WO2013175954A1 - プローブ装置及びプローブ装置用ウエハ載置台 - Google Patents
プローブ装置及びプローブ装置用ウエハ載置台 Download PDFInfo
- Publication number
- WO2013175954A1 WO2013175954A1 PCT/JP2013/062794 JP2013062794W WO2013175954A1 WO 2013175954 A1 WO2013175954 A1 WO 2013175954A1 JP 2013062794 W JP2013062794 W JP 2013062794W WO 2013175954 A1 WO2013175954 A1 WO 2013175954A1
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- WIPO (PCT)
- Prior art keywords
- vacuum chuck
- vacuum
- probe
- grooves
- mounting table
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0425—Test clips, e.g. for IC's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0491—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets for testing integrated circuits on wafers, e.g. wafer-level test cartridge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Definitions
- a probe device for performing an electrical inspection of a semiconductor device formed on a semiconductor wafer is used.
- Such a probe apparatus uses a probe card in which a large number of probes that are brought into contact with electrode pads on a semiconductor wafer are arranged.
- the probe card is mounted on the card clamp mechanism of the probe apparatus, while the semiconductor wafer is sucked and held on the wafer mounting table, and the wafer mounting table is moved by the driving mechanism, so that the probe of the probe card and the semiconductor wafer are moved to each other. Electrical continuity is obtained by contacting the formed electrode of the semiconductor device to be measured. Then, an inspection signal is supplied from the tester to the semiconductor device to be measured through the probe, and an electrical inspection of the semiconductor device to be measured is performed by measuring a signal from the semiconductor device to be measured (see, for example, Patent Document 1). ).
- a thick annular portion is formed on the outer peripheral edge portion on the back surface side.
- a so-called “Taiko” wafer is used in which the other portion is a thin portion whose plate thickness is thinner than the annular portion (see, for example, Patent Document 2).
- the semiconductor wafer having the thick annular portion and the thin thin portion is easy to bend because the rigidity of the thin portion is extremely lower than that of a normal semiconductor wafer. It has the characteristic that the rigidity is significantly different. For this reason, when such a semiconductor wafer is placed on the wafer mounting table of the probe device and sucked and held, it is difficult to suck the whole evenly, unlike the case of sucking and holding a normal semiconductor wafer. There's a problem.
- a card clamping mechanism that detachably holds a probe card having a plurality of probes
- a wafer mounting table that holds a semiconductor wafer by suction and has a drive mechanism.
- a wafer mounting table for contacting electrodes formed on the semiconductor wafer with the plurality of probes of the probe card held by the card clamp mechanism by driving the drive mechanism.
- the wafer is formed such that an annular portion protruding to the back surface side of the outer peripheral edge portion is formed and a portion other than the annular portion is a thin portion having a thinner plate thickness than the annular portion.
- the mounting table includes a flat surface portion on which the thin portion is mounted, and a step portion formed on an outer peripheral edge portion of the flat surface portion and on which the annular portion is disposed, and the flat surface portion
- a plurality of concentrically circular vacuum chuck grooves are formed, and at least a part of the plurality of vacuum chuck grooves is evacuated from a plurality of portions separated by at least 90 ° along the circumferential direction.
- a probe apparatus characterized in that the vacuum path is connected.
- a wafer mounting table which holds a semiconductor wafer by suction and has a drive mechanism, and is driven by the probe on a probe card by driving the drive mechanism.
- a wafer mounting table for a probe device for contacting the formed electrode wherein an annular portion protruding to the back surface side of the outer peripheral edge portion is formed, and a portion other than the annular portion is a thin portion having a plate thickness thinner than the annular portion.
- a plurality of concentrically circular vacuum chuck grooves are formed, and at least a part of the plurality of vacuum chuck grooves is evacuated from a plurality of portions separated by at least 90 ° along the circumferential direction. Wafer table for prober and a plurality of vacuum channels are connected to perform is provided.
- the probe apparatus 1 includes a housing 2, and a wafer mounting table 10 for mounting and holding the semiconductor wafer W by suction is disposed in the housing 2.
- the wafer mounting table 10 includes a drive mechanism 11 and can be moved in the x, y, z, and ⁇ directions by the drive of the drive mechanism 11.
- the housing 2 positioned above the wafer mounting table 10 is provided with a circular opening, and an insert ring 12 is disposed along the peripheral edge of the circular opening.
- the insert ring 12 is provided with a card clamp mechanism 13, and the probe card 20 is detachably held by the card clamp mechanism 13.
- the probe card 20 includes a wiring board and a plurality of probes (not shown) electrically connected to the wiring board, and the probes of the probe card 20 are semiconductors formed on the semiconductor wafer W. It is arranged corresponding to the electrode of the device.
