WO2014034539A1 - 回路基板の製造方法 - Google Patents
回路基板の製造方法 Download PDFInfo
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- WO2014034539A1 WO2014034539A1 PCT/JP2013/072510 JP2013072510W WO2014034539A1 WO 2014034539 A1 WO2014034539 A1 WO 2014034539A1 JP 2013072510 W JP2013072510 W JP 2013072510W WO 2014034539 A1 WO2014034539 A1 WO 2014034539A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0014—Shaping of the substrate, e.g. by moulding
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0108—Male die used for patterning, punching or transferring
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0156—Temporary polymeric carrier or foil, e.g. for processing or transferring
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/045—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by making a conductive layer having a relief pattern, followed by abrading of the raised portions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Definitions
- the present invention relates to a circuit board manufacturing method.
- circuit boards and the like used for these are also required to be downsized and thinned. For this reason, in addition to excellent electrical characteristics, it is necessary to form a higher-density circuit wiring pattern on the circuit board.
- Patent Document 1 a trench is formed in a substrate by laser ablation or imprinting, and a chemical treatment or a plasma treatment is performed to remove residues due to the trench formation, and then the surface of the substrate and the inner surface of the trench are formed.
- a method of manufacturing a circuit board having a predetermined wiring pattern by forming an electroless plating layer is disclosed.
- the size of the trench to be formed depends on the characteristics of the laser. Therefore, the trench is formed by a laser. In the method, there was a limit to miniaturization. In addition, when a method of forming a trench with a laser is used, there is a problem that the manufacturing cost increases.
- An object of the present invention is to provide a method for manufacturing a circuit board which can be reduced in height and can be miniaturized and has excellent electrical characteristics (particularly electrical insulation).
- a mold made of a photoresist corresponding to the concavo-convex pattern is used as a mold for forming the concavo-convex pattern.
- the present inventors have found that the above object can be achieved and have completed the present invention.
- the present inventors use a mold made of a photoresist to remove the mold after forming a fine wiring pattern, by treating the photoresist with a stripping treatment or a solution that can be dissolved, thereby removing the mold made of the photoresist. Since it can be removed, it has been found that the wiring can be miniaturized, and the present invention has been completed.
- a step of forming a resist pattern with a photoresist on a support to obtain a support with a resist pattern, and a curable resin comprising a curable resin composition on the resist pattern of the support with a resist pattern A step of forming a composition layer; a step of laminating a substrate on the curable resin composition layer; and the curable resin composition constituting the curable resin composition layer is cured to form the curable resin.
- a method of manufacturing a circuit board characterized in that it comprises a step of forming a fine wiring by plating, [2] A step of forming a resist pattern with a photoresist on a support to obtain a support with a resist pattern, and forming a curable resin composition layer comprising a curable resin composition on a substrate, The step of obtaining a curable resin composition substrate, the resist pattern in the support with a resist pattern, and the curable resin composition layer in the curable resin composition substrate are brought into contact with each other, and the resist pattern is The step of laminating so as to be embedded in the curable resin composition layer, and the step of curing the curable resin composition constituting the curable resin composition layer to make the curable resin composition layer a cured resin layer And before
- a method for manufacturing the circuit board according to any one of the above, [6] The above steps are performed on both sides of the substrate, and a layer formed by forming fine wiring is formed on both sides of the substrate in the concave portion of the cured resin layer having a concavo-convex structure.
- a method for producing a circuit board according to any one of [7] A circuit board obtained by the production method according to any one of [1] to [6], Is provided.
- circuit board that can be reduced in height and can be miniaturized and has excellent electrical characteristics (particularly, electrical insulation).
- FIG. 1 is a diagram illustrating a circuit board manufacturing method according to an embodiment of the present invention.
- FIG. 2 is a diagram illustrating a circuit board manufacturing method according to an embodiment of the present invention.
- FIG. 3 is a diagram showing a circuit board manufacturing method according to another embodiment of the present invention.
- FIG. 4 is a diagram illustrating a circuit board manufacturing method according to an embodiment of the present invention.
- the circuit board manufacturing method of the present invention is a method for manufacturing a circuit board (see FIG. 2C) including a cured resin layer 30a in which fine wirings 50 are formed in a predetermined pattern on a substrate 40. .
- the circuit board manufacturing method of the present invention includes the following steps.
- (Process A) The process of forming the resist pattern 20 with a photoresist on the support body 10, and obtaining a support body with a resist pattern (refer FIG. 1 (A)).
- (Process B) The process of forming the curable resin composition layer 30 which consists of a curable resin composition on the said resist pattern 20 of the said support body with a resist pattern (refer FIG.1 (B)).
- Process C The process of laminating
- Step D Step of curing the curable resin composition constituting the curable resin composition layer 30 to make the curable resin composition layer 30 a cured resin layer 30a (see FIG. 2A).
- Step E Step of peeling the support 10 from the curable resin composition layer 30 or the cured resin layer 30a and the resist pattern 20 before or after curing the curable resin composition (FIG. 2A). reference).
- Process F The process of forming the cured resin layer 30a which has an uneven structure by removing the said resist pattern 20 from the said cured resin layer 30a by peeling or dissolving the said resist pattern 20 (FIG.2 (B)) reference).
- Process G The process of forming the fine wiring 50 by plating in the recessed part of the said uneven structure formed in the said cured resin layer 30a (refer FIG.2 (C)).
- Step A is a step of forming a resist pattern 20 with a photoresist on the support 10 to obtain a support 10 having the resist pattern 20, that is, a support with a resist pattern, as shown in FIG. is there.
- the support body 10 used at the process A Members, such as a film form and plate shape, can be mentioned, for example, a polyethylene terephthalate film, a polypropylene film, a polyethylene film, a polycarbonate film, a polyethylene naphthalate film, a polycrystal Examples thereof include polymer films such as arylate films, nylon films, and polytetrafluoroethylene films, and plate-like and film-like glass substrates.
- the support body 10 peels in a later process, you may give a peeling process to the surface in which the resist pattern 20 is formed.
- the method for forming the resist pattern 20 on the support 10 is not particularly limited, and for example, the following method may be mentioned. That is, a photoresist film is formed on the support 10 by applying a photoresist composition on the support 10 or laminating a dry film made of the photoresist composition. Next, the photoresist film is irradiated with actinic rays through a mask pattern, a latent image pattern is formed in the photoresist film, and the resist pattern 20 is exposed by contacting with an alkali developer to reveal the resist pattern 20.
- the photoresist composition used in this case may be either a positive composition or a negative composition.
- Examples of the photoresist composition used in the present invention include those containing an alkali-soluble resin and a photosensitizer.
- the alkali-soluble resin is not particularly limited as long as it is a resin soluble in a developer composed of an alkaline aqueous solution or the like.
- the alkali-soluble resin is not particularly limited as long as it is a resin soluble in a developer composed of an alkaline aqueous solution or the like, and is a resin used in a known photoresist composition, such as a novolak resin, a resole resin, an acrylic resin, or polyvinyl alcohol. Styrene-acrylic acid copolymer, hydroxystyrene polymer, polyvinyl hydroxybenzoate and the like.
- a photosensitizer when a positive composition is used, a quinonediazide group-containing compound can be cited as a representative example.
- a compound that generates an acid (acid generator) or a compound that generates a radical (radical generator) can be used as a photosensitive agent.
- the acid generator include onium salts, halogen-containing compounds, diazoketone compounds, sulfone compounds, and sulfonic acid compounds.
- the radical generator for example, known compounds such as alkylphenone photopolymerization initiators and acylphosphine oxide photopolymerization initiators can be used.
- a photoresist composition obtained by adding a solvent to an alkali-soluble resin and a photosensitive agent is supported. After coating on the body 10, the photoresist film can be formed on the support 10 by drying the solvent.
- a photoresist film is formed by laminating a dry film made of a photoresist composition, a commercially available dry film is preferably placed on the support 10 at 80 to 120 ° C., more preferably 90 to By thermocompression bonding at 110 ° C., a photoresist film can be formed on the support 10.
- SRF SS7200 made by Toagosei Co., Ltd.
- a positive type dry film for example.
- a negative type dry film “SUNFORT UFG” (manufactured by Asahi Kasei E-Materials), “NIT3025” (manufactured by Nichigo Morton), “SU-8 3000” (manufactured by Nippon Kayaku Co., Ltd.), etc. are used. be able to.
- a latent image pattern corresponding to a desired fine wiring pattern is formed by irradiating the photoresist film formed on the support 10 with actinic rays through a mask pattern.
- the exposure amount of the actinic ray is not particularly limited, and may be appropriately selected according to the type of the photoresist composition to be used.
- the exposure amount can be controlled according to the light transmittance of the mask pattern, so the thickness of the photoresist film after irradiation with actinic rays is set to the initial film thickness.
- a latent image pattern corresponding to a desired fine wiring pattern having a different resist film thickness can be formed, such as a near part, a part where the film thickness is reduced, or a part where the resist is removed. Thereby, a through-hole, a non-through-hole, etc. can be formed in the cured resin layer at once.
