering or electrolysis, and then bonding the copper foil to the flexible organic film by a certain process to form a flexible copper clad laminate; on the flexible copper clad laminate The specific process for manufacturing metallized vias is as follows: by mechanical (or laser or the like) drilling, forming a via structure on the flexible copper clad plate, and then forming a conductive on the hole wall of the hole structure by electroless copper plating or black hole process. A very thin copper coating or carbon black layer is then electroplated to form a metallic conductor layer to form a conductive metallized via on the flexible copper clad laminate.
但是，现有技术制造带有金属化过孔的挠性覆铜板的方法具有工艺复杂、制作流程长、所形成的过孔的导电性差以及制作成本高、废水处理难度高、环境污染大等缺点。However, the prior art method for manufacturing a flexible copper clad laminate with metalized vias has the disadvantages of complicated process, long manufacturing process, poor conductivity of the formed via holes, high fabrication cost, high difficulty in wastewater treatment, and large environmental pollution. .
发明内容Summary of the invention
本发明的目的在于提出一种制造带有金属化过孔的挠性覆铜板的方法，以简化制造带有金属化过孔的挠性覆铜板的工序，并提高挠性覆铜板中金属化过孔的导电性能、过孔铜镀层的均匀性和完整性，并大幅度降低制作成本，此方法产生的废水，处理方法简单成熟，对环境无污染。The object of the present invention is to provide a method for manufacturing a flexible copper clad laminate with metalized vias to simplify the process of manufacturing a flexible copper clad laminate with metalized vias and to improve the metallization of the flexible copper clad laminate. The conductivity of the hole, the uniformity and integrity of the via copper plating layer, and the production cost are greatly reduced. The wastewater generated by this method is simple and mature, and has no pollution to the environment.
本发明提供了一种制造带有金属化过孔的挠性覆铜板的方法，所述方法包括：The present invention provides a method of making a flexible copper clad laminate with metalized vias, the method comprising:
在挠性有机薄膜上形成过孔结构；Forming a via structure on the flexible organic film;
在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成导电籽晶层；Forming a conductive seed layer on the pore wall of the pore structure and the surface of the flexible organic film;
在所述导电籽晶层上形成金属导体层。A metal conductor layer is formed on the conductive seed layer.
可选的，所述挠性有机薄膜包括：聚酰亚胺薄膜、液晶聚合物薄膜、聚乙二酰脲薄膜、聚苯乙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚四氟乙烯薄膜或聚萘二甲酸乙二醇酯薄膜中的一种或多种。Optionally, the flexible organic film comprises: a polyimide film, a liquid crystal polymer film, a polyurea film, a polystyrene film, a polyethylene terephthalate film, a polytetrafluoroethylene One or more of a film or a polyethylene naphthalate film.
可选的，所述孔结构的形状为圆形、方形或其它形状。Optionally, the shape of the hole structure is circular, square or other shape.
可选的，所述在挠性有机薄膜上形成孔结构的方法，可选用机械钻孔方法、冲孔方法、激光钻孔方法、等离子体刻蚀方法以及反应离子刻蚀方法中的一种或多种。Optionally, the method for forming a pore structure on the flexible organic film may be one of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method, or A variety.
可选的，采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成导电籽晶层。Optionally, a conductive seed layer is formed on the pore walls of the pore structure and the surface of the flexible organic film by a vacuum vapor deposition process.
可选的，所述导电籽晶层的厚度范围为1至1000纳米。Optionally, the conductive seed layer has a thickness ranging from 1 to 1000 nanometers.
可选的，所述导电籽晶层的方块电阻小于200Ω/□。Optionally, the conductive seed layer has a sheet resistance of less than 200 Ω/□.
可选的，在所述导电籽晶层上形成金属导体层的方法，可选用电镀方法、浸镀方法以及真空溅射方法中的一种或多种。 Optionally, a method of forming a metal conductor layer on the conductive seed layer may be selected from one or more of a plating method, a immersion plating method, and a vacuum sputtering method.
可选的，所述金属导体层的厚度范围为1至100微米。Optionally, the metal conductor layer has a thickness ranging from 1 to 100 micrometers.
对应的，本发明还提供了一种制造带有金属化过孔的挠性覆铜板的方法，所述方法包括：Correspondingly, the present invention also provides a method of manufacturing a flexible copper clad laminate with metalized vias, the method comprising:
在挠性覆铜板上形成过孔结构；Forming a via structure on the flexible copper clad laminate;
采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性覆铜板的表面形成导电籽晶层；Forming a conductive seed layer on the pore walls of the pore structure and the surface of the flexible copper clad plate by a vacuum vapor deposition process;
在所述导电籽晶层上形成金属导体层。A metal conductor layer is formed on the conductive seed layer.
可选的，所述在挠性覆铜板上形成孔结构，可选用机械钻孔方法、冲孔方法、激光钻孔方法以及等离子体刻蚀方法中的一种或多种。Optionally, the hole structure is formed on the flexible copper clad plate, and one or more of a mechanical drilling method, a punching method, a laser drilling method, and a plasma etching method may be selected.
可选的，在所述导电籽晶层上形成金属导体层的方法，可选用电镀方法、浸镀方法、真空溅射方法中的一种或多种。Optionally, a method of forming a metal conductor layer on the conductive seed layer may be one or more of an electroplating method, a immersion plating method, and a vacuum sputtering method.
