WO2014205987A1 - Substrat de réseau et procédé de fabrication pour celui-ci, et dispositif d'affichage - Google Patents

Substrat de réseau et procédé de fabrication pour celui-ci, et dispositif d'affichage Download PDF

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Publication number
WO2014205987A1
WO2014205987A1 PCT/CN2013/087419 CN2013087419W WO2014205987A1 WO 2014205987 A1 WO2014205987 A1 WO 2014205987A1 CN 2013087419 W CN2013087419 W CN 2013087419W WO 2014205987 A1 WO2014205987 A1 WO 2014205987A1
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Prior art keywords
tft
transparent electrode
microstructure
layer
forming
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PCT/CN2013/087419
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English (en)
Chinese (zh)
Inventor
阎长江
林雨
蒋晓伟
龙君
谢振宇
Original Assignee
北京京东方光电科技有限公司
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Publication of WO2014205987A1 publication Critical patent/WO2014205987A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate, a method for manufacturing the same, and a display device.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • LCD Thin Film Transistor Liquid Crystal Display
  • the manufacturing process of the TFT-LCD display panel includes: manufacturing an array (Array) substrate and a color filter (Color Filter) substrate, and then aligning the array substrate and the color filter substrate into a cell.
  • a typical TFT array substrate includes a transparent substrate 11 and a TFT gate 120 sequentially on the surface of the transparent substrate 11, a gate insulating layer 13, an active layer 14, and TFTs on both sides of the active layer 14.
  • the electrode 16 and the second deuterated layer 17 and the slit-shaped second transparent electrode 18 are sequentially formed on the surface of the first transparent electrode 16.
  • a via hole is generally disposed on the surface of the first deuterated layer 15, and the via hole may be set as shown in FIG. 1 in consideration of the pixel aperture ratio.
  • the semi-lapped via 30 is shown. A portion of the first transparent electrode 16 on the surface of the half-lapped via 30 overlaps the surface of the drain electrode 121 of the TFT, and the other portion overlaps the surface of the gate insulating layer 13 at the bottom of the via hole 30.
  • the hole can increase the pixel aperture ratio.
  • Embodiments of the present invention provide an array substrate, a method of manufacturing the same, and a display device for avoiding light leakage of a display panel, thereby improving the quality of the display panel and improving the display effect.
  • An aspect of an embodiment of the present invention provides an array substrate, including: a transparent substrate, a TFT on the transparent substrate, and a first layer covering the TFT a first transparent electrode on the surface of the first deuterated layer and connected to the drain of the TFT through a via hole, wherein the array substrate has a lightproofing layer at the via hole Transmissive photoresist structure.
  • a display device including the array substrate as described above includes: forming a pattern of a first deuterated layer on a surface of a substrate on which a TFT is formed; passing through a surface of a substrate on which a pattern of a first deuterated layer is formed The patterning process forms a pattern of vias for connecting the first transparent electrode to be formed on the surface of the first deuterated layer and the drain of the TFT; and forming at the via position A photoresist structure that prevents light from transmitting.
  • the embodiment of the present invention provides an array substrate, a manufacturing method thereof, and a display device.
  • the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer.
  • a first transparent electrode connected to the drain of the TFT through the via, the via having a photoresist structure for preventing transmission of light.
  • the photoresist structure can block the light from being irradiated to the via portion not covered by the drain of the TFT, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • FIG. 2 is a schematic structural view of an array substrate according to a first embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of an array substrate according to a second embodiment of the present invention
  • FIG. 4 is an array according to a third embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an array substrate according to a fourth embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of an array substrate according to a fifth embodiment of the present invention; A flow chart of a method of fabricating an array substrate;
  • FIG. 8 is a flow chart showing a method of fabricating an array substrate according to a seventh embodiment of the present invention.
  • FIG. 9 is a flow chart of a method for fabricating an array substrate according to an eighth embodiment of the present invention.