- a method for forming a semi-transmission part on a photomask As a method for forming a semi-transmission part on a photomask, a method of creating a semi-transmission part by blurring a fine pattern, or a film having an arbitrary transmittance is further laminated and patterned to form a semi-transmission part. A method or the like is used.
- the photoresist film on which the latent image pattern is formed is brought into contact with an alkali developer to reveal the pattern, thereby forming a resist pattern 20, and a support with a resist pattern as shown in FIG. (Support 10 having resist pattern 20) is obtained.
- alkali developer used for development for example, alkali metal salts, amines, and ammonium salts can be used. Specifically, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, etc.
- Alkali metal salts ammonia water; primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine and methyldiethylamine; tetramethylammonium Quaternary ammonium salts such as hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, choline; alcohol amines such as dimethylethanolamine and triethanolamine; pyrrole, piperidine, 1,8-diazabicyclo [5. .0] undec-7-ene, 5-diazabicyclo [4.3.0] non-ene, cyclic amines such as N- methylpyrrolidone; and the like.
- a method of bringing the photoresist film on which the latent image pattern is formed into contact with an alkali developer for example, a paddle method, a spray method, a dipping method, or the like is used.
- the conditions for performing development are appropriately set in the range of usually 0 to 100 ° C., preferably 5 to 55 ° C., more preferably 10 to 30 ° C., and usually 30 to 180 seconds.
- the resist pattern-supported substrate thus obtained may be rinsed with a rinsing solution as necessary in order to remove development residues.
- a rinsing solution as necessary in order to remove development residues.
- Step B is a curable resin composition comprising a curable resin composition containing a curable resin and a curing agent on the resist pattern 20 (see FIG. 1A) of the support with a resist pattern obtained in Step A.
- This is a step of obtaining the support 10 having the resist pattern 20 and the curable resin composition layer 30 as shown in FIG.
- the curable resin composition layer 30 is cured to form a cured resin layer 30a (see FIG. 2C), thereby forming an electrical insulating layer in the circuit board. Is a layer.
- the curable resin composition layer 30 is preferably formed as an uncured or semi-cured resin layer.
- the uncured resin layer is a state in which substantially the entire resin layer can be dissolved in a solvent in which the thermosetting resin constituting the resin layer can be dissolved.
- a semi-cured resin layer is one that has been cured to the extent that it can be further cured by heating, and one that is partially dissolved in a solvent in which the thermosetting resin constituting the resin layer can be dissolved. It is.
- the method for forming the curable resin composition layer 30 is not particularly limited, but is cured by applying the curable resin composition to the surface on which the resist pattern 20 of the support with a resist pattern is formed and drying it. And a method of forming the functional resin composition layer 30.
- the curable resin composition for forming the curable resin composition layer 30 usually contains a curable resin and a curing agent.
- the curable resin is not particularly limited as long as it shows thermosetting by combining with a curing agent and has electrical insulation properties.
- epoxy resin, maleimide resin, (meth) acrylic resin, diallyl examples thereof include phthalate resin, triazine resin, alicyclic olefin polymer, aromatic polyether polymer, benzocyclobutene polymer, cyanate ester polymer, polyimide, and the like. These resins are used alone or in combination of two or more.
- an alicyclic olefin polymer an aromatic polyether polymer, a benzocyclobutene polymer, a cyanate ester polymer, and a polyimide are preferable, and an alicyclic olefin polymer and an aromatic polyether polymer are more preferable.
- an alicyclic olefin polymer is particularly preferable.
- liquid crystal polymers can also be used as preferred thermosetting resins. Examples of liquid crystal polymers include polymers of aromatic or aliphatic dihydroxy compounds, polymers of aromatic or aliphatic dicarboxylic acids, polymers of aromatic hydroxycarboxylic acids, aromatic diamines, aromatic hydroxyamines or aromatic aminocarboxylic acids. Examples of such polymers are exemplified. In this specification, “(meth) acryl” means methacryl or acryl.
- the weight average molecular weight (Mw) of the curable resin is not particularly limited, but is usually 3,000 to 1,000,000, preferably 4,000 to 500,000.
- the weight average molecular weight (Mw) is a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent.
- the alicyclic olefin polymer is an unsaturated hydrocarbon polymer having an alicyclic structure.
- the alicyclic structure include a cycloalkane structure and a cycloalkene structure.
- a cycloalkane structure is preferable from the viewpoint that the mechanical strength and heat resistance of the resulting cured resin layer 30a can be increased.
- the alicyclic structure may be a monocyclic ring or a polycyclic ring (such as a condensed polycyclic ring, a bridged ring, or a combination polycyclic ring thereof).
- the number of carbon atoms constituting the alicyclic structure is not particularly limited, but is usually 4 to 30, preferably 5 to 20, and more preferably 5 to 15 when the curable composition is molded. And various properties such as mechanical strength and heat resistance of the obtained cured resin layer 30a are highly balanced and suitable.
- the alicyclic olefin polymer preferably has a polar group
- the polar group includes a hydroxyl group, a carboxyl group, an alkoxyl group, an epoxy group, a glycidyl group, an oxycarbonyl group, a carbonyl group, an amino group, and an ester.
- Group, a carboxylic acid anhydride group, etc. are mentioned, and especially a carboxyl group and a carboxylic acid anhydride group are suitable.
- the content of the repeating unit having a polar group in 100 mol% of all the repeating units constituting the alicyclic olefin polymer is not particularly limited, but is usually 5 to 60 mol%, preferably 10 to 50 mol%. .
- the number of polar groups present in each repeating unit is not particularly limited, but usually 1 to 2 is preferred.
- An alicyclic olefin polymer is usually obtained by addition polymerization or ring-opening polymerization of an alicyclic olefin monomer, and hydrogenation of an unsaturated bond portion if desired, or addition polymerization of an aromatic olefin monomer.
- the aromatic ring portion of the obtained polymer is obtained by hydrogenation.
- the alicyclic olefin polymer having a polar group is obtained by, for example, (1) introducing a polar group into the alicyclic olefin polymer by a modification reaction, and (2) a monomer containing the polar group.
- alicyclic olefin monomer means a monomer having a carbon-carbon double bond in the alicyclic structure
- aromatic olefin monomer means Means a monomer composed of a chain hydrocarbon having an aromatic group and a carbon-carbon double bond.
- Examples of the alicyclic olefin monomer for forming the alicyclic olefin polymer include bicyclo [2.2.1] -hept-2-ene (common name: norbornene), 5-methyl-bicyclo [2. 2.1] -Hept-2-ene, 5,5-dimethyl-bicyclo [2.2.1] -hept-2-ene, 5-ethyl-bicyclo [2.2.1] -hept-2-ene 5-butyl-bicyclo [2.2.1] -hept-2-ene, 5-hexyl-bicyclo [2.2.1] -hept-2-ene, 5-octyl-bicyclo [2.2.1] ] -Hept-2-ene, 5-octadecyl-bicyclo [2.2.1] -hept-2-ene, 5-ethylidene-bicyclo [2.2.1] -hept-2-ene, 5-methylidene- Bicyclo [2.2.1] -hept
- Tricyclo [4.3.0.1 2,5 ] deca-3,7-diene (common name: dicyclopentadiene), tricyclo [4.3.0.1 2,5 ] dec-3-ene, tricyclo [ 4.4.0.1 2,5 ] undeca-3,7-diene, tricyclo [4.4.0.1 2,5 ] undeca-3,8-diene, tricyclo [4.4.0.1 2 , 5 ] undec-3-ene, tetracyclo [7.4.0.1 10,1 .
- Tetracyclo [4.4.0.1 2,5 . 1 7,10 ] -dodec-3-ene (common name: tetracyclododecene), 8-methyl-tetracyclo [4.4.0.1 2,5 . 1 7,10 ] -dodec-3-ene, 8-ethyl-tetracyclo [4.4.0.1 2,5 . 1 7,10 ] -dodec-3-ene, 8-methylidene-tetracyclo [4.4.0.1 2,5 . 1 7,10 ] -dodec-3-ene, 8-ethylidene-tetracyclo [4.4.0.1 2,5 .
- aromatic olefin monomer examples include styrene, ⁇ -methylstyrene, and divinylbenzene.
- the alicyclic olefin monomer and / or aromatic olefin monomer can be used alone or in combination of two or more.
- the alicyclic olefin polymer is obtained by copolymerizing the above-described alicyclic olefin monomer and / or aromatic olefin monomer and other monomers copolymerizable therewith. It may be a thing.
- copolymerizable monomers include ethylene; propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3-methyl-1-pentene, 3-ethyl-1- Pentene, 4-methyl-1-pentene, 4-methyl-1-hexene, 4,4-dimethyl-1-hexene, 4,4-dimethyl-1-pentene, 4-ethyl-1-hexene, 3-ethyl- ⁇ -olefins having 3 to 20 carbon atoms such as 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, and 1-eicocene; 1,4-hexadiene, Non-conjugated dienes such as 4-methyl-1,4-hexadiene, 5-methyl-1,4-hexadiene, and 1,7-octadiene; and the
- the polymerization of the alicyclic olefin monomer or aromatic olefin monomer and the hydrogenation performed as desired are not particularly limited and can be performed according to a known method.