对应的，本发明还提供了一种柔性线路板的制作方法，所述方法包括本发明任意实施例提供的制造带有金属化过孔的挠性覆铜板的方法。Correspondingly, the present invention also provides a method of fabricating a flexible circuit board, the method comprising the method of manufacturing a flexible copper clad laminate with metalized vias provided by any embodiment of the present invention.
本发明提出了一种制造带有金属化过孔的挠性覆铜板的方法，能够直接在挠性有机薄膜上制造金属化过孔的同时，制造挠性覆铜板，简化了制造带有金属化过孔的挠性覆铜板的工序，提高了挠性覆铜板中金属化过孔的导电性能。The invention provides a method for manufacturing a flexible copper clad laminate with metalized vias, which can directly manufacture a metallized via on a flexible organic film, and manufacture a flexible copper clad laminate, which simplifies manufacturing and metallization. The process of the through-hole flexible copper clad laminate improves the electrical conductivity of the metallized vias in the flexible copper clad laminate.
附图说明DRAWINGS
图1是本发明第一实施例提供的制造带有金属化过孔的挠性覆铜板的方法的实现流程图；1 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a first embodiment of the present invention;
图2a-图2d是本发明实施例提供的制造带有金属化过孔的挠性覆铜板的方法步骤对应的结构图；2a-2d are structural views corresponding to the steps of a method for manufacturing a flexible copper clad laminate with metallized vias according to an embodiment of the present invention;
图3是本发明第二实施例提供的制造带有金属化过孔的挠性覆铜板的方法的实现流程图；3 is a flow chart showing an implementation of a method for manufacturing a flexible copper clad laminate with metalized vias according to a second embodiment of the present invention;
图4是本发明第三实施例提供的制造带有金属化过孔的挠性覆铜板的方法 的实现流程图。4 is a method of manufacturing a flexible copper clad laminate with metalized vias according to a third embodiment of the present invention; Implementation flow chart.
具体实施方式detailed description
为使本发明解决的技术问题、采用的技术方案和达到的技术效果更加清楚，下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部内容。In order to make the technical problems, the technical solutions, and the technical effects achieved by the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. It should also be noted that, for ease of description, only some, but not all, of the present invention are shown in the drawings.
第一实施例First embodiment
图1是本发明第一实施例提供的制造带有金属化过孔的挠性覆铜板的方法的实现流程图。如图1所示，本发明实施例提供的方法包括：1 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a first embodiment of the present invention. As shown in FIG. 1, the method provided by the embodiment of the present invention includes:
步骤101，在挠性有机薄膜上形成孔结构。In step 101, a pore structure is formed on the flexible organic film.
图2b是本发明实施例提供的制造带有金属化过孔的挠性覆铜板的方法在本步骤中对应的结构图。参照图2a和2b，在如图2a所示的挠性有机薄膜201上形成如图2b所示的孔结构211。FIG. 2b is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias according to an embodiment of the present invention. Referring to Figures 2a and 2b, a hole structure 211 as shown in Figure 2b is formed on the flexible organic film 201 as shown in Figure 2a.
优选的，所述挠性有机薄膜可以包括：聚酰亚胺(Polyimide，PI)薄膜、液晶聚合物(Liquid Crystal Polymer，LCP)薄膜、聚乙二酰脲(Polyparabanic Acid，PPA)薄膜、聚苯乙烯(Polystyrene，PS)薄膜、聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，PET)薄膜、聚四氟乙烯(Polytetrafluoroethylene，PTFE)薄膜或聚萘二甲酸乙二醇酯(Polyethylene Naphthalate，PEN)薄膜中的一种。Preferably, the flexible organic film may include: a polyimide (PI) film, a liquid crystal polymer (LCP) film, a polyparabanic acid (PPA) film, and a polyphenylene. Polystyrene (PS) film, polyethylene terephthalate (PET) film, polytetrafluoroethylene (PTFE) film or Polyethylene Naphthalate (PEN) One of the films.
优选的，所述孔结构211的形状可以为圆形或方形。Preferably, the shape of the hole structure 211 may be circular or square.
需要说明的是，本发明实施例中对孔结构的形状的不作具体限定，除了上述提供的圆形或方形外，也可以为其他形状。It should be noted that the shape of the hole structure is not specifically limited in the embodiment of the present invention, and other shapes may be used in addition to the circular or square shape provided above.
