WO2014141514A1 - フリップチップボンダおよびフリップチップボンディング方法 - Google Patents
フリップチップボンダおよびフリップチップボンディング方法 Download PDFInfo
- Publication number
- WO2014141514A1 WO2014141514A1 PCT/JP2013/075478 JP2013075478W WO2014141514A1 WO 2014141514 A1 WO2014141514 A1 WO 2014141514A1 JP 2013075478 W JP2013075478 W JP 2013075478W WO 2014141514 A1 WO2014141514 A1 WO 2014141514A1
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- Prior art keywords
- flip chip
- semiconductor chip
- cooling
- chip bonder
- bonding tool
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- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 191
- 238000001816 cooling Methods 0.000 claims abstract description 158
- 230000007246 mechanism Effects 0.000 claims description 56
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 description 43
- 229920005989 resin Polymers 0.000 description 43
- 238000001179 sorption measurement Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 14
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000002542 deteriorative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
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- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/37—Effects of the manufacturing process
- H01L2924/3701—Effects of the manufacturing process increased through put
Definitions
- the present invention relates to a structure of a flip chip bonder and a flip chip bonding method using the flip chip bonder.
- flip chip bonding in which protruding electrodes called bumps are formed on the semiconductor chip and the semiconductor chip is directly connected to the circuit board has been widely adopted.
- a plurality of bumps projection electrodes
- the bumps are bonded to a plurality of electrodes formed on the circuit board by heating and melting.
- a semiconductor chip and a circuit board are bonded to each other, and has advantages such as a reduction in mounting area, good electrical characteristics, and no need for mold sealing, as compared with a conventional wire bonding connection method.
- an insulating resin film is attached to the surface of a semiconductor chip in advance, and the semiconductor chip is adsorbed and picked up by a holding member together with the insulating resin film (NCF), and then the holding member is rotated to rotate the insulating resin.
- the semiconductor chip is inverted so that the surface of the film (NCF) is on the lower side, and a bonding tool is brought into contact with the surface of the semiconductor chip opposite to the surface on which the insulating resin film (NCF) is attached.
- the semiconductor chip is transferred from the holding member to the bonding tool by being adsorbed by the bonding tool.
- the surface on which the insulating resin film (NCF) of the semiconductor chip is attached is in contact with the upper surface of the holding member and is delivered to the bonding tool.
- the surface of the insulating resin film (NCF) is on the lower side (circuit board side).
- the bonding tool When the bonding is completed, the bonding tool is at a high temperature of about 300 ° C.
- the surface of the semiconductor chip is brought into contact with the semiconductor chip when the high-temperature bonding tool is brought into contact with the semiconductor chip.
- the insulating resin film (NCF) affixed to (the holding member side surface) is heated and melted and adheres to the holding member surface. For this reason, after the bonding tool in a high temperature state is once cooled to a temperature lower than the melting temperature of the insulating resin film (NCF) (for example, about 50 ° C.), the next semiconductor chip is received from the holding member, and the temperature of the bonding tool is increased again. After that, it is necessary to perform bonding.
- the bonding tool is often cooled using air at room temperature (about 25 to 30 ° C), and it takes time to cool the bonding tool at a high temperature of about 300 ° C to about 50 ° C. There was a problem that the bonding time was long.
- an object of the present invention is to provide a flip chip bonder that can shorten the bonding time without deteriorating the bonding quality.
- the flip chip bonder of the present invention has a reversing mechanism for reversing the semiconductor chip, a bonding tool for receiving the semiconductor chip reversed by the reversing mechanism from the reversing mechanism and bonding it to the substrate, and a cooling mechanism for cooling the reversing mechanism. It is characterized by that.
- the reversing mechanism includes a holding member that holds the inverted semiconductor chip, and the cooling mechanism cools the temperature of the holding member to a predetermined temperature before the bonding tool receives the semiconductor chip. This is also preferable.
- the heat capacity of the holding member is larger than the heat capacity of the bonding tool.
- the holding member is preferably an adsorption reversal collet that is transferred to the bonding tool in a state where the semiconductor chip is sucked and reversed, and the holding member reverses the semiconductor chip. It is also preferable that the transfer stage be transferred to the bonding tool in a state in which the semiconductor chip is reversed and the semiconductor chip is inverted.
- the cooling mechanism is also suitable for cooling the inner surface or outer surface of the holding member.
- the cooling mechanism includes a base member, a ground plate having a ground surface on which the surface of the holding member is grounded, and a cooling member including a heat radiating member attached to the ground plate, It is also preferable that the cooling member is supported by the base portion by a support mechanism that can change the direction of the ground contact surface so as to follow the direction of the surface of the holding member.
- the heat capacity of the cooling member is preferably larger than the heat capacity of the holding member, and the heat dissipation member is attached to the surface of the ground plate opposite to the ground surface. It is also preferable that the heat radiating member is a heat radiating fin and includes a cooling fan for cooling the heat radiating fin.
- the support mechanism is rotatable about two axes, a first axis along the ground plane and a second axis along the ground plane and perpendicular to the first axis. It is also preferable to support the grounding plate on the base body so that it has a cooling nozzle that blows cooling air to a holding member that is provided on the base body and whose surface is grounded to the grounding surface.
