WO2014167615A1 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- WO2014167615A1 WO2014167615A1 PCT/JP2013/007530 JP2013007530W WO2014167615A1 WO 2014167615 A1 WO2014167615 A1 WO 2014167615A1 JP 2013007530 W JP2013007530 W JP 2013007530W WO 2014167615 A1 WO2014167615 A1 WO 2014167615A1
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- WIPO (PCT)
- Prior art keywords
- shield
- shutter
- target
- sputtering apparatus
- convex portion
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Definitions
- the present invention relates to a sputtering apparatus.
- Patent Document 1 discloses a substrate holder that holds a substrate, a sputtering cathode that mounts a target, a shutter plate that is movably disposed between the target and the substrate, a vacuum container that accommodates the shutter plate, Describes a sputtering apparatus having a gas inlet for supplying a gas such as argon gas.
- An object of the present invention is to provide a sputtering apparatus having a configuration advantageous for ignition.
- One aspect of the present invention relates to a sputtering apparatus having a chamber, a substrate holder for holding a substrate in the chamber, and a target holder for holding a target.
- the sputtering apparatus includes the substrate holder.
- a shutter having a first surface on the substrate holder side and a second surface opposite to the first surface, and a portion facing the second surface of the shutter.
- a first shield having a third surface and a fourth surface opposite to the third surface; a second shield having a fifth surface including a portion facing the end portion of the shutter and the end portion of the first shield;
- a guide disposed outside the first shield so as to communicate with a first gap formed between the second surface of the shutter and the third surface of the first shield.
- a gas supply unit configured to supply a gas to the diffusion space
- the second shield includes a protrusion protruding from the fifth surface so as to form a second gap with the end of the shutter, The gas supplied to the gas diffusion space by the gas supply unit is movable toward the space near the target through the first gap.
- a sputtering apparatus having a configuration advantageous for ignition is provided.
- the figure which expanded a part of sectional drawing of the sputtering device shown in FIG. The figure which expanded a part of sectional drawing of the sputtering device shown in FIG.
- the figure which shows the modification of the sputtering device shown in FIG. The figure which shows the modification of the sputtering device shown in FIG.
- the figure which shows the modification of the sputtering device shown in FIG. The figure which shows the modification of the sputtering device shown in FIG.
- FIG. 1 shows a schematic configuration of a sputtering apparatus 100 according to one embodiment of the present invention.
- the sputtering apparatus 100 includes a chamber 101, a substrate holder 103 for holding the substrate S in the chamber 101, and one or more target holders 120 for holding one or more targets 110.
- the chamber 101 includes, for example, an upper chamber 101a and a lower chamber 101b, and can be divided into an upper chamber 101a and a lower chamber 101b.
- the upper chamber 101a and the lower chamber 101b can be coupled by a hinge (not shown).
- the chamber 101 can be divided into an upper chamber 101a and a lower chamber 101b.
- a seal member 131 such as an O-ring may be disposed between the upper chamber 101a and the lower chamber 101b. Power is supplied to the target 110 from a power supply device (not shown) through the target holder 120.
- the sputtering apparatus 100 can include a shutter unit 104, a first shield 105, a second shield 109, a gas supply unit 22, and an exhaust device 102.
- the shutter unit 104 can include one or more shutters.
- the shutter unit 104 includes a first shutter 104a and a second shutter 104b.
- the first shutter 104a and the second shutter 104b are independently rotated by the rotation mechanism 118.
- Each of the first shutter 104a and the second shutter 104b has at least one opening.
- the first shutter 104a and the second shutter 104b are configured such that the target 110 used for sputtering is the opening of the first shutter 104a and the second shutter 104b with respect to the inner space 34 (the space where the substrate S faces) of the chamber 101. It is driven by the rotation mechanism 118 so as to face through the opening.
- the first shutter 104a is disposed between the substrate holder 103 and the target holder 120, and has a first surface S1 on the substrate holder 103 side and a second surface S2 on the opposite side of the first surface S1.
- the second shutter 104b has a surface facing the first surface S1.
- the first shield 105 has a third surface S3 including a portion facing the second surface S2 of the first shutter 104a and a fourth surface S4 opposite to the third surface S3.
- the first shield 105 can also include a portion 15 disposed to surround the periphery of the target 110.
- the portion 15 can be, for example, a cylindrical portion that surrounds the space 31 in the vicinity of the target 110 in addition to the target 110.
