WO2015050164A1 - 発光装置用基板、発光装置、および、発光装置用基板の製造方法 - Google Patents
発光装置用基板、発光装置、および、発光装置用基板の製造方法 Download PDFInfo
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- WO2015050164A1 WO2015050164A1 PCT/JP2014/076296 JP2014076296W WO2015050164A1 WO 2015050164 A1 WO2015050164 A1 WO 2015050164A1 JP 2014076296 W JP2014076296 W JP 2014076296W WO 2015050164 A1 WO2015050164 A1 WO 2015050164A1
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- Prior art keywords
- emitting device
- insulating layer
- light emitting
- light
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 259
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 118
- 238000005530 etching Methods 0.000 claims abstract description 114
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 95
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000010410 layer Substances 0.000 claims description 300
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 66
- 229910052802 copper Inorganic materials 0.000 claims description 66
- 239000010949 copper Substances 0.000 claims description 66
- 239000003822 epoxy resin Substances 0.000 claims description 56
- 229920000647 polyepoxide Polymers 0.000 claims description 56
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 46
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 239000011241 protective layer Substances 0.000 claims description 41
- 238000001579 optical reflectometry Methods 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 28
- 239000011230 binding agent Substances 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 18
- 239000003973 paint Substances 0.000 claims description 17
- 229920002050 silicone resin Polymers 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 60
- 238000000034 method Methods 0.000 description 35
- 239000000126 substance Substances 0.000 description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 19
- 238000010292 electrical insulation Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 14
- 238000007789 sealing Methods 0.000 description 12
- 238000010304 firing Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000004519 grease Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000005524 ceramic coating Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- 102100032047 Alsin Human genes 0.000 description 2
- 101710187109 Alsin Proteins 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910003480 inorganic solid Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/045—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by making a conductive layer having a relief pattern, followed by abrading of the raised portions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Definitions
- the present invention relates to a light emitting device substrate provided with an insulating layer on a metal substrate portion including a base made of a metal material, a light emitting device using the same, and a method for manufacturing the light emitting device substrate.
- an electronic device having an electronic circuit board is known.
- the electronic circuit board is provided with electronic elements such as light emitting elements and thermoelectric elements typified by LEDs (Light Emitting Diodes).
- Patent Document 1 discloses a technique in which a ceramic coating is applied to a base and fired to form a coating on the base.
- the conventionally used ceramic substrate does not have good thermal conductivity. For this reason, in a light emitting device, it is necessary to use a metal substrate having a higher thermal conductivity than a conventionally used ceramic substrate.
- an insulating layer in order to mount a light emitting element on a metal substrate, an insulating layer must be provided on the metal substrate in order to form a wiring pattern.
- the insulating layer in order to improve the light utilization efficiency in the light emitting device, the insulating layer needs to have high light reflectivity in addition to high thermal conductivity.
- an organic resist conventionally used as an insulating layer in an electronic circuit board of a light-emitting device cannot obtain sufficient thermal conductivity, heat resistance, and light resistance.
- Patent Document 1 does not mention heat dissipation and light utilization efficiency.
- the present invention has been made in view of the above problems, and its object is to provide a substrate for a light emitting device capable of realizing high heat dissipation and high light utilization efficiency, a light emitting device using the same, And it is providing the manufacturing method of the board
- a light-emitting device substrate includes a metal substrate portion having at least a metal substrate, and a thermal conductivity formed on the metal substrate portion.
- a first insulating layer comprising: a wiring pattern formed on the first insulating layer; and a second light-reflective second layer formed on the first insulating layer and the wiring pattern. And an insulating layer.
- a light-emitting device substrate includes a metal substrate portion having at least a metal substrate, and a heat formed on the metal substrate portion.
- the semiconductor device includes an insulating layer having conductivity and light reflectivity, and a wiring pattern embedded in the insulating layer.
- a light-emitting device is formed over the light-emitting device substrate and the second insulating layer of the light-emitting device substrate, and the wiring pattern And a light emitting element electrically connected to each other.
- a light-emitting device is formed over the light-emitting device substrate and the insulating layer of the light-emitting device substrate, and is electrically connected to the wiring pattern. And a light emitting element connected to the light emitting element.
- a method for manufacturing a substrate for a light-emitting device includes forming an alumite protective layer by anodizing a substrate made of aluminum, and forming a metal substrate.
- a composite sheet obtained by laminating a step of producing a part, an epoxy resin containing ceramic particles and improved thermal conductivity into a sheet, and a metal sheet made of copper.
- a second insulating layer having a thermal conductivity lower than that of the first insulating layer and having a light reflectivity higher than that of the first insulating layer is formed by coating;
- FIG. 1 shows schematic structure of the light-emitting device which concerns on one embodiment of this invention. It is sectional drawing which shows the manufacturing method of the light-emitting device shown in FIG. 1, and has shown the process of forming a high thermal radiation ceramic layer on an aluminum substrate. It is sectional drawing which shows the manufacturing method of the light-emitting device shown in FIG. 1, and has shown the process of affixing an etching flame
- FIG. 8 is a cross-sectional view showing a method for manufacturing the light emitting device shown in FIG. 7, showing a step of providing a PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer) sheet on an aluminum substrate.
- PFA tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer
- FIG. 12 It is sectional drawing which shows the manufacturing method of the light-emitting device shown in FIG. 12, and has shown the process of electrically connecting a LED chip and an etching flame
- FIG. 25 It is sectional drawing which shows the manufacturing method of the light-emitting device shown in FIG. 25, and has shown the process of forming an inorganic resist layer on an epoxy resin sheet and an etching flame
- FIG. 1 is a cross-sectional view showing a schematic configuration of the light emitting device according to the present embodiment.
- the aluminum substrate 1, the high heat dissipation ceramic layer 2, the etching frame 3, and the high reflection ceramic layer 4 correspond to a light emitting device substrate.
- the aluminum substrate (metal substrate portion) 1 is a substrate having high thermal conductivity. Instead of the aluminum substrate 1, a copper substrate having a high thermal conductivity may be used.
- the aluminum substrate 1 is advantageous in that it is inexpensive, easy to process, and strong against atmospheric humidity.
- the outer shape of the aluminum substrate 1 is not particularly limited.
- the high heat dissipation ceramic layer (first insulating layer) 2 is formed on the aluminum substrate 1. It can be said that the high heat dissipation ceramic layer 2 is provided on one surface side of the aluminum substrate 1.
- the high heat dissipation ceramic layer 2 is formed by drying and firing a high heat dissipation ceramic coating 12 (see FIG. 2) applied to the aluminum substrate 1 by a printing method.
- the high heat dissipation ceramic layer 2 has electrical insulation and high thermal conductivity, and may have high light reflectivity.
- Specific examples of the high heat dissipation ceramic paint 12 include an aluminum nitride ceramic paint, an alumina ceramic paint, and a zirconia ceramic paint, but are not limited thereto, as long as they have electrical insulation and high thermal conductivity. Good.
- a glass-based raw material containing a siloxane bond that synthesizes glass by a sol-gel method or the like, or a resin raw material is used as a raw material of the binder mixed with these coating materials.
- Etching frame (wiring pattern) 3 (see FIG. 3) is a wiring pattern formed by etching a thin plate made of, for example, copper.
- the etching frame 3 is formed on the high heat dissipation ceramic layer 2.
- the high reflection ceramic layer (second insulating layer) 4 is formed on the high heat dissipation ceramic layer 2 and the etching frame 3.
- the high reflection ceramic layer 4 is formed by drying and firing a high reflection ceramic paint 14 (see FIG. 4) applied to the high heat dissipation ceramic layer 2 and the etching frame 3 by a printing method (see FIG. 4). 5).
- the highly reflective ceramic layer 4 has electrical insulation and high light reflectivity.
- Specific examples of the highly reflective ceramic paint 14 include zirconia-based ceramic paints, but are not limited thereto, as long as they have electrical insulation and high light reflectivity.
- the binder of the highly reflective ceramic layer 4 may be a glass-based binder containing a siloxane bond synthesized by a sol-gel method or a resin.
- the drying and firing temperature of the highly reflective ceramic layer 4 is preferably lower than the drying and firing temperature of the high heat dissipation ceramic layer 2.
- a resin binder is used for the high heat dissipation ceramic layer 2 and a glass binder synthesized by a sol-gel method is used for the high reflection ceramic layer 4. Drying and firing of the glass-based binder synthesized by the sol-gel method is usually performed at a high temperature of 250 ° C to 500 ° C.
