WO2014017127A1 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- WO2014017127A1 WO2014017127A1 PCT/JP2013/060335 JP2013060335W WO2014017127A1 WO 2014017127 A1 WO2014017127 A1 WO 2014017127A1 JP 2013060335 W JP2013060335 W JP 2013060335W WO 2014017127 A1 WO2014017127 A1 WO 2014017127A1
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- 238000003384 imaging method Methods 0.000 title claims abstract description 65
- 238000005070 sampling Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 102100029768 Histone-lysine N-methyltransferase SETD1A Human genes 0.000 description 13
- 101000865038 Homo sapiens Histone-lysine N-methyltransferase SETD1A Proteins 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 9
- 238000005096 rolling process Methods 0.000 description 8
- 101150117538 Set2 gene Proteins 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Definitions
- the present invention relates to a solid-state imaging device.
- the solid-state imaging device includes a light receiving unit including a plurality of pixel units arranged one-dimensionally or two-dimensionally, and each pixel unit includes a photodiode that generates an amount of charge corresponding to the amount of incident light. .
- a solid-state imaging device can acquire a one-dimensional or two-dimensional image.
- a solid-state imaging device is required to perform high-precision imaging by removing noise components from data output from each pixel unit.
- Patent Document 1 An invention intended to enable high-precision imaging is disclosed in Patent Document 1.
- the solid-state imaging device of the invention disclosed in this document obtains the difference between the data of only the noise component output from the pixel unit and the data in which the noise component is superimposed on the signal component output from the pixel unit, It is said that signal component data from which noise components have been removed can be obtained, and high-accuracy imaging can be performed.
- the solid-state imaging device may be required to perform high-speed imaging in addition to the case where high-accuracy imaging is required.
- the solid-state imaging device of the invention disclosed in Patent Document 1 has a limit for high-speed imaging. In order to enable both high-accuracy imaging and high-speed imaging, it is conceivable to provide two circuits for reading data from the pixel portion. In this case, however, the circuit scale becomes large.
- the present invention has been made to solve the above-described problems, and provides a solid-state imaging device capable of both high-precision imaging and high-speed imaging and suppressing the increase in circuit scale. Objective.
- the solid-state imaging device of the present invention is (1) A photodiode that includes M ⁇ N pixel portions P 1,1 to P M, N arranged in M rows and N columns, and each pixel portion P m, n generates an amount of charge corresponding to the amount of incident light; A charge accumulating unit for accumulating the charge, a light receiving unit for outputting data corresponding to the amount of accumulated charge in the charge accumulating unit, and (2) 2N hold circuits H 1,1 to H 2, N Each hold circuit H 1, n , H 2, n samples data output from any one of the M pixel units P 1, n to P M, n in the n-th column of the light receiving unit.
- M is an integer greater than or equal to 1
- N is an integer greater than or equal to 2
- m is an integer greater than or equal to 1 and less than or equal to M
- n is an integer greater than or equal to 1 and less than or equal to N.
- the control means (a) data in a first mode of operation, the hold circuit H 1, n of the holding portion, with respect to H 2, n, alternately parallel to to the operation The sampling unit and the data output are alternately performed, and the readout unit outputs the pixel unit P m, n based on the data alternately output from the holding circuits H 1, n , H 2, n of the holding unit. (B) In the second operation mode, the data of the noise component is output to the pixel unit P m, n of the light receiving unit at the first time, and the data corresponding to the amount of light incident on the photodiode is output.
- hold circuit H 1, n of the holding portion To perform, with respect to the reading unit, the hold circuit H 1, n of the holding portion, corresponding to the amount of incident light on the H 2, n pixel unit P m based on the difference between data output from each, n photodiode It is characterized by outputting data.
- the control unit in the first operation mode, is configured to perform a partial row of the N columns of the light receiving unit with respect to the hold circuits H 1, n , H 2, n of the holding unit. parallel to by the operation to perform the alternate data output together to perform data sampling alternately, with respect to the reading unit, the hold circuits H 1 of the holding portion, n, the data output alternately from H 2, n Based on this, it is preferable to output data corresponding to the amount of light incident on the photodiode of the pixel portion P m, n .
- the reading unit has (1) an inverting input terminal, a non-inverting input terminal, an inverting output terminal, and a non-inverting output terminal, and holding circuits H 1, n , H 2, n of the holding unit.
- a second capacitor element provided between the non-inverting input terminal and the inverting output terminal of the amplifier, and (4) an inverting input terminal and a non-inverting output terminal of the amplifier, respectively. It is preferable to include first initialization means for initializing the potential of the amplifier and (5) second initialization means for initializing the potentials of the non-inverting input terminal and the inverting output terminal of the amplifier.
- the reading unit has a first input terminal and a second input terminal, and inputs data output from one of the non-inverting output terminal and the inverting output terminal of the amplifier to the first input terminal and outputs from the other. It is preferable to further include an AD converter that inputs data to the second input terminal and outputs a digital value corresponding to the difference between the data input to the first input terminal and the second input terminal. It is preferable that the reading unit further includes an output switching unit that switches connection between the non-inverting output terminal and the inverting output terminal of the amplifier and the first input terminal and the second input terminal of the AD conversion unit. Further, the reading unit may hold circuit H 1, n of the holding portion, H 2, n and the amplifier also inverting the input terminal and switching the connection between the non-inverting input terminal further includes an input switching section is suitable.
- the solid-state imaging device of the present invention can perform both high-precision imaging and high-speed imaging, and can suppress an increase in circuit scale.
