WO2014082152A1 - Procédé de diffusion de dopants dans des plaques de silicium pour la fabrication de cellules solaires - Google Patents

Procédé de diffusion de dopants dans des plaques de silicium pour la fabrication de cellules solaires Download PDF

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Publication number
WO2014082152A1
WO2014082152A1 PCT/BR2013/000523 BR2013000523W WO2014082152A1 WO 2014082152 A1 WO2014082152 A1 WO 2014082152A1 BR 2013000523 W BR2013000523 W BR 2013000523W WO 2014082152 A1 WO2014082152 A1 WO 2014082152A1
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WO
WIPO (PCT)
Prior art keywords
dopant
diffusion
process according
type dopant
solar cells
Prior art date
Application number
PCT/BR2013/000523
Other languages
English (en)
Portuguese (pt)
Inventor
Izete ZANESCO
Adriano MOEHLECKE
Original Assignee
União Brasileira De Educação E Assistência, Mantenedora Da Pucrs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by União Brasileira De Educação E Assistência, Mantenedora Da Pucrs filed Critical União Brasileira De Educação E Assistência, Mantenedora Da Pucrs
Publication of WO2014082152A1 publication Critical patent/WO2014082152A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention is directed to a process for manufacturing solar cells by depositing and diffusing p-type dopant on one side of a silicon slide and another n-type dopant on the opposite side, using a silicate protective layer. p-doped face of the diffusion of the other n-type dopant. More specifically, the proposed process aims to use boron as p-type dopant and phosphorus as n-type dopant. This avoids the use of the specific oxidation, resin deposition and oxide attack processes required in conventional processes to protect one side of the diffusion being carried out on the other side of the silicon blade.
  • the present invention is in the field of electrical, energy and materials engineering.
  • Solar cells or photovoltaic cells are devices that directly convert solar energy into electrical energy. They do not generate waste during the conversion process, producing clean electricity.
  • Commercially the dominant technology is crystalline silicon cells, which are processed into silicon sheets. In this area, technological development is focused on increasing the efficiency of solar cells or reducing manufacturing costs. The present invention is focused on a solar cell manufacturing process with reduced production cost.
  • US 8,039,734 describes a method of manufacturing solar cell and solar cell pastes comprising these pastes.
  • the pastes comprise an initial metal component containing silver (Ag), a second component including zinc (Zn) and at least one additional component which may be selected from the group comprising boron, phosphorus, among others.
  • US 7,776,722 describes solar cell optimized emitting structures and methods of emitter formation comprising the steps of: depositing a dielectric layer on a substrate; transfer a pattern to the dielectric layer; implant an initial doping material; optionally implanting a second doping material; heat the substrate to redistribute the dopants and optionally form the metal mesh over the substrate.
  • the doping material may comprise arsenic (As), boron (B) or phosphorus (P).
  • the present invention is directed to a process for manufacturing solar cells by depositing and diffusing p-type dopant on one side of a silicon slide and another n-type dopant on the opposite side, using a silicate protective layer. p-type doping face of the other dopant of type n. More specifically, the proposed process aims at the use of boron as d-type d phosphorus and as n-type dopant.
  • the first dopant comprises a p-type dopant.
  • the p-type dopant comprises the boron element.
  • the second dopant comprises an n.
  • the n-type dopant comprises the phosphorus element.
  • the first dopant deposition step comprises spin-on, with evaporation of solvents in the temperature range of 100 ° C to 400 ° C.
  • the first dopant diffusion step comprises performing in a quartz tube furnace.
  • said furnace diffusion comprises being carried out in the temperature range of 700 ° C to 100 ° C.
  • said furnace diffusion comprises being performed between 5 min and 180 min.
  • the dilute hydrofluoric acid comprises a concentration in the range of 1% to 10%.
  • the silicate attack comprises the use of hydrofluoric acid with a concentration greater than 30%.
  • the process for manufacturing dopant-diffusing solar cells on silicon slides further comprises the steps of:
  • Figure 1A shows the steps of the silicon solar cell manufacturing process of the present invention.
  • Figure 1B presents the steps of the process of manufacturing silicon solar cells with n + pp + and or p + nn + conventional structure 1.
  • Figure 1C shows the steps of the manufacturing process of silicon solar cells with n + pp + and or p + nn + conventional structure 2.