- the curing temperature and heat-resistant temperature of the thermosetting resin are usually 200 ° C. or less, when using a resin binder for the high heat dissipation ceramic layer 2, it is necessary to pay attention to its heat resistance.
- the LED chip (light emitting element) 5 is packaged and electrically connected to the etching frame 3 by flip chip bonding. Although two LED chips 5 are shown in FIG. 1, the number of LED chips 5 is not limited to this.
- FIG. 2 to 6 are cross-sectional views showing a method for manufacturing the light emitting device 100.
- FIG. 2 to 6 are cross-sectional views showing a method for manufacturing the light emitting device 100.
- a high heat dissipation ceramic coating 12 is printed on the aluminum substrate 1, dried and fired to form the high heat dissipation ceramic layer 2.
- the thickness of the high heat dissipation ceramic layer 2 is preferably 25 ⁇ m or more and 150 ⁇ m or less. Thereby, the aluminum substrate 1 and the etching frame 3 can be reliably insulated while suppressing generation of cracks in the high heat dissipation ceramic layer 2.
- an etching frame 3 is pasted on the high heat dissipation ceramic layer 2 as shown in FIG.
- a highly reflective ceramic coating 14 is printed on the high heat dissipation ceramic layer 2 and the etching frame 3, dried and fired to form a highly reflective ceramic layer 4.
- FIG. 6 shows a state where the polishing is completed.
- the connection portion (electrode terminal portion) with the LED chip 5 in the etching frame 3 is exposed. Furthermore, the electrode terminal portion is divided.
- the thickness of the highly reflective ceramic layer 4 is preferably 20 ⁇ m or more and 150 ⁇ m or less. Thereby, sufficiently good electrical insulation and light reflectivity can be realized.
- the LED chip 5 and the etching frame 3 are electrically connected by flip chip bonding.
- the area of the light emitting portion can be reduced.
- the light emitting portion and the reflector can be provided close to each other.
- the optical coupling efficiency with the reflector can be improved.
- the LED chip 5 can be integrated, and the integration can reduce the diameter of the light emitting portion (for example, from 47 mm to 27 mm).
- the output can be increased and the diameter of the light spot can be reduced, and the light emitting device 100 that is optimal for a spotlight can be realized.
- the etching frame 3 is directly formed on the high heat dissipation ceramic layer 2. Thereby, the heat generated in the LED chip 5 and the like can be efficiently radiated to the aluminum substrate 1 through the etching frame 3 and the high heat dissipation ceramic layer 2.
- the etching frame 3 according to the present embodiment is made of copper, for example, and has a higher thermal conductivity than the high heat dissipation ceramic layer 2.
- the heat After the heat is sufficiently diffused by the etching frame 3 in contact with the electrode of the LED chip 5, the heat flows through the aluminum substrate 1 through the high heat dissipation ceramic layer 2, so that the heat passing through the high heat dissipation ceramic layer 2 is received. Thermal resistance can be lowered.
- the total sum of the bottom areas of the wiring pattern composed of the etching frame 3 is at least 5 times the sum of the bottom areas of the back electrodes of all the LED chips 5 mounted on the light emitting device 100 by flip chip bonding ( (5 times or more).
- the high reflection ceramic layer 4 is formed on the high heat dissipation ceramic layer 2 and the etching frame 3. Thereby, it is possible to improve light utilization efficiency.
- the high heat dissipation ceramic layer 2 and the high reflection ceramic layer 4 are formed by a printing method.
- the high heat dissipation ceramic layer 2 and the high reflection ceramic layer 4 are applied by a spray method. It may be formed by drying and firing.
- FIG. 7 is a cross-sectional view showing a schematic configuration of the light emitting device according to the present embodiment.
- the aluminum substrate 1, the PFA sheet 102, and the etching frame 3 correspond to a light emitting device substrate.
- the aluminum substrate 1, the etching frame 3, and the LED chip 5 are the same as those of the light emitting device 100 shown in FIG.
- the etching frame 3 is embedded in the PFA sheet 102.
- the PFA sheet (insulating layer) 102 is formed on the aluminum substrate 1. It can be said that the PFA sheet 102 is provided on one side of the aluminum substrate 1.
- the PFA sheet 102 is a sheet made of tetrafluoroethylene resin (PFA) called a tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer.
- PFA tetrafluoroethylene resin
- the PFA sheet 102 has heat resistance, chemical resistance, non-adhesiveness, self-lubricating property, and the like. Further, the PFA sheet 102 has electrical insulation properties, high thermal conductivity, and light reflectivity.
- 8 to 11 are cross-sectional views showing a method for manufacturing the light emitting device 200.
- the PFA sheet 102 is provided on the aluminum substrate 1 by compressing the aluminum substrate 1 and the PFA sheet 102 separately prepared at a high temperature (high temperature pressing). In order to fuse the PFA sheet 102 to the aluminum substrate 1 at a high temperature, a high temperature of 300 ° C. or higher is required.
- the PFA used here has low thermal conductivity and low light reflectivity as it is, and therefore improves the thermal conductivity and light reflectivity by mixing ceramic particles that are insulators having excellent thermal conductivity and light reflectivity. be able to.
- Typical ceramic materials used for such purposes are alumina, titanium oxide, zirconia, aluminum nitride, and the like.
- Typical ceramics with high light reflectivity include alumina, titanium oxide, zirconia, and the like.
- Typical ceramics with high thermal conductivity include aluminum nitride, alumina, and the like.
- alumina and titanium oxide may be mixed with the PFA as ceramic particles.
- the combination of ceramic particles is not limited to this, and any combination according to the purpose is possible.
- an etching frame 3 is prepared as shown in FIG. At this time, the etching frame 3 is not provided on the PFA sheet 102.
- the etching frame 3 is hot-pressed against the PFA sheet 102 from above the PFA sheet 102.
- a state during the high-temperature press is shown in FIG.
- This high temperature pressing is performed at a temperature of 350 ° C., for example.
- the etching frame 3 is embedded in the PFA sheet 102.
- the connection portion with the LED chip 5 in the etching frame 3 is exposed.
- each connection portion is electrically separated into a wiring pattern. Can do.
- the thickness of the PFA sheet 102 is preferably 70 ⁇ m or more and 300 ⁇ m or less. Thereby, sufficiently good electrical insulation, thermal conductivity, and light reflectivity can be realized.
- the LED chip 5 and the etching frame 3 are electrically connected by flip chip bonding.
- connection portion of the etching frame 3 with the LED chip 5 may be covered with plating.
- plating such as Ni / Pd / Au. Since the PFA sheet 102 covering the etching frame 3 has high chemical resistance, the PFA sheet 102 is not eroded by the plating solution, and plating is not deposited on portions of the etching frame 3 other than the connection portion. Reduction is possible.
- the etching frame 3 is embedded inside the PFA sheet 102. Thereby, the heat generated in the LED chip 5 and the like can be efficiently radiated to the aluminum substrate 1 through the etching frame 3 and the PFA sheet 102.
- the etching frame 3 is embedded inside the PFA sheet 102. Therefore, it is possible to improve light utilization efficiency.
- the aluminum substrate 1 according to each of the above embodiments may be made of aluminum, or may contain other materials containing aluminum as a main component. That is, the aluminum substrate 1 is sufficient if the main component of the material constituting the aluminum substrate 1 is aluminum.
- the light emitting device 200 has only one insulating layer of the PFA sheet 102, the number of steps for providing the insulating layer can be reduced.
- FIG. 12 is a cross-sectional view showing a schematic configuration of the light emitting device according to the present embodiment.
- the light emitting device 300 shown in FIG. 12 includes a copper substrate 201, a PTFE sheet 202, an etching frame 203, an inorganic resist layer 204, an LED chip 5, an adhesive 206, and a heat sink 207.
- the copper substrate 201, the PTFE sheet 202, the etching frame 203, and the inorganic resist layer 204 correspond to a light emitting device substrate.
- the copper substrate (metal substrate portion) 201 is a flexible substrate having high thermal conductivity. Instead of the copper substrate 201, an aluminum substrate having a high thermal conductivity may be used.
- the external shape of the copper substrate 201 is not particularly limited.
