WO2014119803A1 - 接合体及びその製造方法 - Google Patents
接合体及びその製造方法 Download PDFInfo
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- WO2014119803A1 WO2014119803A1 PCT/JP2014/052811 JP2014052811W WO2014119803A1 WO 2014119803 A1 WO2014119803 A1 WO 2014119803A1 JP 2014052811 W JP2014052811 W JP 2014052811W WO 2014119803 A1 WO2014119803 A1 WO 2014119803A1
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- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
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- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
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- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B1/00—Thermonuclear fusion reactors
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- G21B1/13—First wall; Blanket; Divertor
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- B32B2262/10—Inorganic fibres
- B32B2262/106—Carbon fibres, e.g. graphite fibres
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- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/10—Inorganic particles
- B32B2264/107—Ceramic
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- C04B2237/08—Non-oxidic interlayers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y10T428/24545—Containing metal or metal compound
Definitions
- the present invention relates to a joined body and a manufacturing method thereof, and more particularly to a joined body of a refractory metal and a carbon material and a manufacturing method thereof.
- Carbon materials such as CFC (carbon fiber reinforced carbon composite material) and graphite materials do not melt even at a high temperature of 3000 ° C. or higher, and have the advantage of being less deformed by heat than metals.
- CFC carbon fiber reinforced carbon composite material
- Patent Document 1 it has been proposed to use a joined body in which a cooling pipe (copper alloy or stainless steel) is joined to CFC or graphite for a divertor plate of a fusion apparatus.
- the carbon material has a problem that it is worn or redeposited by plasma. Therefore, the use of tungsten in place of CFC has been studied.
- tungsten has problems such as large weight and poor workability.
- the method described in (1) since the wettability of the metal with respect to the carbon material is poor, it is difficult to join the two, and stress concentration is caused by the difference in thermal expansion coefficient between the refractory metal material and the carbon material. There was a problem that it occurred and was easily damaged. Further, the method described in (2) has a problem that the thickness of the tungsten layer is limited to about several hundred ⁇ m, and it is difficult to form a thick tungsten layer.
- the main object of the present invention is to provide a novel joined body and a manufacturing method thereof.
- the present invention provides a joined body having a structure in which a carbon material layer and a metal layer are joined, wherein a ceramic and a sintering aid are interposed between the carbon material layer and the metal layer.
- the carbon material layer, the bonding layer, and the metal layer are bonded by a sintering method.
- the present invention it is possible to facilitate the joining of the metal layer and the carbon material layer while increasing the thickness of the metal layer, and to obtain an excellent effect of suppressing the breakage of the joined body.
- the present invention is a joined body having a structure in which a carbon material layer and a metal layer are joined, and a joining layer containing ceramics and a sintering aid is formed between the carbon material layer and the metal layer.
- the carbon material layer, the bonding layer, and the metal layer are bonded by a sintering method. If the carbon material layer, the bonding layer containing ceramics and a sintering aid, and the metal layer are bonded by a sintering method, the carbon material layer and the metal layer are firmly bonded. It can suppress that a crack, peeling, etc. arise in a joining interface with a metal layer.
- the bending strength of the joined body is improved.
- a carbon fiber composite material [trade name: CX2002U] manufactured by Toyo Tanso
- the three-point bending strength of this carbon fiber composite material is about 47 MPa.
- a joined body (tungsten having a thickness of about 1 mm and a carbon fiber composite material having a thickness of 3.6 mm) in which tungsten is joined to the carbon fiber composite material (CX2002U) has a width of 3.19 mm and a thickness of 4.
- tungsten thickness is about 1 mm
- carbon fiber composite material thickness is 3.6 mm
- carbon fiber composite material side is up (compression surface)
- tungsten side is down (tensile surface)
- the 3-point bending strength is 60 MPa when the distance between the fulcrums is 15 mm.
- bending strength is dramatically improved by joining tungsten (metal) to a carbon fiber composite material (carbon material).
- the carbon material of the carbon material layer is preferably made of a carbon fiber composite material, isotropic graphite, anisotropic graphite material, or metal-impregnated graphite material. However, it is not limited to these.
- the thickness of the bonding layer is desirably 10 ⁇ m or more and 150 ⁇ m or less.
- the thickness of the bonding layer is less than 10 ⁇ m, SiC does not sufficiently penetrate into the carbon material layer in the bonding between the carbon material layer and the bonding layer. For this reason, the anchor effect is not sufficiently exhibited, and there is a possibility that the bonding becomes insufficient.
