WO2013172010A1 - センサ装置 - Google Patents
センサ装置 Download PDFInfo
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- WO2013172010A1 WO2013172010A1 PCT/JP2013/003031 JP2013003031W WO2013172010A1 WO 2013172010 A1 WO2013172010 A1 WO 2013172010A1 JP 2013003031 W JP2013003031 W JP 2013003031W WO 2013172010 A1 WO2013172010 A1 WO 2013172010A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5769—Manufacturing; Mounting; Housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
Definitions
- the present disclosure relates to a sensor device including a semiconductor substrate and a sensor unit that is formed on one surface side of the semiconductor substrate and converts a physical quantity into an electrical signal.
- Patent Document 1 a substrate, a support portion formed on the substrate, a movable electrode supported by the support portion in a state of floating from the substrate, and a fixed electrode formed on the substrate, A capacitive acceleration sensor has been proposed.
- the above-described support portion, movable electrode, and fixed electrode (hereinafter collectively referred to as a sensor portion) are formed on one surface of the substrate, and this one surface is defined by the X direction and the Y direction. It is parallel to the specified plane.
- the capacitance type acceleration sensor shown in Patent Document 1 passes through the center of itself, the first direction along the X direction, and the second direction along the Y direction through the center of itself. It has a symmetrical structure. Therefore, even if thermal distortion occurs in the substrate due to temperature changes, the distortion is expected to be symmetric with respect to each of the first direction and the second direction, and the thermal stress caused by the distortion is detected by the sensor. The anisotropic application to the part is suppressed. Thereby, it is suppressed that the detection accuracy of acceleration falls by the above-mentioned thermal stress.
- each sensor unit is a line with respect to each of the first direction and the second direction. It is not symmetric.
- a sensor unit that is line symmetric with respect to the first direction and asymmetric with respect to the second direction, or a sensor unit that is asymmetric with respect to the first direction and is line symmetric with respect to the second direction is 1
- the structure is formed on one substrate. Therefore, when thermal distortion occurs in the substrate due to temperature change, the distortion becomes asymmetric with respect to each of the first direction and the second direction. As a result, the thermal stress generated due to the distortion is anisotropically applied to each sensor unit, and the detection accuracy of acceleration of each sensor unit may be reduced. Moreover, there is a possibility that a difference occurs in the detection accuracy of acceleration of each sensor unit.
- the present disclosure has been made in view of the above points, and an object of the present disclosure is to provide a sensor device in which a decrease in physical quantity detection accuracy is suppressed.
- the sensor device includes a semiconductor substrate and a plurality of sensor units.
- the plurality of sensor units are disposed on one side of the semiconductor substrate and convert physical quantities into electrical signals.
- the one surface is parallel to a prescribed plane defined by an X direction and a Y direction orthogonal to each other.
- the semiconductor substrate has a center point that is a geometric and mass center.
- the semiconductor substrate has a shape symmetrical with respect to a first reference line passing through the central point and parallel to the X direction and a second reference line passing through the central point and parallel to the Y direction.
- Each of the plurality of sensor units has a shape symmetrical with respect to the first reference line and the second reference line.
- FIG. 1 is a top view illustrating a schematic configuration of a sensor device according to the first embodiment of the present disclosure.
- FIG. 2 is a sectional view taken along line II-II in FIG.
- FIG. 3 is a sectional view taken along line III-III in FIG.
- FIG. 4 is a top view showing a modified example of the sensor device
- FIG. 5 is a top view showing a modified example of the sensor device
- FIG. 6 is a top view showing a modified example of the sensor device
- FIG. 7 is a top view showing a modified example of the sensor device
- FIG. 8 is a top view showing a modified example of the sensor device
- FIG. 1 is a top view illustrating a schematic configuration of a sensor device according to the first embodiment of the present disclosure.
- FIG. 2 is a sectional view taken along line II-II in FIG.
- FIG. 3 is a sectional view taken along line III-III in FIG.