- the PTFE sheet (first insulating layer) 202 is formed on the copper substrate 201. It can be said that the PTFE sheet 202 is provided on one side of the copper substrate 201.
- the PTFE sheet 202 is a sheet made of a fluororesin (PTFE) obtained by bonding a fluororesin raw material called polytetrafluoroethylene.
- PTFE fluororesin
- the PTFE sheet 202 has electrical insulation and high thermal conductivity by appropriately adding ceramic particles having electrical insulation and high thermal conductivity.
- the etching frame (wiring pattern) 203 is a wiring pattern formed by etching a thin plate made of, for example, copper (see a copper plate 213 described later).
- the etching frame 203 is formed on the PTFE sheet 202.
- the inorganic resist layer (second insulating layer) 204 is formed on the PTFE sheet 202 and the etching frame 203.
- the inorganic resist layer 204 is formed from an inorganic resist paint (paint using an inorganic substance as a binder) applied to the PTFE sheet 202 and the etching frame 203.
- the inorganic resist layer 204 has electrical insulation and high light reflectivity.
- a light reflection layer in which silicone resin is used as a binder and alumina or titanium oxide ceramic particles are mixed can be formed.
- a plurality of different types of ceramic particles such as alumina and titanium oxide may be simultaneously mixed with the silicone resin to form the light reflecting layer.
- the LED chip 5 is electrically connected to the etching frame 203 and is the same as that of the light emitting device 100 or 200.
- the adhesive 206 adheres the copper substrate 201 and the heat sink 207.
- An adhesive having high heat dissipation is used as the adhesive 206.
- a heat dissipating grease may be used.
- the heat sink 207 is a heat dissipation means that absorbs heat generated in the light emitting device 300 and releases the heat to the outside of the light emitting device 300. It can be said that the heat sink 207 is provided on the other surface side of the copper substrate 201.
- the aluminum substrate 1 and the heat sink 207 may be bonded with an adhesive 206 or heat radiation grease.
- 13 to 17 are cross-sectional views showing a method for manufacturing the light emitting device 300.
- the PTFE sheet 202 is sandwiched between the copper substrate 201 and the copper plate 213, and the PTFE sheet 202, the copper substrate 201, and the copper plate 213 are fused.
- a high temperature of 300 ° C. or higher is required.
- FIG. 14 shows a state during fusion.
- the surfaces of the copper substrate 201 and the copper plate 213 that are in contact with the PTFE sheet 202 may be roughened before fusion by blasting or the like. preferable.
- the thickness of the PTFE sheet 202 is preferably 25 ⁇ m or more and 150 ⁇ m or less.
- PTFE used here has low thermal conductivity as it is, the thermal conductivity may be increased by mixing ceramic particles which are insulators having excellent thermal conductivity.
- PTFE sheet 202 with high thermal conductivity is obtained by mixing aluminum nitride or alumina with PTFE and processing it into a sheet.
- the copper plate 213 is etched to form an etching frame 203.
- the etching frame 203 is formed on the PTFE sheet 202. Since the PTFE sheet 202 has high chemical resistance, only the copper substrate 201 may be covered with the chemical resistant protective sheet 205 when the copper plate 213 is etched.
- an inorganic resist paint is applied on the PTFE sheet 202 and the etching frame 203, dried and baked to form an inorganic resist layer 204.
- the connection part (electrode terminal part) with the LED chip 5 in the etching frame 203 is still covered with the inorganic resist layer 204.
- the inorganic resist layer 204 covering the electrode terminal portion is removed by polishing to expose the electrode terminal portion.
- the thickness of the inorganic resist layer 204 is preferably 20 ⁇ m or more and 150 ⁇ m or less. Thereby, sufficiently good electrical insulation and light reflectivity can be realized.
- the LED chip 5 and the etching frame 203 are electrically connected by flip chip bonding.
- connection portion of the etching frame 203 with the LED chip 5 may be covered with plating according to the same purpose as in the second embodiment.
- the inorganic resist layer 204 covering the PTFE sheet 202 and the etching frame 203 is excellent in chemical resistance. Therefore, the first insulating layer (PTFE sheet 202) and the second insulating layer (inorganic resist layer 204) are not eroded by the plating solution, and the portions of the etching frame 203 other than the connection portions are also plated. Since it does not precipitate, man-hours can be reduced.
- the copper substrate 201 and the heat sink 207 are bonded with an adhesive 206.
- the heat sink 207 is provided on the surface of the copper substrate 201 opposite to the surface on which the PTFE sheet 202 and the like are provided.
- the etching frame 203 is directly formed on the PTFE sheet 202. Thereby, the heat generated in the LED chip 5 and the like can be efficiently radiated to the heat sink 207 via the etching frame 203, the PTFE sheet 202, the copper substrate 201, and the adhesive 206.
- the bottom area of the etching frame 203 (the area where the etching frame 203 is in contact with the PTFE sheet 202: refer to FIG. 12) is sufficient with respect to the bottom area of the electrode of the LED chip 5.
- the heat generated in the LED chip 5 is sufficiently diffused by the etching frame 203 having high thermal conductivity in contact with the electrode of the LED chip 5, and then the copper substrate 201 is interposed via the PTFE sheet 202. Can be shed.
- the thermal conductivity of the PTFE sheet 202 is lower than the thermal conductivity of the etching frame 203.
- the thermal resistance received by the heat passing through the PTFE sheet 202 can be lowered, and efficient heat dissipation can be achieved. It becomes possible.
- the etching frame 203 is made of copper, the thermal conductivity of the PTFE sheet 202 is lower than the thermal conductivity of the etching frame 203.
- the sum of the bottom areas of the wiring pattern formed of the etching frame 203 is the sum of the bottom areas of the back electrodes of all the LED chips 5 mounted on the light emitting device 300 by flip chip bonding. On the other hand, it should be at least 5 times (5 times or more). Thereby, it can be said that heat can be efficiently radiated to the copper substrate 201 via the PTFE sheet 202.
- an inorganic resist layer 204 is formed on the PTFE sheet 202 and the etching frame 203. Thereby, it is possible to improve light utilization efficiency.
- the copper substrate 201 may be made of copper, or may contain other materials mainly composed of copper. That is, the copper substrate 201 is sufficient if the main component of the material constituting the copper substrate 201 is copper.
- the inorganic resist layer 204 for example, a silicone resin mixed with white ceramic such as titanium oxide or alumina may be used.
- white ceramic such as titanium oxide or alumina
- a plurality of different types of ceramic particles such as alumina and titanium oxide may be simultaneously mixed with the silicone resin to form the light reflecting layer.
- the highly reflective ceramic layer 4 may be used instead of the inorganic resist layer 204.
- FIG. 25 is a cross-sectional view showing a schematic configuration of the light emitting device according to the present embodiment.
- the 25 includes an aluminum substrate 301, an alumite protective layer 311, an epoxy resin sheet 302, an etching frame 303, an inorganic resist layer 304, an LED chip 5, heat radiation grease 306, and a heat sink 307.
- the aluminum substrate 301, the alumite protective layer 311, the epoxy resin sheet 302, the etching frame 303, and the inorganic resist layer 304 correspond to the light emitting device substrate.
- the aluminum substrate 301 is entirely covered with an alumite protective layer 311.
- the alumite protective layer 311 subjected to the sealing treatment is excellent not only in weather resistance and environmental resistance but also in chemical resistance. For this reason, the anodized protective layer 311 not only functions as a protective film for the finished product, but also prevents the aluminum substrate 301 from being eroded by an etching solution or a plating solution showing acidity or alkalinity in the manufacturing process of the light emitting device 800. .
- the outer shape of the aluminum substrate 301 is not particularly limited.
- the epoxy resin sheet (first insulating layer) 302 may be directly formed on the aluminum substrate 301. However, the anodization treatment is performed on the aluminum substrate 301, and the entire surface of the aluminum substrate 301 is covered with the alumite protective layer 311, and then the epoxy resin sheet 302 is bonded to the alumite protective layer 311. It is preferable from the viewpoint.
- the epoxy resin sheet 302 is provided on one surface side of the aluminum substrate 301.
- Epoxy resin is inherently high in electrical insulation but low in thermal conductivity, so heat dissipation is low as it is.
- the epoxy resin sheet 302 having electrical insulation and high thermal conductivity is obtained by appropriately adding ceramic particles having high electrical insulation and thermal conductivity to the epoxy resin and then processing into a sheet shape. Is realized.