- the thickness of the bonding layer exceeds 150 ⁇ m, the thermal stress increases due to the difference in the linear expansion coefficient, etc., and there is a possibility that the thermal shock becomes weak or cracking is likely to occur. In addition, the thermal conductivity may be reduced.
- the thickness of the bonding layer is not limited to the above thickness, and varies depending on the type of ceramic used.
- the thickness of the bonding layer (ceramic layer) is preferably 30 ⁇ m or more and 500 ⁇ m or less. Since the bonding mechanism is different between the case where bonding is performed using AlN and the case where bonding is performed using SiC, it is preferable that the range be limited to this range. Since the joining mechanism using AlN is joining by permeation of the sintering aid, if the thickness is less than 30 ⁇ m, the amount of the sintering aid becomes too small to be joined. Therefore, the thickness of the bonding layer is set to 30 ⁇ m or more.
- the amount of the sintering aid contained in the raw material forming the bonding layer is preferably regulated to 3 mass% or more, and more preferably regulated to 5 mass% or more and 30 mass% or less. Desirably (in the case where SiC is used as the ceramic, the amount of the sintering aid contained in the raw material for forming the bonding layer is preferably regulated to 3 mass% or more and 20 mass% or less).
- the reason for restricting the thickness of the bonding layer to 500 ⁇ m or less is to suppress a decrease in heat conduction and an increase in thermal stress.
- the thickness of the bonding layer is preferably 10 ⁇ m or more and 500 ⁇ m or less regardless of the material type used for the bonding layer.
- the bonding layer enters 5 ⁇ m or more into the structure of the carbon material layer. This is because a sufficient anchor effect is exhibited.
- the carbon material layer is preferably made of a carbon fiber composite material
- the metal layer is preferably made of tungsten.
- tungsten has excellent characteristics such as plasma resistance, high strength, dust generation resistance, high heat conduction, and high electric conduction, and the light weight, heat resistance, high heat conduction, electric conduction of carbon fiber composite materials. It can exhibit properties such as corrosion resistance, high strength, and easy processing.
- the metal layer is made of tungsten and SiC is used as ceramics
- various conditions such as the thickness of the bonding layer and the temperature and pressure during sintering
- tungsten carbide is produced, but tungsten silicide or tungsten carbide silicide may be produced. That is, when the metal layer is made of tungsten and SiC is used as the ceramic, at least one of tungsten carbide, tungsten silicide, and tungsten carbide silicide is generated at the interface between the metal layer and the bonding layer. .
- the ash content of the carbon material of the carbon material layer is desirably 20 ppm or less. By regulating in this way, it is possible to prevent impurities from being mixed in the device using the joined body.
- ash refers to inorganic impurities other than carbon that remain after the carbon-based material burns.
- the present invention is not limited to this.
- the joined body when used for a divertor plate of a nuclear fusion reactor, there is a concern about diffusion of carbon into a metal layer at a high temperature. Absent. However, when the temperature is 1500 ° C. or higher, there is no problem in a short time, but carbon may be diffused when exposed to a long time. Therefore, it is preferable to design the fusion reactor so that the temperature of the joined body is 1400 ° C. or lower.
- a mixed powder composed of ceramics and a sintering aid may be disposed on the surface of the carbon material layer.
- a mixed powder of sinter and sintering aid may be mixed with an organic binder, a plasticizer, and a solvent, and then rolled into a tape shape may be disposed on the surface of the carbon material layer.
- content of ceramics and a sintering auxiliary agent can be changed in the thickness direction (it can incline). Therefore, since the thermal stress between the carbon material layer and the bonding layer and between the bonding layer and the metal layer can be relaxed, the bonded body can be further prevented from being damaged.
- the metal may be a powder or a plate.
- the present invention is a joined body having a structure in which a carbon fiber composite material layer and a tungsten layer are joined, and SiC and a sintering aid are provided between the carbon fiber composite material layer and the tungsten layer.
- a bonding layer containing Y 2 O 3 and Al 2 O 3 is formed, and the carbon fiber composite material layer, the bonding layer, and the tungsten layer are bonded by a sintering method.
- the carbon fiber composite material layer, the bonding layer containing ceramics and a sintering aid, and the tungsten layer are bonded by a sintering method, the carbon fiber composite material layer and the tungsten layer are firmly bonded, It is possible to suppress the occurrence of cracks, peeling and the like at the bonding interface between the carbon fiber composite material layer and the tungsten layer. Further, since bonding is performed using a sintering method, the thickness of the tungsten layer can be increased, and the bonding between the tungsten layer and the carbon fiber composite material layer can be easily performed. Further, the presence of the bonding layer containing ceramics can suppress the carbon of the carbon fiber composite material layer from diffusing into the tungsten layer, so that the bonding force is maintained for a long period of time.
