WO2014065084A1 - Élément électroluminescent organique et dispositif d'éclairage l'utilisant - Google Patents

Élément électroluminescent organique et dispositif d'éclairage l'utilisant Download PDF

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Publication number
WO2014065084A1
WO2014065084A1 PCT/JP2013/076639 JP2013076639W WO2014065084A1 WO 2014065084 A1 WO2014065084 A1 WO 2014065084A1 JP 2013076639 W JP2013076639 W JP 2013076639W WO 2014065084 A1 WO2014065084 A1 WO 2014065084A1
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layer
transparent electrode
refractive index
electroluminescent element
optical buffer
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PCT/JP2013/076639
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English (en)
Japanese (ja)
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昌宏 今田
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コニカミノルタ株式会社
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Priority to JP2014543210A priority Critical patent/JP6287848B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means

Definitions

  • the present invention relates to an electroluminescent element and an illumination device using the electroluminescent element.
  • the electroluminescent element is composed of an electroluminescent layer sandwiched between a planar cathode and an anode.
  • the anode is often a transparent electrode
  • the cathode is often a metal light reflecting electrode.
  • one of them is composed of a metal light reflecting electrode, light is extracted from the anode side of the transparent electrode and used as a single-sided light emitting device.
  • Substrate loss means the loss of light that cannot be extracted to the light extraction side due to total reflection at the interface between the transparent substrate and air, and usually has a loss of about 20%.
  • the waveguide loss means a loss of light that is totally reflected at the interface between the transparent electrode and the transparent substrate to generate a waveguide mode and is confined in the organic light emitting layer and the transparent electrode, and is usually about 20 to 25%. There is a loss.
  • Plasmon loss is a type of guided mode, where light enters a metal electrode and interacts with free electrons in the metal electrode, generating a plasmon mode and reducing the loss of light confined near the surface of the metal electrode. Meaning, there is usually a loss of about 30-40%.
  • Patent Document 1 discloses an organic light emitting device in which light use efficiency is improved by reducing waveguide loss and plasmon loss.
  • Patent Document 1 the portion that is normally a metal electrode is configured as a transparent electrode + optical buffer layer + reflecting mirror, and the refractive index of the optical buffer layer is made higher than that of the other layers to reduce plasmon loss.
  • a structure that reduces and improves light utilization efficiency is disclosed. However, further improvement in light utilization efficiency has been desired.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide an electroluminescent element and an illuminating device using the electroluminescent element that can further improve the light use efficiency.
  • the optical buffer layer has a refractive index different between the light reflecting layer side and the second transparent electrode layer side, and the refractive index of the light reflecting layer side is the refractive index of the second transparent electrode layer side. Greater than rate.
  • the lighting device according to the present invention has the above-described electroluminescent element.
  • the present invention it is possible to further improve the light use efficiency in the electroluminescent element and the illumination device using the electroluminescent element.
  • FIG. 3 is a plan view of the organic electroluminescent element in the first embodiment.
  • FIG. 2 is a cross-sectional view of the organic electroluminescent element according to Embodiment 1 taken along line II-II in FIG. It is a figure which shows the material, film thickness, and refractive index of each layer of the organic electroluminescent element shown in FIG.
  • FIG. 6 is a diagram showing the result of calculating the plasmon mode light intensity distribution of the organic electroluminescent element in the first embodiment. It is the figure which expanded the organic light emitting layer vicinity of FIG. It is sectional drawing which shows the structure of the organic electroluminescent element in the background art 1.
  • FIG. 1 is a plan view of the organic electroluminescent element in the first embodiment.
  • FIG. 2 is a cross-sectional view of the organic electroluminescent element according to Embodiment 1 taken along line II-II in FIG. It is a figure which shows the material, film thickness, and refractive index of each layer of the organic electrolumin
  • FIG. 5 is a cross-sectional view showing the structure of an organic electroluminescent element in a second embodiment.
  • FIG. 6 is a cross-sectional view showing a structure of an organic electroluminescent element in a fourth embodiment.