- a needle grinder 14 for polishing the tip of the probe and a camera 15 that is arranged facing upward and can capture an upper image are disposed.
- the camera 15 is composed of a CCD camera, for example, and images the probe of the probe card 20 and aligns it with the probe.
- test head 30 connected to a tester for sending a signal for inspection and detecting the signal from the semiconductor device to inspect the state of the semiconductor device is disposed above the probe card 20.
- the semiconductor wafer W to be electrically inspected by the probe device 1 is formed with an annular portion 120 that protrudes toward the back surface side of the outer peripheral edge portion, and portions other than the annular portion 120 are annular.
- This is a so-called TAIKO wafer in which the thin portion 121 is thinner than the portion 120.
- the thin portion 121 has a thickness of, for example, about 100 ⁇ m or less (for example, 40 ⁇ m), and is much thinner than a normal semiconductor wafer (for example, a thickness of 700 ⁇ m). For this reason, the thin part 121 has low rigidity and is easily deformed. Further, since the annular portion 120 is thick, its rigidity is high. By providing the annular portion 120, the entire semiconductor wafer W is suppressed from being deformed and can be easily handled. Such a semiconductor wafer W is manufactured, for example, by grinding the inside of the annular portion 120 while leaving the portion of the annular portion 120.
- the mounting surface includes a flat portion 111 on which the thin portion 121 is placed, and a flat portion 111.
- a step portion 110 is formed on the outer peripheral edge portion, and a step portion 110 is formed so as to be lowered downward so that the annular portion 120 can be disposed.
- the vacuum chuck grooves 112i to 112n located on the inner periphery are connected to a vacuum pipe 113 that forms a vacuum path.
- the vacuum chuck grooves 112a to 112h located on the outer peripheral portion are connected to two vacuum pipes 114a and a vacuum pipe 114b that form a vacuum path.
- the two vacuum pipes 114a and the vacuum pipe 114b are disposed at positions separated from each other by 90 ° or more along the circumferential direction (positions separated by about 130 ° in the present embodiment).
- the semiconductor wafer W which is a so-called Tyco wafer, including the thick annular portion 120 and the thin thin portion 121 can be uniformly adsorbed and held.
- the strength of the suction force with respect to the semiconductor wafer W can be confirmed by visual observation because the thickness of the thin portion 121 is thin and the vacuum chuck groove 112 can be seen from the surface side of the semiconductor wafer W. This is because the vacuum chuck groove 112 can be clearly seen in the portion, while the vacuum chuck groove 112 cannot be clearly seen in the portion having a weak suction force.
- the suction force at the site 180 ° away from the vacuum pipe 114a is weak because the site is the farthest away from the vacuum pipe 114a and when the thin part 121 is sucked at the end. It is presumed that the deflection is concentrated on this part. Moreover, in the wafer mounting base 10a having the structure shown in FIG. This is presumed to be because the outer peripheral portion has relatively higher rigidity than the inner peripheral portion.
- the storage unit 42 stores a recipe that stores a control program (software), inspection condition data, and the like for realizing various operations executed by the probe device 1 under the control of the control unit 40. Then, if necessary, various recipes in the probe apparatus 1 are controlled under the control of the control unit 40 by calling an arbitrary recipe from the storage unit 42 according to an instruction from the operation unit 41 and causing the control unit 40 to execute the recipe. Is done.