- the ground plane of the ground plate is also suitable for heat conduction from the holding member toward the ground plate when the surface of the holding member is grounded.
- the flip chip bonding method of the present invention includes a reversing mechanism for reversing a semiconductor chip, a bonding tool for receiving the semiconductor chip reversed by the reversing mechanism from the reversing mechanism and bonding it to a substrate, and a cooling mechanism for cooling the reversing mechanism. And a cooling step of cooling the holding member to a predetermined temperature before the bonding tool receives the semiconductor chip by the cooling mechanism.
- the present invention has the effect of providing a flip chip bonder that can shorten the bonding time without deteriorating the bonding quality.
- FIG. 2 is a cross-sectional view of a suction inversion collet of the flip chip bonder shown in FIG.
- FIG. 2 is a flowchart which shows the bonding process by the flip chip bonder in embodiment of this invention. It is a graph which shows the temperature change of the bonding tool in the bonding process by the flip chip bonder of this invention, and the temperature of an adsorption
- the flip chip bonder 101 of the present embodiment picks up and inverts a semiconductor chip 20 having an insulating resin film (NCF) 21 affixed to the surface 22, and then on the bonding stage 60. It is mounted (bonded) on the circuit board 65.
- the flip chip bonder 101 according to this embodiment includes a pickup stage 10 that holds a semiconductor chip 20 on an upper surface 11, and an inversion that picks up and picks up the semiconductor chip 20 from the upper surface 11 of the pickup stage 10 and reverses the picked up semiconductor chip 20.
- An adsorption reversal collet 30 as a mechanism and a bonding tool 50 that receives the inverted semiconductor chip 20 from the adsorption reversal collet 30 and bonds them to a circuit board 65 that is adsorbed and fixed to the bonding stage 60 are provided.
- the suction reversal collet 30 includes a collet body 31 that is a holding member having a suction surface 32 that sucks the semiconductor chip 20, and a rotational movement shaft 33 to which an end of the collet body 31 opposite to the suction surface 32 is attached. Yes.
- the rotational movement shaft 33 is moved in the vertical and horizontal directions by a rotational movement mechanism (not shown) and rotated around the central axis.
- the suction reversing collet 30 is configured such that the collet body 31 can be moved up and down, left and right and rotated around the rotational movement shaft 33 by moving or rotating the rotational movement shaft 33 up and down and left and right by a rotational movement mechanism. Yes.
- the rotational movement shaft 33 has a cylindrical cooling air passage 34 extending in the axial direction of the rotational movement shaft 33 and a radial direction of the rotational movement shaft 33 from the cooling air passage 34.
- An extending cooling air nozzle 35 is provided.
- the collet body 31 communicates with the cooling air nozzle 35 and has a first cooling air flow path 37 extending from the rotary moving shaft 33 toward the adsorption surface 32 of the collet body 31.
- a second cooling air channel 38 that communicates with the first cooling air channel 37 and extends in a direction along the adsorption surface 32 is provided. As shown in FIG.
- the cooling air that has flowed into the cooling air flow path 34 inside the rotary moving shaft 33 passes through the first cooling air flow path 37 and the second cooling air flow path 38 from the cooling air nozzle 35. Then, the collet body 31 is cooled by flowing out to the collet body 31.
- the cooling medium is not limited to air but may be a liquid such as water.
- the cooling air flow path 34, the cooling air nozzle 35, the first cooling air flow path 37, and the second cooling air flow path 38 constitute a cooling mechanism.
- the bonding tool 50 is attached to the bonding head 40 and is moved in the horizontal and vertical directions by the bonding head 40. Further, the bonding tool 50 has a suction surface 51 (lower surface in FIG. 1) for sucking the semiconductor chip 20, and a temperature at which the bumps formed on the semiconductor chip 20 can be melted (300 ° C. to 350 ° C.). A pulse heater (not shown) for heating the semiconductor chip 20 is incorporated.
- FIG. 4 shows bonding performed when flip chip bonding is performed by a conventional flip chip bonder in order to compare with a conventional flip chip bonder bonding process in which the collet body 31 of the adsorption reversal collet 30 is not cooled later.
- a change in the temperature TB of the tool 50 is indicated by a broken line a, and the time of the bonding cycle is indicated as times t11 to t16.
- a semiconductor chip 20 obtained by dicing a wafer is held on the upper surface 11 of the pickup stage 10.
- Bumps (not shown) are formed on the bonding surface (the upper surface in FIG. 3) of the semiconductor chip 20 and an insulating resin film (NCF) 21 is attached.
- NCF insulating resin film
- the suction inversion collet 30 descends to the bonding surface of the semiconductor chip 20 to be picked up.
- the adsorption reversal collet 30 includes the cooling air passage 34, the cooling air nozzle 35, the first cooling air passage 37, and the second cooling air passage 38 of the rotational movement shaft 33.
- the temperature TC of the collet body 31 of the adsorption reversal collet 30 is the initial temperature TC1 (for example, about 30 ° C.) shown in FIG. 4B.
- the insulating reversal collet 30 is lowered toward the semiconductor chip 20, and the insulating resin film (NCF) in which the suction surface 32 at the tip of the collet body 31 is attached to the bonding surface of the semiconductor chip 20. ) 21, the insulating resin film (NCF) 21 is adsorbed on the adsorption surface 32 of the collet body 31.