  • FIG. 6 is a cross-sectional view showing the structure of an organic electroluminescent element in a fifth embodiment. It is a figure which shows the material, film thickness, and refractive index of each layer of the organic electroluminescent element shown in FIG. It is a figure which shows the result of having calculated the light intensity distribution of the plasmon mode of the organic electroluminescent element in Embodiment 5.
  • FIG. It is sectional drawing which shows the structure of the organic electroluminescent element in Embodiment 6.
  • FIG. 10 is a diagram illustrating a schematic configuration of a lighting device in a seventh embodiment.
  • FIG. 20 is a diagram illustrating a schematic configuration of a lighting device according to an eighth embodiment.
  • FIG. 1 is a plan view of the organic electroluminescent element 1 in the present embodiment
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1 of the organic electroluminescent element 1 in the present embodiment
  • FIG. 2 is a diagram showing the material, film thickness, and refractive index of each layer of the organic electroluminescent device 1 shown in FIG. 2
  • FIG. 4 is a diagram showing the result of calculating the plasmon mode light intensity distribution of the organic electroluminescent device 1
  • FIG. FIG. 5 is an enlarged view of the vicinity of the organic light emitting layer in FIG. 4. Note that the cross-sectional views in the following embodiments are cross-sections corresponding to the view taken along the line II-II in FIG.
  • the organic electroluminescent element 1 in the present embodiment includes a transparent substrate 10, a first transparent electrode layer 11 provided on one side of the transparent substrate 10, and a first transparent electrode layer 11.
  • the organic electroluminescent layer 20 provided on the opposite side to the side on which the transparent substrate 10 is provided, and the second transparent electrode layer provided on the opposite side of the organic electroluminescent layer 20 from the side on which the first transparent electrode layer 11 is provided. 15.
  • the organic electroluminescent layer 20 is sandwiched between the first transparent electrode layer 11 and the second transparent electrode layer 15.
  • the organic electroluminescent layer 20 includes a hole transport layer 12 located on the first transparent electrode layer 11 side, an electron transport layer 14 located on the second transparent electrode layer 15 side, and a hole transport.
  • An organic light emitting layer 13 sandwiched between the layer 12 and the electron transport layer 14 is included.
  • An optical buffer layer 16 is provided on the side of the second transparent electrode layer 15 opposite to the side on which the organic electroluminescent layer 20 is provided, and the side of the optical buffer layer 16 opposite to the side on which the second transparent electrode layer 15 is provided. Is provided with a light reflecting layer 30.
  • the refractive index of the optical buffer layer 16 is larger on the light reflecting layer 30 side than on the second transparent electrode layer 15 side.
  • the optical buffer layer 16 includes a first optical buffer layer 16a provided on the second transparent electrode layer 15 side, and a second optical buffer layer 16b provided on the light reflecting layer 30 side, and the second optical buffer layer 16b is provided.
  • the refractive index n2 of the buffer layer 16b is larger than the refractive index n1 of the first optical buffer layer 16a (n2> n1).
  • each layer constituting the organic electroluminescent element 1 having the above-described configuration will be described.
  • Glass is used for the transparent substrate 10.
  • the refractive index is 1.50.
  • 150 nm-thick ITO mixture of indium oxide and tin oxide
  • the refractive index is 1.83 + 0.007i.
  • ⁇ -NPD having a thickness of 40 nm is used.
  • ⁇ -NPD is 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl.
  • the refractive index is 1.78.
  • Alq3 having a film thickness of 30 nm is used.
  • Alq3 is tris (8-quinolinolato) aluminum.
  • the refractive index is 1.72 + 0.005i.
  • Alq3 having a film thickness of 40 nm is used.
  • the refractive index is 1.72 + 0.005i.
  • Ag having a thickness of 9 nm is used.
  • the refractive index is 0.128 + 3.17i.
  • the first optical buffer layer 16a Ta 2 O 5 having a thickness of 50 nm is used as a dielectric film.
  • the refractive index is 1.81.
  • the second optical buffer layer 16b the following three types of films were used in order to cause a refractive index difference with the first optical buffer layer 16a.