优选的，所述在挠性有机薄膜201上形成孔结构211的方法可以选用机械钻孔方法、冲孔方法、激光钻孔方法、等离子体刻蚀方法以及反应离子刻蚀方法中的一种或多种。其中，如果采用卷对卷的方式制造挠性电路板，则可以采用连续钻孔方式来形成孔结构211，比如连续冲孔或连续激光钻孔。其中，所述 激光钻孔采用的方法，可以选用红外激光钻孔方法、YAG激光钻孔方法和紫外激光钻孔方法等方法中的一种或多种。其中，为减小热影响区，防止过孔边缘受热损害，优选采用紫外激光钻孔的方法；如果是采用单联制造的方式制造挠性电路板，则优选使用机械钻孔或激光钻孔的方法来形成孔结构211。可选的，在挠性有机薄膜201上形成孔结构211之后，对孔结构211的孔洞进行清洁处理。Preferably, the method for forming the hole structure 211 on the flexible organic film 201 may be one of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method. A variety. Wherein, if the flexible circuit board is manufactured in a roll-to-roll manner, the continuous drilling method can be used to form the hole structure 211, such as continuous punching or continuous laser drilling. Wherein said The method used for laser drilling may be one or more of an infrared laser drilling method, a YAG laser drilling method, and an ultraviolet laser drilling method. In order to reduce the heat-affected zone and prevent the edge of the via from being damaged by heat, it is preferred to use an ultraviolet laser drilling method; if the flexible circuit board is manufactured by a single manufacturing method, it is preferable to use mechanical drilling or laser drilling. The method forms a pore structure 211. Alternatively, after the hole structure 211 is formed on the flexible organic film 201, the holes of the hole structure 211 are cleaned.
步骤102，在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成导电籽晶层。 Step 102, forming a conductive seed layer on the pore walls of the pore structure and the surface of the flexible organic film.
图2c是本发明实施例提供的制造带有金属化过孔的挠性覆铜板的方法，在本步骤中对应的结构图。参照图2c，在所述孔结构211的孔壁以及所述挠性有机薄膜201的表面形成导电籽晶层202。FIG. 2c is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias according to an embodiment of the present invention. Referring to FIG. 2c, a conductive seed layer 202 is formed on the cell walls of the hole structure 211 and the surface of the flexible organic film 201.
优选的，采用真空气相沉积工艺，在所述孔结构211的孔壁、以及所述挠性有机薄膜201的表面形成导电籽晶层。Preferably, a conductive seed layer is formed on the pore walls of the pore structure 211 and the surface of the flexible organic film 201 by a vacuum vapor deposition process.
其中，真空气相沉积工艺可以选用等离子体注入方式、等离子体沉积方式、溅射方式以及蒸发方式中的一种或多种。其中，优选的是溅射方式、等离子体注入方式或等离子体沉积方式中的一种或多种，这是由于它们产生的原子、离子、电子等微粒带有一定的能量飞向基体，可与挠性有机薄膜201形成良好的附着，且形成的导电籽晶层沉积物比较细腻、缺陷少，从而使之后形成的过孔导电性更好。采用真空气相沉积工艺，在所述孔结构211的孔壁以及所述挠性有机薄膜201的表面形成导电籽晶层202。导电籽晶层202的成分是导电材料，其中，所述导电材料包括但不限于各种金属、合金、碳、导电氧化物、导电碳化物和导电有机物，优选为与挠性有机薄膜201附着力强的金属与合金，如钛(Ti)、铬(Cr)、镍(Ni)、铜(Cu)、银(Ag)、金(Au)、锂(Li)、铍(Be)、镁(Mg)、铝(Al)、锰(Mn)、铁(Fe)、钻(Co)、锌(Zn)、镓(Ga)、锗(Ge)、碳(C)、硅(Si)、钇(Y)、钒(V)、锆(Zr)、钼(Mo)、钯(Pd)、镉(Cd)、铌(Nb)、铟(工n)、锡(Sn)、锑(Sb)、碲(Te)、钡(Ba)、钽(Ta)、钨(W)、铂(Pt)、铊(Tl)、铅(Pb)、铋(Bi)以及它们的二元、三元和四元合金。The vacuum vapor deposition process may select one or more of a plasma injection method, a plasma deposition method, a sputtering method, and an evaporation method. Among them, one or more of a sputtering method, a plasma implantation method, or a plasma deposition method is preferable because the particles, ions, electrons, and the like generated by the particles have a certain amount of energy flying toward the substrate, and The flexible organic film 201 forms a good adhesion, and the formed conductive seed layer deposit is relatively fine and has few defects, so that the via holes formed later are more conductive. A conductive seed layer 202 is formed on the pore walls of the pore structure 211 and the surface of the flexible organic thin film 201 by a vacuum vapor deposition process. The composition of the conductive seed layer 202 is a conductive material, wherein the conductive material includes, but is not limited to, various metals, alloys, carbon, conductive oxides, conductive carbides, and conductive organics, preferably adhesion to the flexible organic film 201. Strong metals and alloys such as titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), silver (Ag), gold (Au), lithium (Li), bismuth (Be), magnesium (Mg ), aluminum (Al), manganese (Mn), iron (Fe), diamond (Co), zinc (Zn), gallium (Ga), germanium (Ge), carbon (C), silicon (Si), germanium (Y) ), vanadium (V), zirconium (Zr), molybdenum (Mo), palladium (Pd), cadmium (Cd), niobium (Nb), indium (work n), tin (Sn), antimony (Sb), antimony ( Te), barium (Ba), tantalum (Ta), tungsten (W), platinum (Pt), tantalum (Tl), lead (Pb), tantalum (Bi) and their binary, ternary and quaternary alloys.
优选的，所述导电籽晶层202的厚度范围为1至1000纳米。Preferably, the conductive seed layer 202 has a thickness ranging from 1 to 1000 nm.
优选的，所述导电籽晶层202的方块电阻小于200Ω/□。 Preferably, the conductive seed layer 202 has a sheet resistance of less than 200 Ω/□.
步骤103，在所述导电籽晶层上形成金属导体层。 Step 103, forming a metal conductor layer on the conductive seed layer.
