WO2015029811A1 - 接合体及びパワーモジュール用基板 - Google Patents
接合体及びパワーモジュール用基板 Download PDFInfo
- Publication number
- WO2015029811A1 WO2015029811A1 PCT/JP2014/071524 JP2014071524W WO2015029811A1 WO 2015029811 A1 WO2015029811 A1 WO 2015029811A1 JP 2014071524 W JP2014071524 W JP 2014071524W WO 2015029811 A1 WO2015029811 A1 WO 2015029811A1
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- Prior art keywords
- ceramic substrate
- layer
- power module
- substrate
- paste
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 301
- 239000000919 ceramic Substances 0.000 claims abstract description 233
- 239000000463 material Substances 0.000 claims abstract description 150
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- 239000002184 metal Substances 0.000 claims abstract description 61
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 52
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
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- 229910017755 Cu-Sn Inorganic materials 0.000 claims description 57
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- 239000000945 filler Substances 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
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- DOOTYTYQINUNNV-UHFFFAOYSA-N Triethyl citrate Chemical compound CCOC(=O)CC(O)(C(=O)OCC)CC(=O)OCC DOOTYTYQINUNNV-UHFFFAOYSA-N 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- IGODOXYLBBXFDW-UHFFFAOYSA-N alpha-Terpinyl acetate Chemical compound CC(=O)OC(C)(C)C1CCC(C)=CC1 IGODOXYLBBXFDW-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3026—Mn as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
- B23K35/325—Ti as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/123—Metallic interlayers based on iron group metals, e.g. steel
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
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- C04B2237/368—Silicon nitride
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- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a joined body in which a ceramic member and a Cu member are joined, and a power module substrate in which a circuit layer is formed on one surface of a ceramic substrate.
- a semiconductor device such as an LED or a power module has a structure in which a semiconductor element is bonded on a circuit layer made of a conductive material.
- a power semiconductor element for high power control used for controlling an electric vehicle such as wind power generation or an electric vehicle generates a large amount of heat.
- a substrate on which such a power semiconductor element is mounted for example, a power module substrate in which a metal plate having excellent conductivity is bonded as a circuit layer to one surface of a ceramic substrate made of AlN (aluminum nitride) or the like. Widely used in the past.
- a metal plate may be joined as a metal layer to the other surface of the ceramic substrate.
- the power module substrate shown in Patent Document 1 has a structure in which a circuit layer is formed by bonding a Cu plate (Cu member) to one surface of a ceramic substrate (ceramic member).
- the Cu plate is bonded to one surface of the ceramic substrate by performing heat treatment in a state where the Cu plate is disposed with the Cu—Mg—Ti brazing material interposed.
- Patent Document 1 when a ceramic substrate and a Cu plate are joined via a Cu—Mg—Ti brazing material to form a circuit layer, a Cu / Mg—Ti brazing material forms a Cu interface at the joining interface between the ceramic substrate and the brazing material.
- a thick intermetallic compound layer containing Mg, Ti, or Ti is formed.
- the intermetallic compound layer formed at the bonding interface between the ceramic substrate and the brazing material is hard, the thermal stress generated in the ceramic substrate when a cooling cycle is applied to the power module substrate increases, and the ceramic substrate There was a problem that cracks were likely to occur.
- a ceramic substrate and a Cu plate are joined via a brazing material, if a hard intermetallic compound layer is formed thickly at the joining interface between the ceramic substrate and the brazing material, the ceramic substrate and the circuit layer are joined. The rate deteriorated, and there was a possibility that good bonding could not be achieved.
- the present invention has been made in view of the above-described circumstances, and suppresses the generation of cracks in the ceramic member when the ceramic member and the Cu member are bonded well and a thermal cycle is applied.
- An object of the present invention is to provide a bonded body and a power module substrate.
- the bonded body according to the first aspect of the present invention is a Cu-P-Sn-based brazing material and a Ti material in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are used.
- a Cu—Sn layer in which Sn is dissolved in Cu is formed at the bonding interface between the ceramic member and the Cu member, and the Cu—Sn layer includes a Cu—Sn layer.
- P and Ti-containing intermetallic compounds are dispersed.
- Cu contained in the Cu—P—Sn based brazing material is taken into the intermetallic compound at the joining interface between the ceramic member and the Cu member, whereby Cu A —Sn layer is formed, and intermetallic compounds are dispersed in this Cu—Sn layer. That is, since the hard intermetallic compound layer is not formed at the bonding interface between the ceramic member and the Cu—Sn layer, the thermal stress generated in the ceramic member when a cooling cycle is applied can be reduced. As a result, generation of cracks in the ceramic member can be suppressed. In addition, since a hard intermetallic compound layer is not formed at the bonding interface between the ceramic member and the Cu—Sn layer, the bonding rate between the ceramic member and the Cu member is improved, and the ceramic member and the Cu member are bonded well. ing.
- a power module substrate is a ceramic substrate made of the above-mentioned joined body, made of the ceramic member, and a Cu—P—Sn brazing material and a Ti material on the first surface of the ceramic substrate.
- a Cu—Sn layer in which Sn is dissolved in Cu is formed at the bonding interface between the ceramic substrate and the circuit layer.
- an intermetallic compound containing P and Ti is dispersed in the Cu—Sn layer.
- P contained in the Cu—P—Sn brazing material is taken into the intermetallic compound at the bonding interface between the ceramic substrate and the circuit layer.
- a Cu—Sn layer is formed, and an intermetallic compound is dispersed in the Cu—Sn layer. That is, since a hard intermetallic compound layer is not formed at the bonding interface between the ceramic substrate and the Cu—Sn layer, the thermal stress generated in the ceramic substrate when a cooling cycle is applied can be reduced. As a result, generation of cracks in the ceramic substrate can be suppressed.
- a hard intermetallic compound layer is not formed at the bonding interface between the ceramic substrate and the Cu—Sn layer, the bonding rate between the ceramic substrate and the circuit layer is improved, and the ceramic substrate and the circuit layer are bonded well.
- a metal layer is formed on the second surface of the ceramic substrate.
- the metal layer is formed on the second surface of the ceramic substrate, the heat on the ceramic substrate side can be efficiently dissipated through the metal layer.
- the metal layer is formed by bonding a Cu plate made of Cu or a Cu alloy to the second surface of the ceramic substrate via a Cu—P—Sn-based brazing material and a Ti material.
- a Cu—Sn layer in which Sn is dissolved in Cu is formed at the bonding interface with the layer, and an intermetallic compound containing P and Ti is preferably dispersed in the Cu—Sn layer. .
- the metal layer may be made of Al or an Al alloy.
- the metal layer made of Al or Al alloy has low strength, it is possible to reduce the thermal stress generated in the ceramic substrate when a cooling cycle is applied.
- the joined body according to the present embodiment is a power module substrate 10 in which a ceramic substrate 11 that is a ceramic member and a Cu plate 22 (circuit layer 12) that is a Cu member are joined.
- the power module 1 provided with the board
- the power module 1 includes a power module substrate 10 on which a circuit layer 12 is disposed, and a semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the circuit layer 12 via a bonding layer 2. ing.
- the power module substrate 10 is provided on a ceramic substrate 11 having a first surface and a second surface, and a first surface (an upper surface in FIG. 2) which is one surface of the ceramic substrate 11.
- the circuit layer 12 is provided.
- the ceramic substrate 11 is made of ceramics such as AlN (aluminum nitride), Si 3 N 4 (silicon nitride), and Al 2 O 3 (alumina) having high insulating properties.
- the ceramic substrate 11 is made of AlN (aluminum nitride) having excellent heat dissipation.
- the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.
- the circuit layer 12 is formed by bonding a conductive Cu or Cu alloy metal plate (Cu plate 22) to the first surface of the ceramic substrate 11 via a Cu—P—Sn brazing material. ing.
- the Cu plate 22 may be, for example, oxygen-free copper, deoxidized copper, tough pitch copper, or the like, and is oxygen-free copper in this embodiment. Further, the thickness of the Cu plate 22 is set within a range of 0.1 to 1.0 mm, and in this embodiment, it is set to 0.6 mm.
- Cu—P—Sn brazing material specifically, Cu—P—Sn brazing material, Cu—P—Sn—Ni based brazing material, Cu—P—Sn—Zn based brazing material, Cu—P— Examples thereof include a Sn—Mn brazing material and a Cu—P—Sn—Cr brazing material.
- the Cu—P—Sn brazing material preferably contains 3 mass% to 10 mass% of P and 0.5 mass% to 25 mass% of Sn.
- the Cu—P—Sn—Ni brazing material 25 is used as the Cu—P—Sn brazing material as the Cu—P—Sn brazing material.
- the Cu—P—Sn brazing material is used in the form of a foil, and its thickness is preferably in the range of 5 ⁇ m to 150 ⁇ m.
- the melting point of the Cu—P—Sn brazing material is 710 ° C. or less, and the melting point of the Cu—P—Sn—Ni brazing material 25 used in this embodiment is 580 ° C.
- the solidus temperature of the Cu—P—Sn brazing material is the melting point of the Cu—P—Sn brazing material.
- the circuit layer 12 is a state in which a Ti paste 24 as a Ti material, a Cu—P—Sn—Ni brazing material 25, and a Cu plate 22 made of oxygen-free copper are sequentially laminated on the first surface of the ceramic substrate 11. These are formed by heat-treating and bonding the Cu plate 22 (see FIG. 5).
- the Ti paste is, for example, a paste containing Ti powder, a resin, and a solvent.
- the resin for example, ethyl cellulose, methyl cellulose, polymethyl methacrylate, acrylic resin, alkyd resin, or the like can be used.
- the solvent for example, methyl cellosolve, ethyl cellosolve, terpineol, toluene, texanol, triethyl citrate and the like can be used. Further, the purity of the Ti powder may be 99.4% or more. In this embodiment, a Ti powder having a purity of 99.6% is used. Note that the thickness of the circuit layer 12 is set in a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the present embodiment.
- FIG. 3 shows an electron micrograph of a bonding interface between the ceramic substrate 11 and the circuit layer 12 and a schematic explanatory diagram thereof.
- a Cu—Sn layer 14 is formed as shown in FIG.
- an intermetallic compound 17 containing P, Ni, and Ti is dispersed.
- the Cu—Sn layer 14 is a layer in which Sn is dissolved in Cu.