  • Ta 2 O 5 having a refractive index of 1.81, HfO 2 having a refractive index of 1.93, and Si 3 N 4 having a refractive index of 2.03 were used.
  • the refractive index difference ( ⁇ n) with Ta 2 O 5 is 0.00
  • the refractive index difference ( ⁇ n) with HfO 2 is 0.12
  • the refractive index difference ( ⁇ n) with Si 3 N 4 is 0.22. .
  • the light reflecting layer 30 is made of Ag having a thickness of 100 nm.
  • the refractive index is 0.128 + 3.17i.
  • 530 nm was used as the emission wavelength.
  • the calculation results in the other embodiments described below are the same, and the wavelength is used.
  • the horizontal axis indicates the relative distance based on the back surface of the organic electroluminescent element 1, and the left vertical axis indicates the normalized light intensity.
  • the refractive index difference ( ⁇ n) between the first optical buffer layer 16a and the second optical buffer layer 16b is changed from 0.00 to 0.22 using the above-described materials. It is a calculation result of the light intensity distribution of the plasmon mode.
  • the refractive index n2 of the second optical buffer layer 16b is larger than the refractive index n1 of the first optical buffer layer 16a.
  • the refractive index n1 of the first optical buffer layer 16a is fixed at 1.81
  • the refractive index n2 of the second optical buffer layer 16b is 2.03, 1.93, and 1.81, using the above-described film materials. Changed.
  • the plasmon mode is generated at the interface between the electron transport layer 14 and the second transparent electrode layer 15 which is the metal surface, so that the light intensity distribution thereof is the second transparent which is the metal electrode surface.
  • the electrode layer 15 is strongest.
  • the plasmon mode distributed in the second transparent electrode layer 15 constituting the organic electroluminescent layer 20 is decreased, and the intensity of the plasmon mode distributed in the organic light emitting layer 13 is decreased.
  • the ratio of the light generated in the organic light emitting layer 13 to be coupled to the plasmon mode is reduced, so that the plasmon loss can be reduced.
  • the use efficiency of light in the organic electroluminescent element 1 can be improved.
  • the material used for each layer of the organic electroluminescent element 1 is not limited to the above, and the following materials can be used.
  • the transparent substrate 10 can be made of a transparent material suitable for the emission wavelength of the organic electroluminescent element 1, such as quartz, sapphire, and plastic, in addition to glass. If a flexible material such as very thin glass or resin film is used, the light source can be curved.
  • the organic electroluminescent device 1 shown in FIGS. 1 and 2 has a bottom emission configuration in which each layer is stacked on the transparent substrate 10 and light is extracted from the transparent substrate 10 side.
  • the light reflecting layer 30 is a substrate for stacking.
  • a top emission configuration in which light is extracted from the side opposite to the substrate.
  • ITO mixed indium oxide and tin oxide
  • IZO mixed indium oxide and zinc oxide
  • IGZO indium (In) Oxidize gallium (Ga) and zinc (Zn) to give crystallinity
  • conductive metal oxide material transparent oxide semiconductor
  • ZnO transparent oxide semiconductor
  • SnO 2 transparent oxide semiconductor
  • CuI thin translucent Metal thin film
  • a conductive resin PEDOT / PSS, etc.
  • a film in which conductive wires and conductive fine particles such as carbon nanotubes, metal nanowires such as Ag, and nanoparticles of Ag and Cu are dispersed in the conductive resin is used. It may be used.
  • a metal thin film may be used for one of the first transparent electrode layer 11 and the second transparent electrode layer 15, and a film made of a conductive metal oxide may be used for either of the other.
  • the second transparent electrode layer 15 on the cathode side has a metal thin film having a work function suitable for electron injection
  • the first transparent electrode layer 11 on the anode side has a work function suitable for hole injection. It is preferable to use a conductive metal oxide.
  • ITO for the first transparent electrode layer 11 and a silver thin film for the second transparent electrode layer 15.
  • ITO has the advantage of high light transmittance
  • the metal thin film has the advantage that it can be formed at a low temperature.
