WO2014007355A1 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- WO2014007355A1 WO2014007355A1 PCT/JP2013/068448 JP2013068448W WO2014007355A1 WO 2014007355 A1 WO2014007355 A1 WO 2014007355A1 JP 2013068448 W JP2013068448 W JP 2013068448W WO 2014007355 A1 WO2014007355 A1 WO 2014007355A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- common
- pixel
- comb
- pixel comb
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
Definitions
- the present invention relates to a liquid crystal display device, and more particularly to a lateral electric field type active matrix liquid crystal display device having excellent afterimage characteristics.
- the IPS (In-Plane Switching) method which has been widely used for large monitors, displays liquid crystal molecules by rotating the molecular axes in a plane parallel to the substrate by a horizontal electric field. Since the viewing angle dependency on the rising angle of TN is eliminated, the viewing angle characteristic is significantly more advantageous than the TN method.
- the IPS method since the pixel electrode and the common electrode are arranged in a comb-like shape and a horizontal electric field is applied, the ratio of the area of the electrode to the display region is increased, and the aperture ratio has been disadvantageous compared to the TN method. In recent years, however, it has been improved to the same level as the TN system.
- FIG. 7A shows a plan view of one pixel
- FIG. 7B shows a cross-sectional view of the display region.
- a scanning signal wiring 701 made of a first metal layer and two common signal wirings 702 in parallel are formed.
- a gate insulating film 703 is formed on the scanning signal wiring 701 and the common signal wiring 702, and a video signal wiring 704 made of a second metal layer, a thin film semiconductor layer 705, and a source electrode 706 are formed on the first insulating film. Is done.
- a passivation film 707 made of an inorganic film is formed on the video signal wiring 704, the thin film semiconductor layer 705, and the source electrode 706, and a planarization film 708 made of an organic film is further formed on the passivation film.
- a pixel comb electrode 709 and a common comb electrode 710 made of a transparent conductive film are formed on the planarizing film 708. When the planarizing film 708 is not used, the pixel comb electrode 709 and the common comb electrode 710 are formed on the passivation film 707.
- the video signal wiring 704 is completely covered in the wiring width direction by the common shield electrode 710B through the passivation film 707 and the planarization film 708.
- the pixel comb electrode 709 and the common comb electrode 710 are electrically connected to the source electrode 706 and the common signal wiring 702 through contact holes 711 and 712, respectively.
- a region where the common signal wiring 702 and the source electrode 706 overlap is a storage capacitor.
- the pixel comb electrode 709 and the common comb electrode 710 are both formed of a transparent conductive film, the region on the electrode also contributes to the transmittance. Since the video signal wiring 704 is completely covered with the common shield electrode 710 ⁇ / b> B in the wiring width direction, the opening can be expanded to the vicinity of the video signal wiring 704.
- Patent Document 1 discloses a structure in which pixel comb electrodes having different line widths are provided.
- the width of the pixel comb electrodes having a wide line width is the same as that of the common shield electrode. It is not specified to be approximately the same as the width.
- the position of the pixel comb electrode for increasing the line width is not defined.
- the invention disclosed in Patent Document 1 aims to increase the aperture ratio by forming a pixel comb-teeth electrode with a thick line width as a laminate of a transparent conductive layer and a metal layer, and forming a storage capacitor at this location.
- the present invention aims at symmetrization of the structure of the pixel electrode and the common electrode, and the object is different from that of Patent Document 1.
- Patent Document 2 discloses a structure in which the width of the central pixel comb electrode is large.
- the width of the thick pixel comb electrode is substantially the same as the width of the common shield electrode. It is not the same.
- Patent Document 2 is not intended to reduce asymmetry as in the present invention.
- the video signal wiring is completely covered with the common shield electrode in the wiring width direction, so that the total width of the common comb electrode plus the common shield electrode is wider than the total width of the pixel comb electrode and more common than the pixel potential.
- the potential becomes dominant, and the electric field is strong near the pixel comb electrode, and the electric field is weak near the common comb electrode. For this reason, there is a difference between the way of light in the vicinity of the pixel comb electrode in the negative frame and the way of light in the vicinity of the common comb electrode in the positive frame, and the way of light between the frames is further asymmetric.