- the temperature TC of the collet body 31 is a temperature TC1 (for example, about 30 ° C.) that is lower than the melting temperature (60 to 70 ° C.) of the insulating resin film (NCF) 21.
- TC1 for example, about 30 ° C.
- the rotary moving shaft 33 of the suction inversion collet 30 is turned downward by rotating 180 degrees in the direction of the arrow 83 in FIG.
- the suction surface 32 of the collet body 31 faces upward, and the surface 22 of the semiconductor chip 20 (the surface opposite to the bonding surface on which the insulating resin film (NCF) 21 is attached) is upward in FIG. Then, the semiconductor chip 20 is inverted.
- the suction reversal collet is held up to the delivery position of the semiconductor chip 20 to the bonding tool 50 while holding the semiconductor chip 20 while keeping the suction surface 32 of the suction reversal collet 30 upward.
- Move 30 When the suction reversal collet 30 moves to the delivery position of the semiconductor chip 20, the bonding head 40 moves the suction surface 51 at the tip of the bonding tool 50 to the surface 22 of the semiconductor chip 20 (insulating resin film) at time t1 shown in FIG. (NCF) 21 is brought into contact with the surface opposite to the bonding surface to which 21 is affixed.
- the temperature TB of the bonding tool 50 at time t1 shown in FIG. 4B is a temperature TB2 as shown by a solid line A in FIG.
- the temperature TB2 is higher than the initial temperature TC1 (about 30 ° C.) of the collet body 31 of the adsorption inversion collet 30, for example, about 100 ° C.
- the bonding head 40 raises the bonding tool 50 as shown in FIG. As shown in FIG. 4G, the semiconductor chip 20 is pressed to a predetermined position on the circuit board 65 that is sucked and fixed onto the bonding stage 60 at time t101 shown in FIG.
- the bonding tool 50 has a temperature (300 ° C. to 350 ° C.) at which the bump formed on the semiconductor chip 20 can be melted by the pulse heater built in between the time t101 and the time t102 in FIG. To rise. Thereafter, between time t102 and time t103 shown in FIG.
- the bonding head 40 heats and presses the semiconductor chip 20 and the insulating resin film (NCF) 21 with the bonding tool 50 in a high temperature (300 ° C. to 350 ° C.) state. Then, the bumps and the insulating resin film (NCF) 21 formed on the semiconductor chip 20 are melted. Thereafter, the bonding head 40 stops the suction of the semiconductor chip 20 of the bonding tool 50, stops the pulse heater built in the bonding tool 50, and raises the bonding tool 50. At this time, in the flip chip bonder 101 of this embodiment, the bonding tool 50 is cooled by a cooling device (not shown). Then, the temperature TB of the bonding tool 50 starts decreasing from time t103 shown in FIG. 4A, and reaches the initial temperature TB2 (about 100 ° C.) at time t2 shown in FIG. 4B.
- the collet body 31 of the adsorption reversal collet 30 includes the cooling air passage 34, the cooling air nozzle 35, the first cooling air passage 37, and the second passage of the rotary moving shaft 33.
- the semiconductor chip 20 is transferred to the bonding tool 50 at time t1 shown in FIG. 4B, and the bonding tool 50 is moved as shown in FIG.
- the temperature decreases as shown by the line D in FIG.
- the temperature TC of the collet body 31 decreases to the initial temperature TC1 (about 30 ° C.) at time t2 shown in FIG.
- the semiconductor chip 20 is picked up and reversed by the adsorption reversal collet 30 which has been lowered to the initial temperature TC1 (about 30 ° C.), and the semiconductor chip 20 is delivered to the bonding tool 50 at the initial temperature TB1 (about 100 ° C.).
- the bonding process is repeated, and a large number of semiconductor chips 20 are sequentially bonded onto the circuit board 65.
- the temperature TC of the collet body 31 of the bonding tool 50 and the suction reversing collet 30 when performing flip chip bonding with a conventional flip chip bonder that does not cool the collet body 31 of the suction reversing collet 30 is described. The change will be described.
- the temperature TB of the bonding tool 50 in the initial state is an insulating resin as shown in FIG.
- the film is cooled to a temperature TB1 (about 50 ° C.) lower than the melting temperature (60 to 70 ° C.) of the film (NCF) 21.
- the temperature TC of the collet body 31 of the adsorption reversal collet 30 is a temperature TC1 (about 30 ° C.) that is about the same as the room temperature, as shown in FIG.
- the bonding tool 50 comes into contact with the semiconductor chip 20 adsorbed on the adsorption surface 32 of the collet body 31 of the adsorption inversion collet 30 as shown in FIG.
- the temperature TC of the collet body 31 slightly increases due to the temperature difference between the initial temperature TB1 (about 50 ° C.) of the bonding tool 50 and the initial temperature TC1 (about 30 ° C.) of the collet body 31. To do.
- the temperature TB of the bonding tool 50 is set to a temperature TB1 (about 50 ° C.) lower than the temperature TB2 (about 100 ° C.) in the case of the flip chip bonder 101 of the present embodiment. Since the semiconductor chip 20 is transferred from the suction inversion collet 30 to the bonding tool 50, the temperature rise at that time is the same as that of the flip chip bonder 101 of this embodiment described with reference to FIGS. 4 (a) and 4 (b). It is much smaller than the case.