图2d是本发明实施例提供的制造带有金属化过孔的挠性覆铜板的方法在本步骤中对应的结构图。参照图2d，在所述导电籽晶层202上形成金属导体层203。2d is a corresponding structural diagram of a method for manufacturing a flexible copper clad laminate with metalized vias provided in an embodiment of the present invention. Referring to FIG. 2d, a metal conductor layer 203 is formed on the conductive seed layer 202.
优选的，在所述导电籽晶层202上形成金属导体层203的方法，可选用电镀方法、浸镀方法以及真空溅射方法中的一种或多种。其中，电镀方法具有电镀材料范围广、镀速较快、且成本低的特点，电镀采用的材料可以包括Cu、Ni、Sn、Au、Ag、Pt、Pd及它们的二元和三元合金；Preferably, a method of forming the metal conductor layer 203 on the conductive seed layer 202 may be one or more of a plating method, a immersion plating method, and a vacuum sputtering method. Among them, the electroplating method has the characteristics of wide plating material, fast plating speed and low cost, and the materials used for electroplating may include Cu, Ni, Sn, Au, Ag, Pt, Pd and their binary and ternary alloys;
浸镀方法具有操作方便，但镀金属导体层的合金选择范围较窄的特点，采用浸镀的方法可以镀上低熔点的钎料合金，比如熔点小于400摄氏度的各种软钎料合金，如Sn、锡铅(SnPb)合金、锡银铜(SnAgCu)合金、锡铜(SnCu)合金、金锡(AuSn)合金；真空溅射方法具有溅射速度快的特点，针对一些导电材料，特别是金属和合金，如Al、Cu、Ag、Sn、Ni、Au等及它们的合金，溅射的速度可以达到100nm/min，因而可采用真空溅射的方法来快速镀覆金属导体层。The immersion plating method has the advantages of convenient operation, but the alloy selection of the metal-plated conductor layer is narrow, and the immersion plating method can be used to plate the low-melting solder alloy, such as various solder alloys having a melting point of less than 400 degrees Celsius, such as Sn, tin-lead (SnPb) alloy, tin-silver-copper (SnAgCu) alloy, tin-copper (SnCu) alloy, gold-tin (AuSn) alloy; vacuum sputtering method has the characteristics of high sputtering speed, especially for some conductive materials, especially Metals and alloys, such as Al, Cu, Ag, Sn, Ni, Au, etc., and alloys thereof can be sputtered at a rate of 100 nm/min, so vacuum sputtering can be used to rapidly plate the metal conductor layer.
优选的，所述金属导体层203的厚度范围为1至100微米。Preferably, the metal conductor layer 203 has a thickness ranging from 1 to 100 micrometers.
与现有技术相比，本发明实施例能够直接在挠性有机薄膜上制造金属化过孔的同时制造挠性覆铜板，针对工业生产更具价值。如果制造企业采用本发明实施例提供的方法，在实际生产中可以不需要采购挠性覆铜板，可以直接采购挠性有机薄膜，进而在挠性有机薄膜上制造金属化过孔的同时，制造挠性覆铜板。这样的话既减少挠性覆铜板的制造成本、又简化制造带有金属化过孔的挠性覆铜板的工序。Compared with the prior art, the embodiments of the present invention are capable of manufacturing a flexible copper clad laminate while manufacturing metallized via holes directly on a flexible organic film, which is more valuable for industrial production. If the manufacturing enterprise adopts the method provided by the embodiment of the present invention, it is not necessary to purchase the flexible copper-clad board in actual production, and the flexible organic film can be directly purchased, and the metallized via hole is manufactured on the flexible organic film, and the manufacturing is scratched. Spherical copper clad laminate. In this way, the manufacturing cost of the flexible copper clad laminate is reduced, and the process of manufacturing the flexible copper clad laminate with metalized via holes is simplified.
下面以实例的形式对本实施例提供的方案进行说明：The solution provided by this embodiment is described by way of example:
例如，对准备好的成卷的挠性有机薄膜，可以采用机械钻孔的方法和紫外激光钻孔的方法，按照柔性电路板的要求，进行连续钻孔，以在挠性有机薄膜上形成过孔结构。孔结构的孔径最小可以是25μm，孔结构可以是方孔或圆孔，也可以是其它形状的孔结构；进一步的，采用真空“离子注入+等离子体沉积”的方式，在所述孔结构的孔壁，以及所述挠性有机薄膜的表面，形成10nm的Cr层，作为导电籽晶层，Cr层的方块电阻小于100Ω/□(欧姆每方)；进一步的，利用连续电镀设备，在所述导电籽晶层上，电镀1至18μm的Cu层，作为金属 导体层。此时，就在挠性有机薄膜的基础上形成了带有金属化过孔的挠性覆铜板。For example, for a prepared coiled flexible organic film, a mechanical drilling method and an ultraviolet laser drilling method can be employed, and continuous drilling is performed according to the requirements of the flexible circuit board to form on the flexible organic film. Hole structure. The pore structure may have a pore size of at least 25 μm, the pore structure may be a square hole or a round hole, or may be a pore structure of other shapes; further, a vacuum "ion implantation + plasma deposition" method in which the pore structure is a hole wall, and a surface of the flexible organic film, forming a 10 nm Cr layer as a conductive seed layer, the Cr layer has a sheet resistance of less than 100 Ω/□ (ohms per square); further, using continuous plating equipment, On the conductive seed layer, a Cu layer of 1 to 18 μm is plated as a metal Conductor layer. At this time, a flexible copper clad laminate with metalized via holes was formed on the basis of the flexible organic film.