- the bending strength of the joined body is improved, and the tungsten has excellent characteristics such as plasma resistance, high strength, dust generation resistance, high heat conduction, and high electric conduction, and carbon fiber.
- the composite material can exhibit characteristics such as lightness, heat resistance, high heat conduction, electric conduction, corrosion resistance, high strength, and easy processing.
- a mixture composed of a ceramic composed of SiC and a sintering aid composed of Y 2 O 3 and Al 2 O 3 is disposed, and tungsten is disposed on the mixture to form a laminate.
- a second step of sintering the laminate and joining the carbon fiber composite material layer and the tungsten layer with a joining layer containing the sintering aid and the ceramic is characterized by that.
- the ceramic in the bonding layer is not limited to SiC and AlN, and TiC, ZrC, B 4 C, TaC, HfC, and the like can be used.
- a sintering aid in the bonding layer oxidation of Y 2 O 3 , Al 2 O 3 , SiO 2 , La 2 O 3 , CeO 2 , Sm 2 O 3 , Yb 2 O 3 , Lu 2 O 3, etc.
- a simple substance or a mixed powder thereof can be used.
- the sintering aid helps to sinter the bonding layer and moves to the carbon material layer side during sintering, thereby contributing to the bonding between the bonding layer and the carbon material layer.
- the sintering temperature may be 1700 ° C. or higher
- a metal having a high melting point As the metal of the metal layer.
- Mo molybdenum
- Ta tantalum
- Zr zirconium
- V vanadium
- an alloy thereof, or the like can be used in addition to the tungsten (W).
- beryllium (Be) or beryllia (BeO) can also be used.
- the melting point of the metal is 1700 ° C. or higher, preferably 2000 ° C. or higher, particularly 2400 ° C. or higher.
- the shape of the metal raw material forming the metal layer may be any shape such as powder, pellet, foil, plate, etc., and these may be used in combination. it can.
- the metal layer can be formed with an arbitrary thickness of 0.1 mm or more. When used as a diverter plate or the like, it is preferably 1 to 100 mm, preferably 3 to 50 mm, more preferably 5 to 20 mm. The lower limit of the thickness is regulated in consideration of melting due to disruption and wear due to sputtering.
- the thickness of the carbon material layer is not limited, it is preferably regulated to 50 mm or less in consideration of thermal conductivity and the like. Moreover, when using a CFC material as a carbon material layer, it is necessary to consider the anisotropy of the CFC material.
- the above requirements can be satisfied if the joined body has the following configuration.
- the condition (a) can be satisfied.
- the condition (b) can be satisfied.
- the condition (c) can be satisfied.
- the joined body of the present invention is used for a divertor plate or the like, not all of the diverter plate or the like is formed of a metal such as tungsten (that is, the thickness of tungsten or the like is reduced and the amount of tungsten or the like used is reduced). Therefore, the condition (f) can be satisfied.
- the condition (e) can be satisfied.
- the joined body is used for a diverter plate or the like, it is particularly desirable to use SiC or AlN as ceramics and Y 2 O 3 or Al 2 O 3 as a sintering aid.
- the maximum temperature of the surface of the divertor plate or the like is controlled to be about 1400 to 1600 ° C.
- the temperature of the bonded portion is lower than this (600 to 1200 ° C.), but this is to prevent the bonding layer from melting or becoming structurally brittle at that temperature.
- the carbon material layer having a Young's modulus lower than that between the cooling mechanism and the metal layer made of copper alloy or stainless steel is the structure of the present invention. Can be arranged. Accordingly, since the thermal stress can be further relaxed, it is possible to use the joined body even under a condition where the temperature becomes higher.
- Example 1 On the CFC layer (carbon fiber composite material [trade name: CX2002U] manufactured by Toyo Tanso Co., Ltd., having a diameter of 40 mm, a thickness of 10 mm, and an ash content of 5 ppm), 0.25 g of SiC (Y 2 O with a ratio of 3 mass% to SiC) 3 and 6 mass% Al 2 O 3 were added as sintering aids) and 25 g tungsten powder were sequentially arranged to produce a laminate.
- the laminate was sintered by pulsed current sintering under vacuum for 5 minutes under a condition of a temperature of 1800 ° C. and a pressure of 30 MPa. Produced.
- the joined body thus produced is hereinafter referred to as joined body Al.
- Example 2 A joined body was produced in the same manner as in Example 1 except that the amount of tungsten powder was 125 g.
- the joined body thus produced is hereinafter referred to as joined body A2.