- the bonding tool 50 is grounded to the circuit board 65 at time t111 shown in FIG. 5B, and the temperature TB of the bonding tool 50 is formed on the semiconductor chip 20 from time t111 to t112.
- the semiconductor chip is raised to a temperature (300 ° C. to 350 ° C.) at which the bumps can be melted, and then the bonding tool 50 in a high temperature (300 ° C. to 350 ° C.) state between time t112 and time t113 shown in FIG. 20 and the insulating resin film (NCF) 21 are heated and pressed to melt the bumps formed on the semiconductor chip 20 and the insulating resin film (NCF) 21.
- the bonding head 40 stops the suction of the semiconductor chip 20 of the bonding tool 50, stops the pulse heater built in the bonding tool 50, and raises the bonding tool 50.
- the bonding tool 50 is also cooled by a cooling device (not shown) even in the conventional flip chip bonder. Then, the temperature TB of the bonding tool 50 starts to decrease from time t113 in FIG. 5A, and reaches the initial temperature TB1 (about 50 ° C.) at time t12 shown in FIG. 5B.
- the semiconductor chip 20 is transferred from the suction inversion collet 30 to the bonding tool 50 at time t11 shown in FIG.
- the temperature of the collet body 31 hardly decreases and remains slightly higher than the initial temperature TC1 (about 30 ° C.).
- the temperature of the collet body 31 gradually increases.
- the temperature TC3 is the same as the temperature TB1 (about 50 ° C.) that is a temperature when the bonding tool 50 receives the semiconductor chip 20.
- the semiconductor receiving temperature of the bonding tool 50 is from 300 to 350 ° C. during bonding to a temperature TB1 (about 50 ° C.). It is necessary to lower it.
- the bonding tool 50 is normally cooled by blowing air at room temperature (about 25 ° C. to about 30 ° C.)
- the temperature is lowered to the temperature TB1 (about 50 ° C.) as in the flip chip bonder of this embodiment. If the temperature is lowered to the temperature TB2 (about 100 ° C.), a large difference in the cooling time appears.
- the time for reducing the temperature of the bonding tool 50 from TB3 (300 to 350 ° C.) to TB1 (about 50 ° C.) (shown in FIG. 4).
- (Between time t103 and time t12) and time for reducing the temperature of the bonding tool 50 from the temperature TB3 (300 to 350 ° C.) to TB2 (about 100 ° C.) in the flip chip bonder 101 of this embodiment (time shown in FIG. 4)
- the time difference ⁇ t between t103 and time t2) is about 4 to 5 seconds.
- the cycle time (between times t11 and t12 shown in FIG.
- the flip chip bonding cycle time (between the time t1 and the time t2 shown in FIG. 4) is 14-15. It can be shortened to about 2/3 from a second to about 10 seconds. Further, in the flip chip bonder 101 of the present embodiment, the bonding tool 50 is brought into contact with the semiconductor chip 20 sucked and held on the suction face 32 of the suction reversing collet 30 and then the semiconductor chip 20 is sucked and held on the suction reversing collet 30.
- the semiconductor chip 20 Since the semiconductor chip 20 is delivered to the bonding tool 50 by being opened, it is possible to prevent the position of the semiconductor chip 20 from being greatly displaced during delivery of the semiconductor chip 20 such as the conventional flip chip bonder described in Patent Document 1. Thus, the bonding quality can be maintained.
- the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 is made higher than that of the prior art by cooling the collet body 31 of the suction inversion collet 30, and bonding after bonding is performed. Since the cooling time of the tool 50 can be shortened, the flip chip bonding cycle time can be greatly shortened.
- the flip chip bonder 101 of this embodiment has an effect that the bonding time can be shortened without deteriorating the bonding quality.
- the bonding tool 50 for the cooling temperature TC1 of the collet body 31 of the adsorption reversal collet 30 (the temperature TC1 after cooling of the collet body 31 indicated by the line D in FIG. 4B).
- the relationship of the receiving temperature TB2 of the semiconductor chip 20 (temperature TB2 after cooling of the bonding tool 50 shown by the line A in FIG. 4A) will be described in more detail.
- the temperature of the collet body 31 rises as shown in FIGS. 7A and 7B from the high temperature bonding tool 50 at the temperature TB2. This is caused by the movement of heat toward the low temperature collet body 31 of TC1.
- the white arrow indicates the direction of heat transfer, and the thickness indicates the amount of heat transfer.
- the temperature TC2 of the collet body 31 after the temperature rise needs to be about 50 ° C. at which the insulating resin film (NCF) 21 does not soften or melt.
- NCF insulating resin film
- the cooling temperature TC1 of the collet body 31 and the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 may be selected by a graph as shown in FIG. 6, for example.
- the line e in FIG. 6 indicates that the width of the semiconductor chip 20 to be transferred is as large as D1, and the amount of heat transferred from the bonding tool 50 to the collet body 31 when the semiconductor chip 20 is transferred.