  • a film thickness of several nanometers to several tens of nanometers is suitable for increasing the light transmittance.
  • the conductive metal oxide has a thickness of 10 nm to 200 nm suitable for reducing the surface resistance.
  • the hole transport layer 12 As the hole transport layer 12, the organic light emitting layer 13, and the electron transport layer 14 constituting the organic electroluminescent layer 20, various materials generally used in organic EL elements can be used.
  • an electron injection layer, a hole injection layer, a carrier block layer, and the like may be combined.
  • the optical buffer layer 16 in addition to various organic materials that are transparent at the emission wavelength of the organic EL, TiO 2 , SiO 2 , ZnO, Al 2 O 3 , Ta 2 O 5 , HfO 2 , ZrO 2 , KTaO 3 , MgO
  • a material such as Si 3 N 4 , AlN, GaN, SiC, or Y 2 O 3 can be used.
  • a material whose refractive index is adjusted by mixing fine particles having a diameter of 100 nm or less, such as TiO 2 and ZrO 2 , with an organic resin may be used.
  • a metal material such as Ag, Al, Au, Sn, Ti, Ni, Na, Ca, Zn, an alloy containing any of them can be used, and light may be reflected.
  • a dielectric mirror in which dielectric films such as TiO 2 / SiO 2 are laminated in multiple layers may be used.
  • the organic electroluminescent element 1 shown in FIG. 2 has a bottom emission configuration, but may have a top emission configuration in which the layer configuration is reversed. Furthermore, the cathode and the anode may be reversed. That is, in order from the substrate side, substrate 10 / first transparent electrode layer 11 (cathode) / electron transport layer 14 / organic light emitting layer 13 / hole transport layer 12 / second transparent electrode layer 15 (anode) / first optical buffer.
  • the layer 16a / second optical buffer layer 16b / light reflecting layer 30 may be arranged in this order.
  • FIG. 6 is a cross-sectional view showing the structure of the organic electroluminescent element 2 in the background art 1
  • FIG. 7 is a diagram showing the material, film thickness, and refractive index of each layer of the organic electroluminescent element 2 shown in FIG. 6, and FIG. It is a figure which shows the result of having calculated the light intensity distribution of the plasmon mode of the organic electroluminescent element in the background art 1.
  • FIG. 9 is a cross-sectional view showing the structure of the organic electroluminescent element 3 in Background Art 2
  • FIG. 10 is a diagram showing the material, film thickness, and refractive index of each layer of the organic electroluminescent element 3 shown in FIG. It is a figure which shows the result of having calculated the light intensity distribution of the plasmon mode of the organic electroluminescent element in the background art 2.
  • FIG. 9 is a cross-sectional view showing the structure of the organic electroluminescent element 3 in Background Art 2
  • FIG. 10 is a diagram showing the material, film thickness, and refractive
  • the organic electroluminescent element 2 in the background art 1 includes a transparent substrate 10, a first transparent electrode layer 11 provided on one surface side of the transparent substrate 10, and a transparent substrate of the first transparent electrode layer 11. 10 is provided with an organic electroluminescent layer 20 provided on the opposite side to the side on which 10 is provided, and a metal electrode layer 15A provided on the opposite side of the organic electroluminescent layer 20 from the side on which the first transparent electrode layer 11 is provided. The organic electroluminescent layer 20 is sandwiched between the first transparent electrode layer 11 and the metal electrode layer 15A.
  • the organic electroluminescent layer 20 includes a hole transport layer 12 located on the first transparent electrode layer 11 side, an electron transport layer 14 located on the metal electrode layer 15A side, a hole transport layer 12 and an electron transport layer 14. And an organic light emitting layer 13 sandwiched therebetween.
  • the material, film thickness, and refractive index of each layer constituting the organic electroluminescent element 2 having the above-described configuration will be described.
  • Glass is used for the transparent substrate 10.
  • the refractive index is 1.50.
  • 150 nm-thick ITO mixture of indium oxide and tin oxide
  • the refractive index is 1.83 + 0.007i.
  • the hole transport layer 12 For the hole transport layer 12, ⁇ -NPD having a thickness of 40 nm is used. The refractive index is 1.78.