- alicyclic olefin polymers include ring-opening polymers of norbornene monomers and hydrogenated products thereof, addition polymers of norbornene monomers, addition weights of norbornene monomers and vinyl compounds.
- examples thereof include a polymer, a monocyclic cycloalkene polymer, an alicyclic conjugated diene polymer, a vinyl alicyclic hydrocarbon polymer and a hydrogenated product thereof, and an aromatic ring hydrogenated product of an aromatic olefin polymer.
- ring-opening polymers of norbornene monomers and hydrogenated products thereof addition polymers of norbornene monomers, addition polymers of norbornene monomers and vinyl compounds, aromatic olefin polymers
- An aromatic ring hydrogenated product is preferable, and a hydrogenated product of a ring-opening polymer of a norbornene monomer is particularly preferable.
- These alicyclic olefin polymers can be used alone or in combination of two or more.
- the curing agent to be contained in the curable resin composition is not particularly limited, and for example, an ionic curing agent, a radical curing agent, or a curing agent having both ionic and radical properties can be used.
- Specific examples of the curing agent include halogen-free isocyanurate type containing allyl group and epoxy group such as 1-allyl-3,5-diglycidyl isocyanurate and 1,3-diallyl-5-glycidyl isocyanurate.
- Nitrogen-based curing agents such as curing agents; bisphenol A bis (ethylene glycol glycidyl ether) ether, bisphenol A bis (diethylene glycol glycidyl ether) ether, bisphenol A bis (triethylene glycol glycidyl ether) ether, and bisphenol A bis (propylene glycol glycidyl ether) Ether) Ether and other bisphenol A glycidyl ether type epoxy compounds and other glycidyl ether type epoxy compounds, fluorene type epoxy compounds and other alicyclic epoxy compounds, Polyepoxy compounds such as succinimidyl ester type epoxy compounds; acid anhydride or dicarboxylic acid derivatives such as dicarboxylic acid compounds; diol compound, triol compound, and a polyol compound such as polyhydric phenol compounds; such curing agents.
- bisphenol A bis (ethylene glycol glycidyl ether) ether bisphenol A bis (diethylene glycol glycidy
- curing agents can be used alone or in combination of two or more.
- at least one selected from the group consisting of a polyvalent epoxy compound, a dicarboxylic acid derivative, and a polyol compound because the mechanical strength of the resulting cured resin layer 30a can be increased. It is more preferable to use a polyvalent epoxy compound.
- the curable resin composition used in the present invention includes a curing accelerator, a filler, a flame retardant, a flame retardant aid, a heat stabilizer, a weather stabilizer, and aging.
- a curing accelerator a filler
- a flame retardant a flame retardant aid
- a heat stabilizer a heat stabilizer
- a weather stabilizer a weather stabilizer
- the method of applying the curable resin composition to the surface on which the resist pattern 20 of the support with a resist pattern is formed is not particularly limited, but the curable resin composition may be a solution cast method or a melt cast. Examples of the method include molding by a method, etc., but production by a solution casting method is preferable. In the case of molding by the solution casting method, a varnish of a curable resin composition is prepared and applied to the surface on which the resist pattern 20 of the support with a resist pattern is formed, and then the organic solvent is removed by drying.
- the method for preparing the varnish of the curable resin composition is not particularly limited, but it can be prepared by mixing each component constituting the curable resin composition with an organic solvent.
- the organic solvent include aromatic hydrocarbon organic solvents such as toluene, xylene, ethylbenzene, trimethylbenzene, and anisole; aliphatic hydrocarbon organic solvents such as n-pentane, n-hexane, and n-heptane; Aliphatic hydrocarbon organic solvents such as cyclopentane and cyclohexane; Halogenated hydrocarbon organic solvents such as chlorobenzene, dichlorobenzene, and trichlorobenzene; Ketone organics such as methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, and cyclohexanone A solvent etc. can be mentioned. These organic solvents can be used alone or in combination of two or more.
- the amount of the organic solvent used is appropriately selected depending on the purpose of controlling the thickness of the curable resin composition layer 30 and improving the flatness, but the solid content concentration of the varnish is usually 5 to 70% by weight, preferably The range is 10 to 65% by weight, more preferably 20 to 60% by weight.
- Examples of the coating method include dip coating, roll coating, curtain coating, die coating, and slit coating.
- the conditions for removing and drying the organic solvent are preferably set to a temperature at which the curable resin composition layer 30 is not cured so that the curable resin composition layer 30 is in an uncured or semi-cured state.
- the temperature is usually 20 to 200 ° C., preferably 30 to 150 ° C.
- the drying time is usually 30 seconds to 1 hour, preferably 1 minute to 30 minutes.
- the thickness of the curable resin composition layer 30 is usually 0.1 to 150 ⁇ m, preferably 0.5 to 100 ⁇ m, more preferably 1 to 80 ⁇ m.
- step C the substrate 40 is laminated on the surface of the support 10 having the resist pattern 20 and the curable resin composition layer 30 obtained in step B on the side of the curable resin composition layer 30.
- this is a step of obtaining a pre-cured laminate comprising the support 10, the resist pattern 20, the curable resin composition layer 30, and the substrate 40.
- the substrate 40 is not particularly limited, and examples thereof include a substrate having an electrical insulating layer and a conductor circuit layer formed on one or both surfaces of the electrical insulating layer. Specific examples of such a substrate 40 include a printed wiring board and a silicon wafer substrate.
- the thickness of the substrate 40 is usually 10 ⁇ m to 2 mm, preferably 30 ⁇ m to 1.6 mm, more preferably 50 ⁇ m to 1 mm.
- the electrical insulating layer constituting the substrate 40 is mainly composed of a thermosetting resin having electrical insulation, and examples of such a thermosetting resin include an alicyclic olefin polymer. Examples include coalesced resin, epoxy resin, maleimide resin, (meth) acrylic resin, diallyl phthalate resin, triazine resin, aromatic polyether polymer, cyanate ester polymer, and polyimide.
- an electrical insulating layer can be obtained by curing a curable composition containing these thermosetting resins and a curing agent.
- substrate may contain the glass fiber, the resin fiber, etc. in the electrical insulation layer from a viewpoint of an intensity
- a material of the conductor circuit layer constituting the substrate 40 a conductive metal is usually used.
- the method of laminating the substrate 40 on the surface of the support 10 having the resist pattern 20 and the curable resin composition layer 30 on the curable resin composition layer 30 side is not particularly limited.
- a method in which the substrate 40 is thermocompression bonded to the curable resin composition layer 30 is exemplified.
- the temperature during thermocompression bonding is usually 30 to 250 ° C., preferably 70 to 200 ° C.
- the crimping force is usually 10 kPa to 20 MPa, preferably 100 kPa to 10 MPa
- the crimping time is usually 30 seconds to 5 hours, preferably 1 minute. ⁇ 3 hours.
- thermocompression bonding may be performed in a reduced pressure atmosphere (preferably 100 kPa to 1 Pa, more preferably 40 kPa to 10 Pa).
- step D the curable resin composition constituting the curable resin composition layer 30 is cured for the pre-cured laminate including the support 10, the resist pattern 20, the curable resin composition layer 30, and the substrate 40. As shown to FIG. 2 (A), it is the process used as the cured resin layer 30a.
- the curing conditions for curing the curable resin composition layer 30 may be selected according to the type of curing agent contained in the curable resin composition layer 30, but the curing temperature is usually 130 to 230 ° C. The temperature is preferably 150 to 200 ° C. The curing time is usually 20 to 300 minutes, preferably 40 to 150 minutes. In the production method of the present invention, when the substrate 40 is thermocompression bonded to the curable resin composition layer 30, the thermocompression bonding and the curable resin composition layer are performed by thermocompression bonding under the above temperature conditions. 30 curings may be performed simultaneously.
- step E before the curable resin composition layer 30 is cured in the above-described step D, or after the curable resin composition layer 30 is cured, as shown in FIG.
- the support 10 is peeled from the cured resin layer 30a and the resist pattern 20 after curing. That is, in the manufacturing method of the present invention, the support 10 is peeled after the step C described above or after the step D described above.
- from the viewpoint of peeling the support body 10 favorably, before hardening the curable resin composition layer 30, at any timing after hardening the curable resin composition layer 30. Even when the support 10 is peeled off, it is desirable to peel off the support 10 after cooling the laminate to room temperature.
- Step F peels or dissolves the resist pattern 20 and removes the resist pattern 20 from the cured resin layer 30a, thereby forming the substrate 40 having the cured resin layer 30a having a concavo-convex structure as shown in FIG. It is a process of forming.