- the second shield 109 has a fifth surface S5 including portions 109a and 109b facing the end portion 11 of the first shutter 104a and the end portion 12 of the first shield 105.
- the second shield 109 may have a ring shape.
- a first gap G1 is formed between the second surface S2 of the first shutter 104a and the third surface S3 of the first shield 105.
- a gas diffusion space 21 is disposed outside the first shield 105 so as to communicate with the first gap G1.
- the gas diffusion space 21 can be, for example, an annular space.
- the gas supply unit 22 supplies gas to the gas diffusion space 21.
- the gas diffusion space 21 may be at least partially defined by the fourth surface S4 of the first shield 105 and the fifth surface S5 of the second shield 109.
- the second shield 109 includes a protruding portion 112.
- the protruding portion 112 protrudes from the fifth surface S5 so as to form the second gap G2 between the end portion 11 of the first shutter 104a and the protruding portion 112.
- sputtering particles from the inner space 34 between the target 110 and the substrate S and / or the space 31 near the target 110 pass between the end 11 of the first shutter 104 a and the second shield 109.
- a gas for example, Ar, Kr or Xe gas, supplied to the gas diffusion space 21 by the gas supply unit 22 can move toward the space 31 in the vicinity of the target 110 through the first gap G1.
- the sputtering apparatus 100 can include a third shield 117 arranged so as to surround the inner space 34 between the shutter unit 104 and the substrate holder 103.
- the third shield 117 is disposed so that the outer space 35 is formed between the third shield 117 and the chamber 101.
- the second shield 109 can be disposed so as to separate the gas diffusion space 21 and the outer space 35.
- the gas flowing from the gas diffusion space 21 through the first gap G1 into the space 31 in the vicinity of the target 110 passes through the inner space 34 surrounded by the third shield 117 between the shutter unit 104 and the substrate holder 103.
- the air can be sucked by the exhaust device 102 through an exhaust port that can be provided at a position lower than the substrate holding surface of the substrate holder 103.
- a pressure distribution can be formed in the chamber 101 such that the pressure in the space 31 near the target 110 is higher than that in the inner space 34.
- the ignition for generating the plasma is preferably performed by controlling the shutter unit 104 so that the target 110 used for sputtering does not face the inner space 34. That is, the ignition for generating the plasma is performed by the shutter unit 104 (the first shutter 104a and / or the second shutter) between the space 31 near the target 110 used for sputtering and the inner space 34 on the substrate S side. 104b) is preferably done in a separated state. Such a state is effective for making the pressure in the space 31 near the target 110 sufficiently higher than the pressure in the inner space 34 on the substrate S side.
- the second gap G2 is preferably smaller than the minimum distance between the first shield 105 and the second shield 109. This reduces the conductance of the path from the gas diffusion space 21 to the inner space 34 via the second gap G2, and supplies gas from the gas diffusion space 21 to the space 31 near the target 110 via the first gap G1. It contributes to making it easier to do.
- the second shield 109 further includes an outer convex portion 111 on the fifth surface S5.
- the outer convex portion 111 is arranged such that the end portion 12 of the first shield 105 faces the portion 109a between the protruding portion 112 and the outer convex portion 111 in the fifth surface S5.
- the outer convex portion 111 prevents the sputtered particles and the gas diffusion space 21 from entering the inner space 34 between the target 110 and the substrate S and / or the space 31 in the vicinity of the target 110.
- a third gap G ⁇ b> 3 is configured by the outer convex portion 111 and the end portion 12 of the first shield 105.
- the third gap G ⁇ b> 3 is preferably smaller than the minimum distance between the first shield 105 and the portion 109 a between the protruding portion 112 and the outer convex portion 111 of the second shield 109. This contributes to making the pressure of the gas diffusion space 21 constant and providing the same pressure to the space 31 in the vicinity of any of the plurality of targets 110. This is advantageous for reducing variations in pressure state among the plurality of targets 110.
- the second shield 109 further includes an inner convex portion 113 on the fifth surface S5.
- the end portion 11 of the first shutter 104a (and the end portion 13 of the second shutter 104b) faces the portion 109b between the protruding portion 112 and the inner convex portion 113 in the fifth surface S5.
- the inner convex portion 113 prevents the sputtered particles and the gas diffusion space 21 from entering the inner space 34 between the target 110 and the substrate S and / or the space 31 in the vicinity of the target 110.