- JP 2003-140188 A (page 5, FIG. 1) Japanese Patent No. 4047586 (page 7, FIGS. 1 and 3) Japanese Patent No. 4603560 (page 8, FIG. 1)
- the object of the present invention is to solve the above-mentioned problem, and by making the IPS pixel comb electrode and the common comb electrode structurally symmetrical, the way of shining between frames is also symmetric, Provided is a liquid crystal display device in which a signal applied between a pixel comb electrode and a common comb electrode is also symmetric after a flicker adjustment is performed by changing a common potential so that the luminance between frames is equal. It is in.
- the liquid crystal display device of the first invention of the present application is a state in which the liquid crystal display device is sandwiched between a first substrate, a second substrate facing each other, and the first substrate and the second substrate.
- a first liquid crystal display device comprising: a thin film transistor having a gate electrode, a drain electrode, and a source electrode; and a transparent conductive film corresponding to a pixel to be displayed.
- the thin film transistor is formed in the vicinity of the intersection of the scanning signal wiring and the video signal wiring, and the gate electrode is connected to the scanning signal wiring and the drain current wiring.
- the source electrode is electrically connected to the pixel comb electrode
- the common comb electrode and the common shield electrode are electrically connected to the common signal wiring
- the video signal wiring is insulated.
- a horizontal electric field type active matrix liquid crystal display device that performs display by rotating a molecular axis of a liquid crystal layer in a plane parallel to the first substrate, at least one of the plurality of pixel comb-teeth electrodes is used.
- the width of the pixel comb electrode is wider than the width of the other pixel comb electrode and the common comb electrode, and the width of the other pixel comb electrode and the common comb electrode excluding the wide pixel comb electrode Mutually Are the same, the width of the HabaFutoshi pixel comb-tooth electrodes provides a liquid crystal display device is substantially the same as the width of the common shield electrode.
- the common signal wiring is integrally formed in a lower layer of the wide pixel comb electrode in parallel with a longitudinal direction thereof.
- the source electrode is extended and formed parallel to the longitudinal direction.
- the wide pixel comb electrode is formed at the center of the unit pixel or at a position closest to the center.
- the number of the common comb electrode and the number of the pixel comb electrodes is the same on both sides of the wide pixel comb electrode.
- the common comb-tooth electrode and the number of the pixel comb-tooth electrodes are the same on one side of the wide pixel comb-tooth electrode.
- the flickering between frames is also symmetric, and after adjusting the flicker by adjusting the common potential so that the luminance between frames is equal.
- the signal applied between the pixel comb electrode and the common comb electrode is also symmetric. For this reason, the afterimage is improved.
- FIG. 1 is a schematic view of a cross section of a display region and a potential distribution of a liquid crystal display device according to a first embodiment of the present invention. It is sectional drawing of the liquid crystal display device which concerns on 1st Example of this invention. It is a top view of the liquid crystal display device which concerns on 2nd Example of this invention. 4 is a schematic view of a cross section of a display region and a potential distribution of a liquid crystal display device according to a second embodiment of the present invention. It is a top view of the liquid crystal display device which concerns on 3rd Example of this invention.
- FIG. 1 shows an example in which the number of columns is an odd multiple of 2, and there are an odd number of pixel comb electrodes.
- the difference from the conventional example 1 described in FIG. 7 is that one of the plurality of pixel comb electrodes 109B is wider than the other pixel comb electrodes 109 and the common comb electrodes 110, and the video signal This is the same as the width of the common shield electrode 110 ⁇ / b> B that covers the wiring 104 through the passivation film 107.
- the display area is divided into two sub areas by the thick pixel comb electrode 109B. In each sub-region, the number of the pixel comb electrodes 109 and the common comb electrodes 110 is the same. Further, since the common shield electrode 110B and the thick pixel comb electrode 109B have the same width, the electric field concentration in the vicinity of the pixel comb electrode as in the conventional example is reduced.
- FIG. 1A is a plan view of a liquid crystal display device according to a first embodiment of the present invention
- FIG. 1B is a schematic view of a cross section of a display region and a potential distribution
- FIG. 1C is a cross-sectional view in which the first substrate and the second substrate are opposed to each other and the liquid crystal layer is sandwiched.
- the lateral electric field type active matrix liquid crystal display device includes a first glass substrate 118 as a first substrate, a second glass substrate 119 as a second substrate facing each other, The liquid crystal layer 122 is held while being sandwiched between the first glass substrate 118 and the second glass substrate 119.