- FIG. 1 is a diagram illustrating a configuration of a solid-state imaging device 1 according to the present embodiment.
- FIG. 2 is a diagram illustrating a circuit configuration of each of the pixel unit P m, n , the hold circuits H 1, n , H 2, n, and the reading unit 50 of the solid-state imaging device 1 of the present embodiment.
- FIG. 3 is a diagram illustrating a circuit configuration of the row selection unit 20 of the solid-state imaging device 1 of the present embodiment.
- FIG. 4 is a diagram illustrating a circuit configuration of the column selection unit 40 of the solid-state imaging device 1 of the present embodiment.
- FIG. 5 is a diagram for explaining the outline of the operation of the solid-state imaging device 1 of the present embodiment.
- FIG. 1 is a diagram illustrating a configuration of a solid-state imaging device 1 according to the present embodiment.
- FIG. 2 is a diagram illustrating a circuit configuration of each of the pixel unit P m, n , the hold circuits H 1, n
- FIG. 6 is a timing chart showing the operation (rolling shutter system) in the first operation mode of the solid-state imaging device 1 of the present embodiment.
- FIG. 7 is a timing chart showing the operation (global shutter method) in the first operation mode of the solid-state imaging device 1 of the present embodiment.
- FIG. 8 is a timing chart showing the operation (rolling shutter method) in the second operation mode of the solid-state imaging device 1 of the present embodiment.
- FIG. 9 is a diagram illustrating a modification of the circuit configuration of the solid-state imaging device 1 of the present embodiment.
- FIG. 1 is a diagram illustrating a configuration of a solid-state imaging device 1 of the present embodiment.
- the solid-state imaging device 1 includes a light receiving unit 10, a row selecting unit 20, a holding unit 30, a column selecting unit 40, a reading unit 50, and a control unit 60.
- the light receiving unit 10 includes M ⁇ N pixel units P 1,1 to P M, N.
- the M ⁇ N pixel portions P 1,1 to P M, N have a common configuration and are arranged in M rows and N columns.
- Each pixel unit P m, n is located in the m-th row and the n-th column.
- M is an integer of 1 or more
- N is an integer of 2 or more
- m is an integer of 1 to M
- n is an integer of 1 to N.
- M 1, 1 ⁇ N pixel portions P 1,1 to P 1, N are arranged one-dimensionally.
- M ⁇ 2 M ⁇ N pixel portions P 1,1 to P M, N are two-dimensionally arranged.
- Each pixel unit P m, n includes a photodiode that generates an amount of charge corresponding to the amount of incident light, and a charge storage unit that stores the charge.
- Each pixel unit P m, n accumulates charges generated in the photodiode in the charge accumulation unit based on various control signals received from the row selection unit 20 via the control signal line, and accumulates in the charge accumulation unit. and it outputs the data corresponding to the charge amount to the read signal line L n.
- the row selection unit 20 outputs various control signals for controlling the operation of each pixel unit P m, n of the light receiving unit 10. More specifically, the row selection unit 20 accumulates the charges generated by the photodiodes for each pixel unit P m, n in the charge accumulation unit. In addition, the row selection unit 20 selects each row in the light receiving unit 10 and causes each pixel unit P m, n to output data corresponding to the accumulated charge amount in the charge accumulation unit to the read signal line L n for each row. .
- the holding unit 30 includes 2N hold circuits H 1,1 to H 2, N.
- the 2N hold circuits H 1,1 to H 2, N have a common configuration.
- the hold circuits H 1, n , H 2, n are connected to the read signal line L n and read signals from the pixel units P m, n in the m-th row in the light receiving unit 10 selected by the row selection unit 20. samples and holds the data output to the line L n.
- the hold circuit H1 , n outputs the held data to the signal read line Hline1.
- the hold circuit H2 , n outputs the held data to the signal read line Hline2.
- the operation timings of the hold circuits H1 , n , H2 , n are different from each other.
- the column selection unit 40 outputs various control signals for controlling operations of the 2N hold circuits H 1,1 to H 2, N of the holding unit 30. More specifically, the column selection unit 40 causes each hold circuit to perform data sampling at a predetermined time and output data at a predetermined time.
- the reading unit 50 receives data output from one or both of the hold circuits H 1, n , H 2, n of the holding unit 40, and based on the input data, the photodiode of the pixel unit P m, n Data Dout corresponding to the amount of light incident on is output.
- the control unit 60 controls operations of the row selection unit 20, the holding unit 30, the column selection unit 40, and the reading unit 50.
- the control unit 60 controls the operation of the light receiving unit 10 by controlling the operation of the row selection unit 20, and controls the operation of the holding unit 30 by controlling the operation of the column selection unit 40.
- FIG. 2 is a diagram illustrating a circuit configuration of each of the pixel unit P m, n , the hold circuits H 1, n , H 2, n, and the reading unit 50 of the solid-state imaging device 1 of the present embodiment.
- the pixel unit P m, n in the m- th row and the n-th column among the M ⁇ N pixel units P 1,1 to P M, N is representatively shown and held.
- pixel section P m, hold circuit H 1, n to be connected to the n, H 2, n is shown by the reading signal line L n in section 30.
- Each pixel unit P m, n is of the APS (Active Pixel Sensor) type and includes a photodiode PD and five MOS transistors T1, T2, T3, T4, and T5. As shown in this figure, the transistor T1, the transistor T2, and the photodiode PD are connected in series, the reference voltage Vr is input to the drain terminal of the transistor T1, and the anode terminal of the photodiode PD is grounded. Has been. A connection point between the transistor T1 and the transistor T2 is connected to the gate terminal of the transistor T3 through the transistor T5.