- the Cu—Sn layer 14 is a layer formed by incorporating P and Ni contained in the Cu—P—Sn—Ni brazing material 25 into the intermetallic compound 17.
- the thickness of the Cu—Sn layer 14 may be 1 ⁇ m or more and 140 ⁇ m or less.
- the intermetallic compound 17 is formed by combining P and Ni contained in the Cu—P—Sn—Ni brazing material 25 with Ti of Ti powder.
- the intermetallic compound 17 has a Cu—Ni—Ti phase 17a, a P—Ti phase 17b, and a P—Ni—Ti phase 17c, as shown in FIG.
- the Cu—Ni—Ti phase 17a, the P—Ti phase 17b, and the P—Ni—Ti phase 17c are formed in an annual ring shape from the inside so as to surround the Ti particles 18 existing in the Cu—Sn layer 14. Is formed.
- the mold inclusions are dispersed.
- the Ti particles 18 are not present, and only the intermetallic compound 17 is formed in an annual ring shape.
- the Cu—Ni—Ti phase 17a, the P—Ti phase 17b, and the P—Ni—Ti phase 17c constituting the intermetallic compound 17 formed in this annual ring shape are partially lost and discontinuous. Sometimes.
- the semiconductor element 3 is made of a semiconductor material such as Si.
- the semiconductor element 3 and the circuit layer 12 are bonded via the bonding layer 2.
- the bonding layer 2 is made of, for example, a Sn—Ag, Sn—In, or Sn—Ag—Cu solder material.
- a Ti paste 24 is applied to the first surface (the upper surface in FIG. 5) which is one surface of the ceramic substrate 11 by a screen printing method and then dried (Ti paste application step S01). ).
- the particle size of the Ti powder contained in the Ti paste 24 is 5 ⁇ m or more and 40 ⁇ m or less.
- content of Ti powder in Ti paste 24 shall be 40 mass% or more and 90 mass% or less.
- the Ti paste 24 is preferably applied so that the Ti amount is 1 mg / cm 2 or more and 20 mg / cm 2 or less. More preferably, it is applied so that the amount of Ti is 2 mg / cm 2 or more and 10 mg / cm 2 or less.
- the drying is preferably performed at 120 ° C. to 150 ° C. for 10 minutes to 30 minutes.
- the Cu—P—Sn—Ni brazing material 25 and the Cu plate 22 to be the circuit layer 12 are sequentially laminated at the position where the Ti paste 24 on the first surface of the ceramic substrate 11 is disposed (lamination step S02). . That is, between the ceramic substrate 11 and the Cu plate 22, the Ti paste 24 is disposed on the ceramic substrate 11 side, and the Cu—P—Sn—Ni brazing material 25 is disposed. The arrangement of the Ti paste 24 and the Cu—P—Sn—Ni brazing material 25 can be reversed. In this case, a Cu—P—Sn—Ni brazing material 25 is disposed on the ceramic substrate 11 side, and a Ti paste 24 is disposed on the Cu plate 22 side.
- the thickness of the Ti paste 24 printed on the first surface of the ceramic substrate 11 is in the range of 10 ⁇ m to 200 ⁇ m after drying.
- the composition of the Cu—P—Sn—Ni brazing material 25 is set to Cu-7 mass% P-15 mass% Sn-10 mass% Ni.
- the thickness of the Cu—P—Sn—Ni brazing material 25 is in the range of 5 ⁇ m to 150 ⁇ m, and in this embodiment, the thickness of the Cu—P—Sn—Ni brazing material 25 is 30 ⁇ m.
- the ceramic substrate 11, the Ti paste 24, the Cu—P—Sn—Ni brazing material 25, and the Cu plate 22 are pressurized in the stacking direction (pressure 1 to 35 kgf / cm 2 (0.10 MPa or more and 3.43 MPa or less)).
- the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
- the heating temperature is in the range of 600 ° C. to 650 ° C.
- the heating time is 30 minutes or more. It is set within the range of 360 minutes or less.
- the Cu—P—Sn—Ni brazing filler metal 25 is melted to form a liquid phase, and the Ti paste 24 dissolves in this liquid phase and the liquid phase is solidified.
- the Cu plate 22 is joined.
- P and Ni contained in the Cu—P—Sn—Ni brazing material 25 are combined with Ti powder contained in the Ti paste 24 to form an intermetallic compound 17.
- a Cu—Sn layer 14 that does not contain P and Ni in the parent phase or very little P and Ni in the parent phase is formed.
- the circuit layer 12 is formed in the 1st surface of the ceramic substrate 11, and the board
- the semiconductor element 3 is bonded to the upper surface of the circuit layer 12 of the power module substrate 10 via a solder material (semiconductor element bonding step S04). In this way, the power module 1 according to this embodiment is manufactured.
- the power module substrate 10 configured as described above, P and Cu contained in the Cu—P—Sn—Ni brazing material 25 at the bonding interface between the ceramic substrate 11 and the circuit layer 12.
- Ni the intermetallic compound 17
- the intermetallic compound 17 is dispersed in the Cu—Sn layer 14. That is, since a hard intermetallic compound layer is not formed at the bonding interface between the ceramic substrate 11 and the Cu—Sn layer 14, thermal stress generated in the ceramic substrate 11 when a cooling cycle is applied can be reduced. As a result, generation of cracks in the ceramic substrate 11 can be suppressed.
- the circuit layer 12 made of the Cu plate 22 is formed on the first surface of the ceramic substrate 11, the heat from the semiconductor element 3 is generated. It can be spread and diffused to the ceramic substrate 11 side. Moreover, since the deformation resistance of the Cu plate 22 is relatively large, the deformation of the circuit layer 12 is suppressed when a cooling cycle is applied, and the deformation of the bonding layer 2 that bonds the semiconductor element 3 and the circuit layer 12 is suppressed. Is done. As a result, bonding reliability can be improved.
- the Ti paste 24 and the Cu—P—Sn—Ni brazing material 25 are interposed between the ceramic substrate 11 and the Cu plate 22. Heat treatment is performed at Therefore, Ti dissolves in the liquid phase in which the Cu—P—Sn—Ni brazing material 25 is melted during heating, and the wettability between the liquid phase of the Cu—P—Sn—Ni brazing material 25 and the ceramic substrate 11 is improved. .
- the heating temperature when the heating temperature is 600 ° C. or higher, the Cu—P—Sn—Ni brazing material 25 can be reliably melted at the bonding interface between the ceramic substrate 11 and the Cu plate 22.
- the ceramic substrate 11 and the Cu plate 22 can be reliably bonded.
- heating temperature when heating temperature is 650 degrees C or less, it can suppress that the ceramic substrate 11 heat-deteriorates. At the same time, the thermal stress generated in the ceramic substrate 11 can be reduced. For this reason, in the present embodiment, the heating temperature is set in the range of 600 ° C. or higher and 650 ° C. or lower.
- the pressure applied is 1 kgf / cm 2 (0.10 MPa) or more
- the ceramic substrate 11 or the Ti paste 24 on the ceramic substrate 11
- the Cu—P—Sn—Ni solder are used. Since the liquid phase with the material 25 can be adhered, the ceramic substrate 11 and the Cu—Sn layer 14 can be satisfactorily bonded.
- the applied pressure is 35 kgf / cm 2 (3.43 MPa) or less, the occurrence of cracks in the ceramic substrate 11 can be suppressed.
- the pressure applied is in the range of 1 kgf / cm 2 or more 35 kgf / cm 2 or less (0.10 MPa or more 3.43MPa or less).
- the heating time is 30 minutes or longer, P and Ti powder contained in the molten Cu—P—Sn—Ni brazing material 25 at the bonding interface between the ceramic substrate 11 and the Cu plate 22 are used. Since a sufficient time for bonding with Ti contained in is ensured, a Cu—Sn layer can be reliably formed on the ceramic substrate 11 side. Further, even if the heating time exceeds 360 minutes, the bonding property between the ceramic substrate 11 and the circuit layer 12 is not improved more than when the heating time is 360 minutes. Furthermore, when the heating time exceeds 360 minutes, the productivity is lowered. For this reason, in this embodiment, the heating time is set within a range of 30 minutes to 360 minutes. In the present embodiment, since the Cu—P—Sn—Ni brazing material 25 whose melting point is 580 ° C. is used, a liquid phase of the brazing material can be formed at a low temperature.
- FIG. 6 shows a power module 101 including the power module substrate 110 according to the second embodiment.
- This power module 101 includes a power module substrate 110 in which a circuit layer 112 is disposed on a first surface of a ceramic substrate 11, and one surface (upper surface in FIG. 6) of the circuit layer 112 via a bonding layer 2.
- the bonded semiconductor element 3 and a heat sink 130 disposed on the other side (lower side in FIG. 6) of the power module substrate 110 are provided.
- the power module substrate 110 includes a ceramic substrate 11, a circuit layer 112 disposed on a first surface (upper surface in FIG. 7) that is one surface of the ceramic substrate 11, and a ceramic substrate. 11 and a metal layer 113 disposed on the second surface (the lower surface in FIG. 7), which is the other surface.
- the ceramic substrate 11 is made of AlN (aluminum nitride) having excellent heat dissipation.
- the circuit layer 112 has a Ti paste 24 as a Ti material, a Cu—P—Sn—Ni brazing material 25, and a Cu plate 122 made of oxygen-free copper in this order on the first surface of the ceramic substrate 11. In a laminated state, these are heat-treated to bond the Cu plate 122 (see FIG. 9).
- the thickness of the circuit layer 112 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the second embodiment.
- a Cu—Sn layer (first Cu—Sn layer) 14 is formed at the bonding interface between the ceramic substrate 11 and the circuit layer 112 as in the first embodiment.
- an intermetallic compound (first intermetallic compound) 17 containing P, Ni, and Ti is dispersed.
- the metal layer 113 is formed by bonding a Cu or Cu alloy metal plate to the second surface, which is the other surface of the ceramic substrate 11, via a Cu—P—Sn brazing material and a Ti material. ing.
- the metal layer 113 is formed by laminating a Ti paste 24 as a Ti material, a Cu—P—Sn—Ni brazing material 25, and a Cu plate 123 made of oxygen-free copper on the second surface of the ceramic substrate 11. These are formed by heat-treating and bonding the Cu plate 123 (see FIG. 9).