  • FIG. 10 is a flow chart of a method for fabricating an array substrate according to a ninth embodiment of the present invention.
  • An array substrate according to the first embodiment of the present invention may include: a transparent substrate 11, a TFT 12 on the transparent substrate 11, a first deuterated layer 15 covering the TFT 12, and a first The surface of the deuterated layer 15 and the first transparent electrode 16 connected to the drain electrode 121 of the TFT through the via hole 20, wherein the via hole 20 has a photoresist structure 21 for preventing light from transmitting.
  • a photoresist structure for preventing light transmission at a position of a via hole by forming a photoresist structure for preventing light transmission at a position of a via hole, light leakage caused by the through hole not being completely covered in the prior art can be effectively avoided. . In this way, the quality of the display panel is significantly improved, and the display effect of the display device is improved.
  • the photoresist structure 21 may specifically be a microstructure having a plurality of continuous slopes or curved surfaces. It should be noted that the above-mentioned microstructure having a plurality of continuous slopes or curved surfaces has
  • the present invention is not limited thereto. 1 , , , , , '', ,
  • the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure. .
  • the surface of the first deuterated layer 15 located at the via 20 has a zigzag irregular shape formed by a patterning process.
  • the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed.
  • the first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from being transmitted, thereby avoiding the light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure.
  • the surface of the drain electrode 121 of the TFT located at the via hole 20 has a zigzag irregular shape formed by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface.
  • the photoresist structure 21 can prevent the light from transmitting, and avoid leakage of the display panel. Light phenomenon, which improves the quality of the display panel and enhances the display effect.
  • the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, the surface of the gate insulating layer 13.
  • a first transparent electrode 16 having the microstructure is formed. Specifically, the surface of the gate insulating layer 13 located at the via hole 20 has a zigzag irregular shape formed by a patterning process.
  • the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the array substrate according to an embodiment of the present invention further includes a second deuterated layer 17 formed on the surface of the first transparent electrode 16 and a second transparent electrode 18 formed on the surface of the second deuterated layer 17.
  • the first transparent electrode 16 may be a plate-like structure
  • the second transparent electrode 18 may be a slit-like structure spaced apart from each other; or, the first transparent electrode 16 may be a slit-like structure spaced apart from each other, and the second transparent electrode 18 may be a plate-like structure; or both the first transparent electrode 16 and the second transparent electrode 18 may be slit-like structures.
  • the array substrate provided by the embodiment of the present invention can be applied to FFS (Fringe Field Switching) type or AD-SDS (Advanced-Super Dimensional Switching) type.
  • Liquid crystal display device For example, an electrode of a slit-like structure in which the first transparent electrode 16 and the second transparent electrode 18 are spaced apart is generally used as an ADS type liquid crystal display device, and the ADS technology passes through the same in-plane pixel.
  • the parallel electric field generated by the edge of the electrode and the longitudinal electric field generated between the pixel electrode layer and the common electrode layer form a multi-dimensional electric field, so that all the aligned liquid crystal molecules between the pixel electrodes in the liquid crystal cell and directly above the electrode can be rotated and converted, and other types of display.
  • the ADS type liquid crystal display device further improves the working efficiency of the planar orientation liquid crystal and increases the light transmission efficiency.
  • the first transparent electrode 16 may be a pixel electrode, and the second transparent electrode 18 may be a common electrode; or the first transparent electrode 16 may be a common electrode, and the second transparent electrode 18 may be Pixel electrode.
  • the invention is not limited thereto.
  • the patterning process may include only a photolithography process, or may include a photolithography process and an etching process, and may also include other processes for forming a predetermined pattern, such as printing, inkjet, etc.;
  • the engraving process refers to a process of forming a pattern using a photoresist, a mask, an exposure machine, or the like including a process of film formation, exposure, development, and the like.
  • the corresponding patterning process can be selected in accordance with the particular structure formed in the present invention.