- the reference voltage Vr is input to the drain terminal of the transistor T3.
- the source terminal of the transistor T3 is connected to the drain terminal of the transistor T4.
- the source terminal of each pixel portion P m, transistors n T4 is connected to the read signal line L n.
- the read signal line L n is connected a constant current source.
- the gate terminal of the transistor T1 of each pixel portion P m, n for the reset, Reset (m) signal output from the row selecting section 20 is input.
- the Trans (m) signal output from the row selection unit 20 is input to the gate terminal of the transfer transistor T2 of each pixel unit Pm, n .
- the Hold (m) signal output from the row selection unit 20 is input to the gate terminal of the holding transistor T5 of each pixel unit Pm, n .
- the Address (m) signal output from the row selection unit 20 is input to the gate terminal of the output selection transistor T4 of each pixel unit P m, n .
- control signals (Reset (m) signal, Trans (m) signal, Hold (m) signal, Address (m) signal) are transmitted from the row selecting unit 20 to the N pixel units P m, 1 to m-th row. Commonly input to P m, N.
- the junction capacitance portion of the photodiode PD is discharged, and the diffusion region (charge) connected to the gate terminal of the transistor T3.
- the storage part) is discharged.
- the Trans (m) signal is at a low level, the charge generated in the photodiode PD is accumulated in the junction capacitor portion.
- the Reset (m) signal is at a low level and the Trans (m) signal and the Hold (m) signal are at a high level, the charge accumulated in the junction capacitance portion of the photodiode PD is the gate terminal of the transistor T3. Is transferred to and accumulated in a diffusion region (charge accumulating portion) connected to.
- the hold circuit H 1, n includes a capacitive element C 3 and four switches SW 31 to SW 34 .
- the hold circuit H 1, n one end of the capacitor element C 3 is connected to the read signal line L n via the switch SW 31, the reference voltage Vref1 through the switch SW 32 is inputted.
- the other end of the capacitive element C 3 is connected to the read signal line Hline1 via the switch SW 33, the reference voltage Vref2 via the switch SW 34 is inputted.
- the switches SW 31 and SW 34 open and close according to the level of the Set1 signal output from the control unit 60.
- the switch SW 32 opens and closes according to the level of the Hshiftb1 (n) signal output from the column selector 40.
- Switch SW 33 opens and closes according to the level of Hshifta1 (n) signal output from the column selecting section 40.
- the Set1 signal is input in common to the N hold circuits H 1,1 to H 1, N.
- the Set1 signal changes from high level to low level at a predetermined time.
- the switch SW 31, SW 34 turns from the closed state to the open state, the data sampling and storing the amount of charge corresponding to the data which has been outputted to the read signal line L n at that time in the capacitor C 3 .
- the hold circuit H 1, n is turned to the closed state the switch SW 33 in turn Hshifta1 (n) signal is at a high level, the switch SW 32 in turn Hshiftb1 (n) signal is at the high level turns to the closed state , and it outputs the data held in the capacitor C 3 to the read signal line Hline1.
- the hold circuit H 2, n also includes a capacitive element C 3 and four switches SW 31 to SW 34 .
- the hold circuit H 2, n one end of the capacitor element C 3 is connected to the read signal line L n via the switch SW 31, the reference voltage Vref1 through the switch SW 32 is inputted.
- the other end of the capacitive element C 3 is connected to the read signal line Hline2 via the switch SW 33, the reference voltage Vref2 via the switch SW 34 is inputted.
- the switches SW 31 and SW 34 open and close according to the level of the Set2 signal output from the control unit 60.
- the switch SW 32 opens and closes according to the level of the Hshiftb2 (n) signal output from the column selector 40.
- the switch SW 33 opens and closes according to the level of the Hshifta2 (n) signal output from the column selector 40.
- the Set2 signal is input in common to the N hold circuits H 2,1 to H 2, N.
- Hold circuit H 2, n when Hshifta2 (n) signal and Hshiftb2 (n) signal switch SW 32, SW 33 is opened at a low level, Set2 signal at a predetermined time is turned from the high level to the low level
- the switches SW 31 and SW 34 change from the closed state to the open state, data sampling is performed by accumulating an amount of charge corresponding to the data output to the read signal line L n at that time in the capacitive element C 3. .
- the hold circuit H 2, n is turned to the closed state the switch SW 33 in turn Hshifta2 (n) signal is at a high level, the switch SW 32 in turn Hshiftb2 (n) signal is at the high level turns to the closed state , and it outputs the data held in the capacitor C 3 to the read signal line Hline2.
- the reading unit 50 includes a full differential amplifier A 5 , capacitive elements C 51 and C 52 , switches SW 51 to SW 54 , switches SW 55 to SW 58 and an AD conversion unit 51.
- Amplifier A 5 represents, has an inverting input terminal and non-inverting input terminal, an inverting output terminal and the non-inverting output terminal.
- the capacitor C 51 is provided between the inverting input terminal and the non-inverting output terminal of the amplifier A 5.
- the capacitor C 52 is provided between the non-inverting input terminal of the amplifier A 5 and the inverting output terminal.
- the capacitance values of the capacitive elements C 51 and C 52 are equal to each other.
- Amplifier A 5 represents, enter the data outputted from the hold circuit H 1, n to the read signal line Hline1 to the inverting input terminal, a non-inverting input terminal of the data output from the hold circuit H 2, n to the read signal line Hline2 To enter.