- the thickness of the metal layer 113 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the present embodiment.
- a Cu—Sn layer (second Cu—Sn layer) 14 is formed at the bonding interface between the ceramic substrate 11 and the metal layer 113, similarly to the bonding interface between the ceramic substrate 11 and the circuit layer 112.
- an intermetallic compound (second intermetallic compound) 17 containing P, Ni, and Ti is dispersed. That is, the Cu—Sn layer (second Cu—Sn layer) 14 on the metal layer 113 side is the same as the Cu—Sn layer (first Cu—Sn layer) 14 on the circuit layer 112 side and the intermetallic compound ( The second intermetallic compound) 17 has substantially the same configuration as the intermetallic compound (first intermetallic compound) 17 on the circuit layer 112 side.
- the heat sink 130 is for dissipating heat from the power module substrate 110 described above.
- the heat sink 130 is made of Cu or Cu alloy, and in this embodiment is made of oxygen-free copper.
- the heat sink 130 is provided with a flow path 131 through which a cooling fluid flows.
- the heat sink 130 and the metal layer 113 are joined by a solder layer 132 made of a solder material.
- a Ti paste 24 is applied by screen printing to the first surface (upper surface in FIG. 9) and the second surface (lower surface in FIG. 9) of the ceramic substrate 11, and then dried (Ti Paste application step S11).
- a Cu—P—Sn—Ni brazing material 25 and a Cu plate 122 to be the circuit layer 112 are sequentially laminated on the first surface of the ceramic substrate 11 (first lamination step S12).
- a Cu—P—Sn—Ni brazing material 25 and a Cu123 plate to be the metal layer 113 are sequentially laminated on the second surface of the ceramic substrate 11 (second lamination step S13). That is, between the ceramic substrate 11 and the Cu plates 122 and 123, the Ti paste 24 is disposed on the ceramic substrate 11 side, and the Cu—P—Sn—Ni brazing material 25 is disposed on the Cu plates 122 and 123 side.
- the arrangement of the Ti paste 24 and the Cu—P—Sn—Ni brazing material 25 can be reversed.
- the Cu—P—Sn—Ni brazing material 25 is disposed on the ceramic substrate 11 side
- the Ti paste 24 is disposed on the Cu plates 122 and 123 side.
- the ceramic substrate 11, the Ti paste 24, the Cu—P—Sn—Ni brazing material 25, and the Cu plates 122 and 123 are pressed in the stacking direction (pressure 1 to 35 kgf / cm 2 (0.10 to 3.43 MPa). )), It is charged in a vacuum heating furnace and heated (heat treatment step S14).
- the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
- the heating temperature is in the range of 600 ° C. to 650 ° C.
- the heating time is 30 minutes. The range of 360 minutes or less is set.
- the Cu—P—Sn—Ni brazing material 25 is melted to form a liquid phase, and the Ti paste 24 is melted and solidified in the liquid phase, whereby the ceramic substrate 11 and the Cu plate 122 are melted. , 123 are joined together.
- the circuit layer 112 is formed on the first surface of the ceramic substrate 11 and the metal layer 113 is formed on the second surface, and the power module substrate 110 according to the present embodiment is manufactured.
- the heat sink 130 is bonded to the lower surface of the metal layer 113 of the power module substrate 110 via a solder material (heat sink bonding step S15).
- the semiconductor element 3 is bonded to the upper surface of the circuit layer 112 of the power module substrate 110 via a solder material (semiconductor element bonding step S16). In this way, the power module 101 according to this embodiment is manufactured.
- the power module substrate 110 according to the second embodiment configured as described above has the same effects as the power module substrate 10 described in the first embodiment.
- the metal layer 113 made of the Cu plate 123 is formed on the second surface of the ceramic substrate 11, so that the heat from the semiconductor element 3 can be efficiently transferred through the metal layer 113. Can be dissipated.
- the bonding rate between the ceramic substrate 11 and the metal layer 113 is improved, and the ceramic substrate 11 and the metal layer 113. And are well joined.
- the heat sink 130 since the heat sink 130 is bonded to the metal layer 113, heat can be efficiently dissipated from the heat sink 130.
- the circuit layer 112 is formed on the first surface of the ceramic substrate 11 and the metal layer 113 is formed on the second surface at the same time.
- the manufacturing process can be simplified and the manufacturing cost can be reduced.
- FIG. 10 shows a power module 201 including a power module substrate 210 according to the third embodiment.
- This power module 201 includes a power module substrate 210 in which a circuit layer 212 is disposed on the first surface of the ceramic substrate 11, and one surface (upper surface in FIG. 10) of the circuit layer 212 via the bonding layer 2.
- the semiconductor element 3 is bonded, and the heat sink 230 is bonded to the other side (lower side in FIG. 10) of the power module substrate 210 via a bonding layer 232.
- the power module substrate 210 includes a ceramic substrate 11, a circuit layer 212 disposed on a first surface (upper surface in FIG. 11) that is one surface of the ceramic substrate 11, and a ceramic substrate. 11, and a metal layer 213 disposed on the second surface (the lower surface in FIG. 11) of the other surface.
- the ceramic substrate 11 is made of AlN (aluminum nitride) having excellent heat dissipation.
- the circuit layer 212 is formed by heating a Cu—P—Sn—Ni brazing material 25, a Ti paste 24 as a Ti material, and a Cu plate 222 made of oxygen-free copper in this order on the first surface of the ceramic substrate 11. Thus, the Cu plate 222 is joined (see FIG. 13).
- the thickness of the circuit layer 212 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the third embodiment.
- the Cu—Sn layer 14 is formed at the bonding interface between the ceramic substrate 11 and the circuit layer 212 as in the first embodiment.
- an intermetallic compound 17 containing P, Ni, and Ti is dispersed.
- the metal layer 213 is formed by bonding an Al or Al alloy metal plate to the second surface, which is the other surface of the ceramic substrate 11, via a bonding material 227.
- the metal layer 213 is formed by bonding an Al plate 223 having a purity of 99.99 mass% or more to the second surface of the ceramic substrate 11 (see FIG. 13).
- the thickness of the metal layer 213 is set within a range of 0.1 mm to 3.0 mm, and is set to 1.6 mm in the present embodiment.
- the heat sink 230 is made of Al or an Al alloy, and is made of A6063 (Al alloy) in the present embodiment.
- the heat sink 230 is provided with a flow path 231 through which a cooling fluid flows.
- the heat sink 230 and the metal layer 213 are joined by an Al—Si brazing material.
- the Ti paste 24 is applied to the lower surface (bonding surface) of the Cu plate 222 to be the circuit layer 212 by a screen printing method and then dried (Ti paste application step S21).
- the Cu—P—Sn—Ni brazing material 25 and the Cu plate 222 are sequentially laminated on the first surface (the upper surface in FIG. 13) of the ceramic substrate 11 (first lamination step S22).
- an Al plate 223 to be the metal layer 213 is sequentially laminated on the second surface (the lower surface in FIG. 13) of the ceramic substrate 11 via the bonding material 227 (second lamination step S23).
- a heat sink 230 is laminated below the Al plate 223 via the bonding material 242 (third lamination step S24).
- the Ti paste 24 printed on the Cu plate 222 and the Cu—P—Sn—Ni brazing material 25 are arranged so as to overlap each other.
- the bonding materials 227 and 242 are Al—Si brazing materials containing Si as the melting point lowering element.
- the Al—7.5 mass% Si brazing material is used. Is used.
- the ceramic substrate 11, the Cu—P—Sn—Ni brazing material 25, the Ti paste 24, the Cu plate 222, the bonding material 227, the Al plate 223, the bonding material 242, and the heat sink 230 are pressurized in the stacking direction (pressure 1 In a state of ⁇ 35 kgf / cm 2 (0.10 to 3.43 MPa)), it is charged in a vacuum heating furnace and heated (heat treatment step S25).
- the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
- the heating temperature is in the range of 600 ° C. to 650 ° C.
- the heating time is 30 minutes. It is set within the range of 360 minutes or less.
- the Cu—P—Sn—Ni brazing filler metal 25 melts to form a liquid phase, and the Ti paste 24 melts and solidifies in this liquid phase, whereby the ceramic substrate 11 and the Cu plate 222 are melted. And are joined.
- the bonding material 227 is melted to form a liquid phase, and the liquid phase is solidified, whereby the ceramic substrate 11 and the Al plate 223 are bonded via the bonding material 227.
- the bonding material 242 is melted to form a liquid phase, and the liquid phase is solidified, whereby the Al plate 223 and the heat sink 230 are bonded via the bonding material 242.
- the semiconductor element 3 is bonded to the upper surface of the circuit layer 212 of the power module substrate 210 via a solder material (semiconductor element bonding step S26). In this way, the power module 201 according to the third embodiment is manufactured.
- the power module substrate 210 according to the third embodiment configured as described above has the same effects as the power module substrate 10 described in the first embodiment. Moreover, in the power module substrate 210 according to the third embodiment, the metal layer 213 formed by bonding the Al plate 223 to the second surface of the ceramic substrate 11 is formed. It can be efficiently dissipated through the metal layer 213. In addition, since Al has a relatively low deformation resistance, the thermal stress generated between the power module substrate 210 and the heat sink 230 can be absorbed by the metal layer 213 when a cooling cycle is applied. As a result, generation of cracks in the ceramic substrate 11 can be suppressed.
- the circuit layer 212 and the metal layer 213 are simultaneously bonded to the first surface and the second surface of the ceramic substrate 11, respectively, and the heat sink 230 is also made of metal. Since it is simultaneously bonded to the layer 213, the manufacturing process can be simplified and the manufacturing cost can be reduced.
- the Ti paste 24 is applied to the lower surface (bonding surface) of the Cu plate 222, but the Ti paste 24 can also be applied to the first surface of the ceramic substrate 11. In this case, the Ti paste 24 is disposed on the ceramic substrate 11 side, and the Cu—P—Sn—Ni brazing material 25 is disposed on the Cu plate 222 side.
- FIG. 14 shows a power module substrate 310 according to the fourth embodiment.
- the power module substrate 310 includes a ceramic substrate 11 and a circuit layer 312 disposed on one surface (the upper surface in FIG. 14) of the ceramic substrate 11.
- the ceramic substrate 11 is made of AlN (aluminum nitride) having excellent heat dissipation.