  • the substrate formed with the via holes 20 may be subjected to ion bombardment etching, followed by ashing photoresist and ion bombardment etching, and a photoresist having a zigzag irregular shape on the surface of the via hole 20 may be obtained.
  • the structure 21 may be roughened to form a photoresist structure 21 having a zigzag irregularly shaped microstructure.
  • the photoresist structure 21 is specifically a light reflecting structure formed by the first deuterated layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is located at the via hole 20 by changing
  • the shape can realize the design of the photoresist structure, so that no additional layer is required, and the thickness of the display device is effectively ensured.
  • the photoresist structure 21 includes a light shielding layer 22.
  • the light shielding layer 22 is located between the first transparent electrode 16 and the second vaporization layer 17.
  • the photoresist structure 21 having the irregular shape with a zigzag surface at the via hole 20 is located between the first transparent electrode 16 and the first vaporization layer 17.
  • the light shielding layer 22 can better prevent the light from passing through the via hole, thereby more effectively avoiding the light leakage phenomenon of the display panel and improving the display effect of the display device.
  • FIG. 6 only the photoresist structure 21 having the zigzag irregular shape microstructure and the light shielding layer at the via hole 20 is illustrated by using FIG. 6 as an example, and the via hole 20 has a zigzag shape at the same time.
  • Embodiments of the present invention provide a display device including any of the array substrates described above.
  • the display device may specifically be a liquid crystal display, a liquid crystal television, a digital photo frame, Any liquid crystal display product or component with display function, such as mobile phones and tablets.
  • An embodiment of the present invention provides a display device.
  • the display device includes an array substrate, and the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, and a surface on the first deuterated layer.
  • the photoresist structure can prevent light from transmitting into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the present invention further provides a method for fabricating an array substrate. As shown in FIG. 7 and in conjunction with FIG. 2, a method for fabricating an array substrate according to a sixth embodiment of the present invention includes the steps of:
  • the embodiment of the present invention provides a method for fabricating an array substrate.
  • the array substrate includes: a transparent substrate, a TFT on the transparent substrate, a first deuterated layer covering the TFT, a surface on the first deuterated layer, and a via hole and A first transparent electrode to which the drain of the TFT is connected, the via having a photoresist structure for preventing transmission of light.
  • the photoresist structure can prevent light from being transmitted into the via portion not covered by the drain of the TFT, thereby avoiding light leakage of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • a method for fabricating an array substrate according to a seventh embodiment of the present invention includes:
  • the incident light is scattered through the photoresist structure 21 having the microstructure on the surface, thereby reducing the transmission of the incident light.
  • the light at the via 20 avoids the light leakage of the display device and improves the display effect of the display device.
  • the first deuterated layer 15 at the via 20 has the microstructure, and the surface of the first deuterated layer 15 forms the first transparent electrode 16 having the microstructure.
  • the surface of the first deuterated layer 15 located at the via 20 is formed into a saw-toothed irregular shape by a patterning process. For example, using a mask exposure process, the surface of the first deuterated layer 15 at the via 20 is etched to control the etching depth, a portion of the first deuterated layer is retained, and then fabricated on the substrate on which the above structure is formed.
  • the first transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the drain 121 of the TFT located at the via 20 has the microstructure, and the surface of the drain 121 of the TFT forms the first transparent electrode 16 having the microstructure.
  • the surface of the drain 121 of the TFT located at the via 20 is formed in a zigzag irregular shape by a patterning process. For example, by using a mask exposure process, the surface of the drain 121 of the TFT at the via 20 is etched, the etching depth is controlled, a portion of the drain 121 of the TFT is retained, and then the first substrate is formed on the substrate having the above structure.
  • the transparent electrode 16 is formed with a photoresist structure 21 having a zigzag-shaped irregular shape on its surface. In this way, the photoresist structure 21 can prevent the light from transmitting, avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • the gate insulating layer 13 between the first deuterated layer 15 and the transparent substrate 11 at the via 20 has the microstructure, and the surface of the gate insulating layer 13 is formed with the microstructure.