- Inverting input terminal of amplifier A 5 are, the reference potential Vref2 via the switch SW 51 is inputted.
- the non-inverting output terminal of the amplifier A 5 are, the reference potential Vref2 via the switch SW 52 is inputted.
- the non-inverting input terminal of the amplifier A 5 are, the reference potential Vref2 via the switch SW 53 is inputted.
- Inverting output terminal of the amplifier A 5 are, the reference potential Vref2 via the switch SW 54 is inputted.
- the switches SW 51 and SW 52 can be closed when the Freset signal supplied from the control unit 60 is at a high level, and initialize the potentials of the inverting input terminal and the non-inverting output terminal of the amplifier A 5 .
- the switches SW 53 and SW 54 are closed when the Freset signal supplied from the control unit 60 is at a high level, and can initialize the potentials of the non-inverting input terminal and the inverting output terminal of the amplifier A 5 .
- AD converter 51 first has an input terminal 51 1 and the second input terminal 51 2, a digital value Dout corresponding to the difference between data input to the first input terminal 51 1 and the second input terminal 51 2, respectively Is output.
- Switch SW 55 is provided between the first input terminal 51 1 of the non-inverted output terminal and the AD conversion unit 51 of the amplifier A 5.
- Switch SW 56 is provided between the second input terminal 51 2 of the non-inverted output terminal and the AD conversion unit 51 of the amplifier A 5.
- Switch SW 57 is provided between the first input terminal 51 1 of the inverted output terminal and the AD conversion unit 51 of the amplifier A 5.
- Switch SW 58 is provided between the second input terminal 51 2 of the inverted output terminal and the AD conversion unit 51 of the amplifier A 5.
- the switches SW 55 and SW 58 are closed when the S1 signal supplied from the control unit 60 is at a high level.
- the switches SW 56 and SW 57 are closed when the S2 signal supplied from the control unit 60 is at a high level.
- the other is at a low level, and when one of the switches SW 55 and SW 58 and the switches SW 56 and SW 57 is in a closed state, the other is in an open state.
- Switches SW 55 ⁇ SW 58 is an output switching section for switching the connection between the non-inverting output terminal and the inverted output terminal and the first input terminal 51 1 and the second input terminal 51 2 of the AD conversion section 51 of the amplifier A 5 Constitute.
- FIG. 3 is a diagram illustrating a circuit configuration of the row selection unit 20 of the solid-state imaging device 1 of the present embodiment.
- the row selection unit 20 inputs a row selection signal, a Reset signal, a Trans signal, a Hold signal, and an Address signal output from the control unit 60.
- the row selection signal is a signal for selecting a row in which the charge accumulation operation and the data output operation are performed among the M rows of the light receiving unit 10.
- the decoder 21 outputs signals vshift (1) to vshift (M) whose levels are set based on the input row selection signal. If the row selected by the input row selection signal is the m-th row, the vshift (m) signal is selectively set to the high level.
- the NAND circuit 22 and the INV circuit 26 output a Reset (m) signal that is a logical product of the vshift (m) signal and the Reset signal.
- the NAND circuit 23 and the INV circuit 27 output a Trans (m) signal that is a logical product of the vshift (m) signal and the Trans signal.
- the NAND circuit 24 and the INV circuit 28 output a Hold (m) signal that is a logical product of the vshift (m) signal and the Hold signal.
- the NAND circuit 25 and the INV circuit 29 output an Address (m) signal that is a logical product of the vshift (m) signal and the Address signal.
- FIG. 4 is a diagram illustrating a circuit configuration of the column selection unit 40 of the solid-state imaging device 1 of the present embodiment.
- the column selection unit 40 receives the column selection signal, Hshifta1 signal, Hshiftb1 signal, Hshifta2 signal, and Hshiftb2 signal output from the control unit 60.
- the column selection signal is a signal for selecting a column on which data output is performed among the N columns of the holding unit 30.
- the decoder 41 outputs signals hshift (1) to hshift (N) whose levels are set based on the input column selection signal. If the column selected by the input column selection signal is the nth column, the hshift (n) signal is selectively set to the high level.
- N sets of NAND circuits 42 to 45 and INV circuits 46 to 49 are provided, but only the set to which the hshift (n) signal is input is shown in FIG.
- the NAND circuit 42 and the INV circuit 46 output an Hshifta1 (n) signal that is a logical product of the hshift (n) signal and the Hshifta1 signal.
- the NAND circuit 43 and the INV circuit 47 output an Hshiftb1 (n) signal that is a logical product of the hshift (n) signal and the Hshiftb1 signal.
- the NAND circuit 44 and the INV circuit 48 output an Hshifta2 (n) signal that is a logical product of the hshift (n) signal and the Hshifta2 signal.
- the NAND circuit 45 and the INV circuit 49 output an Hshiftb2 (n) signal that is a logical product of the hshift (n) signal and the Hshiftb2 signal.
- FIG. 5 is a diagram for explaining the outline of the operation of the solid-state imaging device 1 of the present embodiment.
- the solid-state imaging device 1 has at least a first operation mode and a second operation mode in which the control modes by the control unit 60 are different from each other.
- “transfer” means that the data output from the pixel unit P m, n in a certain row of the light receiving unit 10 is sampled by the hold circuit H 1, n or H 2, n of the holding unit 30.
- “Reading” indicates that the data held by the holding circuit H 1, n or H 2, n of the holding unit 30 is read as data Dout by the reading unit 50.