- the temperature TC of the collet body 31 is large and easily rises, the relationship between the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 with respect to the cooling temperature TC1 of the collet body 31 so that the temperature TC2 of the collet body 31 is 50 ° C. or less.
- the line f of the semiconductor chip 20 to be transferred is as small as D2, and the collet is applied from the bonding tool 50 when the semiconductor chip 20 is transferred.
- the temperature of the collet main body 31 is increased.
- TC2 which is a line that defines the relation receipt temperature TB2 of the semiconductor chip 20 of the bonding tool 50 with respect to cooling temperature TC1 of the collet body 31 such that the 50 ° C. or less.
- the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 is 50 ° C. as described in the conventional flip chip bonding (point g in FIG. 6). This is the same whether the width of the semiconductor chip 20 is large or small.
- the temperature rise of the collet body is 50 ° C. or less.
- the collet body 31 is cooled by a low-temperature refrigerant and the temperature of the collet body 31 is lowered to about 10 ° C., even when the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 is increased to 100 ° C.
- the temperature rise of the collet body is 50 ° C. or less.
- the cooling temperature TC1 of the collet body 31 is, for example, 30 ° C.
- the bonding tool Even when the receiving temperature TB2 of 50 semiconductor chips 20 is increased to 150 ° C., the temperature rise of the collet body is 50 ° C. or less. Further, when the collet body 31 is cooled by a low-temperature refrigerant and the temperature of the collet body 31 is lowered to about 10 ° C., even when the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 is increased to 250 ° C. The temperature rise of the collet body is 50 ° C. or less.
- the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 can be increased, and the bonding cycle time can be further shortened. Further, when the size of the semiconductor chip 20 to be delivered is reduced, the amount of heat transferred from the bonding tool 50 to the collet body 31 when delivering the semiconductor chip 20 is reduced even when the cooling temperature TC1 of the collet body 31 is the same.
- the receiving temperature TB2 of the bonding tool 50 for the semiconductor chip 20 can be made higher, and the bonding cycle time can be made shorter.
- the temperature rise of the collet body 31 is small even when the amount of heat transferred from the bonding tool 50 to the collet body 31 is the same.
- the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 can be increased, and the bonding cycle time can be further shortened.
- the cooling temperature TC1 of the collet main body 31 and the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 may be determined by, for example, a test in consideration of the above characteristics. Note that. FIG. 6 is a conceptual diagram showing characteristics of the relationship between the cooling temperature TC1 of the collet body 31 and the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50. The relation and characteristics may be other than the straight line shown in FIG. .
- FIGS. 1 to 7 The parts described with reference to FIGS. 1 to 7 are denoted by the same reference numerals, and the description thereof is omitted.
- the flip chip bonder 102 of this embodiment includes a cooling stage 110 that cools the collet main body 31 by bringing the suction surface 32 of the suction inversion collet 30 into contact with it as a cooling mechanism.
- the cooling stage 110 includes a frame 112 as a base portion, a ground plate 114 having a ground surface 114 a to which the suction surface 32 at the tip of the collet body 31 is grounded, and a contact between the ground plate 114. And a cooling member 116 including a heat dissipating fin 115 that is a heat dissipating member attached to a surface opposite to the ground 114a.
- the grounding plate 114 is configured so that the direction of the grounding surface 114a is variable by the support mechanism 200. It is attached to the frame 112.
- a cooling nozzle 119 that is attached to the side surface of the frame 112 via a bracket 121 and blows cooling air from the blowout hole 120 along the vicinity of the surface of the ground contact surface 114a, and cooling that supplies the cooling air to the cooling nozzle 119.
- Air supply pipes 117 and 118 are attached.
- a cooling fan 122 that blows cooling air to the radiating fin 115 is disposed below the radiating fin 115 of the cooling member 116.
- the support mechanism 200 is rotatable around a Y axis 127 that is a second axis that passes through the center 125 of the ground plate 114 and is orthogonal to the X axis 126 along the ground surface 114 a.
- a rectangular annular intermediate frame 113 attached to the inside of the square opening of the frame 112 by the pin 123, and attached to the inside of the intermediate frame 113, passing through the center 125 of the ground plate 114 and along the ground plane 114a.
- a pin 124 that rotatably supports the ground plate 114 around the X axis 126 that is the first axis.
- the ground plate 114 is rotatable around the X axis 126 and the Y axis 127 passing through the center 125 with respect to the frame 112, and the direction of the ground surface 114a with respect to the frame 112 or the inclination of the ground surface 114a is variable. So that it is supported. Also, as shown in FIG. 10, the radiation fin 115 is fixed to the lower surface of the ground plate 114 (the surface opposite to the ground surface 114a) and moves integrally with the ground plate 114.
- the cooling member 116 including 114 and the radiation fin 115 is rotatable around the X axis 126 and the Y axis 127 passing through the center 125 of the ground plate 114 as a whole.
- the grounding surface 114a which is the surface of the grounding plate 114, is a plane that allows the suction surface 32 at the tip of the collet body 31 to be in close contact with each other, and the heat capacity of the cooling member 116 including the grounding plate 114 and the radiation fin 115 is The heat capacity of the collet body 31 is configured to be larger.
- the suction surface 32 of the suction reversal collet 30 is cooled in contact with the upper surface of the cooling stage 110, and is at a room temperature of about 30 ° C., for example.