  • Alq3 having a film thickness of 30 nm is used.
  • Alq3 having a film thickness of 40 nm is used.
  • the refractive index is 1.72 + 0.005i.
  • the metal electrode layer 15A as the cathode Ag with a film thickness of 100 nm is used.
  • the refractive index is 0.128 + 3.17i.
  • the buffer layer is not provided, and it can be considered that the metal electrode layer 15A also serves as the light reflecting layer.
  • FIG. 8 shows the calculation result of the light intensity distribution of the plasmon mode in the organic electroluminescent element 2 having the above configuration.
  • the horizontal axis indicates the relative distance based on the back surface of the organic electroluminescent element 2
  • the left vertical axis indicates the normalized light intensity.
  • the plasmon mode has the strongest intensity on the metal surface, and decreases exponentially with increasing distance from the metal surface, but the organic luminescent layer 13 has a strong plasmon mode of about 0.4 to 0.5. Is present. A part of the light emitted from the organic light emitting layer 13 is coupled to the plasmon mode, and is eventually lost as a plasmon loss. Therefore, in order to reduce the plasmon loss, it is important to reduce the light intensity of the plasmon mode existing in the organic light emitting layer 13 as much as possible.
  • the organic electroluminescent element 3 in the background art 2 includes a transparent substrate 10, a first transparent electrode layer 11 provided on one surface side of the transparent substrate 10, and a transparent substrate of the first transparent electrode layer 11.
  • the organic electroluminescent layer 20 is sandwiched between the first transparent electrode layer 11 and the second transparent electrode layer 15.
  • the organic electroluminescent layer 20 includes a hole transport layer 12 located on the first transparent electrode layer 11 side, an electron transport layer 14 located on the second transparent electrode layer 15 side, a hole transport layer 12 and an electron transport layer 14. And an organic light emitting layer 13 sandwiched between.
  • An optical buffer layer 16 is provided on the side of the second transparent electrode layer 15 opposite to the side on which the organic electroluminescent layer 20 is provided, and the side of the optical buffer layer 16 opposite to the side on which the second transparent electrode layer 15 is provided. Is provided with a light reflecting layer 30.
  • the material, film thickness, and refractive index of each layer constituting the organic electroluminescent element 3 having the above configuration will be described.
  • Glass is used for the transparent substrate 10.
  • the refractive index is 1.50.
  • For the first transparent electrode layer 11 as the anode 150 nm-thick ITO (mixture of indium oxide and tin oxide) is used.
  • the refractive index is 1.83 + 0.007i.
  • the hole transport layer 12 For the hole transport layer 12, ⁇ -NPD having a film thickness of 40 nm is used. The refractive index is 1.78.
  • Alq3 having a film thickness of 30 nm is used.
  • Alq3 having a film thickness of 40 nm is used.
  • the refractive index is 1.72 + 0.005i.
  • Ag with a film thickness of 100 nm is used.
  • the refractive index is 0.128 + 3.17i.
  • the first optical buffer layer 16 uses Ta 2 O 5 having a thickness of 100 nm as a dielectric film.
  • the refractive index is 1.81.
  • the light reflecting layer 30 is made of Ag having a thickness of 100 nm.
  • the refractive index is 0.128 + 3.17i.
  • FIG. 11 shows the result of calculating the light intensity distribution of the plasmon mode in the organic electroluminescent element 3 having the above configuration.
  • the horizontal axis indicates the relative distance based on the back surface of the organic electroluminescent element 3, and the left vertical axis indicates the normalized light intensity.
  • the second transparent electrode layer 15 is a thin film metal electrode, and the side on which the organic electroluminescent layer 20 is provided of the second transparent electrode layer 15.
  • the optical buffer layer 16 reffractive index 1.81
  • the light reflecting layer 30 By providing the optical buffer layer 16 (refractive index 1.81) and the light reflecting layer 30 on the opposite side, the distance between the organic electroluminescent layer 20 and the light reflecting layer 30 is as shown in FIG. It is possible to be farther than in the case of 2.