- the hold circuits H 1, n , H 2, n of the holding unit 30 operate in parallel, alternately perform data sampling, and alternately output data. I do. That is, a period hold circuit H 1, n, where one of H 2, n is the data sampling, and the period during which the other is a data output, and at least partially overlap each other.
- a period hold circuit H 1, n where one of H 2, n is the data sampling, and the period during which the other is a data output, and at least partially overlap each other.
- either the S1 signal or the S2 signal goes high, and the switches SW 55 and SW 58 and the switches SW 56 and SW 57 Any of these will be closed.
- the reading unit 50 performs data corresponding to the amount of light incident on the photodiode of the pixel unit P m, n based on the data alternately output from the hold circuits H 1, n , H 2, n of the holding unit 30. Dout is output.
- the pixel unit P m, n of the light receiving unit 10 outputs data of noise components at the first time and data corresponding to the accumulated charge amount at the second time. Is output.
- One of the hold circuits H1 , n , H2 , n of the holding unit 30 performs data sampling at the first time, and the other performs data sampling at the second time.
- One of the S1 signal and the S2 signal remains at a high level and the other remains at a low level, and one of the switches SW 55 and SW 58 and the switches SW 56 and SW 57 remains closed and the other is opened. The state remains.
- the reading unit 50 responds to the amount of light incident on the photodiode of the pixel unit P m, n based on the difference in data output from each of the hold circuits H 1, n , H 2, n of the holding unit 30. Data Dout is output.
- the noise component data of each pixel unit P m, n in the m-th row is sampled by the hold circuit H 1, n at the first time, and the second time
- the data corresponding to the accumulated charge amount of each pixel part P m, n in the m-th row is sampled by the hold circuits H 2, n and then the data held by the hold circuits H 1, n , H 2, n respectively.
- the data sampling and data output in the period Tm + 1 are performed.
- both the rolling shutter method and the global shutter method are possible.
- the charge accumulation period of each row of the light receiving unit 10 is shifted by a certain time.
- the charge accumulation periods of all the rows of the light receiving unit 10 are made common.
- FIG. 6 shows the operation in the first operation mode (rolling shutter system).
- FIG. 7 shows the operation in the first operation mode (global shutter method).
- FIG. 8 shows the operation in the second operation mode (rolling shutter system).
- a Trans signal, a Reset signal, a Hold signal and an Address signal used for controlling the operation of the pixel unit P m, n , a Set1 signal, an Hshifta1 signal used for controlling the operation of the hold circuit H1 , n , and From the Hshiftb1 signal, the Set2 signal used for controlling the operation of the hold circuit H2 , n , the Hshifta2 signal and the Hshiftb2 signal, the Freset signal used for controlling the operation of the reading unit 50, the S1 signal and the S2 signal, and the reading unit 50
- the output data Dout is shown in order.
- FIG. 6 is a timing chart showing the operation (rolling shutter system) in the first operation mode of the solid-state imaging device 1 of the present embodiment.
- Period T 1 includes a period from time t 11 to time t 31. Among them, the period from time t 11 to time t 16, the period of each pixel portion P 1 of the first row, n data is sampled by the holding circuit H 1, n, from the time t 21 to time t 31, The data held by each hold circuit H1 , n is read out as data Dout through the reading unit 50. The data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 1,1 to P 1, N in the first row.
- Period T 2 are, including the interval from time t 21 to time t 41. Among them, the period from time t 21 to time t 26, the period of the data of each pixel portion P 2, n of the second row are sampled by a hold circuit H 2, n, from time t 31 to time t 41, The data held by each hold circuit H2 , n is read as data Dout through the reading unit 50. The data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 2,1 to P 2, N in the second row.
- each period T m is a common, except the hold circuit H 1, n, H 2, n is used alternately. In the following the operation of the period T 1.
- the Address (1) signal time t 11 is turned to the high level
- the time t 12 to the Trans (1) signal and Set1 signal turns to the high level
- Set1 signal at time t 13 turns to a low level.
- the Reset (1) signal remains at a low level
- the Hold (1) signal remains at a high level.
- the time t 14 to the Reset (1) signal is high level
- the time t 15 to the Trans (1) turn signal is in low level at time t 16 Reset (1) Signal and Address (1) signal turn to low level.
- the photodiode PD of each of the N pixel portions P 1,1 to P 1, N in the first row The junction capacitance portion is discharged, and the diffusion region (charge storage portion) connected to the gate terminal of the transistor T3 is discharged.
- the Trans (1) signal and the Reset (1) signal become a low level, and the charge generated in the photodiode PD in response to the light incidence is accumulated in the junction capacitance portion of the photodiode PD until the next reading. Go.
- S1 signal is the high level
- S2 signal is a low level.
- Hshifta1 (n) and Hshiftb1 (n) are sequentially set to the high level in the N hold circuits H 1,1 to H 1, N and are held by the respective hold circuits H 1, n .
- Data is sequentially output to the read signal line Hline1 and input to the read unit 50.
- the Freset signal input and output terminal of the amplifier A 5 is initialized at a high level, the period Freset signal is low level, the read signal line from each holding circuit H 1, n Hline1 output data is inputted to the inverting input terminal of the amplifier a 5, the output data corresponding to the input data is output from the non-inverting output terminal of the amplifier a 5 to. Then, the AD converter 51, the data output from the non-inverting output terminal of the amplifier A 5 is AD converted is output as data Dout.
- FIG. 7 is a timing chart showing the operation (global shutter method) in the first operation mode of the solid-state imaging device 1 of the present embodiment.