  • the present invention provides a novel method of producing solar cells from silicon slides by diffusing boron (or other p-type dopant) and phosphorus (or other n-type dopant) into the silicon slide without using silicon oxide layer and processes using photosensitive resin.
  • silicon oxide is grown Thermally on both sides of a silicon blade, resin is deposited on one side and the oxide layer on the other side is attacked. In this way, one side will be protected by an oxide layer. In the face without oxide, dopant diffusion occurs in the silicon blade and in the face with oxide it is avoided.
  • boron or other p-type dopant
  • a silicate layer is difficult to attack with hydrofluoric acid diluted in deionized water.
  • the slide is submerged in dilute hydrofluoric acid and the S1O2 layer is removed only on the non-boron-doped face, leaving the borosilicate layer, which protects the surface from phosphorus diffusion. .
  • steps of the manufacturing process of boron doping solar cells (or other p-type dopant) are avoided, reducing the production cost.
  • the present invention is understood as solar cells, devices that convert solar energy into electrical energy through the photovoltaic effect.
  • n + pp + frame solar cell technology is based on the formation of the p + region with aluminum paste and conveyor belt diffusion.
  • Another type of dopant to form the p + region is boron, which produces better quality p + regions when compared to aluminum.
  • boron is used as p + dopant because this region remains transparent to solar radiation after the diffusion process, a fact that does not occur when aluminum is used as a dopant.
  • boron diffusion (or other p-type dopant) is performed by deposition of spin-on boron dopant liquid, typical of the semiconductor device industry, on one side of the silicon slide and diffusion is performed on oven with quartz tube.
  • a boron-containing liquid called a doping liquid
  • a doping liquid is dripped onto the silicon blade and rotated with angular velocities from 1000 rpm to 5000 rpm, causing the doping liquid to spread evenly over the blade surface.
  • This process is called spin-on and the equipment where the process is performed is called spinner.
  • the slide is removed from this equipment and placed to evaporate the solvents at a temperature of 100 ° C to 400 ° C for periods of time from 02 min to 40 min. In this process, the solvents are evaporated and the dopant boron remains on the silicon slide.
  • the slides are introduced in a quartz tube electric oven at temperatures of 700 ° C to 1,100 ° C, with boron diffusion occurring on the silicon slides only on the face where it was deposited.
  • oxidation, resin deposition and oxide attack are performed only on the face on which phosphorus will be diffused.
  • the resin should be removed with acetone, isopropanol (optional) and deionized water.
  • Phosphorus diffusion is performed in a quartz tube and after extraction of phosphorosilicates and oxides, the doping liquid with boron is deposited by spin-on and the boron is diffused.
  • the proposed process does not use photosensitive resin, buffer hydrofluoric acid and acetone, which reduces the production cost.
  • photosensitive resin buffer hydrofluoric acid and acetone
  • fewer process steps are required, contributing to lower manufacturing costs by reducing hours of human resources and consumption of electricity, high purity gases and chemicals.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un nouveau procédé pour la production de cellules solaires à partir de plaques de silicium, faisant intervenir la diffusion de bore (ou d'un autre dopant de type p) et de phosphore (ou d'un autre dopant de type n) dans ces plaques, avec utilisation d'une couche de silicate pour protéger la face avec le bore (ou un autre dopant de type p) contre la diffusion de phosphore (ou d'un autre dopant de type n). On évite l'utilisation d'une étape thermique de croissance de couche d'oxyde de silicium et l'utilisation de résine pour protéger l'une des faces pendant l'attaque d'oxydes avec de l'acide fluorhydrique. Ainsi, l'invention présente des avantages, tels que l'absence d'utilisation de résine photosensible, d'acide fluorhydrique tampon et d'acétone, ce qui permet de réduire le nombre d'étapes, au minimum quatre, dans des procédés de fabrication de cellules solaires. Cela permet de diminuer le nombre d'heures en termes de ressources humaines et de consommation d'énergie électrique, de gaz de haute pureté et de produits chimiques, avec réduction du coût de production par comparaison avec les procédés classiques.
PCT/BR2013/000523 2012-11-30 2013-11-28 Procédé de diffusion de dopants dans des plaques de silicium pour la fabrication de cellules solaires WO2014082152A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BRBR102012030606-9 2012-11-30
BR102012030606-9A BR102012030606B1 (pt) 2012-11-30 2012-11-30 processo de difusão de dopantes em lâminas de silício para a fabricação de células solares