- the etching frame (wiring pattern) 303 is a wiring pattern formed by etching a thin plate made of, for example, copper (see a copper plate 313 described later).
- the etching frame 303 is formed on an epoxy resin sheet 302 having electrical insulation and high thermal conductivity.
- the inorganic resist layer (second insulating layer) 304 is formed on the epoxy resin sheet 302 and the etching frame 303.
- the inorganic resist layer 304 is formed from an inorganic resist paint (paint using an inorganic substance as a binder) applied to the epoxy resin sheet 302 and the etching frame 303.
- the inorganic resist layer 304 has electrical insulation and high light reflectivity.
- a light reflecting layer in which silicone resin is used as a binder and alumina or titanium oxide ceramic particles are mixed can be formed.
- a plurality of different types of ceramic particles such as alumina and titanium oxide may be simultaneously mixed with the silicone resin to form the light reflecting layer.
- the LED chip 5 is electrically connected to the etching frame 303, and is the same as the LED chip 5 of the light emitting device 100, 200, or 300.
- the heat dissipating grease 306 thermally connects the alumite protective layer 311 covering the aluminum substrate 301 and the heat sink 307.
- the heat sink 307 is a heat dissipation member that absorbs heat generated in the light emitting device 800 and releases the heat to the outside of the light emitting device 800. Although omitted in the drawing, the heat sink 307 usually has increased heat dissipation by widening the surface area with heat dissipating fins. It can be said that the heat sink 307 is provided on the other surface side of the aluminum substrate 301.
- 26 to 30 are cross-sectional views showing a method for manufacturing the light emitting device 800.
- an epoxy resin sheet 302 before the progress of the curing reaction is sandwiched between an aluminum substrate 301 (metal substrate portion) and a copper plate 313 covered with an alumite protective layer 311, and pressure is applied. While adding, the curing reaction of the resin proceeds at a high temperature. Then, the epoxy resin sheet 302 is cured, so that the epoxy resin sheet 302 is bonded to the aluminum substrate 301 covered with the copper plate 313 and the alumite protective layer 311.
- FIG. 27 shows a state during the bonding.
- the surface of the copper plate 313 in contact with the epoxy resin sheet 302 is roughened before bonding by blasting or the like.
- the thickness of the epoxy resin sheet 302 is preferably 25 ⁇ m or more and 150 ⁇ m or less.
- the surface of the aluminum substrate 301 in contact with the epoxy resin sheet 302 is roughened before bonding by blasting or chemical treatment with acid or alkali. It is also preferable to do.
- This method is effective as a method for increasing the adhesion strength regardless of whether the surface of the aluminum substrate 301 is covered with the alumite protective layer 311 or not.
- the thermal conductivity can be improved by mixing ceramic particles which are insulators having excellent thermal conductivity.
- ceramic particles such as aluminum nitride and alumina
- an epoxy resin sheet 302 having a high thermal conductivity before proceeding with the curing reaction can be obtained. While this is pressed against the anodized protective layer 311 covering the aluminum substrate 301, the cured epoxy resin sheet 302 having a high thermal conductivity is accelerated by promoting the resin curing reaction at a high temperature of, for example, about 180 ° C. 311 is formed.
- the epoxy resin sheet 302, the alumite protective layer 311 and the copper plate 313 are bonded at the same time, but the bonding method is not limited to this.
- the composite sheet may be bonded to the alumite protective layer 311 using a high-temperature press. It is only necessary that the layer structure shown in FIG. 27 can be finally formed.
- an etching frame 303 is formed by etching the copper plate (conductor) 313 as shown in FIG. Thereby, the etching frame 303 is formed on the epoxy resin sheet 302 having a high thermal conductivity.
- the epoxy resin sheet 302 has high chemical resistance, and the epoxy resin sheet 302 is not eroded by the etching solution when the copper plate 313 is etched.
- the aluminum substrate 301 covered with the anodized protective layer 311 has high chemical resistance, it is a new chemical resistant protective sheet such as the bare aluminum substrate 1 (without the anodized protective layer 311) or the copper substrate 201. There is no need to cover.
- Aluminum can be inexpensively and easily formed with an alumite protective film on its surface by anodizing and sealing treatment. Since the protective film made of alumite is excellent in chemical resistance as described above, it functions as a protective film against the etching solution and the plating solution in the manufacturing process of the light emitting device. On the other hand, since the protective film made of anodized is excellent in environmental resistance and weather resistance, it also functions as a protective film in a finished light emitting device. For this reason, it is preferable to use what coated the surface of aluminum with the alumite as a material of a metal substrate part.
- an inorganic resist paint is applied on the epoxy resin sheet 302 and the etching frame 303, dried and baked to form an inorganic resist layer 304.
- the connection part (electrode terminal part) with the LED chip 5 in the etching frame 303 is also covered with the inorganic resist layer 304.
- the inorganic resist layer 304 covering the electrode terminal portion is removed by polishing to expose the electrode terminal portion.
- the thickness of the inorganic resist layer 304 is preferably 20 ⁇ m or more and 150 ⁇ m or less. Thereby, sufficiently good electrical insulation and light reflectivity can be realized.
- the LED chip 5 and the etching frame 303 are electrically connected by flip chip bonding.
- connection portion of the etching frame 303 with the LED chip 5 may be covered with plating according to the same purpose as in the second and third embodiments.
- the inorganic resist layer 304 covering the epoxy resin sheet 302 and the etching frame 303 is excellent in chemical resistance, and the aluminum substrate 301 is also covered with the alumite protective layer 311. Therefore, neither the metal substrate portion nor the first and second insulating layers are eroded by the plating solution, and the plating is deposited on the etching frame 303 other than the connection portion with the LED chip 5. (Therefore, plating can be efficiently deposited only on the connecting portion), so that the number of man-hours can be reduced.
- the alumite protective layer 311 formed on the surface of the aluminum substrate 301 and the heat sink 307 are bonded with heat radiation grease 306.
- the heat sink 307 is provided on the surface of the aluminum substrate 301 opposite to the surface on which the epoxy resin sheet 302 and the like are provided.
- an etching frame 303 is directly formed on the epoxy resin sheet 302.
- the heat generated in the LED chip 5 and the like is efficiently transferred to the heat sink 307 via the etching frame 303, the epoxy resin sheet 302, the anodized protective layer 311, the aluminum substrate 301, the anodized protective layer 311, and the heat radiation grease 306. Heat can be released.
- an inorganic resist layer 304 is formed on the epoxy resin sheet 302 and the etching frame 303. Thereby, it is possible to improve light utilization efficiency.
- the aluminum substrate 301 may be made of aluminum, or may contain other materials mainly composed of aluminum. In short, it is sufficient that sufficient aluminum for forming the alumite protective layer 311 on the surface thereof is contained as a component of the material constituting the aluminum substrate 301.
- the inorganic resist layer 304 for example, a silicone resin mixed with white ceramic such as titanium oxide or alumina may be used.
- white ceramic such as titanium oxide or alumina
- a plurality of different types of ceramic particles such as alumina and titanium oxide may be simultaneously mixed with the silicone resin to form the light reflecting layer.
- the highly reflective ceramic layer 4 may be used instead of the inorganic resist layer 304.
- an epoxy resin is used for the epoxy resin sheet 302 corresponding to the first insulating layer.
- a glass-based binder having a high firing temperature
- a resin binder it is possible to prevent deterioration with time or discoloration due to heat generation of the light source or strong light irradiation by blue light, etc., and it is also resistant to acids and alkalis used in the plating solution, etc.
- a thermosetting resin having chemical properties is used.
- the resin binder is not limited to a thermosetting resin, and may be a thermoplastic resin or the like. Specific resin materials include silicone resin, epoxy resin, polyimide resin, fluororesin and the like.
- the binder made of a thermosetting resin used for the inorganic resist layer 304 or the highly reflective ceramic layer 4 (see FIG. 1) may have a long-term reliability that is lower than that of a glass-based binder. Curing is easy because it cures at a low temperature. Thereby, damage to the aluminum substrate 301, the alumite protective layer 311 and the epoxy resin sheet 302 (first insulating layer) due to heat can be prevented, and the manufacturing cost can be reduced.
- the second insulating layer is formed at a relatively low temperature of 200 ° C. or lower.
- the formation of the anodized protective layer 311 may be performed before or after the formation of the second insulating layer.
