WO2013168371A1 - エピタキシャル基板、半導体装置及び半導体装置の製造方法 - Google Patents
エピタキシャル基板、半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 239000004065 semiconductor Substances 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 128
- 239000010703 silicon Substances 0.000 claims abstract description 128
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 134
- 229910052796 boron Inorganic materials 0.000 description 21
- 239000002346 layers by function Substances 0.000 description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 238000005253 cladding Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 230000035882 stress Effects 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 230000000694 effects Effects 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Definitions
- the present invention relates to an epitaxial substrate having an epitaxially grown layer formed on a silicon substrate, a semiconductor device, and a method for manufacturing the semiconductor device.
- an epitaxial substrate in which a semiconductor layer made of a material different from a silicon substrate such as a nitride semiconductor is formed on an inexpensive silicon substrate by epitaxial growth is used.
- a large stress is generated between the silicon substrate and the semiconductor layer during the epitaxial growth of the semiconductor layer or when the temperature is lowered.
- plastic deformation occurs in the silicon substrate, and the warpage becomes very large.
- an epitaxial substrate that cannot be used in a semiconductor device is manufactured.
- the present invention relates to an epitaxial substrate, a semiconductor device, and a semiconductor device manufacturing in which generation of warpage due to stress between the silicon substrate and the semiconductor layer is suppressed by defining the oxygen atom concentration and the boron atom concentration contained in the silicon substrate. It aims to provide a method.
- oxygen atoms are contained at a concentration of 4 ⁇ 10 17 cm ⁇ 3 or more and 6 ⁇ 10 17 cm ⁇ 3 or less, and 5 ⁇ 10 18 cm ⁇ 3 or more and 6 ⁇ 10 19.
- an epitaxial substrate comprising a silicon substrate containing boron atoms at a concentration of cm ⁇ 3 or less and a semiconductor layer made of a material having a thermal expansion coefficient different from that of the silicon substrate, which is disposed on the silicon substrate.
- an epitaxial substrate a semiconductor device, and a method for manufacturing the semiconductor device in which the occurrence of warpage due to stress between the silicon substrate and the semiconductor layer is suppressed.
- FIG. 3 is a schematic cross-sectional view showing the structure of the buffer layer of the epitaxial substrate according to the embodiment of the present invention
- FIG. 3A shows the structure of the buffer layer composed of two nitride semiconductor multilayer films
- FIG. (B) shows the structure of the intermittent buffer layer.
- surface which shows the relationship between the oxygen atom concentration contained in a silicon substrate, and the yield of a silicon substrate.
- FIG. drawing shows the structural example of the semiconductor device using the epitaxial substrate which concerns on embodiment of this invention.
- the semiconductor layer 20 is an epitaxial growth layer formed by an epitaxial growth method.
- Materials having a thermal expansion coefficient different from that of the silicon substrate 10 include nitride semiconductors, III-V compound semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP), silicon carbide (SiC), diamond, zinc oxide (ZnO And II-VI group compound semiconductors such as zinc sulfide (ZnS).
- nitride semiconductors III-V compound semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP), silicon carbide (SiC), diamond, zinc oxide (ZnO And II-VI group compound semiconductors such as zinc sulfide (ZnS).
- GaAs gallium arsenide
- InP silicon carbide
- SiC silicon carbide
- ZnO And II-VI group compound semiconductors such as zinc sulfide (ZnS).
- the nitride semiconductor layer is formed on the silicon substrate 10 by, for example, a metal organic chemical vapor deposition (MOCVD) method.
- MOCVD metal organic chemical vapor deposition
- a typical nitride semiconductor is represented by Al x In y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1), and includes gallium nitride (GaN) and aluminum nitride (AlN). ), Indium nitride (InN), and the like.
- FIG. 2 shows a graph comparing the thermal expansion coefficients of each material.
- FIG. 2 shows the relationship between the temperature and the linear thermal expansion coefficient ⁇ for each semiconductor material.
- the relationship between the thermal expansion coefficients of each material is Si ⁇ GaN ⁇ AlN
- the relationship between the lattice constants is AlN (a axis) ⁇ GaN (a axis) ⁇ Si ((111) plane). Since there is a difference in lattice constant, thermal expansion coefficient, etc.