- Period T 1 includes a period from time t 11 to time t 31. Among them, the period from time t 11 to time t 16, the period of each pixel portion P 1 of the first row, n data is sampled by the holding circuit H 1, n, from the time t 21 to time t 31, The data held by each hold circuit H1 , n is read out as data Dout through the reading unit 50. The data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 1,1 to P 1, N in the first row.
- Period T 2 are, including the interval from time t 21 to time t 41. Among them, the period from time t 21 to time t 26, the period of the data of each pixel portion P 2, n in the second row are sampled by a hold circuit H 2, n, from time t 31 to time t 41, The data held by each hold circuit H2 , n is read as data Dout through the reading unit 50. The data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 2,1 to P 2, N in the second row.
- each period T m is a common, except the hold circuit H 1, n, H 2, n is used alternately.
- the period T 0 before the period T 1 time t 01 ⁇ time t 11
- M ⁇ N pixel units P 1, 1 ⁇ P M in all the N
- the photodiode PD The charges accumulated in the junction capacitor are transferred and accumulated in the diffusion region (charge accumulation unit) connected to the gate terminal of the transistor T3.
- the diffusion region charge accumulation unit
- Hold (1) to Hold (M) signals go high
- Reset (1) to Reset (M) signals go low
- the signal Hold (1) ⁇ Hold (M ) at time t 04 is shifted to low level at time t 11 Reset (1) ⁇ Reset (M ) Signals go high.
- Reset (1) to Reset (M) signals are at low level, Trans (1) to Trans (M) signals and Hold (1) to Hold (M ) Is at a high level, the charge accumulated in the junction capacitance portion of the photodiode PD in all of the M ⁇ N pixel portions P 1,1 to P M, N becomes the gate of the transistor T3. It is transferred to and accumulated in a diffusion region (charge storage unit) connected to the terminal.
- a diffusion region charge storage unit
- each signal of each signal and Reset (1) ⁇ Reset (M ) of ⁇ Trans (M) because at a high level, M ⁇ N number of In all of the pixel portions P 1,1 to P M, N , the junction capacitance portion of the photodiode PD is discharged, and the diffusion region (charge storage portion) connected to the gate terminal of the transistor T3 is discharged.
- each signal of Trans (1) to Trans (M) becomes a low level, and in all of the M ⁇ N pixel portions P 1,1 to P M, N , the photodiode PD responds to the incident light. The generated charges are accumulated in the junction capacitance portion of the photodiode PD until the next reading.
- the Address (1) signal time t 11 is turned to a high level, Set1 signal at time t 12 is shifted to high level, Set1 signal at time t 13 is shifted to low level, Address at time t 16 (1) signal is low Turn to the level. While the Address (1) signal is at a high level, in each of the N pixel units P 1,1 to P 1, N in the first row, the diffusion region (charge storage unit) connected to the gate terminal of the transistor T3 data corresponding to the amount of charges accumulated is output via the transistor T4 to the read signal line L n, is input to the hold circuit H 1, n. At time t 13 the Set1 signal turns to low level, the hold circuit H 1, n, the switch SW 31, SW 34 is shifted to the open state, the data which has been outputted to the read signal line L n is sampled held Is done.
- S1 signal is the high level
- S2 signal is a low level.
- Hshifta1 (n) and Hshiftb1 (n) are sequentially set to the high level in the N hold circuits H 1,1 to H 1, N and are held by the respective hold circuits H 1, n .
- Data is sequentially output to the read signal line Hline1 and input to the read unit 50.
- the Freset signal input and output terminal of the amplifier A 5 is initialized at a high level, the period Freset signal is low level, the read signal line from each holding circuit H 1, n Hline1 output data is inputted to the inverting input terminal of the amplifier a 5, the output data corresponding to the input data is output from the non-inverting output terminal of the amplifier a 5 to. Then, the AD converter 51, the data output from the non-inverting output terminal of the amplifier A 5 is AD converted is output as data Dout.
- FIG. 8 is a timing chart showing the operation (rolling shutter system) in the second operation mode of the solid-state imaging device 1 of the present embodiment.
- the data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 1,1 to P 1, N in the first row.
- the data corresponding to the difference of the data held by is read as data Dout through the reading unit 50.
- the data Dout output at this time represents the amount of light incident on the photodiode PD of the N pixel portions P 2,1 to P 2, N in the second row.
- Trans (1) signal is turned to low level
- Address (1) signal turns to the high level.
- the Reset (1) signal time t 102 is turned to the high level
- Set1 signal at time t 103 is turned to the high level
- the time t 104 to Reset (1) signal is shifted to low level
- Set1 signal at time t 105 is low Turn to the level.
- the Hold (1) signal remains at the high level.
- the time t 105 to Set1 signal turns to low level, the N pixel portions P 1, 1 ⁇ P 1, N respectively of the first row, the diffusion region connected to the gate terminal of the transistor T3 (charge accumulating portion) has become the initial state, the data output to the read signal line L n via the transistor T4 is only the noise component.
- the hold circuit H 1, n, the switch SW 31, SW 34 is turned to an open state, the data of only noise components are output to the read signal line L n is held is sampled.
- Trans (1) signal at time t 106 is turned to the high level, it turned to time t 107 to Set2 signal is high level, Trans (1) at time t 108 signal is shifted to low level at time t 109 Set2 signal Turns to low level.
- the Hold (1) signal remains at the high level.
- the charges accumulated in the junction capacitance portion of the photodiode PD are converted into transistors while the Trans (1) signal is at a high level. It is transferred to and accumulated in a diffusion region (charge storage unit) connected to the gate terminal of T3. Data corresponding to the accumulated charge amount is output via the transistor T4 to the read signal line L n.