- a Cu—P—Sn—Ni brazing material 25 As a Ti material, and a Cu plate 322 made of oxygen-free copper are sequentially laminated on the first surface, which is one surface of the ceramic substrate 11. These are formed by heat-treating and bonding the Cu plate 322 (see FIG. 17).
- the Ti paste 324 in the present embodiment is a paste containing TiH 2 powder (titanium hydride powder), a resin, a solvent, and a dispersant.
- the composition of the Ti paste 324 is such that the content of TiH 2 powder is in the range of 3 mass% to 50 mass%, and the remainder is an organic component (resin + solvent + dispersant + plasticizer).
- the viscosity of the Ti paste 324 is in the range of 10 Pa ⁇ s to 500 Pa ⁇ s, and preferably in the range of 50 Pa ⁇ s to 300 Pa ⁇ s.
- the particle size of the TiH 2 powder is 15 ⁇ m or less, and preferably 5 ⁇ m or less.
- the resin for example, ethyl cellulose, acrylic resin, or the like can be used. In this embodiment, an acrylic resin is used.
- the solvent for example, terpineol, acetate, citrate and the like can be used. In this embodiment, ⁇ -terpineol is used.
- the dispersant an anionic surfactant, a cationic surfactant, or the like can be used. In this embodiment, an anionic surfactant is used.
- the plasticizer dibutyl phthalate, dibutyl adipate, or the like can be used.
- a Cu—Sn layer 14 is formed at the bonding interface between the ceramic substrate 11 and the circuit layer 312 as shown in FIG.
- an intermetallic compound 317 containing P, Ni, and Ti is dispersed.
- the intermetallic compound 317 is dispersed in layers so as to correspond to the position where the Ti paste 324 is disposed.
- a Cu 3 P phase 319 is observed at the bonding interface between the ceramic substrate 11 and the circuit layer 312. This is presumed that P that did not react with Ti was formed by reacting with Cu.
- a Ti paste 324 is applied to the lower surface (bonding surface) of the Cu plate 322 to be the circuit layer 312 by a screen printing method and then dried (Ti paste application step S31).
- the application amount of the Ti paste 324 is adjusted so that the film thickness after drying is in the range of 5 ⁇ m to 200 ⁇ m.
- the amount of TiH 2 applied to the lower surface of the Cu plate 322 is in the range of 0.01 mg / cm 2 to 12 mg / cm 2 . More preferably, may TiH 2 amount is applied so as to be 0.04 mg / cm 2 or more 8 mg / cm 2 within the following ranges.
- the Cu—P—Sn—Ni brazing material 25 and the Cu plate 322 are sequentially laminated on the first surface (the upper surface in FIG. 1) of the ceramic substrate 11 (lamination step S32).
- the ceramic substrate 11, the Cu—P—Sn—Ni brazing material 25, the Ti paste 324, and the Cu plate 322 are pressed in the stacking direction (pressure 1 to 35 kgf / cm 2 (0.10 to 3.43 MPa)).
- it inserts in a vacuum heating furnace and heats (heat-treatment process S33).
- the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
- the heating temperature is in the range of 600 ° C. to 650 ° C.
- the heating time is 30 minutes. It is set within the range of 360 minutes or less.
- the heating time is more preferably in the range of 30 minutes to 240 minutes.
- the Cu—P—Sn—Ni brazing filler metal 25 is melted to form a liquid phase, and the Ti paste 324 is dissolved and solidified in the liquid phase, whereby the ceramic substrate 11 and the Cu plate 322 are formed. And will be joined. As a result, the power module substrate 310 according to the fourth embodiment is manufactured.
- the power module substrate 310 according to the fourth embodiment configured as described above has the same effects as the power module substrate 10 described in the first embodiment. Further, in the power module substrate 310 according to the fourth embodiment, since the Ti paste 324 containing fine TiH 2 powder is used, the surface area of the TiH 2 powder is large, and the reaction of Ti proceeds quickly. This makes it possible to reliably bond the ceramic substrate 11 and the copper plate 322 even under relatively short time conditions.
- the Ti paste 324 is applied to the lower surface (joint surface) of the Cu plate 322, but the Ti paste 324 can also be applied to the first surface of the ceramic substrate 11. In this case, the Ti paste 324 is disposed on the ceramic substrate 11 side, and the Cu—P—Sn—Ni brazing material 25 is disposed on the Cu plate 322 side.
- the case of using the screen printing method when applying the Ti paste has been described, but various means such as an offset printing method and a photosensitive process can be employed.
- the case where the Ti paste and the Cu—P—Sn brazing material are disposed between the ceramic substrate and the Cu plate has been described.
- the present invention is not limited to the Ti paste,
- Ti powder and Cu—P—Sn brazing material may be arranged between the ceramic substrate and the Cu plate.
- a step of degreasing the Ti paste can be provided between the Ti paste application step and the lamination step. In this case, the amount of resin residue contained in the Ti paste is reduced, and the bondability is further improved.
- the case where the circuit layer and the metal layer are simultaneously bonded to the first surface and the second surface of the ceramic substrate has been described, but the circuit layer and the metal layer are separately provided. You may join.
- the case where the circuit layer, the metal layer, and the heat sink are simultaneously bonded has been described. However, the circuit layer and the metal layer may be bonded to the ceramic substrate, and then the metal layer and the heat sink may be bonded. good.
- the case where the metal layer is bonded to the second surface of the ceramic substrate via the Al—Si brazing material has been described. However, the bonding is performed by a transient liquid phase bonding method (TLP), Ag paste, or the like. May be.
- TLP transient liquid phase bonding method
- the case where the heat sink provided with the flow path is used has been described.
- a plate-like thing called a heat sink or a heat sink having pin-like fins may be used.
- grease may be applied between the power module substrate and the heat sink and fixed by screwing or the like.
- the heat sink may not be bonded to the other surface side of the power module substrate (the second surface side of the ceramic substrate).
- the case where the Ti particles are hardly present at the center of the intermetallic compound 317 dispersed at the bonding interface between the ceramic substrate 11 and the circuit layer 312 has been described as an example. As shown in FIG. 2, a core-shell structure having Ti particles in the center may be used. Furthermore, in the fourth embodiment, the case where the Cu 3 P phase 319 is observed at the bonding interface between the ceramic substrate 11 and the circuit layer 312 has been described as an example, but the Cu 3 P phase 319 is not included. May be.
- the Ti paste containing Ti powder or TiH 2 powder it is also possible to use a Ti foil or Ti deposition film instead of the Ti paste.
- the amount of Ti is preferably in the range of 0.01 mg / cm 2 to 3.6 mg / cm 2 . More preferably, or equal to 0.04 mg / cm 2 or more 2.3 mg / cm 2 within the following ranges.
- positioning of Ti foil or Ti vapor deposition film is not specifically limited, Either the ceramic substrate side or the Cu member side may be sufficient.
- a foil brazing material is used as the Cu—P—Sn brazing material, but it is also possible to use a brazing paste using a Cu—P—Sn brazing powder.
- This brazing paste can be produced by using Cu—P—Sn based brazing powder instead of Ti powder in the Ti paste described above.
- brazing material-Ti paste in which the brazing paste and Ti paste are mixed can be used.
- the brazing material-Ti paste is preferably applied to at least one of the ceramic substrate and the Cu plate.
- Example 1 Below, the result of the confirmation experiment (Example 1) conducted in order to confirm the effect of embodiment which concerns on this invention is demonstrated.
- a Cu plate (37 mm ⁇ 37 mm ⁇ thickness 0.3 mm) made of copper was laminated.
- a Ti paste was used as the Ti material. This Ti paste was a paste containing Ti powder having a particle diameter of 10 ⁇ m, an acrylic resin, and texanol.
- Ti paste was apply
- the arrangement of the Ti paste and the Cu—P—Sn brazing material was as shown in Tables 1 and 2.
- the material of the ceramic substrate was AlN
- the thickness was 0.635 mm
- the material was Si 3 N 4
- the thickness was 0.32 mm.
- a Ti foil having a thickness adjusted to the Ti amount shown in Table 2 was used as the Ti material instead of the Ti paste.
- Inventive Examples 1-17 to 1-20 as the Ti material, instead of the Ti paste, a Ti vapor deposition film whose thickness was adjusted to the Ti amount shown in Table 2 was used.
- the laminated ceramic substrate, Cu—P—Sn brazing material, and Cu plate were charged into a vacuum heating furnace in a state of being pressurized at a pressure of 15 kgf / cm 2 (1.47 MPa) in the laminating direction, and heated.
- a Cu plate was joined to the first surface of the ceramic substrate to form a circuit layer.
- the pressure in the vacuum heating furnace was set in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, and the heating temperature and heating time were set to the conditions shown in Tables 1 and 2.
- the power module substrate of Comparative Example 1 was the same as the power module substrate of Examples 1-1 to 1-20 of the present invention except that the ceramic substrate and the circuit layer were joined without using a Ti material. I got it.
- the initial bonding rate between the circuit layer and the ceramic substrate was evaluated for the power module substrate obtained as described above.
- a method for evaluating the bonding rate will be described below.
- the bonding rate at the interface between the ceramic substrate and the circuit layer was evaluated using an ultrasonic flaw detector (FineSAT 200 manufactured by Hitachi Power Solutions), and the bonding rate was calculated from the following equation.
- the initial bonding area is an area to be bonded before bonding, and in this example, the area of the circuit layer (37 mm ⁇ 37 mm) was used.
- the peeling is indicated by the white portion in the joint portion. Therefore, the area of the white portion is defined as the peeling area.
- (Bonding rate (%)) ⁇ (initial bonding area) ⁇ (peeling area) ⁇ / (initial bonding area) ⁇ 100
- Tables 1 and 2 The results of the above evaluation are shown in Tables 1 and 2.
- Example 2 Next, the result of a confirmation experiment (Example 2) conducted to confirm the effect of the embodiment according to the present invention will be described.
- Cu—P—Sn brazing material 37 mm ⁇ 37 mm
- oxygen-free copper on the first and second surfaces of the ceramic substrate (40 mm ⁇ 40 mm) described in Table 3
- Cu plates (37 mm ⁇ 37 mm ⁇ thickness 0.3 mm) were stacked.
- a Ti paste was used as the Ti material. This Ti paste was applied to a ceramic substrate or a Cu plate using the same Ti paste as in Example 1 so that the Ti amount described in Table 3 was obtained by screen printing.