  • the first transparent electrode 16 Specifically, the surface of the gate insulating layer 13 located at the via hole 20 is formed into a zigzag irregular shape by a patterning process. For example, using mask In the film exposure process, the surface of the gate insulating layer 13 at the via 20 is etched to control the etching depth, a portion of the gate insulating layer 13 is left, and then the first transparent electrode 16 is formed on the substrate on which the above structure is formed. Forming a photoresist structure having a serrated irregular shape on the surface
  • the photoresist structure 21 can prevent the light from transmitting, thereby avoiding the light leakage phenomenon of the display panel, thereby improving the quality of the display panel and improving the display effect.
  • FIG. 2 is only a description of the fabrication method of the photoresist structure in the array substrate according to the present invention by taking FIG. 2, FIG. 3, FIG. 4 as an example, and other photoresists for preventing light transmission at the position of the via hole 20 are formed.
  • the method of fabricating the structure 21 is not repeated here, but should be within the scope of protection of the present invention.
  • the photoresist structure 21 may include a light shielding layer 22 formed on a substrate on which the first transparent electrode 16 is formed.
  • the via hole 20 is formed with both a microstructure having an irregular surface and a light shielding layer between the first transparent electrode 16 and the second vaporization layer 17.
  • the photoresist structure having the zigzag microstructure and the light shielding layer at the via 20 as an example, and the other has a jagged microstructure at the via 20 and The photoresist structure of the light-shielding layer is not repeated here, but should be within the scope of protection of the embodiments of the present invention.
  • a method for fabricating an array substrate according to an eighth embodiment of the present invention includes:
  • the semiconductor active layer is a metal oxide (IGZO);
  • first transparent electrode 16 Form a first transparent electrode 16 on a surface of the substrate on which the above pattern is formed, so that a photoresist structure 21 for preventing light transmission is formed at a position of the via hole 20, and the first transparent electrode 16 passes through the via hole 20 and the TFT.
  • the drain electrodes 121 are connected;
  • a second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed.
  • the photoresist structure 21 is specifically a light reflection structure formed by the first deuteration layer 15 and the first transparent electrode 16, so that the existing hierarchical structure is changed.
  • the shape of the via structure can be realized by the shape of the via hole 20, so that no additional layer is required, and the thickness of the display device is effectively ensured.
  • a method of fabricating an array substrate according to a ninth embodiment of the present invention includes:
  • the semiconductor active layer is a metal oxide (IGZO);
  • a second transparent electrode 18 is formed on the surface of the substrate on which the second deuterated layer 17 is formed.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention porte sur un substrat de réseau et un procédé de fabrication pour celui-ci, et sur un dispositif d'affichage, qui concernent le domaine technique des dispositifs d'affichage, afin d'empêcher le phénomène de fuite de lumière d'un panneau d'affichage, améliorant ainsi la qualité d'affichage du panneau d'affichage et améliorant l'effet d'affichage. Le substrat de réseau comprend un substrat transparent (11), un TFT (12) qui est situé sur le substrat transparent (11), une première couche de passivation (15) qui recouvre le TFT (12), et une première électrode transparente (16) qui est située sur la surface de la première couche de passivation (15) et est connectée à l'électrode de drain (121) du TFT (12) par un trou d'interconnexion (20), une structure de résistance à la lumière (21) utilisée pour empêcher l'émission de rayons lumineux étant disposée dans l'emplacement du trou d'interconnexion (20).
PCT/CN2013/087419 2013-06-28 2013-11-19 Substrat de réseau et procédé de fabrication pour celui-ci, et dispositif d'affichage WO2014205987A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310269322.1 2013-06-28
CN201310269322.1A CN103346159B (zh) 2013-06-28 2013-06-28 一种阵列基板及其制造方法、显示装置

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WO2014205987A1 true WO2014205987A1 (fr) 2014-12-31

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