- the protrusion 112, the outer protrusion 111, the inner protrusion 113, the first shutter 104a, the second shutter 104b, and the first shield 105 meander the path directly from the gas diffusion space 21 to the spaces 31, 34, thereby , Increasing the conductance of the path and preventing the sputtering particles from entering the gas diffusion space 21.
- the second shield 109 may include a protrusion 114 that protrudes toward the space between the end 11 of the first shutter 104 a and the end 13 of the second shutter 104 b. Good.
- the addition of the protrusion 114 is advantageous in order to increase the conductance of the path from the gas diffusion space 21 directly to the spaces 31 and 34.
- the addition of the protrusion 114 is also advantageous in improving the effect of preventing the sputtered particles from entering the gas diffusion space 21.
- an additional shield 130 may be provided between the shutter unit 104 and the inner space 34.
- An additional shield 130 can be coupled to the second shield 109.
- the additional shield 130 increases the conductance of the path from the gas diffusion space 21 to the spaces 31 and 34 without passing through the first gap G1.
- the shutters exemplified as the first shutter 104a and the second shutter 104b may be curved as exemplified in FIGS. 1 to 5 or may have a planar shape as exemplified in FIG. Good.
- the structure of the second shield 109 can be changed according to the shape of the shutter.
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Abstract
Description
Claims (9)
- チャンバと、前記チャンバの中で基板を保持するための基板ホルダと、ターゲットを保持するためのターゲットホルダとを有するスパッタリング装置であって、
前記基板ホルダと前記ターゲットホルダとの間に配置され、前記基板ホルダの側の第1面および前記第1面の反対側の第2面を有するシャッターと、
前記シャッターの前記第2面に対向する部分を含む第3面および前記第3面の反対側の第4面を有する第1シールドと、
前記シャッターの端部および前記第1シールドの端部に対向する部分を含む第5面を有する第2シールドと、
前記シャッターの前記第2面と前記第1シールドの前記第3面との間に形成される第1間隙に連通するように前記第1シールドの外側に配置されたガス拡散空間にガスを供給するガス供給部と、を備え、
前記第2シールドは、前記シャッターの端部との間に第2間隙を構成するように前記第5面から突出した突出部を含み、
前記ガス供給部によって前記ガス拡散空間に供給されたガスは、前記第1間隙を通って前記ターゲットの近傍の空間に向かって移動可能である、
ことを特徴とするスパッタリング装置。 - 前記第2間隙は、前記第1シールドと前記第2シールドとの間の最小距離よりも小さい、
ことを特徴とする請求項1に記載のスパッタリング装置。 - 前記第2シールドは、前記第5面に外側凸部を更に含み、前記外側凸部は、前記第1シールドの端部が、前記第5面のうち前記突出部と前記外側凸部との間の部分に対向するように配置されている、
ことを特徴とする請求項1又は2に記載のスパッタリング装置。 - 前記外側凸部と前記第1シールドの端部とで第3間隙が構成され、
前記第3間隙は、前記第2シールドのうち前記突出部と前記外側凸部との間の部分と前記第1シールドとの間の最小距離よりも小さい、
ことを特徴とする請求項3に記載のスパッタリング装置。 - 前記第2シールドは、前記第5面に内側凸部を更に含み、前記内側凸部は、前記シャッターの端部が、前記第5面のうち前記突出部と前記内側凸部との間の部分に対向するように配置されている、
ことを特徴とする請求項1乃至4のいずれか1項に記載のスパッタリング装置。 - 前記シャッターの前記第1面に対向する面を有する第2シャッターを更に備え、前記内側凸部は、前記第2シャッターの端部が、前記第5面のうち前記突出部と前記内側凸部との間の部分に対向するように配置されている、
ことを特徴とする請求項5に記載のスパッタリング装置。 - 前記ガス拡散空間は、前記第1シールドの前記第4面および前記第2シールドの前記第5面によって少なくとも一部が画定される、
ことを特徴とする請求項1乃至6のいずれか1項に記載のスパッタリング装置。 - 前記第1シールドは、前記ターゲットの周囲を取り囲むように配置された部分を含む、
ことを特徴とする請求項1乃至7のいずれか1項に記載のスパッタリング装置。 - 前記ターゲットホルダの他に、少なくとも1つのターゲットホルダを更に有する、
ことを特徴とする請求項1乃至8のいずれか1項に記載のスパッタリング装置。
Priority Applications (3)
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KR1020157031183A KR101683414B1 (ko) | 2013-04-10 | 2013-12-24 | 스퍼터링 장치 |
JP2015510962A JP5970607B2 (ja) | 2013-04-10 | 2013-12-24 | スパッタリング装置 |
US14/878,567 US9966241B2 (en) | 2013-04-10 | 2015-10-08 | Sputtering apparatus |
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JP2013082484 | 2013-04-10 | ||