- Trans (1) signal and Reset (1) signal becomes a high level, N pixels of the first line P 1, 1 ⁇ P 1, N in each The junction capacitance portion of the photodiode PD is discharged, and the diffusion region (charge storage portion) connected to the gate terminal of the transistor T3 is discharged. Thereafter, the Trans (1) signal and the Reset (1) signal become low level, and each of the N pixel portions P 1,1 to P 1, N in the first row is changed by the photodiode PD in response to light incidence. The generated charges are accumulated in the junction capacitance portion of the photodiode PD until the next reading.
- S1 signal is the high level
- S2 signal is a low level.
- Hshifta1 in the N holding circuits H 1,1 ⁇ H 1, N ( n) and Hshiftb1 (n) is set to the high level, which is held by each holding circuit H 1, n
- Data is sequentially output to the read signal line Hline 1 and input to the read unit 50.
- Hshifta2 (n) and Hshiftb2 (n) are sequentially set to the high level in the N hold circuits H 2,1 to H 2, N , and are held by the respective hold circuits H 2, n.
- the data (signal component + noise component) is sequentially output to the read signal line Hline2 and input to the read unit 50.
- the Freset signal input and output terminal of the amplifier A 5 is initialized at a high level, the period Freset signal is low level, the read signal line from each holding circuit H 1, n Hline1 inversion is input to the input terminal, the corresponding data output from the hold circuit H 2, n to the read signal line Hline2 (signal component + noise component) amplifier output data (noise component) amplifier a 5 to It is input to the non-inverting input terminal of a 5, their output data corresponding to the two input data difference is outputted from the inverted output terminal and the non-inverting output terminal of the amplifier a 5 as a differential signal. Then, the AD conversion unit 51, data outputted from the amplifier A 5 is AD converted is output as data Dout.
- the hold circuits H 1, n , H 2, n of the holding unit 30 operate in parallel and alternately perform data. In addition to sampling, data is output alternately.
- the reading unit 50 responds to the amount of light incident on the photodiode PD of the pixel unit P m, n based on data alternately output from the hold circuits H 1, n , H 2, n of the holding unit 30. Data Dout is output. Therefore, high-speed imaging is possible in the first operation mode.
- the pixel unit P m, n of the light receiving unit 10 outputs noise component data at the first time and accumulates at the second time in the second operation mode. Data corresponding to the amount of charge is output.
- One of the hold circuits H1 , n , H2 , n of the holding unit 30 performs data sampling at the first time, and the other performs data sampling at the second time.
- the reading unit 50 responds to the amount of light incident on the photodiode PD of the pixel unit P m, n based on the difference in data output from each of the hold circuits H 1, n , H 2, n of the holding unit 30. Output data Dout. Therefore, highly accurate imaging is possible in the second operation mode.
- the solid-state imaging device 1 of the present embodiment can realize the operations of the first operation mode (high-speed imaging) and the second operation mode (high-precision imaging) with a common configuration, the circuit scale is increased. Can be suppressed.
- a reading unit 50A may be provided instead of the reading unit 50 as shown in a modification in FIG. Reading section 50 shown in FIG. 2, the non-inverting output terminal and an inverted output switching for switching the connection between the first input terminal 51 1 and the second input terminal 51 and second output terminal and the AD conversion unit 51 of the amplifier A 5
- the switches SW 55 to SW 58 are included.
- the reading unit 50A shown in FIG. 9, switching the connection between the inverting input terminal and non-inverting input terminal of the hold circuit H 1, n, H 2, n and the amplifier A 5 of the holder 30 Switches SW 55 to SW 58 are included as input switching units.
- the reading unit 50A shown in FIG. 9 since the input switching unit to the input side of the amplifier A 5 is provided, is increasing parasitic capacitance and parasitic resistance, is disadvantageous in terms of high-speed operation. From the viewpoint of high-speed operation, as the reading unit 50 shown in FIG. 2, preferably the output switching unit to the output side of the amplifier A 5 is provided.
- the ⁇ sign may be processed for the digital data Dout output from the AD conversion unit 51 in the first operation mode.
- the effect of speeding up the imaging is significant when the number of pixels in the row direction is small, and is significant when the number of columns of readout pixels is small. That is, since the operation of sampling output data from each pixel unit of the light receiving unit 10 by the holding unit 30 is performed for each row, the time required for this operation does not depend on the number of pixels in the column direction. On the other hand, the operation of outputting the output data from the holding unit 30 from the reading unit 50 is substantially proportional to the number of pixels in the column direction.
- the data in the first operation mode some of the columns of N rows of the photodetecting section 10, a hold circuit H 1, n of the holding portion 30, H 2, n is the operation in parallel, alternately
- the sampling unit performs data output alternately
- the reading unit 50 performs the pixel unit P m, based on the data alternately output from the hold circuits H 1, n , H 2, n of the holding unit 30 .
- the data of the pixel unit may be read for some of the M rows of the light receiving unit 10. Further, in the second operation mode, data of the pixel unit may be read out for some of the M rows of the light receiving unit 10 or for some of the N columns of the light receiving unit 10. Good.