- FIG. 4 is a top view showing a modified example of the
- FIG. 9 is a sectional view taken along line IX-IX in FIG.
- FIG. 10 is a sectional view showing a displacement state when acceleration is applied
- FIG. 11 is a cross-sectional view showing a displacement state when acceleration is applied
- FIG. 12 is a top view showing a modified example of the sensor device
- FIG. 13 is a cross-sectional view showing thermal strain generated in the semiconductor substrate when the lid is attached to the semiconductor substrate
- FIG. 14 is a cross-sectional view showing thermal strain generated in the semiconductor substrate when the lid is not attached to the semiconductor substrate.
- the sensor unit includes an acceleration sensor.
- the sensor device according to the first embodiment will be described with reference to FIGS. In the following, two directions orthogonal to each other are indicated as an X direction and a Y direction, and a direction orthogonal to these two directions is indicated as a Z direction.
- the sensor device 100 has a semiconductor substrate 10 with a fine structure.
- the semiconductor substrate 10 is a silicon on insulator (SOI) substrate in which an insulating layer 13 is sandwiched between a first semiconductor layer 11 and a second semiconductor layer 12, and this semiconductor substrate Sensor portions 14 and 15 corresponding to the fine structure described above are formed in a portion close to one surface 10 a of 10. That is, the semiconductor substrate 10 includes the second semiconductor layer 12, the insulating layer 13, and the first semiconductor layer 11 in a direction from the one surface 10a toward another surface located on the opposite side. Sensor units 14 and 15 are provided.
- the one surface 10a is parallel to a defined plane defined by the X direction and the Y direction.
- the sensor parts 14 and 15 are formed by etching the second semiconductor layer 12 and the insulating layer 13 into a predetermined shape using a known exposure technique.
- the sensor units 14 and 15 are not connected to the first semiconductor layer 11 via the insulating layer 13 and the floating portion 16 where the second semiconductor layer 12 is floated relative to the first semiconductor layer 11 without the insulating layer 13 interposed therebetween. And a fixing portion 17 to which the second semiconductor layer 12 is fixed. That is, the sensor units 14 and 15 are provided by the second semiconductor layer 12 of the semiconductor substrate 10.
- the floating portion 16 includes a weight portion 18 that forms the center of mass, a movable electrode 19 formed on the weight portion 18, a fixed electrode 20 that faces the movable electrode 19, a support portion 21 that supports the fixed electrode 20, and an electrode 19. , 20 have first beam portions 22 having spring properties in a direction facing each other.
- the fixing portion 17 includes a first anchor 23 that supports the weight portion 18 and a second anchor 24 that supports the fixed electrode 20 by supporting the supporting portion 21.
- a first pad 25 for inputting a constant voltage is formed on the first anchor 23, and a capacitance change of a capacitor formed by the movable electrode 19 and the fixed electrode 20 is applied to the second anchor 24 by an external element (
- a second pad 26 is formed for output to an unillustrated).
- the first sensor unit 14 and the second sensor unit 15 have different shapes. Therefore, first, the first sensor unit 14 will be described, and then the second sensor unit 15 will be described.
- the weight portion 18 of the first sensor portion 14 has a frame portion 18a surrounding the periphery of the first anchor 23 whose longitudinal direction extends in the X direction.
- the anchor 23 and the frame portion 18a are connected to each other via both first ends of the anchor 23 and the first beam portion 22 having a spring property in the X direction. With this configuration, the frame portion 18a can be displaced in the X direction.
- the region surrounded by the frame portion 18 a is divided into two equal parts by the first anchor 23 and the first beam part 22. It passes through the center point that is the mass center and is symmetrically arranged with respect to the first reference line L1 parallel to the X direction.
- a movable electrode 19, a fixed electrode 20, and a support portion 21 that supports the fixed electrode 20 are disposed in each of the bisected regions.