或者例如，对准备好的成卷的并附着卷带式掩膜的挠性有机薄膜，采用等离子体刻蚀的方式并且通过卷带式掩膜，按照柔性电路板的要求，而在挠性有机薄膜上连续蚀刻出孔结构，孔结构的孔径最小可以是25μm，孔结构可以是方孔、圆孔或者其它形状；进一步的，采用真空溅射的方式，在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成10至100nm的镍铬(NiCr)合金层，作为导电籽晶层，NiCr合金层的方块电阻小于100Ω/□；进一步的，利用连续电镀设备，在所述导电籽晶层上，电镀1至18μm的Cu层，作为金属导体层。此时，就在挠性有机薄膜上形成了带有金属化过孔的挠性覆铜板。Or, for example, a flexible organic film prepared in a roll and attached to a tape-type mask is plasma etched and passed through a tape-and-reel mask, in accordance with the requirements of the flexible circuit board, and in a flexible organic The pore structure is continuously etched on the film, the pore structure of the pore structure may be at least 25 μm, the pore structure may be a square hole, a circular hole or other shapes; further, by vacuum sputtering, the pore wall of the pore structure and the The surface of the flexible organic film forms a nickel-chromium (NiCr) alloy layer of 10 to 100 nm, and as a conductive seed layer, the sheet resistance of the NiCr alloy layer is less than 100 Ω/□; further, using a continuous plating apparatus, the conductive seed On the crystal layer, a Cu layer of 1 to 18 μm was plated as a metal conductor layer. At this time, a flexible copper clad laminate having metalized via holes was formed on the flexible organic film.
本实施例提供的制造带有金属化过孔的挠性覆铜板的方法，能够直接在挠性有机薄膜上制造金属化过孔的同时制造挠性覆铜板，简化了制造带有金属化过孔的挠性覆铜板的工序，提高了挠性覆铜板中金属化过孔的导电性能。因此本发明在工业上具有良好的应用前景，而本发明的技术也便于推广应用。The method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment can directly manufacture a flexible copper clad laminate while manufacturing metallized via holes on the flexible organic thin film, thereby simplifying the manufacture of the metallized via holes. The process of the flexible copper clad laminate improves the electrical conductivity of the metallized vias in the flexible copper clad laminate. Therefore, the present invention has a good application prospect in the industry, and the technology of the present invention is also convenient for popularization and application.
本发明实施例还提供了一种挠性电路板的制作方法，所述挠性电路板的制作方法包括制造带有金属化过孔的挠性覆铜板的方法，其中，所述制造带有金属化过孔的挠性覆铜板的方法，采用本发明任意实施例提供的制造带有金属化过孔的挠性覆铜板的方法。Embodiments of the present invention also provide a method of fabricating a flexible circuit board, the method of fabricating the flexible circuit board comprising the method of manufacturing a flexible copper clad laminate with metalized vias, wherein the manufacturing is performed with a metal A method of forming a flexible copper clad laminate of a via, using a method of fabricating a flexible copper clad laminate with metalized vias provided by any of the embodiments of the present invention.
第二实施例Second embodiment
图3是本发明第二实施例提供的制造带有金属化过孔的挠性覆铜板的方法的实现流程图。如图3所示，本发明实施例提供的方法包括：3 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a second embodiment of the present invention. As shown in FIG. 3, the method provided by the embodiment of the present invention includes:
步骤301，在挠性有机薄膜上形成孔结构。In step 301, a pore structure is formed on the flexible organic film.
优选的，所述挠性有机薄膜可以包括：聚酰亚胺薄膜、液晶聚合物薄膜、聚乙二酰脲薄膜、聚苯乙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚四氟乙烯薄膜或聚萘二甲酸乙二醇酯薄膜。Preferably, the flexible organic film may include: a polyimide film, a liquid crystal polymer film, a polyurea film, a polystyrene film, a polyethylene terephthalate film, a polytetrafluoroethylene Film or polyethylene naphthalate film.
优选的，所述孔结构的形状为圆形或方形。Preferably, the shape of the pore structure is circular or square.
优选的，所述在挠性有机薄膜上形成孔结构的方法，可选用机械钻孔方法、冲孔方法、激光钻孔方法以及等离子体刻蚀方法中的一种或多种。 Preferably, the method for forming a pore structure on the flexible organic film may be one or more selected from the group consisting of a mechanical drilling method, a punching method, a laser drilling method, and a plasma etching method.
步骤302，采用真空气相沉积工艺，在所述孔结构的孔壁、以及所述挠性有机薄膜的表面，形成导电籽晶层。 Step 302, forming a conductive seed layer on the pore wall of the pore structure and the surface of the flexible organic film by a vacuum vapor deposition process.
优选的，所述导电籽晶层的厚度范围为1至1000纳米。Preferably, the conductive seed layer has a thickness ranging from 1 to 1000 nm.