- Solid-state imaging device 10 Light-receiving part 20 Row selection part 30 Holding part 40 Column selection part 50 Reading part 60 Control part P1,1 -PM , N pixel part H1,1 -H2 , N hold circuit
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Abstract
Description
M行N列に配列されたM×N個の画素部P1,1~PM,Nを含み、各画素部Pm,nが、入射光量に応じた量の電荷を発生するフォトダイオードと、該電荷を蓄積する電荷蓄積部とを有し、電荷蓄積部における蓄積電荷量に応じたデータを出力する受光部と、(2) 2N個のホールド回路H1,1~H2,Nを含み、各ホールド回路H1,n,H2,nが、受光部の第n列のM個の画素部P1,n~PM,nのうちの何れかから出力されるデータをサンプリングして保持し出力する保持部と、(3) 保持部のホールド回路H1,n,H2,nの双方または一方から出力されるデータを入力して、その入力したデータに基づいて画素部Pm,nのフォトダイオードへの入射光量に応じたデータを出力する読出部と、(4) 保持部および読出部それぞれの動作を制御する制御手段と、を備えることを特徴とする。ただし、Mは1以上の整数であり、Nは2以上の整数であり、mは1以上M以下の整数であり、nは1以上N以下の整数である。
10 受光部
20 行選択部
30 保持部
40 列選択部
50 読出部
60 制御部
P1,1~PM,N 画素部
H1,1~H2,N ホールド回路
Claims (6)
- M行N列に配列されたM×N個の画素部P1,1~PM,Nを含み、各画素部Pm,nが、入射光量に応じた量の電荷を発生するフォトダイオードと、該電荷を蓄積する電荷蓄積部とを有し、前記電荷蓄積部における蓄積電荷量に応じたデータを出力する受光部と、
2N個のホールド回路H1,1~H2,Nを含み、各ホールド回路H1,n,H2,nが、前記受光部の第n列のM個の画素部P1,n~PM,nのうちの何れかから出力されるデータをサンプリングして保持し出力する保持部と、
前記保持部のホールド回路H1,n,H2,nの双方または一方から出力されるデータを入力して、その入力したデータに基づいて画素部Pm,nのフォトダイオードへの入射光量に応じたデータを出力する読出部と、
前記保持部および前記読出部それぞれの動作を制御する制御手段と、
を備え、
前記制御手段は、
第1動作モードにおいて、
前記保持部のホールド回路H1,n,H2,nに対して、パラレルに動作をさせて交互にデータサンプリングを行わせるとともに交互にデータ出力を行わせ、
前記読出部に対して、前記保持部のホールド回路H1,n,H2,nから交互に出力されるデータに基づいて画素部Pm,nのフォトダイオードへの入射光量に応じたデータを出力させ、
第2動作モードにおいて、
前記受光部の画素部Pm,nに対して、第1時刻にノイズ成分のデータを出力させるとともに、第2時刻に前記蓄積電荷量に応じたデータを出力させ、
前記保持部のホールド回路H1,n,H2,nのうち一方に対して前記第1時刻にデータサンプリングを行わせるとともに、他方に対して前記第2時刻にデータサンプリングを行わせ、
前記読出部に対して、前記保持部のホールド回路H1,n,H2,nそれぞれから出力されるデータの差分に基づいて画素部Pm,nのフォトダイオードへの入射光量に応じたデータを出力させる、
ことを特徴とする固体撮像装置(ただし、Mは1以上の整数、Nは2以上の整数、mは1以上M以下の整数、nは1以上N以下の整数)。 - 前記制御手段は、
前記第1動作モードにおいて、前記受光部のN列のうちの一部の列について、
前記保持部のホールド回路H1,n,H2,nに対して、パラレルに動作をさせて交互にデータサンプリングを行わせるとともに交互にデータ出力を行わせ、
前記読出部に対して、前記保持部のホールド回路H1,n,H2,nから交互に出力されるデータに基づいて画素部Pm,nのフォトダイオードへの入射光量に応じたデータを出力させる、
ことを特徴とする請求項1に記載の固体撮像装置。 - 前記読出部は、
反転入力端子,非反転入力端子,反転出力端子および非反転出力端子を有し、前記保持部のホールド回路H1,n,H2,nのうちの一方から出力されるデータを前記反転入力端子に入力し、他方から出力されるデータを前記非反転入力端子に入力するアンプと、
前記アンプの前記反転入力端子と前記非反転出力端子との間に設けられた第1容量素子と、
前記アンプの前記非反転入力端子と前記反転出力端子との間に設けられた第2容量素子と、
前記アンプの前記反転入力端子および前記非反転出力端子それぞれの電位を初期化する第1初期化手段と、
前記アンプの前記非反転入力端子および前記反転出力端子それぞれの電位を初期化する第2初期化手段と、
を含むことを特徴とする請求項1または2に記載の固体撮像装置。 - 前記読出部は、
第1入力端子および第2入力端子を有し、前記アンプの前記非反転出力端子および前記反転出力端子のうちの一方から出力されるデータを前記第1入力端子に入力し、他方から出力されるデータを前記第2入力端子に入力して、前記第1入力端子および前記第2入力端子それぞれに入力されたデータの差分に応じたデジタル値を出力するAD変換部を更に含む、
ことを特徴とする請求項3に記載の固体撮像装置。 - 前記読出部は、
前記アンプの前記非反転出力端子および前記反転出力端子と前記AD変換部の前記第1入力端子および前記第2入力端子との間の接続を切り替える出力切替部を更に含む、
ことを特徴とする請求項4に記載の固体撮像装置。 - 前記読出部は、
前記保持部のホールド回路H1,n,H2,nと前記アンプの前記反転入力端子および前記非反転入力端子との間の接続を切り替える入力切替部を更に含む、
ことを特徴とする請求項3に記載の固体撮像装置。
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