- Example 3 A joined body was produced in the same manner as in Example 1 except that the amount of tungsten powder was 50 g.
- the joined body thus produced is hereinafter referred to as joined body A3.
- a bonded body was fabricated in the same manner as in Example 1 except that tungsten powder was directly disposed on the CFC layer (SiC was not disposed).
- the joined body thus produced is hereinafter referred to as a joined body Z.
- the tungsten layer is peeled off during polishing and fracture, whereas the joining layer is In the joined bodies A1 to A3 provided, it is recognized that the tungsten layer does not peel off even after polishing and fracture.
- FIG. (A) is explanatory drawing which shows the laminated body before sintering
- the figure (b) is explanatory drawing which shows the joined body after sintering.
- reference numeral 4 is a tungsten layer (W layer)
- reference numeral 5 is a sintered tungsten carbide layer (WC layer)
- reference numeral 6 is a mixed layer of SiC and WC (in addition, around the SiC particles, There is a grain boundary layer of Y 2 O 3 and Al 2 O 3 ( hereinafter sometimes referred to as a SiC and WC mixed layer)
- reference numeral 7 denotes SiC and WC that have been bitten into the CFC layer 3 and sintered. Yes (the amount of bite was 10 ⁇ m).
- the tungsten carbide layer 5 is not entirely composed of tungsten carbide, but also includes metallic tungsten that has not reacted with carbon.
- the bonding principle of the tungsten layer 4 and the CFC layer 3 will be described.
- the laminate is pressurized and heated at an appropriate pressure and temperature, first, a portion of SiC and tungsten powder bite into the gaps between the carbon fiber bundles of the CFC layer 3 due to the pressure before sintering.
- the sintering aid melts such as Y 2 O 3 , Al 2 O 3, and the like, SiC grows in grain.
- tungsten and carbon react to produce tungsten carbide (WC). Since the grown SiC particles and WC particles are further pressed into the gaps and fibers of the CFC by pressurization, a sufficient anchor effect is exhibited.
- the tungsten layer 4 and the SiC / WC mixed layer 6 are formed of the tungsten carbide layer 5 and the Y—Al—Si—O phase generated along with the melting of the sintering aid is WC and SiC. Joined by intertwining. That is, the bonding between the SiC / WC mixed layer 6 and the CFC layer 3 is considered to be mainly due to a physical anchor effect, and the bonding between the tungsten layer 4 and the SiC / WC mixed layer 6 is considered to be due to a chemical bond. . In this way, the interfaces are firmly bonded by physical bonding and chemical bonding.
- the thickness of the tungsten carbide layer 5 of the joined body A1 is 80 ⁇ m.
- the thickness of the tungsten carbide layer 5 becomes too large (200 ⁇ m or more), there is a possibility that it becomes weak against thermal shock or the heat conduction decreases. . Therefore, when the temperature of the joined body is increased using the apparatus (the temperature at this time is about 600 to 1000 ° C. lower than the temperature at the time of sintering), the carbon in the CFC layer 3 diffuses into the tungsten layer 4. It is necessary to prevent it.
- the SiC / WC mixed layer 6 exists between the CFC layer 3 and the tungsten layer 4 as in the above configuration, the carbon in the CFC layer 3 can be prevented from diffusing into the tungsten layer 4.
- the reason why the tungsten layer 4 and the CFC layer 3 are not bonded when the tungsten layer 4 and the CFC layer 3 are directly bonded without providing the SiC / WC mixed layer 6 as in the bonded body Z is not necessarily clear. This is probably because tungsten carbide (WC) particles grow large and the anchor effect is not sufficiently exhibited. Then, it is considered that the tungsten layer 4 was peeled off during polishing / rupture because the tungsten layer 4 and the CFC layer 3 were not firmly bonded. Further, since the CFC layer 3 and the tungsten layer 4 are sufficiently bonded at the bonding interface between the bonded bodies A1 and A2, the bonding interface strength between the CFC layer 3 and the tungsten layer 4 is stronger than the CFC layer 3 itself. Conceivable.
- Example 1 instead of the CFC layer, an isotropic graphite material (IG-12 manufactured by Toyo Tanso Co., Ltd. with an opening porosity of about 16%) having a diameter of 25 mm and a thickness of 4 mm was used. SiC and tungsten powder were applied to both sides of the isotropic graphite material.
- a bonded body was prepared in the same manner as in Example 1 of the first example except that the temperature was set to 1700 ° C. during the sintering.
- the joined body thus produced is hereinafter referred to as a joined body B1.