- alumina, zirconia, titanium oxide, nitriding are used as typical materials used as ceramics or ceramic particles used for increasing the thermal conductivity and light reflectance of the epoxy resin sheet 302 and the highly reflective ceramic layer 4.
- alumina, zirconia, titanium oxide, nitriding are used as typical materials used as ceramics or ceramic particles used for increasing the thermal conductivity and light reflectance of the epoxy resin sheet 302 and the highly reflective ceramic layer 4.
- Aluminum etc. are mentioned.
- the ceramic referred to here is not limited to metal oxides, but includes ceramics in a broad sense including aluminum nitride and the like, that is, inorganic solid materials in general.
- ceramic particles used for the inorganic resist layer 304 or the highly reflective ceramic layer 4 are stable substances having excellent heat resistance and light resistance, such as alumina, zirconia, and titanium oxide. As long as the substance has excellent light diffusion and reflection characteristics, any substance may be used.
- the highly light-reflective ceramic material include magnesium oxide, zinc oxide, barium sulfate, zinc sulfate, magnesium carbonate, calcium carbonate, wollastonite, and the like, which are typical inorganic white materials.
- the particles made of the above ceramic materials may be appropriately selected and used in combination.
- An advantage of using the epoxy resin sheet 302 is that the manufacturing process is simplified. This is because the epoxy resin sheet 302 can be attached after the entire surface of the aluminum substrate 301 is covered with the alumite protective layer 311. This is because the hardening acceleration temperature of the epoxy resin is as low as 180 ° C., and thus the anodized protective layer 311 is hardly cracked.
- the alumite protective layer 311 When the surface of the aluminum substrate 301 with the alumite protective layer 311 formed thereon is heated to a high temperature of 250 ° C. or higher, the alumite protective layer 311 is cracked due to the difference in expansion coefficient between the aluminum substrate 301 and the alumite protective layer 311. May occur. Once a crack is generated, the aluminum substrate 301 is eroded by an etching solution and a plating solution that have penetrated from the crack into the aluminum substrate 301 in the subsequent manufacturing process.
- each first insulating layer shown in the first to third embodiments is as high as 250 ° C. or higher, and the aluminum substrate 1 (in the third embodiment, the aluminum substrate 1 instead of the copper substrate 201) is used.
- the aluminum substrate 1 may be eroded by the etching solution or the plating solution.
- the drying and firing temperature is usually as high as 250 ° C. to 500 ° C.
- the temperature at which the PFA sheet 102 or PTFE sheet 202 is fused to the aluminum substrate 1 is 300 ° C. or higher. Therefore, there is a concern that the alumite protective layer is cracked and the protective function is lowered.
- a glass-based binder is used for covering with an alumite protective layer.
- an insulating layer is appropriately formed using a PFA sheet or a PTFE sheet, the insulating layer and the aluminum substrate 1 are subjected to steps such as anodizing treatment, sealing treatment, and water washing. As a result, special attention must be paid to the work.
- the manufacturing is simple.
- FIG. 18 is a plan view showing the application example.
- FIG. 19 is a cross-sectional view showing the application example.
- the light emitting device 400 shown in FIGS. 18 and 19 includes a metal substrate (metal substrate portion) 401, a first insulating layer 402, a wiring pattern 403, a second insulating layer 404, and an LED chip 405.
- the metal substrate 401 is the aluminum substrate 1 or the copper substrate 201.
- the first insulating layer 402 is an insulating layer having thermal conductivity formed on the metal substrate 401, and is the high heat dissipation ceramic layer 2 or the PTFE sheet 202.
- the wiring pattern 403 is formed on the first insulating layer 402 and is the etching frame 3 or the etching frame 203. Note that the wiring pattern 403 covers almost the entire surface of the metal substrate 401 on which the first insulating layer 402 is provided (one surface side). In fact, according to FIG. 18, except for the electrically separated portion of the wiring pattern 403, the wiring pattern 403 is almost entirely on the surface side (one surface side) on which the first insulating layer 402 is provided. Covering. Thereby, heat dissipation becomes favorable.
- the second insulating layer 404 is a light-reflective insulating layer formed on the first insulating layer 402 and the wiring pattern 403, and is the highly reflective ceramic layer 4 or the inorganic resist layer 204.
- the LED chip 405 is electrically connected to the wiring pattern 403 and is the LED chip 5.
- FIG. 18 shows nine LED chips 405 arranged in three rows and three columns. Nine LED chips 405 are connected in parallel in three rows by a wiring pattern 403, and each of the three rows has a connection configuration having a series circuit of three LED chips 405 (ie, three series and three parallel). It has become. Of course, the number of LED chips 405 is not limited to nine, and may not have a 3 series / 3 parallel connection configuration.
- the light emitting device 400 includes a light reflecting resin frame 406, a phosphor-containing sealing resin 407, an anode electrode 408, a cathode electrode 409, an anode mark 410, a cathode mark 411, and a screw portion 412.
- the light reflecting resin frame 406 is an annular (arc-shaped) frame made of an alumina filler-containing silicone resin provided on the wiring pattern 403 and the second insulating layer 404.
- the material of the light reflecting resin frame 406 is not limited to this, and may be any insulating resin having light reflectivity.
- alumina is used as the filler, but in addition to this, a white material typified by titanium oxide, zirconia, silica, or the like may be used as a filler, or an appropriate combination of these inorganic materials may be used.
- the shape of the light reflecting resin frame 406 is not limited to an annular shape (arc shape), and may be an arbitrary shape.
- the phosphor-containing sealing resin 407 is a sealing resin layer made of a translucent resin.
- the phosphor-containing sealing resin 407 is filled in a region surrounded by the light reflecting resin frame 406 and seals the wiring pattern 403, the second insulating layer 404, and the LED chip 405.
- the phosphor-containing sealing resin 407 contains a phosphor.
- As the phosphor a phosphor that is excited by the primary light emitted from the LED chip 405 and emits light having a longer wavelength than the primary light is used.
- the configuration of the phosphor is not particularly limited, and can be appropriately selected according to desired white chromaticity and the like.
- a combination of high color rendering a combination of (Sr, Ca) AlSiN 3 : Eu red phosphor and Ca 3 (Sc, Mg) 2 Si 3 O 12 : Ce green phosphor can be used.
- the combination of another fluorescent substance may be used and the structure containing only a YAG yellow fluorescent substance as pseudo white may be used.
- a sealing resin layer made of a translucent resin may be formed.
- the anode electrode 408 and the cathode electrode 409 are electrodes for supplying a current for driving the LED chip 405 to the LED chip 405, and are provided in the form of lands.
- the anode electrode 408 and the cathode electrode 409 are electrodes that can be connected to an external power source (not shown) of the light emitting device 400.
- the anode electrode 408 and the cathode electrode 409 are connected to the LED chip 405 through the wiring pattern 403.
- the anode mark 410 and the cathode mark 411 are alignment marks serving as references for positioning with respect to the anode electrode 408 and the cathode electrode 409, respectively. Further, the anode mark 410 and the cathode mark 411 have a function of indicating the polarities of the anode electrode 408 and the cathode electrode 409, respectively.
- the screw part 412 is a protrusion provided on the metal substrate 401. If the side on which the LED chip 405 is provided is the side on which the wiring pattern 403 is formed with the metal substrate 401 as a reference, the screw part 412 has the wiring pattern 403 formed with the metal substrate 401 as a reference. It is formed on the opposite side of the surface. That is, when the metal substrate 401 is used as a reference, the screw portion 412 is provided on the side opposite to the first insulating layer 402 and the like.
- the screw portion 412 is provided for attaching the light emitting device 400 to other components. For example, a screw portion 412 that is a male screw is configured, and a female screw that is screwed into the screw portion 412 is provided in the other parts. As a result, it is possible to attach components to the light emitting device 400 using the screw portion 412 and the female screw. Examples of the other components include a heat sink 207 (see FIG. 12).
- the thickness of the portion of the wiring pattern 403 immediately below the anode electrode 408 and the cathode electrode 409 is larger than the thickness of the portion of the wiring pattern 403 other than the portion immediately below the anode electrode 408 and the cathode electrode 409.
- the thickness of the wiring pattern 403 is preferably 70 ⁇ m or more and 150 ⁇ m or less immediately below the anode electrode 408 and the cathode electrode 409, and is preferably 35 ⁇ m or more and 75 ⁇ m or less except for the portion immediately below the anode pattern 403.