- the arrangement of the Ti paste and the Cu—P—Sn brazing material was as shown in Table 3.
- the thickness was 0.635 mm
- the material was Si 3 N 4
- the thickness was 0.32 mm.
- a Ti foil having a thickness adjusted to the Ti amount shown in Table 3 was used as the Ti material.
- the laminated ceramic substrate, Cu—P—Sn brazing material, and Cu plate were charged into a vacuum heating furnace in a state of being pressurized at a pressure of 15 kgf / cm 2 (1.47 MPa) in the laminating direction, By heating, a Cu plate was joined to the first surface and the second surface of the ceramic substrate to form a circuit layer and a metal layer.
- the pressure in the vacuum heating furnace was set within the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, and the heating temperature and the heating time were set as shown in Table 3.
- the power module substrate of Comparative Example 2 was the same as the power module substrate of Examples 2-1 to 2-15 of the present invention except that the ceramic substrate and the circuit layer were joined without using a Ti material. I got it.
- the initial bonding rate between the circuit layer and the ceramic substrate and the bonding rate after the thermal cycle test were measured. Furthermore, in the thermal cycle test, the number of times until the ceramic substrate of the power module substrate was cracked was measured. The joining rate was evaluated in the same manner as in Example 1. Moreover, the thermal cycle test was done as follows. The results of the above evaluation are shown in Table 3.
- the thermal cycle test uses TSB-51, a thermal shock tester, Espec Corp., and a cycle for 5 minutes at -40 ° C and 5 minutes at 150 ° C in the liquid phase (Fluorinert) for the power module substrate. These were 2000 cycles. In addition, in Table 3, “> 2000” is described for the power module substrate in which the ceramic substrate was not cracked after 2000 cycles of the thermal cycle test.
- Example 3 Next, the result of a confirmation experiment (Example 3) conducted to confirm the effect of the embodiment according to the present invention will be described.
- an Al plate (37 mm ⁇ 37 mm ⁇ 1.6 mm thickness) made of Al having a purity of 99.99 mass% was laminated on the second surface of the ceramic substrate through an Al—Si brazing material.
- a Ti paste was used as the Ti material.
- This Ti paste was applied to a ceramic substrate or a Cu plate using the same Ti paste as in Example 1 so that the Ti amount described in Table 4 was obtained by screen printing.
- the arrangement of the Ti paste and the Cu—P—Sn brazing material was as shown in Table 4.
- the thickness was 0.635 mm
- the thickness was 0.32 mm.
- Inventive Example 3-15 instead of Ti paste, a Ti deposited film whose thickness was adjusted so that the Ti amount shown in Table 4 was obtained was used.
- the laminated ceramic substrate, Ti paste (or Ti vapor deposition film), Cu—P—Sn brazing material, Cu plate, Al—Si brazing material, and Al plate are applied with a pressure of 15 kgf / cm 2 (in the laminating direction). 1.47 MPa)
- the pressure in the vacuum heating furnace was set in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa, and the heating temperature and the heating time were set as shown in Table 4.
- power module substrates of Invention Examples 3-1 to 3-15 were obtained.
- the power module substrate of Comparative Example 3 was the same as the power module substrate of Inventive Examples 3-1 to 3-15 except that the ceramic substrate and the circuit layer were joined without using a Ti material. Obtained.
- a ceramic substrate and a Cu plate were interposed with a Cu—P—Sn brazing material and a Ti material (Ti paste or Ti deposited film) interposed therebetween. Therefore, it was confirmed that the initial bonding rate between the ceramic substrate and the circuit layer was high and that the ceramic substrate was bonded well. In addition, it was confirmed that Examples 3-1 to 3-15 of the present invention had a high bonding rate after the thermal cycle test and high bonding reliability. Furthermore, it was also confirmed that Examples 3-1 to 3-15 of the present invention had a large number of cycles until cracks occurred in the ceramic substrate in the thermal cycle test, and cracks did not easily occur in the ceramic substrate. On the other hand, in Comparative Example 3, the ceramic substrate and the Cu plate (circuit layer) could not be joined because the joining was performed without interposing the Ti material when the ceramic substrate and the Cu plate were joined. .
- Example 4 the result of a confirmation experiment (Example 4) conducted to confirm the effect of the embodiment according to the present invention will be described.
- the ceramic substrate described in Table 5 and a Cu plate made of oxygen-free copper were joined, and the joining rate was evaluated.
- the Ti paste contains TiH 2 powder shown in Table 5, acrylic resin (resin), ⁇ -terpineol (solvent), and an anionic surfactant (dispersant).
- the amount of TiH 2 was controlled as shown in Table 5 by adjusting the content of TiH 2 powder in the Ti paste and the coating amount.
- the ceramic substrate and the Cu plate were joined under the same conditions as in Example 1.
- the Cu—P—Sn brazing material shown in Table 5 was used.
- the heating temperature and the heating time were the conditions shown in Table 5.
- the initial bonding rate between the circuit layer (Cu plate) and the ceramic substrate was evaluated in the same manner as in Example 1 for the power module substrate obtained as described above. The evaluation results are shown in Table 5.
- the joined body and the power module substrate according to the present invention when the ceramic member and the Cu member are satisfactorily joined and a cooling cycle is applied, the occurrence of cracks in the ceramic member can be suppressed. Therefore, the joined body and the power module substrate according to the present invention are suitable for power modules having severe use environments such as power semiconductor elements for large power control used for controlling electric vehicles such as wind power generation and electric vehicles. It is.
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Abstract