- the rotational movement shaft 33 is moved up and down and left and right by a rotational movement mechanism (not shown) to just above the semiconductor chip 20 to be picked up the collet body 31 of the suction inversion collet 30.
- the suction reversal collet 30 is lowered onto the semiconductor chip 20 to be picked up as indicated by an arrow 92 in FIG. As shown in FIG.
- the rotational movement shaft 33 is moved, and the collet body 31 is moved to a delivery position for delivering the semiconductor chip 20 to and from the bonding tool 50 as shown in FIG.
- the bonding head 40 has the surface 22 (insulating resin) of the semiconductor chip 20 in which the suction surface 51 of the bonding tool 50 is sucked and held on the suction surface 32 of the collet body 31.
- the semiconductor chip 20 is adsorbed by being brought into contact with the bonding surface on which the film (NCF) 21 is attached, and the semiconductor chip 20 is received from the collet body 31 of the adsorption inversion collet 30.
- the temperature TC of the collet body 31 rises from an initial temperature TC1 of about 30 ° C. to a temperature TC2 of about 50 ° C. as shown at time t1 in FIG.
- the bonding head 40 grounds the bonding tool 50 to a predetermined position on the circuit board 65 fixed to the bonding stage 60.
- the bonding tool 50 is heated by a pulse heater built in the bonding tool 50 to melt the bumps and the insulating resin film (NCF) of the semiconductor chip 20, and the semiconductor chip 20 is bonded onto the circuit board 65.
- NCF insulating resin film
- the temperature of the collet body 31 after delivering the semiconductor chip 20 is a temperature TC2 of about 50 ° C.
- the rotational movement mechanism rotates the suction surface 32 of the rotational movement shaft 33 to the lower side and moves the center of the collet body 31 to the center of the cooling stage 110.
- the cooling fan 122 of the cooling stage 110 is rotating, and cooling air is being sent to the radiation fin 115 as indicated by the arrow R in the figure.
- the fin 115 is in a substantially normal temperature state.
- the collet body 31 is moved downward (Z direction minus side) as indicated by an arrow P shown in FIG. 14B, and the suction surface 32 of the collet body 31 is grounded to the grounding surface 114a on the surface of the grounding plate 114.
- the ground plate 114 is rotatable about the X axis 126 and the Y axis 127 passing through the center 125 of the ground plate 114 with respect to the frame 112 by the support mechanism 200.
- the inclination of the grounding surface 114a follows the inclination of the suction surface 32 (the direction of the tip surface) of the collet body 31 around the X axis 126, It rotates freely around the Y axis 127.
- the suction surface 32 of the collet body 31 is in close contact with the ground contact surface 114a. Since the ground plate 114 is fixed integrally with the radiating fin 115, when the suction surface 32 of the collet body 31 is in close contact with the ground surface 114a, the heat of the collet body 31 is indicated by an arrow S in FIG. Then, it flows toward the ground plate 114 and the heat radiation fin 115 held at room temperature.
- the heat capacity of the cooling member 116 including the ground plate 114 and the radiating fin 115 is configured to be larger than the heat capacity of the collet body 31, the temperature of the collet body 31 rapidly decreases. Further, when the suction surface 32 of the collet body 31 is in close contact with the ground surface 114a of the ground plate 114, the direction along the ground surface 114a from the blowing hole 120 of the cooling nozzle 119 attached to the side of the frame 112 (arrow Q) The cooling air is jetted out in the direction of () and applied to the tip of the collet body 31, and cooling is also performed from the outer surface of the collet body 31.
- the temperature of the collet body 31 decreases to the initial temperature TC1 shown in FIG.
- the cooling fan 122 of the cooling stage 110 continues to send cooling air to the radiating fins 115 even after the suction surface 32 of the collet body 31 is separated from the ground surface 114 a of the ground plate 114. Therefore, the cooling member 116 constituted by the ground plate 114 and the heat radiation fin 115 is cooled to the initial temperature TC1 while the bonding tool 50 is bonding the semiconductor chip 20.
- the semiconductor chip 20 is picked up and bonded to the next semiconductor chip 20 to be picked up next.
- the flip chip bonder 102 of this embodiment has an effect that the bonding time can be shortened without deteriorating the bonding quality, like the flip chip bonder 101 of the embodiment described with reference to FIGS. 1 to 7. .
- the cooling stage 110 is supported by combining two pins 123 and 124 and the intermediate frame 113 as shown in FIGS. 10 and 11. It has been described that the grounding plate 114 is attached to the frame 112 by the mechanism 200 and is rotatable about the XY axes. However, if the grounding plate 114 is rotatable about the XY axes, the following description will be given. It is good also as a structure which does.
- the configuration of the cooling stage 110 having another configuration will be described with reference to FIGS. Parts similar to those of the embodiment described with reference to FIGS. 9 to 11 are denoted by the same reference numerals, and description thereof is omitted.
- the cooling stage 110 shown in FIG. 15 pivots the support mechanism 200 of the cooling stage 110 described with reference to FIGS. 9 to 11 by the support pin 212 provided in the frame 112 with the recess 211 provided in the lower surface of the ground plate 114.
- the pivot support mechanism 210 is supported.