- the thickness of the wiring pattern 403 exceeds 150 ⁇ m, a dramatic improvement in the heat dissipation function cannot be expected even if the wiring pattern 403 is increased further. .
- the bottom area of the wiring pattern 403, that is, the total area of the portion where the wiring pattern 403 shown in FIG. 19 is in contact with the first insulating layer 402 is 5 to 10 times the total area of the back surface electrode 415 of the LED chip 405.
- the total area of the back electrode 415 of the LED chip 405 means the total area of the back electrode 415 of all the LED chips 405 mounted on the light emitting device 400.
- the bottom area of the wiring pattern 403 per LED chip 405 is preferably 5 to 10 times the area of the back electrode 415 for one LED chip 405.
- the bottom area of the wiring pattern 403 is preferably 5 to 10 times the total area of the back electrodes 415 of all LED chips 405 mounted on the light emitting device 400, but is not limited thereto.
- the optical coupling efficiency with the reflector can be improved by reducing the area of the light emitting portion.
- Increasing the bottom area of the wiring pattern 403 is effective for improving heat dissipation, while increasing the area of the light emitting portion.
- the light coupling efficiency with the reflector is lowered, and the light emitting device is unsuitable for a spotlight or the like.
- the bottom area of the wiring pattern 403 is preferably 5 to 10 times the total area of the back electrodes 415 of all the LED chips 405 mounted on the light emitting device 400. Attached. As a result, the diameter of the light emitting part is reduced due to the possibility of integration when a flip chip type LED chip is used as the LED chip 405 (for example, the diameter is changed from 47 mm to 27 mm), and the bottom area of the wiring pattern 403 is increased. It is possible to achieve both efficient heat dissipation.
- the light emitting device 400 has been described as an example with reference to FIG. 19, but the same applies to a light emitting device 500 (see FIG. 20) described later.
- the light emitting device 400 is an application example of the light emitting device 100 or 300.
- FIG. 20 is a cross-sectional view showing another application example.
- a plan view showing another application example is the same as FIG.
- a light emitting device 500 shown in FIGS. 18 and 20 includes a metal substrate 401, an insulating layer 502, a wiring pattern 403, and an LED chip 405. That is, in contrast to the light-emitting device 400, the light-emitting device 500 includes an insulating layer 502 instead of the first insulating layer 402 and the second insulating layer 404.
- the metal substrate 401, the wiring pattern 403, and the LED chip 405 are the same as those of the light emitting device 400, respectively.
- the wiring pattern 403 is embedded in the insulating layer 502 in the light emitting device 500.
- the insulating layer 502 is an insulating layer having thermal conductivity and light reflectivity formed on the metal substrate 401 and is the PFA sheet 102.
- the light emitting device 500 includes a light reflecting resin frame 406, a phosphor-containing sealing resin 407, an anode electrode 408, a cathode electrode 409, an anode mark 410, a cathode mark 411, and a screw portion 412. These configurations are the same between the light emitting device 400 and the light emitting device 500.
- the light emitting device 500 is an application example of the light emitting device 200.
- FIG. 21 is a plan view showing the main part of the modified example.
- FIG. 21 shows a wiring pattern 603 which is a modified example of the wiring pattern 403.
- the wiring pattern 603 has an anode side located immediately below the anode electrode 408 and a cathode side located directly below the cathode electrode 409.
- the nine LED chips 405 are arranged in 3 rows and 3 columns, which are used when the wiring pattern 403 is used (that is, the light emitting elements 400 and 500) and when the wiring pattern 603 is used (that is, the above-described modification). It is the same as Example).
- the nine LED chips 405 have a connection configuration having one parallel circuit of the nine LED chips 405 by the wiring pattern 603.
- the connection configuration of the LED chip 405 can be changed as appropriate according to desired characteristics of the light-emitting device.
- FIG. 22 shows an electronic circuit board 701 in which a connection portion with an LED chip (not shown) (see the notation of “flip chip mounting” in FIG. 22), an anode electrode 708, and a cathode electrode 709 are formed as wirings.
- the electronic circuit board 701 has an insulating layer formed on a metal substrate.
- FIG. 22 shows a region 707 to which the phosphor-containing sealing resin is to be applied.
- FIG. 23 shows a state where almost all of one surface side of the electronic circuit board 701 is covered with the wiring pattern 703.
- the wiring pattern 703 when the wiring pattern 703 is large, the wiring pattern 703 has low light reflectance. For this reason, it is effective to cover a portion other than the wiring pattern 703 necessary for mounting the LED chip with a material having excellent light reflectivity.
- FIG. 24 shows a state where the wiring pattern 703 is covered with the insulating layer 704 except for the connection portion with the LED chip, the anode electrode 708 and the cathode electrode 709.
- the bottom area of the wiring pattern 403 is preferably 5 to 10 times the total area of the back electrodes 415 of all the LED chips 405 mounted on the light emitting device 400”.
- FIG. 31A is a perspective view of the lighting device 801
- FIG. 31B is a cross-sectional view of the lighting device 801.
- the lighting device 801 is manufactured using a light emitting device 804 that is high quality and inexpensive. For this reason, it is possible to provide an inexpensive and high-quality lighting device 801 to the user.
- 802 is a heat sink and 823 is a reflector.
- FIG. 32 is a front sectional view showing the shape of the reflector 823.
- the inner peripheral surface of the reflector 823 is formed by a parabolic surface obtained by rotating a parabola.
- the general formula of the paraboloid is expressed by the following formula (1) when the focal position is (0, a).
- the z axis is a symmetry axis of the paraboloid coincident with the optical axis of the light emitted from the light emitting device 804, and the r axis is an axis passing through the focal position of the paraboloid and perpendicular to the optical axis. .
- FIG. 32 shows the coordinates of the inner peripheral surface of the reflector 823 when the diameter of the light emitting portion (corresponding to the bottom of the inner wall of the reflector 823) is 47 mm and 27 mm, based on the above equation (1). ing.
- the inner peripheral surface when the diameter of the light emitting portion is 47 mm is indicated by a solid line 13a, and the inner peripheral surface when the diameter of the light emitting portion is 27 mm is indicated by a broken line 13b.
- the light emitting portion is located near the focal position of the paraboloid constituting the reflector 823.
- the number “a” in the formula (1) can be reduced.
- the diameter ⁇ 0 of the light emitting portion is reduced from 47 mm to 27 mm, the inner peripheral surface of the reflector 823 is changed from the solid line 13a to the broken line 13b.
- the depth of the reflector 823 is the same, the smaller the number “a”, the higher the light condensing property. Even when the shape of the same reflector 823 is used, if the light-emitting portion is small, performance close to that of a point light source is exhibited.
- the substrate for a light emitting device includes a metal substrate portion (aluminum substrate 1 and the like) having at least a metal substrate, and a thermally conductive first substrate formed on the metal substrate portion.
- a metal substrate portion (aluminum substrate 1 and the like) having at least a metal substrate, and a thermally conductive first substrate formed on the metal substrate portion.
- 1 insulating layer (high heat dissipation ceramic layer 2 and others), a wiring pattern (etching frame 3 and others) formed on the first insulating layer, and formed on the first insulating layer and the wiring pattern.
- a second insulating layer having high light reflectivity high reflection ceramic layer 4 and others.
- the wiring pattern is directly formed on the first insulating layer. Therefore, it is possible to efficiently dissipate heat generated in the light emitting element or the like to the metal substrate portion via the wiring pattern and the first insulating layer.
- the second insulating layer is formed on the first insulating layer and the wiring pattern. Therefore, it is possible to improve light utilization efficiency.
- the substrate for a light-emitting device according to aspect 2 of the present invention is the light-emitting device substrate according to aspect 1, wherein the first insulating layer has higher thermal conductivity than the second insulating layer, and the second insulating layer. Has higher light reflectivity than the first insulating layer.
- a substrate for a light-emitting device includes a metal substrate portion having at least a metal substrate, and an insulating layer having thermal conductivity and light reflectivity formed on the metal substrate portion ( PFA sheet 102) and a wiring pattern embedded in the insulating layer.
- the wiring pattern is embedded in the insulating layer. Therefore, it is possible to efficiently dissipate heat generated in the light emitting element or the like to the metal substrate portion via the wiring pattern and the insulating layer.