- Embodiment 1 configured as described above is an example in which the number of columns is an odd multiple of two, and there are an odd number of pixel comb electrodes.
- the scanning signal wiring 101 and the common signal wiring 102 made of the first metal layer are laminated on the first glass substrate 118 with an alloy mainly composed of molybdenum and an alloy mainly composed of aluminum. Let it form.
- a thin film semiconductor layer 105 is formed.
- the video signal wiring 104 and the source electrode 106 of the thin film transistor are formed using a metal layer in which an alloy containing molybdenum as a main component and an alloy containing aluminum as a main component are stacked.
- n-type semiconductor layer is formed over the thin-film semiconductor layer 105, and the n-type semiconductor layer other than the source / drain electrodes is removed by dry etching after forming an electrode made of the second metal layer.
- a passivation film 107 made of silicon nitride is formed thereon.
- a photosensitive acrylic resin is applied thereon as the flattening film 108, and a predetermined pattern is formed by performing exposure, development, and baking.
- the pixel comb electrode 109 and the common comb electrode 110 are formed using a transparent conductive film such as ITO.
- the common shield electrode 110 ⁇ / b> B is formed so as to cover the video signal wiring 104, and shields the electric field from the video signal wiring 104. As a result, the display area can be widened, and the aperture ratio can be increased.
- the pixel comb electrode 109 is electrically connected to the source electrode 106 through a contact hole 111 between the source electrode and the pixel comb electrode.
- the common comb electrode 110 is electrically connected to the common signal wiring 102 via the contact hole 112 between the common signal wiring and the common comb electrode.
- the contact hole 112 is not necessarily required for all pixels, and may be thinned out or not provided at all.
- the center one 109B has the same width as the common shield electrode 110B.
- the number of the common comb electrode 110 and the number of the pixel comb electrodes 109 are the same.
- a light shielding layer 117, color layers 116r, 116g, and 116b, and an overcoat layer 115 are sequentially formed on a second glass substrate 119.
- a color layer is unnecessary.
- Alignment layers 813 and 814 are applied and fired on the first substrate and the second substrate, respectively, and after rubbing in a predetermined direction, the first substrate and the second substrate are overlapped, and a spacer material is used with a predetermined gap.
- the liquid crystal layer 122 is held.
- Polarizing plates 120 and 121 are attached to the outer sides of the first substrate and the second substrate, respectively.
- the molecular axis of the liquid crystal layer 122 is changed to the first by an electric field which is applied between the pixel comb electrode 109 and the common comb electrode 110 and is substantially parallel to the surface of the first glass substrate 118. Display is performed by rotating in a plane parallel to the glass substrate 118.
- the display area is divided into two sub-areas by the thick pixel comb electrode 109B.
- the number of the pixel comb electrodes 109 and the common comb electrodes 110 is the same.
- the width of the common shield electrode 110B and the width of the thick pixel comb electrode 109B are the same at both ends of each sub-region, and the electric field concentrates in the vicinity of the pixel comb electrode as in the conventional example. Absent. Since the structure is symmetrical as described above, the potential distribution is symmetric as shown in FIG. 1B, and the light asymmetry between frames is eliminated.
- the flickering between frames is also symmetric, and after adjusting the flicker by adjusting the common potential so that the luminance between frames is equal.
- the signal applied between the pixel comb electrode and the common comb electrode is also symmetric. For this reason, the afterimage is improved.
- the width of the thick pixel comb electrode 109B is ideally the same as that of the common shield electrode 110B, but it may be difficult depending on the pixel pitch. Depending on the design, it is desirable to make the width of the thick pixel comb electrode 109B as close as possible to the width of the common shield electrode 110B.
- FIG. 2A is a plan view of a liquid crystal display device according to a second embodiment of the present invention
- FIG. 2B is a schematic view of the cross section of the display region and the potential distribution. The sectional view is the same as that of the first embodiment.
- a common signal wiring is formed under and in parallel with the pixel comb electrode 209B.
- the common signal wiring is integrally formed with two common signal wirings 202 parallel to the scanning signal wiring 201.
- the display area is divided into two sub areas by the thickest pixel comb electrode 209B at the center.
- the number of the pixel comb electrodes 209 and the common comb electrodes 210 is the same.