Description
本願は、2013年8月26日に、日本に出願された特願2013-175002号に基づき優先権を主張し、その内容をここに援用する。
風力発電、電気自動車等の電気車両などを制御するために用いられる大電力制御用のパワー半導体素子は、発熱量が多い。このため、このようなパワー半導体素子を搭載する基板としては、例えばAlN(窒化アルミニウム)などからなるセラミックス基板の一方の面に導電性の優れた金属板を回路層として接合したパワーモジュール用基板が、従来から広く用いられている。また、セラミックス基板の他方の面に、金属板を金属層として接合することもある。
また、セラミックス基板とCu板とを、ろう材を介して接合する際に、セラミックス基板とろう材との接合界面に硬い金属間化合物層が厚く形成されると、セラミックス基板と回路層との接合率が悪化し、良好に接合できないおそれもあった。
また、セラミックス部材とCu-Sn層との接合界面に硬い金属間化合物層が形成されていないので、セラミックス部材とCu部材との接合率が向上し、セラミックス部材とCu部材とが良好に接合されている。
この場合、セラミックス基板の第二面に金属層が形成されているので、金属層を介してセラミックス基板側の熱を効率的に放散することができる。
この場合、Al又はAl合金からなる金属層は、強度が低いので、冷熱サイクルが負荷された際に、セラミックス基板に生じる熱応力を低減することができる。
以下に、本発明の実施形態について添付した図面を参照して説明する。まず、本発明の第一実施形態について説明する。
本実施形態に係る接合体は、セラミックス部材であるセラミックス基板11と、Cu部材であるCu板22(回路層12)とが接合されてなるパワーモジュール用基板10である。図1に、本実施形態であるパワーモジュール用基板10を備えたパワーモジュール1を示す。
このパワーモジュール1は、回路層12が配設されたパワーモジュール用基板10と、回路層12の一方の面(図1において上面)に接合層2を介して接合された半導体素子3とを備えている。
セラミックス基板11は、絶縁性の高いAlN(窒化アルミニウム)、Si3N4(窒化ケイ素)、Al2O3(アルミナ)等のセラミックスで構成されている。本実施形態では、セラミックス基板11は、放熱性の優れたAlN(窒化アルミニウム)で構成されている。また、セラミックス基板11の厚さは、0.2~1.5mmの範囲内に設定されており、本実施形態では、0.635mmに設定されている。
Cu-P-Sn系のろう材として、具体的には、Cu-P-Snろう材、Cu-P-Sn-Ni系ろう材、Cu-P-Sn-Zn系ろう材、Cu-P-Sn-Mn系ろう材、Cu-P-Sn-Cr系ろう材などが挙げられる。Cu-P-Sn系のろう材には、Pが3mass%以上10mass%以下、Snが0.5mass%以上25mass%以下含有されることが好ましい。本実施形態では、Cu-P-Sn系ろう材としてCu-P-Sn系ろう材としてCu-P-Sn-Niろう材25を用いている。また、Cu-P-Sn系のろう材は箔状で用いられ、その厚さは5μm~150μmの範囲内であることが好ましい。
なお、Cu-P-Sn系ろう材の融点は710℃以下であり、本実施形態で用いられるCu-P-Sn-Niろう材25の融点は580℃である。なお、本実施形態においては、Cu-P-Sn系ろう材の固相線温度をCu-P-Sn系ろう材の融点としている。
樹脂としては、例えば、エチルセルロース、メチルセルロース、ポリメチルメタクリレート、アクリル樹脂、アルキッド樹脂等を用いることができる。
また、溶剤としては、例えば、メチルセルソルブ、エチルセルソルブ、テルピネオール、トルエン、テキサノ-ル、トリエチルシトレート等を用いることができる。また、Ti粉末の純度は99.4%以上としても良く、本実施形態では純度99.6%のTi粉末を用いている。
なお、回路層12の厚さは0.1mm以上1.0mm以下の範囲内に設定されており、本実施形態では、0.6mmに設定されている。
接合層2は、例えばSn-Ag系、Sn-In系、若しくはSn-Ag-Cu系のはんだ材とされている。
まず、図5に示すように、セラミックス基板11の一方の面である第一面(図5において上面)に、スクリーン印刷法により、Tiペースト24を塗布した後、乾燥させる(Tiペースト塗布工程S01)。本実施形態においては、このTiペースト24に含有されるTi粉の粒径は、5μm以上40μm以下とされている。また、Tiペースト24中のTi粉の含有量は、40mass%以上90mass%以下とすることが好ましい。
また、Tiペースト24は、Ti量が1mg/cm2以上20mg/cm2以下となるように塗布するとよい。より好ましくは、Ti量が2mg/cm2以上10mg/cm2以下となるよう塗布するとよい。
また、乾燥は120℃以上150℃以下で、10分以上30分以下の範囲で行うことが好ましい。
なお、Tiペースト24とCu-P-Sn-Niろう材25の配置を逆にすることも可能である。この場合、セラミックス基板11側にCu-P-Sn-Niろう材25が配置され、Cu板22側にTiペースト24が配置される。
また、本実施形態において、Cu-P-Sn-Niろう材25の組成は、Cu-7mass%P-15mass%Sn-10mass%Niとされている。また、Cu-P-Sn-Niろう材25の厚みは、5μm以上150μm以下の範囲とされ、本実施形態では、Cu-P-Sn-Niろう材25の厚みを30μmとしている。
これにより、セラミックス基板11の第一面に回路層12が形成され、本実施形態であるパワーモジュール用基板10が製造される。
このようにして、本実施形態に係るパワーモジュール1が製造される。
さらに、加熱処理工程S03において、加熱時間が30分以上の場合、セラミックス基板11とCu板22との接合界面において、溶融したCu-P-Sn-Niろう材25に含まれるPと、Ti粉に含まれるTiとが結合する時間が十分に確保されるので、セラミックス基板11側にCu-Sn層を確実に形成可能となる。また、加熱時間が360分を超えても、加熱時間が360分の場合以上にセラミックス基板11と回路層12との接合性が向上しない。さらに、加熱時間が360分を超えると生産性が低下してしまう。このような理由のため、本実施形態では、加熱時間は、30分以上360分以下の範囲内に設定されている。
また、本実施形態においては、ろう材の融点が580℃であるCu-P-Sn-Niろう材25を用いているので、低温でろう材の液相を形成することができる。
次に、本発明の第二実施形態について説明する。なお、第一実施形態と同一の構成については、同一の符号を付して記載し、詳細な説明を省略する。
図6に、第二実施形態に係るパワーモジュール用基板110を備えたパワーモジュール101を示す。
このパワーモジュール101は、セラミックス基板11の第一面上に回路層112が配設されたパワーモジュール用基板110と、回路層112の一方の面(図6において上面)に接合層2を介して接合された半導体素子3と、パワーモジュール用基板110の他方側(図6において下側)に配置されたヒートシンク130と、を備えている。
セラミックス基板11は、放熱性の優れたAlN(窒化アルミニウム)で構成されている。
なお、回路層112の厚さは0.1mm以上1.0mm以下の範囲内に設定されており、第二実施形態では、0.6mmに設定されている。
この金属層113の厚さは0.1mm以上1.0mm以下の範囲内に設定されており、本実施形態では、0.6mmに設定されている。
まず、図9に示すように、セラミックス基板11の第一面(図9において上面)及び第二面(図9において下面)に、スクリーン印刷法によりTiペースト24を塗布した後、乾燥させる(Tiペースト塗布工程S11)。
なお、Tiペースト24とCu-P-Sn-Niろう材25の配置を逆にすることも可能である。この場合、セラミックス基板11側にCu-P-Sn-Niろう材25が配置され、Cu板122、123側にTiペースト24が配置される。
これにより、セラミックス基板11の第一面に回路層112が形成されるとともに、第二面に金属層113が形成され、本実施形態であるパワーモジュール用基板110が製造される。
次に、パワーモジュール用基板110の回路層112の上面に、はんだ材を介して半導体素子3を接合する(半導体素子接合工程S16)。
このようにして、本実施形態に係るパワーモジュール101が製造される。
また、パワーモジュール用基板110においては、セラミックス基板11の第二面にCu板123からなる金属層113が形成されているので、半導体素子3からの熱を、金属層113を介して効率的に放散することができる。
また、第二実施形態に係るパワーモジュール用基板110において、金属層113には、ヒートシンク130が接合されているので、ヒートシンク130から熱を効率的に放散することができる。
次に、本発明の第三実施形態について説明する。なお、第一実施形態と同一の構成については、同一の符号を付して記載し、詳細な説明を省略する。
図10に、第三実施形態に係るパワーモジュール用基板210を備えたパワーモジュール201を示す。
このパワーモジュール201は、セラミックス基板11の第一面上に回路層212が配設されたパワーモジュール用基板210と、回路層212の一方の面(図10において上面)に接合層2を介して接合された半導体素子3と、パワーモジュール用基板210の他方側(図10において下側)に接合層232を介して接合されたヒートシンク230と、を備えている。
セラミックス基板11は、放熱性の優れたAlN(窒化アルミニウム)で構成されている。
なお、回路層212の厚さは0.1mm以上1.0mm以下の範囲内に設定されており、第三実施形態では、0.6mmに設定されている。
この金属層213の厚さは0.1mm以上3.0mm以下の範囲内に設定されており、本実施形態では、1.6mmに設定されている。
まず、図13に示すように、回路層212となるCu板222の下面(接合面)に、スクリーン印刷法によりTiペースト24を塗布した後、乾燥させる(Tiペースト塗布工程S21)。
なお、接合材227、242は、本実施形態では、融点降下元素であるSiを含有したAl-Si系ろう材とされており、第三実施形態においては、Al-7.5mass%Siろう材を用いている。
これにより、第三実施形態であるパワーモジュール用基板210が製造される。
このようにして、第三実施形態に係るパワーモジュール201が製造される。
また、第三実施形態に係るパワーモジュール用基板210においては、セラミックス基板11の第二面にAl板223が接合されてなる金属層213が形成されているので、半導体素子3からの熱を、金属層213を介して効率的に放散することができる。また、Alは比較的変形抵抗が低いので、冷熱サイクルが負荷された際に、パワーモジュール用基板210とヒートシンク230との間に生じる熱応力を金属層213によって吸収することができる。その結果、セラミックス基板11に割れが発生することを抑制できる。
なお、本実施形態では、Cu板222の下面(接合面)に、Tiペースト24を塗布したが、セラミックス基板11の第一面にTiペースト24を塗布することもできる。この場合、セラミックス基板11側にTiペースト24が配置され、Cu板222側にCu-P-Sn-Niろう材25が配置される。
次に、本発明の第四実施形態について説明する。なお、第一実施形態と同一の構成については、同一の符号を付して記載し、詳細な説明を省略する。
図14に、第四実施形態に係るパワーモジュール用基板310を示す。
このパワーモジュール用基板310は、図14に示すように、セラミックス基板11と、セラミックス基板11の一方の面(図14において上面)に配設された回路層312と、を備えている。
セラミックス基板11は、放熱性の優れたAlN(窒化アルミニウム)で構成されている。
Tiペースト324の組成は、TiH2粉の含有量が3mass%以上50mass%以下の範囲内とされ、残りが有機成分(樹脂+溶剤+分散剤+可塑剤)とされている。
このTiペースト324の粘度は、10Pa・s以上500Pa・s以下の範囲内とされており、好ましくは50Pa・s以上300Pa・s以下の範囲内とされている。
樹脂としては、例えば、エチルセルロース、アクリル樹脂等を用いることができる。本実施形態では、アクリル樹脂を用いている。
溶剤としては、例えば、テルピネオール系、アセテート系、シトレート系等を用いることができる。本実施形態では、α-テルピネオールを用いている。
分散剤としては、アニオン性界面活性剤、カチオン性界面活性剤等を用いることができる。本実施形態では、アニオン性界面活性剤を用いている。
また、可塑剤としては、フタル酸ジブチル、アジピン酸ジブチル等を用いることができる。
本実施形態では、Tiペースト324が配設された位置に対応するように、金属間化合物317が層状に分散されている。ここで、本実施形態では、金属間化合物317の中心部にはTi粒子がほとんど存在していない。これは、TiH2粉の粒径が微細であることから、TiH2粉に含まれるTiが金属間化合物317の形成に消費されたためと推測される。
また、セラミックス基板11と回路層312との接合界面には、Cu3P相319が観察される。これは、Tiと反応しなかったPがCuと反応することで形成されたものと推測される。
まず、図17に示すように、回路層312となるCu板322の下面(接合面)に、スクリーン印刷法によりTiペースト324を塗布した後、乾燥させる(Tiペースト塗布工程S31)。
本実施形態では、Tiペースト塗布工程S31において、乾燥後の膜厚が5μm以上200μmの範囲内となるように、Tiペースト324の塗布量を調整している。このとき、Cu板322の下面に塗布されるTiH2量は、0.01mg/cm2以上12mg/cm2以下の範囲内とされる。より好ましくは、TiH2量が、0.04mg/cm2以上8mg/cm2以下の範囲内となるよう塗布するとよい。
そして、セラミックス基板11、Cu-P-Sn-Niろう材25、Tiペースト324、Cu板322を積層方向に加圧(圧力1~35kgf/cm2(0.10~3.43MPa))した状態で、真空加熱炉内に装入して加熱する(加熱処理工程S33)。ここで、第四実施形態では、真空加熱炉内の圧力を10-6Pa以上10-3Pa以下の範囲内に、加熱温度を600℃以上650℃以下の範囲内に、加熱時間を30分以上360分以下の範囲内に設定している。なお、加熱時間は30分以上240分以下の範囲内とすることがより好ましい。