- a movable electrode 19 having a longitudinal direction in the Y direction is formed in a comb shape from the inner surface of the portion along the X direction in the frame portion 18a, and a longitudinal direction in the Y direction is formed from a surface facing the frame portion 18a in the support portion 21.
- the fixed electrode 20 is formed in a comb shape.
- the comb-like electrodes 19 and 20 mesh with each other so as to face each other in the X direction, thereby forming a first capacitor.
- the capacitance of the first capacitor is changed by the displacement of the frame portion 18a (movable electrode 19) in the X direction.
- the region surrounded by the frame portion 18a is divided into two equal parts by the first anchor 23 and the first beam portion 22, but one region (hereinafter referred to as the upper region) located above the plane of the drawing.
- the movable electrode 19 located on the left side of the paper surface relative to the opposed fixed electrode 20 and the movable electrode 19 located on the other region located below the paper surface (hereinafter referred to as a lower region) is opposed fixed.
- the electrode 20 is located on the right side of the drawing. Therefore, when the frame portion 18a moves to the right in the drawing, the movable electrode 19 and the fixed electrode 20 located in the upper region are displaced away from each other, while the movable electrode 19 and the fixed electrode 20 located in the lower region are displaced. Are displaced toward each other.
- the increase and decrease of the electrostatic capacitances of the first capacitor constituted by the upper region electrodes 19 and 20 and the first capacitor constituted by the lower region electrodes 19 and 20 are reversed.
- the acceleration in the X direction is detected based on the difference in capacitance between these two first capacitors.
- the first anchor 23 is positioned at the center of the semiconductor substrate 10, and is aligned in the Y direction via the second anchor 24 and a minute gap (a gap for partitioning the anchors 23, 24). It is out.
- the weight portion 18 of the second sensor portion 15 has a frame portion 18 b that surrounds the periphery of the first sensor portion 14.
- the first anchor 23 is disposed outside the region surrounded by the frame portion 18b, and the portion along the X direction in the frame portion 18b and the first anchor 23 form the first beam portion 22 having springiness in the Y direction. Are connected through. With this configuration, the frame portion 18b can be displaced in the X direction.
- two rectangular regions are formed between a portion of the frame portion 18b along the Y direction and the first sensor unit 14, and these two regions are geometric shapes of the semiconductor substrate 10. They are symmetrically arranged with respect to a second reference line L2 that passes through a central point that is a geometrical and mass center and is parallel to the Y direction.
- a movable electrode 19, a fixed electrode 20, and a support portion 21 that supports the fixed electrode 20 are disposed in each of these two regions.
- a movable electrode 19 whose longitudinal direction extends in the X direction is formed in a comb-tooth shape from the inner surface of the portion along the Y direction in the frame portion 18b, and the longitudinal direction extends in the X direction from the surface facing the frame portion 18b in the support portion 21.
- the fixed electrode 20 is formed in a comb shape.
- the comb-like electrodes 19 and 20 mesh with each other so as to face each other in the Y direction, thereby forming a second capacitor.
- the capacitance of the second capacitor is changed by the displacement of the frame portion 18b (movable electrode 19) in the Y direction.
- two regions are formed between the portion along the Y direction in the frame portion 18b and the first sensor unit 14, but one region (hereinafter referred to as the left region) located on the left side of the paper surface.
- the movable electrode 19 is located below the opposed fixed electrode 20 on the paper surface, and the movable electrode 19 located on the other region located on the right side of the paper (hereinafter referred to as the right region)
- the fixed electrode 20 is positioned above the paper surface. Therefore, when the frame portion 18b moves downward in the drawing, the movable electrode 19 and the fixed electrode 20 located in the left region are displaced away from each other, while the movable electrode 19 and the fixed electrode 20 located in the right region are displaced. Are displaced toward each other.
- the increase and decrease of the electrostatic capacitances of the second capacitor constituted by the electrodes 19 and 20 in the left region and the second capacitor constituted by the electrodes 19 and 20 in the right region are reversed.
- the acceleration in the Y direction is detected based on the difference in capacitance between these two second capacitors.