- the width of the common shield electrode 210B and the width of the thick pixel comb electrode 209B are the same at both ends of each sub-region, so that the electric field is not concentrated near the pixel electrode unlike the conventional example. Since the structure is symmetrical as described above, the potential distribution is symmetric as shown in FIG. 2B, and the thicker pixel comb electrode 209B is shielded from light. Better than Example 1.
- the flickering between frames is also symmetric, and after adjusting the flicker by adjusting the common potential so that the luminance between frames is equal.
- the signal applied between the pixel comb electrode and the common comb electrode is also symmetric. For this reason, the afterimage is improved.
- the storage capacity can be secured in the region where the thick pixel comb electrode 209B and the common signal wiring 202 overlap.
- the lateral aperture ratio is disadvantageous, but by securing a storage capacitor in a region where the thick pixel comb electrode 209B and the common signal wiring 202 overlap each other.
- the aperture ratio in the vertical direction can be increased. Total aperture ratio can be maintained as compared with the conventional IPS system.
- the width of the thick pixel comb electrode 209B is ideally the same as that of the common shield electrode 210B, but the width of the thick pixel comb electrode 209B is as common as possible depending on the design. It is desirable to approach the width of the shield electrode 210B.
- FIG. 3A is a plan view of a liquid crystal display device according to a third embodiment of the present invention
- FIG. 3B is a schematic view of the cross section of the display region and the potential distribution. The sectional view is the same as that of the first embodiment.
- the difference from the second embodiment is that the common signal wiring is formed under and in parallel with the thick pixel comb electrode 309B, and the second metal layer is further under and in parallel with the thick pixel comb electrode 309B.
- the source electrode 306 made of is stretched.
- the display area is divided into two sub areas by the thick pixel comb electrode 309B.
- the number of pixel comb electrodes 309 and common comb electrodes 310 is the same.
- the width of the common shield electrode 110B and the width of the thick pixel comb electrode 109B are the same at both ends of each sub-region, and the electric field concentrates in the vicinity of the pixel electrode as in the conventional example. Absent. Since the structure is symmetrical as described above, the potential distribution is symmetric as shown in FIG. 3B, and the thicker pixel comb electrode 309B is shielded from light. Better than Example 1.
- the IPS pixel electrode and the common electrode are symmetrical in structure, the light emission between frames is also symmetric, and the pixel comb after flicker adjustment is performed by changing the common potential so that the luminance between frames is equal.
- the signal applied between the tooth electrode and the common comb electrode is also symmetric. For this reason, the afterimage is improved.
- the storage capacity can be secured in the region where the thick pixel comb electrode 309B and the common signal wiring 302 overlap.
- the lateral aperture ratio is disadvantageous, but in the region where the common signal wiring 302 and the source electrode 306 overlap under the thick pixel comb electrode 309B.
- the aperture ratio in the vertical direction can be increased. Since more storage capacity can be secured than in the second embodiment, the effect of widening the aperture ratio in the vertical direction is greater than that in the second embodiment.
- the width of the thick pixel comb electrode 309B is ideally the same as that of the common shield electrode 310B. However, depending on the design, the width of the thick pixel comb electrode 309B is increased. It is desirable to make it as close to the width of the common shield electrode 310B as possible.
- FIG. 4 is a plan view of a liquid crystal display device according to a fourth embodiment of the present invention.
- the potential distribution and the sectional view are the same as those in the first embodiment.
- the pixel comb electrode 409, the thick pixel comb electrode 409B, the common comb electrode 410, the common shield electrode 410B, and the video signal wiring 404 are bent and are multi-domained. Is a point.
- the common signal wiring may be formed under and in parallel with the thick pixel comb electrode 409B as in the second embodiment, or the second signal may be formed under and in parallel with the thick pixel comb electrode 409B as in the third embodiment.
- a source electrode 306 made of a metal layer may be stretched.
- the width of the thick pixel comb electrode 409B is ideally the same as that of the common shield electrode 410B. However, depending on the design, the width of the thick pixel comb electrode 409B is increased. It is desirable to make it as close to the width of the common shield electrode 410B as possible.
- FIG. 5A is a plan view of a liquid crystal display device according to a fifth embodiment of the present invention
- FIG. 5B is a schematic view of the cross section of the display region and the potential distribution.
- the sectional view is the same as that of the first embodiment.
- the fifth embodiment is an example when the number of columns is a multiple of four, and there are an even number of pixel comb electrodes.