- the method of peeling the resist pattern 20 is not particularly limited, and examples thereof include a method of immersing the resist pattern 20 and the substrate 40 having the cured resin layer 30a in a solution capable of peeling the resist pattern 20.
- a solution for dissolving the resist pattern 20 for example, an aqueous solution (stripping solution) such as amines or sodium hydroxide can be used.
- the substrate 40 having the resist pattern 20 and the cured resin layer 30a is rocked and immersed in an aqueous solution at 60 to 80 ° C. adjusted to have a sodium hydroxide concentration of 60 g / liter for 1 to 50 minutes.
- a method of peeling the resist pattern 20 can be used.
- a method of dissolving the resist pattern 20 is not particularly limited, and examples thereof include a method of immersing the resist pattern 20 and the substrate 40 having the cured resin layer 30a in a solution capable of dissolving the resist pattern 20.
- a solution for dissolving the resist pattern 20 for example, a solution (desmear liquid) of an oxidizing compound such as permanganate can be used.
- the substrate 40 having the resist pattern 20 and the cured resin layer 30a is placed in an aqueous solution at 60 to 80 ° C. adjusted to have a sodium permanganate concentration of 60 g / liter and a sodium hydroxide concentration of 28 g / liter.
- a method of dissolving the resist pattern 20 by immersing in rocking for ⁇ 50 minutes can be used.
- ultrasonic waves can be used in combination.
- the action of the desmear solution is used.
- a surface roughening treatment for roughening the surface of the cured resin layer 30a it is preferable to perform a surface roughening treatment for roughening the surface of the cured resin layer 30a.
- the conditions for performing the surface roughening treatment of the cured resin layer 30a can be adjusted as appropriate by adjusting the temperature and time at the time of the rocking immersion in the desmear liquid, for example.
- the cured resin layer 30a and the fine wiring 50 are formed. It is possible to further increase the adhesion.
- the resist pattern 20 when performing the surface roughening treatment of the cured resin layer 30a, the resist pattern 20 may be peeled or dissolved and the surface roughening treatment of the cured resin layer 30a may be simultaneously performed. It is good also as a structure which performs peeling or melt
- the fine wiring 50 is formed by plating in the concave portion of the concavo-convex structure formed in the cured resin layer 30a, so that the cured resin layer 30a and the fine wiring 50 made of a conductor are formed.
- a step of obtaining a circuit board comprising the board 40 provided with
- the method for forming the fine wiring 50 is not particularly limited, but is preferably performed by an electroless plating method from the viewpoint that a conductor having excellent adhesion can be formed.
- the fine wiring 50 when forming the fine wiring 50 by the electroless plating method, first, before forming the metal thin film on the surface of the cured resin layer 30a, silver, palladium, zinc, cobalt or the like is formed on the cured resin layer 30a. It is common to attach catalyst nuclei.
- the method for attaching the catalyst nucleus to the cured resin layer 30a is not particularly limited.
- a metal compound such as silver, palladium, zinc, or cobalt, or a salt or complex thereof is added to water or an organic solvent such as alcohol or chloroform.
- Examples include a method of reducing a metal after being immersed in a solution (which may contain an acid, an alkali, a complexing agent, a reducing agent, etc., if necessary) dissolved at a concentration of 001 to 10% by weight. .
- a solution which may contain an acid, an alkali, a complexing agent, a reducing agent, etc., if necessary
- electroless plating solution used in the electroless plating method a known autocatalytic electroless plating solution may be used, and the metal species, reducing agent species, complexing agent species, hydrogen ion concentration, The dissolved oxygen concentration is not particularly limited.
- electroless nickel-phosphorous plating solution using sodium hypophosphite as reducing agent Electroless nickel-boron plating solution using dimethylamine borane as reducing agent; electroless palladium plating solution; electroless palladium-phosphorous plating solution using sodium hypophosphite as reducing agent; electroless gold plating solution; electroless silver Plating solution: An electroless plating solution such as an electroless nickel-cobalt-phosphorous plating solution using sodium hypophosphite as a reducing agent can be used.
- the surface of the substrate can be brought into contact with a rust preventive agent to carry out a rust prevention treatment.
- a metal thin film can also be heated in order to improve adhesiveness.
- the heating temperature is usually 50 to 350 ° C., preferably 80 to 250 ° C. In this case, heating may be performed under a pressurized condition.
- a pressurizing method at this time for example, a method using a physical pressurizing means such as a hot press machine or a pressurizing and heating roll machine can be cited.
- the applied pressure is usually 0.1 to 20 MPa, preferably 0.5 to 10 MPa. Within this range, high adhesion between the metal thin film and the cured resin layer 30a or the substrate 40 can be ensured.
- the fine wiring 50 formed by this method is usually composed of a metal thin film and plating grown thereon.
- electroless plating is formed on the entire surface of the resin, the electrolytic plating also grows beyond the predetermined pattern. Therefore, it is necessary to remove the metal thin film other than the predetermined pattern. Examples of the method for removing the metal thin film include etching and polishing.
- a circuit board including a cured resin layer 30a in which fine wirings 50 are formed in a predetermined pattern on a substrate 40 is provided. Can be manufactured. And according to such a manufacturing method of the present invention, a pattern for forming a fine wiring 50 using a mold in which a resist pattern 20 is formed on a support 10 as shown in FIG. Since the resist pattern 20 can be removed by a solution that can peel or dissolve the resist pattern 20, it is possible to reduce the height of the cured resin layer 30a and reduce the fine wiring 50. It can be formed satisfactorily.
- the cured resin layer 30a is patterned using the resist pattern 20, so that it is not necessary to impart photosensitivity to the material constituting the cured resin layer 30a. Therefore, the cured resin layer 30a can be made excellent in electrical characteristics (particularly electrical insulation).
- the obtained cured resin layer has a problem that the electrical characteristics are deteriorated. According to this, such a problem can be effectively solved.
- the circuit board obtained by the above-described manufacturing method of the present invention is used as the substrate 40, and the above-described Step A to Step G can be repeated to obtain a multilayer circuit board.
- the above-described steps A to G are repeated, for example, on the surface on which the cured resin layer 30a and the fine wiring 50 are formed, among the circuit boards obtained by the manufacturing method of the present invention described above.
- a multilayer circuit board can be formed by repeatedly laminating the cured resin layer 30a and the fine wiring 50.
- the surface opposite to the surface on which the cured resin layer 30a and the fine wiring 50 are formed that is, the substrate 40 shown in FIG.
- a multilayer circuit board including the cured resin layer 30a and the fine wiring 50 can be formed on both surfaces. Further, even if a multilayer circuit board is obtained by repeatedly laminating the cured resin layer 30a and the fine wiring 50 on the cured resin layer 30a and the fine wiring 50 formed on both surfaces in this way. Good.
- the circuit board and multilayer circuit board of the present invention are, for example, a mobile phone, a PHS, a notebook personal computer, a PDA (personal digital assistant), a mobile video phone, a personal computer, a supercomputer, a server, and a router.
- Liquid crystal projectors Liquid crystal projectors, engineering workstations (EWS), pagers, word processors, televisions, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, devices with touch panels, etc. It can be suitably used for various electronic devices.
- FIG. 3 is a diagram illustrating a method of manufacturing a circuit board according to another embodiment of the present invention.
- another manufacturing method of the present invention includes the following steps.
- Process A The process of forming the resist pattern 20 with a photoresist on the support body 10, and obtaining a support body with a resist pattern (refer FIG. 3 (A)).
- Step B ′ A step of obtaining a curable resin composition substrate by forming the curable resin composition layer 30 made of the curable resin composition on the substrate 40 (see FIG. 3A).
- Step C ′ The resist pattern 20 in the support with a resist pattern and the curable resin composition layer 30 in the curable resin composition substrate are brought into contact with each other so that the resist pattern 20 is the curable resin.
- a step of stacking so as to be embedded in the composition layer 30 see FIG. 3B).
- Step D Step of curing the curable resin composition constituting the curable resin composition layer 30 to make the curable resin composition layer 30 a cured resin layer 30a (see FIG. 2A).
- Step E Step of peeling the support 10 from the curable resin composition layer 30 or the cured resin layer 30a and the resist pattern 20 before or after curing the curable resin composition (FIG. 2A). reference).
- Process F The process of forming the cured resin layer 30a which has an uneven structure by removing the said resist pattern 20 from the said cured resin layer 30a by peeling or dissolving the said resist pattern 20 (FIG.2 (B)) reference).
- Step G The process of forming the fine wiring 50 by plating in the recessed part of the said uneven structure formed in the said cured resin layer 30a (refer FIG.2 (C)).
- Step A, Step D to Step G are the same as those described above, and therefore, Step B ′ and Step C ′ will be described in detail below.
- Step B ′ is a step of obtaining the curable resin composition substrate shown in FIG. 3A by forming the curable resin composition layer 30 made of the curable resin composition on the substrate 40.