Publications (1)

Publication Number Publication Date
WO2014082152A1 true WO2014082152A1 (fr) 2014-06-05

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BR (1) BR102012030606B1 (fr)
WO (1) WO2014082152A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111341649A (zh) * 2020-02-03 2020-06-26 深圳市拉普拉斯能源技术有限公司 一种n型太阳能电池硼扩散方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR102018008576A2 (pt) * 2018-04-27 2019-11-12 Eletrosul Centrais Eletricas S/A processo de difusão de dopante tipo p e tipo n em lâminas de silício na mesma etapa térmica

Citations (10)

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US790574A (en) * 1904-09-09 1905-05-23 Whitlock Printing Press Mfg Company Flat-bed cylinder printing-press.
US4078945A (en) * 1976-05-03 1978-03-14 Mobil Tyco Solar Energy Corporation Anti-reflective coating for silicon solar cells
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US5899704A (en) * 1995-03-10 1999-05-04 Siemens Aolar Gmbh Solar cell with a back-surface field method of production
EP1968123A2 (fr) * 2007-02-28 2008-09-10 Centrotherm Photovoltaics Technology GmbH Procédé destiné à la fabrication de cellules solaires au silicium
US20100032012A1 (en) * 2006-12-01 2010-02-11 Takayuki Isaka Solar cell and method of manufacturing the same
US20110100443A1 (en) * 2009-10-30 2011-05-05 Clevenger Lawrence A Photovoltaic solar cell device manufacture
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WO2012108766A2 (fr) * 2011-02-08 2012-08-16 Tsc Solar B.V. Procédé de fabrication d'une cellule solaire et cellule solaire

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US790574A (en) * 1904-09-09 1905-05-23 Whitlock Printing Press Mfg Company Flat-bed cylinder printing-press.
US4078945A (en) * 1976-05-03 1978-03-14 Mobil Tyco Solar Energy Corporation Anti-reflective coating for silicon solar cells
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US5899704A (en) * 1995-03-10 1999-05-04 Siemens Aolar Gmbh Solar cell with a back-surface field method of production
US20100032012A1 (en) * 2006-12-01 2010-02-11 Takayuki Isaka Solar cell and method of manufacturing the same
EP1968123A2 (fr) * 2007-02-28 2008-09-10 Centrotherm Photovoltaics Technology GmbH Procédé destiné à la fabrication de cellules solaires au silicium
US20110100443A1 (en) * 2009-10-30 2011-05-05 Clevenger Lawrence A Photovoltaic solar cell device manufacture
US20110174369A1 (en) * 2010-01-19 2011-07-21 International Business Machines Corporation Efficiency in Antireflective Coating Layers for Solar Cells
US20120171805A1 (en) * 2010-12-29 2012-07-05 Au Optronics Corporation Method of fabricating a solar cell
WO2012108766A2 (fr) * 2011-02-08 2012-08-16 Tsc Solar B.V. Procédé de fabrication d'une cellule solaire et cellule solaire

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BOWDEN, S ET AL.: "Rear passivation of thin multicrystalline silicon solar cells", OPTO- ELECTRONICS REVIEW, vol. 8, 2000, pages 307 - 310 *
LEE, JY ET AL.: "Boron Back Surface Field Using Spin-On Dopants by Rapid Thermal Processing", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 44, no. 6, 6 June 2004 (2004-06-06), pages 1581 - 1586 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111341649A (zh) * 2020-02-03 2020-06-26 深圳市拉普拉斯能源技术有限公司 一种n型太阳能电池硼扩散方法
CN111341649B (zh) * 2020-02-03 2023-12-12 拉普拉斯新能源科技股份有限公司 一种n型太阳能电池硼扩散方法

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BR102012030606A2 (pt) 2014-09-09
BR102012030606B1 (pt) 2021-02-09

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