- the temperature of the silicon substrate 10 is set to a high temperature of, for example, 1000K or more, and the nitride semiconductor is laminated on the silicon substrate 10 so as to lattice match,
- the temperature of the silicon substrate 10 is lowered or the semiconductor layer 20 is heat-treated, stress is generated in the silicon substrate 10 or the semiconductor layer 20, and cracks or warpage of the substrate is likely to occur.
- the semiconductor layer 20 is composed of a laminated body of a buffer layer 21 and a functional layer 22.
- Various structures are employed for the functional layer 22 in accordance with a semiconductor device manufactured using the epitaxial substrate 1. Details of the functional layer 22 will be described later.
- the buffer layer 21 is disposed between the silicon substrate 10 and the functional layer 22, and suppresses generation of cracks, deterioration of crystal quality, and warpage of the substrate due to distortion in the functional layer 22.
- the buffer layer 21 can generally employ a structure in which a plurality of nitride semiconductor layers having different lattice constants and thermal expansion coefficients are stacked.
- a multilayer film in which pairs of AlGaN layers having different composition ratios are stacked is used as the buffer layer 21 .
- a multilayer film in which first nitride semiconductor layers 211 and second nitride semiconductor layers 212 are alternately stacked is used as shown in FIG. 3A.
- the first nitride semiconductor layer 211 is an aluminum nitride (AlN) layer having a thickness of about 5 nm
- the second nitride semiconductor layer 212 is a gallium nitride (GaN) layer having a thickness of about 20 nm.
- the buffer layer 21 having an intermittent buffer structure is a multilayer film in which a plurality of pairs each composed of a first nitride semiconductor layer 211 and a second nitride semiconductor layer 212 having different compositions are stacked.
- a laminated body of the multilayer film 210 and the third nitride semiconductor layer 213 is used as one unit, and an intermittent buffer structure is configured by stacking a plurality of these units.
- a GaN layer is arranged as a third nitride semiconductor layer 213 on a multilayer film 210 in which about 10 pairs of alternately laminated AlN layers and GaN layers are stacked. Construct a laminate for the unit. By periodically repeating this laminated structure, the buffer layer 21 having an intermittent buffer structure is formed.
- the thickness of the AlN film and the GaN film constituting the multilayer film 210 is about 5 nm
- the third nitride semiconductor layer 213 is a GaN layer of about 200 nm.
- the dislocation fixing effect by boron is small when the concentration of boron atoms contained in the silicon substrate 10 is lower than 5 ⁇ 10 18 cm ⁇ 3 .
- the concentration of the boron atom contained is increased, the silicon substrate 10 becomes too hard, causing a problem in the manufacturing process.
- the silicon substrate 10 is manufactured by slicing the silicon ingot or polishing the silicon substrate 10. Has been found to be difficult.
- the dislocation fixing effect by boron atoms in the silicon substrate 10 is effective. And there is no problem in the process steps. That is, the controllability of the warpage of the silicon substrate 10 can be enhanced by the dislocation fixing effect by boron atoms.
- the crystal specification of the silicon substrate 10 containing boron atoms in the above concentration range is such that the concentration of oxygen atoms is 4 ⁇ 10 17 cm ⁇ 3 or more and 6 ⁇ 10 17 cm ⁇ 3 or less. It is determined.
- FIG. 4 shows the relationship between the concentration of oxygen atoms contained in a silicon substrate having a boron atom concentration of 5 to 8 ⁇ 10 18 cm ⁇ 3 and the yield of the silicon substrate.
- the “warp amount” is the difference between the highest point and the lowest point of the main surface of the silicon substrate (wafer)
- “yield” is the ratio at which the warp amount of the silicon substrate is within an allowable range that can be used for a semiconductor device. It was. The yield was determined to be defective when the silicon substrate having a diameter of 6 inches had a warp amount on the negative side (convex downward in FIG. 4) of 100 ⁇ m or more.
- the yield was 100%.
- the yield of silicon substrates having an oxygen atom concentration of 6 ⁇ 10 17 cm ⁇ 3 or more was 50% or less. Therefore, the oxygen atom concentration contained in the silicon substrate 10 is preferably 6 ⁇ 10 17 cm ⁇ 3 or less.
- the oxygen atom concentration contained in the silicon substrate 10 is lower than 4 ⁇ 10 17 cm ⁇ 3 , the productivity is lowered.