- the method for forming the curable resin composition layer 30 on the substrate 40 is not particularly limited, and examples thereof include a method in which a film-shaped or sheet-shaped molded body of the curable resin composition is bonded to the substrate 40. .
- the curable resin composition and the substrate 40 those similar to those exemplified in the above-described Step B and Step C can be used.
- a film-like or sheet-like molded body of the curable resin composition can be obtained by molding the curable resin composition by a solution cast method, a melt cast method, or the like, among these, It is preferable to produce by a solution casting method.
- the organic solvent is dried and removed to obtain a film-shaped or sheet-shaped molded body of the curable resin composition.
- a varnish of curable resin composition it can prepare similarly to the process B mentioned above.
- Examples of the support used in the solution casting method include a resin film (carrier film) and a metal foil.
- a resin film a thermoplastic resin film is usually used. Specific examples include a polyethylene terephthalate film, a polypropylene film, a polyethylene film, a polycarbonate film, a polyethylene naphthalate film, a polyarylate film, and a nylon film.
- these resin films a polyethylene terephthalate film and a polyethylene naphthalate film are preferable because they are excellent in heat resistance, chemical resistance, peelability after lamination, and the like.
- the metal foil include copper foil, aluminum foil, nickel foil, chrome foil, gold foil, and silver foil.
- a copper foil particularly an electrolytic copper foil or a rolled copper foil is preferred because of its good conductivity and low cost.
- the thickness of the support is not particularly limited, but is usually 1 to 150 ⁇ m, preferably 2 to 100 ⁇ m, more preferably 3 to 50 ⁇ m from the viewpoint of workability and the like.
- Examples of the coating method include dip coating, roll coating, curtain coating, die coating, and slit coating.
- the conditions for removing and drying the organic solvent are appropriately selected depending on the type of the organic solvent, the drying temperature is usually 20 to 300 ° C., preferably 30 to 200 ° C., and the drying time is usually 30 seconds to 1 hour, preferably Is from 1 minute to 30 minutes.
- the thickness of the film-like or sheet-like molded product is usually 0.1 to 150 ⁇ m, preferably 0.5 to 100 ⁇ m, more preferably 1 to 80 ⁇ m.
- the substrate 40 provided with the curable resin composition layer 30 shown in FIG. 3A is obtained by bonding the film-shaped or sheet-shaped molded body of the curable resin composition thus obtained to the substrate 40.
- the film-shaped or sheet-shaped molded body with a support is usually in contact with the conductor circuit layer provided on the substrate 40.
- the lamination is carried out by using a pressure laminator, a press, a vacuum laminator, a vacuum press, a roll laminator, or the like by means of thermocompression (lamination), and substantially at the interface between the substrate 40 surface and the molded product.
- thermocompression bonding is preferably performed under vacuum in order to improve the embedding property of the conductor circuit layer provided on the substrate 40 in the curable resin composition layer 30 and suppress the generation of bubbles and the like.
- the temperature during thermocompression bonding is usually 30 to 250 ° C., preferably 70 to 200 ° C.
- the crimping force is usually 10 kPa to 20 MPa, preferably 100 kPa to 10 MPa
- the crimping time is usually 30 seconds to 5 hours, preferably 1 minute. It is about 3 hours, and the atmosphere is reduced to usually 100 kPa to 1 Pa, preferably 40 kPa to 10 Pa.
- step C ′ the resist pattern 20 and the curable resin composition substrate (curable resin composition) in the support with a resist pattern (support 10 provided with the resist pattern 20) obtained in the same manner as in step A described above.
- step B by laminating the resist pattern 20 so as to be embedded in the curable resin composition layer 30 in contact with the curable resin composition layer 30 in the substrate 40) having the physical layer 30).
- step C ′ Is a step of obtaining a pre-cured laminate comprising the support 10, the resist pattern 20, the curable resin composition layer 30, and the substrate 40.
- a method of laminating the resist pattern 20 so as to be embedded in the curable resin composition layer 30 is not particularly limited, but a support with a resist pattern (support 10 including the resist pattern 20) and a curable resin composition substrate. (Substrate 40 provided with curable resin composition layer 30) is superposed so that resist pattern 20 and curable resin composition layer 30 are in contact with each other, a pressure laminator, a press, a vacuum laminator, a vacuum press, and Examples thereof include a method in which a pressurizing machine such as a roll laminator is used for thermocompression bonding (lamination) to bond the two so that no substantial void exists at these interfaces.
- thermocompression bonding is preferably performed under vacuum in order to improve the embedding property of the resist pattern 20 in the curable resin composition layer 30 and suppress the generation of bubbles and the like.
- the temperature during thermocompression bonding is usually 30 to 250 ° C., preferably 70 to 200 ° C.
- the crimping force is usually 10 kPa to 20 MPa, preferably 100 kPa to 10 MPa
- the crimping time is usually 30 seconds to 5 hours, preferably 1 minute. It is about 3 hours, and the atmosphere is reduced to usually 100 kPa to 1 Pa, preferably 40 kPa to 10 Pa.
- a circuit board including a cured resin layer 30a in which fine wirings 50 are formed in a predetermined pattern on the substrate 40 can be manufactured.
- a fine wiring is formed using a mold in which a resist pattern 20 is formed on a support 10 as shown in FIG. 50, and the resist pattern 20 can be removed with a solution capable of peeling or dissolving the resist pattern 20, so that the height of the cured resin layer 30a can be reduced.
- the fine wiring 50 can be formed satisfactorily.
- the cured resin layer 30a is patterned using the resist pattern 20, and therefore it is necessary to impart photosensitivity to the material constituting the cured resin layer 30a. Therefore, the cured resin layer 30a can be made excellent in electrical characteristics (particularly electrical insulation).
- the circuit board obtained by the above-described another manufacturing method of the present invention is used as the substrate 40, and the above-described Step A, Step B ′, Step C ′, Step D to Step G are repeated.
- a multilayer circuit board can also be obtained.
- the aspect of the multilayer circuit board can be the same as described above, for example.
- Example 1 (Making mold) A release polyethylene terephthalate (NSL-6, manufactured by Fujimori Kogyo Co., Ltd.) and a dry film resist (SUNFORT UFG158, manufactured by Asahi Kasei E-Materials Co., Ltd.) having a thickness of 15 ⁇ m are laminated to form a release polyethylene terephthalate and a dry film resist.
- a laminate comprising: In addition, lamination was performed in a state where the release polyethylene terephthalate was heated to 50 ° C., and using a roll laminator under the conditions of a lamination speed of 1.5 m / min, a roll pressure of 0.3 MPa, and a roll temperature of 105 ° C. .
- the resulting laminate is exposed and developed using a quartz glass chrome mask to form a resist pattern 20 on a support 10 as shown in FIG.
- a mold support with a resist pattern
- the exposure conditions are such that a contact exposure apparatus is used and the exposure amount is 60 mJ / cm 2 , and the development is performed using a 1% sodium carbonate aqueous solution at a temperature of 30 ° C. for 30 seconds. It was.
- the thing which can form a parallel line pattern of L / S 3micrometer / 3micrometer and height 15micrometer was produced. That is, in the example shown in FIG.
- FIG. 3A an example in which a part of the resist pattern 20 is in contact with the substrate 40 by changing the height of the resist pattern 20 is shown, but in this embodiment, FIG. As shown in FIGS. 4A and 4B, the height of the resist pattern 20 is set to 15 ⁇ m so as not to contact the substrate 40.
- a build-up film (ZS-100, manufactured by Nippon Zeon Co., Ltd., a carboxyl group-containing alicyclic olefin polymer as a main component is formed on both sides of FR-4 material (glass epoxy resin substrate) as a core substrate.
- a build-up film-substrate laminate was prepared by laminating a curable resin composition film).
- the buildup film-substrate laminate is a laminate comprising the curable resin composition layer 30 and the substrate 40 shown in FIG. 3A, and the buildup film corresponds to the curable resin composition layer 30.
- the FR-4 material as the core substrate corresponds to the substrate 40.
- FIG. 3A an example in which the curable resin composition layer 30 is formed only on one side of the substrate 40 is shown. However, in this example, curing is performed on both sides of the substrate 40. What formed the functional resin composition layer 30 was used.
- lamination is performed using MVLP500 (Meiki Seisakusho) as a laminating apparatus, vacuuming is performed for 30 seconds, rubber pressing is performed at 90 ° C., 0.7 MPa, and 30 seconds, and then 100 ° C., 0.9 MPa. This was performed by hot pressing under the conditions of 60 seconds.
- the obtained cured laminate was prepared to have a swelling liquid (“Swelling Dip Securigant P”, manufactured by Atotech, “Securigant” is a registered trademark), 500 mL / L, and sodium hydroxide 3 g / L. After being immersed in an aqueous solution for 15 minutes by rocking, it was washed with water.