- the cooling stage 110 shown in FIG. 16 is a spring support mechanism 220 that supports the four corners of the ground plate 114 with springs 221. Further, instead of the pivot support mechanism 210 of the cooling stage 110 shown in FIG.
- a spherical recess provided on the lower surface of the ground plate 114 may be supported by a spherical pedestal provided on the frame 112.
- the cooling stage 110 shown in FIGS. 15 and 16 is rotatable with respect to the XY axes and is also rotatable with respect to the Z axis.
- the heat dissipating fins 115 may be integrated with the ground plate 114 so that the heat of the ground plate 114 can be dissipated, and may be disposed beside the ground plate 114 as shown in FIG. Further, the cooling member 116 may be cooled not by the heat radiating fins 115 but by a coolant other than air, for example, by flowing cooling water therein.
- the collet body 31 of the suction inversion collet 30 is cooled by the cooling stage 110, but the same structure as the cooling stage 110 is used.
- another cooling stage for closely cooling the suction surface 51 at the tip of the bonding tool 50 may be provided to cool the bonding tool 50 similarly to the collet body 31.
- the flip chip bonder 103 is a semiconductor in which the semiconductor chip 20 inverted by the suction inversion collet 30 is inverted by the suction inversion collet 30 instead of being directly transferred to the bonding tool 50.
- the chip 20 is received by the collet 71 attached to the transfer head 70 and placed on the surface 76 of the transfer stage 75, and the transfer stage 75 holds the semiconductor chip 20 in an inverted state while passing it to the bonding tool 50. Transport to.
- the bonding tool 50 receives the inverted semiconductor chip 20 from the surface 76 of the transfer stage 75 and bonds it onto the circuit board 65 that is sucked and fixed onto the bonding stage 60.
- the semiconductor chip 20 is transferred between the bonding tool 50 and the transfer stage 75. Therefore, when the semiconductor chip 20 is transferred, the temperature of the transfer stage 75 is as shown in FIG. As with the collet body 31 shown in FIG. 4, the temperature rises from the temperature TC1 to the temperature TC2.
- the suction inversion collet 30 is at room temperature and the temperature does not increase. .
- the suction reversal collet 30, the transfer head 70, the collet 71, and the transfer stage 75 constitute a reversing mechanism, and the transfer stage 75 is a holding member that holds the reversed semiconductor chip 20.
- the transfer stage 75 communicates with an air inflow passage 77 extending from the lower surface (the surface opposite to the surface 76 holding the semiconductor chip 20) toward the surface 76, and the air inflow passage 77.
- a horizontal cooling channel 78 extending in a direction along the surface 76.
- the cooling air that has flowed into the air inflow passage 77 passes through the horizontal cooling passage 78 and flows out of the side surface of the transfer stage 75 to cool the transfer stage 75.
- the transfer stage 75 is cooled by cooling air.
- the cooling medium is not limited to air, and a liquid such as water may be used.
- the air inflow passage 77 and the horizontal cooling passage 78 constitute a cooling mechanism.
- the bonding tool 50 is attached to the bonding head 40 and moved in the horizontal and vertical directions by the bonding head 40. Further, the bonding tool 50 has a suction surface 51 (lower surface in FIG. 1) for sucking the semiconductor chip 20, and a temperature at which the bumps formed on the semiconductor chip 20 can be melted (300 ° C. to 350 ° C.). A pulse heater (not shown) for heating the semiconductor chip 20 is incorporated.
- the semiconductor chip 20 is sucked, picked up and reversed by the suction reversing collet 30.
- the suction surface 72 of the collet 71 attached to the transfer head 70 is brought into contact with the surface 22 of the semiconductor chip 20 to bring the semiconductor chip 20 into the collet body of the suction inversion collet 30.
- the collet 71 is moved onto the transfer stage 75 by the transfer head 70, and the semiconductor chip 20 adsorbed on the collet 71 is received by the surface 76 of the transfer stage 75. hand over.
- the temperature of the transfer stage 75 is about 30 ° C. from the initial temperature TC 1 of about 30 ° C., similar to the temperature of the collet body 31 shown at time t1 in FIG.
- the temperature rises to TC2.
- the transfer stage 75 is cooled by the cooling air flowing through the air inflow passage 77 and the horizontal cooling passage 78, and the temperature thereof is the initial temperature similar to the temperature of the collet body 31 at time t2 in FIG. Return to TC1.
- the semiconductor chip 20 receiving temperature TB2 of the bonding tool 50 is made higher than that of the prior art by cooling the transfer stage 75 that transfers the semiconductor chip 20 to and from the bonding tool 50.
- the cooling time of the bonding tool 50 after bonding can be shortened, the cycle time of flip chip bonding can be greatly shortened.
- the relationship between the cooling temperature of the transfer stage 75 and the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 is related to the cooling temperature TC1 of the collet body 31 and the semiconductor chip of the bonding tool 50 described with reference to FIGS.
- the amount of heat that moves from the bonding tool 50 to the transfer stage 75 when the semiconductor chip 20 is transferred is reduced even when the cooling temperature of the transfer stage 75 is the same.
- the receiving temperature TB2 of the semiconductor chip 20 of the tool 50 can be further increased, and the bonding cycle time can be further shortened.