- recipes such as control programs and processing condition data may be stored in a computer-readable computer recording medium (eg, hard disk, CD, flexible disk, semiconductor memory, etc.), or For example, it can be transmitted from other devices as needed via a dedicated line and used online.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
2 筺体
10 ウエハ載置台
11 駆動機構
12 インサートリング
13 カードクランプ機構
14 針研盤
15 カメラ
20 プローブカード
30 テストヘッド
40 制御部
41 操作部
42 記憶部
Claims (6)
- 複数のプローブを有するプローブカードを、着脱自在に保持するカードクランプ機構と、
半導体ウエハを吸着保持し且つ駆動機構を有するウエハ載置台であって、前記駆動機構を駆動することによって前記カードクランプ機構に保持された前記プローブカードの前記複数のプローブに、前記半導体ウエハに形成された電極を接触させるウエハ載置台と、
を具備したプローブ装置であって、
外周縁部裏面側に突出する環状部が形成され且つ前記環状部以外の部分が前記環状部より板厚の薄い薄厚部とされた前記半導体ウエハを載置可能とするように、前記ウエハ載置台は、前記薄厚部を載置する平面部と、前記平面部の外周縁部に形成され且つ前記環状部を配置する段差部とを有し、
前記平面部には同心状に円形の複数の真空チャック用溝が形成され、前記複数真空チャック用溝の少なくとも一部には、周方向に沿って互いに少なくとも90°以上離間した複数の部位から真空引きを行う複数の真空路が接続されている
ことを特徴とするプローブ装置。 - 前記複数の真空チャック用溝のうち、内周側の真空チャック用溝には前記複数の真空路のうちの1つの真空路が接続され、外周側の前記真空チャック用溝には前記複数の真空路のうちの他の複数の真空路が接続されていることを特徴とする請求項1記載のプローブ装置。
- 前記複数の真空チャック用溝のうち、最外周部に形成された2本の真空チャック用溝は、互いの溝間の距離が他の真空チャック用溝の間の溝間より短くなるように配設されていることを特徴とする請求項1又は2記載のプローブ装置。
- 半導体ウエハを吸着保持し且つ駆動機構を有するウエハ載置台であって、前記駆動機構を駆動することによってプローブカードのプローブに、前記半導体ウエハに形成された電極を接触させるプローブ装置用ウエハ載置台であって、
外周縁部裏面側に突出する環状部が形成され且つ前記環状部以外の部分が前記環状部より板厚の薄い薄厚部とされた前記半導体ウエハを載置可能とするように、前記薄厚部を載置する平面部と、前記平面部の外周縁部に形成され且つ前記環状部を配置する段差部とを有し、
前記平面部には同心状に円形の複数の真空チャック用溝が形成され、前記複数の真空チャック用溝の少なくとも一部には、周方向に沿って互いに少なくとも90°以上離間した複数の部位から真空引きを行う複数の真空路が接続されている
ことを特徴とするプローブ装置用ウエハ載置台。 - 前記複数の真空チャック用溝のうち、内周側の真空チャック用溝には前記複数の真空路のうちの1つの真空路が接続され、外周側の前記真空チャック用溝には前記複数の真空路のうちの他の複数の真空路が接続されていることを特徴とする請求項4記載のプローブ装置用ウエハ載置台。
- 前記複数の真空チャック用溝のうち、最外周部に形成された2本の真空チャック用溝は、互いの溝間の距離が他の真空チャック用溝の間の溝間より短くなるように配設されていることを特徴とする請求項4又は5記載のプローブ装置用ウエハ載置台。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/402,940 US9523711B2 (en) | 2012-05-23 | 2013-04-25 | Probe apparatus and wafer mounting table for probe apparatus |
EP13794404.7A EP2840598A4 (en) | 2012-05-23 | 2013-04-25 | PROBE DEVICE AND WATER POSITIONING TABLE FOR THE PROBE DEVICE |
KR1020147032592A KR101725267B1 (ko) | 2012-05-23 | 2013-04-25 | 프로브 장치 및 프로브 장치용 웨이퍼 재치대 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012117207A JP6001326B2 (ja) | 2012-05-23 | 2012-05-23 | プローブ装置及びプローブ装置用ウエハ載置台 |
JP2012-117207 | 2012-05-23 |
Publications (1)
Publication Number | Publication Date |
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WO2013175954A1 true WO2013175954A1 (ja) | 2013-11-28 |
Family
ID=49623651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2013/062794 WO2013175954A1 (ja) | 2012-05-23 | 2013-04-25 | プローブ装置及びプローブ装置用ウエハ載置台 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9523711B2 (ja) |
EP (1) | EP2840598A4 (ja) |
JP (1) | JP6001326B2 (ja) |
KR (1) | KR101725267B1 (ja) |
TW (1) | TWI592672B (ja) |
WO (1) | WO2013175954A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015100608A1 (de) * | 2015-01-16 | 2016-07-21 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zur Bearbeitung eines Substrats |
CN113066733A (zh) * | 2021-03-03 | 2021-07-02 | 上海伟测半导体科技股份有限公司 | 一种超薄晶圆的检测方法和类普通晶圆 |
Families Citing this family (9)
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---|---|---|---|---|
DE102015101759B3 (de) * | 2015-02-06 | 2016-07-07 | Asm Assembly Systems Gmbh & Co. Kg | Bestückmaschine und Verfahren zum Bestücken eines Trägers mit ungehäusten Chips |
TWI684016B (zh) | 2015-05-14 | 2020-02-01 | 德商羅德與舒瓦茲公司 | 具有功率校準之量測系統及量測方法 |
DE102015112518B3 (de) * | 2015-07-30 | 2016-12-01 | Asm Assembly Systems Gmbh & Co. Kg | Bestückmaschine und Verfahren zum Bestücken eines Trägers mit ungehäusten Chips |