  • the intensity of the plasmon mode distributed in the organic light emitting layer 13 can be reduced to 0.2 or less.
  • the optical buffer layer 16 has different refractive indexes on the light reflection layer 30 side and the second transparent electrode layer 15 side, and the refraction on the light reflection layer 30 side.
  • the refractive index is larger than the refractive index on the second transparent electrode layer 15 side.
  • the optical buffer layer 16 includes a first optical buffer layer 16a provided on the second transparent electrode layer 15 side, and a second optical buffer layer 16b provided on the light reflecting layer 30 side, and the second optical buffer layer 16b is provided.
  • a configuration is adopted in which the refractive index n2 of the buffer layer 16b is larger than the refractive index n1 of the first optical buffer layer 16a.
  • the intensity of the plasmon mode distributed in the organic light emitting layer 13 is 0.15 or less when the refractive index difference ( ⁇ n) is 0.12. In the case where the refractive index difference ( ⁇ n) is 0.22, the intensity of the plasmon mode distributed in the organic light emitting layer 13 is reduced to 0.125 or less.
  • the refractive index difference (n1) between the refractive index n1 of the first optical buffer layer 16a and the refractive index n2 of the second optical buffer layer 16b is made larger than 0.00, the ratio of the light generated in the organic light emitting layer 13 to be coupled to the plasmon mode is reduced, and the plasmon loss can be reduced. As a result, it is possible to improve the light use efficiency in the organic electroluminescent element 1.
  • FIG. 12 is a cross-sectional view showing the structure of the organic electroluminescent element 1A in the present embodiment
  • FIG. 13 is a diagram showing the result of calculating the plasmon mode light intensity distribution of the organic electroluminescent element 1A.
  • the optical buffer layer 16 has different refractive indexes on the light reflecting layer 30 side and the second transparent electrode layer 15 side, and the refractive index on the light reflecting layer 30 side. This has a configuration in which the refractive index is larger than the refractive index on the second transparent electrode layer 15 side.
  • the optical buffer layer 16 includes a first optical buffer layer 16a provided on the second transparent electrode layer 15 side, and a second optical buffer layer 16b provided on the light reflecting layer 30 side, and the second optical buffer layer 16b is provided.
  • a configuration in which the refractive index n2 of the buffer layer 16b is larger than the refractive index n1 of the first optical buffer layer 16a is adopted.
  • the optical buffer layer 16A has a single layer structure.
  • light is reflected from the second transparent electrode layer 15 side so that the refractive index of the optical buffer layer 16 is larger on the light reflecting layer 30 side than on the second transparent electrode layer 15 side.
  • a structure that changes gradually toward the layer 30 side is adopted.
  • Other configurations are the same as those of the organic electroluminescent element 1 in the first embodiment.
  • the refractive index between them is n1.
  • the plasmon mode normalized light intensity distribution was calculated for the case of gradually changing from n to n2. Specifically, the refractive index of the optical buffer layer 16A is gradually changed from 1.82 to 1.93 and 2.03 from the second transparent electrode layer 15 side toward the light reflecting layer 30 side. I let you.
  • the optical buffer layer 16A is made of, for example, a material in which a material 1 having a refractive index n1 and a material 2 having a refractive index n2 are mixed, and the ratio of the material 1 and the material 2 is the second transparent electrode layer 15.
  • a mixing method that gradually changes from the side toward the light reflecting layer 30 side can be considered.
  • a conductive material may be used for the optical buffer layer 16.
  • the second transparent electrode 15, the optical buffer layer 16 (the first optical buffer layer 16 a and the second optical buffer layer 16 b), and the light reflecting layer 30 as a whole contribute to conduction.
  • the resistance value of the light emitting element can be reduced.
  • FIG. 14 shows a cross-sectional structure of organic electroluminescent element 1B in the fourth embodiment.
  • the optical buffer layer 16 (at least one of the first optical buffer layer 16a and the second optical buffer layer 16b) has fine particles 16c having a light scattering effect. May be added.