JP2013-082484 | 2013-04-10 |
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US14/878,567 Continuation US9966241B2 (en) | 2013-04-10 | 2015-10-08 | Sputtering apparatus |
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US (1) | US9966241B2 (ja) |
JP (2) | JP5970607B2 (ja) |
KR (1) | KR101683414B1 (ja) |
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JP2021533269A (ja) * | 2018-08-10 | 2021-12-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | マルチカソード堆積システム |
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SG11202000479WA (en) | 2017-07-19 | 2020-02-27 | Intevac Inc | System for forming nano-laminate optical coating |
KR102133279B1 (ko) * | 2018-06-20 | 2020-07-13 | 주식회사 엘지화학 | 회절 격자 도광판용 몰드의 제조방법 및 회절 격자 도광판의 제조방법 |
US11414748B2 (en) * | 2019-09-25 | 2022-08-16 | Intevac, Inc. | System with dual-motion substrate carriers |
US11694913B2 (en) | 2018-12-18 | 2023-07-04 | Intevac, Inc. | Hybrid system architecture for thin film deposition |
JP7134112B2 (ja) * | 2019-02-08 | 2022-09-09 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US11211230B2 (en) * | 2019-04-22 | 2021-12-28 | Applied Materials, Inc. | Gas flow system |
JP2022101218A (ja) * | 2020-12-24 | 2022-07-06 | 東京エレクトロン株式会社 | スパッタ装置及びスパッタ装置の制御方法 |
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JP4137277B2 (ja) | 1999-04-15 | 2008-08-20 | 株式会社アルバック | スパッタリング装置 |
JP4902052B2 (ja) * | 2001-04-05 | 2012-03-21 | キヤノンアネルバ株式会社 | スパッタリング装置 |
JP2005187830A (ja) | 2003-12-24 | 2005-07-14 | Cyg Gijutsu Kenkyusho Kk | スパッタ装置 |
JP5291907B2 (ja) | 2007-08-31 | 2013-09-18 | 株式会社アルバック | スパッタリング装置 |
KR101067104B1 (ko) | 2008-11-28 | 2011-09-22 | 캐논 아네르바 가부시키가이샤 | 성막 장치, 전자 디바이스의 제조 방법 |
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WO2011117945A1 (ja) * | 2010-03-26 | 2011-09-29 | キヤノンアネルバ株式会社 | スパッタリング装置及び電子デバイスの製造方法 |
JPWO2012033198A1 (ja) * | 2010-09-10 | 2014-01-20 | 株式会社アルバック | スパッタ装置 |
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2013
- 2013-12-24 KR KR1020157031183A patent/KR101683414B1/ko active IP Right Grant
- 2013-12-24 WO PCT/JP2013/007530 patent/WO2014167615A1/ja active Application Filing
- 2013-12-24 JP JP2015510962A patent/JP5970607B2/ja active Active
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2014
- 2014-04-09 TW TW103113003A patent/TWI516626B/zh active
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2015
- 2015-10-08 US US14/878,567 patent/US9966241B2/en active Active
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Cited By (2)
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JP2021533269A (ja) * | 2018-08-10 | 2021-12-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | マルチカソード堆積システム |
JP7253614B2 (ja) | 2018-08-10 | 2023-04-06 | アプライド マテリアルズ インコーポレイテッド | マルチカソード堆積システム |
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US20160027623A1 (en) | 2016-01-28 |
JP6154943B2 (ja) | 2017-06-28 |
JP2017036494A (ja) | 2017-02-16 |
JP5970607B2 (ja) | 2016-08-17 |
TW201510255A (zh) | 2015-03-16 |
US9966241B2 (en) | 2018-05-08 |
KR20150137103A (ko) | 2015-12-08 |
TWI516626B (zh) | 2016-01-11 |
KR101683414B1 (ko) | 2016-12-06 |
JPWO2014167615A1 (ja) | 2017-02-16 |
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