これにより、第四実施形態であるパワーモジュール用基板310が製造される。
また、第四実施形態に係るパワーモジュール用基板310においては、微細なTiH2粉を含有するTiペースト324を用いているので、TiH2粉の表面積が大きく、Tiの反応が速く進行する。これにより、比較的短時間の条件でも、セラミックス基板11と銅板322とを確実に接合することが可能となる。
なお、本実施形態では、Cu板322の下面(接合面)に、Tiペースト324を塗布したが、セラミックス基板11の第一面にTiペースト324を塗布することもできる。この場合、セラミックス基板11側にTiペースト324が配置され、Cu板322側にCu-P-Sn-Niろう材25が配置される。
また、上記実施の形態においては、TiペーストとCu-P-Sn系ろう材とを、セラミックス基板とCu板との間に配置する場合について説明したが、Tiペーストに限定されるものではなく、例えば、Ti粉とCu-P-Sn系ろう材とをセラミックス基板とCu板との間に配置する構成とされても良い。
さらに、上述したパワーモジュール用基板の製造方法において、Tiペースト塗布工程と積層工程の間に、Tiペーストの脱脂を行う工程を設けることもできる。この場合、Tiペーストに含有されている樹脂の残渣量が減り、接合性がより向上する。
また、第三実施形態において、回路層、金属層、及びヒートシンクを同時に接合する場合について説明したが、回路層と金属層をセラミックス基板に接合した後に、金属層とヒートシンクとを接合する構成としても良い。
また、第三実施形態において、セラミックス基板の第二面にAl-Si系ろう材を介して金属層を接合する場合について説明したが、過渡液相接合法(TLP)やAgペーストなどによって接合しても良い。
さらに、第四実施形態において、セラミックス基板11と回路層312との接合界面にCu3P相319が観察されるものを例示して説明したが、Cu3P相319を有さないものであってもよい。
以下に、本発明に係る実施形態の効果を確認すべく行った確認実験(実施例1)の結果について説明する。
表1及び表2記載のセラミックス基板(40mm×40mm)の第一面に、Ti材、表1及び表2に示す厚さを有するCu-P-Sn系ろう材(37mm×37mm)、無酸素銅からなるCu板(37mm×37mm×厚さ0.3mm)を積層した。ここで、本発明例1-1~1-14においては、Ti材としてTiペーストを用いた。このTiペーストは、粒径10μmのTi粉末と、アクリル樹脂と、テキサノールとを含有するペーストとした。また、Tiペーストは、スクリーン印刷法により表1及び表2記載のTi量となるようにセラミックス基板又はCu板に塗布した。TiペーストとCu-P-Sn系ろう材の配置は、表1及び表2に示す配置とした。なお、セラミックス基板の材質がAlNの場合は厚さ0.635mmとし、材質がSi3N4の場合は、0.32mmとした。さらに、本発明例1-15及び1-16では、Ti材として、Tiペーストの代わりに、表2記載のTi量となるように厚さを調整したTi箔を用いた。また、本発明例1-17~1-20では、Ti材として、Tiペーストの代わりに、表2記載のTi量となるように厚さを調整したTi蒸着膜を用いた。
そして、積層されたセラミックス基板、Cu-P-Sn系ろう材、及びCu板を積層方向に圧力15kgf/cm2(1.47MPa)で加圧した状態で真空加熱炉内に装入し、加熱することによって、セラミックス基板の第一面にCu板を接合し、回路層を形成した。ここで、真空加熱炉内の圧力を10-6Pa以上、10-3Pa以下の範囲内に設定し、加熱温度及び加熱時間を、表1及び表2の条件に設定した。このようにして本発明例1-1~1-20のパワーモジュール用基板を得た。
比較例1のパワーモジュール用基板を、Ti材を用いずに、セラミックス基板と回路層とを接合したことを除いて、本発明例の1-1~1-20のパワーモジュール用基板と同様にして得た。
パワーモジュール用基板に対し、セラミックス基板と回路層との界面の接合率について超音波探傷装置(日立パワーソリューションズ社製FineSAT200)を用いて評価し、以下の式から接合率を算出した。
ここで、初期接合面積とは、接合前における接合すべき面積であり、本実施例では回路層の面積(37mm×37mm)とした。超音波探傷像を二値化処理した画像において剥離は接合部内の白色部で示されることから、この白色部の面積を剥離面積とした。
(接合率(%))={(初期接合面積)-(剥離面積)}/(初期接合面積)×100
以上の評価の結果を表1及び表2に示す。
一方、比較例1は、セラミックス基板とCu板との接合の際に、Ti材を介在させずに接合が行われたため、セラミックス基板とCu板(回路層)とを接合することができなかった。
次に、本発明に係る実施形態の効果を確認すべく行った確認実験(実施例2)の結果について説明する。
表3記載のセラミックス基板(40mm×40mm)の第一面及び第二面に、Ti材、表3に示す厚さを有するCu-P-Sn系ろう材(37mm×37mm)、無酸素銅からなるCu板(37mm×37mm×厚さ0.3mm)を積層した。ここで、本発明例2-1~2-14においては、Ti材としてTiペーストを用いた。このTiペーストは、実施例1と同様のTiペーストを用いて、スクリーン印刷法により表3記載のTi量となるようにセラミックス基板又はCu板に塗布した。TiペーストとCu-P-Sn系ろう材の配置は、表3に示す配置とした。なお、セラミックス基板の材質がAlNの場合は厚さ0.635mmとし、材質がSi3N4の場合は、0.32mmとした。また、本発明例2-15では、Ti材として、Tiペーストの代わりに、表3記載のTi量となるように厚さを調整したTi箔を用いた。
そして、積層されたセラミックス基板、Cu-P-Sn系ろう材、及びCu板を、積層方向に圧力15kgf/cm2(1.47MPa)で加圧した状態で真空加熱炉内に装入し、加熱することによってセラミックス基板の第一面及び第二面にCu板を接合し、回路層及び金属層を形成した。ここで、真空加熱炉内の圧力を10-6Pa以上、10-3Pa以下の範囲内に設定し、加熱温度及び加熱時間を表3に示す条件とした。このようにして本発明例2-1~2-15のパワーモジュール用基板を得た。
比較例2のパワーモジュール用基板を、Ti材を用いずに、セラミックス基板と回路層とを接合したことを除いて、本発明例の2-1~2-15のパワーモジュール用基板と同様にして得た。
なお、接合率の評価は、実施例1と同様にして行った。また、冷熱サイクル試験は、下記の通り行った。
以上の評価の結果を表3に示す。
冷熱サイクル試験は、冷熱衝撃試験機エスペック社製TSB-51を使用し、パワーモジュール用基板に対して、液相(フロリナート)で、-40℃にて5分及び150℃にて5分のサイクルを1サイクルとし、これら2000サイクルを実施した。なお、冷熱サイクル試験を2000サイクル行った後もセラミックス基板に割れが発生しなかったパワーモジュール用基板については、表3において「>2000」と記載した。
一方、比較例2は、セラミックス基板とCu板との接合の際に、Ti材を介在させずに接合が行われたため、セラミックス基板とCu板(回路層)とを接合することができなかった。
次に、本発明に係る実施形態の効果を確認すべく行った確認実験(実施例3)の結果について説明する。
表4記載のセラミックス基板(40mm×40mm)の第一面に、Ti材、表4に示す厚さを有するCu-P-Sn系ろう材(37mm×37mm)、無酸素銅からなるCu板(37mm×37mm×厚さ0.3mm)を積層した。また、セラミックス基板の第二面に、Al-Si系ろう材を介して純度99.99mass%のAlからなるAl板(37mm×37mm×厚さ1.6mm)を積層した。ここで、本発明例3-1~3-14においては、Ti材としてTiペーストを用いた。このTiペーストは、実施例1と同様のTiペーストを用いて、スクリーン印刷法により表4記載のTi量となるようにセラミックス基板又はCu板に塗布した。TiペーストとCu-P-Sn系ろう材の配置は、表4に示す配置とした。なお、セラミックス基板の材質がAlNの場合は厚さ0.635mmとし、材質がSi3N4の場合は、0.32mmとした。また、本発明例3-15ではTiペーストの代わりに、表4記載のTi量となるように厚さを調整したTi蒸着膜を用いた。
そして、積層されたセラミックス基板、Tiペースト(又はTi蒸着膜)、Cu-P-Sn系ろう材、Cu板、Al-Si系ろう材、及びAl板を、積層方向に圧力15kgf/cm2(1.47MPa)で加圧した状態で真空加熱炉内に装入し、加熱することによってセラミックス基板の第一面にCu板を接合して回路層を形成し、第二面にAl板を接合して金属層を形成した。ここで、真空加熱炉内の圧力を10-6Pa以上10-3Pa以下の範囲内に設定し、加熱温度及び加熱時間を表4に示す条件とした。このようにして本発明例3-1~3-15のパワーモジュール用基板を得た。
比較例3のパワーモジュール用基板を、Ti材を用いずに、セラミックス基板と回路層とを接合したことを除いて、本発明例3-1~3-15のパワーモジュール用基板と同様にして得た。
なお、接合率の評価、冷熱サイクル試験は、実施例2と同様にして行った。
以上の評価の結果を表4に示す。
一方、比較例3は、セラミックス基板とCu板との接合の際に、Ti材を介在させずに接合が行われたため、セラミックス基板とCu板(回路層)とを接合することができなかった。
次に、本発明に係る実施形態の効果を確認すべく行った確認実験(実施例4)の結果について説明する。
実施例1と同様に、表5記載のセラミックス基板と無酸素銅からなるCu板とを接合し、その接合率を評価した。
実施例4では、Tiペーストとして、表5に示すTiH2粉と、アクリル樹脂(樹脂)と、α-テルピネオール(溶剤)と、アニオン性界面活性剤(分散剤)と、を含有するものとした。なお、有機成分(樹脂+溶剤+分散剤)の質量比を、溶剤:樹脂:分散剤=82.5:15:2.5とした。
ここで、Tiペースト中のTiH2粉の含有量と塗布量とを調整することにより、表5に示すようにTiH2量を制御した。
11 セラミックス基板(セラミックス部材)
12、112、212、312 回路層(Cu部材)
113、213 金属層(Cu部材)
14 Cu-Sn層
17、317 金属間化合物
22、122、123、222、322 Cu板(Cu部材)
Claims (5)
- セラミックスからなるセラミックス部材と、Cu又はCu合金からなるCu部材とがCu-P-Sn系ろう材及びTi材を介して接合された接合体であって、
前記セラミックス部材と前記Cu部材との接合界面には、SnがCu中に固溶したCu-Sn層が形成され、
このCu-Sn層中には、P及びTiを含有する金属間化合物が分散している接合体。 - 請求項1に記載の接合体からなり、
前記セラミックス部材からなるセラミックス基板と、このセラミックス基板の第一面にCu-P-Sn系ろう材及びTi材を介して前記Cu部材からなるCu板が接合されてなる回路層と、を備え、
前記セラミックス基板と前記回路層との接合界面には、SnがCu中に固溶したCu-Sn層が形成され、
このCu-Sn層中には、P及びTiを含有する金属間化合物が分散しているパワーモジュール用基板。 - 前記セラミックス基板の第二面に金属層が形成されている請求項2に記載のパワーモジュール用基板。
- 前記金属層は、
前記セラミックス基板の第二面に、Cu-P-Sn系ろう材及びTi材を介してCu又はCu合金からなるCu板が接合されてなり、
前記セラミックス基板と前記金属層との接合界面には、SnがCu中に固溶したCu-Sn層が形成され、
このCu-Sn層中には、P及びTiを含有する金属間化合物が分散している請求項3に記載のパワーモジュール用基板。 - 前記金属層は、Al又はAl合金からなる請求項3に記載のパワーモジュール用基板。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017228693A (ja) * | 2016-06-23 | 2017-12-28 | 三菱マテリアル株式会社 | 接合体、パワーモジュール用基板、接合体の製造方法、及び、パワーモジュール用基板の製造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106062949B (zh) * | 2014-09-17 | 2018-11-30 | 富士电机株式会社 | 半导体模块 |
WO2017126653A1 (ja) | 2016-01-22 | 2017-07-27 | 三菱マテリアル株式会社 | 接合体、パワーモジュール用基板、パワーモジュール、接合体の製造方法及びパワーモジュール用基板の製造方法 |
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EP3460838B1 (en) * | 2016-05-19 | 2021-02-24 | Mitsubishi Materials Corporation | Substrate for power modules |
US10583302B2 (en) | 2016-09-23 | 2020-03-10 | Greatbatch Ltd. | Gold wetting on ceramic surfaces upon coating with titanium hydride |
JP2018121014A (ja) * | 2017-01-27 | 2018-08-02 | 三菱マテリアル株式会社 | 絶縁回路基板の製造方法 |
JP6897237B2 (ja) * | 2017-03-31 | 2021-06-30 | 三菱マテリアル株式会社 | 接合用成形体及びその製造方法 |
CN111656518B (zh) * | 2018-02-13 | 2023-05-16 | 三菱综合材料株式会社 | 铜-钛-铝接合体、绝缘电路基板、带散热器的绝缘电路基板、功率或led或热电模块 |
WO2020044594A1 (ja) * | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法 |