  • light (waveguide mode or glass mode) guided inside the organic electroluminescent element 1B can be extracted to the outside of the organic electroluminescent element 1B by scattering, and the light utilization efficiency is further improved. improves.
  • fine particles 16c having a light scattering effect are added to both the first optical buffer layer 16a and the second optical buffer layer 16b. At least one of the first optical buffer layer 16a and the second optical buffer layer 16b may be used. Moreover, you may make it add the microparticles
  • the size of the fine particles 16c is preferably 100 nm or less if only the refractive index adjustment is performed, and 100 nm or more if the scattering effect is expected.
  • the material of the fine particles 16c inorganic materials such as SiO 2 , ZrO 2 and TiO 2 , organic materials such as PMMA (Poly methyl methacrylate), etc. can be used in combination.
  • the addition amount is preferably 1 wt% (deposition percentage) or more, and this configuration can also be adopted in each embodiment described below.
  • FIG. 15 is a cross-sectional view showing the structure of the organic electroluminescent element 1C in the present embodiment
  • FIG. 16 is a diagram showing the material, film thickness, and refractive index of each layer of the organic electroluminescent element 1C shown in FIG. These are figures which show the result of having calculated the light intensity distribution of the plasmon mode of the organic electroluminescent element in this Embodiment.
  • the refractive index of the optical buffer layers 16 and 16A (the refractive index on the second transparent electrode layer side) is higher than the refractive index of the organic light emitting layer 13. . If the refractive index of the optical buffer layers 16 and 16A is higher than the refractive index of the organic light emitting layer 13, the optical distance can be increased, which is advantageous in reducing the plasmon mode. Therefore, in the present embodiment, it will be described that the same effect can be obtained even when the refractive indexes of the optical buffer layers 16 and 16A are 1.65 + ⁇ n and are lower than those of other layers.
  • the optical buffer layer 16 having the two-layer structure of the first optical buffer layer 16a and the second optical buffer layer 16b which is employed in the first embodiment, is employed.
  • FIG. 15 shows an organic electroluminescent element 1C according to the present embodiment. Except for the first optical buffer layer 16a and the second optical buffer layer 16b constituting the optical buffer layer 16, the other configurations are the same as those of the organic electroluminescent element 1 in the first embodiment shown in FIGS.
  • TYZ65 having a film thickness of 50 nm is used for the first optical buffer layer 16a.
  • the refractive index is 1.65.
  • TYZ65 is a product number of a high refractive type hard coating agent “LIODURAS (registered trademark)” manufactured by Toyo Ink Co., Ltd.
  • the following five types of films were used in order to cause a refractive index difference with the first optical buffer layer 16a.
  • TYZ65 with a refractive index of 1.65, MgO with a refractive index of 1.74, Ta 2 O 5 with a refractive index of 1.81, HfO 2 with a refractive index of 1.93, and Si 3 N 4 with a refractive index of 2.03 were used.
  • the refractive index difference ( ⁇ n) from TYZ65 is 0.00
  • the refractive index difference ( ⁇ n) from MgO having a refractive index of 1.74 is 0.09
  • the refractive index difference ( ⁇ n) from Ta 2 O 5 is 0.16.
  • the difference in refractive index ( ⁇ n) from HfO 2 is 0.28
  • the difference in refractive index ( ⁇ n) from Si 3 N 4 is 0.38.
  • FIG. 17 shows the result of calculating the plasmon mode light intensity distribution in the organic electroluminescent element 1C having the above-described film configuration.
  • 530 nm was used as the emission wavelength.
  • the horizontal axis indicates the relative distance based on the back surface of the organic electroluminescent element 1, and the left vertical axis indicates the normalized light intensity.
  • the optical buffer layer 16 has a two-layer structure of the first optical buffer layer 16a and the second optical buffer layer 16b.
  • optical buffer layer 16 has a two-layer structure of the first optical buffer layer 16a and the second optical buffer layer 16b, and the same applies to the organic electroluminescent element 1A according to the second embodiment. The effect of this can be obtained.