优选的，所述导电籽晶层的方块电阻小于200Ω/□。Preferably, the conductive seed layer has a sheet resistance of less than 200 Ω/□.
与现有技术采用化学镀铜或黑孔工艺形成导电层的相比，上述方案采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成导电籽晶层，缩短了形成导电籽晶层的时间，简化了导电籽晶层的制造工序，且所形成的导电籽晶层附着力佳、干净无污染，从而使之后形成的过孔导电性更好。Compared with the prior art, the electroless copper plating or black hole process is used to form the conductive layer, the above solution adopts a vacuum vapor deposition process to form a conductive seed layer on the hole wall of the hole structure and the surface of the flexible organic film. The time for forming the conductive seed layer is shortened, the manufacturing process of the conductive seed layer is simplified, and the formed conductive seed layer has good adhesion, clean and no pollution, so that the via formed later has better conductivity.
步骤303，在所述导电籽晶层上形成金属导体层。 Step 303, forming a metal conductor layer on the conductive seed layer.
优选的，所述在所述导电籽晶层上形成金属导体层的方法，可选用电镀方法、浸镀方法以及溅射方法中的一种或多种。Preferably, the method of forming a metal conductor layer on the conductive seed layer may be selected by one or more of a plating method, a immersion plating method, and a sputtering method.
优选的，所述金属导体层的厚度范围为1至100微米。Preferably, the metal conductor layer has a thickness ranging from 1 to 100 micrometers.
本实施例提供的制造带有金属化过孔的挠性覆铜板的方法，通过采用真空气相沉积工艺，在孔结构的孔壁以及挠性有机薄膜的表面，形成导电籽晶层，进而在导电籽晶层上形成金属导体层，能够提高了挠性覆铜板中金属化过孔的导电性能。The method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment provides a conductive seed layer on the pore walls of the pore structure and the surface of the flexible organic film by using a vacuum vapor deposition process, thereby conducting electricity The formation of a metal conductor layer on the seed layer can improve the electrical conductivity of the metallized vias in the flexible copper clad laminate.
第三实施例Third embodiment
图4是本发明第三实施例提供的制造带有金属化过孔的挠性覆铜板的方法的实现流程图。如图4所示，本发明实施例提供的方法包括：4 is a flow chart showing an implementation of a method of manufacturing a flexible copper clad laminate with metalized vias according to a third embodiment of the present invention. As shown in FIG. 4, the method provided by the embodiment of the present invention includes:
步骤401，在挠性覆铜板上形成孔结构。In step 401, a hole structure is formed on the flexible copper clad laminate.
优选的，所述在挠性覆铜板上形成孔结构的方法，可选用机械钻孔方法、冲孔方法、激光钻孔方法、等离子体刻蚀方法以及反应离子刻蚀方法中的一种或多种。Preferably, the method for forming a hole structure on the flexible copper clad plate may be one or more of a mechanical drilling method, a punching method, a laser drilling method, a plasma etching method, and a reactive ion etching method. Kind.
步骤402，采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性覆铜板的表面，形成导电籽晶层。 Step 402, forming a conductive seed layer on the hole wall of the hole structure and the surface of the flexible copper clad plate by a vacuum vapor deposition process.
与现有技术采用化学镀铜或黑孔工艺形成导电层的相比，上述方案采用真空气相沉积工艺在挠性覆铜板的孔结构的孔壁，以及所述挠性覆铜板的表面，形成导电籽晶层，形成的导电籽晶层附着力佳、干净无污染，且缩短了形成导 电籽晶层的时间，简化了导电籽晶层的制造工序，进而提高了挠性覆铜板中金属化过孔的导电性能。Compared with the prior art, the electroless copper plating or black hole process is used to form the conductive layer, the above solution adopts a vacuum vapor deposition process to form a conductive layer on the hole wall of the hole structure of the flexible copper clad plate and the surface of the flexible copper clad plate. The seed layer, the formed conductive seed layer has good adhesion, clean and pollution-free, and shortens the formation of the guide The time of the seed layer simplifies the manufacturing process of the conductive seed layer, thereby improving the electrical conductivity of the metallized via in the flexible copper clad laminate.
步骤403，在所述导电籽晶层上形成金属导体层。 Step 403, forming a metal conductor layer on the conductive seed layer.
优选的，所述在所述导电籽晶层上形成金属导体层的方法，可选用电镀方法、浸镀方法以及溅射方法构成的组中的一种或多种。Preferably, the method of forming a metal conductor layer on the conductive seed layer may be one or more selected from the group consisting of a plating method, a immersion plating method, and a sputtering method.