- the width of one of the even number of pixel comb electrodes 509 closest to the center 509B is set to be equal to the width of the common shield electrode 510B.
- the thick pixel comb electrode 509B is not located at the center of the pixel and does not divide the pixel symmetrically, but the common comb electrode on both sides of the thick pixel comb electrode 509B. 510 and the number of pixel comb electrodes 509 are the same, and the width of the common shield electrode 510B and the width of the thick pixel comb electrodes 509B are the same at both ends of each region, so that symmetry is maintained.
- the effect of improving the afterimage by making the way of illuminating between the frames symmetrical is the same as in Examples 1 to 4, and is not affected by whether the number of columns is an odd multiple of 2 or a multiple of 4.
- the width of the thick pixel comb electrode 509B is ideally the same as that of the common shield electrode 510B. However, depending on the design, the width of the thick pixel comb electrode 509B is increased. It is desirable to make it as close to the width of the common shield electrode 510B as possible.
- FIG. 6A is a plan view of a liquid crystal display device according to a sixth embodiment of the present invention
- FIG. 6B is a schematic diagram of a cross section of the display region and a potential distribution.
- the sectional view is the same as that of the first embodiment.
- Example 6 is an example in which the number of columns is 4, which is the minimum multiple of 4, and there are two pixel comb electrodes.
- the common comb electrode is located at the center of the pixel as in the fifth embodiment, and the width of one of the two pixel comb electrodes 609 is equal to the width of the common shield electrode 610B. I have to.
- the number of the common comb electrode 510 and the pixel comb electrode 509 is the same as one, whereas the number on the left side is zero. The symmetry is maintained.
- the effect of improving the afterimage by making the illuminating method between frames symmetrical is the same as in Examples 1 to 5, and is not affected by whether the number of columns is an odd multiple of 2 or a multiple of 4.
- the width of the thick pixel comb electrode 609B is ideally the same as the width of the common shield electrode 610B, but the width of the thick pixel comb electrode 509B is set according to the design. It is desirable to make it as close to the width of the common shield electrode 610B as possible.
- the present invention can be applied to a horizontal electric field type active matrix liquid crystal display device and any device that uses the liquid crystal display device as a display device.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
Description
IPS方式の例を示す。図7(a)に1画素の平面図を、図7(b)に表示領域の断面図を示す。第1の基板上に、第1の金属層からなる走査信号配線701と、並行する2本の共通信号配線702が形成されている。前記走査信号配線701と共通信号配線702上にゲート絶縁膜703が形成され、前記第1の絶縁膜上に第2の金属層からなる映像信号配線704、薄膜半導体層705、ソース電極706が形成される。前記映像信号配線704、薄膜半導体層705、ソース電極706上には無機膜からなるパッシベーション膜707が形成され、さらに前記パッシベーション膜上に有機膜からなる平坦化膜708が形成される。前記平坦化膜708上に、透明性の導電膜からなる画素櫛歯電極709、共通櫛歯電極710が形成される。なお、前記平坦化膜708を用いない場合は、前記パッシベーション膜707上に前記画素櫛歯電極709、共通櫛歯電極710が形成される。
先行技術文献
特許文献