  • FIG. 18 is a cross-sectional view showing the structure of the organic electroluminescent element 1D in the present embodiment
  • FIG. 19 is a diagram showing the material, film thickness, and refractive index of each layer of the organic electroluminescent element 1D shown in FIG. These are figures which show the result of having calculated the light intensity distribution of the plasmon mode of the organic electroluminescent element in this Embodiment.
  • the first optical buffer layer 16a and the second optical buffer layer 16b are the same. Comparison was made between a case where the refractive index is present (case 1) and a case where the relationship between the refractive index n1 of the first optical buffer layer 16a and the refractive index n2 of the second optical buffer layer 16b is n1 ⁇ n2 (case 2). Is. In case 2, the refractive index is different from that of the first and fifth embodiments in the material of the first optical buffer layer 16a. Other configurations are the same as those of the organic electroluminescent element 1 according to the first embodiment shown in FIGS.
  • TYZ69 is a product number of a high refractive type hard coat agent “LIODURAS (registered trademark)” manufactured by Toyo Ink Co., Ltd.
  • FIG. 20 shows the result of calculating the plasmon mode light intensity distribution in the organic electroluminescent element 1D having the above-described film configuration.
  • 530 nm was used as the emission wavelength.
  • the horizontal axis indicates the relative distance based on the back surface of the organic electroluminescent element 1, and the left vertical axis indicates the normalized light intensity.
  • the high refractive index layer (second optical buffer layer 16 b) / low refractive index layer (first optical buffer) compared to Case 1 consisting of a single refractive index layer. It can be seen that in the case 2 consisting of two layers 16a), the plasmon mode distributed in the organic light emitting layer 13 is reduced, and there is an effect of reducing the plasmon loss.
  • FIG. 21 shows a schematic configuration of lighting apparatus 1000 in the present embodiment.
  • the lighting device 1000 in the present embodiment is a ceiling lighting device using the organic electroluminescent element 1100 in each of the above embodiments on a ceiling 1200 of a room.
  • FIG. 22 shows a schematic configuration of lighting apparatus 2000 in the present embodiment.
  • the lighting device 2000 in the present embodiment is a lighting stand, and the organic electroluminescent element 2200 in each of the above embodiments is used for the head 2100 portion.
  • the electroluminescent element and the illuminating device using the electroluminescent element in the present embodiment the electroluminescent element and the illuminating device using the electroluminescent element that can further improve the utilization efficiency of light. It is possible to provide.
  • 1, 1A, 1B, 1C, 1D, 1000 2000 Organic electroluminescent element, 10 transparent substrate, 11 first transparent electrode layer, 12 hole transport layer, 13 organic light emitting layer, 14 electron transport layer, 15 second transparent electrode Layer, 15A metal electrode layer, 16, 16A, 16B optical buffer layer, 16a first optical buffer layer, 16b second optical buffer layer, 16c fine particles, 20 organic electroluminescent layer, 30 light reflecting layer, 1000 illumination device, 1200 ceiling 2000 lighting equipment, 2100 heads.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un élément électroluminescent (1) doté : d'une première couche d'électrode transparente (11) ; d'une seconde couche d'électrode transparente (15) ; d'une couche électroluminescente (20) qui est prise en sandwich entre la première couche d'électrode transparente (11) et la seconde couche d'électrode transparente (15) ; d'une couche tampon optique (16) qui est disposée du côté de la seconde couche d'électrode transparente (15) qui est opposée au côté sur lequel est disposée la couche électroluminescente (20) ; et d'une couche réfléchissant la lumière (30) qui est disposée du côté de la couche tampon optique (16) qui est opposée au côté sur lequel est disposée la seconde couche d'électrode transparente (15). Selon l'invention, l'indice de réfraction de la couche tampon optique (16) diffère du côté couche réfléchissant la lumière (30) et de son côté seconde électrode transparente (16), et l'indice de réfraction du côté couche réfléchissant la lumière (30) est plus important que l'indice de réfraction du côté seconde couche d'électrode transparente (16).
PCT/JP2013/076639 2012-10-26 2013-10-01 Élément électroluminescent organique et dispositif d'éclairage l'utilisant WO2014065084A1 (fr)

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