JP7370222B2 (ja) * | 2019-11-05 | 2023-10-27 | Dowaメタルテック株式会社 | 金属-セラミックス接合基板およびその製造方法 |
WO2022075409A1 (ja) * | 2020-10-07 | 2022-04-14 | 株式会社 東芝 | 接合体、セラミックス回路基板、および半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04295065A (ja) * | 1991-03-22 | 1992-10-20 | Murata Mfg Co Ltd | セラミック−金属接合体の製造方法 |
JPH10102167A (ja) * | 1996-09-25 | 1998-04-21 | Toyota Central Res & Dev Lab Inc | 銅系低融点ろう材 |
JPH10286666A (ja) * | 1997-04-11 | 1998-10-27 | Hitachi Cable Ltd | 熱交換器の製造方法 |
JP2001085571A (ja) * | 1999-09-14 | 2001-03-30 | Ngk Spark Plug Co Ltd | 銅貼り窒化珪素回路基板 |
JP2008221290A (ja) * | 2007-03-14 | 2008-09-25 | Toshiba Corp | 接合体および接合方法 |
JP4375730B2 (ja) | 2004-04-23 | 2009-12-02 | 本田技研工業株式会社 | 銅とセラミックス又は炭素基銅複合材料との接合用ろう材及び同接合方法 |
JP2013098387A (ja) * | 2011-11-01 | 2013-05-20 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、パワーモジュール用基板及びヒートシンク付パワーモジュール用基板 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100995A (ja) | 1981-12-10 | 1983-06-15 | Hitachi Ltd | 低融点ろう材とその使用方法 |
US4460658A (en) * | 1982-09-20 | 1984-07-17 | Allied Corporation | Homogeneous low melting point copper based alloys |
US4729504A (en) | 1985-06-01 | 1988-03-08 | Mizuo Edamura | Method of bonding ceramics and metal, or bonding similar ceramics among themselves; or bonding dissimilar ceramics |
US5378294A (en) * | 1989-11-17 | 1995-01-03 | Outokumpu Oy | Copper alloys to be used as brazing filler metals |
US5561321A (en) * | 1992-07-03 | 1996-10-01 | Noritake Co., Ltd. | Ceramic-metal composite structure and process of producing same |
JPH08222670A (ja) * | 1995-02-15 | 1996-08-30 | Tokuyama Corp | 半導体素子搭載用パッケージ |
EP0743131A1 (en) * | 1995-05-17 | 1996-11-20 | Kabushiki Kaisha Toshiba | Ceramic metal bonding |
JPH0970686A (ja) * | 1995-09-06 | 1997-03-18 | Hitachi Cable Ltd | 銅合金ブレージングシート及びその製造方法 |
EP0874399A1 (en) * | 1996-08-20 | 1998-10-28 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board and semiconductor module |
KR100371974B1 (ko) | 1997-05-26 | 2003-02-17 | 스미토모덴키고교가부시키가이샤 | 구리회로접합기판 및 그 제조방법 |
JP2000164228A (ja) * | 1998-11-25 | 2000-06-16 | Toshiba Corp | 固体高分子電解質型燃料電池のセパレータおよびその製造方法 |
JP4130508B2 (ja) * | 1999-01-22 | 2008-08-06 | 富士通株式会社 | 半田接合方法及び電子装置の製造方法 |
JPWO2003021664A1 (ja) * | 2001-08-31 | 2005-07-07 | 株式会社日立製作所 | 半導体装置、構造体及び電子装置 |
US9533379B2 (en) * | 2002-08-23 | 2017-01-03 | Lincoln Global, Inc. | Phosphorous-copper base brazing alloy |
US6773535B1 (en) * | 2003-03-03 | 2004-08-10 | The United States Of America As Represented By The Secretary Of The Army | Article and method for controlled debonding of elements using shape memory alloy actuators |
JP4394477B2 (ja) * | 2003-03-27 | 2010-01-06 | Dowaホールディングス株式会社 | 金属−セラミックス接合基板の製造方法 |
WO2006016479A1 (ja) | 2004-08-10 | 2006-02-16 | Neomax Materials Co., Ltd. | ヒートシンク部材およびその製造方法 |
TW200704789A (en) * | 2005-06-30 | 2007-02-01 | Nippon Mining Co | Sn-plated copper alloy bar having excellent fatigue characteristics |
US8518554B2 (en) * | 2006-07-04 | 2013-08-27 | Kabushiki Kaisha Toshiba | Ceramic metal composite and semiconductor device using the same |
JP4883684B2 (ja) * | 2006-08-02 | 2012-02-22 | 日本インター株式会社 | 絶縁型大電力用半導体装置の製造方法 |
WO2008041350A1 (en) | 2006-09-29 | 2008-04-10 | Kabushiki Kaisha Toshiba | Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint |
US7666568B2 (en) * | 2007-10-23 | 2010-02-23 | E. I. Du Pont De Nemours And Company | Composition and method for providing a patterned metal layer having high conductivity |
CN101214588B (zh) * | 2008-01-14 | 2010-06-02 | 哈尔滨工业大学 | 低银抗氧化活性无铅钎料 |
JP5504842B2 (ja) | 2009-11-20 | 2014-05-28 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法 |
US20120154974A1 (en) * | 2010-12-16 | 2012-06-21 | Applied Materials, Inc. | High efficiency electrostatic chuck assembly for semiconductor wafer processing |
KR101787390B1 (ko) * | 2010-12-28 | 2017-10-19 | 가부시끼가이샤 도꾸야마 | 메탈라이즈드 기판, 금속 페이스트 조성물, 및 메탈라이즈드 기판의 제조 방법 |
TWI436710B (zh) * | 2011-02-09 | 2014-05-01 | Murata Manufacturing Co | Connection structure |
CN103733329B (zh) | 2011-08-12 | 2016-10-26 | 三菱综合材料株式会社 | 功率模块用基板、自带散热器的功率模块用基板、功率模块以及功率模块用基板的制造方法 |
US20130042912A1 (en) * | 2011-08-12 | 2013-02-21 | Hitachi Chemical Company, Ltd. | Solder bonded body, method of producing solder bonded body, element, photovoltaic cell, method of producing element and method of producing photovoltaic cell |
ES2632605T3 (es) * | 2012-08-10 | 2017-09-14 | Senju Metal Industry Co., Ltd | Aleación de soldadura sin plomo de alta temperatura |
US20150273401A1 (en) * | 2012-11-30 | 2015-10-01 | Empire Technology Development Llc | Selective membrane supported on nanoporous graphene |
JP5672324B2 (ja) * | 2013-03-18 | 2015-02-18 | 三菱マテリアル株式会社 | 接合体の製造方法及びパワーモジュール用基板の製造方法 |
JP6111764B2 (ja) * | 2013-03-18 | 2017-04-12 | 三菱マテリアル株式会社 | パワーモジュール用基板の製造方法 |
-
2014
- 2014-08-18 KR KR1020167004607A patent/KR102131484B1/ko active IP Right Grant
- 2014-08-18 CN CN201480040924.2A patent/CN105393347B/zh active Active
- 2014-08-18 EP EP14841139.0A patent/EP3041045B1/en active Active
- 2014-08-18 JP JP2014165909A patent/JP6287682B2/ja active Active
- 2014-08-18 WO PCT/JP2014/071524 patent/WO2015029811A1/ja active Application Filing
- 2014-08-18 US US14/913,845 patent/US9648737B2/en active Active
- 2014-08-18 TW TW103128294A patent/TWI637466B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04295065A (ja) * | 1991-03-22 | 1992-10-20 | Murata Mfg Co Ltd | セラミック−金属接合体の製造方法 |
JPH10102167A (ja) * | 1996-09-25 | 1998-04-21 | Toyota Central Res & Dev Lab Inc | 銅系低融点ろう材 |
JPH10286666A (ja) * | 1997-04-11 | 1998-10-27 | Hitachi Cable Ltd | 熱交換器の製造方法 |
JP2001085571A (ja) * | 1999-09-14 | 2001-03-30 | Ngk Spark Plug Co Ltd | 銅貼り窒化珪素回路基板 |
JP4375730B2 (ja) | 2004-04-23 | 2009-12-02 | 本田技研工業株式会社 | 銅とセラミックス又は炭素基銅複合材料との接合用ろう材及び同接合方法 |
JP2008221290A (ja) * | 2007-03-14 | 2008-09-25 | Toshiba Corp | 接合体および接合方法 |
JP2013098387A (ja) * | 2011-11-01 | 2013-05-20 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、パワーモジュール用基板及びヒートシンク付パワーモジュール用基板 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3041045A4 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017228693A (ja) * | 2016-06-23 | 2017-12-28 | 三菱マテリアル株式会社 | 接合体、パワーモジュール用基板、接合体の製造方法、及び、パワーモジュール用基板の製造方法 |
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