- the wiring pattern is embedded in the insulating layer. Therefore, it is possible to improve light utilization efficiency.
- the insulating layer is made of any one of an epoxy resin, a silicone resin, a fluorine resin, and a polyimide resin.
- the insulating layer is made of a sheet-like resin.
- the insulating layer is made of a PFA sheet.
- the light emitting device substrate according to Aspect 7 of the present invention is any one of Aspects 3 to 6, wherein the insulating layer contains ceramic particles.
- the light emitting device substrate according to aspect 8 of the present invention is the above aspect 1, wherein the first insulating layer is made of a ceramic paint applied to the metal substrate portion.
- the substrate for a light-emitting device according to aspect 9 of the present invention is the light-emitting device substrate according to aspect 1, wherein the first insulating layer is made of any one of an epoxy resin, a silicone resin, a fluorine resin, and a polyimide resin. .
- the light emitting device substrate according to aspect 10 of the present invention is the above aspect 9 wherein the first insulating layer is made of a sheet-like resin.
- the first insulating layer is formed of a PTFE sheet.
- the light emitting device substrate according to Aspect 12 of the present invention is any one of Aspects 1, 9, 10, and 11, wherein the first insulating layer contains ceramic particles.
- the light emitting device substrate according to aspect 13 of the present invention is the light emitting device substrate according to aspect 1, wherein the second insulating layer contains ceramic particles in one of an epoxy resin, a silicone resin, a fluorine resin, and a polyimide resin. Being done.
- the light emitting device substrate according to aspect 14 of the present invention is the light emitting device substrate according to aspect 1, wherein the second insulating layer includes a glass binder and ceramic particles.
- the light emitting device substrate according to Aspect 15 of the present invention is the light emitting device substrate according to any one of Aspects 1 to 14, wherein the metal substrate portion is coated with an alumite protective layer by anodizing the aluminum surface.
- a light emitting device is formed on the light emitting device substrate according to any one of the above aspects 1, 2, 8 to 14 and the second insulating layer of the light emitting device substrate, and the wiring A light emitting element (LED chip 5 or the like) electrically connected to the pattern is provided.
- a light emitting device is formed on the light emitting device substrate according to any one of the above aspects 3 to 7 and the insulating layer of the light emitting device substrate, and is electrically connected to the wiring pattern.
- a light emitting element is formed on the light emitting device substrate according to any one of the above aspects 3 to 7 and the insulating layer of the light emitting device substrate, and is electrically connected to the wiring pattern.
- the light emitting element is electrically connected to the wiring pattern by flip chip bonding.
- the light-emitting device according to aspect 19 of the present invention is the light-emitting device according to aspect 18, wherein the sum of the bottom areas of the wiring patterns that supply current to the light-emitting elements is the bottom area of the back electrode of the light-emitting elements connected to the wiring patterns. Is at least five times the sum of.
- a method for manufacturing a substrate for a light emitting device includes a step of forming an alumite protective layer on an aluminum substrate by anodizing to manufacture a metal substrate portion, and ceramic particles.
- a composite sheet obtained by laminating an epoxy resin whose thermal conductivity is improved into a sheet shape and a metal sheet made of copper is bonded to the metal substrate portion, and the conductive layer and the second A step of forming one insulating layer, a step of forming a wiring pattern by etching from the conductive layer, and a heat lower than that of the first insulating layer on the first insulating layer and the wiring pattern.
- a second insulating layer having conductivity and light reflectivity higher than that of the first insulating layer is formed by coating, and the wiring pattern is electrically connected to the electrode of the light emitting element.
- Exposing a terminal portion includes the steps of coating a metal plating the electrode terminal portions.
- a light-emitting device includes a metal substrate (aluminum substrate 1 and the like), a first insulating layer (a high heat dissipation ceramic layer 2 and the like) formed on the metal substrate and having thermal conductivity.
- a wiring pattern (etching frame 3 and the like) formed on the first insulating layer, and a second insulating layer having light reflectivity formed on the first insulating layer and the wiring pattern. (Highly reflective ceramic layer 4 etc.) and a light emitting element (LED chip 5 etc.) formed on the second insulating layer and electrically connected to the wiring pattern.
- the wiring pattern is directly formed on the first insulating layer. Therefore, the heat generated in the light emitting element or the like can be efficiently radiated to the metal substrate through the wiring pattern and the first insulating layer.
- the second insulating layer is formed on the first insulating layer and the wiring pattern. Therefore, it is possible to improve light utilization efficiency.
- a light-emitting device includes a metal substrate, an insulating layer (PFA sheet 102) formed on the metal substrate and having heat conductivity and light reflectivity, and an inside of the insulating layer.
- An embedded wiring pattern and a light emitting element formed on the insulating layer and electrically connected to the wiring pattern are provided.
- the wiring pattern is embedded in the insulating layer. Therefore, it is possible to efficiently radiate the heat generated in the light emitting element or the like to the metal substrate through the wiring pattern and the insulating layer.
- the wiring pattern is embedded in the insulating layer. Therefore, it is possible to improve light utilization efficiency.
- the insulating layer may be formed of a PFA sheet.
- the light emitting element may be electrically connected to the wiring pattern by flip chip bonding.
- the first insulating layer may be composed of a ceramic paint applied to the metal substrate.
- the first insulating layer may be formed of a PTFE sheet.
- the second insulating layer may be composed of a ceramic paint applied to the first insulating layer and the wiring pattern.
- the material constituting the metal substrate may include aluminum.
- copper may be included in the material constituting the metal substrate.
- the thickness of the first insulating layer may be not less than 25 ⁇ m and not more than 150 ⁇ m.
- the thickness of the second insulating layer may be not less than 20 ⁇ m and not more than 150 ⁇ m.
- the thickness of the PFA sheet may be not less than 70 ⁇ m and not more than 300 ⁇ m.
- the thickness of the PTFE sheet may be not less than 25 ⁇ m and not more than 150 ⁇ m.
- the light emitting element is provided on a side of the surface on which the wiring pattern is formed with respect to the metal substrate, and the wiring pattern is based on the metal substrate.
- a screw portion for attaching the light-emitting device to another component may be formed on the opposite side of the formed surface.
- the screw portion is provided for attaching the light emitting device to other components.
- a screw portion that is a male screw is configured, and a female screw that is screwed into the screw portion is provided in another component.
- components can be attached to the light emitting device by the screw portion and the female screw.
- the thickness of the wiring pattern is 70 ⁇ m or more and 150 ⁇ m or less immediately below the electrode that supplies a current for driving the light emitting element to the light emitting element. It may be 35 ⁇ m or more and 75 ⁇ m or less in a portion other than directly below.
- the thicker the wiring pattern the higher the heat dissipation function of the light emitting device.
- the wiring pattern thickness exceeds 150 ⁇ m, the heat dissipation function cannot be dramatically improved even if the wiring pattern is made thicker. In consideration of this, it is preferable to determine the thickness of the wiring pattern.
- an area of an electrode that supplies a current for driving the light emitting element to the light emitting element may be at least five times an area of a back electrode of the light emitting element.
- the wiring pattern may cover all of one surface side of the metal substrate.
- the expression “covering all sides of the surface” includes a case where substantially all of the surface side is covered (that is, a very small part of the surface side is not covered).
- a light-emitting device includes a metal substrate, a first insulating layer having thermal conductivity formed over the metal substrate, and the first insulating layer.
- a wiring pattern formed on the insulating layer, a second insulating layer having light reflectivity formed on the first insulating layer and the wiring pattern, and on the second insulating layer A light-emitting element formed and electrically connected to the wiring pattern may be provided.
- a light-emitting device includes a metal substrate, an insulating layer having thermal conductivity and light reflectivity formed on the metal substrate, A wiring pattern embedded in the insulating layer and a light emitting element formed on the insulating layer and electrically connected to the wiring pattern may be provided.
- the present invention can be used for a light emitting device in which an insulating layer is formed on a metal substrate.