- the heat capacity of the transfer stage 75 is larger than the heat capacity of the bonding tool 50, the temperature rise of the transfer stage 75 is reduced even when the amount of heat transferred from the bonding tool 50 to the transfer stage 75 is the same.
- the receiving temperature TB2 of the semiconductor chip 20 of the bonding tool 50 can be increased, and the bonding cycle time can be further shortened.
- a flip chip bonder 104 according to another embodiment of the present invention will be described with reference to FIG. Parts similar to those of the embodiment described above with reference to FIGS. 17 to 20 are denoted by the same reference numerals, and description thereof is omitted.
- the cooling stage 150 that cools the moving stage 75 is disposed on the flip chip bonder 103 described with reference to FIGS. 17 to 20, and the moving stage 75 is moved in the vertical direction.
- the moving stage 75 is cooled by bringing the surface 76 into close contact with the ground plate 154 of the cooling stage 150.
- the cooling stage 150 has a configuration in which the cooling stage 110 of the embodiment described with reference to FIGS. 8 to 14 is turned upside down.
- the moving stage 75 is moved up and down to be in close contact with the ground plate 154 of the cooling stage 150.
- the cooling stage 150 is moved up and down to move the ground plate 154. You may make it closely_contact
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Abstract
Description
Claims (16)
- 半導体チップを反転させる反転機構と、
前記反転機構で反転させた前記半導体チップを前記反転機構から受け取って基板にボンディングするボンディングツールと、
前記反転機構を冷却する冷却機構と、を有するフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記反転機構は、反転した前記半導体チップを保持する保持部材を含み、
前記冷却機構は、前記ボンディングツールが前記半導体チップを受け取る前に前記保持部材の温度を所定の温度まで冷却しておくフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記保持部材の熱容量は、前記ボンディングツールの熱容量よりも大きいフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記保持部材は、前記半導体チップを吸着して反転させた状態で前記ボンディングツールに受け渡す吸着反転コレットであるフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記保持部材は、前記半導体チップを吸着して反転させた状態で前記ボンディングツールに受け渡す吸着反転コレットであるフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記保持部材は、前記半導体チップを反転した状態で移動させ、前記半導体チップを反転させた状態で前記ボンディングツールに受け渡す移送ステージであるフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記保持部材は、前記半導体チップを反転した状態で移動させ、前記半導体チップを反転させた状態で前記ボンディングツールに受け渡す移送ステージであるフリップチップボンダ。 - 請求項2から7のいずれか1項に記載のフリップチップボンダであって、
前記冷却機構は、前記保持部材の内面あるいは外面を冷却するフリップチップボンダ。 - 請求項2から7のいずれか1項に記載のフリップチップボンダであって、
前記冷却機構は、
基体部と、
前記保持部材の表面が接地する接地面を有する接地板と、前記接地板に取り付けられた放熱部材と、を含む冷却部材と、を備え、
前記冷却部材は、前記保持部材の表面の方向に倣うように前記接地面の方向を可変とする支持機構によって前記基体部に支持されているフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記冷却部材の熱容量は、前記保持部材の熱容量よりも大きいフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記放熱部材は、前記接地板の接地面と反対側の面に取り付けられているフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記放熱部材は、放熱フィンであり、
前記放熱フィンを冷却する冷却ファンを備えているフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記支持機構は、前記接地面に沿った第一の軸と、前記接地面に沿い、前記第一の軸と直交する第二の軸との2つの軸の回りに回転自在となるように前記接地板を前記基体部に支持するフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記基体部に設けられ、その表面が前記接地面に接地している前記保持部材に冷却空気を吹き付ける冷却ノズルを備えているフリップチップボンダ。 - 請求項9に記載のフリップチップボンダであって、
前記接地板の前記接地面は、前記保持部材の前記表面が接地した際に、前記保持部材から前記接地板に向って熱伝導が生じるフリップチップボンダ。 - フリップチップボンディング方法であって、
半導体チップを反転させる反転機構と、前記反転機構で反転させた前記半導体チップを前記反転機構から受け取って基板にボンディングするボンディングツールと、前記反転機構を冷却する冷却機構と、を有するフリップチップボンダを準備する工程と、
前記冷却機構により前記ボンディングツールが前記半導体チップを受け取る前に前記保持部材の温度を所定の温度まで冷却しておく冷却工程と、を有するフリップチップボンディング方法。
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SG11201507246VA SG11201507246VA (en) | 2013-03-12 | 2013-09-20 | Flip chip bonder and flip chip bonding method |
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WO2023145558A1 (ja) * | 2022-01-27 | 2023-08-03 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
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TW201436063A (zh) | 2014-09-16 |
CN104335336A (zh) | 2015-02-04 |
TWI490956B (zh) | 2015-07-01 |
US9536856B2 (en) | 2017-01-03 |
KR20150013622A (ko) | 2015-02-05 |
US20150380381A1 (en) | 2015-12-31 |
SG11201507246VA (en) | 2015-10-29 |
KR101623368B1 (ko) | 2016-05-23 |
JPWO2014141514A1 (ja) | 2017-02-16 |
CN104335336B (zh) | 2017-03-15 |
JP5675008B1 (ja) | 2015-02-25 |
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