- an outline of the joined body B ⁇ b> 1 includes an intermediate layer 6 containing W, Si, and C elements formed on both upper and lower surfaces of an isotropic graphite material 8, and a tungsten layer on the outside of each mixed layer 6. 4 is formed.
- Example 2 A joined body was fabricated in the same manner as in Example 1 of the second example except that the temperature during sintering was set to 1800 ° C.
- the joined body thus produced is hereinafter referred to as a joined body B2.
- Example 3 A joined body was produced in the same manner as in Example 1 of the second example except that the temperature during sintering was set at 1900 ° C.
- the joined body thus produced is hereinafter referred to as a joined body B3.
- Example 4 A joined body was fabricated in the same manner as in Example 1 of the second example except that the temperature during sintering was 2000 ° C. The joined body thus produced is hereinafter referred to as a joined body B4.
- FIGS. 6 and 7 are cross-sectional SEM photographs of the joined bodies B1 and B3
- a point ⁇ in the cross-sectional SEM photographs of FIGS. 6 and 7 is a measurement location of an XRD pattern to be described later.
- the intermediate layer containing SiC as a main component disappears, and it can be seen that a wide joining layer containing W and C is formed between the tungsten layer and the isotropic graphite material.
- Si is present in the isotropic graphite material, although it is less than the joined body B1
- the SiC is joined by sintering into the isotropic graphite material and sintering. You can see that Furthermore, C is slightly observed in the tungsten layer, and it can be seen that carbon atoms are diffused in the tungsten layer.
- the joined bodies B1 to B4 were subjected to X-ray diffraction measurement using CuK ⁇ rays (X-ray diffractometer is Ultimate IV manufactured by Rigaku Corporation), and the results are shown in FIG.
- the joined body B1 corresponds to FIG. 8 (a)
- the joined body B2 corresponds to FIG. 8 (b)
- the joined body B3 corresponds to FIG. 8 (c)
- the joined body B4 corresponds to FIG. 8 (d).
- the measurement point in the joined bodies B1 and B3 is a point ⁇ in the cross-sectional SEM photographs of FIGS.
- the measurement was performed at the same location as the joined bodies B1 and B3 (slightly below the tungsten layer).
- FIG. 8A shows that in the bonded body B1, a reaction phase containing W 2 C, WC and a small amount of W 5 Si 3 is formed in the vicinity of the tungsten layer of the bonding layer.
- Si hardly exists between the tungsten layer and the isotropic graphite material in combination with the result of FIG. The cause is presumed to be that Si was volatilized by heating at 1900 ° C. in vacuum.
- Example 3 Regarding the bonded bodies B1 to B4, the bonding strength between the tungsten layer and the isotropic graphite material was measured (EZ-L manufactured by Shimadzu Corporation), and the results are shown in Table 2.
- the experiment was performed as follows. Each joined body was cut with a diamond cutter so as to be 4 mm ⁇ 4 mm ⁇ 6 mm (6 mm in the stacking direction), and a SUS jig was bonded to the upper and lower surfaces of the tungsten layer with an epoxy resin. When this jig was used and pulled by a universal testing machine at 0.5 mm / min so that a tensile load was applied in the stacking direction, the maximum load was shown at the time of breakage. The tensile strength was calculated from the maximum load. Moreover, the fracture
- the tensile strength exceeds 10 MPa, and it is understood that the isotropic graphite material and the tungsten layer are firmly joined. Moreover, since the fracture
- FIG. 9 shows an assumed joining mechanism of the joined bodies B1 and B2
- FIG. 10 shows a presumed joining mechanism of the joined bodies B3 and B4.
- the joined bodies B1 and B2 as shown in FIG. 9, there are two joining layers 9 and 10, the joining layer 9 is joined to the tungsten layer 4, and the joining layer 10 is joined to the isotropic graphite material 8.
- the joined bodies B3 and B4 as shown in FIG. 10, only one joining layer 11 exists, and it is estimated that the joining layer 11 is joined to the tungsten layer and the isotropic graphite material.
- the present invention can be used for a beam damper or aperture having a cooling mechanism such as a heat sink material, an electron beam spraying device, a divertor plate / first wall of a nuclear fusion reactor, an X-ray rotating counter-cathode, a heat radiating member, a heat-resistant member, etc. it can.
- a cooling mechanism such as a heat sink material, an electron beam spraying device, a divertor plate / first wall of a nuclear fusion reactor, an X-ray rotating counter-cathode, a heat radiating member, a heat-resistant member, etc. it can.