- the semiconductor substrate 10 passes through a center point that is its own geometric and mass center and is parallel to the X direction, and its own geometric and mass center. Are symmetrical with respect to each of the second reference lines L2 parallel to the Y direction.
- Each of the sensor units 14 and 15 is also symmetrical with respect to the first reference line L1 and the second reference line L2.
- the movable electrode 19 and the fixed electrode 20 shown in the present embodiment are not symmetrical with respect to the reference lines L1 and L2.
- the masses and numbers of the electrodes 19 and 20 are symmetric with respect to the reference lines L1 and L2, respectively, and the total mass is much smaller than that of the weight portion 18. Therefore, the thermal strain generated in the semiconductor substrate 10 to be described later is hardly affected.
- the sensor parts 14 and 15 are arranged in a nested manner in a mode in which the first sensor part 14 is arranged in an area surrounded by the frame part 18b of the second sensor part 15. .
- the first anchor 23 and the second anchor 24 are aligned with the first reference line L1 and the second reference line L2.
- a plurality of sensor units 14 and 15 are formed on one semiconductor substrate 10, and the sensor units 14 and 15 and the semiconductor substrate 10 are respectively connected to the first reference line L1 and the second reference line L2. It has a line-symmetric shape.
- the sensor unit is axisymmetric with respect to the first reference line L1, is asymmetric with respect to the second reference line L2, and is asymmetric with respect to the first reference line L1, and the second reference line L2 Unlike the configuration in which each of the sensor portions that are line-symmetric with respect to each other is formed on one semiconductor substrate, even if thermal distortion occurs in the semiconductor substrate 10 due to a temperature change, the distortion is generated between the first reference line L1 and the second reference line L1. It is expected to be symmetric with respect to each reference line L2. Therefore, the thermal stress generated due to the distortion is suppressed from being anisotropically applied to the sensor units 14 and 15, and the decrease in the detection accuracy of the physical quantity of the sensor units 14 and 15 is suppressed. The Moreover, it is suppressed that a difference arises in the detection accuracy of the physical quantity of each sensor part 14 and 15.
- Sensor units 14 and 15 are arranged in a nested manner. According to this, an increase in the physique of the sensor device 100 is suppressed compared to a configuration in which each sensor unit is simply formed side by side on the semiconductor substrate. Moreover, since the physique of each sensor part 14 and 15 differs, the magnitude
- the anchors 23 and 24 are aligned with the first reference line L1 and the second reference line L2. According to this, the shape of the sensor parts 14 and 15 is simplified compared with the structure in which the plurality of anchors are not located on the first reference line L1 and the second reference line L2, respectively.
- the distortion is expected to be symmetric with respect to the first reference line L1 and the second reference line L2.
- the increase and decrease in the capacitance of each of the two first capacitors arranged symmetrically with respect to the first reference line L1 is reversed, and the electrostatic capacitances of these two first capacitors are reversed. Based on the difference in capacitance, the acceleration in the X direction is detected. Further, the increase and decrease in the capacitance of each of the two second capacitors arranged symmetrically with respect to the second reference line L2 is reversed, and based on the difference in the capacitance between these two second capacitors, X Directional acceleration is detected. According to these, errors caused by thermal stress are canceled.
- the first anchors 23 are aligned with the second anchors 24 in the Y direction via minute gaps. That is, in the sensor part having the smallest shape, the first anchor 23 is aligned with the second anchor 24 via a minute gap.
- the sensor part having the smallest shape is also referred to as an inner sensor part. According to this, compared with the configuration in which the first anchor and the second anchor are separated from each other, the amount of distortion generated in each of the anchors 23 and 24 due to the thermal stress generated due to the thermal distortion of the semiconductor substrate 10 is approximately the same. can do.
- the amount of distortion of each of the electrodes 19 and 20 suspended on the anchors 23 and 24 becomes substantially the same, and the variation in the facing area and the spacing between the electrodes 19 and 20 is suppressed. As a result, a decrease in acceleration detection accuracy is suppressed.