- the lower limit of the oxygen atom concentration capable of accurately controlling the oxygen atom concentration of the silicon ingot is about 4 ⁇ 10 17 cm ⁇ 3 .
- the oxygen atom concentration contained in the silicon substrate 10 is preferably 4 ⁇ 10 17 cm ⁇ 3 or more.
- the oxygen atom concentration contained in the silicon substrate 10 within the range of 4 ⁇ 10 17 cm ⁇ 3 or more and 6 ⁇ 10 17 cm ⁇ 3 or less, the generation of oxygen precipitation nuclei in the silicon substrate 10 is performed. Progress is suppressed. Thereby, when the semiconductor layer 20 is formed by epitaxial growth and the temperature of the silicon substrate 10 is lowered, warping of the silicon substrate 10 can be suppressed.
- the film thickness of the semiconductor layer 20 made of a nitride semiconductor is 6 ⁇ m or more, it is desired to suppress plastic deformation of the silicon substrate 10 in particular, and it is preferable to use the present invention.
- the epitaxial substrate 1 As described above, according to the epitaxial substrate 1 according to the embodiment of the present invention, by controlling the oxygen atom concentration and the boron atom concentration contained in the silicon substrate 10 within a predetermined range, Warpage caused by stress between the semiconductor layers 20 can be suppressed. As a result, in the epitaxial substrate 1 having a structure in which the semiconductor layer 20 having a different thermal expansion coefficient from that of the silicon substrate 10 is laminated on the silicon substrate 10, cracks are generated in the semiconductor layer 20 due to plastic deformation of the silicon substrate 10. It is suppressed.
- the manufacturing method of the epitaxial substrate 1 described below is an example, and it is needless to say that it can be realized by various other manufacturing methods including this modification.
- a silicon ingot is manufactured by the MCZ method or the like. At this time, a predetermined amount of boron is put into a quartz crucible containing polycrystalline silicon. The amount of boron is adjusted so that the boron atom concentration contained in the produced silicon ingot is 5 ⁇ 10 18 cm ⁇ 3 or more and 6 ⁇ 10 19 cm ⁇ 3 or less.
- the concentration of oxygen atoms contained in the silicon ingot is adjusted to 4 ⁇ 10 17 cm ⁇ 3 or more and 6 ⁇ 10 17 cm ⁇ 3 or less.
- the silicon substrate 10 having a desired thickness can be obtained by slicing the manufactured silicon ingot.
- the boron atom concentration can be confirmed by measuring the resistivity of the silicon substrate 10.
- the boron atom concentration is converted from the resistivity using an Irvin curve (Irvin Curve) to guarantee the characteristics of the silicon substrate 10.
- the boron atom concentration is confirmed by secondary ion mass spectrometry (SIMS) or chemical analysis.
- the oxygen atom concentration of the silicon substrate 10 is measured by, for example, an infrared absorption method or a molten gas analysis method (GFA method).
- oxygen atoms are contained at a concentration of 4 ⁇ 10 17 cm ⁇ 3 or more and 6 ⁇ 10 17 cm ⁇ 3 or less, and further a concentration of 5 ⁇ 10 18 cm ⁇ 3 or more and 6 ⁇ 10 19 cm ⁇ 3 or less.
- a silicon substrate 10 containing boron atoms is prepared.
- the semiconductor layer 20 made of a material having a thermal expansion coefficient different from that of the silicon substrate 10 is epitaxially grown on the silicon substrate 10 by MOCVD or the like.
- the silicon substrate 10 is stored in the film forming apparatus, and a predetermined source gas is supplied into the film forming apparatus to form the semiconductor layer 20.
- a structure suitable as the buffer layer 21 is a structure in which AlN layers and GaN layers are alternately stacked.
- the buffer layer 21 and the functional layer 22 are sequentially stacked to form the semiconductor layer 20.
- trimethylaluminum (TMA) gas as an Al material and ammonia (NH 3 ) gas as a nitrogen material are supplied to a film forming apparatus.
- trimethylgallium (TMG) gas as a Ga raw material is supplied to the film forming apparatus.
- TMG gas and ammonia gas are supplied to the film forming apparatus.