- a swelling liquid “Swelling Dip Securigant P”, manufactured by Atotech, “Securigant” is a registered trademark
- 500 mL / L 500 mL / L
- sodium hydroxide 3 g / L sodium hydroxide
- the cured resin layer 30a is formed only on one surface of the substrate 40, but in this embodiment, the cured resin layer 30a is formed on both surfaces of the substrate 40. Formed. In the oxidation treatment step, the surface of the cured resin layer 30a was also roughened along with the removal of the resist pattern 20.
- an aqueous solution of hydroxyamine sulfate (“Reduction Securigant P500”, manufactured by Atotech, “Securigant” is a registered trademark) is 100 mL / L, and an aqueous solution at 40 ° C. prepared to be 35 mL / L of sulfuric acid is subjected to oxidation treatment. The resulting laminate was immersed in rocking for 5 minutes, neutralized and reduced, and then washed with water.
- Alcup Activator MAT-1-A (trade name, manufactured by Uemura Kogyo Co., Ltd., “Alcup” is a registered trademark) is 200 mL / L
- Alcup Activator MAT-1-B (top product name, manufactured by Mura Kogyo Co., Ltd., “Alcup”) Is a 60 ° C Pd salt-containing plating catalyst aqueous solution prepared so that the registered trademark is 30 mL / L and sodium hydroxide is 0.35 g / L, and the pickled laminate is rock-immersed for 5 minutes. After washing with water.
- Alcup Reducer MAB-4-A (trade name, manufactured by Uemura Kogyo Co., Ltd., “Alcup” is a registered trademark) is 20 mL / L
- Alcup Reducer MAB-4-B (trade name, manufactured by Uemura Kogyo Co., Ltd., “Alcup” is a registered trademark) in an aqueous solution prepared to 200 mL / L.
- the laminate subjected to the catalyst application treatment was rock-immersed at 35 ° C. for 3 minutes to reduce the plating catalyst, and then washed with water.
- sulcup PEA-6-A (trade name, manufactured by Uemura Kogyo Co., Ltd., “Sulcup” is a registered trademark) 100 mL / L
- sulcup PEA-6-B-2X (trade name, Uemura Industrial Co., Ltd.) 50 mL / L
- Sulcup PEA-6-C (trade name, manufactured by Uemura Kogyo Co., Ltd.) 14 mL / L
- Sulcup PEA-6-D (trade name, manufactured by Uemura Industrial Co., Ltd.) 15 mL / L
- Sulcup PEA-6 -E (trade name, manufactured by Uemura Kogyo Co., Ltd.) 50 mL / L, 37% Formalin aqueous solution 5 mL / L prepared by immersion in electroless copper plating solution at a temperature of 36 ° C. for 20 minutes without blowing air
- the laminated body subjected to the annealing treatment is immersed in a 50 ° C. aqueous solution prepared so that PB242D (trade name, manufactured by Ebara Eugene Light Co., Ltd.) is 100 g / L, and degreased, and then, The degreased laminate was immersed in an aqueous solution prepared so as to have a sulfuric acid concentration of 100 g / L at room temperature for 2 minutes to perform pickling, and then washed with water.
- PB242D trade name, manufactured by Ebara Eugene Light Co., Ltd.
- the electroless copper plating When the electroless copper plating is sufficiently filled in the recesses in the cured resin layer 30a formed by removing the resist pattern 20 (at the time of filling of the electroless copper plating), the electroless elements formed in portions other than the recesses
- the thickness of the copper plating layer was 2 ⁇ m.
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Abstract
Description
〔1〕支持体上にフォトレジストによりレジストパターンを形成して、レジストパターン付支持体を得る工程と、前記レジストパターン付支持体の前記レジストパターン上に、硬化性樹脂組成物からなる硬化性樹脂組成物層を形成する工程と、前記硬化性樹脂組成物層上に、基板を積層する工程と、前記硬化性樹脂組成物層を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層を硬化樹脂層とする工程と、前記硬化性樹脂組成物を硬化させる前または後に、前記硬化性樹脂組成物層もしくは前記硬化樹脂層および前記レジストパターンから前記支持体を剥離する工程と、前記レジストパターンを剥離または溶解させて、前記硬化樹脂層から前記レジストパターンを除去することにより、凹凸構造を有する硬化樹脂層を形成する工程と、前記硬化樹脂層に形成された前記凹凸構造の凹部に、めっきにより微細配線を形成する工程と、を備えることを特徴とする回路基板の製造方法、
〔2〕支持体上にフォトレジストによりレジストパターンを形成して、レジストパターン付支持体を得る工程と、硬化性樹脂組成物からなる硬化性樹脂組成物層を、基板上に形成することで、硬化性樹脂組成物基板を得る工程と、前記レジストパターン付支持体における前記レジストパターンと、前記硬化性樹脂組成物基板における前記硬化性樹脂組成物層とを当接させて、前記レジストパターンを前記硬化性樹脂組成物層に埋め込むように積層する工程と、前記硬化性樹脂組成物層を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層を硬化樹脂層とする工程と、前記硬化性樹脂組成物を硬化させる前又は後に、前記硬化性樹脂組成物層もしくは前記硬化樹脂層および前記レジストパターンから前記支持体を剥離する工程と、前記レジストパターンを剥離または溶解させて、前記硬化樹脂層から前記レジストパターンを除去することにより、凹凸構造を有する硬化樹脂層を形成する工程と、前記硬化樹脂層に形成された前記凹凸構造の凹部に、めっきにより微細配線を形成する工程と、を備えることを特徴とする回路基板の製造方法、
〔3〕前記硬化性樹脂組成物が、硬化性樹脂として脂環式オレフィン重合体を含むものである前記〔1〕又は〔2〕に記載の回路基板の製造方法
〔4〕前記基板が、電気絶縁層を有し、該電気絶縁層の一方の面あるいは両方の面に導体回路層が形成されてなるものである前記〔1〕~〔3〕のいずれかに記載の回路基板の製造方法、
〔5〕前記レジストパターンを剥離または溶解させるのと同時、又は前記レジストパターンを剥離または溶解させた後に、前記硬化樹脂層の表面粗化処理行う工程をさらに備える前記〔1〕~〔4〕のいずれかに記載の回路基板の製造方法、
〔6〕前記各工程を、前記基板の両面について行い、前記基板の両面に、凹凸構造を有する硬化樹脂層の凹部に、微細配線を形成してなる層を形成する前記〔1〕~〔5〕のいずれかに記載の回路基板の製造方法、ならびに、