- Tungsten powder 2 SiC powder containing sintering aid 3: CFC layer 4: Tungsten layer 5: Sintered tungsten carbide layer 6: Mixed layer of SiC and WC (or W, Si and C elements) Including middle layer) 7: SiC and WC sunk into the CFC layer and sintered 8: Isotropic graphite material 9: Joining layer 10: Joining layer 11: Joining layer
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Abstract
Description
(2)CVD(化学気相成長法)、PVD(物理気相成長法)等により、炭素材料の表面にタングステン層(高融点金属材料層)を形成する方法。
また、(2)記載の方法では、タングステン層の厚みは数百μm程度が限界であり、厚いタングステン層を形成するのが難しいといった課題を有していた。
炭素材料層と、セラミックス及び焼結助剤を含む接合層と、金属層とが焼結法により接合されていれば、炭素材料層と金属層とが強固に接合されるため、炭素材料層と金属層との接合界面において亀裂、剥がれ等が生じるのを抑制できる。また、焼結法を用いて接合するので、金属層の厚みを大きくすることが可能となり、しかも、金属層と炭素材料層との接合を容易に実施することができる。更に、セラミックスを含む接合層の存在により、炭素材料層の炭素が金属層に拡散するのを抑制できるので、接合力が長期間維持されることになる。
接合層の厚みが10μm未満では、炭素材料層と接合層との接合において、SiCが炭素材料層に十分に食い込まない。このため、アンカー効果が十分に発揮されず、接合が不十分となる恐れがある。一方、接合層の厚みが150μmを超えると、線膨張係数の相違等によって熱応力が増大して熱衝撃に弱くなったり、割れが発生し易くなったりする恐れがある。また、熱伝導性が低下する恐れもある。
これにより、十分なアンカー効果が発揮されるからである。
このような構造であれば、タングステンが有する耐プラズマ、高強度、耐発塵、高熱伝導、高電気伝導等の優れた特性と、炭素繊維複合材料が有する軽量、耐熱性、高熱伝導、電気伝導、耐腐食性、高強度、易加工等の特性を発揮することができる。
このように規制すれば、接合体を用いた機器内で不純物が混入するのを抑制することができる。ここで灰分とは、炭素系材料が、燃えつきたあとに残る、炭素以外の無機不純物をいう。
尚、接合体が核融合炉のダイバータ板等に用いられた場合、高温における炭素の金属層への拡散が懸念されるが、上述したSiCの場合、1400℃以下なら長時間晒されても問題ない。但し、1500℃以上になると、短時間では問題ないが、長時間晒されると炭素が拡散する恐れがある。したがって、接合体の温度が1400℃以下となるように、核融合炉の設計を行うのが好ましい。
該製造方法により、上述の接合体を作製することができる。
該製造方法により、上述の接合体を作製することができる。
(1)接合層におけるセラミックスとしては、上記SiC、AlNに限定するものではなく、TiC、ZrC、B4C、TaC、HfC等を用いることできる。
更に、金属層の厚みは、0.1mm以上で任意の厚みのものが形成可能である。ダイバータ板等として用いる場合、1~100mm、好ましくは3~50mm、より好ましくは5~20mmであることが好ましい。尚、厚みの下限をこのように規制するのは、ディスラプションによる溶融やスパッタリングによる損耗を考慮したものである。
(a)除熱能力に優れていること(熱伝導率が高いこと)。
(b)ディスラプション発生時の熱衝撃に対して、十分な強度を有すること。
(c)ディスラプション発生時の電磁力に対して、十分な強度を有すること。
(d)数千回、できれば1~2万回の繰り返し熱負荷に対して、接合層および金属層の除熱能力が変わらないこと。
(e)修復が可能なこと。
(f)放射化する量が少ないこと、あるいは放射化してもその半減期が短いこと。
タングステンよりも熱伝導性に優れた炭素繊維複合材料を用いることにより、(a)の条件を満たすことができる。また、除熱能力が高くなることにより、熱衝撃を緩和でき、(b)の条件をみたすことができる。
炭素材料層として炭素繊維複合材料を用いることにより、(c)の条件を満たすことができる。
本発明の接合体をダイバータ板等に用いた場合、ダイバータ板等の全てがタングステン等の金属により形成されるものではない(即ち、タングステン等の厚みが薄くなって、タングステン等の使用量が減少する)ので、(f)の条件を満たすことができる。また、ダイバータ板等の全てがタングステン等の金属により形成されるものではないので、(e)の条件を満たすこともできる。
(b)放射化に伴う核変換によって、熱的、機械的な特性が変化すると共に、有害な物質に変化したり、α粒子放出による材料の損傷やバブル形成による強度劣化が生じたりする場合がある。
(実施例1)