102、202、302、402、502、602、702 共通信号配線
103、203、303、503、603、703 ゲート絶縁膜
104、204、304、404、504、604、704 映像信号配線
105、205、305、405、505、605、705 薄膜半導体層
106、206、306、406、506、606、706 ソース電極
107、207、307、507、607、707 パッシベーション膜
108、208、308、508、608、708 平坦化膜
109、209、309、409、509、609、709 画素櫛歯電極
109B、209B、309B、409B、509B、609B 太い画素櫛歯電極
110、210、310、410、510、610、710 共通櫛歯電極
110B、210B、310B、410B、510B、610B、710B 共通シールド電極
111、211、311、411、511、611、711 ソース電極-画素櫛歯電極間コンタクトホール
112、212、312、412、512、612、712 共通信号配線-共通櫛歯電極間コンタクトホール
113 第1の基板の配向層
114 第2の基板の配向層
115 オーバーコート層
116r、116g、116b 色層
117 遮光層
118 第1のガラス基板
119 第2のガラス基板
120 第1の基板側の偏光板
121 第2の基板側の偏光板
122 液晶層
Claims (6)
- 第一の基板と、対向する第二の基板と、前記第一基板と前記第二基板との間に挟まれた状態で保持されている液晶層とからなる液晶表示装置であって、
前記第一基板は、ゲート電極、ドレイン電極、ソース電極を有する薄膜トランジスタと、表示すべき画素に対応して透明性の導電膜からなる画素櫛歯電極と、基準電位が与えられる共通櫛歯電極および共通シールド電極と、走査信号配線と、前記走査信号配線と平行するように配置される共通信号配線と、前記共通信号配線と直交するように配置される映像信号配線を備え、
前記薄膜トランジスタは前記走査信号配線と前記映像信号配線の交点付近に形成されており、
前記ゲート電極は前記走査信号配線に、前記ドレイン電極は前記映像信号配線に、前記ソース電極は前記画素櫛歯電極に、前記共通櫛歯電極及び前記共通シールド電極は前記共通信号配線に、それぞれ電気的に接続されており、
前記映像信号配線は絶縁膜を介して配線幅方向に前記共通シールド電極で覆われており、
前記画素櫛歯電極と前記共通櫛歯電極の間に印加される、前記第一基板の表面に略平行な電界により、前記液晶層の分子軸を前記第一基板に平行な面内において回転させることにより表示を行う横電界方式のアクティブマトリクス型液晶表示装置において、
複数本の前記画素櫛歯電極のうち少なくとも1本の前記画素櫛歯電極の幅は、他の前記画素櫛歯電極及び前記共通櫛歯電極の幅より太く、その幅太画素櫛歯電極を除く他の前記画素櫛歯電極及び前記共通櫛歯電極の幅は互いに略同じであり、
前記幅太画素櫛歯電極の幅は、前記共通シールド電極の幅と略同じである液晶表示装置。 - 前記幅太画素櫛歯電極の下層であって、その長手方向に平行に前記共通信号配線が一体的に形成されていることを特徴とする請求項1に記載の液晶表示装置。
- 前記幅太画素櫛歯電極の下層であって、その長手方向に平行に前記ソース電極が延伸形成されていることを特徴とする請求項2に記載の液晶表示装置。
- 前記幅太画素櫛歯電極は、単位画素の中央または最も中央に近い位置に形成されることを特徴とする請求項1乃至3に記載の液晶表示装置。
- 前記幅太画素櫛歯電極の両側で、前記共通櫛歯電極と前記画素櫛歯電極の本数が同じであることを特徴とする、請求項1乃至4に記載の液晶表示装置。
- 前記幅太画素櫛歯電極の片側で、前記共通櫛歯電極と前記画素櫛歯電極の本数が同じであることを特徴とする、請求項1乃至4に記載の液晶表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014523797A JP6187941B2 (ja) | 2012-07-04 | 2013-07-04 | 液晶表示装置 |
CN201380035422.6A CN104471472B (zh) | 2012-07-04 | 2013-07-04 | 液晶显示装置 |
US14/412,492 US9383613B2 (en) | 2012-07-04 | 2013-07-04 | Liquid-crystal display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012150957 | 2012-07-04 | ||
JP2012-150957 | 2012-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014007355A1 true WO2014007355A1 (ja) | 2014-01-09 |
Family
ID=49882106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/068448 WO2014007355A1 (ja) | 2012-07-04 | 2013-07-04 | 液晶表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9383613B2 (ja) |
JP (1) | JP6187941B2 (ja) |
CN (1) | CN104471472B (ja) |
WO (1) | WO2014007355A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160048013A (ko) | 2014-10-23 | 2016-05-03 | 도쿄엘렉트론가부시키가이샤 | 화소 전극의 패턴 형성 방법 및 형성 시스템 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101997745B1 (ko) * | 2013-01-25 | 2019-07-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN204314581U (zh) * | 2015-01-08 | 2015-05-06 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板和显示装置 |
CN105789264A (zh) * | 2016-05-06 | 2016-07-20 | 京东方科技集团股份有限公司 | 一种曲面显示面板及其制备方法、显示装置 |
CN109581769A (zh) * | 2018-12-11 | 2019-04-05 | 合肥鑫晟光电科技有限公司 | 像素结构、阵列基板及显示面板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001337339A (ja) * | 1999-10-21 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