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Abstract
Description
本発明の一実施の形態について説明する。
本発明の別の実施の形態について説明する。
本発明のさらに別の実施の形態について説明する。
本発明のさらに別の実施の形態について説明する。
本実施の形態(実施の形態4)の説明では、第1の絶縁層に相当するエポキシ系樹脂シート302にエポキシ系樹脂を用いている。このため、無機レジスト層304に高反射セラミックを使用する場合、焼成温度が高いガラス系バインダを使用することは回避し、樹脂系バインダを使用することが好ましい。樹脂系バインダとしては、光源の発熱や青色光等による強い光照射に起因する経時劣化または変色を防止すると共に、メッキ処理液等に用いられる酸およびアルカリにも耐性がある、高耐熱性および耐薬品性を有する熱硬化性樹脂が用いられる。但し、このような特性を備えるのであれば、樹脂系バインダは、熱硬化性樹脂に限定されることは無く、熱可塑性樹脂等であってもよい。具体的な樹脂材料としては、シリコーン樹脂、エポキシ樹脂、ポリイミド樹脂、フッ素樹脂等が挙げられる。
上記の各実施の形態に係る発光装置の各種応用例について説明する。
図18は、上記応用例を示す平面図である。
図20は、別の応用例を示す断面図である。なお、別の応用例を示す平面図は、図18と同じになる。
図18に示す発光装置400および500の変形例について説明する。
図22~図24は、本発明のコンセプトを説明する図である。
以上に述べた各発光装置は、例えば、図31に示す照明装置801の発光装置804に適用することができる。図31の(a)は照明装置801の斜視図、図31の(b)は照明装置801の断面図である。照明装置801は、高品質かつ安価な発光装置804を用いて製造されている。このため、ユーザに安価で高品質の照明装置801を提供することができる。図31中、802はヒートシンク、823はリフレクターである。
図32には、発光部分(リフレクター823の内壁底面に相当)の直径が47mmのときと27mmのときとのそれぞれの、リフレクター823の内周面の座標を、上記数式(1)に基づいて示している。発光部分の直径が47mmのときの該内周面は実線13aで示されており、発光部分の直径が27mmのときの該内周面は破線13bで示されている。該発光部分は、リフレクター823を構成する放物面の焦点位置近傍に位置する。
本発明の態様1に係る発光装置用基板は、金属の基板を少なくとも有している金属基板部(アルミニウム基板1他)と、上記金属基板部の上に形成された、熱伝導性を有する第1の絶縁層(高放熱セラミック層2他)と、上記第1の絶縁層の上に形成された配線パターン(エッチングフレーム3他)と、上記第1の絶縁層および上記配線パターンの上に形成された、光反射性を有する第2の絶縁層(高反射セラミック層4他)とを備えている。
上記の課題を解決するために、本発明の一態様に係る発光装置は、金属基板と、上記金属基板の上に形成された、熱伝導性を有する第1の絶縁層と、上記第1の絶縁層の上に形成された配線パターンと、上記第1の絶縁層および上記配線パターンの上に形成された、光反射性を有する第2の絶縁層と、上記第2の絶縁層の上に形成され、上記配線パターンと電気的に接続された発光素子とを備えていることを特徴としていてもよい。
2 高放熱セラミック層(第1の絶縁層)
3 エッチングフレーム(配線パターン)
4 高反射セラミック層(第2の絶縁層)
5 LEDチップ(発光素子)
100、200、300、400、および500 発光装置
102 PFAシート(絶縁層)
201 銅基板(金属基板部)
202 PTFEシート(第1の絶縁層)
203 エッチングフレーム(配線パターン)
204 無機レジスト層(第2の絶縁層)
301 アルミニウム基板(金属基板部)
302 エポキシ系樹脂シート(第1の絶縁層)
303 エッチングフレーム(配線パターン)
304 無機レジスト層(第2の絶縁層)
311 アルマイト保護層(金属基板部)
313 銅板(導電体)
401 金属基板(金属基板部)
402 第1の絶縁層
403 配線パターン
404 第2の絶縁層
405 LEDチップ
408 アノード電極(電極)
409 カソード電極(電極)
412 ネジ部
415 裏面電極
502 絶縁層
603 配線パターン
Claims (20)
- 金属の基板を少なくとも有している金属基板部と、
上記金属基板部の上に形成された、熱伝導性を有する第1の絶縁層と、
上記第1の絶縁層の上に形成された配線パターンと、
上記第1の絶縁層および上記配線パターンの上に形成された、光反射性を有する第2の絶縁層とを備えていることを特徴とする発光装置用基板。 - 上記第1の絶縁層は、上記第2の絶縁層よりも高い熱伝導性を有しており、
上記第2の絶縁層は、上記第1の絶縁層よりも高い光反射性を有していることを特徴とする請求項1に記載の発光装置用基板。 - 金属の基板を少なくとも有している金属基板部と、
上記金属基板部の上に形成された、熱伝導性および光反射性を有する絶縁層と、
上記絶縁層の内部に埋め込まれた配線パターンとを備えていることを特徴とする発光装置用基板。 - 上記絶縁層は、エポキシ系樹脂、シリコーン系樹脂、フッ素系樹脂、ポリイミド樹脂のいずれかの樹脂によって構成されていることを特徴とする請求項3に記載の発光装置用基板。
- 上記絶縁層は、シート状樹脂によって構成されていることを特徴とする請求項4に記載の発光装置用基板。
- 上記絶縁層は、PFAシートによって構成されていることを特徴とする請求項5に記載の発光装置用基板。
- 上記絶縁層は、セラミック粒子を含有することを特徴とする請求項3から6のいずれか1項に記載の発光装置用基板。
- 上記第1の絶縁層は、上記金属基板部に対して塗布されたセラミック塗料から構成されていることを特徴とする請求項1に記載の発光装置用基板。
- 上記第1の絶縁層は、エポキシ系樹脂、シリコーン系樹脂、フッ素系樹脂、ポリイミド樹脂のいずれかの樹脂によって構成されていることを特徴とする請求項1に記載の発光装置用基板。
- 上記第1の絶縁層は、シート状樹脂によって構成されていることを特徴とする請求項9に記載の発光装置用基板。
- 上記第1の絶縁層は、PTFEシートによって構成されていることを特徴とする請求項10に記載の発光装置用基板。
- 上記第1の絶縁層は、セラミック粒子を含有することを特徴とする請求項1、9、10、11のいずれか1項に記載の発光装置用基板。
- 上記第2の絶縁層は、エポキシ系樹脂、シリコーン系樹脂、フッ素系樹脂、ポリイミド樹脂のいずれかの樹脂にセラミック粒子が含有されてなることを特徴とする請求項1に記載の発光装置用基板。
- 上記第2の絶縁層は、ガラス系バインダにセラミック粒子が含有されてなることを特徴とする請求項1に記載の発光装置用基板。
- 上記金属基板部は、アルミニウムの表面が陽極酸化処理により、アルマイト保護層によって被覆されてなることを特徴とする請求項1から14のいずれか1項に記載の発光装置用基板。
- 請求項1、2、8から14のいずれか1項に記載の発光装置用基板と、
上記発光装置用基板の上記第2の絶縁層の上に形成され、上記配線パターンと電気的に接続された発光素子とを備えていることを特徴とする発光装置。 - 請求項3から7のいずれか1項に記載の発光装置用基板と、
上記発光装置用基板の上記絶縁層の上に形成され、上記配線パターンと電気的に接続された発光素子とを備えていることを特徴とする発光装置。 - 上記発光素子は、フリップチップボンディングにより、上記配線パターンと電気的に接続されていることを特徴とする請求項16または17に記載の発光装置。
- 上記発光素子に電流を供給する上記配線パターンの底面積の総和が、この配線パターンに接続されたこの発光素子の裏面電極の底面積の総和に対し、少なくとも5倍であることを特徴とする請求項18に記載の発光装置。
- アルミニウムからなる基板に、陽極酸化処理を行うことで、アルマイト保護層を形成し、金属基板部を製造する工程と、
セラミック粒子を含有させて熱伝導性を高めたエポキシ系樹脂をシート状に加工したものと、銅からなる金属シートと、を貼り合わせて得られる複合シートを、上記金属基板部に貼り合わせて、導電層および第1の絶縁層を形成する工程と、
上記導電層から、エッチングにより、配線パターンを形成する工程と、
上記第1の絶縁層および上記配線パターンの上に、上記第1の絶縁層よりも低い熱伝導性を有すると共に上記第1の絶縁層よりも高い光反射性を有する第2の絶縁層を塗布により形成し、さらに発光素子の電極と電気的に接続させる上記配線パターンの電極端子部を露出させる工程と、
上記電極端子部を金属メッキによって被覆する工程と、を含んでいることを特徴とする発光装置用基板の製造方法。
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