CFC層(東洋炭素製の炭素繊維複合材料[商品名:CX2002U]であって、直径40mmで厚み10mm、灰分は5ppm)上に、0.25gのSiC(SiCに対する割合が3mass%のY2O3と、6mass%のAl2O3とが焼結助剤として添加されている)と、及び25gタングステン粉末とを順に配置して積層体を作製した。次に、SPS法(放電プラズマ焼結法)にて、温度1800℃で圧力30MPaという条件下で、上記積層体を5分間、真空下でパルス通電焼結することにより焼結し、接合体を作製した。
このようにして作製した接合体を、以下、接合体Alと称する。
タングステン粉末量を125gとしたこと以外は、上記実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体A2と称する。
タングステン粉末量を50gとしたこと以外は、上記実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体A3と称する。
CFC層上にタングステン粉末を直接配置した(SiCを配置しない)こと以外は、上記実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体Zと称する。
上記接合体A1~A3、Zついて、CFC層の厚み、タングステン層の厚み、SiCを主成分とする接合層(中間層)の厚みを調べたので、それらの結果を表1に示す。また、上記接合体A1~A3、Zついて研磨と破断とを行い、研磨、破断の途中でCFC層からタングステン層が剥がれるか否かについて調べたので、その結果を表1に示す。また、研磨・破断後の接合体A1、A2、Zの写真を図1(a)~(c)に示す。尚、図1(a)は接合体A1の写真、図1(b)は接合体A2の写真、図1(c)は接合体Zの写真である。
即ち、SiC、WC混合層6とCFC層3との接合は、主として物理的なアンカー効果によるものと考えられ、タングステン層4とSiC、WC混合層6との接合は化学結合によるものと考えられる。このように、物理的な接合と化学的な接合とによって、各界面間は強固に接合されることになる。
また、接合体A1、A2の接合界面では、CFC層3とタングステン層4とは十分に接合しているので、CFC層3とタングステン層4との接合界面強度はCFC層3自身よりも強くなると考えられる。
(実施例1)
CFC層に替えて、直径25mmで厚み4mmの等方性黒鉛材(東洋炭素株式会社製IG−12。開気孔率約16%)を用い、等方性黒鉛材の両面にSiCとタングステン粉末を配置し、焼結時の温度を1700℃とした以外は、上記第1実施例の実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体B1と称する。
接合体B1の概略は、図5に示すように、等方性黒鉛材8の上下両面にW、Si及びC元素を含む中間層6が形成され、更に各々の混合層6の外側にタングステン層4が形成された構成となっている。
焼結時の温度を1800℃とした以外は、上記第2実施例の実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体B2と称する。
焼結時の温度を1900℃とした以外は、上記第2実施例の実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体B3と称する。
焼結時の温度を2000℃とした以外は、上記第2実施例の実施例1と同様にして接合体を作製した。
このようにして作製した接合体を、以下、接合体B4と称する。
接合体B1、B3の、断面SEM写真を撮り、且つ、同断面SEM写真におけるW、Si及びCの各々の元素の面分析を行ったので、それらの結果を図6及び図7に示す。図6は接合体B1の断面SEM写真等であり、図7は接合体B3の断面SEM写真等である。尚、図6及び図7の断面SEM写真中の点αは、後述するXRDパターンの測定箇所である。
接合体B1~B4について、CuKα線を用いたX線回折測定(X線回折装置は株式会社リガク製Ultima IV)を行ったので、それらの結果を図8に示す。尚、接合体B1は図8(a)に、接合体B2は図8(b)に、接合体B3は図8(c)に、接合体B4は図8(d)に、それぞれ対応している。また、接合体B1、B3における測定点は、図6及び図7の断面SEM写真中の点αである。更に、接合体B2及びB4についても、接合体B1、B3と同様の箇所(タングステン層の若干下方)において測定した。
図8(a)から、接合体B1では、接合層のタングステン層近傍ではW2C、WC及び僅かなW5Si3を含む反応相が形成されていることが判る。また、接合体B3では、図7の結果と相俟って、タングステン層と等方性黒鉛材との間にはSiがほとんど存在していないことが分かる。この原因は、真空中における1900℃での加熱により、Siが揮散してしまったためと推測される。
接合体B1~B4について、タングステン層と等方性黒鉛材との接合強度を測定した(装置は株式会社島津製作所製EZ−L)ので、その結果を表2に示す。実験は、以下のようにして行った。
各々の接合体をダイヤモンドカッターで4mm×4mm×6mm(積層方向が6mm)となるように切断し、タングステン層の上下面にエポキシ樹脂によりSUS製治具を接着した。この治具を用いて万能試験機により、積層方向に引っ張り荷重がかかるように0.5mm/minで引っ張った所、破断時に最大荷重を示した。その最大荷重から引張強さを算出した。また破断箇所を目視にて確認した。