〔7〕前記〔1〕~〔6〕のいずれかに記載の製造方法により得られる回路基板、
が提供される。
(工程A)支持体10上にフォトレジストによりレジストパターン20を形成して、レジストパターン付支持体を得る工程(図1(A)参照)。
(工程B)前記レジストパターン付支持体の前記レジストパターン20上に、硬化性樹脂組成物からなる硬化性樹脂組成物層30を形成する工程(図1(B)参照)。
(工程C)前記硬化性樹脂組成物層30上に、基板40を積層する工程(図1(C)参照)。
(工程D)前記硬化性樹脂組成物層30を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層30を硬化樹脂層30aとする工程(図2(A)参照)。
(工程E)前記硬化性樹脂組成物を硬化させる前又は後に、前記硬化性樹脂組成物層30もしくは前記硬化樹脂層30aおよび前記レジストパターン20から支持体10を剥離する工程(図2(A)参照)。
(工程F)前記レジストパターン20を剥離または溶解させることで、前記硬化樹脂層30aから前記レジストパターン20を除去することにより、凹凸構造を有する硬化樹脂層30aを形成する工程(図2(B)参照)。
(工程G)前記硬化樹脂層30aに形成された前記凹凸構造の凹部に、めっきにより微細配線50を形成する工程(図2(C)参照)。
以下、各工程について詳述する。
工程Aは、支持体10上に、フォトレジストによりレジストパターン20を形成し、図1(A)に示すように、レジストパターン20を有する支持体10、すなわち、レジストパターン付支持体を得る工程である。
フォトマスク上へ半透過部を形成する方法としては、微細パターンをぼかして半透過部を作る方法や、任意の透過率を持った膜をさらに積層し、パターニングすることにより半透過部を形成する方法などが用いられる。
工程Bは、工程Aにより得られたレジストパターン付支持体のレジストパターン20(図1(A)参照)上に、硬化性樹脂及び硬化剤を含有する硬化性樹脂組成物からなる硬化性樹脂組成物層30を形成することで、図1(B)に示すように、レジストパターン20及び硬化性樹脂組成物層30を有する支持体10を得る工程である。硬化性樹脂組成物層30は、後述するように、硬化させて、硬化樹脂層30aとされることにより(図2(C)参照)、回路基板中において、電気絶縁層を形成することとなる層である。
工程Cは、工程Bにより得られたレジストパターン20及び硬化性樹脂組成物層30を有する支持体10の、硬化性樹脂組成物層30側の面に、基板40を積層することで、図1(C)に示すように、支持体10、レジストパターン20、硬化性樹脂組成物層30及び基板40からなる硬化前積層体を得る工程である。
工程Dは、支持体10、レジストパターン20、硬化性樹脂組成物層30及び基板40からなる硬化前積層体について、硬化性樹脂組成物層30を構成する硬化性樹脂組成物を硬化させて、図2(A)に示すように、硬化樹脂層30aとする工程である。
工程Eは、上述した工程Dにおいて、硬化性樹脂組成物層30を硬化させる前、あるいは、硬化させた後に、図2(A)に示すように、硬化前の硬化性樹脂組成物層30もしくは硬化後の硬化樹脂層30aおよびレジストパターン20から、支持体10を剥離する工程である。すなわち、本発明の製造方法においては、上述した工程Cの後、あるいは、上述した工程Dの後に、支持体10を剥離する。なお、本発明の製造方法においては、支持体10を良好に剥離するという観点より、硬化性樹脂組成物層30を硬化させる前、硬化性樹脂組成物層30を硬化させた後のいずれタイミングに、支持体10を剥離する場合においても、積層体を室温まで冷却した後に、支持体10を剥離することが望ましい。
工程Fは、レジストパターン20を剥離または溶解し、硬化樹脂層30aからレジストパターン20を除去することにより、図2(B)に示すように、凹凸構造を有する硬化樹脂層30aを有する基板40を形成する工程である。
レジストパターン20を溶解する方法としては、特に限定されないが、レジストパターン20、硬化樹脂層30aを有する基板40を、レジストパターン20を溶解可能な溶液に浸漬する方法などが挙げられる。レジストパターン20を溶解するための溶液としては、たとえば、過マンガン酸塩などの酸化性化合物の溶液(デスミア液)などを用いることができる。具体的には、過マンガン酸ナトリウム濃度60g/リットル、水酸化ナトリウム濃度28g/リットルになるように調整した60~80℃の水溶液に、レジストパターン20、硬化樹脂層30aを有する基板40を、1~50分間揺動浸漬することにより、レジストパターン20を溶解させる方法などを用いることができる。
また、レジストパターン20を剥離液またはデスミア液に浸漬処理する際に、超音波を併用することもできる。
工程Gは、硬化樹脂層30aに形成された凹凸構造の凹部に、図2(C)に示すように、めっきにより微細配線50を形成することで、硬化樹脂層30a、導体からなる微細配線50を備えた基板40からなる回路基板を得る工程である。
したがって、この方法により形成される微細配線50は、通常、金属薄膜と、その上に成長させためっきとから構成されるものとなる。
(工程A)支持体10上にフォトレジストによりレジストパターン20を形成して、レジストパターン付支持体を得る工程(図3(A)参照)。
(工程B’)硬化性樹脂組成物からなる硬化性樹脂組成物層30を、基板40上に形成することで、硬化性樹脂組成物基板を得る工程(図3(A)参照)。
(工程C’)前記レジストパターン付支持体における前記レジストパターン20と、前記硬化性樹脂組成物基板における前記硬化性樹脂組成物層30とを当接させて、前記レジストパターン20を前記硬化性樹脂組成物層30に埋め込むように積層する工程(図3(B)参照)。
(工程D)前記硬化性樹脂組成物層30を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層30を硬化樹脂層30aとする工程(図2(A)参照)。
(工程E)前記硬化性樹脂組成物を硬化させる前又は後に、前記硬化性樹脂組成物層30もしくは前記硬化樹脂層30aおよび前記レジストパターン20から支持体10を剥離する工程(図2(A)参照)。
(工程F)前記レジストパターン20を剥離または溶解させることで、前記硬化樹脂層30aから前記レジストパターン20を除去することにより、凹凸構造を有する硬化樹脂層30aを形成する工程(図2(B)参照)。
(工程G)前記硬化樹脂層30aに形成された前記凹凸構造の凹部に、めっきにより微細配線50を形成する工程(図2(C)参照)。
なお、上記工程A、工程D~工程Gは、上述した方法と同様であるため、以下においては、工程B’、工程C’について、詳細に説明する。
工程B’は、硬化性樹脂組成物からなる硬化性樹脂組成物層30を、基板40上に形成することで、図3(A)に示す硬化性樹脂組成物基板を得る工程である。
工程C’は、上述した工程Aと同様にして得られたレジストパターン付支持体(レジストパターン20を備える支持体10)における前記レジストパターン20と、前記硬化性樹脂組成物基板(硬化性樹脂組成物層30を備える基板40)における前記硬化性樹脂組成物層30とを当接させて、前記レジストパターン20を前記硬化性樹脂組成物層30に埋め込むように積層することで、図3(B)に示すように、支持体10、レジストパターン20、硬化性樹脂組成物層30及び基板40からなる硬化前積層体を得る工程である。
(成形型の作製)
離型ポリエチレンテレフタレート(NSL-6、藤森工業社製)に、厚さ15μmのドライフィルムレジスト(SUNFORT UFG158、旭化成イーマテリアルズ社製)を、積層することにより、離型ポリエチレンテレフタレートと、ドライフィルムレジストとからなる積層体を得た。なお、積層は、離型ポリエチレンテレフタレートを50℃に加温した状態とし、ロールラミネータを用いて、ラミネート速度1.5m/分、ロール圧力:0.3MPa、ロール温度105℃の条件にて行った。次いで、得られた積層体について、石英ガラスクロムマスクを使用して、露光、現像を行うことにより、図3(A)に示すような支持体10上に、レジストパターン20が形成されてなる成形型(レジストパターン付支持体)を得た。なお、この際における露光条件は、コンタクト露光装置を用いて、露光量60mJ/cm2の条件とし、また、現像は、1%の炭酸ナトリウム水溶液を用い、温度30℃、30秒の条件で行った。また、成形型としては、L/S=3μm/3μm、高さ15μmの平行ラインパターンが形成可能なものを作製した。すなわち、図3(A)に示す例では、レジストパターン20の高さをそれぞれ異ならせることにより、一部のレジストパターン20が基板40と接する例を示しているが、本実施例では、図4(A)、図4(B)に示すように、レジストパターン20の高さを全て15μmとし、基板40とは接しないようにした。
一方、上記とは別に、コア基板としてのFR-4材(ガラスエポキシ樹脂基板)の両面に、ビルドアップフィルム(ZS-100、日本ゼオン社製、カルボキシル基含有脂環式オレフィン重合体を主成分とする硬化性樹脂組成物フィルム)を積層してなる、ビルドアップフィルム-基板積層体を準備した。なお、ビルドアップフィルム-基板積層体は、図3(A)に示す硬化性樹脂組成物層30と基板40とからなる積層体であり、ビルドアップフィルムが、硬化性樹脂組成物層30に相当し、コア基板としてのFR-4材が、基板40に相当する。なお、図3(A)に示す例では、基板40の片面にのみ、硬化性樹脂組成物層30が形成されている例を示しているが、本実施例では、基板40の両面に、硬化性樹脂組成物層30を形成したものを用いた。
そして、上記にて得られた成形型を2つ準備し、コア基板の両面にそれぞれ積層されたビルドアップフィルムに対し、準備した2つの成形型(レジストパターン付支持体)の、レジストパターン20が形成されてなる面が対向するように、これらを貼り合わせることで、埋込積層させることで、図3(B)に示すような支持体10、レジストパターン20、硬化性樹脂組成物層30及び基板40からなる硬化前積層体を得た。なお、図3(B)に示す例では、基板40の片面にのみ、支持体10、レジストパターン20、及び硬化性樹脂組成物層30が形成されている例を示しているが、本実施例では、基板40の両面に、支持体10、レジストパターン20、及び硬化性樹脂組成物層30を形成した。また、積層は、ラミネート装置として、MVLP500(名機製作所)を用い、真空引きを30秒行い、90℃、0.7MPa、30秒の条件でラバープレスを行い、次いで、100℃、0.9MPaの、60秒の条件でホットプレスすることにより行った。