- the example in which the movable electrode 19 and the fixed electrode 20 are not symmetric with respect to the reference lines L1 and L2 is shown.
- FIG. 1 an example is shown in which the second semiconductor layer 12 and the insulating layer 13 are not formed in a region away from the second sensor unit 15.
- a surrounding portion in which the second semiconductor layer 12 is connected to the first semiconductor layer 11 by the insulating layer 13 is formed in a region away from the second sensor portion 15 and surrounds each of the sensor portions 14 and 15.
- the configuration can also be adopted.
- first anchor 23 that supports the frame portion 18b is arranged outside the region surrounded by the frame portion 18b of the second sensor unit 15 is shown.
- first anchor 23 that supports the frame portion 18 b is arranged in the region surrounded by the frame portion 18 b of the second sensor portion 15 may be employed.
- the frame portion 18 b of the second sensor portion 15 having the largest shape among the plurality of sensor portions 14 and 15 has a shape along the edge that borders the one surface 10 a of the semiconductor substrate 10. It is made.
- the second sensor unit 15 having the largest shape is also referred to as an outer sensor unit. According to this, compared with the configuration in which the frame portion of the sensor portion having the largest shape does not follow the edge portion constituting one surface of the semiconductor substrate, the sensor portion having the largest shape in the region where the sensor portions 14 and 15 are not formed. Formation outside the region surrounded by the frame portion is suppressed. Therefore, an increase in the physique of the sensor device 100 is suppressed. Furthermore, in the modification shown in FIG.
- the area of the region surrounded by the frame portion 18b is slightly smaller than the area of the one surface 10a. According to this, it is further effectively suppressed that the area where the sensor parts 14 and 15 are not formed is formed outside the area surrounded by the frame part of the sensor part having the largest shape. The increase is further effectively suppressed.
- FIG. 1 an example in which the support portion 21 that supports the fixed electrode 20 is directly connected to the second anchor 24 is shown.
- the support portion 21 is attached to the second anchor 24 via the second beam portion 27 having spring properties in a direction perpendicular to the direction in which the movable electrode 19 and the fixed electrode 20 face each other.
- An indirectly connected configuration can also be employed. According to this, it is possible to suppress the fixed electrode 20 from being distorted by the thermal stress caused by the thermal strain of the semiconductor substrate 10. Therefore, it is suppressed that the detection accuracy of acceleration falls.
- the second beam portion 27 is formed on the second anchor 24 of the second sensor portion 15 in the modification shown in FIG. 5, an example in which the second beam portion 27 is formed on the second anchor 24 of the second sensor portion 15 is shown.
- a configuration in which the second beam portion 27 is formed on the second anchor 24 of the first sensor portion 14 may be employed.
- the second beam portion 27 is connected to the surface of the second anchor 24 of the first sensor unit 14 that is opposite to the surface facing the first anchor 23.
- the 1st anchor 23 is located in a line with the 2nd anchor 24 in the Y direction via a minute gap.
- each second beam portion 27 is also referred to as a second sub beam portion. According to this, the distortion of the fixed electrode 20 due to the thermal stress caused by the thermal strain of the semiconductor substrate 10 is further effectively suppressed. Therefore, it is suppressed that the detection accuracy of acceleration falls.
- FIGS. 8 and 9 an example in which the first sensor unit 14 that detects the acceleration in the X direction and the second sensor unit 15 that detects the acceleration in the Y direction are formed on the semiconductor substrate 10 is shown.
- a configuration in which a third sensor unit 28 that detects acceleration in the Z direction is formed on the semiconductor substrate 10 in addition to the sensor units 14 and 15 described above may be employed. it can.
- the floating portion 16 of the third sensor portion 28 includes a frame portion 18c that forms the center of mass, and a third beam portion 29 that has a spring property in the Z direction.
- the fixing portion 17 of the third sensor unit 28 includes a third anchor 30 that supports the frame portion 18 c on the first semiconductor layer 11 via the third beam portion 29.