下面以实例的形式对本实施例提供的方案进行说明：The solution provided by this embodiment is described by way of example:
例如，对准备好的成卷的挠性覆铜板，采用机械钻孔的方法和紫外激光钻孔的方法进行连续钻孔，以在挠性覆铜板上形成孔结构，孔结构的孔径最小可以是25μm，孔结构可以是方孔、圆孔或者其它形状；进一步的，采用连续的等离子体轰击方式，进行孔洞除胶和表面清洁；进一步的，采用真空离子注入+等离子体沉积的方式，在所述孔结构的孔壁以及所述挠性覆铜板的表面，形成10nm的Cr层和100nm的Cu层，作为导电籽晶层；进一步的，利用连续电镀设备，在所述导电籽晶层上，电镀1至18μm的Cu层，作为金属导体层。此时，就形成了带有金属化过孔的挠性覆铜板。For example, for a prepared coiled flexible copper clad plate, a continuous drilling method is performed by a mechanical drilling method and an ultraviolet laser drilling method to form a hole structure on the flexible copper clad plate, and the pore size of the hole structure may be at least 25μm, the pore structure can be a square hole, a round hole or other shapes; further, continuous plasma bombardment is used to perform hole removal and surface cleaning; further, vacuum ion implantation + plasma deposition is used. a hole wall of the pore structure and a surface of the flexible copper clad plate, forming a 10 nm Cr layer and a 100 nm Cu layer as a conductive seed layer; further, using a continuous plating apparatus on the conductive seed layer A Cu layer of 1 to 18 μm was electroplated as a metal conductor layer. At this time, a flexible copper clad laminate with metalized via holes is formed.
或者例如，将准备好的方形的挠性覆铜板进行叠层，并在挠性覆铜板的两面贴附2mm的电木板进行绑定，采用机械钻孔的方式，在挠性覆铜板上形成孔结构，孔结构的孔径最小可以是50μm；进一步的，将挠性覆铜板分离成为单联，并对孔结构的孔洞进行除胶处理；进一步的，采用真空溅射的方式，在挠性覆铜板的孔壁以及所述挠性覆铜板的表面，形成100nm的Cu层，作为导电籽晶层，；进一步的，利用单联挂镀，在所述导电籽晶层上，电镀1至18μm的Cu层，作为金属导体层。此时，就形成了带有金属化过孔的挠性覆铜板。Or, for example, a prepared rectangular flexible copper clad laminate is laminated, and 2 mm of electric bakelite is attached to both sides of the flexible copper clad laminate for bonding, and a hole is formed in the flexible copper clad plate by mechanical drilling. The structure, the pore size of the pore structure may be at least 50 μm; further, the flexible copper clad laminate is separated into a single joint, and the pore structure of the pore structure is degreased; further, vacuum sputtering is used in the flexible copper clad laminate a hole wall and a surface of the flexible copper clad plate, forming a 100 nm Cu layer as a conductive seed layer; further, plating a 1 to 18 μm Cu on the conductive seed layer by a single hanging plating Layer as a metal conductor layer. At this time, a flexible copper clad laminate with metalized via holes is formed.
或者例如，将准备好的方形的挠性覆铜板进行激光钻孔，以在挠性覆铜板上形成孔结构，孔结构的孔径最小可以是50μm；进一步的，将它们分离成为单联，并对孔结构的孔洞进行除胶处理；进一步的，采用真空溅射的方式，在挠性覆铜板的孔壁以及所述挠性覆铜板的表面，形成200nm的Ni层，作为导电籽晶层；进一步的，对挠性覆铜板涂覆液态感光油墨(或者粘贴感光膜)，并且曝光显影露出孔结构的部位；进一步的，再利用单联浸镀(如浸入锡铜(SnCu)、锡银铜(SnAgCu)液态合金槽)，在所述导电籽晶层上形成镀锡层，作为金属导 体层。此时，就形成了带有金属化过孔的挠性覆铜板。Or, for example, laser-drilling a prepared square flexible copper clad laminate to form a pore structure on the flexible copper clad laminate, the pore structure having a pore size of at least 50 μm; further, separating them into a single unit, and The pores of the pore structure are subjected to a degumming treatment; further, vacuum sputtering is used to form a 200 nm Ni layer on the pore walls of the flexible copper clad laminate and the surface of the flexible copper clad laminate as a conductive seed layer; further Applying a liquid photosensitive ink (or a photosensitive film) to the flexible copper clad laminate, and exposing the exposed portion of the pore structure; further, using a single immersion plating (such as immersion in tin-copper (SnCu), tin-silver-copper ( SnAgCu) liquid alloy bath), forming a tin plating layer on the conductive seed layer as a metal guide Body layer. At this time, a flexible copper clad laminate with metalized via holes is formed.
本实施例提供的制造带有金属化过孔的挠性覆铜板的方法，通过在挠性覆铜板上形成孔结构，采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性覆铜板的表面，形成导电籽晶层，进而在导电籽晶层上形成金属导体层，能够简化导电籽晶层的制造工序，进而提高挠性覆铜板中金属化过孔的导电性能。The method for manufacturing a flexible copper clad laminate with metalized vias provided by the embodiment, by forming a hole structure on the flexible copper clad plate, using a vacuum vapor deposition process, the hole wall of the hole structure, and the flexibility The surface of the copper clad plate forms a conductive seed layer, and a metal conductor layer is formed on the conductive seed layer, which simplifies the manufacturing process of the conductive seed layer and further improves the electrical conductivity of the metallized via in the flexible copper clad laminate.
注意，上述内容仅为本发明的较佳实施例。本领域技术人员会理解，本发明不限于这里所述的特定实施例，对本领域技术人员来说，能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其它等效实施例，而本发明的范围由所附的权利要求范围决定。 Note that the above is only a preferred embodiment of the present invention. Those skilled in the art will appreciate that the invention is not limited to the specific embodiments described herein, and that various modifications, changes and substitutions can be made without departing from the scope of the invention. Therefore, the present invention has been described in detail by the above embodiments, but the present invention is not limited to the above embodiments, and other equivalent embodiments may be included without departing from the inventive concept. The scope is determined by the scope of the appended claims.