2:焼結助剤を含むSiC粉末
3:CFC層
4:タングステン層
5:焼結された炭化タングステン層
6:SiCとWCとの混合層(又は、W、Si及びC元素を含む中間層)
7:CFC層に食い込んで焼結したSiCとWC
8:等方性黒鉛材
9:接合層
10:接合層
11:接合層
Claims (11)
- 炭素材料層と金属層とが接合された構造の接合体であって、
上記炭素材料層と上記金属層との間には、セラミックスと焼結助剤とを含む接合層が形成されており、上記炭素材料層と上記接合層と上記金属層とは、焼結法により接合されていることを特徴とする接合体。 - 上記金属層における金属の融点が1700℃以上である、請求項1に記載の接合体。
- 上記炭素材料層の炭素材料が、炭素繊維複合材料、等方性黒鉛、異方性を有する黒鉛材料、又は、金属含浸黒鉛材料から成る、請求項1又は2に記載の接合体。
- 上記セラミックスとしてSiCを用いた場合、上記接合層の厚みは10μm以上150μm以下である、請求項1~3の何れか1項に記載の接合体。
- 上記炭素材料層と上記接合層の界面において、上記接合層が炭素材料層の組織内に5μm以上入り込んでいる、請求項1~4の何れか1項に記載の接合体。
- 上記炭素材料層が炭素繊維複合材料から成り、上記金属層がタングステンから成る、請求項1~5の何れか1項に記載の接合体。
- 上記炭素材料層の炭素材料の灰分が20ppm以下である、請求項1~6の何れか1項に記載の接合体。
- 核融合炉のダイバータ板及び/又は第1壁に用いられる、請求項1~7の何れか1項に記載の接合体。
- 炭素材料層の表面に焼結助剤を含むセラミックスと金属とを順に配置して積層体を作製する第1ステップと、
上記積層体を焼結して、上記焼結助剤と上記セラミックスとを含む接合層によって上記炭素材料層と金属層とを接合する第2ステップと、
を有することを特徴とする接合体の製造方法。 - 炭素繊維複合材料層とタングステン層とが接合された構造の接合体であって、
上記炭素繊維複合材料層と上記タングステン層との間には、セラミックスであるSiCと焼結助剤であるY2O3及びAl2O3とを含む接合層が形成されており、上記炭素繊維複合材料層と上記接合層と上記タングステン層とは、焼結法により接合されていることを特徴とする接合体。 - 炭素繊維複合材料層の表面に、SiCから成るセラミックスとY2O3及びAl2O3から成る焼結助剤とから構成される混合物を配置し、この混合物上にタングステンを配置して積層体を作製する第1ステップと、
上記積層体を焼結して、上記焼結助剤と上記セラミックスとを含む接合層によって炭素繊維複合材料層とタングステン層とを接合する第2ステップと、
を有することを特徴とする接合体の製造方法。
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CN106503384B (zh) * | 2016-10-28 | 2019-04-16 | 大连理工大学 | 一种碳纤维复合材料表层切削损伤的综合抑制方法 |
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WO2021100860A1 (ja) * | 2019-11-22 | 2021-05-27 | 三菱マテリアル株式会社 | セラミックス/銅/グラフェン接合体とその製造方法、およびセラミックス/銅/グラフェン接合構造 |
JP7056637B2 (ja) * | 2019-11-26 | 2022-04-19 | 株式会社豊田中央研究所 | 耐熱部材 |
CN114105682B (zh) * | 2021-11-26 | 2022-09-30 | 中钢热能金灿新能源科技(湖州)有限公司 | 一种提高石墨坩埚使用寿命的改进方法和装置 |
CN115974574B (zh) * | 2022-12-28 | 2024-01-09 | 广东工业大学 | 一种碳化硅复合材料和高温合金的连接件及其连接方法与应用 |
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CN104884411A (zh) | 2015-09-02 |
CN104884411B (zh) | 2017-03-22 |
JPWO2014119803A1 (ja) | 2017-01-26 |
US20150344374A1 (en) | 2015-12-03 |
JP6380756B2 (ja) | 2018-09-05 |
EP2952496B1 (en) | 2024-04-10 |
US11286210B2 (en) | 2022-03-29 |
CA2897496A1 (en) | 2014-08-07 |
KR20150115828A (ko) | 2015-10-14 |
EP2952496A1 (en) | 2015-12-09 |
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EP2952496A4 (en) | 2016-10-19 |
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