- the frame portion 18c also has a function as the movable electrode 19 shown in the present embodiment, and the frame portion 18c faces the fixed electrode 20 formed in the first semiconductor layer 11 in the Z direction.
- the semiconductor substrate 10 shown in this modification is formed by bonding a plurality of wafers, and each of the layers 11 to 13 is not a single layer.
- the floating portion 16 has a first drive electrode 31 formed on the weight portion 18 and a second drive electrode 32 that faces the first drive electrode 31 in a direction orthogonal to the direction in which the electrodes 19 and 20 face each other. And having. A constant voltage is applied to the weight portion 18, and a voltage whose polarity is periodically reversed is applied to the second drive electrode 32. As a result, the weight portion 18 vibrates in a direction perpendicular to the direction in which the electrodes 19 and 20 face each other.
- each of the first sensor unit 14 and the second sensor unit 15 detects an angular velocity in the Z direction, but the spring constants of the first beam units 22 included in the first sensor unit 14 and the second sensor unit 15 are different. For this reason, the detection ranges of the sensor units 14 and 15 are different.
- an acceleration sensor and an angular velocity sensor are formed on the semiconductor substrate 10 may be employed.
- a configuration is adopted in which a lid 33 is formed between the semiconductor substrate 10 and a storage space for storing the sensor portions 14 and 15 by being attached to one surface 10 a of the semiconductor substrate 10. You can also. According to this, since the semiconductor substrate 10 is supported by the lid portion 33, the lid portion 33 is attached to the semiconductor substrate 10 as shown in FIG. 13 and FIG. As compared with the configuration without the thermal distortion, the semiconductor substrate 10 is suppressed from being thermally strained. Therefore, it is suppressed that the thermal stress generated due to the thermal strain is applied to the sensor units 14 and 15. Note that the length indicated by the arrow in FIGS. 13 and 14 indicates the distortion of the semiconductor substrate 10 in the Z direction.
- the lid portion 33 and the semiconductor substrate 10 are mechanically connected via an oxide film 34, and the oxide film 34 is formed on the second semiconductor layer 12 constituting the fixing portion 17.
- the oxide film 34 is formed on the second semiconductor layer 12 constituting the fixing portion 17.
- a conductive metal film or low-melting glass can be used to fix the lid 33 and the semiconductor substrate 10.
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Abstract
Description
(第1実施形態)