Claims (13)

  1. 一种制造带有金属化过孔的挠性覆铜板的方法，其特征在于，包括：A method of manufacturing a flexible copper clad laminate with metalized vias, comprising:
    在挠性有机薄膜上形成孔结构；Forming a pore structure on the flexible organic film;
    在所述孔结构的孔壁以及所述挠性有机薄膜的表面，形成导电籽晶层；Forming a conductive seed layer on the pore wall of the pore structure and the surface of the flexible organic film;
    在所述导电籽晶层上形成金属导体层。A metal conductor layer is formed on the conductive seed layer.
  2. 根据权利要求1所述的方法，其特征在于，所述挠性有机薄膜包括：聚酰亚胺薄膜、液晶聚合物薄膜、聚乙二酰脲薄膜、聚苯乙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚四氟乙烯薄膜或聚萘二甲酸乙二醇酯薄膜中的一种或多种。The method according to claim 1, wherein the flexible organic film comprises: a polyimide film, a liquid crystal polymer film, a polyurea film, a polystyrene film, and polyethylene terephthalate. One or more of a glycol ester film, a polytetrafluoroethylene film or a polyethylene naphthalate film.
  3. 根据权利要求1所述的方法，其特征在于，所述孔结构的形状为圆形、方形或其它形状。The method of claim 1 wherein the aperture structure has a circular, square or other shape.
  4. 根据权利要求1-3任一项所述的方法，其特征在于，所述在挠性有机薄膜上形成孔结构的方法，选用机械钻孔方法、冲孔方法、激光钻孔方法、等离子体刻蚀方法以及反应离子刻蚀方法中的一种或多种。The method according to any one of claims 1 to 3, wherein the method for forming a pore structure on the flexible organic film comprises a mechanical drilling method, a punching method, a laser drilling method, and a plasma engraving One or more of an etching method and a reactive ion etching method.
  5. 根据权利要求1所述的方法，其特征在于，采用真空气相沉积工艺在所述孔结构的孔壁以及所述挠性有机薄膜的表面形成导电籽晶层。The method according to claim 1, wherein a conductive seed layer is formed on the pore walls of the pore structure and the surface of the flexible organic film by a vacuum vapor deposition process.
  6. 根据权利要求1或5所述的方法，其特征在于，所述导电籽晶层的厚度范围为1至1000纳米。The method according to claim 1 or 5, wherein the conductive seed layer has a thickness ranging from 1 to 1000 nm.
  7. 根据权利要求1或5所述的方法，其特征在于，所述导电籽晶层的方块电阻小于200Ω/□。The method according to claim 1 or 5, wherein the conductive seed layer has a sheet resistance of less than 200 Ω/□.
  8. 根据权利要求1所述的方法，其特征在于，所述在所述导电籽晶层上形成金属导体层的方法，选用电镀方法、浸镀方法以及溅射方法中的一种或多种。The method according to claim 1, wherein the method of forming a metal conductor layer on the conductive seed layer comprises one or more of an electroplating method, a immersion plating method, and a sputtering method.
  9. 根据权利要求1或8所述的方法，其特征在于，所述金属导体层的厚度范围为1至100微米。The method according to claim 1 or 8, wherein the metal conductor layer has a thickness ranging from 1 to 100 μm.
  10. 一种制造带有金属化过孔的挠性覆铜板的方法，其特征在于，包括：A method of manufacturing a flexible copper clad laminate with metalized vias, comprising:
    在挠性覆铜板上形成孔结构；Forming a hole structure on the flexible copper clad laminate;
    采用真空气相沉积工艺，在所述孔结构的孔壁以及所述挠性覆铜板的表面，形成导电籽晶层；Forming a conductive seed layer on the pore wall of the pore structure and the surface of the flexible copper clad plate by a vacuum vapor deposition process;
    在所述导电籽晶层上，形成金属导体层。On the conductive seed layer, a metal conductor layer is formed.
  11. 根据权利要求10所述的方法，其特征在于，所述在挠性覆铜板上形成 的孔结构，选用机械钻孔方法、冲孔方法、激光钻孔方法以及等离子体刻蚀方法中的一种或多种。The method of claim 10 wherein said forming on a flexible copper clad laminate The hole structure is selected from one or more of a mechanical drilling method, a punching method, a laser drilling method, and a plasma etching method.
  12. 根据权利要求10或11所述的方法，其特征在于，所述在所述导电籽晶层上形成金属导体层的方法，选用电镀方法、浸镀方法以及溅射方法等方法中的一种或多种。The method according to claim 10 or 11, wherein the method of forming a metal conductor layer on the conductive seed layer is performed by one of a plating method, a immersion plating method, and a sputtering method. A variety.
  13. 一种柔性线路板的制作方法，包括权利要求1至12任一项所述的制造带有金属化过孔的挠性覆铜板的方法。 A method of fabricating a flexible wiring board comprising the method of manufacturing a flexible copper clad laminate having metallized vias according to any one of claims 1 to 12.
PCT/CN2015/071762 2014-04-04 2015-01-28 Method for manufacturing flexible copper clad laminate with metalized through-hole WO2015149580A1 (en)

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