- the epitaxial substrate 1 is prevented from being warped due to stress between the silicon substrate 10 and the semiconductor layer 20 after the formation. For this reason, it can prevent that the epitaxial substrate 1 which cannot be used for manufacture of a semiconductor device because warp is large is manufactured.
- FIG. 5 shows an example of manufacturing a high electron mobility transistor (HEMT) using the epitaxial substrate 1. That is, the semiconductor device illustrated in FIG. 5 includes the functional layer 22 having a structure in which a carrier traveling layer 221 and a carrier supply layer 222 that forms a heterojunction with the carrier traveling layer 221 are stacked. A heterojunction surface is formed at the interface between the carrier running layer 221 and the carrier supply layer 222 made of nitride semiconductors having different band gap energies, and the carrier running layer 221 near the heterojunction surface has a two-dimensional current path (channel). A carrier gas layer 223 is formed.
- HEMT high electron mobility transistor
- the thickness of the semiconductor layer 20 made of a nitride semiconductor is preferably 6 ⁇ m or more, and the thickness of the carrier traveling layer 221 in which a channel is formed. Is preferably 3 ⁇ m or more.
- the carrier traveling layer 221 is made of, for example, non-doped GaN to which impurities are not added by the MOCVD method or the like.
- non-doped means that no impurity is intentionally added.
- the carrier supply layer 222 is formed on the carrier traveling layer 221 by the MOCVD method or the like. Since the carrier supply layer 222 and the carrier traveling layer 221 have different lattice constants, piezoelectric polarization due to lattice distortion occurs. Due to this piezoelectric polarization and the spontaneous polarization of the crystal of the carrier supply layer 222, high-density carriers are generated in the carrier traveling layer 221 near the heterojunction, and a two-dimensional carrier gas layer 223 is formed.
- the source electrode 31, the drain electrode 32, and the gate electrode 33 are disposed on the functional layer 22.
- the source electrode 31 and the drain electrode 32 are formed of a metal capable of low resistance contact (ohmic contact) with the functional layer 22.
- a metal capable of low resistance contact aluminum (Al), titanium (Ti), or the like can be used for the source electrode 31 and the drain electrode 32.
- the source electrode 31 and the drain electrode 32 are formed as a laminate of Ti and Al.
- nickel gold (NiAu) or the like can be employed for example.
- the semiconductor device using the epitaxial substrate 1 is the HEMT has been shown, but other structures such as an insulated gate field effect transistor (MISFET) and a vertical field effect transistor (FET) using the epitaxial substrate 1 are shown.
- the transistor may be formed.
- the structure shown in FIG. 6 can be adopted. That is, as in the case of the HEMT, the functional layer 22 is configured by the carrier traveling layer 221 made of, for example, a GaN film and the carrier supply layer 222 made of an AlGaN film. Then, the anode electrode 41 and the cathode electrode 42 are arranged apart from each other on the functional layer 22. A Schottky junction is formed between the anode electrode 41 and the functional layer 22, and an ohmic junction is formed between the cathode electrode 42 and the functional layer 22. In the SBD shown in FIG. 6, a current flows between the anode electrode 41 and the cathode electrode 42 via the two-dimensional carrier gas layer 223.
- SBD Schottky barrier diode
- the n-type cladding layer 225 is, for example, a GaN film doped with n-type impurities. As shown in FIG. 7, an n-side electrode 51 is connected to the n-type cladding layer 225, and electrons are supplied to the n-side electrode 51 from a negative power source outside the light emitting device. As a result, electrons are supplied from the n-type cladding layer 225 to the active layer 226.
- the active layer 226 is, for example, a non-doped InGaN film or a nitride semiconductor film doped with p-type or n-type conductivity impurities. Electrons supplied from the n-type cladding layer 225 and holes supplied from the p-type cladding layer 227 are recombined in the active layer 226 to generate light. Note that the active layer 226 may employ a multiple quantum well (MQW) structure in which barrier layers and well layers having a smaller band gap than the barrier layers are alternately arranged.
- MQW multiple quantum well
- This MQW structure includes, for example, a nitride semiconductor layer made of Al x1 Ga 1-x1-y1 In y1 N (0.5 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1 + y1 ⁇ 1), and Al x2 Ga 1.