次いで、上記にて得られた硬化前積層体を、180℃で、30分間加熱することで、硬化性樹脂組成物層30を構成するビルドアップフィルムを硬化させ、次いで、室温まで冷却させた後に、支持体10としての離型ポリエチレンテレフタレートを剥離することで、図2(A)に示すようなレジストパターン20、硬化樹脂層30a及び基板40からなる硬化積層体を得た。なお、図2(A)に示す例では、基板40の片面にのみ、レジストパターン20、及び硬化樹脂層30aが形成されている例を示しているが、本実施例では、基板40の両面に、レジストパターン20、及び硬化樹脂層30aを形成した。
得られた硬化積層体を、剥離液(「レジストストリップIC-1」、アトテック社製)の60℃の水溶液に15分間、超音波(130W、42kHz)を当てながら、揺動浸漬した後、水洗した。
得られた硬化積層体を、膨潤液(「スウェリング ディップ セキュリガント P」、アトテック社製、「セキュリガント」は登録商標)500mL/L、水酸化ナトリウム3g/Lになるように調製した60℃の水溶液に15分間揺動浸漬した後、水洗した。
次いで、過マンガン酸塩の水溶液(「コンセントレート コンパクト CP」、アトテック社製)640mL/L、水酸化ナトリウム濃度40g/Lになるように調製した80℃の水溶液に、膨潤処理を行なった積層体について15分間揺動浸漬をした後、水洗した。この酸化処理工程により、レジストパターン20を除去することにより、図2(B)に示すような硬化樹脂層30a及び基板40からなる積層体を得た。なお、図2(B)に示す例では、基板40の片面にのみ、硬化樹脂層30aが形成されている例を示しているが、本実施例では、基板40の両面に、硬化樹脂層30aを形成した。また、酸化処理工程においては、レジストパターン20の除去とともに、硬化樹脂層30aの表面粗化も行った。
続いて、硫酸ヒドロキシアミン水溶液(「リダクション セキュリガント P500」、アトテック社製、「セキュリガント」は登録商標)100mL/L、硫酸35mL/Lになるように調製した40℃の水溶液に、酸化処理を行なった積層体を5分間揺動浸漬し、中和還元処理をした後、水洗した。
次いで、クリーナー・コンディショナー水溶液(「アルカップ MCC-6-A」、上村工業社製、「アルカップ」は登録商標)を濃度50ml/Lとなるよう調製した50℃の水溶液に、中和還元処理を行なった積層体を5分間揺動浸漬し、クリーナー・コンディショナー処理を行った。次いで40℃の水洗水に積層体を1分間揺動浸漬した後、水洗した。
次いで、硫酸濃度20g/L、過硫酸ナトリウム100g/Lとなるように調製した水溶液に、クリーナー・コンディショナー処理を行った積層体を、室温にて2分間揺動浸漬しソフトエッチング処理を行った後、水洗した。
次いで、硫酸濃度100g/Lなるよう調製した水溶液に、ソフトエッチング処理を行なった積層体を、室温にて1分間揺動浸漬し酸洗処理を行った後、水洗した。
次いで、アルカップ アクチベータ MAT-1-A(商品名、上村工業社製、「アルカップ」は登録商標)が200mL/L、アルカップ アクチベータ MAT-1-B(上商品名、村工業社製、「アルカップ」は登録商標)が30mL/L、水酸化ナトリウムが0.35g/Lになるように調製した60℃のPd塩含有めっき触媒水溶液に、酸洗処理を行なった積層体を5分間揺動浸漬した後、水洗した。
続いて、アルカップ レデューサ- MAB-4-A(商品名、上村工業社製、「アルカップ」は登録商標)が20mL/L、アルカップ レデューサ- MAB-4-B(商品名、上村工業社製、「アルカップ」は登録商標)が200mL/Lになるように調製した水溶液に、触媒付与処理を行なった積層体を35℃で、3分間揺動浸漬し、めっき触媒を還元処理した後、水洗した。
次いで、アルカップ アクセレレーター MEL-3-A(商品名、上村工業社製、「アルカップ」は登録商標)が50mL/Lになるように調製した水溶液に、活性化処理を行なった積層体を室温で、1分間浸漬した。
このようにして得られた積層体を、スルカップ PEA-6-A(商品名、上村工業社製、「スルカップ」は登録商標)100mL/L、スルカップ PEA-6-B-2X(商品名、上村工業社製)50mL/L、スルカップ PEA-6-C(商品名、上村工業社製)14mL/L、スルカップ PEA-6-D(商品名、上村工業社製)15mL/L、スルカップ PEA-6-E(商品名、上村工業社製)50mL/L、37%ホルマリン水溶液5mL/Lとなるように調製した無電解銅めっき液に空気を吹き込みながら、温度36℃で、20分間浸漬して無電解銅めっき処理して積層体表面(硬化樹脂層30aの表面)に無電解めっき膜を形成した。次いで、空気雰囲気下において150℃で30分間アニール処理を行った。
次いで、PB242D(商品名、荏原ユージライト社製)が100g/Lになるように調製した50℃の水溶液に、アニール処理が施された積層体を、5分間浸漬し脱脂処理を行い、次いで、硫酸濃度100g/Lになるよう調製した水溶液に、脱脂処理を行った積層体を、室温にて2分間浸漬し酸洗処理を行った後、水洗した。
次いで、硫酸銅200g/L、硫酸50g/L、38%の濃塩酸0.05mL/L、FVF-1A(商品名、上村工業社製)1mL/L、FVF-B(商品名、上村工業社製)10mL/L、FVF-R(商品名、上村工業社製)2mL/Lとなるように調製した水溶液(電解液)に空気を吹き込みながら、室温で、脱脂・酸洗処理を行った積層体を陰極側、含リン銅板を陽極側に浸漬・設置し、直流電源装置で通電し、電解銅めっきを施し、無電解めっき処理により形成された金属層上に電解銅めっき膜を形成した。レジストパターン20の除去により形成された硬化樹脂層30aにおける凹部内に無電解銅めっきが十分に充填された際(無電解銅めっきのフィリング時)に、当該凹部以外の部分に形成された無電解銅めっき層の厚みは2μmであった。
前記凹部以外の部分に形成された無電解銅めっき層(前述の厚み2μmの部分)をハイパーエッチ「HE-500」(商品名、エバラユージライト社製)を用いて、スプレー処理にてエッチングをし、酸洗処理を行った後、水洗した。
次いで、AT-21(商品名、上村工業社製)1mL/Lとなるように調製した水溶液に、室温にて1分間浸漬し防錆処理を行った後、空気中にて、180℃で60分間アニール処理をすることで、図2(C)に示すような硬化樹脂層30a、微細配線50、及び基板40からなる回路基板を得た。
20…レジストパターン
30…硬化性樹脂組成物層
30a…硬化樹脂層
40…基板
50…微細配線
Claims (7)
- 支持体上にフォトレジストによりレジストパターンを形成して、レジストパターン付支持体を得る工程と、
前記レジストパターン付支持体の前記レジストパターン上に、硬化性樹脂組成物からなる硬化性樹脂組成物層を形成する工程と、
前記硬化性樹脂組成物層上に、基板を積層する工程と、
前記硬化性樹脂組成物層を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層を硬化樹脂層とする工程と、
前記硬化性樹脂組成物を硬化させる前または後に、前記硬化性樹脂組成物層もしくは前記硬化樹脂層および前記レジストパターンから前記支持体を剥離する工程と、
前記レジストパターンを剥離または溶解させて、前記硬化樹脂層から前記レジストパターンを除去することにより、凹凸構造を有する硬化樹脂層を形成する工程と、
前記硬化樹脂層に形成された前記凹凸構造の凹部に、めっきにより微細配線を形成する工程と、
を備えることを特徴とする回路基板の製造方法。 - 支持体上にフォトレジストによりレジストパターンを形成して、レジストパターン付支持体を得る工程と、
硬化性樹脂組成物からなる硬化性樹脂組成物層を、基板上に形成することで、硬化性樹脂組成物基板を得る工程と、
前記レジストパターン付支持体における前記レジストパターンと、前記硬化性樹脂組成物基板における前記硬化性樹脂組成物層とを当接させて、前記レジストパターンを前記硬化性樹脂組成物層に埋め込むように積層する工程と、
前記硬化性樹脂組成物層を構成する前記硬化性樹脂組成物を硬化させて、当該硬化性樹脂組成物層を硬化樹脂層とする工程と、
前記硬化性樹脂組成物を硬化させる前又は後に、前記硬化性樹脂組成物層もしくは前記硬化樹脂層および前記レジストパターンから前記支持体を剥離する工程と、
前記レジストパターンを剥離または溶解させて、前記硬化樹脂層から前記レジストパターンを除去することにより、凹凸構造を有する硬化樹脂層を形成する工程と、
前記硬化樹脂層に形成された前記凹凸構造の凹部に、めっきにより微細配線を形成する工程と、
を備えることを特徴とする回路基板の製造方法。 - 前記硬化性樹脂組成物が、硬化性樹脂として脂環式オレフィン重合体を含むものである請求項1又は2に記載の回路基板の製造方法。
- 前記基板が、電気絶縁層を有し、該電気絶縁層の一方の面あるいは両方の面に導体回路層が形成されてなるものである請求項1~3のいずれかに記載の回路基板の製造方法。
- 前記レジストパターンを剥離または溶解させるのと同時、又は前記レジストパターンを剥離または溶解させた後に、前記硬化樹脂層の表面粗化処理を行う工程をさらに備える請求項1~4のいずれかに記載の回路基板の製造方法。
- 前記各工程を、前記基板の両面について行い、前記基板の両面に、凹凸構造を有する硬化樹脂層の凹部に、微細配線を形成してなる層を形成する請求項1~5のいずれかに記載の回路基板の製造方法。
- 請求項1~6のいずれかに記載の製造方法により得られる回路基板。
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US7351660B2 (en) * | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
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US10656521B2 (en) | 2014-11-26 | 2020-05-19 | Hitachi Chemical Company, Ltd. | Photosensitive resin composition, photosensitive element, cured product, semiconductor device, method for forming resist pattern, and method for producing circuit substrate |
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