図1~図3に基づいて、第1実施形態に係るセンサ装置を説明する。なお、以下においては、互いに直交の関係にある2方向をX方向、Y方向と示し、これら2つの方向に直交する方向をZ方向と示す。
Claims (10)
- 半導体基板(10)と、
該半導体基板の一面(10a)側に配置された、物理量を電気信号に変換する複数のセンサ部(14,15,28)とを有するセンサ装置であって、
前記一面は、互いに直交するX方向とY方向とによって規定される規定平面に平行であり、
前記半導体基板は、幾何学的及び質量的中心である中心点を有し、
前記半導体基板は、前記中心点を通り、前記X方向に平行する第1基準線(L1)、及び、前記中心点を通り、前記Y方向に平行する第2基準線(L2)それぞれに対して線対称な形状であり、
前記複数のセンサ部それぞれは、前記第1基準線と前記第2基準線それぞれに対して線対称な形状であるセンサ装置。 - 前記複数のセンサ部それぞれは枠部(18a~18c)を有し、
前記複数のセンサ部それぞれの有する枠部の大きさは各々異なっており、
前記複数のセンサ部の1つの枠部によって囲まれた領域内に、前記複数のセンサ部の内他の少なくとも1つが配置される態様で、前記複数のセンサ部それぞれが、入れ子状に配置されている請求項1に記載のセンサ装置。 - 前記複数のセンサ部は、最も形状の大きい外側センサ部を有し、
前記外側センサ部の枠部は、前記半導体基板の前記一面の縁部に沿うように配置される請求項2に記載のセンサ装置。 - 前記半導体基板は、前記一面の反対側に位置する他の面を有し、
前記半導体基板は前記一面から前記他の面に向かう方向に配置された第2半導体層(12)、絶縁層(13)、第1半導体層(11)を有し、
前記絶縁層は、前記第1半導体層と第2半導体層により挟まれ、
前記複数のセンサ部のそれぞれは、浮遊部(16)と固定部(17)を有し、
前記浮遊部は、前記第2半導体層の一部により提供され、前記絶縁層を介さずに、前記第1半導体層に対して浮いており、
前記固定部は、前記第2半導体層の他の一部により提供され、前記絶縁層を介して、前記第1半導体層に対して固定され、
前記浮遊部は、前記枠部、該枠部の所定部位から突出した可動電極(19)、該可動電極と対向する固定電極(20)、前記可動電極と前記固定電極とが対向する方向にバネ性を有する第1梁部(22)、及び、前記可動電極と前記固定電極とが対向する方向とは垂直な方向にバネ性を有する第2梁部(27)を有し、
前記固定部は、前記枠部を支持する第1アンカー(23)、及び、前記固定電極を支持する第2アンカー(24)を有し、
前記第1アンカーと前記枠部とは、前記第1梁部を介して連結され、
前記第2アンカーと前記固定電極とは、前記第2梁部を介して連結されている請求項2又は請求項3に記載のセンサ装置。 - 前記第1アンカー及び前記第2アンカーそれぞれは、前記第1基準線及び前記第2基準線の少なくともいずれか一方に沿って並んでいる請求項4に記載のセンサ装置。
- 前記複数のセンサ部は、最も形状の小さい内側センサ部を有し、
前記内側センサ部の前記第1アンカーと前記第2アンカーは、空隙を介して前記第1基準線及び前記第2基準線のいずれか一方に沿って並んでおり、
前記内側センサ部において、前記第2梁部は、前記第2アンカーにおける前記第1アンカーとの対向面とは反対側の面に連結されている請求項4又は請求項5に記載のセンサ装置。 - 前記第2梁部は複数の第2サブ梁部を有し、
前記第2アンカーと前記固定電極は、前記複数の第2サブ梁部を介して連結されている請求項4又は請求項5に記載のセンサ装置。 - 前記半導体基板の前記一面に配置され、前記半導体基板との間に、前記センサ部を収納する収納空間を規定する蓋部(33)をさらに有する請求項1~7いずれか1項に記載のセンサ装置。
- 前記複数のセンサ部は、少なくとも1つの加速度センサを有する請求項1~8いずれか1項に記載のセンサ装置。
- 前記複数のセンサ部は、少なくとも1つの角速度センサを有する請求項1~9いずれか1項に記載のセンサ装置。
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DE112013002514.0T DE112013002514T5 (de) | 2012-05-15 | 2013-05-13 | Sensorvorrichtung |
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JP2013026974A JP5880877B2 (ja) | 2012-05-15 | 2013-02-14 | センサ装置 |
JP2013-026974 | 2013-02-14 |
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WO2018235719A1 (ja) * | 2017-06-22 | 2018-12-27 | 株式会社デンソー | 振動型角速度センサ |
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TWI627381B (zh) * | 2016-10-21 | 2018-06-21 | 台灣艾華電子工業股份有限公司 | 彎曲感測器 |
US10247753B2 (en) * | 2017-02-14 | 2019-04-02 | Nxp Usa, Inc. | MEMS device with off-axis shock protection |
US10571268B2 (en) * | 2017-11-30 | 2020-02-25 | Invensense, Inc. | MEMS sensor with offset anchor load rejection |
JP6870761B2 (ja) * | 2019-05-15 | 2021-05-12 | 株式会社村田製作所 | ロバストなz軸加速度センサ |
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US9739797B2 (en) | 2017-08-22 |
DE112013002514T5 (de) | 2015-02-19 |
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