DE102016123362B3 (de) * | 2016-12-02 | 2018-03-08 | Asm Assembly Systems Gmbh & Co. Kg | Bestückmaschine mit einer Verschiebevorrichtung zum Verschieben einer Aufnahmevorrichtung für einen Träger mit Bestückmedium und ein Verfahren zum Bestücken |
JP7426073B2 (ja) * | 2017-01-08 | 2024-02-01 | テストメトリックス, インコーポレイテッド | 半導体デバイスを試験するための機器および方法 |
JP6908826B2 (ja) * | 2017-03-23 | 2021-07-28 | 株式会社東京精密 | プローバおよびウェーハチャック |
CN109001499A (zh) * | 2018-07-24 | 2018-12-14 | 苏州创瑞机电科技有限公司 | 一种带有吸附功能半自动直针测试插座 |
CN113053774A (zh) * | 2019-12-27 | 2021-06-29 | 迪科特测试科技(苏州)有限公司 | 探测装置 |
CN111312649A (zh) * | 2020-02-25 | 2020-06-19 | 中芯集成电路制造(绍兴)有限公司 | 真空载台、半导体机台以及贴膜装置 |
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JPH01319964A (ja) * | 1988-06-21 | 1989-12-26 | Nikon Corp | 基板の吸着装置 |
JPH0745692A (ja) * | 1993-07-26 | 1995-02-14 | Nikon Corp | 基板の吸着保持装置 |
JP2010080775A (ja) | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | プローブ装置 |
JP2010098056A (ja) | 2008-10-15 | 2010-04-30 | Tokyo Electron Ltd | 載置台 |
JP2012117207A (ja) | 2010-11-29 | 2012-06-21 | Inaba Seisakusho Co Ltd | シャッター取付装置 |
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SG55211A1 (en) * | 1995-07-05 | 1998-12-21 | Tokyo Electron Ltd | Testing apparatus |
US6121783A (en) * | 1997-04-22 | 2000-09-19 | Horner; Gregory S. | Method and apparatus for establishing electrical contact between a wafer and a chuck |
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JP2001144197A (ja) | 1999-11-11 | 2001-05-25 | Fujitsu Ltd | 半導体装置、半導体装置の製造方法及び試験方法 |
DE102006042026B4 (de) * | 2006-09-07 | 2016-08-04 | Infineon Technologies Ag | Vorrichtung zum Halten eines Substrats und Verfahren zur Behandlung eines Substrats |
JP2008164292A (ja) * | 2006-12-26 | 2008-07-17 | Tokyo Electron Ltd | プローブ検査装置、位置ずれ補正方法、情報処理装置、情報処理方法及びプログラム |
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-
2012
- 2012-05-23 JP JP2012117207A patent/JP6001326B2/ja active Active
-
2013
- 2013-04-25 WO PCT/JP2013/062794 patent/WO2013175954A1/ja active Application Filing
- 2013-04-25 US US14/402,940 patent/US9523711B2/en active Active
- 2013-04-25 EP EP13794404.7A patent/EP2840598A4/en not_active Withdrawn
- 2013-04-25 KR KR1020147032592A patent/KR101725267B1/ko active IP Right Grant
- 2013-05-16 TW TW102117367A patent/TWI592672B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01319964A (ja) * | 1988-06-21 | 1989-12-26 | Nikon Corp | 基板の吸着装置 |
JPH0745692A (ja) * | 1993-07-26 | 1995-02-14 | Nikon Corp | 基板の吸着保持装置 |
JP2010080775A (ja) | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | プローブ装置 |
JP2010098056A (ja) | 2008-10-15 | 2010-04-30 | Tokyo Electron Ltd | 載置台 |
JP2012117207A (ja) | 2010-11-29 | 2012-06-21 | Inaba Seisakusho Co Ltd | シャッター取付装置 |
Non-Patent Citations (1)
Title |
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See also references of EP2840598A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015100608A1 (de) * | 2015-01-16 | 2016-07-21 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zur Bearbeitung eines Substrats |
CN113066733A (zh) * | 2021-03-03 | 2021-07-02 | 上海伟测半导体科技股份有限公司 | 一种超薄晶圆的检测方法和类普通晶圆 |
Also Published As
Publication number | Publication date |
---|---|
EP2840598A4 (en) | 2016-02-17 |
EP2840598A1 (en) | 2015-02-25 |
US20150145547A1 (en) | 2015-05-28 |
TW201411152A (zh) | 2014-03-16 |
KR20150022776A (ko) | 2015-03-04 |
JP2013243326A (ja) | 2013-12-05 |
TWI592672B (zh) | 2017-07-21 |
US9523711B2 (en) | 2016-12-20 |
JP6001326B2 (ja) | 2016-10-05 |
KR101725267B1 (ko) | 2017-04-10 |
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