JP4047586B2 (ja) * | 2002-01-10 | 2008-02-13 | Nec液晶テクノロジー株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100433596B1 (ko) | 1999-10-21 | 2004-05-31 | 마쯔시다덴기산교 가부시키가이샤 | 액정표시장치 |
JP2002323706A (ja) | 2001-02-23 | 2002-11-08 | Nec Corp | 横電界方式のアクティブマトリクス型液晶表示装置及びその製造方法 |
JP4603560B2 (ja) | 2001-02-23 | 2010-12-22 | Nec液晶テクノロジー株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置及び電子機器 |
JP2003140188A (ja) | 2001-11-07 | 2003-05-14 | Hitachi Ltd | 液晶表示装置 |
CN1207617C (zh) * | 2001-11-15 | 2005-06-22 | Nec液晶技术株式会社 | 平面开关模式有源矩阵型液晶显示器件及其制造方法 |
JP4248848B2 (ja) * | 2002-11-12 | 2009-04-02 | 奇美電子股▲ふん▼有限公司 | 液晶表示セルおよび液晶ディスプレイ |
KR100849599B1 (ko) * | 2007-02-05 | 2008-07-31 | 비오이 하이디스 테크놀로지 주식회사 | 에프에프에스 모드 액정표시장치 |
JP5266574B2 (ja) * | 2008-03-19 | 2013-08-21 | Nltテクノロジー株式会社 | 液晶表示装置 |
-
2013
- 2013-07-04 JP JP2014523797A patent/JP6187941B2/ja active Active
- 2013-07-04 WO PCT/JP2013/068448 patent/WO2014007355A1/ja active Application Filing
- 2013-07-04 CN CN201380035422.6A patent/CN104471472B/zh active Active
- 2013-07-04 US US14/412,492 patent/US9383613B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001337339A (ja) * | 1999-10-21 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
JP4047586B2 (ja) * | 2002-01-10 | 2008-02-13 | Nec液晶テクノロジー株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160048013A (ko) | 2014-10-23 | 2016-05-03 | 도쿄엘렉트론가부시키가이샤 | 화소 전극의 패턴 형성 방법 및 형성 시스템 |
Also Published As
Publication number | Publication date |
---|---|
CN104471472B (zh) | 2017-03-15 |
US9383613B2 (en) | 2016-07-05 |
JPWO2014007355A1 (ja) | 2016-06-02 |
US20150185564A1 (en) | 2015-07-02 |
JP6187941B2 (ja) | 2017-08-30 |
CN104471472A (zh) | 2015-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5156506B2 (ja) | 液晶表示装置 | |
US9557620B2 (en) | TFT array substrate and display device with tilt angle between strip-like pixel electrodes and direction of initial alignment of liquid crystals | |
US20140267962A1 (en) | Liquid crystal display | |
US9097951B2 (en) | Thin film transistor array substrate and method for manufacturing the same, and liquid crystal display device | |
JP5127485B2 (ja) | 液晶表示装置 | |
JP2009103797A (ja) | 液晶表示装置 | |
JP6187941B2 (ja) | 液晶表示装置 | |
US8570465B2 (en) | Liquid crystal display | |
US10620487B2 (en) | Pixel structure, array substrate, display device and method for manufacturing the same | |
JP2010169814A (ja) | 液晶表示装置 | |
JP2009186869A (ja) | 液晶表示装置 | |
US20200050064A1 (en) | Pixel structure | |
KR20060131014A (ko) | 고투과율을 위한 프린지 필드 스위칭 모드 액정표시장치 | |
TWI553877B (zh) | 薄膜電晶體基板、顯示面板及顯示裝置 | |
WO2013007187A1 (zh) | 阵列基板、液晶面板及显示设备 | |
JP2015118193A (ja) | 液晶表示装置 | |
JP2019128429A (ja) | 液晶表示装置 | |
TW200305759A (en) | IPS-LCD device with a color filter formed on an array substrate | |
JP2016014779A (ja) | 液晶表示装置 | |
TWI509332B (zh) | 顯示面板 | |
CN108490705B (zh) | 阵列基板、液晶显示面板与显示装置 | |
KR102422555B1 (ko) | 표시장치 | |
JP2015135411A (ja) | 液晶表示装置 | |
KR102606508B1 (ko) | 액정표시장치 | |
JP2009069332A (ja) | 液晶表示パネル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13813127 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014523797 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14412492 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13813127 Country of ref document: EP Kind code of ref document: A1 |