- -x2-y2 is an in y2 N multilayer structure of (0.01 ⁇ x2 ⁇ 0.5,0 ⁇ y2 ⁇ 1,0 ⁇ x2 + y2 ⁇ 1) formed of a nitride semiconductor layer.
- the semiconductor layer 20 is a stacked body of the buffer layer 21 and the functional layer 22 has been shown.
- the semiconductor layer 20 may have a structure without the buffer layer 21.
- a known cap layer or spacer layer may be provided on the functional layer 22.
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Abstract
Description
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
Claims (7)
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板と、
前記シリコン基板上に配置された、前記シリコン基板と異なる熱膨張係数を有する材料からなる半導体層と
を備えることを特徴とするエピタキシャル基板。 - 前記半導体層が、窒化物半導体膜の積層体からなることを特徴とする請求項1に記載のエピタキシャル基板。
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板と、
前記シリコン基板上に配置された、前記シリコン基板と異なる熱膨張係数を有する材料からなる半導体層と、
前記半導体層と電気的に接続された電極と
を備えることを特徴とする半導体装置。 - 前記半導体層が、窒化物半導体膜の積層体からなることを特徴とする請求項3に記載の半導体装置。
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板を準備するステップと、
前記シリコン基板を加熱しながら、エピタキシャル成長法によって前記シリコン基板上に前記シリコン基板とは異なる熱膨張係数を有する材料からなる半導体層を形成するステップと、
前記半導体層と電気的に接続するように電極を形成するステップと
を含むことを特徴とする半導体装置の製造方法。 - 前記半導体層として窒化物半導体膜の積層体を形成することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体層を形成するステップにおいて、前記シリコン基板を900℃以上に加熱することを特徴とする請求項5又は6に記載の半導体装置の製造方法。
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US14/397,779 US20150084163A1 (en) | 2012-05-11 | 2013-04-19 | Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device |
CN201380024651.8A CN104303268A (zh) | 2012-05-11 | 2013-04-19 | 外延基板、半导体装置及半导体装置的制造方法 |
KR1020147031210A KR20150009965A (ko) | 2012-05-11 | 2013-04-19 | 에피택셜 기판, 반도체 장치 및 반도체 장치의 제조방법 |
DE201311002033 DE112013002033T5 (de) | 2012-05-11 | 2013-04-19 | Epitaxialsubstrat, Halbleitervorrichtung, und Verfahren zum Herstellen einer Halbleitervorrichtung |
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JP2012109637A JP2013239474A (ja) | 2012-05-11 | 2012-05-11 | エピタキシャル基板、半導体装置及び半導体装置の製造方法 |
JP2012-109637 | 2012-05-11 |
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JP (1) | JP2013239474A (ja) |
KR (1) | KR20150009965A (ja) |
CN (1) | CN104303268A (ja) |
DE (1) | DE112013002033T5 (ja) |
TW (1) | TW201401338A (ja) |
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JP6311480B2 (ja) | 2014-06-24 | 2018-04-18 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
KR102256628B1 (ko) * | 2014-08-26 | 2021-05-26 | 엘지이노텍 주식회사 | 반도체 소자 |
JP2017216257A (ja) * | 2014-10-14 | 2017-12-07 | シャープ株式会社 | 窒化物半導体およびそれを用いた電子デバイス |
US20180149771A1 (en) * | 2015-04-28 | 2018-05-31 | Carlit Holdings Co., Ltd. | Optical member formed from silicon material and optical device comprising same |
US9704705B2 (en) * | 2015-09-08 | 2017-07-11 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via reaction with active species |
TWI589023B (zh) * | 2016-06-27 | 2017-06-21 | 國立暨南國際大學 | 半導體裝置用基材及使用其之半導體裝置 |
JP6863423B2 (ja) * | 2019-08-06 | 2021-04-21 | 信越半導体株式会社 | 電子デバイス用基板およびその製造方法 |
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- 2013-04-19 US US14/397,779 patent/US20150084163A1/en not_active Abandoned
- 2013-04-19 CN CN201380024651.8A patent/CN104303268A/zh active Pending
- 2013-04-19 KR KR1020147031210A patent/KR20150009965A/ko not_active Application Discontinuation
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CN104303268A (zh) | 2015-01-21 |
JP2013239474A (ja) | 2013-11-28 |
US20150084163A1 (en) | 2015-03-26 |
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